High power thin film resistor and method of manufacturing the same

Abstract

A high power thin film resistor includes a substrate, a resistor layer, an inner electrode layer, a passivation layer and a heat conducting layer. The resistor layer is disposed above the substrate, wherein the inner electrode layer has a middle electrode region and two end electrode regions; the inner electrode layer is disposed above the resistor layer, wherein the inner electrode layer has a middle inner electrode region and two end inner electrode regions, dividing the resistor layer into the middle electrode region and the two end electrode regions; the passivation layer covers part of the resistor layer and the inner electrode layer; and the heat conducting layer is disposed above the passivation layer, wherein the heat conducting layer has two heat conducting bodies and a gap between the two heat conducting bodies, and the two heat conducting bodies respectively contact the two end inner electrode regions of the inner electrode layer. The middle electrode region and the two end electrode regions form a series resistor, and the two end electrode regions have the same resistance. In this way, the heat generated by the resistor layer can be evenly distributed throughout the high power thin film resistor, and most of the heat can be directly conducted to the external circuit by the two end inner electrode regions of the inner electrode layer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a resistor and a manufacturing method thereof, and particularly to a high power thin film resistor and a manufacturing method thereof. BACKGROUND

[0002] A high power thin film resistor in the prior art is sputtered with an alloy resistor film on a substrate, and a pair of internal electrodes is formed by printing or plating at both ends, followed by covering a portion of the alloy resistor film and the internal electrode with an insulating protective layer to avoid the alloy resistor film from being contaminated or damaged by the environment. Finally, a pair of external electrodes for soldering is formed by plating.

[0003] However, the aluminum nitride substrate or the passivated aluminum substrate used in the high power thin film resistor has a problem of being difficult to adhere to other alloy metal materials due to the surface tension of the material, causing the alloy resistor film to separate from the substrate. In particular, when the power or temperature is increased, the alloy resistor film is more likely to peel off due to thermal expansion and contraction. SUMMARY

[0004] Therefore, the purpose of the present disclosure is to provide a high power thin film resistor, comprising: a substrate, a resistor layer, an internal electrode layer, a passivation layer, and a heat conduction layer. The resistor layer is disposed above the substrate, wherein the internal electrode layer has a middle resistance region and two end resistance regions; the internal electrode layer is disposed above the resistor layer, wherein the internal electrode layer has a middle internal electrode region and two end internal electrode regions, dividing the resistor layer into the middle resistance region and the two end resistance regions; the passivation layer covers a portion of the resistor layer and the internal electrode layer; and the heat conduction layer is disposed above the passivation layer, wherein the heat conduction layer has two heat conductors and a gap between the two heat conductors, and the two heat conductors respectively contact the two end internal electrode regions of the internal electrode layer; wherein the middle resistance region and the two end resistance regions form a series resistance, and the two end resistance regions have the same resistance value.

[0005] According to an embodiment of the present disclosure, wherein the middle resistance region and the two end resistance regions each include a trimming region, wherein the trimming region is below the area covered by the two heat conductors of the heat conduction layer.

[0006] According to an embodiment of the present disclosure, wherein it further comprises: a backside internal electrode layer disposed on the other side of the substrate relative to the resistor layer.

[0007] According to an embodiment of the present disclosure, wherein it further comprises: two connecting layers disposed on both sides of the substrate, connecting the backside internal electrode layer, the internal electrode layer, and the heat conduction layer on both sides.

[0008] According to an embodiment of the present disclosure, wherein it further comprises two external electrode layers with external electrode heat conduction layers, the two external electrode layers respectively covering the corresponding sidewalls of the heat conduction layer and the internal electrode layer.

[0009] According to an embodiment of the present disclosure, each of the two side resistance regions is a double-bent pattern, and the double-bent pattern surrounds a corresponding one of the two end inner electrode regions.

