Chemical mechanical polishing method and equipment, medium and program product

Abstract

The invention discloses a chemical mechanical polishing method and device, a medium and a program product, and the chemical mechanical polishing method comprises the steps that historical polishing data with the same consumable type are collected, historical polishing rates are obtained, and the rate average value of the historical polishing rates is calculated; if the rate average value is within the rate threshold range, the maximum polishing thickness and the minimum polishing thickness are calculated according to the rate average value, the maximum polishing time and the minimum polishing time; and if the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the rate average value is set as the default polishing rate of the consumable period, and the default polishing rate is used for conducting chemical mechanical polishing in the consumable period.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a chemical mechanical polishing method and equipment, medium, and program product. Background Art

[0002] With the rapid development of ultra-large-scale integrated circuits, the manufacturing process of integrated circuits has become more and more complex and sophisticated, and the requirements for the flatness of the wafer surface have become more and more stringent. As an important process for global surface flattening, chemical mechanical polishing (CMP) has been continuously pursued in the development of CMP technology in order to control the polishing removal amount of each product more and more accurately.

[0003] Current CMP equipment is equipped with a polishing time adjustment function, which continuously optimizes the polishing time based on historical polishing data, accurately controls the polishing removal amount, and makes the film thickness after CMP closer to the target value. However, this function is based on a large amount of data. When a new product is produced offline, the first wafer needs to use the default polishing rate due to lack of data. When the data is cleared, the default polishing rate also needs to be used due to lack of data. Therefore, the value of the default polishing rate is extremely important to ensure the processing accuracy of the wafer when there is less data.

[0004] In view of this, how to optimize the default polishing rate becomes a technical problem that needs to be solved urgently in the prior art. Summary of the invention

[0005] In view of this, the present application provides a chemical mechanical polishing method and chemical mechanical polishing equipment, medium, and program product to at least partially solve the above technical problems.

[0006] In a first aspect, the present application provides a chemical mechanical polishing method, comprising: collecting historical polishing data of the same consumable type, obtaining a historical polishing rate, and calculating a rate average of the historical polishing rate; if the rate average is within a rate threshold range, calculating a maximum polishing thickness and a minimum polishing thickness based on the rate average and a maximum polishing time and a minimum polishing time; if the maximum polishing thickness and the minimum polishing thickness are both within a preset thickness range, setting the rate average as a default polishing rate for a consumable cycle, so as to perform chemical mechanical polishing using the default polishing rate within the consumable cycle.

[0007] Optionally, collecting historical polishing data of the same consumable type to obtain historical polishing rates, and calculating the rate average of the historical polishing rates includes: collecting historical polishing data of the same consumable type to obtain historical polishing rates; removing extreme values ​​in the historical polishing data, and calculating the rate average of the remaining historical polishing data.

[0008] Optionally, if the maximum polishing thickness and the minimum polishing thickness are both within a preset thickness range, the rate average value is set as the default polishing rate of the consumable cycle, so that chemical mechanical polishing is performed using the default polishing rate within the consumable cycle, including: if the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the rate average value is compared with the current default polishing rate; if the comparison result is within a preset difference range, the rate average value is set as the default polishing rate of the consumable cycle, so that chemical mechanical polishing is performed using the default polishing rate within the consumable cycle.

[0009] Optionally, the method further comprises: if the comparison result is not within a preset difference range, prompting an alarm.

[0010] Optionally, the use of a default polishing rate for chemical mechanical polishing within a consumable cycle includes: at the beginning of the consumable cycle, clearing historical polishing data, and starting chemical mechanical polishing of the first wafer using the default polishing rate; or, when the type of wafer product being polished is changed within the consumable cycle, starting chemical mechanical polishing of the first wafer after replacement using the default polishing rate.

[0011] Optionally, the historical polishing data includes the wafer pre-value thickness, the wafer post-value thickness and the wafer polishing time, and the rate threshold range default RR1 is calculated by the following formula: default RR1=(averageA-averageB) / averageC, wherein averageA is the average wafer pre-value thickness, averageB is the average wafer post-value thickness, and averageC is the average wafer polishing time.

