Base and method for improving in-wafer uniformity of epitaxial process and epitaxial equipment

Abstract

The invention discloses a base and a method for improving uniformity in an epitaxial process wafer and epitaxial equipment, the base comprises a body, the surface of the body is provided with a groove, the surface of the body outside the groove has a shape for forming diffuse reflection on heating illumination, the absorption capability on illumination heat can be improved, and the uniformity of the epitaxial process wafer is improved. When an object to be processed is placed in the groove to be subjected to an epitaxial process, the edge temperature of the body outside the groove can be increased through illumination by utilizing the diffuse reflection effect of the surface of the body outside the groove on illumination, and the temperature of the edge of the object to be processed tends to be consistent with the temperature of the center through conduction, so that the temperature of the edge of the object to be processed tends to be consistent with the temperature of the center of the object to be processed. Therefore, the thickness difference of the deposited film layer in the center and the edge of the processed object in the epitaxial process can be reduced, the thickness uniformity of the deposited film layer on the surface of the processed object is improved, and the yield is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor integrated circuit process technology, and in particular to a base and method for improving the uniformity of film thickness in a wafer during an epitaxial process, and an epitaxial device containing the base. Background Art

[0002] The existing thin film epitaxial deposition process mostly uses low-pressure chemical vapor deposition process to selectively deposit a single crystal film layer with uniform thickness on the surface of the wafer. Among them, the temperature in the process is a crucial process parameter. The difference between the center temperature and the edge temperature of the chamber during the process will directly affect the thickness difference between the center and edge of the wafer.

[0003] refer to Figure 1 , which schematically shows a partial structure of an existing base 1 (the base 1 shown in the figure has a symmetrical structure extending to the left). A base 1 for placing a wafer 30 is provided in a chamber (not shown) of an epitaxial deposition device, and a groove 2 is provided on the surface of the base 1 in the center of the base 1 for placing the wafer 30 in the groove 2; an edge surface 3 of the base outside the groove 2 surrounds the groove 2. After the wafer 30 is placed in the groove 2, the edge surface 3 of the base outside the groove 2 is substantially flush with the surface of the wafer 30. Since the edge surface 3 of the brand new base 1 has a relatively small roughness, the reflection of light by the edge surface 3 of the base 1 is close to mirror reflection, such as Figure 2 shown.

[0004] When using a new epitaxial deposition device or in the process after the chamber of the epitaxial deposition device is maintained, the edge surface 3 of the base 1 with a brand new mirror surface state will have a greater reflection effect on the light under the irradiation of the heating lamp 20 provided in the chamber, making the temperature difference between the center temperature and the edge temperature of the base 1 more obvious during the process. The existing coping method is generally to adjust the temperature field distribution to reduce the difference between the center and the edge for new epitaxial deposition equipment or after the chamber maintenance, but it cannot achieve good results. Summary of the invention

[0005] The object of the present invention is to overcome the above-mentioned defects in the prior art and to provide a base, method and epitaxial equipment for improving the uniformity of the epitaxial process wafer.

[0006] To achieve the above object, the technical solution of the present invention is as follows:

[0007] The present invention provides a susceptor for improving the uniformity of an epitaxial process wafer, comprising:

[0008] A main body, wherein a groove is provided on the surface of the main body, and the surface of the main body other than the groove has a morphology of diffuse reflection of heating light, so that when a processing object is placed in the groove for epitaxial process, the diffuse reflection of light by the surface of the main body other than the groove is utilized to improve the heat absorption capacity, and the temperature of the edge of the processing object is made consistent with the temperature of the center through conduction.

[0009] Furthermore, the roughness of the surface of the body outside the groove is higher than the roughness of the inner wall surface of the groove.

[0010] Furthermore, the surface of the body other than the groove is a surface having a heat-conducting layer, and the heat-conducting layer has a surface morphology that diffuses the heating light; the inner wall surface of the groove is a surface without the heat-conducting layer, or the inner wall surface of the groove is a surface without any heterogeneous material layer.

[0011] Furthermore, the thermal conductive layer material includes silicon carbide.

[0012] Furthermore, the roughness of the heat-conducting layer is 0.14-0.15 μm; and / or the thickness of the heat-conducting layer is 1.5-2.5 μm.

[0013] The present invention also provides an epitaxial device, comprising a process chamber, wherein the process chamber is provided with the above-mentioned base for improving the uniformity of the epitaxial process wafer.

