Dielectric resonator and microwave device
By designing a dielectric resonator including a dielectric and a conductive housing and coupled with a coaxial resonator, the problem of microwave equipment size and performance requirements in 5G and large-scale MIMO systems is solved, and the volume reduction and performance improvement of the dielectric resonator is achieved.
Patent Information
- Application Number
- CN202280100301.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-09-21
- Publication Date
- 2025-05-02
AI Technical Summary
In base stations of 5G and large-scale MIMO systems, existing microwave devices are difficult to meet the requirements of smaller size and better performance, especially in terms of insertion loss and attenuation performance.
A dielectric resonator is designed, which includes a housing defining a cavity and a dielectric disposed within the cavity. The dielectric is in electrical contact with the surface of the shell, and by optimizing the side surface layout of the dielectric and the structure of the shell, the volume reduction and performance improvement of the dielectric resonator are achieved. The dielectric resonator is coupled with the coaxial resonator to form a hybrid dual-mode microwave device.
The dielectric resonator is reduced in size, simple structure, low manufacturing cost and reliable performance, and meets the high performance requirements of 5G and large-scale MIMO systems for microwave equipment, reduces insertion loss and improves the stability of frequency response.
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Figure CN119923759A_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present disclosure relate generally to the field of telecommunications, and in particular, to dielectric resonators and microwave devices. Background Art
[0002] With the development of wireless communication systems, microwave devices (such as radio frequency (RF) filters) have become a key part of base stations used in wireless communication systems. In base stations of 5G and massive multiple-input multiple-output (MIMO) systems, the requirements for microwave devices are getting higher and higher. On the one hand, microwave devices are required to be smaller in size to adapt to 5G and massive MIMO base station applications. On the other hand, in 5G and massive MIMO base stations, microwave devices are required to provide better performance. The performance of microwave devices will affect the sensitivity and power consumption of the entire system. Summary of the invention
[0003] In general, example embodiments of the present disclosure provide dielectric resonators and microwave devices.
[0004] In a first aspect, a dielectric resonator in a microwave device is provided. The dielectric resonator includes a housing defining a cavity and a dielectric body arranged in the cavity. At least the surface of the housing is conductive. The cavity includes a first top surface, a first bottom surface and at least four side surfaces. The dielectric body includes a second top surface, a second bottom surface and eight side surfaces. The second top surface is in conductive contact with the first top surface. The second bottom surface is in conductive contact with the first bottom surface. A first group of four side surfaces among the eight side surfaces are separated in parallel from the four side surfaces of the cavity. A second group of four side surfaces among the eight side surfaces face four lateral edges of the cavity.
[0005] In a second aspect, a microwave device is provided. The microwave device comprises at least one dielectric resonator as described in the first aspect. The microwave device further comprises at least two coaxial resonators. The at least one dielectric resonator and the at least two coaxial resonators are coupled to each other.
[0006] It is to be understood that the invention summary is not intended to identify the key or essential features of the embodiments of the present disclosure, nor is it intended to be used to limit the scope of the present disclosure. Other features of the present disclosure will become readily understandable through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Some example embodiments will now be described with reference to the accompanying drawings, in which:
[0008] Figure 1 illustrates a schematic structural view of a 5G massive MIMO active antenna unit (AAU) in which an example embodiment of the present disclosure may be implemented;
[0009] Figure 2A illustrates a perspective view of a dielectric resonator according to a first embodiment of the present disclosure;
[0010] FIG. 2B to FIG. 2D 2 respectively illustrate an exploded perspective view, a top view, and a side view of the dielectric resonator shown in FIG. 2 ;
[0011] Figure 3A The top view shows Figure 2A The electromagnetic field distribution diagram of the dielectric resonator in the first working mode shown in FIG.
[0012] Figure 3B Shown in side view Figure 2A The electric field distribution diagram of the dielectric resonator in the first working mode is shown in FIG.
[0013] Figure 3C The top view shows Figure 2A The electromagnetic field distribution diagram of the dielectric resonator in the second working mode shown in FIG.
[0014] Figure 3D Shown in side view Figure 2A The electric field distribution diagram of the dielectric resonator in the second working mode shown in FIG.
[0015] Figure 4 Illustration of a size marked Figure 2A A top view of the dielectric resonator shown in FIG.
[0016] Figure 5 Pictured Figure 2A The frequency variation curve of the working mode of the dielectric resonator shown in;
[0017] Figure 6 illustrates a schematic structural view of a dielectric resonator according to a second embodiment of the present disclosure;
[0018] Figure 7 illustrates a schematic structural view of a dielectric resonator according to a third embodiment of the present disclosure;
[0019] Fig. 8A A schematic structural view of a microwave device according to an embodiment of the present disclosure is illustrated;
[0020] Figure 8B Pictured Fig. 8A A topological view of a microwave device shown in FIG.
