One-sided direct cooling power supply module

Abstract

A one-sided direct cooling power module includes a substrate including an electrically insulating layer. A first conductive region, a second conductive region, and a third conductive region are each disposed on the electrically insulating layer. The conductive regions are electrically isolated from each other. A plurality of high-side power switches are disposed on and electrically coupled to the first conductive region. A plurality of first connectors are coupled between the plurality of high side power switches and the second conductive region. A plurality of low-side power switches are disposed on and electrically coupled to the second conductive region. A plurality of second connectors are coupled between the plurality of low-side power switches and the third conductive region. A supply lead is coupled to the first conductive region via a pad.

Description

[0001] Related Applications

[0002] This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 596,178, filed on November 3, 2023, and entitled “SINGLE-SIDEDDIRECT COOLED POWERMODULE,” the contents of which are incorporated herein by reference in their entirety for all purposes. Technical Field

[0003] The described embodiments generally relate to power electronic devices containing one or more semiconductor dies. More specifically, the present embodiments relate to single-sided direct-cooled power electronic devices having semiconductor dies. Background Art

[0004] Currently, there are a wide variety of power modules for power management. A power module may include multiple semiconductor switches. The design of existing power modules may include a narrowed contact area between a direct current (DC) voltage lead frame connection and a power module substrate. The narrowed contact area may produce high stray inductance due to low current flow and high resistance through the contacts. In addition, transfer molded power modules may include signal pins attached to one side of the molded body of the power module, which may cause a short creepage distance between the signal pins. Summary of the invention

[0005] In some embodiments, the power module includes a substrate, the substrate including an electrical insulation layer. The first conductive area, the second conductive area, and the third conductive area are each disposed on the electrical insulation layer. The conductive areas are electrically isolated from each other. A plurality of high-side power switches are disposed on the first conductive area and electrically coupled to the first conductive area. A plurality of first connectors are coupled between a plurality of high-side power switches and the second conductive area. A plurality of low-side power switches are disposed on the second conductive area and electrically coupled to the second conductive area. A plurality of second connectors are coupled between a plurality of low-side power switches and the third conductive area. A power lead is coupled to the first conductive area via a pad.

[0006] In some embodiments, the spacer comprises a conductive metal.

[0007] In some embodiments, the power lead is substantially planar, and the gasket is welded between the power lead and the first conductive region.

[0008] In some embodiments, the thickness of the gasket may be greater than the thickness of the power lead.

[0009] In some embodiments, the power lead is a first DC+ lead and the pad is a first pad, and the power module further includes a second DC+ lead coupled to the first conductive region via a second pad.

[0010] In some embodiments, the power module further includes a DC- lead disposed between the first DC+ lead and the second DC+ lead. The DC- lead is electrically coupled to the third conductive region.

[0011] In some embodiments, the power module further includes a power output lead electrically coupled to the second conductive region.

[0012] In some embodiments, each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.

[0013] In some embodiments, the electronic module includes a substrate, the substrate including an electrically insulating layer. The substrate further includes a conductive layer, the conductive layer defining a first conductive region, a second conductive region, and a third conductive region and formed on the electrically insulating layer. The first conductive region, the second conductive region, and the third conductive region are electrically insulated from each other. The second conductive region defines an opening, and the third conductive region is disposed within the opening. A plurality of high-side power switches are disposed on the first conductive region and electrically coupled to the first conductive region. A plurality of low-side power switches are disposed on the second conductive region and electrically coupled to the second conductive region. The power lead is coupled to the first conductive region via a pad.

[0014] In some embodiments, the pad of the electronic module comprises a conductive metal.

[0015] In some embodiments, the power lead of the electronic module is substantially planar, and the gasket is soldered between the power lead and the first conductive region.

[0016] In some embodiments, the thickness of the gasket of the electronic module may be greater than the thickness of the power lead.

[0017] In some embodiments, the power lead of the electronic module is a first DC+ lead and the pad is a first pad, and the power module further includes a second DC+ lead coupled to the first conductive region via a second pad.

[0018] In some embodiments, the electronic module further includes a DC- lead disposed between the first DC+ lead and the second DC+ lead. The DC- lead is electrically coupled to the third conductive region.

[0019] In some embodiments, the electronic module further includes a power output lead electrically coupled to the second conductive region.

