Semiconductor process equipment and source bottle device thereof

Abstract

The invention provides semiconductor process equipment and a source bottle device thereof. The source bottle device comprises a bottle body, a partition plate located in the bottle body and an automatic liquid supplementing mechanism. The partition plate extends from the bottom to the top of the bottle body to divide the interior of the bottle body into a first cavity and a second cavity; the first cavity is provided with a gas inlet and a gas outlet, the gas inlet is used for introducing carrier gas, the gas outlet is used for being connected with a process chamber of semiconductor process equipment so as to output the carrier gas carrying a gaseous source to the process chamber, and the second cavity is used for storing a liquid source; a liquid supplementing hole is formed in the position, away from the bottom of the bottle body by a preset distance, of the partition plate and communicates with the first cavity and the second cavity. The automatic liquid supplementing mechanism can automatically supplement liquid according to the liquid level of the liquid source in the first cavity, so that the liquid source in the first cavity is always kept near the preset liquid level. Therefore, the space occupied by the gaseous source in the first cavity is kept unchanged, the quantity of the gaseous source carried by the carrier gas is kept stable, and the uniformity of the thickness of a thin film grown on the surface of a wafer is further improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and a source bottle device thereof. Background Art

[0002] Metal-organic Chemical Vapor Deposition (MOCVD) is a technology for preparing compound semiconductor thin-film single crystals. It uses thermal decomposition reaction to perform vapor deposition on the surface of the wafer to grow thin-layer single crystal materials of various compound semiconductors and their multi-component solid solutions. During the MOCVD process, liquid metal organic compounds are stored in a source bottle as the source (precursor) of the chemical vapor deposition (CVD) reaction. In addition to the liquid source, the rest of the space in the source bottle is in a low-pressure state, and a certain amount of gaseous source will evaporate from the surface of the liquid source. An inert gas with a certain flow rate and pressure is introduced into the source bottle as a carrier gas, which can carry the gaseous metal organic compounds evaporated from the source bottle out of the source bottle. This method of blowing the source out is called surface blowing (vapor draw). The carrier gas carrying the gaseous source passes through a series of process gas pipelines and finally reaches the process chamber, where a thermal decomposition reaction occurs on the surface of the wafer and a film of a certain thickness is grown. According to the principle of liquid evaporation, in a closed space at a certain temperature, the vapor evaporated from the liquid will not continue to increase, and will reach a gas-liquid equilibrium state after reaching the saturated vapor pressure. Therefore, in a constant temperature space, for a specific liquid, the amount of vapor is only related to the volume of the vapor. For CVD reactions, the temperature set in the source bottle is kept constant throughout the life cycle of the process.

[0003] In the process of CVD machine production, as the process proceeds, the amount of liquid source in the source bottle will gradually decrease, while the volume in the source bottle remains unchanged, which will cause the volume occupied by the steam in the source bottle to gradually increase, that is, the amount of gaseous source in the source bottle will gradually increase. Therefore, in the process of continuous consumption of a bottle of source, the amount of gaseous source taken out later will increase, which will cause the thickness of the film grown on the wafer surface to gradually become thicker during the entire process cycle. The process requires the thickness of the film to be uniform.

[0004] Therefore, how to keep the amount of the gas source carried out by the carrier gas stable is a technical problem that technicians in this field need to solve urgently. Summary of the invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and a source bottle device thereof, which can keep the amount of gaseous source brought out by the carrier gas stable.