[0010] Another object of the present disclosure is to provide a method for manufacturing a high-power thin film resistor, comprising: depositing a resistance layer over a substrate; forming a patterned photoresist layer over the resistance layer; forming an inner electrode layer over the patterned photoresist layer; removing the patterned photoresist layer to form the inner electrode layer into a middle inner electrode region and two end inner electrode regions, and to expose a middle resistance region and two end resistance regions of the underlying resistance layer, wherein the middle resistance region and the two end resistance regions form a series resistance, and the two end resistance regions have the same resistance value; forming a passivation layer over part of the resistance layer and the inner electrode layer; and forming a thermal conductive layer over the passivation layer, wherein the thermal conductive layer is formed with two thermal conductors and a gap between the two thermal conductors, and the two thermal conductors respectively contact the two end inner electrode regions of the inner electrode layer.

[0011] According to an embodiment of the present disclosure, further comprising: forming a trimming region in each of the middle resistance region and the two end resistance regions, wherein the trimming region is below an area covered by the two thermal conductors of the thermal conductive layer.

[0012] According to an embodiment of the present disclosure, further comprising forming a backside inner electrode layer on another side of the substrate opposite to the side of the resistance layer.

[0013] According to an embodiment of the present disclosure, further comprising forming two outer electrode layers, wherein the two outer electrode layers have an outer electrode thermal conductive layer, and the two outer electrode layers respectively cover corresponding sidewalls of the thermal conductive layer and the inner electrode layer. BRIEF DESCRIPTION OF DRAWINGS

[0014] In order to make the above and other objects, features, advantages and embodiments of the present disclosure more comprehensible, the following description of the accompanying drawings is given:

[0015] FIG. 1A and FIG. 1B A bottom view of a cross-sectional view of layers of a high-power thin film resistor according to some embodiments of the present disclosure, and a cross-sectional view of the high-power thin film resistor taken along line A-A’ shown in FIG. 1B; FIG. 1A A bottom view of a cross-sectional view of layers of a high-power thin film resistor according to some embodiments of the present disclosure, and a cross-sectional view of the high-power thin film resistor taken along line A-A’ shown in FIG. 1B;

[0016] FIG. 2A A top view of a resistance layer and an inner electrode layer of a high-power thin film resistor according to some embodiments of the present disclosure;

[0017] FIG. 2B An equivalent resistance view of a resistance layer of a high-power thin film resistor according to some embodiments of the present disclosure;

[0018] FIG. 3This is a top perspective view of the thermally conductive layer and the resistive layer of a high-power thin-film resistor according to some embodiments of the present invention;

[0019] FIG. 4 A flowchart illustrating a method for manufacturing a high-power thin-film resistor according to some embodiments of the present invention; and

[0020] FIG. 5A to FIG. 5M Drawing through FIG. 4 Cross-sectional schematic diagrams of high-power thin-film resistors manufactured using the above manufacturing method at various manufacturing stages. Detailed Implementation

[0021] The following disclosure provides numerous different embodiments or examples for implementing various features of the provided subject matter. The embodiments of components and configurations described below are merely examples and are not intended to be limiting. For example, in the following description, a first feature is formed on or above a second feature, which may include embodiments where the first and second features are in direct contact, and may also include embodiments where an additional feature is formed between the first and second features such that the first and second features are not in direct contact. Furthermore, for simplicity and clarity, reference numerals and / or designations are repeated in various examples in this disclosure, and do not in themselves limit the relationships between the various embodiments and / or components discussed.

[0022] Secondly, to clearly present the technical features of this application, the dimensions (e.g., length, width, thickness, and depth) of the elements (e.g., layers, films, substrates, and regions) in the accompanying drawings are not drawn to scale. Therefore, the description and explanation of the embodiments below are not limited to the dimensions and shapes presented by the elements in the drawings, but should cover dimensions, shapes, and deviations from both due to actual manufacturing processes and / or tolerances. For example, a flat surface shown in the drawings may have rough and / or non-linear characteristics, and an acute angle shown in the drawings may be rounded. Therefore, the elements presented in the accompanying drawings are primarily for illustrative purposes and are not intended to precisely depict the actual shape of the elements, nor are they intended to limit the claims of this application.

