Bearing device and semiconductor process equipment

Abstract

The invention provides a bearing device and semiconductor process equipment. The bearing device is provided with an inner cavity used for being communicated with a gas source, the surface of one side, facing the wafer, of the bearing device is provided with a plurality of gas holes communicated with the inner cavity, the gas holes are used for spraying heating gas to the back face of the wafer, and the gas holes are evenly distributed in the bearing device. According to the bearing device, the inner cavity communicated with the gas source and the uniformly distributed gas holes are formed, and gas for heating can be uniformly blown out to the back surface of the wafer through the gas holes, so that heat is effectively and uniformly conducted to the wafer, uniform heating of the back surface of the wafer is realized, the drying replacement effect of isopropanol on the front surface of the wafer is improved, and the product yield is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a carrier device and semiconductor process equipment. Background Art

[0002] In the cleaning process involving the front-end process, cleaning, drying, and controlling the formation of watermarks on the wafer surface are important factors in determining the wafer yield. Among them, using isopropyl alcohol to perform Marangoni drying on the wafer surface is the most common wafer drying method. In single-wafer cleaning, in order to improve the replacement efficiency of isopropyl alcohol on the wafer surface, the back of the wafer is heated while spraying isopropyl alcohol on the front of the wafer. A key step in heating the back of the wafer is to ensure uniform heating of the entire wafer, ensuring uniform reaction of the isopropyl alcohol on the front of the wafer while preventing uneven heating of the wafer that may cause cracks.

[0003] The conventional method for heating the backside of a wafer is to fix the wafer front-side up on a horizontal chuck. The chuck rotates the wafer at high speed while simultaneously spraying 70°C ultrapure water near the center of the chuck onto the backside of the wafer. The hot water heats the wafer by contacting the backside. The high-speed rotation of the wafer generates centrifugal force, which propels the ultrapure water outward from the center of the wafer. During this process, the ultrapure water gradually heats the wafer from the inside out before finally separating from the wafer.

[0004] Since ultrapure water is gradually heated from the center of the wafer to the periphery, this will cause the temperature near the center of the wafer to be higher and the temperature near the edge of the wafer to be lower, resulting in uneven heating. Summary of the Invention

[0005] The present invention aims to at least solve the problem of uneven heating of a wafer by a chuck in the prior art, and proposes a carrier device and semiconductor process equipment.

[0006] In order to achieve the purpose of the present invention, a carrying device is provided for fixing a wafer. The carrying device is provided with an inner cavity for connecting to a gas source. The surface of the carrying device facing the wafer has a plurality of air holes connected to the inner cavity. The air holes are used to spray heating gas onto the back side of the wafer. The plurality of air holes are evenly distributed on the carrying device.

[0007] Optionally, the supporting device includes: a top cover, which is provided with the air hole; a base, which is rotatably arranged, the top cover is arranged on the base, the inner cavity is located between the top cover and the base, and a mounting hole connected to the inner cavity is provided at the rotation center position of the base, and the mounting hole is used to install an air inlet pipe connected to the air source.

[0008] Optionally, a polymerization groove is provided on a side of the top cover facing the wafer, and at least part of the air holes are located in the polymerization groove.

[0009] Optionally, the walls of the polymerization tank are inclined, and the distance between the walls of the polymerization tank gradually increases from the bottom of the polymerization tank to the slot opening.

[0010] Optionally, the air holes include: a plurality of first air holes distributed at the bottom of the polymerization tank, the first air holes being used to blow air toward the area where the wafer undergoes a drying process; and a plurality of second air holes distributed on the walls of the polymerization tank, the second air holes being used to blow air toward the edge of the wafer.

[0011] Optionally, the shape of the notch of the polymerization groove matches the outline of the wafer, the second air holes are distributed at intervals along the circumference of the groove wall of the polymerization groove, and the second air holes are located near the notch of the polymerization groove.

[0012] Optionally, the air holes further include: a plurality of third air holes, which are arranged on the outer peripheral side of the polymerization tank, and the third air holes are used to blow air toward the edge of the wafer.

