Charge pump circuit with dynamic calibration
By using a combined MOS tube and a dynamic calibration circuit in the charge pump circuit, the problem of large current mismatch in the traditional charge pump circuit is solved, and higher charge pump performance and current matching are achieved.
Patent Information
- Application Number
- CN202411979423.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-29
AI Technical Summary
Traditional charge pump circuits have problems such as large current mismatch, which limits their application in high-performance systems.
A charge pump circuit with dynamic calibration is designed, and a combined MOS tube composed of PMOS tube M7 and PMOS tube M8 is used to realize the charging current source, and a combined MOS tube composed of NMOS tube M9 and NMOS tube M10 is used to realize the discharge current source, and dynamic feedback calibration and current compensation are realized through amplifiers OP3, OP4 and dynamic calibration circuit OP2.
The accuracy of the charge pump charge and discharge current source and output voltage swing are improved, the charge and discharge current matching of the charge pump circuit is enhanced, and the overall performance of the charge pump is improved.
Smart Images
Figure CN119906418A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a charge pump circuit with dynamic calibration. Background Art
[0002] The frequency synthesis achieved by phase-locked loop technology has the advantages of high output frequency, wide tuning range, good stability, and strong noise suppression ability, so it is widely used to realize the clock signal of integrated circuit systems. As the core module of the phase-locked loop, the charge pump directly determines the quality of the phase noise within the entire phase-locked loop band, which requires improving the performance characteristics of the charge pump.
[0003] Figure 1 It is a traditional charge pump circuit, which is composed of a PMOS tube M1, an NMOS tube M2, a PMOS tube M3, a PMOS tube M4, an NMOS tube M5, an NMOS tube M6 and an amplifier OP, wherein the PMOS tube M1 is used as a charging current source, the NMOS tube M2 is used as a discharging current source, and the PMOS tube M3, the PMOS tube M4, the NMOS tube M5 and the NMOS tube M6 are switch MOS tubes. The signal terminal UP and the signal terminal UPB are opposite signals, and the DN and the DNB are opposite signals. When the signal terminal UP is at a high potential and the signal terminal DN is at a high potential, the NMOS tube M2 as the discharging current source works and extracts the load current, so that the voltage of the output terminal Vctrl decreases; when the signal terminal UP is at a low potential and the signal terminal DN is at a low potential, the charging current of the charge pump charges the load so that the voltage of the output terminal Vctrl increases. When the signal terminal UP is at a high potential and the signal terminal DN is at a low potential, the two current sources do not work, the net current flowing out of the current source branch is zero, and the voltage of the output terminal Vctrl remains unchanged. Traditional charge pumps have problems such as large current mismatch, which limits the application of charge pumps in high-performance systems. Summary of the invention
[0004] The present invention aims to solve the above problems of the prior art and proposes a charge pump circuit with dynamic calibration. The technical solution of the present invention is as follows:
[0005] A charge pump circuit with dynamic calibration comprises: a charge pump main circuit, a discharge current compensation circuit and a dynamic calibration circuit, wherein the signal output end of the charge pump main circuit is respectively connected to the signal input end of the discharge current compensation circuit and the signal input end of the dynamic calibration circuit, the signal output end of the discharge current compensation circuit is respectively connected to the signal input end of the charge pump main circuit and the signal input end of the dynamic calibration circuit, the signal output end of the dynamic calibration circuit is respectively connected to the signal input end of the charge pump main circuit and the signal input end of the discharge current compensation circuit, the dynamic calibration circuit provides a dynamic feedback calibration signal for the charge pump main circuit, and the discharge current compensation circuit provides a compensation current for the discharge current of the charge pump main circuit, thereby realizing a charge pump circuit with dynamic calibration.
[0006] Furthermore, the charge pump main circuit includes: PMOS tube M7, PMOS tube M8, NMOS tube M9, NMOS tube M10, NMOS tube M11, PMOS tube M12, NMOS tube M13, PMOS tube M14, PMOS tube M15, NMOS tube M16, PMOS tube M17, NMOS tube M18 and amplifier OP1, wherein the source of PMOS tube M7 is connected to the external power supply VDD, and the drain of PMOS tube M7 is connected to the source of PMOS tube M8. The gate of the NMOS tube M11 is connected to the signal terminal UP, the gate of the PMOS tube M12 is connected to the gate of the NMOS tube M13 and the signal terminal UPB, the source of the NMOS tube M11 is connected to the drain of the PMOS tube M12, the reverse input terminal of the amplifier OP1, the output terminal of the amplifier OP1, The source of the PMOS tube M15 is connected to the drain of the NMOS tube M16, the gate of the PMOS tube M15 is connected to the signal terminal DNB, the gate of the NMOS tube M16 is respectively connected to the gate of the PMOS tube M17 and the signal terminal DN, the gate of the PMOS tube M14 is connected to the signal terminal UP, and the source of the NMOS tube M13 is respectively connected to the drain of the PMOS tube M14, the source of the PMOS tube M17, the drain of the NMOS tube M18, the non-inverting input terminal of the amplifier OP1, and the non-inverting input terminal of the amplifier OP3. The gate of the NMOS tube M18 is connected to the signal terminal DNB, the drain of the PMOS tube M17 is respectively connected to the source of the NMOS tube M18, the drain of the PMOS tube M15, the source of the NMOS tube M16 and the drain of the NMOS tube M9, the source of the NMOS tube M9 is connected to the drain of the NMOS tube M10, and the source of the NMOS tube M10 is connected to the external ground GND.
[0007] Further, the discharge current compensation circuit includes: NMOS tube M23, NMOS tube M24, PMOS tube M25, NMOS tube M26, NMOS tube M27, PMOS tube M28, PMOS tube M29, NMOS tube M30, PMOS tube M31, PMOS tube M32, amplifier OP3 and amplifier OP4, wherein the source of PMOS tube M28 is respectively connected to the source of PMOS tube M31 and the external power supply VDD, the drain of PMOS tube M28 is respectively connected to the gate of PMOS tube M28, the gate of PMOS tube M31 and the source of PMOS tube M29, the drain of PMOS tube M29 is respectively connected to the gate of PMOS tube M29, the gate of PMOS tube M32 and the drain of NMOS tube M30, the gate of NMOS tube M30 is connected to the signal terminal Vb2, and the NMOS The source of the transistor M30 is respectively connected to the output end of the amplifier OP4 and the inverting input end of the amplifier OP4, the inverting input end of the amplifier OP3 is respectively connected to the output end of the amplifier OP3 and the source of the PMOS transistor M25, the gate of the PMOS transistor M25 is connected to the signal terminal Vb1, the drain of the PMOS transistor M25 is respectively connected to the drain of the NMOS transistor M26, the gate of the NMOS transistor M26 and the gate of the NMOS transistor M23, the source of the NMOS transistor M26 is respectively connected to the drain of the NMOS transistor M27, the gate of the NMOS transistor M27 and the gate of the NMOS transistor M24, the source of the NMOS transistor M27 is respectively connected to the source of the NMOS transistor M24 and the external ground GND, the drain of the PMOS transistor M31 is connected to the source of the PMOS transistor M32, and the source of the NMOS transistor M23 is connected to the drain of the NMOS transistor M24.
