Chip-integrated multi-beam antenna array

Abstract

The invention relates to the technical field of signal transmission, in particular to a chip integrated multi-beam antenna array, which comprises a Butler matrix feed network and antenna array elements, the Butler matrix feed network adopts a three-layer structure of a substrate integrated waveguide, and comprises a bottom layer metal, a middle layer medium and a top layer metal from bottom to top; the middle-layer medium comprises a plurality of metal walls, and the bottom-layer metal, the top-layer metal and the metal walls are encircled to form a closed waveguide structure; and the Butler matrix feed network is used for performing phase shift and power division processing on feed of the input ports, and the output ports form different amplitude-phase distributions among the antenna array elements, so that wave beams with different angle directions are generated. The Butler matrix is realized on the chip substrate, and the antenna array is integrated on the chip substrate, so that the antenna array has the characteristics of low profile, small area and co-integration with a transceiving link, and the antenna array has beam scanning capability in terahertz communication.

Description

Technical Field

[0001] The present invention relates to the technical field of signal transmission, and in particular to a chip-integrated multi-beam antenna array. Background Art

[0002] As an advanced wireless transmission technology for 6G, terahertz can provide advantages such as greater bandwidth and higher transmission rate. However, existing terahertz wireless transmission technologies often use high-gain antennas with extremely narrow beam widths. The disadvantages of such antennas are large size, fixed beams, and the inability to achieve beam scanning functions.

[0003] In order to achieve beam scanning with the composite radiation pattern of multiple antennas, a beamforming network is usually required. The beamforming network forms a regular amplitude and phase distribution between different antenna units by performing phase shifting and power division inside it to achieve the purpose of beamforming. For analog beamforming networks, feeding from different input ports can form different amplitude and phase distributions between antenna units, thereby generating beams pointing at different angles. Beam scanning antennas greatly enhance the capabilities of radar and communication systems by providing useful spatial diversity characteristics. In the microwave and millimeter wave frequency bands, beam scanning antennas are often implemented in a phased array manner. However, there are no low-loss, mature phase shifters in the terahertz band for the implementation of phased array antennas.

[0004] The above contents are only used to assist in understanding the technical solution of the present invention and do not constitute an admission that the above contents are prior art. Summary of the invention

[0005] The main purpose of the present invention is to provide a chip-integrated multi-beam antenna array, aiming to solve the technical problem in the prior art that it is difficult to realize an antenna with a beam scanning function in the terahertz frequency band.

[0006] To achieve the above object, the present invention proposes a chip-integrated multi-beam antenna array, wherein the chip-integrated multi-beam antenna array comprises: a Butler matrix feeding network and antenna array elements;

[0007] The Butler matrix feeding network adopts a three-layer structure of substrate integrated waveguide, which includes from bottom to top: bottom metal, middle dielectric layer and top metal layer;

[0008] The intermediate layer medium includes a plurality of metal walls, and the bottom metal, the top metal and the metal walls together form a closed waveguide structure;

[0009] The Butler matrix feeding network is used to perform phase shifting and power division processing on the feeding of the input port, and the output port forms different amplitude and phase distributions between antenna array elements, thereby generating beams pointing at different angles.

[0010] Optionally, the Butler matrix feeding network comprises: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure and more than one switch;

[0011] The first phase shifter is connected to the input port through one of the bridge structures, the first phase shifter is connected to the second phase shifter through another of the bridge structures and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure;

[0012] The first phase shifter is arranged in parallel with one of the converters, and the second phase shifter is arranged in parallel with another of the converters.

[0013] Optionally, the bridge structure comprises: a first rectangular area whose central area is surrounded by the metal wall, and a distance from a port edge of the bridge structure to the metal wall of the first rectangular area gradually narrows;

[0014] The longitudinal length from the port edge of the bridge structure to the first rectangular area and the length of the metal wall in the first rectangular area are set according to the port transmission parameters of the bridge structure;

[0015] The spacing width of the metal walls in the first rectangular area is set according to the port width of the bridge structure;

[0016] The bridge structure is used to evenly distribute energy to two output ports for output with a phase difference of a first preset angle when power is fed to the input port.

