Plasma processing apparatus

Abstract

Provided is a technique capable of adjusting the thickness distribution of an ion sheath. The plasma processing apparatus of the present disclosure comprises: a plasma processing chamber; a substrate supporting part which is configured in the plasma processing chamber; an antenna disposed above the plasma processing chamber; a source RF signal generation unit electrically connected to the antenna and configured so as to be able to generate a source RF signal; a bias signal generation unit which is electrically connected to the substrate support unit and is configured so as to be able to generate a bias signal; an upper electromagnet unit disposed above the antenna and having a plurality of upper annular electromagnets arranged in a concentric circle; a side wall electromagnet unit disposed so as to surround the side wall of the plasma processing chamber, the side wall electromagnet unit having a plurality of side wall ring-shaped electromagnets arranged in the longitudinal direction; an electromagnet excitation circuit configured so as to be able to supply a current to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets; and a control unit configured so as to be able to control a plasma electron density distribution in the plasma processing chamber by adjusting a current supplied to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a plasma processing apparatus. Background Art

[0002] As a technique for appropriately controlling the ratio of ions and radicals reaching a target object, there is a plasma processing apparatus described in Patent Document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent document 1: Japanese Patent Application Publication No. 2018-98094. Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of adjusting the thickness distribution of an ion sheath layer.

[0008] Technical means of solving problems

[0009] In an exemplary embodiment of the present disclosure, a plasma processing apparatus is provided, comprising: a plasma processing chamber; a substrate support portion arranged in the plasma processing chamber; an antenna arranged above the plasma processing chamber; a source RF signal generating portion electrically connected to the antenna and configured to generate a source RF signal; a bias signal generating portion electrically connected to the substrate support portion and configured to generate a bias signal; an upper electromagnet unit arranged above the antenna and having a plurality of upper annular electromagnets arranged in concentric circles; a side wall electromagnet unit arranged in a manner surrounding the side wall of the plasma processing chamber and having a plurality of side wall annular electromagnets arranged in a longitudinal direction; an electromagnet excitation circuit configured to supply current to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets; and a control portion configured to adjust the current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets to control the plasma electron density distribution in the plasma processing chamber.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment of the present disclosure, a technology capable of adjusting the thickness distribution of an ion sheath layer can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0013] Figure 2It is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0014] Figure 3 This is a diagram showing an example of the upper surface of the substrate supporting portion 11.

[0015] Figure 4 This is a diagram showing an example of a cross section of the substrate supporting portion 11 .

[0016] Figure 5 1 is a block diagram showing an example of the structure of the control circuit board 80 .

[0017] Figure 6 1 is a flow chart showing an example of a plasma processing method according to an exemplary embodiment.

[0018] Figure 7 This is a flowchart showing an example of step ST1.

[0019] Figure 8 FIG. 1 is a timing diagram showing an example of a source RF signal, current U, and current S. FIG.

[0020] Fig. 9 This is a flowchart showing an example of step ST3. DETAILED DESCRIPTION

[0021] Hereinafter, each embodiment of the present disclosure will be described.

[0022] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes: a plasma processing chamber; a substrate support portion disposed in the plasma processing chamber; an antenna disposed above the plasma processing chamber; a source RF signal generating portion electrically connected to the antenna and configured to generate a source RF signal; a bias signal generating portion electrically connected to the substrate support portion and configured to generate a bias signal; an upper electromagnet unit disposed above the antenna and having a plurality of upper annular electromagnets arranged in concentric circles; a side wall electromagnet unit disposed in a manner surrounding a side wall of the plasma processing chamber and having a plurality of side wall annular electromagnets arranged in a longitudinal direction; an electromagnet excitation circuit configured to supply current to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets; and a control portion configured to adjust the current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets to control the plasma electron density distribution in the plasma processing chamber.

[0023] In an exemplary embodiment, the plurality of upper annular electromagnets include: a first upper annular electromagnet; a second upper annular electromagnet configured to surround the first upper annular electromagnet; a third upper annular electromagnet configured to surround the second upper annular electromagnet; and a fourth upper annular electromagnet configured to surround the third upper annular electromagnet.

[0024] In an exemplary embodiment, the plurality of sidewall annular electromagnets include: a first sidewall annular electromagnet; a second sidewall annular electromagnet disposed below the first sidewall annular electromagnet; and a third sidewall annular electromagnet disposed below the second sidewall annular electromagnet.

[0025] In an exemplary embodiment, the substrate support portion includes a plurality of heaters, and the control portion is configured to obtain an electric power value supplied to each of the plurality of heaters, and based on the obtained electric power value, adjust the current supplied to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets.

[0026] In an exemplary embodiment, the source RF signal is repeatedly set to a first state having a first electric power level and a second state having a second electric power level smaller than the first electric power level, and the current is repeatedly set to a first state having a first current level and a second state having a second current level smaller than the first current level based on the first state and the second state of the source RF signal.

[0027] In an exemplary embodiment, the first electrical power level is a zero electrical power level and the first current level is a zero current level.

[0028] In one exemplary embodiment, the control unit is configured to be able to adjust the current supplied to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets during the plasma ignition sequence.

[0029] In an exemplary embodiment, it includes: a plasma processing chamber; a substrate support portion arranged in the plasma processing chamber; an antenna arranged above the plasma processing chamber; a source RF signal generating portion, which is electrically connected to the antenna and is configured to generate a source RF signal; a bias signal generating portion, which is electrically connected to the substrate support portion and is configured to generate a bias signal; an upper electromagnet unit, which is arranged above the antenna and has a plurality of upper annular electromagnets arranged in concentric circles; and an electromagnet excitation circuit, which is configured to supply current to at least one of the plurality of upper annular electromagnets.

[0030] In one exemplary embodiment, the plurality of upper annular electromagnets include: a first upper annular electromagnet; and a second upper annular electromagnet disposed so as to surround the first upper annular electromagnet.

