Simulation evaluation device and method for insulation performance and material characteristics of ion sputtering grid mesh electrode

Abstract

The invention discloses a simulation evaluation device and method for insulation performance and material characteristics of an ion sputtering grid mesh electrode, and belongs to the technical field of ion thrusters. The device is provided with two insulation supports, the two insulation supports are respectively used for installing the simulation screen grid and the simulation acceleration grid, the simulation screen grid and the simulation acceleration grid are provided with corresponding holes, and the simulation screen grid and the simulation acceleration grid can be truly simulated. The device is placed in a sputtering chamber, the simulation screen grid and the simulation acceleration grid are bombarded through an ion source, and a sputtering test is carried out; field emission testing and breakdown testing are carried out on the sputtered simulation screen grid and simulation acceleration grid, the insulation performance of the simulation screen grid can be further studied, and meanwhile morphological characteristic analysis can be carried out on the simulation screen grid and the simulation acceleration grid through a scanning electron microscope and a laser scanning confocal microscope.

Description

Technical Field

[0001] The invention belongs to the technical field of ion thrusters, and in particular relates to a simulation evaluation device and method for the insulation performance and material characteristics of an ion sputtering grid electrode. Background Art

[0002] Ion thrusters have significant advantages in space propulsion due to their high specific impulse and versatility, making them crucial in space missions and have been widely used in space missions. The grid assembly of an ion thruster is used to extract and accelerate ions to generate thrust, and is one of the most critical components of an ion thruster. The grid assembly usually includes a screen grid with a positive voltage of more than one thousand volts, an acceleration grid with a negative voltage of several hundred volts, and a grounded deceleration grid. The distance between the two is usually less than 1 mm, so there is an extremely high electric field.

[0003] During the acceleration process of some ions being drawn out from the gate, they will hit the electrode due to charge exchange, transfer and collision, causing erosion on the electrode surface. This phenomenon is inevitable. Long-term sputtering erosion destroys the surface morphology of the gate, causing defects such as surface micro-convexities, burrs, and particles. These defects will significantly affect the insulation between the gates. Therefore, unexpected electrical breakdown between the gates is widely present in both ground simulation experiments and actual space applications.

[0004] At present, the research on the effect of ion bombardment on the performance of grid electrodes mainly focuses on aspects such as material erosion depth and sputtering rate, while there are few in-depth studies on the direct evaluation of the degradation of its insulation performance and the breakdown mechanism, and there is also a lack of evaluation methods for insulation-related material indicators. In addition, the existing insulation performance test methods often cannot accurately reflect the electric field distribution and breakdown behavior of the gate in a real working environment. Usually, simplified ball plate electrodes and grid electrodes are used for experiments, and there is a lack of systematic testing methods under the influence of ion sputtering. At the same time, some studies only focus on a single ion type or energy condition, and fail to fully cover the comprehensive effects of multiple ion sputtering conditions on the grid electrode, which limits the applicability and universality of the research results.

[0005] Therefore, there is an urgent need to propose a method for evaluating the insulation and material of the grid electrode after ion sputtering, which can be used to study the changes in the insulation performance of the grid electrode after ion sputtering, and to combine the material characterization technology to conduct a comprehensive analysis of the surface damage characteristics, so as to provide technical support for the optimal design and performance improvement of the ion thruster. Summary of the invention

[0006] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art and to provide a simulation evaluation device and method for the insulation performance and material characteristics of an ion sputtering grid electrode, so as to solve the problem in the prior art of lacking a device and method for evaluating the insulation and material characteristics of a grid electrode after ion sputtering.

[0007] In order to achieve the above object, the present invention adopts the following technical solutions: A simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode, comprising: Install the base plate; Two insulating brackets are provided, and the two insulating brackets are fixedly arranged on the installation base plate opposite to each other; The simulated screen grid is fixedly mounted on an insulating bracket; The simulated accelerating grid is fixedly mounted on an insulating bracket; The simulated screen grid and the simulated acceleration grid are arranged coaxially; The simulation screen grid is provided with a plurality of first holes, and the simulation acceleration grid is provided with a plurality of second holes. The diameter of the first hole is greater than the diameter of the second hole, and each first hole corresponds to a coaxial second hole.

