Horizontal multi-piece multi-material HVPE crystal growing furnace

Abstract

The invention discloses a horizontal multi-piece multi-material HVPE crystal growth furnace. The furnace comprises a furnace body, a fulcrum shaft assembly; a process cover; an air inlet pipe group; a tail gas pipe group; and a transfer manipulator. According to the crystal growth furnace, the process efficiency is relatively high.

Description

Technical Field

[0001] The invention relates to a horizontal HVPE crystal growth furnace, wherein HVPE is the abbreviation of Hydride Vapor Phase Epitaxy, namely hydride vapor phase epitaxy. Background Art

[0002] Most of the horizontal HVPE crystal growth furnaces currently on the market are single-process growth furnaces, and can only grow one material on a process sheet (substrate) at a time, with low production efficiency and relatively low capacity. Since existing HVPE equipment basically cannot meet the needs of growing multiple layers of materials on multiple process sheets, only a single process sheet can grow a single material on a HVPE device to form a functional layer. If the manufacturer has process requirements for growing multiple layers of materials, it can only purchase multiple HVPE equipment that are compatible with the growth of the corresponding functional layers, which is costly, long, and occupies a large area.

[0003] As a research content rather than an industrial realization, a multi-wafer and multi-source horizontal HVPE vapor phase epitaxial growth system was proposed, which has multiple groups of reaction source inlets at one end of the horizontally arranged furnace tube to introduce different reaction sources in time; and an exhaust gas outlet is provided at the other end of the furnace tube. In addition, a reaction zone is constructed in part of the tube section inside the furnace tube. The components for supporting the substrate in the reaction zone are designed to be able to support multiple wafers at the same time. At the same time, the reaction zone is adapted for electromagnetic induction heating so that the heating temperature can be adjusted according to the process conditions in different time periods.

[0004] The process of preparing crystals is divided into several process stages (i.e., processes). After a process is completed, the supply of the reaction source of that process is stopped, and then the exhaust gas is extracted, the temperature of the reaction zone is adjusted to the reaction temperature specified for the next process, and the reaction source of the current process is adapted to enter, and the next process is implemented. This process is repeated in this way, and the preparation of multiple functional layers grown on multiple substrates can be completed in a HVPE crystal growth furnace in a time-sharing manner, and the growth of crystals can be completed in a horizontal HVPE vapor phase epitaxial growth system.

[0005] The above-mentioned multi-wafer multi-source horizontal HVPE vapor phase epitaxial growth system is a relatively good attempt at present, but it should be known that for the horizontal HVPE equipment, the part used to support the multi-wafers needs to have the freedom of lifting and rotating to homogenize the reaction sources entering the reaction zone, so as to form a functional layer with relatively uniform thickness on the substrate. This requires that the surface of the substrate where the functional layer needs to be grown should remain horizontal after the substrate is placed on, for example, a crucible, and the substrate is placed in the crucible in a basically horizontal manner. Adapting to the horizontally placed substrate, the gas pipe head corresponding to the reaction source often needs to distribute gas in a manner perpendicular to the surface of the substrate where the functional layer needs to be grown. If the method of growing multiple wafers at the same time is adopted, it is bound to be unable to meet the method of horizontal placement of the substrate. Therefore, in such implementation methods, multiple substrates are often placed in a parallel arrangement, such as an inclined crucible, and the gas inlet head horizontally inserted into the furnace chamber maintains a predetermined angle with the substrate. In this case, the distance between the multiple substrates and the gas inlet head must be different. In the same process time, the thickness of the corresponding functional layer grown on different substrates is difficult to be consistent. In particular, there is an angle between the air inlet pipe head and the substrate, and it is difficult for the crucible to homogenize the reaction source by rotating. Even for the substrate closest to the pipe head, it is difficult to obtain a functional layer with relatively uniform thickness. Summary of the invention

[0006] The object of the present invention is to provide a horizontal multi-sheet multi-material HVPE crystal growth furnace with relatively high process efficiency.