[0006] In order to achieve the purpose of the present application, a source bottle device is provided for semiconductor process equipment, comprising a bottle body, a partition located inside the bottle body and an automatic liquid replenishing mechanism; wherein,

[0007] The partition extends from the bottom to the top of the bottle body to separate the interior of the bottle body into a first cavity and a second cavity;

[0008] The first chamber is provided with an air inlet and an air outlet, the air inlet is used to introduce a carrier gas, the air outlet is used to connect to a process chamber of the semiconductor process equipment to output the carrier gas carrying a gaseous source to the process chamber, and the second chamber is used to store a liquid source;

[0009] The partition is provided with a liquid replenishing hole at a preset distance from the bottom of the bottle body, and the liquid replenishing hole connects the first cavity and the second cavity;

[0010] The automatic liquid replenishment mechanism is used to seal the liquid replenishment hole when the liquid source in the first cavity reaches a preset liquid level; when the liquid source in the first cavity is lower than the preset liquid level, open the liquid replenishment hole so that the liquid source in the second cavity can flow into the first cavity through the liquid replenishment hole.

[0011] In some embodiments, the automatic liquid replenishment mechanism includes a float and a sealing portion;

[0012] The float can float on the surface of the liquid source in the first cavity, and is used to drive the sealing part to seal the liquid filling hole when the liquid source in the first cavity reaches a preset liquid level; when the liquid source in the first cavity is lower than the preset liquid level, drive the sealing part to open the liquid filling hole.

[0013] In some embodiments, the automatic fluid replenishment mechanism further comprises a sleeve, the outer peripheral surface of the sleeve is sealed and connected to the fluid replenishment hole, the sealing part is installed in the sleeve through a rotating shaft, the sealing part has a first sealing surface that is sealed and fitted with the inner wall of the sleeve, and the first sealing surface is a rotation surface with the rotating shaft as the axis;

[0014] A sealing protrusion is provided in the sleeve, and the sealing part has a flow groove. The sealing protrusion penetrates into the flow groove, and a flow channel is formed between the flow groove and the sealing protrusion. When the liquid source in the first chamber is lower than the preset liquid level, the sealing part rotates around the rotating axis driven by the float, so that the side wall of the flow groove fits and seals with the sealing protrusion.

[0015] In some embodiments, the automatic liquid replenishing mechanism further includes a connecting rod, and the float is located in the first cavity and is connected to the sealing portion through the connecting rod.

[0016] In some embodiments, a first one-way valve is further disposed in the sleeve to limit the flow direction of the liquid source to flow from the second chamber to the first chamber.

[0017] In some embodiments, a baffle is provided at one end of the sleeve close to the second chamber, a flow hole is formed between the lower end of the baffle and the lower side wall of the sleeve, and the first one-way valve is arranged in the flow hole.

[0018] In some embodiments, the partition is provided with a connecting hole near the top of the bottle body for connecting the first cavity and the second cavity.

[0019] In some embodiments, an air inlet pipe is provided in the air inlet, and the lower end of the air inlet pipe extends to the lower part of the first cavity.

[0020] In some embodiments, a second one-way valve is provided in the connecting hole to limit the flow direction of the gas to flow from the first chamber to the second chamber.

[0021] In some embodiments, a liquid level sensor is further included, wherein the liquid level sensor is disposed in the second cavity and is used to measure the liquid level of the liquid source in the second cavity.

[0022] The present application also provides a semiconductor process equipment, comprising a process chamber, an air inlet pipeline and any one of the source bottle devices described above, wherein the source bottle device is arranged in the air inlet pipeline to provide a gaseous source to the process chamber.

[0023] This application has the following beneficial effects:

[0024] The source bottle device provided in the present application is used for semiconductor process equipment, including a bottle body, a partition located in the bottle body and an automatic liquid replenishing mechanism; wherein the partition extends from the bottom to the top of the bottle body to divide the inside of the bottle body into a first chamber and a second chamber; the first chamber is provided with an air inlet and an air outlet, the air inlet is used to introduce a carrier gas, the air outlet is used to connect to a process chamber of the semiconductor process equipment to output a carrier gas carrying a gaseous source to the process chamber, and the second chamber is used to store a liquid source; the partition is provided with a liquid replenishing hole at a preset distance from the bottom of the bottle body, and the liquid replenishing hole connects the first chamber and the second chamber; the automatic liquid replenishing mechanism is used to seal the liquid replenishing hole when the liquid source in the first chamber reaches a preset liquid level; when the liquid source in the first chamber is lower than the preset liquid level, the liquid replenishing hole is opened so that the liquid source in the second chamber can pass through the liquid replenishing hole and flow into the first chamber.

