Nanostructure integrated lens for infrared imaging

Abstract

Systems and methods are described that provide single nanostructure integrated superlens (110) configurations that implement light focusing functionality. A single nanostructure integrated superlens (110) may include an optical substrate (111) having a pre-configured mapping of integrated nanostructures (112), providing a metasurface for modulating the behavior of electromagnetic waves to achieve a thin planar lens. The quantization for the periodic distance of the nanostructures (112), the height of the nanostructures (112), and the lateral dimension of the nanostructures (112) may be selected for a particular single nanostructure integrated superlens (110) configuration. One or more phase diagrams configured for light focusing may be calculated for one or more design wavelengths selected for focusing. The merged phase delay requirement of the one or more phase diagrams may be satisfied by defining a pre-configured mapping of the phase distribution of the nanostructures (112) implemented by the single nanostructure integrated superlens (110).

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is a continuation-in-part of U.S. patent application No. 18 / 448,619, filed on August 11, 2023, entitled “Nanostructure Integrated Lens for Infrared Light Imaging,” the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates generally to optical lenses and, more particularly, to single nanostructure integrated metalens configurations. Background Art

[0004] Various forms of optical sensors, such as those used in imaging, ranging, depth detection, etc., have come into relatively widespread use. For example, optical sensors using semiconductor-based sensor arrays (e.g., image detector arrays, photodetector arrays, image capture arrays, etc.) have been increasingly used in mobile devices. Mobile devices, such as smart phones, tablet devices, notebook computers, and even smart watches, typically include semiconductor-based optical sensor devices in the form of one or more cameras. In addition, such mobile devices typically include some form of semiconductor-based optical sensor device for light detection and ranging (e.g., using light detection and ranging (LiDAR) for facial scanning and / or other depth mapping tasks).

[0005] For some applications, semiconductor-based optical sensor devices designed for imaging by detecting light in the infrared (IR) spectrum are utilized. Semiconductor-based optical sensor devices for IR imaging applications generally include (one or more) sensor arrays configured to detect light within one or more IR sub-spectra. Semiconductor-based optical sensor devices that support imaging within only a single IR sub-spectra are most common because the design and fabrication complexity of sensor arrays configured to detect wavelengths spanning no more than one IR sub-spectra is lower than that of sensor arrays configured to detect wavelengths spanning multiple IR sub-spectra. Examples of IR imaging applications include: thermal imagers, which typically utilize devices for imaging at least in the long-wave IR (LWIR) sub-spectrum (i.e., wavelengths of approximately 8μm-14μm); gas analysis systems, which typically utilize devices for imaging at least in the mid-wave IR (MWIR) sub-spectrum (i.e., wavelengths of approximately 3μm-5μm); and security imaging systems and 3D sensing systems, which typically utilize devices for imaging at least in the near IR (NIR) sub-spectrum (i.e., approximately 780nm-2500nm).

[0006] Miniaturization is often a goal in the implementation of semiconductor-based optical sensor devices for imaging in any spectrum, especially when the implementation is for devices intended for handheld use that are designed for portability. However, it is difficult to reduce the thickness of the optical sensor device. For example, an optical lens for light focusing is traditionally included in an optical sensor device for imaging applications, where the optical lens is used to focus incident light onto the optical sensor device. In such a system, the curvature of the lens controls the optical performance of the optical sensor device. The refractive power of the lens decreases as the radius of curvature of the lens increases, and correspondingly, the refractive power of the lens increases as the radius of curvature decreases. This is because the thickness of the lens in the direction of the optical axis increases as the radius of curvature decreases. The miniaturization of optical sensor devices utilizing such lenses is therefore limited by the thickness of the lens used to provide the necessary optical performance.

[0007] In recent years, diffractive optical elements (DOEs) in which a microstructured surface relief pattern causes light diffraction have begun to be adopted for use with optical sensor devices (e.g., for providing light focusing for optical sensor devices). The DOE consists of a thin plate having a micro-optical diffraction structure of a certain spatial pattern arranged on a predetermined mapping thereof and configured to apply an optical phase change to an incident light beam. The micro-optical diffraction structure of the DOE utilizes the height of the structure to modify the phase of the incident light (e.g., the thicker the micro-optical diffraction structure formed by the material, the greater the phase rotation provided by the micro-optical diffraction structure). This aspect of DOE implementation results in high costs for achieving higher phase levels (e.g., multiple manufacturing steps are required to achieve different structure heights).

[0008] Metalens configurations in which a metasurface modulates the behavior of electromagnetic waves and increases the effective optical path through optical resonances of nanostructures have begun to attract attention for use as light focusing devices for optical sensor devices for imaging applications. Such optical sensor devices configured to detect light from within one or more IR sub-spectra typically include a sensor array capable of detecting not only one wavelength of light within the supported sub-spectra, but also multiple wavelengths within the supported sub-spectra. Therefore, in order to support the capabilities of the sensor array of the optical sensor device as fully as possible, metalens configurations are often used to focus light of a range of wavelengths, rather than just a single wavelength. However, in general, the farther the wavelength to be focused is shifted from the center wavelength for which the single metalens is designed, the worse the light focusing quality of the metalens. As a method for widening the wavelength range that an optical sensor device can provide higher quality focusing support, existing metalens configurations typically include multiple lenses, which are either a series of metalenses or a mixture of metalenses and conventional lenses. However, the use of more than one lens increases the overall thickness of the optical sensor device and imposes limitations on miniaturization. Furthermore, even to the extent that existing metalens configurations including multiple lenses support light focusing for more than one wavelength of light, the range of wavelengths supported is typically relatively narrow-band (e.g., a range of 1 μm or less) because designing support for a wider range of wavelengths into a metalens configuration generally increases the design and fabrication complexity of the configuration substantially. Additionally, metalens configurations contemplated for light focusing in imaging applications typically provide configurations in which the nanostructures are susceptible to damage (such as through their exposure to the exterior of the lens system).

[0009] An example of a metalens configuration proposed for imaging is described in U.S. Patent Publication US20220082731. In the metalens embodiments of US20220082731, more than one metalens is used to focus light onto an image sensor, limiting the degree of miniaturization possible for the embodiments. In addition, some metalens configurations of US20220082731 provide nanostructures as included on the outward-facing side of the metalens, reducing the durability of the resulting metalens in the configuration.

[0010] International patent publication WO2022051971 also describes an example of a metalens proposed for imaging. In the metalens embodiment of WO2022051971, in addition to at least one metalens, a conventional lens is used to focus the light, limiting the degree of miniaturization possible for the embodiment. In addition, the metalens embodiment of WO2022051971 supports focusing of light with wavelengths not greater than about 1 μm. Summary of the invention

[0011] The present invention is directed to systems and methods for providing single nanostructure integrated metalens configurations. According to embodiments of the present invention, a single metalens provides light focusing functionality such as for infrared (IR) wavelengths. For example, some examples of single metalens can be configured to provide light focusing functionality for multiple wavelengths within the IR spectrum.

[0012] The single nanostructure metalens configuration of the embodiments includes an optical substrate with a preconfigured mapping of integrated nanostructures, providing a metasurface for modulating the behavior of electromagnetic waves to realize a thin-plate lens. According to some examples, the single nanostructure integrated metalens configuration can provide a supported focal length range and a relatively wide field of view. The implementation of the single nanostructure integrated metalens of the embodiments of the present invention is very suitable for use in various optical sensor devices. For example, the single nanostructure integrated metalens according to the concepts herein can be used in a thermal imaging sensor as a device for focusing light of wavelengths within the long wave IR (LWIR) sub-spectrum onto a sensor array included in the thermal imaging sensor. The single nanostructure integrated metalens configuration for light focusing according to the concepts herein can provide a higher level of miniaturization than the miniaturization of existing light focusing lens configurations, making such a metalens configuration a desirable focusing solution for handheld thermal imaging sensors where portability is a concern. According to an embodiment, a single nanostructure integrated metalens configuration can be used to focus light including a single IR wavelength, a narrowband range of IR wavelengths (e.g., 1 μm or less), or a broadband range of IR wavelengths (e.g., a range up to 6 μm), so that the single nanostructure integrated metalens can support the detection range of the sensor array included in the thermal imaging sensor as fully as possible. In addition, the broadband range of IR wavelengths or the narrowband range of IR wavelengths focused by the single nanostructure integrated metalens of the embodiments herein may span only a single IR sub-spectrum, or may span multiple IR sub-spectra. In addition, the single nanostructure integrated metalens for light focusing according to the concepts herein can provide focusing for incident light within a wide field of view, so that the single nanostructure integrated metalens can support imaging of a wider area on the object plane with only a single thermal imaging sensor.

