Cleaning method of semiconductor blocking control piece

Abstract

The invention provides a cleaning method of a semiconductor gear control wafer. The cleaning method comprises the following steps: S1, performing first cleaning on the gear control wafer to remove silicon oxycarbide and impurity particles on the gear control wafer; s2, cleaning the gear control wafer by adopting a DHF solution so as to remove a natural oxide layer on the gear control wafer; s3, an ozone aqueous solution is adopted to clean the gear control piece, so that the ozone aqueous solution reacts with carbon substances on the surface of the gear control piece to generate oxide, and carbon substance residues on the surface of the gear control piece are removed; and S4, performing second cleaning on the gear control wafer so as to remove impurity particles formed by the gear control wafer in the step S2 and the step S3. The method solves the problems that the gear control wafer is influenced by a SiOCN growth process, residual C elements on the surface of the gear control wafer can diffuse into a silicon wafer, after the gear control wafer is cleaned by an HF solution, C residues exist on the surface of the gear control wafer, the number of impurity particles exceeds the standard, and the gear control wafer cannot be continuously reused as the gear control wafer.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a method for cleaning a semiconductor baffle. Background Art

[0002] In order to improve product quality and monitor process accuracy and yield during the formal production process, it is necessary to insert control chips during the production of wafer positive films to increase the monitoring frequency. In the 65nm process, 6 control chips are required for every 10 positive films, and in the 28nm and below processes, 15-20 control chips are required for every 10 positive films. Since the control chips are consumed in large quantities as auxiliary production materials, the wafer factory will reuse them after polishing and grinding. There is an upper limit to the number of times the control chips can be reused. Once the threshold value is exceeded, they can only be used as photovoltaic-grade silicon wafers. The control chips are special. The control chips used in some special process technologies are directly scrapped and cannot be reused. Recyclable control chips are also called renewable silicon wafers.

[0003] With the continuous development of semiconductor technology, silicon oxycarbon nitride (SiOCN) materials have been widely used in advanced semiconductor processes due to their advantages of low K value and etching resistance, in order to reduce parasitic capacitance, improve chip performance and increase yield. The baffle plate is affected by the SiOCN growth process, and the residual C element on the surface of the baffle plate will diffuse into the silicon wafer. Since the etching rate of HF to Si is very low, the baffle plate cannot be effectively cleaned with HF solution. After cleaning the baffle plate with HF solution, there will be C residue on the surface of the baffle plate, and the number of impurity particles exceeds the standard, which makes it impossible to continue to reuse as a baffle plate. It is directly downgraded or scrapped after one use, and the production cost is high.

[0004] Therefore, it is necessary to provide a novel method for cleaning a semiconductor baffle to solve the above problems in the prior art. Summary of the invention

[0005] The purpose of the present invention is to provide a method for cleaning a semiconductor baffle plate to solve the problem that the baffle plate is affected by the SiOCN growth process, and the residual C element on the surface of the baffle plate diffuses into the silicon wafer. After the baffle plate is cleaned with an HF solution, C will remain on the surface of the baffle plate, and the number of impurity particles exceeds the standard, resulting in the baffle plate being unable to be reused as a baffle plate.

[0006] To achieve the above object, the cleaning method of the semiconductor baffle plate of the present invention comprises the following steps:

[0007] S1, performing a first cleaning on the blocking plate to remove carbon nitride oxide silicon and impurity particles on the blocking plate;

[0008] S2, using a DHF solution to clean the control plate to remove the natural oxide layer on the control plate;

[0009] S3, cleaning the baffle plate with an ozone solution, so that the ozone solution reacts with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate;

[0010] S4, performing a second cleaning on the blocking plate to remove foreign particles formed on the blocking plate in the steps S2 and S3.

[0011] The beneficial effects of the semiconductor baffle cleaning method of the present invention are as follows: the baffle is cleaned with a DHF solution in step S2 to remove the natural oxide layer on the baffle, which is conducive to the ozone in the ozone aqueous solution reacting with the carbon material on the surface of the baffle to generate oxides in step S3; the baffle is cleaned with an ozone aqueous solution in step S3 to make the ozone aqueous solution react with the carbon material on the surface of the baffle to generate oxides, thereby removing the carbon material residue on the surface of the baffle, and effectively solving the problem of carbon material residue on the surface of the baffle; and after the second cleaning in step S4, the problem of impurity particles caused by removing the carbon material on the surface of the baffle can be solved, so that the baffle meets the standard for recycling.

