Driving substrate, light-emitting device and preparation method thereof

Abstract

The invention discloses a driving substrate, a light-emitting device and a preparation method thereof. The driving substrate comprises a substrate, the substrate comprises a first surface, a second surface and a plurality of side surfaces, the first surface and the second surface are opposite, and at least one of the side surfaces is a selected side surface; the flexible film is arranged on the first surface, the selected side surface and the part, close to the selected side surface, of the second surface; the flexible film comprises a first area located on the first surface, a second area located on the second surface and a bending area located between the first area and the second area, and the bending area comprises a first corner area, a second corner area and a side face area; the wiring layer, the electrode layer and the connecting lead layer are sequentially arranged on one side, far away from the substrate, of the flexible film; the wiring layer is located in the first area, the second area and the side area; the electrode layer comprises a plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes and a plurality of fourth electrodes, and each third electrode is electrically connected with one fourth electrode through the wiring layer; the connecting lead layer comprises a plurality of first connecting leads and a plurality of second connecting leads.

Description

Driving substrate, light emitting device and manufacturing method thereof

[0001] The present disclosure relates to the field of display technology, and in particular to a driving substrate, a light-emitting device and a preparation method thereof.

[0002] Mini LED (Mini Light-Emitting Diode) / Micro LED (Micro Light-Emitting Diode) display devices have the advantages of high brightness, clear display image and low power consumption, and have good application prospects. They can be applied to large-scale splicing display devices. The size of the splicing seam in the splicing display device is an important factor affecting its display effect. Therefore, narrow-frame display devices have become one of the development trends.

[0003]

[0004] On the one hand, a driving substrate is provided. The driving substrate includes a base substrate, including a first surface, a second surface and a plurality of side surfaces opposite to each other, at least one of the plurality of side surfaces being a selected side surface; a flexible film disposed on the first surface, the selected side surface, and a portion of the second surface close to the selected side surface; wherein the flexible film includes a first area located on the first surface, a second area located on the second surface, and a bending area located between the first area and the second area, wherein the bending area includes a first corner area, a second corner area and a side area connecting the first corner area and the second corner area; a wiring layer, an electrode layer and a connecting lead layer sequentially disposed on a side of the flexible film away from the base substrate; wherein the wiring layer is located in the first area, the second area and the side area; The electrode layer includes a plurality of first electrodes located in the first area, a plurality of second electrodes located in the second area, a plurality of third electrodes located in the side area and close to the first corner area, and a plurality of fourth electrodes located in the side area and close to the second corner area, and each third electrode is electrically connected to a fourth electrode through the routing layer; the connecting lead layer includes a plurality of first connecting leads and a plurality of second connecting leads; the plurality of first connecting leads are located in the first corner area, and both ends extend to the first area and the side area, and each first connecting lead connects a first electrode and a third electrode; the plurality of second connecting leads are located on the second corner area, and both ends extend to the second area and the side area, and each second connecting lead connects a second electrode and a fourth electrode.

[0005] In some embodiments, the driving substrate further includes at least one inorganic layer and / or at least one organic layer disposed on a side of the flexible film away from the base substrate, the inorganic layer being located in the first region, the second region and the side region, and the organic layer being located in the first region and the second region; the connecting lead layer is in contact with the flexible film.

[0006] In some embodiments, the thickness of the connecting lead layer is 2 μm to 5 μm.

[0007] In some embodiments, the widths of the plurality of first connecting leads are substantially equal, and the widths of the plurality of second connecting leads are substantially equal.

[0008] In some embodiments, the driving substrate includes an organic layer, and the organic layer is disposed on a side of the electrode layer away from the base substrate.

[0009] In some embodiments, the driving substrate also includes at least one inorganic layer, and the at least one inorganic layer includes: a buffer layer arranged between the flexible film and the routing layer, the buffer layer is located in the first area, the side area and the second area; a first insulating layer arranged between the routing layer and the electrode layer, the first insulating layer is located in the first area, the side area and the second area; the first electrode is electrically connected to the portion of the routing layer located in the first area through a first via hole penetrating the first insulating layer, the second electrode is electrically connected to the portion of the routing layer located in the second area through a second via hole penetrating the first insulating layer, the third electrode and the fourth electrode are electrically connected to the portion of the routing layer located in the side area through a third via hole and a fourth via hole penetrating the first insulating layer, respectively; a second insulating layer is arranged on the side of the organic layer away from the base substrate, the second insulating layer is located in the first area and the second area.

[0010] In some embodiments, the routing layer includes a plurality of first routing lines arranged in the first area, a plurality of second routing lines arranged in the second area, and a plurality of third routing lines arranged in the side area, and each of the third routing lines is electrically connected to a third electrode among the plurality of third electrodes and a fourth electrode among the plurality of fourth electrodes.

[0011] In some embodiments, a size of the first electrode along its extension direction ranges from 50 μm to 100 μm.

[0012] In some embodiments, the sizes of the third electrode and the fourth electrode along their respective extension directions are both in the range of 30 μm to 50 μm.

[0013] In some embodiments, the distance between the boundary line between the first zone and the first corner zone and the selected side surface is 15 μm to 25 μm; and / or the distance between the boundary line between the second zone and the second corner zone and the selected side surface is 15 μm to 25 μm.

[0014] In some embodiments, the driving substrate further includes a protective layer located in the bending zone, a portion of the first zone close to the bending zone, and a portion of the second zone close to the bending zone, and the protective layer covers the connecting lead layer, the routing layer, and the electrode layer.

[0015] On the other hand, a light-emitting device is provided, comprising a driving substrate as described in any one of the above aspects; a plurality of light-emitting devices located on the first surface, the plurality of light-emitting devices being electrically connected to the plurality of first electrodes; and a driving circuit board located on the second surface, the driving circuit board being electrically connected to the plurality of second electrodes.

[0016] In another aspect, a method for preparing a light-emitting device is provided. The light-emitting device includes providing an initial substrate, the initial substrate including an initial first surface and an initial second surface opposite to each other; the initial substrate including a reserved area and an area to be removed; forming a flexible film on the initial first surface of the initial substrate; wherein the flexible film includes a first area, a second area, and a bending area between the first area and the second area, the bending area including a first corner area, a second corner area, and a side area between the first corner area and the second corner area; forming a routing layer on a side of the flexible film away from the initial substrate, the routing layer being located in the first area, the second area, and the side area; forming an electrode layer on a side of the routing layer away from the initial substrate, the electrode layer including a plurality of first electrodes located in the first area, a plurality of second electrodes located in the second area, a plurality of third electrodes located in the side area and close to the first corner area, and a plurality of fourth electrodes located in the side area and close to the second corner area, each third electrode being electrically connected to a fourth electrode through the routing layer.

[0017] The bending area and the second area of ​​the flexible film are peeled off, and the part of the to-be-removed area of ​​the initial base substrate is removed to form a base substrate; the base substrate includes a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, and at least one side surface of the plurality of side surfaces is a selected side surface; the flexible film is bent so that the part of the flexible film located in the bending area and the second area is attached to the selected side surface and the second surface of the base substrate; a connecting lead layer is formed on the side of the flexible film away from the base substrate; the connecting lead layer includes a plurality of first connecting leads and a plurality of second connecting leads, each of the first connecting leads and each of the second connecting leads are respectively located in the first corner area and the second corner area, and both ends of each of the first connecting leads extend to the first area and the side area, and both ends of each of the second connecting leads extend to the second area and the side area; each of the first connecting leads is electrically connected to a first electrode among the plurality of first electrodes, and a third electrode among the plurality of third electrodes; each of the second connecting leads is electrically connected to a second electrode among the plurality of second electrodes, and a fourth electrode among the plurality of fourth electrodes.

[0018] In some embodiments, the method for preparing the light-emitting device further includes: after forming the flexible film on the first surface of the initial substrate substrate, before forming the wiring layer on the side of the flexible film away from the initial substrate substrate, including: forming a buffer layer on the side of the flexible film away from the initial substrate substrate, the buffer layer is located in the first area, the side area and the second area; after forming the wiring layer on the side of the flexible film away from the initial substrate substrate, including: forming a first insulating layer on the side of the wiring layer away from the flexible film, the first insulating layer is located in the first area, the side area and the second area, the first insulating layer includes a plurality of first vias, a plurality of second vias, a plurality of third vias and a plurality of fourth vias; forming the electrode layer on the side of the wiring layer away from the initial substrate substrate, including: forming a first insulating layer on the side of the first insulating layer away from the initial substrate substrate; A plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes and a plurality of fourth electrodes are formed on one side of the initial base substrate, so that the first electrode is electrically connected to the portion of the wiring layer located in the first area by penetrating the first via hole, the second electrode is electrically connected to the portion of the wiring layer located in the second area by penetrating the second via hole, and the third electrode and the fourth electrode are electrically connected to the portion of the wiring layer located in the side area by respectively penetrating the third via hole and the fourth via hole of the first insulating layer; after the electrode layer is formed on the side of the wiring layer away from the initial base substrate, the method further includes: forming an organic layer on the side of the electrode layer away from the initial base substrate, the organic layer being located in the first area and the second area; forming a second insulating layer on the side of the organic layer away from the initial base substrate, the second insulating layer being located in the first area and the second area.

