An apparatus and method for simulating the insulating properties of ion sputtering grid electrodes and material characteristics

Abstract

The application discloses a kind of simulation evaluation device and method of ion sputtering grid electrode insulation performance and material characteristics, belong to ion thruster technical field.The device is provided with two insulation supports, two insulation supports are used to install simulation screen grid and simulation acceleration grid respectively, simulation screen grid and simulation acceleration grid are provided with corresponding holes, can be true simulation screen grid and acceleration grid.The device is placed in sputtering chamber, and simulation screen grid and simulation acceleration grid are bombarded by ion source, and sputtering test is carried out;Field emission test and breakdown test are carried out to simulation screen grid and simulation acceleration grid after sputtering, further can study the insulation performance of simulation screen grid, and simultaneously can be carried out topographic feature analysis to simulation screen grid and simulation acceleration grid by scanning electron microscope and laser scanning confocal microscope.

Description

Technical Field

[0001] This invention belongs to the field of ion thruster technology, specifically relating to a simulation evaluation device and method for the insulation performance and material properties of ion sputtering grid electrodes. Background Technology

[0002] Ion thrusters, with their high specific impulse and versatility, offer significant advantages in space propulsion, making them crucial for space missions and leading to their widespread application in aerospace applications. The gate assembly of an ion thruster, used to extract and accelerate ions to generate thrust, is one of its most critical components. The gate assembly typically consists of a positive grid of over 1000 volts, an accelerating grid of several hundred volts, and a grounded decelerating grid. The spacing between these grids is usually less than 1 mm, resulting in an extremely high electric field.

[0003] During the acceleration process of some ions extracted from between the gates, they collide with the electrodes due to charge exchange, transfer, and collisions, causing erosion of the electrode surface. This phenomenon is unavoidable. Long-term sputtering erosion damages the gate surface morphology, resulting in defects such as surface micro-bumps, burrs, and particles. These defects significantly affect the insulation between the gates. Therefore, unintended electrical breakdown between gates is widespread in both terrestrial simulation experiments and actual space applications.

[0004] Currently, research on the impact of ion bombardment on gate electrode performance mainly focuses on material erosion depth and sputtering rate, while in-depth studies on direct assessment of insulation performance degradation and breakdown mechanisms are limited, and there is a lack of evaluation methods for insulation-related material indicators. Furthermore, existing insulation performance testing methods often fail to accurately reflect the electric field distribution and breakdown behavior of the gate electrode under real-world operating conditions. These methods typically employ simplified ball-and-plate electrodes and gate electrodes, lacking systematic testing methods specifically for the effects of ion sputtering. Additionally, some studies focus only on single ion types or energy conditions, failing to comprehensively cover the combined effects of multiple ion sputtering conditions on the gate electrode, which limits the applicability and universality of the research results.

[0005] Therefore, there is an urgent need to propose a method for evaluating the insulation and materials of the grid electrode after ion sputtering. This method can be used to study the changes in the insulation performance of the grid electrode after ion sputtering, and to combine it with material characterization techniques to comprehensively analyze the surface damage characteristics, thereby providing technical support for the optimized design and performance improvement of ion thrusters. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a device and method for simulating and evaluating the insulation performance and material properties of ion sputtered grid electrodes, so as to solve the problem that there is no device and method for evaluating the insulation and material properties of grid electrodes after ion sputtering in the prior art.

[0007] To achieve the above objectives, the present invention employs the following technical solution:

[0008] A simulation and evaluation device for the insulation performance and material properties of ion sputtered grid electrodes, comprising:

[0009] Install base plate;

[0010] There are two insulating brackets, which are fixedly mounted opposite each other on the mounting base plate.

[0011] The simulated screen is fixedly mounted on an insulating bracket;

[0012] The simulated acceleration grid is fixedly mounted on an insulating bracket;

[0013] The simulated screen and the simulated acceleration grid are arranged on the same axis;

[0014] The simulated screen has several first holes, and the simulated acceleration grid has several second holes. The diameter of the first holes is larger than the diameter of the second holes, and each first hole corresponds to a second hole on the same axis.

