Driving circuit of buck-boost circuit and energy storage power supply

Abstract

The present application relates to a driving circuit for a buck-boost circuit and an energy storage power supply. The buck-boost circuit includes a boost bridge arm and a buck bridge arm, and the driving circuit includes a buck driving module and a boost driving module; the buck driving module is connected to the first auxiliary power supply and the midpoint of the boost bridge arm, respectively, and the boost driving module is connected to the second auxiliary power supply and the midpoint of the buck bridge arm, respectively. The buck driving module converts the voltage output by the first auxiliary power supply into a first output voltage in response to the potential information of the midpoint of the boost bridge arm, and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm; the boost driving module converts the voltage output by the second auxiliary power supply into a second output voltage in response to the potential information of the midpoint of the buck bridge arm, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm. The use of this driving circuit can reduce hardware costs.

Description

Technical Field

[0001] The present application relates to the field of energy storage technology, and in particular to a driving circuit of a buck-boost circuit and an energy storage power supply. Background Art

[0002] In the field of energy storage power supplies, it is usually necessary to charge the energy storage battery through the input port. Since the voltage of the input port may be higher or lower than the voltage of the energy storage battery, the input port generally adopts a buck-boost circuit with four switches (such as transistors). In this way, the input port can flexibly perform boost output or buck output through the buck-boost circuit.

[0003] To improve the efficiency of the buck-boost circuit, conventional four-switch buck-boost circuits typically have only two switches in a complementary conduction state, while the other two switches are in a normally on or normally off state. The normally on switches are typically on the high side, so the high-side switches are typically driven in a floating manner.

[0004] Currently, isolated power is typically generated using transformer windings, or a dedicated pulse width modulation (PWM) controller output generates a charge pump to drive the high-side switch. However, current drive methods have the problem of high hardware costs. Summary of the Invention

[0005] Based on this, it is necessary to provide a driving circuit for a buck-boost circuit and an energy storage power supply that can reduce hardware costs in order to address the above technical problems.

[0006] In a first aspect, the present application provides a drive circuit for a buck-boost circuit, wherein the buck-boost circuit includes a boost bridge arm and a buck bridge arm, and the drive circuit includes a buck drive module and a boost drive module; the buck drive module is respectively connected to a first auxiliary power supply and a midpoint of the boost bridge arm, and the boost drive module is respectively connected to a second auxiliary power supply and a midpoint of the buck bridge arm;

[0007] The buck driving module converts the voltage output by the first auxiliary power supply into a first output voltage in response to the potential information of the midpoint of the boost bridge arm, and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm;

[0008] The boost driving module converts the voltage output by the second auxiliary power supply into a second output voltage in response to the potential information of the midpoint of the buck bridge arm, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm.

[0009] In one embodiment, the boost driving module and the buck driving module have the same structure.

[0010] In one embodiment, the buck driving module includes a first driving unit and a first bootstrap unit connected to each other; the first bootstrap unit is connected to a first auxiliary power supply;

[0011] The first driving unit drives the first bootstrap unit to charge and discharge in response to the potential information of the midpoint of the boost bridge arm, so as to convert the voltage output by the first auxiliary power supply into a first output voltage.

[0012] In one embodiment, the first bootstrap unit includes a first charging subunit and a second charging subunit; a first end of the first charging subunit is connected to the first auxiliary power supply, a first end of the second charging subunit is connected to the first end of the first charging subunit, and a second end of the second charging subunit is connected to the second end of the first charging subunit via a first driving unit;

[0013] The first driving unit is configured to be in a cut-off state when the potential information of the midpoint of the boost bridge arm is a first potential, and to control the first auxiliary power supply to charge the first charging sub-unit, so as to convert the voltage output by the first auxiliary power supply into the first output voltage through the discharge of the first charging sub-unit; and to be in a conduction state when the potential information of the midpoint of the boost bridge arm is a second potential, and to control the first charging sub-unit to charge the second charging sub-unit, so as to convert the voltage output by the first auxiliary power supply into the first output voltage through the discharge of the second charging sub-unit.

[0014] In one embodiment, the first driving unit includes a first transistor; the second end of the first charging subunit is connected to the emitter of the first transistor, and the second end of the second charging subunit is respectively connected to the base of the first transistor and the collector of the first transistor, and the base of the first transistor is also used to receive the potential information of the midpoint of the boost bridge arm.

[0015] In one embodiment, the buck driver module further includes at least one of the following:

[0016] a first diode, wherein an anode of the first diode is connected to the first auxiliary power supply, and a cathode of the first diode is connected to the first end of the first charging subunit;

[0017] a second diode, wherein an anode of the second diode is connected to the first end of the first charging subunit, and a cathode of the second diode is connected to the first end of the second charging subunit;

[0018] a third diode, wherein an anode of the third diode is connected to the emitter of the first transistor, and a cathode of the third diode is connected to the base of the first transistor;

[0019] A fourth diode, wherein the anode of the fourth diode is connected to the base of the first transistor, and the cathode of the fourth diode is used to receive the potential information of the midpoint of the boost bridge arm.

[0020] In one embodiment, the buck driver module further includes at least one of a first resistor and a second resistor:

[0021] The first resistor is provided between the first auxiliary power source and the first end of the first charging subunit;

[0022] The second resistor is arranged between the base of the first transistor and the second end of the second charging subunit.

