Cadmium zinc telluride crystal growth quality supervision method and system based on Internet of Things

By deploying sensors in zinc tellurium cadmium crystal growth furnace, a temperature field temperature cloud map and dynamic growth model are established, the ampoule motion trajectory is analyzed in real time, the relative motion model of the temperature field is obtained and the correction is made, the crystal defects and growth uneven problems caused by uneven temperature gradients are solved, and the crystal growth quality is improved.

CN119900088AActive Publication Date: 2025-04-29HUNAN DAHE NEW MATERIAL CO LTD
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Patent Information

Application Number
CN202411963853.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-29
Estimated Expiration
2044-12-30

AI Technical Summary

Technical Problem

During the growth of zinc tellurium crystals, uneven temperature gradients may lead to internal defects and uneven growth of crystals, and the ampoule needs precise control during the relative movement of the temperature field.

Method used

By deploying sensors in the growth furnace, collecting temperature data and position data, establishing a temperature field temperature cloud map and dynamic growth model, analyzing the ampoule motion trajectory in real time, and correlating it with the temperature field temperature cloud map, obtaining the relative motion model of the temperature field, and finally obtaining the corrected data set based on the model and correcting it.

Benefits of technology

The temperature field monitoring and correction of zinc tellurium cadmium crystals is achieved to ensure uniform temperature gradient and improve crystal growth quality.

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Abstract

The invention relates to the technical field of tellurium-zinc-cadmium crystal growth quality supervision, in particular to a tellurium-zinc-cadmium crystal growth quality supervision method and system based on the Internet of Things. The growth quality of the cadmium zinc telluride crystal is effectively improved; according to the method, sensors are deployed in a growth furnace based on the Bridgman method, temperature data and position data are collected, a temperature field temperature cloud picture is established through the temperature data and the position data, and then a dynamic growth model is established; performing real-time analysis according to the dynamic growth model to obtain an ampoule motion track, and performing correlation of relative motion with the temperature cloud picture of the temperature field so as to obtain a temperature field relative motion model; acquiring ampoule relative motion temperature data based on the temperature field relative motion model, and further acquiring a corresponding correction data set; and setting a correction instruction corresponding to the correction data set, and correcting the correction data set.
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Description

Technical Field

[0001] The invention relates to the technical field of cadmium zinc telluride crystal growth quality supervision, and in particular to a cadmium zinc telluride crystal growth quality supervision method and system based on the Internet of Things. Background Art

[0002] Cadmium zinc telluride crystal is an important substrate material for mercury cadmium telluride infrared detectors. It is usually grown by the Bridgman method, and directional cooling crystallization is achieved through the relative movement of the ampoule and the temperature field in the growth furnace. As a directly controllable parameter, the temperature field can be adjusted through appropriate furnace temperature distribution and pulling rate. The temperature field has the most important influence on the quality of crystal growth. The accurate description of the temperature field is a complex heat transfer problem, involving three heat transfer mechanisms of conduction, convection and radiation and their interactions. The cadmium zinc telluride crystal growth furnace is a cylindrical cavity structure. Its main feature is that it has a dual temperature zone. The upper and middle sections of the furnace provide the ingot melting temperature, and the lower section provides insulation annealing after crystal growth. The middle is a temperature gradient adjustment zone.

[0003] However, if the temperature gradient is uneven during the process of achieving directional cooling crystallization through the relative movement of the ampoule and the temperature field in the growth furnace, defects or uneven growth may occur inside the crystal; secondly, when the ampoule moves in the temperature field and during the relative movement formed by the temperature field, it is necessary to accurately control the relative movement temperature of the ampoule with respect to the temperature field of the growth furnace during the relative movement; therefore, in order to solve the above problems, the present invention provides a method and system for supervising the growth quality of cadmium zinc telluride crystals based on the Internet of Things. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a method and system for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things;

[0005] The purpose of the present invention can be achieved by the following technical solution: a method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things, the method comprising the following steps:

[0006] Step S1: deploying sensors in the growth furnace based on the Bridgman method, collecting temperature data and position data, establishing a temperature field temperature cloud map through the temperature data and position data, and then establishing a dynamic growth model;

[0007] Step S2: obtaining the motion trajectory of the ampoule by real-time analysis based on the dynamic growth model, and correlating the relative motion with the temperature cloud map of the temperature field, thereby obtaining a relative motion model of the temperature field;

[0008] Step S3: acquiring the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then acquiring the corresponding correction data set;

[0009] Step S4: setting a correction instruction corresponding to the correction data set, and correcting the correction data set.