[0013] Optionally, a connecting portion is provided on the base, and the connecting portion is located on the outer peripheral side of the mounting hole. An air groove corresponding to the connecting portion is provided on the top cover, and the air groove is connected to the connecting portion. The air groove and the base form the inner cavity, and the air hole is connected to the air groove.

[0014] Optionally, the top cover has a first side facing the base and a second side facing away from the base, the air groove is arranged on the first side of the top cover, and the air holes are arranged on the second side of the top cover; a plurality of diversion chambers are arranged between the first side and the second side of the top cover, and the plurality of diversion chambers are circumferentially spaced apart on the outside of the air groove, each of the diversion chambers is connected to the air groove, and each of the diversion chambers is respectively connected to a plurality of the air holes.

[0015] Optionally, a plurality of guide channels are provided between the first side and the second side of the top cover, the guide channels extend radially, and the plurality of guide channels are circumferentially spaced and distributed on the outer peripheral side of the air groove, the diverter cavity is located between the guide channel and the air groove, each of the diverter cavity is connected to the plurality of guide channels, each of the guide channels is connected to the plurality of air holes, and each of the diverter cavity is connected to the plurality of air holes through the guide channel.

[0016] Optionally, all the pores are divided into a plurality of pore groups, the pore groups are arranged in a one-to-one correspondence with the guide channels, and the pores in the same pore group are connected to the same guide channel.

[0017] Optionally, the supporting device further includes: a first heating device, arranged in the guide channel, for heating the gas in the guide channel; and / or a second heating device, arranged at the position of the diversion cavity, for heating the gas in the diversion cavity.

[0018] According to a second aspect of the present invention, a semiconductor process equipment is also disclosed, comprising: a process chamber and the above-mentioned carrying device.

[0019] The carrier device of the present invention is provided with an inner cavity connected to the gas source and evenly distributed air holes, and can evenly blow heated gas to the back side of the wafer through the air holes, thereby effectively and evenly conducting heat to the wafer, achieving uniform heating of the back side of the wafer, improving the drying and replacement effect of isopropyl alcohol on the front side of the wafer, and improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of a top cover of a chuck in the prior art;

[0021] Figure 2 It is a structural schematic diagram of the base of the chuck in the prior art;

[0022] Figure 3 Schematic diagram of the structure of the carrying device according to an embodiment of the present invention;

[0023] Figure 4 is a cross-sectional view of a carrying device according to an embodiment of the present invention;

[0024] Figure 5 for Figure 4 A partial enlarged view of part A;

[0025] Figure 6 A three-dimensional view of a first side of a top cover of a carrying device according to an embodiment of the present invention;

[0026] Figure 7 is a cross-sectional view of a first side of a top cover of a carrying device according to an embodiment of the present invention;

[0027] List of reference numerals:

[0028] 10. Inner cavity; 20. Top cover; 21. Air hole; 21a. First air hole; 21b. Second air hole; 21c. Third air hole; 22. Aggregation groove; 221. Groove wall; 222. Groove bottom; 223. Notch; 23. Air groove; 231. Diverter hole; 24. Diverter cavity; 25. Guide channel; 30. Base; 31. Mounting hole; 32. Connecting part; 40. Drive shaft; 50. Inlet pipe; 51. Plug; 511. Flow hole; 60. Bearing. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the technical solution of the present invention, the carrier device and semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0030] In the cleaning process involving the front-end process, cleaning, drying, and controlling the formation of watermarks on the wafer surface are important factors in determining the wafer yield. Among them, using isopropyl alcohol to perform Marangoni drying on the wafer surface is the most common wafer drying method. In single-wafer cleaning, in order to improve the replacement efficiency of isopropyl alcohol on the wafer surface, the back of the wafer is heated while spraying isopropyl alcohol on the front of the wafer. A key step in heating the back of the wafer is to ensure uniform heating of the entire wafer, ensuring uniform reaction of the isopropyl alcohol on the front of the wafer while preventing uneven heating of the wafer that may cause cracks.