[0013] Various material aspects of the nanostructures of a single nanostructure integrated metalens configuration may be selected. For example, a form of nanostructure (e.g., one or more forms of nanostructures, such as nanocubes, nanocubes, nanocylinders, nanoelliptical cylinders, etc.) may be selected for use with a particular single nanostructure integrated metalens. Additionally or alternatively, the periodic distance of the nanostructures (e.g., the center distance relative to adjacent nanostructures that causes adjacent nanostructures to be spaced apart according to the periodic distance), the height of the nanostructures, and the lateral dimensions of the nanostructures may be selected for a particular single nanostructure integrated metalens configuration. According to some examples, the periodic distance may be selected based at least in part on the center wavelength of the single nanostructure integrated metalens. The periodic distance of the nanostructures may also be selected based on considerations such as flexibility of phase design, field of view, difficulty of fabrication, etc. according to some examples. The height of the nanostructures may be selected based at least in part on the center wavelength of the single nanostructure integrated metalens, wherein according to some embodiments, all nanostructures implemented by the single nanostructure integrated metalens have the same height. The lateral dimensions of the nanostructures of the embodiments can be selected as a plurality of quantized lateral dimensions of the nanostructures (e.g., 2, 4, 6, 8, 12, 16, etc. different lateral dimensions corresponding to the number of phase levels to be achieved), with the period distance for the nanostructures in some examples providing an upper bound on the lateral dimensions of the nanostructures. The period distance, uniformity of nanostructure height and nanostructure form, and quantization of the lateral dimensions of the nanostructures are all factors that help reduce the difficulty of fabricating single nanostructure integrated metalenses.

[0014] The configuration of the nanostructures on the single nanostructure integrated metalens can be determined according to the phase distribution of a preconfigured mapping designed to satisfy a phase diagram configured to focus multiple wavelengths of light. The preconfigured mapping can satisfy a single phase diagram or multiple phase diagrams. The phase diagram for light focusing can be determined using empirical methods, numerical calculations, or a combination thereof. For example, determining the phase diagram using an empirical method may include: designing and making a single nanostructure integrated metalens having a first nanostructure configuration, measuring the phase distribution of the first nanostructure configuration, adjusting the design based on the phase distribution of the first configuration, making a single nanostructure integrated metalens having a second nanostructure configuration based on the adjusted design, and continuing the process until the desired phase distribution is reached. In addition, examples of numerical calculations for determining a phase diagram for light focusing include, but are not limited to, a binary diffraction phase function (e.g., a Binary2 lens phase function).

[0015] The single nanostructure integrated metalens of the embodiments can be implemented in various optical sensor devices. According to some examples, imaging implementations can include a device having a single nanostructure integrated metalens for focusing light of wavelengths within the IR spectrum. The phase distribution of the single nanostructure integrated metalens can satisfy multiple light focusing phase diagrams corresponding to multiple design wavelengths from within the IR spectrum. According to some embodiments, the design wavelength can be from a range limited to a single IR sub-spectrum, or can span multiple IR sub-spectra. Because the phase distribution of the single nanostructure integrated metalens can satisfy the light focusing phase diagram for multiple wavelengths, the embodiments can support higher quality light focusing over a broadband IR wavelength range without utilizing additional optical elements associated with the single nanostructure integrated metalens (e.g., (one or more) additional metalens, (one or more) traditional lenses, (one or more) collimators, (one or more) concentrators, (one or more) mirrors, etc.), thereby promoting a short overall track length relative to the device, and a smaller number of components in the device and lower cost. The device may, for example, include a sensor array having a pixel matrix (e.g., a 1-inch CMOS sensor) configured to detect light within a wavelength range including multiple wavelengths corresponding to multiple light focusing phase diagrams satisfied by the phase distribution of the single nanostructure integrated metalens. A sleeve or other lens support structure may be included in the device to maintain the single nanostructure integrated metalens at a desired predetermined distance from the sensor array within a focal length range corresponding to the multiple light focusing phase diagrams satisfied by the phase distribution of the single nanostructure integrated metalens. The single nanostructure integrated metalens of the device of an embodiment is configured with nanostructures integrated on an optical substrate to focus light incident on the single nanostructure integrated metalens onto the sensor array, wherein at least one side of the optical substrate on which the nanostructures are deposited faces the inside of the device. The nanostructures of the embodiments of the single nanostructure integrated metalens may thus be deposited inside the device, such as to provide protection for the nanostructures. The single nanostructure integrated metalens of an embodiment may be configured with nanostructures integrated on an optical substrate to focus light incident on the optical substrate over a wide field of view (“FOV”) (e.g., 10 ° ≤FOV≤90 ° ). In addition, the optical substrate may include a bandpass filter layer for attenuating light having a wavelength outside a range spanning a plurality of wavelengths corresponding to a plurality of light focusing phase diagrams satisfied by the phase distribution of the single nanostructure integrated metalens.

[0016] The features and technical advantages of the present disclosure have been outlined quite extensively above so that the following detailed description can be better understood. The additional features and advantages that form the subject matter of the claims herein will be described below. It will be appreciated by those skilled in the art that the disclosed concepts and specific embodiments can be easily used as the basis for modifying or designing other structures for the same purpose of achieving the present application design. It will also be appreciated by those skilled in the art that such equivalent constructions do not deviate from the spirit and scope as set forth in the appended claims. The novel features believed to be the characteristics of the designs disclosed herein, together with further purposes and advantages, will be better understood from the following description when considered in conjunction with the accompanying drawings, both in terms of operating methods and organizations. However, it will be clearly understood that each of the figures in the accompanying drawings is provided only for the purpose of illustration and description and is not intended to be a definition of the limitations of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] For a more complete understanding of the present disclosure, reference is now made to the following description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1A is an optical sensor device comprising a single nanostructure metalens configuration according to an embodiment of the present invention;

[0019] Figure 1B is an isometric view of a single nanostructure integrated metalens implementation according to an embodiment of the present invention;

[0020] Figure 2 is a flow chart of operations performed in accordance with an embodiment of configuring a single nanostructure integrated metalens according to an embodiment of the present invention;

[0021] Figure 3A is a plan view of a single nanostructure integrated superlens implemented according to an embodiment of the present invention;

[0022] Figure 3B is a side view of a single nanostructure integrated superlens implementation according to an embodiment of the present invention;

[0023] Figure 4A is an example of a light focusing phase map calculated for a single nanostructure integrated metalens configuration according to an embodiment of the present invention;

[0024] Figure 4B is an example of a light focusing phase map calculated for a single nanostructure integrated metalens configuration according to an embodiment of the present invention;

[0025] Figure 4C is an example of a light focusing phase map calculated for a single nanostructure integrated metalens configuration according to an embodiment of the present invention; and

[0026] Figure 5is an optical sensor device including a single nanostructure metalens configuration according to an embodiment of the present invention. DETAILED DESCRIPTION

[0027] Figure 1A An example embodiment of a single nanostructure integrated superlens configuration according to the concept of the present invention is shown. Specifically, Figure 1A An example embodiment of an optical sensor device 100 is illustrated, and the optical sensor device 100 includes a single nanostructure integrated metalens 110, a sensor array 120, and a support structure 130. The optical sensor device 100 of the illustrated embodiment including the sensor array 120 and the juxtaposed single nanostructure integrated metalens 110 can be used, for example, as an imaging device in various optical sensor devices, such as to capture images in the infrared (IR) spectrum.

