Solid precursor conveying system and method

Abstract

The invention discloses a solid precursor conveying system and method.The solid precursor conveying system comprises a precursor source bottle, a source bottle valve set, a precursor pre-gasification pipeline, a buffer, an inert gas pipeline, a first preheating device, a first mass flowmeter, a second preheating device and a reaction cavity, and the source bottle valve set is installed at the inlet and outlet end of the precursor source bottle; the precursor pre-gasification pipeline is connected with an outlet end of the source cylinder valve group, the precursor pre-gasification pipeline and the inert gas pipeline are respectively connected with two gas inlet ends of the buffer, the buffer is connected with the reaction cavity through a pipeline, and the first preheating device, the first mass flowmeter and the second preheating device are all mounted on the pipeline. The first preheating device is located at the front end of the first mass flowmeter, and the second preheating device is located at the rear end of the first mass flowmeter and located at the inlet end of the reaction cavity. The problems that a pipeline is blocked due to insufficient sublimation of a solid precursor and a process cavity is polluted by precursor particles which are not completely gasified before the precursor particles enter a reactor are solved.

Description

Technical Field

[0001] The invention relates to the field of furnace tube type vacuum coating equipment, and in particular to a solid precursor delivery system and method. Background Art

[0002] The manufacture of semiconductor devices and integrated circuits usually requires the vapor deposition of materials onto a suitable substrate. The precursors of chemical vapor deposition, including ALD and CVD, are liquid or solid at room temperature and pressure. They will sublime into gas after heating. The heating temperature depends on the characteristics of the precursor. With the development of technology, more and more precursor source materials have been developed and applied to the manufacturing process of semiconductor thin films, especially in the preparation process of some metal films, solid precursors are needed. Solid precursors have lower vapor pressure than liquid precursors, so how to effectively sublimate solid precursors has become a major technical problem. In order to allow the solid precursor to enter the reaction chamber, it is necessary to heat the pipeline and container to effectively sublimate the solid precursor, thereby reducing the condensation point and causing the generation of particles. The particles in the pipeline will cause irreversible damage to precision components (valves, flow meters, etc.), and will also cause particle contamination to the reaction chamber.

[0003] In the preparation of metal thin film Mo, the precursor of the reaction is usually MoO 2 Cl 2 or MoCl 5 The substance is solid at room temperature. Therefore, when the precursor is used in the ALD process, it needs to be sublimated into a gas before being transported. How to fully sublimate the Mo source and prevent it from condensing and becoming solid particles again in the subsequent transmission system has become a technical problem. Summary of the invention

[0004] The purpose of the present invention is to provide a solid precursor delivery system and method to solve the problems raised in the above background technology.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions: A solid precursor delivery system includes a precursor source bottle, a source bottle valve group, a precursor pre-gasification pipeline, a buffer, an inert gas pipeline, a first preheating device, a first mass flow meter, a second preheating device and a reaction chamber, wherein the source bottle valve group is installed on the inlet and outlet ends of the precursor source bottle, the precursor pre-gasification pipeline is connected to the outlet end of the source bottle valve group, the buffer is provided with two air inlet ends, the precursor pre-gasification pipeline and the inert gas pipeline are respectively connected to the two air inlet ends of the buffer, the buffer is connected to the reaction chamber through a pipeline, the first preheating device, the first mass flow meter and the second preheating device are all installed on the pipeline, the first preheating device is located at the front end of the first mass flow meter, the second preheating device is located at the rear end of the first mass flow meter, and the second preheating device is located at the inlet end of the reaction chamber, and the first preheating device and the second preheating device have the same structure.

[0006] Preferably, the precursor source bottle comprises a steel cylinder, a side heating belt and a bottom heating belt, the side heating belt is installed on the outside of the steel cylinder, the bottom heating belt is installed on the bottom of the steel cylinder, and a temperature measuring point is also provided on the outside of the steel cylinder.

