Wafer testing device and wafer testing method

Abstract

The invention relates to the technical field of wafer detection, and particularly provides a wafer testing device and a wafer testing method.The wafer testing device comprises a mounting base, a bearing disc and a plurality of first heat insulation pieces; the bearing disc is arranged above the mounting seat at intervals, the bearing disc comprises a bearing part and a heating part, the bearing part is used for arranging a target wafer, the heating part is connected with the bearing part, and the heating part is used for heating the target wafer so as to test the target wafer; the plurality of first heat insulation parts are arranged between the mounting seat and the bearing disc, and the first heat insulation parts are respectively connected with the mounting seat and the bearing disc, so that the heat conduction area between the mounting seat and the bearing disc is reduced through the first heat insulation parts. According to the wafer testing device and the wafer testing method, the heating efficiency is high, the heating time is short, and efficient heating and detection can be achieved.

Description

Technical Field

[0001] The present invention relates to the field of wafer testing technology, and in particular to a wafer testing device and a wafer testing method. Background Art

[0002] Wafers are one of the basic materials for making semiconductors. To ensure the quality of finished products, wafers need to be tested. During the test, the wafer is placed on a carrier and heated to a certain temperature. The electrical properties of the wafer are tested by corresponding testing instruments, such as probes. In existing wafer testing devices, the heater has the problem of heat loss, which affects the heating efficiency and prolongs the heating time. Summary of the invention

[0003] The wafer testing device and wafer testing method provided by the embodiments of the present invention at least solve the problems of heat loss, low heating efficiency and long heating time of existing wafer heaters, have high heating efficiency and short heating time, and can achieve efficient heating and detection.

[0004] In a first aspect, the present invention provides a wafer testing device, comprising a mounting seat; a carrying plate, the carrying plate being spaced apart above the mounting seat, the carrying plate comprising a carrying member and a heating member, the carrying member being used to set a target wafer, the heating member being connected to the carrying member, the heating member being used to heat the target wafer so as to test the target wafer; and a plurality of first thermal insulation members, the plurality of first thermal insulation members being arranged between the mounting seat and the carrying plate, the first thermal insulation members being respectively connected to the mounting seat and the carrying plate, so as to reduce the heat conduction area between the mounting seat and the carrying plate through the first thermal insulation members.

[0005] In one embodiment of the present invention, at least part of the first thermal insulation members are configured as a thermal insulation group, and a plurality of the thermal insulation groups are configured, and the plurality of thermal insulation groups are sequentially configured along the circumference of the target wafer; wherein each of the thermal insulation groups is configured with three first thermal insulation members, and the three first thermal insulation members are configured in a triangular distribution, and along the radial direction of the target wafer, the number of the first thermal insulation members located in the outer circle is not less than the number of the first thermal insulation members located in the inner circle.

[0006] In one embodiment of the present invention, the first thermal insulation member is configured as a cylindrical structure, a fastener is disposed inside the first thermal insulation member, the fastener includes a connecting portion and an end portion, the connecting portion is connected to the supporting plate, the end portion is disposed on a side of the mounting seat away from the supporting plate, a spring washer is disposed between the end portion and the mounting seat, and two wedge-shaped gaskets are disposed between the spring washer and the mounting seat.

[0007] In one embodiment of the present invention, the mounting base includes a first mounting support, which is used to be connected to a driving device; a plurality of limiting holes are arranged on the first mounting support, and the plurality of limiting holes are arranged in sequence along the circumference of the target wafer, and a second thermal insulation member is arranged in each of the limiting holes; and a second mounting support, the second mounting support is arranged on the second thermal insulation member, and the first thermal insulation member is arranged on the second mounting support.

[0008] In one embodiment of the present invention, a mounting through hole is provided on the first mounting support, and a plurality of leveling holes are provided on the hole wall of the mounting through hole. The plurality of leveling holes are sequentially arranged along the circumference of the target wafer, and a first leveling member is provided in each leveling hole. The first leveling member is configured to be movable relative to the leveling hole and then fixed, and a first leveling portion is provided on the first leveling member; a second leveling member is movably provided in the mounting through hole, and a second leveling portion corresponding to the first leveling portion is provided on the second leveling member, and the second leveling portion abuts against the first leveling portion; wherein the first leveling member moves to drive the second leveling member to move.

[0009] In one embodiment of the present invention, the heating element comprises a pressing component, the pressing component is arranged between the carrier and the first thermal insulation component, and the pressing component connects the carrier and the first thermal insulation component respectively; and a heating component, the heating component is arranged between the pressing component and the carrier, the heating component is configured as a coiled heating wire, and the coiling arrangement density of the heating component gradually decreases along the direction from the periphery of the target wafer toward the center of the target wafer, and the coiling arrangement density of the heating component is consistent with the bearing size H of the carrier. c Related, the load-bearing size H of the load-bearing member c is the dimension of the carrier along the direction of the heating element toward the target wafer.

[0010] In one embodiment of the present invention, it also includes a temperature sensor, which is arranged on the carrier and is used to detect the real-time temperature value of the target wafer; a compensation calculator, which is electrically connected to the temperature sensor and is used to compare a preset temperature value and the real-time temperature value, and output a compensation temperature value when the preset temperature value and the real-time temperature value are not equal; and a controller, which is electrically connected to the compensation calculator and the heating element, respectively, and is used to adjust the heating power of the heating element according to the compensation temperature value so that the real-time temperature value is equal to the preset temperature value.

[0011] In one embodiment of the present invention, the load-bearing dimension H of the load-bearing member is cSatisfy the relationship, 10mm≤H c ≤30mm; wherein the bearing size H of the bearing member c Related to a preset parameter range, the preset parameter range includes an accuracy range of a carrying surface and a temperature uniformity range of the target wafer, the carrying surface being a surface of the carrying member contacting the target wafer.

[0012] In one embodiment of the present invention, a plurality of adsorption grooves are arranged on the carrying surface of the carrier, and the plurality of adsorption grooves are arranged in sequence along the radial direction of the target wafer, and at least some of the adjacent adsorption grooves are connected to each other; at least one adsorption hole is arranged at the bottom of each adsorption groove; an adsorption channel is arranged on the carrier, and the adsorption channel is connected to the adsorption holes respectively, and the adsorption channel is configured to generate negative pressure to adsorb and fix the target wafer;

[0013] In one embodiment of the present invention, a plurality of annular suction groups are arranged on the carrying surface of the carrier, and the plurality of annular suction groups are arranged in sequence along the radial direction of the target wafer, and each of the annular suction groups is provided with a plurality of suction holes, and the plurality of suction holes are arranged in sequence along the circumference of the target wafer; an adsorption channel is arranged on the carrier, and the adsorption channels are respectively connected to the suction holes, and the adsorption channels are configured to generate negative pressure to adsorb and fix the target wafer; wherein the aperture D of the suction hole is k Satisfy the relationship, 0.2mm≤D k ≤0.6mm, the hole spacing L between two adjacent suction holes k Satisfy the relationship, 5mm≤L k ≤8mm.

[0014] In a second aspect, the present invention also provides a wafer testing method, which is applied to a wafer testing device as described in any one of the above, comprising: placing a target wafer on a carrier of a carrier plate; wherein the carrier plate is spaced above a mounting seat, and the carrier plate also includes a heating element, and the heating element is connected to the carrier; a plurality of first thermal insulation elements are arranged between the mounting seat and the carrier plate, and the first thermal insulation elements are respectively connected to the mounting seat and the carrier plate; heating the target wafer by the heating element; wherein the heat conduction area between the mounting seat and the carrier plate is reduced by the first thermal insulation element; and testing the target wafer.