[0008] Further, the dynamic calibration circuit includes: a PMOS tube M1, a PMOS tube M2, a PMOS tube M3, a PMOS tube M4, an NMOS tube M5, an NMOS tube M6, a PMOS tube M19, a PMOS tube M20, an NMOS tube M21, an NMOS tube M22, an amplifier OP2 and a capacitor C0, wherein the source of the PMOS tube M1 is respectively connected to the source of the PMOS tube M3, the source of the PMOS tube M19 and the external power supply VDD, the drain of the PMOS tube M1 is connected to the source of the PMOS tube M2, the drain of the PMOS tube M2 is respectively connected to the gate of the PMOS tube M1, the gate of the PMOS tube M3, the gate of the PMOS tube M2, the gate of the PMOS tube M4, the gate of the PMOS tube M19, the gate of the PMOS tube M20, the gate of the PMOS tube M7, the gate of the PMOS tube M8 and one end of the current source Ib, and the other end of the current source Ib is respectively connected to the NMOS tube M The source of the NMOS tube M6 is connected to the source of the NMOS tube M22, the source of the NMOS tube M24 and the external ground GND, the drain of the PMOS tube M3 is connected to the source of the PMOS tube M4, the drain of the PMOS tube M4 is respectively connected to the output end of the amplifier OP2, the drain of the NMOS tube M5, the gate of the NMOS tube M5, the gate of the NMOS tube M6, the gate of the NMOS tube M21, the gate of the NMOS tube M22, one end of the capacitor C0, the drain of the PMOS tube M32, the drain of the NMOS tube M23, the gate of the NMOS tube M9 and the gate of the NMOS tube M10, the source of the NMOS tube M5 is connected to the drain of the NMOS tube M6, the drain of the PMOS tube M19 is connected to the source of the PMOS tube M20, the drain of the PMOS tube M20 is respectively connected to the non-inverting input end of the amplifier OP2, the other end of the capacitor C0 and the drain of the NMOS tube M21, and the source of the NMOS tube M21 is connected to the drain of the NMOS tube M22.
[0009] Furthermore, in the main circuit of the charge pump, the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 realizes a charging current source, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 realizes a discharging current source, suppressing the influence of the channel modulation effect on the charging and discharging current, improving the accuracy of the charging and discharging current of the charge pump, and at the same time, the voltage consumed by the composite MOS tube is lower than the common source and common gate structure, thereby improving the output swing of the charge pump. The NMOS tube M11 and the PMOS tube M12, the NMOS tube M13 and the PMOS tube M14, the PMOS tube M15 and the NMOS tube M16, and the PMOS tube M17 and the NMOS tube M18 respectively constitute complementary switches, which realize simultaneous opening and closing, thereby suppressing the charge sharing effect, the clock feedthrough and the charge injection effect. An amplifier OP1 connected with a unit gain negative feedback is connected between the drain of the PMOS tube M12 and the drain of the PMOS tube M14, so that the drain of the PMOS tube M12 and the drain of the PMOS tube M14 have the same voltage during the charging and discharging process of the circuit, so that the output voltage of the charge pump has continuity, thereby suppressing the influence of the charge sharing effect on the output voltage of the charge pump and improving the current matching of the circuit. At the same time, the PMOS tube M7, the PMOS tube M1 and the PMOS tube M3 have the same channel width-to-length ratio, the PMOS tube M8, the PMOS tube M2 and the PMOS tube M4 have the same channel width-to-length ratio, the NMOS tube M9 and the NMOS tube M5 have the same channel width-to-length ratio, the NMOS tube M10 and the NMOS tube M6 have the same channel width-to-length ratio, and the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 and the composite MOS tube composed of the PMOS tube M1 and the PMOS tube M2 form a current mirror, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 and the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 form a current mirror, so the charging current I flowing through the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 is UP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 DN Yes UP =I DN =I b , where I b is the current of current source Ib.
[0010] Furthermore, in the discharge current compensation circuit, the amplifier OP3 is connected in a unit gain negative feedback connection, forcing the source voltage of the PMOS tube M25 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of the PMOS tube M25 25 for Among them, μ p is the hole mobility; C ox is the gate oxide capacitance per unit area; (W / L)25 For PMOS tube M 25 The aspect ratio, V b1 is the voltage of the signal terminal Vb1, V THp is the threshold voltage of the PMOS tube. The channel width-to-length ratio of the NMOS tube M23 is n times that of the NMOS tube M26, the channel width-to-length ratio of the NMOS tube M24 is n times that of the NMOS tube M27, and the current I 23 For I 23 =nI 25 When the charge pump output voltage VCP CP Gradually increases to the external power supply voltage V DD During the process, the composite tube formed by the PMOS tube M7 and the PMOS tube M8 will enter the linear region, so that the charging current I flowing through the composite tube formed by the PMOS tube M7 and the PMOS tube M8 UP At the same time, the charge pump output voltage VCP CP During the gradual increase, V CP -V b1 >|V THp |, the PMOS tube M25 is turned on, and the NMOS tube M30 works in the cut-off region. At this time, the NMOS tube M23 branch extracts a part of the circuit, so that the current I5 flowing through the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 is I5=I b -nI 25 At the same time, the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 and the composite MOS tube composed of NMOS tube M5 and NMOS tube M6 form a current mirror, so as the charge pump output terminal VCP voltage V CP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 gradually increases. DN Also gradually decreases, that is, as the charging current I UP Reduce the discharge current I of the circuit at the same time DN Also reduced, so by optimizing the corresponding parameters can increase the charge pump discharge current I DN With charging current I UP The matching.