[0010] Furthermore, the process of deploying sensors in the growth furnace based on the Bridgman method to collect temperature data and position data includes:

[0011] Performing structural mapping on the growth furnace to obtain a growth furnace cylinder, wherein the growth furnace cylinder includes an upper bottom surface of the growth furnace, a lower bottom surface of the growth furnace, a height and an axis; the upper bottom surface of the growth furnace and the lower bottom surface of the growth furnace include a center and a radius;

[0012] The growth furnace cylinder is divided into upper, middle and lower sections, and the upper middle section dividing points and the middle lower section dividing points corresponding to the upper, middle and lower sections are obtained; and temperature points are respectively deployed in the upper, middle and lower sections and marked as i, where i=1, 2, ..., j, and j is a positive integer; temperature sensors are deployed at the upper middle section dividing point, the middle lower section dividing point and the temperature points to collect corresponding temperature data;

[0013] Among them, the starting temperature point and the central temperature point are deployed in the upper section, several middle temperature points and several central temperature points are deployed in the middle section, and the central temperature point and the ending temperature point are deployed in the lower section;

[0014] A head position node and a center position node are set on the ampoule device, and a head position sensor and a center position sensor are installed on the head position node and the center position node respectively; the head position sensor is used to collect the inclination angle of the ampoule; the center position sensor is used to collect the horizontal position data and the vertical position data of the ampoule;

[0015] A speed sensor is installed at the central position node to collect the ampoule relative speed data; the ampoule inclination angle, the ampoule horizontal position data, the vertical position data and the ampoule relative speed data are integrated to generate an ampoule motion data set.

[0016] Furthermore, the temperature field temperature cloud map establishment process includes:

[0017] Set the cutting height corresponding to the temperature point, place each temperature point on the radius corresponding to the upper bottom surface of the cut growth furnace, use the axis as the critical surface to cut the growth furnace cylinder according to the cutting height to obtain the corresponding lower bottom surface of the cut growth furnace, and then obtain the cut growth furnace cylinder, and obtain the volume of the cut growth furnace cylinder, which is marked as the temperature data display area; connect the temperature data display areas corresponding to each temperature point according to the growth furnace cylinder to generate a temperature field temperature cloud map.

[0018] Furthermore, the process of establishing the dynamic growth model includes:

[0019] A dynamic rectangular coordinate system is established with the central position node as the origin and the horizontal position data and vertical position data as the abscissa and ordinate respectively, and the relative velocity data of the ampoule is represented in the direction starting from the origin; then the dynamic rectangular coordinate system is mapped to the temperature field cloud map to construct a dynamic growth model.

[0020] Furthermore, the process of acquiring the motion trajectory of the ampoule includes:

[0021] Taking the starting temperature point as the starting position, setting the starting acquisition time point and the acquisition cycle, obtaining the acquisition time point corresponding to each temperature point according to the acquisition cycle, and obtaining the real-time data set corresponding to the acquisition time point in real time based on the dynamic growth model, the real-time data set includes the temperature data display area where the central position node is located, temperature data and ampoule movement data set;

[0022] Obtaining the ampoule motion trajectory according to the ampoule motion data set;

[0023] That is, the specific formula is:

[0024]

[0025] Among them, x t and t It is represented as the motion trajectory of the ampoule corresponding to the acquisition time point t; and It is expressed as the horizontal position data and vertical position data of the ampoule corresponding to the acquisition time point t; t0 and v t It is represented by the start of collection time point and the relative speed data of the ampoule corresponding to the collection time point t, and 0 is the tilt angle of the ampoule.