[0031] In one exemplary embodiment, the plurality of upper annular electromagnets further include: a third upper annular electromagnet disposed so as to surround the second upper annular electromagnet; and a fourth upper annular electromagnet disposed so as to surround the third upper annular electromagnet.

[0032] In an exemplary embodiment, the substrate support portion includes a plurality of heaters, and the plasma processing device also includes a control portion, which is configured to obtain an electric power value supplied to each of the plurality of heaters and adjust the current supplied to at least one of the plurality of upper annular electromagnets based on the obtained electric power value.

[0033] In an exemplary embodiment, it includes: a plasma processing chamber; a substrate support portion configured in the plasma processing chamber; an antenna configured above the plasma processing chamber; a source RF signal generating portion, which is electrically connected to the antenna and is configured to generate a source RF signal; a bias signal generating portion, which is electrically connected to the substrate support portion and is configured to generate a bias signal; a side wall electromagnet unit, which is configured in a manner to surround the side wall of the plasma processing chamber and has a plurality of side wall annular electromagnets arranged in the longitudinal direction; and an electromagnet excitation circuit, which is configured to supply current to at least one of the plurality of side wall annular electromagnets.

[0034] In one exemplary embodiment, the plurality of sidewall ring-shaped electromagnets include: a first sidewall ring-shaped electromagnet; and a second sidewall ring-shaped electromagnet disposed so as to surround the first sidewall ring-shaped electromagnet.

[0035] In one exemplary embodiment, the plurality of side wall annular electromagnets further include: a third side wall annular electromagnet disposed so as to surround the second side wall annular electromagnet; and a fourth side wall annular electromagnet disposed so as to surround the third side wall annular electromagnet.

[0036] In an exemplary embodiment, the substrate support portion includes a plurality of heaters, and the plasma processing device also includes a control portion, which is configured to obtain an electric power value supplied to each of the plurality of heaters and adjust the current supplied to at least one of the plurality of upper annular electromagnets based on the obtained electric power value.

[0037] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or identical elements in the various drawings, and repeated descriptions are omitted. Unless otherwise specified, the positional relationships such as up, down, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent the actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0038] Figure 1: is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0039] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP; Capacitively Coupled Plasma), an inductively coupled plasma (ICP; Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-resonance plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current) plasma generating unit and a DC (Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Thus, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0040] The control unit 2 is used to process computer executable commands that enable the plasma processing device 1 to perform various processes described in the present disclosure. The control unit 2 can be configured to control the various elements of the plasma processing device 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may also be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program to perform various control actions. The program can be stored in the storage unit 2a2 in advance, or it can be obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media that can be read by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0041] Hereinafter, a configuration example of an inductively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. Figure 2 It is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0042] The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. In addition, the plasma processing apparatus 1 includes a substrate support unit 11, a gas introduction unit, and an antenna 14. The substrate support unit 11 is disposed in the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the side wall 102 of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded.

[0043] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0044] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later may also be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may also function as a plurality of bias electrodes. In addition, the electrostatic electrode 1111b may also function as a bias electrode. Thus, the substrate support portion 11 includes at least one bias electrode.

[0045] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0046] In addition, the substrate support portion 11 may also include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0047] The gas introduction part is configured to be able to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. In one embodiment, the gas introduction part includes a central gas injection part (CGI: Center Gas Injector) 13. The central gas injection part 13 is arranged above the substrate support part 11 and installed at the central opening formed in the dielectric window 101. The central gas injection part 13 has at least one gas supply port 13a, at least one gas flow path 13b and at least one gas introduction port 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the gas introduction port 13c through the gas flow path 13b. In addition, in the gas introduction part, in addition to or instead of the central gas injection part 13, one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 102 may also be included.

[0048] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the respectively corresponding gas source 21 to the gas introduction unit via the respectively corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0049] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. Thus, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying the bias RF signal to at least one bias electrode, a bias potential can be generated on the substrate W, and ions in the formed plasma can be attracted to the substrate W.

[0050] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to the antenna 14 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may also be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0051] The second RF generating unit 31b is coupled to at least one bias electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may also be pulsed.

[0052] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and is configured to generate a bias DC signal. The generated bias DC signal is applied to at least one bias electrode.

[0053] In various embodiments, the bias DC signal may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. In addition, the bias DC generator 32a may be provided together with the RF power supply 31, or may be provided instead of the second RF generator 31b.

[0054] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil disposed on the same axis. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or different RF generators may be connected to the outer coil and the inner coil, respectively.

[0055] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0056] The plasma processing device 1 includes an upper electromagnet assembly 3 and a side wall electromagnet assembly 4. The upper electromagnet assembly 3 and the side wall electromagnet assembly 4 are configured to generate a magnetic field in the chamber 10. The upper electromagnet assembly 3 includes one or more upper electromagnet units 45. In addition, the upper electromagnet assembly 3 includes a coil frame 50. The side wall electromagnet assembly 4 includes one or more side wall electromagnet units 145. In addition, the side wall electromagnet assembly 4 includes a coil frame 150.

[0057] The upper electromagnet assembly 3 is disposed on or above the plasma processing chamber 10. Figure 2 In the example shown, the upper electromagnet assembly 3 is arranged above the antenna 14 .

[0058] The upper electromagnet unit 45 includes electromagnets 46 to 49. Electromagnets 46 to 49 are examples of upper annular electromagnets. Electromagnets 46 to 49 are configured to include coils 61 to 64. Coils 61 to 64 are wound around the central axis Z. The central axis Z can be an axis passing through the center of the substrate W or the substrate support portion 11. That is, in the upper electromagnet assembly 3, coils 61 to 64 can be annular coils. Coils 61 to 64 can be coaxially arranged in the radial direction with the central axis Z as the center at the same height position.

