Heating assembly for semiconductor heat treatment

Abstract

The invention discloses a heating assembly for semiconductor heat treatment, which comprises a cover plate, a bottom plate and a heating mechanism, and the heating mechanism is arranged between the cover plate and the bottom plate and comprises a first mica sheet, a second mica sheet and a third mica sheet; the third mica sheet is arranged between the first mica sheet and the second mica sheet and comprises a first inner mica sheet and a first outer mica sheet; the inner peripheral edge part of the first outer mica sheet is clamped and combined with the outer peripheral edge part of the first inner mica sheet; resistance wires are wound on the first inner mica sheet and the first outer mica sheet in a staggered manner, and the distribution densities of the resistance wires on the surfaces of the first inner mica sheet and the first outer mica sheet are the same. By adopting the design, the heating assembly for semiconductor heat treatment can emit heat more uniformly, and the service life of the heating assembly is effectively prolonged.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and in particular to a heating component for semiconductor heat treatment. Background Art

[0002] In the current semiconductor manufacturing process, heat treatment is involved in many processes such as oxidation, passivation, and etching, so heating devices are indispensable in most semiconductor processing equipment. Among them, the most widely used heating device for semiconductor processing is to use the metal resistance characteristics to achieve electrical heating.

[0003] Generally speaking, for heating devices for semiconductor processing based on resistance heating, their working efficiency is directly related to the winding method and structure of the resistance wire. The resistance wire structure includes flat metal strips, cylindrical metal wires and metal hollow tubes, etc. Common winding methods of metal resistance materials include spiral, parallel arrangement, ring or concentric circle, etc. These methods each have different advantages, but in actual applications, due to the characteristics of the winding structure, the heating device, especially the planar heating device, will heat unevenly, which will not only affect the heat treatment of the semiconductor, but also make the heating device itself easy to damage. Summary of the invention

[0004] The main purpose of the present application is to provide a heating component for semiconductor thermal treatment to solve the problems existing in the prior art.

[0005] To achieve the above objectives, this application provides the following technical solutions.

[0006] Some embodiments of the present application provide a heating component for semiconductor heat treatment, which includes a cover plate, a base plate and a heating mechanism; the heating mechanism is arranged between the cover plate and the base plate, and includes a first mica sheet, a second mica sheet and a third mica sheet; the third mica sheet includes a first inner mica sheet and a first outer mica sheet; the first outer mica sheet is arranged around the first inner mica sheet, and the inner peripheral edge of the first outer mica sheet is snap-connected with the outer peripheral edge of the first inner mica sheet; the first inner mica sheet and the first outer mica sheet are both staggered with resistance wires, and the distribution density of the resistance wires on the surfaces of the first inner mica sheet and the first outer mica sheet is the same.

[0007] In the above embodiments of the present application, the third mica sheet, i.e., the mica sheet carrying the resistance wire, is arranged as a first inner mica sheet and a first outer mica sheet which can be split radially, and the resistance wire is wound around the first inner mica sheet and the first outer mica sheet respectively, and the distribution density of the resistance wire on the first inner mica sheet and the first outer mica sheet is made the same, so that when the heating component is working normally, the heat obtained per unit area by the first inner mica sheet and the first outer mica sheet in the same period of time is the same or basically the same, thereby effectively ensuring that the heat distribution on the heating surface of the entire heating component is uniform, achieving the effect of uniform heating, and at the same time reducing the risk of the third mica sheet cracking due to internal stress due to uneven heating.

[0008] In one embodiment, the bending points of the resistance wire distributed on the outside of the first inner mica sheet and the bending points of the resistance wire distributed on the outside of the first outer mica sheet are staggered to further make the temperature distribution of the heating mechanism more uniform and increase the service life of the third mica sheet.

[0009] In one embodiment, the resistance wire is located on the radial inner side of the first outer mica sheet and is wound around the bending point to penetrate the first inner mica sheet, and the resistance wire is located on the radial outer side of the first outer mica sheet and is wound around to form an extension section. Such a setting can increase the winding amount of the resistance wire on the radial outer side of the circular first outer mica sheet, thereby increasing the temperature of the outer ring of the circular first outer mica sheet, making the overall temperature of the first inner mica sheet and the circular first outer mica sheet more uniform.

[0010] In one embodiment, the first inner mica sheet and the first outer mica sheet are both in a ring shape.

[0011] In one embodiment, the inner peripheral edge of the first outer mica sheet is tightly fitted with the outer peripheral edge of the first inner mica sheet to ensure a thermal connection between the two and obtain a more uniform heating effect.

[0012] In one embodiment, the cover plate is provided with an air-permeable tube and an inner sleeve, wherein a driving mechanism for driving the semiconductor carrier to rotate is installed inside the inner sleeve, and the bottom plate is provided with a first through hole matching the air-permeable tube and a second through hole matching the inner sleeve.

[0013] In one embodiment, a plurality of anti-collision plates are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate.

[0014] In one embodiment, the cover plate is provided with a plurality of groups of fixing columns for connecting with the bottom plate.

[0015] In one embodiment, a temperature control switch and a temperature monitoring device are connected to the bottom of the base plate, and the temperature monitoring device is used to monitor the temperature in the working space where the heating component is located.