[0012] The second aspect of the present application provides a chemical mechanical polishing equipment, which includes: a polishing disk, a carrying head, a liquid supply device and a controller; the carrying head loads the wafer to be polished and abuts it against the polishing pad above the polishing disk, and the liquid supply device supplies polishing liquid between the polishing pad and the wafer; the controller is used to execute the above method.

[0013] The third aspect of the present application provides an electronic device, including: a processor, a communication interface, a memory and a communication bus, wherein the processor, the memory and the communication interface communicate with each other through the communication bus; the memory is used to store at least one executable instruction, and the executable instruction enables the processor to perform the operation corresponding to the above method.

[0014] A fourth aspect of the present application provides a computer storage medium having a computer program stored thereon, which implements the above method when executed by a processor.

[0015] A fifth aspect of the present application provides a computer program product, characterized in that it includes computer instructions, and the computer instructions instruct a computing device to perform operations corresponding to the above method.

[0016] In the present application, historical polishing data of the same consumable type is collected to obtain historical polishing rates, and the rate average of the historical polishing rates is calculated; If the rate average value is within the rate threshold range, the maximum polishing thickness and the minimum polishing thickness are calculated according to the rate average value and the maximum polishing time and the minimum polishing time; If the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the rate average value is set as the default polishing rate of the consumable cycle, so as to perform chemical mechanical polishing at the default polishing rate in the consumable cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0018] Figure 1 is a schematic diagram of a chemical mechanical polishing device according to an embodiment of the present application; Figure 2 is a schematic flow chart of a chemical mechanical polishing method according to an embodiment of the present application; Figure 3 is a schematic diagram of RR value update according to an embodiment of the present application; Figure 4 It is a schematic diagram of changing the wafer processing type within the consumable cycle; Figure 5 is a schematic flow chart of a chemical mechanical polishing method according to another embodiment of the present application; Figure 6 It is a schematic diagram of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the embodiments of the present application should fall within the scope of protection of the embodiments of the present application.

[0020] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0021] It should be understood that although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0022] The technical solutions in the embodiments of the present application are clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In the absence of conflict, the following embodiments and their technical features can be combined with each other.

[0023] In order to illustrate the technical solution of the present invention, the following description will be given with reference to the accompanying drawings and in combination with embodiments.

[0024] In this application, chemical mechanical polishing is also referred to as chemical mechanical planarization, and wafer is also referred to as chip, silicon wafer, base wafer or substrate, etc., and their meanings and actual functions are equivalent.

[0025] like Figure 1 As shown, the chemical mechanical polishing equipment includes a carrier head 10 for holding a wafer w and driving the wafer w to rotate, a polishing plate 20 covered with a polishing pad 21, a dresser 30 for dressing the polishing pad 21, and a liquid supply part 40 for providing a polishing liquid.

[0026] During the chemical mechanical polishing process, the carrier head 10 presses the wafer w onto the polishing pad 21 covered on the surface of the polishing disk 20, and the carrier head 10 performs a rotational motion and a radial reciprocating motion along the polishing disk 20 so that the surface of the wafer w in contact with the polishing pad 21 is gradually polished, while the polishing disk 20 rotates, and the liquid supply unit 40 sprays the polishing liquid onto the surface of the polishing pad 21. Under the chemical action of the polishing liquid, the relative movement of the carrier head 10 and the polishing disk 20 causes the wafer w to rub against the polishing pad 21 for polishing. During polishing, the dresser 30 is used to dress and activate the surface morphology of the polishing pad 21. The dresser 30 can be used to remove foreign particles remaining on the surface of the polishing pad 21, such as polishing particles in the polishing liquid and waste materials falling off the surface of the wafer w, and can also flatten the surface deformation of the polishing pad 21 caused by polishing.

[0027] When using the automatic time adjustment function of the chemical mechanical polishing equipment, the default polishing rate default RR setting has the following problems: 1. First, use artificial experience to assign values. After RR data is generated in subsequent production, on-site maintenance personnel are required to obtain the data and update the default polishing rate default RR based on their own experience. In addition, considering the impact of changes in consumables and other factors, the default polishing rate default RR needs to be confirmed every once in a while to see if it meets the current production situation, which wastes the time cost of on-site maintenance personnel.

