Plasma device and plasma deposition apparatus

Abstract

The invention provides a plasma device and plasma deposition equipment. The device comprises a plasma reaction chamber which comprises an upper electrode plate and a lower electrode plate, and the upper electrode plate and the lower electrode plate have voltage difference to generate plasma; and a magnetic material including a first magnetic material having a length direction arranged above the first edge area of the upper electrode plate along the first side direction of the upper electrode plate and a length direction arranged below the first edge area of the lower electrode plate along the first side direction of the lower electrode plate. Therefore, a non-uniform magnetic field is constructed in the plasma reaction cavity by using the magnetic material to change the plasma density at the edge of the plasma reaction cavity, so that the plasma peak value appearing at the edge of the plasma reaction cavity can be reduced during large-area CCP discharge, and the plasma is more uniformly distributed in the whole plasma reaction cavity.

Description

Technical Field

[0001] The present application relates to the field of plasma processing technology, and more specifically, to a plasma device and a plasma deposition equipment. Background Art

[0002] Plasma processing technology is a key technology widely used in semiconductor, photovoltaic and other industries. Among them, plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced atomic layer deposition (PEALD) are two common plasma processing technologies, which usually require large-area capacitively coupled plasma source (CCP) RF discharge in the process. This discharge method can effectively improve production efficiency when processing larger area cells or related coating requirements. However, during the large-area CCP discharge process, due to factors such as edge effect, standing wave effect and skin effect, plasma peaks will appear at the edge of the chamber, thereby affecting the plasma uniformity of the entire board, and then affecting the coating effect of the entire board.

[0003] To solve this problem, the current method is to optimize the discharge parameters, such as reducing the discharge power and working gas pressure, increasing the distance between the discharge electrodes, etc. to improve the uniformity of the plasma in the chamber. However, although these methods can enhance the diffusion of plasma and improve the uniformity of plasma distribution, they will also change the overall density of the plasma in the chamber, thereby affecting process operations and reducing industrial production efficiency. In addition, there are some solutions that suppress the standing wave effect and improve the distribution of plasma by changing the design of the electrodes, for example, adding a dielectric layer between the electrodes or connecting a capacitor in parallel to the power electrode, but these solutions often require complex control systems and precise operations, which are difficult to implement in actual production. Summary of the invention

[0004] In order to overcome the problems existing in the related art at least to a certain extent, an embodiment of the present application provides a plasma device, comprising: a plasma reaction chamber, the plasma reaction chamber comprising an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, and the upper electrode plate and the lower electrode plate each having at least one side; and a magnetic material, comprising: a first magnetic material arranged above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate in a length direction and below a first edge region of the lower electrode plate in a length direction along a first side direction of the lower electrode plate, wherein a size of the first magnetic material in the length direction is greater than a size in the width direction, the first edge region of the upper electrode plate is a region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is a region of the lower electrode plate close to the first side of the lower electrode plate.

[0005] Furthermore, the upper electrode plate and the lower electrode plate are both quadrilateral electrode plates, and the magnetic material also includes: a first magnetic material arranged above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate in the length direction and arranged below the second edge region of the lower electrode plate in the length direction along the second side direction of the lower electrode plate, wherein the first magnetic material is a strip magnetic material, the second edge region of the upper electrode plate is a region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is a region of the lower electrode plate close to the second side of the lower electrode plate.

[0006] Furthermore, the magnetic material also includes: a first magnetic material which is arranged above the third edge region and the fourth edge region of the upper electrode plate along the third side direction and the fourth side direction of the upper electrode plate respectively in the length direction and is arranged below the third edge region and the fourth edge region of the lower electrode plate respectively in the length direction along the third side direction and the fourth side direction of the lower electrode plate, wherein the third edge region and the fourth edge region of the upper electrode plate are respectively regions of the upper electrode plate close to the third side and the fourth side of the upper electrode plate, and the third edge region and the fourth edge region of the lower electrode plate are respectively regions of the lower electrode plate close to the third side and the fourth side of the lower electrode plate.

[0007] Furthermore, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is a first pole, and the side away from the upper electrode plate is a second pole; the side of the first magnetic material located below the lower electrode plate away from the lower electrode plate is a first pole, and the side facing the lower electrode plate is a second pole.

[0008] Furthermore, the distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30 mm, the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30 mm; the distance between the first magnetic material and the first side edge or the second side edge or the third side edge or the fourth side edge adjacent to it is 2-40 mm.

[0009] Furthermore, the distances between the four sides of the upper electrode plate or the lower electrode plate and the center position of the upper electrode plate or the lower electrode plate are the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther from the center position of the upper electrode plate or the lower electrode plate is greater.

[0010] Furthermore, the magnetic material also includes a second magnetic material which is arranged above the first edge area of ​​the upper electrode plate along the first side direction of the upper electrode plate in the length direction and below the first edge area of ​​the lower electrode plate along the first side direction of the lower electrode plate in the length direction. The second magnetic material is closer to the center position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0011] Furthermore, the first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate that are not adjacent to each other, the magnetic material further comprises a second magnetic material which is arranged on the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate in the length direction, and is arranged below the first edge region and the second edge region of the lower electrode plate in the length direction, and a second magnetic material which is arranged on the first edge region and the second edge region of the upper electrode plate in the length direction, and is arranged on the first edge region and the second edge region of the upper electrode plate in the length direction, respectively. A third magnetic material is arranged below the first edge region and the second edge region of the lower electrode plate along the first side direction and the second side direction of the lower electrode plate, respectively, and the first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets; in each of the first edge region and the second edge region, the second magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material.

[0012] Further, in each of the first edge region and the second edge region, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is a first pole, and the side away from the upper electrode plate is a second pole; the side of the first magnetic material located below the lower electrode plate away from the lower electrode plate is a first pole, and the side facing the lower electrode plate is a second pole; the side of the second magnetic material located above the upper electrode plate away from the upper electrode plate is a first pole, and the side facing the upper electrode plate is a second pole; the side of the second magnetic material located below the lower electrode plate facing the lower electrode plate is a first pole, and the side away from the lower electrode plate is a second pole; the side of the third magnetic material facing the second magnetic material is a first pole, and the side away from the second magnetic material is a second pole.

[0013] Furthermore, the distance between the first magnetic material, the second magnetic material and the third magnetic material and the adjacent upper electrode plate or lower electrode plate is 1-30 mm; the distance between the first magnetic material and the adjacent first side edge or second side edge is 2-40 mm, the distance between the first magnetic material and the adjacent second magnetic material is 5-50 mm, and the distance between the second magnetic material and the adjacent third magnetic material is 10-80 mm.

[0014] Furthermore, along a third side of the rectangular electrode plate perpendicular to the first side, a cross-sectional area of ​​the second magnetic material is the same as a cross-sectional area of ​​the first magnetic material, and a cross-sectional area of ​​the third magnetic material is greater than a cross-sectional area of ​​the first magnetic material.

[0015] Furthermore, each of the first magnetic material, the second magnetic material and the third magnetic material is composed of a plurality of small magnets arranged along the first side edge or the second side edge.

[0016] Furthermore, the magnetic material also includes: side magnetic material arranged in a side area of ​​the plasma reaction chamber along the first side direction in the length direction, wherein the side area of ​​the plasma reaction chamber is an area located outside the first side of the plasma reaction chamber, and the first side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side.