[0019] In some embodiments, forming a connecting wire layer on a side of the flexible film away from the base substrate includes: using a three-dimensional printing process to print the plurality of first connecting wires and the plurality of second connecting wires respectively.

[0020] In some embodiments, the method for preparing the light emitting device further includes: after forming the connecting wire layer, forming a protective layer on the connecting wire layer, the routing layer and the electrode layer.

[0021] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0022] FIG1 is a plan view of a driving substrate according to some embodiments of the present disclosure;

[0023] FIG2 is a partial enlarged view at position M according to FIG1;

[0024] 3 is a cross-sectional structural diagram of a driving substrate provided in some embodiments of the present disclosure in a bent state taken along the cutting line EE' shown in FIG. 1 ;

[0025] FIG. 4 is a cross-sectional structural diagram of a driving substrate provided in some embodiments of the present disclosure in a non-bent state taken along the section line EE′ shown in FIG. 1 ;

[0026] FIG. 5 is a cross-sectional structural diagram of a driving substrate provided in some embodiments of the present disclosure in a non-bent state taken along the cutting line CC′ shown in FIG. 1 ;

[0027] FIG6 is a cross-sectional structural diagram of a driving substrate provided in accordance with some embodiments of the present disclosure, obtained by taking a cross section along the cutting line DD′ shown in FIG1 in a non-bent state;

[0028] FIG. 7 is another cross-sectional structural diagram of a driving substrate provided in some embodiments of the present disclosure, obtained by taking a cross section along the cutting line EE′ shown in FIG. 1 in a bent state;

[0029] FIG8 is a cross-sectional structural diagram of a driving substrate provided in a bent state along the cutting line EE′ shown in FIG1 according to some embodiments of the present disclosure;

[0030] FIG9 is a structural diagram of a light emitting device provided according to some embodiments of the present disclosure;

[0031] FIG10A is a diagram of step S1 in a method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0032] FIG10B is a diagram of step S2 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0033] FIG10C is a diagram of step S3 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0034] FIG10D is a diagram of step S4 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0035] FIG10E is a diagram of step S5 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0036] FIG10F is a diagram of step S6 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0037] FIG10G is a diagram of step S7 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0038] FIG10H is a diagram of step S8 in the method for preparing a light emitting device according to some embodiments of the present disclosure;

[0039] FIG10I is a diagram of step S9 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0040] FIG10J is a diagram of step S10 in the method for preparing a light emitting device according to some embodiments of the present disclosure;

[0041] FIG10K is a diagram of step S11 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0042] FIG. 10L is a diagram of step S12 in the method for preparing a light-emitting device according to some embodiments of the present disclosure.

[0043] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0044] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0045] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0046] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0047] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0048] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0049] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0050] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0051] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality may be, for example, the difference between the two equalities is less than or equal to 5% of either one.

[0052] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0053] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0054] At present, narrow borders are the development trend of display panels. By setting the binding terminals to be connected to the circuit board in the display panel on the back of the display panel, the effective area of ​​the display area can be increased, thereby achieving a narrower border. The inventors found that in some embodiments, the wiring and the binding terminals of the display area of ​​the display panel are respectively located on opposite sides of the display panel substrate, and the wiring is electrically connected to the binding terminals through side wiring; however, the side wiring method requires chamfering the edges of the substrate (made of silicon oxide or quartz, etc.) to reduce stress and make the side leads less likely to break. Since the material of the substrate is relatively brittle and the chamfering process is difficult, the chamfering size is difficult to control, and it is easy to collapse the edge. In some other embodiments, a PI (polyimide) layer can be provided on the base substrate, and front binding terminals, back binding terminals, and connecting leads connecting the front binding terminals and the back binding terminals are first made on the surface of the same side of the PI layer, and then the back binding terminals are bent to the back side of the base substrate by bending the PI layer; however, in the process of bending the PI layer, in order to ensure the flatness of the display panel, the PI needs to fit the surface and edges of the base substrate as completely as possible, that is, there is a 90-degree bending area in the PI layer, and this area mainly includes connecting leads, which will cause the local stress of the connecting leads to increase, cause breakage, and reduce the reliability of the display panel.

[0055] Based on this, some embodiments of the present disclosure provide a driving substrate, a light-emitting device and a method for manufacturing the same, so as to achieve a thin display product with a narrow frame, and to ensure or even improve the reliability of the display product.

[0056] The driving substrate, the light-emitting device and the preparation method thereof provided by the present disclosure are respectively introduced below.

[0057] FIG1 is a schematic plan view of a flexible film in a driving substrate provided by an embodiment of the present invention in a non-bending state, FIG2 is an enlarged view of FIG1 at M, and FIG1 has three cutting lines CC', DD' and EE'. To clearly illustrate the positions of the film layers in the driving substrate, FIG3 to FIG10L are cross-sectional views of the driving substrate along these three cutting lines CC', DD' and EE' in different steps. The upper left corner of each figure will clearly indicate which cutting line corresponds to the cross-sectional structure. FIG3 is a cross-sectional view of the driving substrate in a bent state along the cutting line EE' of FIG1, and FIG4 is a cross-sectional view of the driving substrate before bending along the cutting line EE' in FIG1.

[0058] Some embodiments of the present invention provide a driving substrate 100, as shown in FIG3, the driving substrate 100 includes a base substrate 1, a flexible film 2, a wiring layer 4, an electrode layer 8 and a connecting lead layer 9 which are sequentially stacked. It should be noted that the preparation order of each film layer sequentially stacked on the base substrate is consistent with the stacking order.

[0059] The base substrate 1 includes a first surface 1 a , a second surface 1 b , and a plurality of side surfaces 1 c , which are opposite to each other. At least one of the plurality of side surfaces 1 c is a selected side surface 1 cc .

[0060] Exemplarily, the base substrate 1 has a supporting and protective function, and its material may be a rigid material, specifically any one of quartz, glass, silicon dioxide, silicon, plastic, and polymethyl methacrylate, which is not limited here.

[0061] The flexible film 2 is disposed on the first surface 1a, the selected side surface 1cc and the portion of the second surface 1b close to the selected side surface 1cc; wherein the flexible film 2 includes a first area A1 located on the first surface 1a, a second area A2 located on the second surface 1b and a bending area A3 located between the first area A1 and the second area A2, and the bending area A3 includes a first corner area A31, a second corner area A32 and a side area A33 connecting the first corner area A31 and the second corner area A32. Exemplarily, the material of the flexible film 2 is a flexible material with strong bending performance, and exemplary, the material of the flexible film 2 is polyimide (PI).

[0062] It should be noted that the first area A1 is configured to set up light-emitting devices, control circuits and other devices, and the second area A2 is configured to set up electrodes and connecting lines for binding a driving circuit board, and the driving circuit board includes at least one of a flexible circuit board, a printed circuit board, a programmable logic array circuit board or an integrated circuit. The bending area A3 is located between the first area A1 and the second area A2, and the flexible film 2 can be bent in the bending area A3, so that the second area A2 of the flexible film 2 is bent to the second surface 1b of the base substrate 1. Among them, the bending area A3 includes a first corner area A31, a second corner area A32 and a side area A33, and the side area A33 is located on the selected side surface 1cc, the first corner area A31 is located at the connection position of the first surface 1a and the selected side surface 1cc, and the second corner area is located at the connection position of the second surface 1b and the selected side surface 1cc.

[0063] The routing layer 4, the electrode layer 8 and the connecting lead layer 9 are arranged on the side of the flexible film 2 away from the base substrate 1. The routing layer 4 is located in the first area A1, the second area A2 and the side area A33; in some embodiments, as shown in FIG3, the routing layer 4 includes a plurality of first routing lines 41 arranged in the first area A1, a plurality of second routing lines 42 arranged in the second area A2 and a plurality of third routing lines 43 arranged in the side area A33.

[0064] The electrode layer 8 includes a plurality of first electrodes 81 located in the first area A1, a plurality of second electrodes 82 located in the second area A2, a plurality of third electrodes 83 located in the side area A33 and close to the first corner area A31, and a plurality of fourth electrodes 84 located in the side area A33 and close to the second corner area A32, each third electrode 83 is electrically connected to a fourth electrode 84 through the wiring layer 4, wherein each third wiring 43 is electrically connected to a third electrode 83 in the plurality of third electrodes 83 and a fourth electrode 84 in the plurality of fourth electrodes 84, as shown in FIG. 2, that is, the corresponding third electrodes and fourth electrodes 84 are connected through the third wiring 43. As shown in FIG. 3, each first electrode is electrically connected to a first wiring 41, and each second electrode is electrically connected to a second wiring 42.