[0014] The present invention also provides a method for improving the uniformity of an epitaxial process wafer, comprising:

[0015] A process chamber is provided, wherein a base is provided in the process chamber, wherein the base comprises a body, and a groove is provided on the surface of the body for placing a processing object;

[0016] The surface of the body other than the groove is processed to have a morphology that forms diffuse reflection of heating light;

[0017] The processing object is placed in the groove for epitaxial process and light heating. The diffuse reflection of light by the surface of the main body outside the groove is utilized to improve the heat absorption capacity, so as to increase the edge temperature of the main body outside the groove, and make the temperature of the edge of the processing object consistent with the temperature of the center through conduction.

[0018] Further, the processing of the surface of the body other than the groove specifically includes: forming a heat-conducting layer on the surface of the body other than the groove, so that the heat-conducting layer has a surface morphology that diffuses the heating light, so that the surface of the body other than the groove has a morphology that diffuses the heating light, and the inner wall surface of the groove does not have the heat-conducting layer; or, the processing of the surface of the body other than the groove specifically includes: forming a heat-conducting layer on the surface of the body other than the groove, so that the heat-conducting layer has a surface morphology that diffuses the heating light, so that the surface of the body other than the groove has a morphology that diffuses the heating light, and the inner wall surface of the groove does not have any heterogeneous material layer.

[0019] Furthermore, a magnetron sputtering process is used to form a silicon carbide thermal conductive layer with a thickness of 1.5 to 2.5 μm on the surface of the main body outside the groove; and / or, by forming a thermal conductive layer on the surface of the main body outside the groove, the roughness of the surface of the main body outside the groove is higher than the roughness of the inner wall surface of the groove.

[0020] Furthermore, the method further comprises: performing thermal annealing on the formed silicon carbide heat conducting layer so that the roughness of the silicon carbide heat conducting layer reaches 0.14-0.15 μm.

[0021] It can be seen from the above technical scheme that the present invention changes the morphological features of the body surface outside the groove on the base body, so that the body surface outside the groove has a morphology of diffuse reflection of the heating light. In this way, when the processing object is placed in the groove for epitaxial process, the diffuse reflection effect of the body surface outside the groove on the light can be used to improve the absorption capacity of the body edge surface to the heat of the light, thereby increasing the temperature of the edge of the body outside the groove, and through heat conduction, the temperature of the edge of the processing object is made consistent with the temperature of the center, so that the thickness difference of the deposited film layer in the center and edge of the processing object in the epitaxial process can be reduced, and the uniformity within the chip can be effectively improved. Further, by forming a heat-conducting layer (such as a silicon carbide film layer) with a certain thickness and roughness on the surface of the body outside the groove, the heat-conducting layer has a surface morphology of diffuse reflection of the heating light, so that the surface of the body outside the groove has a morphology of diffuse reflection of the heating light. The method is simple, compatible with the existing process, and can maintain the diffuse reflection morphology even after chamber maintenance, ensuring durability and process stability, thereby significantly improving the yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The figure is a schematic diagram of the partial structure of an existing base.

[0023] Figure 2 for Figure 1 Schematic diagram of the state when the surface of part A in the middle forms a mirror reflection of light.

[0024] Figure 3 The figure is a schematic diagram of the partial structure of a base for improving the uniformity within an epitaxial process wafer according to a preferred embodiment of the present invention.

[0025] Figure 4 for Figure 3 Schematic diagram of the state when the edge surface of the middle part B forms diffuse reflection of light.

[0026] Figure 5 The figure is a flow chart of a method for improving the uniformity within an epitaxial process wafer according to a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0028] A susceptor for improving uniformity in an epitaxial process wafer of the present invention comprises:

[0029] A main body, wherein a groove is provided on the surface of the main body, and the surface of the main body other than the groove has a morphology of diffuse reflection of heating light, so that when a processing object is placed in the groove for epitaxial process, the diffuse reflection of light by the surface of the main body other than the groove is utilized to improve the heat absorption capacity, and the temperature of the edge of the processing object is made consistent with the temperature of the center through conduction.

[0030] A method for improving the uniformity of an epitaxial process wafer of the present invention comprises:

[0031] A process chamber is provided, wherein a base is provided in the process chamber, wherein the base comprises a body, and a groove is provided on the surface of the body for placing a processing object;

[0032] The surface of the body other than the groove is processed to have a morphology that forms diffuse reflection of heating light;

[0033] The processing object is placed in the groove for epitaxial process and light heating. The diffuse reflection of light by the surface of the main body outside the groove is utilized to improve the heat absorption capacity, so as to increase the edge temperature of the main body outside the groove, and make the temperature of the edge of the processing object consistent with the temperature of the center through conduction.