[0017] Furthermore, the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0018] Furthermore, the first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate that are not adjacent, and the magnetic material further comprises: a first side magnetic material disposed in a first side region and a second side region of the plasma reaction chamber along the first side direction and the second side direction of the upper electrode plate in length direction, and a second side magnetic material disposed in a third side region and a fourth side region of the plasma reaction chamber along the first side direction and the second side direction of the lower electrode plate in length direction, wherein the first side region is an area located outside the first side of the plasma reaction chamber and between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate, and the second side region is an area located outside the second side of the plasma reaction chamber and located in the upper The third side region is an area located outside the first side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The fourth side region is an area located outside the second side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The first side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side. The second side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode and corresponding to the second side. The first magnetic material, the first side magnetic material and the second side magnetic material are all permanent magnets.

[0019] Furthermore, the magnetic flux of the first side magnetic material and the magnetic flux of the second side magnetic material are both higher than or equal to the magnetic flux of the first magnetic material.

[0020] Furthermore, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is a first pole, and the side away from the upper electrode plate is a second pole; the side of the first magnetic material located below the lower electrode plate away from the lower electrode plate is a first pole, and the side facing the lower electrode plate is a second pole; the side of the first side magnetic material away from the plasma reaction chamber is a first pole, and the side facing the plasma reaction chamber is a second pole; the side of the second side magnetic material facing the plasma reaction chamber is a first pole, and the side away from the plasma reaction chamber is a second pole.

[0021] Furthermore, the distance between the first magnetic material and the adjacent upper electrode plate or lower electrode plate is 1-30 mm, the distance between the first side magnetic material and the second side magnetic material and the adjacent side of the plasma reaction chamber is 1-40 mm, the distance between the first magnetic material and the adjacent first side or second side is 2-40 mm, and the distance between the first side magnetic material and the second side magnetic material and the adjacent first side or second side is 2-40 mm.

[0022] Further, in a direction along a third side of the rectangular electrode plate that is perpendicular to the first side, the cross-sectional area of ​​the first side magnetic material and the second side magnetic material is the same as the cross-sectional area of ​​the first magnetic material.

[0023] Furthermore, the magnetic material is an electromagnet, which is used to pass direct current or alternating current during the process of generating plasma.

[0024] Furthermore, the upper electrode plate and the lower electrode plate are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the spacing between the upper electrode plate and the lower electrode plate is 10-100 mm.

[0025] An embodiment of the present application also provides a plasma deposition device, comprising: the plasma device as described above; an outer cavity surrounding the plasma device; and an air inlet disposed on the outer cavity for introducing a reaction gas.

[0026] According to the plasma device and plasma deposition equipment of the embodiments of the present application, magnetic materials are arranged above the edge area of ​​the upper electrode plate and below the edge area of ​​the lower electrode plate of the plasma reaction chamber, and the magnetic materials are used to construct a non-uniform magnetic field in the plasma reaction chamber, so as to change the plasma density at the edge of the plasma reaction chamber, thereby reducing the plasma peak appearing at the edge of the plasma reaction chamber during large-area CCP discharge, and making the plasma more evenly distributed in the entire plasma reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The attached drawings below are part of the specification of the present application, which illustrate embodiments of the present application. The attached drawings together with the description of the specification are used to explain the principles of the present application.

[0028] Figure 1 A front cross-sectional view of a plasma device according to an embodiment of the present application is shown.

[0029] Figure 2 A front cross-sectional view of a plasma device according to a first embodiment of the present application is shown.

[0030] Figure 3 Shows Figure 2 A top view and a bottom view of a plasma device are shown.

[0031] Figure 4 A front cross-sectional view of another plasma device according to the first embodiment of the present application is shown.

[0032] Figure 5 Shows Figure 4 A top view and a bottom view of a plasma device are shown.

[0033] Figure 6 A front cross-sectional view of another plasma device according to the first embodiment of the present application is shown.

[0034] Figure 7 Shows Figure 6 A top view and a bottom view of a plasma device are shown.

[0035] Figure 8 Shows Figure 6 The distribution diagram of the equivalent electric field coil and magnetic flux lines when the magnetic material in the plasma device is an electromagnet.

[0036] Fig. 9 A front cross-sectional view of a plasma device according to a second embodiment of the present application is shown.

[0037] Fig.10 Shows Fig. 9 A top view and a bottom view of a plasma device are shown.

[0038] Fig.11 The top view and bottom view of the first magnetic material, the second magnetic material and the third magnetic material composed of a plurality of small magnets are shown.

[0039] Fig.12 Shows Fig. 9 A schematic diagram of magnetic field distribution during discharge of a plasma device in a specific application example of the plasma device shown.

[0040] Fig.13 A front cross-sectional view of a plasma device according to a third embodiment of the present application is shown.

[0041] Fig.14 Shows Fig.13 A top view and a bottom view of a plasma device are shown.

[0042] Fig.15 Shows Fig.13 A schematic diagram of magnetic field distribution during discharge of a plasma device in a specific application example of the plasma device shown.

[0043] Fig.16A schematic diagram of the electron density distribution in the plasma reaction chamber without adding magnetic material is shown.

[0044] Fig.17 Shows Fig.13 A schematic diagram of electron density distribution in a plasma reaction chamber in a specific application example of a plasma device is shown.

[0045] Fig.18 The radial electron density distribution in the cavity center without adding magnetic material and Fig.13 A curve comparison and analysis diagram of the radial electron density distribution in the center of the cavity in a specific application example of the plasma device shown.

[0046] Fig.19 A schematic diagram of a plasma deposition device according to a fourth embodiment of the present application is shown. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clearly understood, the spirit of the contents disclosed in the present application will be clearly explained with the accompanying drawings and detailed descriptions below. After understanding the embodiments of the contents of the present application, any technician in the relevant technical field can change and modify them according to the techniques taught by the contents of the present application without departing from the spirit and scope of the contents of the present application.

[0048] The exemplary embodiments and descriptions of the present application are used to explain the present application, but are not intended to limit the present application. In addition, elements / components with the same or similar reference numerals used in the drawings and embodiments are used to represent the same or similar parts.

[0049] The terms “first”, “second”, etc. used in this document do not particularly refer to an order or sequence, nor are they used to limit this application. They are only used to distinguish elements or operations described with the same technical terms.

[0050] The words “include,” “including,” “have,” “contain,” etc. used in this document are open-ended terms, meaning including but not limited to.

[0051] As used herein, "and / or" includes any or all combinations of the items described.

[0052] As used herein, “plurality” includes “two” and “more than two”; as used herein, “plurality of groups” includes “two groups” and “more than two groups”.

[0053] Certain terms used to describe the present application are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art regarding the description of the present application.

[0054] Figure 1A schematic diagram of a plasma device according to an embodiment of the present application is shown.

[0055] like Figure 1 As shown, the plasma device includes a plasma reaction chamber. The plasma reaction chamber has an upper electrode plate 1 and a lower electrode plate 2, and the upper electrode plate 1 and the lower electrode plate 2 have a voltage difference to generate plasma. The plasma device may also include an air inlet to introduce a reaction gas. Specifically, in application, a radio frequency power supply is applied to the upper electrode plate 1 and the lower electrode plate 2, at which time a high-frequency electric field is generated between the upper and lower electrode plates, and gas molecules are excited and ionized in this high-frequency electric field to form plasma. This process may also be referred to as a CCP radio frequency discharge process.