[0065] The connecting lead layer 9 includes a plurality of first connecting leads 91 and a plurality of second connecting leads 92; the plurality of first connecting leads 91 are located in the first corner area A31, and both ends extend to the first area A1 and the side area A33, and each first connecting lead 91 connects a first electrode 81 and a third electrode 83; the plurality of second connecting leads 92 are located on the second corner area A32, and both ends extend to the second area A2 and the side area A33, and each second connecting lead 92 connects a second electrode 82 and a fourth electrode 84.

[0066] According to the above connection relationship, as shown in Figure 3, the corresponding first wiring 41, the first electrode 81, the first connecting lead 91, the third electrode 83, the third wiring 43, the fourth electrode 84, the second connecting lead 92, the second electrode 82 and the first wiring 41 are electrically connected in sequence to realize signal transmission between the front and back sides of the driving substrate.

[0067] Exemplarily, the materials of the wiring layer 4, the electrode layer 8 and the connecting lead layer 9 are all metals, for example, the wiring layer 4, the electrode layer 8 and the connecting lead layer 9 can be set to at least one of copper, molybdenum, titanium or aluminum, for example, the connecting lead layer 9 can have a laminated structure of titanium / aluminum / titanium. The "electrical connection" between the components of each layer mentioned above means that there is contact between the two, and the metal material is conductive, thereby achieving electrical connection.

[0068] The flexible film 2 and the portions of the film layers stacked on the flexible film 2 located in the bending area A3 and the second area A2 can be bent to the selected side surface 1cc and the second surface 1b of the base substrate 1. As shown in FIG3 , the portion of the flexible film 2 located in the bending area A3 is attached to the edge of the first surface 1a of the base substrate 1 close to the selected side surface 1cc, all the selected side surfaces 1cc and part of the edge of the second surface 1b, and the portion of the flexible film 2 located in the second area A2 is attached to the second surface 1b of the base substrate 1.

[0069] The preparation process of the above-mentioned driving substrate 100 is briefly described as follows: after the flexible film 2, the wiring layer 4 and the electrode layer 8 are formed in sequence, the flexible film 2 is first bent so that the second area of ​​the flexible film and the second wiring and the second electrode are located on the second surface side of the base substrate, and the side area of ​​the flexible film and the third electrode, the third wiring and the fourth electrode are located on the selected side surface side of the base substrate. The first corner area A31 of the bent flexible film is in contact with the selected side surface 1cc and the first surface 1a of the base substrate 1, and the second corner area A32 of the bent flexible film is in contact with the selected side surface 1cc and the second surface 1b of the base substrate 1. Then, a connecting lead layer 9 is formed on the side of the electrode layer 8 away from the base substrate 1, so that the connecting lead layer 9 is electrically connected to the electrode layer 8.

[0070] In the above-mentioned driving substrate 100, since the flexible film 2 is first bent and then the connecting lead layer 9 is formed on the side of the electrode layer 8 away from the base substrate 1, that is, before the flexible film 2 is bent, no connecting leads are set in the first corner area A31 and the second corner area A32, and the connecting lead layer 9 is formed after bending. In this way, the problem of increased stress and fracture of the connecting leads on the surface of the flexible film 2 (especially the areas to be bent: the first corner area A31 and the second corner area A32) during the bending process of the flexible film 2 in the related art can be avoided, thereby ensuring the connection stability of the multiple first connecting leads 91 and the multiple second connecting leads 92 with the electrode layer 8 respectively, and enhancing the reliability of the driving substrate 100.

[0071] In some embodiments, the connecting leads connecting the front and back sides of the substrate are prepared by a printing process, which usually requires three steps to print the part of the connecting leads located on the front side of the substrate, the part located on the side of the substrate, and the part located on the back side of the substrate respectively. The printing efficiency is low, and high-precision scanning of all positions on the side is required, making the process difficult to implement.

[0072] In the driving substrate 100 provided in the above-mentioned embodiment of the present disclosure, the portion of the wiring layer 4 located in the side area A33 is electrically connected to the third electrode 83 and the fourth electrode 84 of the electrode layer 8, that is, the third electrode 83 and the fourth electrode 84 are connected through the third wiring 43. Therefore, in the process of preparing the connecting lead layer 9, it is only necessary to form the first connecting lead 91 and the second connecting lead 92, and the electrical connection between the first electrode 81 and the third electrode 83 is realized through the first connecting lead 91, and the electrical connection between the fourth electrode 84 and the second electrode 82 is realized through the second connecting lead 92, so that the signal transmission between the first electrode 81 and the second electrode 82 can be realized. Therefore, there is no need to form a connecting lead layer in the side area A33, and the portion of the wiring layer 4 located in the side area A33 is equivalent to the connecting lead between the third electrode 83 and the fourth electrode 84, which can reduce the difficulty of preparing the connecting lead layer, simplify the process of forming the connecting lead layer 9, and improve the efficiency of preparing the driving substrate. For example, when the connecting lead layer is prepared by the printing process, two steps are used to print and form a plurality of first connecting leads 91 and a plurality of second connecting leads 92 respectively, thereby saving a step of printing the connecting lead layer in the side area, improving the preparation efficiency, and improving the problem of printing pin collision in the process of preparing high-precision connecting leads.

[0073] In some embodiments, as shown in FIG. 3 , the thickness T of the connecting lead layer 9 is 2 μm to 5 μm.

[0074] Exemplarily, the thickness T of the connecting lead layer 9 can be 2μm, 2.5μm or 5μm. As shown in FIG3 , the thickness of the connecting lead layer 9 is not equal everywhere. The preparation of the connecting lead layer 9 is, for example, to form the first connecting lead 91 and the first connecting lead 92 respectively by three-dimensional printing after the flexible film 2 is bent, and the two ends of the first connecting lead 91 extend to the first area A1 and the side area A33, and the two ends of the second connecting lead 92 extend to the second area A2 and the side area A33, wherein the thickness of the first connecting lead 91 located in the first corner area A31 and the second connecting lead 92 located in the second corner area A32 is larger, for example, the thickness T is 5μm.

[0075] In some embodiments, the widths of the plurality of first connection leads 91 are substantially equal, and the widths of the plurality of second connection leads 92 are substantially equal.

[0076] Exemplarily, in the process of preparing the connecting lead layer 9, a plurality of first connecting leads 91 may be prepared first, and then a plurality of second connecting leads 92 may be prepared, or a plurality of second connecting leads 92 may be prepared first, and then a plurality of first connecting leads 91 may be prepared. The order of preparing the plurality of first connecting leads 91 and the plurality of second connecting leads 92 is not limited here. It should be noted that, in the process of preparing the plurality of first connecting leads 91 or the plurality of second connecting leads 92, for example, they are all three-dimensionally printed at one time, so the widths of the plurality of first connecting leads 91 formed are roughly equal, the widths of the plurality of second connecting leads 92 are roughly equal, the plurality of first connecting leads 91 and the plurality of second connecting leads 92 are evenly distributed, a larger number of first connecting leads and second connecting leads can be formed under the same size conditions, the accuracy of the routing is improved, so that a smaller device can be adapted to the first surface of the driving substrate, and the resolution of the resulting display panel is higher. Moreover, in the process of preparing the connecting lead layer 9, it is only necessary to use a three-dimensional printing process to print twice. Compared with the existing printing process, which prints the front, side and back of the substrate separately, it can reduce the process of printing the side leads once, thereby improving printing efficiency.

[0077] In some embodiments, as shown in Figures 3 and 4, the driving substrate 100 also includes at least one inorganic layer 11 and / or at least one organic layer 6 arranged on the side of the flexible film 2 away from the base substrate 1, the inorganic layer 11 is located in the first area A1, the second area A2 and the side area A33, and the organic layer 6 is located in the first area A1 and the second area A2; the connecting lead layer 9 is in partial contact with the flexible film 2.

[0078] As shown in Figure 4, when the driving substrate 100 is in a state before bending, the inorganic layer 11 and / or the organic layer 6 are arranged on the side of the flexible film 2 away from the base substrate 1, and both are hollowed out at the positions of the first corner area A31 and the second corner area A32, that is, in the first corner area A31 and the second corner area A32, the surface of the flexible film 2 is exposed. Therefore, when the connecting lead layer 9 is prepared later, there is partial contact between the connecting lead layer 9 and the surface of the flexible film 2.