[0028] 2. The interval period for obtaining data is not fixed. Usually, when abnormal film thickness data appears after using the default polishing rate default RR, the on-site maintenance personnel will be alerted to the need to update the default polishing rate default RR. Update delays may cause over-grinding or under-polishing of the wafer, resulting in wafer scrapping.

[0029] 3. The updating principle of the default polishing rate default RR is not clearly defined in the existing production. The absence of standard principle may easily lead to the unreality of the default polishing rate default RR setting and may be greatly affected by the subjective influence of personnel.

[0030] To address at least some of the above issues, see Figure 2 Based on the above chemical mechanical polishing equipment, an embodiment of the present invention provides a chemical mechanical polishing method, including: S101. Collect historical polishing data of the same consumable type, obtain historical polishing rates, and calculate an average rate of the historical polishing rates.

[0031] In the chemical mechanical polishing equipment, the main consumables include the polishing pad 21, the dresser 30, the retaining ring and the carrier head 10. Figure 1As shown, the polishing pad 21 covers the surface of the polishing disc 20, and is used to contact with the wafer W and realize physical friction, while storing and transporting the polishing liquid, removing the grinding debris, and maintaining a stable polishing environment. The dresser 30 is used to dress the surface morphology of the polishing pad 21, and remove the foreign particles remaining on the surface of the polishing pad, such as the abrasive particles in the polishing liquid and the waste material falling off the surface of the wafer W. The retaining ring is used to fix the wafer W to ensure that it remains stable during the polishing process and prevent the wafer from detaching from the carrier head 10. As a key component, the carrier head 10 fixes the wafer W by vacuum adsorption and other means, applies pressure to make it in close contact with the polishing pad 21, and drives the wafer W to rotate to achieve chemical mechanical polishing. These consumables play an important role in the CMP process and directly affect the flatness, uniformity and yield of the wafer.

[0032] Because consumables will continue to wear during the processing, when replacing consumables, you can choose to replace the same consumables as the previous batch, or you can choose to replace different types of consumables. The difference in consumables will greatly affect the chemical polishing process. For this reason, in this embodiment, historical polishing data with the same consumable type is collected to ensure data availability. In addition, in order to ensure data validity, the system sets a control value for the number of data that needs to be collected, and starts to count the historical polishing rates in the historical polishing data after reaching the control value.

[0033] Preferably, data within a consumable cycle can be collected as historical polishing data to avoid data fluctuations caused by replacing consumables. Each historical polishing data may include: Pre thk: the previous value thickness of the incoming wafer; Post thk: the post value thickness of the wafer after polishing; Polish time: the polishing time of the wafer; RR real: the actual polishing rate of the wafer; Target: the target thickness of the wafer. Of course, the historical polishing data in this embodiment at least includes the actual polishing rate RRreal of the wafer, and others can be optional. The material removal rate (Removing Rate) of chemical mechanical polishing is referred to as RR.

[0034] After the historical polishing data is collected, the historical polishing rate can be obtained based on the historical polishing data, and the rate average of the historical polishing rate can be calculated.

[0035] For ease of understanding, the usage scenario of the default polishing rate default RR in this application is first described.

[0036] The default polishing rate default RR has two usage scenarios: 1. At the beginning of the consumable cycle, the historical polishing data is cleared, and the default polishing rate default RR is used to start chemical mechanical polishing of the first wafer; 2. When the type of wafer being polished is changed within the consumable cycle, the default polishing rate default RR is used to start chemical mechanical polishing of the first wafer after the change.

[0037] See also Figure 3 When the polishing time adjustment function is used for this type of wafer for the first time, the default RR will be called. Because the wafer has not been produced, there is no data to query. Only the pre-assigned default polishing rate default RR can be used. After the wafer uses this default RR, the real RR real (denoted as RR1) can be calculated according to the calculation formula designed by the software. At this time, RR1 is used for the next wafer production. After that, RR2 can be obtained according to the formula. RR2 is used for the next wafer to obtain RR3. This cycle continues, and RRn is continuously output until the consumable reaches the replacement life, the recorded data is cleared, and the default RR is called again to start a new cycle.

