Silicon carbide power module test method and device, electronic equipment and storage medium

Abstract

The embodiment of the invention provides a silicon carbide power module testing method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductor testing. The method comprises the following steps: carrying out characteristic parameter detection on a to-be-tested product to obtain a first characteristic parameter, carrying out a simulated working condition test on the to-be-tested product according to a prediction strategy, carrying out characteristic parameter detection on the to-be-tested product subjected to the simulated working condition test to obtain a second characteristic parameter, and comparing the first characteristic parameter with the second characteristic parameter, and determining whether the to-be-tested product is normal or not. By carrying out simulated working condition testing on the to-be-tested product and comparing the characteristic parameters of the to-be-tested product before and after testing, the initial defect of the silicon carbide power module product is quickly screened, and the service stability and reliability of the silicon carbide power module product are effectively improved; and the risk of failure caused by initial defects in the product service process is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor testing technology, and in particular to a method, device, electronic equipment and storage medium for testing a silicon carbide power module. Background Art

[0002] With the continuous development of semiconductor technology, silicon carbide, as a wide bandgap semiconductor material, has gradually become one of the important materials for power electronic devices due to its excellent properties such as high thermal conductivity, high breakdown electric field strength and high saturated electron drift velocity. The application scope of silicon carbide materials covers high-voltage power devices, radio frequency devices and optoelectronic devices.

[0003] During the material growth and wafer manufacturing process, due to the material properties of silicon carbide itself, the lattice structure is difficult to control and is prone to initial defects, resulting in defects in the gate oxide reliability and insulation withstand voltage characteristics of silicon carbide products. Conventional testing cannot expose defective products, causing some products to fail after a period of use, affecting the reliability and life of the product's service life. Summary of the invention

[0004] In view of this, an object of the embodiments of the present invention is to provide a method, device, electronic device and storage medium for testing a silicon carbide power module to at least partially improve the above-mentioned problems.

[0005] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows: In a first aspect, an embodiment of the present invention provides a method for testing a silicon carbide power module, the method comprising: Perform characteristic parameter detection on the product to be tested to obtain a first characteristic parameter; Performing a simulated working condition test on the product to be tested according to the prediction strategy; Performing characteristic parameter detection on the product to be tested after the simulated working condition test to obtain a second characteristic parameter; The first characteristic parameter and the second characteristic parameter are compared to determine whether the product to be tested is normal.

[0006] Optionally, performing a simulated working condition test on the product to be tested according to the prediction strategy includes: Performing a high-temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested; Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects of the product to be tested; A high temperature withstand voltage blocking characteristic test is performed on the product to be tested to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

[0007] Optionally, the high temperature gate oxide withstand voltage characteristic test of the product to be tested includes: Maintaining the junction temperature of the product to be tested at a first preset temperature; Applying a first preset voltage between the gate and the source of the product to be tested for a first preset time period; A second preset voltage is applied between the gate and the source of the product to be tested for a second preset time period.

[0008] Optionally, the step of performing a variable temperature gate oxide switch stress characteristic test on the product to be tested includes: Maintaining the junction temperature of the product to be tested within a preset temperature range; Alternately applying a third preset voltage and a fourth preset voltage to the product to be tested according to a voltage switching frequency; Increasing the voltage switching frequency according to a preset frequency increasing rate until the voltage switching frequency reaches a first frequency; Decelerating and reducing the voltage switching frequency according to a preset frequency until the voltage switching frequency reaches a second frequency; The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

[0009] Optionally, the high temperature withstand voltage blocking characteristic test of the product to be tested includes: Maintaining the junction temperature of the product to be tested at a second preset temperature; A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

[0010] Optionally, the sixth preset voltage is a rated value of a drain-source blocking voltage of the product to be tested.

[0011] Optionally, the first characteristic parameter and the second characteristic parameter both include a threshold voltage, a drain-source leakage current, and a gate-source leakage current, and comparing the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal includes: According to the first characteristic parameter and the second characteristic parameter, respectively calculating a threshold voltage drift, a drain-source leakage current drift, and a gate-source leakage current drift; If the threshold voltage drift is less than or equal to a first preset value, the drain-source leakage current drift is less than or equal to a second preset value, and the gate-source leakage current drift is less than or equal to a third preset value, it is determined that the product to be tested is normal; If the threshold voltage drift is greater than a first preset value, and / or the drain-source leakage current drift is greater than a second preset value, and / or the gate-source leakage current drift is greater than a third preset value, it is determined that the product to be tested is defective.