[0079] It should be noted that Figure 4 is only for more clearly illustrating the positions of the film layers in the driving substrate. The driving substrate is in a non-bent state so that the same film layer is located on the same plane. The structure shown in Figure 4 does not actually exist in the final display device. In some embodiments provided in the present disclosure, before the connecting lead layer 9 and the protective layer 10 are formed, the driving substrate has been bent, which is the state shown in Figure 3.

[0080] The inorganic layer and the organic layer in the driving substrate 100 play an insulating or protective role. Removing the inorganic layer and the organic layer in the first corner area A31 and the second corner area A32 can prevent the organic layer / inorganic layer in the first corner area A31 and the second corner area A32 from breaking due to stress concentration during the bending process of the flexible film, causing water and oxygen to enter from the cracks, affecting the insulation and protection effects. In addition, since there is only a flexible film in the first corner area A31 and the second corner area A32, and the thickness of the flexible film is relatively thin, the flexible film is easier to bend and can achieve the minimum angle bending. The flexible film can be as completely attached to the surface of the substrate and its edges as possible to achieve a bending close to 90 degrees, thereby ensuring the flatness of the film layer of the driving substrate. In addition, after the flexible film is bent, a connecting lead layer is prepared. The connecting lead layer is in contact with part of the flexible film, and the other part is overlapped on the electrode layer. The bonding force is good, which improves the reliability of the connecting lead layer.

[0081] In some embodiments, as shown in FIG. 3 and FIG. 4 , the driving substrate 100 includes an organic layer 6 , and the organic layer 6 is disposed on a side of the electrode layer 8 away from the base substrate 1 .

[0082] Exemplarily, the material of the organic layer 6 is a resin material.

[0083] Exemplarily, in the first area A1 and the second area A2, the organic layer 6 is arranged on the side of the electrode layer 8 away from the base substrate 1. When the connecting lead layer 9 is not prepared, the organic layer 6 exposes the first electrode 81 electrically connected to the first connecting lead 91 and the second electrode 82 electrically connected to the second connecting lead 92 away from the surface of the base substrate 1. When the connecting lead layer 9 is prepared later, the connecting lead layer 9 can contact the surfaces of the first electrode 81 and the second electrode 82.

[0084] It should be noted that, referring to Fig. 3, the distance L1 between the surface of the organic layer 6 away from the substrate and the substrate is greater than the distance L2 between the surface of the connecting lead layer away from the substrate and the substrate. The surface of the connecting lead layer 9 is not flush with the surface of the organic layer 6, and there is a thickness difference between the organic layer 6 and the connecting lead layer 9. In this way, after the connecting lead layer 9 is formed, it can prevent the circuit from being scratched in the subsequent process and assembly process, thereby improving the reliability of the driving substrate 100.

[0085] In some embodiments, referring to FIG. 4 , the driving substrate 100 further includes the at least one inorganic layer 11 , which includes: a buffer layer 3 disposed between the flexible film 2 and the wiring layer 4 , the buffer layer 3 being located in the first area A1 , the side area A33 , and the second area A2 .

[0086] Exemplarily, the material of the buffer layer 3 is silicon nitride, silicon oxide or silicon oxynitride, and the thickness of the buffer layer 3 is 0.2 μm to 0.6 μm, for example, the thickness of the buffer layer 3 is 0.2 μm, or 0.4 μm, or 0.6 μm. The buffer layer 3 is configured to block water vapor from entering the interior of the drive substrate 100. Referring to FIG. 5 , the buffer layer 3 shown in FIG. 5 has a uniform thickness at each position, and the setting position of the buffer layer 3 corresponds to the setting of the wiring layer 4, and there is a gap between two adjacent third wirings 43 along the direction of the cross-sectional line CC', so it is arranged in an interval arrangement as shown in FIG. 5 .

[0087] Continuing with reference to Figure 4, the inorganic layer 11 also includes a first insulating layer 5 arranged between the routing layer 4 and the electrode layer 8, and the first insulating layer 5 is located in the first area A1, the side area A33 and the second area A2; the first electrode 81 is electrically connected to the portion of the routing layer 4 located in the first area A1 (the first routing 41) through a first via hole penetrating the first insulating layer 5, the second electrode 82 is electrically connected to the portion of the routing layer 4 located in the second area A2 (the second routing 42) through a second via hole 52 penetrating the first insulating layer 5, and the third electrode 83 and the fourth electrode 84 are electrically connected to the portion of the routing layer 4 located in the side area A33 (the third routing 43) through a third via hole and a fourth via hole penetrating the first insulating layer 5, respectively.

[0088] Exemplarily, the material of the first insulating layer 5 is silicon nitride, silicon oxide or silicon oxynitride. The first insulating layer 5 has the same pattern as the wiring layer 4 and covers the wiring layer 4, thereby protecting the wiring layer 4 and preventing water and oxygen from corroding the metal of the wiring layer 4.

[0089] The inorganic layer 11 further includes a second insulating layer 7 disposed on a side of the organic layer 6 away from the base substrate 1, and the second insulating layer 7 is located in the first area A1 and the second area A2. Exemplarily, the material of the second insulating layer 7 is silicon nitride, silicon oxide, or silicon oxynitride. The second insulating layer has the same pattern as the organic layer 6 and covers the organic layer 6, thereby protecting the organic layer 6 and preventing water and oxygen from corroding the organic layer 6.

[0090] Since the materials of the buffer layer 3, the first insulating layer 5 and the second insulating layer 7 are all inorganic materials, the bending performance is poor and it is easy to break during the bending process. Therefore, the initially formed buffer layer 3, the first insulating layer 5 and the second insulating layer 7 located in the first corner area A31 and the second corner area A32 are completely removed, as shown in Figure 6. In this way, the first corner area A31 and the second corner area A32 only include the flexible film 2, so that in the subsequent bending process, the flexible film 2 is easier to bend, and there will be no problems such as inorganic layer breakage.

[0091] In some embodiments, as shown in Figure 3, the routing layer 4 includes a plurality of first routing lines 41 arranged in the first area A1, a plurality of second routing lines 42 arranged in the second area A2, and a plurality of third routing lines 43 arranged in the side area A33, and each third routing line 43 is electrically connected to a third electrode 83 among the plurality of third electrodes 83 and a fourth electrode 84 among the plurality of fourth electrodes 84.

[0092] Exemplarily, the first insulating layer 5 includes multiple first vias, multiple second vias, multiple third vias and multiple fourth vias. The first electrode 81 is electrically connected to the first routing 41 of the routing layer 4 located in the first area A1 through the first via penetrating the first insulating layer 5. The second electrode 82 is electrically connected to the second routing 42 of the routing layer 4 located in the second area A2 through the second via penetrating the first insulating layer 5. The third electrode 83 and the fourth electrode 84 are electrically connected to the third routing 43 of the routing layer 4 located in the side area A33 through the third via and the fourth via penetrating the first insulating layer 5, respectively.

[0093] In some embodiments, as shown in FIG. 7 , a dimension D1 of the first electrode 81 along its extension direction ranges from 50 μm to 100 μm.

[0094] Exemplarily, referring to FIG. 7 , in FIG. 7 , the extension direction of the first electrode 81 is taken as the first direction X, and the dimension D1 of the first electrode 81 in the first direction X may be 50 μm, 70 μm, 90 μm or 100 μm.

[0095] In some embodiments, as shown in FIG. 4 , the dimensions D2 of the third electrode 83 and the fourth electrode 84 along their respective extension directions are both in the range of 30 μm to 50 μm.

[0096] Exemplarily, referring to FIG. 7 , in FIG. 7 , the extension direction of the third electrode 83 and the fourth electrode 84 is taken as the second direction Y, and the size D2 of the third electrode 83 and the fourth electrode 84 in the second direction Y may be 30 μm, 40 μm or 50 μm.

[0097] In some examples, as shown in Figure 8, one end of the first connecting lead 91 contacts a portion of the upper surface of the first electrode 81, the other end of the first connecting lead contacts the entire upper surface of the third electrode 83, one end of the second connecting lead 92 contacts a portion of the upper surface of the second electrode 82, and the other end of the second connecting lead 92 contacts the entire upper surface of the fourth electrode 84, thereby ensuring sufficient overlap between the connecting lead layer and the electrode layer, reducing contact resistance, and improving signal transmission performance.

[0098] As shown in FIG. 4 , when the flexible film 2 is not bent, a dimension D5 of the first corner area A31 along the first direction X is 30 μm to 50 μm, and a dimension D6 of the second corner area A32 along the first direction X is 30 μm to 50 μm.

[0099] In some embodiments, as shown in FIG. 7 , a distance D3 between a boundary line Q1 of the first area A1 and the first corner area A31 and the selected side surface 1 cc is 15 μm to 25 μm.