[0026] Furthermore, the process of acquiring the temperature field relative motion model includes:

[0027] Obtain the temperature data display area corresponding to the ampoule motion trajectory at the acquisition time point, and obtain the temperature data corresponding to the temperature data display area, set the corresponding temperature data threshold range according to the temperature data display area where the ampoule motion trajectory is located, and compare it with the corresponding temperature data;

[0028] If the temperature data exists within the temperature data threshold range, the next acquisition time point is obtained, and the corresponding ampoule motion trajectory is obtained, and then the temperature data threshold range corresponding to the temperature data display area where the ampoule motion trajectory is located is compared again, until the temperature data corresponding to the temperature data display area where the acquisition time point is located does not exist within the temperature data threshold range, then the corresponding temperature data display area is marked as an abnormal display area; otherwise, the corresponding temperature data display area is marked as an abnormal display area;

[0029] Acquire the ampoule relative speed data and the corresponding temperature data of the ampoule motion trajectory corresponding to the abnormal display area, and couple the ampoule relative speed data and the temperature data with the ampoule motion trajectory to construct a temperature field relative motion model;

[0030] That is, the specific formula is:

[0031]

[0032] in, It is expressed as the temperature data change rate corresponding to the acquisition time point t in the abnormal display area; Expressed as the gradient corresponding to the temperature data T; and It is expressed as the temperature data corresponding to x in the ampoule motion trajectory t and t The second derivative of ; γ is represented by the thermal diffusion coefficient.

[0033] Furthermore, the process of acquiring the modified data set includes:

[0034] Obtain the relative motion temperature data of the ampoule corresponding to the acquisition time point according to the temperature data change rate;

[0035] That is, the specific formula is:

[0036]

[0037] Wherein, T(t) represents the relative motion temperature data of the ampoule;

[0038] Data mapping is performed between the relative motion temperature data of the ampoule and the corresponding abnormal display area to obtain a correction data set corresponding to the abnormal display area.

[0039] Furthermore, a correction instruction corresponding to the correction data set is set, and the process of correcting the correction data set includes:

[0040] A corresponding instruction code is set for each temperature data display area, marked as #i, and the correction instruction corresponding to the correction data set is (#i, T(t)). The correction instruction corresponding to the correction data set is sent to a preset temperature control device, and the abnormal display area and ampoule relative motion temperature data corresponding to the instruction code are obtained. Then, the temperature corresponding to the abnormal display area is adjusted to the ampoule relative motion temperature data, and the correction is completed.

[0041] Furthermore, the following modules are included:

[0042] Collection and deployment module: used to deploy sensors in the growth furnace based on the Bridgman method, collect temperature data and position data, establish a temperature field temperature cloud map through the temperature data and position data, and then establish a dynamic growth model;

[0043] Data association module: used to obtain the motion trajectory of the ampoule in real time according to the dynamic growth model, and to associate the relative motion with the temperature cloud map of the temperature field, thereby obtaining the relative motion model of the temperature field;

[0044] Correction data set generation module: used to obtain the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then obtain the corresponding correction data set;

[0045] Correction module: used to set the correction instructions corresponding to the correction data set and correct the correction data set.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] 1. The present invention deploys sensors in the growth furnace based on the Bridgman method to collect temperature data and position data, establishes a temperature field temperature cloud map through the temperature data and position data, and then establishes a dynamic growth model; obtains the motion trajectory of the ampoule through real-time analysis according to the dynamic growth model, and associates the relative motion with the temperature field temperature cloud map, and then obtains the temperature field relative motion model; monitors the temperature data in real time according to the temperature data and the temperature data display area; and can visually observe whether the temperature of the upper, middle and lower sections of the temperature field is uniform, and the uniform temperature effectively improves the growth quality.

[0048] 2. Based on the relative motion model of the temperature field, the relative motion temperature data of the ampoule is obtained, and then the corresponding correction data set is obtained; the correction instruction corresponding to the correction data set is set to correct the correction data set; effectively regulating the relative motion temperature data of the ampoule can improve the growth quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0050] Figure 1 It is a flow chart of the present invention.

[0051] Figure 2 Schematic diagram of the dynamic growth model.

[0052] Figure 3 It is a schematic diagram of the present invention. DETAILED DESCRIPTION

[0053] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] Embodiment 1,

[0055] like Figure 1 As shown, a method for supervising the growth quality of cadmium zinc telluride crystals based on the Internet of Things comprises the following steps:

[0056] Step S1: deploying sensors in the growth furnace based on the Bridgman method, collecting temperature data and position data, establishing a temperature field temperature cloud map through the temperature data and position data, and then establishing a dynamic growth model;

[0057] Step S2: obtaining the motion trajectory of the ampoule by real-time analysis based on the dynamic growth model, and correlating the relative motion with the temperature cloud map of the temperature field, thereby obtaining a relative motion model of the temperature field;

[0058] Step S3: acquiring the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then acquiring the corresponding correction data set;

[0059] Step S4: setting a correction instruction corresponding to the correction data set, and correcting the correction data set.

