MEMS mode wafer and MEMS probe card detection method, device, and storage medium

Abstract

The present application relates to a method, device, and storage medium for detecting a MEMS pattern wafer and a MEMS probe card. The detection method is applied to a MEMS wafer detection device, and includes: loading the test configuration parameters of the MEMS probe card to be tested; fixing the MEMS probe card to be tested on the probe holder of the test device; placing a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on the test platform of the test device; the MEMS pattern wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested; starting the visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; calibrating the MEMS probe card to be tested; executing the test task of the MEMS wafer to be tested, and detecting the MEMS probe card to be tested. Using the MEMS pattern wafer, the test task is automatically executed to achieve efficient testing of the MEMS probe card.

Description

Technical Field

[0001] The present application relates to the field of semiconductor testing technology, and in particular to a method, device, and storage medium for detecting a MEMS mode wafer and a MEMS probe card. Background Art

[0002] MEMS (micro-electromechanical systems) technology has become crucial in the modern semiconductor industry. MEMS products, due to their tiny size and high-precision functionality, are widely used in various fields. To ensure the reliability of MEMS devices in practical applications, testing of MEMS wafers during the production process is crucial. MEMS probe cards, as a key tool for this testing, have a direct impact on test results and, in turn, the quality and performance of MEMS devices. Therefore, testing MEMS probe cards has become a crucial step.

[0003] In related technologies, workers typically use different equipment to test different probe properties separately, and only one probe can be tested at a time. MEMS probe cards often contain a large number of probes. Using conventional testing methods, it can take around a month to complete the testing of a single probe card. This results in long testing cycles and low test efficiency, which in turn affects the production efficiency of MEMS devices. Summary of the Invention

[0004] The present application provides a method, device, and storage medium for testing a MEMS pattern wafer and a MEMS probe card. Relying on existing MEMS wafer testing equipment, using a MEMS pattern wafer with test points consistent with the MEMS wafer to be tested, the method automatically executes the MEMS wafer test task to simulate the test process of the MEMS wafer to be tested. During this test process, test data from each test point can be obtained in a short period of time. This data is used to analyze and characterize the performance of the MEMS probe card to be tested, achieving efficient testing of the MEMS probe card and improving the production efficiency of MEMS devices.

[0005] In a first aspect, the present application provides a MEMS probe card detection method, which is applied to a MEMS wafer detection device, and the method includes:

[0006] Loading test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location;

[0007] Fixing the MEMS probe card to be tested on a probe holder of a testing device;

[0008] Placing a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network;

[0009] Starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer;

[0010] calibrating the MEMS probe card to be tested;

[0011] Generate MEMS wafer test tasks based on test type, probe card type, wafer type, and test point location;

[0012] Execute the MEMS wafer test task to be tested and detect the MEMS probe card to be tested.

[0013] Optionally, the MEMS model wafer includes a plurality of dies, each of which includes a plurality of contact arrays, each of which includes a plurality of rows of contacts with the same arrangement, and each row of contacts has the same arrangement as the contacts at corresponding positions on the MEMS wafer to be tested of the same model; one row of contacts is a test point for calibration;

[0014] The calibrating the MEMS probe card to be tested includes:

[0015] The calibration test points are used as contact points to calibrate the MEMS probe card to be tested through calibration tasks; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration.

[0016] Optionally, the MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

[0017] Optionally, the MEMS pattern wafer further includes marking points, and starting the visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer includes:

[0018] Starting a visual alignment system to scan the MEMS pattern wafer and identify the position of the marking point;

[0019] Based on the position of the marking point, coarsely adjusting the position of the MEMS probe card to be tested;

[0020] A contact test is performed, and the position of the MEMS probe card to be tested is fine-tuned according to the test result to align it with the MEMS pattern wafer.

[0021] Optionally, calibrating the MEMS probe card to be tested includes:

[0022] Based on the pressure sensor data, pressure adjustment is performed so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard;

[0023] Acquiring a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard;

[0024] Outputting electrical signals of corresponding parameters through the MEMS probe card to be tested, and performing probe adjustment based on signal data of test points on the MEMS pattern wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard;

[0025] Based on the test task of the MEMS probe card to be tested, a movement test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

[0026] In the second aspect, the present application provides a MEMS mode wafer for performing MEMS probe card detection in conjunction with the method described in any one of the first aspects; the MEMS mode wafer includes: a test point array that is the same as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network.

[0027] Optionally, the MEMS model wafer includes a plurality of dies, each of which includes a plurality of contact arrays, each of which includes a plurality of rows of contacts with the same arrangement, and each row of contacts has the same arrangement as the contacts at corresponding positions on the MEMS wafer to be tested of the same model; one row of contacts is a test point for calibration;

[0028] or,

[0029] The MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

[0030] In a third aspect, the present application provides a MEMS probe card detection device, comprising:

[0031] A parameter loading module is used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location;

[0032] A probe card fixing module, used for fixing the MEMS probe card to be tested on a probe seat of a testing device;

[0033] A pattern wafer placement module is used to place a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes a test point array that is identical to that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network;

[0034] an alignment module, configured to activate a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer;

[0035] A calibration module, used for calibrating the MEMS probe card to be tested;

[0036] The test module is used to generate a test task for the MEMS wafer to be tested according to the test type, probe card type, wafer type, and test point location; execute the test task for the MEMS wafer to be tested, and detect the MEMS probe card to be tested.

[0037] In a fourth aspect, the present application provides a MEMS probe card detection device, comprising: a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and execute the method of the first aspect.

[0038] In a fifth aspect, the present application provides a computer-readable storage medium storing a computer program that can be loaded by a processor and execute the method of the first aspect.

[0039] In a sixth aspect, the present application provides a computer program product, comprising: a computer program; when the computer program is executed by a processor, it implements the method as described in any one of the first aspects.

[0040] The present application provides a method, device, and storage medium for detecting a MEMS pattern wafer and a MEMS probe card. The MEMS probe card detection method is applied to a MEMS wafer detection device, and the method includes: loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include the test type, probe card type, wafer type, and test point position; fixing the MEMS probe card to be tested on the probe seat of the test device; placing a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on the test platform of the test device; the MEMS pattern wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and standard resistor networks; starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; calibrating the MEMS probe card to be tested; generating a test task for the MEMS wafer to be tested according to the test type, probe card type, wafer type, and test point position; executing the MEMS wafer test task to be tested and detecting the MEMS probe card to be tested. Relying on existing MEMS wafer detection equipment, using MEMS model wafers that are consistent with the test points of the MEMS wafer to be tested, the test tasks of the MEMS wafer to be tested are automatically executed, and the test process of the MEMS wafer to be tested is simulated. During this test process, comprehensive test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0042] Figure 1 A flowchart of a MEMS probe card detection method provided in one embodiment of the present application;

[0043] Figure 2 A schematic diagram of the arrangement of a contact array provided in one embodiment of the present application;

[0044] Figure 3 A schematic diagram of another contact array arrangement provided in one embodiment of the present application;

[0045] Figure 4 A schematic structural diagram of a MEMS probe card detection device provided in one embodiment of the present application;

[0046] Figure 5 A schematic structural diagram of an electronic device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0047] To make the purpose, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0048] In this document, the term "and / or" simply describes a relationship between related objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, or B exists alone. Furthermore, the character " / " in this document, unless otherwise specified, generally indicates an "or" relationship between the related objects.