[0012] Preferably, the step of using an ozone aqueous solution to clean the baffle plate in step S3 includes: spraying the ozone aqueous solution on the front and back of the baffle plate, and controlling the spraying rate of the ozone aqueous solution to be 1.5-2L / min. Its beneficial effect is that the ozone aqueous solution is sprayed to clean the baffle plate, which is more conducive to the ozone in the ozone aqueous solution to react with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate, and the ozone aqueous solution is sprayed on the high-speed rotating baffle surface through the nozzle and discharged from the edge of the baffle plate. The ozone aqueous solution flowing through the surface of the baffle plate is new, avoiding secondary pollution.

[0013] Preferably, the step of using an ozone aqueous solution to clean the baffle plate in step S3 includes: controlling the concentration of the ozone aqueous solution used to clean the baffle plate to be no less than 30 ppm, and the cleaning time to be 60 to 120 seconds. The beneficial effect is that the ozone in the ozone aqueous solution can react with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate.

[0014] Preferably, the step of using DHF solution to clean the baffle plate in step S2 includes: spraying the DHF solution on the front and back of the baffle plate, and controlling the spraying rate of the DHF solution to be 1.5-2 L / min. Its beneficial effect is that it is conducive to removing the natural oxide layer on the baffle plate, so that the ozone solution can better react with the carbon material on the surface of the baffle plate, and the DHF solution is sprayed to clean the baffle plate, avoiding secondary pollution.

[0015] Preferably, the step of using DHF solution to clean the baffle plate in step S2 includes: controlling the DHF solution for cleaning the baffle plate to be a mixture of 49% HF solution by mass and water in a volume ratio of 1:50 to 1:100, and controlling the cleaning time to be no more than 60 seconds. Its beneficial effect is that it is conducive to removing the natural oxide layer on the baffle plate, so that the ozone aqueous solution can better react with the carbon material on the surface of the baffle plate.

[0016] Preferably, the step of performing a second cleaning on the baffle plate in step S4 includes: spraying SC1 solution and SC2 solution on the baffle plate in sequence, and controlling the spraying rates of the SC1 solution and the SC2 solution to be 1.5-2 L / min. Its beneficial effect is that it is conducive to removing the impurity particles formed on the baffle plate in step S2 and step S3, that is, after cleaning in the acid tank, the impurity particle problem caused by removing carbon substances on the surface of the baffle plate can be solved, so that the baffle plate meets the recycling standard, and the SC1 solution and the SC2 solution are sprayed to clean the baffle plate, avoiding secondary pollution.

[0017] Preferably, the step of sequentially spraying the SC1 solution and the SC2 solution on the baffle plate includes: controlling the SC1 solution for cleaning the baffle plate to be a mixture of 29% ammonia water, 31% hydrogen peroxide and water in a volume ratio of 1:2:50 to 1:2:100, and controlling the spraying time of the SC1 solution to be 60 to 120 seconds. The beneficial effect is that it is conducive to removing the impurity particles formed on the baffle plate in the steps S2 and S3.

[0018] Preferably, the step of sequentially spraying the SC1 solution and the SC2 solution on the baffle plate includes: controlling the SC2 solution for cleaning the baffle plate to be a mixture of 29% hydrochloric acid, 31% hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100 by mass, and controlling the spraying time of the SC2 solution to be 10 to 30 seconds. The beneficial effect is that it is helpful to remove the impurity particles formed on the baffle plate in the steps S2 and S3.

[0019] Preferably, the step of performing the first cleaning on the baffle plate in step S1 includes: using hydrofluoric acid solution, SC1 solution and SC2 solution in sequence in a water tank to clean the baffle plate, and controlling the rate of liquid circulation in the water tank to be 2-5 L / min. The beneficial effect is that the hydrofluoric acid solution, SC1 solution and SC2 solution circulate in the water tank to clean the baffle plate, so that the baffle plate can be cleaned more comprehensively, thereby removing carbon nitride silicon oxide and impurity particles on the baffle plate.

