Semiconductor power module and method for producing semiconductor power module

Abstract

A semiconductor power module (10) comprises a substrate (4) and at least one terminal (2) electrically coupled to the substrate (4). The semiconductor power module (10) further comprises: a reinforcing material (3) comprising a material different from the material of the at least one terminal (2); and a housing having a molded body (1). The molded body (1) surrounds the substrate (4), the reinforcing member (3) and the at least one terminal (2) such that the at least one terminal (2) is integrally coupled and embedded in the molded body (1) and partially protrudes from a wall (5) of the molded body (1). The reinforcing member (3) is mechanically coupled to the at least one terminal (2) such that the reinforcing member is at least partially integrally coupled and embedded in the molded body (1) at a position where the at least one terminal (2) protrudes from the wall (5) of the molded body (1).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor power module and a corresponding manufacturing method for a semiconductor power module. Background Art

[0002] Conventional semiconductor power packages include a corresponding housing with electrical connections. In this regard, a general challenge is to facilitate a stable housing, secure electrical connections and reliable operation of the semiconductor power package. Summary of the invention

[0003] Embodiments of the present disclosure may provide a semiconductor power module having improved stability and reliable operation even for high voltage power module applications. Further embodiments of the present disclosure may provide a method of manufacturing such a semiconductor power module.

[0004] According to an embodiment, a semiconductor power module includes a substrate and at least one terminal electrically coupled to the substrate. The semiconductor power module further includes a reinforcing member, which includes a material different from the material of the at least one terminal. The semiconductor power module further includes a housing, which is implemented as a molded body or includes a molded body surrounding the substrate, the reinforcing member and the at least one terminal, so that the at least one terminal is integrally coupled and embedded in the molded body and partially protrudes from the wall of the molded body. The material of the reinforcing member is also different from the material of the molded body. The reinforcing member is mechanically coupled to the at least one terminal, so that the reinforcing member is also at least partially integrally coupled and embedded in the molded body at a position or region where the at least one terminal protrudes from the wall of the molded body. The position basically defines an area inside the molded body close to the protruding terminal section. The position does not necessarily have to be precisely located at the boundary between the terminal and the wall of the molded body.

[0005] The one or more terminals may serve as power terminals or auxiliary terminals, for example for signal wiring. The one or more terminals may be made of or include copper or a copper alloy. The one or more terminals may partially or completely include a coating made of or including one or more layers of nickel, gold, silver and / or other metals.

[0006] The housing may be formed as a molded block including, for example, a predetermined rectangular parallelepiped. The molded body may be formed of a thermoplastic or thermosetting resin or any other resin material. The molded body may be formed by means of injection molding, transfer molding and / or any other applicable molding process. The molded body may include a material containing a filler (e.g., particles or fibers). The molded body of the housing may partially or completely enclose components of the semiconductor power module, such as a substrate, the one or more terminals and / or a reinforcing member. The molded body may directly cover a section of the aforementioned components, or indirectly cover with one or more elements in the middle. The at least one terminal is partially enclosed in the molded body and provides an exposed portion used as an electrical connector. The wall of the molded body (the one or more terminals protrude from the wall) may, for example, form a side wall relative to the lateral direction and stacking direction of the semiconductor power module. These lateral directions may realize horizontal directions and may be related to the main extension plane of the semiconductor power module, while the stacking direction realizes a vertical direction perpendicular to the lateral direction. The housing may include additional elements to the molded body and may implement a frame or cover of a resin or gel filled power module with one or more embedded terminals. According to such a configuration, the molded body forms a frame and / or cover of a gel filled power module.

[0007] The substrate can be formed as a lead frame. For example, the substrate is implemented as an insulating metal substrate with a metal top layer, a metal bottom layer, and a dielectric resin layer in the middle. The resin layer can be formed as a prepreg sheet or a molded epoxy resin layer. The metallization of the metal top layer can be formed by a film and / or sheet comprising copper and / or aluminum and / or a copper alloy and / or an aluminum alloy. For example, this can also be applied to the metal bottom layer, which can be formed as copper and / or an aluminum plate and / or a corresponding alloy. The substrate can be designed as a ceramic substrate based on AlN, Si3N4 or Al2O3, wherein the top metallization and the bottom metallization are made of aluminum or copper or a corresponding alloy.

