Dose control system and method for ion implanter and electronic equipment

Abstract

The invention provides a dose control system of an ion implanter, which is applied to the technical field of control and regulation systems and comprises a PLC (programmable logic controller), an I / O (input / output) data acquisition module and a motion control module, the PLC is connected with the I / O data acquisition module and the motion control module, and the motion control module is connected with the PLC. Control logics for controlling various doses of the ion implanter are arranged in the PLC, a wafer is loaded on the motion control module, the I / O data acquisition module acquires various industrial parameters of the ion implanter, the PLC determines a target implantation dose and a target implantation speed according to various process parameters acquired by the I / O data acquisition module, and the target implantation dose and the target implantation speed are controlled by the motion control module. And the motion control module is directly controlled to move according to the target implantation dose and the target implantation speed, so that the ion implanter can perform ion implantation on the wafer according to the target implantation dose and the target implantation speed. By selecting the embodiment of the invention, the problems of low response efficiency and low processing precision in the existing dose control system are effectively solved.

Description

Technical Field

[0001] The present application relates to the technical field of general control or regulation systems, and in particular to an ion implantation machine dosage control system, method and electronic equipment. Background Art

[0002] An ion implanter is a process production equipment that can transform insulators into semiconductor materials with conductive properties. In an ion implanter, the dose control system is the core technology of the large-beam ion implanter. The dose control system is used to accurately control the energy, current, type of ions, etc. of the ion beam of the ion implanter. The precision and accuracy of the dose control system of the ion implanter will directly determine the precision of the wafers produced by the ion implanter.

[0003] However, in the existing dose control system, since the dose control logic is processed by different dose control subsystems, when controlling the ion implantation dose of the ion implanter equipment, different dose control subsystems respond to the process control logic they are responsible for. This usually results in low response efficiency and low processing accuracy. Summary of the invention

[0004] In view of this, embodiments of the present application provide an ion implanter dose control system, method and electronic device to improve the response efficiency and processing accuracy of the ion implanter dose control system.

[0005] In a first aspect, an embodiment of the present application provides an ion implanter dose control system, wherein the dose control system comprises: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to the I / O data acquisition module and the motion control module respectively; the PLC controller is provided with control logics for various dose controls of the ion implanter; a wafer is loaded on the motion control module; the PLC controller is used to:

[0006] According to the various process parameters of the ion implanter collected by the I / O data acquisition module, the target implantation dose and the target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target injection speed.

[0007] In some possible embodiments, the dosage control system further includes: an industrial Ethernet bus, and the PLC controller is connected to the I / O data acquisition module and the motion control module respectively through the industrial Ethernet bus.

[0008] In some possible embodiments, the dosage control system further includes: a host computer, the host computer includes: a user interaction interface, wherein the host computer is connected to the PLC controller, the PLC controller is integrated with a preset industrial program programming platform, the preset industrial program programming platform is preset with various industrial control library files, and the PLC controller is also used for:

[0009] Receiving the control logic of each type of dosage control sent by the host computer, wherein the control logic of each type of dosage control is a software control logic program written by the user in the user interaction interface based on the various types of industrial control library files;

[0010] The control logic of each type of dosage control is executed according to a preset execution cycle.

[0011] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1 ms, wherein the execution cycle refers to the time it takes for the PLC controller to execute a software control logic program built into the PLC controller once.

[0012] In some possible embodiments, the process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the PLC controller is further used to:

[0013] If an abnormal voltage appears in the voltage of the ion beam, the abnormal processing control logic is triggered; wherein the abnormal processing control logic is used to perform abnormal protection on the wafer when the voltage of the ion beam appears an abnormal voltage, specifically including:

[0014] The target position coordinates of the motion control module at the time when the abnormal voltage occurs are recorded, and the to-be-supplemented injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection on the target position coordinates according to the to-be-supplemented injection dose.

