High-performance ZnO heterostructure pulse detector prepared by radio frequency magnetron sputtering method

Abstract

The invention aims to provide a ZnO heterostructure-based photoelectric detector prepared by using a radio frequency magnetron sputtering method and a method for applying the ZnO heterostructure-based photoelectric detector to pulse detection, and aims to improve the sensitivity of a ZnO-based pulse detector, simplify the preparation method as much as possible, reduce the cost and enable the ZnO-based pulse detector to be suitable for industrial production. The high-performance ZnO heterostructure photoelectric detector is composed of a P-type silicon substrate, a ZnO film, a gold electrode and a test circuit. The ZnO heterostructure pulse detector is structurally characterized in that the surface of a P-type silicon substrate 1 is covered with a ZnO thin film 2, the surface of the ZnO thin film 2 is provided with an electrode 3 which is made of gold and is of an MSM structure, a circuit is built, and practical application of the device to pulse detection is achieved.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor optoelectronic technology and relates to a method using radio frequency magnetron sputtering. Background Art

[0002] In recent years, zinc oxide (ZnO), as a third-generation semiconductor, has achieved certain development and played a vital role in many fields such as high-security communications, missile tracking and warning, fire detection, biomedicine, and anti-counterfeiting detection. Therefore, the research and application of ZnO-based photodetectors have far-reaching strategic significance for social and economic development and national defense science and technology security.

[0003] The pulse sensor is a common biomedical sensor used to monitor the human body's pulse signal. In the field of medical care, the pulse signal is one of the important indicators for evaluating the patient's health status, so the research and application of pulse sensors is of great significance.

[0004] As a semiconductor material, silicon has broad application prospects in the field of pulse sensors. When combined with ZnO materials, it can form a ZnO / P-type silicon heterostructure, which shows potential advantages in the field of pulse sensors. Through the construction of the ZnO / P-type silicon heterostructure, the built-in electric field effect generated by it without doping can be utilized to enhance the sensitivity and response ability of the detection device for pulse detection.

[0005] However, most of the current research focuses on the influence of material composition, doping method, crystal quality and other aspects of P-type silicon structure on the sensitivity of pulse detection, while ignoring the practical application of ZnO / P-type silicon heterostructure in pulse sensor devices. In addition, high-quality semiconductor films play a decisive role in the performance of pulse sensors, but most of the current research uses expensive molecular beam epitaxy and pulsed laser deposition technology, which is inconsistent with the requirements of large-scale industrial production and application.

[0006] Therefore, in order to solve the above problems, the present invention makes full use of the photoelectric properties of ZnO materials and the mature preparation process of P-type silicon, and has the advantages of high sensitivity, fast response and low cost. By optimizing the preparation process, radio frequency magnetron sputtering technology is used to prepare ZnO / P-type silicon heterostructure films, in order to obtain high-quality detection device materials by optimizing the growth conditions. And it is successfully applied to pulse detection by building a circuit. The successful application of this method will provide a new idea and technical approach for the preparation of ZnO / P-type silicon pulse detectors, and lay a solid foundation for its application in the field of pulse detectors. Summary of the invention

[0007] The purpose of the present invention is to provide a method for preparing a ZnO / P type silicon heterostructure film by radio frequency magnetron sputtering technology. A ZnO / P type silicon heterostructure semiconductor film with high crystal quality is prepared by adjusting growth parameters, and on this basis, a high-performance ZnO / P type silicon heterostructure photodetector with an MSM electrode structure is prepared by direct current sputtering and wet etching methods. Furthermore, a circuit is built using the prepared device, and a pulse test is performed. The generated test signal and the actual pulse are matched through a large number of tests, thereby achieving high-sensitivity pulse detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0009] Attached Figure 1 The schematic diagram of the principle of the ZnO heterostructure pulse detector, where 1 is P-type silicon, 2 is ZnO film, and 3 is the gold electrode.

[0010] Attached Figure 2 This is the physical circuit of the ZnO heterostructure pulse detector. DETAILED DESCRIPTION

[0011] In order to more clearly understand the present invention, the preparation process of the high-performance ZnO / P-type silicon heterostructure pulse detector is described in detail below.

[0012] Growth equipment: Domestic RF magnetron sputtering table.

[0013] Target type: ZnO target.

[0014] Device process: The device electrode material is prepared by DC sputtering, and then the metal electrode of the metal-semiconductor-metal (MSM) structure is prepared by traditional UV exposure and wet etching technology.

[0015] First, a ZnO thin film was prepared by a radio frequency magnetron method, characterized in that a ZnO hot-melt ceramic target was used to grow a 2h ZnO thin film 2 on a P silicon substrate 1 by using radio frequency magnetron sputtering technology; during sputtering, the background vacuum of the equipment was evacuated to 5.0×10 -4 Pa, the growth gas pressure is 4Pa, Ar:O2 is 40:10sccm, the sputtering power is 150W, the substrate tray rotation speed is 5r / min, and the substrate temperature is 400℃.

[0016] Secondly, an Au electrode layer is prepared on the surface of the ZnO film 2 by a DC sputtering method, characterized in that a layer of Au film with a thickness of about 20 nm is evaporated; and a ZnO / P-type silicon heterostructure photodetector with an MSM electrode 3 structure is prepared by conventional UV exposure and wet etching techniques.

[0017] Finally, by building Figure 2 The circuit achieves high-sensitivity pulse detection by matching the generated test signal and the actual pulse through a large number of tests.

Claims

1. A method for preparing a high-performance ZnO heterostructure photodetector by radio frequency magnetron sputtering, and applying it to pulse detection, characterized in that: The surface of a P-type silicon substrate 1 is covered with a ZnO film 2, and the surface of the ZnO film 2 is provided with an electrode 3 of an MSM structure composed of gold, and a circuit is constructed to realize the practical application of the device to the pulse.

2. According to claim 1, the ZnO thin film is prepared by using a radio frequency magnetron method, characterized in that: ZnO hot-melt ceramic target is used to grow a 2h ZnO film 2 on a P silicon substrate 1 using radio frequency magnetron sputtering technology; during sputtering, the background vacuum of the equipment is evacuated to 5.0×10-4Pa, the growth gas pressure is 4Pa, Ar:O2 is 40:10sccm, the sputtering power is 150W, the substrate tray rotation speed is 5r / min, and the substrate temperature is 400℃.

3. According to claim 1, the Au electrode layer is prepared on the surface of the ZnO film 2 by a DC sputtering method, characterized in that: A layer of Au film with a thickness of about 20 nm was evaporated; and a ZnO / P-type silicon heterostructure photodetector with an MSM electrode 3 structure was prepared using conventional UV exposure and wet etching techniques.

4. According to claim 1, by constructing a circuit as shown in 4 and matching the generated test signal with the actual pulse through a large number of tests, high-sensitivity pulse detection is achieved.

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