[0034] The present invention changes the morphological features of the body surface outside the groove on the base body so that the body surface outside the groove has a morphology of diffuse reflection of heating light. In this way, when the processing object is placed in the groove for epitaxial process, the diffuse reflection effect of the body surface outside the groove on the light can be utilized to improve the absorption capacity of the body edge surface to the heat of light, thereby increasing the temperature of the body edge portion outside the groove, and through heat conduction, the temperature of the edge of the processing object is made consistent with the temperature of the center, thereby reducing the thickness difference of the deposited film layer at the center and edge of the processing object in the epitaxial process, and achieving effective improvement of the uniformity within the chip.

[0035] The specific implementation modes of the present invention are further described in detail below in conjunction with the accompanying drawings.

[0036] refer to Figure 3 , which schematically shows a partial structure of a base 10 of the present invention (the base 10 shown in the figure has a symmetrical structure extending to the left). The following takes the use of a circular processing object, such as a wafer 30 surface, for thin film epitaxial deposition using a low-pressure chemical vapor deposition process as an example to describe the specific implementation of the present invention in detail. A base 10 of the present invention for improving the uniformity of the epitaxial process wafer is provided with a circular body 11. A circular groove 12 is provided at the center on the surface of the body 11, and the size of the groove corresponds to the size of the wafer 30 to be processed, so that the wafer 30 can be placed in the groove for epitaxial processing. The body edge surface 13 outside the groove 12 surrounds the groove 12. A support structure is usually provided on the inner wall of the groove 12, and the wafer 30 is placed on the support structure to obtain support and fixation. After the wafer 30 is placed in the groove, the body edge surface 13 outside the groove 12 is substantially flush with the surface of the wafer 30.

[0037] On the base 10 of the present invention, the edge surface 13 of the body 11 outside the groove 12 has a morphology that diffuses the heating light. For example, the edge surface 13 of the body outside the groove 12 has a relatively high roughness, under which the edge surface 13 of the body 11 outside the groove 12 has an uneven microscopic morphology that diffuses the heating light, such as Figure 4 The heating light is generally achieved by providing a heating lamp 20 .

[0038] The inventors found that when the edge surface of the body 11 outside the groove 12 (the edge surface of the existing body 11) has a small roughness (in a brand new state or just after the chamber maintenance), so that the edge surface of the body 11 outside the groove 12 has a flat microscopic morphology that forms a mirror reflection or a near-mirror reflection of the heating light, when the wafer 30 is placed in the groove 12 for epitaxial process, the heat absorption capacity of the edge of the body 11 deteriorates due to the reflected light, which makes the temperature difference between the center and the edge of the wafer 30 more obvious during the process, resulting in the temperature of the edge of the wafer 30 being lower than the temperature of the center. Therefore, after using a brand new base 10 or chamber maintenance, the temperature field distribution is generally adjusted to reduce the difference between the center and the edge, but it does not achieve a good effect.

[0039] In view of the above phenomenon, the inventor preliminarily changes the morphological features of the edge surface of the body outside the groove 12 on the base body 11, so that the new edge surface 13 of the body outside the groove 12 after the morphology change has a morphology of diffuse reflection of the heating light, even if the edge surface 13 of the body outside the groove 12 has a relatively high roughness. In this way, when the wafer 30 is placed in the groove 12 for epitaxial process, the diffuse reflection effect of the edge surface 13 of the body outside the groove 12 on the light can be utilized to improve the absorption capacity of the edge surface 13 of the body for the heat of light, thereby increasing the temperature of the edge of the body 11 outside the groove 12, and through heat conduction, the temperature of the edge of the wafer 30 is made consistent with the temperature of the center, so that the thickness difference of the single crystal film layer deposited in the epitaxial process at the center and edge of the wafer 30 can be reduced, so that the thickness uniformity of the deposited film layer on the surface of the wafer 30 can be improved, that is, the uniformity of the film thickness within the wafer 30 is effectively improved.

[0040] In some embodiments, the roughness of the body edge surface 13 outside the groove 12 is higher than the roughness of the inner wall surface of the groove 12. When the chamber is preheated before the wafer 30 is placed, the body edge surface 13 outside the groove 12 absorbs sufficient heat energy to keep the temperature of the edge of the body 11 consistent with the temperature of the center of the body 11. In this way, when the wafer 30 is placed in the groove 12, not only can the heating time of the wafer 30 be shortened, but also the consistency of the temperature of the edge and the center of the wafer 30 can be easily ensured.

