Low-noise amplifier, radio frequency chip and radio frequency front-end module

Abstract

The invention discloses a low-noise amplifier, a radio frequency signal comprising the low-noise amplifier and a radio frequency front-end module. The low-noise amplifier comprises a first signal input end, a second signal input end, a first amplification unit and a second amplification unit, the first signal input end is connected to the input end of the first amplification unit, and the first signal input end and the first amplification unit are arranged in a first area; the second signal input end is connected to the input end of the second amplification unit, and the second signal input end and the second amplification unit are arranged in a second area; wherein a first shielding electrode is arranged between the first area and the second area. In the embodiment of the invention, different radio-frequency signal paths are isolated by arranging the first shielding electrode, so that on one hand, the leakage of radio-frequency signals in the input and amplification process is reduced, and the insertion loss of the low-noise amplifier is reduced; on the other hand, mutual interference of different radio-frequency signals in the input and amplification process is avoided, and therefore the noise coefficient of the low-noise amplifier is improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a low noise amplifier, a radio frequency chip and a radio frequency front-end module. Background Art

[0002] With the continuous development of wireless communication technology, mobile communication equipment needs to support multi-band operation to meet the needs of different application scenarios.

[0003] As a key component of the RF front-end circuit, the low-noise amplifier usually needs to support multiple frequency bands at the same time to amplify weak signals in different frequency ranges. However, in the existing technology, there is a problem of mutual interference between signals in different frequency bands, which will reduce the performance of the low-noise amplifier. Summary of the invention

[0004] The present application proposes a low noise amplifier and a radio frequency signal and a radio frequency front-end module including the low noise amplifier, which can reduce mutual interference between radio frequency signals in different frequency bands and improve the performance of the low noise amplifier.

[0005] In a first aspect, an embodiment of the present application provides a low noise amplifier, which is integrated in a chip and includes a first signal input terminal, a second signal input terminal, a first amplification unit, and a second amplification unit, wherein the first signal input terminal and the second signal input terminal are used to input radio frequency signals of different frequency bands; The first signal input terminal is connected to the input terminal of the first amplifying unit, and is arranged in a first area with the first amplifying unit, and the first area is adjacent to a first edge of the chip; The second signal input terminal is connected to the input terminal of the second amplifying unit, and is arranged in a second area with the second amplifying unit, and the second area is adjacent to a second edge of the chip; Wherein, a first shielding electrode is arranged between the first area and the second area.

[0006] According to the embodiment of the present application, by setting the first shielding electrode 151 between the first area Z1 and the second area Z2, different RF signals respectively input by the first signal input terminal 111 and the second signal input terminal 112 are isolated, and different RF signals respectively amplified by the first amplifying unit 131 and the second amplifying unit 132 are isolated. On the one hand, the leakage of the RF signal during the input and amplification process is reduced, and the insertion loss of the low-noise amplifier 100 is reduced; on the other hand, different RF signals are prevented from interfering with each other during the input and amplification process, thereby preventing the noise coefficient of the low-noise amplifier 100 from deteriorating, thereby improving the noise coefficient of the low-noise amplifier 100; therefore, the embodiment of the present application can improve the performance of the low-noise amplifier 100 from many aspects.

[0007] In a second aspect, an embodiment of the present application provides a low noise amplifier, which is integrated in a chip and includes a second amplification unit, a third amplification unit, a first switch, a second switch, and a second signal output terminal, wherein the first amplification unit and the second amplification unit are used to amplify radio frequency signals of different frequency bands; The output end of the second amplifying unit is connected to the second signal output end through the first switch, and the output end of the third amplifying unit is connected to the second signal output end through the second switch; Wherein, the connection line between the first switch and the second signal output terminal includes a first metal wiring, and the connection line between the second switch and the second signal output terminal includes a second metal wiring; The second metal routing is not completely parallel to the first metal routing; and / or, the projections of the second metal routing and the first metal routing in a specific direction do not completely overlap, and the specific direction is a direction parallel to any edge of the chip.