[0049] The embodiments of the present application are described in further detail below with reference to the accompanying drawings.

[0050] MEMS (micro-electromechanical systems) technology has become crucial in the modern semiconductor industry. MEMS products, due to their tiny size and high-precision functionality, are widely used in various fields. To ensure the reliability of MEMS devices in practical applications, testing of MEMS wafers during the production process is crucial. MEMS probe cards, as a key tool for this testing, have a direct impact on test results and, in turn, the quality and performance of MEMS devices. Therefore, testing MEMS probe cards has become a crucial step.

[0051] In related technologies, workers typically use different equipment to test different probe properties separately, and only one probe can be tested at a time. MEMS probe cards often contain a large number of probes. Using conventional testing methods, it can take around a month to complete the testing of a single probe card. This results in long testing cycles and low test efficiency, which in turn affects the production efficiency of MEMS devices.

[0052] Based on this, the present application provides a method, device, and storage medium for detecting a MEMS pattern wafer and a MEMS probe card. Relying on MEMS wafer detection equipment, using a MEMS pattern wafer that is consistent with the test points of the MEMS wafer to be tested, the test task of the MEMS wafer to be tested is automatically executed, and the test process of the MEMS wafer to be tested is simulated. During this test process, the test data of each test point can be obtained in a short time, thereby analyzing and characterizing the performance of the MEMS probe card to be tested, realizing efficient testing of the MEMS probe card, and improving the production efficiency of MEMS devices. For specific implementation methods, please refer to the following embodiments.

[0053] Figure 1 This is a flow chart of a MEMS probe card detection method provided in one embodiment of the present application. The method of this embodiment can be applied to MEMS wafer detection equipment. Figure 1 As shown, the method includes the following steps.

[0054] S101 , loading the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location.

[0055] In actual application scenarios, different types of MEMS wafers have different functions, different internal circuit structures, and different test points (test points). They may need to be tested with MEMS probe cards with different probe structures. The specific structures of different types of MEMS probe cards may also be different. Therefore, a MEMS probe card may only be able to test one type of MEMS wafer, or a MEMS probe card may be able to test multiple types of MEMS wafers. In this application, the MEMS probe card to be tested is a probe card tested using this solution, and the MEMS wafer to be tested is a wafer to be tested using this MEMS probe card to be tested. A MEMS mode wafer is a wafer that has the same test point array as the MEMS wafer to be tested and is used for probe card testing.

[0056] The test types listed above are those required for this test. Probe card testing generally includes mechanical testing and electrical testing. Mechanical testing involves detecting structural defects in the probe card, such as short circuits, open circuits, and poor contact. Electrical testing involves testing the probe card's electrical characteristics, such as signal transmission stability and integrity.

[0057] The probe card type includes the category, model, probe distribution structure, etc. of the probe card.

[0058] The wafer type includes the category and model of the MEMS wafer to be tested.

[0059] The test point position represents the position of the test point in the MEMS wafer to be tested corresponding to the MEMS probe card to be tested.

[0060] S102 , fixing the MEMS probe card to be tested on a probe holder of a testing device.

[0061] MEMS wafer inspection equipment is equipped with a probe holder that can fix the MEMS probe card and an automation system that can control the installation of the probe card. By controlling an electric actuator (such as a pneumatic system or an electric thruster), the probe card can be fixed in place to accurately install the probe card on the test platform.

[0062] S103 , placing a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on a test platform of a test device.

[0063] The MEMS pattern wafer includes the same test point array as that of the MEMS wafer to be tested corresponding to the MEMS probe card to be tested. The test points include standard pads, standard contact points, standard resistor networks, etc.

[0064] MEMS wafer inspection equipment has a structure that can load MEMS wafers and a structure that can achieve precise positioning. For example, the MEMS pattern wafer is loaded onto the test platform through an automated robotic arm or conveyor system, and the wafer is accurately placed according to the preset target position in conjunction with the automated visual alignment system to ensure its accurate positioning.

[0065] In some specific embodiments, the automated visual alignment system uses cameras and image processing technology to identify alignment mark points on the wafer (such as test points, pad marks, etc.), determine the position and angle of the wafer, and analyze the positioning deviation between these alignment mark points and the preset target position. According to the deviation, the wafer position is adjusted through precise mechanical adjustment devices (such as XY axis and Z axis motion platform) until it is adjusted to the preset target position.

[0066] S104 , starting the visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer.

[0067] In some specific embodiments, the MEMS pattern wafer also includes marking points, and the alignment process includes: starting the visual alignment system, scanning the MEMS pattern wafer, and identifying the position of the marking points; based on the position of the marking points, coarsely adjusting the position of the MEMS probe card to be tested; performing a contact test, and fine-adjusting the position of the MEMS probe card to be tested according to the test results to align it with the MEMS pattern wafer.

[0068] Start the visual alignment system, scan the surface of the MEMS pattern wafer, identify the position of the mark point or contact point, and roughly adjust the position of the MEMS probe card to be tested so that the contact point of the MEMS probe card to be tested is roughly aligned with the test point on the pattern wafer, thereby achieving preliminary alignment between the MEMS pattern wafer and the MEMS probe card to be tested.

[0069] Specifically, the automated vision system will scan the position of the probe and identify the test points on the preset pattern wafer. By adjusting the XY and Z axes of the probe card, the position of the probe card is automatically adjusted so that each probe contacts the test point on the wafer.

[0070] After the vision system completes coarse adjustment, the probe card's position is further controlled through fine adjustment. This fine adjustment process can be controlled by software, enabling precise adjustments to each probe's contact point. For example, a contact test is performed to verify that each probe is properly contacting the test point on the pattern wafer. During this process, further adjustments to the probe's position and angle may be required to ensure that there is no poor contact between each probe and the contact point.

[0071] Specifically, an automated vision system scans the probes' positions to ensure each probe is precisely aligned with the wafer's test point. If the vision system detects a misalignment between the probe and the test point, it controls the probe card's fine-tuning mechanism for further adjustments.

[0072] S105 , calibrating the MEMS probe card to be tested.

[0073] Alignment refers to the vertical alignment of the probe and the test point, ensuring that the probe's contact area is aligned with the test point to the maximum extent possible. This calibration step adjusts the contact of the probe card. This primarily involves pressure calibration, depth calibration, electrical calibration, and dynamic calibration.

[0074] Specifically, pressure calibration includes adjusting the pressure based on the pressure sensor data so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard.

[0075] MEMS wafer inspection equipment is equipped with a probe pressure sensor that can detect probe pressure. By moving the probe until it gradually contacts the pattern wafer, pressure data from the probe pressure sensor is simultaneously collected until a preset standard is reached. This standard has a corresponding range of requirements in the wafer inspection field and can be set according to the actual test scenario. This calibration method ensures that the probe applies appropriate pressure when contacting the pattern wafer, ensuring a good test foundation and preventing improper pressure from affecting test results.

[0076] Specifically, the depth calibration includes collecting a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard.

