Structure and method for optimizing through-substrate vias and cooling channels in composite substrates

Abstract

The invention relates to structures and methods for optimizing through-substrate vias and cooling channels in composite substrates. Technical solutions present structures, systems, and methods for providing a cold plate for thermal management of circuit dies using cooling channels and through surface vias (TSVs) formed through multiple bonded substrates. A first substrate may include circuitry coupled with a first electrical contact etched in the first substrate and a second substrate may include a second electrical contact etched in the second substrate. A channel may be etched between the second electrical contacts. A third substrate may include a third electrical contact etched to form a combined channel enclosed by the first substrate, the second substrate, and the third substrate. The electrical circuit may be electrically coupled with a third plurality of electrical contacts via the first electrical contact and the second electrical contact and the combination channel configured to dissipate heat generated by the electrical circuit.

Description

[0001] Cross-reference to related patent applications

[0002] This application claims the benefit of and priority to U.S. Provisional Application No. 63 / 596,518, filed on November 6, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure generally relates to systems and methods of forming semiconductor devices, including but not limited to forming semiconductor devices having metal contacts and cooling channels. Background Art

[0004] Semiconductor devices may be designed in a variety of ways and used in a variety of applications. During operation, semiconductor devices may generate heat that, unless dissipated, may adversely affect the performance of these devices. Depending on the design, semiconductor devices may be integrated with other circuits or systems to make managing device temperature challenging. Summary of the invention

[0005] Integrating circuits such as semiconductor integrated circuits (ICs) into packages or systems can present challenges when dealing with high power density ICs that generate heat that air cooling alone cannot adequately dissipate. Such heat-generating ICs are powered or electrically connected using vertically oriented conductive contacts (sometimes referred to as through substrate vias (TSVs)) that can run through material below the IC and couple to the bottom of the IC. In such configurations, it can be difficult to effectively dissipate heat from the IC using the same material already occupied by the TSVs. The technical solution of the present disclosure overcomes these challenges by providing a composite multi-substrate structure that facilitates electrical interconnection using vertical routing of TSVs below the IC while providing cooling fluid channels routed through the composite multi-substrate structure to provide electrical dissipation through a fluid running through the channels. Thereby, the technical solution both facilitates electrical interconnection of the IC using TSVs routed below the IC while providing improved heat dissipation using fluid channels.

[0006] One aspect of the technical solution relates to a system. The system may include a first substrate including a circuit coupled to a first plurality of electrical contacts etched vertically relative to a first surface of the first substrate. The system may include a second substrate including a second plurality of electrical contacts etched vertically through the second substrate and relative to the first surface of the second substrate. One or more channels may be etched between the second plurality of electrical contacts and through the second substrate and oriented perpendicularly to the second plurality of electrical contacts. The system may include a third substrate including a third plurality of electrical contacts etched perpendicularly to the first surface of the third substrate. The one or more channels may pass through at least the second substrate and may be enclosed by the first substrate, the second substrate, and the third substrate. The circuit may be electrically coupled to the third plurality of electrical contacts via the first plurality of electrical contacts and the second plurality of electrical contacts and the channels are configured to dissipate heat generated by the circuit.

[0007] The system may include a first bond between the first surface of the first substrate and the first surface of the second substrate to couple the first plurality of electrical contacts with the second plurality of electrical contacts. The system may include a second bond between the first surface of the third substrate and a second surface of the second substrate opposite the first surface of the second substrate to couple the second plurality of electrical contacts with the third plurality of electrical contacts.

[0008] The system may include the one or more channels configured to contain a cooling fluid moving through the one or more channels to dissipate the heat generated by the circuit from the circuit. The system may include the one or more channels configured to bring the cooling fluid contained within the one or more channels into physical contact with at least a portion of the first surface of the first substrate.

[0009] The system may include a fourth substrate and a fourth plurality of electrical contacts etched vertically through the fourth substrate and relative to the first surface of the fourth substrate. The system may include a second one or more channels etched between the fourth plurality of electrical contacts and through the fourth substrate and oriented vertically to the fourth plurality of electrical contacts. The fourth substrate may be joined to the second substrate to couple the second one or more channels of the fourth substrate and the one or more channels of the second substrate to form one or more combined channels. The one or more combined channels may pass through at least the second substrate and the fourth substrate. The one or more combined channels may include a cross section whose height includes the sum of the first height of the one or more channels and the second height of the second one or more channels. The cross section may have a width corresponding to at least one of the first width of the one or more channels or the second width of the second one or more channels.

[0010] The system may include a plurality of fins formed using at least the second substrate, the plurality of fins including at least a first fin of the plurality of fins separated from at least a second fin of the plurality of fins by a channel of the one or more channels. Each of the first fin and the second fin may form a portion of a sidewall of the channel and include at least one electrical contact of the second plurality of electrical contacts that passes through the height of each respective fin.

[0011] The system may include a device die including the circuit. The device die may include an interconnect layer disposed on or adjacent to a second surface of the first substrate. The system may include a device die including the circuit having an interconnect layer disposed on or adjacent to the first surface of the first substrate. At least a portion of the first surface may be configured to physically contact the fluid within the one or more channels. The first substrate may be bonded to the second substrate to axially align one or more of the first plurality of electrical contacts with one or more of the second plurality of electrical contacts.

[0012] The system may include one or more pads comprising a conductive material formed between one or more of the first plurality of electrical contacts of the first substrate and one or more of the second plurality of electrical contacts of the second substrate. The one or more of the first plurality of electrical contacts may be electrically coupled to the one or more of the second plurality of electrical contacts via the one or more pads. The circuit may be configured to receive power for operating the circuit via the third plurality of electrical contacts, the third plurality of electrical contacts being coupled to the circuit via the first plurality of electrical contacts and the second plurality of electrical contacts. The system may include an inlet for inputting a cooling fluid into the one or more channels and an outlet for outputting the cooling fluid from the one or more channels.

[0013] One aspect of the technical solution relates to a method. The method may include etching a first plurality of electrical contacts vertically relative to a first surface of a first substrate including a circuit. The method may include etching a second plurality of electrical contacts vertically relative to a first surface of a second substrate. The method may include etching one or more channels between the second plurality of electrical contacts and through the second substrate. The one or more channels may be oriented perpendicularly to the second plurality of electrical contacts. The method may include etching a third plurality of electrical contacts perpendicularly to a first surface of a third substrate. The method may include bonding the first substrate, the second substrate, and the third substrate to electrically couple the circuit with the third plurality of electrical contacts via the first plurality of electrical contacts and the second plurality of electrical contacts and enclosing the one or more channels passing through at least the second substrate by the first substrate, the second substrate, and the third substrate to dissipate heat generated by the circuit.

[0014] The method may include forming a first bond between the first surface of the first substrate and the first surface of the second substrate to couple the first plurality of electrical contacts with the second plurality of electrical contacts. The method may include forming a second bond between the first surface of the third substrate and a second surface of the second substrate opposite the first surface of the second substrate to couple the second plurality of electrical contacts with the third plurality of electrical contacts. The method may include configuring the one or more channels to contain a cooling fluid that moves through the one or more channels to dissipate the heat generated by the circuit from the circuit. The one or more channels may be configured to physically contact the cooling fluid with at least a portion of the first surface of the first substrate.

[0015] The method may include etching a fourth plurality of electrical contacts through the fourth substrate and perpendicularly relative to the first surface of the fourth substrate. The method may include etching a second one or more channels between the fourth plurality of electrical contacts and through the fourth substrate, the second one or more channels being oriented perpendicularly to the fourth plurality of electrical contacts. The method may include joining the fourth substrate to the second substrate to couple the second one or more channels of the fourth substrate and the one or more channels of the second substrate to form one or more combined channels. The one or more combined channels may pass through at least the second substrate and the fourth substrate. The one or more combined channels may include a cross section whose height includes the sum of the first height of the one or more channels and the second height of the second one or more channels. The cross section may have a width corresponding to at least one of the first width of the one or more channels or the second width of the second one or more channels.

[0016] The method may include forming a plurality of fins using at least the second substrate. The plurality of fins may include at least a first fin of the plurality of fins separated from at least a second fin of the plurality of fins by a channel in the one or more channels. Each of the first fin and the second fin may form a portion of a sidewall of the channel and include at least one of the second plurality of electrical contacts that passes through the height of each respective fin. The method may include providing a device die that includes the circuit. The device die may include an interconnect layer disposed on or adjacent to at least one surface of the first substrate. The at least one surface may include at least a portion of the at least one surface configured to physically contact the fluid within the one or more channels. The method may include forming one or more pads using a conductive material between one or more of the first plurality of electrical contacts of the first substrate and one or more of the second plurality of electrical contacts of the second substrate. The one or more of the first plurality of electrical contacts may be electrically coupled to the one or more of the second plurality of electrical contacts via the one or more pads.

[0017] The method may include forming an inlet for inputting a cooling fluid into the one or more channels. The method may include forming an outlet for outputting the cooling fluid from the one or more channels. The method may include configuring the circuit to receive power for operating the circuit via the third plurality of electrical contacts, the third plurality of electrical contacts being coupled to the circuit via the first plurality of electrical contacts and the second plurality of electrical contacts.

[0018] One aspect of the technical solution relates to a structure having a composite substrate using one or more channels to cool a circuit. The structure may include a composite substrate having a first substrate, the first substrate including a circuit coupled to a first plurality of electrical contacts etched vertically relative to a first surface of the first substrate. The composite substrate may include a second substrate including a second plurality of electrical contacts etched vertically through the second substrate and relative to the first surface of the second substrate. The second substrate may include one or more channels etched between the second plurality of electrical contacts and through the second substrate and oriented perpendicularly to the second plurality of electrical contacts. The composite substrate may include a third substrate including a third plurality of electrical contacts etched perpendicularly to the first surface of the third substrate. The composite substrate may include a first bond between the first substrate and the second substrate and a second bond between the second substrate and the third substrate to electrically couple the circuit with the third plurality of electrical contacts via the first plurality of electrical contacts and the second plurality of electrical contacts and enclose the one or more channels passing through at least the second substrate by the first substrate, the second substrate, and the third substrate. The one or more channels are configured to dissipate heat generated by the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] These and other aspects and features of embodiments of the present invention will become apparent to those of ordinary skill in the art after reviewing the following description of specific embodiments in conjunction with the accompanying drawings.

[0020] Figure 1 is an example of a system including a device on a packaging substrate according to aspects of the technical solution.

[0021] Figure 2 Multiple views illustrating example devices or structures having cooling fluid channels alongside TSVs according to aspects of the technical solution.

[0022] Figure 3 Additional views illustrating example devices or structures having convective cooling fluid channels alongside TSVs, for example using a stacked wafer arrangement, according to aspects of the technical solution.

[0023] Figure 4 An example of a device or structure having an inlet and an outlet for a fluid channel for convection cooling according to aspects of the technical solution is described.

[0024] Figure 5 An example process flow for producing or manufacturing an example device or structure including a fluid channel adjacent to a TSV according to aspects of the technical solution.

[0025] Figure 6 A continuation of an example process flow for producing or manufacturing an example device or structure including fluid channels alongside TSVs according to aspects of the technical solution.

[0026] Fig. 7A and 7B An example of a structure or an apparatus according to aspects of the technical solution is described.

[0027] Figure 8 An example of a structure or an apparatus according to aspects of the technical solution is described.

[0028] Fig. 9 is an example of a structure or device that uses a fluid moving device to move fluid through a convection cooling fluid channel according to aspects of the technical solution.

