Dispersion plate, semiconductor equipment current sharing box design method and semiconductor equipment

Abstract

The invention discloses a dissipation plate, a semiconductor equipment flow equalizing box design method and semiconductor equipment, and relates to the technical field of semiconductor equipment, the dissipation plate is applied to a flow equalizing box, the flow equalizing box is provided with a flow inlet and a flow outlet, and the dissipation plate is used for being arranged in a flow equalizing cavity of the flow equalizing box. The projection of the dissipation plate in the thickness direction is used for covering the flow inlet of the flow equalizing box, the side face of the side, facing the flow inlet in the thickness direction, of the dissipation plate is used for being enclosed with the inner wall face of the flow equalizing box to form a transition cavity, and at least one first open hole is formed in the dissipation plate. The at least one first hole penetrates through the dissipation plate in the thickness direction of the dissipation plate so as to communicate with the transition cavity and the space, located on the other side, away from the flow inlet, of the dissipation plate, in the flow equalizing cavity. Through the design of the dissipation plate, the fluid is rapidly dispersed by the dissipation plate after entering the fluid inlet, and the uniformity of a flow field of the fluid flowing out of the fluid outlet is improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to a dissipation plate, a design method for a current equalizing box for semiconductor equipment, and semiconductor equipment. Background Art

[0002] Semiconductor measurement equipment has high requirements for the temperature and cleanliness of the environment. Usually, the environmental control module first outputs a temperature-stable fluid, then inputs the temperature-controlled fluid into a flow equalizing box for filtration, and finally inputs it into the measurement area. The flow equalizing box usually includes an air inlet, an outlet, a flow equalizing plate, and a filter. The temperature-controlled fluid enters the flow equalizing box through the air inlet and is filtered by the filter before flowing out of the outlet. In order to ensure the accuracy of the measurement results, the flow field of the outlet needs to be uniform. However, the uniformity of the flow field after the fluid flows out of the flow equalizing box is currently poor. Summary of the invention

[0003] The present application provides a dissipation plate, a semiconductor device flow box design method and a semiconductor device. By designing the dissipation plate, the fluid is quickly dispersed by the dissipation plate after entering the inlet, thereby improving the uniformity of the flow field after the fluid flows out of the outlet.

[0004] In the first aspect, the present application provides a dissipation plate, which is applied to a flow equalizing box, and the flow equalizing box is provided with an inlet and an outlet, and the dissipation plate is used to be arranged in the flow equalizing cavity of the flow equalizing box, and the projection of the dissipation plate along the thickness direction is used to cover the inlet of the flow equalizing box, and the side surface of the dissipation plate along the thickness direction facing the inlet is used to enclose with the inner wall surface of the flow equalizing box to form a transition cavity, and at least one first opening is provided on the dissipation plate, and the at least one first opening passes through the dissipation plate along the thickness direction of the dissipation plate to connect the transition cavity and the space in the flow equalizing cavity located on the other side of the dissipation plate away from the inlet.

[0005] The present application provides a dissipation plate, which is arranged in the flow balancing chamber of the flow balancing box, and divides the flow balancing chamber into a transition chamber and another side space. After the fluid flows in from the inlet, it enters the transition chamber. Under the action of the dissipation plate, the fluid quickly disperses and flows from the first opening into the other side space, and finally flows out from the outlet. The dissipation plate improves the uniformity of the flow field after the fluid flows out from the outlet.

[0006] In a possible implementation, the dissipation plate includes a first guide plate and a second guide plate, the first guide plate and the second guide plate are connected obliquely, and the first opening is provided on both the first guide plate and the second guide plate. The first guide plate and the second guide plate are both inclined to increase the contact area between the fluid and the dissipation plate, so that the fluid flowing in from the inlet is dispersed by the dissipation plate more quickly. The first opening is provided on both the first guide plate and the second guide plate, so that the fluid can be quickly dispersed from the first opening on the dissipation plate.

[0007] In a possible implementation, the length of the first guide plate along the thickness direction of the dissipation plate is greater than or equal to the length of the second guide plate, so that the dissipation plate can be fixedly connected to the inner wall of the flow equalizing box and enclosed to form a transition cavity.

[0008] In a possible implementation, the dissipation plate includes two of the first guide plates and two of the second guide plates, the two second guide plates are located between the two first guide plates, the two sides of each second guide plate are obliquely connected to one of the first guide plates and another second guide plate, and the two first guide plates and the two second guide plates are connected to form a W-shaped structure. The W-shaped dissipation plate cover is provided at the inlet, and the W-shaped structure can provide more surface area, which is conducive to the rapid dissipation of the fluid through the dissipation plate.

[0009] In a possible implementation, the length of the first guide plate along the arrangement direction of the first guide plate and the second guide plate is smaller than the length of the second guide plate. The inclination of the first guide plate is smaller than the inclination of the second guide plate. The two second guide plates are located between the two first guide plates. When the fluid enters the transition chamber from the inlet, it first contacts the second guide plate. The length of the first guide plate along the arrangement direction of the first guide plate and the second guide plate is smaller than the length of the second guide plate. The second guide plate has a larger surface area, which is more conducive to dispersing the fluid.

[0010] In the second aspect, the present application provides a flow equalizing box, which has a flow equalizing cavity therein, and is provided with an inlet and an outlet, the inlet, the flow equalizing cavity and the outlet are connected in sequence, the flow equalizing box is provided with a flow equalizing plate and the dissipation plate described in any one of the first aspects above, the flow equalizing plate is provided with at least one second opening, the dissipation plate is located between the inlet and the flow equalizing plate, the dissipation plate is formed by a side surface along the thickness direction facing the inlet and the inner wall surface of the flow equalizing box to form a transition cavity, the inlet, the transition cavity, the first opening of the dissipation plate, the second opening of the flow equalizing plate and the outlet are connected in sequence.

[0011] The flow equalizing box provided in the present application includes a dissipation plate and a flow equalizing plate. The dissipation plate and the flow equalizing plate are arranged in the flow equalizing cavity of the flow equalizing box at intervals along the thickness direction. The fluid flows in from the inlet and enters the transition cavity. The fluid quickly disperses under the action of the dissipation plate and flows out from the first opening. Then the fluid is dispersed into a more uniform fluid by the second opening on the flow equalizing plate and finally flows out from the outlet, thereby improving the uniformity of the flow field after the fluid flows out from the outlet.

[0012] In a possible implementation, the flow equalizing box includes a square box body, the flow equalizing box includes a first side and a second side, the first side and the second side are perpendicular and connected, the vertical distance between the inlet and the first side is less than half the length of the second side, and the length of the dissipation plate is equal to the length of the first side or the second side. The inlet is set at a non-central position on the wall of the flow equalizing box, and the uniformity of the flow field at the outlet will be affected. When the fluid flows into the flow equalizing box from the inlet, under the action of the dissipation plate, the fluid disperses and continues to flow to the outlet. The length of the dissipation plate is relatively long, which is conducive to the rapid dispersion of the fluid. The dispersed fluid is divided by the flow equalizing plate into a more uniform fluid that flows out of the outlet, ensuring that the uniformity of the flow field at the outlet is better. Even if the inlet is not centered on the wall of the flow equalizing box, the uniform distribution and flow control of the fluid in the flow equalizing box can be effectively achieved, so that the fluid can flow out of the outlet evenly, providing a stable fluid environment for the semiconductor equipment, which is conducive to improving the operating efficiency and production quality of the semiconductor equipment.

[0013] In a third aspect, the present application provides a method for designing a current equalizing box for a semiconductor device, which is used to determine the size data of the dissipation plate in the current equalizing box described in the implementation method of the second aspect, comprising the following steps:

[0014] Determine the maximum pressure drop value ΔPm of the current equalizing box system;

[0015] Determine a second opening ratio η2 of the second opening on the flow balancing plate, and determine a first pressure drop value ΔP1 of the flow balancing plate according to the second opening ratio η2;

[0016] Determine the maximum pressure drop value ΔP2 of the dissipation plate according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1;

[0017] Determining a minimum value of the first opening ratio η1 of the dissipation plate according to the maximum pressure drop value ΔP2;

[0018] According to the size of the inlet of the flow equalizing box, the maximum values ​​of the first height Y1, the second height Y2 and the distance X1 are determined, the first height Y1 is the distance between the vertex of the outer wall of the dissipation plate and the most concave point of the transition cavity along the thickness direction of the dissipation plate, the second height Y2 is the distance between the most concave point of the transition cavity and the edge of the dissipation plate along the thickness direction of the dissipation plate, the distance X1 is the distance between the most concave point and the edge of the dissipation plate along the first direction, the first direction is the direction from the edge of the inlet toward the hole of the inlet, and multiple groups of data are selected within the range for orthogonal experiments on the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1, the velocity uniformity A of each group of experiments is calculated, and the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 data corresponding to the velocity uniformity minimum value A0 are determined to determine the size data of the dissipation plate.

[0019] The dissipation plate can allow the fluid to enter the flow equalizing box from the inlet, and disperse under the action of the dissipation plate to make the fluid distribution more uniform. Then the fluid is evenly distributed by the flow equalizing plate, and the fluid can flow out of the outlet more evenly under the joint action of the dissipation plate and the flow equalizing plate. By determining the maximum pressure drop value ΔPm, the second opening ratio η2 and the first pressure drop value ΔP1, and then determining the maximum pressure drop value ΔP2 of the dissipation plate and the minimum value of the first opening ratio η1 according to these parameters, finally the optimal design of the dissipation plate is determined through orthogonal experiments. The size design of the dissipation plate and the layout design method of the first opening can cooperate with the layout design method of the second opening of the flow equalizing plate on the premise of ensuring that the pressure drop of the flow equalizing box system meets the requirements, to design a flow equalizing box with better flow equalization effect, ensure the flow stability and uniformity of the fluid in the flow equalizing box, provide a more stable fluid environment for semiconductor equipment, and help improve the production efficiency and performance stability of semiconductor equipment.

[0020] In a possible implementation, the step of determining the second opening ratio η2 of the second opening on the current equalizing plate includes:

[0021] Determine the total area S of the surface of the equalizing plate where the second openings are set and the total area S1 of all the second openings on the equalizing plate, and the second opening ratio η2 = S1 / S. The second opening ratio η2 is the ratio of the total area S of the surface of the second openings to the total area S1 of all the second openings on the equalizing plate. After determining the single hole area S0 of each second opening, the second opening ratio η2 can be calculated by this calculation formula.

[0022] In a possible implementation, the step of determining the first pressure drop value ΔP1 of the flow balancing plate according to the second opening ratio η2 includes:

[0023] The first pressure drop value ΔP1 of the current equalizing plate is calculated according to the second opening ratio η2, and the calculation formula includes:

[0024]

[0025] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0026] After the inlet diameter φ and the second opening ratio η2 are determined, the first pressure drop value ΔP1 can be calculated using the calculation formula.

[0027] In a possible implementation, the step of determining the maximum pressure drop value ΔP2 of the dissipation plate according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1 includes:

[0028] The maximum pressure drop value ΔP2 of the dissipation plate is calculated according to the maximum pressure drop value ΔPm of the flow equalizing box system and the first pressure drop value ΔP1, and the calculation formula includes:

[0029] ΔP2=ΔPm-ΔP1.

[0030] The maximum pressure drop value ΔPm is the sum of the first pressure drop value ΔP1 and the maximum pressure drop value ΔP2. After determining the maximum pressure drop value ΔPm of the flow equalizing box system and the first pressure drop value ΔP1 of the flow equalizing plate, the maximum pressure drop value ΔP2 of the dissipation plate can be calculated by this formula.

