Semiconductor radiator based on flow velocity control

Abstract

A semiconductor radiator based on flow velocity control disclosed by the present invention comprises a water tank and a heat dissipation mechanism at the bottom of the water tank, a centrifugal water pump is installed in the water tank, a liquid cooling structure is arranged at the top of the water tank, and the liquid cooling structure comprises a contact plate, a contact liquid cooling layer and a heat dissipation interlayer hot plate. The spiral channel is arranged to increase the length of a cooling liquid flowing path and reduce flowing dead zones, the speed reduction spoiler is arranged in the center of a heat source to disturb the flowing state of the cooling liquid, so that the cooling liquid flows uniformly and has enough time to make contact with a heat dissipation surface to absorb enough heat, and the heat dissipation efficiency is improved. Cooling liquid with absorbed heat quickly leaves a heat dissipation center through accelerated turbulent flow at the edge of the hot plate, the heat dissipation efficiency is greatly improved, the cooling liquid can take away heat of a heat source semiconductor device based on cooperation of the flow speed control structure, the phase change heat-conducting fin and the fin set, circulating cooling is achieved, a stable working state is quickly achieved, and the service life of the heat source semiconductor device is prolonged. And long-term stable work is maintained, and the use of a semiconductor device requiring long-term continuous stable heat dissipation is met.

Description

Technical Field

[0001] The invention relates to the technical field of chip heat dissipation, and more specifically to a semiconductor heat sink based on flow rate control. Background Art

[0002] With the continuous advancement of semiconductor technology, the integration of chips is getting higher and higher, and the number of transistors has increased significantly. This has caused a sharp increase in the heat generated by the chip during operation. The operating frequency of the chip has also been continuously improved. For example, the main frequency of some high-end CPUs has exceeded 5GHz. High-frequency computing will cause more electrical energy to be converted into heat energy, and the power consumption problem has become increasingly prominent. Especially in 5G base stations, chips need to work stably for a long time in complex outdoor environments, and have high requirements for heat dissipation reliability and weather resistance. The chip generates heat during operation. For this part of the heat, if it is not effectively dissipated, the chip temperature will gradually increase, which will affect the use effect and product reliability.

[0003] In the existing technology, the treatment methods include air cooling and water cooling. Air cooling uses high thermal conductivity materials such as metal sheets to attach to the back of the chip, absorbs the heat of the motherboard chip through the heat conductor, and conducts the heat to the aluminum sheet group or copper sheet group with a very large heat dissipation area, and finally blows the heat away through the fan; water cooling is to dissipate the heat of the chip through the cooling water circulation. At present, the heat dissipation efficiency of both methods cannot meet the design and use requirements of chips in complex outdoor environments in 5G base stations.

[0004] Therefore, it is necessary to research and develop a semiconductor heat sink based on flow rate control to solve the above problems. Summary of the invention

[0005] The purpose of the present invention is to provide a semiconductor radiator based on flow rate control in response to the problems existing in the prior art. The length of the coolant flow path is increased through a spiral channel to reduce the flow dead zone of the coolant. A deceleration spoiler, a flow rate transition plate and an acceleration spoiler are coordinated. A deceleration spoiler is set at the center of the heat source to disturb the flow state of the coolant, so that the coolant flows evenly and has enough time to contact the heat dissipation surface to absorb enough heat. The cooling liquid is quickly separated from the heat dissipation center by accelerating the spoiler at the edge of the hot plate with the absorbed heat. Based on the coordination of the flow rate control structure with the phase change thermal conductive sheet and the fin group, the coolant can take away the heat of the heat source semiconductor device while realizing circulating cooling to solve the problems raised in the background technology.

[0006] To achieve the above object, the present invention provides the following technical solutions: A semiconductor radiator based on flow rate control, comprising a water tank and a heat dissipation mechanism at the bottom thereof, wherein a centrifugal water pump is installed inside the water tank, a liquid cooling structure is arranged on the top of the water tank, and the liquid cooling structure comprises a contact plate, a contact liquid cooling layer and a heat dissipation sandwich hot plate, wherein the contact plate and the contact liquid cooling layer are arranged integrally, a lower partition is arranged between the contact liquid cooling layer and the heat dissipation sandwich hot plate, the contact liquid cooling layer comprises a quasi-annular guide wall with a spiral channel, and a flow rate transition plate, a plurality of deceleration spoilers and an acceleration spoiler are arranged inside the spiral channel for disturbing the flow state of the coolant; A water inlet is arranged at the axis of the lower baffle, and the output end of the centrifugal water pump is connected with the inner end of the spiral channel through the water inlet. A water storage cavity is arranged on the top of the heat dissipation interlayer hot plate, and a plurality of evenly distributed interlayer water outlets are penetrated through the bottom of the heat dissipation interlayer hot plate. An interlayer water outlet guide pipe is arranged at the bottom of the heat dissipation interlayer hot plate and directly below the interlayer water outlet. S-shaped guide walls are arranged on both sides of the inner part of the interlayer water outlet guide pipe, and a plurality of guide acceleration plates are arranged in the channel between the S-shaped guide walls on both sides. A water outlet is penetrated through the surface of the lower baffle; The water tank and the heat dissipation mechanism are detachably mounted, and a phase-change heat conducting sheet is provided on the water tank portion for absorbing and conducting the heat of the water tank and the coolant to the outside.