[0015] The above technical solution of the present invention has the following beneficial effects compared with the prior art:

[0016] The wafer testing device described in the present invention effectively reduces the heat conduction area by arranging multiple first thermal insulation parts between the carrier plate and the mounting seat, thereby reducing the heat loss of the heating element, ensuring that as much heat as possible is conducted to the carrier to heat the target wafer, reducing the time required for a single heating of the wafer, and achieving the effect of improving the heating efficiency and detection efficiency.

[0017] In addition, heat insulation can be achieved to prevent other devices on one side of the mounting seat from being affected by high temperature, thereby extending their service life. When heat is reduced, the possibility of thermal expansion and contraction of the components on one side of the mounting seat due to hot and cold changes during wafer inspection is also greatly reduced. Adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the multiple first thermal insulation parts, and the overall stability of the device is improved, ensuring high test accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can be obtained based on these drawings without creative work. In the drawings:

[0019] Figure 1 It is a structural schematic diagram of a wafer testing device in a preferred embodiment of the present invention.

[0020] Figure 2 It is a schematic diagram of the explosion structure of a wafer testing device in a preferred embodiment of the present invention.

[0021] Figure 3 It is a schematic structural diagram of the first thermal insulation component in a preferred embodiment of the present invention.

[0022] Figure 4 It is a schematic cross-sectional structural diagram of the first thermal insulation component in a preferred embodiment of the present invention.

[0023] Figure 5 It is a schematic diagram of the exploded structure of the mounting base in the preferred embodiment of the present invention.

[0024] Figure 6 It is a schematic cross-sectional structural diagram of the mounting base in a preferred embodiment of the present invention.

[0025] Figure 7 It is a schematic diagram of the explosion structure of the carrier plate in the preferred embodiment of the present invention.

[0026] Figure 8 It is a schematic diagram of the structure of the heating component in a preferred embodiment of the present invention.

[0027] Fig. 9 It is a schematic diagram of the dimensions of the heating component in the preferred embodiment of the present invention.

[0028] Fig.10 It is one of the structural schematic diagrams of the bearing member in the preferred embodiment of the present invention.

[0029] Fig.11 It is a schematic cross-sectional structural diagram of a bearing member in a preferred embodiment of the present invention.

[0030] Fig.12 This is the second structural schematic diagram of the bearing member in the preferred embodiment of the present invention.

[0031] Fig.13 It is a schematic diagram of the electrical connection structure of the controller in the preferred embodiment of the present invention.

[0032] Fig.14 It is a flow chart of a wafer testing method in a preferred embodiment of the present invention.

[0033] The above drawings include the following reference numerals:

[0034] 10. Mounting seat; 11. First mounting support; 111. Limiting hole; 112. Second heat insulating member; 113. Mounting through hole; 1131. Leveling hole; 1132. First leveling member; 11321. First leveling part; 1133. Second leveling member; 11331. Second leveling part; 12. Second mounting support; 13. Second insulating shielding member; 131. Third insulating member; 132. Second electromagnetic shielding member; 133. Second grounding member; 20. Carrying plate; 21. Carrying member; 211. Carrying surface; 2111. Adsorption groove; 2112. Adsorption hole; 2113. Annular suction group; 2114. Suction hole; 2115, anti-interference coating; 212, adsorption channel; 22, heating element; 221, heating component; 222, pressing component; 223, second insulating component; 224, first electromagnetic shielding component; 225, first grounding component; 2251, grounding contact portion; 2252, grounding connection portion; 2253, hollowing; 30, thermal insulation group; 31, first thermal insulation element; 32, fastener; 321, connection portion; 3211, insulating layer; 322, end portion; 323, spring pad; 324, wedge-shaped gasket; 41, temperature sensor; 42, precision collector; 50, compensation calculator; 60, controller. DETAILED DESCRIPTION

[0035] Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described herein, which are instead provided for a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are only for exemplary purposes and are not intended to limit the scope of protection of the present invention.

[0036] It should be noted that in semiconductor manufacturing and testing, the wafer needs to be heated to a certain temperature, such as 150°C to 200°C, for electrical performance testing. The corresponding temperature accuracy range is within ±0.5°C, and the deviation of each position dimension on the wafer is within ±0.5°C.

[0037] In the prior art, a wafer heater is disposed between a wafer carrier and a wafer base. During heating, the heater generates heat and heats the wafer carrier according to heat conduction, thereby heating the wafer on the carrier. However, not all of the heat generated by the heater can be used for heating, and a large portion of the heat is not conducted upward, but is conducted downward to the wafer base.

[0038] During the inspection, there are a large number of wafers to be tested. The problem of heat loss prolongs the single heating time and reduces the heating efficiency. With the accumulation of multiple inspections, the overall inspection efficiency is greatly reduced, making it difficult to meet the needs of short-time heating and efficient inspection.

[0039] In addition, other devices in the detection equipment, such as a driving device and a visual detection device, are also arranged below the wafer base. During the test, the wafer base is connected to the driving end of the driving device to cooperate with the detection instrument for detection.

[0040] The temperature of the heater is relatively high during wafer testing. When the heat from the heater is conducted downward, the devices adjacent to the base are easily affected, which not only reduces their service life, but also may cause thermal expansion and contraction due to the difference in temperature between replacing wafers and testing wafers, thereby affecting the flatness of the upper carrier and ultimately affecting the wafer detection accuracy.

[0041] To solve the above problems, refer to Figure 1 and Figure 2 As shown, the present invention provides a wafer testing device, including a mounting seat 10 , a carrier plate 20 and a first thermal insulation member 31 .

[0042] The mounting base 10 is used to carry the corresponding components and to connect the driving device. The mounting base 10 is provided with mounting holes to cooperate with screws, bolts, etc. to connect with the driving end of the driving device, so as to cooperate with the corresponding test instruments, such as probes, etc., to achieve the test of the target wafer.

[0043] The driving device and the testing instrument belong to the prior art, and those skilled in the art can configure them as required, and their structures, working principles, etc. will not be described in detail.

[0044] The carrier plate 20 is spaced apart above the mounting base 10. The carrier plate 20 includes a carrier 21 and a heater 22. The carrier 21 is used to set the target wafer. Preferably, the carrier 21 is configured as a cylindrical structure to match the shape of the target wafer. The heater 22 is connected to the carrier 21, and the heater 22 is used to heat the carrier 21 and heat the target wafer so that the target wafer reaches the temperature required for the test, such as 175°C, and then cooperates with test instruments such as probes to test the target wafer.

[0045] It is conceivable that the heating element 22 and the target wafer are respectively arranged on the two end surfaces of the carrier 21, the heating element 22 and the carrier 21 are arranged in close contact with each other, and the carrier 21 and the target wafer are arranged in close contact with each other, so as to facilitate better heating and detection.

[0046] In the prior art, there are many types of heating instruments, such as resistance heating, infrared heating, etc. Those skilled in the art can set the heating element 22 according to actual needs to achieve heating of the target wafer.

[0047] The first thermal insulation member 31 is the core structure of the present invention, which reduces the heat loss of the heating member 22 by reducing the heat conduction area between the mounting base 10 and the carrier plate 20, ensuring that as much heat as possible is conducted to the carrier 21 to heat the target wafer, thereby reducing the time required for a single heating of the target wafer, and achieving the effect of improving the heating efficiency and the detection efficiency.

[0048] Specifically, a plurality of first thermal insulation members 31 are provided, and the plurality of first thermal insulation members 31 are provided between the mounting seat 10 and the carrying plate 20 , and the first thermal insulation members 31 are connected to the mounting seat 10 and the carrying plate 20 , respectively.