[0031] In a possible implementation, the step of determining the minimum value of the first opening ratio η1 of the dissipation plate according to the maximum pressure drop value ΔP2 of the dissipation plate includes:

[0032] The minimum value of the first opening ratio η1 of the dissipation plate is calculated according to the maximum pressure drop value ΔP2 of the dissipation plate, and the calculation formula includes:

[0033]

[0034] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0035] After determining the maximum pressure drop value ΔP2 of the dissipation plate, the minimum value of the first opening ratio η1 can be calculated using the calculation formula.

[0036] In a possible implementation, the speed average value A of each group of tests is calculated according to the orthogonal experiment, and the calculation formula includes:

[0037]

[0038] Where N1 is the number of measuring points; v i is the instantaneous velocity at measuring point i; v is the average velocity of all measuring points.

[0039] Based on the orthogonal experimental results, the design dimension data of the dissipation plate can be finally determined, including the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1. The design dimension data of the dissipation plate is applied to the design and manufacture of the dissipation plate to ensure that in practical applications, the dissipation plate can effectively promote the uniform distribution of airflow, achieve the best uniformity of airflow velocity distribution, and improve the performance of semiconductor equipment.

[0040] In a fourth aspect, the present application further provides a method for designing a current equalizing box for a semiconductor device, which is used to determine the size data of the current equalizing plate in the current equalizing box described in any embodiment of the second aspect, comprising the following steps:

[0041] Determine the number N of second openings on the flow equalizing plate and the second opening position of each second opening;

[0042] Determine the single hole flow Q0 corresponding to each second opening according to the inlet flow Q of the flow balancing box and the number N of second openings on the flow balancing plate;

[0043] Determine a single hole flow rate Vi at each second opening, and determine a single hole area S0 of each second opening according to the single hole flow rate Q0 and the single hole flow rate Vi;

[0044] The second opening layout of the flow equalizing plate is determined according to the second opening number N, the second opening position of each second opening and the single hole area S0.

[0045] The semiconductor equipment flow equalizing box design method provided in the present application can determine the number N of second openings on the flow equalizing plate, the position of each second opening and the single hole area S0, so that the design of the second openings on the flow equalizing plate is more reasonable, and can effectively achieve uniform distribution and flow control of the fluid in the flow equalizing box, so that the fluid can flow out evenly from the outlet, providing a stable fluid environment for the semiconductor equipment, which is beneficial to improving the operating efficiency and production quality of the semiconductor equipment.

[0046] In a possible implementation, the step of determining the single hole flow velocity Vi at each second opening includes:

[0047] Determine the size of the flow balancing box and the diameter of the flow inlet to form a three-dimensional model of the flow balancing box;

[0048] Establish a CFD simulation model of the flow equalizing box;

[0049] The three-dimensional model is divided into finite element meshes and input into the CFD simulation model, and boundary conditions and model parameters are determined to obtain a simulation velocity cloud diagram at the outlet of the flow balancing box;

[0050] In the simulation velocity cloud diagram, the single hole flow velocity Vi at each second opening is determined according to the number N of second openings on the flow balancing plate and the second opening positions.

[0051] By establishing a CFD simulation model of the flow equalizer and performing finite element meshing, the flow of the fluid inside the flow equalizer can be simulated, thereby obtaining a simulated velocity cloud map at the outlet of the flow equalizer. The single-hole flow velocity Vi at each second opening can be calculated using the simulated velocity cloud map. Using the CFD simulation model for calculation and optimization design saves cost and time and improves the accuracy of the design.

[0052] In a possible implementation, the step of determining the size of the flow equalizing box includes: the flow equalizing box is a rectangular box, the size of the flow equalizing box includes the length L, width W and height H of the flow equalizing box, a filter is arranged in the flow equalizing box, the filter is located on the side of the flow equalizing plate away from the flow inlet, the surface of the filter facing the flow equalizing plate is at a distance H0 from the outer wall of the flow equalizing box in the height direction of the flow equalizing box, the height of the filter is H1, the height H of the flow equalizing box is H=H0+H1, H0 is determined to be greater than or equal to the third height H2, and the height H≥H2+H1 of the flow equalizing box is determined. The filter is used to filter the fluid in the flow equalizing box to ensure that clean fluid flows out from the outlet. The filter is located in the flow equalizing box, and the size of the filter affects the design of the flow equalizing box.

[0053] In a possible implementation, the calculation formula for determining the single hole area S0 of each first opening according to the single hole flow Q0 and the single hole flow velocity Vi includes:

[0054] S=Q0 / Vi.

[0055] The single hole area S0 of the first opening can be calculated by this calculation formula.

[0056] In a possible implementation, the calculation formula for determining the single hole flow Q0 corresponding to each first opening according to the inlet flow Q of the flow balancing box and the number N of first openings on the flow balancing plate includes:

[0057] Q0=Q / N.

[0058] The single hole flow Q0 can be calculated by this calculation formula.

[0059] In a fifth aspect, the present application provides a semiconductor device, comprising an environmental control module and a flow equalizing box as described in any embodiment of the second aspect, wherein the outlet of the environmental control module is connected to the inlet of the flow equalizing box, the environmental control module is used to inject fluid into the flow equalizing box, and the outlet of the flow equalizing box is used to discharge the fluid injected by the environmental control module. The environmental control module can deliver a temperature-stable fluid to the inlet, and after the fluid enters from the inlet, it quickly disperses under the action of the dissipation plate and flows in and out from the first opening, and then the fluid is dispersed into a more uniform fluid by the second opening on the flow equalizing plate, and finally flows out from the outlet, thereby improving the uniformity of the flow field after the fluid flows out from the outlet, providing a more stable fluid environment for the semiconductor device, and being conducive to improving the production efficiency and performance stability of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1 It is a schematic diagram of the structure of the flow equalizing box provided in the embodiment of the present application;

[0061] Figure 2 It is a schematic diagram of the top view structure of the flow equalizing box provided in the embodiment of the present application;

[0062] Figure 3 This application provides Figure 2 Cross-sectional view at AA in the middle;

[0063] Figure 4 It is a schematic diagram of the structure of the dissipation plate provided in the embodiment of the present application;

[0064] Figure 5 It is a schematic diagram of the structure of the dissipation plate provided in the embodiment of the present application;

[0065] Figure 6 is another structural schematic diagram of the dissipation plate provided in the embodiment of the present application;

[0066] Figure 7 is another structural schematic diagram of the dissipation plate provided in the embodiment of the present application;

[0067] Figure 8 is an exploded schematic diagram of a flow equalizing box provided in an embodiment of the present application;

[0068] Fig. 9 This application provides Figure 2 Cross-sectional view at AA in the middle;

[0069] Fig.10 is a schematic diagram of the position of the inlet provided in the embodiment of the present application;

[0070] Fig.11 This application provides Figure 2 Cross-section at the middle BB;

[0071] Fig.12 It is a flowchart schematic diagram of a method for designing a current equalizing box for a semiconductor device provided in an embodiment of the present application;

[0072] Fig.13 It is a schematic diagram of the structure of the dissipation plate provided in the embodiment of the present application;

[0073] Fig.14 It is a flowchart schematic diagram of a method for designing a current equalizing box for a semiconductor device provided in an embodiment of the present application;

[0074] Fig.15 Schematic diagram of the position of the second opening of the current equalizing plate provided in an embodiment of the present application;

[0075] Fig.16 is a schematic diagram of a flow chart for determining a single hole flow rate at each second opening provided by an embodiment of the present application;

[0076] Fig.17 It is a schematic diagram of the dimensions of the filter provided in the embodiment of the present application;

[0077] Fig.18 It is a schematic diagram of the current equalizing plate structure provided in the implementation mode of the present application.

[0078] Description of reference numerals:

[0079] 10-flow equalizing box; 11-flow inlet; 12-flow outlet; 13-first side; 14-second side;

[0080] 100-dissipation plate; 101-flow-averaging chamber; 102-transition chamber; 103-other side space; 110-first opening; 120-first guide plate; 130-second guide plate; 150-vertex of outer wall;

[0081] 1021 - the most concave point;

[0082] 200 - flow equalizing plate; 210 - second opening; 300 - filter; 400 - sheet metal structure. DETAILED DESCRIPTION

[0083] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0084] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of the present application are explained and described below.

[0085] It should be clear that the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0086] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0087] It should be understood that the term "and / or" used in this article is only a description of the same field of the associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0088] The word "if" as used herein may be interpreted as "when" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when determining" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0089] It should be understood that the terms “first”, “second”, etc. used in the present application are only used for the purpose of distinguishing the description, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying an order.

[0090] In the description of the present application, the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0091] When used in this application, “within the range of…”, unless it is separately specified that an end value is not included, it is assumed that both end values ​​of the range are included. For example, in the range of 1 to 5, the two values ​​1 and 5 are included.

[0092] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, a conflicting connection or an integrated connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0093] See also Figure 1 , Figure 2 and Figure 3 As shown, the flow balancing box 10 has a flow balancing chamber 101, and the flow balancing box 10 is provided with an inlet 11 and an outlet 12. The inlet 11, the flow balancing chamber 101 and the outlet 12 are connected in sequence, and the fluid flows into the flow balancing chamber 101 from the inlet 11 of the flow balancing box 10, and then flows out of the flow balancing chamber 101 from the outlet 12. In order to ensure the accuracy of the measurement results, the flow field of the outlet 12 needs to be uniform, but currently the uniformity of the flow field after the fluid flows out of the flow balancing box 10 is poor.

[0094] To solve the above problems, see Figure 1 , Figure 2 and Figure 3 As shown, the present application provides a dissipation plate 100, which is applied to a flow balancing box 10 to improve the uniformity of the flow field. The flow balancing box 10 is provided with an inlet 11, an outlet 12 and a flow balancing chamber 101. The inlet 11 is located on the wall of the flow balancing box 10. The inlet 11 can be located at any position on the wall of the flow balancing box 10, for example, at a corner of the wall of the flow balancing box 10, or at the side of the wall of the flow balancing box 10, or at the center of the wall of the flow balancing box 10. Figure 1 The inlet 11 shown in the figure is for illustration only. The inlet 11 can be set as a circular hole. The circular inlet is conducive to the uniformity of the flow field. The fluid flows into the flow equalizing chamber 101 from the inlet 11 of the flow equalizing box 10, and then flows out of the flow equalizing chamber 101 from the outlet 12. The dissipation plate 100 is used to be arranged in the flow equalizing chamber 101 of the flow equalizing box 10 and is located on the side of the inlet 11 facing the flow equalizing plate 200. The dissipation plate 100 can separate the flow equalizing chamber 101.

[0095] The projection of the dissipation plate 100 along the thickness direction is used to cover the inlet 11 of the flow equalizing box 10 to ensure that the fluid flowing in from the inlet 11 can all flow through the dissipation plate 100. The side surface of the dissipation plate 100 facing the inlet 11 along the thickness direction is used to enclose the inner wall surface of the flow equalizing box 10 to form a transition cavity 102. The inlet 11 is located in the transition cavity 102, and the fluid flowing in from the inlet 11 directly contacts the dissipation plate. The side surface of the dissipation plate 100 facing the inlet 11 along the thickness direction can be fixedly connected to the inner wall surface of the flow equalizing box 10, so that the dissipation plate 100 is fixed in the flow equalizing cavity 101. In one embodiment, the side surface of the dissipation plate 100 facing the inlet 11 along the thickness direction is sealedly connected to the inner wall surface of the flow equalizing box 10 to prevent the fluid from flowing out from the connection between the dissipation plate 100 and the inner wall surface of the flow equalizing box 10.