[0007] Preferably, the spiral channel comprises a deceleration channel and an acceleration channel which are interconnected, wherein the acceleration channel has inner concave channels arranged alternately on both sides along its trajectory, and the inner concave channels, the deceleration channel and the acceleration channel are separated into a spiral cavity structure by a spiral support wall, the acceleration channel surrounds the outermost side of the deceleration channel, the flow velocity transition plate is located at the junction of the deceleration channel and the acceleration channel, a plurality of deceleration spoilers are arranged around the deceleration channel, a plurality of acceleration spoilers are arranged alternately in the inner concave channels on both sides of the acceleration channel, and the side of the acceleration spoiler away from the spiral support wall is arranged flush with the side wall of the acceleration channel; The inner diameter of the flow channel of the deceleration channel is larger than the inner diameter of the flow channel of the acceleration channel, and gaps are reserved between the flow velocity transition plate, the deceleration spoiler plate, the acceleration spoiler plate and the spiral support wall.

[0008] Preferably, the water outlet matches with an end of the acceleration channel away from the deceleration channel, and a ramp communicating with the water outlet is provided on the surface of the lower partition.

[0009] Preferably, the cross-sectional shape of the sandwich drain port is set to be rectangular, and the outer end of the rectangular sandwich drain port is provided with a triangular slope, and the plurality of sandwich drain ports are distributed in a ring array; The number of the guide acceleration plates is set to four, and the four guide acceleration plates are staggeredly arranged at the bend nodes of the S-shaped guide wall.

[0010] Preferably, the heat dissipation mechanism includes a bottom cover plate, a fin group is integrally provided at the bottom of the bottom cover plate, the bottom cover plate and the bottom of the water tank are detachably installed through a screw-on structure, a placement interlayer is formed between the bottom cover plate and the water tank, and the phase change thermal conductive sheet is detachably installed in the placement interlayer.

[0011] Preferably, the fin group includes first concentric circular fins, cross fins, second concentric circular fins, fork fins and third concentric circular fins, and the first concentric circular fins, cross fins, second concentric circular fins, fork fins and third concentric circular fins are stacked in sequence from top to bottom and arranged as a whole.

[0012] Preferably, the screw-on structure includes an inner ring plate and an outer ring plate, which are respectively fixed to the bottom of the water tank and the outside of the top of the bottom cover plate, and the outer side of the inner ring plate is provided with an external thread, and the inner side of the outer ring plate is provided with an internal thread matching the external thread.

[0013] Preferably, a sandblasting layer is provided on the outer side of the fin group, and a vapor deposition layer is provided on the inner surface of the spiral channel, the water storage cavity and the S-shaped guide wall, and the vapor deposition layer is made of silicon dioxide.

[0014] The semiconductor radiator also includes a temperature feedback flow rate regulating system, which includes a hot plate temperature sensor, a water tank temperature sensor and a main board circuit board. The hot plate temperature sensor is embedded at the top axis position of the contact plate, and is used to fit and sense the temperature of the heat source semiconductor device. The water tank temperature sensor is placed inside the water tank and is used to sense the temperature of the coolant. A real-time temperature display alarm is provided at the upper edge of the contact plate, which is used to display the temperature information of the heat source semiconductor device and the coolant in real time, and provide an overheating alarm signal when the heat dissipation limit of the radiator is exceeded. The input end and the output end of the main circuit board are respectively provided with an A / D converter and a D / A converter, and the hot plate temperature sensor and the water tank temperature sensor are both electrically connected to the A / D converter.

[0015] Preferably, a distribution box is provided outside the water tank, the main board circuit board is installed in the distribution box, and a power supply group is installed inside the main board circuit board, the main board circuit board is electrically connected to the power supply group, the hot plate temperature sensor and the real-time temperature display alarm are electrically connected to the main board circuit board through a No. 1 electrical connection line, the water tank temperature sensor is electrically connected to the main board circuit board through a No. 2 electrical connection line, a vent is provided on the water tank, and the No. 2 electrical connection line passes through the vent, and the centrifugal water pump is electrically connected to the D / A converter.

[0016] Technical effects and advantages of the present invention: The spiral channel is used to increase the length of the coolant flow path and reduce the coolant flow dead zone. The deceleration spoiler, flow transition plate and acceleration spoiler are coordinated. A deceleration spoiler is set at the center of the heat source to disturb the flow state of the coolant, so that the coolant flows evenly and has enough time to contact the heat dissipation surface to absorb enough heat. The acceleration spoiler is used at the edge of the hot plate to make the coolant quickly leave the heat dissipation center with the absorbed heat, thereby greatly improving the heat dissipation efficiency. Based on the coordination of the flow rate control structure with the phase change thermal conductive sheet and the fin group, the coolant can take away the heat of the heat source semiconductor device while realizing circulating cooling, and can quickly reach a stable working state and maintain long-term stable operation, meeting the heat dissipation requirements of semiconductor devices in 5G base stations that require long-term, continuous and stable heat dissipation, and ensuring the reliability and weather resistance of the device for heat dissipation of semiconductor devices.

