Pressure sensor chip

Abstract

A pressure sensor chip comprises a substrate, a pressure sensing part, a sensitive resistor, a composite metal layer and a connecting piece, and the substrate is arranged on one side of the pressure sensing part; the sensitive resistor is arranged on the pressure sensing part, the sensitive resistor is connected with the composite metal layer, the composite metal layer is connected with the connecting piece, and the composite metal layer comprises at least two kinds of metal; the pressure sensor chip is provided with a cavity, and the pressure sensing part is at least partially exposed to the cavity. In the pressure sensor chip, the pressure sensor chip comprises a sensitive resistor and a composite metal layer, the sensitive resistor is arranged on the pressure sensing part, the sensitive resistor is connected with the composite metal layer, the composite metal layer is connected with the connecting piece, the composite metal layer comprises at least two kinds of metal, and an intermetallic compound can be formed between the composite metal. And the composite metal layer and the connecting piece can be firmly combined.

Description

Technical Field

[0001] The present application belongs to the technical field of sensor chips, and specifically relates to a pressure sensor chip. Background Art

[0002] Pressure sensor chips have the ability to sensitively perceive the external environment and are key components for measuring pressure. Integrating multi-physical quantity sensor chips into the system is of great significance for realizing real-time monitoring and control of complex physical quantities in modern industrial scenarios.

[0003] In the related technology, the pressure sensor chip includes a substrate, a force sensitive resistor, a connector, a cavity and a metal lead. The metal lead is directly connected to the connector and then welded to the substrate. The electrical signal generated by the sensitive resistor is led out through the metal lead and the connector. Directly connecting the metal lead and the connector will cause the connector and the metal lead to be loosely bonded. Summary of the invention

[0004] The purpose of this application is to provide a pressure sensor chip.

[0005] A pressure sensor chip comprises a substrate, a pressure sensing part, a sensitive resistor, a composite metal layer and a connecting piece, wherein the substrate is arranged on one side of the pressure sensing part; the sensitive resistor is arranged on the pressure sensing part, the sensitive resistor is connected to the composite metal layer, the composite metal layer is connected to the connecting piece, and the composite metal layer comprises at least two metals;

[0006] The pressure sensor chip has a cavity, and the pressure sensing portion is at least partially exposed to the cavity.

[0007] In the present application, the pressure sensor chip includes a sensitive resistor and a composite metal layer. The sensitive resistor is arranged in the pressure sensing part. The sensitive resistor is connected to the composite metal layer. The composite metal layer is connected to the connecting piece. The composite metal layer includes at least two metals. Intermetallic compounds can be formed between the composite metals, so that the composite metal layer and the connecting piece are firmly bonded and have better performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a cross-sectional view of a pressure sensor chip;

[0009] Figure 2 It is a schematic diagram of the structure of the lead-out part in the pressure sensor chip;

[0010] Figure 3 for Figure 1 A is an enlarged schematic diagram;

[0011] Figure 4 It is a structural schematic diagram of an implementation method of the pressure sensing part;

[0012] Figure 5 It is a schematic diagram of the structure of the connection between the pressure sensing part and the lead-out part in the pressure sensor chip;

[0013] Figure 6 A schematic diagram of the structure of an implementation method in a substrate. DETAILED DESCRIPTION

[0014] The formation and use of the currently preferred embodiments are discussed in detail below. However, it should be appreciated that the present application provides many applicable inventive concepts that can be specifically implemented in a variety of specific contexts. The specific embodiments discussed merely illustrate specific ways to form and use the present application and do not limit the scope of the present application. In order to more fully understand the present application and its advantages, it is now described in conjunction with the accompanying drawings.

