MEMS mode wafer and MEMS probe card detection method and device, and storage medium

Abstract

The invention relates to an MEMS mode wafer, an MEMS probe card detection method, an MEMS probe card detection device and a storage medium. The detection method is applied to MEMS wafer detection equipment, and comprises the following steps: loading test configuration parameters of an MEMS probe card to be detected; fixing the MEMS probe card to be tested on a probe seat of test equipment; placing an MEMS mode wafer matched with the to-be-tested MEMS probe card at a preset target position on a test platform of test equipment; the MEMS mode wafer comprises a test point array which is the same as a to-be-tested MEMS wafer corresponding to the to-be-tested MEMS probe card; starting a visual alignment system, and aligning the MEMS probe card to be tested with the MEMS mode wafer; the MEMS probe card to be tested is calibrated; and executing the test task of the MEMS wafer to be tested, and detecting the MEMS probe card to be tested. The test task is automatically executed by using the MEMS mode wafer, and the efficient test of the MEMS probe card is realized.

Description

Technical Field

[0001] The present application relates to the field of semiconductor testing technology, and in particular to a method, device, and storage medium for detecting a MEMS mode wafer and a MEMS probe card. Background Art

[0002] In the modern semiconductor industry, MEMS (micro-electromechanical systems) technology has become crucial. MEMS products are widely used in various fields due to their tiny size and high-precision functions. In order to ensure the reliability of MEMS devices in practical applications, the testing of MEMS wafers during the production process is crucial. As a key tool for such testing, the accuracy and stability of MEMS probe cards directly affect the test results, which in turn are related to the quality and performance of MEMS devices. Therefore, testing MEMS probe cards has become an important link.

[0003] In related technologies, workers are generally required to use different equipment to test different performances of probes separately, and only one probe can be tested at a time. The number of probes in a MEMS probe card is often large. Using conventional testing methods, it may take about a month to complete the test of a probe card. This will lead to a long test cycle and low test efficiency, which will in turn affect the production efficiency of MEMS devices. Summary of the invention

[0004] The present application provides a method, device, and storage medium for detecting a MEMS pattern wafer and a MEMS probe card. Relying on existing MEMS wafer detection equipment, using a MEMS pattern wafer that is consistent with the test points of the MEMS wafer to be tested, the test task of the MEMS wafer to be tested is automatically executed, and the test process of the MEMS wafer to be tested is simulated. During this test process, the test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices.

[0005] In a first aspect, the present application provides a MEMS probe card detection method, which is applied to a MEMS wafer detection device, and the method comprises: Loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location; Fixing the MEMS probe card to be tested on a probe holder of a testing device; Placing a MEMS mode wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS mode wafer includes a test point array identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, wherein the test points include standard pads, standard contact points, and a standard resistor network; Starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; Calibrate the MEMS probe card to be tested; Generate MEMS wafer test tasks according to test type, probe card type, wafer type, and test point location; Execute the MEMS wafer test task to be tested, and detect the MEMS probe card to be tested.

[0006] Optionally, the MEMS model wafer includes a plurality of crystal grains, each crystal grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged identically, and each row of contacts is arranged identically to the contact arrangement of corresponding positions of the same model of the MEMS wafer to be tested; one row of contacts is a test point for calibration; The calibrating the MEMS probe card to be tested includes: The calibration test points are used as contact points, and the MEMS probe card to be tested is calibrated through calibration tasks; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration.

[0007] Optionally, the MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

[0008] Optionally, the MEMS mode wafer further includes marking points, and starting the visual alignment system to align the MEMS probe card to be tested with the MEMS mode wafer includes: Starting the visual alignment system, scanning the MEMS pattern wafer, and identifying the position of the marking point; Based on the position of the marking point, coarsely adjusting the position of the MEMS probe card to be tested; A contact test is performed, and the position of the MEMS probe card to be tested is finely adjusted according to the test result to align it with the MEMS model wafer.

[0009] Optionally, calibrating the MEMS probe card to be tested includes: Based on the pressure sensor data, pressure adjustment is performed so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard; Collecting a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard; Outputting electrical signals of corresponding parameters through the MEMS probe card to be tested, and performing probe adjustment based on signal data of test points on the MEMS mode wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard; Based on the test task of the MEMS probe card to be tested, a mobile test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

[0010] In the second aspect, the present application provides a MEMS mode wafer for performing MEMS probe card detection in cooperation with the method described in any one of the first aspects; the MEMS mode wafer includes: a test point array that is the same as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network.

[0011] Optionally, the MEMS model wafer includes a plurality of crystal grains, each crystal grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged identically, and each row of contacts is arranged identically to the contact arrangement of corresponding positions of the same model of the MEMS wafer to be tested; one row of contacts is a test point for calibration; or, The MEMS model wafer includes several grains, each grain includes multiple contact arrays, each contact array includes multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is respectively the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

[0012] In a third aspect, the present application provides a MEMS probe card detection device, comprising: A parameter loading module, used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location; A probe card fixing module, used for fixing the MEMS probe card to be tested on a probe seat of a testing device; A pattern wafer placement module is used to place a MEMS pattern wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes a test point array identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network; An alignment module, used for starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; A calibration module, used for calibrating the MEMS probe card to be tested; The test module is used to generate a test task for the MEMS wafer to be tested according to the test type, probe card type, wafer type, and test point location; execute the test task for the MEMS wafer to be tested, and detect the MEMS probe card to be tested.

[0013] In a fourth aspect, the present application provides a MEMS probe card detection device, comprising: a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and execute the method of the first aspect.

[0014] In a fifth aspect, the present application provides a computer-readable storage medium storing a computer program that can be loaded by a processor and execute the method of the first aspect.

[0015] In a sixth aspect, the present application provides a computer program product, comprising: a computer program; when the computer program is executed by a processor, it implements the method described in any one of the first aspects.

[0016] The present application provides a method, device, and storage medium for detecting a MEMS mode wafer and a MEMS probe card. The MEMS probe card detection method is applied to a MEMS wafer detection device, and the method includes: loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include the test type, probe card type, wafer type, and test point position; fixing the MEMS probe card to be tested on the probe seat of the test device; placing the MEMS mode wafer matching the MEMS probe card to be tested at a preset target position on the test platform of the test device; the MEMS mode wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and standard resistor networks; starting the visual alignment system to align the MEMS probe card to be tested with the MEMS mode wafer; calibrating the MEMS probe card to be tested; generating a test task for the MEMS wafer to be tested according to the test type, probe card type, wafer type, and test point position; executing the MEMS wafer test task to be tested and detecting the MEMS probe card to be tested. Relying on the existing MEMS wafer inspection equipment, using MEMS model wafers that are consistent with the test points of the MEMS wafer to be tested, the test tasks of the MEMS wafer to be tested are automatically executed, and the test process of the MEMS wafer to be tested is simulated. During this test process, comprehensive test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0018] Figure 1 A flowchart of a MEMS probe card detection method provided in one embodiment of the present application; Figure 2 A schematic diagram of the arrangement of a contact array provided in one embodiment of the present application; Figure 3 A schematic diagram of another arrangement of a contact array provided in an embodiment of the present application; Figure 4 A schematic structural diagram of a MEMS probe card detection device provided in one embodiment of the present application; Figure 5 A schematic diagram of the structure of an electronic device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0020] In addition, the term "and / or" in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article, unless otherwise specified, generally means that the associated objects before and after are in an "or" relationship.

