Continuous synthesis device and method based on silicon carbide powder

Abstract

The invention provides a continuous synthesis device and method based on silicon carbide powder, and belongs to the technical field of silicon carbide synthesis equipment, and the continuous synthesis device based on the silicon carbide powder comprises a reaction furnace, a sealing structure and a conveying assembly. The reaction furnace is provided with a plurality of bins which are sequentially arranged in the horizontal direction, and a communication opening is formed between any two adjacent bins. The bins are set to be a feeding bin, a vacuum bin, a first transition bin, a first reaction bin, a second transition bin, a second reaction bin, a third transition bin, a cooling bin and a discharging bin in sequence. The multiple sealing structures correspond to the communicating openings in a one-to-one mode. The multiple conveying assemblies are arranged at the bottoms of the bins one by one and can convey the crucibles containing the carbon-silicon mixture. According to the continuous synthesis device based on the silicon carbide powder, the crucible can be continuously loaded into the feeding bin, the continuous synthesis action of the silicon carbide powder is achieved, the yield is increased, the production efficiency is improved, and the practicability is high.

Description

Technical Field

[0001] The invention belongs to the technical field of silicon carbide synthesis equipment, and in particular relates to a continuous synthesis device and method based on silicon carbide powder. Background Art

[0002] Silicon carbide is an important compound semiconductor material with many unique physical and chemical properties. It is widely used in electronics, optics, machinery, aerospace and other fields.

[0003] In the existing technology, with the gradual maturity and industrialization of silicon carbide crystal growth technology, industrial production generally adopts the improved self-propagating method to synthesize silicon carbide powder. This production method has a low single feed amount and cannot produce continuously. The low output of high-purity silicon carbide powder has gradually become an obstacle to the industrialization of silicon carbide, and it is difficult to meet the needs of rapid expansion of the industry. Summary of the invention

[0004] The embodiment of the present invention provides a continuous synthesis device and method based on silicon carbide powder, aiming to solve the problem of poor practicality of existing silicon carbide due to the inability to achieve continuous synthesis and low output.

[0005] To achieve the above object, the technical solution adopted by the present invention is: to provide a continuous synthesis device based on silicon carbide powder, comprising: The reaction furnace has a plurality of chambers arranged in sequence along the horizontal direction, and a connecting port is provided between any two adjacent chambers; the chambers are set to be a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber, and a discharge chamber in sequence; A plurality of sealing structures are provided, each of the sealing structures corresponding to each of the communication ports; There are multiple conveying assemblies, each of which is arranged at the bottom of each chamber and is used to convey the crucible containing the carbon-silicon mixture.

[0006] In a possible implementation, each of the sealing structures includes a door slidably disposed on the reaction furnace along a vertical direction.

[0007] In a possible implementation, the reaction furnace is provided with a plurality of sealing doors corresponding to each of the chambers.

[0008] In a possible implementation, the arrangement direction of each of the chambers is set as a first direction, and a horizontal direction perpendicular to the first direction is set as a second direction; each of the conveying components includes: A plurality of first rotating shafts are provided, each of which is parallel and spaced apart along the first direction, and each of which is arranged at one side of the reaction furnace along the second direction; each of the first rotating shafts is rotatably disposed on the reaction furnace, and one end of each first rotating shaft extends into the corresponding chamber; the outer end of each first rotating shaft is dynamically connected to a first driving component; A plurality of second rotating shafts are provided, each of the first rotating shafts is arranged along the second direction at the other side of the reactor, and each of the second rotating shafts corresponds coaxially to each of the first rotating shafts; the outer end of the second rotating shaft arranged near one side of the feeding bin is dynamically connected to a second driving component; The rotating drum is located in the corresponding chamber, and two ends thereof are rotatably connected to the corresponding first rotating shaft and the second rotating shaft through one-way bearings.

[0009] In a possible implementation, the rotating drum is made of high temperature resistant ceramic material.

[0010] In a possible implementation, the height at which the top end of each rotating drum is located is higher than the height at which the bottom end of each communicating port is located.

[0011] In a possible implementation, the first driving component includes: a first driver, in dynamic connection with one of the first rotating shafts; The chain transmission structure is provided with a plurality of groups, and any two adjacent first rotating shafts are dynamically connected via a group of the chain transmission structures.