[0077] The MEMS wafer inspection equipment is equipped with an image acquisition device and a light source generating device that can detect the probe depth. The light source can be a white light source or a yellow light source. When performing depth calibration, the image acquisition device and the light source generating device are turned on. Under the illumination of the light source, light and shadow will be formed at the contact position between the probe and the test point. The image acquisition device collects the image here and organizes it into a grayscale image to determine the probe contact depth. In some specific implementation methods, grayscale images at different depths can be collected as training sample data to train a deep learning model. The collected grayscale images are input into the trained deep learning model for contact depth recognition.

[0078] Specifically, the MEMS probe card to be tested outputs an electrical signal of corresponding parameters, and probe adjustment is performed based on the signal data of the test point on the MEMS pattern wafer that contacts the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets the preset standard.

[0079] MEMS wafer inspection equipment is equipped with test equipment such as signal generators and oscilloscopes to test the electrical performance of probes. These test equipment conducts electrical tests on standard test points on the pattern wafer, automatically recording the signal characteristics of each test point (including electrical parameters such as voltage, current, and impedance). The signal transmission quality between the probe card and the pattern wafer is checked, and the probe card is adjusted as necessary based on the measured data.

[0080] For example, during a voltage test, a signal generator generates voltages of varying magnitudes, which are then applied to test points on the pattern wafer using a probe card. The voltages at the probes and the test points are then measured to determine if the output is normal. An oscilloscope or other test equipment can be used to check for signal distortion or interference.

[0081] In this test scenario, the structure and test point array of the MEMS wafer to be tested are known. The MEMS pattern wafer is identical, with known geometry and electrical characteristics. Therefore, the effect of applied signal parameters on the test points can be predicted. Comparing the predicted signal values ​​with the actual measured values ​​can determine whether the electrical performance meets the expected standards, and if not, the probe card can be adjusted as necessary.

[0082] Specifically, based on the test task of the MEMS probe card to be tested, a movement test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

[0083] During dynamic testing, the automated system simulates the probe card's interaction with the wafer during testing, testing the probe's stability in various positions and states. Through these dynamic adjustments, the system ensures that the probe maintains good contact throughout the test, ensuring the probe card operates stably under diverse test conditions. This step includes testing probe response speed, signal stability, and probe lifespan.

[0084] S106 , executing the MEMS wafer test task to be tested, and testing the MEMS probe card to be tested.

[0085] In some implementations, the prepared MEMS wafer test tasks to be tested can be loaded into the device system by loading the test configuration parameters and executed one by one.

[0086] In other implementations, the device can also generate a MEMS wafer test task based on the test type, probe card type, wafer type, and test point location. The test task includes the test point test sequence and probe card movement path.

[0087] After all calibration and alignment are complete, the automated system begins the actual MEMS chip testing process. During testing, the probe card performs a series of electrical tests, such as signal transmission, impedance matching, and power testing, through the automated control system. During testing, the automated system collects electrical signals from test points in real time. This data is then transmitted to the control computer for analysis, verifying that the signal at each test point meets pre-set standards.

[0088] In this embodiment, relying on the existing MEMS wafer detection equipment, a MEMS model wafer that is consistent with the test points of the MEMS wafer to be tested is used to automatically execute the test tasks of the MEMS wafer to be tested, and simulate the test process of the MEMS wafer to be tested. During this test process, comprehensive test data of each test point can be obtained in a short time, so as to analyze and characterize the performance of the MEMS probe card to be tested, realize efficient testing of the MEMS probe card, and improve the production efficiency of MEMS devices.

[0089] The step numbers identified above represent only one execution order for this embodiment. In other embodiments, the execution order of some steps may be adjusted without affecting the effectiveness of the method. For example, S102 and S103 may be executed simultaneously or sequentially. In addition to the core steps described above, the following steps may also be performed to ensure detection accuracy and enhance the value of test data.

[0090] Before testing begins, the automated system performs a hardware check, including the probe card, positioning device, vision alignment system, and probe pressure control system. This ensures that all equipment is in proper working order and detects any faults or deviations. The system also performs a self-test routine to ensure that all sensors, actuators, electrical connections, and automation software are functioning properly.

[0091] In some embodiments, when all tests are complete, the automated system signals a test completion signal, automatically retracts the probe card, and removes the wafer. The automated system then automatically cleans the test platform, preparing it for the next round of testing. This includes cleaning the probe card, monitoring the equipment status, and clearing any residual data. The automated system also monitors the equipment's health, including whether the probe card, robotic arm, and sensors require maintenance or replacement. The system can automatically issue maintenance reminders based on real-time monitoring data.

[0092] During the inspection process, data can be collected and a test report generated simultaneously. Specifically, the report includes detailed test results for each test point, electrical parameters, contact conditions, and probe card performance data. The report can be used for quality control and failure analysis. Completed test reports and related data can be archived by the automated system and backed up in a predefined format. Historical data can be queried and analyzed at any time for quality tracking.

[0093] The automation system's control process for MEMS probe card testing encompasses multiple steps, from pattern wafer loading, probe card installation, position calibration, electrical performance verification, to final test data collection and report generation. Through highly integrated control systems and automated hardware, test accuracy, efficiency, and reliability are significantly improved, while reducing human interference and ensuring consistency and repeatability throughout the test process.

[0094] In order to support the implementation of the above-mentioned testing scheme, the present application also provides a MEMS model wafer. Most fundamentally, this MEMS model wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, to ensure that it can cooperate to complete the complete simulation of the various test items involved in the wafer testing of the MEMS probe card to be tested, thereby ensuring the test effect.

[0095] In terms of the details of the contact arrangement structure, a MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts with the same arrangement, and each row of contacts is the same as the contact arrangement of the corresponding position of the MEMS wafer to be tested of the same model; one of the rows of contacts is the calibration test point. When calibrating the MEMS probe card to be tested, the calibration test points can be used as contact points, and the MEMS probe card to be tested can be calibrated through calibration tasks; calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration. The arrangement reference of one of the contact arrays Figure 2 .

[0096] Another type of MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts, the arrangement of at least one row of contacts is different from the other rows, and each row of contacts is the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested. When performing the test task of the MEMS wafer to be tested and inspecting the MEMS probe card to be tested, the corresponding test task can be performed one by one for each model of MEMS wafer to be tested, and the corresponding MEMS probe card to be tested can be inspected; after the inspection is completed, the MEMS probe card to be tested corresponding to another model of MEMS wafer to be tested is replaced for inspection until the test goal is achieved. The arrangement reference of one of the contact arrays Figure 3 .

[0097] In addition to conventional testing, the probes can also be tested for wear.

[0098] Correspondingly, wear-resistant test points can be designed on the model wafer for long-term testing to evaluate probe wear. These test points have known friction characteristics and durability. Specifically, structural design, material selection, and processing techniques can enhance friction characteristics and durability.

[0099] In terms of structural design, a thicker metal layer can be set, the contact surface can be strengthened, and a wear-resistant pad can be used to improve wear resistance.

[0100] To improve wear resistance, the metal layer at the wear-resistant test point is relatively thicker. A thicker metal layer can provide better wear resistance during contact, providing stronger wear resistance and reducing damage caused by friction between the probe and the wafer surface.

[0101] Increasing the contact area of ​​the contact point or adopting a specific geometric shape (such as round, square, etc.) can reduce local pressure and reduce wear. Increasing the contact area helps to distribute the pressure of the probe, thereby reducing single-point wear.

