Voltage regulator integrated structure and manufacturing method thereof
By directly connecting the power control module and the switch module in the SOC chip package module, and using thermally conductive magnetic film and inductive coil technology, the problem of parasitic effect of interconnected structure in integrated voltage regulators is solved, significantly improving the power management effect and processor performance.
Patent Information
- Application Number
- CN202510025069.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-07
- Publication Date
- 2025-04-25
AI Technical Summary
In the existing integrated voltage regulator solution, the parasitic effects caused by the interconnection structure between the power control module and the switch module and the chip seriously affect the power supply and processor performance of the system.
By setting up power control modules and switching modules in the SOC chip package module and directly connecting using hybrid bonding technology, the interconnection distance is shortened and the space of the interconnection structure is eliminated. At the same time, a thermally conductive magnetic film is used to coat the power control module and the switching module, forming a magnetic core to increase the inductance value, and setting it through the inductance coil to achieve dynamic voltage and frequency scaling.
It significantly improves the power management effect, shortens the interconnection distance, reduces conduction loss, and improves the performance and power efficiency of the processor.
Smart Images
Figure CN119894075A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor structures, and in particular to a voltage regulator integrated structure and a manufacturing method thereof. Background Art
[0002] Integrated power conversion and transmission is key to achieving efficient and high-performance data processing. Power inductors with high power density and low DC resistance are key factors in achieving efficient and miniaturized voltage regulators (VRs). Most current power supply systems use off-chip board-level voltage regulators (and board-level passive devices) to convert independent power supply voltages and then distribute them to processors through board interconnects and IC packaging. Powering in this way requires many external VR modules, and this implementation suffers from parasitic parameters in terms of both the distribution of large amounts of power and the losses associated with moving currents over long interconnect distances.
[0003] Using an integrated voltage regulator (IVR), the interconnect length from the power supply to the load can be greatly shortened, thereby reducing conduction losses and improving power efficiency. The integration of efficient IVRs will further improve the performance of digital computing devices such as high-end processors and smartphones.
[0004] Existing integrated voltage regulator solutions have non-negligible interconnect structures inside the power module and between the power module and the power load and chip. For applications with frequent workload switching, the parasitic effects of the interconnect structure will seriously affect the system's power supply and reduce the performance of the processor.
[0005] Therefore, a solution is needed to solve the influence of the parasitic effects of the interconnection structure between the power control module and the switch module of the integrated voltage regulator and the chip, so as to improve the performance of the processor. Summary of the invention
[0006] In view of this, the present application provides a voltage regulator integrated structure and a manufacturing method thereof to solve the influence of the parasitic effects of the interconnection structure of the integrated voltage regulator and improve the performance of the processor.
[0007] In a first aspect, the present application provides a voltage regulator integrated structure, comprising: a SOC chip packaging module, including a voltage regulating chip; a power control module and a switch module, which are arranged on the same side surface of the SOC chip packaging module and are directly connected to the voltage regulating chip through hybrid bonding.
[0008] The voltage regulator integrated structure provided in the present application, the power control module and the switch module are arranged on the surface of the SOC chip packaging module, and are directly connected to the SOC chip packaging module by hybrid bonding. The direct connection through hybrid bonding can shorten the interconnection distance, save the space of the interconnection structure, significantly improve the power management effect, and improve the processing performance of the voltage regulator.
[0009] Optionally, in some embodiments of the present application, a plurality of first hybrid bonding grooves are opened on a surface of one side of the chip pins in the SOC chip packaging module, and the first hybrid bonding grooves expose the chip pins; a plurality of second hybrid bonding grooves are opened on a surface of one side of the power control module, and the second hybrid bonding grooves expose the connection ports of the power control module; a plurality of third hybrid bonding grooves are opened on a surface of one side of the switch module, and the third hybrid bonding grooves expose the connection ports of the switch module; the first hybrid bonding groove, the second hybrid bonding groove and the third hybrid bonding groove are respectively filled with bonding metals; and the first hybrid bonding groove is respectively connected to the second hybrid bonding groove and the third hybrid bonding groove through bonding metal alignment.