[0017] By combining the temperature feedback flow rate regulation system, the sensing signals of the hot plate temperature sensor and the water tank temperature sensor are used to feed back to the main board circuit board, and the monitoring data is displayed in real time on the screen of the real-time temperature display alarm. It is controlled according to the temperature threshold set in the main board circuit board. The real-time temperature detection of the hot plate and the real-time adjustment of the pumping intensity of the centrifugal water pump are achieved through the built-in control algorithm. The flow rate of the coolant is adjusted according to the feedback of the hot plate temperature and the coolant temperature, and an abnormal operation early warning plan is set. Under the heat dissipation effect brought by changing the flow rate, the highest heat dissipation efficiency at the current temperature is achieved when the semiconductor device heats up rapidly, minimizing the energy loss caused by ineffective heat dissipation or excessive heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a stereoscopic diagram of the overall structure of the present invention from a first viewing angle.

[0019] Figure 2 It is a stereoscopic diagram of the overall structure of the present invention from a second viewing angle.

[0020] Figure 3 It is a cross-sectional view of the overall structure of the present invention.

[0021] Figure 4 For the present invention Figure 3 A perspective view of the structure shown.

[0022] Figure 5 It is an exploded view of the overall structure of the present invention from a first perspective.

[0023] Figure 6 This is an exploded view from a second perspective of the overall structure of the present invention.

[0024] Figure 7 For the present invention Figure 6 A cross-sectional view of the structure shown.

[0025] Figure 8It is a three-dimensional diagram of the contact liquid cooling layer in the present invention.

[0026] Fig. 9 It is a top view of the contact liquid cooling layer in the present invention.

[0027] Fig.10 The figure is a schematic diagram of the deceleration working principle of the deceleration spoiler in the present invention.

[0028] Fig.11 This is a diagram showing the acceleration working principle of the acceleration spoiler in the present invention.

[0029] Fig.12 This is a diagram showing the acceleration working principle of the guide acceleration plate in the present invention.

[0030] Fig.13 It is a three-dimensional diagram of the disassembled structure of the lower baffle and the heat dissipation interlayer hot plate of the present invention.

[0031] Fig.14 It is a system control flow chart of the temperature feedback flow rate regulation system in the present invention.

[0032] In the figure: 1. Water inlet; 2. Liquid cooling structure; 3. Water outlet; 4. Deceleration spoiler; 5. Acceleration spoiler; 6. Distribution box; 7. Spiral channel; 8. Interlayer water outlet; 9. Interlayer water outlet guide pipe; 10. S-shaped guide wall; 11. Water tank; 12. Centrifugal water pump; 13. Placement of interlayer; 14. Bottom cover plate; 15. Phase change heat conductive sheet; 16. Fin group; 17. Screw-on structure; 18. Hot plate temperature sensor; 19. Heat source semiconductor device; 20. Real-time temperature display alarm; 21. Main board circuit board; 22. Power supply group; 23. No. 1 electrical connection line; 24. No. 2 electrical connection line; 25. Water tank temperature sensor; 201, contact plate; 202, contact liquid cooling layer; 203, lower baffle; 204, heat dissipation interlayer hot plate; 205, quasi-annular guide wall; 206, flow rate transition plate; 900, guide accelerator plate; 111, vent hole; 161. First concentric ring fin; 162. Cross-shaped fin; 163. Second concentric ring fin; 164. Fork-shaped fin; 165. Third concentric ring fin. DETAILED DESCRIPTION

[0033] An embodiment of the present invention is further described below in conjunction with the accompanying drawings: Refer to the instruction manual Figure 1-Figure 13A semiconductor radiator based on flow rate control is shown, comprising a water tank 11 and a heat dissipation mechanism at the bottom thereof. A centrifugal water pump 12 is installed inside the water tank 11. The material of the water tank 11 is one of copper, aluminum, and epoxy resin, and the bottom layer of the water tank 11 is 1 mm thick. A liquid cooling structure 2 is arranged on the top of the water tank 11, and the liquid cooling structure 2 includes a contact plate 201, a contact liquid cooling layer 202 and a heat dissipation sandwich hot plate 204, wherein the contact plate 201 and the contact liquid cooling layer 202 are arranged integrally, and a lower partition plate 203 is arranged between the contact liquid cooling layer 202 and the heat dissipation sandwich hot plate 204, and the contact liquid cooling layer 202 includes a quasi-annular guide wall 205 with a spiral channel 7, and a flow rate transition plate 206, a plurality of deceleration spoilers 4 and a plurality of acceleration spoilers 5 are arranged inside the spiral channel 7 to disturb the flow state of the coolant; in this embodiment, the contact plate 201 is set as a circular plate with a diameter of 200 mm, which is located on the surface of the contact liquid cooling layer 202 and capped; the contact liquid cooling layer 202 is set as a circle with a diameter of 200 mm. The deceleration spoiler 4, the acceleration spoiler 5 and the flow rate transition plate 206 are all fixedly connected to the bottom of the contact plate 201.