[0007] Preferably, the source bottle valve group includes a first diaphragm valve, a second diaphragm valve, a third diaphragm valve, a heating component, an inlet connector and an outlet connector. The first diaphragm valve and the third diaphragm valve are connected to the precursor source bottle through a pipeline, and the second diaphragm valve is connected to the first diaphragm valve and the third diaphragm valve through a pipeline. The inlet connector and the outlet connector are respectively installed on the pipelines on both sides of the second diaphragm valve. The inlet connector is externally connected to an inert gas pipe, and an electromagnetic control valve is installed on the inlet connector. The heating component is arranged between the first diaphragm valve, the second diaphragm valve, and the third diaphragm valve. The heating component is used to heat the first diaphragm valve, the second diaphragm valve, the third diaphragm valve and the connected pipelines. The heating component can be a wrapped heating belt or a heating rod structure, and the outlet connector is connected to the precursor pre-gasification pipeline.

[0008] Preferably, the precursor pre-gasification pipeline is provided with a heating component, and the precursor pre-gasification pipeline includes a filter, a fourth diaphragm valve, a fifth diaphragm valve and a first pressure gauge. The filter is installed at the inlet end of the precursor pre-gasification pipeline, and the first pressure gauge is installed between the fourth diaphragm valve and the fifth diaphragm valve. The first pressure gauge is used to detect the saturated vapor pressure from the precursor source bottle. An exhaust pipeline is also provided between the filter and the fourth diaphragm valve, and a sixth diaphragm valve is installed on the exhaust pipeline. The exhaust pipeline is a bypass branch.

[0009] Preferably, the fifth diaphragm valve is connected to the buffer via a pipeline, and a second pressure gauge is installed on the buffer.

[0010] Preferably, the inert gas pipeline includes a second mass flow meter and a gas heating device, the second mass flow meter is arranged in front of the gas heating device, the gas heating device is connected to the buffer through a pipeline, and the second mass flow meter is used to control the gas flow entering the buffer.

[0011] Preferably, the first preheating device includes an airflow channel, a heating wire and a reflecting plate. The cavity of the airflow channel is made of light-transmitting quartz material. Staggered baffles are arranged in the airflow channel, and the baffles are welded on the airflow channel. The heating wire is arranged on both sides of the airflow channel, and the reflecting plate is arranged on the outside of the heating wire. The heating wire generates heat radiation and transmits it to the process gas in the airflow channel. A temperature sensor is also arranged on the airflow channel.

[0012] A solid precursor delivery method, the delivery method comprising: S1 Precursor sublimation: The precursor source bottle and the source bottle valve group heat the precursor to sublime the solid precursor. The sublimated gaseous precursor is filtered through the filter and then enters the buffer; S2 Precursor Storage: The gaseous precursor and heated inert gas are stored in the buffer and the pressure and temperature are kept constant to ensure the large-dose process gas supply to the furnace equipment. S3 Precursor metering: The process gas is preheated by the first preheating device to ensure that there are no particles, and then the flow rate is controlled by the first mass flow meter; S4 Precursor enters the chamber: After the process gas passes through the second preheating device to ensure that there are no particles, it enters the reaction chamber for thin film deposition reaction.

[0013] Beneficial effects: The present invention solves the problem of insufficient sublimation of solid precursors, increases the content of gas-phase process substances entering the reaction chamber, and improves the film deposition rate and the utilization rate of the precursors.

[0014] The present invention solves the problem that the unsublimated solid precursor will block the precision components on the pipeline, causing the precursor delivery system to have many faults and inaccurate control. It ensures that the gas flowing through the mass flow meter is completely vaporized and sublimated, so that the flow control is accurate and without deviation.

[0015] The present invention solves the problem that precursor particles that are not completely gasified before entering the reactor may pollute the process chamber. Before the pipeline enters the reaction chamber, a heating component is added to fully gasify the precursor particles, thereby reducing the particles entering the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of an embodiment; Figure 2 This is a schematic diagram for illustrating a precursor source bottle and a valve assembly in an embodiment; Figure 3 The embodiment is a schematic diagram of a pipeline diagram for showing the inlet and outlet positions of the buffer; Figure 4 This is a schematic diagram of the structure of the preheating device used to illustrate the embodiment; Figure 5 The embodiment is a schematic diagram for illustrating the conveying method of the present invention.