[0010] Optionally, in some embodiments of the present application, the voltage regulator integrated structure provided by the present application further includes: a first thermally conductive magnetic film, the first thermally conductive magnetic film covers a portion of the surface of the SOC chip packaging module, at least covers the area where the power control module and the switch module are located, a portion of the area around the area where the power control module and the switch module are located, and the entire area between the power control module and the switch module; the first thermally conductive magnetic film exposes the first hybrid bonding groove; the second thermally conductive magnetic film, at least covers the surface of the power control module and the switch module on the side facing away from the SOC chip packaging module and the side of the power control module and the switch module, and is connected to the first thermally conductive magnetic film around the power control module and the switch module. Wherein, the thermal conductivity of the first thermally conductive magnetic film is greater than 60W / (m·K); the thermal conductivity of the second thermally conductive magnetic film is greater than 60W / (m·K).
[0011] The voltage regulator integrated structure provided by the present application, through the first heat-conductive magnetic film and the second heat-conductive magnetic film, jointly covers the power control module and the switch module to form a magnetic core, which can improve the inductance value, increase the stability of the inductor device, and reduce the power transmission loss. In addition, by utilizing the thermal conductivity of the heat-conductive magnetic film, the heat dissipation area and heat dissipation capacity of the SOC chip packaging module can be increased, and the heat dissipation area and heat dissipation capacity of the power control module and the switch module can be improved at the same time.
[0012] Optionally, in some embodiments of the present application, the voltage regulator integrated structure provided by the present application also includes: a first dielectric layer, the first dielectric layer covers the power control module and the switch module, and also covers a partial area around the area where the power control module and the switch module are located, and completely covers the area between the power control module and the switch module, and forms a recess in the area between the power control module and the switch module; a second thermally conductive magnetic film covers the first dielectric layer.
[0013] Optionally, in some embodiments of the present application, the voltage regulator integrated structure provided by the present application also includes: an inductor coil, which surrounds the power control module and the switch module and is connected to a first hybrid bonding groove in the area between the power control module and the switch module.
[0014] The voltage regulator integrated structure provided in the present application can improve the response speed of the overall structure through the setting of the inductor coil, realize dynamic voltage and frequency scaling (DVFS) on a nanosecond time scale, and thus improve the performance of the voltage regulator.
[0015] Optionally, in some embodiments of the present application, in the voltage regulator integrated structure provided by the present application, the inductor coil is a metal coil; and the height of the inductor coil is greater than or equal to 15 μm.
[0016] In the voltage regulator integrated structure provided in the present application, the thickness of the inductor coil can increase the Q value (quality factor) of the inductor, reduce losses, and improve the performance of the power module.
[0017] Optionally, in some embodiments of the present application, the voltage regulator integrated structure provided by the present application also includes: a second dielectric layer, the second dielectric layer fills the area between the power control module and the switch module, and covers the inductor coil located between the power control module and the switch module; the second thermally conductive magnetic film also covers the second dielectric layer; and a third dielectric layer, the third dielectric layer covers the surface of the second dielectric layer and the second thermally conductive magnetic film facing away from the SOC chip packaging module.
[0018] In another aspect of the present application, the present invention also provides a method for manufacturing a voltage regulator integrated structure, comprising the following steps: providing a SOC chip packaging module, the SOC chip packaging module at least including a voltage regulating chip; opening a plurality of first hybrid bonding grooves on a surface of a chip pin side in the SOC chip packaging module, the first hybrid bonding grooves exposing the chip pins; forming bonding metal in the first hybrid bonding grooves; providing a power control module and a switch module; opening a plurality of second hybrid bonding grooves on a surface of a power control module side, the second hybrid bonding grooves exposing a connection port of the power control module; forming bonding metal in the second hybrid bonding grooves; opening a plurality of third hybrid bonding grooves on a surface of a switch module side, the third hybrid bonding grooves exposing a connection port of the switch module; forming bonding metal in the third hybrid bonding grooves; bonding the power control module to the SOC chip packaging module through the second hybrid bonding grooves and the first hybrid bonding grooves; bonding the switch module to the SOC chip packaging module through the third hybrid bonding grooves.
