Wafer annealing equipment and method
By designing intelligent chassis and intelligent cooling bases in wafer annealing equipment, and using structures such as turbine rings and micro telescopic cylinders, the problems of stress unevenness and impurity diffusion caused by temperature changes during wafer annealing are solved, efficient cleaning and uniform cooling are achieved, and annealing quality and efficiency are improved.
Patent Information
- Application Number
- CN202510035603.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2025-04-29
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
The existing wafer annealing equipment has rapid temperature rise or fall during use, resulting in uneven stress distribution of the wafer and burn defects; at the same time, the diffusion of bubbles or impurities in the wafer leads to burn and anti-imperme diffusion defects, affecting the performance of the crystal device.
A wafer annealing device is designed, including an intelligent chassis and an intelligent cooling base. It adopts structures such as turbine rings and micro telescopic cylinders. The movement of the scroll rods and turbine rings is controlled through an external controller, which drives the adsorption cleaning plate to rotate and clean impurities on the wafer surface, and slow cooling is achieved through the intelligent cooling base to evenly distribute internal stress.
Effectively clean the diffused impurities on the wafer surface to prevent contamination; slow cooling ensures uniform distribution of stresses inside the wafer, improves the annealing efficiency and quality, and reduces the occurrence of burn defects.
Smart Images
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Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of wafer annealing, in particular to a wafer annealing device and method. Background Art
[0002] HYPERLINK "https: / / www.baidu.com / s?rsv_dl=re_dqa_generate&sa=re_dqa_generate&wd=%E6%99%B6%E5%9C%86%E9%80%80%E7%81%AB&rsv_pq=f8954fe40144db76&oq=%E6%99%B6 %E5%9C%86%E9%80%80%E7%81%AB%E5%AE%9A%E4%B9%89&rsv_t=69045bbmpGI07itWYRic Mo7VicDND1eYf0naNldcqBLm7ojFJNphiRism2xAZGmtI78&tn=98010089_dg&ie=utf-8" \t "https: / / www.baidu.com / _blank" Wafer annealing is a heat treatment process that heats the wafer to a certain temperature and maintains it for a period of time, and then cools it in a controlled manner to optimize the microstructure and physical properties of the material. The annealing process occupies an important position in semiconductor manufacturing and has a decisive influence on the overall performance and reliability of the chip. The core of the wafer annealing process lies in the precise control of the temperature, which must be high enough to allow atoms to rearrange, while avoiding irreversible damage caused by excessively high temperatures.
[0003] At present, the existing wafer annealing equipment has the following deficiencies in use: first, during the wafer annealing process, the rapid rise or fall of temperature in the equipment will cause uneven internal stress distribution of the wafer, resulting in burn defects on the wafer surface. In addition, if there are defects such as bubbles inside the wafer, it is also easy to cause wafer burns. Therefore, when selecting wafer materials, materials that meet the standards must be selected. During the wafer annealing process, some impurity elements will diffuse to the wafer surface due to the increase in temperature, which will cause anti-impurity diffusion defects on the wafer surface. This contamination will cause the content of impurities such as metal on the wafer surface to increase, thereby affecting the performance of crystal devices.
[0004] Therefore, those skilled in the art provide a wafer annealing device to solve the problems raised in the above background technology. Summary of the invention
[0005] In view of the deficiencies of the prior art, the present invention provides a wafer annealing device and method, which solve the following problems: in the use of the existing wafer annealing device, firstly, during the wafer annealing process, the rapid rise or fall of the temperature in the device will lead to uneven stress distribution inside the wafer, thereby causing cracking defects on the wafer surface. In addition, if there are defects such as bubbles inside the wafer, it is also easy to cause the wafer to crack. Therefore, when selecting wafer materials, materials that meet the standards should be selected. In addition, during the wafer annealing process, some impurity elements will diffuse to the wafer surface due to the increase in temperature, which will cause the defect of reverse impurity diffusion on the wafer surface. This pollution will increase the content of impurities such as metal on the wafer surface, thereby affecting the performance of crystal devices. The present invention is achieved through the following technical solutions.