[0102] Adding a wear-resistant pad to the test point surface to reduce direct friction. These pads may be metal, ceramic or other hard materials, which can significantly improve durability.

[0103] In terms of material selection, hard metal materials and special coatings can be selected to improve wear resistance.

[0104] For test points that require wear resistance, metal materials with higher hardness can be selected, such as gold (Au), platinum (Pt), tungsten (W), etc. These materials have high wear resistance and chemical stability and can maintain stable performance during long-term use.

[0105] Alternatively, some special coatings (such as diamond coating (DLC), titanium nitride (TiN) and other hard coatings) can be applied to the surface of the test point. These coatings can not only improve the wear resistance, but also reduce oxidation or corrosion, thereby extending the service life of the test point.

[0106] In terms of processing technology, different surface treatment processes and material treatment processes can be used to improve wear resistance.

[0107] Advanced processes such as laser etching and electroplating are used to treat the surface of the test points to improve their wear resistance. These treatments can create a smoother and more uniform structure on the surface of the test points, reducing friction and wear.

[0108] Heat treatment of the test point material, such as annealing or quenching, can change the material's lattice structure, increase its hardness, and thus improve wear resistance.

[0109] Physical vapor deposition (PVD) or chemical vapor deposition (CVD) technology is used to deposit a wear-resistant film on the surface of the test point. This film not only enhances wear resistance, but also improves corrosion resistance and stability.

[0110] Wear-resistant test points differ from other parts primarily through differences in structural design (such as metal layer thickness, contact surface shape, and pad design), material selection (such as hard metals and coating materials), and processing techniques (such as surface treatment, heat treatment, and thin film deposition). These differences enable wear-resistant test points to better withstand the wear caused by repeated contact between the probe and the wafer surface, extending the test point's service life while maintaining high-precision testing performance.

[0111] In a specific embodiment, the MEMS probe card detection method of the present application includes the following steps.

[0112] 1. Probe Card Calibration

[0113] Standardized test points: A standardized array of test points with known geometry and electrical characteristics is etched on a pattern wafer. These test points can include metal pads, contact pads, and resistor networks.

[0114] Probe alignment: Use an image processing system to capture images of the test points on the Pattern Wafer to ensure that the probes on the probe card can be accurately aligned with these standardized test points.

[0115] Calibration process: By applying a known voltage or current to the test points and measuring the probe's response, the alignment accuracy and electrical performance of the probe card are evaluated. These measurement results are used to adjust the probe card's probe positions and calibrate the probe's response characteristics.

[0116] In MEMS (micro-electromechanical systems) probe card testing, pattern wafers are used primarily to provide standardized contact points. These contact points are used to calibrate the probe card's positioning accuracy, electrical performance, and contact quality. Using pattern wafers ensures that the probe card accurately contacts the electrical test points of the chip under test during testing. The following is a detailed description of the probe alignment and calibration process.

[0117] 1. Preparation

[0118] Pattern wafer design: A pattern wafer is a specially designed wafer with test contacts. These can be standardized pads, contact pads, or other design features that are used in the calibration process.

[0119] Test platform preparation: Before calibration, ensure that the test platform, probe card, pattern wafer, and other test equipment (such as oscilloscope, signal generator, etc.) are prepared and in normal working condition.

[0120] 2. Install the probe card

[0121] Fix the probe card: Fix the probe card on the probe holder of the test equipment to ensure that the connection is firm and in a stable working state.

[0122] 3. Pattern wafer positioning

[0123] Pattern wafer placement: Place the pattern wafer on the test platform. Ensure accurate positioning of the pattern wafer through precise mechanical operations, which can be achieved by pneumatic devices or precision robotic arms.

[0124] 4. Initial alignment

[0125] Marking and alignment: The pattern wafer has marking points that serve as references to help the vision system identify the wafer's position and determine its precise location on the test platform. These marking points can be used to align the pattern wafer with the probe card.

[0126] Calibration system start: Start the vision alignment or optical alignment system to ensure that the pattern wafer can be aligned with the help of the vision system.

[0127] Vision alignment: The vision alignment system is activated to scan the surface of the pattern wafer, identify the locations of the markers or contact points, and perform preliminary alignment between the pattern wafer and the probe card. Modern probe card test platforms are typically equipped with automated vision alignment systems that can quickly locate contact points on the pattern wafer.

[0128] Probe card coarse adjustment: Based on the results of visual alignment, rough probe card position adjustment is performed to align the contact points of the probe card roughly with the test points on the pattern wafer.

[0129] 5. Accurately position the probe

[0130] Probe fine-tuning: After the vision system completes the coarse adjustment, the probe card position is further controlled through fine-tuning. The fine-tuning process can be achieved through software control, and the contact point of each probe can be finely adjusted.

[0131] Contact test: Perform a contact test to check whether each probe is properly contacting the test point on the pattern wafer. During this process, it may be necessary to further adjust the position and angle of the probe to ensure that there is no poor contact between each probe and the contact point.

[0132] 6. Probe card pressure calibration

[0133] Pressure adjustment: By adjusting the pressure applied to the probe, ensure that the probe is not too loose or in excessive contact with the pattern wafer surface. Too low a pressure may result in poor contact, while too high a pressure may damage the probe or wafer.

[0134] Pressure sensor calibration: Use pressure sensors to monitor the applied pressure of the probes to ensure that the pressure of all probes is uniform and meets the standard.

[0135] 7. Depth and distance calibration

[0136] Probe depth calibration: Calibrates the contact depth between the probe and the pattern wafer surface to ensure that the probe is not too deep and damages the surface, nor too shallow to form a stable electrical contact.

[0137] Precise docking: Ensure that each probe is aligned with and contacts the contact point of the pattern wafer to ensure reliable signal transmission.

[0138] 8. Electrical performance calibration

[0139] Signal transmission check: After mechanical alignment, check the signal transmission quality of each probe to ensure stable signal transmission between the probe and the pattern wafer. An oscilloscope or other test equipment can be used to check for signal distortion or interference.

[0140] Impedance matching: Ensure that the impedance of the probe matches the impedance of the test circuit to avoid signal distortion. Impedance mismatch may cause signal reflection, which will affect the accuracy of the test results.

[0141] Electrical calibration: Calibrate the electrical performance of the probe card, including the adjustment of parameters such as voltage and current, to ensure that the signal in the test environment can be accurately transmitted to the test point through the probe card.

[0142] 9. Dynamic calibration and performance verification

[0143] Dynamic testing: Dynamic testing of wafers using a probe card simulates the probe movement during actual testing. This allows us to check the stability and consistency of the probe card and ensure that it does not shift during the entire test process.

[0144] Signal integrity testing: During the dynamic calibration process, tools such as an oscilloscope are used to verify signal integrity to ensure that the probe card contacts are stable and do not introduce noise or interference.

[0145] 10. Generate calibration report

[0146] Record calibration data: After completing the calibration, record all calibration data, including probe position, pressure, electrical parameters, etc. This data will be used as a reference for subsequent tests.

[0147] Calibration report generation: Generates a report based on the calibration data, detailing all calibration parameters and test results. These reports can be used for future quality control to ensure the accuracy and consistency of each test.

[0148] 11. Verification and final confirmation

[0149] Retest: After calibration is completed, retest is performed to confirm that the probe card can work stably in actual testing and can accurately contact all test points on the pattern wafer.