[0007] According to an embodiment of the present invention, a horizontal multi-wafer multi-material HVPE crystal growth furnace is provided, and its basic structure includes: The furnace body is arranged horizontally, with an air inlet furnace cover at one end and an air outlet furnace cover at the other end, and a plurality of bottom holes are arranged in sequence along the axial direction at the bottom of the furnace body; The support shaft assembly corresponds to the bottom holes one by one, and is inserted into the furnace cavity of the furnace body through the bottom holes in sequence. The upper end of the support shaft assembly has a support part. The corresponding support part of the first support shaft assembly located on the air inlet furnace cover side is a silo support part for supporting the substrate, the first support shaft assembly located on the air outlet furnace cover side is a receiving support part for supporting the finished product, and the remaining support parts are process support parts; A process cover corresponds to the process support part one by one, and a loading space is reserved between the lower end of the process cover and the corresponding process support part when the process support part is at the lower dead point, and the process cover accommodates the crucible therein when the process support part is at the upper dead point; The air inlet pipe group is used to introduce the reaction source, and corresponds to the process cover one by one, is connected from the air inlet furnace cover, and is inserted into the process cover from above the process cover; An exhaust pipe group is used to discharge the exhaust gas, and is inserted into the process hood from one side or two sides and passes through the exhaust furnace cover; and The transfer robot is inserted into the furnace chamber through the exhaust furnace cover or the inlet furnace cover, and the part inserted into the furnace chamber is lower than the process cover and avoids the tail gas pipe group, so as to be used for the circulation of the substrate on the support part.

[0008] In the above growth furnace, optionally, the upper end of the process cover has a cover or an upward closing, and the upward closing means that the diameter of the process cover gradually decreases upward to form a dome with a central hole; Correspondingly, the air inlet pipe group is inserted into the process cover through the cover or is inserted into the process cover through the central hole.

[0009] Optionally, the lower end of the process cover is closed inwards to form a lower lift opening; Correspondingly, the lower lift port is used for the support part to enter and exit the process cover.

[0010] Optionally, the process hood includes: Outer cover; The inner cover is located inside the outer cover and is coaxial with the outer cover, and an annular cavity is formed between the inner cover and the outer cover; the annular cavity is sealed at least at the lower end; Accordingly, the upper end of the inner cover is lower than the supporting surface when the supporting part is at the top dead point; The tail gas pipe group is in communication with the annular cavity; The upper end of the annular cavity is open to form an annular gap and / or the inner cover is provided with air guide side holes.

[0011] Optionally, the inner surface of the inner cover gradually decreases from the top to the middle, and becomes a constant diameter portion or gradually expands from the middle downward; Correspondingly, the air guide side holes are opened at the upper part of the inner cover.

[0012] Optionally, a guide plate is provided on the inner surface of the outer cover above the annular gap, the guide plate is connected from the inner surface of the outer cover and tilted downward, and the tangent line of the upper surface end of the guide plate intersects with the upper end of the inner cover.

[0013] Optionally, the exhaust pipe group includes two, each exhaust pipe group includes a main pipe and a branch pipe; The main pipe is offset on both sides of the furnace chamber, and the corresponding branch pipes are connected with the inner space of the process cover from the side.

[0014] Optionally, two branch pipes are adapted for each process hood, with one branch pipe each being provided on both sides of the process hood.

[0015] Optionally, an independent vacuum pipe joint is also provided on the tail gas furnace cover to connect to a vacuum system.

[0016] Optionally, different process support parts have different top dead points; Provide independent heating module for each process hood.

