Method for producing electronic device and electronic device
By setting capsules surrounded by supercooled metal liquid between the electronic semiconductor chip and the carrier, the problem of high short circuit risk in electrical contact of electronic semiconductor chips in the prior art is solved, and electronic device manufacturing under low cost and low temperature conditions is realized.
Patent Information
- Application Number
- CN202380067628.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-09-23
- Filing Date
- 2023-09-12
- Publication Date
- 2025-04-29
AI Technical Summary
In the prior art, when manufacturing electronic devices, it is difficult to effectively solve the problem of high short circuit risk in electrical contacts of small transverse size electronic semiconductor chips.
By providing capsules between the contact side of the electronic semiconductor chip and the mating contact surface of the carrier, the capsule has a strong shell surrounding the supercooled metal liquid and cracking the shell of the capsule when pressing the chip, the metal liquid wets the contact surface and the mating contact surface to establish a conductive connection.
This method reduces silver migration and short circuit risks without the need for fine structured connecting materials and solders, enabling the manufacturing of electronic devices at low cost and low temperature conditions.
Smart Images
Figure CN119908032A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a method for manufacturing an electronic component and an electronic component.
[0002] This application claims the priority of German patent application 10 2022 124 574.8, the disclosure content of which is incorporated herein by reference. Background Art
[0003] Various methods are known in the prior art for making electrical contact with electronic semiconductor chips having small lateral dimensions. Many of these methods require prior microstructuring of the contact material used and are associated with a high risk of short circuits. Summary of the invention
[0004] The object of the present invention is to provide a method for producing an electronic component. Another object of the present invention is to provide an electronic component. The objects are achieved by a method and a device having the features of the independent claims. Different improvements are described in the dependent claims.
[0005] The method for manufacturing an electronic device comprises the following steps: providing an electronic semiconductor chip, wherein a first contact surface and a second contact surface are formed at a contact side of the electronic semiconductor chip, wherein the first contact surface and the second contact surface protrude at a first height beyond a section of the contact side located between the first contact surface and the second contact surface; providing a carrier, wherein a first mating contact surface and a second mating contact surface are formed at an upper side of the carrier, wherein the first mating contact surface and the second mating contact surface protrude at a second height beyond a section of the upper side of the carrier located between the first mating contact surface and the second mating contact surface, wherein the first height is greater than or equal to zero and the second height is greater than, less than or equal to zero, wherein a total height formed as the sum of the first height and the second height is greater than zero; arranging capsules on the mating contact surfaces, wherein the capsules each have a solid outer shell that surrounds a supercooled metal liquid, wherein the capsules each have a diameter that is smaller than the total height; and pressing the electronic semiconductor chip onto the carrier so that the contact surface of the electronic semiconductor chip is pressed onto the mating contact surface of the carrier, wherein the outer shell of the capsule arranged between the contact surface and the mating contact surface is cracked and the metal liquid wets the contact surface and the mating contact surface.
[0006] The method does not require fine structuring of the connection material for connecting the contact surface of the electronic semiconductor chip to the mating contact surface of the carrier. As a result, the method can be advantageously carried out simply and cost-effectively. The method also does not require the use of silver to produce the conductive connection between the electronic semiconductor chip and the carrier, which advantageously reduces the risk of silver migration and the attendant risk of short circuits. The method also does not require the application of solder to the contact surface of the electronic semiconductor chip beforehand, which likewise contributes to the simple and cost-effective implementation of the method. In addition, the method can be carried out at low temperatures, which in particular allows the use of cost-effective carrier materials, such as PET.
[0007] In one embodiment of the method, the capsule is also arranged on a section of the upper side of the carrier next to the mating contact surface. This makes it possible to apply the capsule by means of a method with low positioning accuracy, whereby the method can be performed simply and cost-effectively.
[0008] In one embodiment of the method, after pressing the electronic semiconductor chip, a further step is performed to remove at least a portion of the capsule arranged next to the mating contact surface. Advantageously, this prevents the capsule arranged next to the mating contact surface from cracking, for example due to thermal effects, at a point in time after the electronic semiconductor chip has been pressed onto the carrier and causing an electrical short circuit.