[0016] In one embodiment, two groups of ceramic sleeves are provided at the bottom of the base plate, and metal sleeves are movably installed inside the two groups of ceramic sleeves by setting limiting steps, and a high-temperature resistant protective sleeve is provided on the metal sleeve, and the high-temperature resistant protective sleeve is provided between the metal sleeve and the ceramic sleeve, and an outer convex ring for engaging the limiting step is provided on the outside of the metal sleeve. The high-temperature resistant protective sleeve can be made of materials such as carbon fiber composite materials. By setting the high-temperature resistant protective sleeve, it can not only resist high temperatures but also avoid friction between the metal sleeve and the ceramic sleeve, thereby extending the service life of the components.

[0017] In one embodiment, both ends of the resistance wire extend through the interior of two groups of metal sleeves respectively, and the interior of the two groups of metal sleeves are respectively provided with an output power line and an input power line, and a conductive core is provided inside the power line, and the conductive core, the resistance wire and the metal sleeve are fixed by a pressure welding process.

[0018] Some embodiments of the present invention provide a heating component for semiconductor heat treatment, which includes a cover plate, a base plate and a heating mechanism; the heating mechanism is arranged between the cover plate and the base plate, and includes a first mica sheet, a second mica sheet and a third mica sheet; the third mica sheet includes a first inner mica sheet, a second inner mica sheet and a second outer mica sheet, the inner peripheral edge portion and the outer peripheral edge portion of the second inner mica sheet are respectively snap-connected with the outer peripheral edge portion of the first inner mica sheet and the inner peripheral edge portion of the second outer mica sheet, the first inner mica sheet and the second inner mica sheet are both alternately wound with resistance wires, and the distribution density of the resistance wires on the surfaces of the first inner mica sheet and the second inner mica sheet is the same, a plurality of resistance wire spiral winding structures are evenly distributed on the second outer mica sheet, and the resistance wire spiral winding structures are formed by winding resistance wires.

[0019] In the above embodiments of the present application, resistance wires with uniform density distribution are staggeredly wound on the outside of the first inner mica sheet and the second inner mica sheet, and multiple resistance wire spiral winding structures are evenly distributed on the second outer mica sheet, so that the overall temperature distribution of the third mica sheet is more uniform. The resistance wire spiral winding structure can make up for the problem of insufficient temperature of the outer peripheral edge of the second inner mica sheet, and the resistance wire spiral winding structure is wound on the outside of the air tube. The resistance wire spiral winding structure can be used to heat the air tube to preheat the gas flowing through the air tube, thereby preventing the gas temperature from being too low and causing deformation or damage to the semiconductor when it comes into contact with the semiconductor, and the preheated gas can also better transfer heat to the semiconductor.

[0020] In one embodiment, when the heating mechanism is working normally, the heat generated per unit area by the resistance wires on the first inner mica sheet, the second inner mica sheet, and the second outer mica sheet is the same. In this way, the overall temperature distribution of the heating mechanism can be uniform, and the heat transferred by the heating mechanism can be uniformly transferred to the semiconductor. The uniform heating of the semiconductor can eliminate internal stress and improve the quality of the product.

[0021] In one embodiment, the inner peripheral edge of the second inner mica sheet is closely fitted with the outer peripheral edge of the first inner mica sheet, and the inner peripheral edge of the second outer mica sheet is closely fitted with the outer peripheral edge of the second inner mica sheet. In this way, the risk of damage to the first inner mica sheet, the second inner mica sheet and the second outer mica sheet can be reduced. If the third mica sheet composed of the first inner mica sheet, the second inner mica sheet and the second outer mica sheet is made of a whole mica sheet, the third mica sheet may have internal stress due to uneven heating when receiving heat conduction from the resistance wire. The internal stress can easily cause damage to the mica sheet material and affect the heat conduction efficiency.

[0022] In one embodiment, the bending points of the resistance wires distributed on the outside of the first inner mica sheet and the bending points of the resistance wires distributed on the outside of the second inner mica sheet are staggered. In this way, the temperature of the inner peripheral portion and the outer peripheral portion of the first inner mica sheet can be made consistent. When the resistance wires are interlaced and wound in the first inner mica sheet, the inner edge temperature of the first inner mica sheet is higher than the outer edge temperature because the resistance wires are densely distributed in the inner peripheral portion of the first inner mica sheet and sparsely distributed in the outer peripheral portion of the first inner mica sheet. Then, the bending points of the resistance wires on the outside of the first inner mica sheet and the bending points of the resistance wires distributed on the outside of the second inner mica sheet are staggered, so that the relatively high temperature of the inner peripheral portion of the second inner mica sheet compensates for the insufficient temperature of the outer peripheral portion of the first inner mica sheet, and the insufficient temperature of the outer peripheral portion of the second inner mica sheet is compensated by the set spiral winding structure of the resistance wire, and the spiral winding structure of the resistance wire can preheat the air permeable tube.

[0023] In one embodiment, the first inner mica sheet is in a circular ring shape, the second inner mica sheet is in a ring shape and has a plurality of isosceles trapezoidal extensions evenly distributed circumferentially on the outer peripheral edge portion, the isosceles trapezoidal extensions extend radially outward and are snap-fitted with a plurality of isosceles trapezoidal grooves arranged on the inner peripheral edge portion of the second outer mica sheet.

[0024] In one embodiment, the cover plate is provided with a vent tube and an inner sleeve, and the vent tubes are in multiple groups and evenly distributed. A driving mechanism for driving the semiconductor carrier to rotate is installed inside the inner sleeve. The bottom plate is provided with a first through hole matching the vent tube and a second through hole matching the inner sleeve.