[0020] In some embodiments, each of the plurality of high-side power switches and each of the plurality of low-side power switches of the electronic module is a silicon carbide transistor.

[0021] In some embodiments, each of the plurality of high-side power switches is connected to each of the plurality of low-side power switches in a half-bridge configuration.

[0022] In some embodiments, the method for forming an electronic module includes forming an insulating layer of a substrate. The method further includes forming a first conductive area, a second conductive area, and a third conductive area on the top surface of the substrate. Each of the first conductive area, the second conductive area, and the third conductive area is electrically insulated from each other. The second conductive area defines an opening, and the third conductive area is disposed within the opening. In addition, the method includes attaching a plurality of high-side power switches to the first conductive area. The method includes electrically coupling a plurality of first connectors between a plurality of high-side power switches and the second conductive area. The method further includes electrically coupling the power switch to the second conductive area. In addition, the method includes electrically coupling a plurality of second connectors between a plurality of low-side power switches and the third conductive area. The method includes coupling a power lead to the first conductive area via a gasket.

[0023] In some embodiments, the spacers described in the methods include a conductive metal.

[0024] In some embodiments, the thickness of the gasket described in the method is greater than the thickness of the power lead. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a semi-transparent assembly diagram of the power module;

[0026] Figure 2 A semi-transparent plan view of a lead frame portion of a power module;

[0027] Figure 3A is a perspective assembly diagram of the assembled power module;

[0028] Figure 3B is an assembly diagram of a first cross section of an assembled power module;

[0029] Figure 3C is an assembly diagram of a second cross section of the assembled power module;

[0030] Figure 4A is an isometric view of a top portion of an assembled power module according to an embodiment of the present disclosure;

[0031] Figure 4B Draw Figure 4A A cross-sectional view of a portion of a power module shown in;

[0032] Figure 4C Draw as Figure 4B A similar cross-sectional view of the power module shown;

[0033] Figure 5A A top view assembly diagram of the power module after molding and assembly;

[0034] Figure 5B is a side view assembly diagram of the power module after molding and assembly;

[0035] Figure 5C A top perspective assembly view of a molded and assembled power module without a recess;

[0036] Figure 5D The figure is a bottom view assembly diagram of the power module after molding and assembly;

[0037] Figure 5E is a bottom perspective assembly view of the power module after molding and assembly;

[0038] Fig. 6A A top view assembly diagram of six sets of direct-cooled power supply assemblies;

[0039] Figure 6B A top perspective assembly diagram of six sets of direct-cooled power supply assemblies;

[0040] Figure 6C A bottom perspective assembly diagram of six sets of direct-cooled power supply assemblies;

[0041] Fig. 7A is a perspective assembly diagram of components of six sets of direct cooling modules; and

[0042] Figure 7B This is a perspective assembly diagram of the six assembled direct cooling modules. DETAILED DESCRIPTION

[0043] In some embodiments, a high power AC to DC power module includes a lead frame having DC power leads designed to be electrically connected to the power module in a manner that reduces inductance by maximizing the surface area of ​​contact, thereby reducing resistance and increasing current flow. The lead frame may include two positive DC power leads and a negative DC power lead. The negative DC power lead may be wide and include a long strip that may contact the surface of multiple metal clips on the power module. The two positive DC power leads may include tabs connected to pads on the power module. Each pad may be positioned below the tab of the positive power lead, and the entire top surface of the pad may be in electrical contact with the tab to provide a wide conductive path and reduce inductance. In some embodiments, the power module may be used in an electric vehicle, including but not limited to a traction module that provides power to a traction motor, or an AC to DC converter that converts AC energy to DC energy for charging one or more batteries.

[0044] The lead frame may also include a pin holder that may accept the signal pin after molding. The lead frame may be molded with a concave mold design that protects and covers the cavity of the pin holder during the molding process. After the molding process, the signal pin may be inserted into the pin holder. The signal pin may be a press fit pin.