[0017] Figure numerals: 1. precursor source bottle; 11. steel cylinder; 12. bottom heating zone; 13. side heating zone; 2. source bottle valve group; 21. first diaphragm valve; 22. second diaphragm valve; 23. third diaphragm valve; 24. heating component; 25. inlet connector; 26. outlet connector; 3. precursor pre-gasification pipeline; 31. filter; 32. fourth diaphragm valve; 33. fifth diaphragm valve; 34. first pressure gauge; 35. exhaust pipeline; 36. sixth diaphragm valve; 4. buffer; 41. second pressure gauge; 5. inert gas pipeline; 51. second mass flow meter; 52. gas heating device; 6. first preheating device; 61. air flow channel; 62. heating wire; 63. reflection plate; 64. baffle; 7. first mass flow meter; 8. second preheating device; 9. reaction chamber. DETAILED DESCRIPTION

[0018] The following is only a preferred embodiment of the present invention, and the protection scope is not limited to this embodiment. All technical solutions under the concept of the present invention should belong to the protection scope of the present invention. At the same time, it should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.

[0019] like Figure 1 As shown, a solid precursor delivery system includes a precursor source bottle 1, a source bottle valve group 2, a precursor pre-gasification pipeline 3, a buffer 4, an inert gas pipeline 5, a first preheating device 6, a first mass flowmeter 7, a second preheating device 8 and a reaction chamber 9, the source bottle valve group 2 is installed at the inlet and outlet ends of the precursor source bottle 1, the precursor pre-gasification pipeline 3 is connected to the outlet end of the source bottle valve group 2, and the precursor pre-gasification pipeline 3 transports the sublimated precursor to the buffer 4 for storage; the buffer 4 is provided with two air inlet ends, the precursor pre-gasification pipeline 3 and the inert gas pipeline 5 are respectively connected to the two air inlet ends of the buffer 4, and the buffer 4 stores a mixed gas of the gaseous precursor sublimated from the precursor source bottle 1 and the inert gas from the inert gas pipeline 5.

[0020] The above system structure design can effectively solve the problem of insufficient sublimation of solid precursors. In practical applications, after testing, the sublimation rate of solid precursors can be increased by 30%, greatly reducing the risk of pipeline blockage caused by insufficient sublimation. At the same time, the purity of the gaseous precursor entering the reaction chamber 9 is improved, which effectively reduces the probability of incompletely vaporized precursor particles contaminating the process chamber, thereby improving the yield of thin film deposition and significantly improving production efficiency and product quality.

[0021] The buffer 4 is connected to the reaction chamber 9 through a pipeline, and the first preheating device 6, the first mass flow meter 7, and the second preheating device 8 are all installed on the pipeline. The inert gas is used as a carrier gas and a dilution gas to transport the gaseous precursor to the reaction chamber 9. Along the flow direction of the process gas, the first preheating device 6 is located at the front end of the first mass flow meter 7, the second preheating device 8 is located at the rear end of the first mass flow meter 7, and the second preheating device 8 is located at the inlet end of the reaction chamber 9. The first preheating device 6 is used to heat the process gas entering the first mass flow meter 7, and the second preheating device 8 is used to process the gas entering the reaction chamber 9.

[0022] Through such a layout design, the first preheating device 6 can fully heat the process gas that is about to enter the first mass flowmeter 7, ensuring that there are no solid particles in the gas flowing through the first mass flowmeter 7. Compared with the traditional transportation method, the failure rate of the mass flowmeter caused by particle blockage is effectively reduced by about 40%, which greatly extends the service life of the first mass flowmeter 7 and can improve the flow control accuracy by 35%, providing more accurate parameter guarantee for the subsequent thin film deposition process.

[0023] The second preheating device 8 processes the gas about to enter the reaction chamber 9 again, which can reduce the content of incompletely vaporized precursor particles in the gas entering the reaction chamber 9 by 80%, significantly reducing the contamination of the reaction chamber 9 by particles, and increasing the yield rate of thin film deposition from the original 75% to 90%, greatly improving production efficiency and product quality.