[0012] In a possible implementation manner, the second driving component includes a second driver.

[0013] The present invention also provides a continuous synthesis method based on silicon carbide powder, using the above-mentioned continuous synthesis device based on silicon carbide powder; the continuous synthesis method based on silicon carbide powder comprises the following steps: Feeding and preheating: placing the crucible containing the carbon-silicon mixture into the feeding bin, and conveying the crucible containing the carbon-silicon mixture into the vacuum bin through the conveying assembly, and preheating; The front-end material is transferred and reacted, the internal environment of the first transition chamber is adjusted to be consistent with the vacuum chamber, and the sealing structure between the vacuum chamber and the first transition chamber is opened, and the crucible containing the carbon-silicon mixture is sent to the first transition chamber through the conveying component; then the internal environment of the first transition chamber is changed to be consistent with the first reaction chamber, and after the sealing structure between the first transition chamber and the first reaction chamber is opened, the crucible containing the carbon-silicon mixture is sent to the first reaction chamber through the conveying component; The rear-end material transition transfer and reaction, adjust the internal environment of the second transition chamber to be consistent with that of the first reaction chamber, open the sealing structure between the second transition chamber and the first reaction chamber, and send the crucible containing the carbon-silicon mixture to the second transition chamber through the conveying assembly; then change the internal environment of the second transition chamber to be consistent with that of the second reaction chamber, open the sealing structure between the second transition chamber and the second reaction chamber, and send the crucible containing the carbon-silicon mixture to the second reaction chamber through the conveying assembly; Cool the material and adjust the internal environment of the third transition bin to be consistent with that of the second reaction bin, open the sealing structure between the third transition bin and the second reaction bin, and send the crucible containing the carbon-silicon mixture to the third transition bin through the conveying assembly; then change the internal environment of the third transition bin to be consistent with that of the cooling bin, open the sealing structure between the cooling bin and the third transition bin, and send the crucible containing the carbon-silicon mixture to the cooling bin through the conveying assembly; then transfer it to the storage bin.

[0014] In the continuous synthesis device based on silicon carbide powder provided by the present implementation, the chambers arranged in the reaction furnace sequentially form a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber and a discharging chamber, and the chambers are connected and disconnected by a sealing structure, thereby ensuring the effective operation of each chamber. At the same time, it can also ensure that the conveying component can convey the crucible containing the carbon-silicon mixture, and then the crucible can be continuously loaded into the feeding chamber, so as to realize continuous synthesis of silicon carbide powder, increase the output, and improve the production efficiency, and it is highly practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic structural diagram of a continuous synthesis device based on silicon carbide powder provided in an embodiment of the present invention; Figure 2 A schematic diagram of the enlarged structure of the continuous synthesis device based on silicon carbide powder provided in an embodiment of the present invention; Figure 3 A schematic diagram of the structure of a conveying assembly of a continuous synthesis device based on silicon carbide powder provided in an embodiment of the present invention; Figure 4 A flow chart of a continuous synthesis method based on silicon carbide powder provided in an embodiment of the present invention; Description of reference numerals: 10. Reactor; 11. Feeding bin; 12. Vacuum bin; 13. First transition bin; 14. First reaction bin; 15. Second transition bin; 16. Second reaction bin; 17. Third transition bin; 18. Cooling bin; 19. Discharging bin; 20. Sealing structure; 21. Door; 22. Telescopic structure; 30. Conveying assembly; 31. First rotating shaft; 32. Second rotating shaft; 33. Rotating drum; 34. One-way bearing; 35. First driving component; 351. First driver; 352. Chain transmission structure; 36. Second driver; 40. Seal the door. DETAILED DESCRIPTION

[0016] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0017] Please also read Figure 1 and Figure 2 , the continuous synthesis device based on silicon carbide powder provided by the present invention is now described. The continuous synthesis device based on silicon carbide powder comprises a reactor 10, a sealing structure 20 and a conveying assembly 30. The reactor 10 has a plurality of chambers arranged in sequence along the horizontal direction, and a connecting port is provided between any two adjacent chambers. The chambers are set to be a feeding bin 11, a vacuum bin 12, a first transition bin 13, a first reaction bin 14, a second transition bin 15, a second reaction bin 16, a third transition bin 17, a cooling bin 18 and a discharging bin 19 in sequence. There are a plurality of sealing structures 20, and each sealing structure 20 corresponds to each connecting port one by one. There are a plurality of conveying assemblies 30, and each conveying assembly 30 is arranged one by one at the bottom of each chamber, so as to transport the crucible containing the carbon-silicon mixture.