[0015] A further improvement of the present invention is that:

[0016] Preferably, a level plate is provided between the two insulating supports.

[0017] Preferably, two level plates are provided between the two insulating supports, respectively positioned between the upper and lower ends of the two insulating supports.

[0018] Preferably, the simulated screen includes a first connecting outer ring, a first connecting arc surface, and a screen area arranged from the outside to the inside; the screen area and the first connecting outer ring are respectively on two mutually parallel planes, and the radial section of the first connecting arc surface is perpendicular to the plane of the first connecting outer ring.

[0019] Preferably, the simulated acceleration grid includes a second connecting outer ring, a second connecting arc surface, and an acceleration grid region arranged from the outside to the inside; the acceleration grid region and the second connecting outer ring are respectively on two mutually parallel planes, and the radial section of the second connecting arc surface is perpendicular to the plane of the second connecting outer ring.

[0020] Preferably, the distance between the screen area and the acceleration area is less than the distance between the first connecting outer ring and the second connecting outer ring.

[0021] Preferably, the insulating bracket has a fixing groove, and a coaxial through hole is formed in the center of the fixing groove;

[0022] The first connecting outer ring and the fixing groove are fixedly connected;

[0023] The second connecting outer ring and the fixing groove are fixedly connected.

[0024] Preferably, the fixing groove is provided with a plurality of third bolt holes evenly distributed around the periphery of the through hole;

[0025] The first connecting outer ring is provided with a plurality of first bolt holes evenly distributed along the circumference, and the second connecting outer ring is provided with a plurality of second bolt holes evenly distributed along the circumference;

[0026] The first bolt hole, the second bolt hole, and the third bolt hole correspond one-to-one.

[0027] A simulation evaluation method for the insulation performance and material properties of ion sputtered grid electrodes, as described above, includes the following steps:

[0028] Step 1: Fix the simulated screen and the simulated acceleration grid onto two insulating supports to obtain a simulation evaluation device. Place the simulation evaluation device in the sputtering chamber with the simulated screen facing the ion source.

[0029] Step 2: Start the ion source, adjust the ion type and ion energy, set the beam density and sputtering time, generate a high-energy ion beam, bombard the simulated screen grid, and part of the high-energy ion beam passes through the first hole and bombards the surface of the simulated accelerating grid to complete the ion dose accumulation to simulate the sputtering effect under actual working conditions.

[0030] Step 3: Measure the field emission current of the simulated screen grid and the simulated accelerating grid through field emission testing, and calculate the field emission enhancement factor;

[0031] Step 4: Apply DC voltage to the simulated screen and simulated accelerating grid after field emission test, gradually increase the voltage to measure the initial breakdown voltage, and evaluate the trend of breakdown voltage with the number of discharges by repeated boost discharge to determine whether the insulation performance can be restored to the initial level.

[0032] Step 5: Use a scanning electron microscope to observe the surface morphology and particle distribution of the simulated screen and simulated acceleration grid, record the particle accumulation and morphological changes of different materials on the surface after sputtering, and analyze the effect of sputtering on material properties.

[0033] Step 6: Use a laser scanning confocal microscope to perform three-dimensional morphological scanning on the surfaces of the simulated screen and the simulated acceleration grid, and measure the surface roughness and micro-defect characteristics after field emission testing and breakdown.

[0034] Preferably, before step 3, the following steps are included:

[0035] High-resolution observation of the surfaces of the simulated screen and the simulated acceleration grating was performed using a scanning electron microscope to record the surfaces of the simulated screen and the simulated acceleration grating after sputtering. The three-dimensional morphology of the surfaces of the simulated screen and the simulated acceleration grating was then scanned using a laser scanning confocal microscope to obtain surface roughness data.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] This invention discloses a simulation evaluation device for the insulation performance and material properties of ion sputtering grid electrodes. The device comprises two insulating supports for mounting a simulated grid and a simulated accelerating grid, respectively. The simulated grid and accelerating grid have corresponding holes, enabling realistic simulation of the grid and accelerating grid. The insulating supports ensure precise alignment of the holes in the simulated grid and accelerating grid, preventing sputtering offset and localized ion concentration errors caused by misalignment during ion sputtering. This device achieves the following three functions:

[0038] (1) Sputtering treatment simulating real working conditions

[0039] By designing a simulated grid electrode structure, sputtering damage on the grid electrode surface under actual ion thruster operating conditions was successfully simulated. This method can generate microscopic defects (such as increased surface roughness, micro-protrusions, and burrs) similar to those in actual use environments, significantly improving the experimental relevance and reliability of subsequent tests.