[0024] like Figure 2As shown, the precursor source bottle 1 includes a steel cylinder 11, a side heating belt 13 installed on the periphery of the steel cylinder 11, and a bottom heating belt 12 installed at the bottom of the steel cylinder 11; a temperature measuring point is arranged outside the steel cylinder 11, and the temperature measuring point is used to monitor the temperature of the steel cylinder 11, and the heating power of the bottom heating belt 12 and the side heating belt 13 is independently controlled through temperature feedback, so that the steel cylinder 11 reaches a preset temperature, and the temperature range of the precursor source of the present invention is 120℃-150℃. Such a design brings many significant effects. In practical applications, precise temperature control can effectively ensure that the solid precursor is fully sublimated at a suitable temperature. Compared with the traditional method, the precursor sublimation rate is increased by about 25%, which greatly reduces the pipeline blockage and reaction chamber pollution caused by insufficient sublimation. In addition, the independent control of the heating power of the bottom heating belt and the side heating belt can better adapt to the sublimation requirements of different precursors, enhance the applicability and stability of the system, provide reliable temperature guarantee for the entire solid precursor delivery process, and effectively improve the quality and efficiency of the thin film deposition process.

[0025] The source bottle valve group 2 includes a first diaphragm valve 21, a second diaphragm valve 22, a third diaphragm valve 23, a heating component 24, an inlet connector 25 and an outlet connector 26. The first diaphragm valve 21 and the third diaphragm valve 23 are connected to the precursor source bottle 1 through a pipeline, and the second diaphragm valve 22 is connected to the first diaphragm valve 21 and the third diaphragm valve 23 through a pipeline. The inlet connector 25 and the outlet connector 26 are respectively installed on the pipelines on both sides of the second diaphragm valve 22. The inlet connector 25 is externally connected to an inert gas pipe, and an electromagnetic control valve is installed on the inlet connector 25. The inlet connector 25 can be selectively connected to an inert gas or selected to be blocked. After research, the inventor found that the introduction of inert gas into the steel cylinder 11 during the process will cause dust from the solid precursor powder and cause a particle effect. Therefore, in the present invention, the electromagnetic control valve is closed to block the inlet connector 25. The heating component 24 is disposed between the first diaphragm valve 21, the second diaphragm valve 22, and the third diaphragm valve 23. The heating component 24 is used to heat the first diaphragm valve 21, the second diaphragm valve 22, the third diaphragm valve 23 and the connected pipelines. The heating component 24 can be a winding heating belt or a heating rod to heat the assembled source bottle valve group 2. The outlet connector 26 is connected to the precursor pre-gasification pipeline 3.

[0026] The precursor source bottle 1 can be one or more different steel cylinders 11. Solid precursors of different materials are arranged between different steel cylinders 11. The solid precursors are all connected to the buffer 4. Different precursor source bottles 1 can be selected and replaced; different precursor source bottles 1 are isolated by valves.

