A low-stress leadless packaging component for a high-temperature sensitive chip and its fabrication method

Abstract

The application provides a low-stress leadless packaging assembly of a high-temperature sensitive chip and a preparation method thereof, and comprises a high-temperature sensitive chip, conductive paste, conductive pins, a glass base and a metal shell. The glass conductive paste containing metal PbO-ZnO-B2O3 system is used to realize leadless electrical signal connection, and the problem of poor impact resistance and high-temperature failure of conventional metal leads is solved; the sealing layer is avoided, and the sintering process is innovatively used to realize reliable fixed connection of the high-temperature sensitive chip and the glass base, so that the thermal stress is greatly reduced; the flush structure is used to realize packaging of the high-temperature sensitive chip, the tube cavity effect of packaging is avoided, and good dynamic response characteristics are achieved; the packaging structure adopts the metal shell, has strong universality, can be welded with a connecting base of any threaded mounting interface, and meets the mounting requirements of users on the sensor. The packaging structure and the preparation method are simple, and can improve the medium compatibility, adaptability to harsh environments and reliability of the sensor.

Description

TECHNICAL FIELD

[0001] The application relates to a low-stress leadless packaging assembly of a high-temperature sensitive chip and a preparation method thereof, and belongs to the technical field of high-temperature sensitive chip packaging. BACKGROUND

[0002] In the field of high-temperature measurement, many high-temperature sensitive chips have not been practically applied as products, and the main reason is that the packaging problem under harsh conditions such as high temperature has not been solved. The packaging of the sensitive chip often involves the combination and fixation of multiple materials. Due to the inconsistency of the thermal expansion coefficients of heterogeneous materials, thermal stress is very easy to cause output deviation at high temperatures. In addition, in the traditional packaging, the signal of the sensitive chip is usually led to the packaging structure by wire bonding. The disadvantage of this leaded packaging method is that it can only be applied to the measurement environment of insulating medium, and in harsh environments, the metal lead will have many problems such as oxidation and resistance increase.

[0003] CN109781334B discloses a leadless packaging structure of a piezoresistive sensor, which proposes to use a composite sealing glass as a first transition layer for bonding the sensitive chip to reduce the internal thermal stress of the packaging structure. In order to match the thermal expansion coefficients of the materials, the first transition layer is introduced, which has very high requirements for the materials and complex packaging process, and is difficult to be practically applied.

[0004] CN114132885A discloses a leadless packaging structure and method of a high-temperature resistant sensor, which proposes to bond the sensor sensitive chip by using a sealing layer, process a chip packaging groove and a through hole on the base to obtain a sensor shell. The sealing layer is introduced in the application, which requires the thermal expansion coefficients of the materials to be consistent, making it difficult to realize the packaging, and the sensor shell material is an insulating material, making the preparation of the whole sensor complex. SUMMARY

[0005] The technical problem of the application is to overcome the shortcomings of the prior art, provide a low-stress leadless packaging assembly of a high-temperature sensitive chip and a preparation method thereof, expand the application field of the sensor, and improve the measurement medium compatibility, harsh environment adaptability and reliability thereof.

[0006] The technical solution of the application is: in a first aspect, a low-stress leadless packaging assembly of a high-temperature sensitive chip is provided, which comprises: a high-temperature sensitive chip, a conductive paste, a conductive pin, a glass base and a metal shell, wherein:

[0007] The high-temperature sensitive chip is bonded by two layers of chips, a through hole for the conductive pin to pass through is arranged on the second layer of chips, and the through hole is filled with the conductive paste; an area on the first layer of chips corresponding to the through hole is provided with an electrode;

[0008] One end of the conductive pin passes through the through hole on the high-temperature sensitive chip, and is sintered in the through hole by the conductive paste and the electrode to realize the electrical signal connection between the electrode of the high-temperature sensitive chip and the conductive pin.

[0009] The glass base is provided with a through hole for the conductive pin to pass through, the conductive pin is sleeved from the suspended end, and the second layer of the high-temperature sensitive chip is contacted;

[0010] The metal shell is sleeved on the periphery of the glass base, and the upper end surface of the metal shell is flush with the high-temperature sensitive chip.

[0011] The high-temperature sensitive chip, the glass base and the metal shell which have realized the electrical signal connection are sintered to form an integral whole.

