Chemical liquid conveying unit for rapidly adjusting temperature and chemical mechanical planarization equipment

Abstract

The utility model discloses a chemical liquid conveying unit for quickly adjusting temperature, which comprises a liquid conveying pipe, a liquid conveying pipe and a temperature adjusting device, the semiconductor electric heating module is arranged on the outer side of the infusion tube and attached to the outer wall of the infusion tube; the semiconductor electric heating module has first and second heat conduction states; when the liquid temperature in the infusion channel is lower than the target temperature, the semiconductor electric heating module enters a first heat conduction state, and the external temperature is conducted to the liquid in the infusion channel; when the liquid temperature in the infusion channel is higher than the target temperature, the semiconductor electric heating module enters a second heat conduction state, and the liquid temperature in the infusion channel is conducted to the outside. The utility model also discloses chemical mechanical planarization equipment. According to the utility model, the temperature of the liquid in the transfusion channel can be quickly and accurately adjusted, and the temperature can be increased and decreased.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a chemical liquid delivery unit for rapid temperature regulation and a chemical mechanical flattening device. Background Art

[0002] In the semiconductor integrated circuit chip manufacturing process, planarization technology has become one of the indispensable key technologies. Chemical Mechanical Planarization (CMP) process is currently the most effective and mature planarization technology. CMP equipment is fully automated, ensuring the safety of every module and every link in the wafer production process, which is of great significance for safe production, reducing losses, and improving production efficiency. In the wafer planarization process, the reaction temperature is one of the important factors affecting the removal rate of wafer surface materials. The overall reaction temperature and the temperature distribution of the wafer radial direction will affect the average thickness, flatness and production efficiency of the product surface layer. Therefore, precise control of the temperature of the wafer, polishing liquid and polishing pad is one of the keys to chemical mechanical planarization.

[0003] The chemical mechanical planarization equipment includes a polishing pad base, a polishing head, a polishing pad dresser, and a polishing liquid delivery arm. During operation, the flexible cavity at the bottom of the polishing head adsorbs the wafer through air pressure, and then presses the wafer between the polishing pad and the polishing head through air pressure, and the delivery arm transfers the polishing liquid to the polishing pad. During operation, the polishing head and the polishing pad rotate, and the polishing liquid will enter the contact surface between the wafer and the polishing pad under the polishing head as the polishing pad rotates. A chemical mechanical process occurs at this interface, so that the material on the surface of the wafer is gradually removed, the thickness gradually decreases, and finally a wafer with specific surface morphology and characteristics is obtained. The polishing pad dresser can rotate and swing to clean the reaction products remaining on the polishing pad and keep the surface of the polishing pad clean. In the actual production process, a large amount of heat will be generated between the wafer, the polishing liquid and the polishing pad. This heat will cause the components such as the wafer, the polishing pad, and the polishing head to gradually rise from room temperature, thereby increasing the removal rate of the surface layer of the wafer. At the same time, if the temperature of the supplied grinding liquid is always maintained at room temperature, the grinding liquid will cause the temperature of the periphery of the wafer that first contacts the grinding liquid to drop, resulting in a radial temperature difference in the wafer, and the temperature in the center of the wafer is higher than the temperature in the circumference, which in turn results in a higher removal rate in the center than in the circumference, ultimately causing adverse consequences such as wafer concavity and decreased flatness.

[0004] The first type of improvement scheme currently available is to preheat the polishing liquid in a constant temperature container to a high temperature that the polishing pad is expected to reach and maintain in the later stage of the polishing process, and directly use the high temperature polishing liquid for the polishing process. This scheme can keep the radial removal rate of the wafer consistent in the middle and later stages of polishing. However, in the early stage of polishing, the high temperature polishing liquid contacts the room temperature wafer, which will cause the temperature of the circumferential area that first contacts the polishing liquid to be higher than the center, resulting in the result that the removal rate in the center is lower than the removal rate in the circumference.