[0021] Fig.9A Pictured Fig. 8A An exploded perspective view of a microwave device shown in FIG.
[0022] Fig. 9B Pictured Fig. 8A A schematic structural view of a bottom housing of a microwave device shown in FIG.
[0023] Fig.10 Picture shows Fig. 8A A schematic structural view of a coupling structure in a microwave device shown in FIG.
[0024] Fig.11 Picture shows Fig. 8A The frequency response of the microwave device shown in; and
[0025] FIG. 12A to FIG. 12D A schematic structural view of a microwave device according to another embodiment of the present disclosure is illustrated.
[0026] Throughout the drawings, the same or similar reference numerals refer to the same or similar elements. DETAILED DESCRIPTION
[0027] The principle of the present disclosure is now described with reference to some example embodiments. It is to be understood that these embodiments are described only for the purpose of illustration, and help those skilled in the art to understand and implement the present disclosure, without implying any limitation to the scope of the present disclosure. The present disclosure described in this article can be implemented in various ways different from the ways described below.
[0028] In the following description and claims, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs.
[0029] References in this disclosure to "one embodiment," "some example embodiments," "example embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, but not every embodiment must include the particular feature, structure, or characteristic. Furthermore, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in conjunction with some example embodiments, it is considered to be within the common knowledge of those skilled in the art to implement such feature, structure, or characteristic in conjunction with other embodiments (whether or not explicitly described).
[0030] It should be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the exemplary embodiments, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. As used herein, the term "and / or" includes any one of one or more of the listed terms and all combinations thereof.
[0031] The terms used in this article are only for the purpose of describing specific embodiments and are not intended to limit the exemplary embodiments. As used in this article, the singular forms "a", "an" and "the" are also intended to include plural forms unless the context clearly indicates otherwise. It should also be understood that the terms "comprises", "comprising", "has", "having", "includes" and / or "includes" are used in this article to indicate the presence of the features, elements and / or components set forth, but do not exclude the presence or addition of one or more other features, elements, components and / or combinations thereof. It should be understood that the terms "parallel" and "perpendicular" as used in this article can refer to strict parallelism and strict perpendicularity, respectively, and can also refer to substantially parallelism and substantially perpendicularity within the margin of errors caused by manufacturing processes (e.g., within ± 0.5° or ± 1°). It should be understood by those skilled in the art that such errors do not result in a significant reduction in performance and therefore will not depart from the scope of this disclosure.
[0032] The term "housing" as used herein may refer to a structure that contains an object and at least partially covers and protects the object. The term "cavity" as used herein may refer to a hollow space that may be filled with air or a dielectric material. The term "resonant component" or "resonator" as used herein may refer to a structure that supports electromagnetic resonance.
[0033] Microwave devices (e.g., radio frequency (RF) filters) are key components in 5G and massive MIMO systems that can suppress harmonics and spurious signals and make signals clearer. Conventional air cavity filters require large filter sizes to provide good performance in terms of low insertion loss and high suppression. Conventional ceramic waveguide filters can provide decent RF performance for most 5G and massive MIMO systems with a fairly small size and thin thickness, but at the expense of poor insertion loss performance at far frequency bands and poor attenuation performance. Therefore, a resonator with simple structure, small size and reliable performance is needed. The principles and embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
[0034] First refer to Figure 1 , which illustrates a schematic structural view of a 5G massive MIMO AAU 1 in which an example embodiment of the present disclosure may be implemented. Figure 1As shown in , the AAU 1 may include at least three layers from bottom to top, namely, a motherboard 13 in the bottom layer, an antenna array 11 in the top layer, and a microwave device (e.g., filter) 12 in the middle layer. The motherboard 13 may include a printed circuit board that implements the transceiver / power amplifier / power supply functions. The antenna array 11 may include a feeding network in the printed circuit board assembly. The microwave device 12 may include one or more filters for connecting the motherboard 13 to the antenna array 11. The thickness of the microwave device 12 is quite critical to the overall AAU thickness, as is the weight.
[0035] To understand, Figure 1 The AAU in the figure is for illustration purposes only and does not imply any limitation. In addition to the AAU, the dielectric resonator and microwave device according to the embodiments of the present disclosure can be implemented in any other device or scenario that requires one or more dielectric resonators or one or more microwave devices.