[0021] The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.

[0022] In the modern semiconductor industry, MEMS (micro-electromechanical systems) technology has become crucial. MEMS products are widely used in various fields due to their tiny size and high-precision functions. In order to ensure the reliability of MEMS devices in practical applications, the testing of MEMS wafers during the production process is crucial. As a key tool for such testing, the accuracy and stability of MEMS probe cards directly affect the test results, which in turn are related to the quality and performance of MEMS devices. Therefore, testing MEMS probe cards has become an important link.

[0023] In related technologies, workers are generally required to use different equipment to test different performances of probes separately, and only one probe can be tested at a time. The number of probes in a MEMS probe card is often large. Using conventional testing methods, it may take about a month to complete the test of a probe card. This will lead to a long test cycle and low test efficiency, which will in turn affect the production efficiency of MEMS devices.

[0024] Based on this, the present application provides a method, device, and storage medium for detecting a MEMS pattern wafer and a MEMS probe card. Relying on the MEMS wafer detection equipment, using a MEMS pattern wafer that is consistent with the test points of the MEMS wafer to be tested, the test task of the MEMS wafer to be tested is automatically executed, and the test process of the MEMS wafer to be tested is simulated. During this test process, the test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices. The specific implementation method can refer to the following embodiments.

[0025] Figure 1 This is a flow chart of a MEMS probe card detection method provided in one embodiment of the present application. The method of this embodiment can be applied to MEMS wafer detection equipment. Figure 1 As shown, the method includes the following steps.

[0026] S101, loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location.

[0027] In actual application scenarios, different types of MEMS wafers have different functions, different internal circuit structures, and different test points (test points). MEMS probe cards with different probe structures may be required for testing. The specific structures of different types of MEMS probe cards may also be different. Therefore, a MEMS probe card may only be able to test one type of MEMS wafer, or a MEMS probe card may be able to test multiple types of MEMS wafers. In this application, the MEMS probe card to be tested is a probe card tested using this solution, and the MEMS wafer to be tested is a wafer to be tested using this MEMS probe card to be tested. A MEMS model wafer is a wafer that has the same test point array as the MEMS wafer to be tested and is used for probe card testing.

[0028] The above test types are the types of tests that need to be performed in this test. In the test of the probe card, mechanical test and electrical test are generally included. Mechanical test includes the detection of structural defects of the probe card, such as short circuit, open circuit, poor contact, etc. Electrical test includes the detection of electrical characteristics of the probe card, such as signal transmission stability and integrity, etc.

[0029] The probe card type includes the category, model, probe distribution structure, etc. of the probe card.

[0030] The wafer type includes the category and model of the MEMS wafer to be tested.

[0031] The test point position represents the position of the test point in the MEMS wafer to be tested corresponding to the MEMS probe card to be tested.

[0032] S102, fixing the MEMS probe card to be tested on a probe holder of a testing device.

[0033] The MEMS wafer inspection equipment is equipped with a probe holder that can fix the MEMS probe card and an automation system that can control the installation of the probe card. By controlling an electric actuator (such as a pneumatic system or an electric thruster), the probe card can be fixed in place to accurately install the probe card on the test platform.

[0034] S103 , placing a MEMS pattern wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device.

[0035] The MEMS model wafer includes a test point array that is the same as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, standard resistor networks, and the like.

[0036] MEMS wafer inspection equipment has a structure that can load MEMS wafers and a structure that can achieve precise positioning. For example, the MEMS pattern wafer is loaded onto the test platform through an automated robotic arm or conveyor belt system, and the wafer is accurately placed according to the preset target position in conjunction with an automated visual alignment system to ensure its accurate positioning.

[0037] In some specific embodiments, the automated visual alignment system uses cameras and image processing technology to identify alignment mark points on the wafer (such as test points, pad marks, etc.), determine the position and angle of the wafer, and analyze the positioning deviation between these alignment mark points and the preset target position. According to the deviation, the wafer position is adjusted through precise mechanical adjustment devices (such as XY-axis and Z-axis motion platforms) until it is adjusted to the preset target position.

[0038] S104 , starting the visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer.

[0039] In some specific embodiments, the MEMS mode wafer also includes marking points, and the alignment process includes: starting the visual alignment system, scanning the MEMS mode wafer, and identifying the position of the marking points; based on the position of the marking points, coarsely adjusting the position of the MEMS probe card to be tested; performing a contact test, and finely adjusting the position of the MEMS probe card to be tested according to the test results to align it with the MEMS mode wafer.

[0040] Start the visual alignment system, scan the surface of the MEMS pattern wafer, identify the position of the marking point or contact point, and roughly adjust the position of the MEMS probe card to be tested so that the contact point of the MEMS probe card to be tested is roughly aligned with the test point on the pattern wafer, thereby achieving preliminary alignment of the MEMS pattern wafer and the MEMS probe card to be tested.

[0041] Specifically, the automated vision system will scan the position of the probe and identify the test points on the preset pattern wafer. By adjusting the XY and Z axes of the probe card, the position of the probe card will be automatically adjusted so that each probe contacts the test point on the wafer.

[0042] After the vision system completes the rough adjustment, the position of the probe card is further controlled by fine adjustment. The fine adjustment process can be achieved through software control, which can finely adjust the contact point of each probe. For example, a contact test is performed to check whether each probe is properly contacted with the test point of the pattern wafer. During this process, it may be necessary to further adjust the position and angle of the probe to ensure that there is no poor contact between each probe and the contact point.

[0043] Specifically, the automated vision system will scan the position of the probes to ensure that each probe can be accurately aligned with the test point of the wafer. If the vision system detects a deviation between the probe and the test point, it will make further adjustments by controlling the fine-tuning device of the probe card.

[0044] S105 , calibrating the MEMS probe card to be tested.

[0045] Alignment means that the probe and the test point are aligned in the vertical direction, that is, the probe contact can correspond to the test point with the largest area. The calibration of this step is to adjust the contact degree of the probe card. It mainly includes pressure calibration, depth calibration, electrical calibration, dynamic calibration and other aspects.

[0046] Specifically, the pressure calibration includes adjusting the pressure based on the pressure sensor data so that the pressure of each probe in the MEMS probe card to be tested meets the preset standard.