[0017] According to the embodiment of the present invention, the horizontal multi-piece multi-material HVPE crystal growth furnace is provided with a plurality of bottom holes along the axial direction of the bottom of a furnace body, and the bottom holes are used for the installation of the support shaft assembly. It should be known that for the horizontal HVPE crystal growth furnace, the support shaft assembly is used to support, for example, a crucible support, which has two degrees of freedom, namely, the degree of freedom of rotation and the degree of freedom of lifting and lowering. The degree of freedom of lifting and lowering must correspond to the upper dead point and the lower dead point. The upper dead point and the lower dead point determine the working stroke corresponding to the degree of freedom of lifting and lowering. The upper dead point usually corresponds to the process position, and the lower dead point usually corresponds to the loading and unloading position. In the embodiment of the present invention, there is a silo support part, a material receiving support part, and several process support parts. The process support part is adapted to be equipped with a process cover to construct an independent reaction zone. The reaction source enters from the top of the process cover, so that it can ensure that the substrate is placed horizontally, which is the same as the traditional horizontal HVPE crystal growth furnace, so as to ensure that the growth quality of the substrate is easy to control. The tail gas generated by the reaction is drawn away by the tail gas pipe group located at the bottom of the process cover, and has no effect on the remaining reaction zones. Furthermore, at the beginning of the process, the transfer robot first picks up a substrate from the silo support and sends it to the first process support to start the growth of the first functional layer. After the growth is completed, the first process support moves down to its position, and the transfer robot transfers the substrate to the next process support, and then picks up the next substrate from the silo support and sends it to the first process support. At this time, there will be a substrate on each of the two stations. The substrate on the first process support grows the first functional layer, and the substrate on the second process support grows the second functional layer. Under the protection of their respective process covers, they can be carried out simultaneously without affecting each other, so that the process of multiple crystals can be carried out in a horizontal HVPE crystal growth furnace, and the efficiency is greatly improved. In addition, the presence of the process cover can confine the reaction source to a relatively small area, and it is easier to ensure the growth quality of the functional layer on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the main cross-sectional structure of a horizontal multi-wafer and multi-material HVPE crystal growth furnace in one embodiment.

[0019] Figure 2 It is a schematic diagram of the left cross-section structure of a horizontal multi-wafer multi-material HVPE crystal growth furnace in one embodiment.

[0020] Figure 3 It is a schematic diagram of the three-dimensional structure of the process cover in one embodiment.

[0021] Figure 4 It is a schematic diagram of a half-section structure of a process cover in one embodiment.

[0022] In the figure: 1. Inlet furnace cover, 2. Sealing ring, 3. First process gas inlet pipe group, 4. Heating module, 5. First process cover, 6. Second process gas inlet pipe group, 7. Second process cover, 8. Third process gas inlet pipe group, 9. Third process cover, 10. Vacuum pipe joint, 11. Outlet furnace cover, 12. Transfer robot, 13. Tail gas exhaust main pipe, 14. Tail gas exhaust branch pipe, 15. Material collection assembly, 16. Material collection quartz branch pipe, 17. Third process position support shaft Assembly, 18. Third quartz branch pipe, 19. Second process position support shaft assembly, 20. Second quartz branch pipe, 21. Furnace chamber, 22. First process position support shaft assembly, 23. First quartz branch pipe, 24. Silo assembly, 25. Silo quartz branch pipe, 26. Quartz tube, 27. Heating body, 28. Furnace body, 29. Air outlet pipe interface, 30. Outer cover, 31. Air guide side hole, 32. Inner cover, 33. Annular bottom plate, 34. Annular cavity, 35. Annular seam, 36. Guide plate. DETAILED DESCRIPTION

[0023] The main body of the horizontal HVPE crystal growth furnace is a rotating body structure, and the axis of the furnace body of the rotating body structure is horizontal based on the horizontal position. The axial direction of the furnace body is its basic direction, and in the embodiment of the present invention, the flow direction of the workpiece (substrate) between process positions is the axial direction of the furnace body, and the flow usually has a certain front and back, such as the previous process position and the next process position, which are often defined based on the process flow. Therefore, in the embodiment of the present invention, the axial direction is also expressed as front and back.

[0024] Correspondingly, up and down can be determined based on the rise and fall, and after the front and back and up and down are determined, the left and right are also determined. And under conventional conditions, the left and right directions are also called lateral directions and transverse directions. The front and back directions are also called longitudinal directions and lengthwise directions.

[0025] Regarding the furnace body, it usually includes a metal shell and an insulating lining installed in the metal shell. The metal shell and the insulating lining mainly constitute the furnace body. A quartz tube 26 is also provided in the furnace body to construct a regular furnace chamber 21. The part used to heat the space in the quartz tube 26 is often installed on the insulating lining. Induction heating or thermal radiation heating can be used.

[0026] exist Figure 1 In the illustrated structure, a vacuum pipe joint 10 is provided on the gas outlet furnace cover 11 for extracting the air in the furnace chamber 21 and then flushing in argon gas, for example.

[0027] For the reaction source, an inert gas is generally used as a carrier gas, and the powdered reaction source is introduced, which can also be called a reaction gas as a whole. This is common knowledge in the art and does not belong to the improvement of the present invention, so it will not be repeated here.