[0009] In one embodiment of the method, the capsule is removed by blowing, by etching or by means of an adhesive film using a solvent. Advantageously, the variants can each enable at least a portion of the capsule disposed next to the mating contact surface to be removed efficiently, carefully and cost-effectively.
[0010] In one embodiment of the method, the capsule is arranged using a shadow mask. Advantageously, this allows the capsule to be applied simply and cost-effectively, wherein the position of the capsule can be limited to a desired region of the upper side of the carrier.
[0011] In one embodiment of the method, the capsule is arranged by a spraying method. Advantageously, this makes it possible to apply the capsule quickly and cost-effectively.
[0012] In one embodiment of the method, the capsules are arranged on the mating contact surface together with a solvent. The solvent is vaporized before the electronic semiconductor chip is pressed. Advantageously, the capsules dispersed in the solvent can be applied particularly well by means of a spraying method.
[0013] In one embodiment of the method, the capsule is provided by a printing method. Advantageously, the printing method also enables the capsule to be applied to the upper side of the carrier in a cost-effective manner.
[0014] In one embodiment of the method, the capsules are arranged in a manner embedded in a matrix material on the mating contact surface. Advantageously, the capsules embedded in the matrix material can be arranged particularly simply on the mating contact surface of the carrier. The matrix material can be, for example, an organic material or have an acrylic resin, an epoxy resin or a silicone resin.
[0015] In one embodiment of the method, after pressing the electronic semiconductor chip, the matrix material is removed, in particular by means of a solvent. Advantageously, when removing the matrix material, the capsule arranged next to the mating contact surface can also be removed.
[0016] In one embodiment of the method, the matrix material is hardened after the electronic semiconductor chip is pressed. The matrix material can then remain at the electronic device obtainable by the method. The hardened matrix material can protect the capsules remaining in the matrix material and isolate the capsules from each other, so that after the electronic semiconductor chip is pressed onto the carrier, the capsules remaining in the matrix material also do not cause undesired short circuits.
[0017] In one embodiment of the method, after pressing the electronic semiconductor chip, the matrix material contacts a section of the contact side of the electronic semiconductor chip between the first contact surface and the second contact surface and a section of the upper side of the carrier between the first mating contact surface and the second mating contact surface. The hardened matrix material can thus form an underfill of the electronic semiconductor chip, which additionally fixes it mechanically at the carrier. The underfill can also protect the electrically conductive connection between the electronic semiconductor chip and the carrier from external influences.
[0018] In one embodiment of the method, the spacing between the first contact surface and the second contact surface is less than 50 μm, in particular less than 20 μm. Advantageously, despite this only small spacing between the contact surfaces of the electronic semiconductor chip, the method still allows reliable electrical contacting without the risk of a short circuit between the first contact surface and the second contact surface.
[0019] In one embodiment of the method, the diameter of the capsules is between 0.2 μm and 10 μm, in particular between 0.5 μm and 5 μm. Advantageously, the capsules are thus suitable for producing an electrically conductive connection between the contact surface of the electronic semiconductor chip and the mating contact surface of the carrier, even in the case of very small electronic semiconductor chips with very small contact surfaces and at very small pitches.
[0020] In one embodiment of the method, the diameter of the capsule is between 0.5 μm and 3 μm smaller than the overall height. Advantageously, the method thus enables the production of electronic components with very compact outer dimensions, in particular with a small height.
[0021] In one embodiment of the method, the shell of the capsule comprises an oxide, in particular tin oxide (SnOx). Advantageously, the shell of the capsule thus has suitable mechanical properties.
[0022] In one embodiment of the method, the supercooled metallic liquid comprises Sn, SnAgCu or SnBi. Advantageously, the supercooled metallic liquid is therefore suitable for producing an electrically conductive connection between a contact area of an electronic semiconductor chip and a mating contact area of a carrier.
[0023] In one embodiment of the method, the electronic semiconductor chip is an optoelectronic semiconductor chip, in particular a light emitting diode chip. The method is therefore suitable for producing optoelectronic components, such as light emitting diode components. Advantageously, optoelectronic semiconductor chips with very small dimensions can be used here.