[0006] A wafer annealing device of the present invention comprises an intelligent wafer annealing chassis, wherein an intelligent cooling base is fixedly installed at the bottom end of the intelligent wafer annealing chassis, a ventilation maintenance grid plate is arranged on one side of the intelligent cooling base, a side-mounted material taking chamber is fixedly installed on one side of the intelligent wafer annealing chassis, a thickened sealed door is rotatably installed on one side of the side-mounted material taking chamber, a handle is arranged on one side of the thickened sealed door, a temperature controller is arranged on one side of the side-mounted material taking chamber, a sensor display switch is arranged on one side of the intelligent wafer annealing chassis, a material presentation bottom plate is movably arranged on the inner side of the intelligent wafer annealing chassis, a limiting frame is fixedly connected to the upper end of the material presentation bottom plate, an external heat conducting ring is fixedly connected to the upper surface of the material presentation bottom plate, a supporting tray is arranged on the inner side of the supporting tray, and a wafer disk is arranged on one end of the limiting frame. An upper clamping ring is fixedly connected, and the upper clamping ring is located on the inner side of the external heat-conducting ring. A lower limit ring is fixedly connected to the inner side of the external heat-conducting ring. The upper clamping ring corresponds to the lower limit ring. A turbine ring is slidably installed between the upper clamping ring and the lower limit ring. Two miniature telescopic cylinders are fixedly connected to the inner surface of the turbine ring. The protruding ends of the two miniature telescopic cylinders are fixedly connected with extension blocks. An adsorption cleaning plate is commonly connected between the two extension blocks. An adsorption scraper is arranged at the bottom end of the adsorption cleaning plate. A mounting cross plate is fixedly connected to the inner side of the wafer annealing intelligent chassis. An enhanced heater is installed at the upper end of the mounting cross plate. A plurality of second heat-conducting nets, a first heat-conducting net and a third heat-conducting net are respectively arranged laterally on the inner side of the wafer annealing intelligent chassis. A one-way heat dissipation mesh plate and a heat-matching mesh plate are respectively arranged at the lower inner side of the wafer annealing intelligent chassis.
[0007] Preferably, the wafer annealing intelligent chassis is laterally fixedly connected to a guiding inclined cabinet, a through slot is provided in the middle of the upper end of the guiding inclined cabinet, two threaded traction sleeves are slidably provided on the inner side of the through slot, and both side walls of the two threaded traction sleeves are provided with grooves used in conjunction with the through slot.
[0008] Preferably, a threaded screw is installed on the inner side of the guiding inclined cabinet for transverse rotation, and the threaded screw is interlaced with the threaded traction sleeve. A micro servo motor is installed on the inner side of the side-mounted material taking chamber, and the output end of the micro servo motor is fixedly connected to the threaded screw, and every two of the threaded traction sleeves are fixedly connected to the material bottom plate.
[0009] Preferably, one side of the upper surface of the material presenting bottom plate is rotatably connected with a linkage traction station plate, one side of the supporting tray is fixedly connected with a traction hook block, and the linkage traction station plate is slidably matched with the traction hook block.
[0010] Preferably, one end of the material bottom plate is fixedly connected to a side thermal insulation plate, and the middle part of the side thermal insulation plate is rotatably connected to a swing baffle.
[0011] Preferably, a worm gear is rotatably installed inside the wafer annealing intelligent chassis, and the swing baffle is used in conjunction with the worm gear.
[0012] Preferably, a second thermal insulation thickening plate is provided on the inner side of the wafer annealing intelligent chassis, the second thermal insulation thickening plate is fixedly connected to the inner wall of the wafer annealing intelligent chassis, one side of the second thermal insulation thickening plate is fixedly connected to a first supporting end plate, and one side of the first supporting end plate is fixedly installed with a plurality of first automatic retractors.
[0013] Preferably, the wafer annealing intelligent chassis is internally movablely provided with a first heat-insulating thickened plate, one side of the first heat-insulating thickened plate is fixedly connected to a second supporting end plate, one side wall of the second supporting end plate is fixedly connected to a plurality of fixed blocks, a plurality of telescopic thin rods are fixedly installed in the middle of the plurality of fixed blocks, and the plurality of telescopic thin rods are interlaced and matched with the first automatic telescope.
[0014] Preferably, an automatic opening and closing port is provided on the inner side of the side-mounted material-retrieving chamber, and the automatic opening and closing port is connected to the wafer annealing intelligent chassis. An isolation reinforcement plate is provided on the inner side of the side-mounted material-retrieving chamber, and a sealing card is provided on one side of the isolation reinforcement plate.