[0008] Molded semiconductor packages are a widely used, cost-effective encapsulation technology for integrated circuits, but are also used for power semiconductor devices, especially in the low-power range. Such packages may have a transfer-molded body made of a thermosetting resin, such as epoxy. The terminals are partially embedded in the molded body. For example, the terminals of such packages may have a relatively small thickness of 0.15-0.25 mm, thereby providing a certain flexibility in order to compensate for height irregularities when mounting the molded package and mechanical or thermomechanical stresses in module operation.

[0009] For example, the described semiconductor power module can realize a large molded power package with a size of up to 70 x 70 mm suitable for higher power levels (such as electric transportation). 2The corresponding terminals can form wide power terminals with a thickness of up to 2 mm and a width of up to 25 mm. In the context of the present disclosure, it was found that when such power packages are mounted to busbars in, for example, an inverter setting, these thick power terminals may deform to compensate for height tolerances. Due to their relatively large thickness, deformation of such terminals also provides strong mechanical forces to those parts of the terminals embedded in the molded package body, and therefore to the molded body in the vicinity of the terminals. This is accompanied by the risk of cracks and fractures forming in the hard and brittle molded epoxy resin body.

[0010] Due to the described configuration of the terminals and the reinforcing members embedded in the molded body of the housing, a stable semiconductor power module is feasible, which achieves reliable operation even for high-voltage power module applications and even for large-sized module bodies and terminals, and has a reduced risk of crack formation in critical areas (particularly where the one or more terminals are exposed from the molded body). The corresponding semiconductor power module is also suitable for applications in which the power module is exposed to mechanical and thermal stresses during installation and / or operation, and even if it is exposed to mechanical and thermal stresses during installation and / or operation.

[0011] According to an embodiment of the semiconductor power module, wherein the material of the reinforcement member may comprise an elastic modulus of 10-100 MPa. In the context of the present disclosure it has been found that a material having such an elastic modulus can effectively compensate or dissipate bending forces.

[0012] According to an embodiment, the reinforcing member may be made of or include rubber and / or resin and / or another elastic material. Alternatively or additionally, the material of the reinforcing member may include a hard resin, a hard organic and / or inorganic material. For example, the reinforcing member may be made of or include a reinforced glass fiber material. Alternatively or additionally, the material of the reinforcing member may include a metal, such as steel. The relatively soft material of the reinforcing member may realize a damping element that smoothly dissipates mechanical forces. Even in the case where the terminal is more firmly combined, the material may provide a better seal to be protected from moisture and / or harmful gases. The relatively hard material of the reinforcing member may realize a stability enhancing element that absorbs mechanical forces and / or causes better stress distribution so that adjacent parts of the molded body are not exposed to mechanical stress or are exposed to significantly reduced mechanical stress. The selection of the material of the reinforcing member to be formed may also depend on the intended application of the semiconductor power module. The reinforcing member forms an additional separate element to the terminal, which is directly or indirectly connected to the terminal.

[0013] According to a further embodiment of the semiconductor power module, the reinforcing member is formed by at least one of molding, coating and printing. In this regard, a fluid or pasty soft material can realize the raw material of the reinforcing member to be formed. Alternatively or additionally, the reinforcing member can be formed by or include a prefabricated element, which is attached to the at least one terminal by at least one of clamping, gluing and welding.

[0014] According to a further embodiment of the semiconductor power module, the reinforcing member is formed with a given material, thickness, width and depth coordinated with the material, thickness and width of the at least one terminal associated. For example, relative to the lateral direction, the reinforcing member may include a depth having a value of 5-15mm or up to 25mm. The depth is related to the longitudinal direction of the plate-like terminal toward the molded body. Therefore, the width of the reinforcing member is related to another lateral direction along the side wall of the molded body, and the height or thickness of the reinforcing member is related to the stacking direction perpendicular to the depth and width. The thickness of the reinforcing member can have a value of 0.5-2.5mm. The width of the reinforcing member can have a value of 2-30mm. The width of the reinforcing member can also have a certain value to cover or enclose two or more terminals.