[0049] Compared with the direct surface-to-surface bonding structure in the prior art, since multiple first thermal insulation components 31 are provided, the contact area of ​​the carrier plate 20 connected by multiple first thermal insulation components 31 is reduced. In the case of contact heat conduction, the heat conduction area from the carrier plate 20 to the mounting seat 10 is correspondingly reduced.

[0050] Taking the cylindrical first thermal insulation member 31 as an example, assuming that the cylindrical first thermal insulation member 31 is connected to the carrier plate 20 through its circular end surface, the corresponding heat conduction area is the product of the circular end surface area of ​​the first thermal insulation member 31 and the number of the first thermal insulation members 31. As can be imagined, the heat conduction area value is smaller than the heat conduction area of ​​direct surface contact in the prior art.

[0051] It is conceivable that, in addition to the plurality of first heat insulating members 31, other shapes and quantities of heat insulating members, such as cylindrical, honeycomb briquettes, etc., can be provided to achieve the effect of reducing the heat conduction area. However, compared with providing a plurality of first heat insulating members 31, the processing difficulty, cost, load-bearing capacity, and heat conduction area that can be reduced are relatively disadvantageous.

[0052] According to Fourier's law, when the heat conduction area is reduced, the amount of heat transferred is also reduced. At the same time, the other medium between the first thermal insulation member 31 is usually air. The thermal conductivity of air at normal temperature and pressure is poor, usually much less than that of solid. Therefore, the heat transferred through air can be ignored.

[0053] Those skilled in the art can set the specific structural shape, size, setting position and quantity of the first thermal insulation member 31 according to actual needs.

[0054] Preferably, the first heat insulating member 31 is made of a material that is resistant to high temperatures, insulating and highly rigid, and is illustratively made of ceramic or glass fiber.

[0055] It can be imagined that, since the heat loss from the heating element 22 of the carrier plate 20 to the side of the mounting seat 10 is reduced, firstly, more heat can be guaranteed to heat the target wafer and the time required for a single heating of the target wafer can be reduced, thereby achieving the effect of improving the heating efficiency and the detection efficiency. Secondly, heat insulation can be achieved to prevent other devices on the side of the mounting seat 10 from being affected by high temperature and extend their service life. Finally, with the reduction of heat, the possibility of thermal expansion and contraction of the components on one side of the mounting seat 10 due to hot and cold changes during the wafer detection process is also greatly reduced; in addition, adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the multiple first thermal insulation members 31, and the overall stability of the device is improved, ensuring high test accuracy.

[0056] During the test, the target wafer only needs to be placed on the carrier 21 and heated by the heater 22. The heat of the heater 22 is transferred to the carrier 21, and the target wafer is heated so that the target wafer reaches the temperature required for the test. After the heating is completed, the target wafer can be tested by a corresponding test instrument, such as a probe.

[0057] The wafer testing device described in the present invention effectively reduces the heat conduction area by arranging multiple first thermal insulation members 31 between the carrier plate 20 and the mounting seat 10, thereby reducing the heat loss of the heating member 22, ensuring that as much heat as possible is conducted to the carrier 21 to heat the target wafer, reducing the time required for a single heating of the target wafer, and achieving the effect of improving the heating efficiency and the detection efficiency.

[0058] In addition, the multiple first thermal insulation members 31 can achieve thermal insulation, prevent other devices on one side of the mounting seat 10 from being affected by high temperature, and extend their service life. When the heat is reduced, the possibility of thermal expansion and contraction of the components on one side of the mounting seat 10 due to hot and cold changes during the wafer inspection process is also greatly reduced. Adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the multiple first thermal insulation members 31, and the overall stability of the device is improved, ensuring high test accuracy.

[0059] When the probe is used as a test instrument to test the target wafer, the probe will generate downward pressure. The maximum pressure at a single point can reach 10kg. Under the premise of setting multiple first thermal insulation members 31 to reduce the heat conduction area, how to ensure that the device is balanced under pressure without affecting the thermal insulation effect needs to be considered.

[0060] In order to take into account both good stability and thermal insulation effect, refer to Figure 2 and Figure 3 As shown, in the wafer testing device described in the present invention, in some embodiments, at least part of the first thermal insulation member 31 is configured as a thermal insulation group 30 .

[0061] There are multiple heat insulation groups 30, which are arranged in sequence along the circumference of the target wafer. Each heat insulation group 30 is provided with three first heat insulation members 31, and the three first heat insulation members 31 are arranged in a triangular distribution. Figure 3 In the figure, dotted lines illustrate the triangle formed by the three first heat insulating members 31 in the heat insulating group 30. The triangular heat insulating group 30 has high structural stability and strong bearing capacity.

[0062] Along the radial direction of the target wafer, the number of the first thermal insulation members 31 located in the outer circle is not less than the number of the first thermal insulation members 31 located in the inner circle, so as to adapt to the target wafer and achieve better support.

[0063] Preferably, the triangular structure of the heat insulation group 30 is set as an isosceles triangle or an equilateral triangle. The vertex of each triangle is set on the same circle of the inner circle, and the other two corners of each triangle are set on the same circle of the outer circle. Figure 3 In the figure, two circles, the inner circle and the outer circle, are indicated by dotted lines.

[0064] Furthermore, four heat insulation groups 30 are provided, and the four heat insulation groups 30 are evenly spaced and distributed in sequence along the circumference of the target wafer. Accordingly, eight first heat insulation members 31 are provided on the outer circle, and four first heat insulation members 31 are provided on the inner circle. By setting this structure, the stability of the device can be made higher while ensuring that the heat conduction area is as small as possible, thereby ensuring high test accuracy.

[0065] Reference Figure 4 As shown, in some embodiments of the wafer testing device of the present invention, the first thermal insulation member 31 is configured as a cylindrical structure. The cylindrical first thermal insulation member 31 can minimize the stress change caused by the change of the supporting force, improve the stability of the device, and ensure high test accuracy.

[0066] Furthermore, a fastener 32 is disposed in the cylindrical first heat insulating member 31 to achieve connection and assembly with the mounting seat 10 and the carrier plate 20 .

[0067] The fastener 32 includes a connecting portion 321 and an end portion 322. The connecting portion 321 is connected to the carrier plate 20. For example, the connecting portion 321 is provided with a thread, and the carrier plate 20 is provided with a threaded hole, and the two are threadedly connected. The end portion 322 is provided on the side of the mounting seat 10 away from the carrier plate 20. Preferably, the fastener 32 is provided as a screw.

[0068] Considering the high temperature environment during wafer inspection, the different thermal expansion coefficients between the fastener 32 and the connection will cause changes in the clamping force. In order to solve this problem, a spring washer 323 is provided between the end portion 322 of the fastener 32 and the mounting seat 10, and two wedge-shaped washers 324 are provided between the spring washer 323 and the mounting seat 10. By setting this structure, the spring washer 323 can undergo elastic deformation, thereby increasing the friction force to prevent loosening. At the same time, the two wedge-shaped washers 324 are wedged against each other to prevent loosening, which can effectively reduce the impact of high temperature, ensure the clamping force of the fastener 32, and prevent the fastener 32 from loosening.

[0069] Furthermore, an insulating layer 3211 is provided on at least part of the connecting portion 321. By providing the insulating layer 3211, it is possible to effectively prevent the fastener 32 from interfering with the performance of the heating component 221. Preferably, the insulating layer 3211 is provided at least on the portion of the connecting portion 321 corresponding to the portion in contact with the heating component 221.