[0036] Figure 2A A perspective view of dielectric resonator 20 according to the first embodiment of the present disclosure is illustrated. FIG. 2B to FIG. 2D 2 respectively illustrate an exploded perspective view, a top view, and a side view of dielectric resonator 20 shown in FIG. FIG. 2A to FIG. 2D As shown in , generally, the dielectric resonator 20 described in this article is a dual-mode resonator, which includes a shell 22 defining a cavity 23 and a dielectric body 21 installed in the cavity 23. The shell 22 is at least electrically conductive on the surface. As used herein, in some example embodiments, the dielectric body 21 may also be referred to as a dielectric puck 21. In some embodiments, the shell 22 may be made of various available metal materials (such as aluminum), and the scope of the present disclosure is not limited in this regard. In other embodiments, the shell 22 may be made of various non-metallic materials (such as plastic or ceramic materials) with a conductive coating.
[0037] Likewise, the dielectric body 21 can be made of various available dielectric materials. For example, in some embodiments, the dielectric body 12 can be made of a suitable dielectric material with low loss. For example, a typical material is a microwave ceramic material, such as BaTi4O9, Ba2Ti9O 20 Or (Zr, Sn)TiO4, etc. The microwave ceramic material has low loss and a dielectric constant in the range of 5 to 120. For dielectric resonators having the same structure and size, the higher the dielectric constant of the resonator body, the lower the resonant frequency. For example, for millimeter wave dielectric resonators, ceramics with lower dielectric constants can be used, while for dielectric resonators providing lower resonant frequencies (such as 600 MHz), ceramics with higher dielectric constants can be used. In other embodiments, the dielectric body 21 can be made of other materials, and the scope of the present disclosure is not limited in this respect.
[0038] like FIG. 2A to FIG. 2D As shown in , the cavity 23 of the housing 22 includes a first top surface 220, a first bottom surface 225, and four side surfaces 221 to 224. The dielectric body 21 includes a second top surface 210, a second bottom surface 219, and eight side surfaces 211 to 218. The second top surface 210 of the dielectric body 21 is in conductive contact with the first top surface 220 of the cavity 23, and the second bottom surface 219 of the dielectric body 21 is in conductive contact with the first bottom surface 225 of the cavity 23. The first group of four side surfaces 211 to 214 of the eight side surfaces of the dielectric body 21 are separated from the four side surfaces 221 to 224 of the cavity 23. The first group of four side surfaces 211 to 214 of the dielectric body 21 are substantially parallel to the four side surfaces 221 to 224 of the cavity 23, respectively. The second group of four side surfaces 215 to 218 of the eight side surfaces face the four lateral edges of the cavity 23. In this way, the volume of the dielectric resonator can be reduced so that it can be applied to 5G and massive MIMO base stations. In addition, such a dielectric resonator has a simple structure, low manufacturing cost and reliable performance. It should be understood that FIG. 2A to FIG. 2D The structure of dielectric resonator 20 in FIG. 2 is provided by way of example and does not imply any limitation. For example, cavity 23 may include additional side surfaces in addition to the four side surfaces 221 to 224 as shown.
[0039] In an embodiment, Figure 2B As shown in FIG. 1 , housing 22 may include a top cover 230 defining a first top surface 220 of cavity 23 and a bottom housing 240 defining a first bottom surface 225 and four side surfaces 221 to 224 of cavity 23. First top surface 220 and first bottom surface 225 of cavity 23 may be in a square shape or a rectangular shape. In other words, cavity 23 may be in a thickness direction (i.e., FIG. 2A to FIG. 2D In the example of the present disclosure, the cross section of cavity 23 may be illustrated as a square shape. Although this may be the case in some examples, it is not necessarily the case in all examples. In this way, the dielectric resonator has a simple structure and is easy to manufacture and assemble.
[0040] In some embodiments, the second top surface 210 and the second bottom surface 219 of the dielectric body 21 may be in an octagonal shape. In some embodiments, the first side surface 215 and the third side surface 217 of the second set of four side surfaces 215 to 218 of the dielectric body 21 may be opposite to each other and substantially parallel. Alternatively or additionally, the second side surface 216 and the fourth side surface 218 of the second set of four side surfaces 215 to 218 of the dielectric body 21 may be opposite to each other and substantially parallel. In this way, the dielectric resonator can support two independent operating modes with a simple structure.
[0041] In some embodiments, the first side surface 215 and the third side surface 217 of the dielectric body 21 may be arranged relative to a first diagonal plane of the cavity 23 based on the required field distribution of the first operating mode of the dielectric resonator 20, the first diagonal plane including two of the four lateral edges of the cavity 23. Alternatively or additionally, the second side surface 216 and the fourth side surface 218 of the dielectric body 21 may be arranged relative to a second diagonal plane of the cavity 23 based on the required field distribution of the second operating mode of the dielectric resonator 20, the second diagonal plane including the other two of the four lateral edges of the cavity 23. In this way, the electromagnetic field distribution of the dielectric resonator is more regular, making it easy to achieve a higher coupling strength and thus reduce the insertion loss.
