Radio frequency power output power calibration method and device, and semiconductor process method

Abstract

The application provides a radio frequency power output power calibration method and device and a semiconductor process method. A first residual index is obtained, and the first residual index is compared with a reference etching stability index to obtain a first comparison index. According to a comparison result of the first comparison index and a first threshold value, a residual calibration strategy or a uniform calibration strategy is determined. The residual calibration strategy preferentially adjusts a first lower radio frequency index and then calibrates a first upper radio frequency index. The uniform calibration strategy adjusts a second upper radio frequency index and then calibrates a second lower radio frequency index. The technical problem that a residual retention scene cannot be quickly identified in different stages and the output power of the upper and lower radio frequency power sources cannot be calibrated in the different stages in the prior art is solved. The technical effects that the adaptability and flexibility of the etching process are improved, and the predictability of the etching process and the adaptability to various complex etching environments are improved are achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor devices, in particular, to a radio frequency power source output power calibration method and device, and a semiconductor process method. BACKGROUND

[0002] Plasma etching equipment in the field of semiconductor manufacturing widely applies radio frequency power source. In the plasma etching equipment, there is a scenario of residual of the previous batch. In this batch production scenario, since the residual of the previous batch will affect the etching efficiency and etching uniformity of the next batch, it is necessary to quickly calibrate the output power of the radio frequency power source to adapt to the residual scenario, especially the residual of the previous batch will cause the initial condition of the etching process of this batch to be unstable, especially at the beginning of etching, the residual will need additional energy to calibrate to remove or dispose, which will cause inconsistency between the initial stage and the subsequent stage of the etching process.

[0003] There are several methods and devices for calibrating the output power of the radio frequency power source in the prior art.

[0004] The first kind, the present scheme adopts the hardware calibration method through the phase-locked cable to calibrate the output power of the radio frequency power source, specifically: the existing plasma equipment applied with the radio frequency power source, such as Figure 1As shown, it comprises a process chamber 13, an upper RF power source 1 and a lower RF power source 5, wherein a susceptor 10 (for example, an electrostatic chuck) for carrying a wafer 9 is arranged in the process chamber 13, the lower RF power source 5 is electrically connected to the susceptor 10 through a lower matching device 4 to load bias power to the susceptor 10. Moreover, a dielectric window 8 is arranged on the top of the process chamber 13, and an upper electrode is arranged above the dielectric window 8, which comprises an outer coil 6 and an inner coil 7 of an inductive coupling coil, both of which are electrically connected to a current distribution unit 3, and the upper RF power source 1 is electrically connected to the current distribution unit 3 through an upper matching device 2 to load RF power to the outer coil 6 and the inner coil 7 through the matching device 2 and the current distribution unit 3, and the RF energy is coupled into the process chamber 13 through the dielectric window 8. In addition, a nozzle 12 is also arranged on the dielectric window 8 to introduce process gas into the process chamber 13. The above-mentioned RF energy can excite the process gas to generate plasma 11. The most important thing in the prior art is that it also comprises a phase-locked cable 14, which is electrically connected to the upper RF power source 1 and the lower RF power source 5 at both ends, in this case, one of the upper RF power source 1 and the lower RF power source 5 is defined as the master power source (Master), and the other is defined as the slave power source (Slave). By adjusting the phase difference of the output waveform of the upper RF power source 1 and the lower RF power source 5, that is, the CEX phase-locked angle, the coupling phase difference between the upper electrode and the lower electrode of the process chamber 13 on the surface of the wafer 9 can be adjusted, thereby affecting the ion energy and the sheath potential above the wafer 9, and further changing the etching rate and the Map distribution of the wafer 9, that is, the change of the CEX phase-locked angle can directly affect the etching rate (ER, Etch Rate) and the Map distribution. The problem existing in this scheme is that the phase-locked cable is used for calibration of RF output power, due to the hardware limitation of the phase-locked cable, it cannot quickly and flexibly accurately calibrate the RF output power to cope with the residue retention scenario. Specifically, due to the hardware limitation of the phase-locked cable, it will cause the limitation of the hardware response speed, the design of the phase-locked cable is optimized for stability rather than speed, which means that it is not fast enough in processing dynamic conditions that change quickly. The residue scenario in the semiconductor manufacturing process requires quick power adjustment to ensure the efficiency and uniformity of the etching process, and the physical and electrical characteristics of the phase-locked cable cannot support such rapid changes. In addition, due to the inherent physical characteristics of the phase-locked cable, such as inductance, capacitance and resistance, the quality and accuracy of the transmitted signal will be affected. When it is necessary to accurately adjust the output of the RF power source to cope with the influence of the residue of the previous batch on the current etching process, these characteristics will cause the adjustment to be not accurate enough to achieve the ideal etching effect.

[0005] Second, a network large model is used to calibrate or adjust the output power of the upper and lower radio frequency power supplies based on the plasma density at the specified location of each chamber near the semiconductor device. This scheme is applied to conventional etching scenarios, but for etching scenarios with residues, the problem is that only by detecting or quantifying the conventional indicator of plasma density cannot identify the etching scenario with residues, and it is necessary to combine the etching rate and the rate of change of plasma density in the residue scenario, because the residue etching process involves the initial stage and the subsequent stage, and the time dimension needs to be considered, the simple quantification of plasma density cannot accurately identify the residue etching scenario and the non-residue etching scenario, and cannot match different radio frequency output power control strategies based on the residue etching scenario and the non-residue etching scenario. In addition, in this technical solution, the upper radio frequency output power and the lower radio frequency output power are respectively controlled by two large models, and the upper radio frequency output power and the lower radio frequency output power are not coupled, which cannot meet the requirements of residue removal and energy demand, and system response and adjustment flexibility, especially the residue needs additional energy to be removed or harmless. The power output between the upper radio frequency and the lower radio frequency is not effectively coordinated, which cannot provide enough energy to process the residue in the initial stage, thereby affecting the consistency and quality of the etching process, and thus cannot meet the requirements of residue removal and energy demand; and when the conditions in the reaction chamber change due to residues, the rapid and coordinated response of the upper radio frequency and the lower radio frequency is very important. If the response is slow or uncoordinated, it will be difficult to quickly adapt to production variables, thereby affecting the quality of the entire batch of products, and thus cannot meet the requirements of system response and adjustment flexibility.

[0006] In summary, how to provide a method for quickly identifying different stages of residue storage scenarios in semiconductor etching and coordinating the output power of upper and lower radio frequency power supplies for different stages has become a technical problem to be solved in the field. SUMMARY

[0007] The embodiments of the present application provide a radio frequency power output power calibration method and device and a semiconductor process method, which solve the technical problem of the prior art that the method cannot quickly identify different stages of residue storage scenarios and coordinate the output power of upper and lower radio frequency power supplies for different stages, accurately identify different stages of residue storage scenarios and coordinate the output power of upper and lower radio frequency power supplies for different stages, and achieve the technical effects of improving the adaptability and flexibility of the etching process and improving the predictability of the etching process and adapting to various complex etching environments.

[0008] According to an aspect of some embodiments of the present application, a method for calibrating output power of a radio frequency power source is provided. The method includes: obtaining a first residual index, the first residual index being calculated according to a first etching rate and a first plasma density variation rate, the first etching rate and the first plasma density variation rate being obtained within a first time T1 in a semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density variation rate and negatively correlated with the first etching rate; obtaining a reference etching stability index, the reference etching stability index being calculated according to a reference etching rate and a reference plasma density variation rate, the reference etching rate and the reference plasma density variation rate being obtained within the first time T1 in the semiconductor etching area; obtaining a first comparison index by dividing the first residual index by the reference etching stability index; comparing the first comparison index with a first threshold value to obtain a comparison result; wherein, if the comparison result satisfies a first comparison range, a residual calibration strategy is executed, the residual calibration strategy including: calibrating a first lower radio frequency index and then calibrating a first upper radio frequency index according to the comparison result, the first lower radio frequency index and the first upper radio frequency index both including output power of the radio frequency power source; if the comparison result satisfies a second comparison range, a uniformity calibration strategy is executed, the uniformity calibration strategy including: calibrating a second upper radio frequency index and then calibrating a second lower radio frequency index according to the comparison result, the second lower radio frequency index and the second upper radio frequency index both including output power of the radio frequency power source.