[0028] The support structure 130 provides structural support to maintain the single nanostructure integrated metalens 110 in a desired predetermined relationship with the image detection plane of the sensor array 120. The distance at which the single nanostructure integrated metalens is maintained from the image detection plane of the sensor array can correspond to the focal length of the single nanostructure integrated metalens 110 (i.e., the distance at which light with a particular wavelength incident on the single nanostructure integrated metalens is focused in the image plane). For example, in some embodiments, the single nanostructure integrated metalens 110 can be configured to focus light of a single design wavelength (e.g., the central wavelength λ of the single nanostructure integrated metalens 110) to the image detection plane of the sensor array. c ) is focused so that there is a single focal length for which the single nanostructure integrated metalens 110 more effectively focuses light having a single design wavelength. The support structure 130 of an embodiment of the single nanostructure integrated metalens 110 can be configured to position the lens plane of the single nanostructure integrated metalens 110 at a focal length associated with the single design wavelength from the image detection plane of the sensor array 120 so as to focus light having the single design wavelength onto the image detection plane of the sensor array 120. In other embodiments, the single nanostructure integrated metalens 110 can be configured to focus light having a single design wavelength onto the image detection plane of the sensor array 120. n Focusing, each design wavelength and design focal length f n associated so that the single nanostructure integrated metalens 110 can span the minimum f n and the maximum f n The single nanostructure integrated metalens 110 is characterized by a focal length range between λ and λ for which the single nanostructure integrated metalens 110 is effective for focusing light. n Embodiments of single nanostructure integrated metalens 110 supporting focusing functionality can also be implemented with a central wavelength λ c Characterized by, in such an embodiment, λ c Can correspond to multiple design wavelengths λn In addition, some embodiments of the single nanostructure integrated metalens 110 provide a design wavelength λ n is chosen so that the design focal length f n The value is close to the central wavelength λ c The corresponding center focal length f c (For example, multiple f n Satisfying the relationship 0.95≤f n / f c ≤1.05). In addition, the support structure 130 of an embodiment of the single nanostructure integrated metalens 110 can be configured to position the lens plane of the single nanostructure integrated metalens 110 at a distance within the focal length range from the image detection plane of the sensor array 120 so as to focus light having a wavelength within a range spanning multiple design wavelengths onto the image detection plane of the sensor array 120.

[0029] Embodiments of the support structure 130 may include a sleeve (e.g., a cylindrical or elliptical cylinder wall open at both ends), a box (e.g., a square or rectangular wall open at both ends), or other configurations that provide a mechanical device having a lumen that allows sufficient light to pass through and configured to support the single nanostructure integrated metalens 110 juxtaposed with the sensor array 120. According to some examples, the support structure 130 is configured to engage the optical substrate of the single nanostructure integrated metalens 110 at a periphery of the optical substrate selected so as to avoid damage to metastructures integrated on the surface of the optical substrate facing the sensor array 120 (e.g., around the circumference of the optical substrate, at an outer edge of the surface of the optical substrate that is immediately adjacent to the circumference of the optical substrate, etc.).

[0030] The sensor array 120 may include a matrix of pixels arranged in an image detection plane configured for imaging. The pixels of the sensor array 120 may be configured to detect light having a wavelength within a detection range of IR spectrum wavelengths (i.e., from about 780 nm to 14 μm), a detection range of visible spectrum wavelengths (i.e., from about 400 nm to 700 nm), a detection range of ultraviolet (UV) spectrum wavelengths (i.e., from about 10 nm to 400 nm), or a combination thereof. For example, the sensor array 120 may include a 13.2 mm×8.8 mm matrix of IR light detection pixels integrated onto a semiconductor substrate (e.g., a 1 inch complementary metal-oxide semiconductor (CMOS) sensor). According to some embodiments, the detection range of the sensor array 120 may include the center wavelength λ of the single nanostructure integrated metalens 110. c In other embodiments, in addition to the central wavelength λ of the single nanostructure integrated metalens 110 cIn addition, the detection range of the sensor array 120 may also include multiple design wavelengths λ n , the single nanostructure integrated superlens 110 is configured to n Provides light focusing functionality.

[0031] In some embodiments, the detection range of the sensor array 120 may span only a single IR sub-spectrum. For example, the sensor array 120 may be configured to detect only wavelengths within the long wave IR (LWIR) sub-spectrum (i.e., wavelengths of approximately 8 μm-14 μm), only wavelengths within the mid wave IR (MWIR) sub-spectrum (i.e., wavelengths of approximately 3 μm-5 μm), or only wavelengths within the near IR (NIR) sub-spectrum (i.e., wavelengths of approximately 780 nm-2500 nm). In other embodiments, the detection range of the sensor array 120 may span wavelengths in multiple IR sub-spectra. For example, the sensor array 120 may include pixels configured to detect LWIR wavelengths and pixels configured to detect MWIR wavelengths, pixels configured to detect both LWIR wavelengths and MWIR wavelengths, or a combination thereof, integrated onto a single semiconductor substrate. Although the foregoing examples are described with respect to embodiments having a sensor array 120 configured to detect LWIR wavelengths and MWIR wavelengths, other embodiments may feature a sensor array configured to detect MWIR wavelengths and NIR wavelengths, LWIR wavelengths and NIR wavelengths, or a combination of LWIR wavelengths, MWIR wavelengths, and NIR wavelengths.

[0032] The single nanostructure integrated metalens 110 of the embodiments provides a thin planar lens configuration suitable for light focusing functionality. More specifically, the embodiments of the single nanostructure integrated metalens 110 can be configured to focus light having a wavelength within an IR spectrum wavelength range, a visible spectrum wavelength range, a UV spectrum wavelength range, or a combination thereof. In addition, the embodiments of the single nanostructure integrated metalens 110 configured to focus IR wavelengths can be used to focus light having (one or more) wavelengths within any sub-spectrum of the IR sub-spectrum (e.g., wavelengths within the LWIR sub-spectrum, the MWIR sub-spectrum, the NIR sub-spectrum, or a combination thereof). In addition, the embodiments of the single nanostructure integrated metalens 110 configured to focus IR wavelengths can be used to focus light including a single IR wavelength, a narrowband range of IR wavelengths (e.g., 1 μm or less), or a broadband range of IR wavelengths (e.g., a range up to 6 μm). Moreover, the broadband range of IR wavelengths or the narrowband range of IR wavelengths focused by the single nanostructure integrated metalens 110 using the embodiments herein can span a single IR sub-spectrum (e.g., configured to focus only wavelengths within the LWIR sub-spectrum, wavelengths within the MWIR sub-spectrum, or wavelengths within the NIR sub-spectrum), or can span multiple IR sub-spectra (e.g., configured to focus wavelengths within the LWIR sub-spectrum as well as wavelengths within the NWIR sub-spectrum and / or the NIR sub-spectrum).