[0031] The existing chuck used in the front-end single-wafer cleaning machine includes: a top cover 1 and a base 2. Among them, Figure 1 The middle is the top cover 1 of the chuck, which is provided with claws 4 for clamping the wafer. The top cover 1 is fixedly connected to the base 2 by bolts 3; Figure 2 It is the base 2 of the chuck, wherein the center position of the base 2 is connected and fixed to the hollow tube 6 through a bearing 5 so that the base 2 can rotate relative to the hollow tube 6. A nozzle 7 is provided at the end of the hollow tube 6, and the hollow tube 6 is connected to the ultrapure water source to provide ultrapure water for heating.

[0032] In the current actual isopropyl alcohol replacement process, the wafer first needs to be fixed on a horizontally arranged chuck with the front side facing up through the clamping claws 4, and the wafer is driven by the chuck to rotate at high speed. After the rotation speed reaches the target rotation speed that can throw the liquid to the recovery layer of the process chamber, since a bearing 5 is provided between the hollow tube 6 and the base 2, when the base 2 rotates, the hollow tube 6 located at the center of the base 2 is stationary, and the nozzle 7 thereon will spray 70 degrees Celsius ultrapure water toward the rotating wafer, and heat the wafer by contacting the back of the wafer with hot water. Since the high-speed rotation of the wafer generates centrifugal force, the ultrapure water can be thrown from the center of the wafer to the outside. In this process, the ultrapure water gradually heats the wafer from the inside out, and finally separates from the wafer, thereby improving the drying efficiency of the isopropyl alcohol.

[0033] However, this approach has many shortcomings:

[0034] First, since ultrapure water is gradually heated from the center of the wafer to the periphery, this will cause the temperature near the center of the wafer to be higher and the temperature near the edge of the wafer to be lower, resulting in uneven heating.

[0035] Secondly, since ultrapure water is used for heating, and ultrapure water is a liquid, to prevent the water on the back of the wafer from dripping onto the chuck under the influence of gravity and forming a short circuit, the wafer must maintain a certain rotation speed to provide sufficient centrifugal force to dislodge the water. In other words, the wafer rotation speed cannot be too low. Therefore, when the isopropyl alcohol replacement requires the wafer to be stationary, hot water cannot be used for heating, so the use of ultrapure water heating method is quite restrictive.

[0036] Again, the flow rate of 70-degree Celsius ultrapure water is strictly limited when it is sprayed. Too large a flow rate will cause the water to crawl back to the front of the wafer, affecting the wafer quality; and too small a flow rate cannot guarantee effective heating of the wafer. Therefore, it is more difficult to control.

[0037] Finally, since 70-degree Celsius ultrapure water needs to be sprayed onto the back of the wafer, the process chamber needs to be designed with more layers to collect the hot water sprayed from the back. In addition, the water will inevitably splash back on the back of the high-speed rotating wafer, posing a hidden danger to the chuck motor and various electrical components below.

[0038] Therefore, in order to solve the above problems, Figure 3 The embodiment shown in the figure discloses a carrier device for fixing a wafer. Figure 4 As shown, the carrier device is provided with an inner cavity 10 for communicating with a gas source, and the surface of the carrier device facing the wafer has a plurality of air holes 21 connected with the inner cavity 10, and the air holes 21 are used to spray heating gas onto the back of the wafer, and the plurality of air holes 21 are evenly distributed on the carrier device.

[0039] During use, the heating gas enters the inner cavity 10 and is blown toward the back of the wafer through the air holes 21 connected to the inner cavity 10, thereby heating the wafer. Since there are multiple air holes 21 and they are evenly distributed on the carrying device, the gas blown out is also uniform, so the wafer can be evenly heated by the gas.

[0040] The carrier device of the present invention is provided with an inner cavity 10 connected to the gas source and evenly distributed air holes 21, and can evenly blow heating gas to the back side of the wafer through the air holes 21, thereby effectively and evenly conducting heat to the wafer, achieving uniform heating of the back side of the wafer, improving the drying and replacement effect of isopropyl alcohol on the front side of the wafer, and improving the product yield.