[0056] During the CCP RF discharge process, due to the lower pressure, the mean free path of electrons satisfies the migration and diffusion of electrons in the cavity. High-energy electrons are generated in the area near the electrode plate and diffuse to the central area to collide and generate and maintain plasma. In this process, the electrons near the electrode plate collide with the particles in the central area to achieve energy exchange. The larger the size of the plasma reaction chamber, the higher the number of substrates that can be processed in a single batch; the higher the frequency of the RF power supply used to discharge and generate plasma, the less time is required to process the unit batch of substrates, and the damage to the substrate caused by the bombardment of high-energy ions in the plasma can be greatly reduced. However, the increase in the size of the electrode plate and the increase in the discharge frequency will bring about problems such as edge effect, skin effect and standing wave effect, which will cause plasma peaks to appear at the edge of the reaction chamber, thereby affecting the plasma uniformity of the entire plate.

[0057] In view of this, taking into account the electromagnetic effect and chamber edge discharge effect during CCP discharge, an embodiment of the present application provides a plasma device, in which magnetic materials are arranged in the edge areas of the upper and lower electrode plates, and the plasma density at the edge of the plasma reaction chamber is changed by appropriate magnetic field distribution, so that during large-area CCP discharge, the plasma peak value appearing at the edge of the plasma reaction chamber can be reduced, and the plasma distribution in the entire plasma reaction chamber can be more uniform.

[0058] According to the first embodiment of the present application, a plasma device includes: a plasma reaction chamber, the plasma reaction chamber includes an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate have a voltage difference to generate plasma, and the upper electrode plate and the lower electrode plate each have at least one side; and a magnetic material, including: a first magnetic material arranged above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate in a length direction and below a first edge region of the lower electrode plate in a length direction along a first side direction of the lower electrode plate. The size of the first magnetic material in the length direction is greater than the size in the width direction. The first edge region of the upper electrode plate is a region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is a region of the lower electrode plate close to the first side of the lower electrode plate.

[0059] The present application is described based on the orientation relationship when the plasma reaction chamber is placed horizontally and forwardly. Specifically, the plasma reaction chamber includes two electrode plates in opposite positions, which are respectively referred to as the upper electrode plate and the lower electrode plate. The "upper" and "lower" here refer to the upper-lower orientation relationship when the plasma reaction chamber is placed horizontally and forwardly, and can also refer to the upper-lower orientation relationship in the discharge direction of the plasma reaction chamber; and when the plasma reaction chamber is placed vertically or tilted, it can be considered that the "upper" and "lower" at this time refer to the upper-lower orientation relationship in the discharge direction of the plasma reaction chamber, that is, the upper and lower electrode plates at this time still refer to the upper electrode plate and the lower electrode plate when placed horizontally and forwardly, but the orientation relationship at this time should change with the change of the placement orientation of the plasma reaction chamber. For example, when the plasma reaction chamber is placed upside down, according to the up-down relationship in the discharge direction of the plasma reaction chamber, the upper electrode plate is located at the bottom, and the lower electrode plate is located at the top. At this time, "located above" the upper electrode plate should be changed to "located below" the upper electrode plate, and "located below" the lower electrode plate should be changed to "located above" the lower electrode plate.

[0060] Similarly, in the present application, when the plasma reaction chamber is placed horizontally and forwardly, the sides of the upper electrode plate and the lower electrode plate refer to the sides of the upper surface of the upper electrode plate and the lower surface of the lower electrode plate, the first edge area of ​​the upper electrode plate refers to an area of ​​the upper surface of the upper electrode plate, and the first edge area of ​​the lower electrode plate refers to an area of ​​the lower surface of the lower electrode plate. When the plasma reaction chamber is placed vertically or tilted, the orientation relationship at this time should change with the change of the orientation of the plasma reaction chamber. For example, when the plasma reaction chamber is placed upside down, the sides of the upper electrode plate and the lower electrode plate refer to the sides of the lower surface of the upper electrode plate and the upper surface of the lower electrode plate, the first edge area of ​​the upper electrode plate refers to an area of ​​the lower surface of the upper electrode plate, and the first edge area of ​​the lower electrode plate refers to an area of ​​the upper surface of the lower electrode plate. The upper surface and the lower surface here refer to the surface of the electrode plate facing upward or downward.

[0061] In addition, "disposed above..." and "disposed below..." refer to being located above or below in the vertical direction, that is, directly above or directly below. For example, being disposed above the first edge region of the upper electrode plate refers to being disposed directly above the first edge region, and does not include being disposed above on the oblique side that exceeds the first edge region in the vertical direction.

[0062] In the above embodiment, magnetic materials are arranged in the edge areas of the upper and lower electrode plates to utilize the magnetic field generated by the magnetic material to change the distribution of plasma in the plasma reaction chamber. Specifically, when performing large-area CCP discharge, the magnetic field generated by the magnetic material can cause the electrons to be affected by the Lorentz force and perform spiral motion when vertically passing through the magnetic flux lines. When the magnetic field is weak, the Lorentz force will increase the movement path of the electrons, increase the collision frequency of the electrons, and increase the plasma density. When the magnetic field is strong enough, the Lorentz force will reduce the cyclotron radius of the electrons, reduce the mean free path of the electrons, and reduce the collision frequency of the electrons. Therefore, in the embodiment of the present application, the magnetic field generated by the magnetic material can, on the one hand, hinder the migration and diffusion of high-energy electrons generated by the discharge at the edge of the electrode plate, and on the other hand, reduce the collision generation rate of the plasma, ultimately achieving the effect of weakening the peak value of the plasma edge.

[0063] Figure 2 FIG. 4 shows a front cross-sectional view of a plasma device according to a first embodiment of the present application, Figure 3 Shows Figure 2 The top view and bottom view of the plasma device shown. Figure 2 and Figure 3 As shown, the plasma device includes a plasma reaction chamber and a magnetic material. The plasma reaction chamber includes an upper electrode plate 1 and a lower electrode plate 2. Figure 2 and Figure 3In the example, the upper electrode plate 1 and the lower electrode plate 2 are both quadrilaterals, and the first side is a short side of the quadrilateral. Specifically, the first side of the upper electrode plate 1 is the first short side 11 of the upper electrode plate 1, and the first side of the lower electrode plate 2 is the first short side 21 of the lower electrode plate 2. The first magnetic material 3 includes a first magnetic material arranged above the first edge region of the upper electrode plate along the first short side 11 of the upper electrode plate 1 in the length direction, and a first magnetic material arranged below the first edge region of the lower electrode plate along the first short side 21 of the lower electrode plate in the length direction. Among them, the first edge region of the upper electrode plate 1 is the region of the upper electrode plate 1 close to the first short side 11, and the first edge region of the lower electrode plate 2 is the region of the lower electrode plate 2 close to the first short side 21. The size of the first magnetic material 3 in the length direction, that is, the size along the first short side direction, is greater than the size in the width direction, that is, the size perpendicular to the first short side direction.

[0064] In the above embodiment, magnetic material is disposed in the edge region corresponding to one short side of the upper and lower electrode plates, so that the edge peak of the plasma near the edge region can be weakened.

[0065] Figure 4 FIG. 4 shows a front cross-sectional view of another plasma device according to the first embodiment of the present application, Figure 5 Shows Figure 4 The top view and bottom view of the plasma device shown. Figure 4 and Figure 5 As shown, the upper electrode plate 1 and the lower electrode plate 2 of the plasma reaction chamber are both circular, and the first side is the circumferential side of the circle. The first magnetic material 3 includes a first magnetic material arranged above the first edge area of ​​the upper electrode plate along the circumferential side of the upper electrode plate in the length direction and a first magnetic material arranged below the first edge area of ​​the lower electrode plate in the length direction along the circumferential side of the lower electrode plate. The first edge area of ​​the upper electrode plate 1 is the area of ​​the upper electrode plate 1 close to the circumferential side, and the first edge area of ​​the lower electrode plate 2 is the area of ​​the lower electrode plate 2 close to the circumferential side. In the present application, the length direction of the magnetic material is the direction in which the length of the magnetic material extends, so the size of the first magnetic material 3 in the length direction, that is, the size along the circumferential side, is greater than the size in the width direction, that is, the size from the circumferential side to the center of the circle.