[0011] Furthermore, in the discharge current compensation circuit, the amplifier OP4 is connected in a unit gain negative feedback connection, forcing the source voltage of the NMOS tube M30 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of NMOS tube M30 30 for Among them, μ n is the electron mobility; (W / L) 30 For NMOS tube M 30 The aspect ratio, Vb2 is the voltage of signal terminal Vb2, V THn is the threshold voltage of the NMOS tube. The channel width-to-length ratio of the PMOS tube M32 is m times that of the PMOS tube M29, the channel width-to-length ratio of the PMOS tube M31 is m times that of the PMOS tube M28, and the current I 32 For I 32 =mI 30 When the charge pump output voltage VCP CP In the process of gradually decreasing to the external ground GND, the composite tube composed of NMOS tube M9 and NMOS tube M10 will enter the linear region, and the discharge current I flowing through the composite tube composed of NMOS tube M9 and NMOS tube M10 DN At the same time, the charge pump output voltage VCP CP Gradually reduce the process and V b2 -V CP >V THn , NMOS tube M30 is turned on, PMOS tube M25 works in the cut-off region, and the current of PMOS tube M32 is injected into NMOS tube M5. At this time, the current flowing through NMOS tube M5 increases, so that the current I5 flowing through the composite MOS tube composed of NMOS tube M5 and NMOS tube M6 is I5=I b +I 32 =I b +mI 30 At the same time, the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 and the composite MOS tube composed of NMOS tube M5 and NMOS tube M6 form a current mirror, so as the charge pump output terminal VCP voltage V CP The current of the PMOS tube M32 is injected into the NMOS tube M5, thereby suppressing the discharge current I flowing through the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10. DN Reduce, thereby increasing the circuit's discharge current I DN With charging current I UP When the charge pump output voltage V CP Close to V DD / 2, there is V CP -V b1 <|V THp | and V b2 -V CP <V THn , the PMOS tube M25 is turned off, and the NMOS tube M30 is turned off. At this time, the discharge current compensation circuit does not work, so the discharge current I DN With charging current I UP For I DN =I UP =I b .
[0012] Furthermore, in the dynamic calibration circuit, the amplifier OP2 forces the drain voltage of the NMOS tube M21 to be equal to the voltage V of the charge pump output terminal VCP. CP The negative feedback system is formed by amplifier OP2, NMOS tube M5, NMOS tube M21 to realize dynamic feedback calibration, so that the charge pump output voltage V CP When the current of the PMOS tube M4 changes, the dynamic feedback calibration technology is used to make the current of the PMOS tube M4 equal to the current of the NMOS tube M5, and the composite MOS tube composed of the PMOS tubes M7 and M8 and the composite MOS tube composed of the PMOS tubes M1 and M2 form a current mirror, and the composite MOS tube composed of the NMOS tubes M9 and M10 and the composite MOS tubes composed of the NMOS tubes M5 and M6 form a current mirror, so that the charging current and the discharging current of the charge pump match. That is, when the charge pump output voltage V CP When the charge pump output voltage V increases, the output of the amplifier OP2 decreases, the current of the PMOS tube M4 is greater than the current of the NMOS tube M5, so that part of the current flowing through the PMOS tube M4 flows from the output end of the amplifier OP2 into the amplifier OP2, and the gate voltages of the NMOS tubes M21 and M22 decrease, so that the voltage at the same-direction input end of the amplifier OP2 increases, thereby restoring the voltage at the output end of the amplifier OP2 to a normal value, so that the current flowing through the PMOS tube M4 is equal to the current flowing through the NMOS tube M5; similarly, when the charge pump output voltage V CP When the voltage decreases, the output voltage of the amplifier OP2 increases, the current of the PMOS tube M4 is less than the current of the NMOS tube M5, a part of the current flows out of the output end of the amplifier OP2 and is injected into the NMOS tube M5, the gate voltages of the NMOS tubes M21 and M22 rise and reduce the voltage of the same-direction input end of the amplifier OP2, thereby restoring the voltage of the output end of the amplifier OP2 to a normal value, making the current flowing through the PMOS tube M4 equal to the current flowing through the NMOS tube M5, thereby realizing the dynamic calibration of the circuit and increasing the charge pump discharge current I DN With charging current I UP The matching.
[0013] The advantages and beneficial effects of the present invention are as follows:
[0014] The present invention provides a charge pump circuit with dynamic calibration, adopts a combined MOS tube consisting of a PMOS tube M7 and a PMOS tube M8 to realize a charging current source, adopts a combined MOS tube consisting of an NMOS tube M9 and an NMOS tube M10 to realize a discharging current source, thereby improving the accuracy of the charging and discharging current sources and improving the output voltage swing of the circuit; when the output voltage of the circuit rises from 1 / 2 of the power supply voltage to the power supply voltage, a compensation circuit consisting of an amplifier OP3, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, an NMOS tube M23 and an NMOS tube M24 is used to adjust the discharge current of the circuit; when the output voltage of the circuit rises from 1 / 2 of the power supply voltage to the power supply voltage, a compensation circuit consisting of an amplifier OP3, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, an NMOS tube M23 and an NMOS tube M24 is used to adjust the discharge current of the circuit; when the output voltage of the circuit falls from 1 / 2 of the power supply voltage In the process of dropping to the ground line, a compensation circuit composed of an amplifier OP4, an NMOS tube M30, a PMOS tube M29, a PMOS tube M28, a PMOS tube M31 and a PMOS tube M32 is used to adjust the charging current of the circuit, thereby improving the matching of the charging and discharging currents of the circuit; a negative feedback dynamic calibration circuit composed of an amplifier OP2, an NMOS tube M5, an NMOS tube M6, an NMOS tube M21 and an NMOS tube M22 is used to adjust the current flowing into / out of the output end of the amplifier OP2, thereby dynamically adjusting the charging and discharging currents of the charge pump circuit, improving the matching of the charging current and the discharging current of the circuit, and thus realizing a charge pump circuit with dynamic calibration. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 This is a schematic diagram of a traditional charge pump circuit;
[0016] Figure 2 A schematic diagram of a charge pump circuit with dynamic calibration according to a preferred embodiment of the present invention is provided;
[0017] Figure 3 A simulation diagram of the charging and discharging current and the output voltage of a charge pump circuit with dynamic calibration is provided for providing a preferred embodiment of the present invention. DETAILED DESCRIPTION
[0018] The following will describe the technical solutions in the embodiments of the present invention in detail in conjunction with the accompanying drawings in the embodiments of the present invention. The described embodiments are only part of the embodiments of the present invention.
[0019] The technical solution of the present invention to solve the above technical problems is:
[0020] In the embodiment of the present application, a combined MOS tube consisting of a PMOS tube M7 and a PMOS tube M8 is used to realize a charging current source, and a combined MOS tube consisting of an NMOS tube M9 and an NMOS tube M10 is used to realize a discharging current source, thereby improving the accuracy of the charging and discharging current sources and increasing the output voltage swing of the circuit; when the output voltage of the circuit rises from 1 / 2 of the power supply voltage to the power supply voltage, a compensation circuit consisting of an amplifier OP3, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, an NMOS tube M23, and an NMOS tube M24 is used to adjust the discharge current of the circuit; when the output voltage of the circuit drops from 1 / 2 of the power supply voltage to the ground line, the compensation circuit is used to adjust the discharge current of the circuit. , a compensation circuit composed of an amplifier OP4, an NMOS tube M30, a PMOS tube M29, a PMOS tube M28, a PMOS tube M31 and a PMOS tube M32 is used to adjust the charging current of the circuit, thereby improving the matching of the charging and discharging currents of the circuit; a negative feedback dynamic calibration circuit composed of an amplifier OP2, an NMOS tube M5, an NMOS tube M6, an NMOS tube M21 and an NMOS tube M22 is used to adjust the current flowing into / out of the output end of the amplifier OP2, thereby dynamically adjusting the charging and discharging currents of the charge pump circuit, improving the matching of the charging current and the discharging current of the circuit, and thus realizing a charge pump circuit with dynamic calibration.