[0018] Compared with the prior art, the continuous synthesis device based on silicon carbide powder provided in this embodiment has the following chambers arranged in the reactor 10, which sequentially form a feeding chamber 11, a vacuum chamber 12, a first transition chamber 13, a first reaction chamber 14, a second transition chamber 15, a second reaction chamber 16, a third transition chamber 17, a cooling chamber 18 and a discharging chamber 19, and the chambers are connected and disconnected by a sealing structure 20, thereby ensuring the effective operation of each chamber. At the same time, it can also ensure that the conveying component 30 can convey the crucible containing the carbon-silicon mixture, and then the crucible can be continuously loaded into the feeding chamber 11, so as to realize the continuous synthesis of silicon carbide powder, increase the output, and improve the production efficiency, and have strong practicality.

[0019] In this embodiment, each chamber is arranged horizontally, which can reduce the work done by each conveying assembly 30. In addition, each chamber is provided with a temperature control module, a pressure control module and a gas control module, etc., to ensure that the internal environment such as the temperature, pressure and atmosphere type in the chamber is regulated. This technology is a prior art and is well known to those skilled in the art, and will not be described in detail here.

[0020] The crucible can be continuously loaded into the feeding bin 11 to realize continuous powder synthesis, thereby realizing continuous synthesis of silicon carbide powder and improving production efficiency.

[0021] In some embodiments, the sealing structure 20 may be configured as follows: Figure 2 See the structure shown. Figure 2 Each sealing structure 20 includes a door 21 slidably arranged on the reaction furnace 10 along the vertical direction. The door 21 can control the connection between two adjacent chambers. When connected, the crucible containing the carbon-silicon mixture can pass through, and when disconnected, it can ensure that the two adjacent chambers do not interfere with each other.

[0022] In this embodiment, a communication port is provided on the side wall between two adjacent chambers, and the communication port may be a rectangular port. Correspondingly, a sliding cavity with an open top is provided in the side wall, and the chamber door 21 may be slidably connected to the sliding cavity. At the same time, in order to ensure the automatic opening and closing of the chamber door 21, the sealing structure 20 may also include a telescopic structure 22, which is fixed on the reaction furnace 10 and connected to the chamber door 21 to drive the chamber door 21 to rise and fall and slide. There may be a plurality of telescopic structures 22, which are respectively distributed on both sides of the reaction furnace 10 in a direction perpendicular to the spacing direction of each chamber, and the telescopic structure 22 may be a hydraulic cylinder.

[0023] In some embodiments, the reactor 10 may be Figure 1 See the structure shown. Figure 1 The reaction furnace 10 is provided with a plurality of sealing doors 40 corresponding to each chamber one by one, and the sealing doors 40 can ensure that each chamber can be opened, thereby ensuring the maintenance of each chamber.

[0024] It should be noted that the sealing doors 40 corresponding to the feeding bin 11 and the discharging bin 19 can be hinged to facilitate opening and closing, thereby facilitating feeding and discharging. The sealing doors 40 corresponding to other bins can be bolted.

[0025] In some embodiments, the above-mentioned chambers can be used as follows Figure 1 See the structure shown. Figure 1 The lengths of the first transition bin 13, the second transition bin 15 and the third transition bin 17 are all smaller than the lengths of the first reaction bin 14, the second reaction bin 16 and the cooling bin 18. The residence time of the first reaction bin 14, the second reaction bin 16 and the cooling bin 18 is relatively long. This structure can ensure continuous feeding and thus ensure continuous transfer production.

