Power module and manufacturing method thereof

Abstract

The invention relates to the technical field of electronic circuits, and discloses a power module and a manufacturing method thereof. The power module comprises a first conductor layer, a second conductor layer, a third conductor layer, a first power chip and a second power chip, a first welding area, a second welding area, a third welding area and a fourth welding area are formed on the first conductor layer; the second conductor layer and the third conductor layer are stacked with the first conductor layer and are isolated from the first conductor layer; a collector electrode of the first power chip is welded to the first welding area, a grid electrode of the first power chip is electrically connected with the second welding area, and an emitting electrode of the first power chip is electrically connected with the second conductor layer and the third welding area. A collector electrode of the second power chip is welded to the third welding area, a grid electrode of the second power chip is electrically connected with the fourth welding area, and an emitting electrode of the second power chip is electrically connected with the third conductor layer. According to the embodiment of the invention, the stray inductance of the power module can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and in particular to a power module and a manufacturing method thereof. Background Art

[0002] Power modules are important semiconductor devices that control the working state of circuits and realize circuit protection and inverter functions. They are widely used in automobiles, electrical appliances, industrial equipment and other fields.

[0003] In the related art, the power chip, chip connector and temperature sensor in the power module are usually arranged on a single-layer substrate, which cannot realize a low stray inductance loop, resulting in a large stray inductance. Summary of the invention

[0004] The purpose of the present application is to provide a power module and a manufacturing method thereof, which can reduce the stray inductance of the power module by adopting a multi-layer substrate design.

[0005] The present application provides a power module, including: A first conductor layer is formed with a first welding area, a second welding area, a third welding area and a fourth welding area; a second conductor layer, stacked with the first conductor layer and isolated from the first conductor layer; a third conductor layer, stacked with the first conductor layer and isolated from the first conductor layer; A first power chip, whose collector is welded to the first welding area, whose gate is electrically connected to the second welding area, and whose emitter is electrically connected to the second conductor layer and the third welding area; The collector of the second power chip is welded to the third welding area, the gate of the second power chip is electrically connected to the fourth welding area, and the emitter of the second power chip is electrically connected to the third conductor layer.

[0006] In some embodiments, the first welding area, the second welding area, the third welding area and the fourth welding area are arranged in sequence at intervals, the second conductor layer is arranged around the outer edges of the first welding area and the second welding area, and the third conductor layer is arranged on a side of the fourth welding area away from the third welding area.

[0007] In some embodiments, an insulating layer is disposed between the first conductor layer and the second conductor layer and between the first conductor layer and the third conductor layer.

[0008] In some embodiments, the power module further includes a thermistor, the first conductor layer further includes a fifth welding area, and the thermistor is welded to the fifth welding area.

[0009] In some embodiments, the power module further comprises a wiring frame, wherein the wiring frame is configured with: a first terminal electrically connected to the first welding area; a second terminal electrically connected to the second welding area; A third connecting terminal, electrically connected to the third welding area; A plurality of signal terminals are electrically connected to the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer respectively.

[0010] In some embodiments, the wiring frame is arranged around the outer edges of the first conductor layer, the second conductor layer and the third conductor layer, and the inner cavity of the wiring frame accommodating the first power chip and the second power chip is filled with a sealant layer and closed by a cover.

[0011] In some embodiments, the second conductor layer is stacked on the third conductor layer and isolated from the third conductor layer, or the third conductor layer is stacked on the second conductor layer and isolated from the second conductor layer.

[0012] In some embodiments, the second conductor layer is stacked on a first side of the first conductor layer, and the third conductor layer is stacked on a second side of the first conductor layer.

[0013] The present application also provides a method for manufacturing a power module, which is applied to manufacturing the above-mentioned power module. The method for manufacturing the power module includes: Laminating the first conductor layer, the second conductor layer and the third conductor layer on a substrate through a lamination process, so that the second conductor layer and the third conductor layer are respectively stacked with the first conductor layer and isolated from the first conductor layer; The collector of the first power chip is welded to the first welding area, the collector of the second power chip is welded to the third welding area, the gate of the first power chip is electrically connected to the second welding area and the gate of the second power chip is electrically connected to the fourth welding area using a binding wire, and the emitter of the first power chip is electrically connected to the second conductor layer and the third welding area and the emitter of the first power chip is electrically connected to the third conductor layer using a welding sheet.