[0021] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0022] Example
[0023] A charge pump circuit with dynamic calibration, such as Figure 2 As shown, it includes a charge pump main circuit 1, a discharge current compensation circuit 2 and a dynamic calibration circuit 3; wherein, the signal output end of the charge pump main circuit 1 is respectively connected to the signal input end of the discharge current compensation circuit 2 and the signal input end of the dynamic calibration circuit 3, the signal output end of the discharge current compensation circuit 2 is respectively connected to the signal input end of the charge pump main circuit 1 and the signal input end of the dynamic calibration circuit 3, the signal output end of the dynamic calibration circuit 3 is respectively connected to the signal input end of the charge pump main circuit 1 and the signal input end of the discharge current compensation circuit 2, the dynamic calibration circuit 3 provides a dynamic feedback calibration signal for the charge pump main circuit 1, and the discharge current compensation circuit 2 provides a compensation current for the discharge current of the charge pump main circuit 1, thereby realizing a charge pump circuit with dynamic calibration.
[0024] As a preferred technical solution, Figure 2As shown, the charge pump main circuit 1 includes: PMOS tube M7, PMOS tube M8, NMOS tube M9, NMOS tube M10, NMOS tube M11, PMOS tube M12, NMOS tube M13, PMOS tube M14, PMOS tube M15, NMOS tube M16, PMOS tube M17, NMOS tube M18 and amplifier OP1, wherein the source of PMOS tube M7 is connected to the external power supply VDD, the drain of PMOS tube M7 is connected to the source of PMOS tube M8 The drain of the PMOS tube M8 is respectively connected to the drain of the NMOS tube M11, the source of the PMOS tube M12, the drain of the NMOS tube M13 and the source of the PMOS tube M14, the gate of the NMOS tube M11 is connected to the signal terminal UP, the gate of the PMOS tube M12 is respectively connected to the gate of the NMOS tube M13 and the signal terminal UPB, the source of the NMOS tube M11 is respectively connected to the drain of the PMOS tube M12, the reverse input terminal of the amplifier OP1, the output terminal of the amplifier OP1, the The source of the MOS tube M15 is connected to the drain of the NMOS tube M16, the gate of the PMOS tube M15 is connected to the signal terminal DNB, the gate of the NMOS tube M16 is connected to the gate of the PMOS tube M17 and the signal terminal DN, the gate of the PMOS tube M14 is connected to the signal terminal UP, and the source of the NMOS tube M13 is connected to the drain of the PMOS tube M14, the source of the PMOS tube M17, the drain of the NMOS tube M18, the non-inverting input terminal of the amplifier OP1, and the non-inverting input terminal of the amplifier OP3. The gate of the NMOS tube M18 is connected to the signal terminal DNB, the drain of the PMOS tube M17 is respectively connected to the source of the NMOS tube M18, the drain of the PMOS tube M15, the source of the NMOS tube M16 and the drain of the NMOS tube M9, the source of the NMOS tube M9 is connected to the drain of the NMOS tube M10, and the source of the NMOS tube M10 is connected to the external ground GND;
[0025] The discharge current compensation circuit 2 includes: an NMOS tube M23, an NMOS tube M24, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, a PMOS tube M28, a PMOS tube M29, an NMOS tube M30, a PMOS tube M31, a PMOS tube M32, an amplifier OP3 and an amplifier OP4, wherein the source of the PMOS tube M28 is respectively connected to the source of the PMOS tube M31 and the external power supply VDD, the drain of the PMOS tube M28 is respectively connected to the gate of the PMOS tube M28, the gate of the PMOS tube M31 and the source of the PMOS tube M29, the drain of the PMOS tube M29 is respectively connected to the gate of the PMOS tube M29, the gate of the PMOS tube M32 and the drain of the NMOS tube M30, the gate of the NMOS tube M30 is connected to the signal terminal Vb2, and the NMOS tube M30 is connected to the signal terminal Vb3. The source of the transistor M30 is respectively connected to the output terminal of the amplifier OP4 and the inverting input terminal of the amplifier OP4, the inverting input terminal of the amplifier OP3 is respectively connected to the output terminal of the amplifier OP3 and the source of the PMOS transistor M25, the gate of the PMOS transistor M25 is connected to the signal terminal Vb1, the drain of the PMOS transistor M25 is respectively connected to the drain of the NMOS transistor M26, the gate of the NMOS transistor M26 and the gate of the NMOS transistor M23, the source of the NMOS transistor M26 is respectively connected to the drain of the NMOS transistor M27, the gate of the NMOS transistor M27 and the gate of the NMOS transistor M24, the source of the NMOS transistor M27 is respectively connected to the source of the NMOS transistor M24 and the external ground GND, the drain of the PMOS transistor M31 is connected to the source of the PMOS transistor M32, and the source of the NMOS transistor M23 is connected to the drain of the NMOS transistor M24;
[0026] The dynamic calibration circuit 3 comprises: a PMOS tube M1, a PMOS tube M2, a PMOS tube M3, a PMOS tube M4, an NMOS tube M5, an NMOS tube M6, a PMOS tube M19, a PMOS tube M20, an NMOS tube M21, an NMOS tube M22, an amplifier OP2 and a capacitor C0, wherein the source of the PMOS tube M1 is respectively connected to the source of the PMOS tube M3, the source of the PMOS tube M19 and the external power supply VDD, the drain of the PMOS tube M1 is connected to the source of the PMOS tube M2, the drain of the PMOS tube M2 is respectively connected to the gate of the PMOS tube M1, the gate of the PMOS tube M3, the gate of the PMOS tube M2, the gate of the PMOS tube M4, the gate of the PMOS tube M19, the gate of the PMOS tube M20, the gate of the PMOS tube M7, the gate of the PMOS tube M8 and one end of the current source Ib, and the other end of the current source Ib is respectively connected to the gate of the NMOS tube M6. The source of the PMOS tube M3 is connected to the source of the NMOS tube M22 and the external ground GND, the drain of the PMOS tube M3 is connected to the source of the PMOS tube M4, the drain of the PMOS tube M4 is respectively connected to the output end of the amplifier OP2, the drain of the NMOS tube M5, the gate of the NMOS tube M5, the gate of the NMOS tube M6, the gate of the NMOS tube M21, the gate of the NMOS tube M22, one end of the capacitor C0, the drain of the PMOS tube M32, the drain of the NMOS tube M23, the gate of the NMOS tube M9 and the gate of the NMOS tube M10, the source of the NMOS tube M5 is connected to the drain of the NMOS tube M6, the drain of the PMOS tube M19 is connected to the source of the PMOS tube M20, the drain of the PMOS tube M20 is respectively connected to the non-inverting input end of the amplifier OP2, the other end of the capacitor C0 and the drain of the NMOS tube M21, and the source of the NMOS tube M21 is connected to the drain of the NMOS tube M22.