[0070] Reference Figure 5 and Figure 6 As shown, in some embodiments of the wafer testing device of the present invention, the mounting seat 10 includes a first mounting support 11 and a second mounting support 12. The first mounting support 11 is used to connect with the driving device. A limiting hole 111 and a mounting hole are provided on the first mounting support 11, and the mounting hole is used to connect with the driving end of the driving device through screws, bolts, etc.

[0071] A plurality of limiting holes 111 are provided on the first mounting support 11 , and the plurality of limiting holes 111 are sequentially arranged along the circumference of the target wafer.

[0072] Those skilled in the art can set the spacing between two adjacent limiting holes 111 according to actual needs. Exemplarily, the limiting holes 111 are evenly spaced. Alternatively, the total number of limiting holes 111 is set to an even number, and two limiting holes 111 are set as a group, and the spacing between two limiting holes 111 in the same group is smaller than the spacing between two adjacent limiting holes 111 in different groups.

[0073] A second heat insulating member 112 is disposed in each limiting hole 111, the second mounting support 12 is disposed on the second heat insulating member 112, and the first heat insulating member 31 is disposed on the second mounting support 12. Further heat insulation is achieved by arranging the second heat insulating member 112 to cooperate with the first heat insulating member 31.

[0074] It is conceivable that although the first thermal insulation member 31 effectively reduces the loss of heat to the side of the mounting base 10, it is difficult to completely eliminate it. Therefore, when the first thermal insulation member 31 is provided, the mounting base 10 is provided as a split structure and a plurality of second thermal insulation members 112 are provided between the two supports, so as to further improve the thermal insulation effect, prevent other devices on one side of the mounting base 10 from being affected by high temperature, and extend their service life. When the heat is reduced, the possibility of thermal expansion and contraction of the components on one side of the mounting base 10 due to hot and cold changes during the wafer inspection process is also greatly reduced. In addition, adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the plurality of second thermal insulation members 112, and the overall stability of the device is improved, ensuring high test accuracy.

[0075] Preferably, the second heat insulating member 112 is made of a material that is resistant to high temperatures, insulating and highly rigid, and is illustratively made of ceramic or glass fiber.

[0076] Preferably, the second thermal insulation member 112 is configured as a block structure so as to focus on structural stability while taking into account the thermal insulation effect.

[0077] Taking into account the requirements of the device for flatness accuracy, in the wafer testing device described in the present invention, in some embodiments, the second mounting support 12 is configured to be movable relative to the first mounting support 11 to adjust the flatness accuracy of the mounting support 10 and reduce the flatness accuracy error, thereby avoiding the flatness accuracy error of the mounting support 10 affecting the flatness accuracy above.

[0078] Specifically, refer to Figure 5 and Figure 6 As shown, a mounting through hole 113 is provided on the first mounting support 11. Preferably, the first mounting support 11 is provided in a ring-shaped or ring-like structure.

[0079] A plurality of leveling holes 1131 are arranged on the hole wall of the mounting through hole 113 , and the plurality of leveling holes 1131 are arranged in sequence along the circumference of the target wafer. Preferably, the extension square of the leveling hole 1131 is perpendicular to the extension direction of the mounting through hole 113 .

[0080] Each leveling hole 1131 is provided with a first leveling member 1132, which is configured to be fixed after being moved relative to the leveling hole 1131, and a first leveling portion 11321 is provided on the first leveling member 1132. Preferably, the first leveling member 1132 is provided as a screw, and a corresponding thread is provided in the leveling hole 1131, and the two are threadedly connected to convert rotation into axial movement. Preferably, the first leveling portion 11321 is provided as an inclined structure.

[0081] A second leveling member 1133 is movably disposed in the mounting through hole 113 . A second leveling portion 11331 corresponding to the first leveling portion 11321 is disposed on the second leveling member 1133 . The second leveling portion 11331 abuts against the first leveling portion 11321 .

[0082] Preferably, the second leveling member 1133 is also configured to be annular, so as to reduce the contact area between the second leveling member 1133 and the second mounting support 12 as much as possible on the basis of achieving flatness precision adjustment.

[0083] The first leveling portion 11321 is configured as a groove-type structure. Preferably, the first leveling portion 11321 is cut on a plane where the axis of the mounting through hole 113 is located, and the cross-section of the cut groove is a triangle, so that the groove surface corresponding to one of the sides of the triangle cooperates with the first leveling portion 11321.

[0084] When the first leveling member 1132 is moved by force, the first leveling portion 11321 cooperates with the second leveling portion 11331 to convert the radial movement of the first leveling member 1132 relative to the mounting through hole 113 into the axial movement of the second leveling member 1133 relative to the mounting through hole 113, thereby driving the second leveling member 1133 to move.

[0085] Since there are multiple first leveling members 1132, by adjusting the corresponding first leveling members 1132, the flatness accuracy of the second mounting support 12 can be adjusted and the flatness accuracy error can be reduced, thereby preventing the flatness accuracy error of the mounting support 10 from affecting the flatness accuracy above.

[0086] During the wafer testing process, factors affecting the test accuracy include not only the flatness accuracy error but also electromagnetic interference. For example, the heating element 22 that is powered on for heating will generate electromagnetic interference, which will affect the test accuracy of the device.

[0087] Reference Figure 2 , Figure 4 and Figure 7As shown, in the wafer testing device described in the present invention, in some embodiments, the heating element 22 includes a heating component 221 and a first insulating shielding element.

[0088] The heating component 221 is powered on. After being powered on, the heating component 221 generates heat and transmits the heat to the carrier 21, thereby finally heating the target wafer. The first insulating shielding member is arranged outside the heating component 221, and the first insulating shielding member is used to shield the first electromagnetic interference, that is, the electromagnetic interference of the heating component 221 to the target wafer. By arranging the first insulating shielding member outside the heating component 221 to shield the first electromagnetic interference, the test accuracy of the device can be effectively improved.

[0089] In some embodiments, the first insulating shield includes a pressing component 222 , a second insulating component 223 , and a first electromagnetic shielding component 224 .

[0090] The second insulating component 223 is disposed between the carrier 21 and the heating component 221, and is connected to the carrier 21 to achieve insulation between the carrier 21 and the heating component 221. Preferably, the second insulating component 223 is configured as an epoxy resin board to reduce leakage value.

[0091] The first electromagnetic shielding component 224 is disposed between the second insulating component 223 and the heating component 221. The first electromagnetic shielding component 224 is grounded to absorb and conduct the electromagnetic interference of the heating component 221 to the ground, thereby preventing the first electromagnetic interference from affecting the test accuracy. Preferably, the first electromagnetic shielding component 224 is configured as a permalloy plate. Permalloy has high magnetic permeability, low coercive force, and good mechanical strength, and can well shield electromagnetic interference.

[0092] The heating component 221 is arranged between the pressing component 222 and the first electromagnetic shielding component 224 and is pressed by the pressing component 222, so that the heating component 221 is in close contact with other components, thereby increasing the heat conduction area and ensuring that the heat is conducted to the carrier 21 as quickly as possible to heat the target wafer.

[0093] Preferably, the material of the pressing component 222 is set to ceramic, so that it can play the role of insulation and heat insulation on the basis of compression, and can effectively cooperate with the first thermal insulation component 31 to improve the heating efficiency.

[0094] Those skilled in the art can set the connection method between the components according to actual needs, such as using screws to make the components contact with each other under pressure, or using high temperature resistant glue to bond them.

[0095] The first heat insulating member 31 is connected to the pressing member 222. Preferably, through holes corresponding to the first heat insulating member 31 are provided on the heating member 221 and the first insulating shielding member, so that the fastener 32 in the first heat insulating member 31 can pass through and achieve a firm connection with the bearing member 21.