[0009] According to an aspect of the embodiments of the present application, there is provided a radio frequency power output power calibration device for implementing a radio frequency power output power calibration method, comprising: a first residual index acquisition unit configured to acquire a first residual index, the first residual index being calculated according to a first etching rate and a first plasma density change rate, the first etching rate and the first plasma density change rate being acquired within a first time T1 in a semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density change rate and inversely correlated with the first etching rate; a reference etching stability index acquisition unit configured to acquire a reference etching stability index, the reference etching stability index being calculated according to a reference etching rate and a reference plasma density change rate, the reference etching rate and the reference plasma density change rate being acquired within the first time T1 in the semiconductor etching area; a first comparison index determination unit configured to obtain a first comparison index according to the first residual index and the reference etching stability index, the first comparison index being the first residual index divided by the reference etching stability index; a comparison unit configured to compare the first comparison index with a first threshold value to obtain a comparison result; and an execution residual calibration unit configured to execute a residual calibration strategy if the comparison result meets a first comparison range, the residual calibration strategy comprising: calibrating a first lower radio frequency index and then calibrating a first upper radio frequency index according to the comparison result, the first lower radio frequency index and the first upper radio frequency index both comprising radio frequency power output power; and a uniform calibration unit configured to execute a uniform calibration strategy if the comparison result meets a second comparison range, the uniform calibration strategy comprising: calibrating a second upper radio frequency index and then calibrating a second lower radio frequency index according to the comparison result, the second lower radio frequency index and the second upper radio frequency index both comprising radio frequency power output power.

[0010] The one or more technical solutions provided in the embodiments of the present application have at least the following technical effects:

[0011] Due to the radio frequency power supply output power calibration method and device and semiconductor process method, including: first, the first residual index is obtained, the first residual index is calculated according to the first etching rate and the first plasma density change rate, the first etching rate and the first plasma density change rate are obtained in the first time T1 in the semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density change rate and inversely correlated with the first etching rate; the reference etching stability index is obtained, the reference etching stability index is calculated according to the reference etching rate and the reference plasma density change rate, the reference etching rate and the reference plasma density change rate are obtained in the first time T1 in the semiconductor etching area; the first comparison index is obtained according to the first residual index and the reference etching stability index, the first comparison index is the first residual index divided by the reference etching stability index; the size of the first comparison index and the first threshold value is compared, and the comparison result is obtained. By monitoring the first residual index, that is, the comprehensive index of etching rate and plasma density change rate, the technical scheme can quickly distinguish the influence stage of the residual, that is, from the unstable stage of etching to the subsequent stable stage. This fast recognition ability makes the adjustment strategy of the radio frequency power supply more accurate for the specific needs of the current stage, thereby improving the efficiency and effect of the whole etching process. And improve the predictability of the etching process, by real-time monitoring and automatic adjustment of the radio frequency power supply, the scheme provides a method, which can make the etching process more controllable and predictable. This not only improves the convenience of operation, but also ensures that the technical personnel can make quick adjustments when needed to adapt to the real-time changes on the production line.

[0012] Secondly, if the comparison result meets the first comparison range, a residue calibration strategy is executed, which includes: according to the comparison result, first calibrating the first lower radio frequency index and then calibrating the first upper radio frequency index, both of which include radio frequency power output. After confirming the specific stage of residue influence, this scheme stabilizes the pedestal potential by adjusting the lower radio frequency power first, and then optimizes plasma generation by adjusting the upper radio frequency power, achieving the best etching effect. This collaborative calibration considers the mutual influence of upper and lower radio frequency power in different etching stages, thereby ensuring the maximum uniformity and efficiency of the etching process. The technical effect of adopting the residue calibration strategy is: first, targeted: in the initial etching stage, due to the presence of residues, stronger radio frequency indicators are needed to remove residues and stabilize the etching environment. Adjusting the lower radio frequency power index first is because it is connected to the pedestal that directly contacts the wafer, which can quickly adjust the bias voltage on the wafer and quickly process the residues, thereby improving etching uniformity and efficiency. Second, fast response: after quickly adjusting the lower radio frequency power, the adjustment of the upper radio frequency power index can more finely control the density and energy distribution of the plasma, optimizing the overall etching process. Furthermore, if the comparison result meets the second comparison range, a uniform calibration strategy is executed, which includes: according to the comparison result, first calibrating the second upper radio frequency index and then calibrating the second lower radio frequency index, both of which include radio frequency power output. The technical effect of adopting the uniform calibration strategy is: first, maintaining process uniformity: after the etching process reaches a relatively stable state, the uniform calibration strategy adjusts the upper radio frequency power first to uniformly control the plasma state in the entire chamber, and then adjusts the lower radio frequency power to finely adjust the wafer contact potential, in order to maintain etching depth and uniformity. Second, improve etching quality: by optimizing the global distribution of plasma and locally adjusting the wafer potential, over-etching and under-etching phenomena can be reduced, improving product yield. Furthermore, the residue calibration strategy and the uniform calibration strategy also have significant effects in overall coordination: first, dynamic identification and fast response: by monitoring the etching rate and plasma density change rate in real time, the presence of residues and their specific influence on the etching process are quickly identified. Real-time identification capability allows the adjustment strategy of radio frequency power output to quickly adapt to changes in the etching process, especially the transition from the residue processing stage to the stable etching stage. This fast response mechanism ensures immediate action when changes in etching conditions are detected, reducing etching quality problems caused by delayed adjustments. Second, collaborative adjustment of upper and lower radio frequency power: in the residue removal stage, the strategy first adjusts the lower radio frequency power to stabilize the wafer pedestal potential and effectively process the residues, and then adjusts the upper radio frequency power to optimize plasma conditions, achieving fast and effective residue removal.When the etching process reaches a more stable state, the plasma environment of the whole chamber is adjusted by first optimizing the upper radio frequency power, and then fine-tuning by the lower radio frequency power, so as to maintain the etching depth and uniformity. This coordinated adjustment strategy ensures the optimal allocation of radio frequency energy at each stage. Third, enhance the uniformity and quality of the etching process: the coordinated calibration strategy not only provides sufficient energy in the initial stage of processing residues, but also ensures the uniformity and repeatability of the process when the etching process enters the stable stage. Each etching stage can obtain the most suitable radio frequency power setting, thereby maximizing etching efficiency and product quality, and reducing the rate of defective products.

[0013] In summary, the radio frequency power output calibration method aims to optimize the adjustment of radio frequency indicators in the semiconductor etching process. By obtaining a first residual indicator and comparing it with a reference etching stable indicator, a first comparison indicator is obtained. According to the comparison result of the first comparison indicator and the first threshold value, it is determined to adopt the residue calibration strategy or the uniformity calibration strategy. The residue calibration strategy adjusts the first lower radio frequency indicator first and then adjusts the first upper radio frequency indicator; while the uniformity calibration strategy adjusts the second upper radio frequency indicator first and then adjusts the second lower radio frequency indicator. The residue calibration strategy adjusts the lower radio frequency power first and then adjusts the upper radio frequency power for larger deviations; while the uniformity calibration strategy adjusts the upper radio frequency power first to ensure the consistency of the etching process for small deviations. Both strategies achieve mutual coordination calibration of upper and lower radio frequency indicators, ensuring fast identification in the residue retention scenario and coordinating calibration of upper and lower radio frequency powers for different stages. This ensures calibration accuracy, solves the technical problem of the prior art that cannot quickly identify different stages of residue retention scenarios and coordinate calibration of output powers of upper and lower radio frequency powers for different stages, and achieves the technical effects of improving the adaptability and flexibility of the etching process and improving the predictability of the etching process and adapting to various complex etching environments. BRIEF DESCRIPTION OF DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0015] Figure 1 The structure diagram of the radio frequency power output calibration device in the prior art semiconductor process method;

[0016] Figure 2 The structure diagram of the radio frequency power output calibration device in the semiconductor process method of an embodiment of the present application;

[0017] Figure 3 A flow chart of a radio frequency power supply output power calibration method provided by an embodiment of the present application is shown in FIG. 1.