[0012] In a second aspect, an embodiment of the present invention provides a silicon carbide power module testing device, comprising: The characteristic parameter initial inspection unit is used to perform characteristic parameter inspection on the product to be tested and obtain the first characteristic parameter; A simulated working condition test unit, used for performing a simulated working condition test on the product to be tested according to a prediction strategy; The characteristic parameter final inspection unit is used to perform characteristic parameter inspection on the product to be tested after the simulated working condition test to obtain the second characteristic parameter; The product defect determination unit is used to compare the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal.

[0013] In a third aspect, an embodiment of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor implements any of the above-described methods when executing the program.

[0014] In a fourth aspect, an embodiment of the present invention provides a storage medium having a computer program stored thereon, wherein the computer program implements any of the above-described methods when executed by a processor.

[0015] The embodiments of the present invention provide a method, device, electronic device and storage medium for testing a silicon carbide power module. The method performs a simulated operating condition test on the product to be tested and compares the characteristic parameters of the product before and after the test, thereby realizing rapid screening of initial defects of the silicon carbide power module product.

[0016] Furthermore, the embodiments of the present invention can expose the defects of the product to be tested as much as possible through sequential characteristic tests to induce gate oxide defects, accelerate the exposure of gate oxide defects, and stimulate the exposure of abnormal insulation withstand voltage characteristics, thereby effectively improving the service stability and reliability of the silicon carbide power module products that have passed the test and reducing the risk of failure due to initial defects during the product service process.

[0017] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 A schematic structural block diagram of an electronic device provided by an embodiment of the present invention; Figure 2 A schematic diagram of a process flow of a silicon carbide power module testing method provided by an embodiment of the present invention; Figure 3 Another schematic diagram of a process flow of a silicon carbide power module testing method provided by an embodiment of the present invention; Figure 4 A relationship diagram between voltage switching frequency and junction temperature for a high temperature withstand voltage blocking characteristic test provided by an embodiment of the present invention; Figure 5 A schematic structural block diagram of a silicon carbide power module testing device provided in an embodiment of the present invention.

[0020] Icons: 100-electronic device; 101-memory; 102-communication interface; 103-processor; 104-communication bus; 300-silicon carbide power module testing device; 310-characteristic parameter initial inspection unit; 320-simulated working condition testing unit; 330-characteristic parameter final inspection unit; 340-product defect determination unit. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0022] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0024] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0025] As the core component of power energy conversion, power semiconductor devices have been widely used in many key fields such as power systems, high-speed railways, aerospace, and industrial automation. With its efficient energy conversion capabilities and precise power control characteristics, these devices have become an indispensable part of modern power electronics technology. Power semiconductor devices can quickly respond to changes in energy demand, efficiently convert energy into the form of electricity required by users, and have excellent switching performance and frequency response capabilities, ensuring high precision and high efficiency in the energy conversion process.

[0026] Silicon carbide devices have shown excellent performance advantages in the field of power conversion due to their high electrical conductivity, high thermal conductivity, wide bandgap, etc. These characteristics enable silicon carbide devices to maintain stable working conditions under high temperature, high frequency and high voltage environments. Therefore, they are widely used in new energy vehicles, industrial and commercial energy storage systems, and efficient DC / DC converters, gradually replacing traditional silicon-based power devices and becoming the new favorite of the industry development.

[0027] However, in the actual application of silicon carbide materials, especially in the material growth and wafer manufacturing process, due to the complex crystal structure of silicon carbide, it is easy to introduce initial defects in the lattice. These defects will directly affect the gate oxide reliability and insulation withstand voltage characteristics of the final product, and then affect the overall performance of the silicon carbide power module. Conventional quality inspection methods often find it difficult to identify these potential problems, resulting in some defective products entering the market. These problems will gradually emerge after a period of actual use, which brings hidden dangers to the long-term stable operation of the user's corresponding equipment, and seriously affects the reliability and service life of silicon carbide power module products in industrial applications.

[0028] Based on the above situation, an embodiment of the present invention provides a silicon carbide power module testing method, device, electronic device and storage medium. By performing a simulated operating condition test on the silicon carbide power module and then comparing the characteristic parameters of the silicon carbide power module before and after the test, rapid screening of initial defects of the silicon carbide power module product can be achieved, effectively improving the service stability and reliability of the silicon carbide power module product, and reducing the risk of failure due to initial defects during the product service process.

