Anode for battery and battery

Abstract

Provided is an anode for a battery, the anode comprising: an anode current collector layer; an anode layer; and a plurality of nanowire structures disposed on the anode layer, the plurality of nanowire structures comprising silicon, where the plurality of nanowire structures are configured to be laterally and vertically surrounded by an electrolyte of the cell. The invention also provides a battery comprising the anode.

Description

[0001] This application is a divisional application of the invention patent application with an application date of January 22, 2021, an international application number of PCT / EP2021 / 051422, a Chinese application number of 202180010054.4 after entering the Chinese national phase, and an invention name of "Solid-state battery layer structure and its production method". Technical Field

[0002] The invention relates to a solid-state battery layer structure and a method for manufacturing the same. Background Art

[0003] Lithium-ion battery technology, with its high charge capacity levels and rechargeability, has evolved the storage of electrical energy and played an important role in enabling mobile electronic devices such as portable computers and phones. Lithium-ion batteries are also important for the renaissance of electric vehicles. However, conventional lithium-ion battery technology has its own set of problems so far. In order to achieve battery improvements, battery device designs with solid electrolytes instead of traditional liquid electrolytes are becoming increasingly popular, basically across the board. Batteries including solid electrolytes are generally referred to as solid-state batteries. Although solid electrolytes may be very advantageous for, for example, reducing the risk of fire in batteries, novel battery designs in terms of morphology and materials are also needed to realize the full potential of improved performance compared to liquid electrolyte batteries. In particular, improving the charge capacity of solid-state batteries (defined as the ratio of storable charge to battery weight) has not been fully addressed in the prior art. In addition, material-related volume expansion is another problem faced by prior art solid-state batteries. Therefore, improvements are needed in the field of technology. Summary of the invention

[0004] It is an object of the present invention to alleviate at least some of the above problems and to provide solid state battery layer structures capable of increasing the charge capacity of the battery and methods of making such structures.

[0005] According to a first aspect of the present invention, there is provided an anode for a battery, the anode comprising:

[0006] an anode current collector layer;

[0007] an anode layer; and

[0008] A plurality of nanowire structures are disposed on the anode layer, the plurality of nanowire structures comprising silicon, wherein the plurality of nanowire structures are configured to be laterally and vertically surrounded by an electrolyte of the battery.

[0009] The term "arranged on..." may refer to layers or structures being arranged on top of each other in a vertical direction of a layer structure or stack. The vertical direction may be substantially perpendicular to and orthogonal to the surface of a layer or structure in a layer structure. The word "comprising" throughout this disclosure may refer to layers and structures at least partially comprising a certain material. The word does not exclude that a layer or structure contains impurities of other materials, nor does it exclude that a layer or structure consists essentially of the included material.

[0010] This structure can alleviate some of the problems in the prior art. Silicon anodes may be advantageous for increasing the charge capacity of, for example, lithium-ion-based batteries. This is because silicon atoms (usually alloyed to form composite anode materials) bind lithium atoms better than carbon atoms in conventional graphite anodes and therefore hold a larger number of lithium atoms. Battery charge capacity can be recorded in ampere-hours or coulombs. In addition, the use of silicon anodes can simplify the production of battery layer structures and increase yields because complex technologies and methods commonly used in microelectronics manufacturing can be utilized. In this way, solid-state batteries can be effectively miniaturized. Silicon anodes can be based on single crystal substrates. In this way, solid-state battery layer structures can be formed more integrally with silicon-based microelectronic devices. Therefore, electronic circuits and devices with integrated solid-state batteries can be enabled and miniaturized.

[0011] The anode layer may include gallium nitride.

[0012] The use of gallium nitride in the anode layer, for example as a thin upper layer of an anode layer that otherwise consists primarily of silicon, can alleviate the problems of the prior art. The charge capacity of a solid-state battery with a gallium nitride anode material can be about 2.5 times the charge capacity of a solid-state battery with a conventional graphite anode. The diffusion barrier for lithium ion diffusion of a gallium nitride anode can also be lower than the same barrier for a graphite anode. This can be advantageous for fast battery charging.