[0042] In some embodiments, dielectric resonator 20 can be configured to support a first operating mode having a first resonant frequency and a second operating mode having a second resonant frequency. FIG. 3A to FIG. 3D , these figures illustrate Figure 2A 2 is a diagram showing the electromagnetic field distribution of the dielectric resonator 20 in two working modes.
[0043] Figure 3A The top view shows Figure 2A The electromagnetic field distribution diagram of the dielectric resonator 20 in the first working mode is shown in FIG. Figure 3B Shown in side view Figure 2A The electric field distribution diagram of the dielectric resonator 20 in the first working mode is shown in FIG. Figure 3C The top view shows Figure 2A The electromagnetic field distribution diagram of the dielectric resonator 20 in the second working mode is shown in FIG. Figure 3D Shown in side view Figure 2A The electric field distribution diagram of the dielectric resonator 20 in the second working mode is shown in FIG. The dielectric resonator 20 may have multiple resonance modes, and two resonance modes are selected as its working modes among these resonance modes. In the exemplary implementation, FIG. 3A to FIG. 3D From the perspective of FIG. 2 , the operating modes of dielectric resonator 20 may be two transverse magnetic (TM) modes, namely, TM21A mode and TM21B mode. There is no coupling between the two operating modes.
[0044] like Figure 3A and Figure 3B As shown in , the first side surface 215 and the third side surface 217 of the dielectric body 21 can be perpendicular to the first diagonal plane of the cavity 23, so that the peak electric field intensity and the peak magnetic field intensity of the TM21A mode are distributed along the first diagonal plane of the cavity 23, and the first diagonal plane includes the first lateral edge and the third lateral edge among the four lateral edges. In other words, the electromagnetic field distribution of the TM21A mode is along the +45° diagonal line of the cross section of the cavity 23. Figure 3B As shown in , the electric field of the TM21A mode in the dielectric 21 is guided from the top to the bottom near the first lateral edge, and is guided from the bottom to the top near the third lateral edge. Figure 3C and Figure 3D As shown in , the second side surface 216 and the fourth side surface 218 can be perpendicular to the second diagonal plane of the cavity 23, so that the peak electric field intensity and the peak magnetic field intensity of the TM21B mode are distributed along the second diagonal plane of the cavity 23, and the second diagonal plane includes the second lateral edge and the fourth lateral edge among the four lateral edges. In other words, the electromagnetic field distribution of the TM21B mode is along the -45° diagonal line of the cross section of the cavity 23. Figure 3D As shown in , the electric field of the TM21A mode in the dielectric 21 is guided from the top to the bottom near the second lateral edge, and is guided from the bottom to the top near the fourth lateral edge. FIG. 3A to FIG. 3D Such an electromagnetic field distribution as shown in is important for dual-mode filter topologies.
[0045] Figure 4 Illustration of a size marked Figure 2A 2 is a top view of the dielectric resonator 20 shown in FIG. By way of example only, the cross-section of the cavity 23 is a square shape, and the cross-section of the dielectric body 21 is an octagonal shape formed by truncating the four corners of the square shape. Figure 4 As shown in , the width of the cavity 23 in the lateral direction is a. The width of the dielectric 21 in the lateral direction is b. The widths of the first side surface 215 and the third side surface 217 of the dielectric 21 in the lateral direction are c1 and c2, respectively. The lateral direction refers to the direction perpendicular to the thickness direction of the dielectric resonator 20. The widths of the second side surface 216 and the fourth side surface 218 of the dielectric 21 in the lateral direction are d1 and d2, respectively. In some embodiments, at least one of the widths of the second group of four side surfaces 215 to 218 of the dielectric 21 (i.e., the maximum width among the widths c1, c2, d1, and d2) is smaller than the minimum width among the widths of the first group of four side surfaces 211 to 214. In this way, the distribution of the electromagnetic field along the two diagonals of the cavity cross section is achieved.
[0046] In some embodiments, the first resonant frequency of the first operating mode and the second resonant frequency of the second operating mode of dielectric resonator 20 can be independently tuned. Figure 5 , which illustrates Figure 2A The frequency variation curve of the working mode of the dielectric resonator 20 is shown in FIG. Figure 5 In the example embodiment of FIG. 1 , it is assumed that the size of cavity 23 (eg, Figure 4 The width a) and the size of the dielectric 21 (e.g., Figure 4By adjusting at least one of the widths c1 and c2 of the first side surface 215 and the third side surface 217 of the dielectric body 21, the first resonant frequency is tunable, while the second resonant frequency is substantially unchanged.
