Treatment method of diamond-like carbon film

Abstract

The treatment method of the diamond-like carbon film comprises the following steps: providing the diamond-like carbon film; forming a silicon dioxide film on the surface of the diamond-like carbon film; and carrying out surface treatment on the silicon dioxide: applying preset energy between the silicon dioxide film and the diamond-like carbon film, so that the silicon dioxide film and the diamond-like carbon film are combined. The surface tension of the diamond-like carbon film can be effectively reduced, and the adhesion performance is reduced, so that the applicability of the diamond-like carbon film is greatly improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor manufacturing, and in particular to a method for processing a diamond-like carbon film. Background Art

[0002] Diamond-like carbon (DLC) is a new type of amorphous carbon material that combines the excellent properties of diamond and graphite. It has excellent mechanical properties, wear resistance, corrosion resistance and biocompatibility. It is widely used in aviation, automobile, medical, optics and electronics.

[0003] However, the high surface tension and adhesion properties of DLC surfaces limit its development in certain application areas, such as blood-contact materials and biomaterials in the medical field, because the high surface tension can cause blood coagulation and cell adhesion.

[0004] Therefore, it is urgent to provide a method for processing a diamond-like carbon film to overcome the above defects. Summary of the invention

[0005] The object of the present invention is to provide a method for treating a diamond-like carbon film to reduce the surface tension of the diamond-like carbon film and improve the stability of the material.

[0006] To achieve the above object, the method for processing a diamond-like carbon film of the present invention comprises the following steps:

[0007] Providing diamond-like carbon films;

[0008] forming a silicon dioxide film on the surface of the diamond-like carbon film; and

[0009] The silicon dioxide is subjected to surface treatment: a predetermined energy is applied between the silicon dioxide film and the diamond-like carbon film so that the silicon dioxide film and the diamond-like carbon film are bonded.

[0010] Compared with the prior art, the present invention forms a silicon dioxide film on a diamond-like carbon film, and enhances the bonding force between the silicon dioxide film and the diamond-like carbon film through appropriate surface treatment, thereby obtaining a stable material structure, and the silicon dioxide film on the upper layer of the diamond-like carbon film can effectively reduce its surface tension. The improved diamond-like carbon film is applied to blood-contact materials in the medical field. Through platelet adhesion experiments and contact angle measurements, it is found that the surface tension of the treated diamond-like carbon film is significantly reduced, the platelet adhesion rate is reduced by 70%, and the contact angle is reduced from 70° to 20°, thereby greatly improving the applicability of the diamond-like carbon film.

[0011] Preferably, the silicon dioxide film is formed by ion sputtering.

[0012] Preferably, the step of forming the silicon dioxide film includes: in a vacuum chamber, controlling the ion source power to be 1.0-1.5 kW, the workpiece negative bias voltage to be 50V-100V, turning on the sputtering target, and the sputtering target power to be 1-1.5 kW.

[0013] Preferably, the reaction temperature in the vacuum chamber is 120-150° C., and the sputtering time is 1.5-2 hours.

[0014] Preferably, the vacuum degree of the vacuum chamber is controlled to be 1.5×10 -2 Pa to 1.8×10 -2 Pa.

[0015] Preferably, the surface treatment comprises: applying the predetermined energy using a laser beam or an electric arc.

[0016] Preferably, the predetermined energy is 20 mJ to 50 mJ, and the time is 10 ns to 20 ns.

[0017] Preferably, the method further comprises: repeatedly applying the predetermined energy 10-15 times. DETAILED DESCRIPTION

[0018] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0019] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0020] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0021] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0022] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0024] The method for treating the diamond-like carbon film of the present invention is further described below in conjunction with the embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide an improved method for treating the diamond-like carbon film, which is low in cost and simple in operation, can reduce the surface tension of the diamond-like carbon film, and improve the stability of the material.

[0025] In one embodiment of the method for treating a diamond-like carbon film of the present invention, the following steps are included:

[0026] Providing diamond-like carbon films;

[0027] forming a silicon dioxide film on the surface of the diamond-like carbon film; and

[0028] The silicon dioxide is subjected to surface treatment: a predetermined energy is applied between the silicon dioxide film and the diamond-like carbon film so that the silicon dioxide film and the diamond-like carbon film are bonded.