[0015] The aforementioned size of the reinforcing member can also depend on the position and shape of the reinforcing member. According to a further embodiment, the reinforcing member is configured so that the reinforcing member partially or completely surrounds the at least one terminal. The reinforcing member can be completely embedded in the molded body, or can be arranged to be flush with the side wall of the molded body or partially protrude from the molded body. The reinforcing member can be arranged on one surface of the terminal or on two or more surfaces of the terminal. The reinforcing member can completely surround the one or more adjacent terminals. Therefore, for example, the width of the reinforcing member can be coordinated with the width of the one or more terminals, and the one or more terminals can have a corresponding width of up to 25mm. The thickness of the reinforcing member can also be coordinated with the thickness of the one or more terminals. For example, the terminal has a thickness of 2.5mm, and the reinforcing member completely surrounds the terminal with a thickness of up to 2mm. Therefore, relative to the stacking direction, the thickness combination of the terminal and the reinforcing member surrounded on both sides of the terminal will total 6.5mm.

[0016] According to a further embodiment of the semiconductor power module, the reinforcing member comprises at least one of a chamfer and a rounding and an inclined surface at an edge of the wall facing away from the molded body. Alternatively or additionally, the reinforcing member may comprise a chamfer, a rounding and / or an inclined surface at another edge inside the molded body. In the context of the present disclosure, it was found that the edge structure can beneficially affect the compensation or dissipation of unwanted mechanical stresses and bending forces.

[0017] According to a further embodiment, the semiconductor power module includes two or more terminals that are electrically coupled to the substrate and are at least partially surrounded or covered by the molded body of the housing, so that each terminal is integrally coupled and embedded in the molded body and partially protrudes from the wall of the molded body. Thus, the terminals embedded in the molded body form a molded terminal block. The reinforcement member is configured so that the reinforcement member partially or completely surrounds the terminals at the exit position of the terminals inside the molded body. In this regard, for example, if there are three terminals embedded in the molded body that are adjacent to each other, and if each terminal has a corresponding width of 25 mm, the reinforcement member can continuously cover and / or enclose all three terminals, thereby including a width of 80 mm or more. Therefore, considering the isolation problem, the material of the reinforcement member between two adjacent terminals should include an isolation material.

[0018] According to an embodiment, a method for manufacturing a semiconductor power module includes: providing a substrate and at least one terminal electrically coupled to the substrate. The method further includes: providing a reinforcing member, the reinforcing member including a material different from the material of the at least one terminal; and providing a housing having a molded body and coupling the housing to the substrate, the reinforcing member and the at least one terminal, so that the molded body surrounds the substrate, the reinforcing member and the at least one terminal. The material of the reinforcing member is also different from the material of the molded body. The at least one terminal is integrally coupled and at least partially embedded in the molded body and partially protrudes from the wall of the molded body.

[0019] The reinforcement member is mechanically coupled to the at least one terminal and is at least partially integrally coupled and embedded in the molded body at a position or region where the at least one terminal protrudes from a wall of the molded body.

[0020] Due to this, the described method enables the manufacture of the aforementioned embodiments of the semiconductor power module, the described features and characteristics of the semiconductor power module are also disclosed for the manufacturing method, and vice versa. Therefore, the present disclosure comprises several aspects, wherein each feature described with respect to one of these aspects is also disclosed herein with respect to another aspect, even if the corresponding feature is not explicitly mentioned in the context of a particular aspect.

[0021] According to an embodiment of the method, the step of providing a reinforcing member and coupling it to the at least one terminal comprises: forming the reinforcing member on one or more surfaces of the at least one terminal by means of, for example, molding, coating and / or printing. Alternatively or additionally, the method comprises: providing a reinforcing member having prefabricated elements; and attaching the reinforcing member to the at least one terminal by means of, for example, clamping, gluing and / or welding and / or any other applicable joining process.

[0022] The described configuration of the terminals and reinforcing members embedded in the molded body enables the reduction of local stresses in the molded body near the corresponding terminals in the event of bending or deformation of the terminals during installation and / or operation of the power module. This is achieved by an additional reinforcing member arranged at the associated terminal and / or around the associated terminal at the end of the terminal embedding portion, where the terminal penetrates the side wall of the molded body. The reinforcing member is embedded in the molded body (except when facing outward) so that the outer surface can be flush with the side wall of the molded body, or the outer surface can partially extend outside the molded body.