[0023] In one embodiment, the driving circuit further includes a first detection module and a second detection module; the first detection module is disposed at the midpoint of the boost bridge arm, and the second detection module is disposed at the midpoint of the buck bridge arm;

[0024] A first detection module is used to determine the potential information of the midpoint of the boost bridge arm and send the potential information of the midpoint of the boost bridge arm to the buck driving module;

[0025] The second detection module is used to determine the potential information of the midpoint of the buck bridge arm and send the potential information of the midpoint of the buck bridge arm to the boost driving module.

[0026] In one embodiment, the driving circuit further includes a first driver and a second driver;

[0027] The buck driving module is connected to the first driver, and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm through the first driver;

[0028] The boost driving module is connected to the second driver, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm through the second driver.

[0029] In a second aspect, the present application further provides an energy storage power supply, which includes a buck-boost circuit and any one of the above drive circuits.

[0030] In the aforementioned buck-boost circuit drive circuit and energy storage power supply, the drive circuit includes a buck drive module and a boost drive module. Since the buck-boost circuit includes a boost bridge arm and a buck bridge arm, and the buck drive module is connected to the first auxiliary power supply and the midpoint of the boost bridge arm, respectively, and the boost drive module is connected to the second auxiliary power supply and the midpoint of the buck bridge arm, respectively, the buck drive module can respond to potential information at the midpoint of the boost bridge arm, and the boost drive module can respond to potential information at the midpoint of the buck bridge arm. Furthermore, the buck drive module can, after responding to the potential information at the midpoint of the boost bridge arm, convert the voltage output by the first auxiliary power supply into a first output voltage, and the boost drive module can, after responding to the potential information at the midpoint of the buck bridge arm, convert the voltage output by the second auxiliary power supply into a second output voltage, thereby providing a drive voltage for the upper transistor of the buck bridge arm via the first output voltage, and providing a drive voltage for the upper transistor of the boost bridge arm via the second output voltage. In this process, there's no need to use transformer windings to generate an isolated power supply, nor is there a need for a dedicated PWM controller output to generate a charge pump. Instead, the first and second output voltages can provide the drive voltage for the high-side transistor, thereby reducing hardware costs. Furthermore, the potential information from the midpoints of the step-down bridge arm and the boost bridge arm allows for a more reliable drive voltage for the high-side transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments of the present application or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 is a schematic diagram of a driving circuit in one embodiment;

[0033] Figure 2 is a schematic diagram of a buck driving module in one embodiment;

[0034] Figure 3 is a schematic diagram of a first bootstrap unit in one embodiment;

[0035] Figure 4 is a schematic diagram of a first driving unit in one embodiment;

[0036] Figure 5 is a schematic diagram of yet another driving circuit in one embodiment;

[0037] Figure 6 is a schematic diagram of yet another driving circuit in one embodiment;

[0038] Figure 7 is a schematic diagram of yet another driving circuit in one embodiment;

[0039] Figure 8 is a schematic diagram of yet another driving circuit in one embodiment;

[0040] Figure 9 Schematic diagram of an energy storage power supply in one embodiment. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0042] Figure 1 FIG. 1 is a schematic diagram of a driving circuit in an embodiment. In an embodiment, a driving circuit 200 applied to a buck-boost circuit is provided. Figure 1 A four-switch buck-boost circuit 100 is shown, wherein VIN represents the input voltage of the buck-boost circuit 100 , and VOUT represents the output voltage of the buck-boost circuit 100 .

[0043] The buck-boost circuit 100 includes a boost bridge arm and a buck bridge arm. Figure 1 In the boost bridge arm, transistors Q1 and Q2 are included, and the buck bridge arm includes transistors Q3 and Q4. When the buck-boost circuit 100 is in boost mode, transistor Q3 is normally on, transistor Q4 is normally off, and transistors Q1 and Q2 are complementary to each other. When the buck-boost circuit 100 is in buck mode, transistor Q1 is normally on, transistor Q2 is normally off, and transistors Q3 and Q4 are complementary to each other. It can be understood that transistor Q1 is the upper transistor in the boost bridge arm, and transistor Q3 is the upper transistor in the buck bridge arm. That is, transistors Q1 and Q3 are transistors on the high side of the buck-boost circuit 100.

[0044] Please continue to refer to Figure 1 The driving circuit 200 includes a buck driving module 201 and a boost driving module 203. The buck driving module 201 is connected to the first auxiliary power supply 202 and the midpoint of the boost bridge arm respectively, and the boost driving module 203 is connected to the second auxiliary power supply 204 and the midpoint of the buck bridge arm respectively.

[0045] It is understandable that in Figure 1 In the embodiment, the midpoint of the boost bridge arm is the connection point between transistor Q1 and transistor Q2, and the midpoint of the buck bridge arm is the connection point between transistor Q3 and transistor Q4.

[0046] The first auxiliary power source 202 and the second auxiliary power source 204 can be any form of current source or voltage source. The first auxiliary power source 202 and the second auxiliary power source 204 can be the same power source or different power sources.

