High-side intelligent electronic switch, integrated circuit chip, chip product and electromechanical equipment

Abstract

The invention provides a high-side intelligent electronic switch, which comprises a power supply end, a power supply grounding end, a load output end and a switch control module, and is characterized in that the power supply end is used for being connected with a positive electrode of a power supply, the power supply grounding end is used for being connected with a negative electrode of the power supply, and the load output end is used for being connected with a load; the first end of the power switch is connected with the power supply end, the second end of the power switch is connected with the load output end, the control end of the power switch is connected with the switch control module, and the switch control module is used for controlling the power switch to be turned on or turned off; and the first end of the one-way conduction element is connected with the power supply end of the power supply, the second end of the one-way conduction element is connected with a node associated with parasitic current, and when backward flowing current from the load output end to the power supply end of the power supply exists on the power switch, the one-way conduction element is reversely cut off, so that the power switch can be turned on and turned on. The embodiment of the invention also provides an integrated circuit chip, a chip product and electromechanical equipment.

Description

Technical Field

[0001] The present application relates to the field of intelligent semiconductor switches, and in particular to a high-side intelligent electronic switch, an integrated circuit chip, a chip product and an electromechanical device. Background Art

[0002] The high-side smart electronic switch is usually used to couple the load with the battery, and is an electronic component that controls the on and off of the load line. The high-side smart electronic switch also has one or more diagnostic capabilities and protection features, such as protection against over-temperature, overload, over-current and short-circuit events. For example, the smart electronic switch has a power switch, and in the event of over-temperature, overload, over-current or short-circuit events, the power switch is disconnected, so that the path between the battery and the load is disconnected. Smart electronic switches are widely used in automotive electronics, industrial automation, medical equipment and other fields.

[0003] The high-side intelligent electronic switch includes a power supply end, a load output end, a power switch, and a switch control module. The first end of the power switch is connected to the positive electrode of the power supply via the power supply end, the second end of the power switch is connected to one end of the load via the load output end, and the other end of the load is connected to the negative electrode of the power supply. The switch control module is used to control whether the power switch is turned on. In this circuit structure, when there is a reverse current from the load output end to the power supply end, the voltage at the load output end will be greater than the voltage at the power supply end, and the parasitic transistor in the switch control module will become turned on. When the power switch needs to be turned on for various reasons, for example, one of the reasons is to reduce the loss of the power switch, it may be impossible to control the power switch to be turned on, that is, whether the power switch is turned on is uncontrolled. Summary of the invention

[0004] The technical problem to be solved by the embodiments of the present application is to provide a high-side intelligent electronic switch, an integrated circuit chip, a chip product and an electromechanical device in view of the deficiencies of the prior art. Even when a reverse current occurs, the power switch can be stably turned on and turned on as required.

[0005] In order to solve the above technical problems, a first aspect of an embodiment of the present application provides a high-side intelligent electronic switch, including:

[0006] A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load;

[0007] A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off;

[0008] A unidirectional conducting element, a first end of which is connected to a power supply end, and a second end of which is connected to a node associated with a parasitic current. When there is a reverse current from a load output end to a power supply end on a power switch, the unidirectional conducting element is reversely cut off so that the power switch can be turned on.

[0009] Optionally, the unidirectional conducting element includes a diode.

[0010] Optionally, the high-side intelligent electronic switch further includes a current limiting element, a first end of the current limiting element is connected to the power supply end, and a second end of the current limiting element is connected to a node associated with the parasitic current.

[0011] Optionally, the switch control module includes a conduction switch, a shutdown switch, a pull-up current source, a pull-down current source and a logic control unit, wherein the conduction switch and the pull-up current source are connected in series to form a first branch, one end of the first branch is connected to the boost unit, and the second end of the first branch is connected to the control end of the power switch, the shutdown switch and the pull-down current source are connected in series to form a second branch, the first end of the second branch is connected to the control end of the power switch, the second end of the second branch is connected to the load output end, and the control end of the conduction switch and the control end of the shutdown switch are both intercepted by the logic control unit;

[0012] The node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate; or,

[0013] The node associated with the parasitic current includes an n-type substrate, and the on-switch and the off-switch are located in the n-type substrate.

[0014] Optionally, when there is a backflow current from the load output end to the power supply end on the power switch, and the logic control unit controls the on switch to turn on and controls the off switch to turn off, the current flowing through the current limiting element is less than the output current of the pull-up current source.