[0047] The MEMS wafer inspection equipment is equipped with a probe pressure sensor that can detect the probe pressure. The probe is moved to gradually contact the model wafer, and the pressure data fed back by the probe pressure sensor is collected synchronously until the preset standard is reached. This standard has corresponding range requirements in the field of wafer inspection and can be set according to the actual test scenario. This calibration method can ensure that the appropriate pressure is applied when the probe contacts the model wafer, ensuring a good test foundation and avoiding the impact of improper pressure on the test results.

[0048] Specifically, the depth calibration includes collecting a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard.

[0049] The MEMS wafer inspection equipment is equipped with an image acquisition device and a light source generating device that can detect the probe depth. The light source can be a white light source or a yellow light source. When performing depth calibration, turn on the image acquisition device and the light source generating device. Under the illumination of the light source, light and shadow will be formed at the contact position between the probe and the test point. The image acquisition device collects the image here and organizes it into a grayscale image to determine the contact depth of the probe. In some specific implementation methods, grayscale images at different depths can be collected as training sample data to train a deep learning model. The collected grayscale images can be input into the trained deep learning model for contact depth recognition.

[0050] Specifically, the MEMS probe card to be tested outputs an electrical signal of corresponding parameters, and probe adjustment is performed based on signal data of a test point on the MEMS model wafer that contacts the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard.

[0051] MEMS wafer inspection equipment is equipped with test equipment such as signal generators and oscilloscopes that can test the electrical performance of probes. The standard test points on the model wafer are electrically tested through test equipment such as signal generators and oscilloscopes, and the signal characteristics of each test point (including electrical parameters such as voltage, current, and impedance) are automatically recorded. The signal transmission quality between the probe card and the model wafer is checked, and the probe card is adjusted as necessary based on the measured data.

[0052] For example, when performing a voltage test, different voltages are sent out by a signal generator and applied to the test points of the pattern wafer through a probe card. The voltage of the probe and the voltage of the test point are detected to determine whether the output is normal. An oscilloscope or other test equipment can be used to check whether the signal is distorted or interfered.

[0053] In this test scenario, the structure and test point array of the MEMS wafer to be tested are known, and the MEMS model wafer is the same, with known geometry and electrical characteristics. Therefore, it is predictable what signal effect will be presented at the test point when a signal with certain parameters is applied. Comparing the signal prediction value with the actual detection value can determine whether the electrical performance meets the expected standard, and make necessary adjustments to the probe card if it does not meet the standard.

[0054] Specifically, based on the test task of the MEMS probe card to be tested, a mobile test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

[0055] During dynamic testing, the automated system simulates the probe card's interaction with the wafer during testing, testing the probe's stability in different positions and states. Through these dynamic adjustments, the system ensures that the probe always maintains good contact throughout the test process. This ensures that the probe card can work stably under different test conditions. This step includes testing the probe's response speed, signal stability, probe life, etc.

[0056] S106 , executing the MEMS wafer test task to be tested, and testing the MEMS probe card to be tested.

[0057] In some implementations, the prepared MEMS wafer test tasks to be tested can be loaded into the device system by loading the test configuration parameters and executed one by one.

[0058] In other implementations, the device may generate a MEMS wafer test task according to the test type, probe card type, wafer type, and test point location. The test task includes a test point test sequence, a probe card moving path, and the like.

[0059] After all calibration and alignment are completed, the automation system begins to perform the actual MEMS chip testing process. During the test, the probe card will perform a series of electrical tests through the automated control system, such as signal transmission, impedance matching, power testing, etc. During the test, the automation system collects electrical signals from the test points in real time, and the data will be transmitted to the control computer for analysis to check whether the signal at each test point meets the preset standards.

[0060] In this embodiment, relying on the existing MEMS wafer inspection equipment, a MEMS model wafer that is consistent with the test points of the MEMS wafer to be tested is used to automatically execute the test tasks of the MEMS wafer to be tested, and simulate the test process of the MEMS wafer to be tested. During this test process, comprehensive test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices.

[0061] The step numbers identified above are only an execution order of this embodiment. In other embodiments, the execution order of some steps can be adjusted without affecting the execution effect of the method. For example, S102 and S103 can be executed simultaneously or one after another. In addition to the above core steps, in order to ensure the accuracy of the detection and improve the value of the test data, the following steps can also be executed.

[0062] Before starting the test, the automation system performs a hardware check, including the probe card, positioning device, visual alignment system, probe pressure control system, etc. Ensure that all equipment is in normal working condition and detect any faults or deviations. The system performs a self-check procedure to ensure that all sensors, actuators, electrical connections and automation software are functioning properly.

[0063] In some embodiments, when all tests are completed, the automated system sends a test completion signal, the probe card is automatically retracted, and the wafer is removed. The automated system automatically cleans the test platform and prepares for the next round of testing. This includes cleaning the probe card, detecting the status of the equipment, and clearing possible residual data. The automated system also monitors the health of the equipment, including whether the probe card, robotic arm, sensor, etc. need maintenance or replacement of parts. The system can automatically issue maintenance reminders based on real-time monitoring data.

[0064] It is also possible to collect data and generate test reports during the inspection process. Specifically, the report contains detailed test results, electrical parameters, contact conditions, performance data of the probe card, etc. for each test point. The report can be used for quality control and failure analysis. The completed test report and related data can be archived by the automation system and backed up in the set format. Historical data can be queried and analyzed at any time for quality tracking.

[0065] The control process of the automation system in MEMS probe card testing covers multiple links from pattern wafer loading, probe card installation, position calibration, electrical performance verification to final test data collection and report generation. Through highly integrated control systems and automation hardware, the accuracy, efficiency and reliability of testing can be greatly improved, while reducing interference from human operations and ensuring the consistency and repeatability of the test process.

[0066] In order to support the implementation of the above-mentioned testing scheme, the present application also provides a MEMS model wafer. Most fundamentally, this MEMS model wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, so as to ensure that the complete simulation of the various test items involved in the wafer inspection of the MEMS probe card to be tested can be completed to ensure the test effect.

[0067] In terms of the contact arrangement structure details, a MEMS model wafer includes several grains, each of which contains multiple contact arrays, each of which contains multiple rows of contacts with the same arrangement, and each row of contacts is the same as the contact arrangement of the corresponding positions of the same model of the MEMS wafer to be tested; one of the rows of contacts is the calibration test points. When calibrating the MEMS probe card to be tested, the calibration test points can be used as contact points, and the MEMS probe card to be tested can be calibrated through calibration tasks; calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration. The layout of one of the contact arrays is referenced Figure 2 .

[0068] Another type of MEMS model wafer includes a plurality of grains, each of which contains a plurality of contact arrays, each of which contains a plurality of rows of contacts, at least one row of contacts is arranged differently from the other rows, and each row of contacts is respectively arranged the same as the contact arrangement of corresponding positions of at least two different types of MEMS wafers to be tested. When executing the test task of the MEMS wafer to be tested and inspecting the MEMS probe card to be tested, the corresponding test task can be executed one by one for each type of MEMS wafer to be tested, and the corresponding MEMS probe card to be tested can be inspected; after the inspection is completed, the MEMS probe card to be tested corresponding to the MEMS wafer to be tested of another type is replaced for inspection until the test target is achieved. The arrangement of one of the contact arrays is referenced as follows: Figure 3 .