[0014] In some embodiments, the method for manufacturing the power module further includes: Bonding a wiring frame to the substrate so that the wiring frame surrounds the outer edges of the first conductor layer, the second conductor layer and the third conductor layer; Installing a first wiring terminal, a second wiring terminal and a third wiring terminal in the wiring frame, so that the first wiring terminal is electrically connected to the first welding area, the second wiring terminal is electrically connected to the second welding area, and the third wiring terminal is electrically connected to the third welding area, and using binding wires to electrically connect multiple signal terminals of the wiring frame to the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer respectively; A sealing layer is poured into the inner cavity of the wiring frame accommodating the first power chip and the second power chip, and is sealed by a cover.

[0015] The beneficial effects of the present application are as follows: a first power chip and a second power chip are arranged by utilizing a stacked structure of a first conductor layer and a second conductor layer and a third conductor layer stacked on the first conductor layer and isolated from the first conductor layer; since the first conductor layer and the second conductor layer and the third conductor layer stacked on the first conductor layer and isolated from the first conductor layer are formed, and the first conductor layer forms a first welding area, a second welding area, a third welding area and a fourth welding area, the DC positive and negative circuits are overlapped, the loop is reduced, and thus the stray inductance is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a planar structural diagram of the power module provided in the first embodiment of the present application.

[0017] Figure 2 It is a three-dimensional structural diagram of the first conductor layer provided in one embodiment of the present application.

[0018] Figure 3 It is an exploded structural diagram of a component obtained by assembling a first conductor layer, a second conductor layer and a third conductor layer provided in an embodiment of the present application.

[0019] Figure 4 It is a planar structural diagram of a power module provided in the second embodiment of the present application.

[0020] Figure 5 It is an exploded structural diagram of a power module provided in the third embodiment of the present application.

[0021] Figure 6 It is a flow chart of a method for manufacturing a power module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0023] It should be noted that, although the functional modules are divided in the device schematic diagram and the logical order is shown in the flowchart, in some cases, the steps shown can be performed in a different order than the module division in the device or the order in the flowchart. The terms "first", "second" and the like in the specification, claims and drawings are used to distinguish similar objects, and are not used to describe a specific order or sequence.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0025] Combined with reference Figure 1 to Figure 2 A power module provided in an embodiment of the present application includes a first conductor layer 100 , a second conductor layer 200 , a third conductor layer 300 , a first power chip 400 and a second power chip 500 .

[0026] The first conductor layer 100 is formed with a first welding area 110 , a second welding area 120 , a third welding area 130 and a fourth welding area 140 , the second conductor layer 200 is stacked and isolated from the first conductor layer 100 , and the third conductor layer 300 is stacked and isolated from the first conductor layer 100 . Specifically, the first conductor layer 100 may be formed by an etching process to form a first welding area 110, a second welding area 120, a third welding area 130 and a fourth welding area 140, and the first welding area 110, the second welding area 120, the third welding area 130 and the fourth welding area 140 are insulated and isolated from each other. The second conductor layer 200 and the third conductor layer 300 may be stacked on the first conductor layer 100 by a pressing process or a bonding process, and corresponding insulating materials may be provided between the second conductor layer 200 and the first conductor layer 100 and between the third conductor layer 300 and the first conductor layer 100, respectively, so that the second conductor layer 200 and the first conductor layer 100 are isolated from each other, and the third conductor layer 300 and the first conductor layer 100 are isolated from each other.

[0027] The collector of the first power chip 400 is welded to the first welding area 110, the gate of the first power chip 400 is electrically connected to the second welding area 120, the emitter of the first power chip 400 is electrically connected to the second conductor layer 200 and the third welding area 130, the collector of the second power chip 500 is welded to the third welding area 130, the gate of the second power chip 500 is electrically connected to the fourth welding area 140, and the emitter of the second power chip 500 is electrically connected to the third conductor layer 300. Specifically, the first power chip 400 and the second power chip 500 are both IGBT devices. The first power chip 400 serves as the upper tube of the power module, and the second power chip 500 serves as the lower tube of the power module. The gate of the first power chip 400 is electrically connected to the second welding area 120 through a binding wire, and the gate of the second power chip 500 is electrically connected to the fourth welding area 140 through a binding wire. The emitter of the first power chip 400 is electrically connected to the second conductor layer 200 and the third welding area 130 through a welding piece, and the emitter of the second power chip 500 is electrically connected to the third conductor layer 300 through a welding piece. Since the emitter of the first power chip 400 is electrically connected to the third welding area 130 and the collector of the second power chip 500 is welded to the third welding area 130, the emitter of the first power chip 400 is electrically connected to the collector of the second power chip 500.