[0034] A water inlet 1 is provided at the axis of the lower partition 203, and the output end of the centrifugal water pump 12 is connected with the inner end of the spiral channel 7 through the water inlet 1. A water storage cavity is provided on the top of the heat dissipation interlayer hot plate 204, and a plurality of evenly distributed interlayer water outlets 8 are penetrated through the bottom of the heat dissipation interlayer hot plate 204. An interlayer water outlet guide pipe 9 is provided at the bottom of the heat dissipation interlayer hot plate 204 and directly below the interlayer water outlet 8. S-shaped guide walls 10 are provided on both sides of the inner part of the interlayer water outlet guide pipe 9, and a plurality of guide acceleration plates 900 are provided in the channel between the S-shaped guide walls 10 on both sides. A water outlet 3 is penetrated on the surface of the lower partition 203; the contact plate 201, the contact liquid cooling layer 202, the lower partition 203, the heat dissipation interlayer hot plate 204 and the interlayer water outlet guide pipe 9 are distributed in sequence from top to bottom. The contact plate 201, the contact liquid cooling layer 202, the lower baffle plate 203, the interlayer water outlet guide pipe 9, the flow rate transition plate 206, the deceleration spoiler 4 and the acceleration spoiler 5 are all made of copper or aluminum.

[0035] The water tank 11 and the heat dissipation mechanism are detachably mounted, and a phase-change heat conducting sheet 15 is provided on the bottom of the water tank 11 to absorb and conduct heat of the water tank 11 and the coolant to the outside.

[0036] Furthermore, as a preferred embodiment of the present invention, the spiral channel 7 includes a deceleration channel and an acceleration channel that are interconnected, wherein the acceleration channel has inner concave channels staggered on both sides along its trajectory, and the inner concave channels, the deceleration channel and the acceleration channel are separated into a spiral cavity structure by a spiral support wall, the acceleration channel surrounds the outermost side of the deceleration channel, the flow velocity transition plate 206 is located at the junction of the deceleration channel and the acceleration channel, a plurality of deceleration spoilers 4 are distributed around the deceleration channel, a plurality of acceleration spoilers 5 are staggered in the inner concave channels on both sides of the acceleration channel, and the acceleration spoiler 5 is arranged flush with the side wall of the acceleration channel on the side away from the spiral support wall.

[0037] The inner diameter of the flow channel of the deceleration channel is larger than that of the flow channel of the acceleration channel. Gaps are reserved between the flow rate transition plate 206, the deceleration spoiler 4 and the acceleration spoiler 5 and the spiral support wall to facilitate the passage of fluid through the channel, forming multiple water flows with impact force and causing disturbances between each other.

[0038] The deceleration spoilers 4 in the deceleration channel are numbered 401, 402, 403, 404, 405, 406, 407, 408, 409, 410, 411, 412, 413, 414, 415, 416, 417, and 418 from the inside to the outside, among which the deceleration spoilers 4 numbered 401-408 are set as hook-shaped diverter columns with a length of 14 mm and a height of 4.5 mm, the deceleration spoilers 4 numbered 413-417 are set as hook-shaped diverter columns with a length of 14 mm and a height of 4.25 mm, the deceleration spoiler 4 numbered 418 is set as a hook-shaped diverter column with a length of 10 mm and a height of 3.25 mm, and the deceleration spoilers 4 numbered 409-412 are set as hook-shaped diverter columns with a length of 20 mm and a height of 6.3 mm.

[0039] The accelerating spoilers 5 in the accelerating channel are numbered 501, 502, 503, 504, 505, 506, 507, 508, 509, 510, 511, 512, 513, 514, 515, 516, 517, 518, 519, and 520 in sequence, wherein the accelerating spoilers 5 numbered 501-510 are conical arcs with a base angle of 79.55° and a vertex angle of 26.66° and a length of 14.12 mm. The acceleration spoiler 5 numbered 511-516 is a semicircular hook-shaped diverter column composed of a conical arc with a bottom angle of 87.41°, a top angle of 30.93° and a bottom line of 14 mm in length; the acceleration spoiler 5 numbered 517-520 is a semicircular hook-shaped diverter column composed of an outer conical arc with a bottom angle of 26.88°, a top angle of 37.39° and an inner conical arc with a bottom angle of 10.99° and a top angle of 13.87°.

[0040] The structural design based on flow rate control is located in the contact liquid cooling layer 202 and the guide acceleration plate 900. The spiral channel 7 greatly increases the length of the coolant flow path, improves the Reynolds number of the fluid, and reduces the coolant flow dead zone, so that the coolant flows evenly and has enough time to contact the heat dissipation surface, thereby taking away a large amount of heat from the heat source semiconductor device 19.