[0069] In addition to the conventional tests, the probes can also be tested for wear.

[0070] Correspondingly, some wear-resistant test points can be designed on the model wafer for long-term testing to evaluate the wear of the probe. These test points have known friction characteristics and durability. Specifically, the friction characteristics and durability can be increased in terms of structural design, material selection and processing technology.

[0071] In terms of structural design, a thicker metal layer can be set, the contact surface can be strengthened, and a wear-resistant cushion layer can be used to improve wear resistance.

[0072] In order to improve the wear resistance, the thickness of the metal layer of the wear resistance test point is relatively larger. The thicker metal layer can play a better role in wear resistance during the contact process, can provide stronger wear resistance, and reduce the damage caused by friction between the probe and the wafer surface.

[0073] Increasing the contact area of ​​the contact point or using a specific geometric shape (such as round, square, etc.) can reduce local pressure and reduce wear. Increasing the contact area helps to disperse the pressure of the probe, thereby reducing single-point wear.

[0074] Add a wear-resistant pad to the test point surface to reduce direct friction. These pads may be metal, ceramic or other hard materials, which can significantly improve durability.

[0075] In terms of material selection, you can choose hard metal materials and special coatings to improve wear resistance.

[0076] For test points that require wear resistance, metal materials with higher hardness can be selected, such as gold (Au), platinum (Pt), tungsten (W), etc. These materials have high wear resistance and chemical stability, and can maintain stable performance during long-term use.

[0077] Alternatively, some special coatings (such as diamond coating (DLC), titanium nitride (TiN) and other hard coatings) can be applied on the surface of the test point. These coatings can not only improve the wear resistance, but also reduce oxidation or corrosion, thereby extending the service life of the test point.

[0078] In terms of processing technology, different surface treatment processes and material treatment processes can be used to improve wear resistance.

[0079] The test points are treated with advanced processes such as laser etching and electroplating to improve their wear resistance. These treatments can form a smoother and more uniform structure on the test point surface, reducing friction and wear.

[0080] The test point material is subjected to heat treatment, such as annealing or quenching. These processes can change the material's lattice structure, enhance its hardness, and thus improve wear resistance.

[0081] Physical vapor deposition (PVD) or chemical vapor deposition (CVD) technology is used to deposit a wear-resistant film on the surface of the test point. This film can not only enhance wear resistance, but also improve corrosion resistance and stability.

[0082] The difference between wear-resistant test points and other parts is mainly achieved through differences in structural design (such as metal layer thickness, contact surface shape, pad design, etc.), material selection (such as hard metal, coating material, etc.) and treatment processes (such as surface treatment, heat treatment, thin film deposition, etc.). These differences enable wear-resistant test points to better withstand the wear caused by repeated contact between the probe and the wafer surface, extend the service life of the test points, and maintain high-precision test performance.

[0083] In a specific embodiment, the MEMS probe card detection method of the present application includes the following steps.

[0084] 1. Probe Card Calibration Standardized test points: A standardized array of test points with known geometry and electrical characteristics is etched on the Pattern Wafer. These test points can include metal pads, contact pads, and resistor networks.

[0085] Probe alignment: Use an image processing system to capture images of the test points on the Pattern Wafer to ensure that the probes on the probe card can be accurately aligned with these standardized test points.

[0086] Calibration process: The alignment accuracy and electrical performance of the probe card are evaluated by applying known voltages or currents to the test points and measuring the probe response. These measurements are used to adjust the probe card's probe positions and calibrate the probe response characteristics.

[0087] In MEMS (micro-electromechanical system) probe card testing, the application of pattern wafers is mainly to provide standardized contact points, which are used to calibrate the positioning accuracy, electrical performance and contact quality of the probe card. By using pattern wafers, it can be ensured that the probe card accurately contacts the electrical test points of the chip to be tested during the test process. The following is a detailed probe alignment and calibration process.

[0088] 1. Preparation Pattern wafer design: A pattern wafer is a specially designed wafer with test contact points. The test contact points can be standardized pads, contact pads, or other design features that will be used in the calibration process.

[0089] Test platform preparation: Before calibration, make sure the test platform, probe card, pattern wafer, and other test equipment (such as oscilloscope, signal generator, etc.) are prepared and in normal working condition.

[0090] 2. Install the probe card Fix the probe card: Fix the probe card on the probe holder of the test equipment to ensure that the connection is firm and in a stable working state.

[0091] 3. Pattern wafer positioning Pattern wafer placement: Place the pattern wafer on the test platform. Ensure accurate positioning of the pattern wafer through precise mechanical operations, which can be achieved by pneumatic devices or precision robotic arms.

[0092] 4. Initial alignment Marking and alignment: There are marking points on the pattern wafer, which are used as references to help the vision system identify the position of the wafer and determine its precise position on the test platform. Through these marking points, the position of the pattern wafer and the probe card can be aligned.

[0093] Calibration system start: Start the vision alignment or optical alignment system to ensure that the pattern wafer can be aligned with the help of the vision system.

[0094] Visual alignment: Start the visual alignment system, scan the surface of the pattern wafer, identify the location of the mark points or contact points, and perform preliminary alignment between the pattern wafer and the probe card. Modern probe card test platforms are usually equipped with an automated visual alignment system that can quickly find the contact points on the pattern wafer.

[0095] Probe card coarse adjustment: Based on the results of visual alignment, make rough probe card position adjustments so that the contact points of the probe card are roughly aligned with the test points on the pattern wafer.

[0096] 5. Accurately position the probe Probe fine-tuning: After the vision system completes the rough adjustment, the position of the probe card is further controlled by fine-tuning. The fine-tuning process can be achieved through software control, which can finely adjust the contact point of each probe.

[0097] Contact test: Perform a contact test to check whether each probe is in proper contact with the test point of the pattern wafer. During this process, it may be necessary to further adjust the position and angle of the probe to ensure that there is no poor contact between each probe and the contact point.

[0098] 6. Probe card pressure calibration Pressure adjustment: By adjusting the pressure applied to the probe, ensure that the probe is not too loose or over-contacts the pattern wafer surface. Too low pressure may cause poor contact, while too high pressure may damage the probe or wafer.

[0099] Pressure sensor calibration: Use pressure sensors to monitor the applied pressure of the probes to ensure that the pressure of all probes is uniform and in compliance with the standard.

[0100] 7. Depth and distance calibration Probe Depth Calibration: Calibrates the contact depth between the probe and the pattern wafer surface to ensure that the probe is not too deep and damages the surface, nor too shallow to form a stable electrical contact.

[0101] Precise docking: Ensure that each probe is aligned with and contacts the contact point of the pattern wafer to ensure reliable signal transmission.