[0029] To implement the process steps and functions of each example of the present invention, please refer to Figure 1 , Figure 1 A schematic structural block diagram of an electronic device 100 provided in an embodiment of the present invention, the electronic device 100 may be a dynamic characteristics test system. The electronic device 100 includes a memory 101 and a processor 103, the memory 101 and the processor 103 are electrically connected to each other directly or indirectly to achieve data transmission or interaction. For example, these components may be electrically connected to each other via one or more communication buses 104 or signal lines. The memory 101 may be used to store software programs and modules, and the processor 103 executes the software programs and modules stored in the memory 101, thereby performing various functional applications and data processing.

[0030] The electronic device 100 may be, but is not limited to, a personal computer (PC), a server, a distributed computer, etc. It is understandable that the electronic device 100 is not limited to a physical server, but may also be a virtual machine on a physical server, a virtual machine built on a cloud platform, etc., which can provide the same functions as the server or virtual machine. The operating system of the electronic device 100 may be, but is not limited to, a Windows system, a Linux system, etc.

[0031] Among them, the memory 101 can be, but is not limited to, a random access memory (RAM), a read only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable read-only memory (EEPROM), etc.

[0032] The communication connection between the electronic device 100 and an external device is achieved through at least one communication interface 102 (which can be wired or wireless).

[0033] The processor 103 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the embodiment of the present invention can be completed by the hardware integrated logic circuit in the processor 103 or the instructions in the form of software. The processor 103 can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0034] Understandably, Figure 1 The structure shown is for illustration only. The electronic device 100 may also include Figure 1 More or fewer components as shown, or with Figure 1 Different configurations are shown. Figure 1 Each component shown in the figure can be implemented by hardware, software or a combination thereof.

[0035] The following is an exemplary description of the silicon carbide power module testing method provided by the embodiment of the present invention. Figure 2 , the execution subject of this method can be the above Figure 1 The electronic device 100 shown in FIG. 1 includes: Figure 2 The following steps are described: S210: Perform characteristic parameter detection on the product to be tested to obtain a first characteristic parameter.

[0036] S220: Performing a simulated working condition test on the product to be tested according to the prediction strategy.

[0037] S230: Perform characteristic parameter detection on the product to be tested that has undergone the simulated working condition test to obtain a second characteristic parameter.

[0038] S240: Compare the first characteristic parameter and the second characteristic parameter to determine whether the product to be tested is normal.

[0039] The product to be tested is a silicon carbide power module product. The silicon carbide power module is a power module made of silicon carbide semiconductor material and has the characteristics of high efficiency, high frequency, high temperature and high voltage. Before the product to be tested is subjected to relevant tests, the key characteristic parameters are initially inspected to obtain the first characteristic parameter, which is used as a reference value. In order to measure the initial defects of the product to be tested, the product to be tested is subjected to a simulated working condition test. Through the simulated working condition test, the operating conditions of the product in actual work can be simulated, so as to expose as much as possible the defects that may occur in the product at work. After the product to be tested is subjected to a simulated working condition test, the characteristic parameters of the product to be tested are detected again to obtain the second characteristic parameters. After obtaining the first characteristic parameters and the second characteristic parameters of the product to be tested before and after the test, by comparing the two characteristic parameters, it can be determined whether the product to be tested is normal or has defects.

[0040] This method conducts simulated operating condition tests on the product to be tested and compares the characteristic parameters of the product before and after the test, thereby achieving rapid screening of initial defects in silicon carbide power module products, effectively improving the service stability and reliability of silicon carbide power module products, and reducing the risk of failure due to initial defects during the product service process.

[0041] The first characteristic parameter and the second characteristic parameter can be flexibly selected. For example, both include threshold voltage, drain-source leakage current and gate-source leakage current. Threshold voltage and gate-source leakage current can be used as parameters for subsequent evaluation of gate oxide characteristics of silicon carbide power modules, and drain-source leakage current can be used as parameters for subsequent evaluation of insulation withstand voltage characteristics of silicon carbide power modules. Based on this, the above step S240 can include the following steps: According to the first characteristic parameter and the second characteristic parameter, the threshold voltage drift, the drain-source leakage current drift and the gate-source leakage current drift are calculated respectively.