[0029] Fig.10 An example flow chart illustrating a method for providing forced fluid convection cooling to a heat generating circuit via one or more channels disposed alongside a vertically oriented through-hole. DETAILED DESCRIPTION

[0030] The embodiments of the present invention will now be described in detail with reference to the drawings, which are provided as illustrative examples of the embodiments to enable those skilled in the art to practice the embodiments and substitutions understood by those skilled in the art. The following figures and examples are not meant to limit the scope of the embodiments of the present invention to a single embodiment, but other embodiments can be performed by interchanging with some or all of the described or illustrated elements or elements understood by those skilled in the art. The specific elements of the embodiments of the present invention can be implemented partially or completely using known components, and only those parts of such known components required for understanding the embodiments of the present invention will be described, and the detailed description of other parts of such known components will be omitted so as not to make the embodiments of the present invention unclear. The embodiments described in the contexts described therein should not be limited thereto. For example, it should be understood by those skilled in the art that, unless otherwise specified herein, the embodiments described as being implemented in a semiconductor substrate should not be limited to only this implementation, but that they may include embodiments implemented in various types of substrates and other materials. In this specification, unless otherwise explicitly stated herein, the embodiments showing a single component should not be considered as limiting, and specifically, the present disclosure is intended to cover other embodiments including multiple identical components, and vice versa. Furthermore, applicant does not intend for any term in the specification or claims to be given unusual or special meanings unless expressly so stated.In addition, embodiments of the present invention encompass present and future known equivalents to known components referenced herein by way of description.

[0031] Thermal management of semiconductor heat generating integrated circuits (ICs) can be a challenge. In some designs of high power density ICs, natural convection may not be sufficient to provide adequate cooling and forced convection cooling may be preferred. However, when such high power ICs conduct electrical signals using conductive contacts (through substrate vias or TSVs) formed to run vertically through the substrate material beneath the IC where the heat is generated, it may be difficult to implement forced convection cooling of the IC. In such configurations, it may be beneficial to simultaneously maximize the heat transfer coefficient to promote adequate cooling of the IC while also maximizing the density of TSV contacts through the material beneath the IC.

[0032] These solutions address challenges through a composite substrate structure in which multiple substrates are bonded to enable TSVs for vertical electrical connections under the IC while enabling cooling channels etched through the composite substrate to dissipate heat generated by the IC. The technical solutions facilitate minimizing the size of the composite substrate structure by addressing the limitations imposed by the aspect ratio, diameter, and pitch of the TSVs to determine improved TSV density and minimize constraints associated with maximum TSV depth per substrate in multiple substrates. By forming cooling channels between TSVs and through multiple bonded substrates (e.g., perpendicular to the TSVs and parallel to the surface of the composite substrate), the technical solutions can facilitate a large number of substrates in the composite substrate structure to increase the cross-section of the cooling channels to provide improved cooling fluid flux, resulting in increased convective cooling of the IC and facilitating improved performance (e.g., increased speed and power) of operating the IC.

[0033] Figure 1 An exemplary device, structure, or system 100 illustrating a technical solution, wherein a die or die stack 105 may be provided in a die stack structure 110 that may include a cold plate 215 for cooling the die 105. The cold plate 215 (e.g., Figure 2 105 and the interposer 120.

[0034] The cold plate 215 may include or be formed within one or more substrates, interposers, or dies 105, which together may form a die stack structure 110 having a heat generating circuit 210 (e.g., one or more ICs). The die stack structure 110 may include a composite substrate 205 having any number of substrates, interposers, and dies. The substrate used to form the composite substrate 205 of the die stack structure 110 may include any substrate material, such as a silicon wafer, a gallium arsenide substrate, a silicon carbide substrate, a gallium nitride substrate, a glass or ceramic substrate, a flexible or any other substrate used for circuit production. For example, Figure 2 As discussed in more detail in , metal contacts or through substrate vias (e.g., TSVs) may be formed in vertical cavities (e.g., perpendicular to the surface of the substrate) through the composite substrate 205. TSVs may be integrated with a multi-substrate die stack structure to provide electrical connections between the die 105 and one or more substrates below the die stack structure 110 forming a cold plate 215. The cold plate 215 may include one or more cavities, tubes, or other cooling channels for conducting or confining a flow of cooling fluid to provide convective cooling to the circuitry 210 in the die 105.

[0035] The die 105 may include any semiconductor component including an electronic circuit 210 (e.g., an integrated circuit or any other heat generating electrical component) fabricated on or within a piece of semiconductor material. The die 105 may include any substrate material, such as a silicon substrate, a gallium arsenide substrate, a silicon carbide substrate, a gallium nitride substrate, or any other substrate used for circuit production, including, for example, sapphire. For example, the die 105 may include any one or more circuits 210 implemented in or on or within one or more substrates of the die stack structure 110, including a processor, a microcontroller, a graphics processing unit (GPU), a field programmable gate array (FPGA), a power management integrated circuit (PMIC), a radio frequency (RF) power amplifier, a memory module, or a power supply. The die 105 may include any analog or digital circuit that uses electricity and generates heat, having any combination of logic gates and active or passive electronic components (e.g., resistors, capacitors, inductors), circuits for performing arithmetic functions, memory cells, flip-flop and latch circuits, or clock circuitry. Die 105 may comprise a single physical portion of a semiconductor substrate processed to include one or more circuits and configured to connect to contact lines (eg, via pads or vias) and to interface with other devices, components, or systems.

[0036] The die 105 may be provided on a substrate stack which may include a cold plate 215, such as Figure 2 . The die stacking structure 110 may include one or more interposers 120, which may include a substrate in which high-density electrical connections and signal routing may be formed for providing electrical interconnections between circuits (e.g., ICs) within a single package. The die 105 with the circuit 210 may be connected to the cold plate 215 in any manner that provides strong thermal contact and contains the fluid 255 of the fluid channel 250 or the combined fluid channel 290. For example, the techniques for connecting the die 105 to the cold plate 215 may include hybrid bonding and under-bump metallization (ubump). For example, the interposer 120 may include a silicon interposer, such as a layer of silicon material having a network of conductive interconnects. For example, the interposer may include a semiconductor interposer for 2.5D or 3D integration, which may be configured or used to stack multiple dies 105 on top of each other (e.g., to form the die stacking structure 110). 2.5D integration may include placing multiple integrated circuits on an interposer or substrate and may utilize through-silicon vias (TSVs) for vertical electrical connections. 2.5D integration may use an assembled underlying structure, such as having multiple circuits together side by side on a common substrate. 3D integration may include a structure in which multiple integrated circuits 210 are stacked on top of each other (such as processors, memory, logic, or sensors). The cold plate 215 may include any or all of the functionality of the interposer 120. After assembly, the cold plate 215 may include fluid lines. The cold plate 215 may interconnect multiple circuit elements (such as memory, logic, and sensors).

[0037] The interposer 120, substrate, or die 105 may form a cold plate 215 within the composite substrate 205, which may include any number of TSVs integrated therethrough. The die stacking structure 110 may include TSVs oriented vertically relative to the surface of the substrate. The die stacking structure 110 may include channels, such as cavities, voids, or openings, etched or otherwise formed within the composite substrate 205. The channels may include cavities, voids, or openings formed through the composite substrate and oriented perpendicular to the TSVs (e.g., parallel to the surface of the substrate and through one or more substrates of the multi-substrate die stacking structure 110) to provide cooling for the heat-generating ICs of the die 105. The technical solution may be applied to the system 100 or any portion thereof, such as below or above any top die 105, any bottom die 105, or within any layer of the die stacking structure 110, including any material between the die 105, such as within one or more interposers 120 or substrates between two or more die 105 having circuits 210.

[0038] Figure 2 An example device, system, or structure 200 is provided that integrates vertically oriented TSVs through a composite substrate 205 alongside channels that pass through the composite substrate 205 perpendicularly relative to the TSVs and provide convective cooling. Figure 2 A cross-sectional view 202 of a three-substrate composite substrate 205 example, a view (e.g., plan view) 204 across a BB cross section, a cross-sectional view 206 of a four-substrate composite substrate 205 example, and a view across an AA cross section 206 may be provided. These examples may include a structure having multiple substrates bonded together to form a composite substrate 205 to provide cooling via fluid channels 250 routed through the composite substrate parallel to the surface of the composite substrate 205, beside and perpendicular to TSVs 245 oriented vertically (e.g., perpendicularly) relative to the plane of the composite substrate 205.

[0039] View 202 illustrates a cross-sectional view of a structure or device 200 having a three-substrate composite substrate 205. The composite substrate 205 may include a die 105 having one or more circuits 210. The die may be mounted, attached, bonded, or otherwise coupled on top of a cold plate having multiple substrates, such as a substrate bondable to the die via a first bonding interface, a second substrate bondable to the first substrate via a second bonding interface, and a third substrate bondable to the second substrate via a third bonding interface. Through substrate vias (TSVs) 245 may be formed within cavities etched, drilled, or otherwise formed through individual substrates of the composite substrate 205 to form a combined TSV 295 through the multiple substrates of the composite substrate 205. Depending on the design, the TSVs 245 may be etched or formed in cavities that may be etched at an angle relative to a vertical orientation, such as 5°, 10°, 15°, 20°, 30°, 45°, or an angle greater than 45°, relative to the surface of the composite substrate. Etching may include a process that selectively removes material from a substrate (eg, a surface of a substrate) using chemical, physical, or mechanical means.

[0040] The TSVs 245 may be formed by filling the etched cavities of the TSVs with a conductive material, such as a metal, such as copper or aluminum. The TSVs 245 may be connected to contacts of the circuit 210, such as at the bottom side of the circuit 210. The TSVs 245 may be routed vertically relative to the surface of the composite substrate and extend downwardly toward the first, second, and third substrates (e.g., 260-270) of the cold plate 215. The cooling fins 240 may be formed between the channels 250 containing the cooling fluid 255 to extend the surface area relative to the cooling fluid 255 and improve the dissipation of heat from the circuit 210 and the composite substrate 205.

[0041] Similar to the composite substrate 205 structure in view 202 showing three substrates forming a cold plate 215, the example structure of view 206 shows a cross section of a composite substrate 205 having a cold plate 215 formed using four substrates, such as 260, 265, 270, and 275. The composite substrate 205 of view 206 provides a combined TSV 295 and a combined channel 290 that can pass through multiple substrates of the composite substrate 205. The example structure in view 206 can include one or more circuits 210 in a die 105 that can correspond to a first substrate 260. TSVs 245 can be coupled to the circuits 210 and extend downward through the composite substrate 205 across multiple bonding interfaces 220. The bonding interfaces 220 can be formed by bonding the first substrate 260 to the second substrate 265, bonding the second substrate 265 to the third substrate 270, and bonding the third substrate 270 to the fourth substrate 275. Combined TSVs 295 may be formed by electrically coupling individual TSVs 245 formed within each of the individual substrates, each resulting in a single continuous electrical contact through the thickness of the multiple substrates of composite substrate 205. Combined channels 290 may be formed by aligning and combining individual fluid channels 250 with one another to form a channel having a larger (e.g., combined) cross-sectional area, thereby facilitating a larger flux of cooling fluid 255 through combined channels 290 to result in improved heat transfer.