[0025] The automatic liquid replenishing mechanism can automatically replenish liquid according to the liquid level of the liquid source in the first cavity, so that the liquid source in the first cavity is always kept near the preset liquid level. Therefore, the space occupied by the gas source in the first cavity remains unchanged, ensuring that the amount of the gas source carried by the carrier gas remains stable, thereby improving the uniformity of the thickness of the film grown on the wafer surface.

[0026] The present application also provides a semiconductor process equipment including the above-mentioned source bottle device and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of a source bottle device in a specific implementation manner of the present application;

[0028] Figure 2 for Figure 1 A schematic diagram of the structure of the Zhongyuan bottle device from another angle;

[0029] Figure 3 for Figure 1 A schematic diagram of the structure of the automatic liquid replenishing mechanism;

[0030] Figure 4 for Figure 1 Schematic diagram of the fluid replenishment process of the automatic fluid replenishment mechanism.

[0031] in, Figures 1 to 4 The reference numerals in the drawings are:

[0032] 1. Bottle body; 2. Partition; 3. Second chamber; 4. First chamber; 5. Automatic liquid replenishing mechanism;

[0033] 6. Second one-way valve; 7. Air inlet; 8. Air outlet; 9. Filling port; 51. Sleeve; 52. Sealing protrusion; 53. Sealing part; 54. Float; 55. Connecting rod; 56. Rotating shaft; 57. Baffle; 58. First one-way valve; 59. Flow channel. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the source bottle device thereof provided by the present application are described in detail below in conjunction with the accompanying drawings.

[0035] The source bottle device provided in the present application is used in semiconductor process equipment. The source bottle device comprises a bottle body 1, a partition 2 located inside the bottle body, and an automatic liquid replenishing mechanism 5. Figure 1 and Figure 2 As shown, the partition 2 extends from the bottom to the top of the bottle body 1, and divides the inner cavity of the bottle body 1 into a first cavity 4 and a second cavity 3. Among them, the second cavity 3 is used to store a liquid source. The partition 2 is provided with a liquid replenishment hole at a preset distance from the bottom of the bottle body 1. The liquid replenishment hole connects the first cavity 4 and the second cavity 3. The liquid source in the second cavity 3 can flow into the first cavity 4 through the liquid replenishment hole, and the liquid source evaporates in the first cavity 4 to generate a gas source. When the liquid source in the first cavity 4 is lower than the preset liquid level, the automatic liquid replenishment mechanism 5 replenishes the liquid source in the second cavity 3 into the first cavity 4. When the liquid source in the first cavity 4 reaches the preset liquid level, the automatic liquid replenishment mechanism 5 seals the liquid replenishment hole to separate the second cavity 3 and the first cavity 4.

[0036] The first chamber 4 is provided with an inlet 7 and an outlet 8. The inlet 7 is used to introduce carrier gas, and the outlet 8 is used to connect to the process chamber of the semiconductor process equipment. After the carrier gas enters the first chamber 4, it carries the gas source in the first chamber 4 to the process chamber. Figure 1 As shown, the partition 2 can be arranged perpendicular to the bottom surface of the bottle body 1. Of course, the user can also arrange the partition 2 and the bottom surface of the bottle body 1 to form other angles as needed, which is not limited here.

[0037] The preset distance between the liquid replenishing hole and the bottom of the bottle body 1 is relatively small, and the value of the preset liquid level of the liquid source in the first cavity 4 is close to the value of the preset distance, so that the space occupied by the liquid source in the first cavity 4 is relatively small, and the space occupied by the gas source is relatively large, ensuring that the source bottle device can provide sufficient gas source. Of course, the user can also set the size of the preset distance as needed, which is not limited here.