[0023] The reinforcing member is made of a material different from that of the power terminal or the auxiliary terminal. Depending on the intended application, the material of the reinforcing member may be a soft and elastic material (e.g., rubber) to provide flexibility and sealing from moisture and / or harmful gases even in the case of more severe bending of the terminal. Alternatively, the reinforcing member may be made of a hard resin with specified mechanical properties. Other hard materials, such as metals or hard inorganic materials, are also contemplated.

[0024] The described configuration achieves advantages in particular with regard to semiconductor power modules forming relatively large molded power packages, wherein one or more reinforcement members are arranged on one or more terminals. In particular for relatively thick power terminals, a high tolerance compensation is provided for bending or deformation of the terminals accompanying the mounting of the terminals to a busbar structure of, for example, an inverter. Despite the fact that relatively high mechanical forces also act on the embedded terminal parts, crack formation inside the molded body can be prevented or reduced, at least due to the compensated or dissipated mechanical and / or thermomechanical stresses. The described configuration further allows compensation for vibrations and any other mechanical shocks during operation.

[0025] For example, the described configuration of the semiconductor power module can be used in an electric transportation product. Alternatively or additionally, the semiconductor power module can also be used in a product (e.g., an electric transportation product) implemented as a large molded power package, or in a power module housing or terminal block, where relatively thick terminals are embedded in any kind of resin material. Further uses of the molded power package are also possible. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Exemplary embodiments are explained below with the aid of schematic drawings and reference numerals. The drawings show:

[0027] Figure 1 An embodiment of a semiconductor power module is shown in a schematic side view;

[0028] Figure 2-8 An embodiment of a semiconductor power module is shown in different views;

[0029] Fig. 9 The steps of a method for manufacturing an embodiment of a semiconductor power module are shown, and

[0030] Fig.10 A flow chart of a method for manufacturing an embodiment of a semiconductor power module is shown. DETAILED DESCRIPTION

[0031] The accompanying drawings are included to provide further understanding. It will be understood that the embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale. The same reference numerals designate elements or components having the same function. As long as an element or component corresponds to one another in different figures in terms of its function, its description will not be repeated for each of the following figures. For clarity, an element may not appear with a corresponding reference symbol in all figures.

[0032] Figure 1 An embodiment of a semiconductor power module 10 for a semiconductor device is illustrated in a perspective view. According to a further embodiment, the semiconductor power module 10 may include Figure 1 The semiconductor power module 10 comprises a substrate 4 and four main terminals or power terminals 2 electrically coupled to the substrate 4 (see Figure 6-9 ). There may also be one or more auxiliary terminals which are typically thinner and narrower than the power terminal 2 . According to alternative embodiments, the semiconductor power module 10 may comprise only one terminal 2 or two or more terminals 2 .

[0033] The semiconductor power module 10 further includes a reinforcing member 3 including a material different from that of the terminal 2 (see Figure 2-9 ). The semiconductor power module 10 further includes a housing implemented as or including a molded body 1. The molded body 1 partially or completely surrounds the substrate 4, the reinforcement member 3 and the at least one terminal 2, so that the terminal 2 is integrally coupled and embedded in the molded body 1 and partially protrudes from the wall 5 of the molded body 1 (see Figure 2-9 The reinforcing member 3 is also made of a material different from the encapsulated molded body 1. The reinforcing member 3 is mechanically coupled to the terminal 2 so that the reinforcing member is at least partially integrally coupled and embedded in the molded body 1 at a location or region where the terminal 2 protrudes from the wall 5 of the molded body 1.

[0034] As attached below Figure 2-10 As explained, the semiconductor power module 10 is feasible due to enhanced stability and achieves reliable operation even for high voltage power module applications and even for large-sized terminals and modules, and the risk of crack formation in critical areas (particularly in critical areas where the terminals 2 are exposed from the molded body 1) during installation and operation of the semiconductor power module 10 is reduced.