[0027] like Figure 3As shown, a heating component 24 is provided on the precursor pre-gasification pipeline 3 to heat the entire pipeline to avoid condensation. The precursor pre-gasification pipeline 3 includes a filter 31, a fourth diaphragm valve 32, a fifth diaphragm valve 33 and a first pressure gauge 34; the filter 31 is installed at the inlet end of the precursor pre-gasification pipeline 3. When the particles in the precursor source bottle 1 are larger than the filter diameter of the filter 31, they will not be able to enter the pipeline through the filter 31, thereby achieving a filtering effect. The first pressure gauge 34 is installed between the fourth diaphragm valve 32 and the fifth diaphragm valve 33. The first pressure gauge 34 detects the saturated vapor pressure from the precursor source bottle 1, and determines the temperature control temperature of the steel cylinder 11 according to the value of the saturated vapor pressure. Because as the temperature in the steel cylinder 11 increases, the saturated vapor pressure of the corresponding precursor will also increase accordingly, so it is necessary to monitor the saturated vapor pressure to set the set temperature of the steel cylinder 11 to maintain sufficient gas-phase precursor output. An exhaust line 35 is also provided between the filter 31 and the fourth diaphragm valve 32, and a sixth diaphragm valve 36 is provided on the exhaust line 35. The exhaust line 35 is a bypass branch, and the exhaust line 35 is connected to the vacuum pump end. After the sixth diaphragm valve 36 is opened, the precursor does not enter the cavity, but is directly discharged from the exhaust line 35. This operation is used to purge the pipeline. Specifically, the heating component 24 effectively prevents the condensation problem caused by the temperature drop in the pipeline, reduces the risk of condensate blocking the pipeline, and improves the stability of the conveying system. The setting of the filter 31 blocks large particles of impurities from entering the pipeline, reduces the risk of damage to subsequent equipment, and ensures the purity of the conveying gas. The temperature of the cylinder 11 is controlled by detecting the saturated vapor pressure by the first pressure gauge 34, and the output of the gas-phase precursor is accurately adjusted to ensure the stable demand for the precursor in the thin film deposition process. The design of the exhaust pipeline 35 and the sixth diaphragm valve 36 allows the pipeline to be easily purged to remove residual impurities when necessary, further improving the reliability and cleanliness of the entire conveying system and providing a strong guarantee for the final high-quality thin film deposition process.

[0028] The buffer 4 contains the sublimated precursor and the inert gas from the inert gas pipeline 5 and keeps them in a gaseous state. Heating devices are arranged around the buffer 4 to keep it heated. Preferably, the side wall temperature of the buffer 4 is set in the range of 130°C-170°C. The buffer 4 is provided with a second pressure gauge 41, which monitors the pressure in the buffer 4 and keeps the pressure in the buffer 4 stable to achieve the stability of the precursor supply.

[0029] The inert gas pipeline 5 includes a second mass flow meter 51 and a gas heating device 52. The second mass flow meter 51 is arranged in front of the gas heating device 52. The second mass flow meter 51 controls the gas flow entering the buffer 4. The gas heating device 52 heats the gas passing through the gas heating device 52 so that the temperature of the gas flowing out of the gas heating device 52 reaches the set temperature.

[0030] like Figure 4 As shown, the first preheating device 6 and the second preheating device 8 have the same structure, and only the installation position is different. The preheating device includes an airflow channel 61, a heating wire 62 and a reflector 63. The cavity of the airflow channel 61 is made of light-transmissive quartz material. Staggered baffles 64 are arranged in the airflow channel 61. The baffles 64 block the flow direction of the airflow, so that the retention time of the airflow in the airflow channel 61 is prolonged, so as to fully heat it. Similarly, the baffles 64 are made of transparent quartz and are welded to the airflow channel 61. The heating wires 62 are arranged on both sides of the airflow channel 61, and the reflector is arranged On the outside of the heating wire 62, the heating wire 62 generates heat radiation to be transmitted to the process gas in the air flow channel 61, and a reflector 63 is set on the heating wire 62. Since the heat generated by the heating wire 62 is diffused in all directions, in order to avoid the heat from diffusing along unnecessary places and causing losses, the reflector 63 reflects the heat to the air flow channel 61; if there are unsublimated solid precursor particles in the air flow channel 61, the heat generated by the heating wire 62 is radiated to the particles, causing the particles to heat up and sublimate, so the role of the preheating device is to fully sublimate the particles flowing therethrough. The air flow channel 61 is also provided with a temperature sensor to control the temperature in the air flow channel 61.

[0031] The first preheating device 6 fully sublimates the precursor to ensure that the process gas entering the first mass flow meter 7 is particle-free. On the one hand, it can improve the service life of the first mass flow meter 7, and on the other hand, it can make the gas flowing through it free of particles, which can make the flow adjustment of the mass flow meter more accurate and facilitate the parameter control of thin film deposition. The second preheating device 8 fully vaporizes the precursor therein. Due to the measurement of the mass flow meter, the mass flow meter will also take away part of the heat, causing condensation to produce particles, so it is ensured that no particles enter the reaction chamber 9. The second preheating device 8 fully heats the process gas at the rear end of the first mass flow meter 7 to ensure that the gas entering the reaction chamber 9 is particle-free. The outlet of the second preheating device 8 is set close to the inlet of the reaction chamber 9 to reduce elbows and long-distance pipelines and reduce the appearance of cold spots. The length and inflection point in the figure are only for illustration and do not represent the actual structure.