[0015] In some possible embodiments, the process parameters include: the intensity of the ion beam BeamCurrent, the unit area Area through which the ion beam flows, and the ion implantation time Time. The PLC controller determines the target implantation dose Dose by the following formula:

[0016] In some possible embodiments, the process parameters further include: the number of injections NumberPass, the width of the wafer WidthWafer, and the PLC controller determines the target injection speed ScanVelocity by the following formula:

[0017]

[0018] In a second aspect, an embodiment of the present application provides an ion implanter dose control method, wherein the method is applied to the ion implanter dose control system described in the first aspect, wherein the method comprises:

[0019] Collect various process parameters of the ion implanter, and determine the target implantation dose and target implantation speed according to the process parameters;

[0020] The motion control module loaded with the wafer is controlled to move according to the target implantation speed, so that the ion implanter implants ions into the wafer according to the target implantation dose and the target implantation speed.

[0021] In some possible embodiments, the dosage control system further includes: an industrial Ethernet bus, and the PLC controller is connected to the I / O data acquisition module and the motion control module respectively through the industrial Ethernet bus.

[0022] In some possible embodiments, the dosage control system further includes: a host computer, the host computer includes: a user interaction interface, wherein the host computer is connected to the PLC controller, the PLC controller is integrated with a preset industrial program programming platform, and the preset industrial program programming platform is preset with various industrial control library files, and the method further includes:

[0023] Receiving the control logic of each type of dosage control sent by the host computer, wherein the control logic of each type of dosage control is a software control logic program written by the user in the user interaction interface based on the various types of industrial control library files;

[0024] The control logic of each type of dosage control is executed according to a preset execution cycle.

[0025] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1 ms, wherein the execution cycle refers to the time it takes for the PLC controller to execute a software control logic program built into the PLC controller once.

[0026] In some possible embodiments, the process parameters include: voltage of the ion beam, position coordinates of the motion control module, and the method further includes:

[0027] If an abnormal voltage appears in the voltage of the ion beam, the abnormal processing control logic is triggered; wherein the abnormal processing control logic is used to perform abnormal protection on the wafer when the voltage of the ion beam appears an abnormal voltage, specifically including:

[0028] The target position coordinates of the motion control module at the time when the abnormal voltage occurs are recorded, and the to-be-supplemented injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection on the target position coordinates according to the to-be-supplemented injection dose.

[0029] In some possible embodiments, the process parameters include: the intensity of the ion beam BeamCurrent, the unit area Area through which the ion beam flows, and the ion implantation time Time. The target implantation dose Dose is determined by the following formula:

[0030]

[0031] In some possible embodiments, the process parameters further include: the number of injections NumberPass, the width of the wafer WidthWafer, and the target injection speed ScanVelocity is determined by the following formula:

[0032] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes:

[0033] Processor; and

[0034] Memory for storing programs,

[0035] Wherein, the program includes instructions, and when the instructions are executed by the processor, the processor executes the ion implantation machine dose control method described in the second aspect.

[0036] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the ion implanter dose control method described in the second aspect.

[0037] Beneficial effects of this application:

[0038] The present application provides an ion implanter dose control system, which includes: a PLC controller, an I / O data acquisition module and a motion control module, wherein the PLC controller is connected to the I / O data acquisition module and the motion control module, the PLC controller is provided with control logics for various dose controls of the ion implanter, the motion control module is loaded with a wafer, the I / O data acquisition module acquires various industrial parameters of the ion implanter, and then the PLC controller determines a target injection dose and a target injection speed according to various process parameters acquired by the I / O data acquisition module, and then directly controls the motion control module to move according to the target injection dose and the target injection speed, so that the ion implanter performs ion implantation on the wafer according to the target injection dose and the target injection speed.