[0017] Optionally, the circuit converter comprises: a second rectangular area whose central area is formed by the metal wall, the distance between the port edge of the circuit converter and the metal wall of the second rectangular area gradually narrows, the first input port and the first output port of the circuit converter are arranged opposite to each other on both sides of the second rectangular area, and the second input port and the second output port are arranged opposite to each other on both sides of the second rectangular area;

[0018] The longitudinal length from the port edge of the converter to the second rectangular area and the length of the metal wall in the second rectangular area are set according to the port transmission parameters of the converter;

[0019] The spacing width of the metal walls in the second rectangular area is set according to the port width of the converter;

[0020] The switch is used to distribute all the energy to the second output port for output when the first input port is powered, and is also used to distribute all the energy to the first output port for output when the second input port is powered.

[0021] Optionally, the first phase shifter comprises: a first gradual transition region which is narrow at the center and wide at the port and is formed by the metal wall;

[0022] The longitudinal length from the input port edge to the output port edge of the first phase shifter is set according to the length of the converter;

[0023] The center position width of the first phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the first phase shifter;

[0024] The first phase shifter is used to generate a phase difference of a second preset angle at the output port compared to the input port when the input port is fed.

[0025] Optionally, the second phase shifter comprises: a second gradual transition region which is narrow at the center and wide at the port and is formed by the metal wall;

[0026] The longitudinal length from the input port edge to the output port edge of the second phase shifter is set according to the length of the switch;

[0027] The center position width of the second phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the second phase shifter;

[0028] The second phase shifter is used to generate a phase difference of a third preset angle at the output port compared with the input port when the input port is fed.

[0029] Optionally, the length of the metal wall in the first connection structure is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated with the chip, and the spacing between the metal walls in the first connection structure is the same.

[0030] Optionally, the length of the metal wall in the second connection structure is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated with the chip, and the spacing between the metal walls in the second connection structure is the same.

[0031] Optionally, the antenna array element comprises: a slot-fed dielectric resonator antenna;

[0032] The dielectric resonator antenna is a rectangular parallelepiped structure and is arranged on the top metal layer;

[0033] The length, width and height of the dielectric resonator antenna are set according to the field distribution mode and the waveguide wavelength.

[0034] Optionally, a rectangular gap is provided on the top metal layer, and the dielectric resonator antenna is provided on the rectangular gap;

[0035] The length and width of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna;

[0036] The distance between the collective center of the rectangular slots and the edge of the top metal layer is set according to the return loss of the antenna.

[0037] The present invention provides a chip-integrated multi-beam antenna array, which includes: a Butler matrix feed network and antenna array elements; the Butler matrix feed network adopts a three-layer structure of a substrate integrated waveguide, which includes from bottom to top: a bottom metal, an intermediate layer medium and a top metal; the intermediate layer medium contains a plurality of metal walls, and the bottom metal, the top metal and each of the metal walls enclose a closed waveguide structure; the Butler matrix feed network is used to perform phase shifting and power division processing on the feed of the input port, and the output port forms different amplitude and phase distributions between the antenna array elements, thereby generating beams pointing at different angles. By realizing the Butler matrix on the chip substrate and integrating the antenna array, it has the characteristics of low profile, small area and co-integration with the transceiver link, so that the antenna array has beam scanning capability in terahertz communication. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0039] Figure 1 A schematic structural diagram of a first embodiment of a chip-integrated multi-beam antenna array according to the present invention;

[0040] Figure 2 An exploded diagram of the structure of a Butler matrix feeding network in the first embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0041] Figure 3 A basic structural diagram of a Butler matrix in the first embodiment of a chip-integrated multi-beam antenna array of the present invention;

[0042] Figure 4 A schematic diagram of the structure of a Butler matrix feeding network in a second embodiment of a chip-integrated multi-beam antenna array of the present invention;