[0042] The formulas for calculating the threshold voltage drift, drain-source leakage current drift, and gate-source leakage current drift are as follows:

[0043] in, Indicates the threshold voltage drift, Drain-source leakage current drift, Gate-source leakage current drift, represents the threshold voltage of the first characteristic parameter, The drain-source leakage current representing the first characteristic parameter, The gate-source leakage current representing the first characteristic parameter, The threshold voltage representing the second characteristic parameter, The drain-source leakage current represents the second characteristic parameter, The gate-source leakage current represents the second characteristic parameter.

[0044] If the threshold voltage drift is less than or equal to the first preset value, the drain-source leakage current drift is less than or equal to the second preset value, and the gate-source leakage current drift is less than or equal to the third preset value, it is determined that the product to be tested is normal.

[0045] If the threshold voltage drift is greater than the first preset value, and / or the drain-source leakage current drift is greater than the second preset value, and / or the gate-source leakage current drift is greater than the third preset value, it is determined that the product to be tested is defective.

[0046] After comparing the first characteristic parameter and the second characteristic parameter, if the threshold voltage drift is less than or equal to the first preset value, the drain-source leakage current drift is less than or equal to the second preset value, and the gate-source leakage current drift is less than or equal to the third preset value, it is determined that the product to be tested is normal, indicating that it does not have an initial defect. For example, when ≤0.1 and ≤10 and When ≤5, it indicates that the gate oxide characteristic drift and insulation withstand voltage blocking characteristic changes of the silicon carbide power module are within the normal range, and the silicon carbide power module passes the test. If at least one of the threshold voltage drift, drain-source leakage current drift, and gate-source leakage current drift does not meet the conditions, it indicates that the test has exposed the initial gate oxide defects and withstand voltage abnormalities of the silicon carbide power module, and the test fails.

[0047] There are many ways to perform simulated working condition tests on the product to be tested. In order to expose the defects of the product to be tested as much as possible, some characteristic tests can be performed on the product to be tested in a certain order. For example, the product to be tested can be tested in sequence with high temperature gate oxide withstand voltage characteristic test, variable temperature gate oxide switch stress characteristic test and high temperature withstand voltage blocking characteristic test. Based on this, see Figure 3 The steps of conducting a simulated working condition test on the product to be tested according to the prediction strategy may include the following steps: S221: Performing a high temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested.

[0048] S222: Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects of the product to be tested.

[0049] S223: Performing a high temperature withstand voltage blocking characteristic test on the product to be tested, so as to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

[0050] First, a high-temperature gate oxide withstand voltage characteristic test is performed on the product to be tested to assess the gate oxide reliability of the product at high temperature and induce gate oxide defects. Then, a variable-temperature gate oxide switch stress characteristic test is performed on the product to be tested to simulate the high switching operating frequency conditions under the junction temperature fluctuation conditions during the service of the device, and the gate oxide reliability under variable temperature and variable frequency conditions is tested to accelerate the exposure of gate oxide defects in the product to be tested. Finally, a high-temperature withstand voltage blocking characteristic test is performed on the product to be tested to simulate the high-temperature withstand voltage conditions during the operation of the device, and to evaluate the influence of high temperature and high pressure on the insulation withstand voltage characteristics of the device, so as to stimulate the exposure of abnormal insulation withstand voltage characteristics of the product to be tested. From high-temperature static withstand voltage to variable-temperature dynamic switch stress, and then to withstand voltage test under extreme conditions, a test from shallow to deep, from static to dynamic is formed, which can expose the initial defects of the product to be tested as much as possible.

[0051] In S221, there may be multiple ways to implement the high temperature gate oxide withstand voltage characteristic test. In one possible implementation, performing the high temperature gate oxide withstand voltage characteristic test may include the following steps: The junction temperature of the product to be tested is maintained at a first preset temperature.

[0052] A first preset voltage is applied between the gate and source of the product to be tested for a first preset time period.

[0053] A second preset voltage is applied between the gate and the source of the product to be tested for a second preset time period.

[0054] Exemplarily, the junction temperature of the product to be tested can be maintained constant at a first preset temperature, such as 150°C, by a heating device. At the same time, a first preset voltage is loaded between the gate and source of the product to be tested for a first preset time, wherein the first preset voltage is +18V~+20V, and the first preset time is 12h~24h. Then, the temperature range is maintained unchanged, and a second preset voltage is loaded between the gate and source of the product to be tested for a second preset time, wherein the second preset voltage is -10V~-8V, and the second preset time is 12h~24h. This simulates the service condition of high-temperature gate bias of the product and utilizes high temperature to induce exposure of module gate oxygen defects.