[0005] The second type of existing improvement scheme is based on the first type, which collects the temperature of the grinding pad in real time and heats the supplied grinding liquid in real time to a temperature that matches the grinding pad. However, after each wafer is ground, the grinding pad must be cleaned with deionized water to keep it clean. The grinding pad will quickly cool down to room temperature during the process, but the heated grinding liquid remaining in the heating pipeline cannot be quickly cooled down to the corresponding temperature. Although the wafer flatness is improved in this scheme, the initial stage of grinding will still be affected by certain adverse consequences caused by the temperature difference. In view of this, some users will pre-discharge the high-temperature grinding liquid remaining in the heating pipeline before grinding the next wafer each time. Doing so for a long time will cause a large amount of grinding liquid waste.

[0006] The third type of existing improvement scheme is based on the second type. After grinding, the grinding pad is cleaned with high-temperature deionized water, or after cleaning with room-temperature deionized water, additional equipment or components are used to heat the grinding pad to a high temperature in advance, so that all components involved in grinding are always kept at a consistent high temperature. However, this type of solution has the disadvantages of high energy consumption (always using high-temperature deionized water) or complex structure and inconvenient maintenance (additional grinding pad heating component).

[0007] The existing fourth type of improvement scheme is based on the second type. Coolant is added to the polishing pad base to keep the overall polishing process at a low temperature and reduce the temperature difference between the polishing liquid and the wafer in the initial stage of polishing. This scheme can effectively improve the quality of the product surface. However, the overall temperature reduction will cause the overall removal rate to decrease, which in turn requires increasing the polishing time of a single wafer, reducing the wafer processing efficiency.

[0008] Therefore, considering multiple factors such as product surface quality, production energy consumption, production efficiency, equipment cost and maintenance, the current grinding fluid temperature control system still has many shortcomings. Utility Model Content

[0009] In order to overcome the deficiencies of the prior art, the utility model provides a chemical liquid delivery unit and a chemical mechanical planarization device for rapid temperature adjustment, which has a fast temperature adjustment speed for the chemical liquid and can achieve temperature increase or decrease to ensure planarization efficiency and planarization effect.

[0010] The technical solution adopted by the utility model to solve the technical problem is: a chemical liquid delivery unit for rapid temperature adjustment, comprising:

[0011] an infusion tube, at least one infusion channel being formed inside the tube;

[0012] The semiconductor electric heating module is arranged outside the infusion tube and at least partially adheres to the outer wall of the infusion tube;

[0013] The semiconductor electric heating module has a first heat conduction state and a second heat conduction state;

[0014] When the temperature of the liquid in the infusion channel is lower than the target temperature, the semiconductor electric heating module may enter a first heat conduction state to conduct the external temperature to the liquid in the infusion channel;

[0015] When the temperature of the liquid in the infusion channel is greater than the target temperature, the semiconductor electric heating module can enter the second heat conduction state, and the temperature of the liquid in the infusion channel is conducted to the outside.

[0016] Furthermore, it also includes a heat flow unit, which has a heat carrier flowing therein and is at least partially in contact with the semiconductor electric heating module, for providing the heat required by the semiconductor electric heating module, or for receiving heat conducted from the semiconductor electric heating module.

[0017] Furthermore, there are multiple infusion channels, and the liquids in at least two of the infusion channels flow in opposite directions.

[0018] Furthermore, the liquids in at least two infusion channels flow in opposite directions, and the two infusion channels are interconnected.

[0019] Furthermore, the infusion tube has a revolving channel, and the revolving channel is used to connect the infusion channels with opposite liquid flow directions.

[0020] Furthermore, the infusion tube is provided with a cover plate, and the rotation channel is formed on the cover plate.

[0021] Furthermore, the infusion channels are continuously arranged, and the rotary channel is located inside the infusion tube.

[0022] Furthermore, the number of the infusion channel is one, and the flow direction of the liquid inside the infusion channel is variable.

[0023] Furthermore, the heat flow unit is provided with one or two or more branch channels and an end cover, and the end cover has a circuitous channel for connecting the branch channels.

[0024] Further, the cover plate and the end cover are integrally arranged; or, the cover plate and the end cover are separately arranged.

[0025] Furthermore, the infusion channel is at least partially spiral, or at least partially linear, or the infusion channel at least includes a bending section for changing the flow direction of the internal liquid.

[0026] Furthermore, the semiconductor electric heating module enters a first thermal conduction state when a forward voltage is applied, and enters a second thermal conduction state when a reverse voltage is applied; or, the semiconductor electric heating module enters a second thermal conduction state when a forward voltage is applied, and enters a first thermal conduction state when a reverse voltage is applied.