[0027] In the charge pump main circuit 1, the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 realizes the charging current source, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 realizes the discharging current source, suppressing the influence of the channel modulation effect on the charging and discharging current, improving the accuracy of the charge pump charging and discharging current, and at the same time, the voltage consumed by the composite MOS tube is lower than the common source and common gate structure, thereby improving the output swing of the charge pump. The NMOS tube M11 and the PMOS tube M12, the NMOS tube M13 and the PMOS tube M14, the PMOS tube M15 and the NMOS tube M16, and the PMOS tube M17 and the NMOS tube M18 respectively constitute complementary switches, which realize simultaneous opening and closing, thereby suppressing the charge sharing effect, clock feedthrough and charge injection effect. An amplifier OP1 with a unit gain negative feedback connection is connected between the drain of the PMOS tube M12 and the drain of the PMOS tube M14 to ensure that the drain of the PMOS tube M12 and the drain of the PMOS tube M14 have the same voltage during the charging and discharging process of the circuit, so that the output voltage of the charge pump has continuity, thereby suppressing the influence of the charge sharing effect on the output voltage of the charge pump and improving the current matching of the circuit. At the same time, the PMOS tube M7, the PMOS tube M1 and the PMOS tube M3 have the same channel width-to-length ratio, the PMOS tube M8, the PMOS tube M2 and the PMOS tube M4 have the same channel width-to-length ratio, the NMOS tube M9 and the NMOS tube M5 have the same channel width-to-length ratio, the NMOS tube M10 and the NMOS tube M6 have the same channel width-to-length ratio, and the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 and the composite MOS tube composed of the PMOS tube M1 and the PMOS tube M2 form a current mirror, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 and the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 form a current mirror, so the charging current I flowing through the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 is UP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 DN have
[0028] I UP =I DN =I b (1)
[0029] In the formula, I b is the current of current source Ib.
[0030] In the discharge current compensation circuit 2, the amplifier OP3 is connected in a unit gain negative feedback connection, forcing the source voltage of the PMOS tube M25 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of the PMOS tube M25 25 for
[0031]
[0032] In the formula, μ p is the hole mobility; C ox is the gate oxide capacitance per unit area; (W / L) 25 For PMOS tube M 25 The aspect ratio, V b1 is the voltage of the signal terminal Vb1, V THp is the threshold voltage of the PMOS tube. The channel width-to-length ratio of the NMOS tube M23 is n times that of the NMOS tube M26, the channel width-to-length ratio of the NMOS tube M24 is n times that of the NMOS tube M27, and the current I 23 For I 23 =nI 25 When the charge pump output voltage VCP CP Gradually increases to the external power supply voltage V DD During the process, the composite tube formed by the PMOS tube M7 and the PMOS tube M8 will enter the linear region, so that the charging current I flowing through the composite tube formed by the PMOS tube M7 and the PMOS tube M8 UP At the same time, the charge pump output voltage VCP CP During the gradual increase, V CP -V b1 >|V THp |, the PMOS tube M25 is turned on, and the NMOS tube M30 works in the cut-off region. At this time, the NMOS tube M23 branch extracts a part of the circuit, so that the current I5 flowing through the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 is
[0033] I5=I b -nI 25 (3)
[0034] At the same time, the composite MOS transistor composed of NMOS transistors M9 and M10 and the composite MOS transistor composed of NMOS transistors M5 and M6 form a current mirror. From equations (2) and (3), it can be seen that as the voltage VCP at the output end of the charge pump increases, CP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 gradually increases. DN Also gradually decreases, that is, as the charging current I UP Reduce the discharge current I of the circuit at the same time DN Also reduced, so by optimizing the corresponding parameters can increase the charge pump discharge current I DN With charging current I UP The matching.
[0035] Amplifier OP4 is connected as a unit gain negative feedback, forcing the source voltage of NMOS tube M30 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of NMOS tube M30 30 for
[0036]
[0037] In the formula, μ n is the electron mobility; (W / L) 30 For NMOS tube M 30 The aspect ratio, V b2 is the voltage of signal terminal Vb2, V THn is the threshold voltage of the NMOS tube. The channel width-to-length ratio of the PMOS tube M32 is m times that of the PMOS tube M29, the channel width-to-length ratio of the PMOS tube M31 is m times that of the PMOS tube M28, and the current I 32 For I 32 =mI 30 When the charge pump output voltage VCP CP In the process of gradually decreasing to the external ground GND, the composite tube composed of NMOS tube M9 and NMOS tube M10 will enter the linear region, and the discharge current I flowing through the composite tube composed of NMOS tube M9 and NMOS tube M10 DN At the same time, the charge pump output voltage VCP CP Gradually reduce the process and V b2 -V CP >V THn , NMOS tube M30 is turned on, PMOS tube M25 works in the cut-off region, and the current of PMOS tube M32 is injected into NMOS tube M5. At this time, the current flowing through NMOS tube M5 increases, so that the current I5 flowing through the composite MOS tube composed of NMOS tube M5 and NMOS tube M6 is
[0038] I5=I b +I 32 =I b +mI 30 (5)
[0039] At the same time, the composite MOS transistor composed of NMOS transistors M9 and M10 and the composite MOS transistor composed of NMOS transistors M5 and M6 form a current mirror. It can be seen from equations (4) and (5) that as the voltage VCP at the output end of the charge pump increases, CP The current of the PMOS tube M32 is injected into the NMOS tube M5, thereby suppressing the discharge current I flowing through the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10. DN Reduce, thereby increasing the circuit's discharge current I DNWith charging current I UP The matching.
[0040] When the charge pump output voltage V CP Close to V DD / 2, there is V CP -V b1 <|V THp | and V b2 -V CP <V THn , the PMOS tube M25 is turned off, and the NMOS tube M30 is turned off. At this time, the discharge current compensation circuit does not work, so the discharge current I DN With charging current I UP For I DN =I UP =I b .