[0023] Please refer to FIG. 1A and FIG. 1B , FIG. 1A and FIG. 1B A bottom view of the stacked layers of a high-power thin-film resistor 100 as illustrated in some embodiments of the present invention, and along... FIG. 1A The diagram shows a cross-sectional view of a high-power thin-film resistor 100 obtained by following line A-A'. The high-power thin-film resistor 100 includes a substrate 110, a resistive layer 120, an inner electrode layer 130, a passivation layer 140, a thermally conductive layer 150, a back-side inner electrode layer 160, multiple protective layers 170 (e.g., a first protective layer 170a and a second protective layer 170b), two connecting layers 180, and two external electrodes 190.

[0024] As shown in FIG. 1, the high power thin film resistor 100 includes a substrate 110, a resistance layer 120, an inner electrode layer 130, a passivation layer 140, a thermal conductive layer 150, a backside inner electrode layer 160, a protective layer 170, and two connecting layers 180. The two connecting layers 180 are respectively connected to the corresponding sidewalls of the substrate 110, the resistance layer 120, the inner electrode layer 130, the thermal conductive layer 150, and the backside inner electrode layer 160. Two external electrodes 190 are respectively connected to the two connecting layers 180. FIG. 1B As shown in FIG. 1, the resistance layer 120 is disposed above the substrate 110, the inner electrode layer 130 is disposed above the resistance layer 120, and includes two end inner electrode regions 130a, 130d and middle inner electrode regions 130b, 130c. The passivation layer 140 covers part of the resistance layer 120 and the inner electrode layer 130. The thermal conductive layer 150 is disposed above the passivation layer 140 and contacts the two end inner electrode regions 130a, 130d of the inner electrode layer 130. Thus, the heat generated by the high power thin film resistor 100 can be directly conducted from the two end inner electrode regions 130a, 130d of the inner electrode layer 130 to the thermal conductive layer 150, and then conducted from the thermal conductive layer 150 to the connecting layers 180, the external electrodes 190, and the external circuit or printed circuit board. In addition, part of the surface of the thermal conductive layer 150 and the backside inner electrode layer 160 is covered by the protective layer 170. Finally, the two external electrodes 190 are connected to the outermost layers.

[0025] The material of the substrate 110 can be alumina, aluminum nitride, FR-4, polyimide (PI), silicon dioxide (SiO2), etc., and the present application is not limited thereto.

[0026] The resistance layer 120 can be adjusted in resistance value by laser trimming or physical processing, thereby obtaining a target resistance value. In the present embodiment, the material of the resistance layer 120 can be manganese-copper alloy (MnCu), copper-nickel alloy (CuNi), copper-manganese-nickel alloy (CuMnNi), copper-manganese-tin alloy (CuMnSn), nickel-chromium-aluminum alloy (NiCrAl), nickel-chromium-aluminum-silicon alloy (NiCrAlSi), iron-chromium-aluminum alloy (FeCrAl), or other metal alloys, and the present application is not limited thereto.

[0027] The passivation layer 140 can convert the metal surface into a state that is not easy to oxidize, thereby delaying the corrosion rate of the metal and achieving the effect of protecting the resistance layer 120 and the inner electrode layer 130 below. The material of the passivation layer 140 can be one or more layers of silicon dioxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), tantalum oxide (Ta2O), or other insulating oxides, and the present application is not limited thereto.

[0028] The heat conducting layer 150 has two heat conducting bodies 150a and 150b, and a gap 150c between the heat conducting bodies 150a and 150b, so that the heat conducting bodies 150a and 150b do not contact each other (i.e. open circuit, not providing a conductive path). The heat conducting layer 150 is composed of a metal material (e.g. copper or aluminum) with high heat conducting property, so that the heat generated by the resistance layer 120 can be conducted out more quickly, improving the power tolerance of the high power thin film resistor 100.