[0066] In the above embodiment, magnetic materials are provided at the edge regions corresponding to the circumferential sides of the upper and lower electrode plates, so that the plasma edge peak at the circular edge region can be weakened.

[0067] As can be seen from the above, when the electrode plate is circular, the electromagnetic material is arranged on a circumferential side to achieve comprehensive magnetic field edge coverage, so that the edges of the plasma reaction chamber can all achieve plasma edge peak suppression. When the electrode plate is, for example, a quadrilateral, only the plasma edge peak suppression on the side covered by the electromagnetic material can be achieved. Therefore, in one embodiment, when the upper electrode plate and the lower electrode plate are both quadrilateral electrode plates, the magnetic material also includes: a first magnetic material arranged above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate in the length direction and below the second edge region of the lower electrode plate in the length direction along the second side direction of the lower electrode plate, wherein the first magnetic material is a strip magnetic material, the second edge region of the upper electrode plate is the region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is the region of the lower electrode plate close to the second side of the lower electrode plate. In this way, magnetic field coverage of the two sides corresponding to the electromagnetic material can be achieved. For example, when the distance between two short sides of the quadrilateral is relatively far, so that the generated plasma edge peak is relatively large, magnetic materials can be arranged at the two sides with relatively far distance to suppress the relatively large plasma edge peak.

[0068] Further, on the basis of the above embodiment, the magnetic material may also include: a first magnetic material disposed above the third edge region and the fourth edge region of the upper electrode plate along the third side direction and the fourth side direction of the upper electrode plate in the length direction, and disposed below the third edge region and the fourth edge region of the lower electrode plate in the length direction along the third side direction and the fourth side direction of the lower electrode plate, wherein the third edge region and the fourth edge region of the upper electrode plate are respectively regions of the upper electrode plate close to the third side and the fourth side of the upper electrode plate, and the third edge region and the fourth edge region of the lower electrode plate are respectively regions of the lower electrode plate close to the third side and the fourth side of the lower electrode plate. In this way, full coverage of the magnetic field on the four sides of the electrode plate can be achieved, thereby suppressing the plasma peaks at all sides of the quadrilateral electrode plate when the four sides of the quadrilateral are far apart.

[0069] It should be noted that, in the present application, the "first side", "second side", "third side" and "fourth side" of the upper electrode plate are all sides whose positions correspond to the "first side", "second side", "third side" and "fourth side" of the lower electrode plate. For example, if the first side of the upper electrode plate is the short side on the left, then the first side of the lower electrode plate is also the short side on the left in the same orientation. Furthermore, in the present application, the shape and size of the upper electrode plate and the lower electrode plate can be substantially the same.

[0070] Figure 6FIG. 4 shows a front cross-sectional view of another plasma device according to the first embodiment of the present application, Figure 7 Shows Figure 6 The top view and bottom view of the plasma device shown. Figure 6 and Figure 7 As shown, the plasma device includes a plasma reaction chamber and a magnetic material, and the plasma reaction chamber includes an upper electrode plate 1 and a lower electrode plate 2. Figure 6 and Figure 7 In the plasma device shown, the upper electrode plate 1 and the lower electrode plate 2 are both rectangular, respectively including two long sides and two short sides. Specifically, the first side and the second side of the upper electrode plate 1 are respectively the first short side 11 and the second short side 12 of the upper electrode plate 1, and the first side and the second side of the lower electrode plate 2 are respectively the first short side 21 and the second short side 22 of the lower electrode plate 2. The magnetic material 3 includes a first magnetic material, the length direction of which is respectively arranged on the first edge region and the second edge region of the upper electrode plate 1 along the direction of the first short side 11 and the second short side 12 of the upper electrode plate 1, and the length direction is respectively arranged below the first edge region and the second edge region of the lower electrode plate 2 along the direction of the first short side 21 and the second short side 22 of the lower electrode plate 2. The first edge region and the second edge region of the upper electrode plate are respectively the regions of the upper electrode plate 1 close to the first short side 11 and the second short side 12, and the first edge region and the second edge region of the lower electrode plate 2 are respectively the regions of the lower electrode plate 2 close to the first short side 21 and the second short side 22. Those skilled in the art understand that the electromagnetic material 3 can also be arranged on one side of the long side, but because the two short sides are farther apart, the plasma peak generated is higher, so it is arranged on one side of the short side to suppress the side with a larger plasma peak. Of course, magnetic materials 3 can also be arranged on all four sides.

[0071] In one embodiment, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; and the side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole. The first pole is the N pole, and the second pole is the S pole, or the first pole is the S pole, and the second pole is the N pole. In this way, the different polarities of the electrodes at the upper and lower electrode plates are relative to each other, and magnetic flux lines in the vertical direction between the upper and lower electrode plates can be generated, so that electrons are affected by the Lorentz force when vertically passing through the magnetic flux lines and perform spiral motion. When the magnetic field is strong enough, the cyclotron radius of the electrons will be reduced, the mean free path of the electrons will be reduced, and the collision frequency of the electrons will be reduced, thereby achieving the effect of weakening the edge peak of the plasma.

[0072] In one embodiment, the distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30 mm, the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30 mm; the distance between the first magnetic material and its adjacent side is 2-40 mm. In this way, the magnetic material is arranged around the edge area of ​​the electrode plate, and at the same time, there is a certain distance between the magnetic material and the upper and lower electrode plates relative to each other, and the central vertical magnetic flux lines generated by the magnetic material and the side of the plasma reaction chamber are also controlled to a certain distance, so that the strength and position of the formed magnetic field can be better controlled, so as to better suppress the plasma edge peak in the plasma reaction chamber.

[0073] In one embodiment, the distances between the four sides of the upper electrode plate or the lower electrode plate and the center position of the upper electrode plate or the lower electrode plate are the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther from the center position of the upper electrode plate or the lower electrode plate is larger. Since the plasma density at the edge of the reaction chamber is higher than the plasma density in the central area during large-area CCP discharge, in this embodiment, the magnetic flux of the first magnetic material corresponding to the side farther from the center position of the electrode plate is set to be larger.

[0074] In one embodiment, at the upper electrode plate or the lower electrode plate, the length of the first magnetic material arranged along a certain side edge is equal to or slightly less than the length of the side edge.

[0075] In one embodiment, the first magnetic material 3 may be an electromagnet. When the first magnetic material 3 is an electromagnet, Figure 8 As shown, the first magnet 3 passing direct current or alternating current can be regarded as a rectangular coil arranged at the edge of the chamber, which generates vertical magnetic flux lines and can suppress discharges on the side walls and edges of the reaction chamber. Those skilled in the art can understand that, depending on the density of the plasma, the magnetic field strength can be adjusted as needed by changing the current and voltage of the electromagnet.

[0076] In one embodiment, the first magnetic material 3 may be a permanent magnet. The static magnetic field generated by the permanent magnet can be used to optimize the overall uniformity of the plasma in the cavity by utilizing the characteristics that the static magnetic field is easy to control and does not affect the overall characteristics of the plasma. Specifically, a non-uniform magnetic field is constructed in the reaction cavity by utilizing the permanent magnets arranged above and below the edge area of ​​the electrode plate of the reaction cavity to control the plasma density in the cavity, thereby ultimately optimizing the uniformity of the entire plasma cavity during large-area CCP discharge.