[0013] The solid-state battery layer structure may further include a plurality of nanowire structures, wherein the nanowire structures are arranged on the anode layer, and wherein the nanowire structures are laterally and vertically surrounded by the solid electrolyte layer.

[0014] The term "nanowire structure" (also simply referred to as nanostructure) may refer to an elongated structure having a dimension such as diameter or length on the nanometer scale (i.e., 1 nm to 100 nm). A nanowire structure may be simple and substantially one-dimensional, or may include at least one node along its length from which at least two separate branches extend. Such a nanowire structure may be referred to as a nanotree or nanowire tree structure.

[0015] The term "laterally and vertically surrounding" may mean surrounding the nanowire structure laterally or radially and vertically or longitudinally. The entire nanowire structure (including all eventual branches, faces and surfaces) may be covered by a solid electrolyte material forming a solid electrolyte layer.

[0016] The addition of such nanowire structures can advantageously increase the effective interface area between the anode and the solid electrolyte, and thus also increase the battery charge capacity, and may also increase the rate at which the charge carrying ions (e.g., lithium ions) can be alloyed with the anode material. In addition, the use of nanowire structures can alleviate the volume expansion of some materials during battery operation. For example, the bulk silicon anode may expand by 300% to 400% during lithiation (i.e., the process of charging the battery when the charge carrier is a lithium ion). Nanostructures such as nanowires are advantageous because their volume expansion may be much less severe than that of the bulk material. This advantage of nanostructures may be attributed to the fact that the volume expansion of the nanostructure is more localized and more dispersed than when the bulk layer expands as a single piece. This alleviation of the volume expansion problem may be more relevant to solid electrolyte batteries because solids generally allow less mechanical movement than liquids. In addition, nanostructures (such as these nanostructures) can be produced in a structured and well-defined manner, and even if irregularities occur in some way, the effective interface area can still be increased.

[0017] Each of the plurality of nanowire structures may include a vertical trunk and a plurality of branches extending from the vertical trunk, wherein the vertical trunks of the plurality of nanowire structures are arranged perpendicular to a top surface of the anode layer.

[0018] The term "vertical arrangement" may refer to arranging the entire nanowire structure, and in particular the vertical trunk, so that they extend in a direction substantially perpendicular and orthogonal to the top surface of the anode layer. This direction may alternatively be understood as corresponding to the vertical direction of the layer structure. The inclusion of a tree-shaped nanowire structure (a tree-shaped nanowire structure includes both a trunk and branches) may further increase the effective interface area between the anode and the solid electrolyte and the battery charge capacity. In addition, the tree-shaped nanowire structure may further alleviate the above-mentioned volume expansion problem.

[0019] The plurality of tree-shaped nanowire structures or nanotrees can be visually compared or contrasted to a nanoforest.

[0020] The plurality of nanowire structures may include silicon.

[0021] Such nanowire structures may be advantageous for being relatively easy to form due to the many available silicon formation and processing methods.Since the silicon nanowire structure will effectively extend the anode, the same advantages of using silicon as the anode material apply, namely that charge capacity may be increased.

[0022] The plurality of nanowire structures may include gallium nitride.

[0023] Similar to the above, the gallium nitride nanowire structure that extends the anode can also improve the charge capacity of solid-state batteries.

[0024] The anode layer may include a plurality of metal vias connecting the plurality of nanowire structures with the anode current collector metal layer.

[0025] In this way, a lower resistance or more ohmic conduction path may be provided to the base of the nanowire structure.

[0026] The solid electrolyte layer may include lithium phosphate.

[0027] Lithium phosphate or compounds including lithium phosphate may be considered as favorable materials for solid electrolyte layers in solid-state battery layer structures. Lithium phosphate may allow lithium ions to be transported between the anode and cathode of a solid-state battery by solid-state diffusion through atomic vacancies in the solid electrolyte material lattice.

[0028] The cathode layer may include lithium cobalt oxide or another metal oxide.

[0029] Lithium cobalt oxide may be considered as a favorable material for the cathode layer.

[0030] The cathode current collector metal layer may include aluminum.