[0028] In actual application, corresponding leads are led out from the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200 and the third conductor layer 300 and connected to corresponding interfaces in the external circuit, so that the first power chip 400 and the second power chip 500 are respectively connected to the external circuit, and the energy of the input power supply can be converted into the required output form, such as direct current to alternating current (DC-AC), alternating current to direct current (AC-DC), low voltage to high voltage (LV-HV) or high voltage to low voltage (HV-LV), etc.

[0029] The power module provided in the embodiment of the present application is configured with a first conductor layer 100 and a second conductor layer 200 and a third conductor layer 300 stacked on the first conductor layer 100 and isolated from the first conductor layer 100, and the first conductor layer 100 forms a first welding area 110, a second welding area 120, a third welding area 130 and a fourth welding area 140, so that the pin connection path of the first power chip 400 as the upper tube and the second power chip 500 as the lower tube can be shortened, thereby reducing the stray inductance of the power module. Compared with a power module with a single-layer layout, the volume of the power module is reduced.

[0030] See again Figure 1 to Figure 2In some embodiments, the first welding area 110, the second welding area 120, the third welding area 130 and the fourth welding area 140 are arranged in sequence, the second conductor layer 200 is arranged around the outer edges of the first welding area 110 and the second welding area 120, and the third conductor layer 300 is arranged on the side of the fourth welding area 140 away from the third welding area 130. Specifically, by performing an etching process on the first conductor layer 100, the first welding area 110, the second welding area 120, the third welding area 130 and the fourth welding area 140 are respectively formed along the length direction of the first conductor layer 100, wherein the first welding area 110 is one of the areas in the body of the first conductor layer 100, the second welding area 120, the third welding area 130 and the fourth welding area 140 are formed by performing an etching process on the first conductor layer 100, the first welding area 110 is coated on the outer edge of the second welding area 120, the third welding area 130 The second conductor layer 200 is covered with the outer edge of the fourth welding area 140, and a layer hole is opened in the second conductor layer 200. The second conductor layer 200 is arranged around the outer edges of the first welding area 110 and the second welding area 120, so that the first welding area 110 and the second welding area 120 are within the range of the layer hole, and the third conductor layer 300 is arranged on the side of the fourth welding area 140 away from the third welding area 130, that is, the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140 and the third conductor layer 300 are arranged in sequence and spaced in the length direction of the first conductor layer 100. In this way, the layout between the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200 and the third conductor layer 300 can be made more compact, and the pin connection path between the first power chip 400 and the second power chip 500 can be further shortened, thereby further reducing the stray inductance of the power module.

[0031] See also Figure 3In some embodiments, an insulating layer 600 is provided between the first conductor layer 100 and the second conductor layer 200 and between the first conductor layer 100 and the third conductor layer 300. Specifically, the insulating layer 600 between the first conductor layer 100 and the second conductor layer 200 has substantially the same shape as the second conductor layer 200, and the insulating layer 600 between the first conductor layer 100 and the third conductor layer 300 has substantially the same shape as the third conductor layer 300. Before the second conductor layer 200 and the third conductor layer 300 are pressed onto the first conductor layer 100, the corresponding insulating layer 600 is first pressed onto the first conductor layer 100, and then the second conductor layer 200 and the third conductor layer 300 are pressed onto the first conductor layer 100 at the position of the insulating layer 600, so that the second conductor layer 200 and the third conductor layer 300 are insulated and isolated from each other from the first conductor layer 100. Thus, the first conductor layer 100 can have good insulation performance from the second conductor layer 200 and the third conductor layer 300. Preferably, the insulating layer 600 may be an insulating film with a thickness of 120-150 um (thermal conductivity of 10-14 W / mK), made of boron nitride or aluminum nitride.

[0032] See again Figure 1 to Figure 2 In some embodiments, the power module further includes a thermistor 700, and the first conductor layer 100 further forms a fifth welding area 150, and the thermistor 700 is welded to the fifth welding area 150. Specifically, the fifth welding area 150 is formed by an etching process at a position close to the first welding area 110 or the third welding area 130 and is insulated and isolated from the first welding area 110, the second welding area 120, the third welding area 130 and the fourth welding area 140, respectively. The fifth welding area 150 includes two pads spaced apart from each other, which are respectively connected to the two ends of the thermistor 700. In actual application, the corresponding lead wire is led out for the fifth welding area 150 and connected to the corresponding interface in the external circuit, and the external circuit can monitor the resistance value of the thermistor 700 to determine the temperature of the power module. In this way, the temperature of the power module can be accurately detected to achieve over-temperature protection.