[0102] 8. Electrical performance calibration Signal transmission check: After completing the mechanical alignment, check the signal transmission quality of each probe to ensure that the signal can be stably transmitted between the probe and the pattern wafer. At this time, an oscilloscope or other test equipment can be used to check whether the signal is distorted or interfered.

[0103] Impedance matching: Make sure the impedance of the probe matches the impedance of the test circuit to avoid signal distortion. Impedance mismatch may cause signal reflection, which will affect the accuracy of the test results.

[0104] Electrical calibration: Calibrate the electrical performance of the probe card, including the adjustment of parameters such as voltage and current, to ensure that the signal in the test environment can be accurately transmitted to the test point through the probe card.

[0105] 9. Dynamic calibration and performance verification Dynamic testing: Use a probe card to perform dynamic testing on the wafer to simulate the probe movement in actual testing. In this way, the stability and consistency of the probe card are checked to ensure that the probe card does not shift position during the entire test process.

[0106] Signal integrity testing: During the dynamic calibration process, tools such as an oscilloscope are used to verify the integrity of the signal to ensure that the probe card contacts are stable and do not introduce noise or interference.

[0107] 10. Generate calibration report Record calibration data: After completing the calibration, record all calibration data, including probe position, pressure, electrical parameters, etc. These data will be used as a reference for subsequent tests.

[0108] Calibration report generation: Generate reports based on the data during the calibration process, detailing all calibration parameters and test results. These reports can be used for future quality control to ensure the accuracy and consistency of each test.

[0109] 11. Verification and final confirmation Retest: After calibration is completed, retest is performed to confirm that the probe card can work stably in actual testing and can accurately contact all test points on the pattern wafer.

[0110] Final confirmation: After multiple calibrations and verifications, it is confirmed that the probe card has been fully calibrated and can be used for formal MEMS chip testing.

[0111] Summarize Through the application of pattern wafers, the calibration of the probe card can ensure the precise contact between the probe and the chip in the subsequent MEMS test. The calibration process involves multiple aspects such as probe position, pressure, and electrical performance. Through precise mechanical adjustment and electrical calibration, the accuracy and reliability of the test can be ensured. These steps include preliminary alignment, precise positioning, pressure calibration, depth calibration, electrical calibration, dynamic calibration, etc. The final calibration report provides a detailed basis for subsequent tests.

[0112] 2. Test point layout verification Design Verification: The design of the Pattern Wafer includes a test point layout that matches the actual MEMS device. The arrangement of these test points reflects the test requirements in the actual product.

[0113] Contact test: Perform a probe contact test on the pattern wafer to verify whether the probe can reliably contact each test point in the design. Use a scanning electron microscope (SEM) or other high-precision imaging tools to check the contact quality.

[0114] Layout optimization: Based on the contact test results, adjust the layout of the test points or the design of the probe card to ensure reliable testing in the actual product.

[0115] 3. Improve test efficiency Pre-test use: Use Pattern Wafer to pre-test the probe card before the actual product. This allows for rapid evaluation of the probe card's performance by performing high-throughput testing on the pattern wafer.

[0116] Automated testing: Combined with automated testing equipment to test Pattern Wafer, reduce human errors and increase testing speed. The automated system can quickly change test points and perform data collection and analysis.

[0117] In the MEMS probe card test, the automated control system process of the pattern wafer is to ensure that the probe card can accurately contact the test points of the wafer and provide accurate test results. The main task of the automated control system is to perform precise alignment, calibration and testing processes to improve the efficiency and accuracy of the test. The automated system control process is described in detail below.

[0118] 1. System initialization Loading system settings: Before starting the test, the automation system first loads the preset test configuration, including information such as the test type, the required probe card type, the test point location, the wafer type, etc. These settings can be provided by the operator or the automation software.

[0119] Hardware inspection: The automated system will perform hardware inspections, including probe cards, positioning devices, visual alignment systems, probe pressure control systems, etc. Ensure that all equipment is in normal working condition and detect any faults or deviations.

[0120] System Self-Test: The system performs a self-test procedure to ensure that all sensors, actuators, electrical connections, and automation software are functioning properly.

[0121] 2. Loading and positioning of pattern wafer Automatic wafer loading: In an automated system, the pattern wafer can be loaded onto the test platform by an automated robotic arm or conveyor system. The system precisely places the wafer according to the preset target position to ensure its accurate positioning.

[0122] Visual alignment: After the pattern wafer is placed on the test platform, the automated visual alignment system uses cameras and image processing technology to identify alignment mark points on the wafer (such as test points, pad marks, etc.). This step will help determine the position and angle of the wafer. The automated system can adjust the wafer position through precise mechanical adjustment devices (such as XY axis and Z axis motion platforms) to ensure that it is aligned with the probe card.

[0123] Wafer position correction: If the vision system detects a positioning deviation of the pattern wafer, the automation system corrects the wafer position as needed and reconfirms that the alignment is accurate.

[0124] 3. Automatic installation and calibration of probe cards Automated probe card installation: The automated system controls the probe card installation process and accurately installs the probe card on the probe card test platform. At this point, the system controls the electric actuators (such as pneumatic systems or electric thrusters) to fix the probe card in place.

[0125] Initial probe position adjustment: The system automatically adjusts the position of the probe card according to the test points on the wafer in the preset pattern, so that each probe contacts the test point on the wafer. The initial adjustment can be completed by adjusting the XY and Z axes of the probe card.

[0126] Vision alignment probe: The automated vision system scans the position of the probe to ensure that each probe can be accurately aligned with the test point of the wafer. The vision system detects the deviation between the probe and the test point and makes further adjustments by controlling the fine-tuning device of the probe card.

[0127] 4. Automatic adjustment of probe pressure and depth Pressure sensor feedback: The automated system monitors the probe contact pressure in real time to ensure that the probe does not apply too much or too little pressure when it contacts the wafer. The probe pressure sensor provides feedback signals, and the system automatically adjusts the pressure according to the preset standards.

[0128] Depth control: The depth control system of the probe card ensures that the probe contacts the wafer surface at the appropriate depth to avoid damage to the wafer due to excessive depth or poor contact due to excessive shallowness. Depth control can be accomplished through Z-axis motion and a precise feedback mechanism.

[0129] 5. Automatic calibration of electrical performance Electrical calibration: The automated system performs the electrical calibration process to ensure that the probe card can transmit signals correctly by performing electrical tests on standard test points on the pattern wafer. The system checks electrical parameters such as voltage, current, impedance, etc. to ensure that the electrical performance of the probe card meets the standards.

[0130] Signal transmission check: The automated system checks the signal transmission quality between the probe card and the pattern wafer using test equipment such as signal generators and oscilloscopes. The system automatically records the signal characteristics of each test point and makes necessary adjustments to the probe card based on the measured data.