[0019] The manufacturing method of the voltage regulator integrated structure provided in the present application can manufacture the voltage regulator integrated structure provided in the present application. The power control module and the switch module are arranged on the surface of the SOC chip packaging module, and are directly connected to the SOC chip packaging module by hybrid bonding. The direct connection by hybrid bonding can shorten the interconnection distance, save the space of the interconnection structure, significantly improve the power management effect, and improve the processing performance of the voltage regulator.
[0020] Optionally, in some embodiments of the present application, the manufacturing method of the voltage regulator integrated structure provided by the present application also includes the following steps: before forming the first hybrid bonding groove, forming a first thermally conductive magnetic film on the surface of one side of the chip pin in the SOC chip packaging module; when opening the first hybrid bonding groove, the first hybrid bonding groove penetrates the first thermally conductive magnetic film; after bonding the power control module and the switch module, forming a second thermally conductive magnetic film, the second thermally conductive magnetic film at least covers the surface of the power control module and the switch module on the side facing away from the SOC chip packaging module and the side of the power control module and the switch module, and is connected to the first thermally conductive magnetic film around the power control module and the switch module.
[0021] The voltage regulator integrated structure formed by the manufacturing method of the voltage regulator integrated structure provided by the present application, through the first thermal conductive magnetic film and the second thermal conductive magnetic film, jointly covers the power control module and the switch module to form a magnetic core, which can improve the inductance value, increase the stability of the inductor device, and reduce the power transmission loss. In addition, the thermal conductivity of the thermal conductive magnetic film can increase the heat dissipation area and heat dissipation capacity of the SOC chip packaging module, and at the same time improve the heat dissipation area and heat dissipation capacity of the power control module and the switch module.
[0022] Optionally, in some embodiments of the present application, in the manufacturing method of the voltage regulator integrated structure provided by the present application, after bonding the power control module and the switch module and before forming the second thermally conductive magnetic film, the following steps are also included: forming an initial metal layer around the power control module and the switch module; the initial metal layer at least covers and connects the remaining exposed first hybrid bonding groove; and patterning the initial metal layer to form an inductor coil surrounding the power control module and the switch module, and the inductor coil is connected to the first hybrid bonding groove in the area between the power control module and the switch module.
[0023] The voltage regulator integrated structure formed by the manufacturing method of the voltage regulator integrated structure provided in the present application can improve the response speed of the overall structure through the setting of the inductor coil, realize dynamic voltage and frequency scaling (DVFS) on the nanosecond time scale, thereby improving the performance of the voltage regulator. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the related technologies, the drawings required for use in the specific implementation methods or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0025] Figure 1 This is a schematic diagram of the integrated structure of a voltage regulator according to an embodiment of the present application;
[0026] Figure 2 This is a top view schematic diagram of a voltage regulator integrated structure according to an embodiment of the present application with some structures hidden;
[0027] Figure 3-Figure 7 Schematic diagram of states at different steps in a method for manufacturing a voltage regulator integrated structure according to an embodiment of the present application;
[0028] Reference numerals:
[0029] 100 - SOC chip packaging module; 210 - power control module; 220 - switch module; 300 - first dielectric layer; 400 - second thermal conductive magnetic film; 500 - inductor coil; 600 - second dielectric layer; 700 - third dielectric layer. DETAILED DESCRIPTION
[0030] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only the parts related to the present application, rather than all structures, are shown in the accompanying drawings.
[0031] In the following description, the description of known structures and technologies is omitted to avoid unnecessary confusion of the concepts of the present application. Various structural schematic diagrams according to embodiments of the present application are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified for the purpose of clear expression, and some details may be omitted. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships between them are only exemplary, and may be deviated due to manufacturing tolerances or technical limitations in practice, and those skilled in the art may additionally design regions / layers with different shapes, sizes, and relative positions according to actual needs. In the context of the present application, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be a middle layer / element between them. In addition, if a layer / element is "on" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "under" the other layer / element.
