Self-driven wearable pressure sensor and manufacturing method thereof
By using a flexible conductive substrate layer, a gallium nitride nanowire layer and a hydrogel electrolyte layer in the self-driven wearable pressure sensor, self-drive is achieved by using photoelectrochemical reactions, and the problem of limited crystal quality and device performance in the prior art is solved, and the performance and wearability of the sensor are improved.
Patent Information
- Application Number
- CN202510042905.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-10
- Publication Date
- 2025-05-06
AI Technical Summary
The crystal quality and device performance of existing self-driven or self-powered self-drive wearable pressure sensors are limited.
A self-driven wearable pressure sensor composed of a flexible conductive substrate layer, a gallium nitride nanowire layer and a hydrogel electrolyte layer generates energy through the photoelectrochemical reaction between the gallium nitride nanowire layer and the hydrogel electrolyte layer to achieve self-drive.
It improves crystal quality and device performance, enhances the safety and wearable performance of the sensor, eliminates the need for external power supply, and provides energy through internal stress caused by pressure, achieving energy-saving and environmentally friendly functions.
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Figure CN119935359A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of self-driven wearable pressure sensors, and in particular, relates to a self-driven wearable pressure sensor and a manufacturing method thereof. Background Art
[0002] As an important type of sensor, self-driven wearable pressure sensors have shown great application potential in the fields of medical monitoring, human-computer interaction, sports health, etc. in recent years. Self-driven wearable pressure sensors are usually designed to be lightweight, soft and able to fit closely to human skin. They can monitor the pressure distribution and changes of various parts of the human body in real time, providing key data for medical diagnosis, rehabilitation training, sports performance analysis, etc.
[0003] In order to reduce the dependence on power supply in scenarios such as remote areas, mobile devices or implantable medical devices, the development of self-driven or self-powered self-driven wearable pressure sensors is a future trend. Currently, common self-driven wearable pressure sensors are based on thin film structures, and the crystal quality and device performance of such sensors are limited. Summary of the invention
[0004] The technical problem solved by the present application is: how to improve the crystal quality and device performance of self-driven or self-powered self-driven wearable pressure sensors.
[0005] The present application provides a self-driven wearable pressure sensor, the self-driven wearable pressure sensor comprising:
[0006] a flexible conductive substrate layer;
[0007] A gallium nitride nanowire layer, wherein the gallium nitride nanowire layer is located on the flexible conductive substrate layer;
[0008] A hydrogel electrolyte layer covers the gallium nitride nanowire layer.
[0009] Optionally, the gallium nitride nanowire layer includes a gallium nitride nanowire array, and each gallium nitride nanowire includes a gallium nitride layer and a bandgap adjustment layer located on the gallium nitride layer.
[0010] Optionally, the gallium nitride nanowire layer further includes a silicon dioxide passivation layer, which covers the gallium nitride nanowire and exposes a portion of the top surface, and the exposed portion of the top surface of the gallium nitride nanowire and the side surface of the gallium nitride nanowire are in contact with the hydrogel electrolyte layer.
[0011] Optionally, the bandgap adjustment layer is an indium gallium nitride layer or an aluminum gallium nitride layer.
[0012] Optionally, the self-driven wearable pressure sensor further comprises:
[0013] a first electrode connected to the flexible conductive substrate layer;
[0014] A second electrode is connected to the hydrogel electrolyte layer.
[0015] Optionally, the number of the flexible conductive substrate layers and the gallium nitride nanowire layers is at least two, each of the flexible conductive substrate layers is connected to each of the gallium nitride nanowire layers in a one-to-one correspondence, and the flexible conductive substrate layers are provided on opposite sides of the hydrogel electrolyte layer, and each of the gallium nitride nanowire layers is arranged at intervals.
[0016] Optionally, the hydrogel electrolyte layer comprises at least one of methacrylate silk fibroin, polybutylene succinate and leucine aminopeptidase.