[0024] The electronic device has an electronic semiconductor chip and a carrier. A first contact surface and a second contact surface are formed at the contact side of the electronic semiconductor chip. The first contact surface and the second contact surface protrude beyond the section of the contact side between the first contact surface and the second contact surface at a first height. A first mating contact surface and a second mating contact surface are formed at the upper side of the carrier. The first mating contact surface and the second mating contact surface protrude beyond the section of the upper side of the carrier between the first mating contact surface and the second mating contact surface at a second height. The first height is greater than or equal to zero. The second height is greater than, less than or equal to zero. The total height formed as the sum of the first height and the second height is greater than zero. The first contact surface and the second contact surface are connected to the first mating contact surface and the second mating contact surface via a solder connection. Capsules are provided on the section of the upper side of the carrier between the first mating contact surface and the second mating contact surface, and the capsules each have a sturdy shell, which surrounds the supercooled metal liquid. The capsules each have a diameter less than the total height.
[0025] Advantageously, the electronic component can be produced simply and cost-effectively. The solder connection can be designed without silver, whereby the risk of silver migration and the attendant risk of short circuits can advantageously be reduced. The carrier can comprise a cost-effective carrier material, for example PET.
[0026] In one embodiment of the electronic device, the capsules are embedded in a matrix material. The matrix material can protect the capsules embedded in the matrix material and insulate them from one another, so that the capsules advantageously do not cause undesired short circuits. The matrix material can also form an underfill for the electronic semiconductor chip, additionally mechanically fix it on the carrier and protect the solder connection between the electronic semiconductor chip and the carrier from external influences. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The characteristics, features and advantages of the present invention described above and the ways and methods of achieving these characteristics, features and advantages become clearer and more clearly understood in conjunction with the following description of the embodiments, which are described in detail in conjunction with the accompanying drawings. Herein, they are respectively shown in schematic diagrams:
[0028] Figure 1 shows a cross-sectional side view of an electronic semiconductor chip;
[0029] Figure 2 showing a cross-sectional side view of the carrier;
[0030] Figure 3 A top view showing the mating contact surface at the upper side of the carrier;
[0031] Figure 4 showing a total height formed as the sum of the first height and the second height;
[0032] Figure 5 A shadow mask for applying the capsule is shown;
[0033] Figure 6 showing a side view of a carrier with a capsule applied to a mating contact surface;
[0034] Figure 7 A top view of the upper side of the carrier with the capsule applied thereon is shown;
[0035] Figure 8 A cross-sectional view showing one of the capsules;
[0036] Fig. 9 A cross-sectional side view showing a carrier with an electronic semiconductor chip pressed onto it;
[0037] Fig.10 A cross-sectional detail view showing the contact surface and the mating contact surface during pressing of the electronic semiconductor chip;
[0038] Fig.11 A further detail view showing the contact surface and the mating contact surface during pressing of the electronic semiconductor chip;
[0039] Fig.12 showing the capsules embedded in a solvent; and
[0040] Fig.13 Shown are a carrier, an electronic semiconductor chip and capsules embedded in a matrix material. DETAILED DESCRIPTION
[0041] Figure 1The schematic sectional side view shows an electronic semiconductor chip 100. The electronic semiconductor chip 100 may be, for example, an optoelectronic semiconductor chip, in particular, for example, a light emitting diode chip (LED chip). However, the electronic semiconductor chip 100 may also be any other electronic semiconductor chip.
[0042] The electronic semiconductor chip 100 has a front side 101 and a contact side 102 lying opposite the front side 101. If the electronic semiconductor chip 100 is designed as an optoelectronic semiconductor chip, the front side 101 forms, for example, a light-emitting side of the electronic semiconductor chip 100. In the case of a different design of the electronic semiconductor chip 100, the front side 101 may have other functional properties or may have no functional properties at all.
[0043] A first contact surface 110 and a second contact surface 120 are formed on the contact side 102 of the electronic semiconductor chip 100. The first contact surface 110 and the second contact surface 120 are provided for making electrical contact with the electronic semiconductor chip 100, for example, in order to apply voltage and current to the electronic semiconductor chip 100. The contact surfaces 110, 120 can be formed, for example, as a layer sequence of different metallic materials.
[0044] The first contact area 110 and the second contact area 120 have a spacing 140 from one another measured in a lateral direction. The spacing 140 may also be small in the case of small electronic semiconductor chips 100. The spacing 140 may be, for example, less than 50 μm or even less than 20 μm.