[0015] A method for annealing a wafer, the method specifically comprising the following steps: S1: By enhancing the internal temperature control of the wafer annealing intelligent chassis by the heater, the switch of the micro servo motor is turned on from the external controller. After the micro servo motor is running, the output shaft drives the threaded screw to rotate. When the threaded screw rotates, the threaded traction sleeve can be driven to move. After the threaded traction sleeve moves, the groove slides smoothly on the outer surface of the through groove. When the threaded traction sleeve slides, it moves to one side along the inclined surface of the guiding inclined cabinet, thereby driving the material presentation bottom plate to move. Under the movement of the material presentation bottom plate, the side insulation plate can be driven to move. When the side insulation plate moves to a predetermined distance, the worm rod pushes the swing baffle to enter the other side of the side insulation plate, and further engages with the turbine ring. Before and during wafer annealing, the worm rod can be controlled to rotate from the external controller. As the worm rod rotates, the turbine ring is driven to slide in a circular manner between the upper clamping ring and the lower limit ring. During the sliding process of the turbine ring, the extension block can be driven to move, thereby driving the adsorption cleaning plate to rotate in a circular manner. During the process, the adsorption scraper can be driven to clean the wafers placed on the tray, and as the adsorption cleaning plate rotates, the extension block can be driven to move in the opposite direction. The extension block slides on the outer surface of the turbine ring, making it telescopic in the micro telescopic cylinder to control the contact force on the crystal surface. When the annealing is completed, the micro servo motor moves in the opposite direction, driving the threaded screw to rotate in the opposite direction. When the threaded screw rotates, it drives the threaded traction sleeve block to move toward the side-mounted material-removing chamber, thereby driving the material bottom plate to move, thereby driving the tray to move and send the wafer out. Then the personnel only need to open the groove and rotate it outward, and when the linkage traction station plate rotates, it slides on the traction hook block and pulls the traction hook block to move, thereby driving the tray to move outward. Then the personnel can take out the wafer with tools. S2: After the annealing is completed, the micro servo motor moves in the opposite direction, driving the threaded screw to rotate in the opposite direction. When the threaded screw rotates, it drives the threaded traction sleeve to move in the direction of the side-mounted material-retrieving chamber, thereby driving the material bottom plate to move, thereby driving the support tray to move and send the wafer out. Then the personnel only need to open the groove and rotate it outward. When the linkage traction station plate rotates, it slides on the traction hook block and pulls the traction hook block to move, thereby driving the support tray to move outward. During the process, the swing baffle moves to a predetermined distance and then begins to contact the second support end plate, and then continues to move. The second support end plate drives the fixed block and the telescopic thin rod to move horizontally, and drives the second support end plate to move horizontally as a whole. After the movement, The second support end plate slides in contact with the second heat-insulating thickened plate, and when the second support end plate moves to a predetermined distance, it will collide with the first support end plate, and further the first heat-insulating thickened plate completely overlaps with the second heat-insulating thickened plate. At this time, the material bottom plate also moves to the lower part of the second heat-insulating thickened plate. At this time, the lower part of the second heat-insulating thickened plate becomes an independent space, and then the intelligent cooling base absorbs the heat of this space of the wafer annealing intelligent chassis from the one-way heat dissipation mesh plate, and discharges it through the ventilation maintenance mesh plate. At this time, the heat conductivity of the third heat-conducting network set above the independent space is the minimum value. After slowly cooling down for a predetermined time, pull the handle to open the thickened sealed door, and then operate from the automatic opening and closing mouth to take out the wafer; Beneficial effects of the present invention: 1. The wafer annealing equipment and method described in the present invention can control the rotation of the worm shaft from an external controller before and during wafer annealing. As the worm shaft rotates, the turbine ring is driven to slide in a circular manner between the upper clamping ring and the lower limit ring. During the sliding process of the turbine ring, the extension block can be driven to move, thereby driving the adsorption cleaning plate to rotate in a circular manner. During the process, the adsorption scraper can be driven to clean the wafer placed on the support tray. As the adsorption cleaning plate rotates, the extension block can be driven in the opposite direction to slide on the outer surface of the turbine ring, so that it can telescope in the micro telescopic cylinder to control the contact force on the crystal surface. When annealing, After the completion, the micro servo motor moves in the reverse direction, causing the threaded screw to rotate in the reverse direction. When the threaded screw rotates, the threaded traction sleeve moves toward the side-mounted material-retrieving chamber, thereby driving the material bottom plate to move, thereby driving the support tray to move and send the wafer out. Then the personnel only need to open the groove and rotate it outward, and the linkage traction station plate slides on the traction hook block when rotating, and pulls the traction hook block to move, thereby driving the support tray to move outward. After that, the personnel can take out the wafer with tools, which is beneficial for the wafer annealing equipment to clean the diffused impurities adsorbed on the wafer when in use, and prevent the adsorbed impurities from contaminating the wafer. 2. The wafer annealing equipment and method described in the present invention, through the overall horizontal movement of the second supporting end plate, after the movement, the second supporting end plate and the second thermal insulation thickened plate are fitted and slid, when the second supporting end plate moves to a predetermined distance, it will conflict with the first supporting end plate, and further the first thermal insulation thickened plate and the second thermal insulation thickened plate are completely overlapped, at this time the material bottom plate also moves to the lower part of the second thermal insulation thickened plate, at this time the lower part of the second thermal insulation thickened plate becomes an independent space, and then the intelligent cooling base absorbs the heat of this space of the wafer annealing intelligent chassis from the one-way heat dissipation mesh plate, and discharges it through the ventilation maintenance mesh plate, at this time the heat conductivity of the third heat conduction network arranged above the independent space is the minimum value, when the temperature is slowly cooled for a predetermined time, after pulling the handle to open the thickened sealing door, the wafer can be taken out from the automatic opening and closing mouth, which is conducive to being able to anneal the wafer and then take it out after gradual cooling, ensuring that the internal stress of the wafer is evenly distributed during annealing, and improving the overall annealing efficiency and quality. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The present invention is further described below in conjunction with the accompanying drawings and embodiments.