[0041] In the dynamic calibration circuit 3, the amplifier OP2 forces the drain voltage of the NMOS tube M21 to be equal to the voltage V of the charge pump output terminal VCP. CP The negative feedback system is formed by amplifier OP2, NMOS tube M5, NMOS tube M21 to realize dynamic feedback calibration, so that the charge pump output voltage V CP When the current of the PMOS tube M4 changes, the dynamic feedback calibration technology is used to make the current of the PMOS tube M4 equal to the current of the NMOS tube M5, and the composite MOS tube composed of the PMOS tubes M7 and M8 and the composite MOS tube composed of the PMOS tubes M1 and M2 form a current mirror, and the composite MOS tube composed of the NMOS tubes M9 and M10 and the composite MOS tubes composed of the NMOS tubes M5 and M6 form a current mirror, so that the charging current and the discharging current of the charge pump match. That is, when the charge pump output voltage V CP When the charge pump output voltage V increases, the output of the amplifier OP2 decreases, the current of the PMOS tube M4 is greater than the current of the NMOS tube M5, so that part of the current flowing through the PMOS tube M4 flows from the output end of the amplifier OP2 into the amplifier OP2, and the gate voltages of the NMOS tubes M21 and M22 decrease, so that the voltage at the same-direction input end of the amplifier OP2 increases, thereby restoring the voltage at the output end of the amplifier OP2 to a normal value, so that the current flowing through the PMOS tube M4 is equal to the current flowing through the NMOS tube M5; similarly, when the charge pump output voltage V CPWhen the voltage decreases, the output voltage of the amplifier OP2 increases, the current of the PMOS tube M4 is less than the current of the NMOS tube M5, a part of the current flows out of the output end of the amplifier OP2 and is injected into the NMOS tube M5, the gate voltages of the NMOS tubes M21 and M22 rise and reduce the voltage of the same-direction input end of the amplifier OP2, thereby restoring the voltage of the output end of the amplifier OP2 to a normal value, making the current flowing through the PMOS tube M4 equal to the current flowing through the NMOS tube M5, thereby realizing the dynamic calibration of the circuit and increasing the charge pump discharge current I DN With charging current I UP The matching.
[0042] Figure 3 The following is a simulation curve of the charge-discharge current and output voltage change of the charge pump circuit with dynamic calibration of the present invention, wherein the abscissa is the circuit output voltage and the ordinate is the circuit charge-discharge current. The simulation results show that under the conditions of 1.2V power supply voltage and 40μA charge-discharge current, when the output voltage changes from 0.19V to 0.98V, the charge-discharge current mismatch is less than 0.25%.
[0043] In the above-mentioned embodiment of the present application, a charge pump circuit with dynamic calibration includes a charge pump main circuit, a discharge current compensation circuit and a dynamic calibration circuit. The embodiment of the present application uses a combined MOS tube composed of a PMOS tube M7 and a PMOS tube M8 to realize a charging current source, and uses a combined MOS tube composed of an NMOS tube M9 and an NMOS tube M10 to realize a discharge current source, thereby improving the accuracy of the charge and discharge current source and increasing the circuit output voltage swing; when the circuit output voltage rises from 1 / 2 of the power supply voltage to the power supply voltage, a compensation circuit composed of an amplifier OP3, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, an NMOS tube M23 and an NMOS tube M24 is used to adjust the circuit's discharge current, and when the circuit output voltage drops from 1 / 2 of the power supply voltage to the ground line, the compensation circuit is used to adjust the circuit's discharge current. , a compensation circuit composed of an amplifier OP4, an NMOS tube M30, a PMOS tube M29, a PMOS tube M28, a PMOS tube M31 and a PMOS tube M32 is used to adjust the discharge current of the circuit, thereby improving the matching of the circuit charge and discharge current; a negative feedback dynamic calibration circuit composed of an amplifier OP2, an NMOS tube M5, an NMOS tube M6, an NMOS tube M21 and an NMOS tube M22 is used to adjust the current flowing into / out of the output end of the amplifier OP2, thereby dynamically adjusting the charge and discharge current of the charge pump circuit, improving the matching of the circuit charge current and discharge current, and thus realizing a charge pump circuit with dynamic calibration.
[0044] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.
[0045] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0046] The above embodiments should be understood to be only used to illustrate the present invention and not to limit the protection scope of the present invention. After reading the contents of the present invention, technicians can make various changes or modifications to the present invention, and these equivalent changes and modifications also fall within the scope defined by the claims of the present invention.
Claims
1. A charge pump circuit with dynamic calibration, characterized in that: include: A charge pump main circuit (1), a discharge current compensation circuit (2) and a dynamic calibration circuit (3), wherein the signal output end of the charge pump main circuit (1) is respectively connected to the signal input end of the discharge current compensation circuit (2) and the signal input end of the dynamic calibration circuit (3), the signal output end of the discharge current compensation circuit (2) is respectively connected to the signal input end of the charge pump main circuit (1) and the signal input end of the dynamic calibration circuit (3), the signal output end of the dynamic calibration circuit (3) is respectively connected to the signal input end of the charge pump main circuit (1) and the signal input end of the discharge current compensation circuit (2), the dynamic calibration circuit (3) provides a dynamic feedback calibration signal for the charge pump main circuit (1), and the discharge current compensation circuit (2) provides a compensation current for the discharge current of the charge pump main circuit (1), thereby realizing a charge pump circuit with dynamic calibration.
2. A charge pump circuit with dynamic calibration according to claim 1, characterized in that: The charge pump main circuit (1) comprises: a PMOS tube M7, a PMOS tube M8, an NMOS tube M9, an NMOS tube M10, an NMOS tube M11, a PMOS tube M12, an NMOS tube M13, a PMOS tube M14, a PMOS tube M15, an NMOS tube M16, a PMOS tube M17, an NMOS tube M18 and an amplifier OP1, wherein the source of the PMOS tube M7 is connected to an external power supply VDD, the drain of the PMOS tube M7 is connected to the source of the PMOS tube M8, The drain of the PMOS tube M8 is respectively connected to the drain of the NMOS tube M11, the source of the PMOS tube M12, the drain of the NMOS tube M13 and the source of the PMOS tube M14, the gate of the NMOS tube M11 is connected to the signal terminal UP, the gate of the PMOS tube M12 is respectively connected to the gate of the NMOS tube M13 and the signal terminal UPB, the source of the NMOS tube M11 is respectively connected to the drain of the PMOS tube M12, the inverting input terminal of the amplifier OP1, the output terminal of the amplifier OP1, the The source of the MOS tube M15 is connected to the drain of the NMOS tube M16, the gate of the PMOS tube M15 is connected to the signal terminal DNB, the gate of the NMOS tube M16 is connected to the gate of the PMOS tube M17 and the signal terminal DN, the gate of the PMOS tube M14 is connected to the signal terminal UP, and the source of the NMOS tube M13 is connected to the drain of the PMOS tube M14, the source of the PMOS tube M17, the drain of the NMOS tube M18, the non-inverting input terminal of the amplifier OP1, and the non-inverting input terminal of the amplifier OP3. The gate of the NMOS tube M18 is connected to the signal terminal DNB, the drain of the PMOS tube M17 is respectively connected to the source of the NMOS tube M18, the drain of the PMOS tube M15, the source of the NMOS tube M16 and the drain of the NMOS tube M9, the source of the NMOS tube M9 is connected to the drain of the NMOS tube M10, and the source of the NMOS tube M10 is connected to the external ground GND.