[0032] Example 1
[0033] refer to Figure 1 and Figure 2 ,as well as Figure 3-Figure 7 , this embodiment provides a voltage regulator integrated structure, including:
[0034] The SOC chip packaging module 100 includes a voltage regulating chip;
[0035] The power control module 210 and the switch module 220 are disposed on the same side surface of the SOC chip packaging module 100 and are directly connected to the voltage regulating chip through hybrid bonding.
[0036] The voltage regulator integrated structure provided in this embodiment, the power control module 210 and the switch module 220 are arranged on the surface of the SOC chip packaging module, and are directly connected to the SOC chip packaging module by hybrid bonding. The direct connection through hybrid bonding can shorten the interconnection distance, save the space of the interconnection structure, significantly improve the power management effect, and improve the processing performance of the voltage regulator.
[0037] Specifically, in some embodiments of the present application, a plurality of first hybrid bonding grooves are opened on the surface of one side of the chip pins in the SOC chip packaging module 100, and the first hybrid bonding grooves expose the chip pins; a plurality of second hybrid bonding grooves are opened on the surface of one side of the power control module 210, and the second hybrid bonding grooves expose the connection ports of the power control module 210; a plurality of third hybrid bonding grooves are opened on the surface of one side of the switch module 220, and the third hybrid bonding grooves expose the connection ports of the switch module 220; the first hybrid bonding groove, the second hybrid bonding groove and the third hybrid bonding groove are respectively filled with bonding metals; the first hybrid bonding groove is respectively connected to the second hybrid bonding groove and the third hybrid bonding groove through bonding metal alignment.
[0038] Furthermore, in some embodiments of the present application, the voltage regulator integrated structure provided in this embodiment also includes: a first thermally conductive magnetic film, the first thermally conductive magnetic film covers a portion of the surface of the SOC chip packaging module (not shown in the figure), at least covering the area where the power control module 210 and the switch module 220 are located, a portion of the area around the area where the power control module 210 and the switch module 220 are located, and the entire area between the power control module 210 and the switch module 220; the first thermally conductive magnetic film exposes the first hybrid bonding groove.
[0039] And, the second heat-conductive magnetic film 400 at least covers the surface of the power control module 210 and the switch module 220 facing away from the SOC chip packaging module and the side of the power control module 210 and the switch module 220, and is connected to the first heat-conductive magnetic film around the power control module 210 and the switch module 220. The thermal conductivity of the first heat-conductive magnetic film is greater than 60W / (m·K); the thermal conductivity of the second heat-conductive magnetic film is greater than 60W / (m·K).
[0040] In addition, it should be noted that there is a certain thickness gap between the second thermally conductive magnetic film 400 and the first dielectric layer 300 in the figure, which is not shown in particular. In fact, the second thermally conductive magnetic film is bonded to the first dielectric layer 300 and does not have the gap or thickness shown in the figure.
[0041] The voltage regulator integrated structure provided in this embodiment, through the first heat-conductive magnetic film and the second heat-conductive magnetic film 400, jointly covers the power control module 210 and the switch module 220 to form a magnetic core, which can improve the inductance value, increase the stability of the inductor device, and reduce the power transmission loss. In addition, by utilizing the thermal conductivity of the heat-conductive magnetic film, the heat dissipation area and heat dissipation capacity of the SOC chip packaging module can be increased, and the heat dissipation area and heat dissipation capacity of the power control module 210 and the switch module 220 can be improved.
[0042] Furthermore, in some embodiments of the present application, the voltage regulator integrated structure also includes: a first dielectric layer 300, the first dielectric layer 300 covers the power control module 210 and the switch module 220, and also covers a portion of the area around the area where the power control module 210 and the switch module 220 are located, and completely covers the area between the power control module 210 and the switch module 220, and forms a recess in the area between the power control module 210 and the switch module 220; the second thermally conductive magnetic film 400 covers the first dielectric layer 300.