[0008] A further improvement of the present invention is: Preferably, a plate of equal height is provided between the two insulating brackets.

[0009] Preferably, two equal-height plates are arranged between the two insulating supports, respectively arranged between the upper ends and between the lower ends of the two insulating supports.

[0010] Preferably, the simulated screen grid includes a first connecting outer ring, a first connecting arc surface and a screen grid area arranged from the outside to the inside; the screen grid area and the first connecting outer ring are respectively in two mutually parallel planes, and the radial section of the first connecting arc surface is perpendicular to the plane of the first connecting outer ring.

[0011] Preferably, the simulated acceleration grid includes a second connecting outer ring, a second connecting arc surface and an acceleration grid area arranged from the outside to the inside; the acceleration grid area and the second connecting outer ring are respectively in two parallel planes, and the radial section of the second connecting arc surface is perpendicular to the plane of the second connecting outer ring.

[0012] Preferably, the distance between the screen grid region and the acceleration grid region is smaller than the distance between the first connected outer ring and the second connected outer ring.

[0013] Preferably, a fixing groove is provided on the insulating bracket, and a coaxial through hole is provided at the center of the fixing groove; The first connecting outer ring is fixedly connected to the fixing groove; The second connecting outer ring is fixedly connected to the fixing groove.

[0014] Preferably, the fixing groove is provided with a plurality of third bolt holes equally divided along the outer circumference of the through hole; The first connecting outer ring is provided with a plurality of first bolt holes equally divided along the circumferential direction, and the second connecting outer ring is provided with a plurality of second bolt holes equally divided along the circumferential direction; The first bolt hole, the second bolt hole and the third bolt hole correspond to each other one by one.

[0015] A simulation evaluation method based on the above-mentioned ion sputtering grid electrode insulation performance and material characteristics comprises the following steps: Step 1, fixing a simulated screen grid and a simulated acceleration grid on two insulating brackets respectively to obtain a simulated evaluation device, and placing the simulated evaluation device in a sputtering chamber, with the simulated screen grid facing the ion source direction; Step 2, start the ion source, adjust the ion type and ion energy, set the beam density and sputtering time, generate a high-energy ion beam, bombard the simulated screen grid, part of the high-energy ion beam passes through the first hole, bombards the surface of the simulated acceleration grid, and completes the ion dose accumulation to simulate the sputtering effect under actual working conditions; Step 3, measuring the field emission current of the simulated screen grid and the simulated acceleration grid through a field emission test, and calculating the field enhancement factor; Step 4, applying a DC voltage to the simulated screen grid and the simulated acceleration grid after the field emission test, gradually increasing the voltage to measure the initial breakdown voltage, and evaluating the trend of the breakdown voltage changing with the number of discharges by repeated boost discharges to determine whether the insulation performance can be restored to the initial level; Step 5: Use a scanning electron microscope to observe the surface morphology and particle distribution of the simulated screen grid and the simulated acceleration grid, record the particle accumulation and morphology change characteristics of the surface of different materials after sputtering, and analyze the impact of sputtering on material properties.

[0016] Step 6: Use a laser scanning confocal microscope to perform a three-dimensional morphology scan on the surface of the simulated screen grid and the simulated acceleration grid, and measure the surface roughness and micro defect characteristics after the field emission test and breakdown.

[0017] Preferably, before step 3, the following steps are included: The surfaces of the simulated screen grid and the simulated accelerator grid are observed with high resolution by a scanning electron microscope, and the surfaces of the simulated screen grid and the simulated accelerator grid after sputtering are recorded. The surfaces of the simulated screen grid and the simulated accelerator grid are scanned in three dimensions by a laser scanning confocal microscope to obtain surface roughness data.