[0027] Furthermore, the heat flow unit is an annular channel wrapped around the outer circumference of the infusion tube, and clamps the semiconductor electric heating module facing the infusion tube.

[0028] Furthermore, the heat carrier circulates to provide or receive heat conducted from the semiconductor electric heating module.

[0029] Furthermore, the thermal conductivity of the heat carrier is greater than or equal to 100 W / (m·K).

[0030] Furthermore, the heat carrier is water.

[0031] Furthermore, the infusion tube is made of graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon.

[0032] Furthermore, the infusion channel is a linear channel, or a spiral channel, or a curved channel.

[0033] Furthermore, the longitudinal section of the infusion tube is circular, or elliptical, or has an arc-shaped structure.

[0034] Furthermore, the longitudinal section of the infusion tube is triangular or polygonal.

[0035] Furthermore, the semiconductor electric heating module includes a plurality of semiconductor electric heating units, and the plurality of semiconductor electric heating units are connected in series.

[0036] Furthermore, the semiconductor electric heating module is a bismuth telluride thermal conductive sheet.

[0037] The utility model also discloses a chemical mechanical planarization device, comprising a polishing table, a polishing head, a trimmer, and a grinding liquid delivery arm, wherein the grinding liquid delivery arm comprises the above-mentioned chemical liquid delivery unit.

[0038] The beneficial effects of the utility model are: 1) the temperature of the liquid in the infusion channel can be adjusted quickly and accurately, including raising and lowering the temperature; 2) when the liquid in the infusion channel is a grinding liquid, the temperature of the grinding liquid can be quickly raised and lowered in both directions, and the purpose of heating and cooling can be achieved through a device; 3) it is effective for the characteristics of the grinding liquid with a small temperature adjustment range and a high temperature adjustment speed requirement; 4) the liquids in at least two infusion channels flow in opposite directions to achieve liquid reversal, and liquids with different flow directions are heated or cooled at the same time, and the liquid stays in the heating or cooling environment for a long time, so the heat exchange is more complete and the temperature adjustment efficiency is high; 5) energy consumption is reduced, and a large amount of high-temperature cleaning liquid or grinding pad heater is avoided to maintain the temperature of the grinding pad; 6) production efficiency is improved, and the overall reduction in wafer removal rate and production efficiency caused by the use of cooling water on the grinding pad base is avoided; 7) through the infusion tube and The cooperation of the heat flow unit and the semiconductor electric heating module are used to exchange the heat of the peripheral heat flow unit with the heat of the liquid in the internal infusion channel, which can transfer more heat to the infusion channel and improve the heating effect. At the same time, during cooling, more heat can be taken away from the infusion channel to improve the cooling effect and be more flexible in application; 8) Compared with the unidirectional heating of the infusion tube by the resistance wire, the semiconductor electric heating module can be used for directionally heating or cooling. Compared with the heating of the infusion tube by the resistance wire, the semiconductor electric heating module does not need to be insulated to adjust the temperature of the liquid in the infusion channel, which will not increase the volume of the grinding liquid delivery arm, save isolation costs, and have high energy utilization; 9) The temperature of the liquid in the infusion channel is set by the use temperature of the grinding liquid and adjusted according to actual needs. A temperature sensor can be set in the infusion channel to feedback temperature information in time, so as to facilitate precise temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 This is a schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the first embodiment of the present utility model.

[0040] Figure 2 A schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present utility model Figure 1 .

[0041] Figure 3 A schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present utility model Figure 2 .

[0042] Figure 4 A schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present utility model Figure 3 .

[0043] Figure 5 Schematic diagram of the infusion tube provided in the third embodiment of the utility model Figure 1 .

[0044] Figure 6Schematic diagram of the infusion tube provided in the third embodiment of the utility model Figure 2 .

[0045] Figure 7 Schematic diagram of the infusion tube provided in the third embodiment of the utility model Figure 3 .

[0046] Figure 8 A schematic diagram of a partial three-dimensional structure of a chemical liquid delivery unit provided in the fourth embodiment of the present utility model Figure 1 .

[0047] Fig. 9 This is a schematic diagram of an infusion tube provided in Embodiment 4 of the present utility model.