[0018] Figure 4 A flow chart of a radio frequency power supply output power calibration method provided by another embodiment of the present application is shown in FIG. 2.

[0019] Figure 5 A flow chart of a radio frequency power supply output power calibration method provided by another embodiment of the present application is shown in FIG. 3.

[0020] Figure 6 A flow chart of a radio frequency power supply output power calibration method provided by another embodiment of the present application is shown in FIG. 4.

[0021] Figure 7 A flow chart of a radio frequency power supply output power calibration method provided by another embodiment of the present application is shown in FIG. 5.

[0022] Figure 8 A flow chart of a radio frequency power supply output power calibration method provided by another embodiment of the present application is shown in FIG. 6.

[0023] Figure 9 A structural schematic diagram of an electronic device provided by an embodiment of the present application is shown in FIG. 7. DETAILED DESCRIPTION

[0024] The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings. In the description of the present application, terms such as “first”, “second”, “third” and the like are only used for distinguishing description, and cannot be understood as indicating or implying relative importance or sequence.

[0025] This invention aims to optimize the adjustment of radio frequency (RF) parameters during semiconductor etching. A first residual parameter is obtained and compared with a benchmark etching stability parameter to obtain a first comparison parameter. Based on the comparison result of the first comparison parameter and a first threshold, a residual calibration strategy or a uniform calibration strategy is determined. The residual calibration strategy prioritizes adjusting the first lower RF parameter before calibrating the first upper RF parameter; while the uniform calibration strategy first adjusts the second upper RF parameter before calibrating the second lower RF parameter. The residual calibration strategy addresses larger deviations by prioritizing the adjustment of the lower RF power supply before adjusting the upper RF power supply; while the uniform calibration strategy is suitable for smaller deviations by adjusting the upper RF power supply first to ensure the consistency of the etching process. Both strategies achieve mutual coordinated calibration of the upper and lower RF parameters. In residual retention scenarios, this ensures both rapid identification and coordinated calibration of the upper and lower RF power supplies for different stages, guaranteeing calibration accuracy. This solves the technical problem in existing technologies where it is impossible to quickly identify different stages of residual retention scenarios and coordinate the output power of the upper and lower RF power supplies for different stages. This achieves the technical effects of improving the adaptability and flexibility of the etching process, enhancing its predictability, and adapting to various complex etching environments.

[0026] To better understand the above technical solution, the following will refer to the accompanying drawings and specific implementation methods.

[0027] An embodiment of the present invention is as follows: Figure 2 This is a schematic diagram of the structure of an RF power supply output power calibration device in a semiconductor process method according to an embodiment of the present invention. Compared to the prior art, this embodiment of the present invention omits features such as... Figure 1 The existing phase-locked cable 14 overcomes the hardware limitations of phase-locked cables in semiconductor etching residue scenarios. It allows for rapid, flexible, and precise calibration of RF output power to address residue issues. Specifically, by overcoming the hardware limitations of phase-locked cables, the software phase-locking of this invention overcomes the limitations of hardware response speed. Phase-locked cables are designed for stability rather than speed, meaning they are not quick enough to handle rapidly changing dynamic conditions. The software phase-locking of this invention provides a rapid response, improving the efficiency and uniformity of etching processes requiring rapid power adjustments in residue scenarios. For example, the software phase-locking of this invention's RF power output power calibration method supports rapid changes in physical and electrical characteristics. Furthermore, software phase-locking eliminates the problem of inherent physical characteristics of phase-locked cables, such as inductance, capacitance, and resistance, affecting the quality and accuracy of transmitted signals. It allows for precise adjustment of the RF power output to address the impact of previous batches of residue on the current etching process, achieving ideal etching results.

[0028] Specifically, such as Figure 2As shown, it comprises an improved process chamber 130, an improved upper RF power supply 210 and an improved lower RF power supply 50, wherein the improved process chamber 130 is provided with an improved susceptor 100 (for example, an electrostatic chuck) for carrying an improved wafer 90, the improved lower RF power supply 50 is electrically connected to the improved susceptor 100 through an improved lower matching device 40 for loading bias power to the improved susceptor 100. Moreover, the top of the improved process chamber 130 is provided with an improved dielectric window 80, and above the improved dielectric window 80 is provided with an improved upper electrode, which comprises an improved outer coil 60 and an improved inner coil 70 of an improved inductive coupling coil, both of which are electrically connected to an improved current distribution unit 30, and the improved upper RF power supply 10 is electrically connected to the improved current distribution unit 30 through an improved upper matching device 20 for loading RF power to the improved outer coil 60 and the improved inner coil 70 through the improved upper matching device 20 and the improved current distribution unit 30, and the RF energy is coupled into the improved process chamber 130 through the improved dielectric window 80. In addition, the improved dielectric window 80 is also provided with an improved nozzle 120 for introducing process gas into the improved process chamber 130. The above-mentioned RF energy can excite the process gas to generate an improved plasma 110. In the embodiment of the present application, the phase difference of the output waveforms of the improved upper RF power supply 210 and the improved lower RF power supply 50 can be adjusted by using a software phase-locked method, that is, a Common Exciter (CEX) phase-locked angle, so as to adjust the coupling phase difference between the improved upper electrode and the improved lower electrode of the improved process chamber 130 on the surface of the improved wafer 90, thereby affecting the ion energy and the sheath potential above the improved wafer 90, and further changing the etching rate and the Map distribution of the improved wafer 90. Optionally, in the residue retention scenario, the control of the RF power supply no longer depends on the physically connected phase-locked cable, but adjusts and controls the phase difference of the output waveforms of the RF power supply through a software algorithm. Optionally, the digital signal processing technology is used to accurately calculate and adjust the phase difference between the RF power supplies, allowing more flexible and faster response to the influence of residues on the etching process.

[0029] Figure 3 A flow chart of a RF power output power calibration method provided by an embodiment of the present application is shown in Figure 3 As shown, it comprises the following steps:

[0030] In step 310, a first residue index is obtained, which is calculated according to a first etching rate and a first plasma density change rate, both of which are obtained within a first time T1 in a semiconductor etching area, wherein the first residue index is positively correlated with the first plasma density change rate and inversely correlated with the first etching rate; wherein the semiconductor etching area can be as shown in Figure 2The semiconductor etching region near the modified wafer 90 is improved.