[0045] Figure 11 is a semi-transparent assembly diagram of a power module 100 according to an embodiment of the present disclosure. The power module 100 may be referred to as an electronic module. The power module 100 includes a substrate 102 in a molded housing 104. A power switch 110 is welded (or sintered) to the substrate 102. In some embodiments, the power switch 110 is a silicon carbide, gallium nitride, or silicon field effect transistor (FET), and it is welded to the substrate 102 so that its drain is electrically coupled to the substrate 102. Four low-side power switches 110-1, 110-2, 110-3, and 110-4 are connected in parallel with the drain terminal welded to the substrate region 144. Although Figure 1 14. Although four low-side power switches are shown in FIG. 14, the power module 100 may include any number of low-side power switches, including a single low-side power switch. The four high-side power switches 110-5, 110-6, 110-7, and 110-8 are connected in parallel with the drain terminal soldered to the substrate region 146. Although Figure 1 1 and 2. Four high-side power switches are shown in FIG. 1 , but the power module 100 may include any number of high-side power switches, including a single high-side power switch. Substrate regions 144 and 146 are conductive and electrically isolated from each other. In some embodiments, substrate 102 may be a direct bond copper (DBC), an insulated metal substrate (IMS), or other suitable high thermal conductivity substrate.

[0046] One end of the conductive clip 112 is welded to the top (source) of the power switch 110-1, and the other end of the conductive clip 112 is welded to the substrate region 142. The substrate region 144 may define an opening, and the substrate region 142 may be disposed in the opening. One end of the conductive clip 114 is welded to the top of the power switch 110-2, and the other end of the conductive clip 114 is welded to the substrate region 142. One end of the conductive clip 116 is welded to the top of the power switch 110-3, and the other end of the conductive clip 116 is welded to the substrate region 142. One end of the conductive clip 118 is welded to the top of the power switch 110-4, and the other end of the conductive clip 118 is welded to the substrate region 142. The substrate region 142 is conductive and electrically isolated from the substrate regions 144 and 146. The substrate regions 142, 144, and 146 may be formed on an electrically insulating layer 148.

[0047] One end of the conductive clip 120 is welded to the top (source) of the power switch 110-5, and the other end of the conductive clip 120 is welded to the substrate region 144 (switch node). One end of the conductive clip 122 is welded to the top (source) of the power switch 110-6, and the other end of the conductive clip 122 is welded to the substrate region 144. One end of the conductive clip 124 is welded to the top (source) of the power switch 110-7, and the other end of the conductive clip 124 is welded to the substrate region 144. One end of the conductive clip 126 is welded to the top (source) of the power switch 110-8, and the other end of the conductive clip 126 is welded to the substrate region 144.

[0048] Clips 112, 114, 116, 118 are all of similar length so that the length of the current path for current entering and leaving the low-side power switch is equal. Clips 120, 122, 124, and 126 are all of similar length so that the length of the current path for current entering and leaving the high-side power switch is equal. Sensing conductors 128 and 130 are used as Kelvin sensing lines for power switches 110-1 to 110-4. Sensing conductors 132 and 134 are used as Kelvin sensing lines for switches 110-5 to 110-8. In some embodiments, the clips are attached first and the sensing lines are attached later. Negative thermal coefficient (NTC) thermal sensor 150 is attached to substrate 102. Conductive clips may be referred to as connectors. For example, clips 112, 114, 116, and 118 may be referred to as first connectors or second connectors. Similarly, clips 120, 122, 124, and 126 may be referred to as second connectors or first connectors.

[0049] In some embodiments, the power module 100 is configured in a half-bridge configuration or arrangement, however other suitable electrical configurations may be used. The input voltage DC (+) is electrically coupled to the drains of all high-side power switches 110-5 to 110-8 connected in parallel. The sources of the high-side power switches 110-5 to 110-9 are coupled to the drains of the low-side power switches 110-1 to 110-4 to form a switch node of the substrate region 144. The sources of the low-side power switches 110-1 to 110-4 are coupled to the ground DC (-) and are all connected in parallel.

[0050] Input voltage DC (+) power lead ( Figure 2 ) can be electrically coupled to substrate region 146 via first shims 162 and second shims 161. First shims 162 and second shims 161 can be formed of a conductive metal, such as copper. The thickness of first shims 162 can be equal to, greater than, or less than the thickness of the input voltage DC (+) power lead. Similarly, the thickness of second shims 161 can be equal to, greater than, or less than the thickness of the input voltage DC (+) power lead. Although Figure 1 Two pads are shown in FIG. 1 , but the power module 100 may include any number of pads, including a single pad. The first pad 162 and the second pad 161 may be soldered between the input voltage DC (+) power lead and the substrate region 146 . Figure 1 1 and 16. The rectangular cross-sections of the first and second gaskets 162 and 161 are shown in FIG. The cross-sections of the gaskets may take any 2-D shape, such as circular, oval, square, hexagonal, etc.