[0031] Aluminum can provide a low resistance or sufficiently ohmic conduction path for the cathode layer.

[0032] The anode current collector metal layer may include copper.

[0033] Copper can provide a low resistance or sufficiently ohmic conduction path for the anode layer (and, if present, the nanowire structure as well).

[0034] According to a second aspect of the present invention, there is provided a battery, comprising:

[0035] The anode according to the first aspect of the present invention;

[0036] an electrolyte laterally and vertically surrounding the plurality of nanowire structures of the anode; and

[0037] cathode.

[0038] The word "formed" may refer to any method or technique for forming a layer or structure. The word "deposited" may refer to the use of any method or technique for forming a layer or structure by adding material. Examples of deposition techniques may include chemical vapor deposition (CVD), physical vapor deposition (PVD), metal organic vapor phase epitaxy (MOVPE), sputtering, evaporation, etc. Therefore, the step of forming may refer to deposition. The anode collector metal layer is understood to be deposited on the bottom surface of the anode layer, i.e. not on or above the anode layer when considering the vertical direction of the layer structure or stack.

[0039] This method can be used to produce a solid-state battery layer structure according to the first aspect. Therefore, the advantages can closely correspond to the advantages described for the first aspect. In summary, the method can produce a solid-state battery layer structure in a relatively low-complexity manner by using existing microelectronics manufacturing methods and technologies. The method can achieve close integration and miniaturization with electronic devices.

[0040] The method may further include etching a hole through the anode layer from a bottom surface of the anode layer, wherein the step of depositing an anode current collector metal layer on the bottom surface of the anode layer further includes filling the hole with the same material as the anode current collector metal layer.

[0041] The addition of such etching and filling may be understood to correspond to forming vias to the base of the nanowire structure as described in the first aspect. Thus, similar advantages and benefits apply. Such backside wafer vias may be provided by plasma etching of silicon oxide or silicon nitride as a hard mask for deep reactive ion etching (DRIE) of silicon.

[0042] The method may further include aligning holes through the anode layer with the plurality of nanowire structures.

[0043] In this way, a more ideal conduction path between the anode contact and the nanowire structure can be obtained.

[0044] The step of forming the plurality of nanowire structures may include:

[0045] forming a plurality of trunk seed particles on a top surface of the anode layer;

[0046] epitaxially growing the plurality of vertical trunks of nanowire structures from the plurality of trunk seed particles;

[0047] depositing branch seed particles on the vertical trunk; and

[0048] Branches of the plurality of nanowire structures are epitaxially grown from the branch seed particles.

[0049] Forming a nanowire structure by particle formation (e.g., deposition) and subsequent particle-mediated epitaxy can be an effective way to form a tree-shaped nanowire structure, which includes a first-level nanowire structure (i.e., a vertical trunk) and a second-level nanowire structure (i.e., branches), wherein the first-level nanowire structure serves as the base of the second-level nanowire structure.

[0050] Branches may be understood to grow substantially radially outwards from a vertical trunk. Branch seed particles may be understood to be deposited on radial or lateral surfaces of the vertical trunk and along the entire length.

[0051] According to the detailed description given below, the further applicable scope of the present invention will become clear. However, it should be understood that the detailed description and specific examples, although indicating the preferred embodiments of the present invention, are only given in an illustrative manner, because according to this detailed description, various changes and modifications within the scope of the present invention will become clear to those skilled in the art.

[0052] Therefore, it is to be understood that the invention is not limited to the specific components of the devices described or acts of the methods described, as such devices and methods may vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting.

[0053] It must be noted that, as used in this specification and the appended claims, the articles "a", "an", "the", and "said" are intended to mean that there are one or more elements, unless the context clearly dictates otherwise. Thus, for example, reference to "a unit" or "the unit" may include several devices, etc. Furthermore, the words "comprising", "including", "containing" and similar terms do not exclude other elements or steps. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] The above and other aspects of the present invention will be described in more detail below with reference to the accompanying drawings. These drawings should not be considered limiting; rather, they should be considered for the purpose of explanation and understanding.