[0017] Figure 1 It is a schematic diagram of the overall structure of an embodiment of the present invention; Figure 2 For the present invention Figure 1 Schematic diagram of the cross-sectional structure of the wafer annealing intelligent chassis; Figure 3 For the present invention Figure 2 Schematic diagram of the internal structure of the wafer annealing intelligent chassis cutaway view; Figure 4 For the present invention Figure 3 The structural diagram on the bottom plate of the material is shown in the figure; Figure 5 For the present invention Figure 4 Schematic diagram of the structure from the middle side; Figure 6 For the present invention Figure 3 A schematic diagram of the structure of the first thermal insulation thickening plate and the second thermal insulation thickening plate; Figure 7 For the present invention Figure 5 Schematic diagram of the structure from the middle side; Figure 8 For the present invention Figure 5 Schematic diagram of the structure at point A in the middle.
[0018] In the figure: 1. Intelligent chassis for wafer annealing; 2. Intelligent cooling base; 3. Ventilation maintenance grid plate; 4. Handle; 5. Thickened sealed door; 6. Side-mounted material collection chamber; 7. Temperature controller; 8. Sensor display switch; 9. Enhanced heater; 10. Linkage traction station board; 11. Guide inclined cabinet; 12. Micro servo motor; 13. Sealing card; 14. Isolation reinforcement plate; 15. Automatic opening and closing; 16. One-way heat dissipation mesh plate; 17. Second heat conduction net; 18. Installation horizontal plate; 19. First heat conduction net; 20. Through slot; 21. First heat insulation thickening plate; 22. Third heat conduction net; 23. Second heat-insulating thickened plate; 24. First automatic telescopic device; 25. First supporting end plate; 26. Telescopic thin rod; 27. Fixed block; 28. Second supporting end plate; 29. Threaded screw; 30. Groove; 31. Threaded traction sleeve block; 32. Traction hook block; 33. External heat-conducting ring; 34. Limiting frame; 35. Miniature telescopic cylinder; 36. Upper clamping ring; 37. Turbine ring; 38. Swinging baffle; 39. Side insulation board; 40. Turbine rod; 41. Support tray; 42. Heat-conducting mesh plate; 43. Material bottom plate; 44. Extension block; 45. Adsorption cleaning plate; 46. Adsorption scraper; 47. Lower limiting ring. DETAILED DESCRIPTION
[0019] In view of the deficiencies of the prior art, the present invention provides a wafer annealing device and method, which solve the following problems: in the use of the existing wafer annealing device, firstly, during the wafer annealing process, the rapid rise or fall of the temperature in the device will lead to uneven stress distribution inside the wafer, thereby causing cracking defects on the wafer surface. In addition, if there are defects such as bubbles inside the wafer, it is also easy to cause the wafer to crack. Therefore, when selecting wafer materials, materials that meet the standards should be selected. In addition, during the wafer annealing process, some impurity elements will diffuse to the wafer surface due to the increase in temperature, which will cause the defect of reverse impurity diffusion on the wafer surface. This pollution will increase the content of impurities such as metal on the wafer surface, thereby affecting the performance of crystal devices. In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0020] The present invention is further described below in conjunction with the accompanying drawings and embodiments.