[0047] The widths c1 and c2 of the first side surface 215 and the third side surface 217 of the dielectric body 21 in the lateral direction may be the same. Alternatively or additionally, the widths d1 and d2 of the second side surface 216 and the fourth side surface 218 of the dielectric body 21 in the lateral direction may be the same. Such a symmetrical structure helps to reduce the complexity of manufacturing and assembling the dielectric resonator.
[0048] like Figure 5 As shown in , assuming c1=c2=c, by increasing the width c of the first side surface 215 and the third side surface 217, the first resonant frequency of the TM21A mode increases, while the second resonant frequency of the TM21B mode remains substantially unchanged. Similarly, by adjusting at least one of the widths d1 and d2 of the second side surface 216 and the fourth side surface 218 of the dielectric body 21, the second resonant frequency is tunable, while the first resonant frequency does not substantially change. In this way, the resonant frequency of each operating mode of the dual-mode dielectric resonator can be adjusted independently with little or no effect on the other operating mode. In some embodiments, if c1=c2=d1=d2, the first resonant frequency and the second resonant frequency of the TM21A mode and the TM21B mode can be the same.
[0049] Figure 6 FIG. 2 shows a schematic structural view of a dielectric resonator 20 according to a second embodiment of the present disclosure. Figure 6 The dielectric resonator 20 shown in FIG. Figure 2A The dielectric resonator 20 shown in FIG. 1 is similar in structure to the dielectric resonator 20 shown in FIG. The same reference numerals will be used to denote the same components, and their specific details will not be described again. The difference between the two dielectric resonators 20 is mainly in the width of the second set of side surfaces 215 to 218 of the dielectric body 21 in the lateral direction. Specifically, as Figure 6 As shown in , the widths c1 and c2 of the first and third side surfaces 215 and 217 of the dielectric body 21 in the lateral direction may be different. Alternatively or additionally, the widths d1 and d2 of the second and fourth side surfaces 216 and 218 of the dielectric body 21 in the lateral direction may be different.
[0050] Figure 7 FIG. 2 shows a schematic structural view of a dielectric resonator 20 according to a third embodiment of the present disclosure. Figure 7 The dielectric resonator 20 shown in FIG. Figure 2AThe dielectric resonator 20 shown in FIG. 1 is similar in structure to the dielectric resonator 20 shown in FIG. The same reference numerals will be used to represent the same components, and their specific details will not be described again. The difference between the two dielectric resonators 20 mainly lies in the hole 24. Specifically, as Figure 7 As shown in , the dielectric body 21 may be provided with a hole 24 substantially at the center of the dielectric body 21 extending from the second top surface 210 to the second bottom surface 219 of the dielectric body 21 in the thickness direction. FIG. 3A to FIG. 3D As shown in the electromagnetic field distribution in FIG. 2 , there is no electric field / less electric field at the center of the dielectric body 21, so the hole 24 can be designed in the center without substantially changing the electromagnetic field distribution. The dielectric body 21 can be fixed to the housing 22 using a fixing screw passing through the hole 24. In this way, the dielectric body is assembled in the dielectric resonator more stably and reliably.
[0051] References Figures 2A to 7 The dielectric resonator 20 described in accordance with various embodiments may be used in microwave devices such as radio frequency filters. 8A to 12D Some exemplary embodiments of microwave devices are described below.
[0052] Fig. 8A A schematic structural view of a microwave device 12 according to an embodiment of the present disclosure is illustrated. Fig. 8A The microwave device 12 shown in the figure is a linear microwave device including a dielectric resonator 20 as described above and two coaxial resonators 30. The dielectric resonator 20 and the two coaxial resonators 30 are coupled to each other. Therefore, as used herein, the microwave device 12 can also be referred to as a hybrid dual-mode microwave device. In some embodiments, the two coaxial resonators 30 are coupled to the dielectric resonator 20 at two opposite side surfaces of the dielectric resonator 20. In some embodiments, the microwave device 12 has an input port 81 and an output port 82. RF signals can be transmitted from one port to another port.
[0053] Figure 8B Picture shows Fig. 8A A topological view of the microwave device 12 is shown in FIG. Figure 8B As shown in FIG. 1 , the microwave device 12 has an input and an output, the first node corresponding to Fig. 8A The first coaxial resonator 30 shown in FIG. 1 , the second node and the third node correspond to Fig. 8A The two operating modes of the dielectric resonator 20 are shown in FIG. 1 , and the fourth node corresponds to Fig. 8A30. In this way, a hybrid dual-mode microwave device with good attenuation performance is provided. The reason is that one characteristic of a ceramic dual-mode resonator is that the frequency of the high mode is close to the passband, normally 1.5×f0 or 2×f0; but the high mode of an air cavity coaxial resonator with a capacitor is quite far away, reaching more than 3×f0 or even 5×f0, where f0 represents the center frequency of the passband.