[0043] Figure 5A schematic diagram of the structure of the bridge structure in the second embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0044] Figure 6 A schematic diagram of the structure of a switch in the second embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0045] Figure 7 A schematic diagram of the structure of the first phase shifter in the second embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0046] Figure 8 A schematic diagram of the structure of the second phase shifter in the second embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0047] Fig. 9 It is a structural exploded diagram of the antenna array element in the third embodiment of the chip-integrated multi-beam antenna array of the present invention;

[0048] Fig.10 The three-dimensional radiation pattern of one beam at 220 GHz in the third embodiment of the multi-beam antenna array integrated on the chip of the present invention;

[0049] Fig.11 The two-dimensional radiation pattern of four beams at 220 GHz in the third embodiment of the chip-integrated multi-beam antenna array of the present invention.

[0050] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0051] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0052] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0053] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0054] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0055] Reference Figure 1 , Figure 1 The schematic diagram of the structure of the first embodiment of the chip-integrated multi-beam antenna array of the present invention is as follows: Figure 1 As shown, in this embodiment, the chip-integrated multi-beam antenna array includes: a Butler matrix feeding network and an antenna array element 100 .

[0056] Reference Figure 2 , Figure 2 The exploded diagram of the structure of the Butler matrix feed network in the first embodiment of the chip-integrated multi-beam antenna array of the present invention, the Butler matrix feed network adopts a three-layer structure of substrate integrated waveguide, including from bottom to top: a bottom metal 10, an intermediate layer dielectric 20 and a top metal 30. The intermediate layer dielectric 20 includes a plurality of metal walls 21, and the bottom metal 10, the top metal 30 and the metal walls 21 together form a closed waveguide structure.

[0057] It should be noted that the Butler matrix feed network can be used to perform phase shifting and power division processing on the feed of the input port, and the output port forms different amplitude and phase distributions between antenna array elements, thereby generating beams pointing at different angles. Figure 3 As shown, Figure 3 The basic structure diagram of the Butler matrix in the first embodiment of the multi-beam antenna array integrated in the chip of the present invention. There are four input ports. Electrical signals are fed from different input ports. After the phase shift and power division processing inside the Butler matrix, a phase difference distribution of ±90° and ±45° is formed at the output four antenna ports.

[0058] It should be understood that the traditional substrate integrated waveguide side shielding uses metal vias, while this embodiment can achieve a better transition of the connection conversion structure and obtain better performance by enclosing a closed waveguide structure with metal walls, top metal and bottom metal. In the three-layer structure of the substrate integrated waveguide, the number of metal walls can be set according to the number of ports and whether the ports are adjacent. The specific number of metal walls can be changed according to actual production needs and is not specifically limited in this embodiment. The values ​​of parameters a0 and b can be determined by the cutoff frequency of the substrate integrated waveguide in the required frequency band.

[0059] The width between the two metal walls can be represented by parameter a0, which is the width of the port in the feed network. The thickness of the intermediate layer medium can be represented by parameter b. The values ​​of parameters a0 and b can be determined according to the cutoff frequency of the substrate integrated waveguide in the required frequency band. The width of the intermediate layer metal wall can be represented by parameter t. The value of parameter t can be determined according to the selected processing technology, and the thickness of the top metal and the bottom metal can also be determined according to the selected processing technology. The intermediate layer medium 20 can be made of semiconductor materials, such as silicon, gallium arsenide, etc.

[0060] In a possible implementation, the width a0 between the two metal walls can be set to 0.5 mm, the thickness b of the middle layer medium can be set to 0.1 mm, and the thickness of the top metal layer and the bottom metal layer can be set to 0.1 mm.