[0096] Further, see Figure 2 , Figure 4 and Figure 7 As shown, in the wafer testing device described in the present invention, in some embodiments, the first insulating shielding component further includes a first grounding component 225 .

[0097] The first grounding component 225 includes a connected grounding contact portion 2251 and a grounding connection portion 2252. The grounding contact portion 2251 is arranged between the first electromagnetic shielding component 224 and the second insulating component 223, and the grounding contact portion 2251 is arranged as a square structure. A hollow 2253 is arranged at the center of the grounding contact portion 2251. By setting this structure, on the basis of being able to achieve grounding shielding, the number of grounding points is effectively increased, so that the overall grounding resistance is small, the shielding effect is improved, the device is prevented from being damaged, and the service life of the device is extended. The grounding connection portion 2252 is connected to an external wire, etc., for grounding. Preferably, the first grounding component 225 is arranged as a copper foil.

[0098] Reference Figure 4 , Figure 5 and Figure 6 As shown, in some embodiments of the wafer testing device of the present invention, a second insulating shielding member 13 is provided on the second mounting support 12 of the mounting seat 10. The second insulating shielding member 13 is used to shield the second electromagnetic interference, which is the electromagnetic interference of the driving device to the target wafer. By providing the second insulating shielding member 13 on the second mounting support 12 to shield the second electromagnetic interference, the test accuracy of the device can be effectively improved. The first insulating shielding member and the second insulating shielding member 13 cooperate with each other, and the shielding effect is good.

[0099] The second insulating shielding member 13 is connected to the first insulating member 31. Preferably, through holes corresponding to the first insulating member 31 are provided on the second mounting support 12 and the second insulating shielding member 13, so as to facilitate the passage of the fastener 32 in the first insulating member 31, and the end portion 322 of the fastener 32 is provided on the side of the second mounting support 12 away from the second insulating shielding member 13.

[0100] In some embodiments, the second insulation shield 13 includes a third insulation component 131 and a second electromagnetic shield component 132 .

[0101] The third insulating component 131 is disposed on the second mounting support 12 to achieve an insulating connection with the second mounting support 12. Preferably, the third insulating component 131 is configured to be ceramic, which can effectively play the role of insulation and heat insulation.

[0102] The second electromagnetic shielding component 132 is disposed on the third insulating component 131, and the second electromagnetic shielding component 132 is grounded to absorb and conduct the electromagnetic interference of the drive device to the ground, thereby preventing the second electromagnetic interference from affecting the test accuracy. Preferably, the second electromagnetic shielding component 132 is configured as a permalloy plate, which has high magnetic permeability, low coercive force and good mechanical strength, and can well shield electromagnetic interference.

[0103] Those skilled in the art can set the connection method between the components according to actual needs, such as using screws to make the components contact with each other under pressure, or using high temperature resistant glue to bond them.

[0104] Preferably, the second insulating shielding member 13 further includes a second grounding member 133. The second grounding member 133 is disposed on the second electromagnetic shielding member 132 and is grounded. The second grounding member 133 is configured as a "T"-shaped structure to increase the number of grounding points, reduce grounding resistance, and improve shielding effect.

[0105] Preferably, the second grounding component 133 is configured as copper foil.

[0106] Reference Figure 8 and Fig. 9 As shown, the heating component 221 is configured as a coiled heating wire, and those skilled in the art can set a specific coiled shape according to actual needs, for example, set it to a planar spiral structure, etc.

[0107] When heating, along the radial direction of the target wafer, the part of the material close to the center of the circle dissipates heat slowly, while the part located at the periphery dissipates heat quickly. In order to ensure the temperature uniformity of the carrier 21, it is necessary to adjust the coiling arrangement density of the heating component 221 so that the internal energy density is low and the external energy density is high, thereby keeping the internal and external temperatures consistent.

[0108] Therefore, the coiling density of the heating component 221 is set to gradually decrease along the direction from the periphery of the target wafer to the center of the target wafer. The coiling density of the heating component 221 includes the heating wire width of the heating component 221 and the spacing between adjacent heating wires.

[0109] The sparse inside and dense outside distribution structure can effectively ensure that the internal and external temperatures of the heating component 221 remain consistent during heating, thereby achieving uniform heating and improving heating efficiency.

[0110] Preferably, the material of the heating component 221 includes but is not limited to mica board, polyimide (PI), silica gel and other high temperature resistant insulating materials.

[0111] Preferably, the heating component 221 is arranged into three annular regions along the radial direction of the target wafer, which are respectively recorded as an outer peripheral region, a middle region and a central region.

[0112] The width of the heating wire of the heating component 221 in the peripheral area is set to 4.5 to 5.5 mm, for example, 4.5 mm, 4.6 mm, 4.7 mm, 4.8 mm, 4.9 mm, 5 mm, 5.1 mm, 5.2 mm, 5.3 mm, 5.4 mm, 5.5 mm, etc.; the spacing between adjacent heating wires is set to 2.5 to 3.5 mm, for example, 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm, 3 mm, 3.1 mm, 3.2 mm, 3.3 mm, 3.4 mm, 3.5 mm, etc.

[0113] The width of the heating wire of the heating component 221 in the middle area is set to 3 to 4 mm, for example, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm, 4mm, etc.; the spacing between adjacent heating wires is set to 4 to 5 mm, for example, 4mm, 4.1mm, 4.2mm, 4.3mm, 4.4mm, 4.5mm, 4.6mm, 4.7mm, 4.8mm, 4.9mm, 5mm, etc.

[0114] The width of the heating wire of the heating component 221 in the central area is set to 2 to 3 mm, for example, 2mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3mm, etc.; the spacing between adjacent heating wires is set to 5.5 to 6.5 mm, for example, 5.5mm, 5.6mm, 5.7mm, 5.8mm, 5.9mm, 6mm, 6.1mm, 6.2mm, 6.3mm, 6.4mm, 6.5mm, etc.

[0115] By setting this structure, the heating temperature uniformity of the heating component 221 can be effectively improved, high heating efficiency can be guaranteed, and the actual heating temperature accuracy range can be ensured to be within ±0.5°C, and the deviation of each position dimension on the target wafer can be within ±0.5°C.

[0116] Furthermore, the coiling arrangement density is related to the load-bearing size H of the carrier 21. c Related, the bearing size H of the bearing member 21 cThe width of the heating wire of the heating component 221 and the spacing between adjacent heating wires are determined according to the bearing size H of the carrier 21. c Make adjustments to the load-bearing dimension H of the load-bearing member 21. c The larger the thickness of the carrier 21 is, the smaller the difference in the width and spacing of the heating wires in each area is.

[0117] Reference Fig.11 As shown, in some embodiments of the wafer testing device of the present invention, the bearing size H of the bearing member 21 is c Satisfy the relationship, 10mm≤H c ≤30mm, for example, the bearing size H of the bearing member 21 c Settings include 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, 27mm, 28mm, 29mm, 30mm, etc.

[0118] The bearing dimension H of the bearing member 21 is c Cannot be too small, when the load bearing size H of the bearing member 21 c If it is too small, less than 10 mm, it is difficult to effectively ensure its accuracy and temperature uniformity. c It cannot be too large. When the load-bearing size H of the bearing member 21 is c If it is too large, greater than 30 mm, it will affect the heat conduction effect. c When set to 10 to 30 mm, it can achieve good heat conduction while ensuring good accuracy and temperature uniformity.