[0051] Figure 2 FIG. 1 is a semi-transparent plan view of a lead frame portion of a power module 100 according to an embodiment of the present disclosure. The lead frame is connected to the substrate 102 (see FIG. 1 ) of the power module 100 using the right positive power lead 220 and the left positive power lead 240. Figure 1 ) is connected to the DC (+) voltage. The right positive power lead 220 includes a first pad 162 (see Figure 1 ) is connected to substrate region 146 (see Figure 1 ) tab 221. The right positive power lead 220 can be substantially planar. The left positive power lead 240 includes a second gasket 161 (see Figure 1 ) is connected to the tab 241 of the substrate region 146. The left positive power lead 240 can be substantially planar. The DC (-) is connected to the substrate region 142 (see Figure 1 ). Negative power lead 230 has a connection to substrate region 142 (see Figure 1 ) of the power lead forming terminal 231. The current in the DC (+) direction through the positive power lead 220, 240 is opposite to the DC (-) current through the negative power lead 230. The two current paths are very close, thereby reducing parasitic / stray inductance. Reducing parasitic inductance improves switching characteristics. The output lead 212 is connected to the substrate area 144 (see Figure 1 ). The output lead 212 is connected to the substrate using tabs 212-1 and 212-2.

[0052] Figure 3A 1 is a perspective assembly diagram of the assembled power module 100. The lead frame connects the power module 100 to the DC (+) voltage using the right positive power lead 220 and the left positive power lead 240. The right positive power lead 220 includes a tab 221 that is connected to the second gasket 161 (see FIG. Figure 1 , the second gasket 161 is Figure 3A is directly connected to the substrate region 146 (see Figure 1 ). The second gasket 161 can be directly below the tab 221, and the entire top surface of the second gasket 161 can be in direct contact with the tab 221, thereby allowing the right positive power lead 220 to be substantially planar. The left positive power lead 240 includes a tab 241 that is connected to the first gasket 162 (see Figure 1 , the first gasket 162 is Figure 3A 146 (see FIG. Figure 1 ). The first gasket 162 can be directly below the tab 241, and the entire top surface of the first gasket 162 can be in direct contact with the tab 241, thereby allowing the left positive power lead 240 to be substantially planar. DC (-) is connected to the substrate region 142 using the negative power lead 230 (see Figure 1 ). The negative power lead 230 has a connection to the clip (for simplicity, Figure 3AThe output lead 212 is connected to the substrate region 144 (see Figure 144). The current in the DC (+) direction through the positive power leads 220, 240 is opposite to the DC (-) current through the negative power lead 230. The two current paths are very close, thereby reducing parasitic inductance. Reducing parasitic inductance can improve switching characteristics, such as speed, transient control, etc. The output lead 212 is connected to the substrate region 144 (see Figure 144). Figure 1 ). The output lead 212 is connected to the substrate using tabs 212-1 and 212-2. The power module 100 may also include a signal pin 236 and a signal pin holder 235. Figure 3A Eight signal pins and eight signal pin holders are shown, but for simplicity, only one of each is labeled. The power module 100 may include any number of signal pins and signal pin holders, including one of each. The signal pins may be conductive pins, and each signal pin may be electrically coupled to a high-side power switch 110-5, 110-6, 110-7, and 110-8 (see Figure 1 ) or coupled to the gate terminal of each of the low-side power switches 110-1, 110-2, 110-3 and 110-4 (see Figure 1 ) of each of the gate terminals. At least one of the signal pins may be a Kelvin sense terminal of the high-side power switches 110-5, 110-6, 110-7, and 110-8, and at least one of the signal pins may be a Kelvin sense terminal of the low-side power switches 110-1, 110-2, 110-3, and 110-4. Although Figure 3A , two positive power leads and a single negative power lead are shown, but the power module 100 may include any number of positive power leads and negative power leads, and the configuration of the power leads may vary. For example, the power module 100 may include a single positive power lead positioned between two negative power leads.