[0077] In addition, according to specific circumstances, for example, for different discharge parameters, plasma chamber parameters, etc., considering the different plasma densities on the magnetic field attenuation ability, in addition to the above-mentioned first magnetic material 3, the intensity of the magnetic field and the direction and distribution of the magnetic field can be controlled by arranging magnetic materials of different sizes at different positions, so that the plasma density under different circumstances can be better optimized. Specifically, according to actual needs, magnetic materials of different sizes and different magnetic fluxes can be selected for combination, or a energized coil can be used to generate a variable magnetic field. Preferably, the magnetic flux of the magnetic material can be in the range of 0.1Gs-10Gs.

[0078] Taking into account the characteristics that the plasma density at the edge of the reaction chamber is higher than the plasma density in the central area during large-area CCP discharge, the magnetic flux of multiple magnetic materials arranged at the same edge area of ​​the upper and lower electrode plates generally decreases in a gradient in the order from the outside of the reaction chamber to the middle, that is, the closer the magnetic material is to the outside of the reaction chamber, the higher the magnetic flux, and the closer the magnetic material is to the middle of the reaction chamber, the lower the magnetic flux, so that the edge discharge effect can be better suppressed. Based on this, on the basis of the above-mentioned first embodiment, according to the second embodiment of the present application, in addition to the first magnetic material 3, the magnetic material also includes a second magnetic material arranged along the first side direction of the upper electrode plate in the length direction on the first edge area of ​​the upper electrode plate and along the first side direction of the lower electrode plate in the length direction. The second magnetic material is closer to the center position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material. That is, the edge discharge effect can be better suppressed by the magnetic material with a gradient arrangement of magnetic flux. In one embodiment, the first magnetic material and the second magnetic material may be permanent magnets, or the first magnetic material and the second magnetic material may be electromagnets, and current is supplied to the second magnetic material in such a way that the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0079] Fig. 9 FIG. 4 shows a front cross-sectional view of a plasma device according to a second embodiment of the present application, Fig.10 Shows Fig. 9 The top view and bottom view of the plasma device shown. Fig. 9 and Fig.10 As shown, the first electrode plate and the second electrode plate are both rectangular electrode plates, and the first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate. Fig. 9 and Fig.10In the middle are two short sides. In addition to the first magnetic material 3, the magnetic material also includes a second magnetic material 4 which is arranged on the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate in the length direction, and is arranged below the first edge region and the second edge region of the lower electrode plate in the length direction, and a third magnetic material 5 which is arranged on the first edge region and the second edge region of the upper electrode plate in the length direction, and is arranged below the first edge region and the second edge region of the lower electrode plate in the length direction, respectively. In each edge region, the second magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material. The first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets.

[0080] In one embodiment, in each edge region, the first magnetic material located above the upper electrode plate has a side facing the upper electrode plate as the first pole, and a side facing away from the upper electrode plate as the second pole; the first magnetic material located below the lower electrode plate has a side facing away from the lower electrode plate as the first pole, and a side facing the lower electrode plate as the second pole; the second magnetic material located above the upper electrode plate has a side facing away from the upper electrode plate as the first pole, and a side facing the upper electrode plate as the second pole; the second magnetic material located below the lower electrode plate has a side facing the lower electrode plate as the first pole, and a side facing away from the lower electrode plate as the second pole; the third magnetic material has a side facing the second magnetic material as the first pole, and a side facing away from the second magnetic material as the second pole. The first pole of the magnetic material is the N pole, and the second pole is the S pole, or the first pole of the magnetic material is the S pole, and the second pole is the N pole.

[0081] The first magnetic material 3, the second magnetic material 4 and the third magnetic material 5 of the present application can be a whole piece of bar-shaped magnetic material, which has an N pole and an S pole in the thickness direction. Specifically, the first magnetic material 3 and the second magnetic material 4 are N poles or S poles on the surface facing or away from the electrode plate, and the third magnetic material 5 is N poles or S poles on the surface facing or away from the second magnetic material. Or, Fig.11 As shown, the first magnetic material 3, the second magnetic material 4 or the third magnetic material 5 can also be composed of a plurality of small magnets arranged along the first or second side direction of the electrode plate, and the small magnets constituting the first magnetic material 3 and the second magnetic material 4 all have a first pole or a second pole on the surface facing or away from the electrode plate, and the small magnets constituting the third magnetic material 5 all have a first pole or a second pole on the surface facing or away from the second magnetic material.

[0082] In one embodiment, the distance between the first magnetic material 3, the second magnetic material 4 and the third magnetic material 5 and the adjacent upper electrode plate 1 or lower electrode plate 2 is 1-30 mm. The distance between the first magnetic material 3 and the adjacent first side or second side is 2-40 mm, the distance between the first magnetic material 3 and the adjacent second magnetic material 4 is 5-50 mm, and the distance between the second magnetic material 4 and the adjacent third magnetic material 5 is 10-80 mm.

[0083] Magnetic material fixing devices may be provided at corresponding positions of the upper electrode plate 1 and the lower electrode plate 2 to install the magnetic material.

[0084] In one embodiment, the cross-sectional area of ​​the second magnetic material 4 along the long side direction is the same as the cross-sectional area of ​​the first magnetic material 3 along the long side direction, and the cross-sectional area of ​​the third magnetic material 5 along the long side direction is greater than the cross-sectional area of ​​the first magnetic material 3 along the long side direction.

[0085] In one embodiment, at the upper electrode plate 1 or the lower electrode plate 2, the length of the first magnetic material 3 is equal to or slightly less than the length of the first side or the second side, the length of the second magnetic material 4 is equal to or slightly less than the length of the first magnetic material 3, and the length of the third magnetic material 5 is equal to or slightly less than the length of the second magnetic material 4. Specifically, when the magnetic material is only arranged on the first and second opposite sides, the lengths of the first, second and third magnetic materials may be equal; when the magnetic material is arranged on all four sides of the electrode plate, the length of the first magnetic material is greater than the length of the second magnetic material, and the length of the second magnetic material is greater than the length of the third magnetic material, so that a circle of magnetic material formed along the four sides by the first magnetic material surrounds a circle of magnetic material formed along the four sides by the second magnetic material, and a circle of magnetic material formed along the four sides by the second magnetic material surrounds a circle of magnetic material formed along the four sides by the third magnetic material. In addition, for a circle of magnetic material formed along the four sides by the first, second or third magnetic material, it can be formed as one piece, or formed by splicing four strip-shaped magnetic materials respectively.

[0086] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500mm and a width of 10-500mm, and the spacing between the upper electrode plate and the lower electrode plate is 10-100mm. Preferably, it is a rectangle with a length of 100-300mm and a width of 50-200mm, and the spacing between the upper electrode plate and the lower electrode plate is 20-80mm. The upper and lower electrode plates may be rectangular or square, but understandably, they are not necessarily rectangular. When the edge of the rectangular or square electrode plate is far from the center, a plasma peak will appear. This scheme arranges a regulating magnetic material at the edge position, which can be used to regulate the plasma peak at the edge. The spacing between the upper and lower electrode plates defines the discharge area range of the plasma, and the discharge area range has a direct impact on the formation and size of the edge peak.

[0087] In one embodiment, the cross-sectional area of ​​the second magnetic material 4 along the long side direction and the cross-sectional area of ​​the first magnetic material 3 along the long side direction are in the range of 5mm*5mm-30mm*30mm, and the cross-sectional area of ​​the third magnetic material 5 along the long side direction is in the range of 10mm*60mm-5mm*200mm.