[0028] For a conventional horizontal HVPE crystal growth furnace, a bottom hole is usually opened at the bottom of the furnace body, and then a small quartz tube (used to distinguish the quartz tube 26 constituting the furnace tube in the name) is connected from the bottom hole for installing the support shaft assembly, which generally has two degrees of freedom: lifting and rotating. In the embodiment of the present invention, the support shaft assembly with two process positions (usually referred to as workstations in the mechanical field) does not need to have a rotational degree of freedom, but only needs to be configured with a lifting degree of freedom, that is, Figure 1 The support shaft of the silo assembly 24 and the support shaft of the material receiving assembly 15 shown in the figure only need to be configured with the lifting freedom.

[0029] Similarly, the configuration of the small quartz tube is also common knowledge in the field. In the embodiments of the present invention, the only change is in quantity compared with the prior art, and does not involve changes in the matching relationship between the small quartz tube and the support shaft assembly, which will not be repeated here.

[0030] In the following, for the convenience of description, the horizontal multi-wafer and multi-material HVPE crystal growth furnace is referred to as a growth furnace. It should be noted that in the embodiments of the present invention, the growth furnace specifically refers to a horizontal HVPE crystal growth furnace, and is a growth furnace capable of realizing the growth of multiple wafers and multiple materials.

[0031] In addition, regarding other configurations of the furnace body, both ends of the furnace body are equipped with furnace covers, such as Figure 1 As shown in the figure, the air inlet furnace cover 1 and the air outlet furnace cover 11, correspondingly, the air inlet furnace cover 1 and the air outlet furnace pipe 11 are provided with through holes for the configuration of related pipelines. The cooperation between the pipeline and the furnace cover is a static sealing cooperation, which is relatively simple to implement and belongs to the common sense in this field, and will not be repeated here.

[0032] exist Figure 1 In the illustrated structure, there are five small quartz tubes, namely the silo quartz branch tube 25 corresponding to the silo assembly 24, the first quartz branch tube 23 corresponding to the first process position support shaft assembly 22, and so on. The figure shows it clearly and will not be introduced one by one.

[0033] The support shaft assemblies corresponding to the silo assembly 24 and the material receiving assembly 15 only need to be able to rise and fall, while the support shaft assemblies corresponding to the process positions need to have the freedom of rotation. Relatively speaking, the support shaft assembly with the freedom of rotation is the currently commonly used support shaft assembly, and the support shaft assembly used by the material receiving assembly 15 and the silo assembly 24 is unique to the embodiment of the present invention. However, it should be known that it is easier to achieve with one less degree of freedom, which is foreseeable based on the existing technology and will not be elaborated here.

[0034] Regarding each support shaft assembly, in the initial state, they can all be at the bottom dead point position to avoid motion interference with the transfer robot 12 shown in the figure, and during loading and unloading, the support shaft assemblies at least three process positions need to be reset to the bottom dead point to avoid motion interference. However, it should also be known that if motion interference can be avoided even without resetting, the corresponding support shaft assembly may not be reset.

[0035] based on Figure 1 It can be seen from the illustrated structure that the growth of three functional layers is realized in the figure, and the three functional layers are obviously stacked in sequence. If more functional layers need to be grown, the corresponding workstations can be added. Under this condition, in the initial stage, the reaction zone in the process cover of only one process position is in a working state, and then gradually the reaction zones in all process covers are in a working state, thereby achieving relatively efficient crystal preparation.

[0036] Another point that needs to be explained is that the gas supply to the reaction source does not have a very high flow rate. Therefore, the upper air intake and lower air exhaust method alone can completely prevent the reaction source in the current process cover from diffusing into other process covers, thereby ensuring the cleanliness of the generated functional layer.

[0037] Correspondingly, the support shaft assembly corresponds to the bottom hole one by one, and is inserted into the furnace cavity of the furnace body through the bottom hole in turn. The upper end of the support shaft assembly has a support portion. As mentioned above, the support portion can be a crucible support that can be placed in the reaction zone, or it can be other support portions located outside the reaction zone, such as the silo assembly 24, which is only used to support the substrate without being inserted into the reaction zone.

[0038] In terms of positional relationship, the silo support portion on the silo assembly 24 is located on the side where the air inlet furnace cover 1 is located, and the material receiving support portion on the receiving assembly 15 is located on the side where the air outlet furnace cover 11 is located. Except for these two support portions, the remaining support portions are collectively referred to as process support portions.