[0053] Figure 3B 1 is an assembly diagram of a first cross-section of an assembled power module 100. The assembled power module 100 may include a power assembly that is overmolded (e.g., encapsulated) with an electrically insulating mold material (e.g., an insulating encapsulant) formed into a molded housing 104. The right positive power lead 220 includes a tab 221 that is connected to the substrate region 146 of the substrate 102 by direct contact with the second pad 161 (see FIG. 1 ). Figure 1 ). A portion of the right positive power lead 220 is outside the molded housing 104. An opening in the molded housing 104 may be formed above the tab 221 to allow the push pin to press down on the multilayer stack (e.g., substrate 102 plus shim 161 and tab 221) during the molding process to form contact with the cavity to prevent mold flashing. After the molding process is completed, the opening may be filled with molding compound.

[0054] Output lead 212 is connected to substrate region 144 (see Figure 1 ). The output lead 212 uses a tab 212-1 (see Figure 2 ) and 212-2 are connected to substrate 102. Power module 100 may also include signal pins 236 and signal pin holders 235, only one of each is labeled for simplicity. Each signal pin 236 may include a bottom portion covered by mold housing 104, and a top portion outside mold housing 104 and above a recess formed in the mold housing.

[0055] Figure 3C FIG. 1 is an assembly diagram of a second cross-section of the assembled power module 100. The assembled power module 100 may include a molded housing 104. The DC (-) is connected to the substrate region 142 of the substrate 102 using a negative power lead 230 (see FIG. 1 ). Figure 1 ). Negative power lead 230 has a formed end 231 that is connected to substrate region 142 via direct contact with a clip such as clip 118. A portion of negative power lead 230 may be located outside the molded housing. One end of conductive clip 118 is welded to the top of power switch 110-4, and the other end of conductive clip 118 is welded to substrate region 142 of the substrate. One end of conductive clip 126 is welded to the top (source) of power switch 110-8, and the other end of conductive clip 126 is welded to substrate region 144 (see FIG. Figure 1 ).

[0056] Figure 4A FIG. 1 is an isometric view of a top portion of an assembled power module 100 according to an embodiment of the present disclosure. The power module 100 includes a recessed pin region that provides improved pin-to-pin creepage performance, as described in more detail below. Figure 4A As shown, the power module 100 includes a plurality of recesses 238 formed around the signal pins 236 (although Figure 4A Eight signal pins are shown in FIG. 1 , but only one is labeled for simplicity). Each of the plurality of recesses 238 may be formed at or define a bottom exterior surface of the power module 100 .

[0057] Figure 4B Draw Figure 4A A cross-sectional view of a portion of the power module 100 is shown in FIG. Figure 4B As shown, recess 238 is aligned with each pin area. For clarity, Figure 6BThe pins are not shown. Each recess 238 is aligned with a pin holder 235, which may be a metal structure attached to the substrate 102 via welding, soldering, gluing, or other suitable means. To form the recesses, the molding tool may include an extension that seals against the pin holder 235 so that the molding compound 104 does not flow into the pin openings 242. The pin holder 235 and recess 238 may have any suitable dimensions and may be modified to increase or decrease creepage clearance.

[0058] Figure 4C Draw as Figure 4B Similar cross-sectional views as shown, however, in Figure 4C FIG. 2 shows the pin 236 and the creepage path 244 between adjacent pins 236. Figure 4C As shown, the recess 238 significantly increases the distance of the creepage path 244 compared to a design without the recess 238 .

[0059] Figure 5A 2 is a top view assembly diagram of the power module 100 after molding and assembly. The assembly diagram shows an exposed portion of the lead frame, which includes a right positive power lead 220, a left positive power lead 240, a negative power lead 230, and an output lead 212. The top view also shows the molded housing 104 of the assembled power module 100. The molded housing 104 includes two recessed areas 252 and 254. The recessed areas 252 and 254 can be formed during the molding process and are used to seal the pin holder pores so that the mold material does not enter the pores during the molding process. After the molding process, the pins 236 can be inserted into the pin holder. Although Figure 2 Several pins 236 are shown, but only one pin is labeled for clarity.

[0060] Figure 5B 2 is a side view assembly diagram of the power module 100 after molding and assembly. The side view also shows the molded housing 104 of the assembled power module 100. The molded housing 104 may include a recessed area. After the molding process, the pins 236 may be inserted into the pin holder.

[0061] Figure 5C 1 is a top perspective assembly view of a power module 100 after molding and assembly without a recess according to an embodiment of the present disclosure. In some examples, the molded housing 104 of the power module may not include a recess. After the molding process, the signal pin may be inserted into an opening in the molded housing 104. The opening may have an area similar to the cross-sectional area of ​​the signal pin.