[0015] The cross-sectional view of the pressure sensor chip of the present application is as follows: Figure 1 As shown, the pressure sensor chip includes a substrate 1, a pressure sensing part 2, a sensitive resistor 3 and a composite metal layer 9; wherein the sensitive resistor 3 is arranged in the pressure sensing part 2; the composite metal layer 9 is electrically connected to the sensitive resistor 3; the pressure signal generated by the sensitive resistor 3 in the pressure sensing part 2 is transmitted to the composite metal layer 9, and is led out through the connecting piece 12, and then the pressure is tested, thereby improving the test accuracy of the pressure sensor chip and the installation reliability. In addition, the present application does not use TSV technology to lead out the electrical signal, thereby reducing the production cost.

[0016] In some embodiments, the pressure sensor chip includes a sensitive resistor 3, and the sensitive resistor 3 and the conductive resistor 4 are both arranged in the pressure sensing part 2. The sensitive resistor 3 and the conductive resistor are arranged in close contact and electrically connected. The sensitive resistor 3 senses pressure and transmits the pressure signal to the conductive resistor 4 more quickly. The conductive resistor 4 transmits the signal out, and the conductive resistor 4 is directly electrically connected to the composite metal layer 9. The pressure signal generated by the pressure sensing part 2 is transmitted to the composite metal layer via the conductive resistor, and then the pressure signal is output, thereby improving the detection accuracy of the sensor chip.

[0017] Furthermore, in some embodiments, the sensitive resistor 3 and the conductive resistor 4 are both silicon doped with boron, and the concentration of boron doped in the conductive resistor 4 is greater than the concentration of boron doped in the sensitive resistor 3; there are at least four sensitive resistors 3 and four conductive resistors 4 in the pressure sensor chip, forming a Wheatstone bridge to convert the pressure signal into an electrical signal, thereby detecting the pressure more accurately.

[0018] In some embodiments, the pressure sensor chip has a cavity 6, the cavity 6 is at least partially located in the substrate 1, the pressure sensing part 2 is at least partially exposed to the cavity 6, and the cavity 6 is a vacuum cavity. The substrate 1 and the pressure sensing part 2 form the cavity 6, and the vacuum cavity is formed by evacuating the cavity, and the pressure felt by the pressure sensing part 2 is an absolute pressure, thereby improving the detection accuracy of the pressure sensor chip.

[0019] In some embodiments, the substrate 1 and the pressure-sensing portion 2 are selected from at least one of silicon and silicon carbide.

[0020] In some embodiments, the pressure sensor chip includes a first insulating layer 5, which is disposed on the pressure sensing part 2, the substrate 1 and the first insulating layer 5 are located on both sides of the pressure sensing part 2, and the composite metal layer 9 covers at least part of the surface of the first insulating layer 5.

[0021] In some embodiments, the pressure sensor chip includes a lead-out portion 8, the lead-out portion 8 includes a first lead-out portion 81 and a second lead-out portion 82, the first insulating layer 5 has a through hole 83, and the conductive resistor 4 is electrically connected to the lead-out portion 8; the first lead-out portion 81 passes through the first insulating layer 5 through the through hole 83 and is electrically connected to the conductive resistor 4, at least a portion of the first lead-out portion 81 is located in the through hole 83, the first lead-out portion 81 and the second lead-out portion 82 are an integral part, and along the thickness direction Z of the pressure sensor chip, the second lead-out portion 82 covers at least a portion of the first insulating layer 5. Part of the surface, the two ends of the first lead-out portion 81 are electrically connected to the conductive resistor 4 and the second lead-out portion 82 respectively, and the thickness direction Z perpendicular to the pressure sensor chip is defined as the horizontal direction X. Along the horizontal direction X of the pressure sensor chip, there is a gap between the sensitive resistor 3 and the first lead-out portion 81. The sensitive resistor 3 and the conductive resistor 4 convert the pressure signal into an electrical signal and output it through the lead-out portion 8; the lead-out portion 8 is aluminum or copper or an aluminum-copper alloy, and the first insulating layer 5 is selected from at least one of silicon dioxide and silicon nitride to prevent the lead-out portion 8 from short-circuiting with the conductive resistor 4. Specifically, Figure 2 shown.