[0119] On this basis, the bearing dimension H of the bearing member 21 is c Related to the preset parameter range. The preset parameter range includes the accuracy range of the bearing surface 211 and the temperature uniformity range of the target wafer. The bearing surface 211 is the surface of the bearing member 21 that contacts the target wafer. Among them, the accuracy of the bearing surface 211 is the flatness accuracy. The higher the flatness accuracy requirement, the higher the temperature uniformity requirement, and the bearing size H of the bearing member 21. c Also set the larger.

[0120] In order to ensure that the external interference is small during the wafer electrical performance test, the surface resistivity of the carrier 21 is as small as possible. Fig.11 As shown, in some embodiments, an anti-interference coating 2115 is provided on the carrying surface 211 of the carrier 21, and the anti-interference coating 2115 is used to shield external interference. The carrying surface 211 is the surface of the carrier 21 that contacts the target wafer.

[0121] The surface resistivity of the carrier 21 can be effectively reduced by providing the anti-interference coating 2115. Preferably, the anti-interference coating 2115 is provided as a gold-plated layer or a nickel-plated layer. Among them, the nickel-plated layer is preferred, and the gold-plated layer is generally used in situations where the resistivity requirement is very low.

[0122] Preferably, the carrier 21 is subjected to special heat treatment to ensure that the flatness of the carrier 20 is within 10 microns under high temperature and normal temperature conditions. How to perform heat treatment belongs to the prior art and will not be described in detail.

[0123] Considering the target wafer's requirements for temperature accuracy, in order to ensure that the actual temperature of the target wafer is equal to the preset temperature value, so as to ensure good heating effect and high heating efficiency, refer to Figure 7 and Fig.13 As shown, the wafer testing device described in the present invention, in some embodiments, further includes a temperature sensor 41 , a compensation calculator 50 and a controller 60 .

[0124] The temperature sensor 41 is disposed on the carrier 21 and is used to detect the real-time temperature value of the target wafer. Preferably, the temperature sensor 41 is configured as a thermocouple.

[0125] The compensation calculator 50 is electrically connected to the temperature sensor 41 . The compensation calculator 50 is used to compare the preset temperature value with the real-time temperature value, and output a compensated temperature value when the preset temperature value and the real-time temperature value are not equal.

[0126] The controller 60 is electrically connected to the compensation calculator 50 and the heating component 221 , respectively. The controller 60 is used to adjust the heating power of the heating component 221 according to the compensation temperature value so that the real-time temperature value is equal to the preset temperature value.

[0127] By setting the temperature sensor 41, the compensation calculator 50 and the controller 60, the three cooperate with each other to adjust the heating power of the heating component 221, accurately control the temperature, and ensure that the actual temperature value of the target wafer is equal to the preset temperature value, so as to ensure a good heating effect and high heating efficiency. In addition, it can also achieve the effect of energy saving and improving safety.

[0128] When performing wafer inspection, the target wafer needs to be fixed. By fixing the target wafer, first of all, the test accuracy can be guaranteed, ensuring that the detection instruments, such as probes, can accurately contact the target wafer. Secondly, it also ensures the stability and consistency of the detection, avoiding the target wafer from being affected by interference such as displacement and vibration, and preventing the target wafer from being damaged by collision and scratching. Finally, it reduces the time wasted in adjusting the position of the target wafer and improves the detection efficiency.

[0129] Preferably, the wafer testing device described in the present invention fixes the target wafer by negative pressure adsorption.

[0130] Specifically, refer to Fig.10 and Fig.11 As shown, in some embodiments of the wafer testing device described in the present invention, a plurality of adsorption grooves 2111 are provided on the carrying surface 211 of the carrier 21, and the plurality of adsorption grooves 2111 are arranged in sequence along the radial direction of the target wafer, and at least one adsorption hole 2112 is provided at the bottom of each adsorption groove 2111.

[0131] The carrier 21 is provided with adsorption channels 212 , which are respectively connected to the adsorption holes 2112 . The adsorption channels 212 are configured to generate negative pressure to adsorb and fix the target wafer.

[0132] Exemplarily, the adsorption channel 212 is connected to the negative pressure device through a negative pressure connector, so that negative pressure is generated in the adsorption channel 212. Since the adsorption groove 2111 is connected to the adsorption channel 212 through the adsorption hole 2112, when the adsorption channel 212 generates negative pressure, a relatively closed space is formed between the adsorption groove 2111 and the target wafer on the carrying surface 211 to adsorb and fix the target wafer. After the detection is completed, the negative pressure device stops, and the target wafer can be separated from the carrier 21.

[0133] Preferably, the multiple adsorption grooves 2111 are all configured to be arc-shaped or ring-shaped and are concentrically arranged to achieve adsorption of the target wafer.

[0134] Preferably, at least some of the adjacent adsorption grooves 2111 are connected. Exemplarily, a connecting groove is provided on the carrying surface 211 , and the extending direction of the connecting groove is parallel to the radial direction of the target wafer, so as to realize the connection between the adjacent adsorption grooves 2111 .

[0135] By providing a connecting groove to connect adjacent adsorption grooves 2111, it is possible to effectively prevent the problem that the corresponding adsorption grooves 2111 cannot achieve negative pressure adsorption after the adsorption holes 2112 in some adsorption grooves 2111 are blocked, thereby effectively ensuring the reliability of adsorption fixation.

[0136] Reference Fig.12 As shown, in some embodiments of the wafer testing device of the present invention, a plurality of annular suction groups 2113 are provided on the bearing surface 211 of the bearing member 21, and the plurality of annular suction groups 2113 are sequentially arranged along the radial direction of the target wafer. In the accompanying drawings, the annular suction groups 2113 are indicated by dotted lines. Each annular suction group 2113 is provided with a plurality of suction holes 2114, and the plurality of suction holes 2114 are sequentially arranged along the circumference of the target wafer.

[0137] The carrier 21 is provided with adsorption channels 212 , which are respectively connected to the suction holes 2114 . The adsorption channels 212 are configured to generate negative pressure to adsorb and fix the target wafer.

[0138] Exemplarily, the adsorption channel 212 is connected to the negative pressure device through a negative pressure connector, so that negative pressure is generated in the adsorption channel 212. At this time, a relatively closed space is formed between the suction hole 2114 connected to the adsorption channel 212 and the target wafer on the carrying surface 211 to adsorb and fix the target wafer. After the detection is completed, the negative pressure device stops, and the target wafer can be separated from the carrier 21.

[0139] Preferably, the diameter D of the air intake hole 2114 is k The diameter is set to 0.2 to 0.6 mm. For example, the diameter is set to 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, etc.

[0140] Among them, when facing a thinner target wafer, especially a target wafer below 200 microns, a small-aperture suction hole 2114 is preferably used for adsorption.

[0141] The aperture of the air intake hole 2114 cannot be too small. When the aperture of the air intake hole 2114 is too small, less than 0.2 mm, the processing difficulty of the air intake hole 2114 increases, which is not only difficult to process and increases the production cost, but also affects the adsorption and fixing effect.

[0142] The aperture of the air intake hole 2114 cannot be too large. When the aperture of the air intake hole 2114 is too large, greater than 0.6 mm, when facing a thinner target wafer, especially a target wafer below 200 microns, it will affect the flatness of the target wafer.

[0143] When the aperture of the suction hole 2114 is set to 0.2 to 0.6 mm, it can have a good adsorption and fixing effect and is not likely to affect the target wafer.

[0144] Preferably, the hole spacing L between two adjacent air intake holes 2114 is k The hole spacing between two adjacent air intake holes 2114 is calculated based on the center points of the two air intake holes 2114. For example, the hole spacing between two adjacent air intake holes 2114 is set to 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, etc.