[0054] Reference numerals C12, C13, C24 and C34 are used to indicate the coupling between the corresponding resonators. The coupling between the corresponding resonators can be achieved by a coupling window structure in the design of the microwave device. Figure 8B As shown in , there is no coupling between the two operating modes of dielectric resonator 20. The coupling topology of microwave device 12 is referred to as a parallel coupling structure.
[0055] Fig.9A Picture shows Fig. 8A An exploded perspective view of the microwave device 12 is shown in FIG. Fig. 9B Picture shows Fig. 8A Schematic structural view of the bottom housing 98 of the microwave device 12 is shown in FIG.
[0056] Fig.10 Picture shows Fig. 8A Schematic structural view of the coupling structure 83 in the microwave device 12 shown in FIG. FIG. 8A to FIG. 10 As shown in , the microwave device 12 may include a first coupling structure 83 between the first coaxial resonator 30 and the dielectric resonator 20 and a second coupling structure 83 between the second coaxial resonator 30 and the dielectric resonator 20 .
[0057] based on FIG. 3A to FIG. 3D , each coupling structure 83 can be designed to include a first coupling window 91 and a second coupling window 92. Each coupling window in the coupling structure 83 can be configured to couple the corresponding working mode of the dielectric resonator 20 to the coaxial resonator 30. In some embodiments, the coupling structure 83 can also include a rib structure 95 between the two coupling windows to enhance the coupling. The coupling structure 83 can be controlled by adjusting the dimensions w1, w2, w3, w4 and h1, h2, h3, h4 Figure 8B The coupling strengths in C12, C13, C24 and C34.
[0058] For example, the first coupling window 91 in the second coupling structure 83 can be configured to couple the first operating mode of the dielectric resonator 20 to the second coaxial resonator 30. The second coupling window 92 in the second coupling structure 83 can be configured to couple the second operating mode of the dielectric resonator 20 to the second coaxial resonator 30. By adjusting the size of the first coupling window 91 (e.g., Fig.10By adjusting the dimensions h1, h3 and w2 in the second coupling window 92, the coupling strength C24 between the first operating mode of the dielectric resonator 20 and the third coaxial resonator 30 is controllable. Similarly, by adjusting the dimensions h2, h4 and w3 of the second coupling window 92, the coupling strength C34 between the second operating mode of the dielectric resonator 20 and the third coaxial resonator 30 is controllable.
[0059] In an embodiment, Fig.9A As shown in , the housing 22 may include a top cover 97 defining the top surface of the dielectric resonator 20 and the coaxial resonator 30 and a bottom housing 98 defining the bottom surface and side surfaces of the dielectric resonator 20 and the coaxial resonator 30. The microwave device 12 may also include at least one of a first tuning screw 93 or a second tuning screw 94. The first tuning screw 93 may extend into the first coupling window 91 for tuning the coupling strength C24. The second tuning screw 94 may extend into the second coupling window 92 for tuning the coupling strength C34.
[0060] Fig.11 Pictured Fig. 8A The frequency response of the microwave device 12 is shown in FIG. Fig.11 A first frequency response curve 1110 having a low-end zero in the lower frequency band and a second frequency response curve 1120 having a high-end zero in the higher frequency band are shown. Figure 8B The coupling strength of the microwave device topology in the microwave device 12 can control the low-end or high-end transmission zero in the frequency response of the microwave device 12. In some embodiments, by adjusting Figure 8B The coupling strength of the microwave device topology in the microwave device 12 may be such that there is no transmission zero point in the frequency response of the microwave device 12.
[0061] FIG. 12A to FIG. 12D FIG. 2 shows a schematic structural view of a microwave device according to another embodiment of the present disclosure. Fig. 12A As shown in FIG. 1 , the microwave device 12 is a linear microwave device including two dielectric resonators 20 as described above and two coaxial resonators 30. The two dielectric resonators 20 may be coupled to each other and to between the two coaxial resonators 30. In some other embodiments, the microwave device 12 may include more than two dielectric resonators 20 coupled to each other in a dielectric resonator line between the two coaxial resonators 30.
[0062] like Fig. 12B As shown in FIG. 1 , the microwave device 12 is a linear microwave device including a plurality of dielectric resonators 20 as described above and at least two coaxial resonators 30. The plurality of dielectric resonators 20 and the at least two coaxial resonators 30 may be alternately coupled to each other.
