Boron deposition mass calculation method, device and storage medium for reactor

Abstract

The present application provides a method, device and storage medium for calculating the boron deposition mass of a reactor, relating to the technical field of nuclear reactors. The method for calculating the boron deposition mass of the reactor provided by the present application includes: calculating the deposition mass of boron-lithium compounds inside the fouling; calculating the boron adsorption mass on the surface of the fouling; summing the deposition mass of the boron-lithium compounds and the boron adsorption mass to obtain the boron deposition mass. The present application considers two boron deposition mechanisms, namely, the deposition of boron-lithium compounds and boron adsorption, combines these two deposition mechanisms to calculate the total boron deposition mass, realizes the calculation of the boron deposition mass of the reactor, and makes the calculation result more accurate.

Description

Technical Field

[0001] This application relates to the technical field of nuclear reactors, and particularly to a method, device, and storage medium for calculating the boron deposition mass in a reactor. Background Art

[0002] Axial power shift (CIPS) and local cladding corrosion (CILC) caused by reactor core fouling will affect the safety and economy of reactor operation. At the same time, it is also one of the key challenges in improving the performance of pressurized water reactors, which has attracted more and more attention in the nuclear power industry. The phenomena caused by reactor core fouling are important influencing factors for the safety and economy of reactor operation, and the risk assessment of reactor core fouling may become an important issue that the industry will focus on in the future.

[0003] During reactor operation, corrosion products (such as nickel and iron) on the coolant system pipes will be released into the coolant and deposit on the surface of the fuel assembly cladding to form fouling. Boron and lithium hydroxides accumulate in the pore-like gaps of the fouling. When boron accumulates to a certain extent, it will precipitate onto the fouling, resulting in a decrease in the power of the upper part of the fuel assembly. As a result, the power peak will shift downward, that is, the CIPS phenomenon occurs. Summary of the Invention

[0004] In view of this, this application provides a method, device, and storage medium for calculating the boron deposition mass in a reactor, realizing the calculation of the boron deposition mass in the reactor, so as to accurately evaluate the CIPS risk.

[0005] In a first aspect, this application provides a method for calculating the boron deposition mass in a reactor, including:

[0006] Calculating the deposition mass of boron-lithium compounds inside the fouling;

[0007] Calculating the boron adsorption mass on the surface of the fouling;

[0008] Adding the deposition mass of the boron-lithium compounds and the boron adsorption mass to obtain the boron deposition mass.

[0009] In a possible implementation, the calculating the deposition mass of boron-lithium compounds inside the fouling includes:

[0010] Obtaining the thickness of the boron deposition layer inside the fouling;

[0011] Calculating the deposition mass of the boron-lithium compounds based on the thickness of the boron deposition layer, the boron concentration in the coolant, and the concentration factor.

[0012] In a possible implementation, the obtaining the thickness of the boron deposition layer inside the fouling includes:

[0013] Obtaining the concentration of the target substance inside the fouling;

[0014] The thickness of the boron deposition layer is obtained based on the concentration of the target substance, the solubility of the deposited boron-lithium compound, and the fouling thickness.

[0015] In a possible implementation, the obtaining of the concentration of the target substance inside the fouling includes:

[0016] Dividing the fouling into multiple layers of grids based on the fouling thickness;

[0017] Calculating the concentration of the target substance at the grid;

[0018] The obtaining of the thickness of the boron deposition layer based on the concentration of the target substance, the solubility of the deposited boron-lithium compound, and the fouling thickness includes:

[0019] When the concentration of the target substance at the grid exceeds the solubility of the deposited boron-lithium compound, the thickness of the boron deposition layer is obtained based on the fouling thickness and the position of the grid.