[0150] Final confirmation: After multiple calibrations and verifications, it is confirmed that the probe card has been fully calibrated and can be used for formal MEMS chip testing.

[0151] Summarize

[0152] Through the use of pattern wafers, probe card calibration ensures precise contact between the probe and the chip during subsequent MEMS testing. The calibration process involves multiple aspects, including probe position, pressure, and electrical performance. Through precise mechanical adjustment and electrical calibration, test accuracy and reliability are ensured. These steps include preliminary alignment, precise positioning, pressure calibration, depth calibration, electrical calibration, and dynamic calibration. The resulting calibration report provides a detailed basis for subsequent testing.

[0153] 2. Test point layout verification

[0154] Design Verification: The pattern wafer design includes a test point layout that matches the actual MEMS device. The placement of these test points reflects the test requirements of the actual product.

[0155] Contact test: Perform a probe contact test on the pattern wafer to verify that the probe can reliably contact each test point in the design. Use a scanning electron microscope (SEM) or other high-precision imaging tools to check the contact quality.

[0156] Layout optimization: Based on the contact test results, adjust the layout of the test points or the design of the probe card to ensure reliable testing in actual products.

[0157] 3. Improve testing efficiency

[0158] Pre-testing: Use Pattern Wafer to pre-test the probe card before the actual product. This allows for rapid evaluation of the probe card's performance by performing high-throughput testing on the pattern wafer.

[0159] Automated testing: Pattern wafer testing is performed using automated testing equipment to reduce human error and increase testing speed. The automated system can quickly change test points and perform data collection and analysis.

[0160] In MEMS probe card testing, the automated control system process for the pattern wafer ensures that the probe card accurately contacts the wafer's test points, providing precise test results. The automated control system's primary task is to perform precise alignment, calibration, and testing processes to improve test efficiency and accuracy. The following details the automated system control process.

[0161] 1. System initialization

[0162] Loading system settings: Before starting a test, the automated system first loads a preset test configuration, including information such as the test type, required probe card type, test point locations, wafer type, etc. These settings can be provided by the operator or by the automation software.

[0163] Hardware inspection: The automated system will perform hardware inspections, including probe cards, positioning devices, visual alignment systems, probe pressure control systems, etc. This ensures that all equipment is in normal working order and detects any faults or deviations.

[0164] System Self-Test: The system performs a self-test procedure to ensure that all sensors, actuators, electrical connections, and automation software are functioning properly.

[0165] 2. Loading and positioning of pattern wafers

[0166] Automatic wafer loading: In automated systems, pattern wafers are loaded onto the test platform using automated robotic arms or conveyor systems. The system precisely positions the wafer according to pre-set target locations, ensuring accurate positioning.

[0167] Vision alignment: After the pattern wafer is placed on the test platform, the automated vision alignment system uses cameras and image processing technology to identify alignment marks on the wafer (such as test points and pad marks). This step helps determine the position and angle of the wafer. The automated system can adjust the wafer position through precise mechanical adjustment devices (such as XY and Z axis motion platforms) to ensure it is aligned with the probe card.

[0168] Wafer position correction: If the vision system detects positioning deviation of the pattern wafer, the automation system will correct the wafer position as needed and reconfirm whether the alignment is accurate.

[0169] 3. Automatic installation and calibration of probe cards

[0170] Automated probe card installation: The automated system controls the probe card installation process, precisely mounting the probe card onto the probe card test platform. At this point, the system controls electric actuators (such as pneumatic systems or electric thrusters) to secure the probe card in place.

[0171] Initial probe position adjustment: The system automatically adjusts the probe card's position based on the pre-set pattern of test points on the wafer, ensuring that each probe contacts the wafer's test points. This initial adjustment can be accomplished using the probe card's X, Y, and Z axis adjustments.

[0172] Vision-guided probe alignment: An automated vision system scans the probe positions to ensure each probe is precisely aligned with the wafer's test point. The vision system detects any deviations between the probe and the test point and makes further adjustments by controlling the probe card's fine-tuning mechanism.

[0173] 4. Automatic adjustment of probe pressure and depth

[0174] Pressure sensor feedback: The automated system monitors the probe's contact pressure in real time to ensure that the probe does not apply excessive or insufficient pressure when contacting the wafer. The probe's pressure sensor provides feedback, allowing the system to automatically adjust pressure based on preset standards.

[0175] Depth Control: The probe card's depth control system ensures the probes maintain the proper contact depth with the wafer surface, avoiding excessive depth that could damage the wafer or shallow contact that could result in poor contact. Depth control is achieved through Z-axis motion and a sophisticated feedback mechanism.

[0176] 5. Automatic calibration of electrical performance

[0177] Electrical calibration: An automated system performs an electrical calibration process, testing standard test points on the pattern wafer to ensure the probe card is transmitting signals correctly. The system checks electrical parameters such as voltage, current, and impedance to ensure the probe card's electrical performance meets standards.

[0178] Signal Transmission Inspection: An automated system uses test equipment such as signal generators and oscilloscopes to check the signal transmission quality between the probe card and the pattern wafer. The system automatically records the signal characteristics of each test point and makes necessary adjustments to the probe card based on the measured data.

[0179] 6. Dynamic probe calibration and performance verification

[0180] Dynamic probe adjustments: During dynamic testing, the automated system simulates the probe card's interaction with the wafer during testing, testing the probe's stability in different positions and states. Through these dynamic adjustments, the system ensures that the probe maintains good contact throughout the test.

[0181] Performance Verification: The system performs comprehensive performance verification to ensure that the probe card can operate stably under different test conditions. This step includes testing the probe's response speed, signal stability, and probe lifespan.

[0182] 7. Testing process and data collection

[0183] Testing begins: Once all calibration and alignment are complete, the automated system begins the actual MEMS chip testing process. During the test, the probe card performs a series of electrical tests such as signal transmission, impedance matching, and power testing through the automated control system.

[0184] Data Acquisition and Analysis: During the test, the automated system collects electrical signals from test points in real time. The data is then transmitted to the control computer for analysis. The system automatically checks whether the signal at each test point meets the preset standards and generates a test report.

[0185] 8. Test completion and report generation

[0186] Test completion signal: When all tests are completed, the automated system will issue a test completion signal, prompting the operator to proceed to the next step. At this time, the probe card will automatically retract and the wafer will be removed.

[0187] Report Generation: The automated system automatically generates a test report containing detailed test results for each test point, electrical parameters, contact conditions, probe card performance data, etc. The report can be used for quality control and failure analysis.

[0188] Data Archiving and Management: Completed test reports and related data are archived by the automated system and backed up in a pre-set format. Operators can query and analyze historical data at any time for quality tracking.

[0189] 9. System Exit and Maintenance

[0190] Automatic system cleanup: After testing is complete, the automated system automatically cleans the test platform and prepares it for the next round of testing. This includes cleaning the probe card, detecting the device status, and clearing any residual data.

[0191] Automatic reporting and equipment status monitoring: The automated system also monitors the health of equipment, including whether probe cards, robotic arms, sensors, and other components require maintenance or replacement. The system can automatically issue maintenance reminders based on real-time monitoring data.