[0039] When the process support is at the top dead point, the process cover is covered by the process cover, which is used to provide a relatively semi-enclosed space to construct a reaction zone. The reaction zone is mainly located in the area where the substrate is located when the process support is at the top dead point. Figure 1 It can be seen that the three process supports are all at the top dead center. For example, the first process gas inlet pipe group 3 penetrates into the first process cover 5, and the penetration depth is about half of the height of the first process cover 5, which can effectively reduce the impact on the atmosphere outside the first reaction zone.

[0040] Calculated from the insertion direction, for example, the depth of the first process gas inlet pipe group 3 inserted into the first process cover 5 should not be less than one-third of the height of the first process cover 5, and should not be greater than two-thirds of the first process cover 5. Too large an insertion depth will inevitably affect, for example, the amount of involvement of the first process support in the first process cover 5, as well as the uniform gas space.

[0041] It should be noted that regarding gas homogenization, in this field it is often necessary to configure a special gas homogenization device rather than direct supply through pipelines. This is common knowledge in this field and will not be elaborated here. The diagram is only used to schematically show the supply of the process source rather than the engineering structure.

[0042] It should be known that in the art, a single-process horizontal HVPE crystal growth furnace does not need to be equipped with a process cover, and the supply and uniformity of the process source are not limited by the external cover, but only by, for example, the quartz tube 26. Relatively speaking, when a process cover is used, the diffusion range of the reaction gas can be effectively restricted, which is more conducive to improving the effective utilization of the reaction source.

[0043] Correspondingly, the process cover corresponds to the process support part one by one, and a loading space is reserved between the lower end of the process cover and the corresponding process support part when it is at the lower dead point for loading and unloading materials.

[0044] Meanwhile, the process cover accommodates the carried crucible therein when the process support portion is at the upper dead point.

[0045] Regarding the intake pipe group, such as Figure 1 As shown, the pipe runs from the top of the process hood and has a downwardly extending pipe section through a bend. The downwardly extending pipe section is inserted into the process hood, and the insertion position can be adapted according to the gas supply and gas uniformity. This is common knowledge in the field and will not be repeated here.

[0046] In the embodiment of the present invention, two exhaust pipe groups are provided to guide the exhaust gas from the left and right sides and avoid interference with the transfer robot 12 and each support shaft assembly.

[0047] In some implementations, only one exhaust pipe group may be configured. Under this condition, the exhaust gas needs to be fully converged and it is preferred to use Figure 3 and Figure 4 The process hood shown is used to converge the exhaust gas.

[0048] Figure 1 In the embodiment, the air inlet pipe group penetrates through the air inlet furnace cover 1, and the tail gas pipe group penetrates through the air outlet furnace cover 11.

[0049] The transfer robot 12 can be inserted into the furnace cavity 21 through the air outlet furnace cover 11, and can also be inserted into the furnace cavity through the air intake furnace cover 1. Since the number of pipes in the exhaust pipe group is relatively small, while the number of pipes in the air intake pipe group is relatively large, it is preferred to insert the transfer robot 12 into the furnace cavity 21 through the air outlet furnace cover 11, which can reduce position interference and reduce design difficulty.

[0050] The transfer robot 12 usually only has the axial freedom of the furnace body. In fewer applications, the end of the transfer robot 12 also has the freedom to rise and fall. However, in order to reduce the difficulty of designing the transfer robot 12, its position is limited in advance, that is, the part of the transfer robot 12 that intervenes in the furnace chamber 21 is lower than the process cover, and at the same time higher than the upper edge of the supported object when each support shaft assembly is at the lower dead point, and avoids the exhaust pipe group to facilitate the circulation of the substrate on the support.

[0051] exist Figure 1 , 3 In the structures shown in Figure 4, the upper end of the process cover is open to reduce the impact on the heating module 4, but in some implementations, the upper end of the process cover can also be sealed, for example, using a cover for sealing, and a hole is opened on the cover for the intervention of the corresponding pipeline. Under this condition, the heating module is mainly heated by induction. For the upper end of the open process cover, thermal radiation heating can be used.

[0052] In addition, the cover itself can be transparent and have relatively little effect on thermal radiation heating.