[0012] Preferably, the through hole is a circular truncated cone structure with a narrow upper end and a wide lower end, and the upper end of the through hole in contact with the first layer of the chip is defined as the upper end, and the diameter of the lower end surface is greater than the diameter of the conductive pin;

[0013] The through hole is prepared by sand blasting, laser processing or mechanical drilling.

[0014] Preferably, the conductive paste is filled into the through hole of the high-temperature sensitive chip by precise dispensing, and the filling amount of the conductive paste is 2 / 3 of the volume of the through hole.

[0015] Preferably, the material of the high-temperature sensitive chip is selected from silicon carbide, high-temperature glass or sapphire;

[0016] The conductive paste is a PbO-ZnO-B2O3 system glass conductive paste containing metal;

[0017] The material of the conductive pin and the metal shell is the same, which is Kovar alloy or stainless steel;

[0018] The material of the glass base is PbO-ZnO-B2O3 system glass powder, which is formed by pressing.

[0019] Preferably, the metal shell of the low-stress leadless packaging assembly of the high-temperature sensitive chip can be assembled and welded with the cylindrical connecting base to form a low-stress leadless packaging sensor of the high-temperature sensitive chip.

[0020] In the second aspect, a preparation method of a low-stress leadless packaging assembly of a high-temperature sensitive chip is provided, comprising:

[0021] S1, filling the conductive paste into the through hole of the high-temperature sensitive chip;

[0022] S2, placing the high-temperature sensitive chip filled with the conductive paste on the groove of the tool, and the through hole of the high-temperature sensitive chip faces upward;

[0023] S3, design and assemble the tool, and insert the conductive pin into the via filled with the conductive paste by using the tool;

[0024] S4, place the conductive paste in the sintering furnace for solidification, and remove and take out the tool and the assembly tool after the solidification process is completed;

[0025] S5, assemble the high-temperature sensitive chip, the glass base and the metal shell which have realized the electrical signal connection, and place them in the sintering furnace to form a whole;

[0026] S6, take out from the sintering furnace, that is, realize the low-stress leadless packaging assembly of the high-temperature sensitive chip.

[0027] Preferably, the tool is a square or cuboid structure, and the upper end face is processed with a groove matched with the size of the high-temperature sensitive chip and an annular groove matched with the assembly tool.

[0028] Preferably, the assembly tool is a cylindrical structure, and is processed with pin holes matched with the diameter of the conductive pin, and the number and position of the pin holes correspond to the via of the high-temperature sensitive chip;

[0029] Along the center position of the pin hole, a part of the cylindrical structure is removed to leave a cylindrical bottom matched with the annular groove of the tool, and the remaining pin hole is an open cross section to facilitate observation under a microscope after assembly whether the conductive pin enters the via of the high-temperature sensitive chip.

[0030] Preferably, when the conductive pin is inserted into the via filled with the conductive paste by using the tool:

[0031] The cylindrical bottom of the assembly tool is aligned into the annular groove of the tool, and then the conductive pin is inserted into the via of the high-temperature sensitive chip through the pin hole of the assembly tool to contact the conductive paste and the electrode.

[0032] Preferably, after the low-stress leadless packaging assembly of the high-temperature sensitive chip is completed, laser welding is adopted to weld the low-stress leadless packaging assembly of the high-temperature sensitive chip and the connecting base, and the preparation of the leadless packaging sensor is completed.

[0033] Compared with the prior art, the present application has the following advantages:

[0034] (1) The present application realizes leadless electrical signal connection by using the PbO-ZnO-B2O3 system glass conductive paste with the same thermal expansion coefficient as the high-temperature sensitive chip and the glass base and containing metal, which solves the problem of poor impact resistance and high-temperature failure of conventional metal leads;

[0035] (2) The application directly uses a sintering process to realize reliable fixed connection of the high-temperature sensitive chip and the glass base, avoids using a sealing layer, has simple process, greatly reduces thermal stress, and avoids the problem of poor sensor measurement accuracy caused by thermal expansion mismatch of multiple materials;

[0036] (3) The application uses a flush packaging structure to realize packaging of the high-temperature sensitive chip, avoids the tube cavity effect of packaging to reduce the natural frequency, and makes the sensor have good dynamic response characteristics;