[0026] In some embodiments, the conveying assembly 30 may be configured as follows: Figure 3 See the structure shown. Figure 3, the arrangement direction of each chamber is set as the first direction, and the horizontal direction perpendicular to the first direction is set as the second direction. Each conveying assembly 30 includes a first rotating shaft 31, a second rotating shaft 32, a first driving component 35, a second driving component and a rotating drum 33. There are multiple first rotating shafts 31, each of which is parallel and spaced along the first direction, and each of which is arranged on one side of the reaction furnace 10 along the second direction. Each first rotating shaft 31 is rotatably arranged on the reaction furnace 10, and one end extends into the corresponding chamber. The outer end of each first rotating shaft 31 is dynamically connected to the first driving component 35. There are multiple second rotating shafts 32, each of which is arranged on the other side of the reaction furnace 10 along the second direction, and each second rotating shaft 32 corresponds to each first rotating shaft 31 one by one. The outer end of the second rotating shaft 32 arranged near one side of the feeding bin 11 is dynamically connected to the second driving component. The rotating drum 33 is located in the corresponding chamber, and the two ends are rotatably connected to the corresponding first rotating shaft 31 and the second rotating shaft 32 through a one-way bearing 34.

[0027] At least one crucible can be placed in each chamber, and the residence time of the crucible in each chamber is different. Therefore, when the crucible is transferred from the chamber with a short residence time to the chamber with a long residence time, the first driving component 35 can first drive the first rotating shaft 31 to rotate, and then the rotating drum 33 can be rotated, so that each crucible in the chamber is transmitted forward, and the position of the entrance (the connecting port with the previous chamber) is reserved. Then the sealing structure 20 is opened, and the conveying structure in the previous chamber conveys the crucible forward and passes through the entrance of the chamber. The rotating drum 33 is connected to the first rotating shaft 31 and the second rotating shaft 32 by a one-way bearing 34, and the rotating drum 33 can rotate forward after receiving the crucible to ensure the transmission of the crucible. When the crucible is separated from the conveying component 30 in the previous chamber, the second driving component in the chamber is opened, and the corresponding rotating drum 33 is driven to rotate through the second rotating shaft 32 at the entrance of the chamber, providing the crucible with power to transmit forward, so that the crucible in the previous chamber enters the chamber.

[0028] In addition, the one-way bearing 34 can also prevent the crucible in the previous chamber from colliding or falling over with the crucible in the chamber when the crucible in the previous chamber enters the chamber. The one-way bearing 34 can be made of high temperature resistant material.

[0029] Of course, it should be noted that, in the process of transferring the crucible from the chamber to the next chamber, the first driving component 35 is required to move the crucibles in the chamber at the same time.

[0030] In this embodiment, there is at least one second rotating shaft 32 connected to the second driving component. When the number of the connected second rotating shafts 32 is greater than or equal to two, a chain drive may be used.

[0031] In some embodiments, the drum 33 may be Figure 3 See the structure shown. Figure 3 The drum 33 is made of high temperature resistant ceramic material, which can effectively cope with high temperature environment and thus ensure the stability of transportation.

[0032] In some embodiments, the drum 33 may be Figure 2 See the structure shown. Figure 2 The height of the top of each rotating drum 33 is higher than the height of the bottom of each connecting port to avoid interference between the crucible and the bottom of the connecting port during the transfer of the crucible between the two chambers, thereby ensuring the stability of the crucible transportation.

[0033] In some embodiments, the first driving structure may be as follows: Figure 3 See the structure shown. Figure 3 The first driving structure includes a first driver 351 and a chain transmission structure 352. The first driver 351 is connected to one of the first rotating shafts 31. The chain transmission structure 352 is provided in multiple groups, and any two adjacent first rotating shafts 31 are connected to each other through a group of chain transmission structures 352.

[0034] The first driver 351 can be a stepper motor, or a combination of a drive motor and a reducer. A chain transmission structure 352 is provided between any two adjacent first rotating shafts 31, that is, a sprocket is connected to the two adjacent first rotating shafts 31, and the two adjacent first rotating shafts 31 are connected by a transmission chain. This structure can ensure the synchronous rotation of each first rotating shaft 31 and the stability of the transmission, thereby ensuring the stable transmission of the crucible.

[0035] In some embodiments, the second driver 36 may be implemented as follows: Figure 3 See the structure shown. Figure 3 , the second driving structure includes a second driver 36.

[0036] The second driver 36 may be a stepper motor, or a combination of a drive motor and a reducer.

[0037] Based on the same inventive concept, see Figure 4 The embodiment of the present application also provides a continuous synthesis method based on silicon carbide powder, using the above-mentioned continuous synthesis device based on silicon carbide powder.