[0018] Compared with the prior art, the present invention has the following beneficial effects: The present invention discloses a simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode. The device is provided with two insulating brackets, which are respectively used to install a simulated screen grid and a simulated acceleration grid. The simulated screen grid and the simulated acceleration grid are provided with corresponding holes, which can truly simulate the screen grid and the acceleration grid. The device uses the insulating brackets to accurately align the holes of the simulated screen grid and the simulated acceleration grid to prevent errors such as sputtering deviation and local ion concentration caused by inaccurate hole alignment during the ion sputtering process. The following three functions can be achieved by the device: (1) Sputtering treatment simulating real working conditions By designing a simulated grid electrode structure, the sputtering damage on the grid electrode surface under actual ion thruster working conditions was successfully simulated. This method can generate microscopic defects similar to those in actual use environments (such as increased surface roughness, micro-convexities and burrs), significantly improving the experimental relevance and result reliability of subsequent tests.

[0019] (2) Scientific insulation performance evaluation method By measuring the initial breakdown voltage and the breakdown voltage that changes with the number of discharges, the voltage resistance and insulation recovery ability of the electrode can be evaluated. At the same time, the field enhancement factor is calculated through field emission testing, revealing the influence of surface morphology changes after sputtering on the electric field distribution. This evaluation method not only provides dynamic insulation performance data that cannot be obtained by traditional breakdown testing, but also provides a scientific basis for optimizing electrode design.

[0020] (3) Multi-dimensional material characterization technology Combining the advantages of scanning electron microscopy and laser scanning confocal microscopy, the present invention can quantitatively analyze the particle distribution, roughness and three-dimensional morphological characteristics of the electrode surface after sputtering. Scanning electron microscopy observation provides surface particle deposition and morphological details, while laser scanning confocal microscopy further reveals the spatial distribution and depth information of surface defects such as micro-convexities, burrs and cracks. This multi-dimensional characterization method effectively makes up for the limitations of a single characterization technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 The structure diagram of the simulation evaluation device for the insulation performance and material characteristics of the ion sputtering grid electrode of the present invention; Figure 2 It is a two-dimensional structure diagram of the simulated screen grid of the present invention; Figure 3 The three-dimensional structure diagram of the simulated screen grid of the present invention; Figure 4 A two-dimensional structure diagram of a simulated acceleration grid of the present invention; Figure 5 A three-dimensional structure diagram of the simulated acceleration grid of the present invention; Figure 6This is a structural diagram of the insulating support of the present invention; Figure 7 It is a schematic diagram of the structure of the contour plate of the present invention; Figure 8 It is a schematic diagram of the installation base plate structure of the present invention; Among them, 1. Insulating bracket; 2. Simulated screen grid; 3. Simulated acceleration grid; 4. Contour plate; 5. Mounting base plate; 11. Fixing groove; 12. Through hole; 13. Third bolt hole; 14. Rectangular notch; 21. First connecting outer ring; 22. First connecting arc surface; 23. Screen grid area; 24. First bolt hole; 25. First hole; 31. Second connecting outer ring; 32. Second connecting arc surface; 33. Acceleration grid area; 34. Second bolt hole; 35. Second hole. DETAILED DESCRIPTION

[0022] The present invention is further described in detail below in conjunction with the accompanying drawings: Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0023] This paper proposes a comprehensive evaluation and characterization method for the insulation degradation and material surface damage that may occur in ion thruster grid electrodes after high-energy ion sputtering. By simulating real working conditions, multi-dimensional testing and analysis are carried out to fully reveal the impact of sputtering effects on grid electrodes, providing a basis for material optimization and electrode design.

[0024] The first aspect of the present invention discloses a simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode, see Figure 1 , consisting of an insulating support 1, a simulated screen grid 2, a simulated acceleration grid 3, a contour plate 4 and a mounting base plate 5. This electrode structure is used to simulate a real thruster grid electrode and is placed in the ion region for sputtering in the experiment. Two insulating supports 1 are arranged opposite to each other, and the bottom ends of the two insulating supports 1 are fixedly mounted on the mounting base plate 5 together. Two contour plates 4 are arranged between the two insulating supports 1. The two contour plates 4 are clamped on the upper and lower ends of the two simulated screen grids 2 respectively. The upper end surface of the upper contour plate 4 is flush with the upper end surface of the insulating support 1. The lower contour plate 4 is arranged on the mounting base plate 5. The two contour plates 4 have the same thickness and can adjust the distance between the two insulating supports 1; the simulated screen grid 2 and the simulated acceleration grid 3 are respectively mounted on the two insulating supports 1.