[0015] This embodiment is provided with a unidirectional conduction element. When there is a backflow current from the load output end to the power supply end, the voltage at the load output end will be greater than the voltage at the power supply end, and the unidirectional conduction element will be cut off, so that the parasitic transistor will not be continuously turned on, and the parasitic current path between the control end of the power switch and the power supply end is disconnected, so that when the power switch needs to be turned on when there is a backflow current, the voltage at the control end of the power switch will not be pulled down due to the presence of the parasitic transistor, so the power switch can be reliably controlled to turn on. Moreover, when there is no backflow current, the unidirectional conduction element will be turned on, and the node associated with the parasitic current will remain connected to the power supply end, so as not to affect the normal use of the switch control module.

[0016] A second aspect of an embodiment of the present application provides a high-side intelligent electronic switch, including:

[0017] A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load;

[0018] A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off;

[0019] A switch control module, comprising a conduction switch, a shutdown switch, a pull-up current source, a pull-down current source and a logic control unit, wherein the conduction switch and the pull-up current source are connected in series to form a first branch, one end of the first branch is connected to a boost unit, and a second end of the first branch is connected to a control end of a power switch, the shutdown switch and the pull-down current source are connected in series to form a second branch, a first end of the second branch is connected to the control end of the power switch, a second end of the second branch is connected to a load output end, and the control end of the conduction switch and the control end of the shutdown switch are both connected to the logic control unit;

[0020] A current limiting element, a first end of which is connected to a power supply end, and a second end of which is connected to a node associated with a parasitic current. When there is a reverse current from a load output end to a power supply end on a power switch, and a logic control unit controls the on-switch to turn on and controls the off-switch to turn off, the pull-down capability of the current limiting element is less than the pull-up capability of the pull-up current source.

[0021] Optionally, the node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate; or,

[0022] The node associated with the parasitic current includes an n-type substrate, and the on-switch and the off-switch are located in the n-type substrate.

[0023] Optionally, the current limiting element is a second current limiting resistor, and the sum of the product of the current output by the pull-up current source and the resistance value of the second current limiting resistor and the turn-on voltage of the parasitic transistor enables the power switch to be fully turned on; or,

[0024] The current limiting element is a second current limiting resistor, and the resistance range of the second current limiting resistor is 200kΩ-5MΩ.

[0025] This embodiment is provided with a current limiting element, and the pull-down capability of the current limiting element is smaller than the pull-up capability of the pull-up current source. When there is a reverse current from the load output end to the power supply end, the voltage at the load output end will be greater than the voltage at the power supply end, and the parasitic transistor will continue to be turned on. When the power switch needs to be turned on when there is a reverse current, the current limiting element limits the current, and part of the current output by the pull-up current source is output to the power supply end via the parasitic transistor and the current limiting element, and the other part of the current output by the pull-up current source is output to the control end of the power switch, so that the power switch can be turned on stably. Moreover, the current limiting element can pull up the voltage of the node associated with the parasitic current to the voltage of the power supply end, and no leakage current will occur.

[0026] A third aspect of an embodiment of the present application provides an integrated circuit chip, comprising the above-mentioned high-side intelligent electronic switch, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

[0027] Optionally, the power switch is a MOS tube, and three ends of the MOS tube of the intelligent electronic switch are located in the same plane.

[0028] A fourth aspect of the embodiments of the present application provides a chip product, including the above-mentioned high-side intelligent electronic switch, wherein the components of the high-side intelligent electronic switch except the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip;

[0029] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, the load output end is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

[0030] Optionally, three ends of the MOS tube of the first integrated circuit chip are located in the same plane.

[0031] A fifth aspect of the embodiments of the present application provides an electromechanical device, including the above-mentioned high-side intelligent electronic switch or the above-mentioned integrated circuit chip or the above-mentioned chip product;

[0032] It also includes a power supply, a load and a microprocessor, wherein the positive pole of the power supply is connected to the power supply terminal, the negative pole of the power supply is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal, and the microprocessor is connected to the intelligent electronic switch.

[0033] Optionally, the electromechanical device includes a car. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 It is a circuit module diagram of an electromechanical device according to the first embodiment of the present application;

[0036] Figure 2a is a circuit module diagram of a high-side intelligent electronic switch of the related art;

[0037] Figure 2b is a partial film layer cross-sectional view of a high-side smart electronic switch of the related art;

[0038] Figure 3a is a circuit module diagram of a high-side intelligent electronic switch of the first embodiment of the present application;

[0039] Figure 3b is a partial film layer cross-sectional view of the high-side intelligent electronic switch of the first embodiment of the present application;

[0040] Figure 4 This is a partial film layer cross-sectional view of a first integrated circuit chip according to another embodiment of the present application.