[0045] The first contact surface 110 and the second contact surface 120 each protrude by a first height 130 beyond the section 103 of the contact side 102 of the electronic semiconductor chip 100 located between the first contact surface 110 and the second contact surface 120. The first height 130 is measured perpendicularly to the contact side 102. The first height 130 can be in the range of several μm and, for example, up to 10 μm. However, the first height 130 can also be a smaller value up to less than 1 μm. In an extreme case, the first height 130 can even be equal to zero. In this case, the first contact surface 110 and the second contact surface 120 do not protrude at all beyond the section 103 of the contact side 102 located between the contact surfaces 110, 120, but are flush with the contact side 102 of the electronic semiconductor chip 100.
[0046] The electronic semiconductor chip 100 may have further contact areas in addition to the first contact area 110 and the second contact area 120 .
[0047] Figure 2 A schematic sectional side view of a carrier 200 is shown. The carrier 200 can also be referred to as a substrate. The carrier 200 can include a plastic material, in particular PET, for example.
[0048] The carrier 200 has an upper side 201 which is Figure 3 2 is shown in a top view. A first mating contact surface 210 and a second mating contact surface 220 are formed on the upper side 201 of the carrier 200. The first mating contact surface 210 is conductively connected to a first printed conductor 215 arranged on the upper side 201. The second mating contact surface 220 is conductively connected to a second printed conductor 225 formed on the upper side 201. The first mating contact surface 210 and the second mating contact surface 220 can be formed, for example, as a stack of layers of different metal materials.
[0049] The first mating contact surface 210 and the second mating contact surface 220 protrude by a second height 230 beyond a section 203 of the top side 201 of the carrier 200 located between the first mating contact surface 210 and the second mating contact surface 220 . The second height 230 is measured perpendicularly to the top side 201 of the carrier 200 .
[0050] The second height 230 can be, for example, a few μm, for example up to 10 μm. However, the second height 230 can also have smaller values, for example values less than 1 μm. The first mating contact surface 210 and the second mating contact surface 220 can even be sunken in the upper side 201 of the carrier 200, so that the second height 230 is equal to zero or even has a value less than zero. In the last-mentioned case, the section 203 of the upper side 201 of the carrier 200 located between the first mating contact surface 210 and the second mating contact surface 220 protrudes beyond the first mating contact surface 210 and the second mating contact surface 220.
[0051] The first and second conductor tracks 215, 225 may have a height relative to the top 201 of the carrier 200 which corresponds to the second height 230 of the first and second mating contact surfaces 210, 220. However, the conductor tracks 215, 225 may also have a smaller or greater height.
[0052] The carrier 200 may also have further mating contact surfaces in addition to the first mating contact surface 210 and the second mating contact surface 220 .
[0053] The total height 300 can be formed by adding the first height 130 of the contact surfaces 110 , 120 of the electronic semiconductor chip 100 and the second height 230 of the mating contact surfaces 210 , 220 of the carrier 200 . Figure 4 The total height 300 corresponds to the sum of the first height 130 and the second height 230. This applies not only to Figure 4 , ie, the first height 130 and the second height 230 each have a positive value, but also applies to the case where the first height 130 or the second height 230 has a value of zero or the second height 230 has a negative value.
[0054] Figure 5 A schematic diagram of the top side 201 of the carrier 200 is shown together with a shadow mask 500 arranged above the top side 201. The shadow mask 500 has an opening 510, which is arranged above the first mating contact surface 210 and the second mating contact surface 220. In the example shown, the opening 510 is dimensioned such that, in addition to the first mating contact surface 210 and the second mating contact surface 220 and the section 203 of the top side 201 of the carrier 200 between the mating contact surfaces 210, 220, parts of the conductor tracks 215, 225 and other sections 204 of the top side 201 of the carrier 200 are also visible and accessible through the opening 510.
[0055] However, the opening 510 of the shadow mask 500 can also be dimensioned small, for example, so that only the first mating contact surface 210, the second mating contact surface 220 and the section 203 of the upper side 201 of the carrier 200 between the mating contact surfaces 210, 220 are exposed. Alternatively, the opening 510 of the shadow mask 500 can also be larger. The use of a shadow mask 500 with a larger opening 510 offers the advantage that the shadow mask 500 only has to be positioned with a small precision in order to arrange the opening 510 above the first mating contact surface 210 and the second mating contact surface 220. The shadow mask 500 can also be completely omitted, as will be explained below.