[0017] Optionally, the flexible conductive substrate layer is a flexible indium tin oxide substrate or a polyethylene naphthalate substrate.
[0018] The present application also provides a method for manufacturing a self-driven wearable pressure sensor, the manufacturing method comprising:
[0019] Forming a gallium nitride nanowire layer on a silicon substrate;
[0020] peeling the gallium nitride nanowire layer from the silicon substrate and transferring it to a flexible conductive substrate layer;
[0021] A hydrogel electrolyte layer is prepared on the gallium nitride nanowire layer.
[0022] Optionally, the manufacturing method further comprises:
[0023] A first electrode is connected to the flexible conductive substrate layer, and a second electrode is connected to the hydrogel electrolyte layer.
[0024] The present application provides a self-driven wearable pressure sensor and a manufacturing method thereof, which have the following technical effects:
[0025] Compared with traditional thin film structures, GaN nanowires are more conducive to releasing epitaxial stress, reducing defects and dislocations, and improving crystal quality. The use of hydrogel as a solid electrolyte further enhances the safety and wearable performance of the sensor. Without an external power supply, energy is provided by deformation caused by internal stress due to pressure, i.e. piezoelectric self-drive, thus achieving energy-saving and environmental protection functions. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 is a schematic diagram of the structure of a self-driven wearable pressure sensor according to one or more embodiments;
[0027] Figure 2is another structural schematic diagram of a self-driven wearable pressure sensor according to one or more embodiments;
[0028] Figure 3 is a flow chart of a method for manufacturing a self-driven wearable pressure sensor according to one or more embodiments;
[0029] Figure 4 is a flow chart of a method for manufacturing a self-driven wearable pressure sensor according to one or more embodiments;
[0030] Figure 5 Based on Figure 4 Schematic diagram of the structure of the self-driven wearable pressure sensor prepared by the manufacturing method. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0032] Before describing the various embodiments of the present application in detail, the technical concept of the present application is first briefly described: the current self-driven or self-powered self-driven wearable pressure sensors are based on thin film structures, and the crystal quality and device performance are limited. To this end, the self-driven wearable pressure sensor and its manufacturing method provided by the present application constitute a flexible self-driven wearable pressure sensor through a flexible conductive substrate layer, a gallium nitride nanowire layer and a hydrogel electrolyte layer, and generate energy through the photoelectrochemical reaction between the gallium nitride nanowire layer and the hydrogel electrolyte layer to achieve self-driving, and the internal stress changes of the two under different bending degrees affect the built-in resistance value inside the sensor, thereby achieving the purpose of pressure sensing, and at the same time, the nanowire has a larger surface area to volume ratio, which is more conducive to releasing epitaxial stress, reducing defects and dislocations, thereby improving crystal quality, and then enhancing the performance of the self-driven wearable pressure sensor. The specific principles of the self-driven wearable pressure sensor and its manufacturing method of the present application are described in combination with more embodiments below.
[0033] Specifically, Figure 1 As shown, the self-driven wearable pressure sensor of the first embodiment includes a flexible conductive substrate layer 10, a gallium nitride nanowire layer 20, and a hydrogel electrolyte layer 30, wherein the gallium nitride nanowire layer 20 is located on the flexible conductive substrate layer 10, and the hydrogel electrolyte layer 30 covers the gallium nitride nanowire layer 20.
[0034] The number of the flexible conductive substrate layer 10 and the gallium nitride nanowire layer 20 can be one or two or more. When there is one, the first electrode 40 is connected to the flexible conductive substrate layer 10, and the second electrode 50 is connected to the hydrogel electrolyte layer 30. The piezoelectric signal is transmitted to the outside through the first electrode 40 and the second electrode 50, thereby realizing sensing detection. When the number of the flexible conductive substrate layer 10 and the gallium nitride nanowire layer 20 is at least two, each flexible conductive substrate layer 10 is connected to each gallium nitride nanowire layer 20 in a one-to-one correspondence, and there are flexible conductive substrate layers 10 on opposite sides of the hydrogel electrolyte layer 30, and each gallium nitride nanowire layer 20 is arranged at intervals.