[0033] Combined with reference Figures 4 to 5In some embodiments, the power module further includes a wiring frame 800, and the wiring frame 800 is configured with a first wiring terminal 810, a second wiring terminal 820, a third wiring terminal 830, and a plurality of signal terminals 840. The first wiring terminal 810 is electrically connected to the first welding area 110, the second wiring terminal 820 is electrically connected to the second welding area 120, the third wiring terminal 830 is electrically connected to the third welding area 130, and each signal terminal 840 is electrically connected to the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200, and the third conductor layer 300, respectively. Specifically, the wiring frame 800 is made of an insulating material, and a plurality of signal terminals 840 are arranged on the wiring frame 800 and corresponding positions are reserved for installing the first terminal 810, the second terminal 820 and the third terminal 830. Each signal terminal 840 is electrically connected to the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200 and the third conductor layer 300 through a binding wire, that is, one signal terminal 840 is connected to one of the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200 and the third conductor layer 300, and the first terminal 810, the second terminal 820 and the third terminal 830 are respectively welded to the first welding area 110, the second welding area 120 and the third welding area 130. In actual application, the signal terminal 840 electrically connects the first welding area 110, the second welding area 120, the third welding area 130, the fourth welding area 140, the second conductor layer 200 and the third conductor layer 300 to the signal transmission part of the external circuit, the first terminal 810, the second terminal 820 and the third terminal 830 respectively electrically connect the first welding area 110, the second welding area 120 and the third welding area 130 to the energy conversion part of the external circuit, and the signal transmission part of the external circuit outputs a corresponding level signal to the signal terminal 840 electrically connected to the second welding area 120 and the signal terminal 840 electrically connected to the fourth welding area 140, so that the first power chip 400 and the second power chip 400 are connected. The chip 500 is powered on, and after the first power chip 400 and the second power chip 500 are powered on, the energy conversion part of the external circuit is electrically connected through the first terminal 810, the second terminal 820 and the third terminal 830 to make the energy conversion part of the external circuit powered on, and the signal transmission part of the external circuit monitors the working conditions of the first power chip 400 and the second power chip 500 by detecting the level signal of the signal terminal 840 electrically connected to the first welding area 110, the signal terminal 840 electrically connected to the third welding area 130, the signal terminal 840 electrically connected to the second conductor layer 200 and the signal terminal 840 electrically connected to the third conductor layer 300. In this way, the power module can be easily connected to the external circuit, and the wiring difficulty is reduced.

[0034] Furthermore, in some embodiments, the wiring frame 800 is arranged around the outer edges of the first conductor layer 100, the second conductor layer 200 and the third conductor layer 300, and the inner cavity of the wiring frame 800 accommodating the first power chip 400 and the first power chip 400 is filled with a sealant layer 900 and is closed by a cover 1000. Specifically, the wiring frame 800 serves as the outer frame of the first conductor layer 100, the second conductor layer 200 and the third conductor layer 300, and covers the first conductor layer 100, the second conductor layer 200 and the third conductor layer 300, and then the sealant layer 900 is filled in the inner cavity of the wiring frame 800 accommodating the first power chip 400 and the first power chip 400 and is closed by a cover 1000 after the filling, so that the first power chip 400 and the first power chip 400 can be in a sealed environment, with good protection performance.

[0035] In some embodiments, the second conductor layer 200 is stacked on the third conductor layer 300 and isolated from the third conductor layer 300 , or the third conductor layer 300 is stacked on the second conductor layer 200 and isolated from the second conductor layer 200 .

[0036] In some embodiments, the second conductor layer 200 is stacked on a first side of the first conductor layer 100 , and the third conductor layer 300 is stacked on a second side of the first conductor layer 100 .

[0037] See also Figure 6 The present application also provides a method for manufacturing a power module, which is applied to manufacture the power module as described above. The method for manufacturing the power module includes: Step S100 , laminating the first conductor layer, the second conductor layer and the third conductor layer on a substrate through a lamination process, so that the second conductor layer and the third conductor layer are respectively stacked with the first conductor layer and isolated from the first conductor layer.