[0029] The protective layer 170 can prevent the heat conducting layer 150 and the back inner electrode layer 160 from being contaminated or oxidized, and achieve the effect of insulation protection. The material of the protective layer 170 includes but is not limited to epoxy resin, polyimide, acrylic resin or other insulating materials. In this embodiment, the first protective layer 170a covers the passivation layer 140 and part of the upper surface of the heat conducting layer 150. The second protective layer 170b covers part of the surface of the substrate 110 and the back inner electrode layer 160.

[0030] The two connecting layers 180 respectively connect the corresponding side walls of the substrate 110, the resistance layer 120, the inner electrode layer 130, the heat conducting layer 150 and the back inner electrode layer 160 on both sides. The two external electrodes 190 extend from the surface of the first protective layer 170a to the surface of the second protective layer 170b to cover the two side edges of these layers. The structure of the external electrode 190 includes a copper metal layer 151, a nickel metal layer and a tin metal layer formed in sequence by electroplating process. The copper metal layer 151 serves as another heat conducting layer, which can improve the heat conducting rate of the high power thin film resistor 100. The outermost tin metal layer provides the function of soldering adhesion between the high power thin film resistor 100 and the external circuit board.

[0031] In FIG. 2A In this embodiment, the top view of the resistance layer 120 and the inner electrode layer 130 of the high power thin film resistor 100 according to some embodiments of the present application is further shown. The inner electrode layer 130 includes two end inner electrode regions 130a, 130d and middle inner electrode regions 130b, 130c, which divide the underlying resistance layer 120 into two end resistance regions 120a, 120c close to the two end inner electrode regions 130a, 130d and a middle resistance region 120b. The two end resistance regions 120a, 120c and the middle resistance region 120b of the resistance layer 120 each include at least one trimming region 121 for adjusting the resistance value to obtain the target resistance value of each resistance region. In this embodiment, the two end resistance regions 120a, 120c are designed as double-bent patterns, and the middle resistance region 120b is designed as a diagonal pattern, so that the width of the cross-sectional area in the resistance formula is increased, thereby achieving a lower target resistance value.

[0032] In preferred embodiments of the present application, the substrate length L of the high power thin film resistor 100 is defined, wherein the length L1 of the inner electrode region is less than the length L2, and the length L2 is less than 1 / 4L; the length L3 is between 1 / 4L and 1 / 3L; and the length L4 is between 1 / 2L and 3 / 5L. The width W of the high power thin film resistor 100 is defined, wherein the width W1 is between 4 / 5W and 9 / 10W; the width W2 is between 3 / 5W and 3 / 4W; the width W3 is the width of the two end inner electrode regions 130a and 130d, and is between 1 / 3W and 1 / 2W; and the width W4 is between 1 / 2W1 and 3 / 4W1.

[0033] In FIG. 2B , the equivalent resistance diagram of the resistance layer 120 of the high power thin film resistor 100 according to some embodiments of the present application is further illustrated. The total resistance value R of the high power thin film resistor 100 T may be equivalent to the resistance values of the two end resistance regions 120a, 120c and the middle resistance region 120b in series. In embodiments of the present application, the resistance value of the two end resistance region 120a is R1, the resistance value of the middle resistance region 120b is R2, and the resistance value of the two end resistance region 120c is R3, and wherein the resistance value R1 of the two end resistance region 120a is equal to the resistance value R3 of the two end resistance region 120c, so that the heat generated by the resistance layer 120 can be evenly distributed throughout the high power thin film resistor 100, and more than 50% of the heat can be directly conducted to the external circuit by the two end inner electrode regions 130a, 130d of the inner electrode layer 130. In some preferred embodiments, the design range of the resistance values R1, R2 and R3 is 1 / 4R≤R1=R3≤1 / 3R.