[0060] Embodiment 2,

[0061] This embodiment is a further limitation of Embodiment 1, and Step S1 is implemented by the following process:

[0062] The process of deploying sensors in the growth furnace based on the Bridgman method to collect temperature data and position data includes:

[0063] Performing structural mapping on the growth furnace to obtain a growth furnace cylinder, wherein the growth furnace cylinder includes an upper bottom surface of the growth furnace, a lower bottom surface of the growth furnace, a height and an axis; the upper bottom surface of the growth furnace and the lower bottom surface of the growth furnace include a center and a radius;

[0064] The growth furnace cylinder is divided into upper, middle and lower sections, and the upper middle section dividing points and the middle lower section dividing points corresponding to the upper, middle and lower sections are obtained; and temperature points are respectively deployed in the upper, middle and lower sections and marked as i, where i=1, 2, ..., j, and j is a positive integer; temperature sensors are deployed at the upper middle section dividing point, the middle lower section dividing point and the temperature points to collect corresponding temperature data;

[0065] Among them, the starting temperature point and the central temperature point are deployed in the upper section, several middle temperature points and several central temperature points are deployed in the middle section, and the central temperature point and the ending temperature point are deployed in the lower section;

[0066] It should be further explained that, in a specific embodiment, the temperature sensor includes but is not limited to a platinum resistance temperature sensor, etc.;

[0067] A head position node and a center position node are set on the ampoule device, and a head position sensor and a center position sensor are installed on the head position node and the center position node respectively; the head position sensor is used to collect the inclination angle of the ampoule; the center position sensor is used to collect the horizontal position data and the vertical position data of the ampoule;

[0068] A speed sensor is installed at the central position node to collect the ampoule relative speed data; the ampoule inclination angle, the ampoule horizontal position data, the vertical position data and the ampoule relative speed data are integrated to generate an ampoule motion data set.

[0069] In the above embodiments, it needs to be further explained that the position sensor includes but is not limited to a linear encoder, a Hall sensor, etc.; the reason for dividing the furnace into upper, middle and lower sections for temperature collection and control is that the cadmium zinc telluride crystal growth furnace is a cylindrical cavity structure, and its main feature is that it has a double temperature zone, the upper and middle sections of the furnace provide the ingot melting temperature, the lower section provides the heat preservation annealing after the crystal growth, and the middle is the temperature gradient adjustment zone; different temperature points are deployed in different regional sections, among which several temperature points are deployed in the middle section to ensure the stability of the temperature gradient.

[0070] The temperature field temperature cloud map establishment process includes:

[0071] like Figure 2 As shown, the cutting height corresponding to the temperature point is set, and each temperature point is located on the radius corresponding to the upper bottom surface of the cut growth furnace. The axis is used as the critical surface to cut the growth furnace cylinder according to the cutting height to obtain the corresponding cut growth furnace lower bottom surface, and then obtain the cut growth furnace cylinder, and obtain the volume of the cut growth furnace cylinder, which is marked as the temperature data display area; the temperature data display area corresponding to each temperature point is connected according to the growth furnace cylinder to generate a temperature field temperature cloud map;

[0072] In the above embodiment, it needs to be further explained that the cadmium zinc telluride crystal growth furnace is a cylindrical cavity structure; the settings of the cutting height are not all the same, but are set according to the positions corresponding to the temperature points and the temperature points between adjacent ones. Furthermore, the temperature inside the growth furnace can be better concretized with the axis as the critical surface; therefore, the acquired temperature data display area is the area corresponding to the upper, middle and lower sections; and then the temperature data is monitored in real time according to the temperature data and the temperature data display area; it can be intuitively observed whether the temperature of the temperature field corresponding to the upper, middle and lower sections is uniform, and uniform temperature can improve the growth quality.

[0073] The process of establishing the dynamic growth model includes:

[0074] A dynamic rectangular coordinate system is established with the central position node as the origin and the horizontal position data and vertical position data as the abscissa and ordinate respectively, and the relative velocity data of the ampoule is represented in the direction starting from the origin; then the dynamic rectangular coordinate system is mapped to the temperature field cloud map to construct a dynamic growth model.