[0020] In a possible implementation, the calculating of the concentration of the target substance at the grid includes:

[0021] Constructing a mass flow convection equation for the liquid phase inside the fouling based on the diffusion coefficient of the target substance in the liquid phase inside the fouling, the total mass flow rate of the target substance at the grid in the liquid phase inside the fouling, and the mass concentration of the target substance at the grid in the liquid phase inside the fouling;

[0022] Constructing a mass flow convection equation for the vapor phase inside the fouling based on the diffusion coefficient of the target substance in the vapor phase inside the fouling, the total mass flow rate of the target substance at the grid in the vapor phase inside the fouling, and the mass concentration of the target substance at the grid in the vapor phase inside the fouling;

[0023] Based on the mass flow convection equation for the liquid phase inside the fouling, the mass flow convection equation for the vapor phase inside the fouling, the relationship between the total mass flow rate of the target substance at the grid in the liquid phase inside the fouling and the total mass flow rate of the target substance at the grid in the vapor phase inside the fouling, and the relationship between the mass concentration of the target substance at the grid in the liquid phase inside the fouling and the mass concentration of the target substance at the grid in the vapor phase inside the fouling, solving to obtain the mass concentration of the target substance at the grid in the liquid phase inside the fouling, and taking the obtained mass concentration of the target substance at the grid in the liquid phase inside the fouling as the concentration of the target substance at the grid.

[0024] In a possible implementation, the obtaining of the thickness of the boron deposition layer inside the fouling further includes:

[0025] Obtaining the solubility of the deposited boron-lithium compound based on the temperature inside the fouling.

[0026] In one possible implementation, calculating the boron adsorption mass on the fouling surface includes:

[0027] Obtaining the boron concentration on the cladding surface;

[0028] Calculating the boron adsorption mass based on the boron concentration on the cladding surface and the fouling mass.

[0029] In one possible implementation, obtaining the boron concentration on the cladding surface includes:

[0030] Calculating the boron concentration on the cladding surface based on the enrichment factor and the boron concentration in the coolant.

[0031] In a second aspect, the present application provides a computing device, including:

[0032] At least one processor; and

[0033] At least one memory storing instructions, which when executed alone or jointly by the at least one processor, cause the computing device to execute the method described in the first aspect.

[0034] In a third aspect, the present application provides a computer storage medium storing instructions, which when executed alone or jointly by at least one processor of a computing device, cause the computing device to execute the method described in the first aspect.

[0035] Compared with the prior art, the present application has the following advantages:

[0036] The method for calculating the boron deposition mass in a reactor provided by the present application includes: calculating the deposition mass of boron-lithium compounds inside the fouling; calculating the boron adsorption mass on the fouling surface; summing the deposition mass of boron-lithium compounds and the boron adsorption mass to obtain the boron deposition mass. The present application considers two boron deposition mechanisms, namely, the deposition of boron-lithium compounds and boron adsorption, combines these two deposition mechanisms to calculate the total boron deposition mass, realizes the calculation of the boron deposition mass in the reactor, and makes the calculation result more accurate, so as to more accurately evaluate the CIPS risk. Description of the Drawings

[0037] The inclusion of the drawings is to provide a further understanding of the present application. They are incorporated and constitute a part of the present application. The drawings illustrate the embodiments of the present application and, together with this specification, serve to explain the principles of the present application. In the drawings:

[0038] Figure 1 is a schematic flowchart of a method for calculating the boron deposition mass in a reactor provided by an embodiment of the present application;

[0039] Figure 2 is a schematic diagram of fouling grid division provided by an embodiment of the present application;

[0040] Figure 3 It is a schematic structural diagram of a computing device provided by an embodiment of the present application. Detailed implementation manners

[0041] To more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings required for the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application. For those of ordinary skill in the art, without creative efforts, the present application can also be applied to other similar scenarios based on these drawings. Unless obvious from the language context or otherwise stated, the same reference numerals in the figures represent the same structure or operation.

[0042] As shown in the present application, unless the context clearly indicates an exceptional situation, words such as "a", "an", "one" and / or "the" do not specifically refer to the singular, but may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0043] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" mean a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that the "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures or characteristics in one or more embodiments of the present application can be combined appropriately.

[0044] Unless otherwise specifically stated, the relative arrangements, numerical expressions and values of the components and steps described in these embodiments do not limit the scope of the present application. At the same time, it should be understood that for the convenience of description, the dimensions of the various parts shown in the drawings are not drawn according to the actual proportional relationship. Technologies, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the said technologies, methods and devices should be regarded as part of the specification. In all the examples shown and discussed here, any specific value should be interpreted as merely exemplary, rather than as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0045] In addition, although the terms used in this application are selected from well-known and commonly used terms, some of the terms mentioned in the specification of this application may be selected by the applicant according to his or her judgment, and their detailed meanings are described in the relevant parts of the description herein. In addition, it is required to understand this application not only through the actual terms used, but also through the meanings implied by each term.