[0096] See also Figure 3 and Figure 4As shown, at least one first opening 110 is provided on the dissipation plate 100, and the at least one first opening 110 penetrates the dissipation plate 100 along the thickness direction of the dissipation plate 100 to connect the transition cavity 102 and the space 103 in the flow equalization cavity 101 located on the other side of the dissipation plate 100 away from the inlet 11. The shape of the first opening 110 includes but is not limited to at least one of a circular hole, a square hole or a waist-shaped hole.

[0097] The inlet 11, the transition cavity 102, the other side space 103 and the outlet 12 are connected in sequence. Figure 3 The dotted arrows in the figure show the path of the fluid: the fluid enters the transition chamber 102 of the flow equalizing box 10 from the inlet 11, then flows into the space 103 on the other side of the flow equalizing chamber 101 of the flow equalizing chamber 101 away from the inlet 11 through the first opening 110 on the dissipation plate 100, and then flows out from the outlet 12. The fluid is dispersed under the action of the dissipation plate 100, making the fluid distribution more uniform.

[0098] The present application provides a dissipation plate 100, which is arranged in the flow balancing chamber 101 of the flow balancing box 10, and divides the flow balancing chamber 101 into a transition chamber 102 and a space 103 on the other side. After the fluid flows in from the inlet 11, it enters the transition chamber 102. Under the action of the dissipation plate 100, the fluid quickly disperses and flows from the first opening 110 into the space 103 on the other side, and finally flows out from the outlet 12. The dissipation plate 100 improves the uniformity of the flow field after the fluid flows out from the outlet 12.

[0099] In one possible implementation, see Figure 3 and Figure 4 As shown, the dissipation plate 100 includes a first guide plate 120 and a second guide plate 130, the first guide plate 120 and the second guide plate 130 are connected obliquely, and the first guide plate 120 and the second guide plate 130 are both arranged obliquely relative to the inlet 11. The first guide plate 120 and the second guide plate 130 are both arranged obliquely to increase the contact area between the fluid and the dissipation plate 100, so that the fluid flowing in from the inlet 11 is dispersed by the dissipation plate 100 more quickly. The first guide plate 120 and the second guide plate 130 are connected obliquely, and it can be understood that the first guide plate 120 and the second guide plate 130 can be connected together by bonding or welding, and the first guide plate 120 and the second guide plate 130 can also be prepared by integral molding.

[0100] The first guide plate 120 and the second guide plate 130 are both provided with a first opening 110. The first opening 110 on the first guide plate 120 penetrates the first guide plate 120 along the thickness direction of the first guide plate 120, and the first opening 110 on the second guide plate 130 penetrates the second guide plate 130 along the thickness direction of the second guide plate 130. The first opening 110 is both provided on the first guide plate 120 and the second guide plate 130, so that the fluid can be quickly dispersed from the first opening 110 on the dissipation plate 100.

[0101] In one possible implementation, see Figure 5 , Figure 6 and Figure 7 As shown, the length of the first guide plate 120 along the thickness direction of the dissipation plate 100 is greater than or equal to the length of the second guide plate 130, the first guide plate 120 and the second guide plate 130 are obliquely connected, the thickness direction of the dissipation plate 100 is the Z direction, the length of the first guide plate 120 along the Z direction is A1, the length of the second guide plate 130 along the Z direction is A2, A1 is greater than or equal to A2, so that the dissipation plate 100 can be fixedly connected to the inner wall of the flow equalizing box 10 and enclosed to form a transition cavity 102.

[0102] In one embodiment, see Figure 6 and Figure 7 As shown, the dissipation plate 100 includes a first guide plate 120 and a second guide plate 130. The first guide plate 120 and the second guide plate 130 are connected at an angle to form a V-shaped structure. Along the thickness direction of the dissipation plate 100, the length A1 of the first guide plate 120 is equal to the length A2 of the second guide plate 130, so that the dissipation plate 100 can be fixedly connected to the inner wall of the flow equalizing box 10 and enclosed to form a transition cavity 102.

[0103] In one possible implementation, see Figure 4 As shown, the dissipation plate 100 includes two first guide plates 120 and two second guide plates 130, the two second guide plates 130 are located between the two first guide plates 120, the two second guide plates 130 located between the two first guide plates 120 are connected obliquely, and the two sides of each second guide plate 130 are respectively connected obliquely with a first guide plate 120 and another second guide plate 130, and the two first guide plates 120 and the two second guide plates 130 are connected to form a W-shaped structure. The W-shaped dissipation plate 100 is covered at the inlet 11, and the W-shaped structure can provide more surface area, which is conducive to the rapid dispersion of the fluid through the dissipation plate 100.

[0104] In one embodiment, see Figure 3 , Figure 4 and Figure 5As shown, the length A1 of the first guide plate 120 along the thickness direction of the dissipation plate 100 is greater than the length A2 of the second guide plate 130. The two first guide plates 120 and the two second guide plates 130 are connected to form a W-shaped structure, the thickness direction of the dissipation plate 100 is the Z direction, the lengths of the two first guide plates 120 along the Z direction are equal, and the lengths of the two second guide plates 130 along the Z direction are equal. When the dissipation plate 100 and the inner wall surface of the flow equalizing box 10 are enclosed to form the transition chamber 102, the dissipation plate 100 is covered on the outside of the inlet 11, and the length A1 of the first guide plate 120 along the Z direction is greater than the length A2 of the second guide plate 130, and the second guide plate 130 and the inlet 11 have a gap in the Z direction, so that after the dissipation plate 100 is installed, the second guide plate 130 will not block the inlet 11, which facilitates the fluid to flow from the inlet 11 into the interior of the flow equalizing box 10.

[0105] In one possible implementation, see Figure 4 and Figure 6 As shown, the dissipation plate 100 includes a connecting plate 140, and the connecting plate 140 is located on a side of the first guide plate 120 away from the second guide plate 130. The connecting plate 140, the first guide plate 120 and the second guide plate 130 can be an integrated structure. The side surface of the connecting plate 140 along the thickness direction facing the inlet 11 is used to connect with the inner wall surface of the flow equalizing box 10 to fix the dissipation plate 100.

[0106] In one possible implementation, see Figure 5 As shown, along the arrangement direction of the first guide plate 120 and the second guide plate 130, the length of the first guide plate 120 is less than the length of the second guide plate 130. The arrangement direction of the first guide plate 120 and the second guide plate 130 is Figure 5 In the X direction, the length of the first guide plate 120 along the X direction is L1, and the length of the second guide plate 130 along the X direction is L2, L1 is smaller than L2, and the inclination of the first guide plate 120 is smaller than the inclination of the second guide plate 130. The two second guide plates 130 are located between the two first guide plates 120. When the fluid enters the transition chamber 102 from the inlet 11, it first contacts the second guide plate 130. The length of the first guide plate 120 along the X direction is smaller than the length of the second guide plate 130 along the X direction. The second guide plate 130 has a larger surface area, which is more conducive to dispersing the fluid.

[0107] The present application also provides a flow balancing box 10, see Figure 1 , Figure 2 , Figure 8 and Fig. 9As shown, the flow equalizing box 10 has a flow equalizing chamber 101, and the flow equalizing box 10 is provided with an inlet 11 and an outlet 12, and the inlet 11, the flow equalizing chamber 101 and the outlet 12 are connected in sequence, and the flow equalizing box 10 is provided with a flow equalizing plate 200 and a dissipation plate 100 described in any of the above embodiments, and the flow equalizing plate 200 is located in the flow equalizing chamber 101 of the flow equalizing box 10, and is arranged parallel to one of the inner wall surfaces of the flow equalizing box 10. The edge of the flow equalizing plate 200 abuts against the inner wall of the flow equalizing box 10, and the flow equalizing plate 200 is provided with at least one second opening 210, and the second opening 210 penetrates the flow equalizing plate 200 along the thickness direction of the flow equalizing plate 200. The shape of the second opening 210 includes but is not limited to at least one of a circular hole, a square hole or a waist-shaped hole. The dissipation plate 100 is located between the inlet 11 and the equalizing plate 200. The side surface of the dissipation plate 100 facing the inlet 11 along the thickness direction and the inner wall surface of the equalizing box 10 enclose a transition chamber 102. The inlet 11, the transition chamber 102, the first opening 110 of the dissipation plate 100, the second opening 210 of the equalizing plate 200 and the outlet 12 are connected in sequence. The fluid flows into the transition chamber 102 from the inlet 11 of the equalizing box 10, then flows through the first opening 110 of the dissipation plate 100 to the equalizing plate 200, flows from the second opening 210 on the equalizing plate 200 to the outlet 12, and finally flows out of the equalizing box 10 from the outlet. The equalizing plate 200 can make the fluid passing through the equalizing plate 200 flow out of the equalizing chamber 101 evenly from the outlet 12, provide a stable airflow for the subsequent process of the semiconductor equipment, and improve the process yield of the semiconductor equipment.

[0108] The flow equalizing box 10 provided in the present application includes a dissipation plate 100 and a flow equalizing plate 200. The dissipation plate 100 and the flow equalizing plate 200 are arranged in a flow equalizing cavity 101 of the flow equalizing box 10 at intervals along the thickness direction. The fluid flows into the transition cavity 102 after flowing in from the inlet 11. The fluid quickly disperses under the action of the dissipation plate 100 and flows out from the first opening 110. Then, the fluid is dispersed into a more uniform fluid by the second opening 210 on the flow equalizing plate 200, and finally flows out from the outlet 12, thereby improving the uniformity of the flow field after the fluid flows out from the outlet 12.

[0109] In one possible implementation, see Figure 1 and Fig.10 As shown, the current equalizing box 10 includes a square box body, the current equalizing box 10 includes a first side 13 and a second side 14, the first side 13 and the second side 14 are perpendicular and connected, and the first side 13 of the current equalizing box 10 includes a side along the X direction, a side along the Y direction, and a side along the Z direction. The second side 14 of the current equalizing box 10 includes a side along the X direction, a side along the Y direction, and a side along the Z direction.

[0110] This application takes the example that the first side edge 13 is a side edge along the X direction and the second side edge 14 is a side edge along the Y direction for description. Figure 2 , Fig.10 and Fig.11 As shown, the length of the first side 13 is L3, the length of the second side 14 is L4, the inlet 11 is arranged on the wall of the flow equalizing box 10 in the positive Z direction, and the wall where the inlet 11 is located is the XY plane. The vertical distance A3 between the inlet 11 and the first side 13 is the vertical distance between the center of the inlet 11 and the first side 13, A3 is less than half of the length L4 of the second side 14, and the inlet 11 is arranged at a non-central position on the wall of the flow equalizing box 10 in the XY plane. The length L5 of the dissipation plate 100 is equal to the length of the first side 13 or the second side 14, and the two ends of the dissipation plate 100 along the length direction are in contact with the inner wall of the flow equalizing box 10. It can be understood that the dissipation plate 100 is arranged inside the flow equalizing box 10, and when the wall thickness of the flow equalizing box 10 is ignored, the length L5 of the dissipation plate 100 is equal to the length of the first side 13 or the second side 14. This application takes the example that the length L5 of the dissipation plate 100 is equal to the length L4 of the second side 14. The dissipation plate 100 is covered on the side of the inlet 11 facing the equalizing plate 200. The inlet 11 is set at a non-central position on the wall of the equalizing box 10, and the uniformity of the flow field of the outlet 12 will be affected. When the fluid flows into the equalizing box 10 from the inlet 11, under the action of the dissipation plate 100, the fluid disperses and continues to flow to the outlet 12. The length of the dissipation plate 100 is relatively long, which is conducive to the rapid dispersion of the fluid. The dispersed fluid is divided by the equalizing plate 200 into a more uniform fluid that flows out of the outlet 12, ensuring that the uniformity of the flow field of the outlet 12 is better. Even if the inlet 11 is not centered on the wall of the equalizing box 10, the uniform distribution and flow control of the fluid in the equalizing box 10 can be effectively achieved, so that the fluid can flow out of the outlet 12 evenly, providing a stable fluid environment for semiconductor equipment, which is conducive to improving the operating efficiency and production quality of semiconductor equipment.