[0075] It should be further explained that, in the specific implementation process, the inclination angle of the ampoule is the angle with the ordinate.

[0076] Embodiment 3,

[0077] This embodiment is a further limitation of Embodiment 1, and Step S2 is implemented by the following process:

[0078] The process of obtaining the ampoule motion trajectory includes:

[0079] Taking the starting temperature point as the starting position, setting the starting acquisition time point and the acquisition cycle, obtaining the acquisition time point corresponding to each temperature point according to the acquisition cycle, and obtaining the real-time data set corresponding to the acquisition time point in real time based on the dynamic growth model, the real-time data set includes the temperature data display area where the central position node is located, temperature data and ampoule movement data set;

[0080] Obtaining the ampoule motion trajectory according to the ampoule motion data set;

[0081] That is, the specific formula is:

[0082]

[0083] Among them, x t and t It is represented as the motion trajectory of the ampoule corresponding to the acquisition time point t; and It is expressed as the horizontal position data and vertical position data of the ampoule corresponding to the acquisition time point t; t0 and x tIt is expressed as the start time of collection and the relative speed data of the ampoule corresponding to the collection time point t; θ is the tilt angle of the ampoule.

[0084] The process of acquiring the temperature field relative motion model includes:

[0085] Obtain the temperature data display area corresponding to the ampoule motion trajectory at the acquisition time point, and obtain the temperature data corresponding to the temperature data display area, set the corresponding temperature data threshold range according to the temperature data display area where the ampoule motion trajectory is located, and compare it with the corresponding temperature data;

[0086] If the temperature data exists within the temperature data threshold range, the next acquisition time point is obtained, and the corresponding ampoule motion trajectory is obtained, and then the temperature data threshold range corresponding to the temperature data display area where the ampoule motion trajectory is located is compared again, until the temperature data corresponding to the temperature data display area where the acquisition time point is located does not exist within the temperature data threshold range, then the corresponding temperature data display area is marked as an abnormal display area; otherwise, the corresponding temperature data display area is marked as an abnormal display area;

[0087] Acquire the ampoule relative speed data and the corresponding temperature data of the ampoule motion trajectory corresponding to the abnormal display area, and couple the ampoule relative speed data and the temperature data with the ampoule motion trajectory to construct a temperature field relative motion model;

[0088] That is, the specific formula is:

[0089]

[0090] in, It is expressed as the temperature data change rate corresponding to the acquisition time point t in the abnormal display area; Expressed as the gradient corresponding to the temperature data T; and It is expressed as the temperature data corresponding to x in the ampoule motion trajectory t and t The second derivative of ; γ is represented by the thermal diffusion coefficient.

[0091] Embodiment 4,

[0092] This embodiment is a further limitation of Embodiment 1, and step S3 is implemented by the following process:

[0093] The process of obtaining the modified data set includes:

[0094] Obtain the relative motion temperature data of the ampoule corresponding to the acquisition time point according to the temperature data change rate;

[0095] That is, the specific formula is:

[0096]

[0097] Wherein, T(t) represents the relative motion temperature data of the ampoule;

[0098] Data mapping is performed between the relative motion temperature data of the ampoule and the corresponding abnormal display area to obtain a correction data set corresponding to the abnormal display area.

[0099] In the above embodiment, it needs to be further explained that, according to obtaining the temperature data corresponding to the abnormal display area and obtaining the motion trajectory of the ampoule, the temperature data is coupled with the motion trajectory of the ampoule to establish a temperature field relative motion model, and the ampoule relative motion temperature data corresponding to the ampoule in the abnormal display area is obtained based on the temperature field relative motion model, and then the corrected data set is obtained; the temperature data corresponding to the abnormal display area can be better corrected to improve the growth quality.

[0100] Embodiment 5,

[0101] This embodiment is a further limitation of Embodiment 1, and step S4 is implemented by the following process:

[0102] Set the correction instruction corresponding to the correction data set. The process of correcting the correction data set includes:

[0103] A corresponding instruction code is set for each temperature data display area, marked as #i, and the correction instruction corresponding to the correction data set is (#i, T(t)). The correction instruction corresponding to the correction data set is sent to a preset temperature control device, and the abnormal display area and ampoule relative motion temperature data corresponding to the instruction code are obtained. Then, the temperature corresponding to the abnormal display area is adjusted to the ampoule relative motion temperature data, and the correction is completed.