[0031] In particular, in the presence of residue etching scenarios, especially when using plasma for etching, the impact of residue is a key issue that can significantly affect the efficiency and uniformity of the etching process. Therefore, it is crucial to quickly and accurately assess the impact of residue to ensure the quality and yield of semiconductor manufacturing. First, the first residue indicator is positively correlated with the first plasma density change rate because a high first plasma density change rate means that more active plasma particles are involved in the etching process. Positive correlation means that when the value of one variable increases, the value of the other variable also increases. The positive correlation between the first residue indicator and the first plasma density change rate means that when the first plasma density change rate increases, the first residue indicator also increases. This relationship generally indicates that an increase in plasma density change rate reflects more plasma activity because more residue needs to be processed or because the etching process needs more energy to overcome the obstacles caused by residue. In the presence of more residue, more plasma energy is needed to remove the residue or adjust the etching process to achieve the desired etching depth and morphology. Therefore, when the plasma density change rate is high, the impact of residue can be quantified. Second, the first residue indicator is inversely correlated with the first etching rate, which means that when the value of one variable increases, the value of the other variable decreases. The inverse correlation between the first residue indicator and the first etching rate means that when the etching rate increases, the first residue indicator decreases. Because a higher etching rate indicates a smoother etching process with less residue impact, the first residue indicator (reflecting the amount or impact of residue) accordingly decreases. This is because etching rate is a direct indicator of evaluating the efficiency of the etching process. Ideally, in the absence of residue, there should be a higher etching rate because the etching process is not hindered. However, in the presence of residue, these substances hinder the interaction between plasma and wafer surface, thereby reducing the etching rate. Therefore, a low first etching rate means a higher residue impact, so that the first residue indicator is inversely correlated with the first etching rate to reflect the hindering effect of residue on etching efficiency. When the first residue indicator is high, it indicates that the impact of residue on the etching process is large. This is because there is a large amount of residue, or the type of residue has a strong absorption or shielding effect on plasma, hindering the effective action of plasma. Therefore, the high value of this indicator directly reflects the significant role of residue in this batch.

[0032] Alternatively, the first residue indicator can be obtained by the following formula: R = w Δρ *Norm Δρ +w ER *(1-Norm ER ), wherein: Norm Δρ= (Δρ - Δρ min ) / (Δρ max - Δρ min ); Norm ER = (ER - ER min ) / (ER max - ER min ), where ER is the first etching rate. Δρ is the first plasma density change rate. ER min and ER max are the minimum and maximum values of the observed first etching rate. Δρ min and Δρ max are the minimum and maximum values of the observed first plasma density change rate. w Δρ is the weight of the normalized first plasma density change rate. w ER is the weight of the normalized first etching rate. In the formula, Norm Δρ : Directly use the normalized plasma density change rate because it is positively correlated with the residue index, the more residue, the greater the plasma change rate may be. In the formula, 1 - Norm ER : Use 1 minus the normalized etching rate because lower etching rate may indicate greater residue impact, so it is inversely related to the residue index. This formula intuitively reflects the impact of residue on the etching process, ensuring data comparability under different equipment or conditions through normalization, helping to quickly adjust process parameters to cope with the impact of residue, maintaining the stability and efficiency of the production process.

[0033] In step 320, a reference etching stability index is obtained, which is calculated according to a reference etching rate and a reference plasma density change rate, both of which are obtained within a first time T1 in a semiconductor etching area. The semiconductor etching area can be, for example, the semiconductor etching area near the modified wafer 90 in the embodiment of the application. The reference etching stability index is positively correlated with the reference plasma density change rate and inversely correlated with the reference etching rate. Figure 2

[0034] Specifically, the same calculation method of the first residue index is used to obtain the reference etching stability index, which can more accurately and effectively obtain the comparison results. In the process of semiconductor etching, especially in the presence of residue, it is crucial to identify and adapt to different etching stages. The setting of the reference etching stability index aims to provide a reference point for this process, so as to measure the deviation between the current etching operation and the ideal or expected operation condition. This index needs to combine etching rate and plasma density change rate, which are the key factors for evaluating the efficiency and quality of semiconductor etching. ​

[0035] Step 330, obtaining a first relative index according to the first residual index and the reference etching stability index, the first relative index being the first residual index divided by the reference etching stability index.

[0036] Specifically, by dividing the first residual index by the reference etching stability index, the obtained relative index is a ratio, which directly indicates the performance of the current batch relative to the ideal or reference condition. Using the relative index in the form of a ratio, it is easier to set a unified control threshold and strategy. For example, a fixed ratio threshold (e.g. 1.2) can be set based on experience or experimental data to determine when a specific calibration measure should be taken. This way simplifies the control logic, making the response strategy more direct and explicit.

[0037] Step 340, comparing the first relative index with a first threshold to obtain a comparison result.

[0038] Specifically, the first threshold needs to be set at a reasonable level to distinguish different etching states and necessary adjustment levels. This threshold represents that when the ratio of the first residual index to the reference etching stability index exceeds a certain specific value, a specific calibration measure needs to be taken. First, evaluate the sensitivity of the etching process: the first step is to evaluate the sensitivity of the etching process to the residue. If the residue has a greater impact on the etching process (e.g. affecting the etching uniformity or rate), a lower threshold is needed to identify and respond to these changes earlier. Second, analyze historical data: by analyzing the ratio of the first residual index to the reference etching stability index in historical data, the critical point affecting yield or quality can be identified. It is crucial to choose a threshold that can reflect significant changes and has a significant difference before and after. Third, determine through experiments: by controlling experiments, changing the amount of residue, and observing the impact of different levels of residue on the etching process. Record the ratio of the first residual index to the reference etching stability index under these conditions to determine an experimental-based threshold. Alternatively, a specific example, alternatively, it is found through data analysis that when the ratio of the first residual index to the reference etching stability index is greater than 1.2, the etching process begins to show significant quality decline. In this case, 1.2 can be set as the first threshold. This means that if the first relative index (such as 1.3 or higher) indicates that the current batch of residues has a greater impact on etching, residue calibration strategies need to be taken. If the first relative index is less than 1.2 (such as 1.1), it indicates that the current residue level is within a controllable range.

[0039] Step 350, if the comparison result meets a first comparison range, executing a residue calibration strategy, the residue calibration strategy including: calibrating a first lower radio frequency index and a first upper radio frequency index according to the comparison result, the first lower radio frequency index and the first upper radio frequency index both including radio frequency power output.

[0040] Specifically, after confirming the specific stage of the influence of the residues, the scheme stabilizes the pedestal potential by adjusting the lower radio frequency power first, and then adjusts the upper radio frequency power to optimize the plasma generation, so as to achieve the best etching effect. This cooperative calibration takes into account the mutual influence of the upper and lower radio frequency powers in different etching stages, thereby ensuring the maximum uniformity and efficiency of the etching process. The technical effect of adopting the residue calibration strategy is: first, strong pertinence: in the initial stage of etching, due to the existence of residues, stronger radio frequency indicators are needed to remove the residues and stabilize the etching environment. The lower radio frequency power indicator is adjusted first because it is connected to the pedestal which directly contacts the wafer, so it can quickly adjust the bias voltage on the wafer and quickly process the residues, thereby improving the etching uniformity and efficiency. Second, fast response: after quickly adjusting the lower radio frequency power, the adjustment of the upper radio frequency power indicator can more finely control the density and energy distribution of the plasma, thereby optimizing the overall etching process.

[0041] Step 360, if the comparison result meets the second comparison range, a uniform calibration strategy is executed, and the uniform calibration strategy includes: according to the comparison result, the second upper radio frequency indicator is calibrated first and then the second lower radio frequency indicator is calibrated, and the second lower radio frequency indicator and the second upper radio frequency indicator both include radio frequency power output.

[0042] Specifically, the technical effect of adopting the uniform calibration strategy is: first, maintaining process uniformity: after the etching process reaches a relatively stable state, the uniform calibration strategy can uniformly control the plasma state in the entire chamber by adjusting the upper radio frequency power first, and then finely adjusts the wafer contact potential through the lower radio frequency power, so as to maintain the etching depth and uniformity. Second, improve etching quality: by optimizing the global distribution of the plasma and locally adjusting the wafer potential, the over-etching and under-etching phenomena can be reduced, and the product yield can be improved.