[0020] Preferably, the step of sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank includes: controlling the time for cleaning the baffle plate with the hydrofluoric acid solution to be 40 to 60 minutes; controlling the time for cleaning the baffle plate with the SC1 solution to be 5 to 10 minutes; and controlling the time for cleaning the baffle plate with the SC2 solution to be 5 to 10 minutes. The beneficial effect is that it is conducive to removing carbon nitride oxide silicon and impurity particles on the baffle plate.

[0021] Preferably, the step of sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank includes: controlling the SC1 solution for cleaning the baffle plate to be a mixture of 29% ammonia water, 31% hydrogen peroxide and water in a volume ratio of 1:2:50 to 1:2:100 by mass; controlling the SC2 solution for cleaning the baffle plate to be a mixture of 29% hydrochloric acid, 31% hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100 by mass. Its beneficial effect is that it is conducive to removing carbon nitride oxide silicon and impurity particles on the baffle plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The schematic diagram of the cleaning method of the semiconductor baffle plate according to the embodiment of the present invention is as follows Figure 1 ;

[0023] Figure 2 This is a test chart showing the residual impurity particles after the baffle plate is cleaned with HF solution;

[0024] Figure 3 This is a test chart showing the residual impurity particles after 25 baffle plates were cleaned with HF solution;

[0025] Figure 4 This is a schematic diagram of the RSM morphology scan after the control plate is cleaned with HF solution;

[0026] Figure 5 This is a schematic diagram of the component test results of the control plate after being cleaned with HF solution;

[0027] Figure 6 The schematic diagram of the process of cleaning the semiconductor baffle plate of the first embodiment of the present invention is as follows Figure 2 ;

[0028] Figure 7 This is a test diagram of the residual impurity particles after the control plate is cleaned by the cleaning method of Example 1;

[0029] Figure 8 This is a test chart showing the residual impurity particles after 25 baffle plates were cleaned using the cleaning method of Example 1;

[0030] Fig. 9 The RSM morphology scan diagram of the control plate after cleaning using the cleaning method of Example 1 Figure 1 ;

[0031] Fig.10 The RSM morphology scan diagram of the control plate after cleaning using the cleaning method of Example 1 Figure 2 . DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0033] In order to overcome the problems existing in the prior art, an embodiment of the present invention provides a method for cleaning a semiconductor baffle plate to solve the problem that the baffle plate is affected by the SiOCN growth process, and the residual C element on the surface of the baffle plate will diffuse into the silicon wafer. After the baffle plate is cleaned with HF solution, there will be C residue on the surface of the baffle plate, and the number of impurity particles exceeds the standard, resulting in the problem that it cannot be reused as a baffle plate.

[0034] Figure 1 The schematic diagram of the cleaning method of the semiconductor baffle plate according to the embodiment of the present invention is as follows Figure 1 .

[0035] In some embodiments of the present invention, the semiconductor baffle cleaning method is as follows: Figure 1 , including the following steps:

[0036] S1, performing a first cleaning on the blocking plate to remove carbon nitride oxide silicon and impurity particles on the blocking plate;

[0037] S2, using a DHF solution to clean the control plate to remove the natural oxide layer on the control plate;

[0038] S3, cleaning the baffle plate with an ozone solution, so that the ozone solution reacts with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate;

[0039] S4, performing a second cleaning on the blocking plate to remove foreign particles formed on the blocking plate in the steps S2 and S3.

[0040] Specifically, the blocking plate is cleaned with a DHF solution in step S2 to remove the natural oxide layer on the blocking plate, which is conducive to the reaction of ozone in the ozone aqueous solution with the carbon material on the surface of the blocking plate to generate oxides in step S3; the blocking plate is cleaned with an ozone aqueous solution in step S3 to make the ozone aqueous solution react with the carbon material on the surface of the blocking plate to generate oxides, thereby removing the residual carbon material on the surface of the blocking plate, effectively solving the problem of residual carbon material on the surface of the blocking plate; and after the second cleaning in step S4, the problem of impurity particles caused by removing the carbon material on the surface of the blocking plate can be solved, so that the blocking plate meets the standard for recycling.