[0042] The example structures in views 202 and 206 may include a composite substrate 205 that may be formed using any substrate bonding, which may include any precise and permanent attachment of two or more substrates (e.g., semiconductor wafers) to form a single integrated structure (e.g., structure 200 or die stack structure 110). The bonding interface 220 may include surfaces of two adjacent substrates in a stack that are bonded together. In some implementations, substrate bonding or substrate surface bonding may not necessarily include surfaces directly bonding to each other (e.g., bringing them into direct physical and / or thermal contact), but rather bonding may occur through intervening layers, materials (e.g., deposited layers of material).

[0043] The cold plate 215 may be formed using multiple substrates (e.g., 260, 265, 270, and 275) that may be bonded together via any number of bonding interfaces 220. For example, the first substrate 260 and the second substrate 265 may be aligned and bonded together such that their respective pre-formed TSVs 245 are in electrical contact, thereby providing a combined TSV 295 that is routed through the multiple substrates (e.g., 265 and 270) of the composite substrate 205. The TSVs 245 and combined TSVs 295 may be routed perpendicularly relative to the plane of the die 105 or substrates 260 and 265 or may be tilted at any angle relative to a perpendicular orientation. The first substrate 260 positioned between the die 105 atop and the second substrate 265 below may include any number of TSVs 245 through the thickness of the substrate 260 (e.g., providing an electrical connection between a first (e.g., top) surface of the first substrate 260 that interfaces with the die 105 and a second (e.g., bottom) surface of the first substrate 260). The first substrate 260 may or may not include at least a portion of one or more fluid channels 250 through which the fluid 255 may move or propagate to provide fluid-based convection cooling to the circuit 210 .

[0044] The die 105 (which may also be referred to as the device die 105) may include a die 106 having any number of heat generating circuits 210. The die 105 may include a device layer, which may include an interconnect layer. The interconnect layer may include conductive contacts or lines of the circuit 210, such as metal conductors that interconnect various portions of the circuit 210. For example, the interconnect layer may include copper or aluminum lines or contacts for providing electrical connections for various transistors, capacitors, and resistors of the IC. The interconnect layer may be insulated using a grown insulating layer and may be buried below the surface of the composite substrate 205.

[0045] Circuit 210 may include any combination of interconnected electronic components or conductive and semiconductive materials or features configured to perform a specific electrical function. Circuit 210 may include any combination of electrical or electronic components, features for generating, processing, controlling, regulating, receiving, or transmitting electrical signals. Circuit 210 may include any heat generating electronic components of die 105, including digital logic circuits, analog circuits, microprocessor circuits, radio frequency (RF) circuits, power management circuits, sensor circuits, memory circuitry, or any other circuitry that may be provided by die 105. Circuit 210 may generate heat during its operation, which may adversely affect the operation of circuit 210 or any other adjacent circuitry or system unless such heat is dissipated by cold plate 215 using its cooling fluid channels 250.

[0046] The fluid channel 250 (also referred to as a cooling channel 250 or channel 250) may include any one or more cavities, pathways, or conduits for enclosing a cooling fluid 255 (e.g., a liquid or a gas) that may move through the channel 250 to dissipate heat from the circuit 210. The fluid channel 250 may include a trench etched into a surface of a substrate (e.g., a top surface of a second substrate 265). The channel 250 may be enclosed or sealed by the same substrate into which it is etched or it may be sealed or enclosed by multiple substrates. For example, the first substrate 260 may provide a ceiling (e.g., a top surface) of the channel 250, the second substrate 265 may provide sidewalls of the channel 250, and the third substrate 270 may provide a floor (e.g., a bottom surface) of the channel 250, whereby all three substrates 265-270 form a channel 250 containing a fluid 255 therein.

[0047] The sealing or enclosing of the fluid channel 250 may be performed using wafer bonding to form one or more bonding interfaces 220. The bonding of substrates, such as 265 to 270, may include bonding any two substrates together to eliminate gaps or spacing between them, such as by using fusion bonding or adhesive bonding under controlled conditions. The bonded substrates may include the channel 250 etched into the bonded surfaces. Etching may include selectively removing substrate material from the surface of the substrate or through the entire thickness of the substrate, such as using a dry or wet etching process. Etching may be performed along one or more patterns to create cavities or holes for the TSVs next to the trench lines of the channel 250 to remove material from the substrate to allow the TSV 245 and the channel 250 to be filled.

[0048] The fluid channel 250 may seal or enclose a fluid 255, such as a liquid or gas, within all sides of the channel 250, such as the top or ceiling, the bottom or floor, and the sides. The channel 250 may be configured to move the fluid 255 through the channel 250 by providing one or more inlets, such as an inlet and an outlet, for the fluid 255 to enter the channel 250 and be forced, pressurized, pushed, or otherwise move through the channel 250. Because the channel 250, such as a channel structure, may be disposed below the circuit 210 and arranged in a plane parallel to the circuit 210, the channel 250 may facilitate or provide heat transfer from the circuit 210, through the material of the composite substrate 205, to the fluid 255 moving through the channel 250. For example, one or more channels 250 may be arranged or shaped to form parallel planes or surfaces within the composite substrate 205 and below the die 105 to provide a cold plate 215 for cooling the die 105.

[0049] The channels 250 may form cooling fins 240 together with the substrate material. The cooling fins 240 may be formed by etching the substrate material between the two-dimensional array of channels 250. The cooling fins 240 may include the sidewalls of one or more (e.g., two) adjacent channels 250. For example, one sidewall of the cooling fin may form the sidewall (e.g., the left wall) of a first channel 250 and the second sidewall of the cooling fin 240 may form the sidewall (e.g., the right wall) of a second channel 250. The cooling fins 240 may have the same or different dimensions on different axes. The fins 240 may be patterned to have the same or different sizes and shapes.

[0050] Fins 240 may be arranged to form a single channel 250 (e.g., a single flow path) under the die. A single channel 250 may be formed to include a serpentine path and may form, for example, a zigzag pattern or a pattern with one or more turns or changes in direction to span or cover an area under the circuit. A single channel 250 configuration may include a channel that moves in a plane parallel to and positioned below the circuit 210 to allow fluid 255 to flow across an area under the circuit 210. One or more channels 250 may also be arranged to actually flow through the entire area of ​​the die or only a portion thereof. One or more channels 250 may include any topological combination, including any shape or route, such as a straight line or curve, curvature, bend, corner, a portion of a channel having the same or different width, height, or length, or any other shape or form change.

[0051] The channels 250 and fins 240 may be etched or machined through any number of substrates (e.g., 265-270) in any combination or orientation. For example, the channels 250 and fins 240 may be configured or designed to form a network of tubes through which a cooling fluid 255 (e.g., a liquid coolant or gas) may flow in a single channel configuration or a multi-channel configuration. The network of tubes may include one or more single channels 250 connected to other one or more channels 250 to form an array or grid of channels 250 under the die 105, a set of straight parallel channels 250, a single serpentine, a meandering or curvilinear (e.g., a curved, zigzag, or s-shaped) channel having straight channel segments and curved channel portions to cover or span an area or volume, or any arrangement, shape, or orientation.

[0052] For example, a serpentine (e.g., single) channel 250 may or may not form a fin 240. In some examples, the design may include an array of fins. For example, the design may include a single row of fins. The design may include fins 240 whose heights are orthogonal relative to TSVs 245. For example, the design may include one or more interleaved 2D arrays of fins 240 that are offset and may have a hexagonal or non-periodic lattice or be uniquely spaced.

[0053] As the circuit 210 generates heat, a cooling fluid 255 having a lower temperature than the temperature of the composite substrate 205 may be circulated through the channel 250. By having a lower temperature than the temperature of the surrounding materials (e.g., substrates 260 and / or 265), the fluid 255 may receive heat from the fins 240 and other surfaces of the channel 250. Heat may be carried away from the die 105 via the fluid 255, which may heat up during the process of flowing through the die to carry heat away from the composite substrate 205 as it exits the structure. The fluid channel 250 may include a cross-section of any shape, such as rectangular or curved (e.g., circular), square, trapezoidal, hexagonal, triangular, oval, or any other shape.

[0054] Fluid 255 may include any fluid, such as a gas or liquid, that can be used to cool any portion of structure 200 or composite substrate 205 including circuit 210. Fluid 255 may include water or air, a fluorocarbon liquid, an oil (such as mineral oil), or a refrigerant. The gas may be under pressure but the pressure is not so high as to cause mechanical failure. Because fluid 255 may be pumped, pushed, or moved through one or more channels 250 via a fluid moving device (such as a cooling pump or fan device), fluid 255 may be replenished in channel 250.

[0055] Through substrate vias (TSVs) 245 (also referred to as vias 245) may include or be filled with any conductive material, electrical contacts, and provide a conductive path within one or more semiconductor substrates. TSVs 245 may include any conductive path or material designed to transfer electrical signals, such as including heavily doped semiconductor materials. TSVs 245 may include elongated electrical contacts to provide a path for electrical signals routed under and coupled to die 105. TSVs 245 may include metal materials deposited or filled inside a cavity or hole (e.g., via) of one or more substrates (e.g., 105, 120, 260, 265, 270, or any other) to provide a conductive path from one surface of the substrate to the opposite surface. Vias 245 may be oriented or arranged in a vertical or perpendicular direction or at any tilt angle relative to die 105 and / or substrates 260 or 265. For example, TSV 245 may be formed by etching vertically oriented (eg, downward) holes or cavities in first substrate 260 and second substrate 265 and filling each of the holes or cavities with a conductive material (eg, copper, nickel, or tungsten or any other electrical conductor).

[0056] The combined TSV 295 may be formed by combining multiple TSVs 245 from multiple substrates (e.g., 260-270) to form a single elongated conductive via that spans across such multiple substrates. The combined TSV 295 may include a first TSV 245 etched and formed through a first substrate 260 and a second TSV 245 etched and formed through a second substrate 265. The combined TSV 295 may be formed using any number (two, three, or more) of TSVs 245 formed through any number of substrates and interconnected via substrate bonding or any other technique.

[0057] Individual TSVs 245 from different substrates may be aligned with each other (e.g., coaxially lined up to connect end-to-end) to form an electrical coupling and form a single combined TSV 295 through the substrate. For example, the combined TSV 295 may be formed by aligning the individual TSVs 245 with each other during a zero-gap bonding process (e.g., hybrid bonding). Zero-gap bonding may connect the edges of individual TSVs 245 from two substrates along a bonding interface 220, thereby connecting the TSVs 245 of the first substrate to the TSVs 245 of the second substrate and connecting the insulating or semiconductor surface of the first substrate to the insulating or semiconductor surface of the second substrate. For example, zero-gap bonding may be used so that the insulator materials of the substrates are lined up and connected to each other and the conductor materials are lined up and connected or bonded to each other. The conductor may be made of more than one material (e.g., including a conductive barrier). The insulator may also be composed of multiple layers of insulating material.

[0058] The combined TSV 295 may be formed in a variety of ways. For example, two or more TSVs may be directly connected to each other (e.g., in end-to-end physical contact) to form the combined TSV 295. Multiple TSVs 245 may be electrically coupled to each other via one or more intervening conductive bonding pads (e.g., TSV pad 305) to form the combined TSV 295, and one or more intervening conductive bonding pads may be formed or disposed between the TSVs 245 to provide electrical connections between the TSVs 245. For example, zero-gap bonding may be used to bring two ends of two TSVs 245 in two substrates together to electrically couple to each other via bonding pads to provide a wider surface area for connecting the TSVs 245 to form a single combined TSV 295. In such a configuration, the TSV 245 may include a first portion of a through-hole routed through the first substrate 260 and a second portion of a through-hole routed through the second substrate 265. Two TSVs 245 may be coaxially aligned with each other to electrically couple to each other directly (e.g., end-to-end) or via a TSV pad (e.g., 305) to form a single combined TSV 295 that passes through multiple substrates of the composite substrate 205 that are seamlessly connected to each other by alignment and / or fusion or bonding. The TSVs 245 may be axially aligned (e.g., co-linear, oriented along the same line or direction, and touching end-to-end) to form a single straight combined TSV 295. The TSVs 245 may be misaligned but electrically coupled, connected, or bridged using metal pads or horizontal metal contacts or lines to form a combined TSV 295 using such pads or offset contacts. For example, the axial alignment may be off-center while still being sufficient to form an electrical connection to conduct electrical signals.