[0008] According to an embodiment of the present application, by setting the second metal routing 162 to be not completely parallel to the first metal routing 161 or to be staggered, the coupling between the first metal routing 161 and the second metal routing 162 can be weakened to reduce the leakage of the RF signal between the first metal routing 161 and the second metal routing 162, thereby improving the performance of the low noise amplifier 100.

[0009] In a third aspect, an embodiment of the present application provides a radio frequency chip, comprising a low noise amplifier as provided in the first aspect or the second aspect.

[0010] In a fourth aspect, an embodiment of the present application provides a radio frequency front-end module, including a low noise amplifier as provided in the first aspect or the second aspect; or including a radio frequency chip as provided in the third aspect.

[0011] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0013] Figure 1a and Figure 1b The schematic diagrams of the structures of a low noise amplifier provided in the embodiments of the present application are respectively shown.

[0014] Figure 2a and Figure 2b The schematic diagrams of the structures of another low noise amplifier provided in the embodiments of the present application are respectively shown.

[0015] Figure 3 A schematic diagram of the structure of another low noise amplifier provided in an embodiment of the present application is shown.

[0016] Figure 4a and Figure 4b The schematic diagrams respectively show the structure of another low noise amplifier provided in the embodiments of the present application.

[0017] Figure 5 A circuit diagram of a low noise amplifier provided in an embodiment of the present application is shown.

[0018] Figure 6 A schematic diagram of the structure of another low noise amplifier provided in an embodiment of the present application is shown.

[0019] Figure 7 A schematic diagram of the structure of another low noise amplifier provided in an embodiment of the present application is shown.

[0020] Figure 8 Shows Figure 7 Schematic diagram of the structure of the fifth area.

[0021] Figure 9a and Figure 9b The schematic diagrams respectively show the structure of another low noise amplifier provided in the embodiments of the present application.

[0022] Fig.10a and Fig.10b The circuit diagrams of another low noise amplifier provided in the embodiments of the present application are respectively shown.

[0023] Fig.11a and Fig.11b The circuit diagrams of another low noise amplifier provided in the embodiments of the present application are respectively shown.

[0024] Fig.12 A circuit diagram of another low noise amplifier provided in an embodiment of the present application is shown.

[0025] Fig.13 A schematic diagram of the structure of another low noise amplifier provided in an embodiment of the present application is shown.

[0026] Fig.14 A schematic structural diagram of a radio frequency front-end module provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0028] The terms "first", "second", etc. in this application are used to distinguish different objects, rather than to describe a specific order. The term "plurality" refers to two or more. The term "and / or" refers to at least one of the multiple objects listed. For example, "A and / or B" can be any of the following three situations: including A but not B, including B but not A, and including both A and B.

[0029] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] The present application provides a low noise amplifier 100 integrated in a chip 10. Figure 1a and Figure 1b The low noise amplifier 100 includes a first signal input terminal 111, a second signal input terminal 112, a first amplifying unit 131, and a second amplifying unit 132. The first signal input terminal 111 is connected to the input terminal of the first amplifying unit, and is arranged in a first area Z1 with the first amplifying unit, and the first area Z1 is adjacent to the first edge of the chip 10; the second signal input terminal 112 is connected to the input terminal of the second amplifying unit 132, and is arranged in a second area Z2 with the second amplifying unit 132, and the second area Z2 is adjacent to the second edge of the chip.

[0032] As an implementation method, Figure 1aAs shown, the first edge and the second edge of the chip can be two opposite edges, so that the first signal input terminal 111 and the second signal input terminal 112 are respectively arranged adjacent to the two opposite edges of the chip, thereby increasing the distance between the first signal input terminal 111 and the second signal input terminal 112, thereby reducing the leakage of the RF signal between the first signal input terminal 111 and the second signal input terminal 112, and improving the isolation between different signal paths in the low noise amplifier 100.

[0033] It should be noted that the first area Z1 is adjacent to the first edge of the chip, which may mean that no other circuit elements are arranged between the periphery of the first area Z1 and the first edge. For example, except for the necessary metal routing, vias or shielding patterns, no circuit elements such as transistors and capacitors are arranged between the periphery of the first area Z1 and the first edge.