[0088] In one embodiment, the magnetic flux of the first, second and third magnetic materials is in the range of 0.1-20 Gs, preferably, in the range of 0.3-10 Gs.

[0089] According to the above Fig. 9 The plasma device shown in the present application gives a specific application example. In this specific application example, the upper and lower electrode plates are both 1800mm*900mm rectangles, and the spacing between the upper and lower electrode plates is 70mm; the size of the first magnetic material and the second magnetic material, the cross-sectional dimension along the long side of the rectangle is 10mm*10mm; the size of the third magnetic material, the cross-sectional dimension along the long side of the rectangle is 10mm*60mm; the distance between the magnetic material and the adjacent electrode plate is 5mm; the distance between the first magnetic material and the adjacent electrode plate short side is 10mm, the distance between the first magnetic material and the second magnetic material is 15mm, and the distance between the third magnetic material and the second magnetic material is 30mm; the magnetic flux of the first magnetic material and the second magnetic material is 1Gs, and the magnetic flux of the third magnetic material is 0.4Gs; the first pole of the magnetic material is set to the N pole, and the second pole is set to the S pole, and the resulting magnetic field distribution is as shown in Fig.12 As shown ( Fig.12 The magnetic field distribution diagram of only one side of the reaction chamber is schematically shown, and the magnetic field distribution of the other side is the same as the one shown). In this way, the first magnetic material and the second magnetic material at the edge of the electrode plate limit the migration and diffusion of electrons with a stronger magnetic field, while the third magnetic material with a smaller magnetic flux allows electrons to diffuse along the magnetic flux lines to a certain extent. Fig.12 It can be seen that the magnetic field is concentrated towards the corner of the chamber in a gradient manner. The closer to the edge of the plasma reaction chamber, the stronger the influence of the magnetic field. Through this gradient magnetic field distribution, the edge discharge effect can be well suppressed, thereby regulating the plasma density in the entire chamber, and ultimately achieving the optimization of the plasma uniformity in the entire chamber during large-area CCP discharge.

[0090] In the above-mentioned second embodiment, by arranging a plurality of magnetic materials whose magnetic fluxes are arranged in a gradient from large to small in the order from outside to inside in the same edge area of ​​the electrode plate, the edge discharge effect can be better suppressed, thereby achieving the optimization of the uniformity of the entire plasma cavity during large-area CCP discharge.

[0091] In addition, considering the characteristics that the plasma density at the edge of the reaction chamber is higher than the plasma density in the central area during large-area CCP discharge, a side magnetic material can also be arranged at the side of the plasma reaction chamber, and the magnetic field generated by the side magnetic material can further affect the plasma density at the edge of the plasma reaction chamber. Therefore, on the basis of the first embodiment, according to the third embodiment of the present application, the magnetic material also includes: a side magnetic material arranged in the side area of ​​the plasma reaction chamber along the first side direction in the length direction, wherein the side area of ​​the plasma reaction chamber is an area outside the first side of the plasma reaction chamber, and the first side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side. That is, the edge discharge effect is better suppressed by arranging the magnetic material on the side of the plasma reaction chamber. In one embodiment, the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material. The first magnetic material and the side magnetic material can be permanent magnets, or the first magnetic material and the side magnetic material can also be electromagnets, and the power is supplied in a manner that the magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0092] In the third embodiment described above, the magnetic field generated by the side magnetic material and the first magnetic material can hinder the migration and diffusion of high-energy electrons generated by the discharge between the electrode plate edge and the electrode plates, and can also reduce the collision generation rate of the plasma, ultimately achieving the effect of weakening the plasma edge peak.

[0093] Fig.13 FIG. 4 shows a front cross-sectional view of a plasma device according to a third embodiment of the present application, Fig.14 Shows Fig.13 The top view and bottom view of the plasma device shown. Fig.13 and Fig.14 As shown, the first electrode plate and the second electrode plate are both rectangular electrode plates, and the first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate. Fig.13 and Fig.14 In the middle are two short sides. In addition to the first magnetic material 3, the magnetic material also includes a first side magnetic material 6 arranged in the first side area and the second side area of ​​the plasma reaction chamber along the first side direction and the second side direction of the upper electrode plate in the length direction, and a second side magnetic material 7 arranged in the third side area and the fourth side area of ​​the plasma reaction chamber along the first side direction and the second side direction of the lower electrode plate in the length direction. Among them, the first side area is an area located outside the first side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the upper electrode plate. The second side area is an area located outside the second side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the upper electrode plate. The third side area is an area located outside the first side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The fourth side area is an area located outside the second side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The first side is the side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side. The second side is the side of the plasma reaction chamber located between the upper electrode plate and the lower electrode and corresponding to the second side. The first magnetic material, the first side magnetic material and the second side magnetic material are all permanent magnets.

[0094] In one embodiment, the magnetic flux of the first side magnetic material and the second side magnetic material are both higher than or equal to the magnetic flux of the first magnetic material.

[0095] In one embodiment, the first magnetic material 3 located on the upper electrode plate 1 has a first pole facing the upper electrode plate 1, and a second pole facing away from the upper electrode plate 1; the first magnetic material 3 located below the lower electrode plate 2 has a first pole facing away from the lower electrode plate 2, and a second pole facing the lower electrode plate 2; the first side magnetic material 6 has a first pole facing away from the plasma reaction chamber, and a second pole facing the plasma reaction chamber; the second side magnetic material 6 has a first pole facing the plasma reaction chamber, and a second pole facing away from the plasma reaction chamber. The first pole of the magnetic material is an N pole, and the second pole is an S pole, or the first pole of the magnetic material is an S pole, and the second pole is an N pole.

[0096] Similar to the above-mentioned first magnetic material 3, second magnetic material 4 and third magnetic material 5, the first side magnetic material 6 and the second side magnetic material 7 in the embodiment of the present application can be a whole piece of bar-shaped magnetic material, which has an N pole or an S pole on the surface facing and away from the plasma reaction chamber. Alternatively, the first side magnetic material 6 and the second side magnetic material 7 can also be composed of a plurality of small magnets arranged along the first or second side direction of the electrode plate, and these small magnets all have a first pole or a second pole facing or away from the plasma reaction chamber.

[0097] In one embodiment, the distance between the first magnetic material 3 and the adjacent upper electrode plate or lower electrode plate is 1-30 mm, and the distance between the first side magnetic material and the second side magnetic material and the adjacent side of the plasma reaction chamber is 1-40 mm. The distance between the first magnetic material and the adjacent first side or second side is 2-40 mm, and the distance between the first side magnetic material and the second side magnetic material and the adjacent first side or second side is 2-40 mm.

[0098] In one embodiment, the cross-sectional area of ​​the first side magnetic material 6 and the second side magnetic material 7 along the long side direction is the same as the cross-sectional area of ​​the first magnetic material 3 along the long side direction.

[0099] In one embodiment, the length of the first side magnetic material 6 and the second side magnetic material 7 is equal to or slightly less than the length of the first side or the second side of the electrode plate.

[0100] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the spacing between the upper electrode plate and the lower electrode plate is 10-100 mm. Preferably, it is a rectangle with a length of 100-300 mm and a width of 50-200 mm, and the spacing between the upper electrode plate and the lower electrode plate is 20-80 mm. Please refer to the parameter description of the aforementioned embodiment for details, which will not be repeated here.

[0101] In one embodiment, the cross-sectional area of ​​the first magnetic material 3 , the first side magnetic material 6 , and the second side magnetic material 7 along the long side direction is in the range of 5 mm*5 mm-30 mm*30 mm.

[0102] In one embodiment, the magnetic flux of the first, second and third magnetic materials is in the range of 0.1-20 Gs, preferably, in the range of 0.3-10 Gs.