[0033] According to an embodiment, the single nanostructure integrated metalens 110 includes an optical substrate (e.g., a transparent substrate having a transparent spectral range of at least 50 nm corresponding to the center wavelength of the operating wavelength of the associated light source, such as a transparent spectral range of 50 nm or more centered on the center frequency of the sensor array 120), such as may include optical glass, quartz, fused silica, plastic, chalcogenide, germanium (Ge), silicon (Si), zinc selenide (ZnSe), zinc sulfide (ZnS), etc. For example, in some embodiments, the single nanostructure integrated metalens 110 can be configured to focus light over the entire transparent spectral range of the optical substrate so that the transparent spectral range of the optical substrate is centered both on the center wavelength of the operating wavelength region of the single nanostructure integrated metalens 110 and on the center wavelength of the device (e.g., sensor array 120) to be used with the single nanostructure integrated metalens 110. The optical substrate of the single nanostructure integrated metalens 110 of an embodiment has a preconfigured mapping of integrated nanostructures (e.g., nanocubes, nanorectangles, nanocylinders, nanoelliptical cylinders, etc. of different quantized lateral dimensions) integrated thereon. The nanostructures may be composed of various materials, such as dielectric materials (e.g., silicon (Si), silicon nitride (SiN), gallium nitride (GaN), titanium dioxide (TiO2), etc.), plasma metal materials (e.g., materials including gold (Au), silver (Ag), platinum (Pt), and / or palladium (Pd)), and / or other materials that provide optical properties for modulating the behavior of electromagnetic waves. According to an embodiment of the single nanostructure integrated superlens 110, the optical substrate is oriented so that the surface of the optical substrate on which the nanostructures are disposed faces the sensor array 120 (e.g., the surface of the optical substrate having the integrated nanostructures is enclosed within the lumen of the support structure 130, providing protection for the nanostructures on the surface).

[0034] Figure 1B An example embodiment of a single nanostructure integrated metalens 110 is shown comprising an optical substrate 111 having nanostructures 112 integrated on a surface of the optical substrate (shown as nanostructures 112a-112h having eight different lateral dimensions corresponding to eight phase levels to be achieved in the illustrated example arranged in a predetermined mapping configured to focus incident light). It should be appreciated that although Figure 1B The example shows nanostructures disposed on the surface of one side of the optical substrate 111, but nanostructures of the same or different configurations disposed in the same or different predetermined mappings may also be disposed on the surface of the opposite side of the optical substrate in some embodiments of the present invention.

[0035] As from Figure 1AAs will be appreciated, example implementations of optical sensor device 100 include single nanostructure integrated metalens 110 as the sole optical element. That is, no optical elements (e.g., additional metalens element(s), conventional lens element(s), collimator(s), concentrator(s), mirror(s), etc.) are provided in the optical path between single nanostructure integrated metalens 110 and sensor array 120 of the illustrated embodiment to facilitate a shorter overall length of the track relative to optical sensor device 100. In operation in accordance with embodiments of the present invention, single nanostructure integrated metalens 110 provides light focusing functionality, such as to provide focusing of wavelength(s) of IR light within one or more IR sub-spectra. For example, as described in further detail below, mapping and material aspects of nanostructures 112 (e.g., nanostructure material, form of nanostructures, periodic distance for nanostructures, height of nanostructures, and / or lateral dimensions of nanostructures) are selected and / or configured to achieve desired light focusing functionality in accordance with embodiments of the present invention. According to some examples, the configuration of the single nanostructure integrated metalens 110 can provide a wide range of focal lengths and a relatively wide field of view (FOV) (e.g., 10 ° ≤FOV≤90 ° In operation according to an embodiment, the single nanostructure integrated metalens 110 may be used in light focusing implementations, such as to provide focusing functionality for various imaging applications (e.g., optical sensor devices for thermal imager applications, gas analysis applications, security imaging applications, 3D sensing applications, etc.).

[0036] Figure 2 1 is a flow chart showing operations performed in connection with configuring an embodiment of a single nanostructure integrated metalens according to the concepts of the present invention. Specifically, flow 200 provides a flow chart that may be used to configure an implementation of a single nanostructure integrated metalens 110 to be responsive to a design wavelength(s) λ according to embodiments of the present invention. n Example operation of the light focusing functionality.

[0037] The operations of flow 200 may be performed, for example, by a system based on one or more processors under the control of an instruction set (e.g., computer-implemented logic, such as software, firmware, etc.) configured to provide operations as described herein. Such a processor-based system may include one or more processors, such as a CORE or PENTIUM processor; necessary computer / processor readable memory, such as random access memory (RAM), read-only memory (ROM), flash memory, hard disk memory, solid state disk (SSD) memory, optical memory, etc.; and input / output components, such as a display, a network interface card (NIC), a keyboard, a digital pointer, a printer, etc.; coupled to one of the one or more processors via a data bus and operable to provide functionality as described herein.

[0038] Figure 2 Block 210 of the illustrated process 200 provides operations for selecting or otherwise determining material aspects of the nanostructures for a particular configuration of the single nanostructure integrated metalens 110. For example, at block 211 of the illustrated embodiment, a period distance for the nanostructures (e.g., relative to the center distance of adjacent nanostructures) is determined. At block 212 of the illustrated embodiment, dimensions of the nanostructures (e.g., height and lateral dimensions) are determined. At block 210 of an embodiment, material aspects in addition to or in lieu of the foregoing may be selected or otherwise determined, such as the form of the nanostructures (e.g., one or more forms of nanostructures, such as nanocubes, nanocubes, nanocylinders, nanoelliptical cylinders, etc.), the nanostructure materials (e.g., a particular dielectric, a plasma metal material, and / or a material providing a particular refractive index, etc.). According to an embodiment of the present invention, a nanostructure material having a refractive index of not less than 1.5 (e.g., n ≥ 1.5) for light at the operating wavelength region of the single nanostructure integrated metalens (e.g., in the example of NIR implementation using light with a wavelength of 940 nm, silicon providing a refractive index of 3.5-3.75 may be selected as the nanostructure material for implementation).

[0039] like Figure 3A and Figure 3B As illustrated in FIG. 1 , the period distance (P) utilized according to the example is a row-to-row and column-to-column (e.g., perpendicular first and second axes) center distance achieved relative to adjacent nanostructures of nanostructure 112. In the operations of block 211 according to an embodiment of the present invention, the period distance for the nanostructures is determined based at least in part on the wavelength of light relative to the operating wavelength region of the single nanostructure integrated metalens 110. For example, the period distance may be relative to the center wavelength (λ) of the operating wavelength region of the single nanostructure integrated metalens. c ) and the periodic distance is selected accordingly (e.g., in the exemplary NIR implementation, λc =940nm, in the exemplary MWIR implementation, λ c =4 μm, in an exemplary LWIR implementation, λ c =9.5 μm, in an exemplary implementation featuring an operating wavelength region of the single nanostructure integrated metalens 110 spanning both MWIR wavelengths and LWIR wavelengths, λ c =7 μm). According to some examples of the present invention, the periodic distance can be selected to fall within a range defined by the central wavelength of the operating wavelength region of the single nanostructure integrated metalens (e.g., (λ c *1.2) / 2≥P≥(λ c / 2) or (λ c *1.2) / 2≥P≥((λ c *0.8) / 2)). In some examples of focusing light having a wavelength within the NIR sub-spectrum, the periodic distance may be, for example, in the range of 400-550 nm (e.g., at a center wavelength λ c As another example, in some examples of focusing light having a wavelength within the LWIR sub-spectrum, the period distance P may be in the range of 3.8-5.7 μm (e.g., at a center wavelength λ c In the example of the above LWIR implementation with a wavelength of 9.5 μm, the period distance P can be selected to be 4 μm). The specific value of the period distance within the aforementioned range can be selected, for example, based on some examples, based on considerations about the configuration of the single nanostructure integrated metalens 110 (such as flexibility of phase design, field of view, difficulty of manufacturing, etc.). According to an embodiment of the present invention, the period distance utilized for each nanostructure of a specific mapping of nanostructures (e.g., all nanostructures on the first surface of the optical substrate) of the single nanostructure integrated metalens 110 is equal regardless of the lateral size (one or more) of the adjacent nanostructures. Therefore, the period distance of the embodiment provides an upper bound on the lateral size of these nanostructures.