[0041] like Fig.10 As shown, the deceleration spoiler 4 is used to hinder the flow of water in the main channel and guide it into three directions. Fig.10 The water flow in channel 2 will hinder the forward flow of water in channel 3, and the water flow in channel 3 will hinder the forward flow of water in channel 1, thus achieving a mutual obstruction disturbance that greatly reduces the flow rate and achieves a deceleration effect; at the same time, the coolant collides with the spiral support wall and the spoiler, and the coolant in channel 3 meets the coolant in channel 2, and the coolant in channel 3 meets the coolant in channel 1, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0042] like Fig.11 As shown, by accelerating the flow diversion of spoiler 5, Fig.11 The water flow in the main channel is shown to divert to multiple flow channels, such as Fig.11 As shown in the flow-aiding channels 1, 2 and 3, the water flow in each flow-aiding channel will help accelerate the water flow in the main channel, thereby achieving the effect of accelerating the water flow; at the same time, the coolant collides with the spiral support wall and the spoiler, and the coolant in the flow-aiding channel meets the coolant in the main channel, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0043] The special structure in the liquid cooling structure 2 can efficiently take away the heat on the contact plate 201. After the coolant enters the contact liquid cooling layer 202 from the center of the circle, it passes through a series of deceleration spoilers 4 to achieve a deceleration effect, so that it stays in the center of the heat dissipation surface for a sufficient time to absorb sufficient heat, and then flows to the edge of the heat dissipation surface and passes through the flow rate transition plate 206 to enter the flow rate acceleration zone located at the edge of the heat dissipation plate, so that the coolant that has absorbed heat and heated up can quickly leave the heat dissipation surface and enter the interlayer below the contact liquid cooling layer 202. In this way, the coolant entering the heat dissipation center can achieve the effect of slowly passing through the heat dissipation center to absorb a large amount of heat and then accelerating to leave the heat dissipation center.

[0044] Furthermore, as a preferred embodiment of the present invention, the water outlet 3 matches the end of the acceleration channel away from the deceleration channel, and a ramp communicating with the water outlet 3 is provided on the surface of the lower partition 203 .

[0045] Furthermore, as a preferred embodiment of the present invention, the cross-sectional shape of the sandwich drain port 8 is set to be rectangular, and the outer end of the rectangular sandwich drain port 8 is provided with a triangular slope, and the multiple sandwich drain ports 8 are distributed in a ring array.

[0046] The number of the guide acceleration plates 900 is set to four, and the four guide acceleration plates 900 are staggeredly arranged at the bend nodes of the S-shaped guide wall 10 . In this embodiment, the number of interlayer water outlets 8 is set to 16, which are numbered 801, 802, 803, 804, 805, 806, 807, 808, 809, 810, 811, 812, 813, 814, 815, and 816 respectively. The interlayer water outlets 8 numbered 801-808 are distributed in the outer layer in an axial ring array of the heat dissipation interlayer hot plate 204, and the remaining interlayer water outlets 8 are distributed in the inner layer in an axial ring array of the heat dissipation interlayer hot plate 204. The angle between the axis connecting two adjacent interlayer water outlets 8 located on the outer layer and the axis of the heat dissipation interlayer hot plate 204 is 45°; the angle between the axis connecting two adjacent interlayer water outlets 8 located on the inner side and the axis of the heat dissipation interlayer hot plate 204 is 45°, and the interlayer water outlets 8 of the outer layer and the interlayer water outlets 8 of the inner layer are staggered.

[0047] like Figure 3 As shown, the number of the guide acceleration plates 900 is set to four, which are numbered 901, 902, 903, and 904 in sequence. The guide acceleration plates 900 corresponding to numbers 901-904 are staggeredly arranged at the bend nodes of the S-shaped guide wall 10.

[0048] The coolant enters the interlayer in contact with the liquid cooling layer 202, playing a role of buffering and cooling. The coolant entering the interlayer flows through the water outlet 3 and the interlayer water outlet 8, and flows through the guide acceleration plate 900 and quickly returns to the water tank 11 for re-cooling, forming a circulation path for the coolant. Its acceleration effect is as follows: Fig.12 As shown, through the diversion of the guide acceleration plate 900, Fig.12 The water flow in the main channel is diverted into multiple flow-aiding channels, such as Fig.12 As shown in the flow-aiding channels 1, 2, 3 and 4, the water flow in each flow-aiding channel will help accelerate the water flow in the main channel, thereby achieving the effect of accelerating the water flow; at the same time, the coolant collides with the S-shaped guide wall 10 and the guide acceleration plate 900, and the coolant in the flow-aiding channel meets the coolant in the main channel, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0049] The guide acceleration plate 900 is a crescent-shaped structure consisting of an outer conical arc with a bottom angle of 74° and a top angle of 28° and an inner conical arc with a bottom angle of 23° and a top angle of 14°.

[0050] Further, as a preferred embodiment of the present invention, the heat dissipation mechanism includes a bottom cover plate 14, and the bottom cover plate 14 is made of one of the materials selected from copper, aluminum, and epoxy resin. A fin group 16 is integrally provided at the bottom of the bottom cover plate 14, and the fin group 16 is made of one of the materials selected from copper, aluminum, and epoxy resin, such as an anodized process material including anodized aluminum and anodized copper. The bottom cover plate 14 and the bottom of the water tank 11 are detachably installed through a screw-on structure 17, and a placement interlayer 13 is formed between the bottom cover plate 14 and the water tank 11, and a phase change thermal conductive sheet 15 is detachably installed in the placement interlayer 13; the phase change thermal conductive sheet 15 is 2-3 mm thick and is made of silicone grease or Honeywell PTM7950 material, which is not only low in cost but also has good thermal conductivity.