[0055] As shown in the drawings, the sizes of layers and regions may be exaggerated for illustrative purposes and are therefore provided to illustrate the overall structure. Throughout, like reference numerals refer to like elements.

[0056] Figure 1 A cross section of a solid-state battery layer structure is shown.

[0057] Figure 2 A cross section of a solid-state battery layer structure including a nanowire structure is shown.

[0058] Figure 3 A cross section of a solid-state battery layer structure including nanowire structures and vias is shown.

[0059] Figure 4 A flow chart showing the steps for forming a solid-state battery layer structure.

[0060] Figure 5a to Figure 5h A cross section of a solid-state battery layer structure is shown at various stages of its production.

[0061] Figure 6 A flow chart with steps for forming a nanowire structure is shown.

[0062] Figures 7a to 7d Shown are cross sections of a nanowire structure at different stages of its formation. DETAILED DESCRIPTION

[0063] The present invention will now be described more fully below with reference to the accompanying drawings, in which currently preferred embodiments of the present invention are shown. However, the present invention may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to achieve thoroughness and completeness, and to fully convey the scope of the present invention to the skilled person.

[0064] Figure 1 A cross-sectional view of a solid-state battery layer structure 100 is shown. The solid-state battery layer structure comprises:

[0065] Anode current collector metal layer 110;

[0066] an anode layer 120 disposed on the anode current collector metal layer;

[0067] A solid electrolyte layer 140 disposed laterally on the anode layer;

[0068] a cathode layer 150 disposed on the solid electrolyte layer; and

[0069] Cathode current collector metal layer 160,

[0070] Wherein, the anode layer comprises silicon.

[0071] The anode current collector metal layer 110 may include copper or consist essentially of copper. The anode current collector metal layer 110 may alternatively or additionally include one of the following other metal materials: gold, silver, platinum, nickel, titanium, zinc, chromium, tin, lead, manganese, cobalt, and iron. The anode current collector metal layer 110 may include an alloy material.

[0072] The anode layer 120 may include <111> Silicon. Anode layer 120 may be a crystalline silicon substrate or wafer. Anode layer 120 may include or consist essentially of gallium nitride. Anode layer 120 may include a thin upper gallium nitride sublayer disposed on a lower silicon sublayer. Anode layer 120 including GaN may be passivated with hydrogen. Lithium may be incorporated or alloyed into anode layer 120.

[0073] Solid electrolyte layer 140 may include or consist essentially of lithium phosphate (Li3PO4).Solid electrolyte layer 140 may additionally or alternatively include or consist essentially of other materials such as lithium iron phosphate (Li3FePO4) or lithium phosphorus oxynitride (LiPON).

[0074] Other lithium compounds may also be used in the solid electrolyte layer 140 .

[0075] Solid electrolyte layer 140 may have atomic vacancies at lithium atom lattice sites to allow conduction by diffusion of lithium ions through solid electrolyte layer 140. Solid electrolyte layer 140 may include magnesium substitutional or impurity atoms to restore charge balance in the lattice that may be lost due to the introduction of lattice lithium vacancies.

[0076] The solid electrolyte layer 140 may have a thickness in the range of 500 nm to 5000 nm.

[0077] Cathode layer 150 may include or consist essentially of lithium cobalt oxide (LiCoO2). Cathode layer 150 may alternatively or additionally include other metal oxide-based materials.

[0078] The cathode current collector metal layer 160 may include aluminum or consist essentially of aluminum. The cathode current collector metal layer 160 may alternatively or additionally include one of the following other metal materials: gold, silver, platinum, nickel, titanium, zinc, chromium, tin, lead, manganese, cobalt, and iron. The cathode current collector metal layer 160 may include an alloy material.

[0079] Figure 2 The solid-state battery layer structure 100 is shown further comprising a plurality of nanowire structures 130. The nanowire structures 130 may be arranged on the anode layer 120. The nanowire structures 130 may be surrounded by the solid electrolyte layer 140 laterally and vertically.

[0080] Each of the plurality of nanowire structures 130 may include a vertical trunk 132 and a plurality of branches 134 extending from the vertical trunk 132. The vertical trunks of the plurality of nanowire structures may be arranged perpendicular to the top surface 122 of the anode layer 120.