[0047] The potential information BOOST_SW at the midpoint of the boost bridge arm can represent the operating state of the boost bridge arm. For example, if transistor Q1 is on and transistor Q2 is off, the potential information BOOST_SW at the midpoint of the boost bridge arm is high. If transistor Q1 is off and transistor Q2 is on, the potential information BOOST_SW at the midpoint of the boost bridge arm is low.

[0048] Furthermore, the buck driving module 201 can convert the voltage output by the first auxiliary power supply 202 into the first output voltage in response to the potential information BOOST_SW of the midpoint of the boost bridge arm.

[0049] Optionally, the buck driver module 201 may include a voltage conversion topology and, based on the potential information BOOST_SW of the midpoint of the boost bridge arm, convert the voltage output by the first auxiliary power supply 202 into the first output voltage via the voltage conversion topology. The buck driver module 201 may also include an energy storage element and, based on the potential information BOOST_SW of the midpoint of the boost bridge arm, utilize the charging and discharging of the energy storage element to convert the voltage output by the first auxiliary power supply 202 into the first output voltage, although this embodiment is not limited thereto. Voltage conversion topologies include, but are not limited to, DC converters.

[0050] The first output voltage is denoted as VBOOT1. The first output voltage VBOOT1 can provide a driving voltage for the upper transistor of the buck bridge arm. Optionally, the first output voltage VBOOT1 can provide a driving voltage for the upper transistor of the buck bridge arm via an optocoupler isolation driving circuit or a bootstrap circuit.

[0051] Similarly, the potential information BUCK_SW at the midpoint of the buck bridge arm can represent the operating state of the buck bridge arm. For example, if transistor Q3 is on and transistor Q4 is off, the potential information BUCK_SW at the midpoint of the buck bridge arm is high. If transistor Q3 is off and transistor Q4 is on, the potential information BUCK_SW at the midpoint of the buck bridge arm is low.

[0052] Furthermore, the boost driving module 203 can convert the voltage output by the second auxiliary power supply 204 into a second output voltage in response to the potential information BUCK_SW of the midpoint of the buck bridge arm.

[0053] Likewise, optionally, the boost driver module 203 may include a voltage conversion topology and, based on the potential information BUCK_SW of the midpoint of the buck bridge arm, convert the voltage output by the second auxiliary power supply 204 into a second output voltage through the voltage conversion topology. The boost driver module 203 may also include an energy storage element and, based on the potential information BUCK_SW of the midpoint of the buck bridge arm, utilize the charging and discharging of the energy storage element to convert the voltage output by the second auxiliary power supply 204 into the second output voltage, but this embodiment is not limited thereto. It should be noted that the structures of the buck driver module 201 and the boost driver module 203 may be the same or different. For example, the buck driver module 201 may include a voltage conversion topology, and the boost driver module 203 may include an energy storage element.

[0054] The second output voltage is denoted as VBOOT2, and further, the second output voltage VBOOT2 provides a driving voltage for the upper transistor of the boost bridge arm. Optionally, the second output voltage VBOOT2 can provide a driving voltage for the upper transistor of the boost bridge arm through an optocoupler isolation driving circuit or a bootstrap circuit.

[0055] The above-mentioned driving circuit 200 applied to the buck-boost circuit includes a buck driving module 201 and a boost driving module 203. Since the buck-boost circuit 100 includes a boost bridge arm and a buck bridge arm, and the buck driving module 201 is respectively connected to the first auxiliary power supply 202 and the midpoint of the boost bridge arm, and the boost driving module 203 is respectively connected to the second auxiliary power supply 204 and the midpoint of the buck bridge arm, therefore, the buck driving module 201 can respond to the potential information of the midpoint of the boost bridge arm, and the boost driving module 203 can respond to the potential information of the midpoint of the buck bridge arm. Furthermore, the buck driver module 201 can convert the voltage output by the first auxiliary power supply 202 into a first output voltage after responding to the potential information of the midpoint of the boost bridge arm. The boost driver module 203 can convert the voltage output by the second auxiliary power supply 204 into a second output voltage after responding to the potential information of the midpoint of the buck bridge arm, so as to provide a driving voltage for the upper tube of the buck bridge arm through the first output voltage and provide a driving voltage for the upper tube of the boost bridge arm through the second output voltage. In this process, there is no need to use a transformer winding to generate an isolated power supply, nor is there a need for a dedicated PWM charge pump generated by the controller output. Instead, the first output voltage and the second output voltage can provide a driving voltage for the high-side transistor, thereby reducing hardware costs. In addition, the potential information of the midpoint of the buck bridge arm and the potential information of the midpoint of the boost bridge arm can more reliably provide a driving voltage for the high-side transistor.

[0056] In an exemplary embodiment, optionally, the boost driving module 203 has the same structure as the buck driving module 201. Further optionally, the structures of the boost driving module 203 and the buck driving module 201 can be symmetrical.

[0057] In related technologies, the method of generating an isolated power supply through transformer windings is bulky and costly. The method of generating a charge pump through PWM easily consumes controller resources and requires a large number of circuit components. In the above embodiment, since the boost driver module 203 has the same structure as the buck driver module 201, this not only reduces costs but also facilitates subsequent manufacturing and improves production efficiency.

[0058] The following mainly introduces the buck driving module 201 as an example. The principles of the boost driving module 203 and the buck driving module 201 are similar and will not be described in detail below.