[0041] Figure 5 is a circuit module diagram of a high-side intelligent electronic switch of the second embodiment of the present application;

[0042] Figure 6 It is a circuit module diagram of a high-side intelligent electronic switch according to the third embodiment of the present application. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0044] The terms "including" and "having" and any variations thereof appearing in the specification, claims and drawings of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or modules is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units that are inherent to these processes, methods, products or devices. In addition, the terms "first", "second" and "third" are used to distinguish different objects, rather than to describe a specific order. The connection of this application includes direct connection and indirect connection. Indirect connection means that other electronic components, pins, etc. may exist between the two connected components. The XX pin mentioned in this application may be an actual pin, or it may not be an actual pin, for example, it is only a pin of a component or a pin of a wire. The three situations mentioned and / or included in this application, such as A and / or B, include the three situations of A, B, A and B.

[0045] First embodiment

[0046] The present application embodiment provides an electromechanical device, such as an automobile, medical equipment, industrial automation equipment, aerospace equipment, etc. Figure 1 The electromechanical device includes a power supply 110, a load 120, a microprocessor 300 and a high-side intelligent electronic switch 200. The power supply 110 is generally a battery, which is generally a storage battery. The storage battery provides voltages such as 12V, 24V, 36V, 48V, 60V, etc., and can also be other types of batteries or power supplies, such as AC / DC (alternating current / direct current) converters, DC / DC (direct current / direct current) converters, etc. The load 120 includes at least one of a resistive load, an inductive load and a capacitive load. The resistive load is, for example, a seat adjustment device, an auxiliary heating device, a window heating device, a light emitting diode (LED), a rear lighting or other resistive loads. The inductive load is, for example, a pump, an actuator, a motor, an anti-lock braking system (ABS), an electronic braking system (EBS), a fan or other systems including an inductive load for one or more wiper systems. The capacitive load is, for example, a lighting element, such as a xenon arc lamp, etc. In the figure, the load 120 is only illustrated by one element. The load 120 is usually a more complex load, such as a module or subsystem with a large number of components. The microprocessor 300 is connected to the intelligent electronic switch 200 to control the high-side intelligent electronic switch 200. At the same time, the high-side intelligent electronic switch 200 feeds back its state and related parameter information, such as related parameter information of diagnosis, current parameter information, voltage parameter information, etc., to the microprocessor 300 for processing.

[0047] In this embodiment, the high-side intelligent electronic switch 200 includes a power supply terminal VCC, a power ground terminal GND, and a load output terminal OUT, wherein the power supply terminal VCC is connected to the positive electrode of the power supply 110, the power ground terminal GND is connected to the negative electrode of the power supply 110, the load output terminal OUT is connected to one end of the load 120, and the other end of the load 120 is connected to the negative electrode of the power supply 110. In addition, in other embodiments of the present application, a reverse connection prevention diode and a first current limiting resistor connected in parallel may be provided between the power ground terminal GND and the negative electrode of the power supply 110.

[0048] In this embodiment, the high-side intelligent electronic switch 200 further includes a power switch M1 and a switch control module 220. One end of the power switch M1 is connected in series with the load 120 via the load output terminal OUT, and the other end is connected to the power supply terminal VCC. The control end is connected to the switch control module 220, and the switch control module 220 is used to control whether the power switch M1 is turned on. In this embodiment, the power switch M1 is an NMOS tube, a PMOS tube, a junction FET or an IGBT, etc. The NMOS tube is used as an example for illustration in the figure. The power switch M1 can be implemented as a silicon device, or can be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs) or gallium nitride (GaN). In this embodiment, the power switch M1 is connected as a high-side switch, which is a switch connected between the power supply terminal VCC and the load 120.