[0103] According to the above Fig.13The plasma device shown in the present application gives a specific application example. In this specific application example, the upper and lower electrode plates are both rectangles of 1800mm*900mm, and the spacing between the upper and lower electrode plates is 70mm; the sizes of the first magnetic material, the first side magnetic material, and the second side magnetic material, and the cross-sectional dimensions along the long sides of the rectangle are all 10mm*10mm; the distance between the first magnetic material and the adjacent electrode plate is 5mm; the distance between the first magnetic material and the adjacent short side of the electrode plate is 10mm; the distance between the first side magnetic material and the second side magnetic material and the side of the adjacent plasma reaction chamber is 5mm; the distance between the first side magnetic material and the second side magnetic material and the adjacent short side of the electrode plate is 10mm; the magnetic flux of the first magnetic material is 1Gs, and the magnetic flux of the first side magnetic material and the second side magnetic material is 5Gs; the first pole of the magnetic material is set to the N pole, and the second pole is set to the S pole, and the resulting magnetic field distribution is as shown in FIG. Fig.15 As shown ( Fig.15 The magnetic field distribution diagram of only one side of the reaction chamber is schematically shown, and the magnetic field distribution of the other side is the same as that of the side shown). Fig.15 It can be seen that the first and second side magnetic materials with higher magnetic flux at the side walls of the reaction chamber are coupled with the magnetic field generated by the first magnetic material, forming a strong local magnetic field on the side walls and edge corners of the chamber. This local magnetic field can effectively suppress the density of plasma at the edge of the chamber, and ultimately achieve the optimization of the uniformity of the plasma in the entire chamber during large-area CCP discharge.

[0104] The peak electron density of the plasma in the large-area CCP discharge process is 1.21E14m -3 For example, Fig.16 shows a schematic diagram of the electron density distribution in the plasma reaction chamber without adding magnetic material. Fig.17 Shows the application of the above Fig.13 The electron density distribution diagram in the plasma reaction chamber under the specific application example of the plasma device shown in the figure. In the figure, the horizontal axis and the vertical axis represent the size of the plasma reaction chamber, and the color change represents the electron density value of the plasma at the corresponding position. Fig.16 It can be seen that without adding magnetic material, the electron density has a peak at the edge of the chamber, while Fig.17 As shown, after the magnetic field coupling is performed using the first magnetic material and the side magnetic material, the strong magnetic field coupled at the edge of the chamber reduces the peak value of the electron density at the edge of the chamber to a certain extent, thereby suppressing the edge discharge effect to a certain extent.

[0105] Fig.18 The above-mentioned Fig.13The comparative analysis diagram of the radial electron density distribution curve in the center of the cavity under the specific application example of the plasma device shown. Fig.18 It can be seen that for the solution using the first magnetic material and the side magnetic material, the electron density peak value decreases in the edge area close to the reaction chamber, and the overall uniformity of the plasma in the chamber is improved.

[0106] In the third embodiment described above, by arranging side magnets outside the side of the plasma reaction chamber, the density of plasma at the edge of the chamber can be better suppressed, and ultimately the uniformity of the entire plasma chamber can be optimized during large-area CCP discharge.

[0107] In the above-mentioned embodiments of the present application, the diffusion and transport of electrons in the chamber are controlled by applying magnetic materials with different magnetic flux intensities, different magnetic field directions and different magnetic field arrangements at the edge of the plasma reaction chamber, thereby improving the plasma uniformity in the entire chamber. By regulating the magnetic field of the magnetic material, the influence of factors such as edge effect, standing wave effect and skin effect on the plasma density can be effectively suppressed, thereby improving the plasma uniformity of the whole plate, and then improving the effect of the whole plate coating, which is of great significance for improving the quality and output of semiconductor, photovoltaic and other products. In addition, this method will not have a significant impact on the overall characteristics of the plasma in the chamber, such as density, temperature, etc., and therefore, will not have a negative impact on the quality of the coating. Moreover, the present application does not need to change the original equipment and process, only needs to adjust the external magnetic material to effectively solve the plasma uniformity problem in the large-area CCP discharge process, which is simple and easy to implement.

[0108] It should be noted that, in the present application, "disposed on..." and "disposed below..." refer to being located above or below in the vertical direction, that is, directly above or directly below. For example, being disposed above the first edge region of the upper electrode plate refers to being disposed directly above the first edge region, and does not include being disposed above on the oblique side beyond the first edge region in the vertical direction. Similarly, "disposed outside..." also refers to being outside in the vertical direction, and does not include being outside on the oblique side. In addition, in the present application, the distance between the magnetic material and the side edge of the electrode plate refers to the distance between the magnetic material and the side edge in a direction parallel to the electrode plate or perpendicular to the electrode plate. For example, the distance between the first magnetic material and the first or second side edge refers to the distance between the magnetic material and the first or second side edge in a direction parallel to the electrode plate; the distance between the side magnetic material and the first side edge refers to the distance between the side magnetic material and the first side edge in a direction perpendicular to the electrode plate. In addition, in the present application, the "upper" electrode plate, the "lower" electrode plate, the "side", the "outside" of the side, etc., are all relative concepts, and are described based on the orientation of the upper electrode plate being on top and the lower electrode plate being on the bottom. Those skilled in the art should understand that when the placement orientation of the plasma reaction chamber changes, for example, when the upper electrode plate is placed on the side, the above orientation description also changes accordingly.

[0109] The present application also provides a plasma deposition device. Fig.19 FIG. 4 shows a plasma deposition device according to a fourth embodiment of the present application. Fig.19 As shown, the plasma deposition device includes the plasma device as described above, and also includes an outer cavity 8 surrounding the plasma device, and an air inlet 9 arranged on the outer cavity 8 for introducing a reaction gas. Optionally, the plasma deposition device may also include a feed copper ring 10, a Teflon insulating material 11 and a heating plate 12. In the plasma deposition device, the upper electrode plate 1 may be a metal electrode, which may be used as a shower plate of the plasma deposition device, and the lower electrode plate 2 may be a graphite plate, which may be a ground electrode. Fig.19 The plasma device in the plasma deposition equipment shown in the figure is the plasma device in the first embodiment of the present application. Those skilled in the art will appreciate that it may also be the plasma device in other embodiments.

[0110] In the above-mentioned embodiments or implementation modes of the present application, various embodiments or implementation modes are related to each other and can be referenced and cited to each other without violating general principles.

[0111] The above description is only an illustrative specific implementation manner of the present application. Without departing from the concept and principle of the present application, any equivalent changes and modifications made by any technician in the field should fall within the scope of protection of the present application.

Claims

1. A plasma device, characterized in that: include: A plasma reaction chamber, the plasma reaction chamber comprising an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, the upper electrode plate and the lower electrode plate each having at least one side; as well as A magnetic material, comprising: a first magnetic material arranged above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate in a length direction and below a first edge region of the lower electrode plate in a length direction along a first side direction of the lower electrode plate, wherein a dimension of the first magnetic material in a length direction is greater than a dimension in a width direction, the first edge region of the upper electrode plate is a region of the upper electrode plate close to the first side of the upper electrode plate, and the first edge region of the lower electrode plate is a region of the lower electrode plate close to the first side of the lower electrode plate.