[0131] 6. Dynamic probe calibration and performance verification Dynamic Probe Adjustment: During dynamic testing, the automated system simulates the probe card’s interaction with the wafer during the test, testing the probe’s stability in different positions and states. Through these dynamic adjustments, the system ensures that the probe maintains good contact throughout the test.

[0132] Performance Verification: The system will perform a comprehensive performance verification to ensure that the probe card can work stably under different test conditions. This step includes testing the probe's response speed, signal stability, probe life, etc.

[0133] 7. Test process and data collection Test starts: Once all calibration and alignment are completed, the automated system begins the actual MEMS chip test process. During the test, the probe card performs a series of electrical tests such as signal transmission, impedance matching, power testing, etc. through the automated control system.

[0134] Data acquisition and analysis: During the test, the automation system will collect electrical signals from the test points in real time, and the data will be transmitted to the control computer for analysis. The system will automatically check whether the signal of each test point meets the preset standards and generate a test report.

[0135] 8. Test completion and report generation Test completion signal: When all tests are completed, the automated system will send a test completion signal to prompt the operator to proceed to the next step. At this time, the probe card will be automatically retracted and the wafer will be removed.

[0136] Report generation: The automated system will automatically generate a test report containing detailed test results, electrical parameters, contact conditions, probe card performance data, etc. for each test point. The report can be used for quality control and failure analysis.

[0137] Data archiving and management: Completed test reports and related data will be archived by the automated system and backed up in a set format. Operators can query and analyze historical data at any time for quality tracking.

[0138] 9. System Exit and Maintenance Automatic system cleaning: After the test is completed, the automated system automatically cleans the test platform and prepares it for the next round of testing. This includes cleaning the probe card, detecting the device status, and clearing possible residual data.

[0139] Automatic reporting and equipment status monitoring: The automation system also monitors the health of the equipment, including whether the probe card, robotic arm, sensor, etc. need maintenance or replacement parts. The system can automatically issue maintenance reminders based on real-time monitoring data.

[0140] Summarize The control process of the automation system in MEMS probe card testing covers multiple links from pattern wafer loading, probe card installation, position calibration, electrical performance verification to final test data collection and report generation. Through highly integrated control systems and automation hardware, the accuracy, efficiency and reliability of testing can be greatly improved, while reducing interference from human operations and ensuring the consistency and repeatability of the test process.

[0141] 4. Probe wear monitoring Wear test: Design some wear-resistant test points on the Pattern Wafer and conduct long-term tests to evaluate the wear of the probe. These test points have known friction characteristics and durability.

[0142] When designing wear-resistant test points on Pattern Wafer, the differences between wear-resistant test points and other parts are mainly reflected in structural design, material selection and processing technology. These differences are explained below: 1. Differences in structural design Thicker metal layer: To improve wear resistance, the metal layer thickness of the wear test point is larger. A thicker metal layer can provide stronger wear resistance because the metal layer can play a better role in wear resistance during contact and reduce the damage caused by friction between the probe and the wafer surface.

[0143] Strengthened contact surface: By changing the contact structure design of the test point, such as increasing the contact area or using a specific geometric shape (such as round, square, etc.), local pressure can be reduced and wear can be reduced. Increasing the contact area helps to disperse the pressure of the probe, thereby reducing single-point wear.

[0144] Use a wear-resistant pad: Some designs add a wear-resistant pad to the test point surface to reduce direct friction. These pads may be metal, ceramic or other hard materials and can significantly increase durability.

[0145] 2. Differences in material selection Hard metal materials: For test points that require wear resistance, you can choose metal materials with higher hardness, such as gold (Au), platinum (Pt), tungsten (W), etc. These materials have high wear resistance and chemical stability, and can maintain stable performance during long-term use.

[0146] Alloy materials: Sometimes alloy materials containing other elements are used to enhance wear resistance. For example, tungsten copper alloy, tantalum alloy, etc., which have excellent wear resistance and corrosion resistance, can effectively improve the durability of the test point.

[0147] Special coatings: Some special coatings (such as diamond film (DLC), titanium nitride (TiN) and other hard coatings) are applied on the surface of the test point. These coatings can not only improve the wear resistance, but also reduce oxidation or corrosion, and extend the service life of the test point.

[0148] 3. Differences in processing technology Surface treatment process: Use advanced processes such as laser etching and electroplating to treat the test point surface to improve its wear resistance. Through these treatments, a smoother and more uniform structure can be formed on the test point surface, reducing friction and wear.

[0149] Heat treatment: Heat treatment of the test point material, such as annealing or quenching, can change the material's lattice structure, enhance its hardness, and thus improve wear resistance.

[0150] Thin film deposition technology: Physical vapor deposition (PVD) or chemical vapor deposition (CVD) technology is used to deposit a wear-resistant thin film on the surface of the test point. This film can not only enhance wear resistance, but also improve corrosion resistance and stability.

[0151] 4. Common design solutions Metallization layer reinforcement: Using a thicker metallization layer on the wear-resistant test point, such as a multi-layer electroplating process (such as gold, copper, titanium alloy, etc.), can reduce surface wear during contact.

[0152] Hard coating: Use hard coatings such as titanium nitride (TiN), which have extremely high hardness and can effectively reduce physical wear and chemical corrosion.

[0153] Local surface strengthening treatment: Use laser melting or electrochemical deposition methods to strengthen the surface of the test point to increase its surface hardness and enhance its wear resistance.

[0154] Summarize The difference between wear-resistant test points and other parts is mainly achieved through differences in structural design (such as metal layer thickness, contact surface shape, pad design, etc.), material selection (such as hard metal, alloy, coating material, etc.) and different processing techniques (such as surface treatment, heat treatment, thin film deposition, etc.). These differences enable wear-resistant test points to better withstand the wear caused by repeated contact between the probe and the wafer surface, extend the service life of the test points, and maintain high-precision test performance.

[0155] Performance tracking: Regularly record the test results of the probe card, analyze the contact resistance and other electrical performance indicators of the probes, and identify potential wear issues.

[0156] Maintenance plan: Develop maintenance and replacement plans based on wear monitoring results to ensure the performance stability of the probe card during use.

[0157] 5. Electrical performance verification Electrical testing: Pattern Wafer integrates standardized electrical characteristic test points, such as resistance, capacitance, and voltage source. The electrical performance of the probe card is verified by applying known signals to these test points.

[0158] Signal integrity analysis: Use oscilloscopes and other electronic test equipment to analyze the probe card's ability to transmit and receive signals during testing to ensure signal integrity.

[0159] Data comparison: Compare the measurement results with the expected electrical characteristics to verify that the probe card can accurately measure and transmit signals.

[0160] 6. Manufacturing defect detection Defect detection: Probe card manufacturing defect detection is performed on the pattern wafer, including short circuit, open circuit or poor contact of the probe, etc. Defect detection is performed using a high-resolution microscope or an automated inspection system.

[0161] Corrective measures: After the defect is found, necessary corrections or reprocessing are carried out. For example, adjusting the probe position, repairing the probe contact point or replacing the damaged probe.