[0049] Please refer to Figure 1 , Figure 2a and Figure 2b In the related art, the switch control module 220 includes a turn-on switch M2, a turn-off switch M3, a pull-up current source 224, a pull-down current source 225 and a logic control unit 222. The first end of the turn-on switch M2 is connected to the boost unit 221 via the pull-up current source 224, the second end of the turn-on switch M2 is connected to the control end of the power switch M1, the control end of the turn-on switch M2 is connected to the logic control unit 222, the positions of the turn-on switch M2 and the pull-up current source 224 can also be interchanged, the first end of the turn-off switch M3 is connected to the control end of the power switch M1, the second end of the turn-off switch M3 is connected to the load output end OUT via the pull-down current source 225, the control end of the turn-off switch M3 is connected to the logic control unit 222, the positions of the turn-off switch M3 and the pull-down current source 225 can also be interchanged, and the turn-on switch M2 and the turn-off switch M3 constitute a so-called totem pole drive circuit. Generally speaking, the on switch M2 is a PMOS tube, the off switch M3 is an NMOS tube, the boost unit 221 is connected to the power supply terminal VCC, the boost unit 221 is a charge pump or other boost element, and the output voltage of the boost unit 221 is greater than the voltage of the power supply terminal VCC.

[0050] In the above structure, when the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC due to some reasons, such as the reverse connection of the power supply 110, the effect of the inductance when the power switch M1 is turned off, etc., due to the presence of the parasitic diode in the power switch M1, a backflow current will appear even when the power switch M1 is turned off. When the backflow current appears, in some cases, it is hoped that the power switch M1 is turned on and turned on, for example, to reduce the heat caused by the flow of the backflow current in the parasitic diode in the power switch M1, so as to improve the reliability of the high-side intelligent electronic switch 200. However, since there is a parasitic transistor 223 (indicated by a dotted line in the figure) in the turn-off switch M3, when the backflow current appears, the parasitic transistor 223 will be turned on, which may result in the inability to effectively turn on the power switch M1.

[0051] For details, please refer to Figure 2a and Figure 2b , Figure 2b The cross-sectional schematic diagram of the related art on-switch M2, off-switch M3 and power switch M1 is illustrated, the intelligent electronic switch 200 includes a p-type substrate 411, a first n-type buried layer 412 (NBL) is formed on the p-type substrate 411, the on-switch M2 and the off-switch M3, that is, the PMOS tube and the NMOS tube in the figure are formed in the first n-type buried layer 412, specifically, a deep p-well 413 is formed in the first n-type buried layer 412, and then a first n-well 414 and a first p-well 415 are formed in the deep p-well 413, and a first n+ doped region, a first p+ doped region, and a first second p+ doped region are formed in the first n-well 414. Region, a second n+ doped region, a second n+ doped region, and a second p+ doped region are formed in the first p-well 415, wherein the first p+ doped region (source) is coupled to the boost unit 221, the first second p+ doped region (drain) is connected to the control end of the power switch M1, the first n-well 414 is connected to the boost unit 221 via the first n+ doped region, the second n+ doped region (source) is connected to the load output end OUT, the second second n+ doped region (drain) is connected to the control end of the power switch M1, the second p+ doped region is connected to the load output end OUT, and the first p-well 415 is connected to the load output end OUT via the second p+ doped region. In the figure, a PMOS tube is formed in the first n-well 414, an NMOS tube is formed in the first p-well 415, the first n-type buried layer 412 is connected to the power supply end VCC, and the p-type substrate 411 is connected to the power ground end GND. Figure 2bIn the structure, the NMOS tube has a parasitic transistor 223 (indicated by a dotted line in the figure) formed by the second n+ doped region, the first p-well 415, the deep p-well 413, and the first n-type buried layer 412. The parasitic transistor 223 is an npn-type transistor. The base of the parasitic transistor 223 is connected to the load output terminal OUT, the emitter of the parasitic transistor 223 is connected to the power supply terminal VCC, and the collector of the parasitic transistor 223 is connected to the control terminal of the power switch M1. When reverse current occurs, the voltage at the load output terminal OUT will be greater than the voltage at the power supply terminal VCC, causing the parasitic transistor 223 to be turned on. In this case, when the power switch M1 needs to be turned on, the logic control unit 222 will control the on-switch M2 to be turned on and the off-switch M3 to be turned off. Since the parasitic transistor 223 is turned on, the parasitic transistor 223 will pull down the voltage at the control terminal of the power switch M1, thereby causing the power switch M1 to be unable to be turned on, which is undesirable.

[0052] In order to solve the above problems, in this embodiment, please refer to Figure 1 and Figure 3a , Figure 3b , the switch control module 220 includes a unidirectional conductive element 230, the second end of the unidirectional conductive element 230 is connected to a node associated with the parasitic current, and the first end of the unidirectional conductive element 230 is connected to the power supply terminal VCC. In this embodiment, the unidirectional conductive element 230 is a diode, the first end of the unidirectional conductive element 230 is the anode of the diode, and the second end is the cathode of the diode. In addition, in other embodiments of the present application, the function of the diode can also be realized by a MOS tube or a triode, which is a conventional technology in the art and will not be repeated here.