[0081] The nanowire structure 130 may be arranged in a hexagonal pattern on the top surface 122 of the anode layer 120. The vertical trunks 132 of the nanowire structure 130 may be arranged with a spacing in the range of 100 nm to 1000 nm from the nearest other vertical trunk 132. More preferably, the spacing is in the range of 250 nm to 750 nm. Most preferably, the spacing is in the range of 400 nm to 600 nm.

[0082] The nanowire structures 130 may alternatively be arranged on the anode layer 120 in a manner such that each individual nanowire structure 130 has a random orientation. Such formation may be less complex while still increasing the effective anode-electrolyte interface area.

[0083] The vertical stem 132 may have a length in the range of 500 nm to 5000 nm. More preferably, the length is in the range of 1000 nm to 3000 nm. Most preferably, the length is in the range of 1500 nm to 2500 nm.

[0084] The branches 134 may have a length in the range of 50 nm to 500 nm. More preferably, the length is in the range of 50 nm to 250 nm. Most preferably, the length is in the range of 50 nm to 150 nm.

[0085] The plurality of nanowire structures may include or consist essentially of silicon. The nanowire structure 130 may include a lattice direction <111> Crystalline silicon corresponding to the vertical direction of the nanowire structure.

[0086] The plurality of nanowire structures may include or consist essentially of gallium nitride. The nanowire structure 130 may include a lattice direction <0001> The gallium nitride nanowire structure 130 may have a hydrogen passivation layer on the surface and face of the nanowire structure 130 to saturate the unsaturated dangling bonds at the surface of the gallium nitride.

[0087] The nanowire structure 130 may incorporate or alloy Li into the surface or bulk lattice of the nanowire structure.

[0088] Figure 3 Anode layer 120 is shown including a plurality of metal vias 224 connecting the plurality of nanowire structures 130 with anode current collector metal layer 110. Metal vias 224 may comprise or consist essentially of the same material present in anode current collector metal layer 110.

[0089] Figure 4 A flow chart is shown of a method for producing a solid-state battery layer structure 100. The method is shown to include the following steps:

[0090] Providing S1002 an anode layer 120;

[0091] forming S1004 a plurality of nanowire structures 130 on the anode layer 120 , each nanowire structure 130 comprising a vertical trunk 132 and a plurality of branches 134 extending from the vertical trunk 132 , wherein the vertical trunk 132 of the nanowire structure 130 is formed perpendicular to the top surface 122 of the anode layer 120 ;

[0092] Depositing S1006 a solid electrolyte layer 140 on the anode layer 120 , the solid electrolyte layer 140 laterally and vertically surrounding the plurality of nanowire structures 130 ;

[0093] Depositing S1008 a cathode layer 150 on the solid electrolyte layer 140;

[0094] depositing S1010 a cathode current collector metal layer 160 on the cathode layer 140; and

[0095] An anode current collector metal layer 110 is deposited S1012 on the bottom surface 326 of the anode layer 120 .

[0096] The plurality of nanowire structures 130 may be formed by MOVPE or CVD processes. The process may be seed particle mediated. The pattern in which the nanowire structures 130 are arranged may be formed using photolithography techniques such as ultraviolet lithography (UVL), electron beam lithography (EBL) and nanoimprint lithography (NIL). Pattern transfer may be achieved by etching methods.

[0097] Nanosphere lithography (NSL) can be used with chlorine-based plasma etching to etch out the entire vertical backbone 132. In this way, the need for MOVPE can be avoided, at least for the formation of the vertical backbone 132. The nanowire structure 130 can be passivated in situ before, during or after the MOVPE process. The nanowire structure 130 can be passivated with hydrogen.

[0098] The method may further include incorporating or alloying lithium into the surface or bulk lattice of the nanowire structure 130. This may be achieved by electrochemical treatment. Lithium may be deposited onto the nanowire structure 130 prior to the deposition of the solid electrolyte layer 140 S1006. Lithium may be deposited by thermal evaporation.