[0061] In this embodiment, a chip-integrated multi-beam antenna array includes: a Butler matrix feed network and antenna array elements; the Butler matrix feed network adopts a three-layer structure of a substrate integrated waveguide, including from bottom to top: a bottom metal, an intermediate layer medium and a top metal; the intermediate layer medium contains a plurality of metal walls, and the bottom metal, the top metal and each of the metal walls enclose a closed waveguide structure; the Butler matrix feed network can be used to perform phase shifting and power division processing on the feed of the input port, and the output port forms different amplitude and phase distributions between the antenna array elements, thereby generating beams pointing at different angles. By realizing the Butler matrix on the chip substrate and integrating the antenna array, it has the characteristics of low profile, small area and co-integration with the transceiver link, so that the antenna array has beam scanning capability in terahertz communication.

[0062] Reference Figure 4 , Figure 4 The schematic diagram of the structure of the Butler matrix feeding network of the second embodiment of the chip-integrated multi-beam antenna array of the present invention is as follows: Figure 4As shown, in this embodiment, the same or similar contents as those in the first embodiment can be referred to the above description, and will not be described in detail later. The Butler matrix feeding network includes: a first phase shifter 201, a first connection structure 202, a second phase shifter 203, a second connection structure 204, more than one bridge structure 205 and more than one switch 206.

[0063] It should be noted that the first phase shifter is connected to the input port via one of the bridge structures, the first phase shifter is connected to the second phase shifter via another of the bridge structures and the first connection structure, and the second phase shifter is connected to the antenna array element via the second connection structure; the first phase shifter is arranged in parallel with one of the converters, and the second phase shifter is arranged in parallel with another of the converters.

[0064] Reference Figure 5 , Figure 5 A schematic diagram of the structure of the bridge structure in the second embodiment of the chip-integrated multi-beam antenna array of the present invention. The bridge structure 205 may include: a first rectangular area formed by the metal wall surrounding the central area, and the distance from the port edge of the bridge structure to the metal wall of the first rectangular area gradually narrows. The bridge structure may include two input ports (refer to port 1 and port 2 in the figure) and two output ports (port 3 and port 4 in the figure) for evenly distributing energy to the two output ports for output at a phase difference of a first preset angle when the input port is fed. The two input ports of the bridge structure are isolated from each other, and when one input port is fed, the other input port does not obtain energy. The first preset angle can be set to 90°, that is, the bridge structure 205 can be a 90° bridge.

[0065] Furthermore, the two input ports and the two output ports of the bridge structure may be arranged adjacent to each other as shown in the figure and share a metal wall, or may be non-adjacent and respectively surrounded by two metal walls, which is not specifically limited in this embodiment.

[0066] It should be noted that the longitudinal length from the port edge of the bridge structure to the first rectangular area (expressed by parameter la0) and the length of the metal wall in the first rectangular area (expressed by parameter la1) are set according to the port transmission S parameter of the bridge structure. The spacing width of the metal wall in the first rectangular area (expressed by parameter a1) is set according to the port width of the bridge structure (i.e., the above-mentioned parameter a0).

[0067] It should be understood that the parameter la0 needs to be greater than the port transmission parameter at the working center frequency when the amplitude formula is satisfied. The amplitude formula is:

[0068] magnitude(S1(3,1))&magnitude(S1(4,1))<-3.7dB

[0069] Wherein, magnitude(S1(3,1)) is the amplitude of the port transmission S parameter between port 3 and port 1 of the bridge structure, and magnitude9S1(4,1)) is the amplitude of the port transmission S parameter between port 4 and port 1 of the bridge structure. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, at which time, parameter la0=1.5*a0.

[0070] Furthermore, the size of parameter a0 is greater than parameter a1, and (2a1-a0) / a0 needs to be between 10% and 20%. In a possible implementation, it can be 15%.

[0071] Furthermore, the value of parameter la1 can also be determined according to the phase of the port transmission S parameter, that is, the value is determined under the phase formula at the working center frequency point. The phase formula is:

[0072] Phase(S1(4,1))-Phase(S1(3,1))=90°

[0073] Among them, Phase(S1(4,1)) is the phase of the port transmission S parameter between port 4 and port 1 of the bridge structure, and Phase(S1(3,1)) is the phase of the port transmission S parameter between port 3 and port 1 of the bridge structure. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, at this time, the parameter la1 = 1.02*a0.