[0053] As another way, the upper end of the process cover can be a structure that closes upward, which is referred to as the upper closing. Figure 1 , 3 As can be seen from the structure shown in Example 4, the upward closing means that the diameter of the process hood gradually decreases upward to form a dome with a central hole. The upward diffusion of the process source will encounter certain obstacles, which is conducive to the downward diffusion of the process source in conjunction with the suction of the exhaust pipe group.

[0054] Correspondingly, the air inlet pipe group is inserted into the process cover through the cover or is inserted into the process cover through the central hole.

[0055] exist Figure 1 , Figure 3 and Figure 4 In the illustrated structure, the lower end of the process hood closes inward to form a lower lift port, which is conducive to the convergence of exhaust gas and avoids or reduces the amount of exhaust gas diffusing to other locations of the furnace chamber 21.

[0056] Correspondingly, the lower lift opening is used for the support part to enter and exit the process cover, or in other words, it only needs to meet the need for the corresponding support part to enter and exit, and under this condition, it can be as small as possible.

[0057] As a structure suitable for exhaust gas confluence, see Figure 3 and Figure 4 , the process cover comprises: Outer cover 30; The inner cover 32 is located inside the outer cover 30 and is coaxial with the outer cover 30, and an annular cavity 34 is formed between the inner cover 32 and the outer cover 30; the annular cavity 34 is sealed at least at the lower end, such as Figure 3 and4 In the figure, the lower end of the annular cavity 34 is sealed with an annular bottom plate 33. The sealing can also be expressed as the inner cover 32 and the outer cover 30 are connected as a whole using the annular bottom plate 33. In addition, there can be other connecting structures between the inner cover 32 and the outer cover 30, such as an upper annular plate used to seal the upper end of the annular cavity 34.

[0058] exist Figure 3 and Figure 4 In the illustrated structure, two air outlet pipe interfaces 29 are formed on the annular bottom plate 33 for connection with the exhaust gas extraction branch pipe 14 .

[0059] Accordingly, the two air outlet pipe structures 29 can be located on the annular bottom plate 33 , or can be directly opened on the cover body of the outer cover 32 that defines the annular cavity 34 .

[0060] Obviously, the two air outlet pipe interfaces 29 should be located on the left and right sides of the process cover in terms of positional relationship.

[0061] Accordingly, the upper end of the inner cover 32 is lower than the supporting surface when the supporting portion is at the top dead point, thereby reducing the direct impact on the atmosphere of the reaction zone, that is, reducing excessive disturbance to the atmosphere of the reaction zone.

[0062] exist Figure 4 It can be clearly seen that there are two main structures for collecting exhaust gas. One is that the upper end of the annular cavity 34 is open, and the other is that there are gas guide side holes 31 in a circular array on the inner cover 32. The coexistence of these two methods can minimize the diffusion of exhaust gas outside the process cover.

[0063] If the exhaust pipe group has a relatively strong suction capacity, one of the above two structures for collecting exhaust gas can be selected, but this will cause greater disturbance to the atmosphere in the reaction zone. Therefore, it is still preferred to construct the annular seam 35 and open the side air guide hole 31 on the inner cover 32 at the same time.

[0064] exist Figure 3 and Figure 4 In the illustrated structure, the side air guide holes 31 have only one circle, while in other embodiments, multiple circles may be provided, but it is preferred to have only one circle.

[0065] exist Figure 3 and Figure 4 In the illustrated structure, the inner surface of the inner cover 32 gradually decreases from the top to the middle, and becomes a constant diameter portion or gradually expands from the middle to the bottom, so as to facilitate the collection of exhaust gas.

[0066] From Figure 1 and Figure 2 As can be seen in the figure, the number of tail gas pipe groups is less than the number of process gas pipe groups. The tail gas exhaust main pipe 13 shown in the figure can be provided with two, and one is provided on the left and right sides of the middle and lower part of the furnace body.

[0067] The tail gas extraction main pipe 13 is a connecting pipe, and the tail gas extraction branch pipes 14 are used to be connected from the corresponding process hoods and connected to the tail gas extraction main pipe 13.

[0068] Correspondingly, the air guide side hole 31 is opened at the upper part of the inner cover.