[0056] Figure 6 A schematic sectional side view of the carrier 200 is shown in a processing state which follows chronologically from the preceding illustration. Figure 7 The upper side 201 of the carrier 200 is shown in FIG. Figure 6 . A top view of the processing state is shown in FIG.
[0057] The capsule 400 is arranged on the mating contact surfaces 210, 220 at the upper side 201 of the carrier 200. Figure 5In the case of the shadow mask 500 shown in FIG. 5 , the capsule 400 is provided. In this case, the capsule 400 is provided in the entire region exposed by the opening 510 of the shadow mask 500. As a result, the capsule 400 is provided not only on the first mating contact surface 210 and the second mating contact surface 220, but also on the section 203 of the upper side 201 of the carrier 200 located between the mating contact surfaces 210, 220, on parts of the conductor tracks 215, 225 and on other sections 204 of the upper side 201 of the carrier 200. By using a shadow mask 500 with smaller openings 510, the capsule 400 can however also be limited to the first mating contact surface 210, the second mating contact surface 220 and the section 203 of the upper side 201 of the carrier 200 located between the mating contact surfaces 210, 220. If the shadow mask 500 is completely omitted, the capsule 400 would be provided on the entire upper side 201 of the carrier 200. It is only mandatory that the capsule 400 is arranged on the mating contact surfaces 210 , 220 .
[0058] Capsules 400 are all constructed substantially identically. Figure 8 A schematic cross-sectional view of a capsule 400 is shown. Each capsule 400 has a solid housing 410, which surrounds a supercooled metal liquid 420. The solid housing 410 can here, for example, include an oxide, such as tin oxide (SnOx, SnO, Sn2O3, SnO2). The supercooled metal liquid 420 can, for example, include tin or a tin compound, such as, in particular, Sn, SnAgCu or SnBi.
[0059] The capsules 400 each have a diameter 430. The diameter 430 is smaller than the total height 300, that is, smaller than the sum of the first height 130 and the second height 230. The diameter 430 of the capsule 400 is preferably between 0.5 μm and 3 μm smaller than the total height 300. The diameter 430 of the capsule 400 can be, for example, between 0.2 μm and 10 μm, in particular, for example, between 0.5 μm and 5 μm.
[0060] Fig. 9 A schematic sectional side view of an electronic semiconductor chip 100 and a carrier 200 is shown in a processing state which chronologically follows the preceding illustration.
[0061] In time Fig. 9 In a processing step prior to the illustration of FIG. 1 , the electronic semiconductor chip 100 is pressed onto the carrier 200 so that the first contact surface 110 of the electronic semiconductor chip 100 has been pressed onto the first mating contact surface 210 of the carrier 200 and the second contact surface 120 of the electronic semiconductor chip 100 has been pressed onto the second mating contact surface 220 of the carrier 200. The processing steps are schematically shown in FIG. Fig.10, which shows an enlarged sectional side view of a portion of the second contact surface 120 of the electronic semiconductor chip 100 and a portion of the second mating contact surface 220 of the carrier 200. By pressing the electronic semiconductor chip 100 onto the carrier 200, the capsule 400 previously arranged on the mating contact surfaces 210, 220 is squeezed between the mating contact surfaces 210, 220 and the contact surfaces 110, 120 and deformed until the shell 410 of the capsule 400 arranged between the contact surfaces 110, 120 and the mating contact surfaces 210, 220 is finally broken. Subsequently, the supercooled metal liquid 420 contained in the capsule 400 flows out and wets the contact surfaces 110, 120 of the electronic semiconductor chip 100 and the mating contact surfaces 210, 220 of the carrier 200. For this purpose, the electronic semiconductor chip 100 can be pressed onto the carrier 200, for example, at a pressure between 0.1 MPa and 10 MPa.
[0062] The supercooled metal liquid 420 flowing out of the ruptured capsule 400 solidifies rapidly after wetting the contact surfaces 110, 120 and the mating contact surfaces 210, 220 and forms solder joints 450 between the first contact surface 110 and the first mating contact surface 210 and between the second contact surface 120 and the second mating contact surface 220. Fig. 9 Neutral Fig.11 An enlarged detail view is shown.