[0162] Quality Control: Implement a strict quality control process to ensure that the probe card meets the specification requirements during the pattern wafer testing phase and prevent defective products from entering the actual testing phase.

[0163] These technical solutions effectively solve various technical problems in MEMS probe card testing and improve the accuracy and efficiency of testing by comprehensively applying standardized test points, automated equipment, image processing and electrical testing technologies.

[0164] Applying Pattern Wafer technology in MEMS probe card testing can bring the following outstanding technical effects.

[0165] 1. Improve test accuracy Standardized test points: The standardized test points designed on the Pattern Wafer provide precise calibration benchmarks, which help improve the accuracy of probe card alignment. Standardized test points ensure consistency and repeatability of each test, thereby improving the accuracy of test results.

[0166] Precise calibration: By calibrating the probe card on the Pattern Wafer, the position and response of the probe can be precisely adjusted to reduce measurement errors caused by probe position deviation.

[0167] 2. Speed ​​up testing Automated testing: Pattern Wafer applications support efficient automated testing processes. Automated equipment can quickly change test points and collect data, significantly increasing test speed and reducing test time compared to manual testing.

[0168] Pre-testing: Using Pattern Wafer for pre-testing before actual product testing can quickly identify probe card problems, avoiding delays caused by problems found during the production process.

[0169] 3. Reduce costs Reduced trial costs: Early calibration and testing on Pattern Wafer can reduce the failure rate and debugging time in actual product testing, thereby reducing test costs.

[0170] Extend probe life: The use of Pattern Wafer helps monitor probe wear and optimize probe usage and maintenance plans, thereby extending the probe life and reducing the frequency and cost of probe replacement.

[0171] 4. Optimize test design Test point layout optimization: The test point layout on the pattern wafer has been optimized to better match the test requirements of the actual product, ensuring that the probe card can cover all areas that need to be tested and improving the test coverage.

[0172] Electrical performance verification: The electrical performance test points on the Pattern Wafer can effectively verify the electrical performance of the probe card, including signal integrity and transmission characteristics, to ensure the stability and reliability of the probe card in actual testing.

[0173] 5. Improve test reliability Manufacturing defect detection: Pattern Wafer supports the detection of manufacturing defects of probe cards, including short circuits, open circuits, and poor contacts. Timely detection and correction of these defects improves the overall reliability of the probe card.

[0174] Performance tracking: By using Pattern Wafer for long-term probe card performance tracking and wear monitoring, potential performance issues can be identified in advance and the stability of the probe card can be ensured throughout the test process.

[0175] 6.Support various testing requirements Compatibility: Pattern Wafer can be designed to adapt to different types of MEMS device testing requirements, support various test schemes and test point configurations, and enhance the versatility and flexibility of the probe card.

[0176] Diversity of test points: Pattern Wafer can integrate a variety of test points, including resistors, capacitors, pads, etc., to support comprehensive electrical testing needs and meet the requirements of different test scenarios.

[0177] In general, the application of Pattern Wafer technology in MEMS probe card testing has significantly improved the accuracy, efficiency and economy of testing through precise calibration, automated testing, cost control and reliability improvement.

[0178] In MEMS probe card testing, this application includes the following key aspects of Pattern Wafer technology.

[0179] 1. Pattern Wafer Design Test point layout: covers the specific layout and configuration of test points on the pattern wafer. This includes how to optimize the location of the test points for best probe alignment and test accuracy.

[0180] Test point functionality: involves the design of different types of test points, such as resistance, capacitance, short or open test points, etc., and how to implement these functions.

[0181] 2. Manufacturing process Pattern Wafer Manufacturing Method: Covers the process of manufacturing Pattern Wafer, including material selection, pattern transfer technology, photolithography process and other manufacturing steps.

[0182] Precision Control: How to control the accuracy and consistency of test points during the manufacturing process to ensure high-quality Pattern Wafer.

[0183] 3. Probe card calibration Calibration method: includes the specific method and steps for calibrating the probe card using Pattern Wafer. This involves how to accurately adjust the position of the probe through the Pattern Wafer to ensure the accuracy of the measurement.

[0184] Automated Calibration System: involves the use of automated systems or equipment to perform probe card calibration on the Pattern Wafer, as well as calibration-related software algorithms.

[0185] 4. Test data processing Data Analysis Techniques: Includes techniques for acquiring and analyzing data from Pattern Wafer testing. Covers how to process test data to detect probe card performance and problems.

[0186] Fault diagnosis: involves the technical methods of using Pattern Wafer test data to perform probe card fault diagnosis and performance optimization.

[0187] 5. Probe life management Wear monitoring: involves the use of Pattern Wafer to monitor the wear of the probe, prevent probe failure and extend its service life.

[0188] Maintenance Optimization: How to use Pattern Wafer data to optimize the maintenance and care plan of probe cards.

[0189] 6. Multi-function test Compatibility: Pattern Wafer is designed with versatility and compatibility to support the testing requirements of different types of MEMS devices.

[0190] Test point integration: involves the technical solution of how to integrate multiple test points on the Pattern Wafer to meet different electrical testing requirements.

[0191] 7. Performance Improvement Test coverage: How to optimize the design of Pattern Wafer to improve test coverage and overall performance of probe card.

[0192] Performance verification method: involves methods and technologies for verifying the performance of test points on the Pattern Wafer to ensure the reliability and stability of the probe card.

[0193] Figure 4 A schematic diagram of the structure of a MEMS probe card detection device provided in one embodiment of the present application is shown in FIG. Figure 4As shown, the MEMS probe card detection device 400 of this embodiment includes: a parameter loading module 401 , a probe card fixing module 402 , a pattern wafer placement module 403 , an alignment module 404 , a calibration module 405 , and a testing module 406 .

[0194] The parameter loading module 401 is used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include the test type, the probe card type, the wafer type, and the test point location; The probe card fixing module 402 is used to fix the MEMS probe card to be tested on the probe seat of the testing equipment; The pattern wafer placement module 403 is used to place a MEMS pattern wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes a test point array identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network; An alignment module 404 is used to start a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; A calibration module 405, used to calibrate the MEMS probe card to be tested; The testing module 406 is used to execute the MEMS wafer testing task and to detect the MEMS probe card.

[0195] Optionally, the calibration module 405 is specifically used to calibrate the MEMS probe card to be tested by using calibration test points as contact points through calibration tasks; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration.

[0196] Optionally, the test module 406 is specifically used to execute corresponding test tasks for each model of MEMS wafer to be tested, and to detect the corresponding MEMS probe card to be tested; after completing the detection, replace the MEMS probe card to be tested corresponding to another model of MEMS wafer to be tested for detection until the test target is completed.

[0197] Optionally, the alignment module 404 is specifically used to start the visual alignment system, scan the MEMS pattern wafer, and identify the position of the marking point; based on the position of the marking point, coarsely adjust the position of the MEMS probe card to be tested; perform a contact test, and finely adjust the position of the MEMS probe card to be tested according to the test results to align it with the MEMS pattern wafer.