[0038] The continuous synthesis method based on silicon carbide powder comprises the following steps: S100: feeding and preheating, placing the crucible filled with the carbon-silicon mixture into the feeding bin 11, and conveying the crucible filled with the carbon-silicon mixture into the vacuum bin 12 through the conveying assembly 30, and preheating.

[0039] S200: Front-end material transition transfer and reaction, adjust the internal environment of the first transition chamber 13 to be consistent with the vacuum chamber 12, open the sealing structure 20 between the vacuum chamber 12 and the first transition chamber 13, and send the crucible containing the carbon-silicon mixture to the first transition chamber 13 through the conveying assembly 30. Then, change the internal environment of the first transition chamber 13 to be consistent with the first reaction chamber 14, open the sealing structure 20 between the first transition chamber 13 and the first reaction chamber 14, and send the crucible containing the carbon-silicon mixture to the first reaction chamber 14 through the conveying assembly 30.

[0040] S300: Back-end material transition transfer and reaction, adjust the internal environment of the second transition chamber 15 to be consistent with that of the first reaction chamber 14, open the sealing structure 20 between the second transition chamber 15 and the first reaction chamber 14, and send the crucible containing the carbon-silicon mixture to the second transition chamber 15 through the conveying assembly 30. Then, change the internal environment of the second transition chamber 15 to be consistent with that of the second reaction chamber 16, open the sealing structure 20 between the second transition chamber 15 and the second reaction chamber 16, and send the crucible containing the carbon-silicon mixture to the second reaction chamber 16 through the conveying assembly 30.

[0041] S400: Cooling and discharging, adjusting the internal environment of the third transition chamber 17 to be consistent with the second reaction chamber 16, and opening the sealing structure 20 between the third transition chamber 17 and the second reaction chamber 16, and sending the crucible containing the carbon-silicon mixture to the third transition chamber 17 through the conveying assembly 30. Then, changing the internal environment of the third transition chamber 17 to be consistent with the cooling chamber 18, and opening the sealing structure 20 between the cooling chamber 18 and the third transition chamber 17, and sending the crucible containing the carbon-silicon mixture to the cooling chamber 18 through the conveying assembly 30. Then, transferring to the storage bin.

[0042] Compared with the prior art, the continuous synthesis method based on silicon carbide powder provided in this embodiment has the advantages that in the front-end material transition transfer and reaction step, the internal environment of the first transition chamber 13 can be adjusted to be the same as that of the vacuum chamber 12 or the first reaction chamber 14, thereby ensuring that the crucible of the vacuum chamber 12 is transferred to the first reaction chamber 14 without affecting or destroying the growth environment in the first reaction chamber 14. In the rear-end material transition transfer and reaction step, the internal environment of the second transition chamber 15 can be adjusted to be the same as that of the first reaction chamber 14 or the second reaction chamber 16, thereby ensuring that the crucible in the first reaction chamber 14 is transferred to the second reaction chamber 16, without affecting or destroying the growth environment in the first reaction chamber 14 and the second reaction chamber 16. In the cooling and discharging step, the internal environment of the third transition chamber 17 can be adjusted to be the same as that of the second reaction chamber 16 or the cooling chamber 18, thereby ensuring that the crucible in the second reaction chamber 16 is transferred to the cooling chamber 18, without affecting or destroying the growth environment in the second reaction chamber 16. The first reaction chamber is the high-pressure reaction stage of the material, with the pressure controlled at 30~60kPa and the temperature controlled at 1800~2000℃, so that the material can fully react; the second reaction chamber is the low-pressure recrystallization stage of the material, with the pressure controlled at 1~10kPa and the temperature controlled at 2000~2200℃, so that the material can form the required particles.

[0043] In addition, in this embodiment, regarding the vacuum chamber 12 and the cooling chamber 18, the main function of the vacuum chamber is to remove the air in the material, and the main function of the cooling chamber is to reduce the temperature.

[0044] As the specific implementation steps of this embodiment: First, all the sealing structures 20 and the sealing doors 40 are in a closed state.