[0025] See also Figure 2 and Figure 3In some embodiments of the present invention, the simulation screen grid 2 includes a first connection outer ring 21, a first connection arc surface 22 and a screen grid area 23 which are integrally connected from the outside to the inside; the first connection outer ring 21 is in the form of a circular ring, and a plurality of first bolt holes 24 are opened at equal intervals thereon for fixed connection with the insulating bracket 1, the first connection arc surface 22 is an annular arc surface protruding from the plane where the first connection outer ring 21 is located, the radial section of the first connection arc surface 22 is perpendicular to the section where the first connection outer ring 21 is located, the inner ring of the first connection arc surface 22 is used to be integrally connected with the screen grid area 23, the outer ring of the first connection arc surface 22 is used to be integrally connected with the first connection outer ring 21, the cross-section of the first connection arc surface 22 is an arc line, and the inner ring of the first connection arc surface 22 protrudes relative to the outer ring, so that the planes where the first connection outer ring 21 and the screen grid area 23 are located are two planes, the screen grid area 23 is surrounded by the first connection arc surface 22, and a plurality of first holes 25 for passing plasma are opened in the middle of the screen grid area 23.

[0026] As a preferred solution, the cross-section of the first connecting arc surface 22 is composed of arcs of two radians, and the curvature radius of the arc close to the screen grid area 23 is smaller than the curvature radius of the arc close to the first connecting outer ring 21, that is, the curvature degree of the arc close to the screen grid area 23 is greater than the curvature degree of the arc close to the first connecting outer ring 21. By dividing the first connecting arc surface 22 into two arc surfaces with different radians, the transition between the first connecting outer ring 21 and the screen grid area 23 is smoother, and the radial cross-sections of the two arc surfaces are on the same plane.

[0027] See also Figure 4 and Figure 5 The simulated acceleration grid 3 includes a second connection outer ring 31, a second connection arc surface 32 and an acceleration grid area 33 which are integrally connected from the outside to the inside; the second connection outer ring 31 is in the form of a circular ring, and a plurality of second bolt holes 34 are opened at equal intervals on it, which are used to be fixedly connected to the insulating bracket 1, the second connection arc surface 32 is an annular arc surface protruding from the plane where the second connection outer ring 31 is located, the inner ring of the second connection arc surface 32 is used to be integrally connected to the acceleration grid area 33, the outer ring of the second connection arc surface 32 is used to be integrally connected to the second connection outer ring 31, the cross-section of the second connection arc surface 32 is an arc line, and the inner ring of the second connection arc surface 32 protrudes relative to the outer ring, so that the planes where the second connection outer ring 31 and the acceleration grid area 33 are located are two planes, the acceleration grid area 33 is surrounded by the second connection arc surface 32, and a plurality of second holes 35 for passing plasma are opened in the acceleration grid area 33.

[0028] As a preferred solution, the cross-section of the second connecting arc surface 32 is composed of arcs of two radians, and the curvature radius of the arc close to the acceleration grid area 33 is smaller than the curvature radius of the arc close to the second connecting outer ring 31, that is, the curvature degree of the arc close to the acceleration grid area 33 is greater than the curvature degree of the arc close to the second connecting outer ring 31. By dividing the second connecting arc surface 32 into two arc surfaces with different radians, the transition between the second connecting outer ring 31 and the acceleration grid area 33 is smoother, and the radial cross-sections of the two arc surfaces are on the same plane.

[0029] It should be understood that the opening position and number of the first hole 25 in the screen grid area 23 are the same as the opening position and number of the second hole 35 in the acceleration grid area 33, so that the two can be aligned one by one when installed on the insulating bracket 1; the diameter of the first hole 25 is larger than the diameter of the second hole.

[0030] In some embodiments, the thickness of the acceleration grid region 33 is the same as the thickness of the simulated acceleration grid, and the thickness of the screen grid region 23 is the same as the thickness of the simulated screen grid; the opening position and number of the first holes 25 in the screen grid region 23 are the same as the simulated screen grid, and the opening position and number of the second holes 35 in the acceleration grid region 33 are the same as the simulated acceleration grid.