[0041] refer to Figure 3-Figure 4 In some embodiments, the edge surface 13 of the body 11 outside the groove 12 is a surface having a heat-conducting layer 14, that is, the edge surface 13 of the body 11 outside the groove 12 has the heat-conducting layer 14, that is, the surface of the heat-conducting layer 14 forms the edge surface 13 of the body 11 outside the groove 12. The surface of the heat-conducting layer 14 has a relatively high roughness, so that the heat-conducting layer 14 has a surface morphology that forms diffuse reflection of heating light.

[0042] It should also be noted that the heat-conducting layer 14 is only provided on the edge surface 13 of the body 11 outside the groove 12, and the heat-conducting layer 14 is not provided on the inner wall surface of the groove 12. That is, the inner wall surface of the groove 12 is a surface without the heat-conducting layer 14; or, the inner wall surface of the groove 12 is a surface without any material that is heterogeneous with the material of the body 11.

[0043] In some embodiments, the thermally conductive layer 14 material includes silicon carbide.

[0044] In some embodiments, the roughness of the heat-conducting layer 14 is 0.14-0.15 μm. For example, the silicon carbide heat-conducting layer 14 has a roughness of 0.14-0.15 μm. Under this roughness, the silicon carbide heat-conducting layer 14 will effectively form diffuse reflection of the heating light, thereby improving the absorption capacity of the edge of the body 11 to the heat energy of the light, and can quickly conduct the heat energy to the wafer 30 supported on the side wall of the groove 12, so that the temperature of the edge and center of the wafer 30 can be quickly balanced. Thus, compared with the conventional base 1 (e.g., the edge surface 3 with mirror or near mirror reflection) Figure 1 As shown), the present invention is equivalent to adding a circle of auxiliary heating and heat equalization devices on the periphery of the wafer 30, which can not only adjust the temperature consistency of the wafer 30, but also has the effect of quickly equalizing the temperature of the main body 11 itself, thereby significantly improving the quality level of the epitaxial process without changing the chamber structure.

[0045] In some embodiments, the thickness of the heat conductive layer 14 is 1.5 to 2.5 μm. For example, the silicon carbide heat conductive layer 14 has a thickness of 1.5 to 2.5 μm. Under this thickness, the silicon carbide heat conductive layer 14 will have good rapid heat conduction performance and can ensure that after the wafer 30 is placed in the groove 12, the height of the body edge surface 13 is consistent with the surface of the wafer 30. The uniformity of the temperature field will not be affected by the generation of obvious step differences.

[0046] refer to Figure 3 An epitaxial device of the present invention comprises a process chamber (not shown), in which the susceptor 10 for improving the uniformity of the epitaxial process wafer is arranged.

[0047] In some embodiments, the base 10 is located at the lower center of the process chamber; a heating lamp 20 is provided in the process chamber for heating the chamber. A rotating mechanism is connected to the lower center of the base 10, which is used to rotate the base 10 (body 11) at a set speed during the epitaxial process, so that the wafer 30 placed on the base body 11 and fixed in the groove 12 receives the deposition of the epitaxial single crystal thin film in a synchronous rotating state, so that the base 10 with diffuse reflection ability on the edge surface 13 of the present invention does not need to adjust the temperature field distribution to reduce the difference between the center and the edge, and the natural heating setting of the lamp 20 can be used to achieve the uniformity of the thickness of the single crystal film layer deposited on the surface of the entire batch of wafers 30 from the first wafer 30 of the first batch, and achieve good quality effects.

[0048] The process chamber of the epitaxial equipment can be used to perform a low pressure chemical vapor deposition process to perform thin film epitaxial deposition on the surface of the wafer 30 .

[0049] The following is a further detailed description of a method for improving the uniformity within an epitaxial process wafer of the present invention through specific implementation modes and in conjunction with the accompanying drawings.

[0050] refer to Figure 5 A method for improving the uniformity of an epitaxial process wafer of the present invention comprises the following steps:

[0051] Step S1: providing a base 10 including a body 11 .

[0052] For example, Figure 3 The base 10 shown is provided with a body 11. A groove 12 is provided on the surface located at the center of the body 11 for placing a wafer 30. However, the difference is that the edge surface of the body (corresponding to the processed edge surface 13) has not been processed yet.