[0059] The upper electromagnet assembly 3 is configured to also include a coil frame 50 (or a yoke). Coils 61 to 64 are wound around the coil frame 50 (or a yoke). The coil frame 50 is formed, for example, of a magnetic material. The coil frame 50 is configured to surround the central gas injection portion 13. The coil frame 50 has a central portion 51, cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a cylindrical shape, and its central axis coincides with the central axis Z. That is, the base portion 56 is formed with an opening in the center, and the center of the opening is roughly consistent with the central axis Z. The central gas injection portion 13 is configured on the inner side of the opening of the base portion 56.

[0060] The central portion 51 and the cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The central portion 51 has a cylindrical shape, and its central axis is substantially consistent with the central axis Z. That is, the central portion 51 is formed with an opening in the center, and the center of the opening is substantially consistent with the central axis Z. The central gas injection portion 13 is arranged inside the opening of the central portion 51. The diameter of the opening of the central portion 51 may be the same as the diameter of the opening of the base portion 56.

[0061] The cylindrical portions 52 to 55 extend radially outside the central portion 51 relative to the central axis Z. The cylindrical portions 52 to 55 are arranged concentrically around the central axis Z. That is, the cylindrical portion 52 is arranged so as to surround the central portion 51 and the coil 61. The cylindrical portion 53 is arranged so as to surround the cylindrical portion 52 and the coil 62. The cylindrical portion 54 is arranged so as to surround the cylindrical portion 53 and the coil 63. The cylindrical portion 55 is arranged so as to surround the cylindrical portion 54 and the coil 64.

[0062] Coil 61 is wound along the outer circumference of central portion 51. Coil 61 is housed in the groove between central portion 51 and cylindrical portion 52. Coil 62 is wound along the outer circumference of cylindrical portion 52. Coil 62 is housed in the groove between cylindrical portion 52 and cylindrical portion 53. Coil 63 is wound along the outer circumference of cylindrical portion 53. Coil 63 is housed in the groove between cylindrical portion 53 and cylindrical portion 54. Coil 64 is wound along the outer circumference of cylindrical portion 54. Coil 64 is housed in the groove between cylindrical portion 54 and cylindrical portion 55.

[0063] The coils 61 to 64 are connected to a current source 65. The current source 65 is an example of an electromagnet excitation circuit. The control unit 2 controls the supply and stop of current from the current source 65 to the coils 61 to 64, and controls the direction and value of the current. The coils 61 to 64 may be connected to a single current source or to different current sources.

[0064] The upper electromagnet unit 45 can form a magnetic field in the chamber 10 that is symmetrical about the central axis Z. By controlling the currents supplied to the coils 61 to 64, the intensity distribution (or magnetic flux density) of the magnetic field can be adjusted in the radial direction relative to the central axis Z. Thus, the plasma processing apparatus 1 can adjust the radial distribution of the density of the plasma generated in the plasma processing chamber 10.

[0065] The side wall electromagnet unit 145 includes electromagnets 146 to 148. Electromagnets 146 to 148 are examples of side wall annular electromagnets. Electromagnets 146 to 148 are configured to include coils 161 to 163. Coils 161 to 163 are wound to surround the plasma processing chamber 10 with the central axis Z as the central axis. Coils 161 to 163 can be annular coils. Coils 161 to 163 are arranged at the same position in the radial direction. That is, coils 161 to 163 can be coaxially arranged in the height direction with the central axis Z as the center.

[0066] The side wall electromagnet assembly 4 is configured to further include a coil frame 150 (or a yoke). Coils 161 to 163 are wound around the coil frame 150 (or a yoke). The coil frame 150 is formed, for example, of a magnetic material. The coil frame 150 is configured to surround the side wall of the plasma processing chamber 10. The coil frame 150 has cylindrical portions 152 to 155 and a base portion 156. The base portion 156 has a cylindrical shape, and its central axis coincides with the central axis Z. That is, the base portion 156 is formed with an opening in the center, and the center of the opening is roughly consistent with the central axis Z. The plasma processing chamber 10 is configured on the inner side of the opening of the base portion 156.

[0067] The cylindrical portions 152 to 155 extend from the inner side of the base portion 156 in the direction of the central axis Z. The cylindrical portions 152 to 155 are arranged at the same positions relative to the central axis Z in the radial direction. That is, the cylindrical portions 152 to 155 are arranged so as to overlap each other in a top view of the plasma processing chamber 10 from above. The cylindrical portion 152 is arranged above the coil 161. The cylindrical portion 153 is arranged below the cylindrical portion 152 and the coil 161. The cylindrical portion 154 is arranged below the cylindrical portion 153 and the coil 162. The cylindrical portion 155 is arranged below the cylindrical portion 154 and the coil 163.

[0068] Coils 161 to 163 are wound along the outer circumference of the side wall of plasma processing chamber 10. Coil 161 is housed in the groove between cylindrical portion 152 and cylindrical portion 153. Coil 162 is housed in the groove between cylindrical portion 153 and cylindrical portion 154. Coil 163 is housed in the groove between cylindrical portion 154 and cylindrical portion 155.

[0069] Coils 161 to 163 are connected to current source 65. Control unit 2 controls supply and stop of current from current source 65 to coils 161 to 163, and controls the direction and value of the current. Coils 161 to 163 may be connected to a single current source or to different current sources.

[0070] The side wall electromagnet unit 145 can form a magnetic field in the chamber 10 that is symmetrical about the central axis Z. By controlling the currents supplied to the coils 161 to 163, the intensity distribution (or magnetic flux density) of the magnetic field can be adjusted in the direction along the central axis Z. Thus, the plasma processing apparatus 1 can adjust the density distribution of the plasma generated in the plasma processing chamber 10 in the thickness direction of the plasma.

[0071] Figure 3 FIG. 1 is a diagram showing an example of the upper surface of the substrate support portion 11. Figure 3 As shown, the substrate support portion 11 includes a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. Figure 3 As shown by the dotted line, the central region 111a includes a plurality of regions 111c. In this embodiment, the temperature adjustment module can control the temperature of the substrate W or the substrate support 11 in units of regions 111c. The number of regions 111c and the area and shape of each region 111c can be appropriately set according to the conditions required for the temperature control of the substrate W.