[0051] Furthermore, as a preferred embodiment of the present invention, the fin group 16 includes a first concentric circular fin 161, a cross fin 162, a second concentric circular fin 163, a fork fin 164 and a third concentric circular fin 165. The first concentric circular fin 161, the cross fin 162, the second concentric circular fin 163, the fork fin 164 and the third concentric circular fin 165 are stacked in sequence from top to bottom and arranged as a whole. The thickness of the first concentric circular fin 161, the cross fin 162, the second concentric circular fin 163, the fork fin 164 and the third concentric circular fin 165 are all set to 3 mm, and air flow channels are provided between the first concentric circular fin 161, the second concentric circular fin 163 and the third concentric circular fin 165. The staggered stacking structure increases the contact area with the air and makes the gas flow direction and the direction perpendicular to the flow have stronger disturbance, which can improve the uniformity of the flow.

[0052] The fin group 16 cooperates with the phase change heat conductive sheet 15 to timely absorb the temperature of the coolant in the water tank 11. The phase change heat conductive sheet 15 undergoes a phase change when heated, changing from solid to liquid. Then, in this process, it absorbs a large amount of heat, which can promote the temperature inside the water tank 11 to be transferred out, thereby achieving the purpose of cooling the coolant and improving the heat dissipation efficiency of the coolant itself.

[0053] The coolant in the water tank 11 can be replaced. The water tank 11 is arranged as a detachable structure, and the water tank 11 can be removed to replace the coolant. Furthermore, an external circulation system can be arranged to participate in cooling, and a circulation pump and a cooling mechanism can be used to circulate and cool the coolant.

[0054] Furthermore, as a preferred embodiment of the present invention, the screw-on structure 17 includes an inner ring plate and an outer ring plate, which are respectively fixed to the bottom of the water tank 11 and the outside of the top of the bottom cover plate 14, and the outer side of the inner ring plate is provided with an outer thread, and the inner side of the outer ring plate is provided with an inner thread that matches the outer thread. The screw-on of the bottom of the water tank 11 and the bottom cover plate 14 is achieved by the cooperation of the inner ring plate and the outer ring plate, which facilitates the replacement of the failed phase-change heat conductive sheet 15. The phase-change heat conductive sheet 15 located below the water tank 11 can reduce the air thermal resistance and thus optimize the heat transfer. The phase-change heat conductive sheet 15 can quickly transfer the heat brought by the coolant in the water tank 11 to the fin group 16 below, reduce the temperature of the coolant, and then realize that the phase-change heat conductive sheet 15 keeps the coolant in the water tank 11 at a lower temperature to achieve continuous and stable cooling and heat dissipation.

[0055] Further, as a preferred embodiment of the present invention, a sandblasting layer is provided on the outside of the fin group 16, and the sandblasting layer is made of one of silicon carbide, mullite, corundum, and aluminum oxide, and has a thickness of 0.5-1 mm. The spiral channel 7, the water storage cavity, and the inner surface of the S-shaped guide wall 10 are all provided with a vapor deposition layer, and the vapor deposition layer is made of silicon dioxide. The vapor deposition layer is deposited by plasma enhanced chemical vapor deposition, and the deposition material is one of silicon nitride, silicon dioxide, and aluminum oxide, and the thickness of the vapor deposition layer is 0.5-0.8 mm.

[0056] Refer to the instruction manual Figure 1-Figure 14 As shown, the semiconductor radiator also includes a temperature feedback flow rate regulation system, which includes a hot plate temperature sensor 18, a water tank temperature sensor 25 and a main board circuit board 21. The hot plate temperature sensor 18 is embedded at the top axial position of the contact plate 201, and is used to adhere to and sense the temperature of the heat source semiconductor device 19. The water tank temperature sensor 25 is placed inside the water tank 11, and is used to sense the coolant temperature; a real-time temperature display alarm 20 is provided at the upper edge of the contact plate 201, which is used to display the temperature information of the heat source semiconductor device 19 and the coolant in real time, and provide an overheating alarm signal when the heat dissipation limit of the radiator is exceeded.

[0057] The input end and the output end of the main circuit board 21 are respectively provided with an A / D converter and a D / A converter, and the hot plate temperature sensor 18 and the water tank temperature sensor 25 are both electrically connected to the A / D converter.

[0058] Further, as a preferred embodiment of the present invention, a distribution box 6 is provided outside the water tank 11, a main board circuit board 21 is installed in the distribution box 6, and a power supply group 22 is installed inside the main board circuit board 21, the main board circuit board 21 is electrically connected to the power supply group 22, the hot plate temperature sensor 18 and the real-time temperature display alarm 20 are electrically connected to the main board circuit board 21 through the No. 1 electrical connection line 23, the water tank temperature sensor 25 is electrically connected to the main board circuit board 21 through the No. 2 electrical connection line 24, a vent hole 111 is provided on the water tank 11, the vent hole 111 is located at the top of the side wall of the water tank 11, a rectangular notch is formed on its outer wall, and the No. 2 electrical connection line 24 passes through the vent hole 111, and the centrifugal water pump 12 is electrically connected to the D / A converter. The pumping intensity of the centrifugal water pump 12 is controlled by the main board circuit board 21 according to the sensed temperature of the hot plate temperature sensor 18. The vent hole 111 penetrates the side wall of the water tank 11, making it connected inside and outside, so as to ensure the normal flow of water and to lead out the power supply line of the water pump; the water tank 11 adopts a detachable combined structure, which is convenient for adding or replacing different coolants, making the heat dissipation device easy to install and repair. The hot plate temperature sensor 18 is located at the center of the circular surface of the contact plate 201, and adopts a miniature platinum resistance temperature sensor, which adopts the internal wiring of the plate.