[0059] A combined channel 290, such as that illustrated in the example structure of cross-sectional view 206, may be formed by combining multiple substrate-bonded channels 250. For example, a combined channel 290 may include multiple aligned channel structures etched through multiple aligned substrates, such as 265 and 270, which may then be covered by a substrate, such as 260, to provide a top surface seal and by a bottom substrate, such as 275, to provide a bottom cover for the combined channel 290. A combined channel 290 may include any number, such as two, three, four, or more, of channels 250 etched within or through any number, such as two, three, four, or more, of substrates, such as 260-275. A combined channel 290 may interface with a combined fin 240 to form a sidewall of the combined channel 290. Such fins 240 of a combined channel 290 may form a combined fin through multiple substrates as they form the combined channel 290.

[0060] The cooling fin 240 may include any structure, protrusion, rib, protrusion, surface roughness, or extended feature for dissipating heat by increasing the surface area exposed to the cooling fluid 255. The cooling fin 240 may include any heat dissipation structure designed or used to improve heat transfer from itself to a cooler medium, such as the cooling fluid 255 within the channel 250 or the combined channel 290. The cooling fin 240 may include any combination of substrate materials, such as the first substrate 260 or the second substrate 265. In some configurations, the cooling fin 240 may include at least a portion of the TSV 245 exposed to the cooling fluid 255. Each of the substrates 260 or 265 may include a semiconductor substrate, such as silicon, gallium arsenide, silicon carbide, glass, or ceramic. The cooling fin 240 may include the TSV 245. The cooling fin 240 may include a protruding structure exposed to the cooling fluid 255 or in physical or thermal contact with the cooling fluid 255 along one or more sides of the fin. The cooling fins 240 may be combined (eg, aligned end-to-end and stacked on top of each other) to form a combined fin structure that passes through multiple substrates of the combined substrate 205 and forms the sidewalls of the combined channel 290 .

[0061] Thermal contact may include any connection, path, or interface between two materials or objects that facilitates heat transfer, whether in direct physical contact or through an intervening thermally insulating structure or medium. For example, thermal contact may or may not include direct thermal or physical contact. For example, thermal contact may include an intervening layer or barrier of a film of thermally insulating material through which heat may be conducted or dissipated.

[0062] The cooling fins 240 may include a surface area in physical or thermal contact with the fluid 255 within the one or more channels 250. The cooling fins 240 may include a substrate material having a high thermal conductivity (e.g., between about 50 and 400 W / m*K or greater than 400 W / m*K) that facilitates improved heat transfer. The cooling fins 240 may include one or more TSVs 245 that are vertically routed through the substrate material (e.g., along the height of the cooling fins) and act as conduits for efficiently transferring heat from the electronic components to the substrate. The cooling fins 240 may include or be embedded, penetrated, or passed through by one or more TSVs 245 or combination TSVs 295 that may extend downward (e.g., vertically) along the fins 240. For example, the cooling fins 240 may include a plurality of TSVs 245 that pass through or extend through the cooling fins 240, such as along the height of the TSVs 245. The TSVs 245 may include thermally conductive material and facilitate dissipation of heat from the cooling fins 240 to the fluid 255 .

[0063] The bonding interface 220 may be used to attach, connect, join, couple, or bond the die 105 (e.g., device layer 205 or integrated circuit 210) to a substrate (e.g., 260 or 265) in which cooling fins 240 and fluid channels 250 may be formed. The bonding interface 220 may be created via wafer bonding of substrates (e.g., die 105 or substrates 260 or 265), such as, for example, permanently attaching two semiconductor wafers together into a single integrated structure. The bonding interface 220 may be implemented at the atomic or molecular level, such as using direct bonding, adhesive bonding, or fusion bonding. The structure 200 may be formed by wafer bonding the die 105 to one surface of a first substrate 260 and wafer bonding the second substrate 265 to another surface of the first substrate 260 to form a cold plate 215 having the first substrate 260 and the second substrate 265 for the die 105 and its circuit 210. The bonding interface 220 may be formed using various techniques. For example, the bonding interface 220 can be implemented using surface activation (using an oxide layer on one or more surfaces) to facilitate bonding. The bonding interface 220 can be implemented using direct bonding.

[0064] Although the example structures or systems shown in views 202 and 206 illustrate examples where the die 105 faces away from the surface that interfaces with the cold plate 215, it should be understood that, depending on the design, the surface of the die 105 having the circuit 210 may be oriented toward and aligned with the cold plate 215. For example, the circuit 210 may be positioned at a surface opposite to the first bonding interface 220 between the die 105 and the substrate of the cold plate 215 (e.g., substrates 260-275). For example, the circuit 210 may be positioned at or near (e.g., adjacent) the surface of the die 105 that interfaces (e.g., physically contacts or forms the bonding interface 220) with the substrate (e.g., 260-275) of the cold plate 215. In this configuration, the channel 250 (e.g., or the combined channel 290) may be placed proximate to the circuit 210 or may be in physical contact with a portion of the circuit 210, thereby reducing the thermal resistance between the circuit 210 and the channel 250 and improving heat transfer.

[0065] Figure 2 2 provides a cross-sectional plan view (e.g., a top view) of the composite substrate 205 cut across a plane of one or more channels 250 (e.g., or combined channels 290). View 204 may correspond to a cross-sectional view of the composite substrate cut across line BB shown in cross-sectional view 202. As shown in view 204, TSVs 245 (e.g., or combined TSVs 295) may be disposed or formed through fins 240 to separate different channels 250 (e.g., combined channels 290) of a multi-channel structure. The multi-channel structure may include a planar arrangement of parallel arrays of channels 250 and TSVs 245 arranged or spaced along lines or columns passing through cooling fins 240.

[0066] As illustrated in view 204, TSVs 245 may be routed or spaced through fins 240 in any pitch arrangement. Any number of TSVs 245 may be provided or routed beside (e.g., to the left or right of) each channel 250 or between any two channels 250, and may be oriented or routed in a direction orthogonal or perpendicular to the plane along which the fluid channels 250 are formed. TSVs 245 may be tilted at one or more angles relative to channels 250, depending on the implementation.

[0067] A channel structure or arrangement (such as, for example, that in view 202 or 206) may include one or more inlets 225 and outlets 230 for facilitating the flow of a fluid 255 through the channel 250. For example, the inlet and outlet may provide a conduit for the fluid 255 to enter or leave the fluid channel 250. Depending on the implementation, one or more inlets 225 may be provided on one end of the one or more channels 250, and one or more outlets 230 may be provided on the other end (e.g., the opposite end) of the one or more channels 250. The inlet 225 or outlet 230 may be arranged by etching or drilling and may include circular, rectangular, elongated, or any other shaped opening or cross-section.

[0068] View 208 provides a cross-sectional through-hole along line AA shown in view 204, showing a cross section along a row, such as across multiple columns of TSVs 245. View 208 provides a different view of the cooling fin 240 with TSVs 245 routed vertically through the cooling fin 240 and along the height of the cooling fin 240. Each TSV 245 may be separated from the channel 250 by a layer or sheet of substrate material (such as substrate 260 or 265) forming the cooling fin 240.

[0069] The technical solution may use a hybrid bonding surface to connect multiple wafers together and align and form TSVs 245 and channels 250, for example, by coaxially aligning and electrically contacting different portions or sections of TSVs 245 (e.g., from different substrates). The technical solution may also align and bring together (e.g., seal) fluid channels 250 between two or more different substrates. The system 200 (including its example structures shown in views 202 and 206) may use cooling fins 240 or other features (e.g., between channels 250) to allow one or more TSVs 245 to pass, route, or place layers through the channels 250 (e.g., between individual channels 250). The technical solution may use a hybrid bonding surface to connect different wafer substrates together, while TSVs 245 may be formed, etched, or drilled through cooling fins (e.g., fin structures) to facilitate more efficient heat distribution and cooling.

[0070] Technical solutions may include or utilize any zero-gap bonding that allows electrical connection through the substrate. For example, fusion bonding or hybrid copper bonding techniques may be used to bond, couple, or connect portions of metal vias into TSVs 245. For example, one or more TSVs 245 extending orthogonally through a portion of a cold plate 215 that includes fluid channels 250 (e.g., a planar array of fluid channels 205) may provide a die-side connection to the circuit 210 at the device layer 205. Examples of contacts on the circuit 210 side may include other TSVs 245 and copper bonding / landing pads to which TSVs 245 from the cold plate 215 may connect or electrically couple.

[0071] In the cold plate 215, wafers (e.g., substrates 260-275) may be bonded to have TSVs 245 that may contact other TSVs 245 or any intervening electrical landing pads or fan-out layers to form combined TSVs 295 of various structures or shapes. For example, a conductive pad or other structure may be used as a conductive interface connecting two offset TSVs 245. The cold plate 215 may be made of silicon or any material (e.g., glass, ceramic, or electrical insulator) or structure that allows the TSVs 245 to be electrically isolated from each other. The material used for the TSVs 245 may have a high thermal conductivity (e.g., a metal such as copper, tungsten, nickel). Low thermal conductivity materials may be used as a thin insulating layer (e.g., 20 nm film thickness) if such a structure remains sufficiently thermally conductive and if heat transfer can occur across it.

[0072] Figure 3 Various examples of structures, devices, or systems 300 are described that include additional design features or variations of combined TSVs 295 implemented with laterally offset TSVs 245. Figure 2 Example 200 in Example 300 may include a fluid channel 250 constructed in a stacked substrate to facilitate the flow of a fluid 255. Example 300 may be illustrated using cross-sectional views 302, 304, and 306. Although example 300 illustrates a two-wafer substrate design with a single bonding interface, technical solutions allow for more complex flow paths to be constructed by stacking any number of additional wafers or materials on top of each other.

[0073] View 302 illustrates a cross-sectional view of a joined first substrate 260 and a second substrate 265 (e.g., in a cold plate 215) having TSVs 245 and fluid channels 205. In the example configuration of view 302, one of the TSVs 245 includes a conductive TSV pad 305 that facilitates electrical connection of the two TSVs 245, despite a lateral shift or spatial offset between the two TSVs 245. As shown, for example, in the right TSV 245, the first TSV 245 in the first substrate 260 may be laterally (e.g., leftwardly) offset from the second TSV 245 in the second substrate 265. To facilitate electrical connection between the two TSVs 245, a TSV pad 305 (e.g., a conductive material or landing pad) may be disposed or formed between the two TSVs. The TSV pad 305 may include a structure or a planar area (e.g., a pad or a surface) that may include a conductive material or trace (e.g., copper, aluminum, or a doped semiconductor) that may be used to provide electrical continuity between a first TSV 245 (e.g., in the first substrate 260) and a second TSV 245 (e.g., in the second substrate 265). The TSV pad 305 may have any shape or size that facilitates connection between the TSVs 245. For example, the TSV pad 305 may include a length corresponding to a lateral offset between the TSVs 245 caused by a portion of the fluid channel 205 that one of the TSVs 245 may avoid by shifting to one side. In such a configuration, the TSV pad 305 may facilitate the formation of a combined TSV 295 even if different TSVs 245 are not aligned with each other.