[0059] Figure 2 FIG. 1 is a schematic diagram of a buck driving module in an embodiment, Figure 2 As shown, in an exemplary embodiment, optionally, the buck driving module 201 includes a first driving unit 2011 and a first bootstrap unit 2012 connected to each other; the first bootstrap unit 2012 is connected to the first auxiliary power supply 202 .

[0060] The first driving unit 2011 drives the first bootstrap unit 2012 to charge and discharge in response to the potential information of the midpoint of the boost bridge arm, so as to convert the voltage output by the first auxiliary power supply 202 into the first output voltage.

[0061] Optionally, the first driving unit 2011 may include a logic subunit, which responds to the potential information of the midpoint of the boost bridge arm and outputs a logic signal to the first bootstrap unit 2012, thereby controlling the charging and discharging of the first bootstrap unit 2012 using the logic signal. The logic subunit includes, but is not limited to, an AND gate, an OR gate, a NOT gate, and the like.

[0062] For example, the logic subunit can determine whether the boost bridge arm is in a complementary conduction state based on the potential information of the midpoint of the boost bridge arm. If the boost bridge arm is in the complementary conduction state, the logic subunit outputs a high-level logic signal to the first bootstrap unit 2012, thereby controlling the first bootstrap unit 2012 to charge and discharge, thereby converting the voltage output by the first auxiliary power supply 202 into the first output voltage. For another example, if the boost bridge arm is not in the complementary conduction state, the logic subunit can output a low-level logic signal to the first bootstrap unit 2012, thereby causing the first bootstrap unit 2012 to stop charging and discharging.

[0063] In the above embodiment, since the buck driving module 201 includes the first driving unit 2011 and the first bootstrap unit 2012 connected to each other, and the first bootstrap unit 2012 is connected to the first auxiliary power supply 202, the first driving unit 2011 can drive the first bootstrap unit 2012 to charge and discharge in response to the potential information of the midpoint of the boost bridge arm, so as to convert the voltage output by the first auxiliary power supply 202 into the first output voltage. Without the need for complex hardware design, the driving voltage can be efficiently and reliably provided to the upper tube of the buck bridge arm through the first output voltage.

[0064] Also optionally, the boost driver module 203 includes a second drive unit and a second bootstrap unit connected to each other; the second bootstrap unit is connected to the second auxiliary power supply 204. The second drive unit drives the second bootstrap unit to charge and discharge in response to the potential information of the midpoint of the step-down bridge arm, thereby converting the voltage output by the second auxiliary power supply 204 into a second output voltage.

[0065] Figure 3 FIG. 1 is a schematic diagram of a first bootstrap unit in an embodiment, Figure 3 As shown, in an exemplary embodiment, optionally, the first bootstrap unit 2012 includes a first charging subunit 2012a and a second charging subunit 2012b. The first charging subunit 2012a and the second charging subunit 2012b each include at least one energy storage element, including but not limited to a capacitor.

[0066] Among them, the first end of the first charging sub-unit 2012a is connected to the first auxiliary power supply 202, the first end of the second charging sub-unit 2012b is connected to the first end of the first charging sub-unit 2012a, and the second end of the second charging sub-unit 2012b and the second end of the first charging sub-unit 2012a are connected through the first driving unit 2011.

[0067] Furthermore, the first driving unit 2011 is configured to be in a cut-off state when the potential information of the midpoint of the boost bridge arm is a first potential, and to control the first auxiliary power supply 202 to charge the first charging sub-unit 2012a, so as to convert the voltage output by the first auxiliary power supply 202 into a first output voltage through the discharge of the first charging sub-unit 2012a, and to be in a conduction state when the potential information of the midpoint of the boost bridge arm is a second potential, and to control the first charging sub-unit 2012a to charge the second charging sub-unit 2012b, so as to convert the voltage output by the first auxiliary power supply 202 into the first output voltage through the discharge of the second charging sub-unit 2012b.

[0068] In this embodiment, the first potential is, for example, a low level, and the second potential is, for example, a high level.

[0069] The first driving unit 2011 is configured to receive BOOST_SW, the potential information of the midpoint of the boost bridge arm. Exemplarily, the first driving unit 2011 may include a switching element, including but not limited to a relay, a diode, or an insulated gate bipolar transistor (IGBT). Thus, when the first driving unit 2011 receives BOOST_SW, the potential information of the midpoint of the boost bridge arm, which indicates a low level, the switching element in the first driving unit 2011 may be used to control the first driving unit 2011 to be in an off state. Alternatively, when the BOOST_SW, the potential information of the midpoint of the boost bridge arm, is in a low level, the switching element in the first driving unit 2011 may be used to control the first driving unit 2011 to be in an on state.

[0070] When the first driving unit 2011 is in the off state, the path between the first auxiliary power supply 202 and the first charging sub-unit 2012a can be used to control the first auxiliary power supply 202 to charge the first charging sub-unit 2012a. This way, after charging the first charging sub-unit 2012a, the voltage across the first charging sub-unit 2012a is raised. Furthermore, the voltage output by the first auxiliary power supply 202 can be converted into a first output voltage through the discharge of the first charging sub-unit 2012a. In this case, the first output voltage can also be understood as the discharge voltage across the first charging sub-unit 2012a.