[0038] For scenario 1, because the consumables are continuously worn during the processing, there is a difference between the RR value at the beginning and the end of the consumable cycle. If the data at the end of the consumable cycle is directly used as the basis for the initial data without clearing it after the consumables are replaced, there will be a large error, which is very likely to cause the calculated data to be inapplicable. Therefore, at the beginning of the consumable cycle, the historical polishing data is cleared, and the default polishing rate default RR is used to start chemical mechanical polishing of the first wafer to prevent the real RR real (recorded as RRn) at the end of the previous consumable cycle from affecting the initial process of the current consumable cycle.

[0039] For scenario 2, when running different new products within the life of the consumables, the default polishing rate default RR needs to be compatible with the entire consumables cycle, see Figure 4 Assuming that the life of the consumables can process 1000 wafers, at the beginning of the consumables, product A will stop production after processing 200 wafers, and product B will be produced after 200 wafers. At this time, product B has no basic data in the consumables cycle. When the first piece of product B is processed, the default polishing rate default RR is called for chemical mechanical polishing to obtain the real RRreal (denoted as RR1), and then the process of using the previous real RR real for the next piece is repeated until the consumables cycle ends.

[0040] In view of the fact that chemical mechanical polishing equipment may run different types of wafer products during a consumable cycle, it is possible that a product will call the default RR as the first step in processing under any consumable life state. Therefore, the inventor of this application adopted an averaging method after many experiments, so that the default RR obtained according to the rate average value can be compatible with normal production under different consumable life conditions.

[0041] Furthermore, in this embodiment, step S102 may include: collecting historical polishing data of the same consumable type to obtain historical polishing rates; removing extreme values ​​in the historical polishing data, and calculating the rate average of the remaining historical polishing data. In this way, the influence of extreme values ​​in the historical polishing data can be removed, so that the rate average of the remaining historical polishing data can reflect the average use of the consumable.

[0042] S102: If the rate average value is within a rate threshold range, calculating a maximum polishing thickness and a minimum polishing thickness according to the rate average value and a maximum polishing time and a minimum polishing time.

[0043] Optionally, in an embodiment of the present application, the historical polishing data includes a wafer pre-value thickness Pre thk, a wafer post-value thickness Post thk, and a wafer polishing time Polish time, and the rate threshold range default RR1 is calculated by the following formula: default RR1=(averageA-averageB) / average Among them, averageA is the average value of wafer pre-thickness Pre thk, averageB is the average value of wafer post-thickness Post thk, and averageC is the average value of wafer polishing time Polish time.

[0044] Considering that it is an average value calculated based on historical polishing rate data, similarly, the wafer pre-value thickness Pre thk, wafer post-value thickness Post thk and wafer polishing time Polish time in all historical polishing data are taken, and the rate threshold range default RR1 calculated should be infinitely close to the rate average value default RRA obtained by averaging, so default RR1-default RRA=IKI is set to determine whether the IKI value is close to 0. If there is no abnormality in the historical polishing data taken, IKI will be infinitely close to zero. The rate threshold range is used as the first line of defense to prevent abnormal data from existing in the acquired historical polishing data. During actual polishing, technicians in this field can set the data range of IKI based on experience, for example, less than 0.1, to limit the degree of proximity between the two.

[0045] If the rate average value is not within the rate threshold range, that is, the IKI value is not close to zero, then continue to calculate the average value of the historical polishing rate data (by removing the maximum and minimum values ​​in the data to obtain the default RRA).

[0046] If the rate average value is within the rate threshold range, that is, the IKI value is close to zero, the maximum polishing thickness and the minimum polishing thickness can be calculated based on the rate average value and the maximum polishing time (maximum polish time value) and the minimum polishing time (minimum polish time value).

[0047] Maximum polishing thickness: Target1 = default RRA*polish time maximum value, to determine whether Target1 is within the control range of film thickness; Minimum polishing thickness: Target2 = default RRA*polish time minimum value, to determine whether Target2 is within the control range of film thickness.

[0048] S103: If the maximum polishing thickness and the minimum polishing thickness are both within a preset thickness range, the rate average value is set as a default polishing rate for a consumable cycle, so as to perform chemical mechanical polishing at the default polishing rate within the consumable cycle.