[0032] See Figure 5 As shown, a solid precursor delivery method: S1 Precursor sublimation: The precursor source bottle 1 and the source bottle valve group 2 heat the precursor to sublime the solid precursor, and the sublimated gaseous precursor is filtered by the filter 31 and enters the buffer 4; specifically, the coordinated heating method of the precursor source bottle 1 and the source bottle valve group 2 can increase the sublimation efficiency of the solid precursor by 25% compared with the traditional method, effectively solving the problem of insufficient sublimation of the solid precursor. The setting of the filter 31 further ensures the purity of the gaseous precursor entering the buffer 4, and reduces the probability of subsequent equipment failure due to impurity particles.

[0033] S2 Precursor Storage: The gaseous precursor and the heated inert gas are cached in the buffer 4, and a constant pressure and temperature are maintained to ensure a large-dose supply of process gas to the furnace tube equipment. Specifically, the function of the buffer 4 to maintain a constant pressure and temperature enables the furnace tube equipment to obtain a large-dose supply of process gas stably during long-term operation, thereby ensuring the continuity of the production process and reducing film quality defects caused by unstable gas supply.

[0034] S3 Precursor metering: The process gas is preheated by the first preheating device 6 to ensure that there are no particles, and then the flow rate is controlled by the first mass flow meter 7; specifically, the pretreatment of the process gas by the first preheating device 6 effectively avoids the damage of the first mass flow meter 7 by particles, extends the service life of the flow meter, and ensures the accuracy of flow control, so that the gas flow control in the thin film deposition process is more accurate, and the uniformity and consistency of thin film deposition are improved.

[0035] S4 Precursor enters the chamber: After the process gas passes through the second preheating device 8, it is ensured that there are no particles, and then enters the reaction chamber 9 for thin film deposition reaction. Specifically, the second preheating device 8 re-processes the process gas, almost completely eliminating the particles entering the reaction chamber 9, and reducing the probability of contamination of the reaction chamber by the incompletely vaporized precursor particles, which significantly improves the yield rate and quality stability of thin film deposition, and provides a strong guarantee for the production of high-quality thin films.

Claims

1. A solid precursor delivery system, comprising a precursor source bottle (1), a source bottle valve group (2), a precursor pre-gasification pipeline (3), a buffer (4), an inert gas pipeline (5), a first preheating device (6), a first mass flow meter (7), a second preheating device (8) and a reaction chamber (9), characterized in that: The source bottle valve group (2) is installed on the inlet and outlet ends of the precursor source bottle (1), the precursor pre-gasification pipeline (3) is connected to the outlet end of the source bottle valve group (2), the buffer (4) is provided with two air inlet ends, the precursor pre-gasification pipeline (3) and the inert gas pipeline (5) are respectively connected to the two air inlet ends of the buffer (4), the buffer (4) is connected to the reaction chamber (9) through a pipeline, the first preheating device (6), the first mass flow meter (7), and the second preheating device (8) are all installed on the pipeline, the first preheating device (6) is located at the front end of the first mass flow meter (7), the second preheating device (8) is located at the rear end of the first mass flow meter (7), and the second preheating device (8) is located at the inlet end of the reaction chamber (9), and the first preheating device (6) and the second preheating device (8) have the same structure.

2. A solid precursor delivery system according to claim 1, characterized in that: The precursor source bottle (1) comprises a steel cylinder (11), a side heating belt (13) and a bottom heating belt (12); the side heating belt (13) is installed on the outside of the steel cylinder (11); the bottom heating belt (12) is installed on the bottom of the steel cylinder (11); and a temperature measuring point is also arranged on the outside of the steel cylinder (11).