[0071] When the first driving unit 2011 is in the on state, the path between the first charging sub-unit 2012a and the second charging sub-unit 2012b is also connected. Therefore, the path between the first charging sub-unit 2012a and the second charging sub-unit 2012b can be used to control the first charging sub-unit 2012a to charge the second charging sub-unit 2012b. Similarly, after charging the second charging sub-unit 2012b, the voltage across the second charging sub-unit 2012b is raised. Furthermore, the discharge of the second charging sub-unit 2012b can convert the output voltage of the first auxiliary power supply 202 into the first output voltage. In this case, the first output voltage can also be understood as the discharge voltage across the second charging sub-unit 2012b.

[0072] In the above embodiment, since the first bootstrap unit 2012 includes a first charging sub-unit 2012a and a second charging sub-unit 2012b; the first end of the first charging sub-unit 2012a is connected to the first auxiliary power supply 202, the first end of the second charging sub-unit 2012b is connected to the first end of the first charging sub-unit 2012a, and the second end of the second charging sub-unit 2012b is connected to the second end of the first charging sub-unit 2012a through the first driving unit 2011, bootstrapping can be achieved by charging and discharging the first charging sub-unit 2012a or the second charging sub-unit 2012b, thereby obtaining the first output voltage and the first output voltage that can provide a driving voltage for the high-side transistor in the buck-boost circuit 100.

[0073] In an exemplary embodiment, the second bootstrap unit optionally includes a third charging subunit and a fourth charging subunit. A first end of the third charging subunit is connected to the second auxiliary power supply 204, a first end of the fourth charging subunit is connected to a first end of the third charging subunit, and a second end of the fourth charging subunit is connected to a second end of the third charging subunit via a second driving unit.

[0074] The second driving unit is configured to be in a cut-off state when the potential information of the midpoint of the step-down bridge arm is a third potential, and to control the second auxiliary power supply 204 to charge the third charging sub-unit, so as to convert the voltage output by the second auxiliary power supply 204 into the second output voltage through the discharge of the third charging sub-unit; and to be in a conduction state when the potential information of the midpoint of the step-down bridge arm is a fourth potential, and to control the third charging sub-unit to charge the fourth charging sub-unit, so as to convert the voltage output by the second auxiliary power supply 204 into the second output voltage through the discharge of the fourth charging sub-unit.

[0075] The third potential is, for example, a low level, and the fourth potential is, for example, a high level.

[0076] Figure 4 is a schematic diagram of the first driving unit 2011 in one embodiment, as shown in FIG. Figure 4 As shown, in an exemplary embodiment, optionally, the first driving unit 2011 includes a first transistor 2011a.

[0077] Among them, the second end of the first charging sub-unit 2012a is connected to the emitter (Emitter, E) of the first transistor 2011a, and the second end of the second charging sub-unit 2012b is respectively connected to the base (Base, B) of the first transistor 2011a and the collector (Collector, C) of the first transistor 2011a. The base of the first transistor 2011a is also used to receive the potential information of the midpoint of the boost bridge arm.

[0078] In this embodiment, since the base of the first transistor 2011a can receive the potential information BOOST_SW of the midpoint of the boost bridge arm, when the potential information BOOST_SW of the midpoint of the boost bridge arm is the first potential, the first transistor 2011a is in the cut-off state; when the potential information BOOST_SW of the midpoint of the boost bridge arm is the second potential, the first transistor 2011a is in the on state.

[0079] Since the second end of the first charging sub-unit 2012a is connected to the emitter of the first transistor 2011a, and the second end of the second charging sub-unit 2012b is respectively connected to the base of the first transistor 2011a and the collector of the first transistor 2011a, when the first transistor 2011a is in the cut-off state, the first auxiliary power supply 202 can charge the first charging sub-unit 2012a; when the second transistor is in the on state, the first charging sub-unit 2012a can charge the second charging sub-unit 2012b.

[0080] In the above embodiment, since the first driving unit 2011 includes the first transistor 2011a, the second end of the first charging sub-unit 2012a is connected to the emitter of the first transistor 2011a, and the second end of the second charging sub-unit 2012b is respectively connected to the base of the first transistor 2011a and the collector of the first transistor 2011a, and the base of the first transistor 2011a is also used to receive the potential information of the midpoint of the boost bridge arm, therefore, the first bootstrap unit 2012 can be driven to charge and discharge in response to the potential information of the midpoint of the boost bridge arm through the first transistor 2011a, so as to convert the voltage output by the first auxiliary power supply 202 into the first output voltage.

[0081] In an exemplary embodiment, optionally, the second driving unit includes a second transistor.

[0082] Among them, the second end of the third charging subunit is connected to the emitter of the second transistor, and the second end of the fourth charging subunit is connected to the base of the second transistor and the collector of the second transistor respectively. The base of the second transistor is also used to receive the potential information of the midpoint of the boost bridge arm.

[0083] Figure 5 2 is a schematic diagram of yet another driving circuit in an embodiment. In an exemplary embodiment, optionally, the driving circuit 200 further includes a first detection module 205 and a second detection module 206 .

[0084] The first detection module 205 is disposed at the midpoint of the boost bridge arm, and is configured to determine the potential information of the midpoint of the boost bridge arm and send the potential information of the midpoint of the boost bridge arm to the buck driving module 201. Optionally, the first detection module 205 includes, but is not limited to, a potentiometer or a voltage sensor.