[0046] Flowcharts are used in this application to illustrate the operations performed by the devices or equipment according to the embodiments of this application. It should be understood that the operations before or below do not necessarily need to be executed precisely in order. On the contrary, they can be executed in reverse order or simultaneously. At the same time, other operations can be added to these processes, or one or several steps can be removed from these processes.

[0047] Figure 1 It is a schematic flow chart of a method for calculating the boron deposition mass of a reactor provided by an embodiment of this application. As Figure 1 shown, the method for calculating the boron deposition mass of the reactor includes the following steps:

[0048] Step S110: Calculate the deposition mass of boron-lithium compounds inside the fouling.

[0049] The deposition mass of boron-lithium compounds inside the fouling is the mass of boron-lithium compounds deposited inside the fouling, which can be calculated through a certain relational expression. For example, the deposition mass of boron-lithium compounds inside the fouling can be calculated based on the boron deposition layer thickness, the boron concentration in the coolant, and the concentration factor. In some embodiments, calculating the deposition mass of boron-lithium compounds inside the fouling includes the following steps:

[0050] Step S1101: Obtain the boron deposition layer thickness inside the fouling.

[0051] The boron deposition layer thickness inside the fouling can be obtained based on the fouling thickness. For example, it can be obtained based on the relational expression between the boron deposition layer thickness inside the fouling and the fouling thickness fitted according to test data, or based on the concentration of target substances (such as lithium, boron, etc.) inside the fouling and the fouling thickness.

[0052] In some embodiments, obtaining the thickness of the boron deposition layer inside the dirt includes: obtaining the concentration of the target substance inside the dirt; obtaining the thickness of the boron deposition layer based on the concentration of the target substance, the solubility of the deposited boron-lithium compound, and the dirt thickness. Among them, obtaining the concentration of the target substance inside the dirt includes: dividing the dirt into multiple layers of grids based on the dirt thickness; calculating the concentration of the target substance at the grids. Correspondingly, obtaining the thickness of the boron deposition layer based on the concentration of the target substance, the solubility of the deposited boron-lithium compound, and the dirt thickness includes: when the concentration of the target substance at the grid exceeds the solubility of the deposited boron-lithium compound, obtaining the thickness of the boron deposition layer based on the dirt thickness and the position of the grid. In the embodiments of the present application, the dirt is divided into multiple layers of grids and calculations are performed based on the grid units, making the calculation results more accurate.

[0053] Since the microstructure of the dirt is a capillary porous body, the porous body is considered a group of interconnected pipes, with the larger vertical pores filled with steam and the smaller pores filled with liquid. Considering the diffusion of the target substances (such as lithium and boron) inside the dirt and the convection caused by the mass flow inside the dirt, mass flow convection equations are constructed for the liquid phase and vapor phase inside the dirt respectively, and then the concentration of the target substance inside the dirt is obtained by solving, making the calculation results more accurate. Specifically, calculating the concentration of the target substance at the grid includes: constructing the mass flow convection equation of the liquid phase inside the dirt based on the diffusion coefficient of the target substance in the liquid phase of the dirt, the total mass flow of the target substance at the grid in the liquid phase of the dirt, and the mass concentration of the target substance at the grid in the liquid phase of the dirt; constructing the mass flow convection equation of the vapor phase inside the dirt based on the diffusion coefficient of the target substance in the vapor phase of the dirt, the total mass flow of the target substance at the grid in the vapor phase of the dirt, and the mass concentration of the target substance at the grid in the vapor phase of the dirt; solving based on the relationship between the mass flow convection equation of the liquid phase inside the dirt, the mass flow convection equation of the vapor phase inside the dirt, the total mass flow of the target substance at the grid in the liquid phase of the dirt and the total mass flow of the target substance at the grid in the vapor phase of the dirt, and the relationship between the mass concentration of the target substance at the grid in the liquid phase of the dirt and the mass concentration of the target substance at the grid in the vapor phase of the dirt to obtain the mass concentration of the target substance at the grid in the liquid phase of the dirt, and taking the obtained mass concentration of the target substance at the grid in the liquid phase of the dirt as the concentration of the target substance at the grid.