[0035] Figure 2 An embodiment of a semiconductor power module 10 is illustrated with a view onto the wall 5 along the lateral direction B. The wall 5 of the molded body 1, from which the terminals 2 protrude, can form side walls ( Figure 1 and Figure 6-9 ). The lateral directions B and C realize horizontal directions and are related to the main extension plane of the semiconductor power module, while the stacking direction A realizes a vertical direction perpendicular to the lateral directions B and C, such as Figure 1-8 As shown in the figure.

[0036] According to Figure 2 In the embodiment shown in FIG. 1 , the terminal 2 is completely surrounded by the reinforcement member 3 with respect to the illustrated lateral direction C and the stacking direction A. This also applies to Figure 3 In the embodiment shown in FIG. 1 , three terminals 3 are embedded in a molded body 1 protruding in a lateral direction B in a manner spaced apart and adjacent to each other. The terminals 3 and the molded body 1 may form a terminal structure or a terminal block and may implement a part of a housing of the semiconductor power module 10 .

[0037] The reinforcement member 3 is configured such that the reinforcement member completely surrounds each terminal 2 relative to the illustrated lateral direction C and stacking direction A. In this regard, the reinforcement member 3 should be made of or include an insulating material to prevent unwanted electrical connection between the terminals 2. Alternatively, for example, three terminals 2 may be individually surrounded by the reinforcement member 3, such as Figure 2 and Figure 4 As indicated in .

[0038] Figure 4 A further embodiment of a semiconductor power module 10 is shown, wherein the terminal 2 is partially surrounded by a reinforcement member 3 with respect to the illustrated lateral direction C and the stacking direction A. The reinforcement member 3 is arranged directly on the top side and on both lateral sides of the terminal 2 .

[0039] Figure 5 A further embodiment of a semiconductor power module 10 is shown, in which three terminals 2 are covered at their top and bottom sides with respect to the illustrated lateral direction C and stacking direction A by a reinforcing member 3. The reinforcing member 3 comprises a first reinforcing element 31 and a second reinforcing element 32, which may form two separate plate-like elements or a common continuous U-shaped element with respect to the stacking direction A and the lateral direction B.

[0040] Figure 6-9 An embodiment of the semiconductor power module 10 is illustrated in a corresponding cross-sectional view along the lateral direction C onto a plane spanned by the lateral direction B and the stacking direction A. The reinforcement member 3 may be configured to be flush with the outer surface of the side wall 5 (see Figure 6), or it may protrude from the side wall 5 (see Figure 7 ).

[0041] Figure 7 It is further illustrated that the reinforcing member 3 may include a chamfered or rounded or inclined surface 33 at the edge of the side wall 5 facing away from the molded body 1 and / or at any other edge inside the molded body 1. Such edge structures can beneficially affect the compensation or dissipation of unwanted mechanical stresses and bending forces acting on the molded body 1.

[0042] Figure 8 The terminal 2 is shown to include a recess or thinned area 21 to further reduce stress and / or improve fixation of the reinforcing element 3, and the reinforcing member 3 can be configured in coordination with the terminal 2 so that the reinforcing member is engaged in the recess or thinned area 21. For example, in order to better release stress, the thinned area 21 on the terminal 2 and the reinforcing element 3 can protrude from the molded body 1.

[0043] Fig. 9 Possible manufacturing steps are illustrated to form the semiconductor power module 10. The steps of the corresponding manufacturing method may be followed as follows: Fig.10 In step S1 , a substrate 4 and at least one terminal 2 are provided, wherein the terminal 2 is electrically coupled to the substrate 4 .

[0044] In step S2, a reinforcing member 3 is provided and attached to the terminal 2 at a predetermined position. For example, the reinforcing member is formed on one or more surfaces of the terminal 2 by means of molding, coating and / or printing. Alternatively or additionally, one or more prefabricated elements are provided to the reinforcing element, and the reinforcing member can be attached to the terminal 2 by means of clamping, gluing and / or welding or any other applicable joining method.