[0062] Figure 5D1 is a bottom view of the power module 100 after molding and assembly. The bottom view shows the exposed portion of the lead frame, which includes the right positive power lead 220, the left positive power lead 240, the negative power lead 230 and the output lead 212. The top view also shows the substrate 102 of the assembled power module 100 (see FIG. Figure 1 ) of the exposed bottom portion 256. The exposed bottom portion 256 can be placed in direct contact with a heat sink or liquid cooling enclosure (e.g., via thermal interface material, silver sintering, etc.).

[0063] Figure 5E 1 is a bottom perspective assembly view of the power module 100 after molding and assembly. The bottom perspective assembly view shows the signal pins 236 and the exposed portion of the lead frame and the substrate 102 of the power module 100 (see FIG. Figure 1 ) has an exposed bottom portion 256, the lead frame comprising a right positive power lead 220, a left positive power lead 240, a negative power lead 230, and an output lead 212.

[0064] Fig. 6A 6 is a top view of an assembly of six direct-cooled power assemblies 600. The six direct-cooled power assemblies 600 may include three assembled power modules 100 positioned side by side and each fastened to a heat sink 602. In some examples, the heat sink 602 is cooled by liquid or air. Figure 6B and Figure 6C A top perspective assembly view and a bottom perspective assembly view of six sets of direct-cooled power supply assemblies 600 are shown, respectively.

[0065] Fig. 7A 700. The components may include: a liquid cooling housing 750; a DC bus capacitor 760, which is mounted in an open portion of the liquid cooling housing 750; and a power supply assembly 600, which may be fastened to a top portion of the liquid cooling housing 750. The six-group direct cooling module 700 may also include a DC terminal bar 720 that may be attached to a portion of the capacitor 760 and a portion of the power supply assembly 600. The AC terminal bar 730 of the six-group direct cooling module 700 may be attached to a portion of the power supply assembly 600 and the liquid cooling housing 750. The control board 710 may be placed as an upper surface of the six-group direct cooling module 700. Figure 7B FIG. 4 is a perspective assembly diagram of six groups of direct cooling modules 700 after assembly.

[0066] In some embodiments, the switches and / or diodes may be fabricated from gallium nitride GaN, silicon carbide SiC, and / or silicon. In various embodiments, one or more of the switches may be field effect switches, including but not limited to enhancement mode and depletion mode switches.

[0067] Those of ordinary skill in the art will appreciate that the various features and aspects of the power module with balanced current may be changed, modified and manipulated within the scope of the present disclosure.

[0068] In the foregoing description, the embodiments of the present disclosure have been described with reference to many specific details that may vary for different embodiments. Therefore, the description and drawings should be regarded as illustrative rather than restrictive. The only and exclusive indicator of the scope of the present disclosure, and what the applicant intends to be the scope of the present disclosure, is the literal and equivalent scope of the set of claims issued by this application, in the specific form in which these claims are issued, including any subsequent corrections. The specific details of specific embodiments may be combined in any suitable manner without departing from the spirit and scope of the embodiments of the present disclosure.

[0069] In addition, spatially relative terms such as "bottom" or "top" may be used to describe the relationship of an element and / or feature to another one or more elements and / or features, for example, as illustrated in the figures. It will be understood that, in addition to the orientations depicted in the figures, spatially relative terms are intended to cover different orientations of the switch in use and / or operation. For example, if the switch in the figures is flipped, the element described as the "bottom" face may be oriented as "above" other elements or features. The switch may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0070] As used herein, the terms "and", "or", and "and / or" may include multiple meanings, which are also expected to depend at least in part on the context in which such terms are used. In general, if "or" is used to associate a list (e.g., A, B, or C), it is intended to mean A, B, and C, which are used in an inclusive sense here, and A, B, or C, which are used in an exclusive sense here. In addition, as used herein, the term "one or more" may be used to describe any feature, structure, or characteristic in the singular, or may be used to describe certain combinations of features, structures, or characteristics. However, it should be noted that this is merely an illustrative example, and the claimed subject matter is not limited to this example. In addition, if the term "at least one of" is used to associate a list (e.g., A, B, or C), it may be interpreted to mean any combination of A, B, and / or C, for example, A, B, C, AB, AC, BC, AA, AAB, ABC, AABBCCC, etc.