[0021] like Figure 1-Figure 8As shown, a wafer annealing device of the present invention comprises a wafer annealing intelligent chassis 1, a smart cooling base 2 is fixedly installed at the bottom end of the wafer annealing intelligent chassis 1, a ventilation maintenance grid plate 3 is arranged on one side of the smart cooling base 2, a side mounted material taking chamber 6 is fixedly installed on one side of the wafer annealing intelligent chassis 1, a thickened sealing door 5 is rotatably installed on one side of the side mounted material taking chamber 6, a handle 4 is arranged on one side of the thickened sealing door 5, a temperature controller 7 is installed on one side of the side mounted material taking chamber 6, a sensor display switch 8 is installed on one side of the wafer annealing intelligent chassis 1, and a material presentation bottom plate 4 is movably arranged on the inner side of the wafer annealing intelligent chassis 1. 3. The upper end of the material bottom plate 43 is fixedly connected to a limiting frame 34, one end of the limiting frame 34 is fixedly connected to an external heat conducting ring 33, the upper surface of the material bottom plate 43 is connected to a supporting tray 41, the inner side of the supporting tray 41 is provided with a wafer plate, one end of the limiting frame 34 is fixedly connected to an upper clamping ring 36, the upper clamping ring 36 is located on the inner side of the external heat conducting ring 33, the inner side of the external heat conducting ring 33 is fixedly connected to a lower limiting ring 47, the upper clamping ring 36 corresponds to the lower limiting ring 47, a turbine ring 37 is slidably installed between the upper clamping ring 36 and the lower limiting ring 47, the inner surface of the turbine ring 37 is fixedly connected to two miniature telescopic cylinders 35, The extended ends of the two miniature telescopic cylinders 35 are fixedly connected with extension blocks 44, and an adsorption cleaning plate 45 is commonly connected between the two extension blocks 44. An adsorption scraper 46 is arranged at the bottom end of the adsorption cleaning plate 45. The inner side of the wafer annealing intelligent chassis 1 is fixedly connected with a mounting horizontal plate 18, and an enhanced heater 9 is installed at the upper end of the mounting horizontal plate 18. The inner side of the wafer annealing intelligent chassis 1 is respectively provided with a plurality of second heat-conducting nets 17, a first heat-conducting net 19 and a third heat-conducting net 22. The lower inner side of the wafer annealing intelligent chassis 1 is respectively provided with a one-way heat dissipation mesh plate 16 and a heat-conducting mesh plate 42. The inner side of the wafer annealing intelligent chassis 1 is fixedly connected with a mounting horizontal plate 18, and an enhanced heater 9 is installed at the upper end of the mounting horizontal plate 18. The inner side of the wafer annealing intelligent chassis 1 is respectively provided with a plurality of second heat-conducting nets 17, a first heat-conducting net 19 and a third heat-conducting net 22. A guiding inclined cabinet 11 is connected, a through groove 20 is provided in the middle of the upper end of the guiding inclined cabinet 11, two threaded traction sleeves 31 are slidably provided on the inner side of the through groove 20, and both side walls of the two threaded traction sleeves 31 are provided with grooves 30 used in conjunction with the through groove 20, a threaded screw 29 is installed on the inner side of the guiding inclined cabinet 11 for horizontal rotation, the threaded screw 29 and the threaded traction sleeves 31 are interlaced and sleeved, a micro servo motor 12 is installed on the inner side of the side-mounted material taking chamber 6, and the output end of the micro servo motor 12 is fixedly connected to the threaded screw 29, and each two of the threaded traction sleeves 31 are fixedly connected to the material bottom plate 43.
[0022] In view of the above technical solution, the method specifically includes the following steps: by enhancing the internal temperature control of the wafer annealing intelligent chassis 1 by the heater 9, the switch of the micro servo motor 12 is turned on from the external controller, and after the micro servo motor 12 is running, the output shaft drives the threaded screw 29 to rotate, and when the threaded screw 29 rotates, it can drive the threaded traction sleeve 31 to move, and after the threaded traction sleeve 31 moves, the groove 30 slides smoothly on the outer surface of the through groove 20, and when the threaded traction sleeve 31 slides, it moves to one side along the inclined surface of the guiding inclined cabinet 11, thereby driving the material bottom plate 43 to move, The movement of the material presentation bottom plate 43 can drive the side insulation plate 39 to move. When the side insulation plate 39 moves to a predetermined distance, the worm rod 40 pushes the swing baffle 38 to enter the other side of the side insulation plate 39 and further engages with the turbine ring 37. The worm rod 40 can be controlled to rotate from an external controller before and during wafer annealing. As the worm rod 40 rotates, the turbine ring 37 is driven to slide in a circular manner between the upper retaining ring 36 and the lower limit ring 47. During the sliding process of the turbine ring 37, the extension block 44 can be driven to move, thereby driving the adsorption cleaning plate 45 to rotate in a circular manner. During the process, the adsorption scraper 46 can be driven to clean the wafers placed on the support tray 41. As the adsorption cleaning plate 45 rotates, the adsorption scraper 46 can be driven to clean the wafers placed on the support tray 41. The extension block 44 is driven to slide on the outer surface of the turbine ring 37, so that it can telescope in the micro telescopic cylinder 35 to control the contact force on the crystal surface. When the annealing is completed, the micro servo motor 12 moves in the opposite direction, so that the threaded screw 29 is driven to rotate in the opposite direction. When the threaded screw 29 rotates, it drives the threaded traction sleeve 31 to move toward the side-mounted material taking chamber 6, thereby driving the material bottom plate 43 to move, thereby driving the support tray 41 to move and send the wafer out. Then the personnel only need to open the groove 30 and rotate it outward, and the linkage traction station plate 10 slides on the traction hook block 32 when it rotates, and pulls the traction hook block 32 to move, thereby driving the support tray 41 to move outward, and then the personnel can take out the wafer with tools.