[0072] Figure 4 This is a diagram showing an example of a cross section of the substrate supporting portion 11 . Figure 4 express Figure 3 A portion of the cross section of the substrate support portion 11 at AA′. Figure 4 As shown in FIG. 1 , the substrate support portion 11 includes an electrostatic chuck 1111, a base 1110, and a control circuit board 80. The electrostatic chuck 1111 includes a plurality of heaters 200 and a plurality of resistors 201 therein. Figure 2In each region 111c shown, a heater 200 and a resistor 201 are arranged inside the electrostatic chuck 1111. In each region 111c, the resistor 201 is arranged near the heater 200. In one example, the resistor 201 can be arranged between the heater 200 and the base 1110, and at a position closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value changes with temperature. In one example, the resistor 201 can be a thermistor.

[0073] The base 1110 has one or more through holes 90 extending from the upper surface (the surface opposite to the electrostatic suction cup 1111) of the base 1110 to the lower surface (the surface opposite to the control circuit board 80). The plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control circuit board 80 via the through holes 90. In the present embodiment, a connector 91 is embedded at one end of the upper surface side of the through hole 90, and a connector 92 is embedded at one end of the lower surface side of the through hole 90. The connector 91 is electrically connected to the plurality of heaters 200 and the plurality of resistors 201. The plurality of heaters 200 and the plurality of resistors 201 can be connected to the connector 91, for example, via wiring arranged inside the electrostatic suction cup 1111. The connector 92 is electrically connected to the control circuit board 80. In addition, a plurality of wirings 93 that electrically connect the connector 91 to the connector 92 are arranged in the through hole 90. Thus, the plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control circuit board 80 via the through-holes 90. In addition, the connector 92 can also function as a supporting member for fixing the control circuit board 80 to the base 1110.

[0074] The control circuit board 80 is a circuit board configured with elements for controlling the plurality of heaters 200 and / or the plurality of resistors 201. The control circuit board 80 can be arranged opposite to and parallel to the lower surface of the base 1110. The control circuit board 80 can be arranged to be surrounded by a conductive member. The control circuit board 80 can also be supported on the base 1110 by a supporting member other than the connector 92.

[0075] The control circuit board 80 can be electrically connected to the power supply unit 70 via the wiring 73. That is, the power supply unit 70 can be electrically connected to the plurality of heaters 200 via the control circuit board 80. The power supply unit 70 generates electric power to be supplied to the plurality of heaters 200. Thus, the electric power supplied from the power supply unit 70 to the control circuit board 80 can be supplied to the plurality of heaters 200 via the connector 92, the wiring 93, and the connector 91. In addition, an RF filter for reducing RF may be disposed between the power supply unit 70 and the control circuit board 80. The RF filter may be provided outside the plasma processing chamber 10.

[0076] In addition, the control circuit board 80 can be connected to the control unit 2 via the wiring 75 so as to be communicable. The wiring 75 may be an optical fiber. In this case, the control circuit board 80 communicates with the control unit 2 through optical communication. In addition, the wiring 75 may also be a metal wiring.

[0077] Figure 5 1 is a block diagram showing an example of the structure of the control circuit board 80. The control circuit board 80 is provided with a control unit 81, a plurality of supply units 82 as an example of components, and a plurality of measurement units 83. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0078] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83 and supplies it to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated based on the resistance value of the resistor 201 into a digital signal and output it to the control unit 81.

[0079] <An example of plasma treatment method>

[0080] Figure 6 1 is a flow chart showing a plasma treatment method according to an exemplary embodiment (hereinafter also referred to as “the present treatment method”). Figure 6 As shown in FIG. 1 , the processing method includes a step (ST1) of generating a table, a step (ST2) of performing plasma processing on a first substrate, and a step (ST3) of performing plasma processing on a second substrate. The processing in each step can be performed in Figure 1 Hereinafter, as an example, the control unit 2 controls each unit of the plasma processing apparatus 1 to execute the processing method.

[0081] (Step ST1: Table Creation)

[0082] Figure 7 1 is a flowchart showing an example of step ST1. The table generated in step ST1 may be a table in which the change amount of one or more parameters related to plasma generation and the change amount of the distribution of ion flux generated by the change amount are associated and stored. The ion flux is the ion flux generated between the substrate W arranged on the substrate support part 11 and the plasma generated in the plasma processing chamber 10. In addition, the ion flux may include the ion flux generated between the ring assembly 112 and the plasma generated in the plasma processing chamber 10.

[0083] In one example, the parameter may be a parameter such as the magnetic flux density of the magnetic field applied to the plasma processing chamber 10, which can change the distribution of the electron density generated in the plasma processing chamber 10. Figure 2 The current and / or voltage of the coils 61 to 64 included in the upper electromagnet unit 45 and / or the coils 161 to 163 included in the side wall electromagnet unit 145.

[0084] That is, in the table generated in step ST17, the parameter stored in association with the change in ion flux may be the change in magnetic flux density of the magnetic field applied to the plasma, or the change in current and / or voltage supplied to the electromagnet generating the magnetic field. Here, when the temperature of the substrate W is constant, the ion flux Γ generated between the substrate W and the plasma is i The electron density in the plasma can have a relationship based on the following equation.

[0085] 「 i ∝n e ×(Vdc) 1 / 2 Formula (1)

[0086] Here, n e is the electron density in the plasma (m -3 ). In addition, Vdc is a bias voltage (V) generated between the substrate W and the plasma. In addition, the electron density in the plasma and the magnetic flux density of the magnetic field applied to the plasma can have a relationship based on the following formula.