[0034] In FIG. 3The diagram further illustrates a top perspective view of the thermally conductive layer 150 and the resistive layer 120 of a high-power thin-film resistor 100 according to some embodiments of the present invention. The thermally conductive layer 150 is disposed above the side of the resistive layer 120 having the correction region 121, and the correction regions 121 of the two end resistive regions 120a and 120c and the middle resistive region 120b of the resistive layer 120 are all located below the area of ​​the thermally conductive layer 150. Since the correction region 121 is usually a heat concentration area, placing the correction region 121 below the area of ​​the thermally conductive layer 150 is beneficial to the overall heat dissipation of the high-power thin-film resistor 100, so that the heat generated by the correction region 121 can be directly conducted to the thermally conductive layer 150 through the passivation layer 140, and then conducted to the external circuit via the thermally conductive layer 150. In an embodiment of the present invention, the high-power thin-film resistor 100 has a width of W and a substrate length of L. The thermally conductive layer 150 has a width of W5 and a length of L6. The width W5 is between 4 / 5W and 9 / 10W, and the length L6 is between 1 / 3L and 9 / 10W. It covers the modification region 121 of the two end resistance regions 120a and 120c and the middle resistance region 120b of the resistor layer 120.

[0035] Please refer to FIG. 4 , FIG. 4 A schematic flow diagram of a method 200 for manufacturing a high-power thin-film resistor according to an embodiment of the present invention. The manufacturing method 200 can be achieved through... FIG. 1B This can be achieved using the high-power thin-film resistor 100 shown, or through a similar architecture capable of performing similar functions. In the following text, FIG. 4 Manufacturing method 200 combined FIG. 1B High power thin film resistors 100 and FIG. 5A to FIG. 5M To explain, among which FIG. 5A to FIG. 5M Drawing through FIG. 4 Cross-sectional schematic diagram of the high-power thin-film resistor 100 manufactured by manufacturing method 200 at various manufacturing stages.

[0036] It should be understood that manufacturing method 200 is a non-limiting example. Although this document only briefly describes some operations, in fact... FIG. 4 Other additional operations may be included before, during, or after the manufacturing method 200. Furthermore, the order of operations provided by the manufacturing method 200 is not intended to be restrictive; in fact, some operations may be performed in a different order, and some additional operations may be appropriately modified.

[0037] Manufacturing method 200 includes steps 201 to 206. Please refer to... FIG. 4 , FIG. 5A and FIG. 5B (Corresponding to step 201), firstly, a substrate 110 is provided, and a resistive layer 120 is deposited on the substrate 110 by sputtering.

[0038] Referring to FIG. 4 and FIG. 5C (Step 202), a patterned and removable anti-plating layer 301' is formed on the resistive layer 120 by printing or photolithography. The patterned anti-plating layer 301' can be a photoresist layer, a removable film or ink, etc. The present application is not limited thereto.

[0039] Referring to FIG. 4 , FIG. 5D and FIG. 5E (Steps 203 and 204), a plating layer 130' is formed on the resistive layer 120 by plating. The material of the plating layer 130' is, for example, copper. The patterned anti-plating layer 301' (patterned photoresist layer) is then removed by using a film-removing solvent or water washing, so that the plating layer 130' is formed as an internal electrode layer 130 having two end internal electrode regions 130a, 130d and a middle internal electrode region 130b, 130c. The resistive layer 120 is exposed under the removed patterned anti-plating layer 301', so that the resistive layer 120 has two end resistive regions 120a, 120c near the two end internal electrode regions 130a, 130d and a middle resistive region 120b.

[0040] Referring to FIG. 5F , laser trimming or physical processing is then performed on the two end resistive regions 120a, 120c and the middle resistive region 120b to obtain the desired target resistance in the trimming region 121 (the resistance of the two end resistive regions 120a is R1, the resistance of the middle resistive region 120b is R2, and the resistance of the two end resistive regions 120c is R3). As shown, the trimming process cuts the two end resistive regions 120a, 120c and the middle resistive region 120b and forms a plurality of grooves (i.e., the trimming region 121) thereon.