[0041] The DHF solution described in the present invention is a diluted hydrofluoric acid solution.

[0042] In some embodiments of the present invention, the step of performing a first cleaning on the baffle plate in step S1 includes: sequentially using a hydrofluoric acid solution, an SC1 solution, and an SC2 solution in a water tank to clean the baffle plate, and controlling the rate of liquid circulation in the water tank to be 2 to 5 L / min. The hydrofluoric acid solution, the SC1 solution, and the SC2 solution circulate in the water tank to clean the baffle plate, so that the baffle plate can be cleaned more comprehensively, thereby removing carbon nitride oxide silicon and impurity particles on the baffle plate.

[0043] In some specific embodiments of the present invention, the step of performing a first cleaning on the baffle plate in step S1 includes: sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank, and controlling the circulation rate of the liquid in the water tank to be any one of 2.5L / min, 3L / min, 4L / min and 5L / min.

[0044] In the present invention, the hydrofluoric acid solution is a solution containing 49% hydrofluoric acid by mass.

[0045] In some specific embodiments of the present invention, the step of performing a first cleaning on the control plate in step S1 includes:

[0046] S11, washing the control plate with a hydrofluoric acid solution in a water tank to remove the silicon oxycarbonitride on the control plate;

[0047] S12, washing the control plate with SC1 solution in a water tank to remove foreign particles on the control plate;

[0048] S13, washing the control plate with SC2 solution in a water tank to remove metal particles on the control plate.

[0049] In some specific embodiments of the present invention, in the step S11, the control plate is cleaned with the hydrofluoric acid solution at room temperature.

[0050] In some specific embodiments of the present invention, in step S12, the SC1 solution is used to clean the control plate at a temperature of 25-65° C.

[0051] In some specific embodiments of the present invention, in step S13, the SC2 solution is used to clean the control plate at room temperature.

[0052] In some embodiments of the present invention, the step of sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank includes: controlling the time for cleaning the baffle plate with the hydrofluoric acid solution to be 40 to 60 minutes; controlling the time for cleaning the baffle plate with the SC1 solution to be 5 to 10 minutes; and controlling the time for cleaning the baffle plate with the SC2 solution to be 5 to 10 minutes, which is beneficial to removing carbon nitride silicon oxide and impurity particles on the baffle plate.

[0053] In some specific embodiments of the present invention, the step of sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank includes: controlling the time for cleaning the baffle plate with the hydrofluoric acid solution to be any one of 45 minutes, 50 minutes and 55 minutes; controlling the time for cleaning the baffle plate with the SC1 solution to be any one of 7 minutes, 8 minutes and 9 minutes; controlling the time for cleaning the baffle plate with the SC2 solution to be any one of 7 minutes, 8 minutes and 9 minutes.

[0054] In some embodiments of the present invention, the step of sequentially using hydrofluoric acid solution, SC1 solution and SC2 solution to clean the baffle plate in a water tank includes: controlling the SC1 solution for cleaning the baffle plate to be a mixture of 29% ammonia water, 31% hydrogen peroxide and water in a volume ratio of 1:2:50 to 1:2:100; controlling the SC2 solution for cleaning the baffle plate to be a mixture of 29% hydrochloric acid, 31% hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100, which is beneficial to removing carbon nitride silicon oxide and impurity particles on the baffle plate.

[0055] In some embodiments of the present invention, the step of using the DHF solution to clean the baffle plate in step S2 includes: spraying the DHF solution on the front and back sides of the baffle plate, and controlling the spraying rate of the DHF solution to be 1.5 to 2 L / min, which is beneficial to removing the natural oxide layer on the baffle plate so that the ozone aqueous solution can better react with the carbon material on the surface of the baffle plate, and the DHF solution is sprayed to clean the baffle plate to avoid secondary pollution.

[0056] In some specific embodiments of the present invention, the step of using the DHF solution to clean the control plate in step S2 includes: controlling the spraying rate of the DHF solution to be any one of 1.6 L / min, 1.7 L / min and 1.9 L / min.