[0048] Fig.10 A schematic diagram of a partial three-dimensional structure of a chemical liquid delivery unit provided in the fourth embodiment of the present utility model Figure 2 .

[0049] Fig.11 This is a schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the fifth embodiment of the present utility model.

[0050] Fig.12 This is a schematic diagram of the partial three-dimensional structure of the chemical liquid delivery unit provided in the fifth embodiment of the present utility model.

[0051] Fig.13 This is a front view of the chemical liquid delivery unit provided in the fifth embodiment of the present utility model.

[0052] Fig.14 for Fig.13 BB section view in.

[0053] Fig.15 for Fig.13 AA section view in.

[0054] Fig.16 This is a simplified diagram of the chemical mechanical planarization equipment provided by the utility model.

[0055] Fig.17 A schematic diagram of the grinding liquid delivery arm in the utility model Figure 1 .

[0056] Fig.18 A schematic diagram of the grinding liquid delivery arm in the utility model Figure 2 .

[0057] Fig.19 It is a schematic diagram of the working process of the grinding liquid temperature control system in the utility model.

[0058] Among them, 1-infusion tube, 11-infusion channel, 12-rotation channel, 13-cover plate, 14-bending section, 2-semiconductor electric heating module, 21-semiconductor electric heating unit, 3-heat flow unit, 31-branch channel, 32-end cover, 4-grinding liquid delivery arm, 5-polishing table, 51-grinding pad, 6-polishing head, 7-dresser. DETAILED DESCRIPTION

[0059] In order to enable those skilled in the art to better understand the solution of the utility model, the following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.

[0060] Embodiment 1

[0061] like Figure 1 As shown, a chemical liquid delivery unit for rapid temperature adjustment includes a liquid delivery tube 1 made of a heat-conducting material, a semiconductor electric heating module 2 arranged outside the liquid delivery tube 1, and a heat flow unit 3 with a heat carrier flowing inside.

[0062] At least one infusion channel 11 is formed inside the infusion tube 1, at least a portion of the semiconductor electric heating module 2 is in contact with the outer wall of the infusion tube 1, at least a portion of the heat flow unit 3 is in contact with the semiconductor electric heating module 2, and the heat flow unit 3 is used to provide the heat required by the semiconductor electric heating module 2, or it is used to receive the heat conducted from the semiconductor electric heating module 2.

[0063] The semiconductor electric heating module 2 has a first heat conduction state and a second heat conduction state. When the liquid temperature in the infusion channel 11 is lower than the target temperature, the semiconductor electric heating module 2 can enter the first heat conduction state. At this time, the temperature of the heat carrier is transferred from the heat flow unit 3 to the liquid in the infusion channel 11, so that the temperature of the liquid in the infusion channel 11 increases; when the liquid temperature in the infusion channel 11 is higher than the target temperature, the semiconductor electric heating module 2 can enter the second heat conduction state. At this time, the liquid temperature in the infusion channel 11 is transferred to the heat carrier, so that the temperature of the liquid in the infusion channel 11 decreases.

[0064] Of course, the heat flow unit 3 may not be set. In this case, the external temperature can be used. That is, when the liquid temperature in the infusion channel is lower than the target temperature, the semiconductor electric heating module can enter the first heat conduction state to conduct the external temperature to the liquid in the infusion channel; when the liquid temperature in the infusion channel is higher than the target temperature, the semiconductor electric heating module can enter the second heat conduction state, and the liquid temperature in the infusion channel is conducted to the outside.

[0065] The heat carrier can flow in one direction or in a circulation in the heat flow unit 3, thereby providing or receiving heat conducted from the semiconductor electric heating module 2. Of course, it is not excluded that the heat carrier is relatively stationary in the heat flow unit 3.

[0066] In this embodiment, the material of the infusion tube 1 is graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon, which is a high thermal conductivity material, and there is no specific limitation. The temperature adjustment range of the liquid in the infusion channel 11 is 5-60°C. Here, the temperature adjustment range means that the liquid in the infusion channel 11 can be adjusted to 5°C at the lowest and 60°C at the highest. That is to say, the temperature of the liquid in the infusion channel 11 will not be too high, so as to avoid the infusion tube 1 from melting due to heat, and also avoid the infusion tube 1 from reacting with the liquid inside. The heat flow unit 3 is an annular channel wrapped around the outer periphery of the infusion tube 1, which clamps the semiconductor electric heating module 2 opposite to the infusion tube 1; the heat carrier in the heat flow unit 3 can be water, or other media, as long as the thermal conductivity of the heat carrier is greater than or equal to 100W / (m·K). The longitudinal section of the infusion tube 1 is circular. Of course, the longitudinal section of the infusion tube 1 can also be elliptical, or a shape with an arc structure.