[0074] As shown in cross-sectional view 304, die 105 may be oriented facing downward with its circuit 210 on the surface of the die substrate bonded to cold plate 215. Circuit 210 may include electrical input or output pads or contacts exposed to TSV 245 to reach upward from first substrate 260 below die 105 to the bottom of circuit 210. Die 105 may include any number of electrical input or output pads that may be axially aligned with TSV 245 and electrically coupled to TSV 245 via bonding pad 310. Bonding pad 310 may include electrical pads or contacts that provide electrical connection between circuit 210 and TSV 245. Bonding pad 310 may include any conductive structure or surface corresponding to input or output signal or power line of circuit 210 that may be electrically coupled to TSV 245. Bonding pad 310 may be formed on the surface bonded at bonding interface 220 to facilitate improved electrical contact between portions of the formed TSV. The TSVs 245 of the cold plate 215 may contact and connect with the bond pads 310 on the device die, for example using copper bonding. In this configuration, the cold plate 215 may be placed adjacent to the die 105, forming direct or intimate physical contact.

[0075] The signal density of the TSVs 245 may be based on or related to the diameter of the TSVs 245. For example, the TSVs 245 may have a diameter between 1um and 50um, such as a 10um diameter. The TSVs 245 may be distributed along the cooling fins 240 at a pitch between 10um and 1000um. For example, given the example metal density specification, a 5um diameter TSV 245 may have a 45um pitch, which may be centered along the cooling fins 240. In some aspects, the cooling fins 240 may include multiple columns of TSVs 245 of any size (e.g., diameter) and distributed according to any pitch. As TSV integration specifications evolve to allow for smaller pitches, those new specifications may be used.

[0076] The channel 250 may be constructed to have any height or width. For example, the height of the fluid channel 250 and the height of the fin 240 may be between 10um and 1000um, such as 300um. For example, the TSV 245 may be designed such that its diameter is about 10 to 15 times smaller than its height, such as having an aspect ratio between 8:1 and 15:1. The channel 250 may have a cross-section that may be sized and shaped to minimize fluid impedance and cold plate pressure drop. For example, the width of the channel 250 (e.g., the size parallel to the plane of the die 105 or the bonding interface 220) may be between 10um and 5000um, such as between about 50um and 200um.

[0077] The cooling fins 240 may have a width that may be wide enough to accommodate the TSVs 245 (e.g., to provide a bonding surface), but also narrow enough to maximize the number of fins packed into the device or maximize the cross-section of the channel 250 and the flow rate of the fluid 255. For example, if the TSV is designed to be 10um in diameter, the cooling fins 240 may have a width between 50um and 100um. The arrangement, shape, and distribution of the cooling fins 240 may be such that it maximizes the pass-through area of ​​the TSVs 245 and maximizes fluid conduction. High conduction flow (e.g., fluid flux) and high TSV density may be optimized against each other. For example, for higher heat transfer characteristics, the surface area of ​​the channel 250 and the fluid 255 flow rate may be larger, thereby limiting the area or number of TSVs 245. For example, when the number of TSVs 245 is larger, the cross-section of the channel 250 and the fluid 255 flux may be reduced, thereby allowing a larger area of ​​the TSVs 245.

[0078] As shown in cross-sectional view 306, when it is desired to increase the cross-section of a cooling channel 250 (e.g., increase the cooling fluid 255 flux) to increase heat transfer, multiple channels 250 can be combined into a combined channel 290. For example, a combined channel 290 can be formed by aligning two matching (e.g., mirror image) channels 250 in two substrates so that the resulting height of the combined channel 290 can be increased. The height of the combined channel 290 can include the height of the first channel 250 in the first substrate 260 and the height of the second channel 250 in the second substrate 265. By aligning the two etched channels 250 and bonding their respective surfaces of the substrates (e.g., 260 and 265), a resulting combined channel 290 having the combined height of the two channels 250 can be formed.

[0079] Technical solutions may increase the height of the combined channel 290 and increase the cross section by thickening the wafer substrate or etching deeper channels. Technical solutions may use multiple (e.g., three or more) wafer substrates bonded together and by etching through intermediate wafers to create a larger cross-section combined fluid channel 290. For example, the combined channel 290 may include one or more intermediate substrates that are fully drilled or through-etched to be placed above and below each other (e.g., between the top and bottom substrates) to further increase the size of the cross section and the resulting flux of the fluid 255. These stacking solutions can be used to reduce the TSV pitch by reducing the diameter of the TSVs used for the connection. For a given aspect ratio, the TSV diameter can be reduced and therefore the minimum pitch can also be reduced.

[0080] In semiconductor device design, optimizing the diameter and pitch of TSVs 245 may be achieved using an aspect ratio (AR) corresponding to a ratio of the depth (e.g., height) of TSVs 245 to their diameter and a global density (GD) corresponding to a ratio of the area of ​​TSVs 245 to the total area. The maximum single substrate thickness may be determined by the maximum depth of TSVs 245, which may be based on the diameter of the TSVs. The total thickness of the substrate may be determined by the sum of the depth of the channel 250 and the thickness of the substrate base thickness (e.g., when the substrate base of the substrate provides the bottom surface of the channel 250). The ratio of the total thickness to the substrate thickness may correspond to the minimum number of substrates used to achieve the desired composite substrate 205 structure.

[0081] In addition, the TSV diameter (d), the spacing between TSVs, and the derating factor, which may correspond to the depth or height loss of the TSVs 245 during processing, may affect the size and structural design. The through-thickness layer (TTL) area may be determined using the square of the pitch of the TSVs 245 (e.g., pitch^2). AR may correspond to the TSV depth divided by d (TSV diameter). The pitch may be equal to the sum of d (TSV diameter) and s (e.g., the spacing between TSVs 245). The number of substrates combined to form the composite substrate 205 may be determined using the total TTL thickness divided by the product of the TSV depth and the derating factor (which may be rounded to the nearest integer value).

[0082] The design and size of the structure of the technical solution may be determined based on the relationship of various features. Because the numerical value of the feature size may be based on the state of the processing capability, it should be understood that the process may be improved over time, thereby affecting some correlations (e.g., ratios). For example, the aspect ratio (AR) of the depth of TSV 245 to the diameter of TSV 245 may be between 10:1 and 12:1. Thus, when the diameter of TSV 245 is 10um, the depth of TSV 245 may be 100 to 120um, which may result in a maximum substrate thickness of about 100 to 120um.

[0083] Likewise, the pitch representing the spacing between TSVs 245 may be in the range of from 50 to 200 microns, such as, for example, 100 um. The channel height, bottom thickness, and derating factor may be in the range of 100 to 300 microns, 50 to 200 microns, and 0.90 to 0.97, respectively, with example values ​​for the height of channel 250 being 250 um, the bottom thickness being 100 um, and the derating factor being 0.9. The derating factor may correspond to the ratio of the substrate thickness reduced by processing, such as polishing or grinding the substrate for a bonding process.

[0084] In an example, the maximum TSV diameter may be set to 14um, reflecting the diameter based on the specified AR and pitch values. The maximum TSV depth (e.g., TSV height) may be determined (e.g., based on the TSV diameter and AR) to be 170um in view of the height or depth of the channel 250 (e.g., 250um) and the bottom thickness constraint (e.g., 100um). For a channel depth of 250um and a bottom thickness of 100um, a total TTL thickness of 350um may be determined. The number of stacked wafers for a given TSV size may be calculated using the formula Number of Substrates = Rounded Up (TTL Thickness / (TSV Depth * Derating Factor)), taking into account the derating factor to compensate for TSV losses during processing. In this example, the number of stacked wafers may be determined to be 3, indicating that the minimum number of substrates required to achieve the desired TTL thickness is 3 substrate wafers.

[0085] Solution Description A systematic approach for optimizing the design of through silicon vias (TSVs) within semiconductor devices is presented, providing practical insights and computational methods. First, the utilization of aspect ratio (AR) and global density (GD) metrics are highlighted as key strategies for improving TSV diameter and pitch. These metrics serve as guidelines to ensure efficient electrical connections and effective heat dissipation within semiconductor devices. For example, if AR is specified as 5:1 and GD is specified as 0.8, then the designer can adjust the TSV diameter and pitch accordingly to meet the desired performance goals.

[0086] Figure 4 Additional examples of one or more systems, devices, or structures implemented in a composite substrate 205 are described. In example 402, a cross-sectional view of a cold plate 215 of a composite substrate 205 composed of five substrates is described. The composite substrate 205 of view 402 may include substrates 260, 265, 270, 275, and 280 bonded to one another along four bonding interfaces 220. The cooling fins 240 may be formed according to matching pitches (e.g., matching sizes and shapes) in each of the substrates 260-280. This may allow the fins 240 to be stacked on top of one another, thereby forming an extended combined cooling fin 240 beside or adjacent to a combined channel 290. The combined fin 240 may include a combined TSV 295, which may be formed within, through, or otherwise physically contact all five substrates (e.g., 260-280) of the composite substrate 205 along with the combined channel 290.

[0087] As shown in example 402, the cross-section of combined channel 290 can be extended to any length by combining or stacking any number of substrates, such as substrates 260-280. Because intervening TSVs 245 can be aligned and interconnected to form a combined TSV 295 through the entire stack, the final structure can vary both the height and width of combined channel 290 regardless of how many substrates are used in the stack, thereby accommodating various ranges of fluid flux for designs with any range of heat fluxes and specifications.

[0088] In example 404, a cross-sectional view of a composite substrate 205 having any number "N" of bonded substrates is provided. The composite substrate 205 of view 404 may include any number of substrates 260 up to N to form a cold plate 215. Because the fins 240 may be aligned and matched (e.g., mirror images of each other), the fins 240 may be stacked to form a combined fin to form the sidewalls of the combined channel 290 and provide a material through which the combined TSV 295 may be etched and formed using deposited metal material.

[0089] In some designs, the number of substrates used in a stack (e.g., composite substrate 205) can be determined based on the thermal excursions that can be introduced by the bonding layers at the bonding interfaces 220 between the various substrates. For example, if a thermal excursion of a particular thermal resistance is added or introduced at each bonding interface 220, then the desired (e.g., optimal) number of substrates used in the stack can be based at least on the introduced thermal excursions. For example, when determining the number of substrates to include, the determination can be based on the cross-sectional area of ​​the combined channel 290 and the sum of the thermal excursions introduced at the bonding interfaces 220 per given surface area (e.g., circuit 290 area).

[0090] Figure 5 Description and Figure 2 202 in FIG. 20. As shown in view 502, composite substrate 205 may include circuit 210 having TSV 245 bonded to circuit 210 through a bottom portion of circuit 210. TSV 245 may pass through first substrate 260 (e.g., die 105) and second substrate 265 bonded to first substrate 260 and third substrate 270 bonded to second substrate 265. Fluid channel 250 may be formed in the second substrate and may be capped or sealed at its bottom end by a top surface of third substrate 270.