[0039] By selecting the embodiment of the present application, the PLC controller has built-in control logic for the dose control of the ion implanter. The PLC controller uniformly and quickly responds to the various process parameters collected by the input I / O data acquisition module, and determines the corresponding target injection dose and target injection speed. Compared with the prior art solution in which different dose control subsystems perform dose control separately, the embodiment of the present application can realize efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0041] Figure 1 A schematic diagram of a system architecture of an ion implanter dosage control system provided in an embodiment of the present application is shown;

[0042] Figure 2 Another system architecture schematic diagram of an ion implanter dosage control system provided in an embodiment of the present application is shown;

[0043] Figure 3 A schematic diagram of ion implantation of an ion implanter provided in an embodiment of the present application is shown;

[0044] Figure 4 A schematic flow chart of a method for controlling the dose of an ion implanter provided in an embodiment of the present application is shown;

[0045] Figure 5 A structural block diagram of an exemplary electronic device that can be used to implement an embodiment of the present application is shown. DETAILED DESCRIPTION

[0046] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0047] It should be understood that the various steps described in the method implementation of the present application can be performed in different orders and / or performed in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0048] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0049] It should be noted that the modifications of "one" and "plurality" mentioned in the present application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0050] In order to improve the accuracy and response efficiency of the ion implanter dose control system, the present application provides an ion implanter dose control system, method and electronic device. In the first aspect, the present application provides an ion implanter dose control system, which is an auxiliary system set for the ion implanter and is a general term for the hardware and software systems used to implement the ion implanter dose control. As an embodiment, the ion implanter dose control system is deployed in any electronic device with ion implanter dose control, and the type of the electronic device can be a mobile terminal, a computer, an industrial computer, a server, etc.

[0051] In some embodiments, the ion implantation machine dosage control system provided by the present application can be as follows: Figure 1As shown, it includes: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to the I / O data acquisition module and the motion control module respectively; the PLC controller is provided with control logics of various dose controls of the ion implanter; the motion control module is loaded with a wafer; the PLC controller is used to:

[0052] According to the various process parameters of the ion implanter collected by the I / O data acquisition module, the target implantation dose and the target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target injection speed.

[0053] By selecting the embodiment of the present application, the PLC controller has built-in control logic for the dose control of the ion implanter. The PLC controller uniformly and quickly responds to the various process parameters collected by the input I / O data acquisition module, and determines the corresponding target injection dose and target injection speed. Compared with the prior art solution in which different dose control subsystems perform dose control separately, the embodiment of the present application can realize efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system.

[0054] The following will describe in detail the various parts of the ion implantation machine dose control system provided by the present application with reference to specific examples:

[0055] In the embodiment of the present application, the full name of the PLC controller is Programmable Logic Controller. The PLC controller is a digital operation controller with a microprocessor for automatic control, which can load control instructions into the memory at any time for storage and execution. Specifically, the PLC controller is composed of functional units such as a CPU, instruction and data memory, input / output interface, power supply, and digital analog conversion. In the application scenario of the embodiment of the present application, since the ion implanter is a high-precision semiconductor production equipment, in order to ensure the process quality of the wafers produced by the ion implanter, for such scenarios, the processing accuracy of the PLC controller needs to reach the millisecond level, especially the execution cycle of the PLC controller needs to reach the millisecond level.

[0056] As an implementation method, the execution cycle t of the PLC controller should be controlled at an accuracy of t≤1ms, where the execution cycle of the PLC refers to the time it takes for the PLC controller to execute a software control logic program built into the PLC controller. By selecting the embodiment of the present application, the PLC controller can ensure that each built-in dose control logic can be executed once every 1 millisecond or even less than 1 millisecond, thereby ensuring that the dose control system can efficiently and accurately determine the dose of the ion implanter when performing ion implantation, further ensuring the product quality of the wafers produced by the ion implanter.

[0057] In the embodiment of the present application, the PLC controller is built with control logics of various dose controls of the ion implanter. Each control logic is defined as a software control logic program at the software level. The software control logic program is written by the ion implanter user according to the process requirements and stored in the PLC controller. Specifically, the PLC controller is integrated with a preset industrial program programming platform, and the preset industrial program programming platform is preset with various industrial control library files. The ion implanter user can write the software control logic program based on the various industrial control library files provided by the preset industrial program programming platform, and finally write the written software control logic programs into the PLC controller. In the subsequent actual use process, the PLC controller executes the built-in software control program to achieve the corresponding dose control. As a preferred embodiment, the preset industrial program programming platform can be a programming platform implemented based on the IEC6113 standard, one of the international standards for industrial control programming languages.