3. A charge pump circuit with dynamic calibration according to claim 1, characterized in that: The discharge current compensation circuit (2) comprises: an NMOS tube M23, an NMOS tube M24, a PMOS tube M25, an NMOS tube M26, an NMOS tube M27, a PMOS tube M28, a PMOS tube M29, an NMOS tube M30, a PMOS tube M31, a PMOS tube M32, an amplifier OP3 and an amplifier OP4, wherein the source of the PMOS tube M28 is respectively connected to the source of the PMOS tube M31 and an external power supply VDD, the drain of the PMOS tube M28 is respectively connected to the gate of the PMOS tube M28, the gate of the PMOS tube M31 and the source of the PMOS tube M29, the drain of the PMOS tube M29 is respectively connected to the gate of the PMOS tube M29, the gate of the PMOS tube M32 and the drain of the NMOS tube M30, the gate of the NMOS tube M30 is connected to the signal terminal Vb2, and the NMOS tube M31 is connected to the signal terminal Vb3. The source of M30 is respectively connected to the output end of the amplifier OP4 and the inverting input end of the amplifier OP4, the inverting input end of the amplifier OP3 is respectively connected to the output end of the amplifier OP3 and the source of the PMOS tube M25, the gate of the PMOS tube M25 is connected to the signal terminal Vb1, the drain of the PMOS tube M25 is respectively connected to the drain of the NMOS tube M26, the gate of the NMOS tube M26 and the gate of the NMOS tube M23, the source of the NMOS tube M26 is respectively connected to the drain of the NMOS tube M27, the gate of the NMOS tube M27 and the gate of the NMOS tube M24, the source of the NMOS tube M27 is respectively connected to the source of the NMOS tube M24 and the external ground GND, the drain of the PMOS tube M31 is connected to the source of the PMOS tube M32, and the source of the NMOS tube M23 is connected to the drain of the NMOS tube M24.
4. A charge pump circuit with dynamic calibration according to claim 1, characterized in that: The dynamic calibration circuit (3) comprises: a PMOS tube M1, a PMOS tube M2, a PMOS tube M3, a PMOS tube M4, an NMOS tube M5, an NMOS tube M6, a PMOS tube M19, a PMOS tube M20, an NMOS tube M21, an NMOS tube M22, an amplifier OP2 and a capacitor C0, wherein the source of the PMOS tube M1 is respectively connected to the source of the PMOS tube M3, the source of the PMOS tube M19 and an external power supply VDD, the drain of the PMOS tube M1 is connected to the source of the PMOS tube M2, the drain of the PMOS tube M2 is respectively connected to the gate of the PMOS tube M1, the gate of the PMOS tube M3, the gate of the PMOS tube M2, the gate of the PMOS tube M4, the gate of the PMOS tube M19, the gate of the PMOS tube M20, the gate of the PMOS tube M7, the gate of the PMOS tube M8 and one end of a current source Ib, and the other end of the current source Ib is respectively connected to the NMOS tube M6. The source of the NMOS tube M5 is connected to the source of the NMOS tube M22 and the external ground GND, the drain of the PMOS tube M3 is connected to the source of the PMOS tube M4, the drain of the PMOS tube M4 is respectively connected to the output end of the amplifier OP2, the drain of the NMOS tube M5, the gate of the NMOS tube M5, the gate of the NMOS tube M6, the gate of the NMOS tube M21, the gate of the NMOS tube M22, one end of the capacitor C0, the drain of the PMOS tube M32, the drain of the NMOS tube M23, the gate of the NMOS tube M9 and the gate of the NMOS tube M10, the source of the NMOS tube M5 is connected to the drain of the NMOS tube M6, the drain of the PMOS tube M19 is connected to the source of the PMOS tube M20, the drain of the PMOS tube M20 is respectively connected to the non-inverting input end of the amplifier OP2, the other end of the capacitor C0 and the drain of the NMOS tube M21, and the source of the NMOS tube M21 is connected to the drain of the NMOS tube M22.
5. A charge pump circuit with dynamic calibration according to claim 2, characterized in that: In the charge pump main circuit (1), the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 realizes the charging current source, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 realizes the discharging current source, suppressing the influence of the channel modulation effect on the charging and discharging current, improving the accuracy of the charge pump charging and discharging current, and at the same time, the voltage consumed by the composite MOS tube is lower than the common source and common gate structure, thereby improving the output swing of the charge pump. The NMOS tube M11 and the PMOS tube M12, the NMOS tube M13 and the PMOS tube M14, the PMOS tube M15 and the NMOS tube M16, and the PMOS tube M17 and the NMOS tube M18 respectively constitute complementary switches, and the complementary switches realize simultaneous opening and closing, thereby suppressing the charge sharing effect, clock feedthrough and charge injection effect. An amplifier OP1 with a unit gain negative feedback connection is connected between the drain of the PMOS tube M12 and the drain of the PMOS tube M14 to ensure that the drain of the PMOS tube M12 and the drain of the PMOS tube M14 have the same voltage during the charging and discharging process of the circuit, so that the output voltage of the charge pump has continuity, thereby suppressing the influence of the charge sharing effect on the output voltage of the charge pump and improving the current matching of the circuit. At the same time, the PMOS tube M7, the PMOS tube M1 and the PMOS tube M3 have the same channel width-to-length ratio, the PMOS tube M8, the PMOS tube M2 and the PMOS tube M4 have the same channel width-to-length ratio, the NMOS tube M9 and the NMOS tube M5 have the same channel width-to-length ratio, the NMOS tube M10 and the NMOS tube M6 have the same channel width-to-length ratio, and the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 and the composite MOS tube composed of the PMOS tube M1 and the PMOS tube M2 form a current mirror, and the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10 and the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 form a current mirror, so the charging current I flowing through the composite MOS tube composed of the PMOS tube M7 and the PMOS tube M8 is UP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 DN Yes UP =I DN .