[0063] like Fig. 12CAs shown in FIG. 1 , the microwave device 12 is an inverted “L” type microwave device including the dielectric resonator 20 as described above and two coaxial resonators 30. The two coaxial resonators 30 may be coupled with the dielectric resonator 20 at two adjacent side surfaces of the dielectric resonator 20.
[0064] like Fig.12D As shown in FIG. 1 , the microwave device 12 may include a first dielectric resonator 20 and a second dielectric resonator 20. The first dielectric resonator 20 may be coupled with a first coaxial resonator 30 and a second coaxial resonator 30 at two adjacent side surfaces of the first dielectric resonator 20. The second dielectric resonator 20 may be coupled with a third coaxial resonator 30 and a fourth coaxial resonator 30 at two adjacent side surfaces of the second dielectric resonator 20. The second coaxial resonator 30 may be coupled with the third coaxial resonator 30.
[0065] Although the above combined 8A to 12D The microwave device 12 is described, but these embodiments are provided as examples only. It is to be understood that the dielectric resonator 20 according to various embodiments of the present disclosure may also be used in other microwave devices 12. Other microwave devices may be designed according to the requirements and interfaces of the microwave device. In addition, the microwave device 12 may include one or more dielectric resonators 20 as described above.
[0066] Where a structural feature has been described, it may be replaced by a means for performing one or more of the functions of the structural feature, whether that function or those functions are described explicitly or implicitly.
[0067] In addition, although several specific implementation details are included in the above discussion, these should not be interpreted as limitations on the scope of the present disclosure, but rather as descriptions of features that may be specific to a particular embodiment. Certain features described in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented in multiple embodiments individually or in any suitable sub-combination.
[0068] Although the disclosure has been described in language specific to structural features and / or methodological actions, it is to be understood that the disclosure defined in the appended claims is not necessarily limited to the specific features or actions described above. Instead, the specific features and actions described above are disclosed as example forms of implementing the claims.
Claims
1. A dielectric resonator (20) in a microwave device, comprising: A housing (22) having at least one surface that is electrically conductive, the housing defining a cavity (23) comprising a first top surface (220), a first bottom surface (225) and at least four side surfaces (221, 222, 223, 224); as well as a dielectric body (21), which is arranged in the cavity (23) and includes a second top surface (210), a second bottom surface (219) and eight side surfaces (211, 212, 213, 214, 215, 216, 217, 218), The second top surface (210) is in conductive contact with the first top surface (220), the second bottom surface (219) is in conductive contact with the first bottom surface (225), a first group of four side surfaces (211, 212, 213, 214) of the eight side surfaces are parallel and separated from the four side surfaces (221, 222, 223, 224) of the cavity (23), and a second group of four side surfaces (215, 216, 217, 218) of the eight side surfaces face the four lateral edges of the cavity (23).
2. The dielectric resonator (20) of claim 1, wherein at least one of the following: The first top surface (220) and the first bottom surface (225) of the cavity (23) are square or rectangular in shape; or The second top surface (210) and the second bottom surface (219) of the dielectric body (21) are octagonal in shape.
3. The dielectric resonator (20) of claim 1 or 2, wherein at least one of the following: The first side surface (215) and the third side surface (217) of the second group of four side surfaces are opposite to and parallel to each other; or The second side surface (216) and the fourth side surface (218) of the second group of four side surfaces are opposite to and parallel to each other.
4. The dielectric resonator (20) according to any one of claims 1 to 3, wherein at least one of the following: A first side surface (215) and a third side surface (217) of the second set of four side surfaces are arranged relative to a first diagonal plane of the cavity (23) based on a desired field distribution of a first operating mode of the dielectric resonator, the first diagonal plane including two of the four lateral edges; or A second side surface (216) and a fourth side surface (218) of the second set of four side surfaces are arranged relative to a second diagonal plane of the cavity (23) based on a desired field distribution of a second operating mode of the dielectric resonator, the second diagonal plane including the other two of the four lateral edges.
5. The dielectric resonator (20) of claim 4, wherein at least one of the following: The first side surface (215) and the third side surface (217) are perpendicular to the first diagonal plane, so that the peak electric field intensity and the peak magnetic field intensity of the first working mode are distributed along the first diagonal plane; or The second side surface (216) and the fourth side surface (218) are perpendicular to the second diagonal plane, so that the peak electric field intensity and the peak magnetic field intensity of the second working mode are distributed along the second diagonal plane.
6. The dielectric resonator (20) according to any one of claims 3 to 5, wherein at least one of the following: The first width (c1) of the first side surface (215) is the same as the third width (c2) of the third side surface (217); or The second width (d1) of the second side surface (216) is the same as the fourth width (d2) of the fourth side surface (218).