[0040] (2) Scientific methods for evaluating insulation performance

[0041] By measuring the initial breakdown voltage and the breakdown voltage varying with the number of discharges, the withstand voltage performance and insulation recovery capability of the electrode can be evaluated. Simultaneously, by calculating the field-induced enhancement factor through field emission testing, the influence of surface morphology changes after sputtering on the electric field distribution is revealed. This evaluation method not only provides dynamic insulation performance data that is unavailable through traditional breakdown testing but also offers a scientific basis for optimizing electrode design.

[0042] (3) Multidimensional material characterization techniques

[0043] By combining the advantages of scanning electron microscopy (SEM) and laser scanning confocal microscopy (LSM), this invention enables quantitative analysis of particle distribution, roughness, and three-dimensional morphology features on the surface of sputtered electrodes. SEM provides details of surface particle deposition and morphology, while LSM further reveals the spatial distribution and depth information of defects such as surface micro-protrusions, burrs, and cracks. This multi-dimensional characterization method effectively overcomes the limitations of single characterization techniques. Attached Figure Description

[0044] Figure 1This is a structural diagram of the simulation and evaluation device for the insulation performance and material properties of the ion sputtering grid electrode of the present invention;

[0045] Figure 2 This is a two-dimensional structural diagram of the simulated screen grid of the present invention;

[0046] Figure 3 This is a three-dimensional structural diagram of the simulated screen grid of the present invention;

[0047] Figure 4 This is a two-dimensional structural diagram of the analog acceleration gate of the present invention;

[0048] Figure 5 This is a three-dimensional structural diagram of the analog acceleration gate of the present invention;

[0049] Figure 6 This is a structural diagram of the insulating support of the present invention;

[0050] Figure 7 This is a schematic diagram of the contour plate structure of the present invention;

[0051] Figure 8 This is a schematic diagram of the mounting base plate structure of the present invention;

[0052] Among them, 1. Insulating bracket; 2. Simulated screen grid; 3. Simulated acceleration grid; 4. Contour plate; 5. Mounting base plate; 11. Fixing groove; 12. Through hole; 13. Third bolt hole; 14. Cuboid notch; 21. First connecting outer ring; 22. First connecting arc surface; 23. Screen grid area; 24. First bolt hole; 25. First hole; 31. Second connecting outer ring; 32. Second connecting arc surface; 33. Acceleration grid area; 34. Second bolt hole; 35. Second hole. Detailed Implementation

[0053] The present invention will now be described in further detail with reference to the accompanying drawings:

[0054] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0055] This invention addresses the potential degradation of insulation performance and surface damage to the grid electrodes of ion thrusters after high-energy ion sputtering, proposing a comprehensive evaluation and characterization method. Through simulation of real-world operating conditions, multi-dimensional testing and analysis are conducted to fully reveal the impact of sputtering on the grid electrodes, providing a basis for material optimization and electrode design.

[0056] The first aspect of this invention discloses a simulation evaluation device for the insulation performance and material properties of ion sputtering grid electrodes, see [link to relevant documentation]. Figure 1 The electrode structure consists of an insulating support 1, a simulated grid 2, a simulated acceleration grid 3, contour plates 4, and a mounting base 5. This electrode structure simulates the grid electrodes of a real thruster and is placed in the ion region for sputtering during experiments. Two insulating supports 1 are positioned opposite each other, with their bottom ends fixedly mounted on the mounting base 5. Two contour plates 4 are positioned between the two insulating supports 1, clamping the upper and lower ends of the two simulated grids 2 respectively. The upper surface of the upper contour plate 4 is flush with the upper surface of the insulating support 1, while the lower contour plate 4 is mounted on the mounting base 5. The two contour plates 4 have the same thickness, allowing adjustment of the distance between the two insulating supports 1. The simulated grid 2 and the simulated acceleration grid 3 are respectively mounted on the two insulating supports 1.