[0022] In some embodiments, the pressure sensor chip includes a composite metal layer 9, which is covered on at least a portion of the surface of the second lead-out portion 82. Along the thickness direction Z of the pressure sensor chip, the composite metal layer 9 is away from the first insulating layer 5 relative to the second lead-out portion 82; the composite metal layer 9 is electrically connected to the second lead-out portion 82 and outputs an electrical signal, wherein the metal in the composite metal layer 9 is selected from at least two of aluminum, zinc, nickel, titanium, silver, copper and gold, preferably copper, nickel, tin and silver; first, a copper layer, a nickel layer, a tin layer and a silver layer are sequentially deposited on at least a portion of the surface of the second lead-out portion 82 to form a composite metal layer, which can be electrically connected to the second lead-out portion 82 to output an electrical signal, and is convenient for subsequent implantation of the connector 12 to provide support, and at the same time, intermetallic compounds can be formed between the metals, which have a high welding strength with the connector 12 and are firmly combined with the connector 12, thereby improving the connection reliability between the composite metal layer 9 and the connector 12 and reducing the generation of residual stress.

[0023] In some embodiments, the material of the first lead-out portion 81 and the second lead-out portion 82 is selected from one of aluminum, copper and silver.

[0024] In some embodiments, specifically Figure 3As shown, the pressure sensor chip includes a protective layer 10. Along the thickness direction Z of the pressure sensor chip, the protective layer 10 covers at least part of the surface of the first insulating layer 5 and the second lead-out portion 82. Along the thickness direction X of the pressure sensor chip, the protective layer 10 covers the surface of the second lead-out portion 82 and the composite metal layer 9. The material of the protective layer 10 is selected from at least one of silicon dioxide and silicon nitride, so that the composite metal layer 9 and the second lead-out portion 82 are not in contact with the outside world, so as to achieve the purpose of waterproof and dustproof, thereby improving the service life of the pressure sensor chip, and also preventing the output electrical signal from external interference, so as to achieve higher test accuracy.

[0025] In some embodiments, the pressure sensor chip includes a second insulating layer 7, which is arranged between the first insulating layer 5 and the pressure sensing part 2. Along the thickness direction Z of the pressure sensor chip, the second insulating layer covers at least part of the surface of the pressure sensing part 2, and the first insulating layer 5 is away from the pressure sensing part 2 relative to the second insulating layer 7; the first insulating layer 5 and the second insulating layer 7 are stacked, which can reduce the residual stress in the pressure sensor chip and achieve better stress matching, so as to improve the mechanical properties of the pressure sensor chip and extend the service life of the chip; or, the first lead-out portion 81 passes through the first insulating layer 5 and the second insulating layer 7 through the through hole 83, and is electrically connected to the conductive resistor 4, and at least part of the surface of the first insulating layer 5 and at least part of the surface of the second insulating layer 7 are exposed to the through hole 83; the second insulating layer is selected from at least one of silicon dioxide or silicon nitride.

[0026] In some embodiments, the pressure sensor chip includes a connector 12, which is arranged on the composite metal layer 9, that is, it is covered on at least a portion of the surface of the composite metal layer 9 and is electrically connected to the composite metal layer 9. The composite metal layer 9 has a good supporting effect on the connector 12, which can stably combine the connector 12 with the composite metal layer 9, improve the bonding strength between the connector 12 and the composite metal layer 9, and facilitate the subsequent stable welding of the pressure sensor chip to the substrate to ensure the quality of the chip; the connector 12 is at least partially located on the outside of the composite metal layer 9, or the connector 12 is at least partially located outside the protective layer 10, wherein the connector 12 is in the shape of a semi-spherical ball, a bump structure, etc.; a solder ball is preferred; in addition, the connector 12 can also output electrical signals by front binding.

[0027] In some embodiments, the composite metal layer 9 is partially embedded in the protective layer 10, the composite metal layer 9 is at least partially connected to the connector 12, and the second lead-out portion 82 is embedded in the protective layer 10; the connector 12 is at least partially exposed to the outside of the protective layer 10, and there is a gap between at least parts of at least two adjacent protective layers 10; along the thickness direction Z of the pressure sensor chip, the connector 12 is away from the first insulating layer 5 relative to the protective layer 10.