[0111] The present application also provides a method for designing a current balancing box for semiconductor equipment, which is used to determine the size data of the dissipation plate 100 in the current balancing box 10. Fig.12 As shown, the following steps are included:

[0112] Step S101, determining the maximum pressure drop value ΔPm of the current equalizing box system;

[0113] Step S102, determining a second aperture ratio η2 of the second opening 210 on the flow balancing plate 200, and determining a first pressure drop value ΔP1 of the flow balancing plate 200 according to the second aperture ratio η2;

[0114] Step S103, determining the maximum pressure drop value ΔP2 of the dissipation plate 100 according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1;

[0115] Step S104, determining a minimum value of the first opening ratio η1 of the dissipation plate 100 according to the maximum pressure drop value ΔP2;

[0116] Step S105, determine the maximum values ​​of the first height Y1, the second height Y2 and the distance X1 according to the size of the inlet 11 of the flow equalizing box 10, the first height Y1 is the distance between the vertex 150 of the outer wall of the dissipation plate 100 and the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100, the second height Y2 is the distance between the most concave point 1021 of the transition cavity 102 and the edge of the dissipation plate 100 along the thickness direction of the dissipation plate 100, the distance X1 is the distance between the most concave point 1021 and the edge of the dissipation plate 100 along the first direction, the first direction is the direction from the edge of the inlet 11 toward the hole of the inlet 11, and select multiple groups of data for the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 within the range for orthogonal experiments, calculate the velocity uniformity A of each group of experiments, determine the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 data corresponding to the velocity uniformity minimum value A0, so as to determine the size data of the dissipation plate 100.

[0117] By determining the maximum pressure drop value ΔPm, the second opening ratio η2 and the first pressure drop value ΔP1, and then determining the maximum pressure drop value ΔP2 of the dissipation plate 100 and the minimum value of the first opening ratio η1 according to these parameters, the optimal design scheme of the dissipation plate 100 is finally determined through orthogonal experiments. The layout design method of the first opening 110 of the dissipation plate 100 can cooperate with the layout design method of the second opening 210 of the current equalizing plate 200 to design a flow equalizing box 10 with better flow equalization effect, on the premise of ensuring that the pressure drop of the flow equalizing box system meets the requirements, to ensure the flow stability and uniformity of the fluid in the flow equalizing box 10, provide a more stable fluid environment for semiconductor equipment, and help improve the production efficiency and performance stability of semiconductor equipment.

[0118] Next, the steps of the method for determining the size data of the dissipation plate 100 in the flow balancing box 10 are described in detail:

[0119] In step S101, the maximum pressure drop value ΔPm of the current balancing box system is determined.

[0120] Specifically, during the process of airflow passing through the flow equalizing box 10, a pressure drop is generated due to the friction between the fluid and the components such as the flow equalizing plate 200, the filter 300 and the wall of the box body, as well as factors such as the shape of the flow channel. In step S101, it is necessary to determine the maximum value of the pressure drop in the flow equalizing box system, that is, the maximum pressure drop value ΔPm. This value represents the maximum pressure loss in the flow equalizing box system. By determining the maximum pressure drop value ΔPm, the pressure loss of the flow equalizing box system can be considered during the design and adjustment of the flow equalizing box system, and then the pipeline layout, fluid flow velocity and other parameters can be optimized to reduce the pressure drop and improve the efficiency of the flow equalizing box system. The maximum pressure drop value ΔPm of the system pressure drop can be determined according to the flow demand of the system, the maximum allowable pressure loss demand of the system, the overall performance demand of the system or the cost demand of the system. In this embodiment, the maximum pressure drop value ΔPm of the pressure drop of the flow equalizing box system can be in the range of 150 Pa to 300 Pa, and the maximum pressure drop value ΔPm can be 150 Pa, 200 Pa, or 300 Pa.

[0121] In step S102, a second aperture ratio η2 of the second opening 210 on the flow balancing plate 200 is determined, and a first pressure drop value ΔP1 of the flow balancing plate is determined according to the second aperture ratio η2.

[0122] Specifically, the second porosity η2 is the ratio of the total area S1 of all the second openings 210 on the equalizing plate 200 to the area S of the surface of the equalizing plate 200 on which the second openings 210 are arranged. The step of determining the second porosity η2 of the second openings 210 on the equalizing plate 200 includes: determining the total area S of the surface on which the second openings 210 are arranged on the equalizing plate 200 and the total area S1 of all the second openings 210 on the equalizing plate 200, the total area S of the surface on which the second openings 210 are arranged on the equalizing plate 200, that is, the overall area of ​​the side surface of the equalizing plate 200 in the Z direction. The total area S1 of all the second openings 210 on the equalizing plate 200 is the sum of the total areas of all the second openings 210. The second porosity η2 = S1 / S, the second porosity η2 is defined as the ratio of S1 to S, which indicates the proportion of the second openings 210 occupying the entire equalizing plate 200. After determining the total area S of the surface of the flow equalizing plate 200 where the second openings 210 are arranged, and the single hole area S0 of each second opening 210, the second opening ratio η2 can be calculated according to the calculation formula. The second opening ratio η2 can evaluate whether the distribution of the second openings 210 can achieve the expected fluid distribution effect.

[0123] The first pressure drop value ΔP1 refers to the pressure loss generated after the fluid passes through the flow balancing plate, which is related to the second opening ratio η2. The step of determining the first pressure drop value ΔP1 of the flow balancing plate 200 according to the second opening ratio η2 includes: calculating the first pressure drop value ΔP1 of the flow balancing plate 200 according to the second opening ratio η2, and the calculation formula includes:

[0124]

[0125] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0126] The calculation formula can be used to calculate the first pressure drop value ΔP1 of the flow balancing plate 200. The second opening ratio η2 can affect the first pressure drop value ΔP1. The smaller the second opening ratio η2, the narrower the channel through which the fluid passes through the flow balancing plate 200, the greater the resistance to the fluid flow, and the greater the first pressure drop value ΔP1.

[0127] The calculation process of the first pressure drop value ΔP1 is specifically described by taking specific data as an example. It can be understood that the specific data listed in this embodiment is only an example to show the specific calculation process in detail, and in some other possible embodiments, other data can also be used.

[0128] Determine the inlet flow rate Q to be 1000m 3 / h, inlet diameter According to the actual design of the flow equalizing box 10, the maximum pressure drop value ΔPm of the flow equalizing box system is selected as 200 Pa, and the second opening rate η2 of the flow equalizing plate 200 is determined to be 47.4%. By substituting the above specific data into the formula, the first pressure drop value ΔP1 can be obtained as 93.2 Pa.

[0129] In step S103, the maximum pressure drop value ΔP2 of the dissipation plate is determined according to the maximum pressure drop value ΔPm of the flow balancing box system and the first pressure drop value ΔP1.

[0130] Specifically, the maximum pressure drop value ΔPm refers to the maximum pressure loss that the entire flow equalizing box system can withstand, the first pressure drop value ΔP1 refers to the pressure loss generated after the fluid passes through the flow equalizing plate 200, and the maximum pressure drop value ΔPm is the sum of the first pressure drop value ΔP1 and the maximum pressure drop value ΔP2. The step of determining the maximum pressure drop value ΔP2 of the dissipation plate 100 according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1 includes: calculating the maximum pressure drop value ΔP2 of the dissipation plate 100 according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1, and the calculation formula includes: ΔP2=ΔPm-ΔP1. After determining the maximum pressure drop value ΔPm of the flow equalizing box 10 system in step S101 and determining the first pressure drop value ΔP1 of the flow equalizing plate 200 in step S102, the maximum pressure drop value ΔP2 of the dissipation plate 100 can be determined.

[0131] The calculation process of the first pressure drop value ΔP1 is specifically described by taking specific data as an example. It can be understood that the specific data listed in this embodiment is only an example to show the specific calculation process in detail, and in some other possible embodiments, other data can also be used.

[0132] In step S101, it can be determined that the maximum pressure drop value ΔPm of the flow equalizing box system is 200 Pa, and in step S102, it can be determined that the first pressure drop value ΔP1 is 93.2 Pa. Substituting them into the calculation formula, it can be calculated that the maximum pressure drop value ΔP2 of the dissipation plate 100 is ≤106.8 Pa.

[0133] In step S104 , the minimum value of the first opening ratio η1 of the dissipation plate 100 is determined according to the maximum pressure drop value ΔP2 of the dissipation plate 100 .

[0134] Specifically, the step of determining the minimum value of the first opening ratio η1 of the dissipation plate 100 according to the maximum pressure drop value ΔP2 of the dissipation plate 100 includes: calculating the minimum value of the first opening ratio η1 of the dissipation plate 100 according to the maximum pressure drop value ΔP2, and the calculation formula includes:

[0135]

[0136] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0137] The calculation formula can be used to calculate the minimum value of the first opening ratio η1 of the dissipation plate 100. After determining the minimum value of the first opening ratio η1, the first opening ratio η1 of the dissipation plate 100 should be greater than the minimum value to meet the maximum pressure drop requirement of the dissipation plate 100 and ensure the uniformity of the fluid.

[0138] The calculation process of the first pressure drop value ΔP1 is specifically described by taking specific data as an example. It can be understood that the specific data listed in this embodiment is only an example to show the specific calculation process in detail, and in some other possible embodiments, other data can also be used.

[0139] Determine the inlet flow rate Q to be 1000m 3 / h, inlet diameter In step S103, it can be determined that the maximum pressure drop value ΔP2 of the dissipation plate 100 is ≤106.8 Pa. By substituting the above specific data into the calculation formula, the minimum value of the first opening ratio η1 can be obtained, and the first opening ratio η1 is ≥37%.

[0140] In step S105, the maximum values ​​of the first height Y1, the second height Y2 and the distance X1 are determined according to the size of the inlet 11 of the flow equalizing box 10, the first height Y1 is the distance between the vertex 150 of the outer wall of the dissipation plate 100 and the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100, the second height Y2 is the distance between the most concave point 1021 of the transition cavity 102 and the edge of the dissipation plate 100 along the thickness direction of the dissipation plate 100, the distance X1 is the distance between the most concave point 1021 and the edge of the dissipation plate 100 along the first direction, the first direction is the direction from the edge of the inlet 11 toward the hole of the inlet 11, and multiple groups of data are selected within the range for the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 to perform orthogonal experiments, calculate the velocity uniformity A of each group of experiments, and determine the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 data corresponding to the velocity uniformity minimum value A0 to determine the size data of the dissipation plate.