[0045] In step S3, a housing having a molded body 1 is provided and coupled to the substrate 4, the reinforcing member 3 and the terminal 2, so that the molded body 1 surrounds the substrate 4, the reinforcing member 3 and at least partially surrounds the terminal 2. For example, step S3 may include: providing a molding substance as a raw material to form the molded body 1 by means of transfer molding or injection molding. The molding substance may be a thermoplastic resin or a thermosetting resin or any other resin material. The material may include fillers such as particles or fibers.

[0046] Therefore, a molded body 1 is formed around the substrate 4, the reinforcing member 3 and the terminal 2, so that the terminal 2 is integrally coupled and embedded in the molded body 1 and partially protrudes from the side wall 5. The reinforcing member 1 is mechanically coupled to the terminal 2 and is integrally coupled and embedded in the molded body 1 at a position or area where the terminal 2 protrudes from the side wall 5.

[0047] The semiconductor power module 10 implements a molded power package in which the molded body 1 forms an encapsulation in which the one or more terminals 2 are partially embedded. The reinforcement member 3 is arranged at or near the end portion of the embedded section of the terminal 2 adjacent to the side wall 5 of the molded body 1.

[0048] For example, the reinforcing member 3 forms an additional element to the associated terminal 2, which is made of a material different from the material of the terminal 2 prepared around the complete cross-section of the terminal 2. The material of the reinforcing member 3 is also different from the material of the molded body 1. Alternatively, it is also possible to arrange the reinforcing member 3 only on one or two or three surfaces (e.g., the top surface and the bottom surface) of the terminal 2. The additional reinforcing member 3 can be prepared by an additional molding or forming step using a rubber or resin material, but can also be prepared by any other method (e.g., coating or printing). The molded body 1 can be transfer molded or injection molded using epoxy resin to form an encapsulation for the entire packaging structure.

[0049] When forces are exerted on the outer part of the terminal 2 (e.g. due to welding, screw connection or other fixing methods), the reinforcement member 3 contributes to reducing the mechanical stress in the hard and brittle epoxy resin molded body 1 near the corresponding terminal 2. In addition, it can compensate for mechanical stresses caused by vibration or thermal shock during operation. Therefore, when the semiconductor power module 10 is installed in a customer application (e.g., an inverter), a certain tolerance compensation is obtained without cracks in the molded body 1 or at least reducing the cracks in the molded body.

[0050] Another way to make the reinforcing member 3 is to place the terminal 2 in a molding tool so that the reinforcing member is embedded in the molded body 1 leaving a cavity in the end portion. The cavity can then be filled with a raw material forming the reinforcing member 3.

[0051] The rounded corners or chamfers or angled side surfaces 33 of the reinforcement member 3 can facilitate a mechanically improved design. The rounded corners or chamfers 33 can be introduced to provide improved stress reduction at critical locations at the interface between the terminal 2 and the molded body 1 (e.g., immediately adjacent to the embedded end of the reinforcement member 3) (see Figure 7 Alternatively or additionally, the terminal 2 may have a thinned portion or region 21 in the region of the reinforcing member 3, which provides a further reduction of internal stresses and may also provide an improved fixation of the reinforcing member 3, especially when a relatively soft and elastic material is selected for the reinforcing member 3 (see Figure 8 ).

[0052] like Figure 1 , Figure 3 and Figure 5As shown in , there may be several terminals 2 adjacent to each other (e.g., in a lead frame arrangement), and there is an opportunity to embed two or more adjacent terminals 2 in a common reinforcement member 3 during the formation of a terminal block. In view of such a design, the reinforcement member 3 is made of an electrically isolating material.

[0053] The reinforcing member can be made of any suitable material that is different from the material of the corresponding terminal 2 and the molded body 1. The material selection depends on the purpose of use of the reinforcing member. The material can be a soft and / or elastic material, for example, a Young's modulus lower than that of the molded body, so as to provide not only high flexibility but also improved sealing from moisture or harmful gases even when the terminal 2 is strongly bent. Alternatively or additionally, the material can be a hard material with a high elastic modulus, for example, a Young's modulus higher than that of the molded body, such as a hard resin, a metal or another hard organic or inorganic material. In general, the suitability of a material for the reinforcing member 3 depends on its elasticity or Young's modulus relative to the purpose of use.