[0067] Specifically, the semiconductor electric heating module 2 enters the first heat conduction state when a forward voltage is applied, and enters the second heat conduction state when a reverse voltage is applied; or, the semiconductor electric heating module 2 enters the second heat conduction state when a forward voltage is applied, and enters the first heat conduction state when a reverse voltage is applied. In other words, when the semiconductor electric heating module 2 is powered on, heat can be transferred from one side of the module to the other side without a temperature difference or when the temperature difference is negative, and the power and direction of the heat flow change with the direction and magnitude of the power-on current, that is, the direction of heat flow can be controlled by the current.

[0068] The semiconductor electric heating module 2 includes a plurality of semiconductor electric heating units 21, which are connected in series. Even if some of the semiconductor electric heating units 21 are damaged or fail, it does not affect the effective use of the semiconductor electric heating module 2. In this embodiment, the semiconductor electric heating unit 21 is arc-shaped, which is attached to the outer wall of the infusion tube 1. There are two semiconductor electric heating units 21, and the two semiconductor electric heating units 21 are connected in series; the semiconductor electric heating module 2 specifically uses bismuth telluride thermal conductive sheet.

[0069] Embodiment 2

[0070] like Figure 2-Figure 4As shown, in this embodiment, the longitudinal section of the infusion tube 1 is a quadrilateral, or a triangle, or a pentagon. Correspondingly, in order to ensure that the semiconductor electric heating module 2 fits the infusion tube 1 and the heat flow unit 3 respectively, the cross section of the heat flow unit 3 is also a quadrilateral ring, or a triangular ring, or a pentagonal ring. At this time, the number of semiconductor electric heating units 21 is the same as the number of sides of the cross section of the infusion tube 1, and they are all connected in series.

[0071] The other structures are the same as those in the first embodiment and will not be described in detail.

[0072] Embodiment 3

[0073] The number of the infusion channel 11 in the infusion tube 1 is one. Figure 5 As shown, it can be a straight channel, such as Figure 7 As shown, it can be a spiral channel, such as Figure 6 As shown, it can be a curved channel.

[0074] Of course, the infusion channel 11 may be partially spiral, partially linear, or partially curved, that is, the specific shape of the infusion channel 11 is not limited, and the infusion channel 11 may include multiple shapes. Preferably, the infusion channel 11 includes a bending section 14 for changing the flow direction of the internal liquid, and the flow direction change here may be changed to a completely opposite direction or to a direction that is angled with the original direction. In other words, when the infusion channel 11 is partially curved or partially spiral, it includes a bending section 14, which is not specifically limited.

[0075] The liquid flow direction inside the infusion channel 11 can be from left to right, or from right to left, or can be first from left to right and then from right to left alternately, that is, the liquid flow direction inside the infusion channel 11 is variable.

[0076] The other structures are the same as those in the first embodiment and will not be described in detail.

[0077] Embodiment 4

[0078] The number of the infusion channels 11 in the infusion tube 1 is not limited, and can be one, or two or more. When there are multiple infusion channels 11, the liquids in at least two of the infusion channels 11 flow in opposite directions.

[0079] like Figure 8 As shown, the infusion tube 1 has three infusion channels 11, wherein the liquid flows in two of the infusion channels 11 in the same direction, and the liquid flows in the other infusion channel 11 in the opposite direction. The end of the infusion tube 1 has a revolving channel 12, which is used to connect the infusion channels 11 with opposite liquid flows. In the above structure, the revolving channel 12 is located outside the end of the infusion tube 1, as shown in FIG. Fig. 9As shown, the revolving channel 12 is located inside the end of the infusion tube 1, that is, at this time, multiple infusion channels 11 are continuously arranged. At this time, the revolving channel 12 can also be formed by the bending section 14 structure.