[0085] The second detection module 206 is disposed at the midpoint of the buck bridge arm. The second detection module 206 is configured to determine the potential information of the midpoint of the buck bridge arm and transmit the potential information of the midpoint of the buck bridge arm to the boost driver module 203. Optionally, the second detection module 206 includes, but is not limited to, a potentiometer or a voltage sensor.

[0086] It should be noted that the first detection module 205 and the second detection module 206 may be the same or different.

[0087] In the above embodiment, since the driving circuit 200 also includes a first detection module 205 and a second detection module 206, the first detection module 205 is set at the midpoint of the boost bridge arm, and the second detection module 206 is set at the midpoint of the buck bridge arm. Therefore, the potential information of the midpoint of the boost bridge arm can be efficiently determined through the first detection module 205, and the potential information of the midpoint of the buck bridge arm can be efficiently determined through the second detection module 206, so that accurate voltage conversion can be performed subsequently based on the potential information.

[0088] Figure 6 FIG. 2 is a schematic diagram of another driving circuit in an embodiment. In an exemplary embodiment, optionally, the driving circuit 200 further includes a first driver 207 and a second driver 208 .

[0089] The buck driving module 201 is connected to the first driver 207 , and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm through the first driver 207 .

[0090] The boost driving module 203 is connected to the second driver 208 , and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm through the second driver 208 .

[0091] The first driver 207 and the second driver 208 can be any type of driver, which is not limited in this embodiment. The first driver 207 and the second driver 208 can be the same or different.

[0092] In the above embodiment, the driving circuit 200 also includes a first driver 207 and a second driver 208. Since the buck driving module 201 is connected to the first driver 207, the first output voltage provides a driving voltage for the upper tube of the buck bridge arm through the first driver 207, and the boost driving module 203 is connected to the second driver 208, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm through the second driver 208. Therefore, the floating ground drive of the high-side transistor in the buck-boost circuit 100 is more reliably realized through the first driver 207 and the second driver 208.

[0093] In order to more clearly introduce the driving circuit 200 of the present application, Figure 7 Provide explanation. Figure 7 is a schematic diagram of yet another driving circuit in an embodiment, Figure 7 In FIG, transistor Q5 represents the first transistor 2011a, and transistor Q6 represents the second transistor. Capacitor C1 represents the first charging subunit 2012a, capacitor C2 represents the second charging subunit 2012b, capacitor C3 represents the third charging subunit, and capacitor C4 represents the fourth charging subunit. Bias voltage VANS represents the first auxiliary power supply 202 and the second auxiliary power supply 204.

[0094] Please continue to refer to Figure 7 In an exemplary embodiment, optionally, the buck driver module 201 further includes at least one of the following:

[0095] (1) First diode D1. The anode of first diode D1 is connected to first auxiliary power supply 202, and the cathode of first diode D1 is connected to the first end of first charging subunit 2012a. Optionally, second diode D2 is used to prevent bias voltage VANS from affecting first output voltage VBOOT1.

[0096] (2) A second diode D2. The anode of the second diode D2 is connected to the first end of the first charging subunit 2012a, and the cathode of the second diode D2 is connected to the first end of the second charging subunit 2012b. Optionally, the second diode D2 is used to prevent the second charging subunit 2012b from charging the first charging subunit 2012a.

[0097] (3) A third diode D3. The anode of the third diode D3 is connected to the emitter of the first transistor 2011a, and the cathode of the third diode D3 is connected to the base of the first transistor 2011a. Optionally, the third diode D3 is used to further control the first transistor 2011a to be in the off state when BOOST_SW is at a low level.

[0098] (4) Fourth diode D4. The anode of the fourth diode D4 is connected to the base of the first transistor 2011a, and the cathode of the fourth diode D4 is used to receive the potential information BOOST_SW of the midpoint of the boost bridge arm. The fourth diode D4 is used to block the influence of the second potential.

[0099] In the above embodiment, since the buck driving module 201 further includes at least one of the first diode, the second diode, the third diode and the fourth diode, the working stability and reliability of the buck driving module 201 can be further improved by the above diodes.

[0100] In an exemplary embodiment, optionally, the boost drive module 203 further includes at least one of the following: (1) a fifth diode D5, wherein the anode of the fifth diode D5 is connected to the first auxiliary power supply 202, and the cathode of the fifth diode D5 is connected to the first end of the third charging subunit. (2) a sixth diode D6, wherein the anode of the sixth diode D6 is connected to the first end of the third charging subunit, and the cathode of the sixth diode D6 is connected to the first end of the fourth charging subunit. (3) a seventh diode D7, wherein the anode of the seventh diode D7 is connected to the emitter of the second transistor, and the cathode of the seventh diode D7 is connected to the base of the second transistor. (4) an eighth diode D8, wherein the anode of the eighth diode D8 is connected to the base of the second transistor, and the cathode of the eighth diode D8 is used to receive the potential information of the midpoint of the step-down bridge arm.

[0101] Please continue to refer to Figure 7 In an exemplary embodiment, optionally, the buck driving module 201 further includes at least one of a first resistor R1 and a second resistor R2.

[0102] The first resistor R1 is provided between the first auxiliary power source 202 and the first end of the first charging subunit 2012a and can serve as a current limiting resistor.