[0043] Furthermore, in some embodiments of the present application, the voltage regulator integrated structure also includes: an inductor 500, which surrounds the power control module 210 and the switch module 220 and is connected to the first hybrid bonding groove in the area between the power control module 210 and the switch module 220.
[0044] The voltage regulator integrated structure provided in this embodiment can improve the response speed of the overall structure through the provision of the inductor coil 500, and realize dynamic voltage and frequency scaling (DVFS) on a nanosecond time scale, thereby improving the performance of the voltage regulator.
[0045] Optionally, in some embodiments of the present application, the inductor 500 is a metal coil; the height of the inductor 500 is greater than or equal to 15 μm. In the voltage regulator integrated structure provided by the present application, the thickness of the inductor can increase the Q value (quality factor) of the inductor, reduce losses, and improve the performance of the power module.
[0046] Optionally, in some embodiments of the present application, the voltage regulator integrated structure provided in this embodiment further includes: a second dielectric layer 600, the second dielectric layer 600 fills the area between the power control module 210 and the switch module 220, and covers the inductor 500 located between the power control module 210 and the switch module 220; in different embodiments, the second dielectric layer 600 can be two sub-layers, one of which fills the space between the power control module 210 and the switch module 220, covers the inductor 500, is flush with the first dielectric layer on both sides, and exposes the upper surface of the inductor 500. The second sub-layer covers the first part and the exposed surface of the inductor 500. The second thermally conductive magnetic film 400 also covers the second dielectric layer 600; the third dielectric layer 700, the third dielectric layer 700 covers the second dielectric layer 600 and the surface of the second thermally conductive magnetic film 400 facing away from the SOC chip packaging module.
[0047] Example 2
[0048] refer to Figure 3-Figure 7 This embodiment provides a method for manufacturing a voltage regulator integrated structure, which is used to manufacture the voltage regulator integrated structure provided in the above embodiment 1. The method comprises the following steps:
[0049] Providing a SOC chip packaging module, the SOC chip packaging module at least includes a voltage regulating chip;
[0050] A plurality of first hybrid bonding grooves are formed on a surface of one side of the chip pins in the SOC chip packaging module 100, and the first hybrid bonding grooves expose the chip pins;
[0051] forming a bonding metal in a first hybrid bonding groove; providing a power control module 210 and a switch module 220;
[0052] A plurality of second hybrid bonding grooves are provided on a surface of one side of the power control module 210 , and the second hybrid bonding grooves expose the connection ports of the power control module 210 ;
[0053] forming a bonding metal in the second hybrid bonding groove;
[0054] A plurality of third hybrid bonding grooves are provided on a surface of one side of the switch module 220, and the third hybrid bonding grooves expose the connection ports of the switch module 220;
[0055] forming a bonding metal in the third hybrid bonding groove;
[0056] Bonding the power control module 210 to the SOC chip packaging module through the second hybrid bonding groove and the first hybrid bonding groove;
[0057] The switch module 220 is aligned and bonded to the SOC chip packaging module through the third hybrid bonding groove.
[0058] The manufacturing method of the voltage regulator integrated structure provided in this embodiment can manufacture the voltage regulator integrated structure provided in this application. The power control module 210 and the switch module 220 are arranged on the surface of the SOC chip packaging module, and are directly connected to the SOC chip packaging module by hybrid bonding. The direct connection by hybrid bonding can shorten the interconnection distance, save the space of the interconnection structure, significantly improve the power management effect, and improve the processing performance of the voltage regulator.