[0028] In some embodiments, the pressure sensor chip includes a third insulating layer 11, which is arranged between the substrate 1 and the pressure sensing part 2. Along the thickness direction Z of the pressure sensor chip, the third insulating layer 11 covers at least part of the surface of the substrate 1, and then the substrate 1 with the third insulating layer 11 is bonded to the pressure sensing part 2, which can reduce the residual stress of the chip and improve the mechanical properties of the pressure sensor chip. The third insulating layer 11 is at least partially exposed to the cavity 6, and the third insulating layer 11 is selected from at least one of silicon dioxide and silicon nitride, and silicon dioxide is specifically preferred.

[0029] In some embodiments, at least parts of the sensitive resistor 3 and the conductive resistor 4 are embedded in the pressure sensing part 2, and the sensitive resistor 3 and the conductive resistor 4 are both arranged in contact with the second insulating layer 7; along the thickness direction Z of the pressure sensor chip, the sensitive resistor 3 and the conductive resistor 4 are away from the third insulating layer 11 relative to the second insulating layer 7; the cavity 6 passes through the third insulating layer 11, and the cavity 6 is at least partially located on the substrate 1.

[0030] The present application also provides a method for manufacturing a pressure sensor chip, comprising the following steps:

[0031] An ion implantation process is used to form a sensitive resistor 3 and a conductive resistor 4 inside the pressure-sensing part 2 made of single crystal silicon. The sensitive resistor 3 and the conductive resistor 4 are arranged in a bonded manner. The composite metal layer 9 is connected to the conductive resistor 4 to output an electrical signal.

[0032] Etching a cavity 6 on the substrate 1;

[0033] The first insulating layer 5 is physically deposited on one side of the pressure-sensing part 2 , and the other side of the pressure-sensing part 2 is bonded to the substrate 1 having the cavity 6 , and the pressure-sensing part 2 is at least partially exposed to the cavity 6 .

[0034] In some embodiments, the sensitive resistor 3 and the conductive resistor 4 in the pressure sensing part 2 are both silicon doped with boron, the concentration of boron doped in the conductive resistor 4 is greater than the concentration of boron doped in the sensitive resistor 3, the sensitive resistor 3 and the conductive resistor 4 are both P-type silicon, wherein the resistance value of the sensitive resistor 3 is higher than that of the conductive resistor, the sensitive resistor 3 is located in the pressure sensing part 2, and can better sense the pressure applied to the pressure sensing part 2 by the external environment, the sensitive resistor 3 transmits the pressure signal through the conductive resistor 4, so that the pressure sensor chip has a higher detection accuracy.

[0035] In some embodiments, a first insulating layer 5 is deposited on the surface of the pressure-sensing part 2, and the first insulating layer 5 is selected from at least one of silicon dioxide and silicon nitride, preferably silicon dioxide, wherein the physical deposition process is selected from one of LPCVD, APCVD, PECVD and PVD, preferably LPCVD and PECVD, and photolithography and dry etching processes are used to etch and penetrate the first insulating layer 5 to form a through hole 83.

[0036] Further, in some embodiments, a second insulating layer 7 is first deposited on the surface of the pressure-sensing portion 2, and then a first insulating layer 5 is deposited on the surface of the second insulating layer 7. A photolithography and dry etching process is used to etch and penetrate the first insulating layer 5 and the second insulating layer 7 to form a through hole 83. The first insulating layer 5 and the second insulating layer 7 are selected from at least one of silicon dioxide and silicon nitride. The first insulating layer 5 is preferably silicon dioxide, and the second insulating layer 7 is preferably silicon nitride. The first insulating layer 5 and the second insulating layer 7 are stacked and arranged, and the two have a good stress matching effect, thereby improving the impact resistance of the pressure-sensing portion 2 and extending the service life of the pressure sensor chip. Specifically, Figure 4 and Figure 5 shown.