[0198] Optionally, a calibration module 405 is specifically used to adjust the pressure based on the pressure sensor data so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard; Collecting a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard; Outputting electrical signals of corresponding parameters through the MEMS probe card to be tested, and adjusting the probes based on the signal data of the test points on the MEMS pattern wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets the preset standard; Based on the test task of the MEMS probe card to be tested, the MEMS probe card is moved and tested to detect whether the signal stability meets the preset standard.

[0199] The device of this embodiment can be used to execute the method of any of the above embodiments. Its implementation principle and technical effects are similar and will not be described in detail here.

[0200] Figure 5 A schematic diagram of the structure of an electronic device provided in one embodiment of the present application is shown in FIG. Figure 5 As shown, the electronic device 500 of this embodiment may include: a memory 501 and a processor 502 .

[0201] The memory 501 stores a computer program that can be loaded by the processor 502 and execute the method in the above embodiment.

[0202] The processor 502 and the memory 501 are connected, for example, via a bus.

[0203] Optionally, the electronic device 500 may further include a transceiver. It should be noted that in actual applications, the number of transceivers is not limited to one, and the structure of the electronic device 500 does not constitute a limitation on the embodiments of the present application.

[0204] The processor 502 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It may implement or execute various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. The processor 502 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, and the like.

[0205] The bus may include a path to transmit information between the above components. The bus may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus.

[0206] The memory 501 may be a ROM (Read Only Memory) or other types of static storage devices that can store static information and instructions, a RAM (Random Access Memory) or other types of dynamic storage devices that can store information and instructions, or an EEPROM (Electrically Erasable Programmable Read Only Memory), a CD-ROM (Compact Disc Read Only Memory) or other optical disk storage, optical disk storage (including compressed optical disk, laser disk, optical disk, digital versatile disk, Blu-ray disk, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0207] The memory 501 is used to store the application code for executing the solution of the present application, and the execution is controlled by the processor 502. The processor 502 is used to execute the application code stored in the memory 501 to implement the contents shown in the above method embodiment.

[0208] The electronic devices include, but are not limited to, mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), and fixed terminals such as digital TVs, desktop computers, etc. It can also be a server, etc. Figure 5 The electronic device shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0209] The electronic device of this embodiment can be used to execute the method of any of the above embodiments, and its implementation principle and technical effect are similar, which will not be described in detail here.

[0210] The present application also provides a computer-readable storage medium storing a computer program that can be loaded by a processor and execute the method in the above embodiment.

[0211] Those skilled in the art can understand that all or part of the steps of implementing the above-mentioned method embodiments can be completed by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, the steps of the above-mentioned method embodiments are executed; and the aforementioned storage medium includes: ROM, RAM, disk or optical disk and other media that can store program codes.

Claims

1. A MEMS probe card detection method, characterized in that: Applied to MEMS wafer detection equipment, the method comprises: Loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location; Fixing the MEMS probe card to be tested on a probe holder of a testing device; Placing a MEMS mode wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS mode wafer includes a test point array identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, wherein the test points include standard pads, standard contact points, and a standard resistor network; Starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; Calibrate the MEMS probe card to be tested; Execute the MEMS wafer test task to be tested, and detect the MEMS probe card to be tested.

2. The method according to claim 1, characterized in that The MEMS model wafer includes a plurality of crystal grains, each crystal grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged in the same manner, and each row of contacts has the same arrangement as the contacts at corresponding positions of the same model of the MEMS wafer to be tested; One row of contacts is the test points for calibration; The calibrating the MEMS probe card to be tested includes: Using the calibration test points as contact points, calibrating the MEMS probe card to be tested through a calibration task; The calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration.

3. The method according to claim 1, characterized in that The MEMS model wafer includes a plurality of crystal grains, each crystal grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts, at least one row of contacts is arranged differently from other rows, and each row of contacts is respectively arranged identically to the contacts at corresponding positions of at least two different models of MEMS wafers to be tested; The performing of the MEMS wafer test task to be tested and detecting the MEMS probe card to be tested includes: For each model of the MEMS wafer to be tested, a corresponding test task is executed, and the corresponding MEMS probe card to be tested is tested; After the test is completed, the MEMS probe card to be tested corresponding to another model of the MEMS wafer to be tested is replaced for testing until the test target is achieved.

4. The method according to any one of claims 1 to 3, characterized in that: The MEMS mode wafer also includes a marking point, and the starting of the visual alignment system to align the MEMS probe card to be tested with the MEMS mode wafer includes: Starting the visual alignment system, scanning the MEMS pattern wafer, and identifying the position of the marking point; Based on the position of the marking point, coarsely adjusting the position of the MEMS probe card to be tested; A contact test is performed, and the position of the MEMS probe card to be tested is finely adjusted according to the test result to align it with the MEMS model wafer.

5. The method according to any one of claims 1 to 3, characterized in that: The calibrating the MEMS probe card to be tested includes: Based on the pressure sensor data, pressure adjustment is performed so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard; Collecting a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard; Outputting electrical signals of corresponding parameters through the MEMS probe card to be tested, and performing probe adjustment based on signal data of test points on the MEMS mode wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard; Based on the test task of the MEMS probe card to be tested, a mobile test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

6. A MEMS mode wafer, characterized in that: Used to perform MEMS probe card detection in conjunction with the method described in any one of claims 1-5; the MEMS model wafer includes: a test point array that is the same as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network.

7. The MEMS mode wafer according to claim 6, characterized in that: The MEMS model wafer includes a plurality of crystal grains, each crystal grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged identically, and each row of contacts is arranged identically to the contact arrangement of corresponding positions of the same model of the MEMS wafer to be tested; one row of contacts is a calibration test point; or, The MEMS model wafer includes several grains, each grain includes multiple contact arrays, each contact array includes multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is respectively the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

8. The MEMS mode wafer according to claim 6, characterized in that: The test point array also includes wear-resistant test points, the main material of the wear-resistant test points is heat-treated, and the surface of the wear-resistant test points is coated with a hard coating; the hard coating includes a diamond film and titanium nitride.

9. A MEMS probe card detection device, characterized in that: include: A parameter loading module, used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location; A probe card fixing module, used for fixing the MEMS probe card to be tested on a probe seat of a testing device; A pattern wafer placement module is used to place a MEMS pattern wafer matching the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes a test point array identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network; An alignment module, used for starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; A calibration module, used for calibrating the MEMS probe card to be tested; The testing module is used to execute the testing task of the MEMS wafer to be tested and to detect the MEMS probe card to be tested.

10. A MEMS probe card detection device, characterized in that: include: Memory and processor; The memory is used to store program instructions; The processor is used to call and execute the program instructions in the memory to perform the method according to any one of claims 1-5.

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