[0057] In some embodiments of the present invention, the step of using DHF solution to clean the baffle plate in step S2 includes: controlling the DHF solution for cleaning the baffle plate to be a mixture of 49% HF solution by mass and water in a volume ratio of 1:50 to 1:100, and controlling the cleaning time to not exceed 60 seconds, which is beneficial to removing the natural oxide layer on the baffle plate so that the ozone aqueous solution can better react with the carbon material on the surface of the baffle plate.

[0058] In some specific embodiments of the present invention, the step of using a DHF solution to clean the baffle plate in step S2 includes: controlling the DHF solution for cleaning the baffle plate to be a mixture of a 49% by mass HF solution and water in a volume ratio of any one of 1:60, 1:75, 1:85 and 1:90, and controlling the cleaning time to be any one of 10S, 20S, 35S and 55S.

[0059] In some specific embodiments of the present invention, in step S2, the DHF solution is sprayed on the front and back sides of the control plate at room temperature.

[0060] In some embodiments of the present invention, the step of using an ozone aqueous solution to clean the baffle plate in step S3 includes: spraying the ozone aqueous solution on the front and back of the baffle plate, and controlling the spraying rate of the ozone aqueous solution to be 1.5 to 2 L / min. The ozone aqueous solution is sprayed to clean the baffle plate, which is more conducive to the ozone in the ozone aqueous solution to react with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate, and the ozone aqueous solution is sprayed on the high-speed rotating baffle surface through the nozzle and discharged from the edge of the baffle plate. The ozone aqueous solution flowing through the surface of the baffle plate is new, avoiding secondary pollution.

[0061] In some embodiments of the present invention, the step of using an ozone aqueous solution to clean the control plate in step S3 includes: controlling the spraying rate of the ozone aqueous solution to be any one of 1.6 L / min, 1.7 L / min and 1.9 L / min.

[0062] In some embodiments of the present invention, the step of using an ozone aqueous solution to clean the baffle plate in step S3 includes: controlling the concentration of the ozone aqueous solution for cleaning the baffle plate to be no less than 30 ppm, and the cleaning time to be 60 to 120 seconds, which is conducive to the ozone in the ozone aqueous solution to react with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the residual carbon material on the surface of the baffle plate.

[0063] In some specific embodiments of the present invention, the step of using an ozone aqueous solution to clean the baffle plate in step S3 includes: controlling the concentration of the ozone aqueous solution for cleaning the baffle plate to be any one of 5ppm, 10ppm, 18ppm, 23ppm and 28ppm, and the cleaning time to be any one of 70S, 80S, 95S, 100S, 110S and 117S.

[0064] In some specific embodiments of the present invention, in step S3, the ozone aqueous solution is sprayed on the front and back sides of the control plate at room temperature.

[0065] In some embodiments of the present invention, the step of performing a second cleaning on the baffle plate in step S4 includes: spraying SC1 solution and SC2 solution on the baffle plate in sequence, and controlling the spraying rates of the SC1 solution and the SC2 solution to be 1.5-2 L / min, which is beneficial to removing the impurity particles formed on the baffle plate in the steps S2 and S3. That is, after cleaning in the acid tank, the problem of impurity particles caused by removing carbon materials on the surface of the baffle plate can be solved, so that the baffle plate meets the standards for recycling, and the SC1 solution and the SC2 solution are sprayed to clean the baffle plate to avoid secondary pollution.

[0066] In some specific embodiments of the present invention, the step of performing a second cleaning on the control plate in step S4 includes: controlling the spraying rates of the SC1 solution and the SC2 solution to be any one of 1.6 L / min, 1.7 L / min and 1.9 L / min.

[0067] In some specific embodiments of the present invention, the step of performing a second cleaning on the control plate in step S4 includes:

[0068] S41, spraying SC1 solution on the front and back of the control plate to remove foreign particles formed on the control plate in the steps S2 and S3;

[0069] S42, spraying SC2 solution on the front surface of the blocking plate to remove metal particles formed on the blocking plate in the steps S2 and S3.

[0070] In some specific embodiments of the present invention, in step S41, SC1 solution is sprayed on the front and back sides of the control plate at room temperature.