[0037] In some embodiments, the method for manufacturing a pressure sensor chip further includes the following steps:

[0038] The lead-out portion 8 is physically deposited on at least part of the surface of the first insulating layer; the lead-out portion 8 includes a first lead-out portion 81, a second lead-out portion 82 and a through hole 83; the first lead-out portion 81 passes through the first insulating layer 5 through the through hole 83 and is connected to the conductive resistor 4, at least part of the first lead-out portion 81 is located in the through hole 83, and along the thickness direction Z of the pressure sensor chip, the second lead-out portion 82 covers at least part of the surface of the first insulating layer 5;

[0039] The composite metal layer 9 covers at least a portion of the surface of the second lead-out portion 82 . Along the thickness direction Z of the pressure sensor chip, the composite metal layer 9 is away from the first insulating layer 5 relative to the second lead-out portion 82 .

[0040] In some embodiments, the pressure sensor chip includes a lead-out portion 8, the lead-out portion 8 is deposited on at least a portion of the surface of the first insulating layer 5, and the first lead-out portion 81 is deposited on at least a portion of the surface of the conductive resistor 4 through the through hole 83. The first lead-out portion 81 passes through the first insulating layer 5 through the through hole 83, and the second lead-out portion 82 is deposited on at least a portion of the surface of the first insulating layer 5 along the thickness direction Z of the pressure sensor chip. The materials of the first lead-out portion 81 and the second lead-out portion 82 are selected from at least one of aluminum, silver and gold, preferably aluminum; a composite metal layer 9 is deposited on at least a portion of the surface of the second lead-out portion 82, wherein the metal of the composite metal layer 9 is selected from at least two of aluminum, zinc, nickel, iron, silver, copper and gold, preferably copper, nickel, tin and silver. The electrical signal can be output from the conductive resistor 4 through the first lead-out portion 81, the second lead-out portion 82 and the composite metal layer 9 in sequence, and the pressure sensor chip can be connected to the substrate by a front wire binding process or a solder joint process.

[0041] like Figure 5As shown, in some embodiments, the pressure sensor chip includes a lead portion 8, the lead portion 8 is deposited on at least a portion of the surface of the first insulating layer 5, the first lead portion 81 is deposited on at least a portion of the surface of the conductive resistor 4 through the through hole 83, the first lead portion 81 passes through the first insulating layer 5 and the second insulating layer 7 through the through hole 83, and the second lead portion 82 is deposited on at least a portion of the surface of the first insulating layer 5 along the thickness direction Z of the pressure sensor chip. Relative to the second lead portion 82, the composite metal layer 9 is away from the first insulating layer 5, and the first lead portion 81 and the second lead portion 8 2 is made of at least one of aluminum, silver and gold, preferably aluminum; a composite metal layer 9 is covered on at least part of the surface of the second lead-out portion 82, wherein the metal of the composite metal layer 9 is selected from at least two of aluminum, zinc, nickel, iron, silver, copper and gold, preferably copper, nickel, tin and silver, that is, copper, nickel, tin and silver are deposited on at least part of the surface of the first insulating layer 5 in sequence, and the electrical signal can be output from the conductive resistor 4 through the first lead-out portion 81, the second lead-out portion 82 and the composite metal layer 9 in sequence, and the pressure sensor chip can be connected to the substrate by a front wire binding process or a solder joint process.

[0042] Further, in some embodiments, the deposition process of the first lead-out portion 81 , the second lead-out portion 82 and the composite metal layer 9 is selected from one of PVD, CVD, ECD and ALD.

[0043] In some embodiments, a connector 12 is connected to at least a portion of the surface of the composite metal layer 9. The connector 12 is connected to at least a portion of the surface of the composite metal layer 9 using a reflow soldering process. The connector 12 is preferably a solder ball. The connector 12 is at least partially located on the outside of the composite metal layer 9 to output electrical signals.