[0054] Considering the displacement causing the bending of the terminal 2 at the outer tip of the terminal 2, the resulting mechanical stress is compensated or dissipated in different ways, depending on the elasticity or Young's modulus of the material of the reinforcing member 3. For example, the rubber material can have an elastic modulus varying between 10 MPa and 100 MPa. Considering relatively soft materials with an elastic modulus below 1 MPa, there may be a small effect on the stress conditions in the molded body 1 in the vicinity of the terminal 2, especially relative to the maximum stress in the molded body 1 in the vicinity of the terminal 2 and the reinforcing member 3. An improved configuration can be set by extending the bending length of the terminal 2, wherein the maximum stress is transferred from the position of the proximal edge of the molded body 1 toward the interior of the module in the vicinity of the inner interface between the reinforcing member 3 and the molded body 1. In addition, a reliable seal is provided even in the case of strong bending of the terminal 2.

[0055] Further, when the elastic modulus of the material of the reinforcing member 3 exceeds 1 MPa, a beneficial configuration can be achieved that takes into account stress conditions (especially relative to the maximum stress in the molded body 1). Then, as the elastic modulus of the reinforcing material increases, the stress in the molded body 1 near the terminal can be significantly reduced and distributed.

[0056] A further improvement in the stress situation can be achieved when a rigid material with a relatively high elastic modulus is used, such as a hard resin, a metal or another hard material for insulation, for example the reinforcement member 3 is made of steel with an elastic modulus of 200 GPa. Thus, the mechanical stress can be mostly absorbed inside the reinforcement member 3 and kept away from the epoxy resin molded body 1. As a result, almost no stress is transmitted to the brittle molded body 1 due to the steel reinforcement member 3, while a higher stress level occurs inside the reinforcement member 3.

[0057] The described and illustrated configuration is particularly suitable for large transfer molded power packages with relatively thick terminals 2, for example with a thickness of up to 12 mm relative to the stacking direction A. Nevertheless, the described and illustrated configuration can also be used for other applications in which one or more terminals 2 are embedded in a resin material, as is the case in a frame or cover of an epoxy or gel-filled power module or in a terminal block. The terminals 2 can be embedded in a body, for example made of a fiber-reinforced thermoplastic or thermosetting resin material, which is prepared by transfer molding or injection molding.

[0058] As stated Figures 1 to 9 The embodiments shown in the Figures represent exemplary embodiments of the improved semiconductor power module 10 and methods of manufacturing the same; therefore, they do not constitute a complete list of all embodiments. For example, the actual arrangement and method may differ from the embodiments shown in terms of the metal substrate structure and the power module.

[0059] Reference numerals

[0060] 1 molded body

[0061] 2 terminals

[0062] 21 Thinning area of ​​terminal

[0063] 3 Strengthening components

[0064] 31 First reinforcement element

[0065] 32 Second reinforcement element

[0066] 33 Chamfer / rounded part of reinforcement member

[0067] 4 Substrate

[0068] 5 Sidewall

[0069] 10 Semiconductor power module

[0070] AStacking direction

[0071] B Lateral direction

[0072] C Lateral direction

[0073] S(i) Steps of a method for manufacturing a semiconductor power module

Claims

1. A semiconductor power module (10), comprising: - a substrate (4) and at least one terminal (2) electrically coupled to said substrate (4), - a reinforcement member (3) comprising a material different from the material of the at least one terminal (2), and - A shell, the shell having a molded body (1) surrounding the substrate (4), the reinforcing member (3) and the at least one terminal (2), so that the at least one terminal (2) is integrally coupled and embedded in the molded body (1) and partially protrudes from the wall (5) of the molded body (1), wherein the reinforcing member (3) is mechanically coupled to the at least one terminal (2) so that the reinforcing member is at least partially integrally coupled and embedded in the molded body (1) at a position where the at least one terminal (2) protrudes from the wall (5) of the molded body (1).

2. The semiconductor power module (10) according to claim 1, wherein: The reinforcement member (3) is configured such that the reinforcement member completely surrounds the at least one terminal (2).

3. The semiconductor power module (10) according to any one of the preceding claims, wherein: The reinforcing member (3) is formed by at least one of molding, coating and printing.