[0087] n e ∝H Formula (2)

[0088] Here, H is the magnetic flux density (G). Thus, the distribution of the magnetic flux density applied to the plasma can be changed, so that the distribution of the ion flux generated between the plasma and the substrate W can be changed. In this way, in step ST1, as an example, the control unit 2 can generate a table in which the change amount of the distribution of the magnetic flux density of the magnetic field applied to the plasma is associated with the change amount of the distribution of the ion flux.

[0089] In addition, the thickness S of the ion sheath and the electron density in the plasma can have a relationship based on the following formula.

[0090]

[0091] Here, ε0 is the dielectric constant of vacuum, T e is the electron temperature, e is the elementary charge, and Vdc is the bias voltage. Thus, by controlling the electron density in the plasma, the thickness of the ion sheath can be controlled. Furthermore, by controlling the distribution of the thickness of the ion sheath, the incident angle of the ion flux relative to the substrate can be controlled.

[0092] (Step ST2: Plasma Treatment of First Substrate)

[0093] Figure 7 1 is a flow chart showing an example of step ST2. In step ST2, a first substrate is subjected to plasma treatment. The first substrate may be a substrate on which a semiconductor element is formed. In addition, the plasma treatment may include a plasma etching treatment for forming a semiconductor element on the first substrate.

[0094] like Figure 7 As shown, step ST2 includes a step of arranging the first substrate (step ST21), a step of setting the temperature of the first substrate (step ST22), a step of generating plasma (step ST23), a step of acquiring the supplied electric power of each heater (step ST24), a step of calculating the first distribution data (step ST25), and a step of calculating the correction value (step ST26). In one example, step ST2 can be performed to correct the temporal change of the plasma processing apparatus 1.

[0095] First, in step ST21, the first substrate is arranged on the substrate support part 11. Then, in step ST22, the temperature of the first substrate is set. In one example, the control part 2 controls the control part 81 arranged on the control circuit board 80 so that the temperature of the first substrate in each area 111c becomes the set temperature. In addition, the control part 2 obtains the electric power supplied to each heater 200 and stores it in the storage part 2a when the temperature of the first substrate is stable at the set temperature.

[0096] After the temperature of the first substrate is stabilized at the set temperature, in step ST23, plasma is generated in the plasma processing chamber 10, and the first substrate is subjected to plasma processing. In one example, in step ST23, first, a processing gas is supplied from the gas supply unit 20 to the plasma processing chamber 10. Next, when the source RF signal is supplied to the antenna 14, plasma is generated from the processing gas in the plasma processing space 10s. In addition, a current is supplied from the current source 65 to at least one of the coils 61 to 64 and the coils 161 to 163, so that a magnetic field can be formed in the plasma processing space 10s.

[0097] The source RF signal supplied to the antenna 14 may be a pulse wave that periodically includes electric power pulses. That is, the source RF signal may be a pulse wave that repeatedly exists in a first state with a high electric power level and a second state with an electric power level lower than the first state. The electric power level may be, for example, an effective value of the electric power of the source RF signal.

[0098] The current supplied from the current source 65 to the coils 61 to 64 of the upper electromagnet unit 45 (hereinafter also referred to as "current U") and the current supplied from the current source 65 to the coils 161 to 163 of the side wall electromagnet unit 145 (hereinafter also referred to as "current S") can each be a pulse wave that periodically includes current pulses. That is, the current U and the current S can each be a pulse current that repeatedly exists in a first state with a high current level and a second state with a current level lower than the first state. The current levels of the currents supplied to the coils 61 to 64 can be different current levels. In addition, the current levels of the currents supplied to the coils 161 to 163 can be different current levels.

[0099] Figure 8 is a timing diagram showing an example of the source RF signal, current U and current S. Figure 8 , the vertical axis represents the electric power level of the source RF signal and the current levels of the current U and the current S. In addition, the horizontal axis represents time.

[0100] exist Figure 8 In the example shown, the source RF signal is a pulse wave having a repetition period (cycle) T1. The repetition period T1 includes a period T1a in which the power level of the source RF signal is H1 and a period T1b in which the power level of the source RF signal is L1 which is lower than H1. The power level L1 can be a zero power level.

[0101] In addition, Figure 8 In the example shown, the current U is a pulse wave having a repetition period (cycle) T2. The repetition period T2 includes a period T2a during which the current level of the current U is H2 and a period T2b during which the current level of the current U is L2 which is lower than H2. In addition, the current S is a pulse wave having a repetition period (cycle) T3. The repetition period T3 includes a period T3a during which the current level of the current S is H3 and a period T3b during which the current level of the current S is L3 which is lower than H3. The current source 65 can adjust the current levels of the current U and the current S according to the coil of the supply destination. The current levels L2 and L3 can be zero current levels.

[0102] In one embodiment, the lengths of period T2 and period T3 are equal to the length of period T1. In this case, the source RF signal has an electric power level H1 in the first period T1a within each period T1 of the plurality of periods, and has an electric power level L1 in the second period T1b within each period T1. In addition, the current U has a current level H2 in the first period T1a (=T2a) within each period T1 (=T2), and has a current level L2 in the second period T1b (=T2b) within each period T1 (=T2). In addition, the current S has a current level H3 in the first period T1a (=T3a) within each period T1 (=T3), and has a current level L3 in the second period T1b (=T3b) ​​within each period T1 (=T3). In addition, the moment when a current pulse appears in the current U can be synchronized with the moment when an electric power pulse appears in the source RF signal. In addition, the moment when a current pulse appears in the current S can be synchronized with the moment when an electric power pulse appears in the source RF signal. Figure 8 In the example shown, the time when the electric power pulse appears in the source RF signal is roughly consistent with the time when the current pulse appears in the current U and the current S.

[0103] In one embodiment, the current level of the current U and / or the current S can be adjusted in the plasma ignition sequence. In one example, the plasma ignition sequence can be an action sequence that includes the supply of the source RF signal, the frequency matching in the RF generation section 31, and / or the impedance matching in the matching circuit coupled to the RF generation section 31.