[0192] Summarize

[0193] The automation system's control process for MEMS probe card testing encompasses multiple steps, from pattern wafer loading, probe card installation, position calibration, electrical performance verification, to final test data collection and report generation. Through highly integrated control systems and automated hardware, test accuracy, efficiency, and reliability are significantly improved, while reducing human interference and ensuring consistency and repeatability throughout the test process.

[0194] 4. Probe wear monitoring

[0195] Wear testing: Design wear-resistant test points on the pattern wafer and conduct long-term testing to evaluate the wear of the probe. These test points have known friction characteristics and durability.

[0196] When designing wear-resistant test points on a pattern wafer, the differences between wear-resistant test points and other parts are mainly reflected in structural design, material selection, and processing technology. These differences are described below:

[0197] 1. Differences in structural design

[0198] Thicker metal layer: To improve wear resistance, the metal layer at the wear-resistant test point is thicker. A thicker metal layer provides greater wear resistance because the metal layer can better resist wear during contact and reduce damage caused by friction between the probe and the wafer surface.

[0199] Enhanced contact surface: By changing the contact structure design of the test point, such as increasing the contact area or adopting a specific geometric shape (such as round or square), local pressure is reduced and wear is reduced. Increasing the contact area helps to disperse the pressure of the probe, thereby reducing single-point wear.

[0200] Use a wear-resistant pad: Some designs add a wear-resistant pad to the test point surface to reduce direct friction. These pads may be metal, ceramic or other hard materials, which can significantly improve durability.

[0201] 2. Differences in material selection

[0202] Hard metal materials: For test points that require wear resistance, you can choose metal materials with higher hardness, such as gold (Au), platinum (Pt), tungsten (W), etc. These materials have high wear resistance and chemical stability and can maintain stable performance during long-term use.

[0203] Alloy materials: Alloy materials containing other elements are sometimes used to enhance wear resistance. For example, tungsten-copper alloys and tantalum alloys have excellent wear resistance and corrosion resistance, which can effectively improve the durability of the test point.

[0204] Special coatings: Special coatings (such as diamond film (DLC), titanium nitride (TiN) and other hard coatings) are applied to the surface of the test point. These coatings can not only improve the wear resistance, but also reduce oxidation or corrosion, thereby extending the service life of the test point.

[0205] 3. Differences in processing technology

[0206] Surface treatment: Advanced processes such as laser etching and electroplating are used to treat the test points to improve their wear resistance. These treatments create a smoother, more uniform structure on the test point surface, reducing friction and wear.

[0207] Heat treatment: Heat treatment of the test point material, such as annealing or quenching, can change the material's lattice structure, increase its hardness, and thus improve wear resistance.

[0208] Thin film deposition technology: Physical vapor deposition (PVD) or chemical vapor deposition (CVD) technology is used to deposit a wear-resistant thin film on the surface of the test point. This film not only enhances wear resistance, but also improves corrosion resistance and stability.

[0209] 4. Common design solutions

[0210] Metallization layer reinforcement: Using a thicker metallization layer on the wear-resistant test point, such as a multi-layer electroplating process (such as gold, copper, titanium alloy, etc.), can reduce surface wear during contact.

[0211] Hardening coating: Use hardening coatings such as titanium nitride (TiN). These coatings have extremely high hardness and can effectively reduce physical wear and chemical corrosion.

[0212] Local surface strengthening treatment: Use laser melting or electrochemical deposition methods to strengthen the surface of the test point to increase its surface hardness and enhance its wear resistance.

[0213] Summarize

[0214] Wear-resistant test points differ from other parts primarily through differences in structural design (such as metal layer thickness, contact surface shape, and pad design), material selection (such as hard metals, alloys, and coating materials), and processing techniques (such as surface treatment, heat treatment, and thin film deposition). These differences enable wear-resistant test points to better withstand the wear caused by repeated contact between the probe and the wafer surface, extending the test point's service life while maintaining high-precision test performance.

[0215] Performance tracking: Regularly record the test results of the probe card, analyze the contact resistance and other electrical performance indicators of the probes, and identify potential wear issues.

[0216] Maintenance plan: Develop maintenance and replacement plans based on wear monitoring results to ensure the performance stability of the probe card during use.

[0217] 5. Electrical performance verification

[0218] Electrical testing: The pattern wafer is integrated with standardized electrical characteristic test points, such as resistance, capacitance, and voltage source. By applying known signals to these test points, the electrical performance of the probe card can be verified.

[0219] Signal integrity analysis: Use oscilloscopes and other electronic test equipment to analyze the probe card's ability to transmit and receive signals during testing to ensure signal integrity.

[0220] Data comparison: Compare the measurement results with the expected electrical characteristics to verify that the probe card can accurately measure and transmit signals.

[0221] 6. Manufacturing defect detection

[0222] Defect Detection: Probe card manufacturing defect detection is performed on the pattern wafer, including probe short circuits, disconnections, or poor contact. Defect detection is performed using a high-resolution microscope or automated inspection system.

[0223] Corrective measures: After a defect is discovered, necessary corrections or reprocessing are performed, such as adjusting the probe position, repairing the probe contact point, or replacing a damaged probe.

[0224] Quality Control: Implement a strict quality control process to ensure that the probe card meets the specification requirements during the pattern wafer testing phase, preventing defective products from entering the actual testing phase.

[0225] These technical solutions effectively solve various technical problems in MEMS probe card testing and improve test accuracy and efficiency by comprehensively applying standardized test points, automated equipment, image processing and electrical testing technologies.

[0226] Applying Pattern Wafer technology in MEMS probe card testing can bring the following outstanding technical effects.

[0227] 1. Improve test accuracy

[0228] Standardized test points: The standardized test points designed on the Pattern Wafer provide precise calibration benchmarks, helping to improve the accuracy of probe card alignment. Standardized test points ensure consistency and repeatability of each test, thereby improving the accuracy of test results.

[0229] Accurate calibration: By calibrating the probe card on the Pattern Wafer, the position and response of the probe can be precisely adjusted, reducing measurement errors caused by probe position deviation.

[0230] 2. Speed ​​up testing

[0231] Automated testing: Pattern wafer applications support efficient automated testing processes. Automated equipment can quickly change test points and collect data, significantly increasing test speed and reducing test time compared to manual testing.

[0232] Pre-testing: Using Pattern Wafer for pre-testing before actual product testing can quickly identify probe card problems, avoiding delays caused by problems discovered during the production process.

[0233] 3. Reduce costs

[0234] Reduced trial costs: Early calibration and testing on pattern wafers can reduce the failure rate and debugging time in actual product testing, thereby reducing test costs.

[0235] Extending probe life: The use of Pattern Wafer helps monitor probe wear and optimize probe usage and maintenance plans, thereby extending the service life of the probe and reducing the frequency and cost of probe replacement.

[0236] 4. Optimize test design

[0237] Test point layout optimization: The test point layout on the pattern wafer has been optimized to better match the test requirements of actual products, ensuring that the probe card can cover all areas that need to be tested and improving test coverage.

[0238] Electrical performance verification: The electrical performance test points on the pattern wafer can effectively verify the electrical performance of the probe card, including signal integrity and transmission characteristics, to ensure the stability and reliability of the probe card in actual testing.

[0239] 5. Improve test reliability

[0240] Manufacturing defect detection: Pattern Wafer supports the detection of manufacturing defects in probe cards, including short circuits, open circuits, and poor contacts. Timely detection and correction of these defects improves the overall reliability of the probe card.