[0145] The hole spacing between two adjacent suction holes 2114 cannot be too small. When the hole diameter and the area of ​​the bearing surface 211 are consistent, the smaller the hole spacing, the more suction holes 2114 need to be set. When there are too many suction holes 2114, it is difficult to ensure the flatness of the wafer.

[0146] The hole spacing between two adjacent suction holes 2114 cannot be too large. When the hole diameter and the area of ​​the bearing surface 211 are consistent, the larger the hole spacing, the fewer suction holes 2114 need to be set. When the number of suction holes 2114 is small, it is difficult to ensure the adsorption and fixing effect.

[0147] When the hole spacing is set to 5 to 8 mm, both wafer flatness and adsorption fixation effects can be well taken into account.

[0148] The present invention also provides a wafer testing device, including a testing instrument, a driving device, and a wafer testing device as described in any one of the above embodiments.

[0149] The driving end of the driving device is connected to the first mounting support 11. When in use, the driving device realizes corresponding driving to cooperate with the test instrument to realize wafer detection. Those skilled in the art can set the corresponding driving device according to actual needs, such as a three-axis driver.

[0150] Since the wafer testing equipment described in the present invention includes the wafer testing device described in the above embodiment, the wafer testing equipment also has all the beneficial effects thereof, which will not be described in detail.

[0151] Reference Fig.13 As shown, the wafer testing equipment described in the present invention, in some embodiments, further includes a precision collector 42.

[0152] The precision collector 42 is used to detect the real-time motion error value of the target wafer. The compensation calculator 50 is electrically connected to the precision collector 42, and the compensation calculator 50 is used to calculate the corresponding motion compensation value according to the real-time motion error value. The controller 60 is electrically connected to the compensation calculator 50 and the driving device, respectively, and the controller 60 is used to adjust the driving parameters of the driving device according to the motion compensation value so that the real-time motion error value is not greater than the preset error value. How to adjust the driving parameters of the driving device belongs to the prior art and will not be repeated.

[0153] During wafer inspection, the flatness of the target wafer must be guaranteed to be within 10 microns. Due to thermal expansion and contraction, the deformation of the carrier 21 is different under different temperature conditions. Therefore, it is necessary to compensate the flatness of the carrier 21 in real time under different temperature conditions.

[0154] By setting up the precision collector 42, it can cooperate with the compensation calculator 50 and the controller 60 to adjust the driving device to ensure that the flatness of the target wafer is within the required range under any temperature conditions, so as to improve the detection accuracy.

[0155] Reference Fig.14As shown, an embodiment of the present invention further provides a wafer testing method, which is applied to a wafer testing device as described in any of the above embodiments. The wafer testing method includes:

[0156] First, a target wafer is placed on the carrier 21 of the carrier plate 20 .

[0157] Among them, the carrier plate 20 is arranged above the mounting seat 10 at intervals. Preferably, the carrier 21 is set to a circular structure to match the shape of the target wafer. The mounting seat 10 is used to carry the corresponding components and play a role in connecting the driving device. Mounting holes are provided on the mounting seat 10 to cooperate with screws, bolts, etc. to achieve connection with the driving end of the driving device, so as to cooperate with corresponding test instruments, such as probes, etc., to achieve testing of the target wafer. The driving device and the test instrument belong to the prior art, and those skilled in the art can set them as needed, and their structure, working principle, etc. will not be repeated.

[0158] The carrier plate 20 also includes a heating element 22, which is connected to the carrier 21. The heating element 22 is used to heat the carrier 21 and heat the target wafer so that the target wafer reaches the temperature required for testing, such as 175°C, and then cooperates with testing instruments such as probes to test the target wafer.

[0159] A plurality of first heat insulating members 31 are disposed between the mounting seat 10 and the carrying plate 20 , and the first heat insulating members 31 are connected to the mounting seat 10 and the carrying plate 20 , respectively.

[0160] Next, the target wafer is heated by the heating element 22 .

[0161] The heat conduction area between the mounting seat 10 and the carrier plate 20 is reduced by the first heat insulating member 31. Since a plurality of first heat insulating members 31 are provided, the contact area of ​​the carrier plate 20 connected by the plurality of first heat insulating members 31 is reduced, and in the case of contact heat conduction, the heat conduction area from the carrier plate 20 to the mounting seat 10 is correspondingly reduced.

[0162] Taking the cylindrical first thermal insulation member 31 as an example, assuming that the cylindrical first thermal insulation member 31 is connected to the carrier plate 20 through its circular end surface, the corresponding heat conduction area is the product of the circular end surface area of ​​the first thermal insulation member 31 and the number of the first thermal insulation members 31. As can be imagined, the heat conduction area value is smaller than the heat conduction area of ​​direct surface contact in the prior art.

[0163] According to Fourier's law, when the heat conduction area is reduced, the amount of heat transferred is also reduced. At the same time, the other medium between the first thermal insulation member 31 is usually air. The thermal conductivity of air at normal temperature and pressure is poor, usually much less than that of solid. Therefore, the heat transferred through air can be ignored.

[0164] Those skilled in the art can set the specific structural shape, size, setting position and quantity of the first thermal insulation member 31 according to actual needs.

[0165] Preferably, the first heat insulating member 31 is made of a material that is resistant to high temperatures, insulating and highly rigid, and is illustratively made of ceramic or glass fiber.

[0166] It can be imagined that, since the heat loss from the heating element 22 of the carrier plate 20 to the side of the mounting seat 10 is reduced, firstly, more heat can be guaranteed to heat the target wafer and the time required for a single heating of the target wafer can be reduced, thereby achieving the effect of improving the heating efficiency and the detection efficiency. Secondly, heat insulation can be achieved to prevent other devices on the side of the mounting seat 10 from being affected by high temperature and extend their service life. Finally, with the reduction of heat, the possibility of thermal expansion and contraction of the components on one side of the mounting seat 10 due to hot and cold changes during the wafer detection process is also greatly reduced; in addition, adverse effects such as vibration and deformation caused by factors such as drive device driving and processing errors are also effectively reduced due to the small contact area of ​​the multiple first thermal insulation members 31, and the overall stability of the device is improved, ensuring high test accuracy.

[0167] Finally, after the target wafer reaches the temperature required for detection, the target wafer can be tested.

[0168] Working principle:

[0169] Before starting the test, check and adjust the corresponding components, such as the second thermal insulation component 112, the leveling component, etc.

[0170] After the adjustment is completed, the target wafer is placed on the carrier 21 , and the negative pressure device is started to generate negative pressure in the adsorption channel 212 and the corresponding holes to adsorb and fix the target wafer.

[0171] Next, the heating component 221 is started, so that the heating component 221 generates heat and transmits the heat to the carrier 21 , thereby finally heating the target wafer.

[0172] During the heating process, the temperature sensor 41, the compensation calculator 50 and the controller 60 cooperate with each other to adjust the heating power of the heating component 221, accurately control the temperature, and ensure that the actual temperature value of the target wafer is equal to the preset temperature value to ensure a good heating effect and high heating efficiency. The precision collector 42, the compensation calculator 50 and the controller 60 cooperate with each other to ensure the flatness of the target wafer to improve the detection accuracy.

[0173] At the same time, the first heat insulating member 31, the second heat insulating member 112 and other components cooperate to reduce the heat loss of the heating component 221 to the driving device side, thereby achieving heat insulation, preventing other devices from being affected by high temperature, and improving heating efficiency.