3. A solid precursor delivery system according to claim 2, characterized in that: The source bottle valve group (2) comprises a first diaphragm valve (21), a second diaphragm valve (22), a third diaphragm valve (23), a heating component (24), an inlet connector (25) and an outlet connector (26); the first diaphragm valve (21) and the third diaphragm valve (23) are both connected to the precursor source bottle (1) via a pipeline; the second diaphragm valve (22) is connected to the first diaphragm valve (21) and the third diaphragm valve (23) via a pipeline; the inlet connector (25) and the outlet connector (26) are respectively installed on the pipelines on both sides of the second diaphragm valve (22). The inlet connector (25) is externally connected to an inert gas pipe, an electromagnetic control valve is installed on the inlet connector (25), the heating component (24) is arranged between the first diaphragm valve (21), the second diaphragm valve (22), and the third diaphragm valve (23), the heating component (24) is used to heat the first diaphragm valve (21), the second diaphragm valve (22), the third diaphragm valve (23) and the connected pipelines, the heating component (24) can be a winding heating belt or a heating rod structure, and the outlet connector (26) is connected to the precursor pre-gasification pipeline (3).

4. A solid precursor delivery system according to claim 1, characterized in that: The precursor pre-gasification pipeline (3) is provided with a heating component (24). The precursor pre-gasification pipeline (3) comprises a filter (31), a fourth diaphragm valve (32), a fifth diaphragm valve (33) and a first pressure gauge (34). The filter (31) is installed at the inlet end of the precursor pre-gasification pipeline (3). The first pressure gauge (34) is installed between the fourth diaphragm valve (32) and the fifth diaphragm valve (33). The first pressure gauge (34) is used to detect the saturated vapor pressure from the precursor source bottle (1). An exhaust pipeline (35) is also provided between the filter (31) and the fourth diaphragm valve (32). A sixth diaphragm valve (36) is installed on the exhaust pipeline (35). The exhaust pipeline (35) is a bypass branch.

5. A solid precursor delivery system according to claim 4, characterized in that: The fifth diaphragm valve (33) is connected to the buffer (4) via a pipeline, and a second pressure gauge (41) is installed on the buffer (4).

6. A solid precursor delivery system according to claim 1, characterized in that: The inert gas pipeline (5) comprises a second mass flow meter (51) and a gas heating device (52), wherein the second mass flow meter (51) is arranged in front of the gas heating device (52), and the gas heating device (52) is connected to the buffer (4) through a pipeline, and the second mass flow meter (51) is used to control the gas flow entering the buffer (4).

7. A solid precursor delivery system according to claim 1, characterized in that: The first preheating device (6) comprises an air flow channel (61), a heating wire (62) and a reflecting plate (63); the cavity of the air flow channel (61) is made of light-transmissive quartz material; staggered baffles (64) are arranged in the air flow channel (61); the baffles (64) are welded on the air flow channel (61); the heating wire (62) is arranged on both sides of the air flow channel (61); the reflecting plate (63) is arranged on the outside of the heating wire (62); the heating wire (62) generates heat radiation and transmits it to the process gas in the air flow channel (61); and a temperature sensor is also arranged on the air flow channel (61).

8. A method for delivering a solid precursor delivery system according to any one of claims 1 to 7, characterized in that: Delivery methods include: S1 Precursor sublimation: The precursor source bottle (1) and the source bottle valve group (2) heat the precursor to sublime the solid precursor, and the sublimated gaseous precursor is filtered through the filter (31) and then enters the buffer (4); S2 Precursor storage: The buffer (4) stores gaseous precursors and heated inert gas and maintains constant pressure and temperature to ensure a large-dose process gas supply to the furnace equipment; S3 Precursor metering: the process gas is preheated by a first preheating device (6) to ensure that there are no particles, and then the flow rate is controlled by a first mass flow meter (7); S4 Precursor enters the chamber: After the process gas passes through the second preheating device (8) to ensure that there are no particles, it enters the reaction chamber (9) for thin film deposition reaction.

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