7. The dielectric resonator (20) of any one of claims 1 to 6, wherein the dielectric resonator (20) is configured to support a first operating mode having a first resonant frequency and a second operating mode having a second resonant frequency, and wherein at least one of the following: The first resonant frequency is tunable by adjusting at least one of a first width (c1) of a first side surface (215) of the second group of four side surfaces and a third width (c2) of a third side surface (217) of the second group of four side surfaces, the third side surface being opposite to the first side surface (215); or The second resonant frequency is tunable by adjusting at least one of a second width (d1) of a second side surface (216) of the second group of four side surfaces and a fourth width (d2) of a fourth side surface (218) of the second group of four side surfaces, the fourth side surface being opposite to the second side surface (216).
8. The dielectric resonator (20) according to any one of claims 1 to 7, wherein at least one of the widths of the second set of four side surfaces (215, 216, 217, 218) is smaller than the smallest width of the widths of the first set of four side surfaces (211, 212, 213, 214).
9. The dielectric resonator (20) according to any one of claims 1 to 8, wherein the dielectric body (21) is provided with a hole (24) extending from the second top surface (210) to the second bottom surface (219) at the center of the dielectric body (21), and a fixing screw passing through the hole (24) fixes the dielectric body (21) to the housing (22); and The dielectric body (21) comprises a ceramic material having a dielectric constant in the range of 5 to 120.
10. A microwave device (12), comprising: At least one dielectric resonator (20) according to any one of claims 1 to 9; as well as at least two coaxial resonators (30), The at least one dielectric resonator (20) and the at least two coaxial resonators (30) are coupled to each other.
11. The microwave device (12) according to claim 10, further comprising: A coupling structure (83) is provided between a dielectric resonator in the at least one dielectric resonator (20) and a coaxial resonator in the at least two coaxial resonators (30), wherein the coupling structure (83) comprises a first coupling window (91) and a second coupling window (92), wherein the first coupling window is configured to couple a first operating mode of the dielectric resonator to the coaxial resonator, and the second coupling window is configured to couple a second operating mode of the dielectric resonator to the coaxial resonator.
12. The microwave device (12) according to claim 11, wherein: By adjusting the size of the first coupling window (91), the coupling strength between the first working mode of the dielectric resonator and the coaxial resonator is controllable; as well as By adjusting the size of the second coupling window (92), the coupling strength between the second working mode of the dielectric resonator and the coaxial resonator is controllable.
13. The microwave device (12) according to claim 11 or 12, wherein the coupling structure (83) further comprises a rib structure (95) between the first coupling window (91) and the second coupling window (92).
14. The microwave device (12) according to any one of claims 11 to 13, further comprising at least one of the following: a first tuning screw (93), the first tuning screw extending into the first coupling window (91); or A second tuning screw (94) extends into the second coupling window (92).
15. The microwave device (12) according to any one of claims 10 to 14, wherein: The at least one dielectric resonator (20) comprises a dielectric resonator (20), and The at least two coaxial resonators (30) include two coaxial resonators (30) coupled to the dielectric resonator (20) at two opposite side surfaces of the dielectric resonator (20).
16. The microwave device (12) according to any one of claims 10 to 14, wherein: The at least one dielectric resonator (20) comprises a plurality of dielectric resonators coupled to each other in a dielectric resonator line, The at least two coaxial resonators (30) include two coaxial resonators (30), and The dielectric resonator line is coupled between the two coaxial resonators (30).
17. The microwave device (12) according to any one of claims 10 to 14, wherein: The at least one dielectric resonator (20) comprises a plurality of dielectric resonators, and The plurality of dielectric resonators and the at least two coaxial resonators (30) are alternately coupled to each other.
18. The microwave device (12) according to any one of claims 10 to 14, wherein: The at least one dielectric resonator includes a first dielectric resonator, and The at least two coaxial resonators include a first coaxial resonator and a second coaxial resonator, and the first coaxial resonator and the second coaxial resonator are coupled with the first dielectric resonator at two adjacent side surfaces of the first dielectric resonator.
19. The microwave device (12) according to claim 18, wherein: The at least one dielectric resonator (20) further comprises a second dielectric resonator, The at least two coaxial resonators (30) further include a third coaxial resonator and a fourth coaxial resonator, the third coaxial resonator and the fourth coaxial resonator being coupled to the second dielectric resonator at two adjacent side surfaces of the second dielectric resonator, and The second coaxial resonator is coupled to the third coaxial resonator.
20. The microwave device (12) according to any one of claims 10 to 19, wherein the microwave device is a filter.