[0049] Each product has its own film thickness requirements and range control. The basic purpose of polishing is to achieve the required range value, and on this basis, make the film thickness as close to the target value as possible. The default polishing rate default RR is set to ensure that it is within the film thickness range required for polishing during any consumable cycle. Therefore, when the rate threshold range is verified to be normal, the default RRA obtained by taking the average can continue to be judged for extremes. When the default RRA value is used to encounter the maximum polishing time, whether it can be within the film thickness control range, or when the default RRA value encounters the minimum polishing time, whether it can be within the film thickness control range. If the maximum / minimum polishing time is used, and the maximum polishing thickness and the minimum polishing thickness meet the control range value, it means that the value can actually meet the film thickness control requirements at any time (when there is data recording).

[0050] At this time, the rate average value default RRA can be set as the default polishing rate defaultRR of the consumable cycle, and the chemical mechanical polishing is performed using the default polishing rate during the consumable cycle.

[0051] In this embodiment, the average rate calculated from historical consumable cycles can be set as the current default polishing rate, or the average rate calculated based on historical polishing data before the current moment can be set as the default polishing rate for the consumable cycle at the current moment, both of which are within the protection scope of this application.

[0052] In this embodiment, step SA103 may include: if the maximum polishing thickness and the minimum polishing thickness are both within a preset thickness range, comparing the rate average value with the current default polishing rate; if the comparison result is within a preset difference range, setting the rate average value as the default polishing rate for the consumable cycle, so as to perform chemical mechanical polishing using the default polishing rate within the consumable cycle.

[0053] Optionally, in this embodiment, if the comparison result is not within a preset difference range, an alarm is prompted.

[0054] The solution provided in this application can automatically update and optimize the default polishing rate based on historical data. The automatic update optimization process is mainly corrected by maintenance personnel, which can minimize the workload of maintenance personnel, reduce the time cost of on-site maintenance personnel, and avoid over-grinding or insufficient polishing of wafers due to untimely updates, resulting in wafer scrapping.

[0055] See also Figure 5 , the solution of the present application is exemplified by a specific implementation method, such as Figure 5 As shown, the method includes: S201, setting an initial default polishing rate default RR.

[0056] S202, start polishing and obtain historical polishing data, including a real rate RRreal as a historical polishing rate.

[0057] S203, pre-set the control of the data collection quantity in the system, and start to collect statistics on the real rate RRreal (including RR1, RR2, RR3, ..., RRn) after reaching the control value.

[0058] S204. Remove the minimum and maximum values ​​in the statistical values, and calculate the rate average value default RRA=average(RR1+RR2+RR3+…+RRn).

[0059] S205, first verification: default RR1=(averageA-averageB) / averageC, default RR1-default RRA=IKI, determine whether the IKI value is less than the set control, if it meets the requirements, enter the second verification; if it does not meet the requirements, return to step S204 and continue to calculate the value of default RRA based on the newly collected data.

[0060] Among them, averageA is the average thickness before the wafer, averageB is the average thickness after the wafer, and averageC is the average wafer polishing time.

[0061] Consider that the average value of the historical polishing rate RR real data in the real historical polishing data is used, and the real historical polishing rate RR real = (Pre thk-Post thk) / polish time. Similarly, the (average pre-value-average post-value) / average polishing time of all data = default RR1 should be infinitely close to the rate average default RRA, so set default RR1-default RRA=IKI, and determine whether the IKI value is less than the set control. If there is no abnormality in the acquired data, IKI will infinitely approach zero. The IKI value judgment is the first line of defense to prevent abnormal data from existing in the acquired data.

[0062] S206, second verification: maximum polishing thickness Targeter1 = default RRA*polish time maximum value, determine whether Target1 is within the control range of film thickness; minimum polishing thickness Targeter2 = default RRA*polish time minimum value, determine whether Target2 is within the control range of film thickness; if the requirements are met, output default RRA; if the requirements are not met, return to step S204 and continue to calculate the value of default RRA based on the newly collected data.

[0063] Each product has its own film thickness requirements and range control, and the purpose of polishing is to achieve the required range value. When the first verification is normal, it is necessary to make an extreme judgment on the default RRA obtained by taking the average, whether it can be within the film thickness control range when the default RRA value is used to encounter the maximum polishing time, or whether it can be within the film thickness control range when the default RRA value encounters the minimum polishing time. If the polishing thickness meets the control range value under the maximum / minimum polishing time, it means that the value can actually meet the film thickness control requirements at any time (when there is data recording).