[0063] The number of capsules 400 applied per unit area to the upper side 201 of the carrier 200 during arrangement of the capsules 400 on the mating contact surfaces 210, 220 of the carrier 200 can be selected to be as high as possible, so that the resulting solder connection 450 has good electrical and thermal conductivity. At the same time, the number of capsules 400 per unit area should be selected to be sufficiently low, whereby the solder connection 450 transmits thermomechanical stresses in the smallest possible amount and only a small risk of forming an electrical short circuit occurs during pressing of the electronic semiconductor chip 100 onto the carrier 200.
[0064] As in Fig. 9 and Fig.11As can be seen in the figure, during the pressing of the electronic semiconductor chip 100 onto the carrier 200, the capsule 400 arranged on the section 203 of the upper side 201 of the carrier 200 between the first mating contact surface 210 and the second mating contact surface 220 does not open. This is ensured in particular by the fact that the diameter 430 of the capsule 400 is smaller than the overall height 300. This prevents an undesired short circuit between the first mating contact surface 210 and the second mating contact surface 220 of the carrier 200 or between the first contact surface 110 and the second contact surface 120 of the electronic semiconductor chip 100. The capsule 400 arranged on the conductor tracks 215, 225 and other sections 204 of the upper side 201 of the carrier 200 remain intact.
[0065] exist Fig. 9 In the processing state shown in FIG. 1 , the carrier 200 together with the electronic semiconductor chip 100 arranged thereon can form an electronic device 10, the processing of which is completed. If the electronic semiconductor chip 100 is an optoelectronic semiconductor chip, the electronic device 10 is an optoelectronic device. However, it is also possible to Fig. 9 Starting from the processing state shown in , further processing steps are carried out.
[0066] exist Fig. 9 The processing state shown in FIG. 1 may optionally be followed by a process step for removing at least a portion of the capsules 400 arranged next to the mating contact surfaces 210, 220. In this case, some or all of the capsules 400 arranged on the upper side 210 of the carrier 200 that were not broken apart during the pressing of the electronic semiconductor chip 100 are removed. By removing the capsules 400, it is prevented that these capsules 400 break apart at a later point in time, which could cause the supercooled metal liquid 420 contained in the capsules 400 to cause a short circuit. The subsequent breaking apart of the capsules 400 can be caused, for example, by mechanical loads or by thermal effects.
[0067] For example, at least a portion of the capsule 400 arranged next to the mating contact surfaces 210, 220 is removed by blowing, by an etching method or by means of an adhesive film using a solvent. It is advantageous to also remove as much as possible of the capsule 400 on the section 203 of the upper side 201 of the carrier 200 arranged between the mating contact surfaces 210, 220 when removing the capsule 400, because the capsule 400 arranged there can cause a short circuit particularly easily.
[0068] The capsule 400 is placed on the mating contact surfaces 210 and 220 of the carrier 200 according to Figure 6 and Figure 7 The described arrangement can be carried out, for example, by a spraying method. Optionally, a method according to Figure 5The shadow mask 500 is shown. For spraying onto the upper side 201 of the carrier 200, the capsules 400 can be dispersed in a solvent 600, which is sprayed together with the capsules 400. This is schematically shown in Fig.12 , where a part of the first mating contact surface 210 of the carrier 200 is shown together with some capsules 400 arranged thereon. Before the electronic semiconductor chip 100 is pressed onto the carrier 200, the solvent 600 can be vaporized after the capsules 400 are sprayed.
[0069] Alternatively, the capsule 400 may be Figure 6 and Figure 7 The described settings can be carried out by means of a printing method. Figure 5 A shadow mask 500 is depicted. The shadow mask in this case is a printing screen or a printing stencil.
[0070] In order to arrange the capsule 400 by means of a printing method, the capsule 400 can be embedded in a matrix material 700. The matrix material is Fig.13 , in which a carrier 200 and the electronic semiconductor chip 100 are schematically shown after pressing the electronic semiconductor chip 100 .