[0100] It can be understood that since a portion of the first corner zone A31 extends along the first direction X and the other portion extends along the second direction Y, the distance D3 between the boundary line Q1 between the first zone A1 and the first corner zone A31 and the selected side surface 1cc, that is, the size of the first corner zone A31 in the first direction X, wherein the distance D3 between the boundary line Q1 between the first zone A1 and the first corner zone A31 and the selected side surface 1cc may be 15μm, 20μm or 25μm.

[0101] In some embodiments, as shown in FIG. 7 , a distance D4 between a boundary line Q2 of the second area A2 and the second corner area A32 and the selected side surface 1 cc is 15 μm to 25 μm.

[0102] Referring to the above description of D3, it can be seen that a portion of the second corner area A32 extends along the first direction X, and the other portion extends along the second direction Y. Therefore, the distance D4 between the boundary line Q2 between the second area A2 and the second corner area A32 and the selected side surface 1cc is, that is, the size of the second corner area A32 in the first direction X, wherein the distance D4 between the boundary line Q2 between the second area A2 and the second corner area A32 and the selected side surface 1cc can be 15μm, 20μm or 25μm.

[0103] 7 , a distance D3 between a boundary line Q1 between the first area A1 and the first corner area A31 and the selected side surface 1cc is 15 μm to 25 μm, and a distance D4 between a boundary line Q2 between the second area A2 and the second corner area A32 and the selected side surface 1cc is 15 μm to 25 μm.

[0104] Exemplarily, the specific description of the distance D3 between the boundary line Q1 between the first zone A1 and the first corner zone A31 and the selected side surface 1cc and the distance D4 between the boundary line Q2 between the second zone A2 and the second corner zone A32 and the selected side surface 1cc refers to the above introduction, and the dimensions of the first corner zone A31 and the second corner zone A32 in the second direction Y are not limited here. For example, the dimensions of the first corner zone A31 and the second corner zone A32 in the second direction Y are both in the range of 15μm to 25μm, and can specifically be 15μm, 20μm or 25μm.

[0105] The above-mentioned dimensions D3~D6 need to ensure that the first corner area of ​​the flexible film wraps the boundary edges of the first surface of the substrate and the selected side surface, and ensure that the second corner area of ​​the flexible film wraps the boundary edges of the second surface of the substrate and the selected side surface, and the above-mentioned dimensions D3~D6 are also related to the cutting accuracy of the substrate. In the preparation process of the drive substrate, the flexible film is laid as a whole on the initial substrate, and the initial substrate provides support to facilitate the preparation of metal layers, organic layers and inorganic layers on the flexible film. Before bending the flexible film, a part of the initial substrate needs to be cut off so that the bending area and the second area of ​​the flexible film are suspended. Exemplarily, the cutting accuracy of the substrate is ±15μm, and the above-mentioned dimensions D3~D6 are compatible with the cutting accuracy of ±15μm.

[0106] In some embodiments, as shown in Figure 8, the driving substrate 100 also includes a protective layer 10, which is located in the bending area A3, the portion of the first area A1 close to the bending area A3, and the portion of the second area A2 close to the bending area A3, and the protective layer 10 covers the connecting lead layer 9, the wiring layer 4 and the electrode layer 8.

[0107] Exemplarily, the material of the protective layer 10 is an inorganic material, such as silicon nitride or silicon oxide. As shown in FIG5 , the protective layer 10 covers the connecting lead layer 9, the wiring layer 4 and the electrode layer 8, and has a certain insulating effect. It can protect the multiple connecting leads 91 as well as the wiring layer 4 and the electrode layer 8, block water and oxygen, and protect the wiring layer 4 and the electrode layer 8 from water and oxygen corrosion, thereby extending the service life.

[0108] As shown in FIG. 9 , some embodiments of the present disclosure further provide a light emitting device 1000 , including the driving substrate 100 provided in any of the above embodiments. The light emitting device 1000 includes the above driving substrate 100 , a plurality of light emitting devices 20 and a driving circuit board 200 .

[0109] A plurality of light emitting devices 20 are located on the first surface 1a, and the plurality of light emitting devices 20 are electrically connected to the plurality of first electrodes 81. A driving circuit board 200 is located on the second surface 1b, and the driving circuit board 200 is electrically connected to the plurality of second electrodes 82. Exemplarily, the driving circuit board 200 may be directly electrically connected to the plurality of second electrodes 82 to be bound to the driving substrate 100. Alternatively, as shown in FIG. 9 , the driving circuit board 200 is electrically connected to the plurality of second electrodes 82 via a plurality of binding electrodes 85 and a plurality of second traces 42.

[0110] As shown in FIG1 , the driving substrate 100 further includes a plurality of binding electrodes 85 disposed on a side of the flexible film 2 away from the base substrate 1 , the plurality of binding electrodes 85 are electrically connected to the plurality of second electrodes 82 , and the plurality of binding electrodes 85 and the plurality of second electrodes 82 are both located in the electrode layer 8 , the plurality of binding electrodes 85 occupy a smaller area than the plurality of second electrodes 82 as a whole, and the size of each binding electrode 85 in the plurality of binding electrodes 85 is smaller than the size of each second electrode in the plurality of second electrodes 82 , and / or the spacing between two adjacent binding electrodes 85 in the plurality of binding electrodes 85 is smaller than the spacing between two adjacent second electrodes 82 in the plurality of second electrodes 82 , so that the display panel can be adapted and connected to the driving circuit board 200 with higher integration and smaller volume, so as to further reduce the volume of the display device. It can be understood that the driving circuit board 200 has a gold finger structure, and each gold finger structure is firmly electrically connected to its corresponding binding electrode 85 or second electrode 82 through materials such as conductive glue.

[0111] In some examples, illustratively, the connection relationship between the multiple light-emitting devices 20 and the wiring layer 4 is as follows: the portion of the wiring layer 4 located in the first area A1 includes a first wiring layer 4" and a second wiring layer 4', the second wiring layer 4' is electrically connected to the first wiring layer 4" through an opening that passes through the second insulating layer 7, the organic layer 6, and the first insulating layer 5, and the light-emitting device 20 is in direct contact with and electrically connected to the second wiring layer 4'. In other examples, the portion of the wiring layer 4 located in the first area A1 may also include only a layer of structure.

[0112] In some embodiments, as shown in FIG9 , the light emitting device 1000 further includes a first glue layer 12B disposed on a side of the light emitting device 20 away from the base substrate 1, and a second glue layer 12A disposed between adjacent light emitting devices 20. The color of the first glue layer 12B may be black, gray, etc., and is used to protect the light emitting device 20 and improve the display contrast of the light emitting device 20 in a scene with strong ambient light. However, it is understandable that the thickness of the first glue layer 12B should not be too large, so as to ensure that the light emitting device 20 emits normal display brightness; the color of the second glue layer 12A may be black, gray, green, or brown, and is used to prevent interference between the light emitting devices 20, thereby improving the display effect of the display screen. In some embodiments, the materials of the first glue layer 12B and the second glue layer 12A may be the same, and the first glue layer 12B and the second glue layer 12A may be disposed on a side of the light emitting device 20 away from the base substrate 1 by means of attachment and rolling.

[0113] As shown in Figure 9, the first area A1 of the driving substrate 100 includes a display area AA and a peripheral area BB located on at least one side of the display area AA. For example, the peripheral area BB is at least close to the bending area A3. In some embodiments, along the direction of the side surface 1c of the base substrate 1, the size L3 of the peripheral area BB can be less than 30μm. From the above introduction, it can be seen that when the driving substrate 100 is in a bent state, along the direction perpendicular to the side surface 1c of the base substrate 1, the distance between the peripheral area BB and the outermost edge of the driving substrate 100 is between 15μm and 25μm. It can be seen that the driving substrate 100 has a narrow frame and can meet the development requirements of narrow frame of the display device.

[0114] Exemplarily, the light-emitting device 1000 is a display device, for example, the display device may be a Mini LED (Mini Light Emitting Diode) display device, or the display device may be a Micro LED (Micro Light-Emitting Diode) display device.

[0115] In some examples, mini light-emitting diodes or micro light-emitting diodes are used as light-emitting devices. Compared with traditional LEDs, they occupy a smaller volume and have smaller particles. Within the same screen size, the light source density per unit area is higher and the unit size of the light source is smaller. Therefore, more precise local control of the light-emitting device can be achieved, which can ensure the uniformity of the display brightness and thus ensure the display quality of the display device.

[0116] The display device may be any device that displays an image, whether in motion (e.g., video) or stationary (e.g., still image), and whether textual or electronic. More specifically, it is contemplated that the embodiments described may be implemented in or associated with a variety of electronic devices, such as, but not limited to, mobile phones, wireless devices, personal digital assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controls and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images for a piece of jewelry), and the like.

