Plasma process device

By designing a slidably coupled plasma generation unit, the difficulties in positioning and maintenance of existing plasma process devices in semiconductor processes are solved, and process adjustment and efficiency improvement are achieved.

CN119943638APending Publication Date: 2025-05-06SHANGHAI CHUANGYI MICRO MATERIALS TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510111866.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-24
Publication Date
2025-05-06

AI Technical Summary

Technical Problem

The existing plasma process devices are large in size, heavy in weight, or are fragile and inconvenient to move, and it is difficult to meet the fast and precise positioning and maintenance requirements of plasma generation units in semiconductor processes.

Method used

A plasma process device is designed, wherein the plasma generation unit is slidably coupled or separated from the first pipe in the sliding direction, and can realize fast and precise movement through the slide rail, which facilitates the adjustment of the distance between the plasma generation unit and the working unit, and realizes process adjustment and maintenance.

Benefits of technology

The device is simple to operate, is easy to process adjustment, can realize the rapid and precise positioning and maintenance of the plasma generation unit, and improves the flexibility and efficiency of the process.

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Abstract

The embodiment of the invention relates to a plasma process device which comprises one or more plasma generating units, and the plasma generating units are slidably coupled with or separated from corresponding first pipelines used for conveying working objects in the sliding direction. The embodiment of the invention further relates to processing equipment which comprises the plasma process device. The plasma process device provided by the embodiment of the invention can effectively solve the problems encountered in the traditional technology.
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Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and more specifically, to a plasma processing device. Background Art

[0002] With the rapid development of science and technology, the demand for plasma process devices in the fields of material science, electronic engineering, optical manufacturing, etc. is increasing. Some devices are large in size, heavy in weight, or fragile and inconvenient to move. Especially for some semiconductor processes (such as coating, etching, etc.), it is necessary to repeatedly, quickly and accurately locate the components to facilitate the maintenance or switching of plasma process devices, so that the generated one or more gases can be input into the working unit and act on the target to generate the required substances. Existing plasma process devices are difficult to meet some new functional requirements. Summary of the invention

[0003] One of the purposes of the present application is to provide a plasma processing device to solve at least one problem existing in the prior art.

[0004] According to a first aspect of the present application, a plasma processing device includes one or more plasma generating units, wherein the plasma generating units are slidably coupled to or separated from corresponding first pipes for conveying workpieces in a sliding direction.

[0005] In some embodiments, the plasma generating unit is coupled to or separated from the first pipeline by a slide rail.

[0006] In some embodiments, the plasma processing apparatus further includes a second pipeline located between the plasma generating unit and the first pipeline.

[0007] In some embodiments, the plurality of plasma generating units are disposed on the same circumference of concentric circles.

[0008] In some embodiments, the plasma generating unit can be slidably moved toward or away from the center of the circle.

[0009] According to a second aspect of the present application, a processing equipment includes the aforementioned plasma process device.

[0010] The plasma process device proposed in this application is simple to operate and convenient for process adjustment. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 Schematic diagram of a plasma processing device according to some embodiments of the present application.

[0012] Figure 2 It is a schematic diagram of processing equipment according to some embodiments of the present application. DETAILED DESCRIPTION

[0013] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0014] The following describes the implementation methods of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The present application can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work belong to the scope of protection of the present application.

[0015] Embodiments of the present application will be described in detail below. Throughout the present application specification, as used herein, the terms "roughly", "substantially", "substantially" and "approximately" are used to describe and illustrate small changes. When used in conjunction with an event or situation, the term may refer to an example in which an event or situation occurs precisely and an example in which an event or situation occurs very approximately. For example, when used in conjunction with a numerical value, the term may refer to a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values ​​may be considered “substantially” the same if the difference between them is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%).

[0016] In this specification, unless otherwise specified or limited, relative terms such as "central", "longitudinal", "lateral", "front", "rear", "right", "left", "inner", "outer", "lower", "higher", "horizontal", "vertical", "above", "below", "above", "below", "top", "bottom" and their derivative terms (such as "horizontally", "downwardly", "upwardly", etc.) should be interpreted as referring to the directions described in the discussion or depicted in the drawings. These relative terms are only used for convenience of description and do not require that the present application be constructed or operated in a specific direction.