[0040] According to the example, Figure 3B The height (H) of the nanostructures illustrated in FIG. 1 is the fabrication depth of the nanostructures. In the operations of block 212 according to an embodiment of the present invention, determining the size of the nanostructures may include determining the height of the nanostructures based at least in part on the wavelength of light relative to the operating wavelength region of the single nanostructure integrated metalens 110. For example, the height of the nanostructures may be determined relative to the center wavelength (λ) of the operating wavelength region of the single nanostructure integrated metalens. c ) is selected accordingly (e.g., in the exemplary NIR implementation described above, λ c =940nm, or in the exemplary LWIR implementation above, λ c=9.5 μm). According to some examples of the present invention, the height can be selected to fall within a range defined by the center wavelength of the operating wavelength region of the single nanostructure integrated metalens (e.g., λ c ≥H≥(λ c / 10)). In some examples of focusing light having a wavelength within the NIR sub-spectrum (e.g., at a central wavelength λ c In the example of the above NIR implementation with a center wavelength of λ , the height H can be selected to be 490 nm), and the height can be, for example, in the range of 100-800 nm. As another example, in some examples of focusing light having a wavelength within the LWIR sub-spectrum (e.g., at a center wavelength λ c In the example of the above LWIR implementation with a height of 9.5 μm, the height H can be selected to be 5 μm), and the height can be, for example, in the range of 1-9 μm. The specific value of the height can be selected, for example, based on considerations such as the following according to some examples: the desired or acceptable performance of the single nanostructure integrated metalens 110, the ease or difficulty of manufacturing the single nanostructure integrated metalens, etc. According to an embodiment of the present invention, the height utilized for each nanostructure of a specific mapping of nanostructures (e.g., all nanostructures on the first surface of the optical substrate) of the single nanostructure integrated metalens 110 is equal regardless of the lateral size (one or more) of the adjacent nanostructures.

[0041] like Figure 3A and Figure 3B The lateral dimensions (S) of the nanostructures illustrated in the figure are dimensions of the corresponding nanostructures in the plane of the optical substrate on which the nanostructures are integrated. For example, the lateral dimensions of the nanostructures of the embodiments may each include lateral dimensions among a plurality of quantized lateral dimensions of the nanostructure (e.g., 2, 4, 6, 8, 12, 16, etc. different lateral dimensions). That is, nanostructures having different lateral dimensions modify incident light with different values ​​of phase shift levels. According to an embodiment, the number of lateral dimensions among the plurality of quantized lateral dimensions of the nanostructure corresponds to the number of phase levels to be achieved for the single nanostructure integrated superlens 110. That is, a selected number (e.g., 2, 4, 6, 8, 12, 16, etc.) of nanostructures of quantized lateral dimensions may be provided, the selected number corresponding to the same number of phase change levels. For example, in Figure 3A and Figure 3BIn the example, the number of lateral dimensions is 8, providing lateral dimension S1 (e.g., nanostructure 112a), lateral dimension S2 (e.g., nanostructure 112b), lateral dimension S3 (e.g., nanostructure 112c), lateral dimension S4 (e.g., nanostructure 112d), lateral dimension S5 (e.g., nanostructure 112e), lateral dimension S6 (e.g., nanostructure 112f), lateral dimension S7 (e.g., nanostructure 112g), and lateral dimension S8 (e.g., nanostructure 112h), wherein each of lateral dimensions S1-S8 corresponds to a lateral dimension of a corresponding nanostructure for modifying the phase of incident light by a desired amount (e.g., S1→π / 4, S2→π / 2, S3→3π / 4, S4→π, S5→5π / 4, S6→3π / 2, S7→7π / 4, and S8→2π). According to another example, the number of lateral dimensions can be four, providing lateral dimensions S1, S2, S3, and S4, wherein each of the lateral dimensions S1-S4 corresponds to a lateral dimension of a corresponding nanostructure for modifying the phase of incident light by a desired amount (e.g., S1→π / 2, S2→π, S3→3π / 2, and S4→2π). It should be appreciated that the specific dimensions implemented to provide the desired phase level modification can vary based on various aspects of the specific nanostructure implementation, such as the material used for the nanostructure, the height, etc. (e.g., the refractive index). According to some examples of the present invention, the lateral dimensions can be selected to fall within a range defined by the period distance of the single nanostructure integrated metalens (e.g., P ≥ S X >0). In some examples where light having a wavelength within the NIR sub-spectrum is focused (e.g., at a central wavelength λ c 940 nm and the selected period distance P is 500 nm), the lateral dimension may be, for example, in the range of 100-400 nm. As another example, in some examples of focusing light having a wavelength within the LWIR sub-spectrum (e.g., at a center wavelength λ c9.5 μm and the selected period distance P is 4 μm in the above LWIR implementation example), the lateral dimension can be, for example, in the range of 1-3 μm. The specific value of the lateral dimension can be selected, for example, based on some examples, based on considerations such as: the desired or acceptable performance of the single nanostructure integrated metalens 110, the ease or difficulty of manufacturing the single nanostructure integrated metalens, etc. According to an embodiment of the present invention, the nanostructures are configured to have the same spatial resolution in the x-axis and the y-axis. In addition, according to an embodiment of the present invention, for each nanostructure of a specific mapping of nanostructures (e.g., all nanostructures on the first surface of the optical substrate) of the single nanostructure integrated metalens 110, the geometric form (e.g., nanocube, nanocuboid, nanocylinder, nanoelliptical cylinder, etc.) that quantizes the lateral dimension can be the same regardless of the lateral dimension (one or more) of adjacent nanostructures, so as to reduce the manufacturing complexity of the single nanostructure integrated metalens 110.

[0042] Depending on the embodiment, the single nanostructure integrated superlens 110 may provide light focusing functionality for a single wavelength of light or multiple wavelengths of light. Figure 2 Block 220 of the process 200 illustrated in FIG. 1 provides a method for selecting or otherwise determining a wavelength for integrating the metalens 110 with the single nanostructure for one or more design wavelengths (λ c ) to implement the mapping operation of the integrated nanostructure with light focusing functionality. For example, in block 221 of the illustrated embodiment, a method for integrating the metalens 110 with one or more discrete design wavelengths (λ) is determined. n ). Specifically, in block 221a of the illustrated embodiment, a phase diagram configured for focusing light having a design wavelength λ1 through the single nanostructure integrated metalens 110 is determined. Furthermore, as indicated in block 221n, any number of individual phase diagrams may be determined in block 221, each phase diagram corresponding to a discrete design wavelength (e.g., one phase diagram corresponding to one design wavelength λ1, two phase diagrams each corresponding to one of two design wavelengths λ1 and λ2, n phase diagrams each corresponding to n design wavelengths λ1 to λ2). n one of , etc.).

[0043] In the operation of block 221 according to an embodiment of the present invention, a numerical calculation, such as a phase focusing design technique (e.g., a diffraction phase function) according to some examples, may be used to calculate (one or more) light focusing phase maps for a particular design wavelength(s) for the single nanostructure integrated metalens 110. For example, the calculation of the phase for focusing light into the nanostructure layer of the single nanostructure integrated metalens may be a binary diffraction design, such as a Binary2 lens phase function based on an optical design program (e.g., ZEMAX) In other embodiments, an empirical method may be used to calculate the light focusing phase diagram(s) for the specific design wavelength(s) for the single nanostructure integrated metalens 110. For example, calculating the phase diagram using the empirical method may include: designing and fabricating a single nanostructure integrated metalens having a first nanostructure configuration, measuring the phase distribution of the first nanostructure configuration, adjusting the design based on the phase distribution of the first configuration, fabricating a single nanostructure integrated metalens having a second nanostructure configuration based on the adjusted design, and continuing the process until the desired phase distribution is achieved. In addition, the calculation of the light focusing phase diagram(s) for the specific design wavelength(s) for the single nanostructure integrated metalens 110 according to some embodiments may utilize a combination of numerical calculations and empirical methods.

[0044] At block 222 of the illustrated embodiment, a preconfigured mapping of integrated nanostructures (i.e., hereinafter referred to as a “preconfigured mapping”) is determined for the single nanostructure integrated metalens 110, the preconfigured mapping providing a desired spatial pattern of optical phase changes (e.g., phase rotations or shifts) for light incident on the single nanostructure integrated metalens 110. In an embodiment, the preconfigured mapping defines a configuration of nanostructures for the single nanostructure integrated metalens 110 such that the nanostructures at the (one or more) locations (x, y) on the optical substrate of the single nanostructure integrated metalens 110 satisfy the combined phase delay requirements (i.e., Φ(x, y, λ) of the (one or more) phase maps determined during block 221). n )).