[0117] Exemplarily, the light emitting device 1000 may also be used as a direct-type backlight source in a liquid crystal display device to provide light to a display panel on the light-emitting side thereof.

[0118] The embodiments of the present disclosure do not impose any special restrictions on the specific form of the above-mentioned light-emitting device 1000. The light-emitting device 1000 adopts the driving substrate 100 provided in the above-mentioned embodiments. Therefore, the light-emitting device 1000 provided in the present disclosure has all the beneficial effects of the driving substrate 100 provided in any of the above embodiments, which will not be repeated here.

[0119] Some embodiments of the present disclosure also provide a method for preparing a light emitting device, the method comprising:

[0120] S1. As shown in FIG. 10A , an initial base substrate 1 ′ is provided. The initial base substrate 1 ′ includes an initial first surface 1 a ′ and an initial second surface 1 b ′ opposite to each other. The initial base substrate 1 ′ includes a reserved area A4 and a to-be-removed area A5 .

[0121] Exemplarily, the initial substrate 1 ′ is a glass substrate or a silicon substrate.

[0122] S2. As shown in FIG10B , a flexible film 2 is formed on the initial first surface 1a' of the initial base substrate 1'; wherein the flexible film 2 includes a first area A1, a second area A2 and a bending area A3 located between the first area A1 and the second area A2, and the bending area includes a first corner area A31, a second corner area A32 and a side area A33 located between the first corner area A31 and the second corner area A32.

[0123] Exemplarily, the material of the flexible film 2 is polyimide, and the material of the flexible film 2 is coated on the initial first surface 1 a ′ of the initial base substrate 1 ′ by a coating process to form the flexible film 2 .

[0124] S3. As shown in FIG. 10C , a buffer layer 3 is formed on a side of the flexible film 2 away from the initial substrate 1 ′. The buffer layer 3 is located in the first area A1 , the second area A2 and the side area A33 .

[0125] Exemplarily, the material of the buffer layer 3 may be silicon nitride, silicon oxide or silicon oxynitride, and the above steps may be, for example, as follows: S31, forming an initial buffer layer on the side of the flexible film 2 away from the initial base substrate 1', for example, by using a deposition process to deposit the material of the buffer layer 3, and the initial buffer layer is located in the first area A1, the second area A2 and the bending area A3. S32, removing the portion of the initial buffer layer located in the first corner area A31 and the second corner area A32 to form the buffer layer 3. For example, by using an etching process, removing the portion of the initial buffer layer located in the first corner area A31 and the second corner area A32.

[0126] S4. As shown in FIG. 10D , a wiring layer 4 is formed on a side of the buffer layer 3 away from the initial substrate 1 ′. The wiring layer 4 is located in the first area A1 , the second area A2 and the side area A33 .

[0127] Exemplarily, the material of the routing layer 4 can be at least one of copper, molybdenum, titanium or aluminum. The material of the routing layer 4 is deposited in the first area A1, the second area A2 and the side area A33, and a set pattern is formed through a composition process. The routing layer 4 includes a plurality of first routing lines 41 arranged in the first area A1, a plurality of second routing lines 42 arranged in the second area A2, and a plurality of third routing lines 43 arranged in the side area A33.

[0128] It should be noted that the patterning process of the embodiment of the present disclosure includes thin film deposition, photoresist coating, mask exposure, development, etching and photoresist removal processes, etc.

[0129] S5. As shown in FIG. 10E , a first insulating layer 5 is formed on a side of the routing layer 4 away from the flexible film 2. The first insulating layer 5 is located in the first area A1, the side area A33 and the second area A2. The first insulating layer 5 includes a plurality of first vias, a plurality of second vias, a plurality of third vias and a plurality of fourth vias.

[0130] Exemplarily, the material of the first insulating layer 5 can be silicon nitride, silicon oxide or silicon oxynitride. For example, a deposition process is used to deposit the material of the first insulating layer 5 in the first area A1, the side area A33 and the second area A2, and an etching process is used to form a plurality of first vias, a plurality of second vias, a plurality of third vias and a plurality of fourth vias in the first insulating layer 5. Each first via exposes the surface of a first routing line 41, each second via exposes the surface of a second routing line 42, and each third via and each fourth via expose the surface of a third routing line 43.

[0131] S6. As shown in FIG10F , an electrode layer 8 is formed on a side of the first insulating layer 5 away from the initial substrate 1 ', the electrode layer 8 includes a plurality of first electrodes 81 located in the first area A1, a plurality of second electrodes 82 located in the second area A2, a plurality of third electrodes 83 located in the side area A33 and close to the first corner area A31, and a plurality of fourth electrodes 83 located in the side area A33 and close to the second corner area A32, each third electrode 83 is electrically connected to a fourth electrode 84 through a wiring layer 4.

[0132] Exemplarily, the material of the electrode layer 8 can be at least one of copper, molybdenum, titanium or aluminum. The material of the electrode layer 8 is sputtered on the surface of the first insulating layer 5 by a sputtering process, and a plurality of first electrodes 81, a plurality of second electrodes 82, a plurality of third electrodes 83 and a plurality of fourth electrodes are formed by a composition process, so that the first electrode 81 is electrically connected to the portion of the wiring layer 4 located in the first area A1 (the first wiring 41) through a first via hole penetrating the first insulating layer 5, the second electrode 82 is electrically connected to the portion of the wiring layer 4 located in the second area A2 (the second wiring 42) through a second via hole penetrating the first insulating layer 5, and the third electrode 83 and the fourth electrode 84 are electrically connected to the portion of the wiring layer 4 located in the side area A33 (the third wiring 43) through the third via hole and the fourth via hole penetrating the first insulating layer 5, respectively.

[0133] S7. As shown in FIG. 10G , an organic layer 6 is formed on a side of the electrode layer 8 away from the initial base substrate 1 ′. The organic layer 6 is located in the first area A1 and the second area A2 .

[0134] Exemplarily, the material of the organic layer 6 is a resin material, and a coating process is used to form the organic layer 6 on a side of the electrode layer 8 away from the initial base substrate 1 ′.

[0135] In some embodiments, the first area A1 of the driving substrate 100 includes a display area AA and a peripheral area BB, and the organic layer 6 is disposed in the display area AA.

[0136] S8. As shown in FIG. 10H , a second insulating layer 7 is formed on a side of the organic layer 6 away from the initial base substrate 1 ′. The second insulating layer 7 is located in the first area A1 and the second area A2 .

[0137] Exemplarily, the material of the second insulating layer 7 may be silicon nitride, silicon oxide or silicon oxynitride. For example, a deposition process is used to deposit the material of the first insulating layer 5 in the first area A1 and the second area A2 to form the second insulating layer 7 .

[0138] S9. As shown in FIG. 10I , the bending area A3 and the second area A2 of the flexible film 2 are peeled off, and a portion of the to-be-removed area A5 of the initial base substrate 1' is removed to form a base substrate 1; the base substrate 1 includes a first surface 1a and a second surface 1b relative to each other, and a plurality of side surfaces 1c connecting the first surface 1a and the second surface 1b, and at least one side surface of the plurality of side surfaces 1c is a selected side surface 1cc.

[0139] Exemplarily, a portion of the to-be-removed area A5 of the initial base substrate 1' is removed, and a portion of the retained area A4 is used as the base substrate 1. Exemplarily, the boundary line between the retained area A4 and the to-be-cut area A5 is located in the bending area A3 close to the first area A1, so that in subsequent steps, after the flexible film 2 is bent, the portion of the flexible film 2 located in the bending area A3 and the second area A2 is attached to the selected side surface 1cc and the second surface 1b of the base substrate 1.

[0140] In some examples, S9 includes:

[0141] S91 , peeling off at least a portion of the flexible film 2 corresponding to the to-be-removed area of ​​the initial base substrate 1 ′.

[0142] S92, using a cutting process to remove a portion of the to-be-removed area of ​​the initial substrate 1'.

[0143] As shown in FIG10I , the boundary line between the peeling area and the unpeeling area of ​​the flexible film 2 is closer to the display area AA than the boundary line between the reserved area A4 and the to-be-cut area A5 of the initial base substrate 1 '. Exemplarily, there is a first distance d1 between the boundary line between the peeling area and the unpeeling area of ​​the flexible film 2 and the display area AA, and there is a second distance d2 between the boundary line between the reserved area A4 and the to-be-cut area A5 of the initial base substrate 1 ' and the boundary line between the peeling area and the unpeeling area of ​​the flexible film 2. The values ​​of the first distance d1 and the second distance d2 depend on the accuracy of the peeling process and the cutting process. For example, the first distance d1 and the second distance d2 are both 30 μm, which can ensure smooth peeling of the flexible film 2 and cutting of the initial base substrate 1 '.