[0074] Reference Figure 6 , Figure 6 A schematic diagram of the structure of the converter in the second embodiment of the chip-integrated multi-beam antenna array of the present invention. The converter 206 may include: a second rectangular area formed by the metal wall enclosed in the central area, the distance from the port edge of the converter to the metal wall of the second rectangular area gradually narrows, the first input port and the first output port of the converter are arranged opposite to each other on both sides of the second rectangular area, and the second input port and the second output port are arranged opposite to each other on both sides of the second rectangular area. The converter can be used to distribute all energy to the second output port (port 4) for output when the first input port (port 1) is fed, and it is also used to distribute all energy to the first output port (port 3) for output when the second input port (port 2) is fed. That is, the converter can transfer energy from one port to the port in its diagonal direction.

[0075] It should be noted that the longitudinal length from the port edge of the converter to the second rectangular area (expressed by parameter la00) and the length of the metal wall in the second rectangular area (expressed by parameter la2) are set according to the port transmission parameters of the converter; the spacing width of the metal wall in the second rectangular area (expressed by parameter a2) is set according to the port width of the converter (i.e. the above-mentioned parameter a0).

[0076] It should be understood that the parameter la00 needs to be greater than the port transmission parameter at the working center frequency when the amplitude formula is satisfied. The amplitude formula is:

[0077] magnitude(S2(4,1))<-0.3dB

[0078] Wherein, magnitude(S2(3,1)) is the amplitude of the port transmission S parameter between port 3 and port 1 of the converter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, and at this time, parameter la00=1.5*a0.

[0079] Furthermore, the size of parameter a0 is greater than parameter a2, and (2a2-a0) / a0 needs to be between 10% and 20%. In a possible implementation, it can be 15%.

[0080] Furthermore, the value of parameter la2 can also be determined according to the amplitude of the port transmission S parameter, that is, the value is determined under the amplitude formula at the working center frequency point, and the amplitude formula is:

[0081] magnitude(S2(4,1))-magnitude(S2(3,1))>-27dB

[0082] Wherein, magnitude(S2(4,1)) is the amplitude of the port transmission S parameter between port 4 and port 1 of the converter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, and at this time, parameter la2=1.95*a0.

[0083] Reference Figure 7 , Figure 7A schematic diagram of the structure of the first phase shifter in the second embodiment of the multi-beam antenna array integrated with the chip of the present invention. The first phase shifter 201 may include: a first gradual transition region formed by the metal wall with a narrow center position and a wide port position. The first phase shifter can be used to generate a phase difference of a second preset angle at the output port compared to the input port when the input port is fed. The second preset angle can be set to 45°, that is, the first phase shifter 201 can be a 45° phase shifter. The first gradual transition region can be a linear transition (oblique straight line) or a nonlinear transition (curve).

[0084] It should be noted that the longitudinal length from the edge of the input port to the edge of the output port of the first phase shifter (expressed by parameter lb1) is set according to the length of the converter (i.e., lb1=2*la00+la2). The center position width of the first phase shifter (expressed by parameter a3) and the offset distance from the metal wall at the center position to the metal wall at the port (expressed by parameter loff1) are set according to the port transmission parameters of the first phase shifter. The value of a3 is smaller than the port width of the first phase shifter (i.e., the above-mentioned parameter a0).

[0085] It should be understood that the parameter a3 needs to be taken when the port transmission parameter satisfies the amplitude formula at the working center frequency. The amplitude formula is:

[0086] magnitude(S3(2,1))<-0.3dB

[0087] Wherein, magnitude(S3(2,1)) is the amplitude of the port transmission S parameter between port 2 and port 1 of the first phase shifter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, and at this time, parameter a3=0.685*a0.