[0104] Then, in Figure 7 In the step ST24 shown, the electric power supplied to the plurality of heaters 200 is acquired. In the steps ST23 and ST24, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the first substrate in each region 111c becomes the set temperature. Then, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200 in a state where plasma is generated in the step ST24. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in the step ST24 in association with one or more parameters in the storage unit 2a.

[0105] Next, in step ST25, first distribution data is calculated. The first distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the first substrate. Here, when the temperature of the first substrate disposed on the substrate support 11 is constant, the ion flux Γi (m -2 s -1 ), which is related to the heat flux Γ generated between the first substrate and the plasma generated in the plasma processing chamber 10heat (W / m 2 *s) can have the following relationship.

[0106] 「 i ×Vdc∝Γ heat Formula (4)

[0107] Here, Vdc (V) is a bias voltage (V) generated between the first substrate and the plasma. In addition, the heat flux Γ generated between the first substrate arranged on the substrate support portion 11 and the plasma generated in the plasma processing chamber 10 is heat It can be calculated based on the supplied electric power obtained in step ST24. In one example, the heat flux Γ in each region 111c is heat It can be calculated based on the following mathematical formula.

[0108] 「 heat =(P0-P htr ) / A Formula (5)

[0109] Here, P0 is the electric power (W) supplied to the heater 200 of the region 111c in a state where plasma is not generated. That is, P0 is the electric power supplied to the heater 200 of the region 111c acquired in step ST12. htr is the electric power (W) of the heater 200 supplied to the region 111c in the state where plasma is generated. htr is the electric power supplied to the heater 200 of the region 111c acquired in step ST15. As an example, P htr It can be the electric power (W) when the electric power (W) of the heater 200 supplied to the region 111c becomes substantially constant after the plasma is generated. In addition, A is the area (m 2 ).

[0110] Next, in order to correct the distribution of the ion flux in the second substrate that is subjected to the plasma treatment after the first substrate, in step ST26, a correction value may be calculated based on the first distribution data. In one example, the correction value may be a difference between the reference distribution data and the first distribution data. In one example, the reference distribution data may be distribution data of the ion flux obtained when the plasma treatment device 1 is in a normal state. The normal state of the plasma treatment device 1 includes, for example, a state after the plasma treatment device 1 is set up or maintained.

[0111] (Step ST4: Plasma Treatment of Second Substrate)

[0112] Fig. 91 is a flowchart showing an example of step ST3. In step ST3, the second substrate is subjected to plasma treatment. In step ST3, the second substrate can be subjected to plasma treatment using the correction value obtained for the first substrate in step ST26. In one example, the first substrate may be the first substrate to be treated in a specific batch. In addition, the second substrate may be a substrate to be treated after the first substrate in the specific batch.

[0113] like Fig. 9 As shown, process ST3 includes a process of configuring a second substrate (process ST31), a process of setting the temperature of the second substrate (process ST32), a process of generating plasma based on a correction value (process ST33), a process of obtaining the supplied electric power of each heater (process ST34), a process of calculating second distribution data (process ST35), and a process of calculating a correction value (process ST36).

[0114] First, in step ST31, the second substrate is arranged on the substrate support part 11. Then, in step ST32, the temperature of the second substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control circuit board 80 so that the temperature of the second substrate in each area 111c becomes the set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 and stores it in the storage unit 2a when the temperature of the second substrate is stable at the set temperature.

[0115] After the temperature of the second substrate is stabilized at the set temperature, in step ST33, plasma is generated in the plasma processing chamber 10 to perform plasma processing on the second substrate. A part of the parameters for performing plasma processing on the second substrate in step ST33 can be set based on the correction value calculated based on the reference distribution data in step ST26. That is, in step ST33, plasma can be generated in the plasma processing chamber 10 based on the correction value calculated based on the reference distribution data in step ST25. As an example, when the correction value is the difference between the reference distribution data and the first distribution data (the difference in the distribution of the ion flux), the control unit 2 refers to the change in the distribution of the ion flux corresponding to the correction value in the table stored in the storage unit 2a in step ST1. Then, the control unit 2 sets the parameter for correcting the distribution of the ion flux based on the change in the parameter corresponding to the change in the distribution of the ion flux contained in the table.

[0116] In one example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma, or the current and / or voltage supplied to the electromagnet that generates the magnetic field. In one example, the control unit 2 can adjust the current level of the current supplied to at least one of the coils 61 to 64 of the upper electromagnet unit 45 and the coils 161 to 163 of the side wall electromagnet unit 145 based on the correction value. Thus, the distribution of the electron density in the plasma is corrected, and the distribution of the ion flux can be corrected. In addition, the distribution of the electron density in the plasma is corrected, and the distribution of the thickness of the ion sheath is corrected. Thus, the incident angle of the ion flux relative to the substrate is corrected. Furthermore, for example, the deviation of the angle of the recess formed in the substrate by plasma etching can be reduced.

[0117] Next, in step ST34, the electric power supplied to the plurality of heaters 200 is acquired. In steps ST33 and ST34, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the second substrate in each region 111c becomes the set temperature. Then, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200 in a state where plasma is generated. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST34 in association with one or more parameters in the storage unit 2a.

[0118] Next, in step ST35, the second distribution data is calculated. The first distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the second substrate. The distribution data of the ion flux may be calculated based on equations (4) and (5).

[0119] Next, in step ST36, a correction value is calculated based on the reference distribution data and the second distribution data. The correction value can be a difference between the reference distribution data and the second distribution data. In a batch including the first substrate and the second substrate, the correction value can be used as a correction value for the distribution of ion flux in a plasma process performed after the second substrate.

[0120] As an example, the present disclosure may include the following aspects.