[0058] As an implementation method, the ion implantation machine dosage control system provided in the present application can be as follows: Figure 2 As shown, it also includes: a host computer. The host computer includes: a user interaction interface, the host computer is connected to the PLC controller, and the user can write corresponding software control logic programs based on various industrial control library files on the user interaction interface of the host computer, and then the host computer transmits the software control logic programs corresponding to the control logic of each dosage control written by the user to the PLC controller, which is stored and run by the PLC controller.

[0059] As mentioned above, the PLC controller has built-in input and output interfaces. In the embodiment of the present application, the I / O data acquisition module matches the various process parameters of the ion implanter with the various input interfaces of the PLC controller through the input interface. In this way, it is possible to obtain the various process parameters collected by the I / O data acquisition module through the various input interfaces. The various process parameters are the input parameters of the control logic of each dose control, and then based on the input process parameters, the control logic of each type of dose control is automatically executed according to the preset execution cycle, that is, the control logic of the dose control integrated in the PLC controller is run, and the corresponding calculation results obtained can be the target injection dose and the target injection speed.

[0060] In the embodiment of the present application, the I / O data acquisition module is a general term for a functional module provided in the ion implanter equipment for monitoring whether the various functions of the ion implanter are operating normally, which may be a sensor, a measuring instrument, etc. The specific type of the I / O data acquisition module may vary according to the actual process scenario, and the present application does not strictly limit it. Among them, the I / O data acquisition module determines whether the ion implanter functions normally by monitoring the various process parameters of the ion implanter. The process parameters are the various physical parameters for maintaining the production of the ion implantation process, including electrical parameters and mechanical parameters, wherein the electrical parameters may include various electrical information of the ion beam of the ion implanter, such as the voltage, current, impedance, inductance, etc. of the ion beam. The mechanical parameters may include various mechanical information of the ion beam and the motion control module, such as the flow intensity of the ion beam, the coordinates of the motion control module, etc.

[0061] As an implementation method, the I / O data acquisition module can be an Ethercat fiber optic communication acquisition module with a 16-bit digital-to-analog conversion function, high sampling accuracy and anti-interference ability. Among them, the sampling period of the I / O acquisition module must meet the following requirements: the sampling period is 1ms, which can achieve millisecond-level data update sampling, improve the ion beam acquisition capability, help improve the signal sampling capability, and accurately determine the voltage fluctuation in the ion implantation machine dose.

[0062] As an implementation method, the process parameters include: the voltage of the ion beam, the position coordinates of the motion control module. The PLC controller is integrated with the exception handling control logic. Based on this, the PLC controller is also used to:

[0063] If an abnormal voltage appears in the voltage of the ion beam, the abnormal processing control logic is triggered; wherein the abnormal processing control logic is used to perform abnormal protection on the wafer when the voltage of the ion beam appears an abnormal voltage, specifically including:

[0064] The target position coordinates of the motion control module at the time when the abnormal voltage occurs are recorded, and the to-be-supplemented injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection on the target position coordinates according to the to-be-supplemented injection dose.

[0065] There are a large number of high-voltage power supplies in the electrical system of the ion implanter. The fluctuation of the power supply will affect the process effect of ion implantation. The voltage fluctuation includes the Glitch abnormal voltage, referred to as the spark voltage. In the embodiment of the present application, if the Glitch abnormal voltage appears in the voltage of the ion beam, it indicates that there is an abnormal voltage. At this time, the abnormal processing control logic integrated in the PLC controller is triggered, and the software control logic program corresponding to the abnormal processing control logic is automatically run to perform abnormal protection on the wafer. Specifically, by recording the target position coordinates of the motion control module at the moment when the abnormal voltage occurs, and determining the current injected dose according to the target injection speed, and according to the pre-specified injection dose to be achieved, it is determined that the dose that needs to be injected is the dose to be supplemented, and then in the subsequent operation of the ion implanter, according to the target coordinate position, the target coordinate position is supplemented according to the supplementary injection dose.