[0071] References throughout this specification to "one example," "an example," "some examples," or "an exemplary implementation" mean that a particular feature, structure, or characteristic described with respect to a feature and / or an example may be included in at least one feature and / or example of the claimed subject matter. Thus, the appearances of the phrases "in one example," "an example," "in some examples," or "in some implementations," or other similar phrases, in various places throughout this specification are not necessarily all referring to the same features, examples, and / or limitations. Furthermore, particular features, structures, or characteristics may be combined in one or more examples and / or features.

[0072] In the previous detailed description, numerous specific details have been set forth to provide a thorough understanding of the claimed subject matter. However, one skilled in the art will appreciate that the claimed subject matter may be practiced without these specific details. In other cases, methods and apparatus known to one skilled in the art have not been described in detail so as not to obscure the claimed subject matter. Therefore, it is intended that the claimed subject matter is not limited to the specific examples disclosed, but that such claimed subject matter may also include all aspects within the scope of the appended claims and their equivalents.

Claims

1. A power module, comprising: A substrate comprising: Electrical insulation layer; a first conductive region disposed on the electrically insulating layer; a second conductive region disposed on the electrically insulating layer and electrically isolated from the first conductive region; and a third conductive region disposed on the electrically insulating layer and electrically isolated from each of the first conductive region and the second conductive region; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region; and A power lead is coupled to the first conductive region via a pad. 2 . The power module of claim 1 , wherein the spacer comprises a conductive metal.

3. The power module of claim 1, wherein the power lead is substantially planar, and wherein the gasket is welded between the power lead and the first conductive region. The power module according to claim 1 , wherein a thickness of the gasket is greater than a thickness of the power lead.

5. The power module of claim 1, wherein the power lead is a first DC+ lead and the pad is a first pad, and wherein the power module further comprises a second DC+ lead coupled to the first conductive region via a second pad. 6 . The power module of claim 5 , further comprising a DC- lead disposed between the first DC+ lead and the second DC+ lead, the DC- lead electrically coupled to the third conductive region. 7 . The power module of claim 1 , further comprising a power output lead electrically coupled to the second conductive region. 8 . The power module of claim 1 , wherein each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.

9. An electronic module, comprising: A substrate comprising: Electrical insulation; and a conductive layer formed on the electrically insulating layer and defining a first conductive region, a second conductive region, and a third conductive region, each of which is electrically insulated from one another, wherein the second conductive region defines an opening, and wherein the third conductive region is disposed within the opening; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; and A power lead is coupled to the first conductive region via a pad.

10. The electronic module of claim 9, wherein the pad comprises a conductive metal.

11. The electronic module of claim 9, wherein the power lead is substantially planar, and wherein the gasket is soldered between the power lead and the first conductive area. 12 . The electronic module according to claim 9 , wherein a thickness of the gasket is greater than a thickness of the power lead.

13. The electronic module of claim 9, wherein the power lead is a first DC+ lead and the pad is a first pad, and wherein the electronic module further comprises a second DC+ lead coupled to the first conductive region via a second pad. 14 . The electronic module of claim 13 , further comprising a DC- lead disposed between the first DC+ lead and the second DC+ lead, the DC- lead electrically coupled to the third conductive region.

15. The electronic module of claim 9, further comprising a power output lead electrically coupled to the second conductive region. 16 . The electronic module of claim 9 , wherein each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor. 17 . The electronic module of claim 9 , wherein each of the plurality of high-side power switches is connected to each of the plurality of low-side power switches in a half-bridge configuration.

18. A method of forming an electronic module, the method comprising: forming an insulating layer of a substrate; forming a first conductive region, a second conductive region, and a third conductive region on a top surface of the substrate, wherein each of the first conductive region, the second conductive region, and the third conductive region are each electrically insulated from one another, wherein the second conductive region defines an opening, and wherein the third conductive region is disposed within the opening; attaching a plurality of high-side power switches to the first conductive region; electrically coupling a plurality of first connectors between the plurality of high-side power switches and the second conductive region; electrically coupling a plurality of low-side power switches to the second conductive region; electrically coupling a plurality of second connectors between the plurality of low-side power switches and the third conductive region; and A power lead is electrically coupled to the first conductive region via a pad. The method of claim 18 , wherein the spacer comprises a conductive metal.

20. The method of claim 18, wherein the thickness of the gasket is greater than the thickness of the power lead.

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