[0045] is configured to satisfy one or more design wavelengths (e.g., the design wavelengths λ1 to λ n) corresponding to one or more phase maps (e.g., one or more phase maps determined during block 221) (e.g., the preconfigured mapping for the single nanostructure integrated metalens 110 determined during block 222) is not limited to focusing light having one or more design wavelengths. Rather, embodiments of the single nanostructure integrated metalens 110 provide light focusing functionality for a continuous range of wavelengths that includes the one or more design wavelengths of the single nanostructure integrated metalens 110. However, the effectiveness of the light focusing functionality decreases as the wavelength changes, the wavelength of light moves further away from the design wavelength of the single nanostructure integrated metalens 110. Thus, embodiments of the single nanostructure integrated metalens 110 having a plurality of design wavelengths that are more closely grouped provide greater effectiveness of light focusing over the wavelength range spanned by the plurality of design wavelengths than embodiments of the single nanostructure integrated metalens 110 having a plurality of design wavelengths that are more widely spaced provide light focusing over the wavelength range spanned by the plurality of design wavelengths. For example, the single nanostructure integrated metalens 110 embodiment with three design wavelengths of 9.5 μm, 10 μm, and 10.5 μm (e.g., λ1=9.5 μm, λ2=10 μm, λ3=10.5 μm) provides more effective light focusing over the wavelength range of 9.5 μm to 10.5 μm than the single nanostructure integrated metalens 110 embodiment with three design wavelengths of 8 μm, 10 μm, and 12 μm (e.g., λ1=8 μm, λ2=10 μm, λ3=12 μm) provides over the wavelength range of 8 μm to 12 μm. However, for the same reasons as explained above, the single nanostructure integrated metalens 110 embodiment does not provide effective light focusing for wavelengths outside the wavelength range spanned by the multiple design wavelengths of the embodiment (i.e., the effective light focusing bandwidth). Thus, a single nanostructure integrated metalens 110 embodiment having multiple design wavelengths that are more widely spaced provides a wider effective light focusing bandwidth than a single nanostructure integrated metalens 110 having multiple design wavelengths that are more tightly grouped with the same number of design wavelengths. For example, a single nanostructure integrated metalens 110 embodiment having three design wavelengths of 9.5 μm, 10 μm, and 10.5 μm (e.g., λ1=9.5 μm, λ2=10 μm, λ3=10.5 μm) provides an effective light focusing bandwidth of 1 μm, while a single nanostructure integrated metalens 110 embodiment having three design wavelengths of 8 μm, 10 μm, and 12 μm (e.g., λ1=8 μm, λ2=10 μm, λ3=12 μm) provides an effective light focusing bandwidth of 4 μm.

[0046] Thus, the number of design wavelengths for the single nanostructure integrated metalens 110 and the distribution of these design wavelengths can be selected, for example, based on considerations such as the desired or acceptable performance of the single nanostructure integrated metalens 110, the ease or difficulty of fabricating the single nanostructure integrated metalens, etc., according to some examples. For example, embodiments with more widely spaced distributions have a wider effective light focusing bandwidth, but provide less effective light focusing across the light focusing band, while embodiments with more tightly grouped distributions have a narrower effective light focusing bandwidth, but provide more effective light focusing across the light focusing band. Additionally, embodiments featuring more design wavelengths can provide a wider effective light focusing bandwidth without sacrificing the effectiveness of light focusing within the band, but supporting more design wavelengths comes with increased design and fabrication complexity and associated costs. Because the preconfigured mapped phase distribution of the single nanostructure integrated metalens 110 can satisfy the light focusing phase diagram for multiple design wavelengths, embodiments can support higher quality light focusing over a broadband wavelength range (e.g., a broadband IR wavelength range) without utilizing additional optical elements (e.g., additional metalens, conventional lenses, etc.) associated with the single nanostructure integrated metalens 110, resulting in a shorter overall track length relative to the device, and a smaller number and lower cost of components in the device.

[0047] Figures 4A-4C The following are multiple phase diagrams illustrating examples of pre-configured mappings that are satisfied by the single nanostructure integrated metalens embodiment according to the above-described embodiment. Specifically, Figures 4A-4C Three examples of phase maps calculated for a single nanostructure integrated metalens that provides light focusing functionality for wavelengths within the LWIR sub-spectrum according to embodiments described herein are illustrated. The single nanostructure integrated metalens 110 of the illustrated embodiments is configured to satisfy a preconfigured mapping of three phase maps, each corresponding to one of three design wavelengths: 9 μm, 10 μm, and 11 μm (e.g., λ1=9 μm, λ2=10 μm, λ3=11 μm), where 10 μm is also the center wavelength λ of the single nanostructure integrated metalens embodiment. c (For example, λ2 = λ c =10μm). Figure 5 A corresponds to the phase diagram for 9 μm, Figure 5 B corresponds to the phase diagram for 10 μm, Figure 5 C corresponds to the phase diagram for 11 μm. Figures 4A-4CEach phase map illustrated in the figure may be a phase map as determined in block 221 of process 200, and the preconfigured mapping of the single nanostructure integrated metalens embodiment of the present application may be a preconfigured mapping as determined in block 222 of process 200. In addition, the three corresponding design wavelengths of the illustrated embodiment may be a plurality of design wavelengths according to the above-described embodiments.

[0048] The foregoing exemplary operations according to flow 200 provide for determining material aspects and preconfigured mappings for nanostructures for providing implementations of a single nanostructure integrated metalens 110 configured to provide light focusing functionality for light having one or more wavelengths according to embodiments of the present invention. The determined preconfigured mappings satisfying one or more phase diagrams corresponding to one or more design wavelengths can be used, for example, to integrate nanostructures having determined material aspects on an optical substrate to provide embodiments of the single nanostructure integrated metalens 110 according to the concepts herein. For example, techniques such as photolithography, soft lithography, laser ablation, chemical self-assembly, roll-to-roll nanoimprinting, etc. can be used to integrate nanostructures, provide phase distributions according to preconfigured mappings satisfying determined (one or more) phase diagrams, and utilize optical substrates having determined material aspects to provide examples of single nanostructure integrated metalens 110. As an example for a single nanostructure integrated metalens 110 having a NIR center wavelength (e.g., λ c =940nm), a nanostructure composed of silicon (e.g., for λ = 940nm) c , n = 3.71) can be calculated based on the design wavelength for a single wavelength (e.g., λ1 = λ c =940nm) is integrated on an optical glass substrate, and has a height of 490nm (e.g., H=490nm), a period distance of 500nm maintained relative to adjacent nanostructures (e.g., P=400nm), and realizes 8 quantized lateral dimensions (e.g., S1→π / 4, S2→π / 2, S3→3π / 4, S4→π, S5→5π / 4, S6→3π / 2, S7→7π / 4, and S8→2π), and is used as a single nanostructure integrated metalens configuration to be used in optical sensor devices for IR imaging applications (e.g., 3D sensing systems, security imaging systems, gas analysis systems, thermal imaging systems, etc.). In addition, as a single nanostructure integrated metalens configuration for optical sensors with LWIR central wavelengths (e.g., λ c =10 μm), a nanostructure composed of silicon (e.g., for λ = 10 μm) c , n = 3.4) can be obtained by satisfying the requirements for the three design wavelengths (e.g., λ1 = 9 μm, λ2 = λ c=10μm, λ1=11μm) are integrated on a silicon substrate and have a height of 5μm (e.g., H=5μm), a periodic distance of 4μm maintained relative to adjacent nanostructures (e.g., P=4μm), and 8 quantized lateral dimensions (e.g., S1→π / 4, S2→π / 2, S3→3π / 4, S4→π, S5→5π / 4, S6→3π / 2, S7→7π / 4, and S8→2π) are achieved, and are used as a single nanostructure integrated superlens configuration to be used in optical sensor devices for IR imaging applications (e.g., 3D sensing systems, security imaging systems, gas analysis systems, thermal imager systems, etc.).