[0057] See Figure 2 and Figure 3 In some embodiments of the present invention, the simulated grid 2 includes a first connecting outer ring 21, a first connecting arc surface 22, and a grid area 23 integrally connected from the outside to the inside; the first connecting outer ring 21 is in the form of a ring, and a plurality of first bolt holes 24 are equally spaced on it for fixed connection with the insulating support 1; the first connecting arc surface 22 is an annular arc surface protruding from the plane of the first connecting outer ring 21; the radial section of the first connecting arc surface 22 is perpendicular to the section of the first connecting outer ring 21; the inner ring of the first connecting arc surface 22 is integrally connected with the grid area 23; the outer ring of the first connecting arc surface 22 is integrally connected with the first connecting outer ring 21; the section of the first connecting arc surface 22 is an arc; the inner ring of the first connecting arc surface 22 protrudes relative to the outer ring, so that the planes of the first connecting outer ring 21 and the grid area 23 are two planes; the grid area 23 is surrounded by the first connecting arc surface 22; and a plurality of first holes 25 for plasma to pass through are opened in the middle of the grid area 23.

[0058] As a preferred embodiment, the cross-section of the first connecting arc surface 22 is composed of two arcs with different curvatures. The radius of curvature of the arc near the screen grid area 23 is smaller than that of the arc near the first connecting outer ring 21. That is, the curvature of the arc near the screen grid area 23 is greater than that of the arc near the first connecting outer ring 21. By dividing the first connecting arc surface 22 into two arc surfaces with different curvatures, the transition between the first connecting outer ring 21 and the screen grid area 23 is smoother, and the radial cross-sections of the two arc surfaces are on the same plane.

[0059] See Figure 4 and Figure 5The simulated acceleration grid 3 includes a second connecting outer ring 31, a second connecting arc surface 32, and an acceleration grid region 33 integrally connected from the outside to the inside. The second connecting outer ring 31 is in the form of a ring, with a plurality of second bolt holes 34 evenly spaced on it for fixed connection with the insulating bracket 1. The second connecting arc surface 32 is an annular arc surface that protrudes from the plane of the second connecting outer ring 31. The inner ring of the second connecting arc surface 32 is integrally connected with the acceleration grid region 33, and the outer ring of the second connecting arc surface 32 is integrally connected with the second connecting outer ring 31. The cross-section of the second connecting arc surface 32 is an arc. The inner ring of the second connecting arc surface 32 protrudes relative to the outer ring, so that the planes of the second connecting outer ring 31 and the acceleration grid region 33 are two planes. The acceleration grid region 33 is surrounded by the second connecting arc surface 32, and a plurality of second holes 35 for plasma to pass through are opened in the center of the acceleration grid region 33.

[0060] As a preferred embodiment, the cross-section of the second connecting arc surface 32 is composed of two arcs with different curvatures. The radius of curvature of the arc near the acceleration gate region 33 is smaller than that of the arc near the second connecting outer ring 31. That is, the curvature of the arc near the acceleration gate region 33 is greater than that of the arc near the second connecting outer ring 31. By dividing the second connecting arc surface 32 into two arc surfaces with different curvatures, the transition between the second connecting outer ring 31 and the acceleration gate region 33 is smoother, and the radial cross-sections of the two arc surfaces are on the same plane.

[0061] It should be understood that the position and number of the first hole 25 in the screen area 23 are the same as the position and number of the second hole 35 in the acceleration area 33, so that they can be aligned one by one when installed on the insulating bracket 1; the diameter of the first hole 25 is larger than the diameter of the second hole.

[0062] In some embodiments, the thickness of the acceleration gate region 33 is the same as the thickness of the simulated acceleration gate, and the thickness of the screen gate region 23 is the same as the thickness of the simulated screen gate; the opening position and number of the first hole 25 in the screen gate region 23 are the same as those of the simulated screen gate, and the opening position and number of the second hole 35 in the acceleration gate region 33 are the same as those of the simulated acceleration gate.