[0041] It should be noted that the carrying device is a chuck for cleaning wafers, which can be used on a cleaning machine to clean the front or back of the wafer. The chuck in this embodiment is used for the isopropyl alcohol cleaning process of the wafer to clean the front of the wafer.

[0042] Specifically, in Figure 3 and 4As shown, in this embodiment, the supporting device includes: a top cover 20 and a base 30. The base 30 is fixedly connected to the top cover 20, and the top cover 20 is provided with an air hole 21. The base 30 is rotatably arranged, and the top cover 20 is placed on the base 30. The inner cavity 10 is located between the top cover 20 and the base 30. The base 30 is provided with a mounting hole 31 at the rotation center position, which is connected to the inner cavity 10. The mounting hole 31 is used to install an air inlet pipe 50 connected to the air source.

[0043] The carrying device of the present invention is fixedly connected to the base 30 through the top cover 20, so that an inner cavity 10 connected to the gas source is formed between the top cover 20 and the base 30. After the heating gas enters the inner cavity 10 through the air inlet pipe 50 installed in the mounting hole 31, it can be ejected through the air holes 21 to heat the wafer. Since the air holes 21 are evenly distributed, even if the carrying device is in a stationary state, the heating gas can be evenly distributed on the wafer to heat it, thereby adapting to the heating situation when the wafer is in a stationary state.

[0044] At the same time, the base 30 is fixedly connected to the drive shaft 40, which can drive the base 30 to rotate. The base 30 is fixedly connected to the top cover 20 by multiple bolts distributed along the circumference, so that the base 30 can drive the top cover 20 to rotate synchronously. Therefore, while the carrier rotates, it can also spray heating gas onto the wafer. By rotating the carrier, the process liquid on the front surface can be thrown to the surrounding area, improving the effect of the drying process.

[0045] like Figure 3 and 4 As shown, a polymerization groove 22 is provided on the side of the top cover 20 facing the wafer, and at least part of the air holes 21 are located in the polymerization groove 22. Figure 3 It is not difficult to see that in this embodiment, most of the pores 21 are arranged in the polymerization tank 22, and a small portion of the pores 21 are arranged outside the polymerization tank 22. By providing the polymerization tank 22, the gas is evenly gathered in the polymerization tank 22. The gathered gas contacts the back of the wafer and heats it, thereby preventing the gas from diffusing too quickly and improving the heating effect.

[0046] It is understandable that, in order to improve the gathering effect, the shape of the notch 223 of the polymerization tank 22 matches the outline of the wafer, that is to say, the orthographic projection of the notch 223 of the polymerization tank 22 on the plane where the wafer is located is also circular, and is concentric with the wafer. The circle of the notch 223 of the polymerization tank 22 overlaps with the wafer, and can also be slightly larger or slightly smaller than the wafer. In this way, the region where the heating gas is gathered can substantially cover the entire wafer, thereby ensuring the heating effect. In addition, in the present embodiment, the groove bottom 222 of the polymerization tank 22 corresponds to the boundary of the region of the isopropyl alcohol drying process above the wafer, that is, corresponds to the liquid injection position, thereby can evenly heat the liquid.

[0047] like Figure 3 As shown, the structure of the polymerization tank 22 is trumpet-shaped, that is, the groove wall 221 of the polymerization tank 22 is inclined, and the distance between the groove walls 221 of the polymerization tank 22 gradually increases from the groove bottom 222 to the groove mouth 223 of the polymerization tank 22. In this way, the gas aggregation can be maximized, thereby improving the heating effect.

[0048] like Figure 3 As shown, the air holes 21 include: a first air hole 21a, a second air hole 21b, and a third air hole 21c. There are multiple first air holes 21a, second air holes 21b, and third air holes 21c. The first air holes 21a are located at the bottom 222 of the polymerization tank 22 and are used to blow air toward the area where the wafers are dried. The second air holes 21b are located on the tank wall 221 of the polymerization tank 22 and are spaced circumferentially along the tank wall 221. The second air holes 21b are located near the notch 223 of the polymerization tank 22 and are used to blow air toward the edge of the wafer. The third air holes 21c are located on the outer periphery of the polymerization tank 22 and are used to blow air toward the edge of the wafer.