6. The charge pump circuit with dynamic calibration according to claim 3, characterized in that: In the discharge current compensation circuit (2), the amplifier OP3 is connected in a unit gain negative feedback mode, forcing the source voltage of the PMOS tube M25 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of the PMOS tube M25 25 for Among them, μ p is the hole mobility; C ox is the gate oxide capacitance per unit area; (W / L) 25 For PMOS tube M 25 The aspect ratio, V b1 is the voltage of the signal terminal Vb1, V THp is the threshold voltage of the PMOS tube. The channel width-to-length ratio of the NMOS tube M23 is n times that of the NMOS tube M26, the channel width-to-length ratio of the NMOS tube M24 is n times that of the NMOS tube M27, and the current I 23 For I 23 =nI 25 When the charge pump output voltage VCP CP Gradually increases to the external power supply voltage V DD During the process, the composite tube formed by the PMOS tube M7 and the PMOS tube M8 will enter the linear region, so that the charging current I flowing through the composite tube formed by the PMOS tube M7 and the PMOS tube M8 UP At the same time, the charge pump output voltage VCP CP During the gradual increase, V CP -V b1 >|V THp |, the PMOS tube M25 is turned on, and the NMOS tube M30 works in the cut-off region. At this time, the NMOS tube M23 branch extracts a part of the circuit, so that the current I5 flowing through the composite MOS tube composed of the NMOS tube M5 and the NMOS tube M6 is I5=I b -nI 25 , where I b is the current of the current source Ib. The composite MOS transistor composed of NMOS transistors M9 and M10 and the composite MOS transistor composed of NMOS transistors M5 and M6 form a current mirror, so as the charge pump output terminal VCP voltage V CP The discharge current I flowing through the composite MOS tube composed of NMOS tube M9 and NMOS tube M10 gradually increases. DN Also gradually decreases, that is, as the charging current I UP Reduce the discharge current I of the circuit at the same time DN Also reduced, so by optimizing the corresponding parameters can increase the charge pump discharge current I DN With charging current I UP The matching.
7. A charge pump circuit with dynamic calibration according to claim 6, characterized in that: In the discharge current compensation circuit (2), the amplifier OP4 is connected in a unit gain negative feedback mode, forcing the source voltage of the NMOS tube M30 to be equal to the voltage V of the charge pump output terminal VCP. CP , then the current I of NMOS tube M30 30 for Among them, μ n is the electron mobility; (W / L) 30 For NMOS tube M 30 The aspect ratio, V b2 is the voltage of signal terminal Vb2, V THn is the threshold voltage of the NMOS tube. The channel width-to-length ratio of the PMOS tube M32 is m times that of the PMOS tube M29, the channel width-to-length ratio of the PMOS tube M31 is m times that of the PMOS tube M28, and the current I 32 For I 32 =mI 30 When the charge pump output voltage VCP CP In the process of gradually decreasing to the external ground GND, the composite tube composed of NMOS tube M9 and NMOS tube M10 will enter the linear region, and the discharge current I flowing through the composite tube composed of NMOS tube M9 and NMOS tube M10 DN At the same time, the charge pump output voltage VCP CP Gradually reduce the process and V b2 -V CP >V THn , NMOS tube M30 is turned on, PMOS tube M25 works in the cut-off region, and the current of PMOS tube M32 is injected into NMOS tube M5. At this time, the current flowing through NMOS tube M5 increases, so that the current I5 flowing through the composite MOS tube composed of NMOS tube M5 and NMOS tube M6 is I5=I b +I 32 =I b +mI 30 , where I b is the current of the current source Ib. The composite MOS tube composed of NMOS tubes M9 and M10 and the composite MOS tube composed of NMOS tubes M5 and M6 form a current mirror. At the same time, as the charge pump output terminal VCP voltage V CP The current of the PMOS tube M32 is injected into the NMOS tube M5, thereby suppressing the discharge current I flowing through the composite MOS tube composed of the NMOS tube M9 and the NMOS tube M10. DN Reduce, thereby increasing the circuit's discharge current I DN With charging current I UP At the same time, when the charge pump output voltage V CP Close to V DD / 2, there is V CP -V b1 <|V THp | and V b2 -V CP <V THn , the PMOS tube M25 is turned off, and the NMOS tube M30 is turned off. At this time, the discharge current compensation circuit does not work, so the discharge current I DN With charging current I UP For I DN =I UP =I b , where V b1 is the voltage of the signal terminal Vb1, V b2 is the voltage of signal terminal Vb2, V THp is the threshold voltage of the PMOS tube, V THn is the threshold voltage of the NMOS tube, I b is the current of current source Ib.
8. The charge pump circuit with dynamic calibration according to claim 4, characterized in that: In the dynamic calibration circuit (3), the amplifier OP2 forces the drain voltage of the NMOS tube M21 to be equal to the voltage V of the charge pump output terminal VCP. CP The negative feedback system is formed by amplifier OP2, NMOS tube M5, NMOS tube M21 to realize dynamic feedback calibration, so that the charge pump output voltage V CP When the current of the PMOS tube M4 changes, the dynamic feedback calibration technology is used to make the current of the PMOS tube M4 equal to the current of the NMOS tube M5, and the composite MOS tube composed of the PMOS tubes M7 and M8 and the composite MOS tube composed of the PMOS tubes M1 and M2 form a current mirror, and the composite MOS tube composed of the NMOS tubes M9 and M10 and the composite MOS tubes composed of the NMOS tubes M5 and M6 form a current mirror, so that the charging current and the discharging current of the charge pump match. That is, when the charge pump output voltage V CP When the charge pump output voltage V increases, the output of the amplifier OP2 decreases, the current of the PMOS tube M4 is greater than the current of the NMOS tube M5, so that part of the current flowing through the PMOS tube M4 flows from the output end of the amplifier OP2 into the amplifier OP2, and the gate voltages of the NMOS tubes M21 and M22 decrease, so that the voltage at the same-direction input end of the amplifier OP2 increases, thereby restoring the voltage at the output end of the amplifier OP2 to a normal value, so that the current flowing through the PMOS tube M4 is equal to the current flowing through the NMOS tube M5; similarly, when the charge pump output voltage V CP When the voltage decreases, the output voltage of the amplifier OP2 increases, the current of the PMOS tube M4 is less than the current of the NMOS tube M5, a part of the current flows out of the output end of the amplifier OP2 and is injected into the NMOS tube M5, the gate voltages of the NMOS tubes M21 and M22 rise and reduce the voltage of the same-direction input end of the amplifier OP2, thereby restoring the voltage of the output end of the amplifier OP2 to a normal value, making the current flowing through the PMOS tube M4 equal to the current flowing through the NMOS tube M5, thereby realizing the dynamic calibration of the circuit and increasing the charge pump discharge current I DN With charging current I UP The matching.