[0043] Further, the residue calibration strategy and the uniformity calibration strategy also have significant effects on the overall synergy: first, dynamic identification and rapid response: by monitoring the etching rate and the plasma density change rate in real time, the presence of residues and their specific impact on the etching process are quickly identified. The real-time identification capability allows the adjustment strategy of the radio frequency power output to quickly adapt to changes in the etching process, especially the transition from the residue processing stage to the stable etching stage. This rapid response mechanism ensures immediate action when changes in etching conditions are detected, reducing etching quality problems caused by delayed adjustments. Second, coordinated adjustment of upper and lower radio frequency power sources: in the residue removal stage, the strategy first adjusts the lower radio frequency power source to stabilize the potential of the wafer pedestal, effectively processes the residues, and then adjusts the upper radio frequency power source to optimize the plasma conditions, achieving rapid and effective residue removal. When the etching process reaches a more stable state, the plasma environment of the entire chamber is adjusted by optimizing the upper radio frequency power source first, and then fine-tuned by the lower radio frequency power source to maintain etching depth and uniformity. This coordinated adjustment strategy ensures optimal allocation of radio frequency energy at each stage. Third, enhance the uniformity and quality of the etching process: the coordinated calibration strategy provides sufficient energy not only in the initial stage to handle residues but also ensures process uniformity and repeatability when the etching process enters a stable stage. Each etching stage can obtain the most suitable radio frequency power settings, maximizing etching efficiency and product quality, and reducing defective rates.

[0044] An embodiment of the present application, Figure 4 The flowchart of the radio frequency power output power calibration method provided by another embodiment of the present application further comprises, before acquiring the first residue index of the semiconductor etching area.

[0045] In step 410, an etching reference index is acquired, which includes physical and chemical indexes of the semiconductor to be etched, etching environment indexes, and etching gas characteristic indexes.

[0046] Specifically, the etching reference index is a set of parameters that measure and describe various environmental and material conditions during the etching process. The etching reference index is determined through a series of pre-trials at the beginning of setting the process parameters, and is used as a standard for performance comparison and calibration in the subsequent production process. The physical index of the semiconductor to be etched includes the thickness, flatness, and surface roughness of the semiconductor wafer, which directly affects the uniformity and precision of the etching process. The chemical index of the semiconductor to be etched involves the material composition and impurity content of the wafer, which affects the etching rate and the surface quality after etching. The etching environmental index includes the temperature, humidity, and cleanliness level of the clean room during the etching process. Fluctuations in environmental conditions can have a significant impact on the etching results, so they must be strictly controlled. The etching gas characteristic index involves the type, flow rate, pressure, and purity of the etching gas used. Different gases and gas conditions (such as flow rate and pressure) will directly determine the characteristics of the plasma, which in turn affects the etching rate and uniformity.

[0047] At step 420, the upper RF reference index and the lower RF reference index are determined according to the etching reference index. The upper RF reference index includes an upper RF reference power and an upper RF reference frequency, and the lower RF reference index includes a lower RF reference power and a lower RF reference frequency.

[0048] Specifically, the most reasonable upper RF reference index and lower RF reference index corresponding to the etching reference index can be determined according to pre-experiments. As an optional example, a silicon-based material needs to be etched in the semiconductor manufacturing process, and the material has standard physical and chemical properties. The etching reference index has been obtained through a series of pre-trials. The etching reference index is as follows: physical index: the thickness of the silicon wafer is 200 μm. Chemical index: CF4 is used as the main etching gas. Etching environmental index: room temperature environment, pressure is set to 50 mTorr. The execution of step 420 is as follows: first, determine the upper RF reference index, the upper RF reference power: since the etching of silicon requires a higher plasma density to increase the etching rate, a higher power setting is selected. Based on previous experimental data, the power selected may be between 300 and 500 W to ensure the effective generation and maintenance of the plasma. The upper RF reference frequency: high frequency helps to quickly excite and maintain the plasma. For CF4 etching of silicon material, 13.56 MHz is used to optimize energy transfer. Second, determine the lower RF reference index, wherein the lower RF reference power: the lower RF is mainly used to adjust the ion energy and control the properties of ion bombardment on the wafer. In order to control the etching depth and profile, the lower RF power is usually low, such as 50 to 200 W. For the lower RF reference frequency, low frequency helps to increase the ion bombardment energy, in the range of 400 kHz to 2 MHz, to improve the energy distribution of ions and etching uniformity.

[0049] Step 430, according to the upper radio frequency reference index, the radio frequency output of the upper radio frequency power supply.

[0050] Step 440, according to the lower radio frequency reference index, the radio frequency output of the lower radio frequency power supply.

[0051] In an embodiment of the present application, the first comparison range is the range where the first comparison index is greater than or equal to the first threshold value.

[0052] Specifically, the presence of residues during etching can significantly affect the etching efficiency and results, especially when residues affect the stability of the plasma or directly hinder the etching material. In this case, the first residue index will be relatively high because it includes both high plasma density change rate and low etching rate, which are associated with the case of more residues. The first comparison index (the first residue index divided by the reference etching stability index) is to quantify the deviation between the current batch and the ideal or reference condition. When this ratio is greater than or equal to the first threshold value, it means that the etching state of the current batch has a significant difference compared to the reference state, and needs to be adjusted.

[0053] According to the comparison result, the first lower radio frequency reference index is calibrated first, and then the first upper radio frequency reference index is calibrated. The first upper radio frequency reference index includes a first upper radio frequency power and a first upper radio frequency frequency, and the first lower radio frequency reference index includes a first lower radio frequency power and a first upper radio frequency frequency. In the residue calibration scenario, the power and frequency of the radio frequency power supply are both key parameters, which have a direct impact on the control of the etching process. Adjusting these two parameters not only optimizes the etching process, but also deals with the instability caused by residues. The following are the main advantages and reasons for adjusting the power and frequency: first, enhance the flexibility and accuracy of the etching process: first, power adjustment: the radio frequency power directly affects the density and energy of the plasma, and then affects the etching rate and depth. Adjusting the power can help control the activity of the plasma in the etching process, especially in the case of more residues, increasing the power helps to accelerate the removal of etching materials. Second, frequency adjustment: the radio frequency frequency determines the acceleration and collision frequency of the electrons in the plasma, which in turn affects the ionization efficiency and energy distribution of the plasma. Adjusting the frequency can help optimize the interaction between the plasma and the material surface, making the etching process more uniform and effective. Second, adapt to different etching needs: in batches where residues have a significant impact, simply adjusting the power is not enough to achieve the desired etching effect. The adjustment of the frequency can provide additional control means to deal with the etching problems caused by residues by changing the ionization characteristics and the reaction dynamics of the plasma. Third, improve etching uniformity and quality: combining power and frequency adjustment can more carefully control the generation and maintenance of the plasma, especially in complex semiconductor materials and structures. This comprehensive control helps to reduce the etching non-uniformity caused by uneven plasma distribution, thereby improving product consistency and reliability. Fourth, optimize energy use and efficiency: precise power and frequency adjustment can avoid excessive use of radio frequency energy, reduce energy consumption, and ensure etching efficiency and effectiveness. This optimization makes the process more economical, while reducing equipment wear and maintenance requirements.

[0054] Specifically, if the first comparison index indicates that the residue has a greater impact (i.e., the index is higher than or equal to the threshold value), the lower radio frequency power supply (responsible for providing the base bias power, affecting the ion bombardment energy) is adjusted first, and then the upper radio frequency power supply (responsible for plasma generation) is adjusted. Such an order ensures that the main problem affecting etching depth and rate is solved first, and then the generation and maintenance of the plasma are optimized to restore to the ideal etching conditions.

[0055] An embodiment of the present application, Figure 5 And Figure 6 A flowchart of a radio frequency power output power calibration method provided by another embodiment of the present application, comprising the following steps.

[0056] Step 510, determining the first compensation power and the first compensation frequency according to the comparison result.

[0057] wherein determining the first compensation power and the first compensation frequency according to the comparison result further comprises: step 610, obtaining the first power compensation factor and the first frequency compensation factor according to the first phase ratio index and the first threshold value.