[0023] A further technical solution is that a linkage traction station plate 10 is rotatably connected to one side of the upper surface of the material bottom plate 43, a traction hook block 32 is fixedly connected to one side of the supporting tray 41, the linkage traction station plate 10 and the traction hook block 32 are slidably matched, one end of the material bottom plate 43 is fixedly connected to a side insulation plate 39, the middle part of the side insulation plate 39 is rotatably connected to a swing baffle 38, a vortex rod 40 is rotatably installed inside the wafer annealing intelligent chassis 1, the swing baffle 38 is used in conjunction with the vortex rod 40, a second heat insulation thickening plate 23 is arranged on the inner side of the wafer annealing intelligent chassis 1, the second heat insulation thickening plate 23 is fixedly connected to the inner wall of the wafer annealing intelligent chassis 1, one side of the second heat insulation thickening plate 23 is fixedly connected to the first support end plate 25, the first A plurality of first automatic telescoping devices 24 are fixedly installed on one side of a supporting end plate 25, a first heat-insulating thickened plate 21 is movably arranged inside the wafer annealing intelligent chassis 1, a second supporting end plate 28 is fixedly connected to one side of the first heat-insulating thickened plate 21, a plurality of fixed blocks 27 are fixedly connected to one side wall of the second supporting end plate 28, a telescopic thin rod 26 is fixedly installed in the middle of the plurality of fixed blocks 27, and the plurality of telescopic thin rods 26 are all interlaced and matched with the first automatic telescoping device 24, an automatic opening and closing port 15 is opened on the inner side of the side-mounted material taking chamber 6, the automatic opening and closing port 15 is connected to the wafer annealing intelligent chassis 1, an isolation reinforcement plate 14 is arranged on the inner side of the side-mounted material taking chamber 6, and a sealing card 13 is arranged on one side of the isolation reinforcement plate 14.
[0024] In view of the above technical scheme, the method specifically includes the following steps: after the annealing is completed, the micro servo motor 12 moves in the reverse direction, so that the threaded screw 29 is driven to rotate in the reverse direction, and when the threaded screw 29 rotates, the threaded traction sleeve block 31 is driven to move in the direction of the side-mounted material taking chamber 6, thereby driving the material bottom plate 43 to move, thereby driving the support tray 41 to move and send the wafer out, and then the personnel only need to open the groove 30 to rotate outward, and the linkage traction station plate 10 slides on the traction hook block 32 when rotating, and pulls the traction hook block 32 to move, thereby driving the support tray 41 to move outward. During the process, the swing baffle 38 moves to a predetermined distance and then begins to conflict with the second support end plate 28, and then continues to move. The second support end plate 28 drives the fixed block 27 and the telescopic thin rod 26 to move horizontally, and drives the second support end plate 28 moves horizontally as a whole, and after the movement, the second support end plate 28 and the second thermal insulation thickening plate 23 slide in contact with each other, and when the second support end plate 28 moves to a predetermined distance, it will collide with the first support end plate 25, and further the first thermal insulation thickening plate 21 and the second thermal insulation thickening plate 23 completely overlap, and at this time the material bottom plate 43 also moves to the lower part of the second thermal insulation thickening plate 23, and at this time the lower part of the second thermal insulation thickening plate 23 becomes an independent space, and then the intelligent cooling base 2 absorbs the heat of this space of the wafer annealing intelligent chassis 1 from the one-way heat dissipation mesh plate 16, and discharges it through the ventilation maintenance mesh plate 3. At this time, the heat conductivity of the third heat conducting net 22 arranged above the independent space is the minimum value, and after slowly cooling down for a predetermined time, pull the handle 4 to open the thickened sealing door 5, and then operate from the automatic opening and closing mouth 15 to take out the wafer.
[0025] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of the present invention is defined by the attached claims and their equivalents.