[0055] In S222, there are multiple ways to implement the variable temperature gate oxide switch stress characteristic test. In one possible implementation, it can be implemented by regularly increasing and decreasing the frequency of switching on and off. The variable temperature gate oxide switch stress characteristic test may include the following steps: Maintain the junction temperature of the product under test within a preset temperature range.

[0056] The third preset voltage and the fourth preset voltage are alternately applied to the product to be tested according to the voltage switching frequency.

[0057] The voltage switching frequency is increased according to a preset frequency increasing rate until the voltage switching frequency reaches the first frequency.

[0058] The voltage switching frequency is reduced by decelerating according to the preset frequency until the voltage switching frequency reaches the second frequency.

[0059] The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

[0060] Exemplarily, after the product to be tested has undergone a high-temperature gate oxide withstand voltage characteristic test, a heating device is used to maintain the junction temperature of the product to fluctuate within a certain range, the temperature fluctuation range is 60°C~130°C, and the temperature increase / deceleration rate is 1°C / s, simulating the junction temperature fluctuation of the product under service conditions. At the same time, a third preset voltage and a fourth preset voltage are loaded between the gate and source of the product at a certain changing frequency, the initial voltage switching frequency is 50k / s, the third preset voltage and the fourth preset voltage are +20V / -10V, the voltage switching frequency is increased according to the preset frequency increase rate, the preset frequency increase rate is 5k~10k / s, until the voltage switching frequency reaches the first frequency of 150k / s, and then the voltage switching frequency is reduced according to the preset frequency deceleration, the preset frequency deceleration rate is also 5k~10k / s, until the voltage switching frequency reaches the second frequency of 50k / s, according to this rule, the frequency is repeatedly increased and decreased, and the third preset time length is 12h~24h. The operating conditions of increasing the frequency and temperature of the product during service, and reducing the frequency over-temperature are simulated to examine the impact of variable temperature and frequency on the gate oxide characteristics, and further use variable temperature and high-frequency stress to stimulate the exposure of gate oxide defects.

[0061] A positive and negative voltage of +20V / -10V is applied between the gate and source of the product. The voltage switching frequency is 50k / s. The frequency is then increased to 150k / s at a rate of 5k~10k / s. The frequency is then reduced from 150k / s to 50k / s at a rate of 5k~10k / s. The frequency is continuously increased and decreased for 12h~24h to complete the variable temperature gate oxide switch stress characteristic test.

[0062] See also Figure 4In the high-temperature gate oxide withstand voltage characteristic test, the relationship between the gate-source switching frequency f and the junction temperature T is shown. The gate-source switching frequency increases with the increase of the junction temperature and decreases with the decrease of the junction temperature. Among them, f1 and f2 are 50k / s and 150k / s, and T1 and T2 are 60℃ and 130℃.

[0063] In S223, performing a high temperature withstand voltage blocking characteristic test may include the following steps: The junction temperature of the product to be tested is maintained at a second preset temperature.

[0064] A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

[0065] Exemplarily, after the product has been assessed for its variable temperature and frequency conversion characteristics, the device maintains the product junction temperature constant at a second preset temperature, which may also be 150°C. A fifth preset voltage is loaded between the gate and source of the product, which is -10V. At the same time, a sixth preset voltage is loaded between the drain and source of the module. The fourth preset test time may be 12h~24h, which completely exposes the initial gate oxide defects of the product.

[0066] The sixth preset voltage may be a rated value of the drain-source blocking voltage of the product to be tested. For example, the drain-source blocking voltage of the silicon carbide power module in the photovoltaic inverter is 650V, and the drain-source blocking voltage of the silicon carbide power module in the charging pile is 1200V.

[0067] Furthermore, the present invention also provides a silicon carbide power module testing device, see Figure 5 , the silicon carbide power module testing device 300 comprises: The characteristic parameter initial detection unit 310 is used to detect the characteristic parameters of the product to be tested and obtain the first characteristic parameters.

[0068] The simulated operating condition test unit 320 is used to perform a simulated operating condition test on the product to be tested according to the prediction strategy.