[0141] See also Fig.13 As shown, in the embodiment of the present application, the dissipation plate 100 includes two first guide plates 120 and two second guide plates 130, the two second guide plates 130 are located between the two first guide plates 120, the two second guide plates 130 located between the two first guide plates 120 are connected obliquely, and the two sides of each second guide plate 130 are respectively obliquely connected with a first guide plate 120 and another second guide plate 130, and the two first guide plates 120 and the two second guide plates 130 are connected to form a W-shaped structure. The dissipation plate includes an outer side wall vertex 150, and the outer side wall vertex 150 is the highest point of the dissipation plate 100 in the positive Z direction, that is, the outer side wall vertex 150 is the intersection of the two second guide plates 130. The transition chamber 102 includes the most concave point 1021, and the most concave point 1021 is the point of the transition chamber 102 farthest from the inlet 11 in the Z direction. The distance between the vertex 150 of the outer wall of the dissipation plate 100 and the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100 is the first height Y1. The second height Y2 is the distance between the most concave point 1021 of the transition cavity 102 and the edge of the dissipation plate 100 on the side away from the connecting plate 140 along the thickness direction of the dissipation plate 100. The distance X1 is the distance between the most concave point 1021 and the edge of the first guide plate 120 of the dissipation plate 100 along the first direction, and the first direction is the direction from the edge of the inlet 11 toward the hole of the inlet 11, which is the X direction. Fig.13 The edge of the dissipation plate 100 is shown to be a flat edge. It can be understood that when the edge of the dissipation plate 100 is uneven, the distance between the most concave point 1021 along the thickness direction of the dissipation plate 100 and the edge of the dissipation plate 100 is the average distance between the most concave point 1021 along the thickness direction of the dissipation plate 100 and the edge of the dissipation plate 100.

[0142] The maximum values ​​of the first height Y1, the second height Y2 and the distance X1 are determined according to the size of the inlet 11, wherein the diameter of the inlet 11 is The value range of the first height Y1 is The value range of the second height Y2 is The range of distance X1 is The selection of the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 directly affects the distribution state of the airflow after passing through the dissipation plate 100.

[0143] After determining the possible range of Y1, Y2, X1 and the first opening ratio η1, the orthogonal experimental method was adopted, and multiple groups of data were selected within the range of the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 for orthogonal experiments. The orthogonal experiment was used to investigate the influence of the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 on the uniformity of the airflow velocity.

[0144] According to the selection of each group of orthogonal test data, the velocity uniform value A can be calculated. The calculation formula of the velocity uniform value A can include:

[0145]

[0146] Where N1 represents the number of measurement points; v i Represents the instantaneous velocity at measuring point i; Represents the average speed of each measuring point. The speed average value A represents the speed uniformity. The smaller the speed average value A, the better the speed uniformity.

[0147] Among all the test data, find the set of data with the smallest velocity uniformity value, and determine the data of the first height Y1, the second height Y2, the distance X1, and the first opening ratio η1 corresponding to the velocity uniformity minimum value A0. The values ​​of Y1, Y2, X1, and η1 corresponding to the velocity uniformity minimum value A0 are the optimal combination of the size and opening ratio of the dissipation plate 100, which can achieve the best uniformity of the airflow velocity distribution.

[0148] The calculation process of the first pressure drop value ΔP1 is specifically described by taking specific data as an example. It can be understood that the specific data listed in this embodiment is only an example to show the specific calculation process in detail, and in some other possible embodiments, other data can also be used.

[0149] Determine the diameter of the inlet 11 of the flow equalizer 10 is 150mm. According to the value range of the first height Y1 The value range of the second height Y2 is The range of distance X1 is It can be determined that 0mm≤Y1≤75mm, 0mm≤Y2≤75mm, and 0mm≤X1≤75mm. In step S104, it can be determined that the first opening ratio η1≥37%. Within the value range of the first height Y1, the second height Y2, the distance X1, and the first opening ratio η1, multiple groups of data can be selected for orthogonal experiments, and the velocity uniform value A can be calculated based on each group of orthogonal experimental data.

[0150] Table 1 Dissipation plate structural parameters

[0151] project X1 Y1 Y2 <![CDATA[η2]]> Parameter range 0-75mm 0-75mm 0-75mm 37％-100％

[0152] Table 2 Dissipation board orthogonal test data table

[0153]

[0154]

[0155] Table 1 is a table of structural parameters of the dissipation plate, and Table 2 is a data table of orthogonal experiments. Based on the above orthogonal experimental results, the design dimension data of the dissipation plate 100 are finally determined, including the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1. The minimum velocity uniformity A0 is 0.0881, and the first height Y1 corresponding to the minimum velocity uniformity A0 of 0.0881 is 40mm, the second height Y2 is 40mm, the distance X1 is 20mm, and the first opening ratio η1 is 55%. The obtained design dimension data of the dissipation plate 100 is applied to the design and manufacture of the dissipation plate 100 to ensure that in practical applications, the dissipation plate can effectively promote the uniform distribution of airflow, achieve the best uniformity of airflow velocity distribution, and improve the performance of semiconductor equipment.

[0156] The size of the dissipation plate 100 and the layout of the first opening 110 are determined by the design method described in the above embodiment. The size of the dissipation plate 100 and the layout of the first opening 110 can determine the first opening rate η1, the first height Y1, the second height Y2, and the distance X1 on the dissipation plate 100 under the premise of ensuring that the pressure drop of the flow equalizing box system meets the requirements, thereby obtaining the optimal design scheme of the dissipation plate 100, ensuring the flow stability and uniformity of the fluid in the flow equalizing box, providing a more stable fluid environment for semiconductor equipment, and being conducive to improving the production efficiency and performance stability of semiconductor equipment.

[0157] The present application also provides a method for designing a semiconductor device current equalizing box, which is used to determine the size data of the current equalizing plate 200 in the current equalizing box 10. Fig.14 As shown, the following steps are included:

[0158] Step S201, determining the number N of second openings on the current equalizing plate 200 and the second opening position of each second opening 210;

[0159] Step S202, determining the single hole flow Q0 corresponding to each second opening according to the inlet flow Q of the flow balancing box and the number N of second openings on the flow balancing plate;

[0160] Step S203, determining the single hole flow rate Vi at each second opening, and determining the single hole area S0 of each second opening according to the single hole flow rate Q0 and the single hole flow rate Vi;

[0161] Step S204, determining the second opening layout of the flow equalizing plate according to the second opening quantity N, the second opening position of each second opening and the single hole area S0.

[0162] The semiconductor equipment flow equalizing box design method provided in the present application can determine the number N of second openings on the flow equalizing plate 200, the position of each second opening 210 and the single hole area S0, so that the design of the second openings 210 on the flow equalizing plate 200 is more reasonable. Even if the flow inlet 11 is not centrally arranged on the wall of the flow equalizing box 10, the uniform distribution and flow control of the fluid in the flow equalizing box 10 can be effectively achieved, so that the fluid can flow out evenly from the flow outlet 12, providing a stable fluid environment for the semiconductor equipment, which is beneficial to improving the operating efficiency and production quality of the semiconductor equipment.

[0163] Below, each step of the design method of the current equalizing box of semiconductor equipment is described in detail.

[0164] In step S201 , the number N of second openings on the current balancing plate 200 and the second opening position of each second opening 210 are determined.

[0165] Specifically, the equalizing plate 200 is provided with a second opening 210, and the number of the second opening 210 is at least one. For example, the number of the second openings 210 is in the range of 10 to 50, and the number of the second openings 210 can be 10, 20 or 50. The number and position of the second openings 210 to be provided on the equalizing plate 200 can be determined according to the working conditions and performance requirements of the equalizing box system, such as the position of the inlet 11, the uniformity of the target airflow, the maximum allowable pressure loss, and the desired wind speed range.

[0166] The number N of second openings on the flow equalizing plate 200 and the second opening position of each second opening 210 are related to the position of the inlet 11. The closer the second opening position of the second opening 210 is to the inlet 11, the greater the number of second openings 210. The number N of second openings may be between 20 and 50. For example, the number N of second openings is 20, or the number N of second openings is 40, or the number N of second openings is 50.

[0167] See also Figure 1 and Fig.10As shown, the inlet 11 is located on the wall of the flow equalizing box 10. In the embodiment of the present application, the position of the inlet 11 is as follows Figure 1 and Fig.10 As shown, the inlet 11 is arranged on the wall surface of the flow equalizing box 10 in the positive Z direction, and the wall surface where the inlet 11 is located is the XY plane. The first side 13 is the side along the X direction, and the second side 14 is the side along the Y direction. The vertical distance A3 between the center of the inlet 11 and the second side 14 of the flow equalizing box 10 is 200 mm, and the vertical distance A4 between the center of the inlet 11 and the first side 13 of the flow equalizing box 10 is 120 mm. The method for determining the number N of second openings and the second opening position of each second opening 210 is as follows: Fig.15 As shown. The number of second openings is selected to be 36, and the 36 second openings 210 are divided into 3 rows arranged at intervals in the Y direction, and the second opening positions in each row are consistent. Each row has 12 second opening positions, and the 12 second opening positions are arranged at intervals along the X direction. According to the position of the inlet 11, along the reverse Y direction, the distance between the first second opening position and the first edge 220 of the equalizing plate 200 close to the first second opening position in the Y direction is 120mm. Along the reverse Y direction, the spacing between two adjacent second opening positions gradually increases, which are 230mm and 255mm, respectively. Along the positive X direction, the distance between the last second opening position and the second edge 230 of the equalizing plate 200 close to the last second opening position in the X direction is 70mm. Along the positive X direction, except for the last second hole position, the distance between two adjacent second hole positions in the remaining second hole positions tends to increase, which are 60mm, 60mm, 65mm, 70mm, 70mm, 75mm, 80mm, 80mm, 85mm, 90mm, and 90mm respectively.

[0168] In step S202 , the single hole flow Q0 corresponding to each second opening 210 is determined according to the inlet flow Q of the flow balancing box 10 and the number N of second openings on the flow balancing plate 200 .

[0169] Specifically, the inlet flow rate Q of the flow balancing box 10 is the total flow rate of the fluid output from other structures of the semiconductor device to the inlet 11 of the flow balancing box 10. For example, the inlet flow rate Q is 500m 3 / h to 1500m 3 / h range, the inlet flow rate Q can be 500m 3 / h, or 1000m 3 / h, can also be 1500m 3 / h. The fluid entering the flow equalizing box 10 from the inlet 11 will pass through the flow equalizing plate 200, which is provided with a second opening 210. The inlet flow Q is evenly distributed to each second opening 210, and passes through the flow equalizing plate 200 from the second opening 210 on the flow equalizing plate 200 to equalize the flow of the fluid entering the flow equalizing box 10 and make the fluid uniform.

[0170] For the inlet flow rate Q, the inlet flow rate Q can be actually measured using a flow meter or other instruments, or calculated based on system design parameters. For the single hole flow rate Q0 corresponding to each second opening 210, it can be calculated based on the determined inlet flow rate Q and the number N of second openings on the flow equalizing plate 200.

[0171] The calculation formula for determining the single hole flow Q0 corresponding to each second opening 210 according to the inlet flow Q of the flow balancing box 10 and the number N of second openings on the flow balancing plate 200 includes: Q0 = Q / N. The single hole flow Q0 corresponding to each second opening 210 can be obtained by dividing the inlet flow Q by the number N of second openings 210.

[0172] In step S203, the single hole flow rate Vi at each second opening 210 is determined, and the single hole area S0 of each second opening 210 is determined according to the single hole flow rate Q0 and the single hole flow rate Vi.