[0058] Specifically, the method for calculating the compensation factor, optionally, the first power compensation factor (P factor ) can adopt a linear or nonlinear model to calculate the required power adjustment amount according to the difference between the first phase ratio index and the first threshold value. For example, the formula example is: P factor = k p *(first phase ratio index-first threshold value), wherein k p is a preset constant for determining the sensitivity of power adjustment. The first frequency compensation factor (F faceor ) is also determined according to the difference between the first phase ratio index and the first threshold value to determine how much frequency adjustment is required. The formula example is: F faceor = k f *(first phase ratio index-first threshold value), wherein kf is a preset constant for determining the sensitivity of frequency adjustment. Implement adjustment: adjust the output power and frequency of the radio frequency power supply according to the calculated first power compensation factor and first frequency compensation factor to cope with the influence of residues and restore the stability and efficiency of the etching process. For example, the example is: for example, the first phase ratio index is 1.2, the first threshold value is set to 1.0, k p = 0.05, k f = 0.02; the first power compensation factor: P factor = 0.05*(1.2-1.0) = 0.01 (indicating that 1% of power needs to be increased), the first frequency compensation factor: F factor = 0.02*(1.2-1.0) = 0.004 (indicating that 0.4% of frequency needs to be increased). Wherein the constants k p and k f in the compensation factor can be determined by historical data analysis, process sensitivity test, simulation and modeling, etc. For example, optionally, first, data collection: collect sufficient operation data, especially the system response data when changing the radio frequency settings. Second, small-scale test: change the radio frequency settings in a controlled environment and record the etching rate, plasma changes and chip quality, etc. Third, data analysis and model verification: analyze the test data using statistical and modeling tools to verify the prediction accuracy of the model. Fourth, expert review: let experienced engineers and technical experts review the model and test results and provide feedback. Fifth, set and optimize the constants k p and kf .

[0059] Step 620, obtaining a first compensation power according to the first power compensation factor and the down radio frequency reference power; and step 630, obtaining a first compensation frequency according to the first frequency compensation factor and the down radio frequency reference frequency.

[0060] Specifically, the reference power and frequency are adjusted by using the compensation factors, wherein the first compensation power = the down radio frequency reference power × (1 + P factor ), and the first compensation frequency = the down radio frequency reference frequency × (1 + F factor ). For example, if the reference power is 1000W and the reference frequency is 13MHz, the first compensation power = 1000W × (1 + 0.01) = 1010W; and the first compensation frequency = 13MHz × (1 + 0.004) = 13.052MHz, wherein P factor is the first power compensation factor, and F factor is the first frequency compensation factor.

[0061] Step 520, calibrating the down radio frequency reference power to a first down radio frequency power according to the first compensation power.

[0062] Specifically, the first down radio frequency power is set equal to the first compensation power. For example, according to the above example, the down radio frequency power is set to the first compensation power 1010W.

[0063] Step 530, calibrating the down radio frequency reference frequency to a first down radio frequency frequency according to the first compensation frequency.

[0064] Specifically, the first down radio frequency frequency is set equal to the first compensation power. According to the above example, the down radio frequency power is set to the first compensation power first compensation frequency 13.052MHz.

[0065] Step 540, calibrating the up radio frequency reference power to a first up radio frequency power according to the first down radio frequency power and a reference phase lock angle.

[0066] Specifically, the reference phase lock angle can be set according to pre-experimental or simulated manners.

[0067] Step 550, calibrating the up radio frequency reference frequency to a first up radio frequency frequency according to the first down radio frequency frequency and a reference frequency adjustment factor, wherein the reference frequency adjustment factor is obtained according to the conductivity and ionization rate of the reference plasma, the down radio frequency reference frequency and the up radio frequency reference frequency when the reference state is reached.

[0068] Specifically, the reference frequency adjustment factor can be set according to pre-experimental or simulated manners.

[0069] After the up radio frequency reference index is calibrated as the first up radio frequency index according to the first down radio frequency index, the method further comprises.

[0070] At step 560, performing radio frequency output of the down radio frequency power source according to the first down radio frequency power and the first down radio frequency frequency.

[0071] At step 570, performing radio frequency output of the up radio frequency power source according to the first up radio frequency power and the first up radio frequency frequency.

[0072] In an embodiment of the present application, the second comparison range is a range in which the first comparison index is less than the first threshold value; when the first comparison index is less than the first threshold value, it means that the influence of the residue on the etching process is small. This small deviation indicates that the etching conditions of the current batch are less affected by the residue, and more attention needs to be paid to the uniformity and consistency of the etching.

[0073] According to the comparison result, the second up radio frequency index is calibrated first and then the second down radio frequency index is calibrated, which comprises: according to the comparison result, the up radio frequency reference index is calibrated as the second up radio frequency index, and according to the second up radio frequency index, the down radio frequency reference index is calibrated as the second down radio frequency index, wherein the second up radio frequency index comprises a second up radio frequency power and a second up radio frequency frequency, and the second down radio frequency index comprises a second down radio frequency power and a second up radio frequency frequency.

[0074] In an embodiment of the present application, Figure 7 and Figure 8 A flow chart of a radio frequency power source output power calibration method provided by another embodiment of the present application, which comprises the following steps.

[0075] According to the comparison result, the up radio frequency reference index is calibrated as the second up radio frequency index, which further comprises: at step 710, according to the comparison result, it is determined to perform detection of a second plasma density change rate, which is a plasma density change rate in the up radio frequency nozzle area within a first time T1;

[0076] At step 720, according to the second plasma density change rate, a second compensation power and a second compensation frequency are determined.

[0077] According to the second plasma density change rate, the second compensation power and the second compensation frequency are determined, which further comprises: at step 810, a second reference plasma density change rate is obtained, which is a reference plasma density change rate in the up radio frequency nozzle area within the first time T1;

[0078] Step 820, obtaining a second difference rate of change according to the second reference plasma density rate of change and the second reference plasma density rate of change, the second difference rate of change being an absolute value of a difference between the second reference plasma density rate of change and the second reference plasma density rate of change;

[0079] Step 830, comparing the second difference rate of change with the second threshold value;

[0080] Step 840, if the second difference rate of change is greater than the second threshold value, obtaining a second power compensation factor and a second frequency compensation factor according to the second difference rate of change and the second threshold value; obtaining a second compensation power according to the second power compensation factor and the upper radio frequency reference power; and obtaining a second compensation frequency according to the second frequency compensation factor and the upper radio frequency reference frequency;

[0081] Step 850, if the second difference rate of change is less than the second threshold value, determining that the second compensation power and the second compensation frequency are both 0. Specifically, if the second difference rate of change is less than the second threshold value, it is considered that the etching uniformity meets the requirements and no adjustment is needed.

[0082] Step 730, calibrating the upper radio frequency reference power to a second upper radio frequency power according to the second compensation power. Specifically, the second upper radio frequency power is set to be equal to the second compensation power.

[0083] Step 740, calibrating the upper radio frequency reference frequency to a second upper radio frequency frequency according to the second compensation frequency. Specifically, the second upper radio frequency frequency is set to be equal to the second compensation frequency.

[0084] After calibrating the lower radio frequency reference index to the second lower radio frequency index according to the second upper radio frequency index, the method further comprises: step 750, calibrating a lower radio frequency reference power to a second lower radio frequency power according to the second upper radio frequency power and the reference phase-locked angle;

[0085] Step 760, calibrating the lower radio frequency reference frequency to a second lower radio frequency frequency according to the second upper radio frequency frequency and a reference frequency adjustment factor; the reference frequency adjustment factor being obtained according to the conductivity and ionization rate of the reference plasma, the lower radio frequency reference frequency and the upper radio frequency reference frequency when the reference state is reached;

[0086] After calibrating the lower radio frequency reference index to the second lower radio frequency index according to the second upper radio frequency index, the method further comprises: step 770, performing radio frequency output of the upper radio frequency power source according to the second upper radio frequency power and the second upper radio frequency frequency;

[0087] Step 780, performing radio frequency output of the lower radio frequency power source according to the second lower radio frequency power and the second lower radio frequency frequency.