[0025] In one embodiment, a plurality of anti-collision plates are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate.

[0026] In one embodiment, the cover plate is provided with a plurality of groups of fixing columns for connecting with the bottom plate.

[0027] In one embodiment, a temperature control switch and a temperature monitoring device are connected to the bottom of the base plate, and the temperature monitoring device is used to monitor the heating temperature of the heating component.

[0028] In one embodiment, the air tube axially penetrates the second outer mica sheet, the resistance wire is located outside the multiple groups of air tubes and is spirally wound, and the outside of the multiple groups of air tubes are all provided with a spiral groove for engaging the resistance wire.

[0029] In one embodiment, two groups of ceramic sleeves are provided at the bottom of the base plate, and metal sleeves are movably installed inside the two groups of ceramic sleeves by setting limiting steps, and a high-temperature resistant protective sleeve is provided on the metal sleeve, and the high-temperature resistant protective sleeve is arranged between the metal sleeve and the ceramic sleeve, and an outer convex ring for engaging the limiting step is provided on the outside of the metal sleeve, and the two ends of the resistance wire respectively extend through and extend into the interior of the two groups of metal sleeves, and the interior of the two groups of metal sleeves are respectively provided with an output power line and an input power line, and the conductive core inside the power line is fixedly combined with the resistance wire and the metal sleeve by a pressure welding process.

[0030] Compared with the prior art, the heating component for semiconductor heat treatment provided by the present application can achieve a more uniform heating effect, thereby improving the quality of semiconductor processing, and has better working stability and longer service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic diagram of the overall structure of a heating component in Example 1 of the present application; Figure 2 This is a schematic diagram of the distribution of a base plate, a temperature control switch, a thermal resistor and a ceramic sheath in Example 1 of the present application; Figure 3 This is a schematic diagram of the installation of a cover plate, a vent pipe, an inner sleeve, an anti-collision sheet and a fixing column in Example 1 of the present application; Figure 4 This is an exploded diagram of a heating mechanism in Example 1 of the present application; Figure 5 This is a schematic diagram of the distribution of a first mica sheet and power lines in Example 1 of the present application; Figure 6 This is a schematic diagram of a winding structure of a first inner mica sheet, a first outer mica sheet and a resistance wire in Example 1 of the present application; Figure 7This is a top view of the installation of a first inner mica sheet and a first outer mica sheet in Example 1 of the present application; Figure 8 for Figure 5 The enlarged view of point A in the middle; Fig. 9 This is a schematic diagram of the installation of a power cord, a ceramic sheath and a base plate in Example 1 of the present application; Fig.10 for Fig. 9 The enlarged view of point B in the middle; Fig.11 This is a schematic diagram of the installation of a first inner mica sheet, a first outer mica sheet and a resistance wire in Example 2 of the present application; Fig.12 This is a schematic diagram of the distribution of a resistance wire located on both sides of the first inner mica sheet and the first outer mica sheet in Example 2 of the present application; Fig.13 This is a schematic diagram of the overall structure of a heating component in Example 3 of the present application; Fig.14 This is a schematic diagram of the installation of a cover plate, multiple groups of air permeable tubes and an inner sleeve in Example 3 of the present application; Fig.15 This is a schematic diagram of the installation of a base plate, a boss and a fixing column in the third embodiment of the present application; Fig.16 This is an exploded view of a heating component in Example 3 of the present application; Fig.17 This is a schematic diagram of the distribution of a second mica sheet and a second limiting ring in Example 3 of the present application; Fig.18 This is a schematic diagram of the distribution of a first mica sheet and a first limiting ring in Example 3 of the present application; Fig.19 This is a schematic diagram of the distribution of a cover plate, a first inner mica sheet, a second inner mica sheet, a second outer mica sheet and a resistance wire in Example 3 of the present application; Fig. 20 This is a schematic diagram of the distribution of a first inner mica sheet, a second inner mica sheet, a second outer mica sheet and a resistance wire in Example 3 of the present application; Fig.21 This is a schematic diagram of the distribution of resistance wires in the third embodiment of the present application; Fig. 22 This is a schematic diagram of the distribution of temperature test points V1, V2, V3, V4, V5 and V6 in Example 1 of the present application; Fig.23 This is a temperature curve diagram of thermal uniformity at different positions in Example 1 of the present application.

[0032] Description of the reference numerals: 1, cover plate; 2, air vent; 3, inner sleeve; 4, anti-collision sheet; 5, fixing column; 6, bottom plate; 7, first through hole; 8, second through hole; 9, temperature control switch; 10, thermal resistor; 11, ceramic sheath; 12, power cord; 13, conductive core; 14, heating mechanism; 1401, first mica sheet; 1402, second mica sheet; 1403, first inner mica sheet; 1404, first An outer mica sheet; 1405, a resistance wire; 1406, a first limiting ring; 1407, a second limiting ring; 1408, a second inner mica sheet; 1409, a second outer mica sheet; 15, a metal sleeve; 16, an outer convex ring; 17, a high temperature resistant protective sleeve; 18, a limiting step; 19, a fixing hole; 20, a long bolt; 21, a first limiting ring; 22, a second limiting ring; 23, a boss; 24, an extension section. DETAILED DESCRIPTION