[0088] Furthermore, the value of the parameter loff1 needs to be taken when the port transmission parameter satisfies the phase formula at the working center frequency. The phase formula is:

[0089] Phase(S3(2,1))-Phase(S2(4,1))=45°

[0090] Among them, Phase(S3(2,1)) is the phase of the port transmission S parameter between port 2 and port 1 of the first phase shifter, and Phase(S2(4,1)) is the phase of the port transmission S parameter between port 4 and port 1 of the converter. That is, under the same physical length, the phase generated by the first phase shifter should be 45° more than the phase generated by the converter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220GHz, at this time, the parameter loff1=1.95*a0.

[0091] Reference Figure 8 , Figure 8 A schematic diagram of the structure of the second phase shifter in the second embodiment of the multi-beam antenna array integrated with the chip of the present invention. The second phase shifter 203 may include: a second gradual transition region formed by the metal wall, which is narrow at the center position and wide at the port position. The second phase shifter can be used to generate a phase difference of a third preset angle at the output port compared to the input port when the input port is fed. The third preset angle can be set to 0°, that is, the second phase shifter 203 can be a 0° phase shifter, and the phase difference generated by the 0° phase shifter is the same as the phase difference generated by the switch. The second gradual transition region can be a linear transition (oblique straight line) or a nonlinear transition (curve).

[0092] It should be noted that the longitudinal length from the edge of the input port to the edge of the output port of the second phase shifter (expressed by parameter lb2) is set according to the length of the switch (i.e., lb2=2*la00+la2). The center position width of the second phase shifter (expressed by parameter a4) and the offset distance from the metal wall at the center position to the metal wall at the port (expressed by parameter loff2) are set according to the port transmission parameters of the second phase shifter. The value of a4 is smaller than the port width of the first phase shifter (i.e., the above-mentioned parameter a0).

[0093] It should be understood that parameter a4 needs to be taken when the port transmission parameter satisfies the amplitude formula at the working center frequency. The amplitude formula is:

[0094] magnitude(S4(2,1))<-0.3dB

[0095] Wherein, magnitude(S4(2,1)) is the amplitude of the port transmission S parameter between port 2 and port 1 of the second phase shifter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220 GHz, and at this time, parameter a4=0.685*a0.

[0096] Furthermore, the value of the parameter loff2 needs to be taken when the port transmission parameter satisfies the phase formula at the working center frequency. The phase formula is:

[0097] Phase(S4(2,1))-Phase(S2(4,1))=0°

[0098] Among them, Phase(S4(2,1)) is the phase of the port transmission S parameter between port 2 and port 1 of the second phase shifter, and Phase(S2(4,1)) is the phase of the port transmission S parameter between port 4 and port 1 of the converter. That is, under the same physical length, the phase generated by the second phase shifter should be 0° more than the phase generated by the converter. In a possible implementation, the center frequency of the chip integrated multi-beam antenna array is 220GHz, at this time, the parameter loff1=0.24*a0.

[0099] Furthermore, the length of the metal wall in the first connection structure 202 is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated with the chip, and the spacing between the metal walls in the first connection structure 202 is the same.

[0100] It should be understood that the first connection structure and the second connection structure have the function of connecting the aforementioned structures and can also serve as a smooth transition area. From the perspective of smooth transition, the length of the connection conversion structure is as long as possible, but from the perspective of miniaturization and reducing dielectric loss, the length of the connection conversion structure should be as short as possible.

[0101] It should be noted that the physical length of the first connection structure 202 should be greater than three waveguide wavelengths of the lowest frequency point of the working frequency band. In a possible implementation, the lowest frequency point of the working frequency band is 200 GHz, the waveguide wavelength under silicon filling is about 0.43 mm, and the length of the first connection structure 202 should be greater than 1.29 mm, and the actual value can be 1.5 mm.

[0102] Furthermore, the length of the metal wall in the second connection structure 204 is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated with the chip, and the spacing between the metal walls in the first connection structure 204 is the same.

[0103] It should be noted that the physical length of the second connection structure 204 should be greater than 5 waveguide wavelengths of the lowest frequency point of the working frequency band. At the same time, if the spacing between the ports is less than the spacing between the antenna array elements, the physical length of the second connection structure 204 should be increased by at least 3 waveguide wavelengths. In a possible implementation, the spacing between the ports is 0, the spacing between the antenna array elements is 0.37 mm, and the actual length of the second connection structure 204 is 3.5 mm.