[0121] (Note 1)

[0122] A plasma processing device, characterized in that it comprises:

[0123] a plasma processing chamber;

[0124] a substrate support disposed in the plasma processing chamber;

[0125] an antenna disposed above the plasma processing chamber;

[0126] a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal;

[0127] a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal;

[0128] An upper electromagnet unit, which is disposed above the antenna and has a plurality of upper annular electromagnets arranged in concentric circles;

[0129] a side wall electromagnet unit, which is arranged in a manner to surround the side wall of the plasma processing chamber and has a plurality of side wall annular electromagnets arranged in a longitudinal direction;

[0130] an electromagnet excitation circuit configured to supply current to at least one of the plurality of upper annular electromagnets and the plurality of sidewall annular electromagnets; and

[0131] The control unit is configured to adjust the current supplied to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets to control the plasma electron density distribution in the plasma processing chamber.

[0132] (Note 2)

[0133] The plasma processing apparatus according to Supplement 1, wherein:

[0134] The plurality of upper annular electromagnets have:

[0135] a first upper annular electromagnet;

[0136] a second upper annular electromagnet disposed so as to surround the first upper annular electromagnet;

[0137] a third upper annular electromagnet arranged so as to surround the second upper annular electromagnet; and

[0138] A fourth upper annular electromagnet is arranged so as to surround the third upper annular electromagnet.

[0139] (Note 3)

[0140] The plasma processing apparatus according to Supplement 1 or 2, wherein:

[0141] The plurality of side wall annular electromagnets have:

[0142] a first side wall annular electromagnet;

[0143] a second side wall annular electromagnet disposed below the first side wall annular electromagnet; and

[0144] The third side wall annular electromagnet is arranged below the second side wall annular electromagnet.

[0145] (Note 4)

[0146] The plasma processing apparatus according to any one of Supplementary Notes 1 to 3, wherein:

[0147] The substrate support portion includes a plurality of heaters,

[0148] The control unit is configured to acquire an electric power value supplied to each of the plurality of heaters, and adjust a current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets based on the acquired electric power value.

[0149] (Note 5)

[0150] The plasma processing apparatus according to any one of Supplementary Notes 1 to 4, wherein:

[0151] the source RF signal is repeatedly set to a first state having a first electric power level and a second state having a second electric power level smaller than the first electric power level,

[0152] The current is repeatedly set to a first state having a first current level and a second state having a second current level smaller than the first current level based on the first state and the second state of the source RF signal.

[0153] (Note 6)

[0154] The plasma processing apparatus according to Supplementary Note 5, wherein:

[0155] The first electric power level is a zero electric power level, and the first current level is a zero current level.

[0156] (Note 7)

[0157] The plasma processing apparatus according to any one of Supplementary Notes 1 to 6, wherein:

[0158] The control unit is configured to be able to adjust a current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets during a plasma ignition sequence.

[0159] (Note 8)

[0160] A plasma processing device, characterized in that it comprises:

[0161] a plasma processing chamber;

[0162] a substrate support disposed in the plasma processing chamber;

[0163] an antenna disposed above the plasma processing chamber;

[0164] a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal;

[0165] a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal;

[0166] an upper electromagnet unit, which is disposed above the antenna and has a plurality of upper annular electromagnets arranged in concentric circles; and

[0167] The electromagnet excitation circuit is configured to supply current to at least one of the plurality of upper annular electromagnets.

[0168] (Note 9)

[0169] The plasma processing apparatus according to Supplementary Note 8, wherein:

[0170] The plurality of upper annular electromagnets have:

[0171] a first upper annular electromagnet; and

[0172] A second upper annular electromagnet is disposed so as to surround the first upper annular electromagnet.

[0173] (Note 10)

[0174] The plasma processing apparatus according to Supplementary Note 9, wherein:

[0175] The plurality of upper annular electromagnets also have:

[0176] a third upper annular electromagnet arranged so as to surround the second upper annular electromagnet; and

[0177] A fourth upper annular electromagnet is arranged so as to surround the third upper annular electromagnet.

[0178] (Note 11)

[0179] The plasma processing apparatus according to any one of Supplementary Notes 8 to 10, wherein:

[0180] The substrate support portion includes a plurality of heaters,

[0181] The plasma processing apparatus further includes a control unit configured to acquire an electric power value supplied to each of the plurality of heaters and adjust a current supplied to at least one of the plurality of upper annular electromagnets based on the acquired electric power value.

[0182] (Note 12)

[0183] A plasma processing device, comprising:

[0184] a plasma processing chamber;

[0185] a substrate support disposed in the plasma processing chamber;

[0186] an antenna disposed above the plasma processing chamber;

[0187] a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal;

[0188] a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal;

[0189] a side wall electromagnet unit arranged to surround the side wall of the plasma processing chamber and having a plurality of side wall annular electromagnets arranged in a longitudinal direction; and

[0190] The electromagnet excitation circuit is configured to supply current to at least one of the plurality of side wall ring-shaped electromagnets.

[0191] (Note 13)

[0192] The plasma processing apparatus according to Supplementary Note 12, wherein:

[0193] The plurality of side wall annular electromagnets have:

[0194] a first sidewall annular electromagnet; and

[0195] A second side wall annular electromagnet is arranged to surround the first side wall annular electromagnet.

[0196] (Note 14)

[0197] The plasma processing apparatus according to Supplementary Note 13, wherein:

[0198] The plurality of side wall annular electromagnets also have:

[0199] a third side wall annular electromagnet arranged to surround the second side wall annular electromagnet; and

[0200] A fourth side-wall annular electromagnet is arranged so as to surround the third side-wall annular electromagnet.

[0201] (Note 15)

[0202] The plasma processing apparatus according to any one of Supplementary Notes 12 to 14, wherein:

[0203] The substrate support portion includes a plurality of heaters,

[0204] The plasma processing apparatus further includes a control unit configured to acquire an electric power value supplied to each of the plurality of heaters and adjust a current supplied to at least one of the plurality of upper annular electromagnets based on the acquired electric power value.