[0049] Figure 5 A detailed illustration of an optical sensor device 500 incorporating an instance of a single nanostructure integrated metalens 110 is provided, the instance being configured in accordance with the concepts of the present invention to provide light focusing functionality for light having one or more wavelengths using material aspects and preconfigured mappings determined according to the operation of an embodiment of flow 200. The instance of the single nanostructure integrated metalens 110 may be oriented, for example, with nanostructures 112 integrated on a side of an optical substrate 111 that faces a sensor array 120, and with a support structure 130 that positions a lens plane of the single nanostructure integrated metalens 110 at a distance 510 from an image detection plane of the sensor array 120, the distance 510 corresponding to a focal length of the light focusing functionality of the single nanostructure integrated metalens 110 (e.g., a distance selected from a range of focal lengths spanning between a minimum focal length and a maximum focal length, the minimum focal length being approximately equal to and substantially parallel to the design wavelength λ of the single nanostructure integrated metalens 110). n The corresponding light focusing phase diagram is associated with the maximum focal length and the design wavelength λ of the single nanostructure integrated metalens 110. n In addition, support structure 130 may be adjustable to reposition single nanostructure integrated metalens 110 to one or more distances different from distance 510 (e.g., a second distance selected from a focal length range spanning between a minimum focal length and a maximum focal length, the minimum focal length being consistent with the design wavelength λ of single nanostructure integrated metalens 110). n The corresponding light focusing phase diagram is associated with the maximum focal length and the design wavelength λ of the single nanostructure integrated metalens 110. nThe support structure 130 may include an aperture 520 through which light 530 may enter the support structure 130. The support structure 130 may be configured such that the light 530 entering through the aperture 520 must pass through the single nanostructure integrated metalens 110 before reaching the image detection plane of the sensor array 120. Thus, the single nanostructure integrated metalens 110 may focus light 530 of a specific wavelength (e.g., a wavelength within the effective light focusing bandwidth of the single nanostructure integrated metalens 110) into a focus point of light 540 corresponding to a pixel site of the sensor 120 on the image detection plane of the sensor array 120 according to a preconfigured mapping implemented via the nanostructure 112. The resulting instance of the optical sensor device 500 can, for example, be used in imaging applications (e.g., applications that image the IR spectrum, such as 3D sensing systems, security imaging systems, gas analysis systems, thermal imaging camera systems, etc.), and can support higher quality imaging over a broadband wavelength range (e.g., a broadband IR wavelength range) without utilizing additional optical elements associated with the single nanostructure integrated metalens 110 (e.g., (one or more) additional metalens, (one or more) conventional lenses, (one or more) collimators, (one or more) integrators, one or more mirrors, etc.), resulting in a short overall track length relative to the device, and a smaller number of components in the device and lower cost.

[0050] In some embodiments, the optical sensor device 500 may further include a bandpass filter layer 550 deposited on a surface of the single nanostructure integrated metalens 110 that is oriented away from the image detection plane of the sensor array 120. The bandpass filter layer 550 may be configured to pass a light having a wavelength λ a The light attenuation is such that λ a The wavelengths outside the effective light focusing bandwidth of the single nanostructure integrated metalens 110 (e.g., λ a ≤(λ min *0.9) and λ a ≥(λ max *1.1), where λ min is λ n The minimum wavelength, λ max is λ n The maximum wavelength of a All wavelengths outside the effective light focusing bandwidth of the single nanostructure integrated metalens 110 may be included, or only a subset of wavelengths outside the effective light focusing bandwidth of the single nanostructure integrated metalens 110 may be included. In instances where the range of wavelengths over which the sensor array 120 detects light (i.e., the imaging bandwidth) includes wavelengths outside the desired range of wavelengths to be imaged, embodiments of the optical sensor device 500 that include a bandpass filter layer 550 may be desirable.

[0051] Some embodiments of optical sensor devices configured for light focusing functionality, such as Figure 5 The optical sensor device 500 illustrated in , includes a metalens configuration that includes no more than one metalens structure (e.g., single nanostructure integrated metalens 110) and does not include additional optical elements (e.g., (one or more) additional metalens, (one or more) conventional lenses, (one or more) collimators, (one or more) concentrators, (one or more) mirrors, etc.). In other embodiments of optical sensor devices configured for light focusing functionality, the optical sensor device may include a metalens configuration having one or more lens structures (e.g., (one or more) additional metalens, (one or more) conventional lenses, etc.). For example, in embodiments of an optical sensor device having a support structure including an aperture (similar to aperture 520) for entering light, a protective lens may be included that is held by the support structure so as to completely cover the aperture. The aperture may be positioned on the outermost surface of the support structure so that the surface of the protective lens facing away from the interior of the support structure and the contents of the interior (e.g., the nanostructure integrated metalens) contact the free space outside the support structure. The protective lens can be positioned on the support structure so that light passing through the protective lens must first pass through at least one nanostructure-integrated metalens before reaching the image detection plane of the sensor array of the optical sensor device. Additionally, a surface oriented to face the image detection plane of the sensor array of the optical sensor device can include a plurality of nanostructures integrated thereon.

[0052] In addition, some embodiments of an optical sensor device having more than one lens structure configured for light focusing functionality may include a support structure that is adjustable to change the distance (one or more) separating the more than one lens structures. For example, an embodiment of an optical sensor device having two nanostructure integrated metalenses may include a support structure that holds the two nanostructure integrated metalenses and a sensor array so that light passing through the support structure must pass through the two nanostructure integrated metalenses before reaching the image detection plane of the sensor array. In the above embodiment, the two metalenses may be separated by a first distance, the metalenses closer to the sensor array may be separated from the sensor array by a second distance, and the support structure may be adjustable to change the distance separating the two metalenses. In addition, in some embodiments, one or more of the nanostructure integrated metalenses included in the optical sensor device may feature nanostructures on both faces of the (one or more) metalenses.

[0053] Although the embodiments herein are primarily described with reference to IR imaging systems, one of ordinary skill in the art will readily appreciate that the concepts described herein may be used in other implementations. For example, some single nanostructure integrated metalens embodiments configured to focus light having a wavelength within the visible spectrum wavelength range may be included in an optical sensor device for visible spectrum optical applications (e.g., mobile device cameras, visible spectrum laser systems, visual telescope systems, spectroscopy analysis systems, etc.). As another example, some single nanostructure integrated metalens embodiments configured to focus light having a wavelength within the UV spectrum wavelength range may be included in an optical sensor device for UV spectrum optical applications (e.g., UV spectrum camera systems, UV spectrum laser systems, UV telescope systems, spectroscopy analysis systems, etc.).

[0054] In addition, although the present disclosure and its advantages have been described in detail, it should be understood that various changes, sub-replacements and modifications can be made therein without departing from the spirit and scope of the design as defined in the appended claims. Moreover, the scope of the present application is not intended to be limited to the specific embodiments of the processing, machines, manufacturing, material composition, means, methods and steps described in this specification. As will be easily appreciated by those of ordinary skill in the art from the present disclosure, the processing, machines, manufacturing, material composition, means, methods or steps that currently exist or will be developed in the future to perform functions substantially the same as the corresponding embodiments described herein or to achieve results substantially the same as the corresponding embodiments described herein can be used according to the present disclosure. Therefore, the appended claims are intended to include such processing, machines, manufacturing, material composition, means, methods or steps within their scope.

[0055] Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification.