[0091] Cross-sectional view 504 may provide a top view of composite substrate 205 cut along channel 250 (e.g., through a lower portion of second substrate 265). In top view 504, cross-sectional line AA illustrates a horizontal cut along TSV 245 and channel 250, a cross section of which is shown in view 506 at cross-sectional view AA. In view 506, TSV 245 of first substrate 260 and TSV 245 of second substrate 265 are shown vertically or axially aligned with each other such that they form combined TSV 295 by physically touching end-to-end (e.g., without intervening pads or other laterally offset conductive connectors).

[0092] View 508 may correspond to a cross section along the longitudinal BB cross section line at view 504. Unlike view 506 where the TSVs 245 of the first and second substrates 260 and 265 are aligned with each other, at view 508, the TSVs 245 of the first and second substrates 260 and 265 are not aligned with each other because they have different pitches along the BB line. In such an example, TSV pads 305 may be used between the TSVs 245 to provide electrical connections.

[0093] Figure 6An example system, device, or structure 600 is provided depicted in views 602, 604, and 606. The cross-sectional view 602 may include a first substrate 260 bonded to a second substrate 265 via a bonding interface 220. The first and second substrates 260 and 265 may each include TSVs 245 etched vertically relative to the surfaces of the substrates 260 and 265. The bonding interface 220 may include a bonding region 510 where bonding between the substrates 260 and 265 may occur. The bonding region 510 may include TSV pads 305 of various sizes and shapes that facilitate electrical connection between the laterally offset TSVs 245 between the bonded substrates.

[0094] At cross-sectional view 602, first substrate 260 may be bonded to second substrate 265 via bonding interface 220 at bonding region 510. TSVs 245 of first and second substrates 260 and 265 may be vertically or coaxially aligned with each other, thus forming electrical contacts and combined TSVs 295 after bonding without using any TSV pads 305.

[0095] In the cross-sectional view 604, in another configuration, the first substrate 260 may be bonded to the second substrate 265 using the TSV pad 305 of each of the connections of the TSV 245 at the same bonding region 510. Thus, each of the combined TSVs 295 is formed by electrically connecting the TSV 245 via the TSV pad 305. As shown on the left side of the 604 image, the TSV pad 305 may include a conductive pad formed in or on one of the bonded substrates, such as the first substrate 260. For example, the TSV pad 305 may be adjacent to and formed within the first substrate 260 and may be smoothed using the surface of the first substrate 260 bonded to the second substrate 265. As shown, for example, in the right TSV pad 305, the TSV pad 305 may include two portions, each of which may be adjacent to and formed with each of the bonded substrates 260 and 265. Then, after bonding, the two portions of the TSV pad 305 may be brought into contact to form a combined TSV 295 .

[0096] At 606, the combined TSV 295 may be formed using any number of TSV pads 305 formed within the bonding region 510 of the first substrate 260 or the second substrate 265. As shown, for example, on the left example, the TSV pad 305 may include multiple portions within the first substrate 260 to electrically connect the offset TSVs 245 of the substrates 260 and 265. As shown, for example, on the right example, the TSV pad 305 may include multiple components to facilitate forming the combined TSV 295 by electrically connecting a single TSV 245 from the first substrate 260 with multiple (e.g., two or more) TSVs 245 of the second substrate 265 via one or more TSV (e.g., bonding) pads 305.

[0097] FIG. 7 illustrates a method for making or forming an apparatus, system, or structure (e.g. Figures 1 to 6 An example 700 of a method or process flow of an exemplary device, system, or structure shown, described, or discussed in the . The process flow may include forming or manufacturing a plurality of substrates having fluid channels 250 for convection cooling alongside TSVs 245 for facilitating electrical connections. The exemplary manufacturing flow 700 may use Fig. 7A The cross-sectional views 702, 704, 706 and Figure 7B 708 and 710 in FIG.

[0098] At view 702, the manufacturing process may include depositing a silicon-based dielectric and patterning and etching cavities or holes for TSVs 245 to form TSVs 245 within fourth substrate 275. For example, a mask may be used to expose the surface of the substrate and have one or more TSV holes or cavities etched into fourth substrate 275. The TSV cavities or holes may be etched according to a diameter determined based on a predetermined aspect ratio (e.g., 10:1) for a given size of the structure. After etching, the manufacturing process may include depositing isolation and seed layers into the cavities and then metal materials filling the cavities and forming TSVs 245. The same process may be performed on all substrates used for composite substrate 205.

[0099] At view 704, the manufacturing process may stack or bond the third substrate 270 with the fourth substrate 275, aligning the TSVs 245 of the two substrates with each other to begin forming the combined TSV 295. For example, when aligning the third substrate 270 with the fourth substrate 275, the previously etched and filled TSVs 245 from the third and fourth substrates may be aligned with each other so that the TSVs 245 contact each other to form the combined TSV 295. In some examples, the channel 250 may be etched in each of the third and fourth substrates before the third and fourth substrates are bonded to each other, thereby forming the combined channel 290 after bonding the substrates. In some examples, both the channel 250 and the TSV 245 may be etched into each individual substrate before the substrates are bonded. For example, the TSVs 245 may be etched first, then the channel 250 may be etched in each of the individual substrates used in the stack, and then the substrates may be stacked to form the composite substrate 205. In some examples, TSVs 245 may be etched after etching channels 250 in each of the individual substrates used in the stack, and then the substrates are stacked to form a composite substrate 205. For example, third substrate 270 may be bonded to a temporary carrier wafer for stability. Third substrate 270 may be thinned to expose TSVs 245 formed within the third substrate, after which the polished surfaces on which TSVs 245 are exposed by thinning may be aligned with the surface of fourth substrate 275, thereby aligning TSVs 245 with each other.

[0100] At view 706, a second substrate 265 may be added to the stack of the third substrate 270 and the fourth substrate 275, thereby adding to the formed combined TSV 295. The second substrate 265 may include TSVs 245 previously formed in the individual substrates before aligning the substrates and contacting the TSVs 245 of the second substrate 265 with the TSVs 245 of the third substrate. This may result in the formation of a combined TSV 295 through the second, third, and fourth substrates after the second substrate 265 is bonded to the surface of the third substrate 270. This process may use the same or similar techniques as those discussed in conjunction with view 704 to add the second substrate 265 on top of the third substrate 270. The channels 250 may be individually formed in the substrates prior to bonding. In some examples, the channels 290 may be formed into the stack with the formed combined TSV 295 by etching channels through multiple bonded substrates simultaneously. For example, after second substrate 265 is bonded to a surface of third substrate 270 , trenches or cavities of channel 250 or combined channel 290 may be etched through second substrate 265 , third substrate 270 , and fourth substrate 275 , thereby forming combined channel 290 within the cold plate 215 portion of composite substrate 205 .

[0101] exist Figure 7B 708, the first substrate 260 may be prepared with TSVs 245 etched and aligned according to the techniques discussed in view 702. The first substrate 260 may be bonded to the second substrate 265, thereby completing the combined TSVs 295 and the combined channels 290. The combined channels 290 may be formed within the second substrate 265, the third substrate 270, and the fourth substrate 275, with the surface of the first substrate 260 providing a top seal for the combined channels 290. The combined TSVs 295 may include aligned and electrically coupled TSVs 245 within each of the four substrates 260-275.

[0102] At view 710, first substrate 260 may be thinned and polished to expose the ends of combined TSVs 295 on its top surface, thereby completing cold plate 215. Combined TSVs 295 may then be aligned and coupled with contacts of circuitry 210 at die 105, which may then be bonded on the top surface of first substrate 260, thereby completing composite substrate 205.

[0103] Figure 8 Description of a method for making or forming a device, system, or structure (e.g. Figures 1 to 7B800 of a method or process flow of an exemplary device, system, or structure shown, described, or discussed in the context of FIG. The process flow may include forming or fabricating a plurality of substrates having fluid channels 250 for convection cooling alongside TSVs 245 for facilitating electrical connections and then aligning and bonding such substrates to complete a composite substrate 205. The exemplary fabrication flow 800 may be illustrated using cross-sectional views 802, 804, and 806.

[0104] At view 802, the manufacturing process may include depositing a silicon-based dielectric and patterning and etching cavities or holes for TSVs 245 to form TSVs 245 within the second substrate 265. As with the techniques discussed in view 702, masking and patterning may be used to form TSVs 245 within the etched cavities and using metal fill. Similar to the techniques discussed in conjunction with view 706, channels 250 may be patterned and etched into the surface of the second substrate, followed by wafer polishing and thinning to provide a smooth surface for bonding with the first substrate 260.

[0105] At view 804, the first substrate 260 can be formed using the same technology as that employed for the second substrate 265, resulting in alignment of the two substrates having mirror images of the TSVs 245 and channels 250 during bonding. The first substrate 260 and the second substrate 265 can be bonded so that their channels 250 and TSVs 245 are aligned and connected, thereby forming combined TSVs 295 and combined channels 290 in both the first and second substrates 260 and 265.

[0106] At view 806, the first substrate may have its open surface thinned and polished to expose the combined vias 290 and combined TSVs 295 for bonding with the die 105 having the circuit 210. At this point, the composite substrate 205 and its cold plate 215 may be complete.

[0107] Fig. 9 900 is an example of a system, structure, or device having a cold plate with microfluidic channels for backside cooling. A die 105, such as a top die or a chip on a wafer, may be disposed on a package substrate 115 along with one or more components 905. Components 905 may include other circuits, such as a die 105 having various processors, memory, and similar features. Example system 900 may include a fluid moving device 910 for pushing, forcing, or moving a fluid 255 through a fluid inlet line (FIL) 915 through a fluid channel 250 beneath the die 105. After the fluid 255 moves through the channel 250 to absorb heat from the die 105, the fluid 255 may be output from the fluid channel 250 via a fluid outlet line (FOL) 920 and returned to the fluid moving device 910.

[0108] The fluid moving device (FMD) 910 may include any combination of hardware and software for moving fluid through the channels 250. The FMD 910 may include any mechanical or electromechanical system designed to push, move, transport, or propel a cooling fluid 255 (e.g., a gas or liquid) through one or more fluid channels 250. The FMD 910 may be configured to move the fluid 255 through a fluid outlet line 920 and a fluid inlet line 915 that may be used to couple the fluid into and out of the fluid channels 250. The fluid moving device 910 may be configured to move the fluid using a pressure differential provided by gravity (e.g., using an elevated fluid reservoir). The FMD 910 may include a micropump that may use a mechanism such as piezoelectric, electrostatic, or mechanical actuation to generate fluid flow through the channels 250. The FMD 910 may include a fan or a gas or air blower (e.g., a fan that uses rotating blades to generate air flow in electronic systems) to generate airflow through the fluid channels 250 to promote gas-based convection cooling. The FMD 910 may include a heat exchanger (e.g., a refrigeration device) for cooling the fluid moving through the FIL 915 and the FOL 920 to reduce the temperature of the fluid 255 and improve heat transfer. The FMD 910 may include a fluid inlet line 915 that couples the fluid 255 at a first (e.g., lower or cooler) temperature to the inlet 225 and receives the fluid 255 at a second (e.g., higher or hotter) temperature from the fluid outlet line 920 via the outlet 230. The FMD 910 may include a water or liquid cooling circulation system with a heat exchange system to cool the fluid 255 received from the cold plate 215 and add the cooling fluid 255 back to the cold plate 215.

[0109] The technical solution may include the fluid channels 250 in the recessed cold plate and the interposer of the plate and components on the package substrate with the top die 105. The technical solution may include a hybrid bonding interface at the channel surface and TSVs on at least one side. For example, the solution may include a channel within at least one side of the fluid channel with a bonding interface. The solution may include the shape of the cooling fins to enable multiple TSVs to pass through. The solution may use TSVs to connect or bond pads at the channel hybrid bonding interface. The use of TSVs outside the microchannel area (outside the fins) may be implemented, for example, to couple to other circuits or substrates.