[0063] In this invention, the simulated screen grid 2 and the simulated acceleration grid 3 are configured as structures that protrude outward from the center. This design makes the electrode spacing in the middle sputtering region the closest and the distance between the two end planes far. This structure makes the breakdown concentrated in the central region rather than the two end planes, avoiding breakdown at both ends or surface discharge along the contour plate, and can fully demonstrate the insulation performance after ion sputtering.

[0064] See Figure 6The insulating support 1 has a fixing groove 11 in the middle, and a coaxial through hole 12 in the middle of the fixing groove 11 for plasma to pass through. Around the through hole 12, the fixing groove 11 has a plurality of third bolt holes 13 evenly arranged in a circumferential array. The number of third bolt holes 13 is greater than or equal to the number of first bolt holes 24 and second bolt holes 34, ensuring that each first bolt hole 24 and second bolt hole 34 can be matched and connected with a corresponding third bolt hole 13.

[0065] The diameter of the through-hole 12 is larger than the area of ​​the screen region 23 and the acceleration region 33, ensuring that the ion beam can pass through the corresponding region.

[0066] In some specific embodiments, the number, position and array spacing of the third bolt hole 13, the first bolt hole 24 and the second bolt hole 34 are all equal and correspond to each other, so that the simulated screen 2 and the simulated acceleration grid 3 are firmly connected when they are installed on the insulating bracket 1.

[0067] The number of the third bolt hole 13, the first bolt hole 24, and the second bolt hole 34 are all ≥3, and more preferably 6, to ensure the firmness of the connection.

[0068] See Figure 7 The diagram shows the structure of the contour plate 4. The contour plate 4 has threaded holes for fixing the contour plate 4 and the two insulating supports 1. By adjusting the thickness of the contour plate 4, the distance between the two insulating supports 1 can be adjusted, and thus the distance between the simulated screen grid 2 and the simulated acceleration grid 3 fixedly installed on the two insulating supports 1 can be adjusted. The contour plate 4 and the insulating supports 1 are connected by screws.

[0069] In some specific embodiments, the insulating bracket 1 has cuboid notches 14 at both ends for mounting the contour plate 4, so that part of the lower end face of the contour plate 4 can sit on the insulating bracket 1, thereby enhancing the firmness of the connection between the contour plate 4 and the insulating bracket 1.

[0070] See Figure 8 The diagram shows the structure of the mounting base plate 5. The mounting base plate 5 has several threaded holes for fixing two insulating brackets 1. It should be understood that the number and position of the threaded holes can be adjusted according to actual needs.

[0071] In a specific embodiment of the present invention, a simulation evaluation device for the insulation performance and material properties of ion sputtering grid electrodes is disclosed. The insulating support 1 is generally rectangular, with four 2 mm diameter through holes at its four corners, the center of which is 3 mm from the edge. A 0.8 mm × 6 mm rectangular section is cut off at both ends of the insulating support 1, forming a rectangular notch 14 for connecting and fixing the contour plate 4. A cylinder with a diameter of 24 mm and a depth of 0.8 mm is cut off in the central region of the insulating support 1, serving as a fixing groove 11 for initial electrode fixing. A 12 mm diameter cylindrical through-hole is cut off in the center of the fixing groove 11, serving as a through-hole 12 through which ions enter or exit. Six 2 mm third bolt holes 13 are distributed at a 60-degree circumference on the outer side of the through-hole 12 for completely fixing the simulated grid 2 or simulated acceleration grid 3. The insulating support 1 is made of insulating material to isolate the voltage of the simulated grid 2 or simulated acceleration grid 3.