[0174] After heating to the temperature, the target wafer is tested accordingly by the test instrument. During the test, the first insulating shielding member and the second insulating shielding member 13 cooperate to shield electromagnetic interference and improve the test accuracy. In addition, the first thermal insulation member 31, the second thermal insulation member 112 and other components cooperate to reduce adverse effects such as vibration and deformation, improve the stability of the device, and ensure high test accuracy.

[0175] It should be noted that the term "including" and its variations used in the embodiments of the present invention are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". The modifications of "one" and "multiple" mentioned in the embodiments of the present invention are illustrative and not restrictive. Those skilled in the art should understand that unless the context clearly indicates otherwise, it should be understood as "one or more".

[0176] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in the embodiments of the present invention are all information and data authorized by the user or fully authorized by all parties, and corresponding operation entrances are provided for the user to choose to authorize or refuse.

[0177] The various steps described in the method implementation methods provided by the embodiments of the present invention may be performed in different orders and / or in parallel. In addition, the method implementation methods may include additional steps and / or omit the steps shown. The scope of protection of the present invention is not limited in this respect.

[0178] The term "embodiment" in this specification refers to specific features, structures or characteristics described in conjunction with the embodiment that can be included in at least one embodiment of the present invention. The appearance of this phrase in various places in the specification does not necessarily mean the same embodiment, nor does it mean that it is mutually exclusive with other embodiments and is independent or optional. The various embodiments in this specification are described in a related manner, and the same or similar parts between the various embodiments refer to each other. In particular, for the device, equipment, and system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts refer to the partial description of the method embodiment.

[0179] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of protection. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the attached claims.

Claims

1. A wafer testing device, characterized in that: include: Mounting seat; A carrier plate, the carrier plate is spaced apart and arranged above the mounting seat, the carrier plate comprises a carrier and a heating element, the carrier is used to place a target wafer, the heating element is connected to the carrier, and the heating element is used to heat the target wafer to test the target wafer; as well as, A plurality of first thermal insulation members are arranged between the mounting seat and the carrying plate, and the first thermal insulation members are respectively connected to the mounting seat and the carrying plate to reduce the heat conduction area between the mounting seat and the carrying plate through the first thermal insulation members.

2. The wafer testing device according to claim 1, characterized in that: At least part of the first thermal insulation members are configured as a thermal insulation group, and a plurality of the thermal insulation groups are configured. The plurality of thermal insulation groups are sequentially configured along the circumference of the target wafer; wherein each of the thermal insulation groups is configured with three first thermal insulation members, and the three first thermal insulation members are configured in a triangular distribution, and along the radial direction of the target wafer, the number of the first thermal insulation members located in the outer circle is not less than the number of the first thermal insulation members located in the inner circle.

3. The wafer testing device according to claim 1, characterized in that: The first thermal insulation member is configured as a cylindrical structure, a fastener is disposed inside the first thermal insulation member, the fastener includes a connecting portion and an end portion, the connecting portion is connected to the supporting plate, the end portion is disposed on a side of the mounting seat away from the supporting plate, a spring washer is disposed between the end portion and the mounting seat, and two wedge-shaped gaskets are disposed between the spring washer and the mounting seat.

4. The wafer testing device according to claim 1, characterized in that: The mounting base comprises: a first mounting support, the first mounting support being used to be connected to the driving device; a plurality of limiting holes are arranged on the first mounting support, and the plurality of limiting holes are arranged in sequence along the circumference of the target wafer, and a second heat insulating member is arranged in each of the limiting holes; and A second mounting support, wherein the second mounting support is arranged on the second thermal insulation member, and the first thermal insulation member is arranged on the second mounting support.

5. The wafer testing device according to claim 4, characterized in that: The first mounting support is provided with a mounting through hole, and a plurality of leveling holes are provided on the hole wall of the mounting through hole. The plurality of leveling holes are sequentially arranged along the circumference of the target wafer, and a first leveling member is arranged in each of the leveling holes. The first leveling member is configured to be movable relative to the leveling hole and then fixed, and a first leveling portion is provided on the first leveling member; A second leveling member is movably disposed in the mounting through hole, and a second leveling portion corresponding to the first leveling portion is disposed on the second leveling member, and the second leveling portion abuts against the first leveling portion; wherein the first leveling member moves to drive the second leveling member to move.

6. The wafer testing device according to claim 1, characterized in that: The heating element comprises: a pressing component, the pressing component being disposed between the bearing component and the first thermal insulation component, the pressing component connecting the bearing component and the first thermal insulation component respectively; and A heating component is disposed between the pressing component and the carrier, and the heating component is configured as a coiled heating wire. The coiling arrangement density of the heating component gradually decreases along the periphery of the target wafer toward the center of the target wafer, and the coiling arrangement density of the heating component is proportional to the bearing size H of the carrier. c Related, the load-bearing size H of the load-bearing member c is the dimension of the carrier along the direction of the heating element toward the target wafer.

7. The wafer testing device according to claim 1 or 6, characterized in that: Also includes: A temperature sensor, the temperature sensor being disposed on the carrier and being used to detect a real-time temperature value of the target wafer; a compensation calculator, the compensation calculator being electrically connected to the temperature sensor, the compensation calculator being used to compare a preset temperature value with the real-time temperature value, and output a compensation temperature value when the preset temperature value and the real-time temperature value are not equal; as well as, A controller is electrically connected to the compensation calculator and the heating element, and is used to adjust the heating power of the heating element according to the compensation temperature value so that the real-time temperature value is equal to the preset temperature value.

8. The wafer testing device according to claim 1 or 6, characterized in that: The load-bearing dimension H of the load-bearing member c Satisfy the relationship, 10mm≤H c ≤30mm; wherein the bearing size H of the bearing member c Related to a preset parameter range, the preset parameter range includes an accuracy range of a carrying surface and a temperature uniformity range of the target wafer, the carrying surface being a surface of the carrying member contacting the target wafer.

9. The wafer testing device according to claim 1, characterized in that: A plurality of adsorption grooves are arranged on the carrying surface of the carrier, and the plurality of adsorption grooves are arranged in sequence along the radial direction of the target wafer, and at least some of the adjacent adsorption grooves are connected to each other; at least one adsorption hole is arranged at the bottom of each adsorption groove; an adsorption channel is arranged on the carrier, and the adsorption channel is connected to the adsorption holes respectively, and the adsorption channel is configured to generate negative pressure to adsorb and fix the target wafer; or, A plurality of annular suction groups are arranged on the bearing surface of the carrier, and the plurality of annular suction groups are arranged in sequence along the radial direction of the target wafer, and each of the annular suction groups is provided with a plurality of suction holes, and the plurality of suction holes are arranged in sequence along the circumference of the target wafer; an adsorption channel is arranged on the carrier, and the adsorption channels are connected to the suction holes respectively, and the adsorption channel is configured to generate negative pressure to adsorb and fix the target wafer; wherein the aperture D of the suction hole is k Satisfy the relationship, 0.2mm≤D k ≤0.6mm, the hole spacing L between two adjacent suction holes k Satisfy the relationship, 5mm≤L k ≤8mm.

10. A wafer testing method, applied to the wafer testing device according to any one of claims 1 to 9, characterized in that: include: The target wafer is arranged on a carrier of a carrier plate; wherein the carrier plate is arranged above the mounting seat, and the carrier plate further comprises a heating element, and the heating element is connected to the carrier; a plurality of first heat insulating elements are arranged between the mounting seat and the carrier plate, and the first heat insulating elements are respectively connected to the mounting seat and the carrier plate; The target wafer is heated by the heating element; wherein the heat conduction area between the mounting seat and the carrier plate is reduced by the first thermal insulation element; The target wafer is tested.

Images