[0034] Alternatively, the first area Z1 is adjacent to the first edge of the chip, which may mean that the minimum distance between the first area Z1 and the first edge is less than a preset distance threshold. For example, the minimum distance between the first area Z1 and the first edge is less than 1 / 10 of the length of any side of the chip layout, and the first area Z1 is considered to be set adjacent to the first edge.

[0035] The second area Z2 is adjacent to the second edge of the chip, and other areas appearing later are adjacent to other edges of the chip, and their meanings are similar to this and will not be described in detail later.

[0036] As another embodiment, Figure 1b As shown, the first edge and the second edge of the chip may also be two adjacent edges, which can facilitate the layout of other circuit elements in the chip.

[0037] A first shielding electrode 151 is disposed between the first region and the second region. The first shielding electrode 151 may be a patterned metal film or metal trace, and the first shielding electrode 151 may be grounded, so that the radio frequency signal leaked from the first amplifying unit 131 or the second amplifying unit 132 to the shielding electrode 151 is transmitted to the ground to avoid interference with the other amplifying unit.

[0038] Specifically, the chip 10 includes a substrate and a plurality of wiring layers prepared on the substrate, wherein the first shielding electrode 151 can be formed in one or more wiring layers of the chip 10, and a projection of the first shielding electrode 151 on the substrate is at least partially located between the first region Z1 and the second region Z2.

[0039] In the embodiment of the present application, a first shielding electrode 151 is provided between the first region Z1 and the second region Z2, thereby isolating different RF signals respectively inputted by the first signal input terminal 111 and the second signal input terminal 112, and isolating different RF signals respectively amplified by the first amplifying unit 131 and the second amplifying unit 132. On the one hand, the leakage of RF signals during the input and amplification process is reduced, thereby reducing the insertion loss of the low-noise amplifier 100; on the other hand, it is avoided that different RF signals interfere with each other during the input and amplification process, thereby preventing the noise coefficient of the low-noise amplifier 100 from deteriorating, thereby improving the noise coefficient of the low-noise amplifier 100; therefore, the embodiment of the present application can improve the performance of the low-noise amplifier 100 in many aspects.

[0040] As an implementation mode, the first signal input terminal 111 and the second signal input terminal 112 are used to input radio frequency signals of different frequency bands, and accordingly, the first amplifying unit 131 and the second amplifying unit 132 are used to amplify radio frequency signals of different frequency bands. For example, the first amplifying unit 131 is used to amplify radio frequency signals of the first frequency band, and the second amplifying unit 132 is used to amplify radio frequency signals of the second frequency band, wherein the frequency range of the first frequency band does not completely overlap with the frequency range of the second frequency band. For example, the first frequency band may be a low frequency band, and the second frequency band may be a mid-frequency band or a high frequency band (hereinafter referred to as "mid-high frequency band"). By amplifying radio frequency signals of different frequency bands by different amplifying units, the isolation between signal paths of different frequency bands can be improved.

[0041] It can be understood that the low frequency band, the medium frequency band and the high frequency band are collectively referred to as multiple communication frequency bands within a specific frequency range. The low frequency band, the medium frequency band and the high frequency band can respectively include one or more communication frequency bands. For example, the low frequency band can include at least one low frequency communication frequency band such as B8, B26, B28, and the medium frequency band and the high frequency band can include at least one medium and high frequency communication frequency band such as B1, B3, B6, B34, B39, B40, B41, etc. Therefore, the first frequency band and the second frequency band mentioned in this embodiment can respectively include one or more communication frequency bands. Accordingly, the number of the first signal input terminal 111 and the second signal input terminal 112 can be one or more.

[0042] Among them, the amplifying circuit in the first amplifying unit 131 can be used to amplify the RF signals of multiple communication frequency bands within the first frequency band, and the amplifying circuit in the second amplifying unit 132 can be used to amplify the RF signals of multiple communication frequency bands within the second frequency band, so as to save the area of ​​the low noise amplifier 100.