[0035] In one or more embodiments, the gallium nitride nanowire layer 20 includes a gallium nitride nanowire array, and each gallium nitride nanowire 21 includes a gallium nitride layer 21a and a bandgap adjustment layer 21b located on the gallium nitride layer 21a. The bandgap adjustment layer 21b is an indium gallium nitride layer (InGaN) or an aluminum gallium nitride layer (AlGaN). The nanowire structure composed of GaN and related semiconductor materials is conducive to increasing the carrier density, and both InGaN and AlGaN have adjustable band gaps.
[0036] In one or more embodiments, the gallium nitride nanowire layer 20 further includes a silicon dioxide passivation layer, which covers the top surface of the gallium nitride nanowire 21 and exposes a portion of the top surface, and the exposed portion of the top surface of the gallium nitride nanowire 21 and the side of the gallium nitride nanowire 21 are in contact with the hydrogel electrolyte layer 30. The silicon dioxide passivation layer can prevent leakage current. Exemplarily, the effective area of the exposed portion of each gallium nitride nanowire 21 is about 0.01 cm 2 , the exposed nanowires can contact the hydrogel electrolyte and react.
[0037] In one or more embodiments, the components of the hydrogel electrolyte layer 30 include at least one of silk methacrylate protein (SFMA), polybutylene succinate (PBS) and leucine aminopeptidase (LAP). The hydrogel electrolyte layer 30 has the advantages of flexibility, high viscosity, and adjustable elastic modulus. It is easy to adhere to the surface of an object and can withstand pressure to bend to achieve flexible functions.
[0038] Exemplarily, the flexible conductive substrate layer is a flexible indium tin oxide substrate (ITO) or a polyethylene naphthalate substrate (PEN).
[0039] In one or more embodiments, a method for manufacturing a self-driven wearable pressure sensor includes the following steps:
[0040] Step S10, forming a gallium nitride nanowire layer 20 on a silicon substrate;
[0041] Step S20, peeling the gallium nitride nanowire layer 20 from the silicon substrate and transferring it to the flexible conductive substrate layer 10;
[0042] Step S30 , preparing a hydrogel electrolyte layer 30 on the gallium nitride nanowire layer 20 .
[0043] For example, Figure 3 As shown in FIG. 1 , the overall process of the manufacturing method is: take a piece of n-type Si substrate and place it in a molecular beam epitaxy (MBE) growth chamber, preheat the Si substrate to 900°C for tens of minutes to remove the native oxide, then deposit the AlN buffer layer, grow nanowires, peel off the substrate to transfer the flexible substrate, and add hydrogel. The specific steps are as follows:
[0044] The first step, such as Figure 3 As shown in (a), during the MBE process, after setting a constant nitrogen flow rate and plasma power, the plasma was heated to about 4.5×10 -8 Torr nominal Al flux was introduced into the Al element, and an AlN buffer layer about 3 nm thick was deposited on Si;
[0045] The second step is, Figure 3 As shown in (b), the nominal constant is 2.0×10 -8 Torr of Ga flux and then grown for 110 minutes to obtain the grown GaN nanowires. Then, InGaN nanowires were grown for 50 minutes with an In / Ga flux ratio of 0.43. Then, in order to protect the InGaN nanowires from etching, 2.0×10 -8 Torr Ga flux allowed the Ga segment to continue growing for 30 min;
[0046] The third step is Figure 3 As shown in (c), the prepared GaN nanowire array is peeled off from the Si substrate and transferred to the flexible conductive substrate layer (ITO / PEN);
[0047] The fourth step is Figure 3 As shown in (d), a thin silicon dioxide passivation layer is coated on the top surface of the GaN nanowire using inductively coupled plasma chemical vapor deposition and then exposed using photolithography and reactive ion beam etching to expose about 0.01 cm 2 The active area of the device is then covered with a hydrogel electrolyte layer. The hydrogel consists of methacrylate silk protein, polybutylene succinate and leucine aminopeptidase, and the electrodes are connected to the edge of the flexible conductive substrate layer.