[0053] In this embodiment, the parasitic current refers to the current from the control terminal of the power switch M1 to the power supply terminal VCC formed by the conduction of the parasitic transistor 223. The node associated with the parasitic current is the emitter of the parasitic transistor 223, so that when the unidirectional conductive element 230 is reverse biased (cut off), the path between the emitter of the parasitic transistor 223 and the power supply terminal VCC is disconnected. When the voltage of the power supply terminal VCC is greater than the voltage of the load output terminal OUT, the emitter of the parasitic transistor 223 is connected to the power supply terminal VCC through the unidirectional conductive element 230. In this embodiment, the emitter of the parasitic transistor 223 is the first n-type buried layer 412, and the node associated with the parasitic current is the first n-type buried layer 412 itself or its end.

[0054] In the present embodiment, when reverse current occurs, the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC. At this time, the parasitic transistor 223 may be turned on briefly, the unidirectional conductive element 230 will be reverse biased and cut off, and the node associated with the parasitic current will float. When the power switch M1 needs to be turned on (originally disconnected and cut off), the logic control unit 222 controls the on-switch M2 to be turned on and the off-switch M3 to be turned off. At this time, the parasitic transistor 223 may still be turned on briefly, but as the node voltage associated with the parasitic current is pulled up (the unidirectional conductive element is reverse biased and cut off), the parasitic transistor 223 will be turned off and remain turned off. Thereafter, the voltage at the control end of the power switch M1 can steadily rise to realize turning on the power switch M1.

[0055] In this embodiment, a unidirectional conduction element 230 is provided. When there is a reverse current from the load output terminal OUT to the power supply terminal VCC, the voltage of the load output terminal OUT will be greater than the voltage of the power supply terminal VCC, and the unidirectional conduction element 230 will be cut off, so that the parasitic transistor 223 will not be continuously turned on, and the parasitic current path between the control terminal of the power switch M1 and the power supply terminal VCC is disconnected, so that when the power switch M1 needs to be turned on when there is a reverse current, the voltage of the control terminal of the power switch M1 will not be pulled down due to the presence of the parasitic transistor 223, so that the power switch M1 can be reliably controlled to turn on. Moreover, when there is no reverse current, the unidirectional conduction element 230 will be turned on, and the node associated with the parasitic current will remain connected to the power supply terminal VCC, so as not to affect the normal use of the switch control module 220.

[0056] Please continue to refer to Figure 3a and Figure 3b In this embodiment, the intelligent electronic switch 200 is manufactured by a planar BCD (Bipolar-CMOS-DMOS) process. At this time, the three ends of the power switch M1 and other MOS tubes are located in the same plane. The three ends of the MOS tube refer to the source, drain and control end of the MOS tube. Specifically, a second n-type buried layer 416 (NBL) is also formed on the p-type substrate 411, an N-doped layer 417 and a P-doped layer 418 are formed in the second n-type buried layer 416, a third n+ doped region (drain) is formed in the N-doped layer 417, a third n+ doped region (source) and a third p+ doped region are formed in the P-doped layer 418, and then a control terminal is formed thereon, wherein the third n+ doped region (source) is connected to the load output terminal OUT, the third n+ doped region (drain) is connected to the power supply terminal VCC, the third p+ doped region is connected to the load output terminal OUT, and the second n-type buried layer 416 is connected to the power supply terminal VCC. The power switch M1 here does not draw all the film layers, and is a simplified model. The formation of the power switch M1 is a technology in this field and will not be repeated here.

[0057] In this embodiment, the unidirectional conductive element 230 is a diode, which is also located in the first n-type buried layer 412. Specifically, a fourth p-well 419 is formed in the first n-type buried layer 412, wherein the fourth p+ doped region (anode) is coupled to the power supply terminal VCC, and the fourth p-well 419 forms a diode with the first n-type buried layer 412. In this embodiment, the first n-type buried layer 412 and the second n-type buried layer 416 have an electrical isolation function.