[0099] The solid electrolyte layer 140 may be deposited S1006 by a CVD process. The solid electrolyte layer 140 may be deposited by a PVD or sputtering process. The sputtering process may be a pulsed DC (direct current) or RF (radio frequency) based sputtering process. The solid electrolyte layer 140 may encapsulate any lithium deposited onto the nanowire structure 130.

[0100] Cathode layer 150 may be deposited S1008 by a CVD process. Cathode current collector metal layer 160 may be deposited S1010 by a PVD process. Anode current collector metal layer 110 may be deposited S1012 by a PVD process.

[0101] Figure 4 It is also shown how the method may further include etching S3002 a hole 328 through the anode layer 120 from the bottom surface 326 of the anode layer 120. In this case, the step of depositing S1012 the anode current collector metal layer 110 on the bottom surface 326 of the anode layer 120 further includes filling the hole 328 with the same material as the anode current collector metal layer 110. The filled hole 328 may correspond to Figure 3 The via 224 in the.

[0102] Also like Figure 4 As shown, the method may further include aligning the holes 328 passing through the anode layer 120 with the plurality of nanowire structures 130 S4002 , ie, making each hole 328 correspond to a position of the nanowire structure 130 .

[0103] The holes 328 may be etched S3002 by a reactive ion etching (RIE) process. The RIE process may be a dry RIE process.

[0104] Figure 5a to Figure 5h Cross-sectional views of the layers and structures of the solid-state battery layer structure 100 during various stages of its production are shown.

[0105] Figure 5a It is shown that the anode layer 120 has been provided S1002, the anode layer 120 being the basis for subsequent processing steps.

[0106] Figure 5b A plurality of nanowire structures 130 are shown to have been formed S1004 , each of the plurality of nanowire structures comprising a vertical trunk 132 and branches 134 , wherein the vertical trunk 132 of the nanowire structure 130 is formed perpendicular to the top surface 122 of the anode layer 120 .

[0107] Figure 5c It is shown that the solid electrolyte layer 140 has been deposited S1006 on the anode layer 120 so as to surround the plurality of nanowire structures 130 laterally and vertically.

[0108] Figure 5d A cathode layer 150 is shown having been deposited S1008 on the solid electrolyte layer 140 .

[0109] Figure 5eA cathode current collector metal layer 160 is shown having been deposited S1010 on the cathode layer 150. The cell layer structure may be flipped after step S1010 to accommodate subsequent processing steps.

[0110] Figure 5f An anode current collector metal layer 110 is shown having been deposited S1012 on the bottom surface 326 of the anode layer 120 , thereby completing the solid-state battery layer structure 100 .

[0111] Figure 5g to Figure 5h Shown with Figure 5f The approach shown in FIG. 1 is an alternative approach to completing the layer structure 100 .

[0112] Figure 5g A hole 328 is shown having been etched S3002 through the anode layer from the bottom, from the bottom surface 326 of the anode layer 120. The hole 328 is also shown to have been aligned S4002 with the nanowire structure 130.

[0113] Figure 5h The anode current collector metal layer 110 is shown having been deposited S1012 on the bottom surface 326 of the anode layer 120 and into the holes 328 through the anode layer 120 , thereby completing the solid state battery layer structure 100 .

[0114] Figure 6 A flowchart showing the steps of forming the plurality of nanowire structures 130 in step S1004 is shown. Step S1004 may include:

[0115] forming S2002 a plurality of trunk seed particles 436 on the top surface 122 of the anode layer 120;

[0116] epitaxially grow S2004 the plurality of vertical trunks 132 of the nanowire structures 130 from the plurality of trunk seed particles 436 ;

[0117] Depositing S2006 branching seed particles 438 on vertical stems 132; and

[0118] The branches 134 of the plurality of nanowire structures 130 are epitaxially grown S2008 from the branch seed particles 438 .