[0038] In this embodiment, the source bottle device replenishes the liquid source from the second chamber 3 to the first chamber 4 through the automatic liquid replenishing mechanism 5, so that the liquid level of the liquid source in the first chamber 4 is maintained at a preset liquid level. Since the liquid level of the liquid source in the first chamber 4 is stable, the volume of the gas source in the first chamber 4 remains basically unchanged, and the gas source carried by the carrier gas also remains basically unchanged, thereby ensuring the uniformity of the thickness of the thin film grown on the wafer surface during the process.

[0039] In some embodiments, the automatic liquid replenishment mechanism 5 includes a float 54 and a sealing portion 53, and the float 54 can float on the surface of the liquid source in the first cavity 4. When the liquid source in the first cavity 4 is lower than the preset liquid level, the float 54 drives the sealing portion 53 to open the liquid replenishment hole, so that the liquid source in the second cavity 3 can flow into the first cavity 4 along the liquid replenishment hole, completing the automatic liquid replenishment. When the liquid source in the first cavity 4 reaches the preset liquid level, the float 54 drives the sealing portion 53 to seal the liquid replenishment hole, thereby isolating the second cavity 3 and the first cavity 4.

[0040] In some embodiments, the automatic refilling mechanism 5 further includes a sleeve 51, which is disposed in the refilling hole, and the outer peripheral surface of the sleeve 51 is sealed and connected to the refilling hole. The sealing portion 53 is installed in the sleeve 51 through a rotating shaft 56, and the rotating shaft 56 is usually arranged in a horizontal direction, perpendicular to the axis of the sleeve 51, and intersecting with the axis of the sleeve 51. The sealing portion 53 can be a rotating body with the axis of the rotating shaft 56 as the axis, and the outer surface of the sealing portion 53 is a rotating surface, which can be used as a first sealing surface to seal and fit with the inner wall of the sleeve 51. Figure 2 As shown, the cross section of the sleeve 51 is circular, and accordingly, the shape of the sealing portion 53 can be a spherical shape with a notch, and the diameter of the sealing portion 53 is equal to the diameter of the inner side of the sleeve 51, so that the first sealing surface can be sealed against the inner wall of the sleeve 51. Of course, the cross section of the sleeve 51 can also be other shapes, such as a rectangle, and the corresponding shape of the sealing portion 53 is a cylindrical shape with a notch, which is not limited here.

[0041] Optionally, the sealing portion 53 has a flow groove, such as Figure 3 and Figure 4 The notch of the spherical sealing part 53 shown in the figure, the flow groove can be a V-shaped groove penetrating the sealing part 53, and its two side walls are arranged parallel to the rotation axis 56. A sealing protrusion 52 is arranged inside the sleeve 51, and the sealing protrusion 52 penetrates into the flow groove. The sum of the height between the top and the bottom of the sealing protrusion 52 and the depth of the flow groove is greater than the radius of the inner side of the sleeve 51. Figure 3 The middle sealing part 53 can be rotated clockwise to make its side wall fit with the sealing protrusion 52. At this time, the side wall of the flow groove is the second sealing surface, and the surface where the sealing protrusion 52 and the second sealing groove fit together is the third sealing surface. The two fit together and seal, which can separate the first cavity 4 and the second cavity 3 located at the two ends of the sleeve 51 respectively.