[0088] A preferred embodiment of the above steps 710-780, in particular, the first aspect, the second plasma density variation rate is the variation rate of the measured plasma density in the upper RF nozzle region within a specific time point T1. This variation rate reflects the change of the plasma density from the beginning of the etching process to the current time point, and is an important indicator for judging the uniformity of the current etching state. The second aspect, the second difference variation rate is the absolute value of the difference between the second plasma density variation rate and the second reference plasma density variation rate (a variation rate under an ideal or normal etching condition). This difference indicates the deviation between the actual etching state and the ideal state. The third aspect, the second threshold value is a preset standard for judging whether the second difference variation rate is within an acceptable range. If the second difference variation rate exceeds this threshold value, it indicates that the current etching state deviates greatly from the uniform state, and adjustment of the etching uniformity and consistency is needed. The fourth aspect, the second power compensation factor and the second frequency compensation factor: these compensation factors are calculated based on the difference between the second difference variation rate and the second threshold value. They determine how much power and frequency need to be adjusted in order to bring the etching process back to the uniform state. The fifth aspect, the second compensation power and the second compensation frequency: according to the second power compensation factor and the second frequency compensation factor, the values of the power and frequency that need to be adjusted are calculated. These adjustments directly affect the output of the RF power supply, thereby affecting the characteristics of the plasma and the etching process. A preferred example, assuming that the second reference plasma density variation rate is 2% / min, and the measured second plasma density variation rate is 5% / min. Set the second threshold value to 1% / min. First, calculate the second difference variation rate: second difference variation rate = |5% - 2% | = 3% / min. Second, compare with the second threshold value: 3% > 1%, indicating that adjustment is needed; third, set the compensation coefficient: assuming that the second power compensation coefficient (k p ) = 0.1 and the second frequency compensation factor (k f ) = 0.05, where the second power compensation coefficient (k p ) and the second frequency compensation factor (k f ) can be obtained based on pre-experiments or data modeling. Third, calculate the compensation factor: second power compensation factor = 0.1 * (3% - 1%) = 0.2; second frequency compensation factor = 0.05 * (3% - 1%) = 0.1; fourth, apply compensation: if the lower RF reference power is 1000 W and the reference frequency is 13 MHz, then: second compensation power = 1000 W + (1000 W * 0.2) = 1200 W; second compensation frequency = 13 MHz + (13 MHz * 0.1) = 14.3 MHz. In this way, by adjusting the RF power and frequency according to the plasma density variation, the etching process can be effectively controlled, ensuring product quality and process stability.

[0089] An embodiment of the present application is a radio frequency power output power calibration device for implementing the calibration method, comprising: a first residual index acquisition unit, configured to acquire a first residual index, the first residual index being calculated according to a first etching rate and a first plasma density change rate, the first etching rate and the first plasma density change rate being acquired within a first time T1 in a semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density change rate and inversely correlated with the first etching rate; a reference etching stability index acquisition unit, configured to acquire a reference etching stability index, the reference etching stability index being calculated according to a reference etching rate and a reference plasma density change rate, the reference etching rate and the reference plasma density change rate being acquired within the first time T1 in the semiconductor etching area; a first relative index determination unit, configured to obtain a first relative index according to the first residual index and the reference etching stability index, the first relative index being the first residual index divided by the reference etching stability index; a comparison unit, configured to compare the first relative index with a first threshold value to obtain a comparison result; a residual calibration unit, configured to execute a residual calibration strategy if the comparison result meets a first comparison range, the residual calibration strategy comprising: calibrating a first lower radio frequency index and then calibrating a first upper radio frequency index according to the comparison result, the first lower radio frequency index and the first upper radio frequency index both comprising radio frequency power output power; a uniform calibration unit, configured to execute a uniform calibration strategy if the comparison result meets a second comparison range, the uniform calibration strategy comprising: calibrating a second upper radio frequency index and then calibrating a second lower radio frequency index according to the comparison result, the second lower radio frequency index and the second upper radio frequency index both comprising radio frequency power output power.

[0090] Another embodiment of the present application is a semiconductor process method, the semiconductor process method comprising a semiconductor etching process method, the semiconductor etching process method comprising the radio frequency power output power calibration method as described above.

[0091] Figure 9 An example of a schematic diagram of a physical structure of an electronic device is shown in Figure 9 As shown, the electronic device 900 can include a processor 901, a communications interface 902, a memory 903, and a communications bus 904, wherein the processor 901, the communications interface 902, and the memory 903 complete mutual communication through the communications bus 904. The processor 901 can invoke a logical instruction in the memory 903 to execute the dust removal parameter control method based on the surface roughness of the perovskite battery layer provided by each of the above methods.

[0092] In addition, the logic instructions in the memory 903 described above can be implemented in the form of software functional units and sold or used as independent products, and can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application essentially or the parts that contribute to the prior art or parts of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods of the embodiments of the present application. The foregoing storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.

[0093] In another aspect, the present application also provides a computer program product, which comprises a computer program, the computer program can be stored on a non-transitory computer readable storage medium, and the computer program is executed by a processor, so that the computer can execute the above-mentioned method for controlling the dust removal parameter based on the surface roughness of the perovskite battery layer.

[0094] The device embodiments described above are only schematic, wherein the units illustrated as separate components can or can not be physically separate, and the components illustrated as units can or can not be physical units, i.e., can be located in one place, or can be distributed on multiple network units. Part or all of the modules can be selected according to actual needs to achieve the purpose of the present embodiment. Those skilled in the art can understand and implement without creative labor.

[0095] From the above description of the embodiments, those skilled in the art can clearly understand that the embodiments can be realized by means of software plus necessary universal hardware platforms, and of course can also be realized by hardware. Based on such understanding, the above technical solutions essentially or the parts that contribute to the prior art can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, etc., and includes a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods of the embodiments or some parts of the embodiments.

[0096] It should be pointed out finally that the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit the same; and although the present application has been described in detail with reference to the foregoing embodiments, it should be appreciated by those skilled in the art that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features thereof can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method of radio frequency power supply output power calibration, characterized by, The method comprises: obtaining a first residual index, wherein the first residual index is calculated according to a first etching rate and a first plasma density change rate, and the first etching rate and the first plasma density change rate are obtained within a first time T1 of a semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density change rate and is inversely correlated with the first etching rate; obtaining a reference etching stability index, wherein the reference etching stability index is calculated according to a reference etching rate and a reference plasma density change rate, and the reference etching rate and the reference plasma density change rate are obtained within the first time T1 of the semiconductor etching area; obtaining a first comparison index according to the first residual index and the reference etching stability index, wherein the first comparison index is the first residual index divided by the reference etching stability index; comparing the first comparison index with a first threshold value to obtain a comparison result; wherein if the comparison result meets a first comparison range, a residual calibration strategy is executed, and the residual calibration strategy comprises: calibrating a first lower radio frequency index and then calibrating a first upper radio frequency index according to the comparison result, wherein the first lower radio frequency index and the first upper radio frequency index both comprise radio frequency power output of a radio frequency power supply; if the comparison result meets a second comparison range, a uniformity calibration strategy is executed, and the uniformity calibration strategy comprises: calibrating a second upper radio frequency index and then calibrating a second lower radio frequency index according to the comparison result, wherein the second lower radio frequency index and the second upper radio frequency index both comprise radio frequency power output of a radio frequency power supply.