[0241] Performance tracking: By using pattern wafers for long-term probe card performance tracking and wear monitoring, potential performance issues can be identified in advance, ensuring the stability of the probe card throughout the test process.

[0242] 6.Support various testing requirements

[0243] Compatibility: Pattern Wafer can be designed to adapt to the testing requirements of different types of MEMS devices, supporting various test schemes and test point configurations, enhancing the versatility and flexibility of the probe card.

[0244] Diversity of test points: Pattern Wafer can integrate a variety of test points, including resistors, capacitors, pads, etc., to support comprehensive electrical testing needs and meet the requirements of different test scenarios.

[0245] Overall, the application of Pattern Wafer technology in MEMS probe card testing has significantly improved the accuracy, efficiency and economy of testing through precise calibration, automated testing, cost control and reliability improvement.

[0246] In MEMS probe card testing, this application includes the following key aspects of Pattern Wafer technology.

[0247] 1.Pattern Wafer Design

[0248] Test point layout: covers the specific layout and configuration of test points on the pattern wafer. This includes how to optimize the location of test points for optimal probe alignment and test accuracy.

[0249] Test point functionality: This involves the design of different types of test points, such as resistance, capacitance, short circuit or open circuit test points, and how to implement these functions.

[0250] 2. Manufacturing process

[0251] Pattern Wafer Manufacturing Method: Covers the process of manufacturing Pattern Wafer, including material selection, pattern transfer technology, photolithography process and other manufacturing steps.

[0252] Precision control: How to control the accuracy and consistency of test points during the manufacturing process to ensure high-quality pattern wafers.

[0253] 3. Probe card calibration

[0254] Calibration method: This includes the specific methods and steps for calibrating the probe card using the pattern wafer. This involves how to precisely adjust the position of the probe using the pattern wafer to ensure measurement accuracy.

[0255] Automated calibration system: involves the use of automated systems or equipment to perform probe card calibration on pattern wafers, as well as calibration-related software algorithms.

[0256] 4. Test data processing

[0257] Data Analysis Techniques: Includes techniques for acquiring and analyzing data from pattern wafer testing. This covers how to process test data to detect probe card performance and issues.

[0258] Fault diagnosis: involves the technical methods of using Pattern Wafer test data to perform probe card fault diagnosis and performance optimization.

[0259] 5. Probe life management

[0260] Wear monitoring: involves using pattern wafers to monitor probe wear, prevent probe failure, and extend its service life.

[0261] Maintenance Optimization: How to use Pattern Wafer data to optimize probe card maintenance and servicing plans.

[0262] 6. Multifunctional testing

[0263] Compatibility: Pattern Wafer is designed with versatility and compatibility to support the testing requirements of different types of MEMS devices.

[0264] Test point integration: involves the technical solution of how to integrate multiple test points on the pattern wafer to meet different electrical testing requirements.

[0265] 7. Performance Improvement

[0266] Test coverage: How to optimize the design of pattern wafers to improve test coverage and overall probe card performance.

[0267] Performance Verification Method: involves methods and techniques for verifying the performance of test points on the Pattern Wafer to ensure the reliability and stability of the probe card.

[0268] Figure 4 A schematic structural diagram of a MEMS probe card detection device provided in one embodiment of the present application is shown in FIG. Figure 4 As shown, the MEMS probe card detection device 400 of this embodiment includes: a parameter loading module 401 , a probe card fixing module 402 , a pattern wafer placement module 403 , an alignment module 404 , a calibration module 405 , and a testing module 406 .

[0269] The parameter loading module 401 is used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type, and test point location;

[0270] The probe card fixing module 402 is used to fix the MEMS probe card to be tested on the probe seat of the test equipment;

[0271] The pattern wafer placement module 403 is used to place a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on the test platform of the test equipment; the MEMS pattern wafer includes the same test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network;

[0272] An alignment module 404 is used to start a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer;

[0273] A calibration module 405 is used to calibrate the MEMS probe card to be tested;

[0274] The testing module 406 is used to perform the MEMS wafer testing task and to detect the MEMS probe card.

[0275] Optionally, the calibration module 405 is specifically used to calibrate the MEMS probe card to be tested by calibration tasks using calibration test points as contact points; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration, and dynamic calibration.

[0276] Optionally, the test module 406 is specifically used to execute corresponding test tasks for each model of MEMS wafer to be tested and to detect the corresponding MEMS probe card to be tested; after completing the detection, the MEMS probe card to be tested corresponding to another model of MEMS wafer to be tested is replaced for detection until the test target is completed.

[0277] Optionally, the alignment module 404 is specifically used to start the visual alignment system, scan the MEMS pattern wafer, and identify the position of the marking point; based on the position of the marking point, the position of the MEMS probe card to be tested is coarsely adjusted; a contact test is performed, and the position of the MEMS probe card to be tested is finely adjusted according to the test results to align it with the MEMS pattern wafer.

[0278] Optionally, a calibration module 405 is specifically configured to adjust the pressure based on the pressure sensor data so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard;

[0279] Acquire a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjust the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard;

[0280] The MEMS probe card to be tested outputs an electrical signal of corresponding parameters, and probes are adjusted based on signal data of test points on the MEMS pattern wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard;

[0281] Based on the test task of the MEMS probe card to be tested, the MEMS probe card is moved to test whether the signal stability meets the preset standard.

[0282] The device of this embodiment can be used to execute the method of any of the above embodiments. Its implementation principles and technical effects are similar and will not be described in detail here.

[0283] Figure 5 A schematic diagram of the structure of an electronic device provided in one embodiment of the present application is shown in FIG. Figure 5 As shown, the electronic device 500 of this embodiment may include: a memory 501 and a processor 502.

[0284] The memory 501 stores a computer program that can be loaded by the processor 502 and execute the method in the above embodiment.

[0285] The processor 502 and the memory 501 are connected, for example, via a bus.

[0286] Optionally, the electronic device 500 may further include a transceiver. It should be noted that in actual applications, the number of transceivers is not limited to one, and the structure of the electronic device 500 does not constitute a limitation on the embodiments of the present application.

[0287] Processor 502 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It may implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the present disclosure. Processor 502 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, or a combination of a DSP and a microprocessor.

[0288] A bus includes a path that transmits information between the components mentioned above. Examples include a PCI (Peripheral Component Interconnect) bus and an EISA (Extended Industry Standard Architecture) bus. Buses can be categorized as address buses, data buses, and control buses. For ease of illustration, the diagram uses a single thick line, but this does not imply a single bus or type of bus.

[0289] The memory 501 may be a ROM (Read Only Memory) or other type of static storage device that can store static information and instructions, a RAM (Random Access Memory) or other type of dynamic storage device that can store information and instructions, or an EEPROM (Electrically Erasable Programmable Read Only Memory), a CD-ROM (Compact Disc Read Only Memory) or other optical disk storage, optical disk storage (including compact discs, laser discs, optical discs, digital versatile discs, Blu-ray discs, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0290] The memory 501 is used to store application code for executing the solution of the present application, and the execution is controlled by the processor 502. The processor 502 is used to execute the application code stored in the memory 501 to implement the content shown in the above method embodiment.