[0048] Thus, the preparation of a self-driven wearable pressure sensor based on flexible GaN material is completed. Figure 3As shown in (e), after extrusion Figure 3 As shown in (f), both the flexible conductive substrate layer and the hydrogel electrolyte layer are deformed to generate internal stress, thereby generating piezoelectricity for self-driving.
[0049] For example, GaN nanowires can be made of two different compositions, such as Figure 3 As shown in (d), the left and right sides are nanowires of different compositions. In this embodiment, the steps of growing (Al, Ga) N and (In, Ga) N nanowires are as follows: First, the AlGaN nanowire on the left is grown using 2.0×10 -8 The GaN nanowires were grown with a Ga flux of 100 Torr for 100 minutes, and then (In, Ga)N was grown with an Al / Ga flux ratio of about 0.75 for 90 minutes. The AlN segment was inserted into the nanowire and continued to grow for 4 minutes. The nanowire on the right is an InGaN nanowire. The GaN segment was grown for 100 minutes at the beginning, followed by the InGaN segment for 50 minutes. Finally, the GaN nanowire should be grown for 30 minutes to protect it from etching. Then SiO2 and hydrogel were coated, and the structure was as follows Figure 2 shown.
[0050] In another embodiment, the (Al, Ga)N and (In, Ga)N nanowires are replaced with Ga2O3, that is, Ga2O3 is used as the band gap adjustment layer 21b.
[0051] First, take a piece of n-type Si substrate and place it in a molecular beam epitaxy (MBE) growth chamber, and preheat the Si substrate to 900°C for tens of minutes to remove the native oxide. Then deposit the AlN buffer layer, grow nanowires, oxidize the nanowires, and connect the wires, such as Figure 4 The specific steps are as follows:
[0052] The first step, such as Figure 4 As shown in (a), during the MBE process, after setting a constant nitrogen flow rate (4.8 sccm) and plasma power (450 W), an AlN buffer layer with a thickness of about 3 nm was deposited on Si;
[0053] The second step is, Figure 4 As shown in (b), the nominal constant is 2.0×10 -8 After a Ga flux of 1000 Torr, the grown GaN nanowires were obtained for 110 minutes. The prepared GaN nanowire arrays were heated to 800°C and exposed to oxygen for 10 minutes until the surface was completely oxidized, completing the preparation of the Ga2O3 / GaN nanowire arrays, and the arrays were divided into small portions;
[0054] The third step is Figure 4As shown in (c), the prepared Ga2O3 nanowire array is peeled off from the Si substrate and transferred to the flexible conductive substrate layer (ITO / PEN);
[0055] The fourth step is Figure 4 As shown in (d), a thin silicon dioxide passivation layer is coated on the top surface of the nanowire using inductively coupled plasma chemical vapor deposition and then exposed using photolithography and reactive ion beam etching to expose approximately 0.01 cm 2 The effective area of the device is then covered with hydrogel.
[0056] Thus, the preparation of gallium oxide in the self-driven wearable pressure sensor based on flexible Ga2O3 material is completed. The structural diagram is shown in Figure 5 shown.
[0057] The self-driven wearable pressure sensor and its manufacturing method provided in this embodiment, compared with the traditional thin film structure, GaN nanowires are more conducive to releasing epitaxial stress, reducing defects and dislocations, and improving crystal quality. Hydrogel is used as a solid electrolyte to further improve the safety and wearable performance of the sensor. No external power supply is required, and energy is provided by deformation caused by internal stress due to pressure, that is, piezoelectric self-driving, thereby achieving energy saving and environmental protection.