[0058] The embodiment of the present application further provides an integrated circuit chip, the integrated circuit chip includes the above-mentioned high-side intelligent electronic switch 200, that is, the above-mentioned intelligent electronic switch 200 is made on the same semiconductor substrate. Among them, the power supply terminal VCC is a power supply pin, the power ground terminal GND is a power ground pin, and the load output terminal OUT is a load output pin.

[0059] Other embodiments of the present application also provide a chip product, which includes the above-mentioned high-side intelligent electronic switch 200, wherein the components of the intelligent electronic switch 200 except the power switch M1 are located on the first integrated circuit chip, and the power switch M1 is located on the second integrated circuit chip, that is, the first integrated circuit chip is made on one semiconductor substrate, and the second integrated circuit chip is made on another semiconductor substrate. Among them, the power supply terminal VCC is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. The first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the power supply pin and the load output pin, that is, the power supply pin is present on both the first integrated circuit chip and the second integrated circuit chip. Other pins can be added to the first integrated circuit chip and the second integrated circuit chip as needed. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product. The film layer structure of the first integrated circuit chip here is generally referred to Figure 4The first integrated circuit chip includes an n-type substrate 421, in which a turn-on switch M2 and a turn-off switch M3, namely a PMOS tube and an NMOS tube in the figure, are formed. Specifically, a fifth p-well 425 is formed in the n-type substrate 421, and a fifth first n+ doping region, a fifth second n+ doping region, and a fifth p+ doping region are formed in the fifth p-well 425, wherein the fifth first n+ doping region (source) is connected to the load output terminal OUT, the fifth second n+ doping region (drain) is connected to the control terminal of the power switch M1, the fifth p+ doping region is connected to the load output terminal OUT, and the fifth p-well 425 is connected to the load output terminal OUT via the fifth p+ doping region. Furthermore, a sixth n-well 424 is formed in the fifth p-well 425, and a sixth n+ doping region, a sixth first p+ doping region, and a sixth second p+ doping region are formed in the sixth n-well 424, wherein the sixth first p+ doping region (source) is coupled to the boost unit 221, the sixth second p+ doping region (drain) is connected to the control end of the power switch M1, and the sixth n-well 424 is connected to the boost unit 221 via the sixth n+ doping region. Furthermore, a fourth p-well 419 is formed in the n-type substrate 421, and the fourth p-well 419 forms a diode with the n-type substrate 421. Here, the power switch in the second integrated circuit chip can be a VDMOS (Vertical Double-diffused Metal-Oxide-Semiconductor), or an LDMOS (Lateral Double-diffused MOSFET), etc., which is not limited here. Here, by separately setting up two chips, the n-type substrate 421 of the first integrated circuit chip can be connected to the power supply pin as needed, or not connected to the power supply pin, and such processing will not affect the second integrated circuit chip.

[0060] In addition, in other embodiments of the present application, the intelligent electronic switch 200, integrated circuit chip, and chip product of the present embodiment are not limited to use in automotive electronics, but can also be used in industrial automation, aerospace and other fields.

[0061] In this embodiment, generally speaking, under normal circumstances, the voltage of the power supply terminal VCC is greater than the voltage of the load output terminal OUT. Since there is a unidirectional conductive element 230 composed of a diode between the two, the voltage drop between the anode and the cathode of the diode is about 0.7V, which will cause the voltage of the first n-type buried layer 412 to be about 0.7V lower than the voltage of the power supply terminal VCC, and a weak leakage current may occur. In order to solve this problem, the present application provides a second embodiment.

[0062] Second embodiment

[0063] See also Figure 5 , Figure 5 1 is a circuit module diagram of a high-side intelligent electronic switch 200 according to a second embodiment of the present application. This embodiment is similar to the first embodiment, so the parts not described in this embodiment may refer to the first embodiment. The main difference between this embodiment and the first embodiment is that a current limiting element is added.

[0064] Please refer to Figure 1 and Figure 5 In this embodiment, the switch control module 220 further includes a current limiting element, the second end of the current limiting element is connected to a node associated with the parasitic current, and the first end of the current limiting element is connected to the power supply terminal VCC, that is, the current limiting element is connected in parallel with the unidirectional conducting element 230. In this embodiment, the current limiting element is the second current limiting resistor 240. Of course, in other embodiments of the present application, the current limiting element may also be other current limiting elements known to those skilled in the art.