[0104] Furthermore, the side with smaller slope / curvature of the first phase shifter (i.e., 45° phase shifter) and the second phase shifter (i.e., 0° phase shifter) should be placed adjacent to the converter. If the layer with larger curvature is adjacent to the converter, there will be a large mode mismatch in the electromagnetic field from the bridge structure to the phase shifting direction of the first phase shifter and the second phase shifter, which may lead to performance degradation.

[0105] In this embodiment, the Butler matrix feeding network includes: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure and more than one converter; the first phase shifter is connected to the input port through one bridge structure, the first phase shifter is connected to the second phase shifter through another bridge structure and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure; the first phase shifter is arranged in parallel with one converter, and the second phase shifter is arranged in parallel with another converter. The energy is distributed and the required phase difference is generated through the bridge structure. The converter transmits energy from one port to the port in the diagonal direction. The first phase shifter and the second phase shifter generate a phase difference, so that the Butler matrix is ​​realized on the chip substrate and an antenna array is integrated, so that the antenna array has a beam scanning capability in terahertz communication.

[0106] Reference Fig. 9 , Fig. 9 The third embodiment of the multi-beam antenna array integrated with a chip of the present invention is proposed based on the above embodiments. Fig. 9 As shown, in this embodiment, the same or similar contents as those in the above embodiments can be referred to the above introduction and will not be described in detail later.

[0107] The antenna array element includes: a dielectric resonator antenna fed by a slot; the dielectric resonator antenna is a rectangular parallelepiped structure, arranged on the top metal; the length (expressed by parameter lo), width (expressed by parameter wo) and height (expressed by parameter ho) of the dielectric resonator antenna are set according to the field distribution mode and the waveguide wavelength. A rectangular slot 23 is arranged on the top metal, and the dielectric resonator antenna is arranged on the rectangular slot; the length (expressed by parameter ls) and width (expressed by parameter ws) of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna; the distance (expressed by parameter po) between the collective center of the rectangular slot and the edge of the top metal (refer to the metal side wall 22 in the figure) is set according to the return loss of the antenna.

[0108] It should be noted that the electromagnetic field energy is radiated into space from the gaps in the top metal. At the same time, the frequency and distribution pattern of the radiated electromagnetic field match the field distribution pattern in the dielectric block, thereby realizing the dielectric resonance function. Using a dielectric resonator antenna can increase the directivity coefficient and thus increase the gain.

[0109] In one possible implementation, the waveguide wavelength is 220 GHz in a silicon medium with a dielectric constant of 11.9, parameter wo and parameter lo are equal to 1.625 times the waveguide wavelength, parameter ho is equal to 0.9 times the waveguide wavelength, parameter ws is equal to 0.16 times the waveguide wavelength, parameter ls is equal to 0.564 times the waveguide wavelength, and parameter po is equal to 0.47 times the waveguide wavelength.

[0110] The multi-beam antenna array integrated in the chip of the present invention generates beams pointing at different angles, which can be referred to Fig.10 and Fig.11 ,in, Fig.10 The three-dimensional radiation pattern of a beam at 220 GHz in the third embodiment of the multi-beam antenna array integrated on the chip of the present invention, Fig.11 The two-dimensional radiation pattern of four beams at 220 GHz in the third embodiment of the chip-integrated multi-beam antenna array of the present invention.

[0111] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

[0112] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0113] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0114] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

Claims

1. A chip-integrated multi-beam antenna array, characterized in that: The chip-integrated multi-beam antenna array includes: a Butler matrix feeding network and antenna array elements; The Butler matrix feeding network adopts a three-layer structure of substrate integrated waveguide, which includes from bottom to top: bottom metal, middle dielectric layer and top metal layer; The intermediate layer medium includes a plurality of metal walls, and the bottom metal, the top metal and the metal walls together form a closed waveguide structure; The Butler matrix feeding network is used to perform phase shifting and power division processing on the feeding of the input port, and the output port forms different amplitude and phase distributions between antenna array elements, thereby generating beams pointing at different angles.