[0173] Specifically, the single hole flow rate Vi refers to the speed of the fluid passing through each second opening 210, and the single hole flow rate Vi affects the flow field distribution and flow characteristics of the flow balancing box 10. The single hole area S0 of each second opening 210 can be determined according to the single hole flow rate Vi and the single hole flow Q0.

[0174] The single hole area S0 of each second opening can be calculated based on the single hole flow rate Q0 calculated in step S202 and the single hole flow rate Vi in this step S203. The calculation formula for determining the single hole area S0 of each second opening 210 based on the single hole flow rate Q0 and the single hole flow rate Vi includes: S = Q0 / Vi. That is, the single hole flow rate Q0 is divided by the single hole flow rate Vi to obtain the single hole area S0 required for each second opening 210.

[0175] Among them, see Fig.16 As shown, the step of determining the single hole flow rate Vi at each second opening 210 includes:

[0176] Step S2031, determine the size of the flow balancing box and the diameter of the flow inlet, and form a three-dimensional model of the flow balancing box.

[0177] Specifically, a three-dimensional model of the flow balancing box 10 can be constructed with the help of three-dimensional modeling software (such as SolidWorks or Catia, etc.), and the three-dimensional model of the flow balancing box 10 can include all key components of the flow balancing box 10, such as the flow balancing plate 200, the flow inlet 11, the flow outlet 12 and the filter 300, etc. The steps of determining the size of the flow balancing box 10 include: Figure 1 and Fig. 9 As shown, the flow equalizing box 10 in this embodiment is a rectangular box, and the dimensions of the flow equalizing box 10 include the length L of the flow equalizing box 10, the width W of the flow equalizing box 10 and the height H of the flow equalizing box 10. A filter 300 is arranged in the flow equalizing box 10, and the filter 300 is located on the side of the flow equalizing plate 200 away from the inlet 11. The filter 300 and the flow equalizing plate 200 are stacked in the Z direction, and the surface of the filter 300 facing the flow equalizing plate 200 is at a distance H0 from the outer wall of the flow equalizing box 10 in the height direction of the flow equalizing box 10, the height of the filter is H1, the height of the flow equalizing box H=H0+H1, it is determined that H0 is greater than or equal to the third height H2, and the height of the flow equalizing box is determined to be H≥H2+H1.

[0178] See also Figure 1 , Fig. 9 and Fig.17 As shown, a filter 300 is arranged in the flow equalizing box 10, the number of the filter 300 is one, the length of the filter 300 is L6, the width of the filter 300 is W1, and the height of the filter 300 is H1. The length L6 of the filter 300 can be in the range of 800mm to 1000mm, for example, the length L6 of the filter 300 can be 800mm, or 900mm, or 1000mm. The width W1 of the filter 300 can be in the range of 600mm to 900mm, for example, the width W1 of the filter 300 can be 600mm, or 700mm, or 900mm. The height H1 of the filter 300 can be in the range of 50mm to 100mm, for example, the height H1 of the filter 300 can be 50mm, or 80mm, or 100mm. The filter 300 is provided with sheet metal structures 400 on both sides in the length direction and on both sides in the width direction. The thickness of the sheet metal structure 400 may be between 1 mm and 5 mm, for example, 1 mm, 2 mm, or 5 mm.

[0179] According to the size of the filter 300 and the size of the sheet metal structure 400, it can be determined that the length L of the flow equalizing box 10 is in the range of 802mm to 1010mm. For example, the length L of the flow equalizing box 10 can be 802mm, 900mm, or 1010mm. The width M of the flow equalizing box 10 is in the range of 602mm to 910mm, and the width W of the flow equalizing box 10 can be 602mm, 800mm, or 910mm. The distance from the surface of the filter 300 facing the flow equalizing plate 200 to the outer wall of the flow equalizing box 10 in the height direction of the flow equalizing box 10 is H0. H0≥H2, H2 can be adaptively designed according to design requirements, for example, H2 is 70mm, so that the height H of the flow equalizing box is ≥120mm. The diameter φ of the inlet 11 is in the range of 100mm to 200mm, and the diameter φ of the inlet 11 can be 100mm, 150mm, or 200mm.

[0180] Step S2032, establishing a CFD simulation model of the flow equalizing box.

[0181] Computational Fluid Dynamics (CFD) software is used to build a CFD simulation model of the flow balancing box 10 according to the three-dimensional geometric model of the flow balancing box 10 and the physical characteristics of the fluid flow. To build the CFD simulation model of the flow balancing box, it is necessary to select the control equation and the turbulence model.

[0182] Constructing the control equation of the CFD simulation model includes constructing the continuity equation of the CFD simulation model. The continuity equation selected in this embodiment is as follows:

[0183]

[0184] Where ρ represents the fluid density, t represents the time, and v i Represents the velocity component of the fluid, and i represents three spatial coordinate directions (usually x, y, and z).

[0185] The control equations for constructing the CFD simulation model include constructing the momentum equation of the CFD simulation model. The momentum equation selected in this embodiment is as follows:

[0186]

[0187] Among them, μ represents the molecular viscosity coefficient; p represents the pressure, ρ represents the fluid density; v j and v i represents the velocity component of the fluid, i and j represent the three spatial coordinate directions (usually x, y, z), i and j can take values ​​of 1, 2 or 3, etc.; μ represents the viscosity coefficient; v′ i and v′ j represents the turbulent velocity component; g iRepresents the acceleration due to gravity.

[0188] The control equation of the CFD simulation model is constructed. Since the Realizable k-ε turbulence model has high simulation accuracy in porous media, this embodiment selects this turbulence model for calculation. The turbulence model formula is as follows:

[0189]

[0190] where ρ represents the fluid density; k represents the turbulent kinetic energy, v j represents the velocity component of the fluid; μ represents the dynamic viscosity of the fluid; μ t represents the viscosity coefficient, σ j represents the empirical constant; G k represents the source of turbulent kinetic energy; ε represents the turbulent energy dissipation rate; Sε represents the term related to the strain rate; C1 and C2 represent empirical constants; v represents the ratio of dynamic viscosity to density.

[0191] Step S2033, the three-dimensional model is divided into finite element meshes and input into the CFD simulation model, and the boundary conditions and model parameters are determined to obtain a simulation velocity cloud diagram at the outlet of the flow balancing box.

[0192] Specifically, the three-dimensional model is meshed by finite element and converted into a mesh structure required for calculation. The fineness and uniformity of the meshing have an important influence on the accuracy of the simulation results, and it is necessary to make reasonable meshing according to the flow field characteristics and geometric shape. The divided finite element mesh is input into the CFD simulation model, and the flow of the fluid in the flow equalizing box 10 is simulated in the CFD software.

[0193] Then, the boundary conditions of different regions in the model are set, including inlet conditions and outlet conditions, and the relevant parameters used in the CFD simulation model in step S2032 are determined. The boundary conditions and model parameters are set according to Table 3.

[0194] The CFD model is numerically simulated using CFD software, including solving the continuity equation, momentum equation, and turbulence model equation, etc. Based on the simulation results, a simulated velocity cloud map can be generated and displayed at the outlet of the flow balancing box. The simulated velocity cloud map can display the flow state of the fluid in the flow balancing box 10, including the flow velocity and distribution, etc., which is helpful for analyzing and optimizing the system design.

[0195] Table 3 Boundary conditions and model parameters

[0196] project Parameter settings Solver Pressure-based implicit solution algorithm SIMPLE algorithm Near wall treatment Standard wall function Inlet Boundary Conditions Speed ​​​​entry Outlet boundary conditions Pressure outlet Wall boundary conditions No-slip adiabatic wall Calculation Convergence Criteria <![CDATA[The residual values are all less than 10 -6 >

[0197] Step S2034, determining the single hole flow velocity Vi at each second opening 210 according to the number N of second openings and the second opening positions on the flow balancing plate 200 in the simulation velocity cloud diagram.

[0198] Specifically, the simulation velocity cloud map has been obtained in step S2033, and at least one second opening 210 is provided on the flow equalizing plate 200, and the number and specific position of the second opening 210 have been determined in step S201. According to the simulation velocity cloud map information, combined with the number and position of the second openings 210 on the flow equalizing plate 200, the single hole flow velocity Vi at each second opening 210 can be analyzed and calculated. Substituting the single hole flow velocity Vi and the single hole flow rate Q0 into the formula S=Q0 / Vi, the single hole area S0 of each second opening 210 can be obtained.

[0199] The calculation process of the first pressure drop value ΔP1 is specifically described by taking specific data as an example. It can be understood that the specific data listed in this embodiment is only an example to show the specific calculation process in detail, and in some other possible embodiments, other data can also be used.

[0200] See also Fig.15 and Fig.18 As shown, in step S201, the number of second openings N is determined to be 36, and the second opening positions of 36 second openings 210 are selected on the flow equalizing plate. In step S202, the inlet flow rate Q is determined to be 1000m 3 / h, then the single hole flow rate Q0 corresponding to each second opening 210 is Q0=1000 / 36=27.8m 3 / h; then determine the single hole area S0 of each second opening 210 according to the formula S0 = Q0 / Vi, where Vi is the speed corresponding to the second opening position of the 36 second openings 210 in the simulation speed cloud map, which is 0.543m / s respectively. Finally, Figure 5 As shown, the single hole area S0 of the second opening 210 on the flow balancing plate 200 is 0.017m 2 .

[0201] In step S204, the layout of the second openings 210 of the flow equalizing plate 200 is determined according to the number N of second openings, the second opening position of each second opening 210, and the single hole area S0.

[0202] Through step S201, the number of second openings N and the second opening position of each second opening 210 can be determined, and through steps S202 and S203, the single hole area S0 can be determined. According to the number of second openings N, the second opening position of each second opening 210 and the single hole area S0, the layout of the second openings 210 of the flow equalizing plate 200 can be obtained. Steps S201 to S204 are the layout design method of the second openings 210 of the flow equalizing plate 200. Through steps S201 to S204, the number, position and area of ​​the second openings 210 on the flow equalizing plate 200 can be adjusted to meet the requirements of uniform airflow distribution, thereby improving the performance and measurement accuracy of semiconductor equipment. Fig.18 FIG. 2 shows an example of a layout design of the second opening 210 of the current equalizing plate 200 obtained according to the above steps.

[0203] In a preferred embodiment, see Figure 1 and Fig. 9 As shown, the flow equalizing box 10 has a flow equalizing chamber 101, and an inlet 11 and an outlet 12 are provided on the flow equalizing box 10. The inlet 11, the flow equalizing chamber 101 and the outlet 12 are connected in sequence. The fluid flows into the flow equalizing chamber 101 from the inlet 11 of the flow equalizing box 10, and then flows out of the flow equalizing chamber 101 from the outlet 12.

[0204] See also Fig.14 As shown, the design method of the current balancing box of a semiconductor device may include the following steps:

[0205] Step S201 , determining the number N of second openings on the current equalizing plate 200 and the second opening position of each second opening 210 .

[0206] The position of the inlet 11 is as follows Fig.10 As shown, the vertical distance A3 between the center of the flow inlet 11 and the second side 14 of the flow balancing box 10 is 200 mm, and the vertical distance A4 between the center of the flow inlet 11 and the first side 13 of the flow balancing box 10 is 120 mm.