[0065] In this embodiment, when there is no backflow current, the voltage of the power supply terminal VCC is greater than the voltage of the load output terminal OUT. Initially, the unidirectional conducting element 230 and the current limiting element connect the node associated with the parasitic current to the power supply terminal VCC. When the voltage difference between the node associated with the parasitic current and the power supply terminal VCC is less than 0.7V, the unidirectional conducting element 230 is cut off, but the current limiting element will continue to conduct the two ends and continue to pull up the node associated with the parasitic current, and finally make the voltage of the node associated with the parasitic current reach the voltage of the power supply terminal VCC, that is, the voltage of the first n-type buried layer 412 is the same as the voltage of the power supply terminal VCC. By setting it in this way, weak leakage current can be avoided. When reverse current occurs, the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC. At this time, the unidirectional conductive element 230 is reverse biased and cut off. At the same time, the parasitic transistor 223 is turned on. When the power switch M1 needs to be turned on, the logic control unit 222 controls the on-switch M2 to turn on and the off-switch M3 to turn off. At this time, the parasitic transistor 223 is still turned on. The control end of the power switch M1 reaches the power supply terminal VCC via the parasitic transistor 223 and the current limiting element, that is, a path is formed. In order to weaken the pull-down of the control end voltage of the power switch M1 by the path, in this embodiment, the pull-down capability of the current limiting element is less than the pull-up capability of the pull-up current source 224, that is, when the parasitic transistor 223 is turned on, the current flowing through the current limiting element is less than the current of the pull-up current source 224. Through such processing, even if the parasitic transistor 223 is still turned on, the power switch M1 can still be turned on as needed, and the leakage current can also be reduced.

[0066] In order to make the pull-down capability of the current limiting element smaller than the pull-up capability of the pull-up current source 224 when the parasitic transistor 223 is turned on, in the present embodiment, the resistance range of the second current limiting resistor 240 is 200kΩ-5MΩ, for example, 200kΩ, 500kΩ, 700kΩ, 900kΩ, 1MΩ, 3MΩ, 5MΩ, etc. By adding a resistor with a large resistance value, it can be achieved that when the power switch M1 needs to be turned on after the current backflow, the current flowing through the parasitic transistor 223 is very small, part of the current of the pull-up current source 224 flows to the power supply terminal VCC via the parasitic transistor 223 and the second current limiting resistor 240, and the remaining part of the current of the pull-up current source 224 is output to the control terminal of the power switch M1, so that the power switch M1 can be turned on.

[0067] In order to ensure that the power switch M1 can be fully turned on, in this embodiment, the product of the current output by the pull-up current source 224 and the resistance value of the second current limiting resistor 240 and the sum of the product and the turn-on voltage of the parasitic transistor 223 can make the power switch M1 fully turned on. The voltage is greater than the threshold voltage of the power switch M1, thereby ensuring that the power switch can be fully turned on.

[0068] Third embodiment

[0069] See also Figure 6 , Figure 6 1 is a circuit module diagram of a high-side intelligent electronic switch 200 of the third embodiment of the present application. This embodiment is similar to the second embodiment, so the parts not described in this embodiment can refer to the second embodiment. The main difference between this embodiment and the second embodiment is that a unidirectional conductive element is not required.

[0070] See also Figure 1 and Figure 6 The difference between this embodiment and the second embodiment is that the unidirectional conducting element 230 is not required, which can reduce the cost. It can also achieve that when the reverse current occurs, the power switch M1 can be reliably turned on when the power switch M1 needs to be turned on. For details, please refer to the second embodiment, which will not be repeated here.

[0071] In this embodiment, a current limiting element is provided, and the pull-down capability of the current limiting element is smaller than the pull-up capability of the pull-up current source 224. When there is a reverse current from the load output terminal OUT to the power supply terminal VCC, the voltage of the load output terminal OUT will be greater than the voltage of the power supply terminal VCC, and the parasitic transistor 223 will continue to be turned on. When the power switch M1 needs to be turned on when there is a reverse current, the current limiting element performs current limiting, and part of the current output by the pull-up current source 224 is output to the power supply terminal VCC via the parasitic transistor 223 and the current limiting element, and the other part of the current output by the pull-up current source 224 is output to the control terminal of the power switch M1, so that the power switch M1 can be turned on stably. In addition, the current limiting element can pull up the voltage of the node associated with the parasitic current to the voltage of the power supply terminal VCC, and no leakage current will occur.

[0072] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0073] It should be understood that the "plurality" mentioned in this article refers to two or more. Those skilled in the art will easily think of other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary technical means in the art that are not disclosed in the present application. The specification and examples are only regarded as exemplary, and the true scope and spirit of the present application are indicated by the following claims.