[0072] The simulated grid 2 has a diameter of 24 mm and consists of two non-plane surfaces: the first connecting outer ring 21 and the grid region 23. These two surfaces are joined by two rounded corners with radii of 2 mm and 10 mm respectively. This design brings the simulated grid 2 and the simulated acceleration grid 3 closer together, ensuring that breakdown only occurs on the higher plane. Six threaded holes are distributed in a 60-degree circle on the first connecting outer ring 21, with the center of each hole 10 mm from the electrode center, for complete fixation to the insulating support 1. Seven 2.1 mm through holes are distributed in the grid region 23, located at the center and outer perimeter in a 60-degree circle, with a center-to-center distance of 2.4 mm. This area is used to simulate the grid of the ion thruster. The simulated acceleration grid 3 has a similar geometry, except that the diameter of the seven central holes is 1 mm, and it is used to simulate the acceleration grid of the plasma thruster.

[0073] The contour plate 4 is a 6 mm × 7.9 mm × 32 mm cuboid. A cylinder with a diameter of 5 mm and a depth of 2.5 mm is cut off from the top surface, followed by a concentric cylinder with a diameter of 2 mm and a depth of 3.5 mm for fixing to the mounting base plate 5. 2 mm through holes with a center-to-center distance of 26 mm are drilled at the vertical center positions on both sides of the contour plate 4 for fixed connection with the insulating bracket 1.

[0074] See Figure 8 The mounting base plate 5 is a 32 mm × 32 mm × 4 mm cuboid with 45-degree 2 mm chamfers at the four corners. Two cylinders are cut out in the middle, which are the same size as the contour plate 4. The center distance between the cylinders is 17 mm, and there are 4 through holes with a diameter of 2.4 mm around the perimeter.

[0075] By assembling and fitting the various parts together, the electrode spacing can be flexibly controlled, and it can also be used for the assembly and experimentation of electrodes made of various materials.

[0076] Based on the above-mentioned device, the present invention also discloses a simulation evaluation method for the insulation performance and material properties of ion sputtering grid electrodes, the method specifically including the following steps:

[0077] Step 1, Install the equipment

[0078] The simulated screen 2 and the simulated acceleration grid 3 are respectively installed in two insulating brackets 1. The first bolt hole 24 and the third bolt hole 13 are connected accordingly, and the second bolt hole 34 and the third bolt hole 13 are connected. The first connecting outer ring 21 is fitted to the periphery of the through hole 12 in the fixing groove 1, and the second connecting outer ring 31 is fitted to the periphery of the through hole 12 in the fixing groove 1. The insulating brackets 1 with the simulated screen 2 and the simulated acceleration grid 3 installed are fixedly installed on the mounting base plate 5, and the level plate 4 is also installed between the two insulating brackets 1. The protruding parts of the simulated screen 2 and the simulated acceleration grid 3 both face the interior between the two insulating brackets 1, and the two protruding parts are opposite each other, thus obtaining the installed simulated evaluation device.

[0079] It should be noted that in this step, each first bolt hole 24 corresponds to a second bolt hole 34, and they are coaxial.

[0080] Step 2, Sputtering Experiment

[0081] In the sputtering experiment, the two simulated electrodes (simulated screen 2 and simulated acceleration grating 3) were first cleaned to remove surface contaminants. The entire simulation evaluation device was then fixed within a vacuum chamber filled with an appropriate amount of inert gas (such as argon or xenon). An ion source was activated to generate a high-energy ion beam, which sputtered the electrodes at a set energy (e.g., 600 eV or 1200 eV) and beam current density (e.g., 100 µA). The ion beam uniformly bombarded the electrode surface, simulating material erosion under real-world conditions. This process may induce surface atomic sputtering, micro-protrusion formation, roughness changes, and particle accumulation. After sputtering, the sputtering conditions (ion type, energy, etc.) were marked to provide a basis for subsequent insulation performance evaluation and material characterization experiments.

[0082] Step 3, Insulation Performance Assessment

[0083] (1) Testing of field-induced enhancement factor

[0084] The clamping end of the measuring device is bolted to the simulated screen 2 and the simulated acceleration grid 3. A high-precision voltage source and current measuring equipment are used to gradually apply a DC voltage while simultaneously acquiring the current. The field-induced enhancement factor formula is then used. In the formula For field-induced current (A), To enhance the electric field strength (V / m), Launch area (m²) 2 ), Let eV be the work function. It can be calculated. , combined In the formula The voltage across the gap, Given the electrode spacing, the field-induced enhancement factor can be calculated. By comparing the field-induced enhancement factor of the electrode surface before and after sputtering, the influence of local field strength changes caused by surface micro-protrusions, burrs, and other defects on the electric field distribution and breakdown behavior is analyzed.