[0071] The matrix material 700 applied by printing together with the capsules 400 can be removed in a variant of the method after pressing the electronic semiconductor chip 100, for example by means of a solvent. In this case, the matrix material 700 can, for example, include an organic material, such as palmitic acid or n-decanol. During the removal of the matrix material 700, the capsules 400 embedded in the matrix material 700 and not broken apart during the pressing of the electronic semiconductor chip 100 can also be removed.
[0072] An alternative possibility is that the matrix material 700 hardens after or during the pressing of the electronic semiconductor chip 100. In this case, the matrix material 700 can include, for example, an acrylic resin, an epoxy resin or a silicone resin. The matrix material 700 can be hardened, for example, by heat input or by irradiation with light. The hardened matrix material 700 then remains on the electronic component 10, such as in Fig.13 As shown in .
[0073] The hardened matrix material 700 can fix the capsule 400 embedded in the matrix material 700 and not broken apart during the pressing of the electronic semiconductor chip 100 , so that subsequent breaking apart of the capsule 400 or at least short circuits due to the metallic liquid 420 flowing out of the capsule 400 are prevented.
[0074] The hardened matrix material 700 can also fulfill the function of an underfill. In this case, it is expedient that after pressing the electronic semiconductor chip 100, the matrix material 700 touches the section 103 of the contact side 102 of the electronic semiconductor chip 100 between the first contact surface 110 and the second contact surface 120 and the section 203 of the upper side 201 of the carrier 200 between the first mating contact surface 210 and the second mating contact surface 220. In this case, the matrix material 700 fills the space between the contact surfaces 110, 120, the contact side 102 of the electronic semiconductor chip 100, the mating contact surfaces 210, 220 and the upper side 201 of the carrier 200 as completely as possible. The matrix material 700 then brings about an additional mechanical fixation of the electronic semiconductor chip 100 on the carrier 200, can prevent ion migration and protect the electrical connection between the contact surfaces 110, 120 and the mating contact surfaces 210, 220 from external influences caused by moisture, acids and corrosive gases.
[0075] The present invention is illustrated and described in detail according to the preferred embodiments. However, the present invention is not limited to the disclosed examples. Other variations can be derived by those skilled in the art.
[0076] Reference numerals list
[0077] 10 Electronic devices
[0078] 100 Electronic semiconductor chips
[0079] 101 front
[0080] 102 Contact side
[0081] 103 The middle section
[0082] 110 First contact surface
[0083] 120 Second contact surface
[0084] 130 First Height
[0085] 140 Spacing
[0086] 200 Carriers
[0087] 201 upper side
[0088] 203 The middle section
[0089] 204 Other sections
[0090] 210 First mating contact surface
[0091] 215 First printed conductor
[0092] 220 Second mating contact surface
[0093] 225 Second printed conductor
[0094] 230 Second Height
[0095] 300 Total height
[0096] 400 capsules
[0097] 410 Housing
[0098] 420 Liquid
[0099] 430 Diameter
[0100] 450 Solder connection
[0101] 500 Shadow Mask
[0102] 510 Opening
[0103] 600 Solvent
[0104] 700 Matrix material
Claims
1. A method for manufacturing an electronic device (10), the method comprising the following steps: - providing an electronic semiconductor chip (100), wherein a first contact surface (110) and a second contact surface (120) are formed on the contact side (102) of the electronic semiconductor chip (100), wherein the first contact surface (110) and the second contact surface (120) protrude by a first height (130) beyond a section (103) of the contact side (102) located between the first contact surface (110) and the second contact surface (120); - providing a carrier (200), A first mating contact surface (210) and a second mating contact surface (220) are formed on the upper side (201) of the carrier (200), wherein the first mating contact surface (210) and the second mating contact surface (220) protrude by a second height (230) beyond a section (203) of the upper side (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220), wherein the first height (130) is greater than or equal to zero, and the second height (230) is greater than, less than or equal to zero, wherein a total height (300) formed as a sum of the first height (130) and the second height (230) is greater than zero; - placing the capsule (400) on the mating contact surfaces (210, 220), The capsules (400) each have a solid shell (410) which surrounds the supercooled metal liquid (420). wherein the capsules (400) each have a diameter (430) smaller than the overall height (300); - pressing the electronic semiconductor chip (100) onto the carrier (200) such that the contact surfaces (110, 120) of the electronic semiconductor chip (100) are pressed onto the mating contact surfaces (210, 220) of the carrier (200), The shell (410) of the capsule (400) disposed between the contact surface (110, 120) and the matching contact surface (210, 220) is broken, and the metal liquid (420) wets the contact surface (110, 120) and the matching contact surface (210, 220).