[0080] exist Figure 8 In the embodiment, the rotary channel 12 and the infusion channel 11 are integrally arranged. Of course, in other embodiments, the rotary channel 12 can also be separately arranged from the infusion channel 11, that is, the infusion channel 11 runs through the entire length direction of the infusion tube 1, and the rotary channel 12 is sealed and plugged into the end of the infusion channel 11.

[0081] like Fig.10 As shown, a cover plate 13 may be provided at the end of the infusion channel 11, and the above-mentioned rotary channel 12 is formed on the cover plate 13. The rotary channel 12 may be entirely located in the cover plate 13. In this case, the cover plate 13 has a relatively large thickness. Alternatively, the rotary channel 12 may be integrally connected to the cover plate 13, and part of it may protrude from the surface of the cover plate 13. The provision of the cover plate 13 reduces the difficulty of processing the rotary channel 12.

[0082] The other structures are the same as those in the first embodiment and will not be described in detail.

[0083] Embodiment 5

[0084] like Figure 11-Figure 15 As shown, one or two or more branch channels 31 and an end cover 32 are provided in the heat flow unit 3 , and the end cover 32 has a circuitous channel for connecting the branch channels 32 .

[0085] Similar to the infusion channel 11 , the branch channel 31 may be a linear channel, a spiral channel or a curved channel.

[0086] The flow directions of the heat carriers in at least two branch channels 32 are opposite, and the circuitous channel is used to connect the branch channels 32 with opposite liquid flow directions.

[0087] Of course, the detour channel may not be provided on the end cover 32 , but may be integrally provided inside or outside the heat flow unit 3 , without any specific limitation.

[0088] When the liquid infusion tube 1 has a cover plate 13 and the heat flow unit 3 has an end cover 32, the cover plate 13 and the end cover 32 can be provided as one piece or separately.

[0089] Embodiment 6

[0090] like Figure 16-18 As shown, a chemical mechanical planarization device includes a polishing table 5, a polishing head 6, a dresser 7, and a grinding liquid delivery arm 4. A grinding pad 51 is placed on the polishing table 5. The grinding liquid delivery arm 4 includes a chemical liquid delivery unit of any one of embodiments 1 to 5.

[0091] When in use, when the semiconductor electric heating module 2 passes a forward current, it will transfer the heat of the circulating water in the heat flow unit 3 to the infusion channel 11 of the infusion tube 1, thereby achieving the purpose of heating the grinding fluid; when the semiconductor electric heating module 2 passes a reverse current, it will transfer the heat of the grinding fluid in the infusion channel 11 to the circulating water in the heat flow unit 3, thereby achieving the purpose of cooling the grinding fluid.

[0092] Specifically, the polishing liquid supply outputs the polishing liquid to the polishing liquid transmission pipeline at a set flow rate, and the polishing liquid reaches the outlet of the polishing liquid delivery arm 4 through the polishing liquid transmission pipeline, and then the polishing liquid falls on a specific position of the polishing pad 51 through the outlet of the polishing liquid delivery arm 4.

[0093] The working process diagram of the grinding liquid temperature control system is as follows Fig.19 As shown, the three temperature sensors are used to detect the temperature of the grinding liquid supply, the outlet of the grinding liquid delivery arm 4 and the grinding pad 51 respectively, and transmit the temperature data to the main temperature control circuit in real time. According to the data of the three temperature detectors and the temperature change mode set by the program, the temperature control circuit controls the magnitude and direction of the current in the semiconductor electric heating module 2 in real time to adjust the power of the semiconductor electric heating unit 21 and thus control the temperature of the liquid in the infusion channel 11, so that the grinding liquid flowing out of the grinding liquid delivery arm 4 meets the temperature change set by the program in the main controller.

[0094] In practical applications, the temperature of the heat carrier in the heat flow unit 3 is selected according to the temperature range to which the grinding liquid needs to be adjusted, or the flow rate of the heat carrier in the heat flow unit 3 is adjusted, or the temperature and flow rate of the heat carrier in the heat flow unit 3 are adjusted.