[0103] The second resistor R2 is disposed between the base of the first transistor 2011a and the second end of the second charging subunit 2012b and can serve as a base bias resistor for the first transistor 2011a.

[0104] In the above embodiment, since the first resistor is arranged between the first auxiliary power supply 202 and the first end of the first charging sub-unit 2012a; the second resistor is arranged between the base of the first transistor 2011a and the second end of the second charging sub-unit 2012b, the working stability and reliability of the buck driving module 201 can be further improved by at least one of the first resistor and the second resistor.

[0105] In an exemplary embodiment, the boost driver module 203 optionally further includes at least one of a third resistor R3 and a fourth resistor R4. The third resistor R3 is disposed between the second auxiliary power source 204 and the first terminal of the third charging subunit. The fourth resistor R4 is disposed between the base of the second transistor and the second terminal of the fourth charging subunit.

[0106] Please continue to refer to Figure 7 The following describes the buck driving process. When the input voltage VIN of the buck-boost circuit is greater than the output voltage VOUT, the buck-boost circuit is in buck mode. Transistors Q3 and Q4 are complementary and turned on.

[0107] If transistor Q3 is off and transistor Q4 is on, BOOST_SW is low. When BOOST_SW is low, the bias voltage VBIAS charges capacitor C1 through the first resistor R1, the first diode D1, the third diode D3, and the fourth diode D4. Due to the presence of the third diode D3, the BE junction of transistor Q5 is reverse biased, turning transistor Q5 off. At this point, the voltage across the second resistor R2 is approximately equal to the voltage at the BUCK_SW node. Thus, after charging capacitor C1, the discharge of capacitor C1 raises VBOOT1.

[0108] If transistor Q3 is on and transistor Q4 is off, BOOST_SW is at a high level. When BOOST_SW is high, the fourth diode D4 blocks the effects of the high level. The voltage across capacitor C1 causes transistor Q5 to turn on, charging capacitor C2 via the second diode D2 and transistor Q5. The discharge of capacitor C2 raises VBOOT1. The presence of the second diode D2 prevents capacitor C2 from discharging into capacitor C1.

[0109] In this way, after continuous BOOST_SW switching cycles, a stable VBOOT1 can be obtained to provide a driving voltage for transistor Q3.

[0110] Please continue to refer to Figure 7 The following describes the boost driving process. When the input voltage VIN of the buck-boost circuit is lower than the output voltage VOUT, the buck-boost circuit is in boost mode, and transistors Q1 and Q2 are complementary and turned on.

[0111] If transistor Q3 is off and transistor Q4 is on, BUCK_SW is at a low level. When BUCK_SW is low, the bias voltage VBIAS charges capacitor C3 via the third resistor R3, the sixth diode D6, the seventh diode D7, and the eighth diode D8. Due to the presence of the seventh diode D7, the BE junction of transistor Q6 is reverse biased, turning transistor Q6 off. At this point, the voltage across the fourth resistor R4 is approximately equal to the voltage at the BOOT_SW node. Thus, after charging capacitor C3, the discharge of capacitor C3 raises VBOOT2.

[0112] If transistor Q3 is on and transistor Q4 is off, BUCK_SW is at a high level. When BUCK_SW is high, diode D8 blocks the effects of the high level. The voltage across capacitor C3 turns on transistor Q6, which in turn charges capacitor C4 via diode D6 and transistor Q5. The discharge of capacitor C4 raises VBOOT2. Diode D6 prevents capacitor C2 from discharging into capacitor C1.

[0113] In this way, after continuous BUCK_SW switching cycles, a stable VBOO2 can be obtained to provide a driving voltage for transistor Q1.

[0114] Figure 8 FIG. 1 is a schematic diagram of another driving circuit in an embodiment, Figure 8 As shown, driver U1 represents the first driver, and driver U2 represents the second driver. In driver U1 and driver U2, VCC is used to receive the driver's working power supply VANS, and GND is the ground terminal.

[0115] In driver U1, HIN is used to receive the drive signal Boost_PWM_H that controls transistor Q1, LIN is used to receive the drive signal Boost_PWM_L that controls transistor Q2, HO is used to control transistor Q3, LO is used to control transistor Q4, VA is used to receive VBOOT1 to provide a drive voltage for transistor Q3, and VS is used to connect the midpoint of the buck bridge arm.

[0116] In driver U2, HIN is used to receive the drive signal Buck_PWM_H that controls transistor Q3, LIN is used to receive the drive signal Buck_PWM_L that controls transistor Q4, HO is used to control transistor Q1, LO is used to control transistor Q2, VA is used to receive VBOOT2 to provide a drive voltage for transistor Q1, and VS is used to connect the midpoint of the boost bridge arm.

[0117] Figure 9Schematic diagram of an energy storage power supply in an embodiment. In one embodiment, an energy storage power supply 900 is further provided. The energy storage power supply 900 includes a buck-boost circuit 100 and any one of the above drive circuits 200.

[0118] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. In particular, any reference to memory, database, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The databases involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the various embodiments provided herein may be, but are not limited to, general-purpose processors, central processing units (CPUs), graphics processing units (GPUs), digital signal processors (DSPs), programmable logic devices (PLDs), quantum computing-based data processing logic devices, artificial intelligence (AI) processors, and the like.