[0144] S10 , as shown in FIG. 10J , the flexible film 2 is bent so that the portion of the flexible film 2 located in the bending area A3 and the second area A2 is attached to the selected side surface 1 cc and the second surface 1 b of the base substrate 1 .

[0145] Specifically, the flexible film 2 is bent twice by 90° with the two edges of the base substrate 1 as the center, so that the portion of the flexible film 2 located in the bending area A3 and the second area A2 is attached to the selected side surface 1cc and the second surface 1b of the base substrate 1. The film layers stacked on the flexible film 2 also change accordingly with the bending position of the flexible film 2.

[0146] At this time, the portion of the driving substrate 100 located in the bending area A3 only includes the flexible film 2 with high bending performance, and does not form an electrical connection between the first area A1 and the second area A2, so that the bending effect can be guaranteed during the bending process, and there will be no film breakage or cracks. The first electrode 81 and the second electrode 82 are respectively located on the first surface 1a and the second surface 1b of the base substrate 1.

[0147] S11. As shown in FIG10K , a connecting lead layer 9 is formed on a side of the flexible film 2 away from the base substrate 1; the connecting lead layer 9 includes a plurality of first connecting leads 91 and a plurality of second connecting leads 92, each of the first connecting leads 91 and each of the second connecting leads 92 are respectively located in the first corner area A31 and the second corner area A32, and both ends of each first connecting lead 91 extend to the first area A1 and the side area A33, and both ends of each second connecting lead 92 extend to the second area A2 and the side area A33; each first connecting lead 91 is electrically connected to a first electrode 81 among the plurality of first electrodes 81, and a third electrode 83 among the plurality of third electrodes 83; each second connecting lead 92 is electrically connected to a second electrode 82 among the plurality of second electrodes 82, and a fourth electrode 84 among the plurality of fourth electrodes 84.

[0148] Exemplarily, the method of forming the connecting lead layer 9 is, for example, to adopt a three-dimensional printing process to print a plurality of first connecting leads 91 and a plurality of second connecting leads 92 respectively. In the process of forming the connecting lead layer 9, only two printing processes are needed to realize the transmission of electrical signals between the first area A1 and the second area A2. Compared with the existing method of printing connecting leads, it can reduce one printing process and improve printing efficiency.

[0149] S12 . As shown in FIG. 10L , a protective layer 10 is formed, wherein the protective layer 10 covers the connecting lead layer 9 , the routing layer 4 and the electrode layer 8 .

[0150] As shown in FIG10L , the protective layer 10 is disposed on the side of the connecting lead layer 9 away from the base substrate 1. The protective layer 10 covers the multiple first connecting leads 91 and the multiple second connecting leads 92, and can play a certain protective role for the multiple first connecting leads 91 and the multiple second connecting leads 92, blocking water and oxygen, preventing the multiple first connecting leads 91 and the multiple second connecting leads 92 from being corroded by water and oxygen, and extending the service life.

[0151] It should be noted that the plurality of first connecting leads 91 at least partially overlap with the first electrode 81 and the third electrode 83 of the electrode layer 8, that is, it is sufficient to ensure that the plurality of first connecting leads 91 can achieve electrical conduction between the first electrode 81 and the third electrode 83. Continuing with reference to FIG. 10L , the plurality of first connecting leads 91 partially overlap with the first electrode 81 and the third electrode 83 of the electrode layer 8, that is, before the formation of the protective layer 10, the first electrode 81 and the third electrode 83 are partially exposed on the surface of the side away from the base substrate 1. Similarly, the second electrode 82 and the fourth electrode 84 are also partially exposed on the surface of the side away from the base substrate 1. Therefore, providing the protective layer 10 to cover the electrode layer 8 can protect the first electrode 81, the second electrode 82, the third electrode 83 and the fourth electrode 84 to a certain extent, thereby avoiding corrosion by water and oxygen and extending the service life.

[0152] Continuing with reference to FIG. 10L , the routing layer 4 includes a first routing 41 located in the first area A1, a second routing 42 in the second area A2, and a third routing 43 in the side area A33, wherein the third routing 43 of the routing layer 4 is used to realize the transmission of electrical signals between the third electrode 83 and the third electrode 84 before the protective layer 10 is formed, and the third routing 43 is also in an exposed state, therefore, after the protective layer 10 is provided, it can be covered to avoid corrosion by water and oxygen, thereby extending its service life and thereby improving the overall performance of the drive substrate 100.

[0153] Exemplarily, the protective layer material may be prepared by a printing process, a pad printing process, a deposition process, etc., so as to form a protective layer 10 on the side of the connecting lead layer 9 , the wiring layer 4 , and the electrode layer 8 away from the base substrate 1 .

[0154] In some embodiments, referring to FIG. 9 , the method for preparing the light emitting device further includes:

[0155] S13 , disposing a plurality of light emitting devices 20 in the first area A1 of the driving substrate.

[0156] Exemplarily, the light-emitting device 20 is electrically connected to the portion (plurality of first wirings 41) of the wiring layer 4 located in the first area A1. For example, as shown in FIG9 , the portion of the wiring layer 4 located in the first area A1 includes a first wiring layer 4″ and a second wiring layer 4′, and the second wiring layer 4′ is electrically connected to the first wiring layer 4″ through an opening penetrating the second insulating layer 7, the organic layer 6, and the first insulating layer 5, and the light-emitting device 20 is in direct contact with and electrically connected to the second wiring layer 4′.

[0157] S14 , forming a first glue layer 12B on a side of the light emitting device 20 away from the base substrate 1 , and forming a second glue layer 12A on a side wall of the light emitting device 20 .

[0158] Exemplarily, a coating process is adopted to coat the second glue layer 12A between two adjacent light emitting devices 20 , and to coat the first glue layer 12B on a side of the light emitting device 20 away from the base substrate 1 .

[0159] S15 , binding the driving circuit board 200 in the second area A2 .

[0160] Exemplarily, the driving circuit board 200 is electrically connected to the plurality of binding electrodes 85, and then electrically connected to the plurality of second electrodes 82 through the portion of the wiring layer 4 (the first wiring layer 4") located in the second area A2 (the plurality of second wirings 42), thereby achieving binding of the driving circuit board 200.

[0161] It should be noted that the above S13, S14 and S15 do not necessarily represent a continuation relationship with steps S1 to S12. Two examples of the overall preparation process of the light-emitting device are provided below.

[0162] In some embodiments, the entire preparation process of the light-emitting device is as follows: after S8 and before S9, steps S13 and S14 are performed, and then steps S9 to S12 are performed, and finally S15 is completed. That is, after the flexible film 2, the flexible film 2, the buffer layer 3, the wiring layer 4, the first insulating layer 5, the organic layer 6 and the second insulating layer 7 are formed on the initial base substrate 1', the plurality of light-emitting devices 20 are transferred to the side of the second insulating layer 7 away from the initial base substrate 1', the light-emitting devices 20 are electrically connected to the portion of the wiring layer 4 located in the first area A1, and the first adhesive layer 12B and the second adhesive layer 12A are formed. The above steps are all performed in the non-bending state of the driving substrate. Then the initial base substrate 1' is cut to obtain the base substrate 1, the flexible film 2 is bent, the connecting lead layer 9 and the protective layer 10 are prepared, and finally the binding of the driving circuit board 200 is completed.

[0163] In some other embodiments, the entire preparation process of the light-emitting device is: S1 to S15, that is, after forming a flexible film 2, a flexible film 2, a buffer layer 3, a wiring layer 4, a first insulating layer 5, an organic layer 6 and a second insulating layer 7 on an initial base substrate 1', the initial base substrate 1' is cut to obtain a base substrate 1, the flexible film 2 is bent to make the driving substrate in a bent state, a connecting lead layer 9 and a protective layer 10 are prepared, a plurality of light-emitting devices 20 are transferred to a side of the second insulating layer 7 away from the initial base substrate 1', the light-emitting device 20 is electrically connected to a portion of the wiring layer 4 located in the first area A1, and a first adhesive layer 12B and a second adhesive layer 12A are formed, and finally the binding of the driving circuit board 200 is completed.

[0164] In the preparation method of the light-emitting device provided in the present disclosure, the flexible film 2 is first bent, and then the connecting lead layer 9 is formed on the side of the electrode layer 8 away from the base substrate 1, that is, before the flexible film 2 is bent, no metal wiring is set in the first corner area A31 and the second corner area A32, and the connecting lead layer 9 is formed after bending. In this way, the problem of increased stress and fracture of the connecting leads on the surface of the flexible film 2 during the bending of the flexible film 2 in the related art is avoided. Without increasing the difficulty of the process, the connection stability of multiple connecting leads is guaranteed. In addition, before bending, the third electrode 83 and the fourth electrode 84 are simultaneously set on the electrode layer 8, and the third wiring 43 is set in the side area A33 to realize the electrical connection between the third electrode 83 and the fourth electrode 84. In the subsequent preparation of the connecting lead layer 9, the process can be further simplified, the stability of signal transmission is guaranteed, and the reliability of the driving substrate 100 is enhanced.