[0044] In some embodiments, a protective layer 10 is deposited on the surface of the first insulating layer 5, the second lead portion 82 and the composite metal layer 9 along the thickness direction Z of the pressure sensor chip, wherein the protective layer 10 wraps the second lead portion 82 and the composite metal layer 9, and the connector 12 is at least partially located on the outside of the protective layer 10. The protective layer 10 is selected from at least one of silicon dioxide and silicon nitride, preferably silicon nitride. On the one hand, the second lead portion 82 and the composite metal layer 9 are prevented from contacting the outside world to protect the composite metal layer from being contaminated by external impurities, thereby achieving the purpose of waterproofing and dustproofing. On the other hand, it can also form a good stress matching effect with the first insulating layer 5, the second insulating layer 7 or the third insulating layer 11; wherein the deposition process of the protective layer 10 can be selected from one of LPCVD, APCVD, PECVD, ECD and PVD, preferably LPCVD.

[0045] In some embodiments, a cavity 6 is etched out of the substrate 1 by a dry etching process or a wet etching process, and the substrate 1 with the cavity 6 is bonded to the pressure-sensing part 2. The bonding method can be physical and chemical bonding, and the bonding process used can be selected from gold-silicon eutectic bonding, silicon / glass anodic bonding, silicon / silicon direct bonding, and glass solder sintering processes; silicon / glass anodic bonding process and silicon / silicon direct bonding process are preferred.

[0046] Further, in some embodiments, specifically as Figure 6 As shown, a third insulating layer 11 is deposited on the surface of the substrate 1 by a physical deposition process, and then a cavity 6 is etched through the third insulating layer 11 by a dry etching process or a wet etching process, and then the substrate 1 having the cavity 6 and deposited with the third insulating layer 11 is bonded to the pressure-sensing part 2, wherein the third insulating layer 11 is selected from at least one of silicon dioxide and silicon nitride, preferably silicon dioxide; the bonding process used can be selected from gold-silicon eutectic bonding, silicon / glass anode bonding, silicon / silicon direct bonding, and glass solder sintering, preferably silicon / glass anode bonding, and the physical deposition process can be selected from LPCVD, APCVD, PECVD, and PVD, preferably LPCVD.

[0047] In some embodiments, a third insulating layer 11 is deposited on the surface of the substrate 1, and then a cavity 6 is etched out, and then the substrate 1 and the pressure sensing part 2 are bonded. On the one hand, the substrate 1 and the pressure sensing part 2 can be tightly combined to improve the firmness and stability of the pressure sensor chip. On the other hand, the stress matching effect of the first insulating layer 5, the second insulating layer 7 and the third insulating layer 11 in the pressure sensor chip can be improved, and the residual stress in the pressure sensor chip can be reduced, thereby improving the service life of the pressure sensor chip.

[0048] The above implementation modes are only used to illustrate the present application and are not intended to limit the technical solutions described in the present application. The understanding of the present application should be based on the technical personnel in the relevant technical field. Although the present application has been described in detail in this specification with reference to the above implementation modes, ordinary technical personnel in the field should understand that the technical personnel in the relevant technical field can still modify or make equivalent substitutions to the present application, and all technical solutions and improvements thereof that do not depart from the spirit and scope of the present application should be included in the scope of the claims of the present application.

Claims

1. A pressure sensor chip, characterized in that: The pressure sensor chip comprises a substrate, a pressure sensing part, a sensitive resistor, a composite metal layer and a connecting piece, wherein the substrate is arranged on one side of the pressure sensing part; the sensitive resistor is arranged on the pressure sensing part; The sensitive resistor is connected to the composite metal layer, the composite metal layer is connected to the connecting piece, and the composite metal layer includes at least two metals; The pressure sensor chip has a cavity, and the pressure sensing portion is at least partially exposed to the cavity.