[0037] (4) The packaging structure of the application adopts a metal shell, has strong universality, can be welded with a connection base of any threaded mounting interface, and meets the mounting requirements of the user on the sensor;

[0038] (5) The application realizes leadless packaging preparation of the high-temperature sensitive chip, has simple process, is easy to realize, can improve the medium compatibility, adaptability to harsh environments and reliability of the sensor, and expands the application field thereof. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 It is a low-stress leadless packaging assembly structure of the high-temperature sensitive chip of the application;

[0040] Figure 2 It is a high-temperature sensitive chip structure suitable for leadless packaging of the application;

[0041] Figure 3 It is a structure diagram for realizing leadless assembly of the high-temperature sensitive chip and the conductive pin of the application;

[0042] Figure 4 It is a structure diagram of a leadless packaging sensor of the application;

[0043] Figure 5 It is a flow chart of the low-stress leadless packaging assembly, the sensor and the preparation method of the high-temperature sensitive chip of the application.

[0044] REFERENCE NUMERALS:

[0045] 1, high-temperature sensitive chip; 2, conductive paste; 3, conductive pin; 4, glass base; 5, metal shell; 6, electrode; 7, through hole; 8, tooling; 9, assembly tooling; 10, connection base; 8-1, groove; 8-2, annular groove; 9-1, pin hole; 9-2, cylindrical bottom. DETAILED DESCRIPTION

[0046] A low-stress leadless packaging assembly of a high-temperature sensitive chip, comprising: a high-temperature sensitive chip 1, a conductive paste 2, a conductive pin 3, a glass base 4, and a metal shell 5.

[0047] The material of the high-temperature sensitive chip 1 can be silicon carbide, high-temperature glass, or sapphire.

[0048] The conductive paste 2 is a glass conductive paste containing metal, which is a PbO-ZnO-B2O3 system.

[0049] The conductive pin 3 and the metal casing 5 are made of the same material, namely Kovar alloy or stainless steel.

[0050] The glass base 4 is made of glass powder of the PbO-ZnO-B2O3 system, which is formed by pressing.

[0051] The high-temperature sensitive chip 1 consists of two chip layers bonded together. The second layer is provided with a through hole 7 for the conductive pin 3 to pass through. An electrode 6 is prepared on the area on the first chip corresponding to the through hole 7. The through hole 7 is used to fill the conductive paste 2.

[0052] The via 7 is a frustum-shaped structure that is narrower at the top and wider at the bottom. The end of the via 7 that contacts the first layer chip is defined as the top end, and the diameter of the bottom end face of the via 7 is larger than the diameter of the conductive pin 3. The via 7 is prepared by sandblasting, laser processing or mechanical drilling.

[0053] The conductive pin 3 is sintered in the through hole 7 of the high-temperature sensitive chip 1 through conductive paste 2, thereby realizing the electrical signal connection between the electrode 6 of the high-temperature sensitive chip 1 and the conductive pin 3.

[0054] The high-temperature sensitive chip 1, which has been electrically connected, is sintered with the glass base 4 and the metal shell 5 to form a whole, and the upper surface of the high-temperature sensitive chip 1 is flush with the upper surface of the metal shell 5.

[0055] The conductive paste 2 is filled into the through hole 7 of the high-temperature sensitive chip 1 using a precision dispensing method, and the filling amount of the conductive paste 2 is 2 / 3 of the through hole 7.

[0056] Design fixture 8, place the high temperature sensitive chip 1 on fixture 8, with the through hole 7 of the high temperature sensitive chip 1 facing upward.

[0057] The assembly fixture 9 is designed so that the conductive pin 3 passes through the fixture and enters the through-hole 7 of the high-temperature sensitive chip 1, making contact with the conductive paste 2 inside the through-hole 7. By sintering and curing the conductive paste 2, the electrical signal connection between the electrode 6 of the high-temperature sensitive chip 1 and the conductive pin 3 is achieved.

[0058] The fixture 8 is a cube or cuboid structure, with a groove 8-1 on the upper surface that matches the size of the high-temperature sensitive chip 1 and an annular groove 8-2 that matches the assembly fixture 9.