[0085] (2) Testing of initial breakdown voltage after sputtering

[0086] For different types of ions (such as Ar) + Xe + Electrode simulation structures treated with energy sputtering (e.g., graphite, molybdenum, stainless steel) were used. The DC voltage was gradually increased until the electrodes broke down, and the breakdown voltage values ​​were recorded. The initial breakdown voltage was used as a benchmark indicator of the electrode insulation performance to measure the direct impact of sputtering on insulation strength. The differences in initial breakdown voltage after sputtering for different materials (e.g., graphite, molybdenum, stainless steel) were analyzed to clarify the correlation between material properties and the sputtering effect.

[0087] (3) Test of breakdown voltage change with discharge number

[0088] After the initial breakdown, multiple discharge tests were applied to the electrode, and the trend of breakdown voltage after each discharge was recorded. The analysis focused on whether the breakdown voltage gradually increased with the number of discharges and whether it tended to stabilize, observing the recovery capability of the electrode's insulation performance. A correlation analysis was performed between the breakdown voltage trend and sputter-induced surface defect changes (such as cracks and increased roughness) to explore the relationship between the material's repair capability and surface damage characteristics.

[0089] Step 4, Material Property Evaluation

[0090] (1) Scanning electron microscope

[0091] High-resolution observation of the electrode surface was performed using scanning electron microscopy, focusing on recording the following characteristics: the distribution density and shape of surface particles after sputtering; changes in surface morphology under different ion types and energies, such as material spalling and pore formation; and the surface damage characteristics of different materials and their differences in sputtering sensitivity. By comparing images before and after sputtering, the sputtering-induced surface particle accumulation and material erosion degree were quantitatively assessed.

[0092] (2) Laser scanning confocal microscope

[0093] Three-dimensional morphological scanning of the electrode surface was performed using laser scanning confocal microscopy to acquire surface roughness data. The influence of sputtering on surface roughness was analyzed, focusing on the formation of structural defects such as micro-protrusions, burrs, and cracks. The spatial distribution characteristics of sputtering damage on the electrode surface were displayed through three-dimensional images, clarifying the evolution law of surface morphology under different sputtering conditions. The surface roughness changes of different materials were compared to explore the influence of materials on sputtering.

[0094] In some embodiments of the present invention, after step 2, a high-resolution observation of the electrode surface is performed using a scanning electron microscope to record the distribution density and shape of surface particles before the field enhancement factor test and before the breakdown test after sputtering; a three-dimensional morphology scan of the grid electrode surface is performed using a laser scanning confocal microscope to obtain surface roughness data.

[0095] This step allows for comparison of changes in electrode surface morphology before and after field enhancement factor testing, as well as before and after breakdown testing.

[0096] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, features defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. In the description of this invention, "above" or "below" a second feature may include direct contact between the first and second features, or it may include contact between the first and second features not being in direct contact but through another feature between them.

[0097] In the description of this invention, the terms "above," "over," and "on top" for the first feature and the second feature include the first feature being directly above or diagonally above the second feature, or simply indicating that the first feature is at a higher horizontal level than the second feature.

[0098] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0099] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0100] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