[0038] In a specific implementation, an insulating layer whose length and width dimensions match those of the first conductor layer is covered on the substrate (for example, an insulating layer with a thickness of 120-150um, a thermal conductivity of 10-14W / mK, and a material of boron nitride or aluminum nitride), and then the first conductor layer is placed on the side of the insulating layer away from the substrate, and the insulating layer and the first conductor layer are pressed onto the substrate through a pressing process, and then the first conductor layer is etched to form a first welding area, a second welding area, a third welding area and a fourth welding area on the first conductor layer (the first conductor layer can be a first welding area, a second welding area, a third welding area and a fourth welding area formed in advance), and then the corresponding insulating layer and the second conductor layer and the third conductor layer are placed on the first conductor layer, and the insulating layer, the second conductor layer and the third conductor layer are pressed onto the first conductor layer through a pressing process, so that the second conductor layer and the third conductor layer are respectively stacked with the first conductor layer and isolated from the first conductor layer. The substrate is a copper plate or an aluminum plate (3 mm thick, 500 mm×400 mm in length and width), the first conductor layer, the second conductor layer and the third conductor layer are copper layers (0.5 mm-0.6 mm thick), and the process requirements of the pressing process are pressure>10 MPa, vacuuming, furnace temperature 200°C and placement for 3 hours. In some embodiments, when etching the first conductor layer, the fifth welding area can also be etched in the first conductor layer, or the first conductor layer can pre-form the fifth welding area.

[0039] Step S200, weld the collector of the first power chip to the first welding area, weld the collector of the second power chip to the third welding area, use binding wires to electrically connect the gate of the first power chip to the second welding area and the gate of the second power chip to the fourth welding area, use welding sheets to electrically connect the emitter of the first power chip to the second conductor layer and the third welding area and the emitter of the first power chip to the third conductor layer.

[0040] In a specific implementation, the collector of the first power chip and the collector of the second power chip are respectively mounted on the first welding area and the third welding area by a chip mounter, the preformed welding sheet is mounted on the emitter of the first power chip and the emitter of the second power chip, the bonding wire is mounted on the gate of the first power chip and the gate of the second power chip, and then welding is performed by a welding machine, so that the gate of the first power chip is electrically connected to the first welding area, the gate of the second power chip is electrically connected to the third welding area, the emitter of the first power chip is electrically connected to the second conductor layer and the third welding area through the welding sheet, the emitter of the first power chip is electrically connected to the third conductor layer through the welding sheet, the gate of the first power chip is electrically connected to the second welding area through the bonding wire, and the gate of the second power chip is electrically connected to the fourth welding area through the bonding wire. In some embodiments, when mounting by a chip mounter, the thermistor can also be mounted on the fifth welding area, and after welding by a welding machine, the thermistor is electrically connected to the fifth welding area.

[0041] In some embodiments, the manufacturing method of the power module also includes: bonding the wiring frame to the substrate so that the wiring frame is arranged around the outer edges of the first conductor layer, the second conductor layer and the third conductor layer; installing the first wiring terminal, the second wiring terminal and the third wiring terminal in the wiring frame, so that the first wiring terminal is electrically connected to the first welding area, the second wiring terminal is electrically connected to the second welding area, and the third wiring terminal is electrically connected to the third welding area, and using binding wires to electrically connect multiple signal terminals of the wiring frame to the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer respectively; pouring a sealant layer in the inner cavity of the wiring frame that accommodates both the first power chip and the second power chip, and sealing it with a cover.

[0042] In a specific implementation, adhesive is applied to the contact surface between the substrate and the wiring frame by a glue dispenser, the wiring frame is installed to the substrate by a tooling, and is placed in a high-temperature box for curing after installation, and the first terminal, the second terminal and the third terminal are respectively placed on the corresponding installation positions of the wiring frame, and the first terminal, the second terminal and the third terminal are pressed toward the substrate by a tooling, and the first terminal, the second terminal and the third terminal are respectively welded to the first conductor layer, the second conductor layer and the third conductor layer by a laser, and the binding wires are connected to each signal terminal and the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer by a binding machine, and sealant is poured into the inner cavity of the wiring frame accommodating the first power chip and the first power chip by a glue pouring machine, and is cured under the action of a catalyst to obtain a sealant layer, and finally a cover is placed on the surface of the sealant layer. Among them, the process requirements of the curing process are that the curing temperature is 80°C, the curing time is 30 minutes, the output laser of the laser is 800W-1000W continuous laser, the length of the binding line is 300mm, the model of the sealant is WACKER SilGel 612 A / B, and A glue and B glue are mixed in a mixing ratio of 1:1.