[0059] The assembly fixture 9 is a cylindrical structure with pin holes 9-1 that match the diameter of the conductive pin 3. The number and position of the pin holes 9-1 correspond to the high-temperature sensitive chip 1.

[0060] Along the center of the pin hole 9-1, remove part of the height of the cylindrical structure, leaving the bottom of the cylinder 9-2, which matches the annular groove 8-2 of the tooling 8. The remaining pin hole 9-1 is an open section, so that it can be observed under a microscope after assembly whether the conductive pin 3 has entered the through hole 7 of the high temperature sensitive chip 1.

[0061] A leadless packaged sensor includes a low-stress leadless package assembly for the high-temperature sensitive chip and a connecting base 10.

[0062] The connecting base 10 is a cylindrical structure with openings at both ends, used to connect with the metal shell 5 of the low-stress leadless package of the high-temperature sensitive chip, and the connection method is laser welding.

[0063] A method for fabricating a low-stress leadless package assembly for a high-temperature sensitive chip includes the following steps:

[0064] S1. Fill the through hole 7 of the high temperature sensitive chip 1 with conductive paste 2;

[0065] S2. Place the high-temperature sensitive chip 1 filled with conductive paste 2 on the groove 8-1 of the tooling 8, with the through hole 7 of the high-temperature sensitive chip 1 facing upwards.

[0066] S3. Design fixture 8 and assembly fixture 9. Use the fixtures to insert the conductive pin 3 into the through hole 7 filled with conductive paste 2: Align the cylindrical bottom 9-2 of the assembly fixture 9 into the annular groove 8-2 of the fixture 8, and then pass the conductive pin 3 through the pin hole 9-1 of the assembly fixture 9 so that the conductive pin 3 is inserted into the through hole 7 of the high temperature sensitive chip 1 and contacts the conductive paste 2 and the electrode 6.

[0067] S4. Place the conductive slurry 2 in the sintering furnace to cure. After the curing process is completed, remove and take out tooling 8 and assembly tooling 9.

[0068] S5. Assemble the high-temperature sensitive chip 1, which has already achieved electrical signal connection, with the glass base 4 and the metal shell 5, and place them in a sintering furnace to solidify and form a whole.

[0069] S6. Remove from the sintering furnace to realize the low-stress leadless packaging component of the high-temperature sensitive chip;

[0070] S7. Using laser welding, the low-stress leadless package of the high-temperature sensitive chip is welded to the connecting base, thus realizing the fabrication of the leadless package sensor.

[0071] This invention proposes a low-stress, leadless encapsulation assembly for a high-temperature sensitive chip and its fabrication method, comprising a high-temperature sensitive chip 1, a conductive paste 2, conductive pins 3, a glass substrate 4, a metal shell 5, and a connecting base 10. The high-temperature sensitive chip has through-holes for filling with the conductive paste; the conductive pins are sintered into the through-holes of the high-temperature sensitive chip through the conductive paste, achieving electrical signal connection between the electrodes of the high-temperature sensitive chip and the conductive pins; the high-temperature sensitive chip with the established electrical signal connection is sintered with the glass substrate and the metal shell to form a single unit, with the upper surface of the high-temperature sensitive chip flush with the upper surface of the metal shell, thus achieving a low-stress, leadless encapsulation assembly for the high-temperature sensitive chip. Finally, the assembly is laser-welded to the connecting base to realize a leadless encapsulated sensor.

[0072] Example:

[0073] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0074] like Figure 1 As shown, a low-stress leadless packaging assembly for a high-temperature sensitive chip includes a high-temperature sensitive chip 1, a conductive paste 2, conductive pins 3, a glass substrate 4, and a metal shell 5. The high-temperature sensitive chip 1 has through-holes 7 for filling with the conductive paste 2. The conductive pins 3 are sintered into the through-holes 7 of the high-temperature sensitive chip 1 through the conductive paste 2, achieving electrical signal connection between the electrodes 6 of the high-temperature sensitive chip 1 and the conductive pins 3. The high-temperature sensitive chip 1, with the established electrical signal connection, is sintered with the glass substrate 4 and the metal shell 5 to form a single unit, and the upper surfaces of the high-temperature sensitive chip 1 and the metal shell 5 are flush.