[0095] The above specific implementation modes are used to explain the present invention rather than to limit the present invention. Any modification and change made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A chemical liquid delivery unit for rapid temperature adjustment, characterized in that: include: an infusion tube, at least one infusion channel being formed inside the tube; The semiconductor electric heating module is arranged outside the infusion tube and at least partially adheres to the outer wall of the infusion tube; The semiconductor electric heating module has a first heat conduction state and a second heat conduction state; When the temperature of the liquid in the infusion channel is lower than the target temperature, the semiconductor electric heating module may enter a first heat conduction state to conduct the external temperature to the liquid in the infusion channel; When the temperature of the liquid in the infusion channel is greater than the target temperature, the semiconductor electric heating module can enter the second heat conduction state, and the temperature of the liquid in the infusion channel is conducted to the outside.

2. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: It also includes a heat flow unit, which has a heat carrier flowing therein and is at least partially in contact with the semiconductor electric heating module, for providing the heat required by the semiconductor electric heating module, or for receiving heat conducted from the semiconductor electric heating module.

3. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: There are multiple infusion channels, and the liquids in at least two of the infusion channels flow in opposite directions.

4. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, 2 or 3, characterized in that: The liquids in at least two infusion channels flow in opposite directions, and the two infusion channels are interconnected.

5. The chemical liquid delivery unit for rapid temperature adjustment according to claim 2, characterized in that: The liquids in at least two infusion channels flow in opposite directions, and the two infusion channels are connected. The infusion tube has a revolving channel, and the revolving channel is used to connect the infusion channels with opposite liquid flows.

6. The chemical liquid delivery unit for rapid temperature adjustment according to claim 5, characterized in that: The infusion tube is provided with a cover plate, and the rotation channel is formed on the cover plate.

7. The chemical liquid delivery unit for rapid temperature adjustment according to claim 5, characterized in that: The infusion channels are continuously arranged, and the rotary channel is located inside the infusion tube.

8. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The number of the infusion channel is one, and the flow direction of the liquid inside the infusion channel is variable.

9. The chemical liquid delivery unit for rapid temperature adjustment according to claim 6, characterized in that: The heat flow unit is provided with one or two or more branch channels and an end cover, wherein the end cover has a circuitous channel for connecting the branch channels.

10. The chemical liquid delivery unit for rapid temperature adjustment according to claim 9, characterized in that: The cover plate and the end cover are integrally arranged; or, the cover plate and the end cover are separately arranged.

11. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1 or 3, characterized in that: The infusion channel is at least partially spiral, or at least partially linear, or the infusion channel at least includes a bending section for changing the flow direction of the internal liquid.

12. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The semiconductor electric heating module enters a first heat conduction state when a forward voltage is applied, and enters a second heat conduction state when a reverse voltage is applied; Alternatively, the semiconductor electric heating module enters the second heat conduction state when a forward voltage is applied, and the semiconductor electric heating module enters the first heat conduction state when a reverse voltage is applied.

13. The chemical liquid delivery unit for rapid temperature adjustment according to claim 2, characterized in that: The heat flow unit is an annular channel wrapped around the outer circumference of the infusion tube, and clamps the semiconductor electric heating module facing the infusion tube.

14. The chemical liquid delivery unit for rapid temperature adjustment according to claim 2, characterized in that: The heat carrier circulates to provide or receive heat conducted from the semiconductor electric heating module.

15. The chemical liquid delivery unit for rapid temperature adjustment according to claim 2 or 13, characterized in that: The thermal conductivity of the heat carrier is greater than or equal to 100 W / (m·K).

16. The chemical liquid delivery unit for rapid temperature adjustment according to claim 2 or 13, characterized in that: The heat carrier is water.

17. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The material of the infusion tube is graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon.

18. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The infusion channel is a linear channel or a curved channel. When the infusion channel is a curved channel, it is a spiral channel.

19. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The longitudinal section of the infusion tube is circular, or elliptical, or has an arc-shaped structure.

20. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The longitudinal section of the infusion tube is polygonal.

21. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The semiconductor electric heating module includes a plurality of semiconductor electric heating units, and the plurality of semiconductor electric heating units are connected in series.

22. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The semiconductor electric heating module is a bismuth telluride thermal conductive sheet.

23. A chemical mechanical planarization device, comprising a polishing table, a polishing head, a dresser, and a polishing liquid delivery arm, characterized in that: The polishing liquid delivery arm includes a chemical liquid delivery unit as described in any one of claims 1-22.

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