[0029] The present invention forms a silicon dioxide film on a diamond-like carbon film, and enhances the bonding force between the silicon dioxide film and the diamond-like carbon film through appropriate surface treatment, thereby obtaining a stable material structure. In addition, the silicon dioxide film on the upper layer of the diamond-like carbon film can effectively reduce its surface tension. The improved film is applied to blood-contact materials in the medical field. Through platelet adhesion experiments and contact angle measurements, it is found that the surface tension of the treated diamond-like carbon film is significantly reduced, the platelet adhesion rate is reduced by 70%, and the contact angle is reduced from 70° to 20°, thereby greatly improving the applicability of the diamond-like carbon film.

[0030] Specifically, a silicon dioxide film can be formed by ion sputtering. For example, a diamond-like carbon layer is placed in a vacuum chamber, the ion source power is controlled to be 1.0-1.5 kW, the negative bias voltage of the workpiece is 50V-100V, the sputtering target is turned on, and the sputtering target power is 1-1.5 kW. Specifically, the reaction temperature in the vacuum chamber is 120-150°C, and the sputtering time is 1.5-2 hours, thereby forming a silicon dioxide film with a thickness of 50-100 nm. In one embodiment, the vacuum degree of the vacuum chamber is controlled to be 1.5×10 -2 Pa to 1.8×10 -2 Pa, to obtain better sputtering effect.

[0031] Next, the silicon dioxide is surface treated: for example, a laser beam or an electric arc is used to apply a predetermined energy between the silicon dioxide film and the diamond-like carbon film, so that the silicon dioxide film and the diamond-like carbon film are bonded. Preferably, the predetermined energy is 20mJ to 50mJ, the time is 10ns to 20ns, and the predetermined energy is applied repeatedly 10-15 times, so that the bond between the silicon dioxide film and the diamond-like carbon film is more stable. The improved diamond-like carbon film is applied to blood contact materials in the medical field. Through platelet adhesion experiments and contact angle measurements, it is found that the surface tension of the treated diamond-like carbon film is significantly reduced, the platelet adhesion rate is reduced by 70%, and the contact angle is reduced from 70° to 20°.

[0032] Therefore, the present invention forms a silicon dioxide film on the diamond-like carbon film and enhances the bonding force between the silicon dioxide film and the diamond-like carbon film through appropriate surface treatment, thereby obtaining a stable material structure. In addition, the silicon dioxide film on the upper layer of the diamond-like carbon film can effectively reduce its surface tension and reduce the adhesion performance, thereby greatly improving the applicability of the diamond-like carbon film.

[0033] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for processing a diamond-like carbon film, characterized in that: The following steps are involved: Providing diamond-like carbon films; forming a silicon dioxide film on the surface of the diamond-like carbon film; as well as The silicon dioxide is subjected to surface treatment: a predetermined energy is applied between the silicon dioxide film and the diamond-like carbon film so that the silicon dioxide film and the diamond-like carbon film are bonded.

2. The method for treating a diamond-like carbon film according to claim 1, wherein: The silicon dioxide film is formed by ion sputtering.

3. The method for treating a diamond-like carbon film according to claim 2, wherein: The steps of forming the silicon dioxide film include: in a vacuum chamber, controlling the ion source power to be 1.0-1.5 kW, the workpiece negative bias voltage to be 50V-100V, turning on the sputtering target, and the sputtering target power to be 1-1.5 kW.

4. The method for treating a diamond-like carbon film according to claim 3, wherein: The vacuum degree of the vacuum chamber is controlled to be 1.5×10 -2 Pa to 1.8×10 -2 Pa.

5. The method for treating a diamond-like carbon film according to claim 3, wherein: The reaction temperature in the vacuum chamber is 120-150° C., and the sputtering time is 1.5-2 hours.

6. The method for treating a diamond-like carbon film according to claim 1, wherein: The surface treatment includes applying the predetermined energy by using a laser beam or an electric arc.

7. The method for treating a diamond-like carbon film according to claim 6, wherein: The predetermined energy is 20 mJ to 50 mJ, and the time is 10 ns to 20 ns.

8. The method for treating a diamond-like carbon film according to claim 7, wherein: Also includes: The predetermined energy is applied repeatedly 10-15 times.