[0031] In the present invention, the simulated screen grid 2 and the simulated acceleration grid 3 are arranged as a structure with the center portion protruding outward. This design makes the electrode spacing in the middle sputtering area the shortest and the distance between the two end planes is farther. The arrangement of this structure makes the breakdown concentrated in the central area rather than the two end planes, avoiding the breakdown at the two ends or the surface discharge along the equal height plates, and can fully demonstrate the insulation performance after ion sputtering.

[0032] See also Figure 6 A fixing groove 11 is provided in the middle of the insulating support 1, and a coaxial through hole 12 is provided in the middle of the fixing groove 11 for the passage of plasma. The fixing groove 11 is arranged on the periphery of the through hole 12, and a plurality of third bolt holes 13 are arranged in an equally divided array in the circumferential direction around the through hole 12. The number of the third bolt holes 13 is greater than or equal to the number of the first bolt holes 24 and the second bolt holes 34, so that each of the first bolt holes 24 and the second bolt holes 34 can be matched and connected with a corresponding third bolt hole 13.

[0033] The diameter of the through hole 12 is larger than the area of ​​the screen grid region 23 and the acceleration grid region 33, so as to ensure that the ion beam can pass through the corresponding areas.

[0034] In some specific embodiments, the number, position and array spacing of the third bolt hole 13, the first bolt hole 24 and the second bolt hole 34 are equal and correspond to each other one by one, so that the simulated screen grid 2 and the simulated acceleration grid 3 are firmly connected when installed on the insulating bracket 1.

[0035] The number of the third bolt hole 13, the first bolt hole 24 and the second bolt hole 34 are all ≥ 3, more preferably 6, to ensure the firmness of the connection.

[0036] See also Figure 7 , is a structural schematic diagram of the contour plate 4, and the contour plate 4 is provided with threaded holes for fixing the contour plate 4 and the two insulating brackets 1 to be connected. By adjusting the thickness of the contour plate 4, the distance between the two insulating brackets 1 can be adjusted, and then the distance between the simulated screen grid 2 and the simulated acceleration grid 3 fixedly mounted on the two insulating brackets 1 can be adjusted. The contour plate 4 and the insulating bracket 1 are connected by screws.

[0037] In some specific embodiments, rectangular notches 14 are provided at both ends of the insulating bracket 1 for clamping the contour plate 4 so that part of the lower end surface of the contour plate 4 can be seated on the insulating bracket 1, thereby enhancing the firmness of the connection between the contour plate 4 and the insulating bracket 1.

[0038] See also Figure 8 , is a structural diagram of the mounting base plate 5, on which a plurality of threaded holes are provided for fixing two insulating brackets 1. It should be understood that the number and positions of the threaded holes are adjusted according to actual needs.

[0039] In a specific embodiment of the present invention, a simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode is disclosed. The insulating bracket 1 is a rectangular parallelepiped as a whole, and four 2 mm diameter through holes are punched at the four corners, and the center of the circle is 3 mm away from the edge. 0.8 mm × 6 mm rectangular parallelepipeds are cut off at both ends of the insulating bracket 1 to form a rectangular parallelepiped notch 14, which is used to connect and fix the equal height plate 4. In the central area of ​​the insulating bracket 1, a cylinder with a diameter of 24 mm and a depth of 0.8 mm is cut off to serve as a fixing groove 11 for preliminary fixing of the electrode. A 12 mm diameter cylindrical through hole is cut off in the center of the fixing groove 11 to serve as a through hole 12, and ions are incident or emitted from this area. Six 2 mm third bolt holes 13 are distributed on the outside of the through hole 12 in a 60-degree circumference to completely fix the simulated screen grid 2 or the simulated acceleration grid 3. The insulating bracket 1 is made of insulating material to isolate the voltage of the simulated screen grid 2 or the simulated acceleration grid 3.