[0041] Referring to FIG. 5G , a patterned and removable photoresist 302' is formed on the two end internal electrode regions 130a and 130d by printing or photolithography. The patterned photoresist 302' can be a removable film or ink, etc. The present application is not limited thereto.

[0042] Referring to FIG. 4 and FIG. 5H (Step 205), a passivation layer 140 is first deposited on the resistive layer 120 and the internal electrode layer 130 by sputtering or chemical vapor deposition (CVD). The patterned photoresist 302' is then removed by using a film-removing solvent or water washing, so that the two end internal electrode regions 130a and 130b are exposed.

[0043] Referring toFIG. 5I Then, a layer of I-shaped and removable patterned photoresist 303' is formed on the passivation layer 140 by printing or photolithography, which can also be a removable film or ink, and the present application is not limited thereto.

[0044] Please refer to FIG. 4 , FIG. 5J and FIG. 5K (corresponding to step 206), then a layer or multiple layers of copper 150' is sputtered on the passivation layer 140 and the patterned photoresist 303' by sputtering. Then, the patterned photoresist 303' is removed by using a film-removing solvent or water washing, so that the copper layer 150' is formed as a heat-conducting layer 150.

[0045] Please refer to FIG. 5L , then a first protective layer 170a is formed on part of the upper surface of the heat-conducting layer 150 by printing, film pressing or photolithography.

[0046] Please refer to FIG. 5M , then a backside inner electrode layer 160 and a second protective layer 170b are formed on the back side of the substrate 110 in a similar manner to the formation of the inner electrode layer 130 and the first protective layer 170a.

[0047] In the embodiment of the present application, two connecting layers 180 are also formed by sputtering to connect the corresponding side walls of the substrate 110, the resistance layer 120, the inner electrode layer 130, the heat-conducting layer 150 and the backside inner electrode layer 160 on both sides. Finally, a copper metal layer 151, a nickel metal layer and a tin metal layer are sequentially formed by electroplating. At this point, the high-power thin-film resistor 100 is basically completed.

[0048] According to the high-power thin-film resistor and the manufacturing method thereof, the following effects can be achieved: the resistance region has two end resistance regions and a middle resistance region near the two end inner electrode regions, the resistance values of the two end resistance regions and the middle resistance region are connected in series to form a total equivalent resistance, and the resistance values of the two end resistance regions are designed to be equal, so that the heat generated by the resistance layer is uniformly dispersed throughout the high-power thin-film resistor, and more than 50% of the heat can be directly conducted to the external circuit by the two end inner electrode regions of the inner electrode layer; the heat-conducting layer is arranged on the upper side of the resistance layer, and the resistance value regions of the resistance layer are covered under the area of the heat-conducting layer, so that the heat generated by the resistance value regions can be directly conducted to the heat-conducting layer through the passivation layer, thereby improving the heat dissipation rate; the direct contact between the heat-conducting layer and the underlying inner electrode at both ends can improve the heat dissipation rate; the two end resistance regions of the resistance layer are designed as double-bent patterns, and the middle resistance region is designed as a diagonal pattern, so that the width of the cross-sectional area in the resistance formula is increased, thereby achieving a lower target resistance value. In summary, the high-power thin-film resistor of the present application not only improves the overall heat dissipation efficiency of the resistor, but also increases the resistance power range.

[0049] While the application has been disclosed in an implementation form with specific references to details, it is not intended to limit the application to the details described. Rather, any modifications, substitutions, changes, and the like are possible within the scope and spirit of the application as described in the claims. Therefore, the scope of the application should be determined by the claims.