[0049] By setting the first air hole 21a, the carrying device can blow air to the area where the wafer is subjected to the drying process through the first air hole 21a, so that the isopropyl alcohol process area of ​​the wafer can be evenly heated, and by setting the second air hole 21b and the third air hole 21c, it can be used to prevent the process liquid on the front side of the wafer from being sucked into the bottom of the wafer due to the Venturi effect. When the process liquid is about to be sucked into the bottom of the wafer, since the second air hole 21b and the third air hole 21c continuously blow air toward the edge of the wafer, the process liquid on the front side of the wafer will be blown away by the airflow blown out by the first air hole 21a and the third air hole 21c after flowing to the edge of the wafer, thereby preventing the process liquid from entering the bottom of the wafer, thereby improving the wafer quality.

[0050] It should be noted that in this embodiment, the top cover 20 is provided with the third air holes 21c, and the third air holes 21c are located outside the aggregation tank 22. However, this is not restrictive. In some other embodiments not shown in the figures, the third air holes 21c may not be provided. In other words, all air holes 21 are located within the aggregation tank 22. Such a situation also falls within the scope of protection of the present invention.

[0051] like Figure 4 and Figure 5As shown, the base 30 has a first side facing the top cover 20 and a second side facing away from the top cover 20. In order to achieve rotation of the base 30 while also being connected to the air source, in this embodiment, the drive shaft 40 is a hollow shaft connected to the second side of the base 30. The mounting hole 31 extends from the first side of the base 30 to the second side of the base 30, and the mounting hole 31 is connected to the interior of the drive shaft 40. An air inlet pipe 50 is also provided inside the drive shaft 40. The air inlet pipe 50 is disposed in the mounting hole 31, and a first end of the air inlet pipe 50 is connected to the inner cavity 10, and a second end of the air inlet pipe 50 is connected to the air source. To prevent the base 30 from rotating with the intake pipe 50, the intake pipe 50 is connected to the inner wall of the mounting hole 31 via a bearing 60, allowing the base 30 and the intake pipe 50 to rotate relative to each other. While the drive shaft 40 rotates the base 30, the intake pipe 50 can remain stationary, thereby preventing the base 30 from rotating the intake pipe 50, which could cause the intake pipe 50 to rotate relative to the gas source and damage or leak the pipeline between the two, thereby improving the reliability of gas delivery. Furthermore, to facilitate the distribution of heating gas to each air hole 21, the first end of the intake pipe 50 extends into the inner cavity 10, and a plug 51 with multiple flow holes 511 is installed at the first end of the intake pipe 50. The flow holes 511 on the plug 51 are evenly distributed around the circumference, so that the heating gas can be evenly diffused into the inner cavity 10.

[0052] like Figure 5 As shown, a connecting portion 32 protruding toward the top cover 20 is provided on the first side of the base 30. The connecting portion 32 is annular and surrounds the outer periphery of the mounting hole 31. Figure 6 As shown, the top cover 20 is provided with an air groove 23 corresponding to the connecting portion 32 , the air groove 23 is connected to the connecting portion 32 , the air groove 23 and the base 30 form an inner cavity 10 , and the air hole 21 is communicated with the air groove 23 .

[0053] In this embodiment, an external thread is provided on the peripheral wall of the connecting portion 32, and an internal thread matching the external thread is provided on the groove wall of the air groove 23. During assembly, the air groove 23 and the connecting portion 32 can be connected together by threads. While the air groove 23, the connecting portion 32 and the first side of the base 30 form an inner cavity 10, the air groove 23 and the connecting portion 32 can also serve as a preliminary connection between the top cover 20 and the base 30, making it convenient to subsequently connect the top cover 20 and the base 30 by bolts, thereby improving assembly efficiency. It is a typical multi-purpose product.