[0053] Step S2: Processing the edge surface of the main body 11 other than the groove 12 provided on the main body 11 so as to have a morphology that forms diffuse reflection of the heating light.

[0054] The main body 11 before processing is placed in a process equipment that can perform the required processing on the main body 11, so as to process the edge surface of the main body 11 outside the groove 12, so as to change the morphological characteristics of the edge surface of the main body outside the groove 12 by increasing the roughness of the edge surface of the main body 11 outside the groove 12, so that the edge surface of the main body outside the groove 12 has a morphology that forms diffuse reflection of the heating light during the epitaxial process.

[0055] In some embodiments, a method is adopted in which a thermally conductive layer 14 is formed on the edge surface of the body 11 outside the groove 12, and the roughness of the thermally conductive layer 14 is made higher than the original roughness of the edge surface of the body outside the groove 12, so as to change the original roughness of the edge surface of the body 11 outside the groove 12 and form a new edge surface 13 of the body 11 with improved roughness.

[0056] When forming the heat-conducting layer 14 on the edge surface of the body 11 other than the groove 12, the inner wall surface of the groove 12 needs to be shielded so that the inner wall surface of the groove 12 is a surface without the heat-conducting layer 14, that is, it is necessary to avoid depositing the heat-conducting layer 14 on the inner wall surface of the groove 12. During the treatment, the heat-conducting layer 14 formed on the original edge surface of the body 11 other than the groove 12 needs to have a surface roughness morphology that forms diffuse reflection of the heating light, so that the new edge surface 13 of the body 11 other than the groove 12 after the treatment has a morphology that forms diffuse reflection of the heating light.

[0057] In other embodiments, the inner wall surface of the groove 12 is a surface formed by the material of the body 11 itself. That is, the inner wall surface of the groove 12 not only does not have the above-mentioned heat conductive layer 14, but also does not have any other material layer different from the material of the body 11 itself.

[0058] In some embodiments, a magnetron sputtering process is used to form a thermally conductive layer 14 of, for example, silicon carbide with a certain thickness that meets certain roughness requirements on the original edge surface of the body 11 outside the groove 12 to form a new edge surface 13 of the body 11 .

[0059] In some embodiments, a magnetron sputtering process is used to form a silicon carbide thermal conductive layer 14 with a roughness of 0.14-0.15 μm and a thickness of 1.5-2.5 μm on the original edge surface of the main body 11 outside the groove 12, so that the thermal conductive layer 14 has a surface morphology that diffusely reflects the heating light, thereby making the new edge surface 13 of the main body 11 outside the groove 12 have a morphology that diffusely reflects the heating light.

[0060] Furthermore, after forming a silicon carbide thermal conductive layer 14 on the edge surface of the body 11 outside the groove 12 by using a magnetron sputtering process, the formed silicon carbide thermal conductive layer 14 is thermally annealed to make the roughness of the silicon carbide thermal conductive layer 14 reach a stable state of about 0.14 to 0.15 μm, thereby forming a new edge surface 13 of the body 11 with a stable roughness value.

[0061] By forming a silicon carbide heat conductive layer 14 on the edge surface of the body 11 outside the groove 12 , the roughness of the new body edge surface 13 outside the groove 12 becomes higher than the roughness of its original surface and higher than the roughness of the inner wall surface of the groove 12 .

[0062] Step S3: installing the processed susceptor 10 in a process chamber.

[0063] The processed susceptor 10 is installed in a low pressure chemical vapor deposition process chamber for growing epitaxial single crystal thin films, for example, so that the wafer 30 can be subjected to an epitaxial single crystal thin film forming process using the novel susceptor 10 of the present invention after surface roughness treatment.

[0064] Step S4: placing the wafer 30 in the groove 12 of the body 11 and performing an epitaxial process under light heating.

[0065] The wafer 30 is transferred into an epitaxial process chamber, such as the process chamber of the above-mentioned epitaxial equipment, and is placed in the groove 12 of the body 11 of the susceptor 10. The wafer 30 and the susceptor 10 are heated simultaneously by the heating lamp 20 provided in the process chamber, so that the wafer 30 is subjected to an epitaxial process such as low-pressure chemical vapor deposition at a certain temperature.