[0074] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0075] The above disclosure is only the preferred embodiment of the present application, which certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A high-side intelligent electronic switch, characterized in that: include: A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load; A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off; A unidirectional conducting element, a first end of which is connected to a power supply end, and a second end of which is connected to a node associated with a parasitic current. When there is a reverse current from a load output end to a power supply end on a power switch, the unidirectional conducting element is reversely cut off so that the power switch can be turned on.

2. The intelligent electronic switch according to claim 1, characterized in that: The unidirectional conductive element includes a diode.

3. The intelligent electronic switch according to claim 2, characterized in that: The high-side intelligent electronic switch further includes a current limiting element, a first end of which is connected to a power supply end, and a second end of which is connected to a node associated with a parasitic current.

4. The intelligent electronic switch according to claim 3, characterized in that: The switch control module includes a conducting switch, a shutoff switch, a pull-up current source, a pull-down current source and a logic control unit, wherein the conducting switch and the pull-up current source are connected in series to form a first branch, one end of the first branch is connected to the boost unit, and the second end of the first branch is connected to the control end of the power switch, the shutoff switch and the pull-down current source are connected in series to form a second branch, the first end of the second branch is connected to the control end of the power switch, the second end of the second branch is connected to the load output end, and the control end of the conducting switch and the control end of the shutoff switch are both connected to the logic control unit; The node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate; or, The node associated with the parasitic current includes an n-type substrate, and the on-switch and the off-switch are located in the n-type substrate.

5. The intelligent electronic switch according to claim 4, characterized in that: When there is a backflow current from the load output end to the power supply end on the power switch, and the logic control unit controls the on switch to turn on and controls the off switch to turn off, the current flowing through the current limiting element is less than the output current of the pull-up current source.

6. A high-side intelligent electronic switch, characterized in that: include: A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load; A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off; A switch control module, comprising a conduction switch, a shutdown switch, a pull-up current source, a pull-down current source and a logic control unit, wherein the conduction switch and the pull-up current source are connected in series to form a first branch, one end of the first branch is connected to a boost unit, and a second end of the first branch is connected to a control end of a power switch, the shutdown switch and the pull-down current source are connected in series to form a second branch, a first end of the second branch is connected to the control end of the power switch, a second end of the second branch is connected to a load output end, and the control end of the conduction switch and the control end of the shutdown switch are both connected to the logic control unit; A current limiting element, a first end of which is connected to a power supply end, and a second end of which is connected to a node associated with a parasitic current. When there is a reverse current from a load output end to a power supply end on a power switch, and a logic control unit controls the on-switch to turn on and controls the off-switch to turn off, the pull-down capability of the current limiting element is less than the pull-up capability of the pull-up current source.

7. The intelligent electronic switch according to claim 6, characterized in that: The node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate; or, The node associated with the parasitic current includes an n-type substrate, and the on-switch and the off-switch are located in the n-type substrate.

8. The intelligent electronic switch according to claim 6, characterized in that: The current limiting element is a second current limiting resistor, and the sum of the product of the current output by the pull-up current source and the resistance value of the second current limiting resistor and the turn-on voltage of the parasitic transistor enables the power switch to be fully turned on; or, The current limiting element is a second current limiting resistor, and the resistance range of the second current limiting resistor is 200kΩ-5MΩ.

9. An integrated circuit chip, characterized in that: It comprises a high-side intelligent electronic switch as described in any one of claims 1-8, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

10. The integrated circuit chip according to claim 9, characterized in that: The power switch is a MOS tube, and three ends of the MOS tube of the intelligent electronic switch are located in the same plane.

11. A chip product, characterized in that: The high-side intelligent electronic switch according to any one of claims 1 to 8, wherein the components of the high-side intelligent electronic switch except the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip; Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, the load output end is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

12. The chip product according to claim 11, characterized in that: The three ends of the MOS tube of the first integrated circuit chip are located in the same plane.

13. An electromechanical device, characterized in that: A high-side intelligent electronic switch according to any one of claims 1 to 8, or an integrated circuit chip according to claim 9 or 10, or a chip product according to claim 11 or 12; It also includes a power supply, a load and a microprocessor, wherein the positive pole of the power supply is connected to the power supply terminal, the negative pole of the power supply is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal, and the microprocessor is connected to the intelligent electronic switch.

14. The electromechanical device according to claim 13, characterized in that The electromechanical device includes an automobile.

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