[0054] In an exemplary embodiment, obtaining the thickness of the boron deposition layer inside the dirt includes the following steps:

[0055] Step S1111, dividing the grids.

[0056] Please refer to Figure 2, dirt deposits on the surface of the fuel assembly cladding. Based on the given dirt thickness, the grid is evenly divided, and the thickness of each layer of the grid is dx. The grid is divided sequentially from the dirt surface (close to the fluid side) to the cladding surface, and the parameters at each layer of the grid are determined. For example, if the dirt is evenly divided into N - 1 layers of grids, these N - 1 layers of grids share N surfaces, namely surfaces x(1), x(2), …, x(n), x(n + 1), …, x(N). Among them, the thickness of the nth layer of the grid is dx(n). It can be understood that considering the large size of the fuel assembly cladding surface, each layer of the grid can also be divided into multiple grids in the direction perpendicular to the dirt deposition direction, and the calculation is performed for each grid in a loop.

[0057] In the above embodiments, the grid is divided sequentially from the dirt surface to the cladding surface. In some other embodiments, the grid can also be divided sequentially from the cladding surface to the dirt surface, and the embodiments of the present application do not limit this.

[0058] Step S1112: Calculate the concentration of the target substance at the grid. Among them, the target substance can contain lithium, or contain boron, or contain both lithium and boron.

[0059] Considering the diffusion of the target substance (such as lithium, boron, etc.) inside the dirt and the convection caused by the mass flow inside the dirt, mass flow convection equations are constructed for the liquid phase and the vapor phase inside the dirt respectively. Among them, at the kth layer of the grid, the mass flow convection equations for the liquid phase and the vapor phase inside the dirt are exemplified as follows:

[0060] (1)

[0061] (2)

[0062] (3)

[0063] Among them: G i,l,k is the total mass flow rate of the target substance i at the kth layer of the grid in the liquid phase inside the dirt, with the unit of kg / s·m 2 ;

[0064] D i,l is the diffusion coefficient of the target substance i in the liquid phase inside the dirt, with the unit of m 2 / s, where l represents the liquid phase;

[0065] is the liquid phase density inside the dirt, with the unit of kg / m 3 ;

[0066] A l is the flow area of the part filled with the liquid phase inside the dirt, with the unit of m 2 ;

[0067] Ci,l,k is the mass concentration of target substance i at the k-layer grid in the liquid phase of the dirt, in ppb;

[0068] G l is the mass flow rate of the liquid phase in the dirt, in kg / s·m 2 ;

[0069] G i,v,k is the total mass flow rate of target substance i at the k-layer grid in the vapor phase of the dirt, in kg / s·m 2 ;

[0070] D i,v is the diffusion coefficient of target substance i in the vapor phase of the dirt, in m 2 / s, where v represents the vapor phase;

[0071] is the vapor phase density in the dirt, in kg / m 3 ;

[0072] A v The flow area of ​​the dirt filled with vapor phase, in m 2 ;

[0073] C i,l,v is the mass concentration of the target substance at the k-layer grid in the vapor phase in the dirt, in ppb;

[0074] G v is the mass flow rate of the vapor phase in the dirt, in kg / s·m 2 ;

[0075] B is the coefficient.

[0076] In steady state, the net flow of target substance i at any position in the dirt is 0, and the following relationship exists at the k-layer grid:

[0077] (4)

[0078] By combining equations (1)-(4), we can obtain C i,l,k , the solved C i,l,k as the concentration of target substance i at the grid.

[0079] Step S1113, calculating the thickness of the boron deposition layer.

[0080] Based on the concentration distribution of the target substance inside the dirt, it is determined whether the target substance at the grid has reached the critical concentration, that is, whether it exceeds the solubility of the deposited boron-lithium compound, thereby obtaining the thickness d of the boron deposition layer. B . Boron deposition layer thickness d B The calculation formula example is as follows:

[0081] (5)

[0082] Wherein, d B is the thickness of the boron deposition layer, with the unit of m;

[0083] d c is the thickness of the dirt, with the unit of m;

[0084] x(j) is the thickness from the dirt surface to the j-th layer of grid assuming that the concentration of the target substance i at the j-th layer of grid exceeds the solubility of the deposited boron-lithium compound. If the thickness of each layer of grid is dx, then the thickness from the dirt surface to the j-th layer of grid is j·dx, with the unit of m.