[0066] In the embodiment of the present application, the motion control module is the core module of the entire ion implanter that carries the implantation object, the wafer. By loading the wafer required for ion implantation to the position corresponding to the ion beam through the motion control module, ion implantation can be achieved for the wafer. As an implementation method, the motion control module includes a servo motor, which controls the loaded wafer to move within the corresponding range of motion. Specifically, how to perform abnormal protection against Glitch voltage can be referred to the applicant's relevant patent application documents, which will not be repeated here.

[0067] In some possible embodiments, the dosage control system provided by the present application can also be as follows: Figure 2 As shown, it includes an industrial Ethernet bus (referred to as Ethercat bus), and the PLC controller is connected to the I / O data acquisition module and the motion control module respectively through the industrial Ethernet bus. In the embodiment of the present application, the PLC controller sends a drive signal to the servo motor of the motion control module through the industrial Ethernet bus, and the servo motor in the motion control module can be controlled by the PLC controller. In this way, the control board specially used to control the servo motor can be saved, reducing the system cost of the entire ion implanter dose control system.

[0068] In the ion implantation dose control system, the most critical control object is the ion beam, so the measurement of the ion beam current is the key to the entire ion implanter. Among them, the integral of the ion beam current can characterize the size of the overall ion beam current, and the uniformity of the ion beam current within the injection range can characterize the horizontal distribution and volatility of the ion beam current. Specifically, the dose control can be performed through the "ion beam current-position coordinate" distribution curve, that is, one position coordinate corresponds to one ion beam current. As an implementation method, the PLC controller is connected to the motion control module and the I / O data acquisition module at the same time, and the PLC controller can synchronously perform data acquisition and data calculation through parallel processing. Specifically calculate the ion implantation dose and ion implantation speed to calculate the ion beam injection situation.

[0069] In the embodiment of the present application, the implantation dose refers to the number of ions implanted per unit area of ​​the wafer, and the implantation speed refers to the speed at which the ions are implanted on the wafer. Specifically, as an implementation method, after obtaining the position coordinates corresponding to the motion control module, the implantation dose corresponding to the position coordinates and the corresponding target implantation speed can be calculated. Among them, as an implementation method, the process parameters collected by the I / O data acquisition module include: the intensity of the ion beam BeamCurrent, the unit area Area through which the ion beam flows, and the ion implantation time Time. Based on this, the ion implantation dose Dose corresponding to a position coordinate can be calculated by the following formula preset in the control logic based on the dose control quickly:

[0070]

[0071] Based on the calculated implantation dose, the process parameters collected by the I / O data acquisition module can also be obtained: the number of implantations NumberPass, the width of the wafer WidthWafer, and then the ion implantation speed ScanVelocity corresponding to a position coordinate is calculated based on the following formula preset in the control logic of the dose control:

[0072]

[0073] It is worth noting that the wafer implantation process is as follows Figure 3 In the implantation schematic diagram shown, the high position is the starting position of ion implantation, and the low position is the key position of ion implantation. In order to ensure that the scanning time of each area on the wafer is consistent and uniform, it is necessary to add horizontal overscan distance and vertical overscan distance in the horizontal and vertical directions. Assuming that the ion beam is evenly distributed inside and the size of the ion beam is constant during each implantation process, the above two formulas can be used to calculate the corresponding implantation dose and injection speed respectively.

[0074] In a second aspect, the present application provides an ion implanter dose control method, which is applied to the ion implanter dose control system as described in the first aspect. The ion implanter dose control system can be deployed in any electronic device with ion implanter dose control capability, wherein the type of the electronic device includes but is not limited to: a personal mobile terminal, a computer, an industrial control machine or a server, etc. In an embodiment of the present application, the ion implanter dose control method can be as follows: Figure 4 As shown, the following steps are included:

[0075] S41, collecting various process parameters of the ion implanter, and determining a target implantation dose and a target implantation speed according to the process parameters.