[0033] In the prior art, the heating device used in the semiconductor heat treatment process usually uses a mica sheet with a resistance wire wound on the surface as the main heating element. However, for mica sheets with large sheet diameters, there are many hidden dangers in winding resistance wires on them to form a heating mechanism. Taking a circular ring-shaped mica sheet with a large sheet diameter and a small inner diameter as an example, the resistance wires are more densely distributed near the inner ring area of ​​the mica sheet, while the resistance wires are more sparsely distributed near the outer peripheral area of ​​the mica sheet. Therefore, when the heating element is working, the heat per unit area near the inner ring area of ​​the mica sheet is often significantly higher than the heat per unit area near the outer peripheral area of ​​the mica sheet, resulting in a large difference in the heating rate and temperature on the heating surface of the heating element, which in turn causes the semiconductor as the heating object to be heated unevenly, resulting in deformation, breakage and other problems. At the same time, since the mica sheet is an integral structure, the temperature difference between its inner ring area and the outer peripheral area is large, which will cause a large internal stress inside it, making it easy to break, and seriously shortening its service life.

[0034] In view of the above-mentioned defects in the prior art, the applicant has proposed the technical solution of the present application after long-term research and practice. The technical solution of the present application will be clearly and completely described below in combination with several embodiments and drawings. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0035] The following describes the embodiments of the present application based on its overall structure.

[0036] Embodiment 1: See also Figure 1 - Fig.10A heating assembly for semiconductor heat treatment provided in this embodiment includes a cover plate 1, a bottom plate 6 and a heating mechanism 14, and the heating mechanism 14 is arranged in a space mainly enclosed by the cover plate 1 and the bottom plate 6. The cover plate 1 and the bottom plate 6 can be made of metal materials. The heating mechanism 14 includes a first mica sheet 1401, a second mica sheet 1402 and a third mica sheet. The third mica sheet includes a first inner mica sheet 1403 and a first outer mica sheet 1404, and the first inner mica sheet and the first outer mica sheet can both be annular. The second mica sheet 1402 and the first mica sheet 1401 can play the role of insulation and heat conduction. The outer peripheral edge of the first inner mica sheet 1403 is provided with a plurality of clamping blocks along the circumferential direction, and the inner peripheral edge of the first outer mica sheet 1404 is provided with a plurality of clamping slots along the circumferential direction. By making each clamping block tightly engage with a corresponding clamping slot, the first inner mica sheet 1403 and the first outer mica sheet 1404 can be tightly combined in the radial direction, which can ensure the stable installation of the first inner mica sheet 1403 and the first outer mica sheet 1404 on the one hand, and can reduce the internal stress of the third mica sheet when heated on the other hand, and prevent the third mica sheet from being damaged due to different internal stress caused by uneven temperature distribution when the whole mica sheet is used to make the third mica sheet. At the same time, the first inner mica sheet 1403 and the first outer mica sheet 1404 are both interlaced with resistance wires 1405, and the distribution density of the resistance wires 1405 on the surfaces of the first inner mica sheet 1403 and the first outer mica sheet 1404 is the same. By winding the resistance wire 1405 on the first inner mica sheet 1403 and the first outer mica sheet 1404 respectively to form a heating mica layer for generating heat, the resistance wire 1405 can be more evenly distributed on the third mica sheet, thereby reducing or avoiding the problem of large difference in distribution density of the resistance wire 1405 in the inner ring area and the outer peripheral area of ​​the third mica sheet, thereby ensuring uniform heat distribution on the heating surface of the entire heating component and achieving a uniform heating effect. At the same time, it can also reduce the risk of the third mica sheet cracking due to internal stress due to uneven heating in different radial areas.

[0037] Furthermore, the bending points of the resistance wire 1405 distributed on the outside of the first inner mica sheet 1403 and the bending points of the resistance wire 1405 distributed on the outside of the first outer mica sheet 1404 are staggered. The first inner mica sheet 1403 and the first outer mica sheet 1404 are arranged to be snap-connected, and then the resistance wire 1405 is used to staggeredly wind the two at the same time. When winding, the bending points of the resistance wire 1405 on the radial outer edge of the first inner mica sheet 1403 and the bending points of the resistance wire 1405 on the radial inner edge of the first outer mica sheet 1404 are also staggered. This can not only make the overall temperature distribution of the heating mechanism 14 more uniform, but also eliminate the internal stress of the third mica sheet by making the temperature distribution more uniform, thereby effectively extending the service life of the third mica sheet.

[0038] Please see again Figure 2 and Figure 3The top surface of the cover plate 1 is a heating working surface, and the bottom surface is provided with a vent pipe 2 and an inner sleeve 3. The inner sleeve 3 can be provided at the center of the bottom surface of the cover plate 1, and the vent pipe 2 is provided away from the center of the bottom surface of the cover plate 1. The bottom surface of the cover plate 1 is arranged opposite to the top surface of the bottom plate 6. The bottom plate 6 is provided with a first through hole 7 and a second through hole 8. The first through hole 7 can allow the vent pipe 2 to pass through, and the second through hole 8 can allow the inner sleeve 3 to pass through. The vent pipe 2 and the inner sleeve 3 can be respectively formed by metal rings welded to the bottom surface of the cover plate 1.