[0101] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A simulation and evaluation device for the insulation performance and material properties of ion sputtering grid electrodes, characterized in that, include: Install base plate (5); There are two insulating brackets (1), which are fixedly mounted on the mounting base plate (5) opposite to each other; The simulated screen (2) is fixedly mounted on an insulating bracket (1); The simulated acceleration grid (3) is fixedly mounted on an insulating bracket (1); The simulated screen (2) and the simulated acceleration screen (3) are arranged on the same axis; The simulated screen (2) has a plurality of first holes (25), and the simulated acceleration grid (3) has a plurality of second holes (35). The diameter of the first hole (25) is larger than the diameter of the second hole (35), and each first hole (25) corresponds to a second hole (35) on the same axis. The simulation evaluation method implemented by this device includes the following steps: Step 1: Fix the simulated screen (2) and the simulated acceleration grid (3) on two insulating supports (1) respectively to obtain the simulated evaluation device. Place the simulated evaluation device in the sputtering chamber, with the simulated screen (2) facing the ion source direction. Step 2: Start the ion source, adjust the ion type and ion energy, set the beam density and sputtering time, generate a high-energy ion beam, bombard the simulated screen (2), and part of the high-energy ion beam passes through the first hole (25) and bombards the surface of the simulated acceleration grid (3) to complete the ion dose accumulation to simulate the sputtering effect under actual working conditions. Step 3: Measure the field emission current of the simulated screen grid (2) and the simulated acceleration grid (3) through field emission testing, and calculate the field emission enhancement factor; Step 4: Apply DC voltage to the simulated screen grid (2) and simulated acceleration grid (3) after field emission test, gradually increase the voltage to measure the initial breakdown voltage, and evaluate the trend of breakdown voltage with the number of discharges by repeated boost discharge to determine whether the insulation performance can be restored to the initial level. Step 5: Use a scanning electron microscope to observe the surface morphology and particle distribution of the simulated screen (2) and the simulated acceleration screen (3), record the particle accumulation and morphological change characteristics of different materials on the surface after sputtering, and analyze the effect of sputtering on material properties; Step 6: Use a laser scanning confocal microscope to perform three-dimensional morphological scanning on the surfaces of the simulated screen (2) and the simulated acceleration grid (3), and measure the surface roughness and micro-defect characteristics after field emission testing and breakdown.

2. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that, A level plate (4) is provided between the two insulating supports (1).

3. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 2, characterized in that, Two level plates (4) are provided between the two insulating supports (1), respectively between the upper and lower ends of the two insulating supports (1).

4. The simulation and evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that, The simulated screen (2) includes a first connecting outer ring (21), a first connecting arc surface (22), and a screen area (23) arranged from the outside to the inside; the screen area (23) and the first connecting outer ring (21) are respectively on two mutually parallel planes, and the radial section of the first connecting arc surface (22) is perpendicular to the plane of the first connecting outer ring (21).

5. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 4, characterized in that, The simulated acceleration grid (3) includes a second connecting outer ring (31), a second connecting arc surface (32), and an acceleration grid region (33) arranged from the outside to the inside; the acceleration grid region (33) and the second connecting outer ring (31) are respectively on two mutually parallel planes, and the radial section of the second connecting arc surface (32) is perpendicular to the plane of the second connecting outer ring (31).

6. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 5, characterized in that, The distance between the screen area (23) and the acceleration area (33) is less than the distance between the first connecting outer ring (21) and the second connecting outer ring (31).

7. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 5, characterized in that, The insulating bracket (1) has a fixing groove (11) and a coaxial through hole (12) is provided in the center of the fixing groove (11). The first connecting outer ring (21) and the fixing groove (11) are fixedly connected; The second connecting outer ring (31) and the fixing groove (11) are fixedly connected.

8. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 7, characterized in that, The fixing groove (11) is provided with a number of third bolt holes (13) evenly distributed around the periphery of the through hole (12). The first connecting outer ring (21) is provided with a plurality of first bolt holes (24) evenly distributed along the circumference, and the second connecting outer ring (31) is provided with a plurality of second bolt holes (34) evenly distributed along the circumference. The first bolt hole (24), the second bolt hole (34), and the third bolt hole (13) correspond one-to-one.

9. The simulation evaluation device for the insulation performance and material properties of an ion sputtering grid electrode according to claim 1, characterized in that, Before step 3, the following steps are included: The surfaces of the simulated screen (2) and simulated acceleration grating (3) were observed at high resolution using a scanning electron microscope. The surfaces of the simulated screen (2) and simulated acceleration grating (3) after sputtering were recorded. The three-dimensional morphology of the surfaces of the simulated screen (2) and simulated acceleration grating (3) was scanned using a laser scanning confocal microscope to obtain surface roughness data.

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