Claims
1. A wafer annealing device, characterized in that: The invention comprises an intelligent wafer annealing chassis (1), wherein an intelligent cooling base (2) is fixedly mounted on the bottom end of the intelligent wafer annealing chassis (1), a ventilation maintenance grid plate (3) is arranged on one side of the intelligent cooling base (2), a side-mounted material taking chamber (6) is fixedly mounted on one side of the intelligent wafer annealing chassis (1), a thickened sealing door (5) is rotatably mounted on one side of the side-mounted material taking chamber (6), a handle (4) is arranged on one side of the thickened sealing door (5), a temperature controller (7) is arranged on one side of the side-mounted material taking chamber (6), and the wafer annealing chassis (1) is provided with a temperature controller (7). A sensor display switch (8) is installed on one side of the annealing intelligent chassis (1); a material presentation bottom plate (43) is movably arranged on the inner side of the wafer annealing intelligent chassis (1); the upper end of the material presentation bottom plate (43) is fixedly connected to a limiting frame (34); one end of the limiting frame (34) is fixedly connected to an external heat conducting ring (33); the upper surface of the material presentation bottom plate (43) is connected to a supporting tray (41); a wafer tray is arranged on the inner side of the supporting tray (41); one end of the limiting frame (34) is fixedly connected to an upper clamping ring (36); the upper clamping ring ( 36) is located on the inner side of the external heat-conducting ring (33), the inner side of the external heat-conducting ring (33) is fixedly connected with a lower limit ring (47), the upper retaining ring (36) corresponds to the lower limit ring (47), a turbine ring (37) is slidably installed between the upper retaining ring (36) and the lower limit ring (47), the inner surface of the turbine ring (37) is fixedly connected with two miniature telescopic cylinders (35), the extended ends of the two miniature telescopic cylinders (35) are fixedly connected with extension blocks (44), and an adsorption cleaning device is commonly connected between the two extension blocks (44). The wafer annealing intelligent machine box (1) is provided with a plurality of second heat-conducting nets (17), a first heat-conducting net (19) and a third heat-conducting net (22) arranged laterally on the inner side of the wafer annealing intelligent machine box (1), and a one-way heat dissipation net plate (16) and a heat-conducting net plate (42) are arranged on the lower inner side of the wafer annealing intelligent machine box (1).
2. A wafer annealing device according to claim 1, characterized in that: The wafer annealing intelligent chassis (1) is laterally fixedly connected to a guide inclined cabinet (11), a through slot (20) is provided in the middle of the upper end of the guide inclined cabinet (11), two threaded traction sleeves (31) are slidably provided inside the through slot (20), and both side walls of the two threaded traction sleeves (31) are provided with grooves (30) for use with the through slot (20).
3. A wafer annealing device according to claim 2, characterized in that: A threaded screw (29) is installed on the inner side of the guiding inclined cabinet (11) for transverse rotation, and the threaded screw (29) and the threaded traction sleeve (31) are inserted and sleeved together. A micro servo motor (12) is installed on the inner side of the side-mounted material taking chamber (6), and the output end of the micro servo motor (12) is fixedly connected to the threaded screw (29), and every two of the threaded traction sleeves (31) are fixedly connected to the material presenting bottom plate (43).
4. The wafer annealing equipment according to claim 1, characterized in that: A linkage traction station plate (10) is rotatably connected to one side of the upper surface of the material presenting bottom plate (43), a traction hook block (32) is fixedly connected to one side of the supporting tray (41), and the linkage traction station plate (10) and the traction hook block (32) are slidably matched.
5. The wafer annealing equipment according to claim 1, characterized in that: One end of the material presentation bottom plate (43) is fixedly connected to a side temperature insulation plate (39), and the middle portion of the side temperature insulation plate (39) is rotatably connected to a swing baffle (38).
6. A wafer annealing device according to claim 5, characterized in that: A worm gear (40) is rotatably mounted inside the wafer annealing intelligent machine box (1), and the swinging baffle (38) is used in conjunction with the worm gear (40).
7. The wafer annealing equipment according to claim 1, characterized in that: A second heat-insulating thickened plate (23) is arranged on the inner side of the wafer annealing intelligent chassis (1); the second heat-insulating thickened plate (23) is fixedly connected to the inner wall of the wafer annealing intelligent chassis (1); a first supporting end plate (25) is fixedly connected to one side of the second heat-insulating thickened plate (23); and a plurality of first automatic retractors (24) are fixedly mounted to one side of the first supporting end plate (25).
8. The wafer annealing equipment according to claim 7, characterized in that: The wafer annealing intelligent chassis (1) is provided with a first heat-insulating thickened plate (21) movably disposed inside, a second supporting end plate (28) being fixedly connected to one side of the first heat-insulating thickened plate (21), a plurality of fixed blocks (27) being fixedly connected to one side wall of the second supporting end plate (28), a plurality of telescopic thin rods (26) being fixedly mounted in the middle of the plurality of fixed blocks (27), and the plurality of telescopic thin rods (26) are all interlaced and matched with the first automatic telescopic device (24).