[0054] It is understandable that in order to prevent air leakage between the groove wall of the air groove 23 and the connecting portion 32 , a sealing structure, such as a sealing ring or a sealing gasket, may be provided between the air groove 23 and the connecting portion 32 to improve airtightness.

[0055] It should be noted that, in the present embodiment, the air groove 23 and the connecting portion 32 are connected by threaded fitting, but this is not restrictive. In some other embodiments not shown in the figures, the air groove 23 and the connecting portion 32 may also be connected in other ways, for example: by snap-fitting or by limiting fitting with a spring pin. In other words, any method that can fix the air groove 23 and the connecting portion 32 is within the scope of protection of the present invention.

[0056] It should also be noted that, in this embodiment, the inner cavity is a structure enclosed by the air groove 23 provided on the top cover 20 and the connecting portion 32, but this is not restrictive. In some other embodiments not shown in the figures, a cylindrical connecting member may be provided between the top cover 20 and the base 30, with one end of the connecting member connected to the top cover 20 and the other end connected to the connecting portion 32 on the base 30, so that the top cover 20, the connecting member, and the base 30 collectively enclose an inner cavity. In other words, as long as it does not violate the inventive concept of the present invention, any structure that can form an inner cavity between the top cover 20 and the base 30 is within the scope of protection of the present invention.

[0057] In this embodiment, the top cover 20 has a first side facing the base 30 and a second side facing away from the base 30. Figure 6 As shown, the air groove 23 is provided on a first side of the top cover 20, that is, the side of the top cover 20 facing the base 30 and assembled with the base 30; and Figure 3 The middle portion is the second side of the top cover 20 , that is, the side for clamping the wafer during the wafer drying process. The polymerization groove 22 and the air hole 21 are arranged on the second side of the top cover 20 .

[0058] In this embodiment, a plurality of diversion cavities 24 and a plurality of flow guiding channels 25 are provided between the first side and the second side of the top cover 20. Figure 7 As shown in the cross-sectional view of the first side of the top cover, a plurality of diverter cavities 24 are circumferentially spaced apart on the outside of the air groove 23, each diverter cavity 24 is connected to the air groove 23, the guide channel 25 extends radially, and the plurality of guide channels 25 are circumferentially spaced apart on the outer peripheral side of the air groove 23, the diverter cavity 24 is located between the guide channel 25 and the air groove 23, each diverter cavity 24 is connected to a plurality of guide channels 25, each guide channel 25 is connected to a plurality of air holes 21, and each diverter cavity 24 is connected to a plurality of air holes 21 through the guide channel 25.

[0059] It is understood that in order to achieve communication between the gas groove 23 and the diversion cavity 24, a diversion hole 231 corresponding to the diversion cavity 24 is provided on the groove wall of the gas groove 23 (see Figure 5 ).exist Figure 7 In the embodiment shown, there are four diversion chambers 24, which are evenly distributed on the outer periphery of the air groove 23. Four diversion holes 231 are also provided on the inner wall of the air groove 23 (see FIG. Figure 5 ), the air groove 23 is connected to the corresponding diversion cavity 24 through the diversion hole 231.

[0060] After the top cover 20 is assembled on the base 30, when in use, Figure 5 As shown, the gas in the gas source enters the inner cavity 10 through the inlet pipe 50 and the flow hole 511 on the plug 51 in sequence. After the heated gas enters the inner cavity 10, it will first pass through the diversion hole 231 (see Figure 5 ) into the four diversion chambers 24 to complete the first diversion, then, please combine Figure 7 The gas in each diversion cavity 24 then flows into the corresponding and connected guide channels 25 to complete the second diversion, and finally is blown out of the air holes 21 connected to the guide channels 25 to complete the third diversion. By providing the diversion cavity 24 and the guide channels 25 in the top cover 20, the carrier device of the present invention can gradually divert the heating gas multiple times, so that the heating gas can be distributed as evenly as possible to each air hole 21, thereby maintaining the most consistent airflow in each air hole 21, thereby achieving uniform heating of the wafer.