[0040] The diameter of the simulated screen grid 2 is 24 mm, and it consists of two planes that are not in the same plane, namely the first connecting outer ring 21 and the screen grid area 23. The two planes are formed by two rounded corners with a curved radius of 2 mm and 10 mm respectively. When the simulated screen grid 2 and the simulated acceleration grid 3 are assembled, the distance between the middle area is shortened, so that the breakdown only occurs on the higher plane. There are 6 threaded holes distributed in a 60-degree circle on the first connecting outer ring 21, and the center of the threaded hole is 10 mm away from the center of the electrode, which is used to be completely fixed with the insulating bracket 1. There are 7 2.1 mm through holes distributed in the screen grid area 23, which are respectively distributed in a 60-degree circle at the center and the periphery, and the center distance is 2.4 mm. This area is used to simulate the screen grid of the ion thruster. The simulated acceleration grid 3 is similar to the above-mentioned geometric structure, the only difference is that the aperture of the central 7 holes is 1 mm, which is used to simulate the acceleration grid of the plasma thruster.

[0041] The contour plate 4 is a 6 mm × 7.9 mm × 32 mm cuboid, with a 5 mm diameter and 2.5 mm depth cylinder cut from the top surface, followed by a 2 mm diameter and 3.5 mm depth cylinder cut concentrically for fixing with the mounting base plate 5. 2 mm vias are punched at the vertical center positions on both sides of the contour plate 4, with a center distance of 26 mm, for fixing with the insulating bracket 1.

[0042] See also Figure 8 The mounting base plate 5 is a 32 mm × 32 mm × 4 mm cuboid, with four corners chamfered at 45 degrees and 2 mm, two cylinders cut out in the middle, the size is consistent with that of the equal height plate 4, the center distance is 17 mm, and there are four vias with a diameter of 2.4 mm around it.

[0043] Through the assembly and coordination of various parts, the electrode spacing can be flexibly controlled, and it can also be used for the assembly and experiment of electrodes of various materials.

[0044] Based on the above device, the present invention also discloses a simulation evaluation method for the insulation performance and material properties of an ion sputtering grid electrode, which specifically includes the following steps: Step 1: Install the device The simulated screen grid 2 and the simulated acceleration grid 3 are respectively installed in two insulating brackets 1, and the first bolt hole 24 and the third bolt hole 13 are connected correspondingly, and the second bolt hole 34 and the third bolt hole 13 are connected. The first connecting outer ring 21 and the periphery of the through hole 12 in the fixing groove 1 are fitted and connected, and the second connecting outer ring 31 and the periphery of the through hole 12 in the fixing groove 1 are fitted and connected; the insulating bracket 1 with the installed simulated screen grid 2 and the simulated acceleration grid 3 is fixedly installed on the installation base plate 5, and the contour plate 4 is also installed between the two insulating brackets 1; the protruding parts of the simulated screen grid 2 and the simulated acceleration grid 3 are both facing the inside between the two insulating brackets 1, and the two protruding parts are opposite to each other, so as to obtain an installed simulation evaluation device.

[0045] It should be noted that, in this step, each first bolt hole 24 corresponds to a second bolt hole 34 and they are coaxial.

[0046] Step 2, sputtering experiment In the sputtering experiment, the two simulated electrodes (including the simulated screen grid 2 and the simulated acceleration grid 3) are first cleaned to remove surface contamination, and then the entire simulated evaluation device is fixed in a vacuum chamber, the chamber is filled with an appropriate amount of inert gas (such as argon or xenon), and the ion source is started to generate a high-energy ion beam to sputter the electrode with a set energy (such as 600 eV or 1200 eV) and beam density (such as 100 µA). The ion beam evenly bombards the electrode surface to simulate material erosion under real working conditions. The process may cause surface atomic sputtering, micro-convex formation, roughness changes, and particle accumulation. After sputtering is completed, the sputtering conditions (ion type, energy, etc.) are marked to provide a basis for subsequent insulation performance evaluation and material characterization experiments.