2. The chip-integrated multi-beam antenna array according to claim 1, characterized in that: The Butler matrix feed network includes: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure and more than one switch; The first phase shifter is connected to the input port through one of the bridge structures, the first phase shifter is connected to the second phase shifter through another of the bridge structures and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure; The first phase shifter is arranged in parallel with one of the converters, and the second phase shifter is arranged in parallel with another of the converters.

3. The chip-integrated multi-beam antenna array according to claim 2, characterized in that: The bridge structure comprises: a first rectangular area formed by the metal wall surrounding the central area, and a distance from the port edge of the bridge structure to the metal wall of the first rectangular area gradually narrows; The longitudinal length from the port edge of the bridge structure to the first rectangular area and the length of the metal wall in the first rectangular area are set according to the port transmission parameters of the bridge structure; The spacing width of the metal walls in the first rectangular area is set according to the port width of the bridge structure; The bridge structure is used to evenly distribute energy to two output ports for output with a phase difference of a first preset angle when power is fed to the input port.

4. The chip-integrated multi-beam antenna array according to claim 2, characterized in that: The circuit converter comprises: a second rectangular area whose central area is surrounded by the metal wall, the distance between the port edge of the circuit converter and the metal wall of the second rectangular area gradually narrows, the first input port and the first output port of the circuit converter are arranged opposite to each other on both sides of the second rectangular area, and the second input port and the second output port are arranged opposite to each other on both sides of the second rectangular area; The longitudinal length from the port edge of the converter to the second rectangular area and the length of the metal wall in the second rectangular area are set according to the port transmission parameters of the converter; The spacing width of the metal walls in the second rectangular area is set according to the port width of the converter; The switch is used to distribute all the energy to the second output port for output when the first input port is powered, and is also used to distribute all the energy to the first output port for output when the second input port is powered.

5. The chip-integrated multi-beam antenna array according to claim 4, characterized in that: The first phase shifter comprises: a first gradual transition region surrounded by the metal wall, which is narrow at the center and wide at the port; The longitudinal length from the input port edge to the output port edge of the first phase shifter is set according to the length of the converter; The center position width of the first phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the first phase shifter; The first phase shifter is used to generate a phase difference of a second preset angle at the output port compared to the input port when the input port is fed.

6. The chip-integrated multi-beam antenna array according to claim 5, characterized in that: The second phase shifter comprises: a second gradual transition region surrounded by the metal wall, which is narrow at the center and wide at the port; The longitudinal length from the input port edge to the output port edge of the second phase shifter is set according to the length of the switch; The center position width of the second phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the second phase shifter; The second phase shifter is used to generate a phase difference of a third preset angle at the output port compared with the input port when the input port is fed.

7. The chip-integrated multi-beam antenna array according to claim 2, characterized in that: The length of the metal wall in the first connection structure is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated with the chip, and the spacing between the metal walls in the first connection structure is the same.

8. The chip-integrated multi-beam antenna array according to claim 2, characterized in that: The length of the metal wall in the second connection structure is set according to the waveguide wavelength of the lowest frequency point in the working frequency band of the multi-beam antenna array integrated on the chip, and the spacing between the metal walls in the second connection structure is the same.

9. The chip-integrated multi-beam antenna array according to claim 1, characterized in that: The antenna array element comprises: a dielectric resonator antenna fed by a slot; The dielectric resonator antenna is a rectangular parallelepiped structure and is arranged on the top metal layer; The length, width and height of the dielectric resonator antenna are set according to the field distribution mode and the waveguide wavelength.

10. The chip-integrated multi-beam antenna array according to claim 9, characterized in that: A rectangular slot is provided on the top metal layer, and the dielectric resonator antenna is provided on the rectangular slot; The length and width of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna; The distance between the collective center of the rectangular slots and the edge of the top metal layer is set according to the return loss of the antenna.

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