[0042] The sealing portion 53 is located at Figure 3 and Figure 4 At the position shown, there is a certain gap between the sealing protrusion 52 and the inner wall of the flow groove, and the gap forms a flow channel 59. The liquid source in the second chamber 3 has a higher level. The liquid source can flow to the first chamber 4 under the action of hydraulic pressure, so that the liquid level of the liquid source in the first chamber 4 increases. In this process, the height of the float 54 increases together with the liquid level of the liquid source. The float 54 rises under the action of buoyancy and drives the sealing part 53 to rotate clockwise until the second sealing surface fits the third sealing surface, separating the first chamber 4 from the second chamber 3. As the process proceeds, the liquid source in the first chamber 4 will be gradually consumed, causing its liquid level to drop slightly. The height of the float 54 decreases under the action of gravity, and at the same time, the float 54 drives the sealing part 53 to rotate counterclockwise, so that the second sealing surface is away from the third sealing surface, thereby forming a flow channel 59 in the automatic liquid replenishment mechanism 5. The second chamber 3 replenishes the liquid source to the first chamber 4 through the flow channel 59, realizing the automatic replenishment and liquid level control of the liquid source in the first chamber 4 under the unpowered state.

[0043] Optionally, the automatic liquid replenishing mechanism 5 further includes a connecting rod 55. Figure 4 As shown, the float 54 is located in the first cavity 4 and is connected to the sealing portion 53 through a connecting rod 55. The float 54 is arranged in the first cavity 4, which can increase the contact area with the liquid source, increase the buoyancy of the float 54, and thus improve the sensitivity of the automatic liquid replenishment mechanism 5. In addition, the automatic liquid replenishment mechanism 5 is located outside the sleeve 51, which can avoid interference with the sleeve 51 and reduce the risk of the float 54 getting stuck. Optionally, the connecting rod 55 can also be made of a material with a density less than that of the liquid source, so as to further increase the buoyancy of the float 54 and the connecting rod 55. Of course, the material of the connecting rod 55 can be selected according to user needs and is not limited here.

[0044] Since carrier gas needs to be introduced into the first chamber 4 during the process, the carrier gas pressure fluctuation will cause the pressure in the first chamber 4 to change. If the pressure in the first chamber 4 is greater than that in the second chamber 3, the liquid source in the first chamber 4 may flow into the second chamber 3. To avoid such a situation, a first one-way valve 58 is further provided in the sleeve 51. The first one-way valve 58 limits the flow direction of the liquid source to flow from the second chamber 3 to the first chamber 4, that is, the liquid source can flow from the second chamber 3 to the first chamber 4, but cannot flow from the first chamber 4 to the second chamber 3, thereby avoiding the problem of liquid source backflow.

[0045] Optionally, a baffle 57 is provided at one end of the sleeve 51 close to the second chamber 3, a flow hole is formed between the lower end of the baffle 57 and the lower side wall of the sleeve 51, and the first one-way valve 58 is arranged in the flow hole. The baffle 57 can limit the cross-sectional area of ​​the sleeve 51, which facilitates the installation of the first one-way valve 58. The user can also install the first one-way valve 58 in other ways as needed, which is not limited here.

[0046] Optionally, an air inlet pipe is provided in the air inlet 7, and the lower end of the air inlet pipe extends to the lower part of the first chamber 4. The carrier gas can flow into the lower part of the first chamber 4 along the air inlet pipe, then flow upward from the lower part of the first chamber 4, and finally flow out from the air outlet 8. The carrier gas can be fully mixed with the gaseous source in the first chamber 4, so that the amount of the gaseous source carried by the carrier gas remains stable, so that the thickness of the film generated during the process is uniform.

[0047] As the liquid source in the second chamber 3 is continuously replenished to the first chamber 4, the liquid level in the second chamber 3 gradually decreases, and the air pressure in the second chamber 3 will also decrease accordingly, affecting the replenishment of the liquid source in the second chamber 3 to the first chamber 4. In order to maintain sufficient pressure in the second chamber 3, the partition 2 is provided with a connecting hole close to the top of the bottle body 1. The connecting hole connects the top of the first chamber 4 with the top of the second chamber 3. As the liquid level in the second chamber 3 gradually decreases, the pressure in the second chamber 3 also gradually decreases. At this time, the gas in the first chamber 4 can pass through the connecting hole to replenish the second chamber 3, ensuring that the air pressure in the second chamber 3 and the first chamber 4 are equal. Under the action of hydraulic pressure, the liquid source in the second chamber 3 can pass through the flow channel 59 of the automatic liquid replenishment mechanism 5 to replenish the first chamber 4, ensuring the stability of the liquid level in the first chamber 4.