[0058] Furthermore, the self-driven wearable pressure sensor can be applied to humanoid robots, and the humanoid robot control system includes a self-driven pressure sensing system, a data acquisition subsystem, a signal processing subsystem, a control decision subsystem and an action execution subsystem. In the circuit, the self-driven wearable pressure sensor based on flexible GaN material corresponds to the self-driven pressure sensing system. The data acquisition subsystem is composed of a flow voltage amplifier, which serves as data acquisition and amplification of weak analog current signals. Then the signal processing system includes a digital-to-analog converter to execute. The control decision subsystem automatically calls the response feedback and threshold parameters by the pre-set application. Finally, the signal is transported to the motion execution subsystem, and the humanoid robot is controlled by a fully programmed program.
[0059] The specific implementation methods of the present application are described in detail above. Although some embodiments have been shown and described, those skilled in the art should understand that these embodiments can be modified and improved without departing from the principles and spirit of the present application whose scope is defined by the claims and their equivalents. These modifications and improvements should also be within the scope of protection of the present application.
Claims
1. A self-driven wearable pressure sensor, characterized in that: The self-driven wearable pressure sensor comprises: a flexible conductive substrate layer; A gallium nitride nanowire layer, wherein the gallium nitride nanowire layer is located on the flexible conductive substrate layer; A hydrogel electrolyte layer covers the gallium nitride nanowire layer.
2. The self-driven wearable pressure sensor according to claim 1, characterized in that: The gallium nitride nanowire layer includes a gallium nitride nanowire array, and each gallium nitride nanowire includes a gallium nitride layer and a bandgap adjustment layer located on the gallium nitride layer.
3. The self-driven wearable pressure sensor according to claim 2, characterized in that: The gallium nitride nanowire layer further includes a silicon dioxide passivation layer, which covers the top surface of the gallium nitride nanowire and exposes a portion of the top surface. The exposed portion of the top surface of the gallium nitride nanowire and the side surface of the gallium nitride nanowire are in contact with the hydrogel electrolyte layer.
4. The self-driven wearable pressure sensor according to claim 2, characterized in that: The bandgap adjustment layer is an indium gallium nitride layer or an aluminum gallium nitride layer.
5. The self-driven wearable pressure sensor according to claim 1, characterized in that: The self-driven wearable pressure sensor also includes: a first electrode connected to the flexible conductive substrate layer; A second electrode is connected to the hydrogel electrolyte layer.
6. The self-driven wearable pressure sensor according to claim 1, characterized in that: The number of the flexible conductive substrate layers and the gallium nitride nanowire layers is at least two, each of the flexible conductive substrate layers is connected to each of the gallium nitride nanowire layers in a one-to-one correspondence, and the flexible conductive substrate layers are provided on opposite sides of the hydrogel electrolyte layer, and each of the gallium nitride nanowire layers is arranged at intervals.
7. The self-driven wearable pressure sensor according to claim 1, characterized in that: The components of the hydrogel electrolyte layer include at least one of methacrylate silk fibroin, polybutylene succinate and leucine aminopeptidase.
8. The self-driven wearable pressure sensor according to claim 1, characterized in that: The flexible conductive substrate layer is a flexible indium tin oxide substrate or a polyethylene naphthalate substrate.
9. A method for manufacturing a self-driven wearable pressure sensor according to any one of claims 1 to 8, characterized in that: The manufacturing method comprises: Forming a gallium nitride nanowire layer on a silicon substrate; peeling the gallium nitride nanowire layer from the silicon substrate and transferring it to a flexible conductive substrate layer; A hydrogel electrolyte layer is prepared on the gallium nitride nanowire layer.
10. The method for manufacturing a self-driven wearable pressure sensor according to claim 9, characterized in that: The manufacturing method further comprises: A first electrode is connected to the flexible conductive substrate layer, and a second electrode is connected to the hydrogel electrolyte layer.