[0110] Fig.10 is an example flow chart of a method 1000 for providing a cold plate for cooling and electrically integrating a heating circuit using a combined cooling channel and a combined through-surface via (TSV) formed in a composite substrate. The method 1000 may be implemented or used to produce, form or provide any system, device or structure and combination thereof. Figures 1 to 9 Method 1000 may be implemented together with or in combination with method 700 (including any operations or actions of method 700). For example, method 1000 may include a method for implementing Figures 1 to 9 The method may include etching contacts into a first substrate. In 1010, the method may include etching contacts into a second substrate. In 1015, the method may include etching channels between electrical contacts. In 1020, the method may include etching contacts into a third substrate. In 1025, the method may include bonding the first, second, and third substrates to combine the contacts and channels.

[0111] In 1005, the method may include etching contacts into the first substrate. The method may include etching a first plurality of electrical contacts (e.g., through substrate vias or TSVs) such that they are oriented vertically relative to a first surface of the first substrate including the circuit. Etching the electrical contacts or TSVs into the first substrate may include etching long cavities into the surface of the substrate. These cavities may have a diameter, which may have any top-view cross-sectional shape, such as including circular, elliptical, square, or rectangular. The diameter of the cavity may be about at least 2, 3, 4, 5, 10, 12, or 15 times smaller than the depth (e.g., height) of the cavity. For example, for a design of a cavity for a TSV having a depth to diameter ratio of about 10:1 to 12:1 (e.g., an aspect ratio of 10 to 12), the cavity may have a diameter of 14um and a depth (e.g., the height of the TSV) of about 165 to 170um. The cavity may be etched vertically relative to the surface of the first substrate on which the cavity is etched (e.g., oriented vertically inward toward the wafer). The cavities may also be etched at various angles, such as at least 5°, 10°, 15°, 20°, 25°, 30°, 45°, 50°, 60°, or greater than 60° relative to the surface of the first substrate or a normal axis perpendicular to the surface.

[0112] To form electrical contacts (e.g., TSVs) within the cavities of the first substrate, the cavities may be filled with any conductive material (e.g., including copper or aluminum). The substrate may include any substrate, including a silicon wafer substrate, a glass substrate, a silicon carbide substrate, a gallium or gallium arsenide substrate, a quartz substrate, a polymer substrate, a ceramic substrate, a fused silica substrate, or a flexible substrate. The cavity may include a seed material, such as tungsten, titanium, titanium nitride, tantalum, or tantalum nitride, and it may be mixed with a metallic material. TSVs may also be formed using semiconductor materials that are sufficiently doped to act as electrical conductors for signal transmission purposes. TSVs may be formed by filling or depositing a conductive material into the cavity. Electrical contacts (e.g., TSVs) may be arranged along any pitch (e.g., a distance between 40um and 250um between each TSV).

[0113] The method may include providing a device die including a circuit that generates heat. The device die may include an interconnect layer that may be disposed on or adjacent to a surface of a first substrate, the first substrate including at least a portion of a surface arranged or configured to be in physical contact with a fluid within one or more channels formed within the composite substrate. The first substrate may include or be electrically or thermally coupled to a die of any circuit that generates heat and causes a temperature increase. For example, the first substrate may include or be electrically or thermally coupled to an integrated circuit (IC), which may be formed or produced on or adjacent to a first surface of a first substrate (e.g., on which TSVs are formed) or formed or produced on or adjacent to a second surface opposite to the first surface of the first substrate (e.g., on the other side of the first substrate). The circuit may generate milliwatts or watts of heat, which may result in a temperature of the die of about 70 to 150° C. or in some examples exceeding 150° C.

[0114] The method may include forming one or more pads for connecting the TSV to the TSV of another substrate (e.g., a second substrate). The pad may be formed by etching a flat surface (e.g., a circle, rectangle, or square) to fill with a conductive material (e.g., a metal) to facilitate the connection between two TSVs of two substrates bonded into a composite substrate. For example, the one or more pads may be formed using a conductive material between one or more of a first plurality of electrical contacts of the first substrate and one or more of a second plurality of electrical contacts of the second substrate. The pad may be configured or arranged into the first substrate (or the second substrate, or both) so that one or more of the first plurality of electrical contacts (e.g., TSVs) may be electrically coupled to one or more of the second plurality of electrical contacts (e.g., TSVs of the second substrate) via the one or more pads.

[0115] The method may include forming an inlet or at least a portion of an inlet in or through the first substrate to input a cooling fluid into one or more channels. The method may include forming an outlet or at least a portion of an outlet through the first substrate to output the cooling fluid from the one or more channels. For example, the inlet may include one or more cavities etched through the first substrate from any direction (e.g., the top surface, the bottom surface, the side surface, or any angle) to connect to one or more cooling channels in the composite substrate (e.g., below the first substrate) to conduct the cooling fluid and cool the circuit.

[0116] In 1010, the method may include etching contacts into the second substrate. The method may include etching a second plurality of electrical contacts (e.g., TSVs) perpendicularly relative to the first surface of the second substrate. The second plurality of electrical contacts (e.g., TSVs) may be etched into the second substrate using the same or similar methods as the first plurality of electrical contacts discussed in conjunction with 1005. The second plurality of electrical contacts may be etched according to an aspect ratio, pitch, and TSV diameter that matches the aspect ratio, pitch, and TSV diameter of the first plurality of electrical contacts. For example, the second plurality of electrical contacts may have an arrangement in the plane of the first surface of the second substrate such that it is a mirror image of the arrangement of the TSVs in the first surface of the first substrate. For example, when the first surface of the first substrate and the first surface of the second substrate are bonded, the resulting bonded first and second substrates may form their combined TSVs such that they conduct electricity from the second surface of the first substrate to the second surface of the second substrate (e.g., via the bonding surface).

[0117] The method may include etching a fourth plurality of electrical contacts (e.g., TSVs) through the fourth substrate and perpendicularly relative to the first surface of the fourth substrate. The TSVs in the fourth substrate may be etched using the same or similar techniques as the electrical contacts or TSVs in the first substrate. The electrical contacts of the fourth substrate may also be arranged so that they are aligned with the first plurality of electrical contacts of the first substrate and the second plurality of electrical contacts of the second substrate so that after bonding, the combined TSVs may run through the first, second, and fourth substrates in a straight line or from the start point of each of the first TSVs to the end point of each of the fourth TSVs without conductive interruption.

[0118] The method may include forming one or more pads using a conductive material between one or more of the first plurality of electrical contacts of the first substrate and one or more of the second plurality of electrical contacts of the second substrate. One or more of the first plurality of electrical contacts may be electrically coupled to one or more of the second plurality of electrical contacts via the one or more pads. The method may include forming an inlet or at least a portion of an inlet in or through the second substrate to input a cooling fluid into the one or more channels. The method may include forming an outlet or at least a portion of an outlet through the second substrate to output a cooling fluid from the one or more channels.

[0119] In 1015, the method may include etching one or more channels between the electrical contacts. The method may include etching one or more channels between the second plurality of electrical contacts and through the second substrate. The one or more channels may be oriented perpendicular to the second plurality of electrical contacts. For example, the channels may be oriented beside fins that may include portions of the first substrate or the second substrate through which the TSVs are formed. The fins may form sidewalls of the one or more channels.

[0120] The method may include etching a single channel between perpendicular or vertically oriented TSVs. The channel may be disposed below a circuit that generates heat. The channel may be oriented perpendicular to the TSVs so that it may run through the thickness of a composite substrate formed by bonding any combination of at least a first, second, and third substrate. The channel may have a cross-section of any shape, such as a rectangular, square, circular, or oval. The channel may have any pattern through which a cooling fluid may move, such as a straight line, a curve, a zigzag, a spiral, or any other shape.

[0121] The method may include etching a second one or more channels between the fourth plurality of electrical contacts and through the fourth substrate. The second one or more channels may be oriented perpendicular to the fourth plurality of electrical contacts. The second one or more channels may be joined and combined with the first one or more channels to form a combined channel having a combined (e.g., larger) cross-section and allowing for improved fluid flux and heat dissipation capabilities through the one or more combined channels.

[0122] The method may include forming a plurality of fins using at least a second substrate. The plurality of fins may include substrate material (e.g., material of the first, second, third, and fourth substrates). The plurality of fins may include at least a first fin of the plurality of fins separated from at least a second fin of the plurality of fins by a channel of one or more channels (e.g., a first channel, a second channel, or a combined channel). Each of the first fin and the second fin forms a portion of a sidewall of the channel and may include at least one electrical contact of a second plurality of electrical contacts that passes through the height of each respective fin.

[0123] In 1020, the method may include etching contacts into the third substrate. The method may include etching a third plurality of electrical contacts (e.g., a third plurality of TSVs) perpendicular to the first surface of the third substrate. The third plurality of electrical contacts (e.g., TSVs) may be etched into the third substrate using the same or similar methods as the first plurality of electrical contacts discussed in conjunction with act 1005 or the second plurality of electrical contacts (e.g., a second plurality of TSVs) discussed in conjunction with act 1010. The third plurality of electrical contacts may be etched according to an aspect ratio, pitch, and TSV diameter that matches the aspect ratio, pitch, and TSV diameter of the first or second plurality of electrical contacts. For example, the third plurality of electrical contacts may have an arrangement in the plane of the first surface of the third substrate such that it is a mirror image of the arrangement of the TSVs in the first surface of the first substrate or the first surface of the second substrate. For example, when the first surface of the third substrate and the second surface of the second substrate are bonded, the resulting composite substrate (including at least the first, second, and third substrates) may form its combined TSVs such that they conduct electricity from the second surface of the first substrate to the second surface of the third substrate (e.g., via the bonding surface) without any conductive interruption.

[0124] In 1025, the method may include bonding the first, second, and third substrates to combine contacts and channels. The method may include bonding the first substrate to the second substrate and bonding the second substrate to the third substrate to form at least a portion of the combined substrate. The method may include bonding the first substrate to the second substrate and the third substrate to electrically couple a heat-generating circuit to a third plurality of electrical contacts (e.g., TSVs in the third substrate) via a first plurality of electrical contacts (e.g., TSVs in the first substrate) and a second plurality of electrical contacts (e.g., TSVs in the second substrate). The method may include bonding the first, second, and third substrates to form, seal, or enclose one or more channels (e.g., combined channels etched in at least two of the first, second, third, and fourth substrates) such that the channels pass through the first substrate through at least the second substrate. The combined channels may also pass through at least a portion of the third substrate or at least a portion of the first substrate or at least a portion of both the first and third substrates and the second substrate. The one or more channels may dissipate heat generated by the circuit to a fluid moving through the one or more channels via one or more fins.

[0125] The method may include forming a first bond between a first surface of a first substrate and a first surface of a second substrate to couple a first plurality of electrical contacts to a second plurality of electrical contacts. The method may include forming a second bond between a first surface of a third substrate and a second surface of the second substrate opposite to the first surface of the second substrate to couple the second plurality of electrical contacts to a third plurality of electrical contacts. The method may include configuring one or more channels to accommodate a cooling fluid that moves through the one or more channels to dissipate heat generated by the circuit from the circuit. The one or more channels may be configured to physically contact the cooling fluid with at least a portion of the first surface of the first substrate.