[0045] The sealing door 40 corresponding to the feeding bin 11 is opened, the crucible containing the carbon-silicon mixture is placed in the feeding bin 11, and the sealing door 40 of the feeding bin 11 is closed. The feeding bin 11 is evacuated until the pressure reaches below 20 Pa, the sealing structure 20 between the feeding bin 11 and the vacuum bin 12 is opened, the crucible is sent into the vacuum bin 12 through the conveying assembly, and the sealing structure 20 between the feeding bin 11 and the vacuum bin 12 is closed. Subsequently, the vacuum bin 12 is preheated and vacuumed at the same time, with a preheating temperature of 300° C. and a vacuum time of 10 hours.

[0046] After the vacuum is completed, the first transition chamber 13 is evacuated to a vacuum and heated to a temperature of 300°C, the sealing structure 20 between the first transition chamber 13 and the vacuum chamber 12 is opened, the crucible is sent into the first transition chamber 13 through the conveying assembly 30, and the sealing structure between the first transition chamber 13 and the vacuum chamber 12 is closed. Then the first transition chamber 13 is adjusted until the atmosphere type, air pressure and temperature in the first transition chamber 13 reach the same as those in the first reaction chamber 14, the sealing structure 20 between the first transition chamber 13 and the first reaction chamber 14 is opened, the crucible is sent into the first reaction chamber 14 through the conveying assembly 30, and the sealing structure 20 between the first transition chamber 13 and the first reaction chamber 14 is closed. The first reaction chamber 14 is the first stage of the reaction, the pressure is controlled at 30000 kPa, the temperature is controlled at 1500°C, and the time is 15 hours.

[0047] After the first stage of reaction is completed, the second transition chamber 15 is adjusted to the same atmosphere type, pressure and temperature as the first reaction chamber 14, the sealing structure 20 between the first reaction chamber 14 and the second transition chamber 15 is opened, the crucible is sent into the second transition chamber 15, and the sealing structure 20 between the first reaction chamber 14 and the second transition chamber 15 is closed. Subsequently, the second transition chamber 15 is adjusted until the atmosphere type, air pressure and temperature in the second transition chamber 15 are the same as those in the second reaction chamber 16, the sealing structure 20 between the second transition chamber 15 and the second reaction chamber 16 is opened, the crucible is sent into the second reaction chamber 16, and the sealing structure 20 between the second transition chamber 15 and the second reaction chamber 16 is closed. The second reaction chamber 16 is the second stage of the reaction, the pressure is controlled at 2000 kPa, the temperature is controlled at 2200 ° C, and the time is 25 hours.

[0048] After the second stage reaction is finished, the atmosphere type, pressure and temperature of the third transition chamber 17 are controlled to be the same as those of the first reaction chamber 14, the sealing structure 20 between the third transition chamber 17 and the second reaction chamber 16 is opened, the crucible is sent into the third transition chamber 17, and the sealing structure 20 between the third transition chamber 17 and the second reaction chamber 16 is closed. Then the third transition chamber 17 is adjusted so that its atmosphere type and air pressure meet the requirements of the cooling chamber 18, the sealing structure 20 between the third transition chamber 17 and the cooling chamber 18 is opened, the crucible is sent into the cooling chamber 18, and the sealing structure 20 between the third transition chamber 17 and the cooling chamber 18 is closed. The cooling chamber 18 is the crucible cooling stage, and in order to achieve a better cooling effect, it can also be divided into multiple cooling chambers 18. Until the temperature reaches below 50°C.

[0049] After cooling is completed, the atmosphere type and pressure of the discharge bin 19 are controlled to be the same as those of the cooling bin 18, the sealing structure 20 between the discharge bin 19 and the cooling bin 18 is opened, and after the crucible is sent into the discharge bin 19, the sealing structure 20 between the discharge bin 19 and the cooling bin 18 is closed. Subsequently, the sealing door 40 of the discharge bin 19 is opened, the crucible is taken out, and the synthesis process is completed.

[0050] By repeating the above steps, continuous synthesis can be achieved.

[0051] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A continuous synthesis device based on silicon carbide powder, characterized in that: include: The reaction furnace has a plurality of chambers arranged in sequence along the horizontal direction, and a connecting port is provided between any two adjacent chambers; the chambers are set to be a feeding chamber, a vacuum chamber, a first transition chamber, a first reaction chamber, a second transition chamber, a second reaction chamber, a third transition chamber, a cooling chamber, and a discharge chamber in sequence; A plurality of sealing structures are provided, each of the sealing structures corresponding to each of the communication ports; There are multiple conveying assemblies, each of which is arranged at the bottom of each chamber and is used to convey the crucible containing the carbon-silicon mixture.