[0076] S42, controlling the motion control module loaded with the wafer to move according to the target implantation speed, so that the ion implanter implants ions into the wafer according to the target implantation dose and the target implantation speed.

[0077] By selecting the embodiment of the present application, the PLC controller has built-in control logic for the dose control of the ion implanter. The PLC controller uniformly and quickly responds to the various process parameters collected by the input I / O data acquisition module, and determines the corresponding target injection dose and target injection speed. Compared with the prior art solution in which different dose control subsystems perform dose control separately, the embodiment of the present application can realize efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system.

[0078] In some possible embodiments, the dosage control system further includes: an industrial Ethernet bus, and the PLC controller is connected to the I / O data acquisition module and the motion control module respectively through the industrial Ethernet bus.

[0079] In some possible embodiments, the dosage control system further includes: a host computer, the host computer includes: a user interaction interface, wherein the host computer is connected to the PLC controller, the PLC controller is integrated with a preset industrial program programming platform, and the preset industrial program programming platform is preset with various industrial control library files, and the method further includes:

[0080] Receiving the control logic of each type of dosage control sent by the host computer, wherein the control logic of each type of dosage control is a software control logic program written by the user in the user interaction interface based on the various types of industrial control library files;

[0081] The control logic of each type of dosage control is executed according to a preset execution cycle.

[0082] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1 ms, wherein the execution cycle refers to the time it takes for the PLC controller to execute a software control logic program built into the PLC controller once.

[0083] In some possible embodiments, the process parameters include: voltage of the ion beam, position coordinates of the motion control module, and the method further includes:

[0084] If an abnormal voltage appears in the voltage of the ion beam, the abnormal processing control logic is triggered; wherein the abnormal processing control logic is used to perform abnormal protection on the wafer when the voltage of the ion beam appears an abnormal voltage, specifically including:

[0085] The target position coordinates of the motion control module at the time when the abnormal voltage occurs are recorded, and the to-be-supplemented injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection on the target position coordinates according to the to-be-supplemented injection dose.

[0086] In some possible embodiments, the process parameters include: the intensity of the ion beam BeamCurrent, the unit area Area through which the ion beam flows, and the ion implantation time Time. The target implantation dose Dose is determined by the following formula:

[0087]

[0088] In some possible embodiments, the process parameters further include: the number of injections NumberPass, the width of the wafer WidthWafer, and the target injection speed ScanVelocity is determined by the following formula:

[0089] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0090] In a third aspect, the exemplary embodiments of the present application further provide an electronic device, comprising: at least one processor; and a memory connected to the at least one processor in communication. The memory stores a computer program that can be executed by the at least one processor, and the computer program is used to enable the electronic device to perform a method according to an embodiment of the present application when executed by the at least one processor.

[0091] The exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to perform a method according to an embodiment of the present application.

[0092] The exemplary embodiments of the present application further provide a computer program product, including a computer program, wherein when the computer program is executed by a processor of a computer, it is used to enable the computer to execute the method according to the embodiment of the present application.

[0093] refer to Figure 5 , the structural block diagram of the electronic device 500 that can be used as the server or client of the present application will now be described, which is an example of hardware devices that can be applied to various aspects of the present application. The electronic device is intended to represent various forms of digital electronic computer equipment, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0094] like Figure 5 As shown, the electronic device 500 includes a computing unit 501, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 502 or a computer program loaded from a storage unit 508 into a random access memory (RAM) 503. In the RAM 503, various programs and data required for the operation of the electronic device 500 can also be stored. The computing unit 501, the ROM 502, and the RAM 503 are connected to each other via a bus 504. An input / output (I / O) interface 505 is also connected to the bus 504.