[0207] A flow equalizing plate 200 is provided in the flow equalizing box 10. The flow equalizing plate 200 is located in the flow equalizing cavity 101 of the flow equalizing box 10 and is arranged parallel to the wall surface of the flow equalizing box 10 in the positive Z direction. The edge of the flow equalizing plate 200 abuts against the inner wall of the flow equalizing box 10 to separate the flow equalizing cavity 101. 36 second openings 210 are provided on the flow equalizing plate 200, and the second openings 210 penetrate the flow equalizing plate 200 along the thickness direction of the flow equalizing plate 200. The fluid flows into the flow equalizing cavity 101 from the flow inlet 11 of the flow equalizing box 10, and then passes through the second openings 210 on the flow equalizing plate 200 and flows out of the flow equalizing cavity 101 from the flow outlet 12. The second opening position of each second opening 210 refers to Fig.15As shown, the 36 second openings 210 are divided into 3 rows arranged at intervals in the Y direction, and the second opening positions in each row are consistent. Each row has 12 second opening positions, and the 12 second opening positions are arranged at intervals along the X direction. According to the position of the inlet 11, along the reverse Y direction, the distance between the first second opening position and the first edge 220 of the equalizing plate 200 close to the first second opening position in the Y direction is 120mm. Along the reverse Y direction, the spacing between two adjacent second opening positions gradually increases, which are 230mm and 255mm respectively. Along the positive X direction, the distance between the last second opening position and the second edge 230 of the equalizing plate 200 close to the last second opening position in the X direction is 70mm. Along the positive X direction, except for the last second hole position, the distance between two adjacent second hole positions in the remaining second hole positions tends to increase, which are 60mm, 60mm, 65mm, 70mm, 70mm, 75mm, 80mm, 80mm, 85mm, 90mm, and 90mm respectively.

[0208] Step S202, determining the single hole flow Q0 corresponding to each second opening according to the inlet flow Q of the flow balancing box and the number N of second openings on the flow balancing plate.

[0209] The inlet flow rate Q is 1000m 3 / h, in step S201, the number of second openings N is determined to be 36, then the single-hole flow rate Q0 corresponding to each second opening 210 is Q0 = 1000 / 36 = 27.8m 3 / h.

[0210] Step S203, determining the single hole flow rate Vi at each second opening, and determining the single hole area S0 of each second opening according to the single hole flow rate Q0 and the single hole flow rate Vi;

[0211] Among them, see Fig.16 As shown, the step of determining the single hole flow rate Vi at each second opening 210 includes:

[0212] Step S2031, determine the size of the flow balancing box and the diameter of the flow inlet, and form a three-dimensional model of the flow balancing box.

[0213] Specifically, a three-dimensional model of the flow balancing box 10 can be constructed with the help of three-dimensional modeling software (such as SolidWorks or Catia, etc.), and the three-dimensional model of the flow balancing box 10 can include all key components of the flow balancing box 10, such as the flow balancing plate 200, the flow inlet 11, the flow outlet 12 and the filter 300. Figure 1 and Figure 2As shown, the flow equalizing box 10 in this embodiment is a rectangular box, and the dimensions of the flow equalizing box 10 include the length L of the flow equalizing box 10, the width W of the flow equalizing box 10, and the height H of the flow equalizing box 10. A filter 300 is arranged in the flow equalizing box 10, and the filter 300 is located on the side of the flow equalizing plate 200 away from the inlet 11. The filter 300 and the flow equalizing plate 200 are stacked in the Z direction, and the surface of the filter 300 facing the flow equalizing plate 200 is at a distance H0 from the outer wall of the flow equalizing box 10 in the height direction of the flow equalizing box 10, and the height of the filter is H1. The height H of the flow equalizing box is H=H0+H1, and H0 is determined to be greater than or equal to the third height H2, and the height H≥H2+H1 of the flow equalizing box is determined. The number of filters 300 is one, the length L6 of the filter 300 is 950mm, the width W1 of the filter 300 is 750mm, and the height H1 of the filter 300 is 75mm. The filter 300 is provided with sheet metal structures 400 on both sides in the length direction and on both sides in the width direction. The thickness of the sheet metal structure 400 is 1.5 mm.

[0214] According to the size of the filter 300 and the size of the sheet metal structure 400, the length L of the flow equalizer 10 can be determined to be 953 mm, and the width W of the flow equalizer 10 can be determined to be 753 mm. H0 ≥ H2, H2 can be adaptively designed according to design requirements, for example, 70 mm, so that the height H of the flow equalizer is ≥ 145 mm. The inlet diameter φ is 150 mm.

[0215] Step S2032, establishing a CFD simulation model of the flow equalizing box.

[0216] The same as the above-mentioned embodiment, the present application will not elaborate on it here.

[0217] Step S2033, the three-dimensional model is divided into finite element meshes and input into the CFD simulation model, and the boundary conditions and model parameters are determined to obtain a simulation velocity cloud diagram at the outlet of the flow balancing box.

[0218] The same as the above-mentioned embodiment, the present application will not elaborate on it here.

[0219] Step S2034, determining the single hole flow velocity Vi at each second opening 210 according to the number N of second openings and the second opening positions on the flow balancing plate 200 in the simulation velocity cloud diagram.

[0220] See also Fig.15 and Fig.18 As shown, in step S201, the number of second openings N is determined to be 36, and the second opening positions of 36 second openings 210 are selected on the flow equalizing plate. In step S202, the single-hole flow rate Q0 corresponding to each second opening 210 is determined to be 27.8 m 3 / h; then determine the single hole area S0 of each second opening 210 according to the formula S0 = Q0 / Vi, where Vi is the speed corresponding to the second opening position of the 36 second openings 210 in the simulation speed cloud map, which is 0.543m / s respectively. Finally, Fig.18 As shown, the single hole area S0 of the second opening 210 on the flow balancing plate 200 is 0.017m 2 .

[0221] In step S204, the layout of the second openings 210 of the flow equalizing plate 200 is determined according to the number N of second openings, the second opening position of each second opening 210, and the single hole area S0.

[0222] The layout design of the second opening 210 of the current balancing plate 200 is as follows: Fig.18 Through the design method of the layout of the second openings 210 of the flow equalizing plate 200 from step S201 to step S204, the number, position and area of ​​the second openings 210 on the flow equalizing plate 200 can be determined to meet the requirements of uniform airflow distribution, thereby improving the performance and measurement accuracy of semiconductor equipment.

[0223] Continue reading Fig.13 As shown, in the embodiment of the present application, the dissipation plate 100 includes two first guide plates 120 and two second guide plates 130, the two second guide plates 130 are located between the two first guide plates 120, the two second guide plates 130 located between the two first guide plates 120 are connected obliquely, and the two sides of each second guide plate 130 are respectively connected obliquely with a first guide plate 120 and another second guide plate 130, and the two first guide plates 120 and the two second guide plates 130 are connected to form a W-shaped structure. The dissipation plate includes an outer wall vertex 150, and the outer wall vertex 150 is the highest point of the dissipation plate 100 in the positive Z direction, that is, the outer wall vertex 150 is the intersection of the two second guide plates 130. The distance between the outer wall vertex 150 of the dissipation plate 100 and the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100 is a first height Y1. The second height Y2 is the distance between the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100 and the edge of the dissipation plate 100 on the side away from the connecting plate 140. The distance X1 is the distance between the most concave point 1021 and the edge of the first guide plate 120 of the dissipation plate 100 along the first direction, and the first direction is the direction from the edge of the inlet 11 toward the hole of the inlet 11, which is the X direction. Fig.13 The edge of the dissipation plate 100 is shown to be a flat edge. It can be understood that when the edge of the dissipation plate 100 is uneven, the distance between the most concave point 1021 along the thickness direction of the dissipation plate 100 and the edge of the dissipation plate 100 is the average distance between the most concave point 1021 along the thickness direction of the dissipation plate 100 and the edge of the dissipation plate 100.

[0224] See also Fig.12 As shown, the design method for determining the size data of the first opening 110 of the dissipation plate 100 includes the following steps:

[0225] In step S101, the maximum pressure drop value ΔPm of the current balancing box system is determined.

[0226] In this embodiment, the maximum pressure drop value ΔPm of the flow equalizing box system is 200 Pa.

[0227] In step S102, a second opening ratio η2 of the second opening 210 on the flow balancing plate 200 is determined, and a first pressure drop value ΔP1 of the flow balancing plate is determined according to the second opening ratio η2;

[0228] The step of determining the second opening ratio η2 of the second openings 210 on the equalizing plate 200 includes: determining the total area S of the surface of the equalizing plate 200 where the second openings 210 are arranged and the total area S1 of all the second openings 210 on the equalizing plate 200, and the second opening ratio η2 = S1 / S. In step S101, it is determined that the number of the second openings 210 is 36, and the second opening positions of the second openings 210 are as follows: Fig.15 As shown, in step S102, it can be determined that the inlet flow rate Q is 1000m 3 / h, in step S103, it can be determined that the inlet diameter φ is 150 mm, in step S103, it can be determined that the surface area S of the flow balancing plate 200 where the second opening 210 is set is 0.543 m / s, and the total area S1 of all the second openings 210 on the flow balancing plate 200 is 0.017 m 2 , so that the second opening ratio η2 is 47.4%.

[0229] The step of determining the first pressure drop value ΔP1 of the flow balancing plate 200 according to the second opening ratio η2 includes: calculating the first pressure drop value ΔP1 of the flow balancing plate 200 according to the second opening ratio η2, and the calculation formula includes:

[0230]

[0231] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0232] In step S101, the maximum pressure drop value ΔPm of the equalizing box system is 200 Pa. In step S102, the second opening rate η2 of the equalizing plate 200 is 47.4%. Substituting the above specific data into the formula, it can be obtained that the first pressure drop value ΔP1 is 93.2 Pa.

[0233] In step S103, the maximum pressure drop value ΔP2 of the dissipation plate is determined according to the maximum pressure drop value ΔPm of the flow balancing box system and the first pressure drop value ΔP1.

[0234] The step of determining the maximum pressure drop value ΔP2 of the dissipation plate 100 according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1 includes: calculating the maximum pressure drop value ΔP2 of the dissipation plate 100 according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1, and the calculation formula includes: ΔP2 = ΔPm-ΔP1. In step S101, it can be determined that the maximum pressure drop value ΔPm of the flow equalizing box system is 200 Pa, and in step S102, it can be determined that the first pressure drop value ΔP1 is 93.2 Pa. Substituting them into the calculation formula, it can be calculated that the maximum pressure drop value ΔP2 of the dissipation plate 100 is ≤ 106.8 Pa.

[0235] In step S104 , the minimum value of the first opening ratio η1 of the dissipation plate 100 is determined according to the maximum pressure drop value ΔP2 of the dissipation plate 100 .

[0236] The step of determining the minimum value of the first opening ratio η1 of the dissipation plate 100 according to the maximum pressure drop value ΔP2 of the dissipation plate 100 includes: calculating the minimum value of the first opening ratio η1 of the dissipation plate 100 according to the maximum pressure drop value ΔP2, and the calculation formula includes:

[0237]

[0238] Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

[0239] In step S102, it can be determined that the inlet flow rate Q is 1000m 3 / h, in step S103, it can be determined that the inlet diameter φ is 150 mm, and in step S103, it can be determined that the maximum pressure drop value ΔP2≤106.8 Pa of the dissipation plate 100, and the above specific data are brought into the calculation formula to obtain the minimum value of the first opening ratio η1, and the first opening ratio η1≥37%.