[0059] The sensing signals of the hot plate temperature sensor 18 and the water tank temperature sensor 25 are fed back to the main board circuit board 21, and the monitoring data is displayed in real time on the screen of the real-time temperature display alarm 20. The control is performed according to the temperature threshold set in the main board circuit board 21. The real-time temperature detection of the hot plate and the real-time adjustment of the pumping intensity of the centrifugal water pump 12 are achieved through the built-in control algorithm. The specific functions of the system are as follows.

[0060] When the hot plate temperature sensor 18 detects that the temperature exceeds the emergency cooling temperature start value set by the user, it enters the emergency cooling working state, which includes the following three situations: Scenario 1: The temperature growth rate monitored and fed back by the hot plate temperature sensor 18 is positive and getting faster and faster. At this time, the power of the centrifugal water pump 12 is continuously increased to increase its pumping intensity, reduce the temperature difference between the coolant and the hot plate, and accelerate the heat dissipation of the hot plate.

[0061] Situation 2: The temperature growth rate monitored and fed back by the hot plate temperature sensor 18 is zero, or is positive and getting slower and slower. At this time, the power of the centrifugal water pump 12 is controlled to keep its pumping intensity unchanged. Under this pumping intensity, the flow rate of the coolant is fast, providing the most efficient heat exchange efficiency for the currently rapidly heating heat source semiconductor device 19. Once the temperature growth rate continues to increase, the working state of Situation 1 is entered.

[0062] Scenario three: the temperature growth rate monitored and fed back by the hot plate temperature sensor 18 is negative, and the power of the centrifugal water pump 12 is controlled to continuously reduce its pumping intensity, so that the coolant can fully contact the hot plate, taking away enough heat to improve the heat dissipation efficiency while reducing power consumption. At this time, once the temperature growth rate working state changes due to the reduction in the pumping intensity of the centrifugal water pump 12, it will immediately enter the working state of the corresponding situation.

[0063] When the temperature of the hot plate is below the emergency cooling temperature set by the user, the system is in normal working state; the normal working state and abnormal heat dissipation state conditions and treatment measures of the system are as follows: Normal working state (ie, normal working state): when the temperature drops below the set emergency cooling temperature opening value, the centrifugal water pump 12 is controlled to reduce the pumping intensity to the minimum. At this time, the heat dissipation efficiency can ensure the normal and stable operation of the semiconductor device.

[0064] Abnormal heat dissipation state: When the system detects that the temperature of the coolant exceeds the hot plate temperature or exceeds the maximum coolant temperature value set by the user, the system controls the real-time temperature display alarm 20 to issue an alarm to the user. At this time, the user can choose to replace the coolant, or stop the abnormal operation of the heat source semiconductor device 19 and take a series of measures to deal with it.

[0065] The system adjusts the flow rate of the coolant according to the feedback of the hot plate temperature and the coolant temperature, and sets an abnormal operation warning scheme. Since then, under the heat dissipation effect brought by changing the flow rate, the highest heat dissipation efficiency at the current temperature is achieved when the heat source semiconductor device 19 heats up rapidly, and the energy loss caused by ineffective heat dissipation or excessive heat dissipation is minimized.

[0066] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor heat sink based on flow rate control, comprising a water tank (11) and a heat dissipation mechanism at the bottom thereof, wherein a centrifugal water pump (12) is installed inside the water tank (11), characterized in that: A liquid cooling structure (2) is arranged on the top of the water tank (11), and the liquid cooling structure (2) comprises a contact plate (201), a contact liquid cooling layer (202), and a heat dissipation sandwich hot plate (204), wherein the contact plate (201) and the contact liquid cooling layer (202) are arranged integrally, and a lower partition plate (203) is arranged between the contact liquid cooling layer (202) and the heat dissipation sandwich hot plate (204), and the contact liquid cooling layer (202) comprises a quasi-annular guide wall (205) with a spiral channel (7), and a flow velocity transition plate (206), a plurality of deceleration spoilers (4), and a plurality of acceleration spoilers (5) are arranged inside the spiral channel (7) for disturbing the flow state of the cooling liquid; A water inlet (1) is provided at the axis of the lower baffle (203); the output end of the centrifugal water pump (12) is connected to the inner end of the spiral channel (7) through the water inlet (1); a water storage cavity is provided at the top of the heat dissipation sandwich hot plate (204); a plurality of evenly distributed sandwich water outlets (8) are penetrated through the bottom of the heat dissipation sandwich hot plate (204); a sandwich water outlet guide pipe (9) is provided at the bottom of the heat dissipation sandwich hot plate (204) and directly below the sandwich water outlets (8); two sides of the sandwich water outlet guide pipe (9) are provided with S-shaped guide walls (10); a plurality of guide acceleration plates (900) are provided in the channel between the S-shaped guide walls (10) on both sides; and a water outlet (3) is penetrated through the surface of the lower baffle (203); The heat dissipation mechanism is detachably mounted on the bottom of the water tank (11), and a phase-change heat conducting sheet (15) is fitted on the bottom of the water tank (11) for absorbing and conducting heat of the water tank (11) and the coolant to the outside.