[0066] At this time, the diffuse reflection effect of the edge surface 13 of the main body 11 other than the groove 12 which has been roughened is utilized to improve the absorption capacity of the edge surface 13 of the main body to the heat of light, thereby increasing the temperature of the edge of the main body 11 other than the groove 12, and making the temperature of the edge of the wafer 30 consistent with the temperature of the center through heat conduction. Therefore, the difference in thickness of the deposited film layer at the center and edge of the wafer 30 in the epitaxial process can be reduced, thereby improving the uniformity of the thickness of the deposited film layer on the surface of the wafer 30, thereby effectively improving the uniformity within the wafer.

[0067] In summary, the present invention forms a thermal conductive layer 14 of, for example, silicon carbide, with a certain thickness and roughness on the edge surface of the main body 11 outside the groove 12, so that the thermal conductive layer 14 has a surface morphology that diffuses the heating light, thereby making the new edge surface 13 of the main body 11 outside the groove 12 have a morphology that diffuses the heating light. The method is simple, compatible with existing processes, and can maintain the diffuse reflection morphology even after chamber maintenance, thereby ensuring durability and process stability, thereby significantly improving the yield.

[0068] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A susceptor for improving the uniformity of epitaxial process wafers, characterized in that: include: A main body, wherein a groove is provided on the surface of the main body, and the surface of the main body other than the groove has a morphology of diffuse reflection of heating light, so that when a processing object is placed in the groove for epitaxial process, the diffuse reflection of light by the surface of the main body other than the groove is utilized to improve the heat absorption capacity, and the temperature of the edge of the processing object is made consistent with the temperature of the center through conduction.

2. The susceptor for improving uniformity within an epitaxial process wafer according to claim 1, characterized in that: The roughness of the surface of the body outside the groove is higher than the roughness of the inner wall surface of the groove.

3. The susceptor for improving uniformity within an epitaxial process wafer according to claim 1, characterized in that: The surface of the body other than the groove is a surface having a heat-conducting layer, and the heat-conducting layer has a surface morphology that diffusely reflects the heating light; the inner wall surface of the groove is a surface without the heat-conducting layer, or the inner wall surface of the groove is a surface without any heterogeneous material layer.

4. The susceptor for improving uniformity within an epitaxial process wafer according to claim 3, characterized in that: The heat conducting layer material comprises silicon carbide.

5. The susceptor for improving uniformity within an epitaxial process wafer according to claim 3, characterized in that: The roughness of the heat-conducting layer is 0.14-0.15 μm; and / or the thickness of the heat-conducting layer is 1.5-2.5 μm.

6. An epitaxial device, characterized in that: It comprises a process chamber, in which is arranged a susceptor for improving uniformity within an epitaxial process wafer according to any one of claims 1 to 5.

7. A method for improving the uniformity of epitaxial process wafer, characterized in that: include: A process chamber is provided, wherein a base is provided in the process chamber, wherein the base comprises a body, and a groove is provided on the surface of the body for placing a processing object; The surface of the body other than the groove is processed so as to have a morphology that forms diffuse reflection of heating light; The processing object is placed in the groove for epitaxial process and light heating. The diffuse reflection of light by the surface of the main body outside the groove is utilized to improve the heat absorption capacity, so as to increase the edge temperature of the main body outside the groove, and make the temperature of the edge of the processing object consistent with the temperature of the center through conduction.

8. The method for improving the uniformity of epitaxial process wafer according to claim 7, characterized in that: The processing of the surface of the body other than the groove specifically includes: forming a heat-conducting layer on the surface of the body other than the groove, so that the heat-conducting layer has a surface morphology that diffuses the heating light, so that the surface of the body other than the groove has a morphology that diffuses the heating light, and the inner wall surface of the groove does not have the heat-conducting layer; or, the processing of the surface of the body other than the groove specifically includes: forming a heat-conducting layer on the surface of the body other than the groove, so that the heat-conducting layer has a surface morphology that diffuses the heating light, so that the surface of the body other than the groove has a morphology that diffuses the heating light, and the inner wall surface of the groove does not have any heterogeneous material layer.

9. The method for improving uniformity within an epitaxial process wafer according to claim 8, characterized in that: A silicon carbide thermal conductive layer with a thickness of 1.5 to 2.5 μm is formed on the surface of the body outside the groove by a magnetron sputtering process; and / or, a thermal conductive layer is formed on the surface of the body outside the groove so that the roughness of the surface of the body outside the groove is higher than the roughness of the inner wall surface of the groove.

10. The method for improving the uniformity of epitaxial process wafer according to claim 9, characterized in that: Also includes: The formed silicon carbide heat conducting layer is thermally annealed to make the roughness of the silicon carbide heat conducting layer reach 0.14-0.15 μm.

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