[0291] Electronic devices include, but are not limited to, mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), and in-vehicle terminals (e.g., in-vehicle navigation terminals), as well as fixed terminals such as digital TVs and desktop computers. They may also include servers, etc. Figure 5 The electronic device shown is merely an example and should not limit the functions and scope of use of the embodiments of the present application.

[0292] The electronic device of this embodiment can be used to execute the method of any of the above embodiments. Its implementation principles and technical effects are similar and will not be described in detail here.

[0293] The present application also provides a computer-readable storage medium storing a computer program that can be loaded by a processor and execute the method in the above embodiment.

[0294] Those skilled in the art will appreciate that all or part of the steps in the above-described method embodiments can be implemented using hardware associated with program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments. The aforementioned storage medium includes various media capable of storing program code, such as ROM, RAM, magnetic disks, or optical disks.

Claims

1. A MEMS probe card detection method, characterized in that: Applied to MEMS wafer detection equipment, the method includes: Loading test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type and test point location; Fixing the MEMS probe card to be tested on a probe holder of a testing device; Placing a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes the same geometric shape, electrical characteristics, and test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, wherein the test points include standard pads, standard contact points, and a standard resistor network; Starting a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; calibrating the MEMS probe card to be tested; Based on the test configuration parameters, a test task for the MEMS wafer to be tested is generated; the test task for the MEMS wafer to be tested is executed, the MEMS probe card to be tested is tested, an actual test value is determined, and the actual test value is compared with the signal prediction value to determine whether the performance of the MEMS probe card to be tested meets the standard; Wherein, the MEMS model wafer includes a plurality of grains, each grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged identically, and each row of contacts has the same contact arrangement as the corresponding positions of the same model of the MEMS wafer to be tested, wherein one row of contacts is a calibration test point; the calibration of the MEMS probe card to be tested includes: using the calibration test points as contact points, and calibrating the MEMS probe card to be tested through a calibration task; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration and dynamic calibration; the dynamic calibration includes simulating the wafer test process and dynamically testing the stability of the probe in different positions and states; or, The MEMS model wafer includes several grains, each grain includes multiple contact arrays, each contact array includes multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is respectively the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested; the execution of the test task of the MEMS wafer to be tested and the detection of the MEMS probe card to be tested include: for each model of MEMS wafer to be tested, executing the corresponding test task and detecting the corresponding MEMS probe card to be tested; after completing the detection, replacing the MEMS probe card to be tested corresponding to another model of MEMS wafer to be tested for detection until the test target is completed.

2. The method according to claim 1, characterized in that The MEMS pattern wafer further includes marking points, and starting the visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer includes: Starting a visual alignment system to scan the MEMS pattern wafer and identify the position of the marking point; Based on the position of the marking point, coarsely adjusting the position of the MEMS probe card to be tested; A contact test is performed, and the position of the MEMS probe card to be tested is fine-tuned according to the test result to align it with the MEMS pattern wafer.

3. The method according to claim 1, characterized in that The calibrating the MEMS probe card to be tested includes: Based on the pressure sensor data, pressure adjustment is performed so that the pressure of each probe in the MEMS probe card to be tested meets a preset standard; Acquiring a grayscale image of the probe tip position in the MEMS probe card to be tested, and adjusting the probe depth based on the grayscale image so that the depth of each probe in the MEMS probe card to be tested meets a preset standard; Outputting electrical signals of corresponding parameters through the MEMS probe card to be tested, and performing probe adjustment based on signal data of test points on the MEMS pattern wafer that are in contact with the MEMS probe card to be tested, so that the output signal of each probe in the MEMS probe card to be tested meets a preset standard; Based on the test task of the MEMS probe card to be tested, a movement test is performed on the MEMS probe card to detect whether the signal stability meets the preset standard.

4. A MEMS pattern wafer, characterized in that: Used to perform MEMS probe card testing in conjunction with the method according to any one of claims 1 to 3; the MEMS pattern wafer comprises: an array of test points identical to the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, the test points comprising standard pads, standard contact points, and a standard resistor network; The MEMS model wafer includes a plurality of dies, each of which includes a plurality of contact arrays, each of which includes a plurality of rows of contacts arranged identically, and each row of contacts has the same arrangement as the contacts at corresponding positions on a MEMS wafer to be tested of the same model; one row of contacts is used as test points for calibration; or, The MEMS model wafer includes several grains, each grain contains multiple contact arrays, each contact array contains multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested.

5. The MEMS pattern wafer according to claim 4, characterized in that: The test point array also includes wear-resistant test points, the main material of the wear-resistant test points is heat-treated, and the surface of the wear-resistant test points is coated with a hard coating; the hard coating includes a diamond film and / or titanium nitride.

6. A MEMS probe card detection device, characterized in that: include: A parameter loading module is used to load the test configuration parameters of the MEMS probe card to be tested; the test configuration parameters include test type, probe card type, wafer type and test point location; A probe card fixing module, used for fixing the MEMS probe card to be tested on a probe seat of a testing device; A pattern wafer placement module is used to place a MEMS pattern wafer that matches the MEMS probe card to be tested at a preset target position on a test platform of a test device; the MEMS pattern wafer includes the same geometric shape, electrical characteristics, and test point array as the MEMS wafer to be tested corresponding to the MEMS probe card to be tested, and the test points include standard pads, standard contact points, and a standard resistor network; an alignment module, configured to activate a visual alignment system to align the MEMS probe card to be tested with the MEMS pattern wafer; A calibration module, used for calibrating the MEMS probe card to be tested; A test module is configured to generate a test task for the MEMS wafer to be tested based on the test configuration parameters; execute the test task for the MEMS wafer to be tested, test the MEMS probe card to be tested, determine an actual test value, compare the actual test value with the signal prediction value, and determine whether the performance of the MEMS probe card to be tested meets the standard; Wherein, the MEMS model wafer includes a plurality of grains, each grain includes a plurality of contact arrays, each contact array includes a plurality of rows of contacts arranged identically, and each row of contacts has the same contact arrangement as the corresponding positions of the same model of the MEMS wafer to be tested, wherein one row of contacts is a calibration test point; the calibration of the MEMS probe card to be tested includes: using the calibration test points as contact points, and calibrating the MEMS probe card to be tested through a calibration task; the calibration tasks include pressure calibration, depth calibration, electrical performance calibration and dynamic calibration; the dynamic calibration includes simulating the wafer test process and dynamically testing the stability of the probe in different positions and states; or, The MEMS model wafer includes several grains, each grain includes multiple contact arrays, each contact array includes multiple rows of contacts, the arrangement of at least one row of contacts is different from that of other rows, and each row of contacts is respectively the same as the contact arrangement of corresponding positions of at least two different models of MEMS wafers to be tested; the execution of the test task of the MEMS wafer to be tested and the detection of the MEMS probe card to be tested include: for each model of MEMS wafer to be tested, executing the corresponding test task and detecting the corresponding MEMS probe card to be tested; after completing the detection, replacing the MEMS probe card to be tested corresponding to another model of MEMS wafer to be tested for detection until the test target is completed.

7. A MEMS probe card detection device, characterized in that: include: memory and processor; The memory is used to store program instructions; The processor is configured to call and execute program instructions in the memory to perform the method according to any one of claims 1 to 3.

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