2. A semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The spiral channel (7) comprises a deceleration channel and an acceleration channel which are interconnected, wherein the acceleration channel has inner concave channels arranged alternately on both sides along its trajectory, and the inner concave channels, the deceleration channel and the acceleration channel are separated into a spiral cavity structure by a spiral support wall, the acceleration channel surrounds the outermost side of the deceleration channel, the flow velocity transition plate (206) is located at the junction of the deceleration channel and the acceleration channel, a plurality of deceleration spoilers (4) are arranged around the deceleration channel, a plurality of acceleration spoilers (5) are arranged alternately in the inner concave channels on both sides of the acceleration channel, and the side of the acceleration spoiler (5) away from the spiral support wall is arranged flush with the side wall of the acceleration channel; The inner diameter of the flow channel of the deceleration channel is greater than the inner diameter of the flow channel of the acceleration channel, and a gap is reserved between the flow velocity transition plate (206), the deceleration spoiler (4), the acceleration spoiler (5) and the spiral support wall.

3. A semiconductor heat sink based on flow rate control according to claim 2, characterized in that: The water outlet (3) matches an end of the acceleration channel away from the deceleration channel, and a ramp communicating with the water outlet (3) is provided on the surface of the lower partition plate (203).

4. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The cross-sectional shape of the sandwich drain port (8) is set to be rectangular, and the outer end of the rectangular sandwich drain port (8) is provided with a triangular slope, and a plurality of the sandwich drain ports (8) are distributed in a ring array; The number of the guide acceleration plates (900) is set to four, and the four guide acceleration plates (900) are arranged in a staggered manner at the bend nodes of the S-shaped guide wall (10).

5. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The heat dissipation mechanism comprises a bottom cover plate (14), a fin group (16) is integrally provided at the bottom of the bottom cover plate (14), the bottom cover plate (14) and the bottom of the water tank (11) are detachably mounted via a screw-on structure (17), a placement interlayer (13) is formed between the bottom cover plate (14) and the water tank (11), and a phase change heat conductive sheet (15) is detachably mounted in the placement interlayer (13).

6. A semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The fin group (16) comprises a first concentric circular ring fin (161), a cross-shaped fin (162), a second concentric circular ring fin (163), a fork-shaped fin (164) and a third concentric circular ring fin (165); the first concentric circular ring fin (161), the cross-shaped fin (162), the second concentric circular ring fin (163), the fork-shaped fin (164) and the third concentric circular ring fin (165) are stacked in sequence from top to bottom and arranged integrally.

7. The semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The screw-on structure (17) comprises an inner ring plate and an outer ring plate, the inner ring plate and the outer ring plate being respectively fixed to the bottom of the water tank (11) and the outside of the top of the bottom cover plate (14), and the outer side of the inner ring plate is provided with an external thread, and the inner side of the outer ring plate is provided with an internal thread matching the external thread.

8. The semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The outer side of the fin group (16) is provided with a sandblasting layer, and the inner surfaces of the spiral channel (7), the water storage cavity and the S-shaped guide wall (10) are all provided with a vapor deposition layer, and the vapor deposition layer is made of silicon dioxide.

9. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: It also includes a temperature feedback flow rate regulation system, which includes a hot plate temperature sensor (18), a water tank temperature sensor (25) and a main board circuit board (21); the hot plate temperature sensor (18) is embedded at the top axis position of the contact plate (201) and is used to fit and sense the temperature of the heat source semiconductor device (19); the water tank temperature sensor (25) is placed inside the water tank (11) and is used to sense the temperature of the coolant; a real-time temperature display alarm (20) is provided at the upper edge of the contact plate (201) and is used to display the temperature information of the heat source semiconductor device (19) and the coolant in real time, and to provide an overheat alarm signal; An A / D converter and a D / A converter are respectively provided at the input end and the output end of the main circuit board (21), and the hot plate temperature sensor (18) and the water tank temperature sensor (25) are both electrically connected to the A / D converter.

10. The semiconductor heat sink based on flow rate control according to claim 9, characterized in that: A distribution box (6) is arranged outside the water tank (11), a main board circuit board (21) is installed in the distribution box (6), and a power supply group (22) is installed inside the main board circuit board (21), the main board circuit board (21) and the power supply group (22) are electrically connected, the hot plate temperature sensor (18) and the real-time temperature display alarm (20) are both electrically connected to the main board circuit board (21) via a No. 1 electrical connection line (23), the water tank temperature sensor (25) is electrically connected to the main board circuit board (21) via a No. 2 electrical connection line (24), a vent hole (111) is provided on the water tank (11), and the No. 2 electrical connection line (24) passes through the vent hole (111), and the centrifugal water pump (12) is electrically connected to the D / A converter.

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