[0119] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0120] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A driving circuit for a buck-boost circuit, wherein: The buck-boost circuit includes a boost bridge arm and a buck bridge arm, and is characterized in that the drive circuit includes a buck drive module and a boost drive module with the same structure; the buck drive module is respectively connected to the first auxiliary power supply and the midpoint of the boost bridge arm, and the boost drive module is respectively connected to the second auxiliary power supply and the midpoint of the buck bridge arm; The buck driving module converts the voltage output by the first auxiliary power supply into a first output voltage in response to the potential information of the midpoint of the boost bridge arm, and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm; The boost driving module converts the voltage output by the second auxiliary power supply into a second output voltage in response to the potential information of the midpoint of the buck bridge arm, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm; In which, the buck drive module includes a first drive unit and a first bootstrap unit connected to each other; the first bootstrap unit is connected to the first auxiliary power supply; the first bootstrap unit includes a first charging subunit and a second charging subunit; the first end of the first charging subunit is connected to the first auxiliary power supply, the first end of the second charging subunit is connected to the first end of the first charging subunit, and the second end of the second charging subunit is connected to the second end of the first charging subunit through the first drive unit; the first drive unit includes a first transistor, the second end of the first charging subunit is connected to the emitter of the first transistor, the second end of the second charging subunit is respectively connected to the base of the first transistor and the collector of the first transistor, and the base of the first transistor is also used to receive the potential information of the midpoint of the boost bridge arm.

2. The driving circuit according to claim 1, wherein: The first driving unit drives the first bootstrap unit to charge and discharge in response to the potential information of the midpoint of the boost bridge arm, so as to convert the voltage output by the first auxiliary power supply into the first output voltage.

3. The driving circuit according to claim 2, wherein: The first driving unit is configured to be in a cut-off state when the potential information of the midpoint of the boost bridge arm is a first potential, and to control the first auxiliary power supply to charge the first charging sub-unit, so as to convert the voltage output by the first auxiliary power supply into the first output voltage through the discharge of the first charging sub-unit; and to be in a conduction state when the potential information of the midpoint of the boost bridge arm is a second potential, and to control the first charging sub-unit to charge the second charging sub-unit, so as to convert the voltage output by the first auxiliary power supply into the first output voltage through the discharge of the second charging sub-unit.

4. The driving circuit according to any one of claims 1 to 3, characterized in that: The step-down driver module further includes at least one of the following: a first diode, wherein an anode of the first diode is connected to the first auxiliary power supply, and a cathode of the first diode is connected to a first end of the first charging subunit; a second diode, wherein an anode of the second diode is connected to the first end of the first charging subunit, and a cathode of the second diode is connected to the first end of the second charging subunit; a third diode, wherein an anode of the third diode is connected to the emitter of the first transistor, and a cathode of the third diode is connected to the base of the first transistor; A fourth diode, wherein the anode of the fourth diode is connected to the base of the first transistor, and the cathode of the fourth diode is used to receive the potential information of the midpoint of the boost bridge arm.

5. The driving circuit according to any one of claims 1 to 3, characterized in that: The buck driving module further includes at least one of a first resistor and a second resistor: The first resistor is provided between the first auxiliary power source and the first end of the first charging subunit; The second resistor is arranged between the base of the first transistor and the second end of the second charging subunit.

6. The driving circuit according to any one of claims 1 to 3, characterized in that: The driving circuit further includes a first detection module and a second detection module; the first detection module is arranged at the midpoint of the boost bridge arm, and the second detection module is arranged at the midpoint of the buck bridge arm; The first detection module is used to determine the potential information of the midpoint of the boost bridge arm and send the potential information of the midpoint of the boost bridge arm to the buck driving module; The second detection module is used to determine the potential information of the midpoint of the buck bridge arm and send the potential information of the midpoint of the buck bridge arm to the boost driving module.

7. The driving circuit according to any one of claims 1 to 3, characterized in that: The driving circuit further includes a first driver and a second driver; The buck driving module is connected to the first driver, and the first output voltage provides a driving voltage for the upper tube of the buck bridge arm through the first driver; The boost driving module is connected to the second driver, and the second output voltage provides a driving voltage for the upper tube of the boost bridge arm through the second driver.

8. The driving circuit according to any one of claims 1 to 3, characterized in that: The boost driving module and the buck driving module are symmetrically arranged in structure.

9. The driving circuit according to any one of claims 1 to 3, characterized in that: The boost drive module includes a second drive unit and a second bootstrap unit connected to each other; the second bootstrap unit is connected to the second auxiliary power supply; the second bootstrap unit includes a third charging subunit and a fourth charging subunit; the first end of the third charging subunit is connected to the second auxiliary power supply, the first end of the fourth charging subunit is connected to the first end of the third charging subunit, and the second end of the fourth charging subunit is connected to the second end of the third charging subunit through the second drive unit; the second drive unit includes a second transistor; the second end of the third charging subunit is connected to the emitter of the second transistor, and the second end of the fourth charging subunit is connected to the base of the second transistor and the collector of the second transistor respectively, and the base of the second transistor is also used to receive the potential information of the midpoint of the step-down bridge arm.

10. An energy storage power supply, characterized in that: The energy storage power supply includes a buck-boost circuit and a drive circuit according to any one of claims 1 to 9.

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