[0039] Obviously, the cover plate 1 is also provided with a through-hole structure which is respectively connected with the air pipe 2 and the inner sleeve 3, so that the air introduction device connected with the air pipe 2 can convey the gas which can participate in the heat treatment to the top of the heating component, such as; the air introduction device conveys nitrogen, argon, hydrogen or other working gas to the space above the heating component through the air pipe 2. The use of the working gas can not only make the heat be quickly transferred to the wafer, but also can isolate and protect the heat treatment of the wafer. A driving mechanism will be installed in the space where the bottom of the heating component is located, and the output shaft of the driving mechanism passes through the inner sleeve to the top of the heating component. A supporting table for placing a wafer carrier is installed on the top of the output shaft of the driving mechanism, so that the heating of the wafer is carried out above the heating component, and the driving mechanism drives the wafer carrier to rotate so as to fully contact with the inert gas for heat conduction.

[0040] At the same time, a plurality of anti-collision sheets 4 are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate 1 to protect the heating component. In addition, a plurality of fixing columns 5 for connecting with the bottom plate 6 can be arranged on the bottom surface of the cover plate 1. By screwing the fixing columns 5, the assembly of the cover plate 1 and the bottom plate 6 can be realized quickly and easily.

[0041] In addition, a temperature control switch 9 and a temperature monitoring device are provided on the bottom surface of the bottom plate 6. The temperature monitoring device can be a thermal resistor 10 or a temperature sensor. The temperature control switch can be connected in series to the power supply circuit of the heating component to perform safety control to prevent problems such as overheating and overloading. The temperature monitoring device can be connected to the control module of the heating component to perform real-time temperature measurement and control the heating temperature change.

[0042] Please see again Figure 2 , Figure 5 , Figure 8-10Two groups of ceramic sleeves 11 can be arranged on the bottom surface of the bottom plate 6, and the metal sleeves 15 are movably installed inside the two groups of ceramic sleeves 11 by setting limiting steps 18. The outside of the metal sleeve 15 is provided with a high-temperature resistant protective sleeve 17, which is used to prevent the metal sleeve 15 and the ceramic sleeve 11 from rubbing against each other, and the outside of the metal sleeve 15 is provided with an outer convex ring 16 for engaging the limiting step 18. By arranging another layer of high-temperature resistant protective sleeve 17 on the outside of the metal sleeve 15, such as the high-temperature resistant protective sleeve 17 of carbon fiber composite material, it can be resistant to high temperature and avoid mutual friction between the metal sleeve 15 and the ceramic sleeve 11, thereby extending the service life of the components.

[0043] Please see again Figure 8-10 The two ends of the resistance wire 1405 extend through the interior of the two groups of metal sleeves 15 respectively, and the output power line 12 and the input power line 12 are respectively arranged inside the two groups of metal sleeves 15, and the power line 12 is arranged inside a conductive core 13, and the conductive core 13, the resistance wire 1405 and the metal sleeve 15 are fixed by a pressure welding process. By setting the metal sleeve 15 to fix the resistance wire 1405 and the conductive core 13 by pressure welding, the connection between the resistance wire 1405 and the conductive core 13 is more firmly established.

[0044] When the heating component of this embodiment is working, the current is transferred to the resistance wire 1405 through the conductive core 13 of the power cord 12 to form a path. When the current passes through the resistance wire 1405, the resistance wire 1405 converts electrical energy into heat energy, so that the temperature of the first inner mica sheet 1403 and the first outer mica sheet 1404 begins to rise, and the temperature of the first inner mica sheet 1403 and the first outer mica sheet 1404 is transferred to the first mica sheet 1401 and the second mica sheet 1402. The first mica sheet 1401 and the second mica sheet 1402 insulate the current while conducting heat. The first mica sheet 1401 is attached to the bottom plate 6, and then the heat of the first mica sheet 1401 is transferred to the bottom plate 6, and the second mica sheet 1402 is attached to the cover plate 6. 1, and then the heat of the second mica sheet 1402 is transferred to the cover plate 1, the temperature control switch 9 at the bottom of the bottom plate 6 is used to monitor the temperature of the bottom plate 6 to prevent the bottom plate 6 from being too high and overloaded. When the temperature of the bottom plate 6 is too high, the temperature control switch 9 can cut off the power line 12, and the thermal resistor 10 can measure the temperature change in real time to facilitate the device control circuit to adjust the power to control the temperature change. Since the temperatures of the first inner mica sheet 1403 and the first outer mica sheet 1404 are respectively transferred to the first mica sheet 1401 and the second mica sheet 1402, the temperatures of the cover plate 1 and the bottom plate 6 are almost the same. By detecting and understanding the temperature of the bottom plate 6, the temperature of the cover plate 1 can be indirectly controlled. The cover plate 1 is used for heating semiconductors, such as semiconductor wafers.

[0045] Embodiment 2: See also Fig.11 - Fig.12 The semiconductor heat treatment heating component provided in this embodiment is basically the same as the first embodiment, wherein the resistance wire 1405 is located on the radial inner side of the first outer mica sheet 1404 and is wound around the bending point and passes through the first inner mica sheet 1403, and the resistance wire 1405 is located on the radial outer side of the first outer mica sheet 1404 and is wound around to form an extension section 24. By passing the resistance wire 1405 through the radial inner bending point of the first outer mica sheet 1404 to the first inner mica sheet 1403, the winding of the resistance wire 1405 can make the first inner mica sheet 1403 and the first outer mica sheet 1404 more firmly engaged and connected. The resistance wire 1405 is located on the radially outer side of the first outer mica sheet 1404 and is wound around an extension section 24. The setting of the extension section 24 can increase the winding amount of the resistance wire 1405 on the radially outer side of the first outer mica sheet 1404, thereby increasing the temperature of the outer ring of the first outer mica sheet 1404. When the outer ring temperature and the inner ring temperature of the first outer mica sheet 1404 are also consistent, the temperature distribution of the first outer mica sheet 1404 is more uniform, which effectively extends the service life of the first outer mica sheet 1404 and makes the overall temperature of the first inner mica sheet 1403 and the first outer mica sheet 1404 more uniform.