[0075] like Figures 2 to 5 As shown, a method for fabricating a low-stress leadless package assembly for a high-temperature sensitive chip includes the following steps:

[0076] S1. The material of the high temperature sensitive chip 1 is high temperature glass with a thickness of 0.4 mm. The through hole 7 is prepared by sandblasting. The electrode 6 is exposed in the through hole 7. The upper diameter of the through hole 7 is 450 μm and the lower diameter is 700 μm.

[0077] Using a jet dispensing valve with 15 pulses, conductive paste 2 is filled into the through hole 7 of the high-temperature sensitive chip 1 and placed at room temperature for 5 minutes to level.

[0078] S2. Place the high-temperature sensitive chip 1 filled with conductive paste 2 on the groove 8-1 of the tooling 8, with the through hole 7 facing upward;

[0079] S3. Align the cylindrical bottom 9-2 of the assembly fixture 9 into the annular groove 8-2 of the fixture 8, and then pass the conductive pin 3 with a diameter of 450μm through the assembly fixture 9 into the through hole 7 of the high temperature sensitive chip 1 to contact the conductive paste 2 and the electrode 6.

[0080] S4. Place the conductive paste 2 in an annealing furnace to cure. The process parameters are: 550℃ for 30 minutes, heating rate ≤5℃ / min, cooling rate ≤3℃ / min; after the curing process is completed, remove tooling 8 and assembly tooling 9.

[0081] S5. Assemble the high-temperature sensitive chip 1, which has already achieved electrical signal connection, with the glass substrate 4 and the metal shell 5, and place it in a five-temperature zone chain tunnel sintering furnace. The sintering atmosphere is nitrogen, with a flow rate of 15 L / min. The process parameters are as follows: Temperature zone 1: 150℃, holding time 2 min; Temperature zone 2: 300℃, holding time 2 min; Temperature zone 3: 500℃, holding time 10 min; Temperature zone 4: 400℃, holding time 1 min; Temperature zone 5: 300℃, holding time 1 min.

[0082] S6. When the temperature of the packaging structure drops to <100℃, it is taken out of the sintering furnace, thus realizing the low-stress leadless packaging component of the high-temperature sensitive chip.

[0083] S7. Using laser welding, the low-stress leadless package of the high-temperature sensitive chip is welded to the connecting base, thus realizing the fabrication of the leadless package sensor.

[0084] This invention eliminates the metal leads and insulating sealing layers conventionally used in sensitive chip packaging, and realizes the fabrication of leadless packaging components and sensors for high-temperature sensitive chips. The process is simple and easy to implement, which can improve the sensor's media compatibility, adaptability to harsh environments and reliability, and expand its application fields.

[0085] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

[0086] The contents not described in detail in this specification are existing technologies known to those skilled in the art.

Claims

1. A low-stress, leadless package assembly for a high-temperature sensitive chip, characterized by The application relates to a low-stress leadless packaging assembly of a high-temperature sensitive chip. The low-stress leadless packaging assembly of the high-temperature sensitive chip comprises a high-temperature sensitive chip (1), conductive paste (2), a conductive pin (3), a glass base (4) and a metal shell (5), wherein: The high-temperature sensitive chip (1) is bonded by two layers of chips, a through hole (7) is arranged on the second layer of chips for the conductive pin (3) to pass through and is used for filling the conductive paste (2); an area on the first layer of chips corresponding to the through hole (7) is provided with an electrode (6); One end of the conductive pin (3) passes through the through hole (7) on the high-temperature sensitive chip (1), is sintered in the through hole (7) through the conductive paste (2) and the electrode (6) and realizes electrical signal connection between the electrode (6) of the high-temperature sensitive chip (1) and the conductive pin (3); The glass base (4) is provided with a through hole for the conductive pin (3) to pass through, the through hole is sleeved with the conductive pin (3) from the suspended end and is in contact with the second layer of the high-temperature sensitive chip (1); The metal shell (5) is sleeved on the periphery of the glass base (4), and the high-temperature sensitive chip (1) is flush with the upper end surface of the metal shell (5); The high-temperature sensitive chip (1), the glass base (4) and the metal shell (5) which have realized electrical signal connection are sintered to form an integral whole.