[0059] Further, in some embodiments of the present application, before forming the first hybrid bonding groove, a first thermally conductive magnetic film is formed on a surface of one side of the chip pin in the SOC chip packaging module;
[0060] When the first hybrid bonding groove is opened, the first hybrid bonding groove penetrates the first thermally conductive magnetic film; after the power control module 210 and the switch module 220 are bonded, the second thermally conductive magnetic film 400 is formed, and the second thermally conductive magnetic film 400 at least covers the surface of the power control module 210 and the switch module 220 on the side facing away from the SOC chip packaging module and the side of the power control module 210 and the switch module 220, and is connected to the first thermally conductive magnetic film around the power control module 210 and the switch module 220.
[0061] The voltage regulator integrated structure formed by the manufacturing method of the voltage regulator integrated structure provided in this embodiment, through the first heat-conductive magnetic film and the second heat-conductive magnetic film 400, jointly covers the power control module 210 and the switch module 220 to form a magnetic core, which can improve the inductance value, increase the stability of the inductor device, and reduce the power transmission loss. In addition, the thermal conductivity of the heat-conductive magnetic film can increase the heat dissipation area and heat dissipation capacity of the SOC chip packaging module, and at the same time improve the heat dissipation area and heat dissipation capacity of the power control module 210 and the switch module 220.
[0062] Furthermore, in some embodiments of the present application, after bonding the power control module 210 and the switch module 220 and before forming the second thermally conductive magnetic film 400, the following steps are further included:
[0063] Forming an initial metal layer around the power control module 210 and the switch module 220;
[0064] The initial metal layer at least covers and connects the remaining exposed first hybrid bonding groove;
[0065] The patterned initial metal layer forms an inductor 500 surrounding the power control module 210 and the switch module 220 . The inductor 500 is connected to the first hybrid bonding groove in the area between the power control module 210 and the switch module 220 .
[0066] The voltage regulator integrated structure formed by the manufacturing method of the voltage regulator integrated structure provided in this embodiment can improve the response speed of the overall structure through the setting of the inductor coil 500, and realize dynamic voltage and frequency scaling (DVFS) on a nanosecond time scale, thereby improving the performance of the voltage regulator.
[0067] In the description of this specification, the description of reference terms such as "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction. In addition, the terms "first" and "second" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0068] In the above description, the technical details of the patterning and etching of each layer are not described in detail. However, those skilled in the art should understand that various technical means can be used to form layers, regions, etc. of desired shapes. In addition, in order to form the same structure, those skilled in the art can also design methods that are not completely the same as the methods described above. In addition, although the various embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage.
[0069] The above are only preferred embodiments of the present application and the technical principles used. Those skilled in the art will understand that the present application is not limited to the above specific embodiments, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present application. Therefore, although the present application is described in more detail through the above embodiments, the present application is not limited to the above embodiments, and may also include more other equivalent embodiments without departing from the concept of the present application, and the scope of protection of the present application is determined by the scope of the attached claims.
Claims
1. A voltage regulator integrated structure, characterized in that: include: SOC chip packaging module, including voltage regulation chip; The power control module and the switch module are arranged on the same side surface of the SOC chip packaging module, and are directly connected to the voltage regulating chip through hybrid bonding.
2. The voltage regulator integrated structure according to claim 1, characterized in that: A plurality of first hybrid bonding grooves are provided on a surface of one side of the chip pins in the SOC chip packaging module, and the first hybrid bonding grooves expose the chip pins; a plurality of second hybrid bonding grooves are provided on a surface of one side of the power control module, and the second hybrid bonding grooves expose the connection ports of the power control module; a plurality of third hybrid bonding grooves are provided on a surface of one side of the switch module, and the third hybrid bonding grooves expose the connection ports of the switch module; the first hybrid bonding groove, the second hybrid bonding groove and the third hybrid bonding groove are respectively filled with bonding metals; the first hybrid bonding groove is respectively connected to the second hybrid bonding groove and the third hybrid bonding groove through bonding metal alignment.