[0104] Embodiment 6,

[0105] like Figure 3 As shown, the present invention also provides a supervision system for a CdZnTe crystal growth quality supervision method based on the Internet of Things, comprising the following modules:

[0106] Collection and deployment module: used to deploy sensors in the growth furnace based on the Bridgman method, collect temperature data and position data, establish a temperature field temperature cloud map through the temperature data and position data, and then establish a dynamic growth model;

[0107] Data association module: used to obtain the motion trajectory of the ampoule in real time according to the dynamic growth model, and to associate the relative motion with the temperature cloud map of the temperature field, thereby obtaining the relative motion model of the temperature field;

[0108] Correction data set generation module: used to obtain the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then obtain the corresponding correction data set;

[0109] Correction module: used to set the correction instructions corresponding to the correction data set and correct the correction data set.

[0110] The features and exemplary embodiments of various aspects of the present application are described in detail above. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is further described in detail in combination with the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application rather than to limit the present application. For those skilled in the art, the present application can be implemented without some of these specific details. The above description of the embodiments is merely to provide a better understanding of the present application by showing examples of the present application.

[0111] The above embodiments are only used to illustrate the technical method of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical method of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical method of the present invention.

Claims

1. A method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things, characterized in that: The method comprises the following steps: Step S1: deploying sensors in the growth furnace based on the Bridgman method, collecting temperature data and position data, establishing a temperature field temperature cloud map through the temperature data and position data, and then establishing a dynamic growth model; Step S2: obtaining the motion trajectory of the ampoule by real-time analysis based on the dynamic growth model, and correlating the relative motion with the temperature cloud map of the temperature field, thereby obtaining a relative motion model of the temperature field; Step S3: acquiring the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then acquiring the corresponding correction data set; Step S4: setting a correction instruction corresponding to the correction data set, and correcting the correction data set.

2. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 1, characterized in that: The process of deploying sensors in the growth furnace based on the Bridgman method to collect temperature data and position data includes: Structural mapping of the growth furnace is performed to obtain a growth furnace cylinder, and the growth furnace cylinder is divided into upper, middle and lower sections, and the upper middle section segmentation points and the middle and lower section segmentation points corresponding to the upper, middle and lower sections are obtained; and temperature points are respectively deployed in the upper, middle and lower sections, and marked as i, where i=1, 2, ..., j, and j is a positive integer; temperature sensors are deployed at the upper middle section segmentation points, the middle and lower section segmentation points and the temperature points to collect corresponding temperature data; A head position node and a center position node are set on the ampoule device, and a head position sensor and a center position sensor are installed on the head position node and the center position node respectively; the head position sensor is used to collect the inclination angle of the ampoule; the center position sensor is used to collect the horizontal position data and the vertical position data of the ampoule; A speed sensor is installed at the central position node to collect the ampoule relative speed data; the ampoule inclination angle, the ampoule horizontal position data, the vertical position data and the ampoule relative speed data are integrated to generate an ampoule motion data set.

3. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 2, characterized in that: The temperature field temperature cloud map establishment process includes: Set the cutting height corresponding to the temperature point, place each temperature point on the radius corresponding to the upper bottom surface of the cut growth furnace, use the axis as the critical surface to cut the growth furnace cylinder according to the cutting height to obtain the corresponding lower bottom surface of the cut growth furnace, and then obtain the cut growth furnace cylinder, and obtain the volume of the cut growth furnace cylinder, which is marked as the temperature data display area; connect the temperature data display areas corresponding to each temperature point according to the growth furnace cylinder to generate a temperature field temperature cloud map.

4. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 3, characterized in that: The process of establishing the dynamic growth model includes: A dynamic rectangular coordinate system is established with the central position node as the origin and the horizontal position data and vertical position data as the abscissa and ordinate respectively, and the relative velocity data of the ampoule is represented in the direction starting from the origin; then the dynamic rectangular coordinate system is mapped to the temperature field cloud map to construct a dynamic growth model.

5. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 4, characterized in that: The process of obtaining the ampoule motion trajectory includes: Taking the starting temperature point as the starting position, setting the starting acquisition time point and the acquisition cycle, obtaining the acquisition time point corresponding to each temperature point according to the acquisition cycle, and obtaining the real-time data set corresponding to the acquisition time point in real time based on the dynamic growth model, the real-time data set includes the temperature data display area where the central position node is located, temperature data and ampoule movement data set; Obtaining the ampoule motion trajectory according to the ampoule motion data set; That is, the specific formula is: Among them, x t and t It is represented as the motion trajectory of the ampoule corresponding to the acquisition time point t; and It is expressed as the horizontal position data and vertical position data of the ampoule corresponding to the acquisition time point t; t0 and v t It is expressed as the start time of collection and the relative speed data of the ampoule corresponding to the collection time point t; θ is the tilt angle of the ampoule.

6. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 5, characterized in that: The process of acquiring the temperature field relative motion model includes: Obtain the temperature data display area corresponding to the ampoule motion trajectory at the acquisition time point, and obtain the temperature data corresponding to the temperature data display area, set the corresponding temperature data threshold range according to the temperature data display area where the ampoule motion trajectory is located, and compare it with the corresponding temperature data; If the temperature data exists within the temperature data threshold range, the next acquisition time point is obtained, and the corresponding ampoule motion trajectory is obtained, and then the temperature data threshold range corresponding to the temperature data display area where the ampoule motion trajectory is located is compared again, until the temperature data corresponding to the temperature data display area where the acquisition time point is located does not exist within the temperature data threshold range, then the corresponding temperature data display area is marked as an abnormal display area; otherwise, the corresponding temperature data display area is marked as an abnormal display area; Acquire the ampoule relative speed data and the corresponding temperature data of the ampoule motion trajectory corresponding to the abnormal display area, and couple the ampoule relative speed data and the temperature data with the ampoule motion trajectory to construct a temperature field relative motion model; That is, the specific formula is: in, It is expressed as the temperature data change rate corresponding to the acquisition time point t in the abnormal display area; Expressed as the gradient corresponding to the temperature data T; and It is expressed as the temperature data corresponding to x in the ampoule motion trajectory t and t The second derivative of ; γ is represented by the thermal diffusion coefficient.

7. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 6, characterized in that: The process of obtaining the modified data set includes: Obtain the relative motion temperature data of the ampoule corresponding to the acquisition time point according to the temperature data change rate; That is, the specific formula is: Wherein, T(t) represents the relative motion temperature data of the ampoule; Data mapping is performed between the relative motion temperature data of the ampoule and the corresponding abnormal display area to obtain a correction data set corresponding to the abnormal display area.

8. The method for monitoring the growth quality of cadmium zinc telluride crystals based on the Internet of Things according to claim 7, characterized in that: Set the correction instruction corresponding to the correction data set. The process of correcting the correction data set includes: A corresponding instruction code is set for each temperature data display area, marked as #i, and the correction instruction corresponding to the correction data set is (#i, T(t)). The correction instruction corresponding to the correction data set is sent to a preset temperature control device, and the abnormal display area and ampoule relative motion temperature data corresponding to the instruction code are obtained. Then, the temperature corresponding to the abnormal display area is adjusted to the ampoule relative motion temperature data, and the correction is completed.

9. A CdZnTe crystal growth quality supervision system based on the Internet of Things, applied to a CdZnTe crystal growth quality supervision method based on the Internet of Things as claimed in any one of claims 1 to 8, characterized in that: Includes the following modules: Collection and deployment module: used to deploy sensors in the growth furnace based on the Bridgman method, collect temperature data and position data, establish a temperature field temperature cloud map through the temperature data and position data, and then establish a dynamic growth model; Data association module: used to obtain the motion trajectory of the ampoule in real time according to the dynamic growth model, and to associate the relative motion with the temperature cloud map of the temperature field, thereby obtaining the relative motion model of the temperature field; Correction data set generation module: used to obtain the relative motion temperature data of the ampoule based on the relative motion model of the temperature field, and then obtain the corresponding correction data set; Correction module: used to set the correction instructions corresponding to the correction data set and correct the correction data set.

Citation Information

Patent Citations

  • Device for growing tellurium-zinc-cadmium crystals by traveling heater method

    CN102864496A

  • Novel single-crystal furnace for zinc cadmium telluride single crystal and growth process

    CN107059132A

  • Cadmium zinc telluride single crystal furnace and growth process of cadmium zinc telluride single crystals

    CN110106555A

  • Intelligent growth method, system and equipment of cadmium zinc telluride crystal and storage medium

    CN115595667A

  • Remote control crystal growing device and its control method

    CN1425808A