2. The continuous synthesis device based on silicon carbide powder according to claim 1, characterized in that: Each of the sealing structures includes a chamber door slidably arranged on the reaction furnace along a vertical direction.

3. The continuous synthesis device based on silicon carbide powder according to claim 1, characterized in that: The reaction furnace is provided with a plurality of sealing doors corresponding to each of the chambers.

4. The continuous synthesis device based on silicon carbide powder according to claim 1, characterized in that: The arrangement direction of each of the chambers is set as a first direction, and the horizontal direction perpendicular to the first direction is set as a second direction; each of the conveying components includes: A plurality of first rotating shafts are provided, each of which is parallel and spaced apart along the first direction, and each of which is arranged at one side of the reaction furnace along the second direction; each of the first rotating shafts is rotatably disposed on the reaction furnace, and one end of each first rotating shaft extends into the corresponding chamber; the outer end of each first rotating shaft is dynamically connected to a first driving component; A plurality of second rotating shafts are provided, each of the first rotating shafts is arranged along the second direction at the other side of the reactor, and each of the second rotating shafts corresponds coaxially to each of the first rotating shafts; the outer end of the second rotating shaft arranged near one side of the feeding bin is dynamically connected to a second driving component; The rotating drum is located in the corresponding chamber, and two ends thereof are rotatably connected to the corresponding first rotating shaft and the second rotating shaft through one-way bearings.

5. The continuous synthesis device based on silicon carbide powder according to claim 4, characterized in that: The rotating drum is made of high temperature resistant ceramic material.

6. The continuous synthesis device based on silicon carbide powder according to claim 5, characterized in that: The height at which the top end of each rotating drum is located is higher than the height at which the bottom end of each communicating port is located.

7. The continuous synthesis device based on silicon carbide powder according to claim 4, characterized in that: The first driving component comprises: a first driver, in dynamic connection with one of the first rotating shafts; The chain transmission structure is provided with a plurality of groups, and any two adjacent first rotating shafts are dynamically connected via a group of the chain transmission structures.

8. The continuous synthesis device based on silicon carbide powder according to claim 4, characterized in that: The second driving component includes a second driver.

9. A continuous synthesis method based on silicon carbide powder, characterized in that: The continuous synthesis device based on silicon carbide powder according to any one of claims 1 to 8 is used; the continuous synthesis method based on silicon carbide powder comprises the following steps: Feeding and preheating: placing the crucible containing the carbon-silicon mixture into the feeding bin, and conveying the crucible containing the carbon-silicon mixture into the vacuum bin through the conveying assembly, and preheating; The front-end material is transferred and reacted, the internal environment of the first transition chamber is adjusted to be consistent with the vacuum chamber, and the sealing structure between the vacuum chamber and the first transition chamber is opened, and the crucible containing the carbon-silicon mixture is sent to the first transition chamber through the conveying component; then the internal environment of the first transition chamber is changed to be consistent with the first reaction chamber, and after the sealing structure between the first transition chamber and the first reaction chamber is opened, the crucible containing the carbon-silicon mixture is sent to the first reaction chamber through the conveying component; The rear-end material transition transfer and reaction, adjust the internal environment of the second transition chamber to be consistent with that of the first reaction chamber, open the sealing structure between the second transition chamber and the first reaction chamber, and send the crucible containing the carbon-silicon mixture to the second transition chamber through the conveying assembly; then change the internal environment of the second transition chamber to be consistent with that of the second reaction chamber, open the sealing structure between the second transition chamber and the second reaction chamber, and send the crucible containing the carbon-silicon mixture to the second reaction chamber through the conveying assembly; Cool the material and adjust the internal environment of the third transition bin to be consistent with that of the second reaction bin, open the sealing structure between the third transition bin and the second reaction bin, and send the crucible containing the carbon-silicon mixture to the third transition bin through the conveying assembly; then change the internal environment of the third transition bin to be consistent with that of the cooling bin, open the sealing structure between the cooling bin and the third transition bin, and send the crucible containing the carbon-silicon mixture to the cooling bin through the conveying assembly; then transfer it to the storage bin.

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