[0048] Optionally, a second one-way valve 6 is provided in the connecting hole to limit the flow direction of the gas to flow from the first chamber 4 to the second chamber 3, that is, the gas can only flow from the first chamber 4 to the second chamber 3, and cannot flow from the second chamber 3 to the first chamber 4, so that the amount of gaseous source brought out by the carrier gas is not affected by the change of the liquid level in the second chamber 3, thereby ensuring that the amount of gaseous source brought out by the carrier gas is stable, and further ensuring that the thickness of the film generated in the process is uniform.

[0049] In this embodiment, a connecting hole is provided in the source bottle device to connect the top of the first chamber 4 with the top of the second chamber 3, so that the gas in the first chamber 4 can enter the second chamber 3 to maintain the stability of the gas pressure in the second chamber 3. In addition, a second one-way valve 6 is provided in the connecting hole to ensure that the amount of gaseous source brought out by the carrier gas is not affected by the liquid level of the second chamber 3, thereby improving the uniformity of thin film growth on the wafer surface.

[0050] In some embodiments, the source bottle device further includes a liquid level sensor, which is disposed in the second chamber 3 and is used to measure the liquid level of the liquid source in the second chamber 3. When the liquid level in the second chamber 3 drops to the height of the top of the sealing protrusion 52, the liquid source in the second chamber 3 cannot be replenished into the first chamber 4, and the source bottle device completes a use cycle.

[0051] Optionally, a filling port 9 is provided at the top of the second cavity 3. After the source bottle device completes a use cycle, it needs to be removed from the semiconductor process equipment and refilled with liquid source through the filling port 9 before entering the next use cycle.

[0052] When the liquid source is poured into the empty source bottle device from the filling port 9, the liquid source will first reach the side of the position baffle 57 close to the second chamber 3. At this time, the liquid level of the first chamber 4 is usually lower than the preset liquid level, and the flow channel 59 of the automatic liquid replenishment mechanism 5 is opened, and the liquid source will flow into the first chamber 4 along the second one-way valve 6 and the flow channel 59, so that the liquid level of the liquid source in the first chamber 4 gradually rises. When filling the liquid source, the liquid level of the liquid source in the second chamber 3 should not exceed the height of the connecting hole. When the liquid source is filled, the filling port 9 is closed and isolated from the outside world. After the source bottle device is filled, the space in the source bottle device except the liquid source is occupied by air, and the air pressure in the source bottle device is 1 atmosphere. The source bottle needs to be depressurized when it is installed on the equipment. During depressurization, the vacuum device is connected to the filling port 9, and the air in the source bottle device is extracted through the filling port 9, so that the air pressure in the space outside the liquid source in the source bottle device is reduced to a vacuum state. Specifically, during the pressure relief process, the air in the second chamber 3 is firstly pumped out, so that the air pressure in the second chamber 3 is slightly lower than that in the first chamber 4. At this time, the second one-way valve 6 is opened, and the gas in the first chamber 4 can pass through the second one-way valve 6 and flow into the second chamber 3. The vacuum device is continuously operated to pump out the air in the first chamber 4 and the liquid infusion chamber, thereby making both chambers reach a vacuum state.

[0053] In this embodiment, a filling port 9 is provided at the top of the second cavity 3 of the source bottle device. After the source bottle device completes a use cycle, liquid source can be filled into the second cavity 3 through the filling port 9, so that the source bottle device can be reused.

[0054] The present application also provides a semiconductor process equipment, including a process chamber, an air intake pipe and a source bottle device in any one of the above embodiments, wherein the source bottle device is arranged in the air intake pipe to provide a gaseous source to the process chamber; the structure of other parts of the semiconductor process equipment can refer to the prior art and will not be repeated here.