[0071] In some specific embodiments of the present invention, in step S42, SC2 solution is sprayed on the front surface of the control plate at room temperature.

[0072] In some embodiments of the present invention, the step of sequentially spraying SC1 solution and SC2 solution on the baffle plate includes: controlling the SC1 solution for cleaning the baffle plate to be a mixture of 29% by mass ammonia water, 31% by mass hydrogen peroxide and water in a volume ratio of 1:2:50, and controlling the spraying time of the SC1 solution to be 60 to 120 seconds, which is beneficial to removing impurity particles formed on the baffle plate in the steps S2 and S3.

[0073] In some embodiments of the present invention, the step of sequentially spraying SC1 solution and SC2 solution on the baffle plate includes: controlling the SC2 solution for cleaning the baffle plate to be a mixture of 29% by mass hydrochloric acid, 31% by mass hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100, and controlling the spraying time of the SC2 solution to be 10 to 30 seconds, which is beneficial to removing impurity particles formed on the baffle plate in the steps S2 and S3.

[0074] Figure 2 This is a test chart showing the residual impurity particles after the baffle plate is cleaned with HF solution; Figure 3 This is a test chart showing the residual impurity particles after 25 baffle plates were cleaned with HF solution; Figure 4 This is a schematic diagram of the RSM morphology scan after the control plate is cleaned with HF solution; Figure 5 This is a schematic diagram of the component test results of the control plate after cleaning with HF solution.

[0075] Comparative Example 1: Using hydrofluoric acid solution to clean the control plate. After the control plate is cleaned with HF solution, the control plate has a large amount of impurity particles remaining (such as Figure 2 and Figure 3 As shown), there are obvious defects on the surface of the baffle (such as Figure 4 ), and through Figure 5 It can be seen that carbon element was detected in the composition test of the baffle plate, indicating that there are C residues on the surface of the baffle plate.

[0076] Figure 6 The schematic diagram of the process of cleaning the semiconductor baffle plate of the first embodiment of the present invention is as follows Figure 2 .

[0077] Embodiment 1: The cleaning method of the semiconductor baffle plate, referring to Figure 6 , including the following steps:

[0078] S101, washing the control plate with a hydrofluoric acid solution in a water tank to remove the silicon oxycarbonitride on the control plate;

[0079] S102, washing the control plate with SC1 solution in a water tank to remove foreign particles on the control plate;

[0080] S103, washing the control plate with SC2 solution in a water tank to remove metal particles on the control plate;

[0081] S104, spraying the DHF solution on the front and back sides of the control plate to remove the natural oxide layer on the control plate;

[0082] S105, spraying the ozone aqueous solution on the front and back sides of the baffle plate, so that the ozone aqueous solution reacts with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate;

[0083] S106, spraying SC1 solution on the front and back of the control plate to remove foreign particles formed on the control plate in the steps S104 and S105;

[0084] S107, spraying SC2 solution on the front surface of the blocking plate to remove metal particles formed on the blocking plate in the steps S04 and S105.

[0085] Figure 7 This is a test diagram of the residual impurity particles after the control plate is cleaned by the cleaning method of Example 1; Figure 8 This is a test chart showing the residual impurity particles after 25 baffle plates were cleaned using the cleaning method of Example 1;

[0086] Fig. 9 The RSM morphology scan diagram of the control plate after cleaning using the cleaning method of Example 1 Figure 1 ; Fig.10 The RSM morphology scan diagram of the control plate after cleaning using the cleaning method of Example 1 Figure 2 .

[0087] See also Figures 7 to 10 It can be seen that after the baffle plate is cleaned by the cleaning method of Example 1, the amount of impurity particles remaining in the baffle plate is significantly reduced (e.g. Figure 7 and Figure 8 There are no obvious defects on the surface of the baffle plate (such as Fig. 9 and Fig.10 As shown), it can be seen that the use of ozone aqueous solution to clean the baffle plate can make the ozone aqueous solution react with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the residual carbon material on the surface of the baffle plate, effectively solving the problem of residual carbon material and a large amount of impurity particles on the surface of the baffle plate, so that the baffle plate meets the standards for recycling.