[0050]

Symbol Description

[0051] 100: high-power thin-film resistor

[0052] 110: substrate

[0053] 120: resistor layer

[0054] 120a, 120c: two-end resistor region

[0055] 120b: middle resistor region

[0056] 130: internal electrode layer

[0057] 130': plating layer

[0058] 130a, 130d: two-end internal electrode region

[0059] 130b, 130c: middle internal electrode region

[0060] 140: passivation layer

[0061] 150: heat-conducting layer

[0062] 150a, 150b: heat-conducting body

[0063] 150c: gap

[0064] 150': copper layer

[0065] 151: copper metal layer

[0066] 160: backside internal electrode layer

[0067] 170a: first protective layer

[0068] 170b: second protective layer

[0069] 180: connection layer

[0070] 190: external electrode

[0071] A-A': line

[0072] L, L1, L2, L3, L4, L5: length

[0073] W, W1, W2, W3, W4, W5: width

[0074] RT R1, R2, R3: resistance

[0075] 200: manufacturing method

[0076] 201, 202, 203, 204, 205, 206: steps

[0077] 301’: anti-plating layer

[0078] 302’, 303’: photoresist

Claims

1. A high power thin film resistor characterized by, Comprising: a substrate; a resistance layer disposed above the substrate, wherein the resistance layer has a middle resistance region and two end resistance regions; an inner electrode layer disposed above the resistance layer, wherein the inner electrode layer has a middle inner electrode region and two end inner electrode regions, dividing the resistance layer into the middle resistance region and the two end resistance regions; a passivation layer covering part of the resistance layer and the inner electrode layer; and a thermal conductive layer disposed above the passivation layer, wherein the thermal conductive layer has two thermal conductors and a gap between the two thermal conductors, and the two thermal conductors respectively contact the two end inner electrode regions of the inner electrode layer; wherein the middle resistance region and the two end resistance regions form a series resistance, and the two end resistance regions have the same resistance value.

2. The high power thin film resistor of claim 1, wherein wherein the middle resistance region and the two end resistance regions each comprise: a trimming region, wherein the trimming region is below the area covered by the two thermal conductors of the thermal conductive layer.

3. The high power thin film resistor of claim 1, wherein wherein comprising: a backside inner electrode layer disposed on the other side of the substrate relative to the side of the resistance layer.

4. The high power thin film resistor of claim 3, wherein wherein further comprising: two connection layers respectively disposed on the two side edges of the substrate, and connecting the backside inner electrode layer, the inner electrode layer and the thermal conductive layer on the two side edges.

5. The high power thin film resistor of claim 4, wherein, wherein further comprising two outer electrode layers having outer electrode thermal conductive layers, the two outer electrode layers respectively covering the corresponding side walls of the thermal conductive layer and the inner electrode layer.

6. The high power thin film resistor of claim 1, wherein wherein the two end resistance regions each are a double-bent pattern, and the double-bent pattern surrounds a corresponding one of the two end inner electrode regions.

7. A method of manufacturing a high power thin film resistor, characterized by, Comprising: depositing a resistance layer above a substrate; forming a patterned photoresist layer above the resistance layer; forming an inner electrode layer above the patterned photoresist layer; removing the patterned photoresist layer to make the inner electrode layer form a middle inner electrode region and two end inner electrode regions, and expose a middle resistance region and two end resistance regions of the underlying resistance layer, wherein the middle resistance region and the two end resistance regions form a series resistance, and the two end resistance regions have the same resistance value; forming a passivation layer above part of the resistance layer and the inner electrode layer; and forming a thermal conductive layer above the passivation layer, wherein the thermal conductive layer is formed with two thermal conductors and a gap between the two thermal conductors, and the two thermal conductors respectively contact the two end inner electrode regions of the inner electrode layer.

8. The method of claim 7, wherein, Further comprising: forming a trimming region in each of the middle resistance region and the two end resistance regions, wherein the trimming region is below the area covered by the two thermal conductors of the thermal conductive layer.

9. The method of claim 7, wherein, Further comprising forming a backside inner electrode layer on the other side of the substrate relative to the side of the resistance layer.

10. The method of claim 7, wherein, Further comprising forming two outer electrodes, wherein the two outer electrodes have outer electrode thermal conductive layers, and the two outer electrodes cover the corresponding side walls of the thermal conductive layer and the inner electrode layer.

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