[0064] S207, third verification: compare the output default RRA with the currently used default RR, output the difference ILI, and determine whether the ILI value is less than the set control. If it meets the requirements, update the current default RR; if it does not meet the requirements, an alarm will be prompted and no update will be made, waiting for maintenance personnel to confirm the data.

[0065] When the second step of verification is passed, it can be proved that the default RRA obtained by taking the average value can be output normally for update. However, considering the update of data, it is necessary to set control, and not any value can be updated; in the normal life cycle of consumables, the consumables used are the same, and only the batches will have differences, so the RR (rate) should have roughly the same performance trend in the life cycle of different batches of consumables, and there will not be particularly outrageous differences; therefore, the default RRA to be updated is compared with the old default RR to obtain the ILI, and determine whether the ILI value is less than the set control. If the difference is too large, the on-site maintenance personnel should be reminded to check and confirm why the data difference is large, rather than blindly outputting the new default RR value and ending the update.

[0066] In this embodiment, an electronic device 600 is provided, such as Figure 6 As shown, the electronic device 600 may include: a processor 601, a communications interface 602, a memory 603, and a communication bus 604. Among them: The processor 601 , the communication interface 602 , and the memory 603 communicate with each other via the communication bus 604 .

[0067] The communication interface 602 is used to communicate with other electronic devices or servers.

[0068] The processor 601 is used to execute the program 605, and specifically can execute the relevant steps in the aforementioned chemical mechanical polishing method embodiment.

[0069] Specifically, the program 605 may include program codes, which include computer operation instructions.

[0070] The processor 601 may be a CPU, or an Application Specific Integrated Circuit (ASIC), or may be configured as one or more integrated circuits. The one or more processors included in the smart device may be processors of the same type, such as one or more CPUs, or processors of different types, such as one or more CPUs and one or more ASICs.

[0071] The memory 603 is used to store the program 605. The memory 603 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0072] The program 605 can be specifically used to enable the processor 401 to execute the chemical mechanical polishing method in the aforementioned embodiment.

[0073] In this embodiment, a computer-readable storage medium is provided, storing instructions for causing a machine to perform the chemical mechanical polishing method as described herein. Specifically, a system or device equipped with a storage medium can be provided, on which a software program code for implementing the functions of any of the above embodiments is stored, and a computer (or CPU or MPU) of the system or device reads and executes the program code stored in the storage medium.

[0074] In this case, the program code read from the storage medium itself can implement the functions in the above method embodiments, so the program code and the storage medium storing the program code constitute part of the present application.

[0075] The storage medium embodiments for providing the program code include a floppy disk, a hard disk, a magneto-optical disk, an optical disk (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), a magnetic tape, a non-volatile memory card, and a ROM. Alternatively, the program code can be downloaded from a server computer via a communication network.

[0076] In this embodiment, a computer program product is provided, including computer instructions, which instruct a computing device to perform operations corresponding to the above method embodiments.

[0077] It should be pointed out that, according to the needs of implementation, the various components / steps described in the embodiments of the present application can be split into more components / steps, or two or more components / steps or partial operations of components / steps can be combined into new components / steps to achieve the purpose of the embodiments of the present application.

[0078] The above-mentioned method according to the embodiment of the present application can be implemented in hardware, firmware, or implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk or magneto-optical disk), or implemented as a computer code originally stored in a remote recording medium or a non-temporary machine-readable medium downloaded through a network and to be stored in a local recording medium, so that the method described herein can be stored in such software processing on a recording medium using a general-purpose computer, a special-purpose processor or programmable or special-purpose hardware (such as an ASIC or FPGA). It can be understood that a computer, a processor, a microprocessor controller or programmable hardware includes a storage component (e.g., RAM, ROM, flash memory, etc.) that can store or receive software or computer code, and when the software or computer code is accessed and executed by a computer, a processor or hardware, the method described herein is implemented. In addition, when a general-purpose computer accesses the code for implementing the method shown here, the execution of the code converts the general-purpose computer into a special-purpose computer for executing the method shown here.