[0055] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A source bottle device for semiconductor process equipment, characterized in that: It includes a bottle body, a partition located inside the bottle body and an automatic liquid replenishing mechanism; wherein, The partition extends from the bottom to the top of the bottle body to separate the interior of the bottle body into a first cavity and a second cavity; The first chamber is provided with an air inlet and an air outlet, the air inlet is used to introduce a carrier gas, the air outlet is used to connect to a process chamber of the semiconductor process equipment to output the carrier gas carrying a gaseous source to the process chamber, and the second chamber is used to store a liquid source; The partition is provided with a liquid replenishing hole at a preset distance from the bottom of the bottle body, and the liquid replenishing hole connects the first cavity and the second cavity; The automatic liquid replenishment mechanism is used to seal the liquid replenishment hole when the liquid source in the first cavity reaches a preset liquid level; when the liquid source in the first cavity is lower than the preset liquid level, open the liquid replenishment hole so that the liquid source in the second cavity can flow into the first cavity through the liquid replenishment hole.

2. The source bottle device according to claim 1, characterized in that: The automatic liquid replenishing mechanism includes a float and a sealing part; The float can float on the surface of the liquid source in the first cavity, and is used to drive the sealing part to seal the liquid filling hole when the liquid source in the first cavity reaches a preset liquid level; when the liquid source in the first cavity is lower than the preset liquid level, drive the sealing part to open the liquid filling hole.

3. The source bottle device according to claim 2, characterized in that: The automatic liquid replenishing mechanism further comprises a sleeve, the outer peripheral surface of the sleeve is sealedly connected to the liquid replenishing hole, the sealing part is installed in the sleeve via a rotating shaft, the sealing part has a first sealing surface that is sealedly fitted with the inner wall of the sleeve, and the first sealing surface is a rotating surface with the rotating shaft as an axis; A sealing protrusion is provided in the sleeve, and the sealing part has a flow groove. The sealing protrusion penetrates into the flow groove, and a flow channel is formed between the flow groove and the sealing protrusion. When the liquid source in the first chamber is lower than the preset liquid level, the sealing part rotates around the rotating axis driven by the float, so that the side wall of the flow groove fits and seals with the sealing protrusion.

4. The source bottle device according to claim 2, characterized in that: The automatic liquid replenishing mechanism further includes a connecting rod, and the floating body is located in the first cavity and is connected to the sealing part through the connecting rod.

5. The source bottle device according to claim 3, characterized in that: A first one-way valve is also provided in the sleeve, for limiting the flow direction of the liquid source to flow from the second cavity to the first cavity.

6. The source bottle device according to claim 5, characterized in that: A baffle is provided at one end of the sleeve close to the second chamber, a flow hole is formed between the lower end of the baffle and the lower side wall of the sleeve, and the first one-way valve is arranged in the flow hole.

7. The source bottle device according to any one of claims 1 to 6, characterized in that: The partition is provided with a connecting hole near the top of the bottle body, which is used to connect the first cavity and the second cavity.

8. The source bottle device according to any one of claims 1 to 6, characterized in that: An air inlet pipe is provided in the air inlet, and the lower end of the air inlet pipe extends to the lower part of the first cavity.

9. The source bottle device according to claim 7, characterized in that: A second one-way valve is provided in the communicating hole to limit the flow direction of the gas to flow from the first cavity to the second cavity.

10. The source bottle device according to any one of claims 1 to 6, characterized in that: It also includes a liquid level sensor, which is arranged in the second cavity and is used to measure the liquid level of the liquid source in the second cavity.

11. A semiconductor process equipment, characterized in that: It comprises a process chamber, an air inlet pipeline and a source bottle device according to any one of claims 1 to 10, wherein the source bottle device is arranged in the air inlet pipeline and is used to provide a gaseous source to the process chamber.

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