[0119] The trunk seed particles 436 and the branch seed particles 438 can be, for example, gold seed particles. The trunk seed particles 436 and the branch seed particles 438 can include other materials besides gold, such as silver, palladium, cobalt, bismuth and platinum. Aerosol deposition can be used to deposit the trunk seed particles 436 and the branch seed particles 438. The deposition or formation of multiple seed particles 436, 438 can be formed on the corresponding surface or structure with or without preferred co-alignment. The trunk seed particles 436 can be formed using a patterning technique based on lithography. Such a technique can include forming a gold layer onto the anode layer 120 by electroplating, evaporation or sputtering, followed by patterning based on lithography, such as by resist coating, exposure and etching steps, to achieve a well-defined pattern of the remaining trunk seed particles 436 on the top surface 122 of the anode layer 120.

[0120] Seed particle mediated epitaxy may be used to grow the nanowire structure 130. Essentially, this may mean that the crystalline nanowire structure 130 is epitaxially grown from the seed particles 436, 438. The seed particles 436, 438 may first absorb a precursor gas.

[0121] Figures 7a to 7d A cross-sectional or side view of a nanowire structure 130 is shown during different stages of its formation.

[0122] Figure 7a A plurality of trunk seed particles 436 are shown having been formed S2002 on the top surface 122 of the anode layer 120 .

[0123] Figure 7b A vertical stem 132 is shown which has been epitaxially grown S2004.

[0124] Figure 7c Branching seed particles 438 are shown having been deposited S2006 on the vertical stems 132 .

[0125] Figure 7d Branches 134 are shown having been epitaxially grown S2008.

[0126] This application may include the following solutions:

[0127] 1. A solid-state battery layer structure (100), comprising:

[0128] Anode current collector metal layer (110);

[0129] an anode layer (120) disposed on the anode current collector metal layer;

[0130] a solid electrolyte layer (140) disposed laterally on the anode layer;

[0131] a cathode layer (150) disposed on the solid electrolyte layer; and

[0132] a cathode current collector metal layer (160); and

[0133] A plurality of nanowire structures (130) comprising silicon and / or gallium nitride, wherein the nanowire structures (130) are arranged on the anode layer (120), and wherein the nanowire structures (130) are laterally and vertically surrounded by the solid electrolyte layer (140),

[0134] The anode layer includes silicon and a plurality of metal vias (224) connecting the plurality of nanowire structures with the anode current collector metal layer (110).

[0135] 2. A solid-state battery layer structure according to Option 1, wherein the anode layer comprises gallium nitride.

[0136] 3. A solid-state battery layer structure according to Option 1 or 2, wherein each of the multiple nanowire structures includes a vertical trunk (132) and multiple branches (134) extending from the vertical trunk, wherein the vertical trunks of the multiple nanowire structures are arranged perpendicular to the top surface (122) of the anode layer.

[0137] 4. A solid-state battery layer structure according to any one of schemes 1 to 3, wherein the solid electrolyte layer comprises lithium phosphate.

[0138] 5. A solid-state battery layer structure according to any one of schemes 1 to 4, wherein the cathode layer comprises lithium cobalt oxide or another metal oxide.

[0139] 6. A solid-state battery layer structure according to any one of Schemes 1 to 5, wherein the cathode current collector metal layer comprises aluminum.

[0140] 7. A solid-state battery layer structure according to any one of Schemes 1 to 6, wherein the anode current collector metal layer comprises copper.

[0141] 8. A method for producing a solid-state battery layer structure (100), the method comprising:

[0142] Providing (S1002) an anode layer (120) including silicon;

[0143] Forming (S1004) a plurality of nanowire structures (130) comprising silicon and / or gallium nitride on the anode layer, wherein the nanowire structures (130) are formed perpendicular to the top surface (122) of the anode layer;

[0144] depositing (S1006) a solid electrolyte layer (140) on the anode layer, the solid electrolyte layer laterally and vertically surrounding the plurality of nanowire structures;

[0145] Depositing (S1008) a cathode layer (150) on the solid electrolyte layer;

[0146] Depositing (S1010) a cathode current collector metal layer (160) on the cathode layer;

[0147] etching (S3002) a hole (328) through the anode layer (120) from a bottom surface (326) of the anode layer; and

[0148] An anode current collector metal layer (110) is deposited (S1012) on the bottom surface (326) of the anode layer, and the holes are filled with the same material as that of the anode current collector metal layer.