[0043] In summary, the power module and the manufacturing method thereof provided in the embodiments of the present application utilize a stacked structure of a first conductor layer and a second conductor layer and a third conductor layer stacked on the first conductor layer and isolated from the first conductor layer to arrange a first power chip and a second power chip. Since the first conductor layer and the second conductor layer and the third conductor layer stacked on the first conductor layer and isolated from the first conductor layer are formed, and the first conductor layer forms a first welding area, a second welding area, a third welding area and a fourth welding area, the DC positive and negative circuits are overlapped, the loop is reduced, and the stray inductance is reduced.

[0044] It should be understood that in the present application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0045] The preferred embodiments of the present invention are described above with reference to the accompanying drawings, but the scope of the rights of the present invention is not limited thereto. Any modification, equivalent substitution and improvement made by a person skilled in the art without departing from the scope and essence of the present invention should be within the scope of the rights of the present invention.

Claims

1. A power module, characterized in that: include: A first conductor layer is formed with a first welding area, a second welding area, a third welding area and a fourth welding area; a second conductor layer, stacked with the first conductor layer and isolated from the first conductor layer; a third conductor layer, stacked with the first conductor layer and isolated from the first conductor layer; A first power chip, whose collector is welded to the first welding area, whose gate is electrically connected to the second welding area, and whose emitter is electrically connected to the second conductor layer and the third welding area; The collector of the second power chip is welded to the third welding area, the gate of the second power chip is electrically connected to the fourth welding area, and the emitter of the second power chip is electrically connected to the third conductor layer.

2. The power module according to claim 1, characterized in that: The first welding area, the second welding area, the third welding area and the fourth welding area are arranged in sequence at intervals, the second conductor layer is arranged around the outer edges of the first welding area and the second welding area, and the third conductor layer is arranged on a side of the fourth welding area away from the third welding area.

3. The power module according to claim 1, characterized in that: An insulating layer is provided between the first conductor layer and the second conductor layer and between the first conductor layer and the third conductor layer.

4. The power module according to claim 1, characterized in that: The power module further includes a thermistor. The first conductor layer further includes a fifth welding area, and the thermistor is welded to the fifth welding area.

5. The power module according to claim 1, characterized in that: The power module further comprises a wiring frame, wherein the wiring frame is configured with: a first terminal electrically connected to the first welding area; a second terminal electrically connected to the second welding area; A third connecting terminal, electrically connected to the third welding area; A plurality of signal terminals are electrically connected to the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer respectively.

6. The power module according to claim 5, characterized in that: The wiring frame is arranged around the outer edges of the first conductor layer, the second conductor layer and the third conductor layer. The inner cavity of the wiring frame accommodating the first power chip and the second power chip is filled with a sealing layer and is closed by a cover.

7. The power module according to any one of claims 1 to 6, characterized in that: The second conductor layer is stacked on the third conductor layer and isolated from the third conductor layer, or the third conductor layer is stacked on the second conductor layer and isolated from the second conductor layer.

8. The power module according to any one of claims 1 to 6, characterized in that: The second conductor layer is stacked on a first side of the first conductor layer, and the third conductor layer is stacked on a second side of the first conductor layer.

9. A method for manufacturing a power module, characterized in that: Applicable to manufacturing a power module according to any one of claims 1 to 8, the manufacturing method of the power module comprising: Laminating the first conductor layer, the second conductor layer and the third conductor layer on a substrate through a lamination process, so that the second conductor layer and the third conductor layer are respectively stacked with the first conductor layer and isolated from the first conductor layer; The collector of the first power chip is welded to the first welding area, the collector of the second power chip is welded to the third welding area, the gate of the first power chip is electrically connected to the second welding area and the gate of the second power chip is electrically connected to the fourth welding area using a binding wire, and the emitter of the first power chip is electrically connected to the second conductor layer and the third welding area and the emitter of the first power chip is electrically connected to the third conductor layer using a welding sheet.

10. The method for manufacturing a power module according to claim 9, characterized in that: Also includes: Bonding a wiring frame to the substrate so that the wiring frame surrounds the outer edges of the first conductor layer, the second conductor layer and the third conductor layer; Installing a first wiring terminal, a second wiring terminal and a third wiring terminal in the wiring frame, so that the first wiring terminal is electrically connected to the first welding area, the second wiring terminal is electrically connected to the second welding area, and the third wiring terminal is electrically connected to the third welding area, and using binding wires to electrically connect multiple signal terminals of the wiring frame to the first welding area, the second welding area, the third welding area, the fourth welding area, the second conductor layer and the third conductor layer respectively; A sealing layer is poured into the inner cavity of the wiring frame accommodating the first power chip and the second power chip, and is sealed by a cover.

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