[0085] The solubility of the deposited boron-lithium compound can be input by the user or obtained based on the temperature inside the dirt. Exemplarily, the solubility of the deposited boron-lithium compound is obtained based on an empirical relationship related to temperature:

[0086] SI = f(T) (6)

[0087] Wherein, SI is the solubility of the deposited boron-lithium compound, with the unit of ppb;

[0088] T is the temperature inside the dirt, with the unit of °C.

[0089] Step S1102: Calculate the deposition mass of the boron-lithium compound based on the thickness of the boron deposition layer, the boron concentration in the coolant, and the concentration factor.

[0090] In some embodiments, an example of the calculation formula for the deposition mass of the boron-lithium compound is as follows:

[0091] (7)

[0092] Wherein, M b,1 is the deposition mass of the boron-lithium compound, with the unit of kg;

[0093] k B is the concentration factor;

[0094] C coolant B is the boron concentration in the coolant, with the unit of ppb;

[0095] is the density of the coolant, with the unit of kg / m 3 ;

[0096] A is the area of the calculation region on the cladding surface, with the unit of m 2 .

[0097] Step S120: Calculate the boron adsorption mass on the dirt surface.

[0098] The boron adsorption mass on the fouled surface, i.e., the mass of boron adsorbed on the fouled surface, can be calculated through a certain relational formula. For example, it can be calculated based on the boron concentration on the cladding surface and the fouled mass. In some embodiments, calculating the boron adsorption mass on the fouled surface includes the following steps:

[0099] Step S1201: Obtain the boron concentration on the cladding surface.

[0100] The boron concentration on the cladding surface can be input by the user or calculated based on relevant calculation formulas. In an exemplary embodiment, the boron concentration on the cladding surface is calculated based on the enrichment factor and the boron concentration in the coolant. An example of the calculation relational formula is as follows:

[0101] (8)

[0102] (9)

[0103] Where C clad B is the boron concentration on the cladding surface, with the unit of ppb;

[0104] C coolant B is the boron concentration in the coolant, with the unit of ppb;

[0105] CF B is the enrichment factor;

[0106] m e is the mass evaporation rate of the fouled surface, with the unit of kg / s·m 2 ;

[0107] d c is the fouled thickness, with the unit of m;

[0108] is the coolant density, with the unit of kg / m 3 ;

[0109] D B is the boron diffusion coefficient in the coolant, with the unit of m 2 / s;

[0110] P is the fouled porosity.

[0111] Step S1202: Calculate the boron adsorption mass based on the boron concentration on the cladding surface and the fouled mass.

[0112] In actual operation, the mass of boron adsorbed on the fouled surface can be obtained based on the relational formula of the boron adsorption mass fitted according to the test data with the boron concentration on the cladding surface and the fouled mass. An example of the relational formula is as follows:

[0113] (10)

[0114] Among them, b1, b2, and b3 are constants;

[0115] M crud is the fouling mass, with the unit of kg;

[0116] C clad B is the boron concentration on the cladding surface, with the unit of ppb.

[0117] Step S130: Sum the deposition mass of the boron-lithium compound and the adsorbed boron mass to obtain the boron deposition mass.

[0118] Combining the deposition mass of the boron-lithium compound and the adsorbed boron mass, the total boron deposition mass M b can be obtained, and the relational expression is as follows:

[0119] (11)

[0120] This application considers two boron deposition mechanisms, namely the deposition of boron-lithium compounds and the adsorption of boron. By combining these two deposition mechanisms to calculate the total boron deposition mass, the calculation of the boron deposition mass in the reactor is realized, and the calculation result is more accurate.

[0121] Figure 3 is a schematic structural diagram of a computing device provided by an embodiment of this application. As Figure 3 shown, the computing device 300 includes one or more processors 310, one or more memories 320 coupled to the processors 310, and one or more communication modules 340 coupled to the processors 310.