[0126] The method may include bonding a fourth substrate to the second substrate to couple the second one or more channels of the fourth substrate and the one or more channels of the second substrate to form one or more combined channels. The one or more combined channels may pass through at least the second substrate and the fourth substrate that may be bonded to the second substrate. For example, the fourth substrate may be bonded between the second substrate and the third substrate, thereby sharing one or more combined channels with the second substrate. The one or more combined channels may include a cross-section whose height includes the sum of the first height of the one or more channels in the second substrate and the second height of the second one or more channels in the fourth substrate. The cross-section may have a width corresponding to at least one of the first width of the one or more channels or the second width of the second one or more channels. The method may include configuring the circuit to receive power for operating the circuit via a third plurality of electrical contacts, and the third plurality of electrical contacts are coupled to the circuit via the first plurality of electrical contacts and the second plurality of electrical contacts.

[0127] When an element is referred to herein as being "connected" or "coupled" to another element, it is understood that the element may be directly connected or coupled to the other element or have intervening elements present between the connected or coupled elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, it is understood that there are no intervening elements in the "direct" connection between the elements. However, the presence of a direct connection does not exclude other connections in which intervening elements may be present.

[0128] When an element is referred to herein as being in "thermal contact" with another element, it is understood that the element may be in direct or physical contact or coupling with the other element or may have an intervening material, layer, object or element present between the two elements. In contrast, when an element is referred to as being in "direct thermal contact" with another element, it is understood that there are no intervening elements in the "direct" connection between the elements. However, the presence of direct thermal contact does not exclude other thermal contacts in which there may be intervening elements.

[0129] When an element is referred to herein as being "disposed" below or above a particular element, it is understood that the element may be located or positioned directly above or below another element or have an intervening element present between the two elements. In contrast, when an element is referred to as being "directly disposed" above or below another element, it is understood that there are no intervening elements in the "direct" arrangement between elements. However, the presence of a direct arrangement does not exclude other arrangements in which there may be intervening elements.

[0130] Reference to "or" may be interpreted as inclusive, such that any term described using "or" may indicate any of a single, more than one, and all of the described terms. Reference to at least one of a conjunction list of terms may be interpreted as an inclusive "or" to indicate any of a single, more than one, and all of the described terms. For example, reference to "at least one of 'A' and 'B'" may include only "A," only "B," and both "A" and "B." Such references used in conjunction with "includes" or other open terms may include additional items.

[0131] It should be noted that certain paragraphs of the present disclosure may refer to terms such as "first" and "second" in conjunction with a subset of transmission spatial streams, sounding frames, responses, and devices to identify or distinguish them from each other. These terms are not intended to relate entities (e.g., first substrate and second substrate) only in time or according to a sequence, but in some cases, these entities may include such a relationship. These terms also do not limit the number of possible entities (e.g., delay circuits, filters, peak detectors) that may operate within a system or environment. It should be understood that the above-described systems may provide multiple of any or each of these components and that these components may be provided on a standalone structure or device or, in some embodiments, multiple structures or devices in a distributed system.

[0132] Although the above written description of the method and system enables a person of ordinary skill in the art to make and use the embodiments thereof, a person of ordinary skill in the art should understand and appreciate the variations, combinations, and equivalents of the specific embodiments, methods, and examples presented herein. Therefore, the method and system of the present invention should not be limited to the above-described embodiments, methods, and examples, but to all embodiments and methods within the scope and spirit of the present disclosure.

Claims

1. A system comprising: a first substrate comprising circuitry coupled to a first plurality of electrical contacts etched vertically relative to a first surface of the first substrate; A second substrate comprising: a second plurality of electrical contacts etched through the second substrate perpendicularly relative to the first surface of the second substrate; and one or more vias etched between the second plurality of electrical contacts and through the second substrate and oriented perpendicular to the second plurality of electrical contacts; and a third substrate comprising a third plurality of electrical contacts etched perpendicular to a first surface of the third substrate, wherein the one or more vias pass through at least the second substrate and are enclosed by the first substrate, the second substrate, and the third substrate; and Wherein the circuit is electrically coupled with the third plurality of electrical contacts via the first plurality of electrical contacts and the second plurality of electrical contacts and the channel is configured to dissipate heat generated by the circuit.

2. The system according to claim 1, comprising: a first bond between the first surface of the first substrate and the first surface of the second substrate for coupling the first plurality of electrical contacts with the second plurality of electrical contacts; and A second bond between the first surface of the third substrate and a second surface of the second substrate opposite the first surface of the second substrate is used to couple the second plurality of electrical contacts with the third plurality of electrical contacts.

3. The system of claim 1, wherein the one or more channels are configured to accommodate a cooling fluid that moves through the one or more channels to dissipate the heat generated by the circuit away from the circuit.

4. The system of claim 1, wherein the one or more channels are configured to bring a cooling fluid contained within the one or more channels into physical contact with at least a portion of the first surface of the first substrate.

5. The system according to claim 1, comprising: a fourth substrate; a fourth plurality of electrical contacts etched through the fourth substrate and perpendicularly relative to the first surface of the fourth substrate; and and a second one or more channels etched between the fourth plurality of electrical contacts and through the fourth substrate and oriented perpendicular to the fourth plurality of electrical contacts, wherein the fourth substrate is joined to the second substrate to couple the second one or more channels of the fourth substrate and the one or more channels of the second substrate to form one or more combined channels, the one or more combined channels passing through at least the second substrate and the fourth substrate.

6. A system according to claim 5, wherein the one or more combined channels include a cross-section, the height of the cross-section includes the sum of a first height of the one or more channels and a second height of the second one or more channels, and the cross-section has a width corresponding to at least one of the first width of the one or more channels or the second width of the second one or more channels.

7. The system according to claim 1, comprising: A plurality of fins are formed using at least the second substrate, the plurality of fins comprising at least a first fin of the plurality of fins separated from at least a second fin of the plurality of fins by a channel in the one or more channels, each of the first fin and the second fin forming a portion of a sidewall of the channel and comprising at least one of the second plurality of electrical contacts passing through the height of each respective fin.

8. The system according to claim 1, comprising: A device die includes the circuit, wherein the device die includes an interconnect layer disposed on or adjacent to a second surface of the first substrate.

9. The system according to claim 1, comprising: A device die includes the circuit having an interconnect layer disposed on or adjacent to the first surface of the first substrate, wherein at least a portion of the first surface is configured to be in physical contact with a fluid within the one or more channels.

10. The system of claim 1, wherein the first substrate is joined to the second substrate to axially align one or more of the first plurality of electrical contacts with one or more of the second plurality of electrical contacts.

11. The system according to claim 1, comprising: One or more pads comprising a conductive material formed between one or more of the first plurality of electrical contacts of the first substrate and one or more of the second plurality of electrical contacts of the second substrate, the one or more of the first plurality of electrical contacts being electrically coupled to the one or more of the second plurality of electrical contacts via the one or more pads.

12. The system of claim 1, wherein the circuit is configured to receive power for operating the circuit via the third plurality of electrical contacts, the third plurality of electrical contacts coupled to the circuit via the first plurality of electrical contacts and the second plurality of electrical contacts.

13. The system of claim 1, comprising: an inlet for inputting a cooling fluid into the one or more channels; and An outlet is provided for outputting the cooling fluid from the one or more channels.

14. A method comprising: etching a first plurality of electrical contacts vertically relative to a first surface of a first substrate including circuitry; etching a second plurality of electrical contacts vertically relative to the first surface of the second substrate; etching one or more vias between the second plurality of electrical contacts and through the second substrate, the one or more vias being oriented perpendicular to the second plurality of electrical contacts; and etching a third plurality of electrical contacts perpendicular to the first surface of the third substrate; The first, second and third substrates are joined to electrically couple the circuit with the third plurality of electrical contacts via the first and second plurality of electrical contacts and the one or more channels passing through at least the second substrate are enclosed by the first, second and third substrates to dissipate heat generated by the circuit.

15. The method according to claim 14, comprising: forming a first bond between the first surface of the first substrate and the first surface of the second substrate to couple the first plurality of electrical contacts with the second plurality of electrical contacts; forming a second bond between the first surface of the third substrate and a second surface of the second substrate opposite the first surface of the second substrate to couple the second plurality of electrical contacts with the third plurality of electrical contacts; and The one or more channels are configured to contain a cooling fluid that moves through the one or more channels to dissipate the heat generated by the circuit away from the circuit, wherein the one or more channels are configured to bring the cooling fluid into physical contact with at least a portion of the first surface of the first substrate.

16. The method according to claim 14, comprising: etching a fourth plurality of electrical contacts through the fourth substrate and vertically relative to the first surface of the fourth substrate; and etching a second one or more vias between the fourth plurality of electrical contacts and through the fourth substrate, the second one or more vias being oriented perpendicular to the fourth plurality of electrical contacts; The fourth substrate is joined to the second substrate to couple the second one or more channels of the fourth substrate and the one or more channels of the second substrate to form one or more combined channels, and the one or more combined channels pass through at least the second substrate and the fourth substrate, wherein the one or more combined channels include a cross-section, the height of the cross-section includes the sum of a first height of the one or more channels and a second height of the second one or more channels, and the cross-section has a width corresponding to at least one of the first width of the one or more channels or the second width of the second one or more channels.

17. The method according to claim 14, comprising: A plurality of fins are formed using at least the second substrate, the plurality of fins comprising at least a first fin of the plurality of fins separated from at least a second fin of the plurality of fins by a channel in the one or more channels, each of the first fin and the second fin forming a portion of a sidewall of the channel and comprising at least one of the second plurality of electrical contacts passing through the height of each respective fin.

18. The method according to claim 14, comprising: providing a device die comprising the circuit, wherein the device die includes an interconnect layer disposed on or adjacent to at least one surface of the first substrate, the at least one surface including at least a portion of the at least one surface configured to be in physical contact with a fluid within the one or more channels; and One or more pads are formed using a conductive material between one or more of the first plurality of electrical contacts of the first substrate and one or more of the second plurality of electrical contacts of the second substrate, and the one or more of the first plurality of electrical contacts are electrically coupled to the one or more of the second plurality of electrical contacts via the one or more pads.

19. The method according to claim 14, comprising: forming an inlet to input a cooling fluid into the one or more channels; forming an outlet to output the cooling fluid from the one or more passages; The circuit is configured to receive power for operating the circuit via the third plurality of electrical contacts, the third plurality of electrical contacts being coupled to the circuit via the first plurality of electrical contacts and the second plurality of electrical contacts.

20. A structure having a composite substrate using one or more channels to cool a circuit, the structure comprising: A composite substrate comprising: a first substrate comprising circuitry coupled to a first plurality of electrical contacts etched vertically relative to a first surface of the first substrate; A second substrate comprising: a second plurality of electrical contacts etched through the second substrate perpendicularly relative to the first surface of the second substrate; and one or more vias etched between the second plurality of electrical contacts and through the second substrate and oriented perpendicular to the second plurality of electrical contacts; and a third substrate comprising a third plurality of electrical contacts etched perpendicular to the first surface of the third substrate; and wherein the composite substrate includes a first bond between the first substrate and the second substrate and a second bond between the second substrate and the third substrate to electrically couple the circuit with the third plurality of electrical contacts via the first plurality of electrical contacts and the second plurality of electrical contacts and the one or more channels passing through at least the second substrate are enclosed by the first substrate, the second substrate and the third substrate, and the one or more channels are configured to dissipate heat generated by the circuit.

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