[0061] like Figure 7 As shown, all pores 21 are divided into multiple pore groups. These pore groups are arranged in a one-to-one correspondence with the flow channels 25. The pores 21 in the same pore group are connected to the same flow channel 25. Each pore group includes a first pore 21a, a second pore 21b, and a third pore 21c. The first pore 21a is closest to the center of the top cover 20 in each pore group, located on the bottom 222 of the polymerization tank 22. There are multiple first pores 21a in each pore group, arranged in a row from the inside out. Within each pore group, outside the first pore 21a are second pores 21b located on the wall 221 of the polymerization tank 22. At the outermost edge of each pore group is the third pore 21c. The first, second, and third pores 21a, 21b, and 21c are arranged in a row along the extension direction of the flow channel 25 to ensure uniform distribution of the pores 21, thereby achieving more uniform heating of the wafer.

[0062] In this embodiment, to ensure the temperature of the heating gas, the carrier device further includes: a first heating device and a second heating device. The first heating device is disposed within the guide channel 25 and is used to heat the gas within the guide channel 25. The second heating device is disposed at the position of the diversion chamber 24 and is used to heat the gas within the diversion chamber 24. By providing the first heating device and the second heating device, the gas of the gas source can be heated and continuously heated during the gas flow process, thereby improving the stability of the gas temperature, avoiding excessively low temperature or uneven gas temperature, and improving the uniformity of wafer heating.

[0063] In this embodiment, the first heating device and the second heating device can be heating wires, which can be respectively arranged in the guide channel 25 and the diversion cavity 24, or can be arranged at positions corresponding to the guide channel 25 and the diversion cavity 24 on the base 30. Of course, the first heating device and the second heating device can also be other heating elements. As long as the elements can heat the gas, they are within the protection scope of the present invention.

[0064] It should be noted that although both the first and second heating devices are provided in this embodiment, this is not restrictive. In some other embodiments not shown in the figures, only one of them may be provided. Of course, if the gas source is heated gas, then the first and second heating devices are not required. In other words, in some other embodiments not shown in the figures, the first and second heating devices may not be provided.

[0065] It should also be noted that, in this embodiment, the gas source adopts a nitrogen source that can provide nitrogen.

[0066] According to a second aspect of the present invention, a semiconductor process equipment is also disclosed, comprising: a process chamber and the above-mentioned carrying device.

[0067] Compared with the prior art, the semiconductor process equipment of the present invention uses hot nitrogen to heat the back of the wafer, so there is no need to design more layers for the process chamber, making the process chamber structure simpler.

[0068] Secondly, the carrier device of the present invention is more friendly to the isopropyl alcohol process. When using this device for isopropyl alcohol process replacement, the lowest speed of the carrier device can be set to static. There is a wider adjustment space when performing the isopropyl alcohol replacement film reaction on the wafer surface, thereby forming a replacement film that better meets actual requirements. It is especially more friendly to special isopropyl alcohol drying steps (such as supercritical carbon dioxide drying).

[0069] Moreover, compared to hot water heating, using hot nitrogen heating does not pose risks to various electrical components in and below the carrier device, thereby improving the reliability of the machine. At the same time, because the gas collection area of ​​the carrier device top cover 20 is provided with a polymerization tank 22, compared to the previous situation where hot water heating cannot completely cover the back of the wafer, the hot nitrogen in the polymerization tank 22 can more completely cover the wafer area and evenly heat the wafer.

[0070] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A carrier device for fixing a wafer, characterized in that: The carrier device is provided with an inner cavity (10) for communicating with a gas source, and a surface of the carrier device on one side facing the wafer has a plurality of air holes (21) communicating with the inner cavity (10), the air holes (21) being used to spray heating gas onto the back side of the wafer, and the plurality of air holes (21) are evenly distributed on the carrier device.