[0046] In this embodiment, the winding method of the resistance wire 1405 is further optimized. The resistance wire 1405 is wound in an interlaced manner outside the first inner mica sheet 1403 and the first outer mica sheet 1404, and the winding bending points are staggered. When the resistance wire 1405 is wound on the radial outer side of the first outer mica sheet 1404, an extension section 24 of a certain length can be wound. The setting of the extension section 24 can increase the winding amount of the resistance wire 1405, thereby compensating for the first outer mica sheet 1404. The problem of insufficient radial outer temperature is solved, and the resistance wire 1405 is located on the radial inner side of the first outer mica sheet 1404, and the winding bending point is transferred to the first inner mica sheet 1403. A plurality of holes are opened on the first inner mica sheet 1403 for passing the winding resistance wire 1405, so that the resistance wire 1405 can wrap the first inner mica sheet 1403 and the first outer mica sheet 1404 together and bind them together, thereby improving the firmness of the snap connection between the first inner mica sheet 1403 and the first outer mica sheet 1404.

[0047] Embodiment three: See also Fig.13 - Fig.21The semiconductor heat treatment heating assembly provided in this embodiment may have a basic structure similar to that of the first embodiment. The heating mechanism 14 also includes a first mica sheet 1401, a second mica sheet 1402 and a third mica sheet, and the third mica sheet is arranged between the first mica sheet 1401 and the second mica sheet 1402. Different from the first embodiment, the third mica sheet includes a first inner mica sheet 1403, a second inner mica sheet 1408 and a second outer mica sheet 1409. The first inner mica sheet 1403 is in the shape of a circular ring, and the outer peripheral edge of the first inner mica sheet 1403 and the inner peripheral edge of the second inner mica sheet 1408 can be connected to each other by a block / groove structure similar to that of the first embodiment, while the second inner mica sheet 1408 is in the shape of a ring and has a plurality of isosceles trapezoidal extensions evenly distributed along the circumferential direction on the outer peripheral edge, the isosceles trapezoidal extensions extend radially outward and are connected by a plurality of isosceles trapezoidal grooves arranged on the inner peripheral edge of the second outer mica sheet 1409, so that the inner peripheral edge of the second inner mica sheet 1408 is tightly fitted with the outer peripheral edge of the first inner mica sheet 1403, and the inner peripheral edge of the second outer mica sheet 1409 is tightly fitted with the outer peripheral edge of the second inner mica sheet 1408.

[0048] At the same time, the outer sides of the first inner mica sheet 1403 and the second inner mica sheet 1408 are interlaced with resistance wires 1405, and the distribution density of the resistance wires 1405 on the surfaces of the first inner mica sheet 1403 and the second inner mica sheet 1408 is the same. Further, the bending points of the resistance wires 1405 distributed on the outer side of the first inner mica sheet 1403 and the bending points of the resistance wires 1405 distributed on the outer side of the second inner mica sheet 1408 are staggered and arranged. And a plurality of resistance wire 1405 spiral winding structures are evenly distributed on the second outer mica sheet 1409, and the resistance wire 1405 spiral winding structures are formed by winding the resistance wires 1405.

[0049] Further, multiple groups of second limiting rings 1407 are concentrically arranged on the top surface of the first mica sheet 1401, and multiple groups of first limiting rings 1406 are concentrically arranged on the bottom surface of the second mica sheet 1402. Multiple groups of second limiting rings 22 are concentrically arranged on the bottom surface of the cover plate 1, and multiple groups of first limiting rings 21 are concentrically arranged on the top surface of the bottom plate 6. The bottom surface of the cover plate 1 is arranged opposite to the top surface of the first mica sheet 1401, and the top surface of the bottom plate 6 is arranged opposite to the bottom surface of the second mica sheet 1402. Each second limiting ring 22 can be tightly fitted with a second limiting ring 1407, and each first limiting ring 1406 can be tightly fitted with a first limiting ring 21, so that the cover plate 1, the bottom plate 6 and the heating mechanism 14 are installed more tightly, and the tight fit eliminates the air conduction medium, which can keep the heat transfer efficiency between the cover plate 1, the bottom plate 6 and the heating mechanism 14 unchanged.

[0050] Multiple groups of air permeable tubes 2 are evenly arranged on the bottom surface of the cover plate 1, and an inner sleeve 3 is arranged at the center of the bottom surface of the cover plate 1. The air permeable tubes 2 can continuously penetrate the second outer mica sheet and the bottom plate, and the resistance wire 1405 is spirally wound on the outside of the air permeable tubes 2 to form the aforementioned resistance wire 1405 spiral winding structure, and the outside of the multiple groups of air permeable tubes 2 are all provided with spiral grooves for fitting the resistance wire 1405. The gas in the working space can pass through each air permeable tube 2 and then contact the semiconductor to be processed, so as to achieve uniform heating of the wafer, and the temperature at the position of each group of air permeable tubes 2 can make up for the problem of insufficient temperature of the radial outer ring of the second inner mica sheet 1408.