3. The voltage regulator integrated structure according to claim 2, characterized in that: Also includes: a first thermally conductive magnetic film, wherein the first thermally conductive magnetic film covers a portion of the surface of the SOC chip packaging module, at least covers the area where the power control module and the switch module are located, a portion of the area around the area where the power control module and the switch module are located, and the entire area between the power control module and the switch module; the first thermally conductive magnetic film exposes the first hybrid bonding groove; A second heat-conductive magnetic film at least covers the surface of the power control module and the switch module on the side facing away from the SOC chip packaging module and the side of the power control module and the switch module, and is connected to the first heat-conductive magnetic film around the power control module and the switch module; Wherein, the thermal conductivity of the first thermally conductive magnetic film is greater than 60 W / (m·K); the thermal conductivity of the second thermally conductive magnetic film is greater than 60 W / (m·K).
4. The voltage regulator integrated structure according to claim 3, characterized in that: Also includes: a first dielectric layer, wherein the first dielectric layer covers the power control module and the switch module, and also covers a portion of the area around the area where the power control module and the switch module are located, and completely covers the area between the power control module and the switch module, and forms a recess in the area between the power control module and the switch module; The second thermally conductive magnetic film covers the first dielectric layer.
5. The voltage regulator integrated structure according to claim 3, characterized in that: Also includes: An inductor coil surrounds the power control module and the switch module and is connected to the first hybrid bonding slot in a region between the power control module and the switch module.
6. The voltage regulator integrated structure according to claim 5, characterized in that: The inductor coil is a metal coil; The height of the inductor coil is greater than or equal to 15 μm.
7. The voltage regulator integrated structure according to claim 5, characterized in that: Also includes: a second dielectric layer, the second dielectric layer filling the area between the power control module and the switch module and covering the inductor located between the power control module and the switch module; the second thermal conductive magnetic film also covers the second dielectric layer; A third dielectric layer covers the second dielectric layer and a surface of the second thermally conductive magnetic film facing away from the SOC chip packaging module.
8. A method for manufacturing a voltage regulator integrated structure, characterized in that: The following steps are involved: Providing a SOC chip packaging module, wherein the SOC chip packaging module at least includes a voltage regulating chip; A plurality of first hybrid bonding grooves are provided on a surface of one side of the chip pins in the SOC chip packaging module, wherein the first hybrid bonding grooves expose the chip pins; forming a bonding metal in the first hybrid bonding groove; Provide power control module and switch module; A plurality of second hybrid bonding grooves are provided on a surface of one side of the power control module, wherein the second hybrid bonding grooves expose the connection ports of the power control module; forming a bonding metal in the second hybrid bonding groove; A plurality of third hybrid bonding grooves are provided on a surface of one side of the switch module, wherein the third hybrid bonding grooves expose the connection ports of the switch module; forming a bonding metal in the third hybrid bonding groove; Bonding the power control module to the SOC chip packaging module through the second hybrid bonding groove and the first hybrid bonding groove; The switch module is aligned and bonded to the SOC chip packaging module through the third hybrid bonding groove.
9. The method for manufacturing a voltage regulator integrated structure according to claim 8, characterized in that: The following steps are also included: Before forming the first hybrid bonding groove, a first thermally conductive magnetic film is formed on a surface of one side of the chip pin in the SOC chip packaging module; when the first hybrid bonding groove is opened, the first hybrid bonding groove penetrates the first thermally conductive magnetic film; After bonding the power control module and the switch module, a second thermally conductive magnetic film is formed, the second thermally conductive magnetic film at least covers the surface of the power control module and the switch module on the side facing away from the SOC chip packaging module and the side of the power control module and the switch module, and is connected to the first thermally conductive magnetic film around the power control module and the switch module.
10. The method for manufacturing a voltage regulator integrated structure according to claim 9, characterized in that: After bonding the power control module and the switch module and before forming the second thermal conductive magnetic film, the method further includes the following steps: An initial metal layer is formed around the power control module and the switch module; the initial metal layer at least covers and connects the remaining exposed first hybrid bonding grooves; The initial metal layer is patterned to form an inductor coil surrounding the power control module and the switch module, wherein the inductor coil is connected to the first hybrid bonding groove in a region between the power control module and the switch module.