2. The carrying device according to claim 1, characterized in that: The carrying device comprises: A top cover (20) provided with the air hole (21); The base (30) is rotatably arranged, the top cover (20) is covered on the base (30), the inner cavity (10) is located between the top cover (20) and the base (30), and a mounting hole (31) connected to the inner cavity (10) is provided at the rotation center position of the base (30), and the mounting hole (31) is used to install an air inlet pipe (50) connected to the air source.

3. The carrying device according to claim 2, characterized in that: A polymerization groove (22) is provided on the side of the top cover (20) facing the wafer, and at least part of the air holes (21) are located in the polymerization groove (22).

4. The carrying device according to claim 3, characterized in that: The groove wall (221) of the polymerization groove (22) is arranged obliquely, and the distance between the groove walls (221) of the polymerization groove (22) gradually increases in the direction from the groove bottom (222) of the polymerization groove (22) to the groove opening (223).

5. The carrying device according to claim 4, characterized in that: The pores (21) include: A plurality of first air holes (21a) are distributed at the bottom of the polymerization tank (22), wherein the first air holes (21a) are used to blow air toward a region where the wafer is subjected to a drying process; A plurality of second air holes (21b) are distributed on the groove wall of the polymerization groove (22), and the second air holes (21b) are used to blow air toward the edge of the wafer.

6. The carrying device according to claim 5, characterized in that: The notch shape of the polymerization groove (22) matches the outline of the wafer, the second air holes (21b) are distributed at intervals along the circumference of the groove wall of the polymerization groove (22), and the second air holes (21b) are located near the notch position of the polymerization groove (22).

7. The carrying device according to claim 6, characterized in that: The pore (21) further comprises: A plurality of third air holes (21c) are arranged on the outer peripheral side of the polymerization tank (22), and the third air holes (21c) are used to blow air toward the edge of the wafer.

8. The carrying device according to claim 2, characterized in that: The base (30) is provided with a connecting portion (32), the connecting portion (32) is located on the outer peripheral side of the mounting hole (31), the top cover (20) is provided with an air groove (23) corresponding to the connecting portion (32), the air groove (23) is connected to the connecting portion (32), the air groove (23) and the base (30) enclose the inner cavity (10), and the air hole (21) is connected to the air groove (23).

9. The carrying device according to claim 8, characterized in that: The top cover (20) has a first side facing the base (30) and a second side facing away from the base (30), the air groove (23) is arranged on the first side of the top cover (20), and the air hole (21) is arranged on the second side of the top cover (20); A plurality of flow-dividing chambers (24) are provided between the first side and the second side of the top cover (20); the plurality of flow-dividing chambers (24) are circumferentially spaced and distributed outside the air groove (23); each of the flow-dividing chambers (24) is in communication with the air groove (23); and each of the flow-dividing chambers (24) is in communication with the plurality of air holes (21).

10. The carrying device according to claim 9, characterized in that: A plurality of guide channels (25) are provided between the first side and the second side of the top cover (20), the guide channels (25) extending radially, the plurality of guide channels (25) being circumferentially spaced and distributed on the outer peripheral side of the air groove (23), the flow diversion cavity (24) being located between the flow diversion channel (25) and the air groove (23), each of the flow diversion cavity (24) being connected to the plurality of the flow diversion channels (25), each of the flow diversion channels (25) being connected to the plurality of the air holes (21), and each of the flow diversion cavity (24) being connected to the plurality of the air holes (21) via the flow diversion channel (25).

11. The carrying device according to claim 10, characterized in that: All the pores (21) are divided into a plurality of pore groups, the pore groups are arranged in one-to-one correspondence with the flow guiding channels (25), and the pores (21) in the same pore group are connected to the same flow guiding channel (25).

12. The carrying device according to claim 11, characterized in that: The carrying device also includes: a first heating device, arranged in the guide channel (25), for heating the gas in the guide channel (25); and / or The second heating device is arranged at the location of the diversion chamber (24) and is used to heat the gas in the diversion chamber (24).

13. A semiconductor process equipment, characterized in that: include: A process chamber and a carrier device according to any one of claims 1 to 12.

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