[0047] Step 3: Insulation performance evaluation (1) Field enhancement factor test The clamping end of the measuring device is connected to the bolts of the fixed simulated screen grid 2 and the simulated acceleration grid 3. A high-precision voltage source and current measuring equipment are used to gradually apply DC voltage and synchronously collect current. The field enhancement factor formula is used to calculate the field enhancement factor. , where is the field-induced current (A), is the enhanced electric field strength (V / m), is the emission area (m 2 ), is the work function (eV). It can be calculated that , combined with , where is the voltage across the gap, is the electrode spacing, the field-induced enhancement factor can be calculated The field enhancement factor of the electrode surface before and after sputtering is compared, and the influence of local field intensity changes caused by surface defects such as micro-convexities and burrs on the electric field distribution and breakdown behavior is analyzed.

[0048] (2) Test of initial breakdown voltage after sputtering For different ion types (such as Ar + 、Xe + The DC voltage is gradually increased until the electrode breaks down, and the breakdown voltage value is recorded. The initial breakdown voltage is used as a benchmark indicator of the electrode insulation performance to measure the direct impact of sputtering on the insulation strength. The difference in the initial breakdown voltage of different materials (such as graphite, molybdenum, stainless steel, etc.) after sputtering is analyzed to clarify the correlation between material properties and sputtering effect.

[0049] (3) Test on the change of breakdown voltage with discharge times After the initial breakdown, the electrode is subjected to multiple discharge tests, and the trend of the breakdown voltage after each discharge is recorded. Analyze whether the breakdown voltage gradually increases with the increase in the number of discharges, and whether it tends to be stable, and observe the recovery ability of the electrode insulation performance. The trend of the breakdown voltage change is correlated with the changes in sputtering-induced surface defects (such as cracks and increased roughness) to explore the relationship between the material repair ability and the surface damage characteristics.

[0050] Step 4: Material property evaluation (1) Scanning electron microscopy The electrode surface was observed at high resolution using a scanning electron microscope, with a focus on recording the following features: the distribution density and shape of the particles on the surface after sputtering. Changes in surface morphology under different ion types and energies, such as material peeling and hole formation. Surface damage characteristics of different materials and their differences in sensitivity to sputtering. Comparison of images before and after sputtering to quantitatively evaluate the degree of sputtering-induced surface particle accumulation and material erosion.

[0051] (2) Laser scanning confocal microscopy Use a laser scanning confocal microscope to scan the electrode surface in three dimensions and obtain surface roughness data. Analyze the effect of sputtering on surface roughness, focusing on the formation of structural defects such as micro-convexities, burrs and cracks. Use three-dimensional images to display the spatial distribution characteristics of sputtering damage on the electrode surface and clarify the evolution of surface morphology under different sputtering conditions. Compare the changes in surface roughness of different materials and explore the influence of materials on sputtering.

[0052] In some embodiments of the present invention, after step 2, it is necessary to perform high-resolution observation of the electrode surface using a scanning electron microscope to record the distribution density and shape of surface particles before the field enhancement factor test after sputtering and before the breakdown test; use a laser scanning confocal microscope to perform a three-dimensional morphology scan of the grid electrode surface to obtain surface roughness data.

[0053] By introducing this step, it is possible to compare the changes in the electrode surface morphology before and after the field enhancement factor test, and before and after the breakdown test.

[0054] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In the description of the present invention, the first feature "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features not being in direct contact but being in contact through another feature between them.

[0055] In the description of the present invention, “on”, “over” and “above” a first feature from a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.

[0056] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0057] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0058] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

[0059] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode, characterized in that: include: Install the bottom plate (5); Two insulating brackets (1) are provided, and the two insulating brackets (1) are fixedly arranged on the mounting base plate (5) in a relative manner; A simulated screen grid (2) is fixedly mounted on an insulating bracket (1); A simulated acceleration grid (3) is fixedly mounted on an insulating bracket (1); The simulated screen grid (2) and the simulated acceleration grid (3) are arranged coaxially; The simulated screen grid (2) is provided with a plurality of first holes (25), and the simulated acceleration grid (3) is provided with a plurality of second holes (35). The diameter of the first hole (25) is greater than the diameter of the second hole (35), and each first hole (25) corresponds to a coaxial second hole (35).

2. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that: A plate of equal height (4) is provided between the two insulating brackets (1).

3. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 2, characterized in that: Two equal-height plates (4) are arranged between the two insulating supports (1), and are respectively arranged between the upper ends and between the lower ends of the two insulating supports (1).

4. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that: The simulated screen grid (2) comprises a first connecting outer ring (21), a first connecting curved surface (22) and a screen grid area (23) arranged from the outside to the inside; the screen grid area (23) and the first connecting outer ring (21) are respectively located on two mutually parallel planes, and a radial cross section of the first connecting curved surface (22) is perpendicular to the plane of the first connecting outer ring (21).

5. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 4, characterized in that: The simulated acceleration grid (3) comprises a second connection outer ring (31), a second connection arc surface (32) and an acceleration grid region (33) arranged from the outside to the inside; the acceleration grid region (33) and the second connection outer ring (31) are respectively located on two mutually parallel planes, and the radial cross section of the second connection arc surface (32) is perpendicular to the plane of the second connection outer ring (31).

6. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 5, characterized in that: The distance between the screen grid region (23) and the acceleration grid region (33) is smaller than the distance between the first connected outer ring (21) and the second connected outer ring (31).

7. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 5, characterized in that: The insulating support (1) is provided with a fixing groove (11), and a coaxial through hole (12) is provided at the center of the fixing groove (11); The first connecting outer ring (21) and the fixing groove (11) are fixedly connected; The second connecting outer ring (31) and the fixing groove (11) are fixedly connected.

8. The device for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 7, characterized in that: The fixing groove (11) is provided with a plurality of third bolt holes (13) equally divided along the circumferential direction of the outer periphery of the through hole (12); The first connecting outer ring (21) is provided with a plurality of first bolt holes (24) equally divided along the circumferential direction, and the second connecting outer ring (31) is provided with a plurality of second bolt holes (34) equally divided along the circumferential direction; The first bolt hole (24), the second bolt hole (34) and the third bolt hole (13) correspond one to one.

9. A simulation evaluation method for the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that: The following steps are involved: Step 1, fixing a simulated screen grid (2) and a simulated acceleration grid (3) on two insulating brackets (1) respectively to obtain a simulated evaluation device, and placing the simulated evaluation device in a sputtering chamber, with the simulated screen grid (2) facing the ion source direction; Step 2, starting the ion source, adjusting the ion type and ion energy, setting the beam density and sputtering time, generating a high-energy ion beam, bombarding the simulated screen grid (2), part of the high-energy ion beam passing through the first hole (25), bombarding the surface of the simulated acceleration grid (3), completing ion dose accumulation to simulate the sputtering effect under actual working conditions; Step 3, measuring the field emission current of the simulated screen grid (2) and the simulated acceleration grid (3) through a field emission test, and calculating the field enhancement factor; Step 4, applying a DC voltage to the simulated screen grid (2) and the simulated acceleration grid (3) after the field emission test, gradually increasing the voltage to measure the initial breakdown voltage, and evaluating the trend of the breakdown voltage changing with the number of discharges by repeated boost discharges to determine whether the insulation performance can be restored to the initial level; Step 5, using a scanning electron microscope to observe the surface morphology and particle distribution of the simulated screen grid (2) and the simulated acceleration grid (3), record the particle accumulation and morphology change characteristics of the surfaces of different materials after sputtering, and analyze the influence of sputtering on the material properties; Step 6, using a laser scanning confocal microscope to perform a three-dimensional morphology scan on the surface of the simulated screen grid (2) and the simulated acceleration grid (3), and measure the surface roughness and microscopic defect characteristics after the field emission test and breakdown.

10. The method for simulating and evaluating the insulation performance and material properties of an ion sputtering grid electrode according to claim 9, characterized in that: Before step 3, the following steps are included: The surfaces of the simulated screen grid (2) and the simulated acceleration grid (3) are observed at high resolution by a scanning electron microscope, and the surfaces of the simulated screen grid (2) and the simulated acceleration grid (3) after sputtering are recorded. The surfaces of the simulated screen grid (2) and the simulated acceleration grid (3) are scanned in three dimensions by a laser scanning confocal microscope to obtain surface roughness data.

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