9. The wafer annealing equipment according to claim 1, characterized in that: An automatic opening and closing opening (15) is provided on the inner side of the side-mounted material taking chamber (6), the automatic opening and closing opening (15) being connected to the wafer annealing intelligent chassis (1), an isolation reinforcement plate (14) is provided on the inner side of the side-mounted material taking chamber (6), and a sealing card (13) is provided on one side of the isolation reinforcement plate (14).
10. A method of wafer annealing equipment, characterized in that: The method specifically comprises the following steps: S1: By enhancing the internal temperature control of the wafer annealing intelligent chassis (1) by the heater (9), the switch of the micro servo motor (12) is turned on from the external controller. After the micro servo motor (12) is running, the output shaft drives the threaded screw (29) to rotate. When the threaded screw (29) rotates, it can drive the threaded traction sleeve (31) to move. After the threaded traction sleeve (31) moves, the groove (30) slides smoothly on the outer surface of the through groove (20). When the threaded traction sleeve (31) slides, it moves to one side along the inclined surface of the guiding inclined cabinet (11), thereby driving the material bottom plate (43) to move. The side insulation plate (39) can be driven to move under the movement of the material presentation bottom plate (43). When the side insulation plate (39) moves to a predetermined distance, the worm rod (40) pushes the swing baffle (38) to enter the other side of the side insulation plate (39) and further engages with the turbine ring (37). Before and during wafer annealing, the worm rod (40) can be controlled to rotate from an external controller. As the worm rod (40) rotates, the turbine ring (37) is driven to slide in a circular manner between the upper retaining ring (36) and the lower limit ring (47). During the sliding process of the turbine ring (37), the extension block (44) can be driven to move, thereby driving the adsorption cleaning plate (45) to rotate in a circular manner. During the process, the adsorption scraper (46) can be driven to clean the wafers placed on the support tray (41). As the adsorption cleaning plate (45) rotates, The extension block (44) can be driven in the reverse direction to slide on the outer surface of the turbine ring (37), so that it can telescope in the micro telescopic cylinder (35) to control the contact force on the crystal surface. When the annealing is completed, the micro servo motor (12) moves in the reverse direction, so that the threaded screw (29) is driven to rotate in the reverse direction. When the threaded screw (29) rotates, the threaded traction sleeve block (31) is driven to move in the direction of the side-mounted material taking chamber (6), thereby driving the material bottom plate (43) to move, thereby driving the support tray (41) to move and send the wafer out. Then, the personnel only need to open the groove (30) and rotate it outward, and when the linkage traction station plate (10) rotates, it slides on the traction hook block (32), and pulls the traction hook block (32) to move, thereby driving the support tray (41) to move outward, and then the personnel can take out the wafer with a tool; S2: After the annealing is completed, the micro servo motor (12) moves in the reverse direction, causing the threaded screw (29) to rotate in the reverse direction. When the threaded screw (29) rotates, the threaded traction sleeve (31) moves in the direction of the side-mounted material taking chamber (6), thereby driving the material bottom plate (43) to move, thereby driving the support tray (41) to move and send the wafer out. Then, the personnel only need to open the groove (30) and rotate it outward. When the linkage traction station plate (10) rotates, it slides on the traction hook block (32) and pulls the traction hook block (32) to move, thereby driving the support tray (41) to move outward. During the process, the swinging baffle (38) moves to a predetermined distance and then begins to contact the second support end plate (28), and then continues to move. The second support end plate (28) drives the fixed block (27) and the rear telescopic thin rod (26) to move horizontally, and drives the second support end plate (28) to move horizontally as a whole. After the movement, the second support end plate (28) and the second heat-insulating thickened plate (23) slide in contact with each other. When the second support end plate (28) moves to a predetermined distance, it will contact the first support end plate (25). Further, the first heat-insulating thickened plate (21) and the second heat-insulating thickened plate (23) completely overlap. At this time, the material bottom plate (43) also moves to the lower part of the second heat-insulating thickened plate (23). At this time, the lower part of the second heat-insulating thickened plate (23) becomes an independent space. Then, the intelligent cooling base (2) absorbs the heat of this space of the wafer annealing intelligent chassis (1) from the one-way heat dissipation mesh plate (16) and discharges it through the ventilation maintenance mesh plate (3). At this time, the heat conduction of the third heat-conducting mesh (22) arranged above the independent space is the minimum value. After the predetermined time of slow cooling, the handle (4) is pulled to open the thickened sealing door (5), and the wafer can be taken out from the automatic opening and closing opening (15).