[0165] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

A driving substrate, comprising: a substrate baseplate, comprising an opposing first surface, a second surface, and a plurality of side surfaces, at least one of the plurality of side surfaces being a selected side surface; A flexible film is arranged on the first surface, the selected side surface, and a portion of the second surface close to the selected side surface; wherein the flexible film includes a first area located on the first surface, a second area located on the second surface, and a bending area located between the first area and the second area, and the bending area includes a first corner area, a second corner area, and a side area connecting the first corner area and the second corner area; a wiring layer, an electrode layer, and a connecting lead layer are sequentially arranged on a side of the flexible film away from the substrate; wherein the wiring layer is located in the first area, the second area, and the side area; the electrode layer includes a plurality of first electrodes located in the first area, a plurality of first electrodes located in the second area, and a plurality of first electrodes located in the second area. A plurality of second electrodes in the area, a plurality of third electrodes located in the side area and close to the first corner area, a plurality of fourth electrodes located in the side area and close to the second corner area, each third electrode is electrically connected to a fourth electrode through the routing layer; the connecting lead layer includes a plurality of first connecting leads and a plurality of second connecting leads; the plurality of first connecting leads are located in the first corner area, and both ends extend to the first area and the side area, and each first connecting lead connects a first electrode and a third electrode; the plurality of second connecting leads are located on the second corner area, and both ends extend to the second area and the side area, and each second connecting lead connects a second electrode and a fourth electrode. The drive substrate according to claim 1, wherein: The drive substrate further includes at least one inorganic layer and / or at least one organic layer arranged on a side of the flexible film away from the base substrate, the inorganic layer is located in the first area, the second area and the side area, and the organic layer is located in the first area and the second area; the connecting lead layer is in contact with the flexible film. The drive substrate according to claim 1 or 2, wherein: The thickness of the connecting lead layer is 2 μm to 5 μm. The drive substrate according to claim 1, wherein: The widths of the plurality of first connection leads are substantially equal, and the widths of the plurality of second connection leads are substantially equal. The drive substrate according to any one of claims 2 to 4, wherein: The driving substrate comprises an organic layer, and the organic layer is arranged on a side of the electrode layer away from the base substrate. The drive substrate according to claim 5, wherein: The drive substrate also includes at least one inorganic layer, and the at least one inorganic layer includes: a buffer layer arranged between the flexible film and the wiring layer, the buffer layer is located in the first area, the side area and the second area; a first insulating layer arranged between the wiring layer and the electrode layer, the first insulating layer is located in the first area, the side area and the second area; the first electrode is electrically connected to the portion of the wiring layer located in the first area through a first via hole penetrating the first insulating layer, the second electrode is electrically connected to the portion of the wiring layer located in the second area through a second via hole penetrating the first insulating layer, the third electrode and the fourth electrode are electrically connected to the portion of the wiring layer located in the side area through a third via hole and a fourth via hole penetrating the first insulating layer respectively; a second insulating layer is arranged on a side of the organic layer away from the base substrate, the second insulating layer is located in the first area and the second area. The drive substrate according to claim 1, wherein: The routing layer includes a plurality of first routing lines arranged in the first area, a plurality of second routing lines arranged in the second area, and a plurality of third routing lines arranged in the side area, and each of the third routing lines is electrically connected to a third electrode among the plurality of third electrodes and a fourth electrode among the plurality of fourth electrodes. The drive substrate according to claim 1, wherein: The size of the first electrode along its extension direction ranges from 50 μm to 100 μm. The drive substrate according to claim 1, wherein: The sizes of the third electrode and the fourth electrode along their respective extension directions are both in the range of 30 μm to 50 μm. The drive substrate according to claim 1, wherein: The distance between the boundary line between the first region and the first corner region and the selected side surface is 15 μm to 25 μm; and / or the distance between the boundary line between the second region and the second corner region and the selected side surface is 15 μm to 25 μm. The drive substrate according to claim 1, wherein: It also includes a protective layer located in the bending area, a portion of the first area close to the bending area, and a portion of the second area close to the bending area, and the protective layer covers the connecting lead layer, the routing layer, and the electrode layer. A light emitting device, comprising: The driving substrate according to any one of claims 1 to 11; a plurality of light emitting devices located on the first surface, the plurality of light emitting devices being electrically connected to the plurality of first electrodes; A driving circuit board is located on the second surface, and the driving circuit board is electrically connected to the plurality of second electrodes. A method for preparing a light-emitting device, comprising: providing an initial substrate substrate, the initial substrate substrate comprising opposing initial first and second surfaces; The initial substrate substrate comprises a reserved area and an area to be removed; a flexible film is formed on the initial first surface of the initial substrate substrate; wherein the flexible film comprises a first area, a second area and a bending area between the first area and the second area, and the bending area comprises a first corner area, a second corner area and a side area between the first corner area and the second corner area; a routing layer is formed on a side of the flexible film away from the initial substrate substrate, and the routing layer is located in the first area, the second area and the side area; an electrode layer is formed on a side of the routing layer away from the initial substrate substrate, and the electrode layer comprises a plurality of first electrodes located in the first area, a plurality of second electrodes located in the second area, a plurality of third electrodes located in the side area and close to the first corner area, and a plurality of fourth electrodes located in the side area and close to the second corner area, and each third electrode is electrically connected to a fourth electrode through the routing layer; the bending area and the second area of ​​the flexible film are peeled off, and the part of the area to be removed of the initial substrate substrate is removed to form a substrate substrate; the substrate substrate The invention comprises a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, wherein at least one side surface of the plurality of side surfaces is a selected side surface; the flexible film is bent so that the portion of the flexible film located in the bending area and the second area is attached to the selected side surface and the second surface of the base substrate; a connecting lead layer is formed on the side of the flexible film away from the base substrate; the connecting lead layer comprises a plurality of first connecting leads and a plurality of second connecting leads, each of the first connecting leads and each of the second connecting leads are located in the first corner area and the second corner area respectively, and both ends of each of the first connecting leads extend to the first area and the side area, and both ends of each of the second connecting leads extend to the second area and the side area; each of the first connecting leads is electrically connected to a first electrode among the plurality of first electrodes, and a third electrode among the plurality of third electrodes; each of the second connecting leads is electrically connected to a second electrode among the plurality of second electrodes, and a fourth electrode among the plurality of fourth electrodes. The method for preparing a light-emitting device according to claim 13, wherein: The method for preparing the light-emitting device further comprises: after forming the flexible film on the first surface of the initial substrate substrate and before forming the wiring layer on the side of the flexible film away from the initial substrate substrate, comprising: forming a buffer layer on the side of the flexible film away from the initial substrate substrate, wherein the buffer layer is located in the first area, the side area and the second area; after forming the wiring layer on the side of the flexible film away from the initial substrate substrate, comprising: forming a first insulating layer on the side of the wiring layer away from the flexible film, wherein the first insulating layer is located in the first area, the side area and the second area, wherein the first insulating layer comprises a plurality of first via holes, a plurality of second via holes, a plurality of third via holes and a plurality of fourth via holes; forming the electrode layer on the side of the wiring layer away from the initial substrate substrate, comprising: forming a first insulating layer on the side of the wiring layer away from the initial substrate substrate, wherein the first insulating layer is located in the first area, the side area and the second area, wherein the first insulating layer comprises a plurality of first via holes, a plurality of second via holes, a plurality of third via holes and a plurality of fourth via holes; A plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes and a plurality of fourth electrodes are formed on one side of the board, so that the first electrode is electrically connected to the portion of the wiring layer located in the first area by penetrating the first via hole, the second electrode is electrically connected to the portion of the wiring layer located in the second area by penetrating the second via hole, and the third electrode and the fourth electrode are electrically connected to the portion of the wiring layer located in the side area by respectively penetrating the third via hole and the fourth via hole of the first insulating layer; after the electrode layer is formed on the side of the wiring layer away from the initial substrate, the further comprising: forming an organic layer on the side of the electrode layer away from the initial substrate, the organic layer being located in the first area and the second area; forming a second insulating layer on the side of the organic layer away from the initial substrate, the second insulating layer being located in the first area and the second area. The method for preparing a light-emitting device according to claim 13, wherein: The forming of the connection lead layer on the side of the flexible film away from the base substrate comprises: using a three-dimensional printing process to print the plurality of first connection leads and the plurality of second connection leads respectively. The method for preparing a light-emitting device according to any one of claims 13 to 15, wherein: Also includes: After forming the connection lead layer, a protection layer is formed on the connection lead layer, the routing layer and the electrode layer.

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