4. The semiconductor power module (10) according to any one of the preceding claims, wherein: The reinforcement member (3) is formed by a prefabricated element which is attached to the at least one terminal by at least one of clamping, gluing and welding.

5. The semiconductor power module (10) according to any one of the preceding claims, wherein: The reinforcing member (3) is formed with a given material, thickness, width and / or depth coordinated with the material, thickness and / or width of the at least one terminal (2).

6. The semiconductor power module (10) according to any one of the preceding claims, wherein: The material of the reinforcing member (3) has an elastic modulus of 10-100 MPa.

7. The semiconductor power module (10) according to any one of the preceding claims, wherein: The material of the reinforcing member (3) includes at least one of rubber and resin.

8. The semiconductor power module (10) according to any one of the preceding claims, wherein: The material of the reinforcing member (3) includes metal.

9. The semiconductor power module (10) according to any one of the preceding claims, wherein: Relative to a lateral direction (B) of the semiconductor power module (10), the reinforcement member (3) comprises a depth having a value of 5-25 mm.

10. The semiconductor power module (10) according to any one of the preceding claims, wherein: With respect to a stacking direction (A) of the semiconductor power module (10) perpendicular to the lateral directions (B, C), the reinforcement member (3) comprises a thickness having a value of 0.5-2.5 mm.

11. The semiconductor power module (10) according to any one of the preceding claims, wherein: The reinforcing member (3) comprises at least one of a chamfer, a rounding and an inclined surface (33) at an edge of the wall (5) facing away from the molded body (1).

12. A semiconductor power module (1) according to any one of the preceding claims, comprising two or more terminals (2), the two or more terminals being electrically coupled to the substrate (4) surrounded by the molded body (1) of the housing, so that the terminals (2) are integrally coupled and at least partially embedded in the molded body (1) and partially protrude from the wall (5) of the molded body (1), wherein The reinforcement member (3) is configured such that the reinforcement member partially or completely surrounds the terminal (2).

13. A method for manufacturing a semiconductor power module (10), comprising: - providing a substrate (4) and at least one terminal (2) electrically coupled to the substrate (4), - providing a reinforcement member (3) comprising a material different from the material of the at least one terminal (2), and -Providing a shell having a molded body (1) and coupling the shell to the substrate (4), the reinforcing member (3) and the at least one terminal (2), so that the molded body (1) partially surrounds the substrate (4), the reinforcing member (3) and the at least one terminal (2), and the at least one terminal (2) is integrally coupled and embedded in the molded body (1) and partially protrudes from the wall (5) of the molded body (1), wherein the reinforcing member (3) is mechanically coupled to the at least one terminal (2) and is at least partially integrally coupled and embedded in the molded body (1) at a position where the at least one terminal (2) protrudes from the wall (5) of the molded body (1).

14. The method according to claim 13, wherein: Providing the reinforcement member (3) and coupling the reinforcement member to the at least one terminal (2) comprises: The reinforcing member (3) is formed on one or more surfaces of the at least one terminal (2) by means of at least one of molding, coating and printing.

15. The method according to claim 13, wherein: Providing the reinforcement member (3) and coupling the reinforcement member to the at least one terminal (2) further comprises: - positioning said at least one terminal (2) inside a moulding tool so as to provide a cavity for forming said reinforcing member (3), - forming the reinforcement member (3) by means of moulding to the terminal (2) inside the provided cavity, and - The molded body (1) is formed by means of molding to the terminal (2) and / or molding to the reinforcement member (3).

16. The method according to any one of claims 13 to 15, wherein: Providing the reinforcement member (3) and coupling the reinforcement member to the at least one terminal (2) comprises: - providing said reinforcing member (3) with prefabricated elements, - attaching the reinforcement member (3) to the at least one terminal (2) by means of at least one of clamping, gluing and welding.

17. A method according to any one of claims 13 to 16, comprising: - providing said at least one terminal (2) without a reinforcement member (3), - forming the molded body (1) around the at least one terminal (2) so that a cavity exists around the at least one terminal (2), and - filling the cavity around the at least one terminal (2) by at least one of a filling, a material injection using a nozzle and a molding process.

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