[0069] In addition, Figure 4 As can be seen from the illustrated structure, a guide plate 36 is provided on the inner surface of the outer cover 30 above the annular gap 35. The guide plate 36 is connected to the inner surface of the outer cover 30 and tilted downward, and the tangent line of the upper surface end of the guide plate 36 intersects with the upper end of the inner cover.

[0070] In order to reduce the interference of pipe routing, the top dead point of the support part is different for different processes; thus presenting the following Figure 1 The process covers shown in the figure are arranged in stages at the setting heights, so that the air inlet pipe groups corresponding to the process covers are staggered.

[0071] In addition, an independent heating module 4 is provided for each process hood.

Claims

1. A horizontal multi-sheet multi-material HVPE crystal growth furnace, characterized in that: include: The furnace body is arranged horizontally, with an air inlet furnace cover at one end and an air outlet furnace cover at the other end, and a plurality of bottom holes are arranged in sequence along the axial direction at the bottom of the furnace body; The support shaft assembly corresponds to the bottom holes one by one, and is inserted into the furnace cavity of the furnace body through the bottom holes in sequence. The upper end of the support shaft assembly has a support part. The corresponding support part of the first support shaft assembly located on the air inlet furnace cover side is a silo support part for supporting the substrate, the first support shaft assembly located on the air outlet furnace cover side is a receiving support part for supporting the finished product, and the remaining support parts are process support parts; A process cover corresponds to the process support part one by one, and a loading space is reserved between the lower end of the process cover and the corresponding process support part when the process support part is at the lower dead point, and the process cover accommodates the crucible therein when the process support part is at the upper dead point; The air inlet pipe group is used to introduce the reaction source, and corresponds to the process cover one by one, is connected from the air inlet furnace cover, and is inserted into the process cover from above the process cover; The tail gas pipe group is used to guide the tail gas, and is inserted into the process cover from one side or both sides, and passes through the exhaust furnace cover; as well as The transfer robot is inserted into the furnace chamber through the exhaust furnace cover or the inlet furnace cover, and the part inserted into the furnace chamber is lower than the process cover and avoids the tail gas pipe group, so as to be used for the circulation of the substrate on the support part.

2. The growth furnace according to claim 1, characterized in that: The upper end of the process cover has a cover or an upward closing, and the upward closing means that the diameter of the process cover gradually decreases upward to form a dome with a central hole; Correspondingly, the air inlet pipe group is inserted into the process cover through the cover or is inserted into the process cover through the central hole.

3. The growth furnace according to claim 1 or 2, characterized in that: The lower end of the process cover is closed inwards to form a lower lift opening; Correspondingly, the lower lift port is used for the support part to enter and exit the process cover.

4. The growth furnace according to claim 3, characterized in that: The process cover includes: Outer cover; The inner cover is located inside the outer cover and is coaxial with the outer cover, and an annular cavity is formed between the inner cover and the outer cover; the annular cavity is sealed at least at the lower end; Accordingly, the upper end of the inner cover is lower than the supporting surface when the supporting part is at the top dead point; The tail gas pipe group is in communication with the annular cavity; The upper end of the annular cavity is open to form an annular gap and / or the inner cover is provided with air guide side holes.

5. The growth furnace according to claim 4, characterized in that: The inner surface of the inner cover gradually decreases from the top to the middle, and becomes a constant diameter portion or gradually expands from the middle downward; Correspondingly, the air guide side holes are opened at the upper part of the inner cover.

6. The growth furnace according to claim 4, characterized in that: A guide plate is arranged above the annular gap on the inner surface of the outer cover. The guide plate is connected to the inner surface of the outer cover and tilted downward, and the tangent line of the upper surface end of the guide plate intersects with the upper end of the inner cover.

7. The growth furnace according to claim 1, characterized in that: The exhaust pipe groups include two, each exhaust pipe group includes a main pipe and a branch pipe; The main pipe is offset on both sides of the furnace chamber, and the corresponding branch pipes are connected with the inner space of the process cover from the side.

8. The growth furnace according to claim 7, characterized in that: Two branch pipes are adapted for each process hood, one of which is provided on each side of the process hood.

9. The growth furnace according to claim 1, characterized in that: An independent vacuum pipe joint is also provided on the tail gas furnace cover to connect to the vacuum system.

10. The growth furnace according to claim 1, characterized in that: Different processes have different top dead points for the support parts; Provide independent heating module for each process hood.

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