[0205] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the embodiments without departing from the scope and purpose of the present disclosure. For example, a part of the constituent elements in a certain embodiment can be added to other embodiments. In addition, a part of the constituent elements in a certain embodiment can be replaced with corresponding constituent elements in other embodiments.

[0206] Description of Reference Numerals

[0207] 1 ... plasma processing device, 2 ... control unit, 3 ... upper electromagnet assembly, 4 ... side wall electromagnet assembly, 10 ... plasma processing chamber, 10 ... chamber, 12 ... plasma generating unit, 14 ... antenna, 20 ... gas supply unit, 30 ... power supply, 45 ... upper electromagnet unit, 46 to 49 ... electromagnet, 46 ... electromagnet, 47 ... electromagnet, 48 ... electromagnet, 49 ... electromagnet, 50 ... coil frame, 51 ... central part, 52 to 55 ... cylindrical part, 52 ... cylindrical part, 53 ... cylindrical part, 54 ... cylindrical part, 55 ... cylindrical part, 56 ... base part, 61 to 64 ... coil, 65 ... current source, 102 ... side wall, 145 ... side wall electromagnet unit, 146 to 148 ... electromagnet, 161 to 163 ... coil, 200 ... heater.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an antenna disposed above the plasma processing chamber; a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal; a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal; An upper electromagnet unit, which is disposed above the antenna and has a plurality of upper annular electromagnets arranged in concentric circles; a side wall electromagnet unit, which is arranged in a manner to surround the side wall of the plasma processing chamber and has a plurality of side wall annular electromagnets arranged in a longitudinal direction; an electromagnet excitation circuit configured to supply current to at least one of the plurality of upper annular electromagnets and the plurality of sidewall annular electromagnets; and The control unit is configured to adjust the current supplied to at least one of the plurality of upper ring-shaped electromagnets and the plurality of side wall ring-shaped electromagnets to control the plasma electron density distribution in the plasma processing chamber.

2. The plasma processing device according to claim 1, characterized in that: The plurality of upper annular electromagnets have: a first upper annular electromagnet; a second upper annular electromagnet disposed so as to surround the first upper annular electromagnet; a third upper annular electromagnet arranged so as to surround the second upper annular electromagnet; and A fourth upper annular electromagnet is arranged so as to surround the third upper annular electromagnet.

3. The plasma processing device according to claim 1, characterized in that: The plurality of side wall annular electromagnets have: a first side wall annular electromagnet; a second side wall annular electromagnet disposed below the first side wall annular electromagnet; and The third side wall annular electromagnet is arranged below the second side wall annular electromagnet.

4. The plasma processing device according to any one of claims 1 to 3, characterized in that: The substrate support portion includes a plurality of heaters, The control unit is configured to acquire an electric power value supplied to each of the plurality of heaters, and adjust a current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets based on the acquired electric power value.

5. The plasma processing apparatus according to any one of claims 1 to 3, characterized in that: The source RF signal has a first power level during a first period in each cycle, and has a second power level smaller than the first power level during a second period in each cycle, The current has a first current level during the first period in each cycle, and has a second current level smaller than the first current level during the second period in each cycle.

6. The plasma processing device according to claim 5, characterized in that: The first electric power level is a zero electric power level, and the first current level is a zero current level.

7. The plasma processing apparatus according to any one of claims 1 to 3, characterized in that: The control unit is configured to be able to adjust a current supplied to at least one of the plurality of upper annular electromagnets and the plurality of side wall annular electromagnets during a plasma ignition sequence.

8. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an antenna disposed above the plasma processing chamber; a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal; a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal; an upper electromagnet unit, which is disposed above the antenna and has a plurality of upper annular electromagnets arranged in concentric circles; and The electromagnet excitation circuit is configured to supply current to at least one of the plurality of upper annular electromagnets.

9. The plasma processing device according to claim 8, characterized in that: The plurality of upper annular electromagnets have: a first upper annular electromagnet; and A second upper annular electromagnet is disposed so as to surround the first upper annular electromagnet.

10. The plasma processing device according to claim 9, characterized in that: The plurality of upper annular electromagnets also have: a third upper annular electromagnet arranged so as to surround the second upper annular electromagnet; and A fourth upper annular electromagnet is arranged so as to surround the third upper annular electromagnet.

11. The plasma processing apparatus according to any one of claims 8 to 10, characterized in that: The substrate support portion includes a plurality of heaters, The plasma processing apparatus further includes a control unit configured to acquire an electric power value supplied to each of the plurality of heaters and adjust a current supplied to at least one of the plurality of upper annular electromagnets based on the acquired electric power value.

12. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an antenna disposed above the plasma processing chamber; a source RF signal generating unit, which is electrically connected to the antenna and is configured to generate a source RF signal; a bias signal generating unit electrically connected to the substrate supporting unit and configured to generate a bias signal; a side wall electromagnet unit arranged to surround the side wall of the plasma processing chamber and having a plurality of side wall annular electromagnets arranged in a longitudinal direction; and The electromagnet excitation circuit is configured to supply current to at least one of the plurality of side wall ring-shaped electromagnets.

13. The plasma processing device according to claim 12, characterized in that: The plurality of side wall annular electromagnets have: a first sidewall annular electromagnet; and A second side wall annular electromagnet is arranged to surround the first side wall annular electromagnet.

14. The plasma processing device according to claim 13, characterized in that: The plurality of side wall annular electromagnets also have: a third side wall annular electromagnet arranged to surround the second side wall annular electromagnet; and A fourth side-wall annular electromagnet is arranged so as to surround the third side-wall annular electromagnet.

15. The plasma processing apparatus according to any one of claims 12 to 14, characterized in that: The substrate support portion includes a plurality of heaters, The plasma processing apparatus further includes a control unit configured to acquire an electric power value supplied to each of the plurality of heaters and adjust a current supplied to at least one of the plurality of upper annular electromagnets based on the acquired electric power value.

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