2. The pressure sensor chip according to claim 1, characterized in that: The pressure sensor chip includes a conductive resistor, and the sensitive resistor is arranged in contact with the conductive resistor; The pressure sensor chip comprises a first insulating layer and a lead-out portion, wherein the first insulating layer and the lead-out portion are both arranged at the pressure sensing portion; the lead-out portion is connected to the composite metal layer; The lead-out portion includes a first lead-out portion and a second lead-out portion, the first insulating layer has a through hole, at least a portion of the first lead-out portion is located in the through hole, the first lead-out portion is connected to the conductive resistor, the first lead-out portion and the second lead-out portion are an integral piece, and along the thickness direction of the pressure sensor chip, the first insulating layer is closer to the pressure sensing portion than the second lead-out portion; The first insulating layer is selected from at least one of silicon dioxide and silicon nitride.

3. The pressure sensor chip according to claim 2, characterized in that: The composite metal layer covers at least a portion of the surface of the second lead-out portion, and along the thickness direction of the pressure sensor chip, the composite metal layer is away from the first insulating layer relative to the second lead-out portion; The lead-out portion is made of aluminum or copper or an aluminum-copper alloy; the metal in the composite metal layer is selected from at least two of aluminum, zinc, nickel, silver, copper and gold.

4. The pressure sensor chip according to claim 3, characterized in that: The pressure sensor chip includes a protective layer, and along the thickness direction of the pressure sensor chip, the protective layer covers at least part of the surface of the first insulating layer and the second lead-out portion, and along the thickness direction of the pressure sensor chip, the protective layer covers the surface of the second lead-out portion and the composite metal layer; The protective layer is selected from at least one of silicon dioxide and silicon nitride.

5. The pressure sensor chip according to any one of claims 2 to 4, characterized in that: The connecting member is connected to at least a portion of the surface of the composite metal layer, and along the thickness direction of the pressure sensor chip, the connecting member is away from the first insulating layer relative to the second lead-out portion; The connecting member is at least partially located outside the composite metal layer, or the connecting member is exposed to the outside of the pressure sensor chip.

6. The pressure sensor chip according to claim 5, characterized in that: The composite metal layer is partially embedded in the protective layer, the composite metal layer is at least partially connected to the connecting member, and the second lead-out portion is embedded in the protective layer; the connecting member is at least partially exposed to the outside of the protective layer, and there is a gap between at least parts of at least two adjacent protective layers; Along the thickness direction of the pressure sensor chip, the connecting member is away from the first insulating layer relative to the protection layer.

7. The pressure sensor chip according to any one of claims 2 to 4, characterized in that: The pressure sensor chip includes a second insulating layer, and the second insulating layer is arranged between the first insulating layer and the pressure sensing part; or, The first lead portion passes through the first insulating layer and the second insulating layer through the through hole and is connected to the sensitive resistor; The second insulating layer is selected from at least one of silicon dioxide and silicon nitride.

8. The pressure sensor chip according to claim 7, characterized in that: The pressure sensor chip comprises a third insulating layer, wherein the third insulating layer is disposed between the substrate and the pressure sensing portion, and along a thickness direction of the pressure sensor chip, the first insulating layer is farther away from the third insulating layer than the second insulating layer; The third insulating layer is selected from at least one of silicon dioxide and silicon nitride.

9. The pressure sensor chip according to claim 8, characterized in that: The pressure sensor chip includes a conductive resistor, and the sensitive resistor is arranged in contact with the conductive resistor; At least parts of the sensitive resistor and the conductive resistor are embedded in the pressure sensing portion, and the sensitive resistor and the conductive resistor are arranged in contact with the second insulating layer; along the thickness direction of the pressure sensor chip, the sensitive resistor and the conductive resistor are away from the third insulating layer relative to the second insulating layer; The cavity penetrates the third insulating layer, and at least a portion of the cavity is located on the substrate.

10. The pressure sensor chip according to claim 9, characterized in that: The sensitive resistor and the conductive resistor are both silicon doped with boron, and the concentration of boron doped in the conductive resistor is greater than the concentration of boron doped in the sensitive resistor; The substrate and the pressure-sensing portion are both made of silicon or silicon carbide, and the cavity is in a vacuum.

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