[0017] In addition, sometimes amounts, ratios and other numerical values ​​are presented in range format herein. It should be understood that such range format is for convenience and brevity, and should be flexibly understood to include not only the numerical values ​​explicitly specified as range limits, but also all individual numerical values ​​or sub-ranges encompassed within the range, as if each numerical value and sub-range were explicitly specified.

[0018] Furthermore, for ease of description, “first”, “second”, “third”, etc. may be used herein to distinguish different components in one figure or a series of figures. “First”, “second”, “third”, etc. are not intended to describe the corresponding components.

[0019] In the embodiments of the present application, unless otherwise specified or limited, the terms "set", "connected", "coupled", "fixed" and similar terms are used broadly, and those skilled in the art may understand that the above terms may be, for example, fixed connection, detachable connection or integrated connection according to the specific circumstances; it may also be a mechanical connection or an electrical connection; it may also be a direct connection or an indirect connection through an intermediate structure; it may also be internal communication between two components.

[0020] Some embodiments of the present application provide a plasma processing device, which includes one or more plasma generating units, wherein the plasma generating units can be slidably coupled to or separated from corresponding first pipes for conveying workpieces in a sliding direction.

[0021] The term “coupled” in the present application may be understood as one element / component / unit being directly or indirectly connected to another element / component / unit, or the two being directly or indirectly connected.

[0022] Figure 1 Schematic diagram of a plasma processing device according to some embodiments of the present application.

[0023] like Figure 1 As shown, the plasma processing device includes one or more plasma generating units 2000, Figure 1 Three plasma generating units are shown, but it is not limited thereto and may be one or more. The plasma generating unit 2000 may be slidably coupled or separated with a corresponding first pipe (not shown) for conveying a workpiece in respective sliding directions (e.g., d1, d2, or d3). The first pipe may be connected to a working unit to input the workpiece into the working unit.

[0024] The plasma process device proposed in the present application can perform separate maintenance on the plasma generating unit. Since the plasma generating unit can be coupled or separated from the first pipe in the sliding direction, it is convenient to adjust the distance between the plasma generating unit and the first pipe. For example, it is convenient to add a second pipe to facilitate the adjustment of the distance between the plasma generating unit and the working unit, thereby adjusting the performance of the workpiece, such as the activity of the plasma, and thus adjusting the process conditions to meet different process requirements.

[0025] like Figure 1 As shown, each plasma generating unit can be evenly arranged on the same plane P0, the three plasma generating units can slide back and forth in three directions (d1, d2 and d3) respectively, and the multiple plasma generating units can be arranged roughly around the center O of the concentric circles. The multiple plasma generating units can be arranged on the circumference of the same circle and can be evenly spaced.

[0026] According to some embodiments of the present application, the plasma generating unit can slide towards or away from the center O to achieve coupling and separation with the first pipe, which is convenient for controlling the time when the workpiece enters the working unit through the plasma generating unit, thereby realizing various modes of processing technology, such as using multiple plasma generating units simultaneously, in sequence, cross-using, etc., so as to match a variety of processes.

[0027] The first pipeline can be coupled to the working unit through a cover member, such as Figure 1 As shown, the plane where the cover member 300 is located may be substantially parallel to or coincide with the plane P0.

[0028] In addition, when the processing technology is switched, the plasma generating unit may need to be replaced. By setting a sliding device, the precise positioning of the plasma generating unit and the rapid coupling with the target unit can be simply achieved, thereby facilitating the rapid switching of other plasma generating units and improving work efficiency.