2. The method according to claim 1, A capsule (400) is arranged on a section (204) of the upper side (201) of the carrier (200) next to the mating contact surfaces (210, 220).
3. The method according to claim 2, After pressing the electronic semiconductor chip (100), the following further steps are performed: - removing at least a portion of the capsule (400) arranged beside the mating contact surface (210, 220).
4. The method according to claim 3, In this case, the removal is carried out by blowing using solvents, by etching methods or with the aid of adhesive films.
5. The method according to any one of the preceding claims, The capsule (400) is arranged using a shadow mask (500).
6. The method according to any one of the preceding claims, The capsule (400) is arranged by a spraying method.
7. The method according to any one of the preceding claims, The capsule (400) and the solvent (600) are arranged together on the matching contact surface (210, 220), The solvent (600) is vaporized before pressing the electronic semiconductor chip (100).
8. The method according to any one of claims 1 to 5, The capsule (400) is arranged by a printing method.
9. The method according to any one of the preceding claims, The capsule (400) is arranged in a manner of being embedded in a matrix material (700) on the mating contact surface (210, 220).
10. The method according to claim 9, Therein, after pressing the electronic semiconductor chip (100), the matrix material (700) is removed, in particular by means of a solvent.
11. The method according to claim 9, Therein, after pressing the electronic semiconductor chip (100), the matrix material (700) is cured.
12. The method according to claim 11, After pressing the electronic semiconductor chip (100), the matrix material (700) touches a section (103) of the contact side (102) of the electronic semiconductor chip (100) located between the first contact surface (110) and the second contact surface (120) and a section (203) of the upper side (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220).
13. The method according to any one of the preceding claims, In this case, a distance (140) between the first contact surface (110) and the second contact surface (120) is less than 50 μm, in particular less than 20 μm.
14. The method according to any one of the preceding claims, The diameter (430) of the capsule (400) is between 0.2 μm and 10 μm, in particular between 0.5 μm and 5 μm.
15. The method according to any one of the preceding claims, The diameter (430) of the capsule (400) is between 0.5 μm and 3 μm smaller than the overall height (300).
16. A method according to any one of the preceding claims, The shell (410) of the capsule (400) comprises an oxide, in particular tin oxide.
17. A method according to any one of the preceding claims, The supercooled metal liquid (420) comprises Sn, SnAgCu or SnBi.
18. A method according to any one of the preceding claims, The electronic semiconductor chip (100) is an optoelectronic semiconductor chip, in particular a light emitting diode chip.
19. An electronic device (10), the electronic device Having an electronic semiconductor chip (100) and a carrier (200), wherein a first contact surface (110) and a second contact surface (120) are formed on the contact side (102) of the electronic semiconductor chip (100), wherein the first contact surface (110) and the second contact surface (120) protrude by a first height (130) beyond a section (103) of the contact side (102) located between the first contact surface (110) and the second contact surface (120), A first mating contact surface (210) and a second mating contact surface (220) are formed on the upper side (201) of the carrier (200), wherein the first mating contact surface (210) and the second mating contact surface (220) protrude by a second height (230) beyond a section (203) of the upper side (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220), wherein the first height (130) is greater than or equal to zero, and the second height (230) is greater than, less than or equal to zero, wherein a total height (300) formed as a sum of the first height (130) and the second height (230) is greater than zero, The first contact surface (110) and the second contact surface (120) are connected to the first mating contact surface (210) and the second mating contact surface (220) via a solder connection portion (450), A capsule (400) is arranged on a section (203) of the upper side (201) of the carrier (200) between the first mating contact surface (210) and the second mating contact surface (220), wherein each capsule has a solid outer shell (410) which surrounds the supercooled metal liquid (420). The capsules (400) each have a diameter (430) that is smaller than the overall height (300).
20. The electronic device (10) according to claim 19, The capsule (400) is embedded in a matrix material (700).