2. The low-stress, leadless package assembly of a high temperature sensitive chip of claim 1, wherein: The through hole (7) is in a circular truncated cone structure with a narrow upper end and a wide lower end, the upper end of the through hole (7) is defined as an upper end, and the diameter of the lower end surface is greater than the diameter of the conductive pin (3); The through hole (7) is prepared by sand blasting, laser processing or mechanical drilling.

3. The low-stress, leadless package assembly of a high temperature sensitive chip of claim 1, wherein: The conductive paste (2) is filled into the through hole (7) of the high-temperature sensitive chip (1) by precise dispensing, and the filling amount of the conductive paste (2) is 2 / 3 of the volume of the through hole (7).

4. The low-stress leadless packaging assembly of the high-temperature sensitive chip according to claim 1, wherein: The material of the high-temperature sensitive chip (1) is selected from silicon carbide, high-temperature glass and sapphire; The conductive paste (2) is glass conductive paste of a PbO-ZnO-B2O3 system containing metal; The materials of the conductive pin (3) and the metal shell (5) are the same, and are Kovar alloy or stainless steel; The material of the glass base (4) is glass powder of a PbO-ZnO-B2O3 system, and the glass base (4) is formed by pressing.

5. The low-stress, leadless package assembly of claim 1, wherein: The metal shell (5) of the low-stress leadless packaging assembly of the high-temperature sensitive chip can be assembled with a cylindrical connecting base (10) and welded to form a low-stress leadless packaging sensor of the high-temperature sensitive chip.

6. A method of fabricating a low-stress, leadless package assembly using a high temperature sensitive die as claimed in claim 1, wherein The application further relates to a method for manufacturing the low-stress leadless packaging assembly of the high-temperature sensitive chip. S1, filling the conductive paste (2) into the through hole (7) of the high-temperature sensitive chip (1); S2, placing the high-temperature sensitive chip (1) filled with the conductive paste (2) on the groove (8-1) of a tooling (8), and the through hole (7) of the high-temperature sensitive chip (1) faces upward; S3, designing the tooling (8) and an assembly tooling (9) and inserting the conductive pin (3) into the through hole (7) filled with the conductive paste (2) by using the tooling; S4, solidifying the conductive paste (2) in a sintering furnace, and removing and taking out the tooling (8) and the assembly tooling (9) after the solidification process is completed; S5, assembling the high-temperature sensitive chip (1), the glass base (4) and the metal shell (5) which have realized electrical signal connection and placing them in a sintering furnace to form an integral whole. S6, the sintering furnace is taken out, that is, the low-stress leadless packaging assembly of high-temperature sensitive chip is realized.

7. The method of claim 6, wherein the method further comprises: The tooling (8) is a cube or cuboid structure, and a recess (8-1) matching the size of the high-temperature sensitive chip (1) is formed on the upper end face, and an annular recess (8-2) matching the assembly tooling (9) is formed.

8. The method of claim 7, wherein the method further comprises: The assembly tooling (9) is a cylindrical structure, and a pin hole (9-1) matching the diameter of the conductive pin (3) is formed, and the number and position of the pin hole (9-1) correspond to the through hole (7) of the high-temperature sensitive chip (1); Along the center position of the pin hole (9-1), a part of the cylindrical structure is removed to leave a cylindrical bottom (9-2) matching the annular recess (8-2) of the tooling (8), and the remaining pin hole (9-1) is an open cross section to facilitate observation under a microscope after assembly whether the conductive pin (3) enters the through hole (7) of the high-temperature sensitive chip (1).

9. The method of claim 8, wherein the method further comprises: When the conductive pin (3) is inserted into the through hole (7) filled with the conductive paste (2) by using the tooling: The cylindrical bottom (9-2) of the assembly tooling (9) is positioned into the annular recess (8-2) of the tooling (8), and then the conductive pin (3) is inserted into the through hole (7) of the high-temperature sensitive chip (1) through the pin hole (9-1) of the assembly tooling (9), and the conductive pin (3) contacts the conductive paste (2) and the electrode (6).

10. The method of claim 6, wherein the method further comprises: After the low-stress leadless packaging assembly of the high-temperature sensitive chip is completed, the low-stress leadless packaging assembly of the high-temperature sensitive chip is welded with the connecting base (10) by laser welding, and the preparation of the leadless packaging sensor is completed. ​

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