[0240] In step S105, the maximum values ​​of the first height Y1, the second height Y2 and the distance X1 are determined according to the size of the inlet 11 of the flow equalizing box 10, the first height Y1 is the distance between the vertex 150 of the outer wall of the dissipation plate 100 and the most concave point 1021 of the transition cavity 102 along the thickness direction of the dissipation plate 100, the second height Y2 is the distance between the most concave point 1021 of the transition cavity 102 and the edge of the dissipation plate 100 along the thickness direction of the dissipation plate 100, the distance X1 is the distance between the most concave point 1021 and the edge of the dissipation plate 100 along the first direction, the first direction is the direction from the edge of the inlet 11 toward the hole of the inlet 11, and multiple groups of data are selected within the range for orthogonal experiments on the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 to calculate the velocity uniformity A of each group of experiments, and the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 data corresponding to the velocity uniformity minimum value A0 are determined to determine the size data of the dissipation plate 100.

[0241] In step S103, the inlet diameter of the flow equalizer 10 can be determined. It is 150mm.

[0242] According to the value range of the first height Y1 The value range of the second height Y2 is The range of distance X1 is It can be determined that 0mm≤Y1≤75mm, 0mm≤Y2≤75mm, and 0mm≤X1≤75mm. In step S104, it can be determined that the first opening ratio η1≥37%.

[0243] After determining the possible range of Y1, Y2, X1 and the first opening ratio η1, the orthogonal experimental method was adopted, and multiple groups of data were selected within the range of the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 for orthogonal experiments. The orthogonal experiment was used to investigate the effects of the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 on the uniformity of the airflow velocity.

[0244] According to the selection of each group of orthogonal test data, the velocity uniform value A can be calculated. The calculation formula of the velocity uniform value A can include:

[0245]

[0246] Where N1 represents the number of measurement points; v i Represents the instantaneous velocity at measuring point i; Represents the average speed of each measuring point. The speed average value A represents the speed uniformity. The smaller the speed average value A, the better the speed uniformity.

[0247] Among all the test data, find the set of data with the smallest velocity uniformity value, and determine the data of the first height Y1, the second height Y2, the distance X1, and the first opening ratio η1 corresponding to the velocity uniformity minimum value A0. The values ​​of Y1, Y2, X1, and η1 corresponding to the velocity uniformity minimum value A0 are the optimal combination of the size and opening ratio of the dissipation plate 100, which can achieve the best uniformity of the airflow velocity distribution.

[0248] Table 4 Dissipation plate structural parameters

[0249] project X1 Y1 Y2 <![CDATA[η2]]> Parameter range 0-75mm 0-75mm 0-75mm 37％-100％

[0250] Table 5 Dissipation board orthogonal test data table

[0251]

[0252]

[0253] Table 4 is a dissipation plate structural parameter table, and Table 5 is a data table of orthogonal test. Based on the above orthogonal test results, the design dimension data of the dissipation plate 100 is finally determined, including the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1. The uniform minimum velocity value A0 is 0.0881, and the uniform minimum velocity value A0 is 0.0881, corresponding to the first height Y1 of 40mm, the second height Y2 of 40mm, the distance X1 of 20mm, and the first opening ratio η1 of 55%.

[0254] Through the above steps, the specific data of the second opening layout design on the current equalizing plate 200, the size data of the dissipation plate 100 and the specific data of the layout design of the first opening 110 on the dissipation plate 100 can be obtained at the same time, and then applied to the design and manufacture of the dissipation plate 100 to ensure that in actual applications, the dissipation plate and the current equalizing plate can effectively promote the uniform distribution of airflow, achieve the optimal uniformity of airflow velocity distribution, and improve the performance of semiconductor equipment.

[0255] The present application also provides a semiconductor device, including an environmental control module and a flow equalizing box 10 of any of the above-mentioned embodiments, wherein the outlet of the environmental control module is connected to the inlet 11 of the flow equalizing box 10, the environmental control module is used to inject fluid into the flow equalizing box 10, and the outlet 12 of the flow equalizing box 10 is used to discharge the fluid injected by the environmental control module. The environmental control module can deliver a temperature-stable fluid to the inlet 11, and after the fluid enters from the inlet 11, it quickly disperses under the action of the dissipation plate 100 and flows in and out from the first opening 110, and then the fluid is dispersed into a more uniform fluid by the second opening 210 on the flow equalizing plate 200, and finally flows out from the outlet 12, thereby improving the uniformity of the flow field after the fluid flows out from the outlet 12, providing a more stable fluid environment for the semiconductor device, and being conducive to improving the production efficiency and performance stability of the semiconductor device.

[0256] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A dissipation plate, characterized in that: The dissipation plate is applied to a flow equalizing box, which is provided with an inlet and an outlet. The dissipation plate is used to be arranged in the flow equalizing cavity of the flow equalizing box, and the projection of the dissipation plate along the thickness direction is used to cover the inlet of the flow equalizing box. The side surface of the dissipation plate along the thickness direction facing the inlet is used to enclose with the inner wall surface of the flow equalizing box to form a transition cavity. At least one first opening is provided on the dissipation plate, and the at least one first opening passes through the dissipation plate along the thickness direction of the dissipation plate to connect the transition cavity and the space in the flow equalizing cavity located on the other side of the dissipation plate away from the inlet.

2. The dissipation plate according to claim 1, characterized in that: The dissipation plate includes a first guide plate and a second guide plate, the first guide plate and the second guide plate are connected obliquely, and the first opening is disposed on the first guide plate and the second guide plate.

3. The dissipation plate according to claim 2, characterized in that: A length of the first guide plate along a thickness direction of the dissipation plate is greater than or equal to a length of the second guide plate.

4. The dissipation plate according to claim 2 or 3, characterized in that: The dissipation plate includes two first guide plates and two second guide plates, the two second guide plates are located between the two first guide plates, and the two sides of each second guide plate are obliquely connected to one first guide plate and another second guide plate respectively, and the two first guide plates and the two second guide plates are connected to form a W-shaped structure.

5. The dissipation plate according to claim 4, characterized in that: Along the arrangement direction of the first guide plate and the second guide plate, the length of the first guide plate is smaller than the length of the second guide plate.

6. A flow equalizing box, characterized in that: The flow equalizing box has a flow equalizing cavity therein, and an inlet and an outlet are arranged on the flow equalizing box, the inlet, the flow equalizing cavity and the outlet are connected in sequence, the flow equalizing box has a flow equalizing plate and a dissipation plate as described in any one of claims 1 to 5, at least one second opening is arranged on the flow equalizing plate, the dissipation plate is located between the inlet and the flow equalizing plate, the dissipation plate is surrounded by a side surface of the side facing the inlet along the thickness direction and the inner wall surface of the flow equalizing box to form a transition cavity, the inlet, the transition cavity, the first opening of the dissipation plate, the second opening of the flow equalizing plate and the outlet are connected in sequence.

7. The flow equalizing box according to claim 6, characterized in that: The flow equalizing box includes a square box body, and the flow equalizing box includes a first side and a second side. The first side and the second side are perpendicular to and connected to each other. The vertical distance between the inlet and the first side is less than half the length of the second side. The length of the dissipation plate is equal to the length of the first side or the second side.

8. A method for designing a current balancing box for semiconductor equipment, characterized in that: The method for determining the size data of the dissipation plate in the current balancing box according to claim 6 or 7 comprises the following steps: Determine the maximum pressure drop value ΔPm of the current equalizing box system; Determine a second opening ratio η2 of the second opening on the flow balancing plate, and determine a first pressure drop value ΔP1 of the flow balancing plate according to the second opening ratio η2; Determine the maximum pressure drop value ΔP2 of the dissipation plate according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1; Determining a minimum value of the first opening ratio η1 of the dissipation plate according to the maximum pressure drop value ΔP2; According to the size of the inlet of the flow equalizing box, the maximum values ​​of the first height Y1, the second height Y2 and the distance X1 are determined, the first height Y1 is the distance between the vertex of the outer wall of the dissipation plate and the most concave point of the transition cavity along the thickness direction of the dissipation plate, the second height Y2 is the distance between the most concave point of the transition cavity and the edge of the dissipation plate along the thickness direction of the dissipation plate, the distance X1 is the distance between the most concave point and the edge of the dissipation plate along the first direction, the first direction is the direction from the edge of the inlet toward the hole of the inlet, and multiple groups of data are selected within the range for orthogonal experiments on the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1, the velocity uniformity A of each group of experiments is calculated, and the first height Y1, the second height Y2, the distance X1 and the first opening ratio η1 data corresponding to the velocity uniformity minimum value A0 are determined to determine the size data of the dissipation plate.

9. The method for designing a current balancing box for semiconductor equipment according to claim 8, characterized in that: The step of determining the first pressure drop value ΔP1 of the current equalizing plate according to the second opening ratio η2 comprises: The first pressure drop value ΔP1 of the current equalizing plate is calculated according to the second opening ratio η2, and the calculation formula includes: Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

10. The semiconductor device current equalizing box design method according to claim 8 or 9, characterized in that: The step of determining the maximum pressure drop value ΔP2 of the dissipation plate according to the maximum pressure drop value ΔPm and the first pressure drop value ΔP1 comprises: The maximum pressure drop value ΔP2 of the dissipation plate is calculated according to the maximum pressure drop value ΔPm of the flow equalizing box system and the first pressure drop value ΔP1, and the calculation formula includes: ΔP2=ΔPm-ΔP1.

11. The method for designing a current balancing box for semiconductor equipment according to any one of claims 8 to 10, characterized in that: The step of determining the minimum value of the first opening ratio η1 of the dissipation plate according to the maximum pressure drop value ΔP2 of the dissipation plate comprises: The minimum value of the first opening ratio η1 of the dissipation plate is calculated according to the maximum pressure drop value ΔP2 of the dissipation plate, and the calculation formula includes: Where ρ = 1.225 kg / m 3 , Q is the inlet flow rate, is the inlet diameter.

12. A method for designing a current equalizing box for semiconductor equipment, used to determine the size data of the current equalizing plate in the current equalizing box as claimed in claim 6 or 7, characterized in that: The steps include: Determine the number N of second openings on the flow equalizing plate and the second opening position of each second opening; Determine the single hole flow Q0 corresponding to each second opening according to the inlet flow Q of the flow balancing box and the number N of second openings on the flow balancing plate; Determine a single hole flow rate Vi at each second opening, and determine a single hole area S0 of each second opening according to the single hole flow rate Q0 and the single hole flow rate Vi; The second opening layout of the flow equalizing plate is determined according to the second opening number N, the second opening position of each second opening and the single hole area S0.

13. The method for designing a current balancing box for semiconductor equipment according to claim 12, characterized in that: The step of determining the single hole flow rate Vi at each second opening comprises: Determine the size of the flow balancing box and the diameter of the flow inlet to form a three-dimensional model of the flow balancing box; Establish a CFD simulation model of the flow equalizing box; The three-dimensional model is divided into finite element meshes and input into the CFD simulation model, and boundary conditions and model parameters are determined to obtain a simulation velocity cloud diagram at the outlet of the flow balancing box; In the simulation velocity cloud diagram, the single hole flow velocity Vi at each second opening is determined according to the number N of second openings on the flow balancing plate and the second opening positions.

14. A semiconductor device, characterized in that: It comprises an environmental control module and a flow balancing box as described in claim 6 or 7, wherein the outlet of the environmental control module is connected to the inlet of the flow balancing box, the environmental control module is used to inject fluid into the flow balancing box, and the outlet of the flow balancing box is used to discharge the fluid injected by the environmental control module.

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