2. The method of claim 1, wherein, Before obtaining the first residual index of the semiconductor etching area, the method further comprises: obtaining an etching reference index, wherein the etching reference index comprises physical and chemical indexes of a semiconductor to be etched, etching environment indexes, and etching gas characteristic indexes; determining an upper radio frequency reference index and a lower radio frequency reference index according to the etching reference index, wherein the upper radio frequency reference index comprises an upper radio frequency reference power and an upper radio frequency reference frequency, and the lower radio frequency reference index comprises a lower radio frequency reference power and a lower radio frequency reference frequency; performing radio frequency output of an upper radio frequency power supply according to the upper radio frequency reference index; performing radio frequency output of a lower radio frequency power supply according to the lower radio frequency reference index.

3. The method of claim 2, wherein, The first comparison range is a range in which the first comparison index is greater than or equal to the first threshold value. Calibrating the first lower radio frequency index and then calibrating the first upper radio frequency index according to the comparison result comprises: calibrating the lower radio frequency reference index as the first lower radio frequency index according to the comparison result, and calibrating the upper radio frequency reference index as the first upper radio frequency index according to the first lower radio frequency index, wherein the first upper radio frequency index comprises a first upper radio frequency power and a first upper radio frequency frequency, and the first lower radio frequency index comprises a first lower radio frequency power and a first upper radio frequency frequency.

4. The method of claim 3, wherein ​ The calibration of the lower radio frequency reference index to the first lower radio frequency index according to the comparison result further comprises: determining a first compensation power and a first compensation frequency according to the comparison result; calibrating the lower radio frequency reference power to the first lower radio frequency power according to the first compensation power; and calibrating the lower radio frequency reference frequency to the first lower radio frequency frequency according to the first compensation frequency. The calibration of the upper radio frequency reference index to the first upper radio frequency index according to the first lower radio frequency index further comprises: calibrating the upper radio frequency reference power to the first upper radio frequency power according to the first lower radio frequency power and a reference phase-locked angle; and calibrating the upper radio frequency reference frequency to the first upper radio frequency frequency according to the first lower radio frequency frequency and a reference frequency adjustment factor, the reference frequency adjustment factor being determined according to the conductivity and ionization rate of the reference plasma, the lower radio frequency reference frequency and the upper radio frequency reference frequency at the reference state. After the calibration of the upper radio frequency reference index to the first upper radio frequency index according to the first lower radio frequency index, the method further comprises: performing radio frequency output of the lower radio frequency power supply according to the first lower radio frequency power and the first lower radio frequency frequency; and performing radio frequency output of the upper radio frequency power supply according to the first upper radio frequency power and the first upper radio frequency frequency.

5. The method of claim 4, wherein, The determination of the first compensation power and the first compensation frequency according to the comparison result comprises: obtaining a first power compensation factor and a first frequency compensation factor according to the first relative index and a first threshold value; obtaining the first compensation power according to the first power compensation factor and the lower radio frequency reference power; obtaining the first compensation frequency according to the first frequency compensation factor and the lower radio frequency reference frequency.

6. The method of claim 2, wherein, The second comparison range is a range in which the first relative index is less than the first threshold value. The calibration of the lower radio frequency reference index to the second lower radio frequency index after the calibration of the upper radio frequency reference index to the second upper radio frequency index according to the comparison result comprises: calibrating the upper radio frequency reference index to the second upper radio frequency index according to the comparison result, and calibrating the lower radio frequency reference index to the second lower radio frequency index according to the second upper radio frequency index, wherein the second upper radio frequency index comprises a second upper radio frequency power and a second upper radio frequency frequency, and the second lower radio frequency index comprises a second lower radio frequency power and a second upper radio frequency frequency.

7. The method of claim 6, wherein The calibration of the upper radio frequency reference index to the second upper radio frequency index according to the comparison result further comprises: determining to perform detection of a second plasma density change rate according to the comparison result, the second plasma density change rate being a plasma density change rate in a first time T1 in the upper radio frequency nozzle region; determining a second compensation power and a second compensation frequency according to the second plasma density change rate; calibrating the upper radio frequency reference power to the second upper radio frequency power according to the second compensation power; and calibrating the upper radio frequency reference frequency to the second upper radio frequency frequency according to the second compensation frequency. ​ According to the second upper radio frequency index, the lower radio frequency reference index is calibrated to a second lower radio frequency index, further comprising: according to the second upper radio frequency power and the reference phase-locked angle, the lower radio frequency reference power is calibrated to a second lower radio frequency power; according to the second upper radio frequency frequency and the reference frequency adjustment factor, the lower radio frequency reference frequency is calibrated to a second lower radio frequency frequency; the reference frequency adjustment factor is obtained according to the conductivity and ionization rate of the reference plasma, the lower radio frequency reference frequency and the upper radio frequency reference frequency at the reference state; After the lower radio frequency reference index is calibrated to the second lower radio frequency index according to the second upper radio frequency index, further comprising: according to the second upper radio frequency power and the second upper radio frequency frequency, the radio frequency output of the upper radio frequency power supply is carried out; according to the second lower radio frequency power and the second lower radio frequency frequency, the radio frequency output of the lower radio frequency power supply is carried out.

8. The method of claim 7, wherein, According to the second plasma density change rate, the second compensation power and the second compensation frequency are determined, further comprising: The second reference plasma density change rate is obtained, which is the reference plasma density change rate of the upper radio frequency nozzle region within the first time T1; According to the second reference plasma density change rate and the second reference plasma density change rate, the second difference change rate is obtained, which is the absolute value of the difference between the second reference plasma density change rate and the second reference plasma density change rate; The size of the second difference change rate and the second threshold value is compared; If the second difference change rate is greater than the second threshold value, the second power compensation factor and the second frequency compensation factor are obtained according to the second difference change rate and the second threshold value; the second compensation power is obtained according to the second power compensation factor and the upper radio frequency reference power; the second compensation frequency is obtained according to the second frequency compensation factor and the upper radio frequency reference frequency; If the second difference change rate is less than the second threshold value, it is determined that the second compensation power and the second compensation frequency are both 0.

9. A radio frequency power supply output power calibration device for implementing the calibration method according to any one of claims 1 to 8, characterized in that, Comprising: The first residual index acquisition unit is used for acquiring the first residual index, the first residual index is calculated according to the first etching rate and the first plasma density change rate, and the first etching rate and the first plasma density change rate are acquired within the first time T1 in the semiconductor etching area, wherein the first residual index is positively correlated with the first plasma density change rate and inversely correlated with the first etching rate; The reference etching stability index acquisition unit is used for acquiring the reference etching stability index, the reference etching stability index is calculated according to the reference etching rate and the reference plasma density change rate, and the reference etching rate and the reference plasma density change rate are acquired within the first time T1 in the semiconductor etching area; The first comparison index determination unit is used for obtaining the first comparison index according to the first residual index and the reference etching stability index, and the first comparison index is the first residual index divided by the reference etching stability index; The comparison unit is used for comparing the size of the first comparison index and the first threshold value to obtain a comparison result. The execution residue calibration unit is configured to execute a residue calibration strategy if the comparison result satisfies a first comparison range, and the residue calibration strategy comprises: calibrating a first down radio frequency index first and then calibrating a first up radio frequency index according to the comparison result, wherein the first down radio frequency index and the first up radio frequency index both include radio frequency power output; The uniform calibration unit is configured to execute a uniform calibration strategy if the comparison result satisfies a second comparison range, and the uniform calibration strategy comprises: calibrating a second up radio frequency index first and then calibrating a second down radio frequency index according to the comparison result, wherein the second down radio frequency index and the second up radio frequency index both include radio frequency power output.

10. A semiconductor process method, characterized by, The semiconductor process method includes a semiconductor etching process method, and the semiconductor etching process method includes the radio frequency power output calibration method according to any one of claims 1-8.

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