[0051] In addition, multiple groups of fixing holes 19 are provided at the bottom edge of the cover plate 1, and long bolts 20 are installed inside the multiple groups of fixing holes 19. Multiple groups of bosses 23 are provided on the side of the bottom plate 6, and the tops of the multiple groups of bosses 23 are provided with fixing columns 5, and the fixing columns 5 and the fixing holes 19 match each other. By setting the fixing columns 5 to extend into the fixing holes 19, the cover plate 1 and the bottom plate 6 can be combined together using the fixing columns 5 and the fixing holes 19, and then they can be screwed and fixed inside the working space by the long bolts 20.

[0052] The working mode of the heating assembly of this embodiment is also basically the same as that of the first and second embodiments, and the power supply is also connected to the resistance wire 1405. Since the resistance wire 1405 is spirally distributed outside each group of air-permeable tubes 2, the temperature of the multiple groups of air-permeable tubes 2 will increase, and then the temperature distribution of the first inner mica sheet 1403, the second inner mica sheet 1408 and the second outer mica sheet 1409 will be more uniform. The temperature increase of the multiple groups of air-permeable tubes 2 can not only be used to heat the gas with a lower temperature, but also can be used to make up for the problem of insufficient temperature on the radial outer side of the second outer mica sheet 1409. The heat of the first inner mica sheet 1403, the second inner mica sheet 1408 and the second outer mica sheet 1409 are respectively transferred to the second mica sheet 1402 and the first mica sheet 1401, and the second mica sheet 1402 and the cover plate 1 are engaged by setting multiple sets of second limiting rings 1407 and second limiting rings 22, so that the heat of the second mica sheet 1402 can be better transferred to the cover plate 1, and the first mica sheet 1401 and the base plate 6 are engaged by setting multiple sets of first limiting rings 1406 and first limiting rings 21, so that the heat of the first mica sheet 1401 can be better transferred to the base plate 6.

[0053] See also Fig. 22 , a semiconductor heat treatment heating component in Example 1 was selected for testing. The diameter of the heating component was about 210 mm, of which the diameter of the third mica sheet was about 200 mm and the thickness was about 0.5 mm. Different locations of the cover plate 1 were selected as temperature test points, of which V1 was the temperature control location, V2 was the temperature control back location, and V3-V6 were any other four heating locations of the cover plate 1. For test results, please refer to Fig.23, where the horizontal axis represents time and the vertical axis represents temperature. The temperature data is collected every 5 seconds and a temperature curve is drawn. Analysis of the trend of the curve shows that the temperature difference of the six temperature test points at different heating stages is small, which shows that the semiconductor heat treatment heating component of the present application can achieve a uniform heating effect.

[0054] The same method was used to test the heating component products of various specifications in Examples 1 to 3, and the results showed that they all exhibited a uniform heating effect, and their service life was extended by more than 20% compared with existing similar products. The heating uniformity, working stability and service life of the product in Example 3 were particularly excellent.

[0055] Although the embodiments of the present application have been shown and described, this specific embodiment is merely an explanation of the present application and is not a limitation of the application. The specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. After reading this specification, those skilled in the art may make modifications, substitutions and variations to the embodiments without creative contributions as needed without departing from the principles and purpose of the present application. However, as long as they are within the scope of the claims of the present application, they are protected by patent law.

Claims

1. A heating assembly for semiconductor heat treatment, characterized in that: The invention comprises a cover plate (1), a bottom plate (6) and a heating mechanism (14); the heating mechanism (14) is arranged between the cover plate (1) and the bottom plate (6), and comprises a first mica sheet (1401), a second mica sheet (1402) and a third mica sheet; the third mica sheet comprises a first inner mica sheet (1403) and a first outer mica sheet (1404); the first outer mica sheet (1404) is arranged around the first inner mica sheet (1403), and the inner peripheral edge of the first outer mica sheet (1404) is snap-fitted with the outer peripheral edge of the first inner mica sheet (1403); the first inner mica sheet (1403) and the first outer mica sheet (1404) are both alternately wound with resistance wires (1405), and the distribution density of the resistance wires (1405) on the surfaces of the first inner mica sheet (1403) and the first outer mica sheet (1404) is the same.

2. The semiconductor heat treatment heating element according to claim 1, characterized in that: The bending point of the resistance wire (1405) distributed outside the first inner mica sheet (1403) and the bending point of the resistance wire (1405) distributed outside the first outer mica sheet (1404) are arranged in a staggered distribution; And / or, the resistance wire (1405) is located on the radial inner side of the first outer mica sheet (1404) and is wound around the bending point and passes through the first inner mica sheet (1403), and the resistance wire (1405) is located on the radial outer side of the first outer mica sheet (1404) and is wound around to form an extension section (24); And / or, the first inner mica sheet (1403) and the first outer mica sheet (1404) are both in the shape of a circular ring; And / or, the inner peripheral edge of the first outer mica sheet (1404) is tightly fitted with the outer peripheral edge of the first inner mica sheet (1403).

3. The semiconductor heat treatment heating assembly according to claim 1, characterized in that: The cover plate (1) is provided with a vent pipe (2) and an inner sleeve (3), and the bottom plate (6) is provided with a first through hole (7) matching the vent pipe (2) and a second through hole (8) matching the inner sleeve (3); And / or, a plurality of anti-collision plates (4) are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate (1); And / or, the cover plate (1) is provided with a plurality of groups of fixing columns (5) for connecting with the bottom plate (6); And / or, a temperature control switch (9) and a temperature monitoring device are connected to the bottom of the base plate (6), and the temperature monitoring device is used to monitor the heating temperature of the heating component.