[0122] The communication module 340 is used for two-way communication. The communication module 340 has at least one antenna for facilitating communication. The communication interface can represent any interface necessary for communicating with other network elements.

[0123] The processor 310 can be of any type suitable for the local technical network, and as a non-limiting example, it can include one or more of the following: general-purpose computer, dedicated computer, microprocessor, digital signal processor (DSP), and processor based on a multi-core processor architecture. The computing device 300 can have multiple processors, such as an application-specific integrated circuit chip, which is clocked in time to synchronize with the main processor.

[0124] The memory 320 may include one or more non-volatile memories and one or more volatile memories. Examples of non-volatile memories include, but are not limited to, read-only memory (ROM) 324, electrically programmable read-only memory (EPROM), flash memory, hard disks, optical disks (CDs), digital video disks (DVDs), and other magnetic and / or optical memories. Examples of volatile memories include, but are not limited to, random access memory (RAM) 322 and other volatile memories that do not persist during a power outage duration.

[0125] The computer program 330 includes computer-executable instructions to be executed by the associated processor 310. The computer program 330 may be stored in the ROM 324. The processor 310 may execute any appropriate actions and processes by loading the computer program 330 into the RAM 322.

[0126] Embodiments of the present application may be implemented by the computer program 330 such that the computing device 300 may execute any of the disclosed processes discussed with reference to Figure 1 The embodiments of the present application may also be implemented by hardware or by a combination of software and hardware.

[0127] In some embodiments, the computer program 330 may be tangibly embodied in a computer-readable medium, which may be included in the computing device 300 (e.g., the memory 320) or other storage devices accessible by the computing device 300. The computing device 300 may load the computer program 330 from the computer-readable medium into the RAM 322 for execution. The computer-readable medium may include any type of tangible non-volatile memory, such as ROM, EPROM, flash memory, hard disk, CD, DVD, etc. The computer program 330 is stored on the computer-readable medium.

[0128] Generally, the various embodiments of the present application may be implemented in hardware or special-purpose circuits, software, logic, or any combination thereof. Certain aspects may be implemented in hardware, while other aspects may be implemented in firmware or software, which may be executed by a controller, microprocessor, or other computing device. Although the various aspects of the embodiments of the present application are shown and described as block diagrams, flowcharts, or using some other graphical representation, it should be understood that, by way of non-limiting example, the blocks, devices, systems, techniques, or methods described herein may be implemented in hardware, software, firmware, special-purpose circuits or logic, general-purpose hardware or a controller or other computing device, or some combination thereof.

[0129] The present application also provides at least one computer program product tangibly stored on a non-transitory computer-readable storage medium. The computer program product includes computer-executable instructions, such as instructions included in program modules, which are executed in a device on a target real or virtual processor to perform the methods described above with reference to Figure 1 the methods described. Generally, program modules include routines, programs, libraries, objects, classes, components, data structures, etc. that perform specific tasks or implement specific abstract data types. In various embodiments, the functions of program modules can be combined or separated as needed among program modules. The machine-executable instructions for program modules can be executed within local or distributed devices. In a distributed device, program modules can be located in local and remote storage media.

[0130] The program code for performing the methods of the present application can be written in any combination of one or more programming languages. This program code can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when the program code is executed by the processor or controller, the functions / operations specified in the flowchart and / or block diagram are implemented. The program code can be executed entirely on a machine as a stand-alone software package, partially on a machine, partially on a machine, partially on a remote machine, partially on a remote machine, or entirely on a remote machine or server.

[0131] In the context of the present application, the computer program code or related data can be carried by any suitable carrier to enable a device, apparatus, or processor to perform the various processes and operations described above. Examples of carriers include signals, computer-readable media, etc.

[0132] The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or apparatuses, or any suitable combination of the foregoing. More specific examples of the computer-readable storage medium include an electrical connection having one or more wires, a portable computer floppy disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0133] Moreover, although the operations are described in a particular order, this should not be construed as requiring that the operations be performed in the particular order shown or in sequential order, or that all of the illustrated operations be performed, to obtain the desired result. In some cases, multitasking and parallel processing may be advantageous. Similarly, although several specific implementation details are included in the above discussion, these details should not be construed as limitations on the scope of the present application, but rather as descriptions of features specific to particular embodiments. Certain features that are described in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment may also be implemented separately or in any suitable subcombination in multiple embodiments.