[0095] A plurality of components in the electronic device 500 are connected to the I / O interface 505, including: an input unit 506, an output unit 507, a storage unit 508, and a communication unit 509. The input unit 506 may be any type of device capable of inputting information to the electronic device 500, and the input unit 506 may receive input digital or character information, and generate key signal inputs related to user settings and / or function control of the electronic device. The output unit 507 may be any type of device capable of presenting information, and may include, but is not limited to, a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 508 may include, but is not limited to, a disk, an optical disk. The communication unit 509 allows the electronic device 500 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and may include, but is not limited to, a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth™ device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0096] The computing unit 501 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 501 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, digital signal processors (DSPs), and any appropriate processors, controllers, microcontrollers, etc. The computing unit 501 performs the various methods and processes described above. For example, in some embodiments, the aforementioned ion implanter dose control method may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 508. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 500 via ROM 502 and / or communication unit 509. In some embodiments, the computing unit 501 may be configured to perform the aforementioned ion implanter dose control method by any other appropriate means (e.g., by means of firmware).

[0097] The program code for implementing the method of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, implements the functions / operations specified in the flow chart and / or block diagram. The program code can be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0098] In the context of the present application, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0099] As used herein, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0100] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0101] The systems and techniques described herein may be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0102] A computer system may include clients and servers. Clients and servers are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship to each other.

Claims

1. An ion implantation machine dosage control system, characterized in that: The dose control system comprises: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to the I / O data acquisition module and the motion control module respectively; the PLC controller is provided with control logics of various dose controls of the ion implanter; the motion control module is loaded with a wafer; the PLC controller is used to: According to the various process parameters of the ion implanter collected by the I / O data acquisition module, the target implantation dose and the target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target injection speed.

2. The dosage control system according to claim 1, characterized in that: The dosage control system further comprises: an industrial Ethernet bus, and the PLC controller is connected to the I / O data acquisition module and the motion control module respectively via the industrial Ethernet bus.

3. The dosage control system according to claim 1, characterized in that: The dosage control system further comprises: a host computer, the host computer comprises: a user interaction interface, wherein the host computer is connected to the PLC controller, the PLC controller is integrated with a preset industrial program programming platform, the preset industrial program programming platform is preset with various industrial control library files, and the PLC controller is also used for: Receiving the control logic of each type of dosage control sent by the host computer, wherein the control logic of each type of dosage control is a software control logic program written by the user in the user interaction interface based on the various types of industrial control library files; The control logic of each type of dosage control is executed according to a preset execution cycle.

4. The dosage control system according to claim 1, characterized in that: The execution cycle t of the PLC controller should satisfy: t≤1ms, wherein the execution cycle refers to the time it takes for the PLC controller to execute a software control logic program built into the PLC controller once.

5. The dosage control system according to claim 1, characterized in that: The process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the PLC controller is also used to: If an abnormal voltage appears in the voltage of the ion beam, the abnormal processing control logic is triggered; wherein the abnormal processing control logic is used to perform abnormal protection on the wafer when the voltage of the ion beam appears an abnormal voltage, specifically including: The target position coordinates of the motion control module at the time when the abnormal voltage occurs are recorded, and the to-be-supplemented injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection on the target position coordinates according to the to-be-supplemented injection dose.

6. The dosage control system according to claim 1, characterized in that: The process parameters include: the intensity of the ion beam BeamCurrent, the unit area Area through which the ion beam flows, and the ion implantation time Time. The PLC controller determines the target implantation dose Dose by the following formula:

7. The dosage control system according to claim 6, characterized in that: The process parameters also include: the number of injections NumberPass, the width of the wafer WidthWafer, and the PLC controller determines the target injection speed ScanVelocity by the following formula:

8. A method for controlling the dose of an ion implanter, characterized in that: The method is applied to the ion implantation machine dosage control system according to any one of claims 1 to 7, and the method comprises: Collect various process parameters of the ion implanter, and determine the target implantation dose and target implantation speed according to the process parameters; The motion control module loaded with the wafer is controlled to move according to the target implantation speed, so that the ion implanter implants ions into the wafer according to the target implantation dose and the target implantation speed.

9. An electronic device, characterized in that: The electronic device comprises: Processor; and Memory for storing programs, The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to claim 8.

10. A non-transitory computer-readable storage medium storing computer instructions, characterized in that: The computer instructions are used to make a computer execute the method according to claim 8.

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