4. The semiconductor heat treatment heating assembly according to claim 3, characterized in that: Two groups of ceramic sleeves (11) are arranged at the bottom of the base plate (6), and metal sleeves (15) are movably mounted inside the two groups of ceramic sleeves (11) by means of limiting steps (18), a high temperature resistant protective sleeve (17) is sleeved on the metal sleeve (15), the high temperature resistant protective sleeve (17) is arranged between the metal sleeve (15) and the ceramic sleeve (11), and an outer convex ring (16) for engaging the limiting step (18) is arranged on the outside of the metal sleeve (15).

5. The semiconductor heat treatment heating assembly according to claim 4, characterized in that: The two ends of the resistance wire (1405) extend through the interior of the two groups of metal sleeves (15), and the interior of the two groups of metal sleeves (15) are respectively provided with an output power line (12) and an input power line (12), and the conductive core (13) inside the power line (12) is fixedly connected to the resistance wire (1405) and the metal sleeve (15) by a pressure welding process.

6. A heating assembly for semiconductor heat treatment, characterized in that: The invention comprises a cover plate (1), a bottom plate (6) and a heating mechanism (14); the heating mechanism (14) is arranged between the cover plate (1) and the bottom plate (6), and comprises a first mica sheet (1401), a second mica sheet (1402) and a third mica sheet; the third mica sheet comprises a first inner mica sheet (1403), a second inner mica sheet (1408) and a second outer mica sheet (1409); the inner peripheral edge and the outer peripheral edge of the second inner mica sheet (1408) are respectively aligned with the outer peripheral edge of the first inner mica sheet (1403). The first inner mica sheet (1403) and the second inner mica sheet (1409) are snap-fitted together, the first inner mica sheet (1403) and the second inner mica sheet (1408) are both wound with resistance wires (1405) in an alternating manner, and the distribution density of the resistance wires (1405) on the surfaces of the first inner mica sheet (1403) and the second inner mica sheet (1408) is the same, and the second outer mica sheet (1409) is evenly distributed with a plurality of resistance wire spiral winding structures, and the resistance wire spiral winding structures are formed by winding the resistance wires (1405).

7. The semiconductor heat treatment heating assembly according to claim 6, characterized in that: When the heating mechanism (14) works normally, the heat generated per unit area by the resistance wires on the first inner mica sheet (1403), the second inner mica sheet (1408) and the second outer mica sheet (1409) is the same; and / or, the inner peripheral edge of the second inner mica sheet (1408) is in close contact with the outer peripheral edge of the first inner mica sheet (1403), and the inner peripheral edge of the second outer mica sheet (1409) is in close contact with the outer peripheral edge of the second inner mica sheet (1408); And / or, the bending point of the resistance wire (1405) distributed outside the first inner mica sheet (1403) and the bending point of the resistance wire (1405) distributed outside the second inner mica sheet (1408) are staggered; And / or, the first inner mica sheet (1403) is annular, the second inner mica sheet (1408) is annular and has a plurality of isosceles trapezoidal extensions evenly distributed along the circumferential direction on the outer peripheral edge, the isosceles trapezoidal extensions extend radially outward and are snap-fitted with a plurality of isosceles trapezoidal grooves arranged on the inner peripheral edge of the second outer mica sheet (1409).

8. The semiconductor heat treatment heating assembly according to claim 6, characterized in that: The cover plate (1) is provided with a vent pipe (2) and an inner sleeve (3), and the vent pipe (2) is in multiple groups and evenly distributed; And / or, a plurality of anti-collision plates (4) are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate (1); And / or, the cover plate (1) is provided with a plurality of groups of fixing columns (5) for connecting with the bottom plate (6); And / or, the bottom plate (6) is provided with a first through hole (7) matching the air permeable tube (2) and a second through hole (8) matching the inner sleeve (3); And / or, a temperature control switch (9) and a temperature monitoring device are connected to the bottom of the base plate (6), and the temperature monitoring device is used to monitor the heating temperature of the heating component.

9. The semiconductor heat treatment heating assembly according to claim 8, characterized in that: The air permeable tube (2) penetrates the second outer mica sheet (1409) along the axial direction, the resistance wire (1405) is located outside the plurality of groups of air permeable tubes (2) and is spirally wound, and a spiral groove for engaging the resistance wire (1405) is provided on the outer wall of the air permeable tube (2).

10. The semiconductor heat treatment heating assembly according to claim 8, characterized in that: Two groups of ceramic sleeves (11) are arranged at the bottom of the base plate (6), and metal sleeves (15) are movably installed inside the two groups of ceramic sleeves (11) by providing a limiting step (18). A high temperature resistant protective sleeve (17) is sleeved on the metal sleeve (15), and the high temperature resistant protective sleeve (17) is arranged between the metal sleeve (15) and the ceramic sleeve (11). An outer convex ring (16) for engaging the limiting step (18) is arranged on the outside of the metal sleeve (15). The two ends of the resistance wire (1405) respectively extend through the inside of the two groups of metal sleeves (15). The inside of the two groups of metal sleeves (15) is respectively provided with an output power line (12) and an input power line (12), and the conductive core (13) inside the power line (12) is fixedly combined with the resistance wire (1405) and the metal sleeve (15) by a pressure welding process.

Images