[0134] Although the present application has been described in language specific to structural features and / or methodological acts, it is to be understood that the application defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.

Claims

1. A method for calculating boron deposition mass of a reactor, characterized in that: include: Calculate the deposited mass of boron-lithium compounds inside the dirt; Calculate the mass of boron adsorbed on the dirt surface; The boron-lithium compound deposition mass and the boron adsorption mass are summed to obtain the boron deposition mass; The step of calculating the deposited mass of boron-lithium compounds inside the dirt comprises: Obtain the thickness of the boron deposition layer inside the dirt; Calculating the deposition mass of the boron-lithium compound based on the thickness of the boron deposition layer, the boron concentration in the coolant and the concentration factor; And the calculation of the boron adsorption mass on the dirt surface includes: Obtaining the boron concentration on the cladding surface; Based on the relationship between the boron adsorption mass, the boron concentration on the cladding surface and the dirt mass fitted according to the experimental data, the boron adsorption mass on the dirt surface is obtained according to the obtained boron concentration on the cladding surface, wherein the relationship is as follows: ； Where b1, b2 and b3 are constants; M crud is the dirt mass, in kg; C clad B is the boron concentration on the cladding surface, in ppb; And the step of obtaining the thickness of the boron deposition layer inside the dirt comprises: Divide the dirt into multiple layers of grids based on dirt thickness; calculating the concentration of a target substance at the grid, wherein the target substance comprises lithium and / or boron; Determine whether the concentration of the target substance at the grid exceeds the solubility of the deposited boron-lithium compound, and calculate the thickness of the boron deposition layer based on the following formula: ， Where, d B is the thickness of the boron deposition layer; d c is the dirt thickness; x(j) is the thickness from the dirt surface to the jth grid layer, assuming that the concentration of target substance i at the jth grid layer exceeds the solubility of the deposited boron-lithium compound.

2. The method according to claim 1, characterized in that The calculating the concentration of the target substance at the grid comprises: Constructing a mass flow convection equation for the liquid phase in the dirt based on the diffusion coefficient of the target substance in the liquid phase in the dirt, the total mass flow rate of the target substance at the grid in the liquid phase in the dirt, and the mass concentration of the target substance at the grid in the liquid phase in the dirt; Constructing a mass flow convection equation for the vapor phase in the dirt based on the diffusion coefficient of the target substance in the vapor phase in the dirt, the total mass flow rate of the target substance at the grid in the vapor phase in the dirt, and the mass concentration of the target substance at the grid in the vapor phase in the dirt; Based on the mass flow convection equation of the liquid phase in the dirt, the mass flow convection equation of the vapor phase in the dirt, the relationship between the total mass flow rate of the target substance at the grid in the liquid phase in the dirt and the total mass flow rate of the target substance at the grid in the vapor phase in the dirt, and the relationship between the mass concentration of the target substance at the grid in the liquid phase in the dirt and the mass concentration of the target substance at the grid in the vapor phase in the dirt, the mass concentration of the target substance at the grid in the liquid phase in the dirt is solved, and the mass concentration of the target substance at the grid in the liquid phase in the dirt obtained is used as the concentration of the target substance at the grid.

3. The method according to claim 1, characterized in that The step of obtaining the thickness of the boron deposition layer inside the dirt further comprises: The solubility of the deposited boron-lithium compound is obtained based on the internal temperature of the scale.

4. The method according to claim 1, characterized in that The step of obtaining the boron concentration on the surface of the cladding comprises: The boron concentration at the cladding surface is calculated based on the concentration factor and the boron concentration in the coolant.

5. A computing device, characterized in that: include: at least one processor; as well as At least one memory having instructions stored thereon, which, when executed individually or collectively by the at least one processor, cause the computing device to perform the method according to any one of claims 1 to 4.

6. A computer storage medium, characterized in that: The computer storage medium stores instructions, which, when executed individually or collectively by at least one processor of a computing device, cause the computing device to perform the method according to any one of claims 1 to 4.

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