[0088] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A method for cleaning a semiconductor baffle, characterized in that: The following steps are involved: S1, performing a first cleaning on the blocking plate to remove carbon nitride oxide silicon and impurity particles on the blocking plate; S2, using a DHF solution to clean the control plate to remove the natural oxide layer on the control plate; S3, cleaning the baffle plate with an ozone solution, so that the ozone solution reacts with the carbon material on the surface of the baffle plate to generate oxides, thereby removing the carbon material residue on the surface of the baffle plate; S4, performing a second cleaning on the blocking plate to remove foreign particles formed on the blocking plate in the steps S2 and S3.

2. The method for cleaning a semiconductor baffle plate according to claim 1, characterized in that: The step of using ozone aqueous solution to clean the control plate in step S3 includes: The ozone aqueous solution is sprayed on the front and back sides of the baffle plate, and the spraying rate of the ozone aqueous solution is controlled to be 1.5-2 L / min.

3. The method for cleaning a semiconductor baffle plate according to claim 1 or 2, characterized in that: The step of using ozone aqueous solution to clean the control plate in step S3 includes: The concentration of the ozone aqueous solution for cleaning the baffle plate is controlled to be not less than 30 ppm, and the cleaning time is 60 to 120 seconds.

4. The method for cleaning a semiconductor baffle plate according to claim 1, characterized in that: The step of using the DHF solution to clean the control plate in step S2 includes: The DHF solution is sprayed on the front and back sides of the baffle plate, and the spraying rate of the DHF solution is controlled to be 1.5-2 L / min.

5. The method for cleaning a semiconductor baffle plate according to claim 1 or 4, characterized in that: The step of using the DHF solution to clean the control plate in step S2 includes: The DHF solution for cleaning the baffle plate is controlled to be a mixture of 49% HF solution by mass and water in a volume ratio of 1:50 to 1:100, and the cleaning time is controlled not to exceed 60 seconds.

6. The method for cleaning a semiconductor control sheet according to claim 1, characterized in that: The step of performing a second cleaning on the control plate in step S4 includes: The blocking plate is sprayed with SC1 solution and SC2 solution in sequence, and the spraying rates of the SC1 solution and the SC2 solution are controlled to be 1.5-2 L / min.

7. The method for cleaning a semiconductor baffle plate according to claim 6, characterized in that: The step of sequentially spraying the SC1 solution and the SC2 solution on the baffle plate comprises: The SC1 solution for cleaning the baffle plate is controlled to be a mixture of 29% ammonia water, 31% hydrogen peroxide and water in a volume ratio of 1:2:50 to 1:2:100, and the spraying time of the SC1 solution is controlled to be 60 to 120 seconds.

8. The method for cleaning a semiconductor control sheet according to claim 6, characterized in that: The step of sequentially spraying the SC1 solution and the SC2 solution on the baffle plate comprises: The SC2 solution for cleaning the baffle plate is controlled to be a mixture of 29% hydrochloric acid, 31% hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100, and the spraying time of the SC2 solution is controlled to be 10 to 30 seconds.

9. The method for cleaning a semiconductor control sheet according to claim 1, characterized in that: The step of performing a first cleaning on the control plate in step S1 includes: The baffle plate is cleaned in a water tank using hydrofluoric acid solution, SC1 solution and SC2 solution in sequence, and the rate of liquid circulation in the water tank is controlled to be 2-5 L / min. 。 10. The method for cleaning a semiconductor control sheet according to claim 9, characterized in that: The step of sequentially using a hydrofluoric acid solution, an SC1 solution, and an SC2 solution to clean the baffle plate in a water tank comprises: The time for cleaning the baffle plate with the hydrofluoric acid solution is controlled to be 40 to 60 minutes; the time for cleaning the baffle plate with the SC1 solution is controlled to be 5 to 10 minutes ； Control the time for the SC2 solution to clean the control plate to be 5 to 10 minutes; The SC1 solution for cleaning the baffle plate is composed of 29% ammonia water, 31% hydrogen peroxide and water in a volume ratio of 1:2:50 to 1:2:100; the SC2 solution for cleaning the baffle plate is composed of 29% hydrochloric acid, 31% hydrogen peroxide and water in a volume ratio of 1:1:50 to 1:1:100.

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