[0029] For example, Figure 1 When the plasma generating unit in the direction of d1 needs to be replaced, it is only necessary to slide the plasma generating unit in the direction of d1 in a direction away from the center O, so that the plasma generating unit is separated from the corresponding first pipe; if the plasma generating unit in the direction of d2 needs to be used, it is only necessary to slide the plasma generating unit in the direction of d2 in a direction close to the center O, so that the plasma generating unit is coupled to the corresponding first pipe, so as to achieve the purpose of replacing the plasma generating unit, and the operation is fast and convenient.

[0030] According to some embodiments of the present application, a sliding device can be provided to enable the plasma generating unit to move slidably, for example, a slide rail can be provided, and a slidable connector installed on the plasma generating unit is coupled to the slide rail, so that the plasma generating unit can move quickly and repeatedly, and is convenient for coupling or separation with the first pipe. The excited gas can be sent to the working unit through the first pipe to act on the object to be processed (such as a substrate) placed in the working unit, for example, coating or etching the object to be processed.

[0031] The gas generating device proposed in the present application facilitates rapid and accurate positioning by providing a sliding device, is easy to operate, and is convenient for adjusting the position to achieve rapid coupling or separation with a target unit.

[0032] Some further embodiments of the present application provide a processing equipment, which includes the aforementioned plasma process device.

[0033] Figure 2 It is a schematic diagram of processing equipment according to some embodiments of the present application.

[0034] like Figure 2 As shown, the processing equipment provided by some embodiments of the present application includes a working unit 301, which includes a first end 310 and a second end 320; a first operating unit 101, which includes a first cover part 110 for connecting to the first end 310 of the working unit 301; a second operating unit 201, which includes a second cover part 210 for connecting to the second end 320 of the working unit 301, and the first operating unit 101 includes a plasma generating unit 3000, such as the aforementioned plasma process device, for providing excited gas to the working unit.

[0035] The processing equipment may include semiconductor processing equipment, such as semiconductor processing equipment used for processes such as coating, etching, etc. The working unit may be a reaction chamber, in which an object to be processed (not shown in the figure) may be placed.

[0036] According to some embodiments of the present application, the reaction chamber may include a quartz tube in which a substrate to be processed may be placed. Multiple substrates may be placed into the reaction chamber via a carrier to facilitate placing the substrates in or taking them out of the reaction chamber.

[0037] The two ends of the reaction chamber can be connected to the operating unit to input or discharge the workpiece acting on the substrate. According to the processing requirements, the working unit can be sealed and connected to the operating unit, for example, the two ends of the working unit can be sealed and connected to the operating unit through a cover component.

[0038] According to some embodiments of the present application, the reaction chamber can be used to generate a chemical reaction, and the gas can be introduced into the reaction chamber through a plasma process device to generate the desired chemical reaction, thereby acting on the object to be processed in the reaction chamber to achieve the purpose of processing. When the object to be processed is a substrate, in order to evenly distribute the gas in the reaction chamber, the reaction chamber can be set as a cylindrical quartz tube.

[0039] The processing equipment proposed in this application can realize rapid switching of different processes.

[0040] The technical content and technical features of this application have been disclosed as above, but those skilled in the art may still make various substitutions and modifications based on the teachings and disclosures of this application without departing from the spirit of this application. Therefore, the protection scope of this application should not be limited to the contents disclosed in the embodiments, but should include various substitutions and modifications without departing from this application, and be covered by the claims of this application.

Claims

1. A plasma processing device, comprising one or more plasma generating units, wherein the plasma generating units are slidably coupled to or separated from corresponding first pipes for conveying workpieces in a sliding direction. 2 . The plasma processing apparatus according to claim 1 , wherein the plasma generating unit is coupled to or separated from the first pipeline through a slide rail. 3 . The plasma processing apparatus according to claim 1 , further comprising a second pipe, wherein the second pipe is located between the plasma generating unit and the first pipe. 4 . The plasma processing apparatus according to claim 1 , wherein the plurality of plasma generating units are arranged on the same circumference of concentric circles. 5 . The plasma processing device according to claim 4 , wherein the plasma generating unit is slidable to move closer to or farther from the center of the circle.

6. A processing equipment, comprising the plasma processing device according to any one of claims 1 to 5.