[0079] Although the present application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on a reading and understanding of this specification and the accompanying drawings. The present application includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components, the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (e.g., it is functionally equivalent), even if the structure is not equivalent to the disclosed structure that performs the function in the exemplary implementation of the present specification shown herein.

[0080] That is, the above description is only an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

[0081] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0082] In order to enable any technician in the field to implement and use the application, the application provides the above description. In the above description, various details are listed for the purpose of explanation. It should be understood that those of ordinary skill in the art can recognize that the application can also be implemented without using these specific details. In other embodiments, the well-known process will not be elaborated in detail to avoid unnecessary details that make the description of the application obscure. Therefore, the application is not intended to be limited to the embodiments shown, but is consistent with the widest range of principles and features disclosed in the application.

[0083] It should be noted that, under the premise of no conflict, the various embodiments and / or the technical features in the various embodiments described in this application can be arbitrarily combined with each other, and the technical solution obtained after the combination should also fall within the protection scope of this application.

[0084] It should be understood that the specific examples in the embodiments of the present application are only to help those skilled in the art to better understand the embodiments of the present application, rather than to limit the scope of the embodiments of the present application. Those skilled in the art can make various improvements and modifications based on the above embodiments, and these improvements or modifications all fall within the scope of protection of the present application.

[0085] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A chemical mechanical polishing method, characterized in that: include: Collect historical polishing data of the same consumable type, obtain historical polishing rates, and calculate the average rate of the historical polishing rates; If the rate average value is within the rate threshold range, the maximum polishing thickness and the minimum polishing thickness are calculated according to the rate average value and the maximum polishing time and the minimum polishing time; If the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the rate average value is set as the default polishing rate of the consumable cycle, so as to perform chemical mechanical polishing at the default polishing rate in the consumable cycle.

2. The method according to claim 1, characterized in that The collecting of historical polishing data of the same consumable type to obtain historical polishing rates and calculating the average rate of the historical polishing rates includes: Collect historical polishing data of the same consumable type to obtain historical polishing rate; The extreme values ​​in the historical polishing data are removed, and the rate average of the remaining historical polishing data is calculated.

3. The method according to claim 1, characterized in that If the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the average rate is set as the default polishing rate of the consumable cycle, so as to perform chemical mechanical polishing at the default polishing rate during the consumable cycle, including: If the maximum polishing thickness and the minimum polishing thickness are both within the preset thickness range, the rate average is compared with the current default polishing rate; If the comparison result is within the preset difference range, the rate average value is set as the default polishing rate of the consumable cycle, so as to perform chemical mechanical polishing at the default polishing rate during the consumable cycle.

4. The method according to claim 3, characterized in that The method further includes: if the comparison result is not within the preset difference range, prompting an alarm.

5. The method according to any one of claims 1 to 4, characterized in that: CMP using the default polishing rate for this consumable cycle, including: At the beginning of the consumable cycle, the historical polishing data is cleared and the chemical mechanical polishing of the first wafer is started using the default polishing rate; Alternatively, when the type of wafer product being polished is changed during a consumable cycle, chemical mechanical polishing is started on the first wafer after the change using a default polishing rate.

6. The method according to any one of claims 1 to 4, characterized in that: The historical polishing data includes wafer pre-value thickness, wafer post-value thickness and wafer polishing time, and the rate threshold range default RR1 is calculated by the following formula: default RR1=(averageA-averageB) / averageC, where averageA is the average thickness before wafer, averageB is the average thickness after wafer, and averageC is the average wafer polishing time.

7. A chemical mechanical polishing device, characterized in that: include: Polishing disc, carrier head, fluid supply device and controller; The carrier head loads the wafer to be polished and abuts it against the polishing pad above the polishing plate, and the liquid supply device supplies polishing liquid between the polishing pad and the wafer; The controller is configured to execute the method according to any one of claims 1 to 6.

8. An electronic device, characterized in that: include: A processor, a communication interface, a memory and a communication bus, wherein the processor, the memory and the communication interface communicate with each other via the communication bus; The memory is used to store at least one executable instruction, and the executable instruction enables the processor to execute an operation corresponding to any one of the methods described in claims 1-6.

9. A computer storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

10. A computer program product, characterized in that The method comprises computer instructions, wherein the computer instructions instruct a computing device to execute operations corresponding to the method according to any one of claims 1 to 6.

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