2. The device according to claim 1, characterized in that The upper electrode plate and the lower electrode plate are both quadrilateral electrode plates, and the magnetic material also includes: a first magnetic material arranged above the second edge area of ​​the upper electrode plate along the second side of the upper electrode plate in the length direction and below the second edge area of ​​the lower electrode plate in the length direction along the second side of the lower electrode plate, wherein the first magnetic material is a strip magnetic material, the second edge area of ​​the upper electrode plate is an area of ​​the upper electrode plate close to the second side of the upper electrode plate, and the second edge area of ​​the lower electrode plate is an area of ​​the lower electrode plate close to the second side of the lower electrode plate.

3. The device according to claim 2, characterized in that The magnetic material also includes: a first magnetic material which is arranged above the third edge region and the fourth edge region of the upper electrode plate along the third side direction and the fourth side direction of the upper electrode plate respectively in the length direction and is arranged below the third edge region and the fourth edge region of the lower electrode plate respectively in the length direction along the third side direction and the fourth side direction of the lower electrode plate, wherein the third edge region and the fourth edge region of the upper electrode plate are respectively regions of the upper electrode plate close to the third side and the fourth side of the upper electrode plate, and the third edge region and the fourth edge region of the lower electrode plate are respectively regions of the lower electrode plate close to the third side and the fourth side of the lower electrode plate.

4. The device according to any one of claims 1 to 3, characterized in that The side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole.

5. The device according to claims 1-3, characterized in that The distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30 mm, and the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30 mm; The distance between the first magnetic material and the first side edge, the second side edge, the third side edge, or the fourth side edge adjacent to the first magnetic material is 2-40 mm.

6. The device according to claim 2 or 3, characterized in that: The distances between the four sides of the upper electrode plate or the lower electrode plate and the center position of the upper electrode plate or the lower electrode plate are the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther from the center position of the upper electrode plate or the lower electrode plate is greater.

7. The device according to claim 1, characterized in that The magnetic material further includes a second magnetic material whose length direction is respectively arranged on the first edge region of the upper electrode plate along the first side direction of the upper electrode plate and whose length direction is respectively arranged on the first side direction of the lower electrode plate below the first edge region of the lower electrode plate. The second magnetic material is closer to the center of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

8. The device according to claim 2, characterized in that The first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate that are not adjacent, the magnetic material also includes a second magnetic material which is arranged on the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate in length directions respectively, and is arranged below the first edge region and the second edge region of the lower electrode plate along the first side and the second side of the lower electrode plate in length directions respectively, and a third magnetic material which is arranged on the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate in length directions respectively, and is arranged below the first edge region and the second edge region of the lower electrode plate along the first side and the second side of the lower electrode plate in length directions respectively, the first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets; In each of the first edge region and the second edge region, the second magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material.

9. The device according to claim 8, characterized in that In each of the first edge region and the second edge region, the first magnetic material located above the upper electrode plate has a side facing the upper electrode plate as a first pole, and a side away from the upper electrode plate as a second pole, and the first magnetic material located below the lower electrode plate has a side away from the lower electrode plate as a first pole, and a side facing the lower electrode plate as a second pole; The side of the second magnetic material located above the upper electrode plate that faces away from the upper electrode plate is a first pole, and the side that faces the upper electrode plate is a second pole; the side of the second magnetic material located below the lower electrode plate that faces the lower electrode plate is a first pole, and the side that faces away from the lower electrode plate is a second pole; The side of the third magnetic material facing the second magnetic material is a first pole, and the side facing away from the second magnetic material is a second pole.

10. The device according to claim 8 or 9, characterized in that The distance between the first magnetic material, the second magnetic material and the third magnetic material and the upper electrode plate or the lower electrode plate adjacent thereto is 1-30 mm; The distance between the first magnetic material and the adjacent first side or second side is 2-40 mm, the distance between the first magnetic material and the adjacent second magnetic material is 5-50 mm, and the distance between the second magnetic material and the adjacent third magnetic material is 10-80 mm.

11. The device according to claim 8 or 9, characterized in that In a direction along a third side of the rectangular electrode plate perpendicular to the first side, a cross-sectional area of ​​the second magnetic material is the same as a cross-sectional area of ​​the first magnetic material, and a cross-sectional area of ​​the third magnetic material is greater than a cross-sectional area of ​​the first magnetic material.

12. The device according to claim 8 or 9, characterized in that Each of the first magnetic material, the second magnetic material and the third magnetic material is composed of a plurality of small magnets arranged along the first side edge or the second side edge.

13. The device according to claim 1, characterized in that The magnetic material further includes: a side magnetic material arranged in a side area of ​​the plasma reaction chamber along the first side direction in the length direction, wherein the side area of ​​the plasma reaction chamber is an area located outside a first side surface of the plasma reaction chamber, and the first side surface is a side surface of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side surface.

14. The device according to claim 13, characterized in that The magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

15. The device according to claim 2, characterized in that The first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate that are not adjacent, the magnetic material further comprising: a first side magnetic material whose length direction is respectively arranged in the first side region and the second side region of the plasma reaction chamber along the first side direction and the second side direction of the upper electrode plate, and a second side magnetic material whose length direction is respectively arranged in the third side region and the fourth side region of the plasma reaction chamber along the first side direction and the second side direction of the lower electrode plate, wherein the first side region is an area located outside the first side of the plasma reaction chamber and between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate, and the second side region is an area located outside the second side of the plasma reaction chamber and between the lateral extension regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate. The third side region is an area located outside the first side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The fourth side region is an area located outside the second side of the plasma reaction chamber and between the lateral extension areas of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The first side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode plate and corresponding to the first side. The second side is a side of the plasma reaction chamber located between the upper electrode plate and the lower electrode and corresponding to the second side. The first magnetic material, the first side magnetic material and the second side magnetic material are all permanent magnets.

16. The device according to claim 15, characterized in that The magnetic flux of the first side magnetic material and the second side magnetic material are both higher than or equal to the magnetic flux of the first magnetic material.

17. The device according to claim 15 or 16, characterized in that The first magnetic material located above the upper electrode plate has a side facing the upper electrode plate as a first pole, and a side away from the upper electrode plate as a second pole; the first magnetic material located below the lower electrode plate has a side away from the lower electrode plate as a first pole, and a side facing the lower electrode plate as a second pole; The side of the first side magnetic material facing away from the plasma reaction chamber is the first pole, and the side facing the plasma reaction chamber is the second pole; the side of the second side magnetic material facing the plasma reaction chamber is the first pole, and the side facing away from the plasma reaction chamber is the second pole.

18. The device according to claim 15 or 16, characterized in that The distance between the first magnetic material and the adjacent upper electrode plate or lower electrode plate is 1-30 mm, and the distance between the first side magnetic material and the second side magnetic material and the adjacent side of the plasma reaction chamber is 1-40 mm. The distance between the first magnetic material and the first side edge or the second side edge adjacent thereto is 2-40 mm, and the distance between the first side edge magnetic material and the second side edge magnetic material and the first side edge or the second side edge adjacent thereto is 2-40 mm.

19. The device according to claim 15 or 16, characterized in that In a direction along a third side of the rectangular electrode plate that is perpendicular to the first side, the cross-sectional areas of the first side magnetic material and the second side magnetic material are the same as the cross-sectional area of ​​the first magnetic material.

20. The device according to claim 2 or 3 or 7 or 13, characterized in that: The magnetic material is an electromagnet, which is used to pass direct current or alternating current during the process of generating plasma.

21. The device according to claim 1, characterized in that The upper electrode plate and the lower electrode plate are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the spacing between the upper electrode plate and the lower electrode plate is 10-100 mm.

22. A plasma deposition apparatus comprising: The plasma device according to any one of claims 1 to 21; an outer cavity surrounding the plasma device; as well as The gas inlet is arranged on the outer cavity and is used for introducing the reaction gas.

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