[0069] The characteristic parameter final inspection unit 330 is used to perform characteristic parameter inspection on the product to be tested after the simulated working condition test to obtain a second characteristic parameter.

[0070] The product defect determination unit 340 is used to compare the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal.

[0071] In summary, the embodiments of the present invention provide a method, device, electronic device and storage medium for testing a silicon carbide power module. By performing a simulated operating condition test on the product to be tested and comparing the characteristic parameters of the product to be tested before and after the test, rapid screening of initial defects of the silicon carbide power module product is achieved. Through sequential characteristic tests, gate oxide defects are induced, gate oxide defect exposure is accelerated, and abnormal insulation withstand voltage characteristic exposure is stimulated in turn. The defects of the product to be tested can be exposed as much as possible, and the service stability and reliability of the silicon carbide power module products that have passed the test can be effectively improved, and the risk of failure of the product due to initial defects during the service process can be reduced.

[0072] In the embodiments provided by the present invention, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of the present invention. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of the code, and a module, a program segment or a part of the code contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0073] In addition, the functional modules in the various embodiments of the present invention may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0074] If the function is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a computer-readable storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0075] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

[0076] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A method for testing a silicon carbide power module, characterized in that: The method comprises: Perform characteristic parameter detection on the product to be tested to obtain a first characteristic parameter; Performing a simulated working condition test on the product to be tested according to the prediction strategy; Performing characteristic parameter detection on the product to be tested after the simulated working condition test to obtain a second characteristic parameter; The first characteristic parameter and the second characteristic parameter are compared to determine whether the product to be tested is normal.

2. The method according to claim 1, characterized in that The performing of a simulated working condition test on the product to be tested according to the prediction strategy includes: Performing a high temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested; Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects of the product to be tested; A high temperature withstand voltage blocking characteristic test is performed on the product to be tested to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

3. The method according to claim 2, characterized in that The high temperature gate oxide withstand voltage characteristic test of the product to be tested comprises: Maintaining the junction temperature of the product to be tested at a first preset temperature; Applying a first preset voltage between the gate and the source of the product to be tested for a first preset time period; A second preset voltage is applied between the gate and the source of the product to be tested for a second preset time period.

4. The method according to claim 2, characterized in that: The step of performing a variable temperature gate oxide switch stress characteristic test on the product to be tested includes: Maintaining the junction temperature of the product to be tested within a preset temperature range; Alternately applying a third preset voltage and a fourth preset voltage to the product to be tested according to a voltage switching frequency; Increasing the voltage switching frequency according to a preset frequency increasing rate until the voltage switching frequency reaches a first frequency; Decelerating and reducing the voltage switching frequency according to a preset frequency until the voltage switching frequency reaches a second frequency; The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

5. The method according to claim 2, characterized in that: The high temperature withstand voltage blocking characteristic test of the product to be tested includes: Maintaining the junction temperature of the product to be tested at a second preset temperature; A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

6. The method according to claim 5, characterized in that The sixth preset voltage is a rated value of the drain-source blocking voltage of the product to be tested.

7. The method according to claim 1, characterized in that The first characteristic parameter and the second characteristic parameter both include a threshold voltage, a drain-source leakage current, and a gate-source leakage current. The first characteristic parameter and the second characteristic parameter are compared to determine whether the product to be tested is normal, including: According to the first characteristic parameter and the second characteristic parameter, respectively calculating a threshold voltage drift, a drain-source leakage current drift, and a gate-source leakage current drift; If the threshold voltage drift is less than or equal to a first preset value, the drain-source leakage current drift is less than or equal to a second preset value, and the gate-source leakage current drift is less than or equal to a third preset value, it is determined that the product to be tested is normal; If the threshold voltage drift is greater than a first preset value, and / or the drain-source leakage current drift is greater than a second preset value, and / or the gate-source leakage current drift is greater than a third preset value, it is determined that the product to be tested is defective.

8. A silicon carbide power module testing device, characterized in that: include: The characteristic parameter initial inspection unit is used to perform characteristic parameter inspection on the product to be tested and obtain the first characteristic parameter; A simulated working condition test unit, used for performing a simulated working condition test on the product to be tested according to a prediction strategy; The characteristic parameter final inspection unit is used to detect the characteristic parameters of the product to be tested after the simulated working condition test to obtain the second characteristic parameter; The product defect determination unit is used to compare the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that: When the processor executes the program, the method according to any one of claims 1 to 7 is implemented.

10. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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