[0149] 9. The method according to Option 8 further comprises aligning the holes passing through the anode layer with the plurality of nanowire structures (S4002).

[0150] 10. The method according to solution 8 or 9, wherein the step of forming the plurality of nanowire structures comprises:

[0151] forming (S2002) a plurality of trunk seed particles (436) on a top surface of the anode layer;

[0152] epitaxially growing ( S2004 ) the plurality of vertical trunks of the nanowire structures from the plurality of trunk seed particles;

[0153] Depositing (S2006) branch seed particles (438) on the vertical trunks; and

[0154] The branches of the plurality of nanowire structures are epitaxially grown ( S2008 ) from the branch seed particles.

[0155] Additionally, variations to the disclosed embodiments can be understood and effected by the skilled artisan in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims.

Claims

1. An anode for a battery, the anode comprising: an anode current collector layer; Anode layer; as well as A plurality of nanowire structures are disposed on the anode layer, the plurality of nanowire structures comprising silicon, wherein the plurality of nanowire structures are configured to be laterally and vertically surrounded by an electrolyte of the battery.

2. The anode according to claim 1, wherein The anode layer includes silicon.

3. The anode according to claim 2, wherein The anode layer includes crystalline silicon.

4. The anode according to claim 2, wherein The anode layer includes a lower silicon sublayer and an upper gallium nitride sublayer.

5. The anode according to claim 4, wherein The anode layer is passivated with hydrogen.

6. The anode according to any one of claims 1 to 5, wherein Lithium is incorporated or alloyed into the anode layer.

7. The anode according to claim 1, wherein The anode layer includes a plurality of vias, wherein each via is directly connected to a corresponding nanowire structure of the plurality of nanowire structures, the plurality of vias connecting the plurality of nanowire structures with the anode current collector layer.

8. The anode according to claim 1, wherein Each of the plurality of nanowire structures includes a vertical trunk and a plurality of branches extending from the vertical trunk, wherein the vertical trunks of the plurality of nanowire structures are arranged perpendicular to a top surface of the anode layer.

9. The anode according to claim 1, wherein The plurality of nanowire structures are arranged in a hexagonal pattern on a top surface of the anode layer.

10. The anode according to claim 8, wherein The vertical trunks of the plurality of nanowire structures are arranged with a spacing from another vertical trunk closest thereto in a range of 100 nm to 1000 nm.

11. The anode according to claim 8, wherein The vertical trunks of the plurality of nanowire structures are arranged with a spacing from another vertical trunk closest thereto in a range of 250 nm to 750 nm.

12. The anode according to claim 8, wherein The vertical trunks of the plurality of nanowire structures are arranged with a spacing from another vertical trunk closest thereto in a range of 400 nm to 600 nm.

13. The anode according to claim 1, wherein The plurality of nanowire structures are arranged on the anode layer in such a manner that each individual nanowire structure has a random orientation.

14. A battery comprising: The anode according to claim 1; an electrolyte laterally and vertically surrounding the plurality of nanowire structures of the anode; as well as cathode.

15. The battery according to claim 14, wherein The cathode comprises: a cathode layer comprising lithium cobalt oxide or another metal oxide, and Cathode current collector layer.

16. The battery according to claim 14, wherein The electrolyte is a solid electrolyte layer and includes lithium phosphate.

17. The battery according to claim 14, wherein: The cathode current collector layer includes one or more of aluminum, gold, silver, platinum, nickel, titanium, zinc, chromium, tin, lead, manganese, cobalt and iron, or an alloy thereof.

18. The battery according to claim 14, wherein The anode current collector layer includes one or more of copper, gold, silver, platinum, nickel, titanium, zinc, chromium, tin, lead, manganese, cobalt and iron, or an alloy thereof.

19. The battery according to claim 14, wherein The anode layer includes a lower silicon sublayer and an upper gallium nitride sublayer.

20. The battery according to claim 14, wherein Lithium is incorporated or alloyed into the anode layer.

Images