Claims

1. A metalens, comprising: an optical substrate having a transparent spectral range of at least 50 nm, the transparent spectral range including a center wavelength of a device to be used with the metalens; as well as A plurality of nanostructures, the plurality of nanostructures being integrated on the first surface of the optical substrate according to a preconfigured mapped phase distribution, wherein the nanostructures are provided in at least 8 quantized lateral dimensions and are spaced apart according to a periodic distance (P), wherein P is in (λ c *0.8) / 2 to (λ c *1.2) / 2, and where λ c is the central wavelength of the operating wavelength region of the metalens.

2. The metalens of claim 1 , wherein the preconfigured mapping satisfies a plurality of design wavelengths λ configured for use with the metalens in the range of 780 nm to 14 μm. n A plurality of phase diagrams of the corresponding light focusing functionality, wherein n is a sequence of at least two positive integers, and wherein λ c is across the multiple design wavelengths λ n The central wavelength of the wavelength range between the minimum wavelength and the maximum wavelength.

3. The metalens of claim 2, wherein n The corresponding multiple phase images and multiple design focal lengths f n is associated with c With the center focal length f c associated, and wherein the plurality of f n Satisfy 0.95≤f n / f c ≤1.

05.

4. The metalens of claim 2, wherein the plurality of design wavelengths λ n Selected from the range of 8 μm to 14 μm.

5. The metalens of claim 1 , wherein the preconfigured mapping provides no less than 10 ° And not more than 90 ° The light rays within the field of view are focused.

6. The metalens of claim 1 , wherein each of the plurality of nanostructures has the same height (H), and wherein H is λ c / 10 to λ c within the range.

7. The metalens of claim 1 , wherein the plurality of nanostructures comprises a material having a refractive index no less than 1.5 relative to an operating wavelength region of the metalens.

8. The metalens of claim 1, wherein the plurality of nanostructures comprises a plasmonic metal material comprising gold (Au), silver (Ag), platinum (Pt), palladium (Pd), or a combination thereof.

9. The metalens of claim 1 , wherein the nanostructures are provided in eight quantized lateral dimensions corresponding to eight phase change levels, wherein the eight phase change levels correspond to phase changes of π / 4, π / 2, 3π / 4, π, 5π / 4, 3π / 2, 7π / 4, and 2π, and wherein the nanostructures are configured to have the same spatial resolution in the x-axis and the y-axis.

10. An apparatus comprising: At least one optical sensor device comprising: A single nanostructure integrated superlens, wherein the single nanostructure integrated superlens comprises: an optical substrate having a transparent spectral range of at least 50 nm that includes a center wavelength of a sensor array to be used with the metalens; and a plurality of nanostructures integrated on at least one surface of the optical substrate according to a preconfigured mapped phase distribution configured to focus light incident on the single nanostructure integrated metalens, wherein the nanostructures are provided in at least 8 quantized lateral dimensions and are spaced apart according to a periodic distance (P), wherein P is in (λ c *0.8) / 2 to (λ c *1.2) / 2, and where λ c is the central wavelength of the operating wavelength region of the metalens; The sensor array, wherein the sensor array comprises a pixel matrix arranged in an image detection plane configured for imaging, and wherein the pixels are configured to detect light having a wavelength including the central wavelength λ c light of wavelength within a detection range of wavelength; and a support structure configured to maintain the single nanostructure integrated metalens in a desired predetermined relationship with an image detection plane of the sensor array, wherein the predetermined relationship is configured such that the single nanostructure integrated metalens focuses light incident on a first surface of the single nanostructure integrated metalens onto the pixel matrix, and wherein the support structure is configured to maintain the single nanostructure integrated metalens oriented in the support structure such that a second surface of the single nanostructure integrated metalens having a nanostructure of a plurality of nanostructures integrated thereon faces the image detection plane of the sensor array.

11. The apparatus of claim 10, wherein the preconfigured mapping satisfies a plurality of design wavelengths λ configured for use with a range of 780 nm to 14 μm. n A plurality of phase diagrams of the corresponding light focusing functionality, wherein n is a sequence of at least two positive integers, and wherein λ c is across the multiple design wavelengths λ n The central wavelength of the wavelength range between the minimum wavelength and the maximum wavelength.

12. The device according to claim 11, wherein n The corresponding multiple phase images and multiple design focal lengths f n is associated with c With the center focal length f c associated, and wherein the plurality of f n Satisfy 0.95≤f n / f c ≤1.

05.

13. The apparatus of claim 12, wherein the predetermined relationship positions the single nanostructure integrated metalens at a first distance away from the image detection plane, wherein the first distance is included in a distance spanning across the plurality of f n The distance range between the minimum design focal length and the maximum design focal length.

14. The apparatus of claim 13, wherein the support structure is adjustable to reposition the single nanostructure integrated metalens from a first distance away from the image detection plane to a second distance away from the image detection plane different from the first distance, wherein the second distance is included in a region spanning across the plurality of f n The distance range between the minimum design focal length and the maximum design focal length.

15. The device of claim 10, wherein all of the plurality of nanostructures are integrated on the second surface of the single nanostructure integrated metalens.

16. The device according to claim 11, wherein the device is configured so that the single-nanostructure integrated superlens focuses light incident on the first surface of the single-nanostructure integrated superlens into an illuminated area no larger than 13.2 mm×8.8 mm on the image detection plane.

17. The device of claim 11, further comprising a bandpass filter layer deposited on the first surface of the single nanostructure integrated metalens, wherein the bandpass filter layer allows light having a wavelength λ a The light attenuation is such that λ a ≤(λ min *0.9) and λ a ≥(λ max *1.1), and where λ min is λ n The minimum wavelength, λ max is λ n The maximum wavelength.

18. An apparatus comprising: At least one optical sensor device comprising: One or more lenses, including at least one nanostructure integrated metalens, wherein the at least one nanostructure integrated metalens comprises: an optical substrate having a transparent spectral range of at least 50 nm that includes a center wavelength of a sensor array to be used with the metalens; and a plurality of nanostructures integrated on at least one surface of the optical substrate according to a preconfigured mapped phase distribution configured to focus light incident on the at least one nanostructure integrated metalens, wherein the nanostructures are provided in at least 8 quantized lateral dimensions and are spaced apart according to a periodic distance (P), wherein P is in (λ c *0.8) / 2 to (λ c *1.2) / 2, and where λ c is the central wavelength of the operating wavelength region of the metalens; The sensor array, wherein the sensor array comprises a pixel matrix arranged in an image detection plane configured for imaging, wherein the pixels are configured to detect light having a wavelength including the central wavelength λ c The wavelength of light within the detection range of wavelength; a support structure configured to maintain the at least one nanostructure-integrated metalens in a desired predetermined relationship with an image detection plane of the sensor array, wherein the predetermined relationship is configured such that the at least one nanostructure-integrated metalens focuses light incident on a first surface of the at least one nanostructure-integrated metalens onto the pixel matrix, and wherein the support structure is configured to maintain the at least one nanostructure-integrated metalens oriented in the support structure such that a second surface of the at least one nanostructure-integrated metalens having a nanostructure of the plurality of nanostructures integrated thereon faces the image detection plane of the sensor array; and A protective lens, wherein the protective lens is positioned with the support structure so that light passing through the protective lens must first pass through the at least one nanostructure-integrated metalens before reaching the image detection plane of the sensor array, and wherein a first surface of the protective lens oriented away from the at least one nanostructure-integrated metalens contacts free space outside the support structure.

19. The device of claim 18, wherein the protective lens comprises a second plurality of nanostructures integrated onto a second surface of the protective lens oriented to face the at least one nanostructure-integrated metalens.

20. The apparatus of claim 18, wherein the support structure is configured to hold a second lens in addition to the at least one nanostructure-integrated metalens, wherein the second lens is positioned such that light illuminating an image detection plane of the sensor array must pass through both the second lens and the at least one nanostructure-integrated metalens before reaching the image detection plane of the sensor array, and wherein the support structure is adjustable to vary the distance separating the second lens and the at least one nanostructure-integrated metalens.

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