[0043] Exemplarily, there are multiple first signal input terminals 111, and multiple RF signals within the first frequency band but belonging to different communication frequency bands can be input from different first signal input terminals 111 to the first amplifying unit 131 for amplification; there are multiple second signal input terminals 112, and multiple RF signals within the second frequency band but belonging to different communication frequency bands can be input from different second signal input terminals 112 to the second amplifying unit 132 for amplification; by inputting RF signals of different communication frequency bands through different signal input terminals, the low-noise amplifier 100 can be configured with corresponding impedance matching circuits or other circuits at each signal input terminal according to the communication frequency band corresponding to the RF signal input by each signal input terminal, so that the performance of the low-noise amplifier 100 is optimized when processing RF signals of different communication frequency bands.

[0044] As an implementation method, Figure 2a and Figure 2b As shown, the first shielding electrode 151 at least partially surrounds the first area Z1, or the first shielding electrode 151 at least partially surrounds the second area Z2, or the first shielding electrode 151 simultaneously surrounds at least part of the first area Z1 and at least part of the second area Z2. By arranging the first shielding electrode 151 to surround at least one of the first area Z1 and the second area Z2, the signal isolation between the first area Z1 and the second area Z2 can be improved. Moreover, when other circuit elements are provided outside the first area Z1 and the second area Z2, it is also possible to prevent the radio frequency signal from leaking from the first signal input terminal 111 of the first area Z1 or the first amplifying unit 131 to other circuit elements outside the first area Z1, and / or to prevent the radio frequency signal from leaking from the second signal input terminal 112 of the second area Z2 or the second amplifying unit 132 to other circuit elements outside the second area Z2, thereby improving the signal isolation between the first area Z1, the second area Z2 and other circuit elements.

[0045] As an implementation method, Figure 3 As shown, the low noise amplifier also includes a first signal output terminal 121 and a second signal output terminal 122, the output terminal of the first amplifying unit is connected to the first signal output terminal 121, and the output terminal of the second amplifying unit is connected to the second signal output terminal 122; wherein the first signal output terminal 121 and the second signal output terminal 122 are located on both sides of the first shielding electrode 151.

[0046] Since the first amplifying unit and the second amplifying unit are used to amplify radio frequency signals of different frequency bands, the frequency bands of the radio frequency signal outputted from the first signal output terminal 121 connected to the first amplifying unit and the radio frequency signal outputted from the second signal output terminal 122 connected to the second amplifying unit are also different. By arranging the first signal output terminal 121 and the second signal output terminal 122 on both sides of the first shielding electrode 151, the first shielding electrode 151 can be used to isolate radio frequency signals of different frequency bands outputted from the first signal output terminal 121 and the second signal output terminal 122, respectively, so as to avoid mutual interference between radio frequency signals of different frequency bands.

[0047] Exemplarily, when the first amplifying unit and the second amplifying unit work simultaneously, the first signal output terminal 121 and the second signal output terminal 122 simultaneously output radio frequency signals of different frequency bands, and adding the first shielding electrode 151 can ensure that the performance of the low noise amplifier 100 does not deteriorate.

[0048] In at least one embodiment, Figure 4a and Figure 4b As shown, the low noise amplifier further includes a third signal input terminal 113 and a third amplifying unit 133, the third signal input terminal 113 is connected to the input terminal of the third amplifying unit 133, and is arranged in a third area Z3 with the third amplifying unit 133, and the third area Z3 is adjacent to the third edge of the chip; As an implementation method, Figure 4a As shown, the first shielding electrode 151 extends between the third area Z3 and the first area Z1, wherein, when the projection of the first area Z1 on the third edge of the chip and the projection of the third area Z3 on the third edge of the chip have a projection overlapping portion, the projection of the first shielding electrode 151 on the third edge of the chip at least covers the projection overlapping portion to ensure good isolation between the radio frequency signal transmitted in the first area Z1 and the signal transmitted in the third area Z3.

[0049] As another embodiment, Figure 4b As shown, a second shielding electrode 152 is provided between the third area and the first area. When the projection of the first area Z1 on the third edge of the chip and the projection of the third area Z3 on the third edge of the chip have a projection overlap portion, the projections of the first shielding electrode 151 and the second shielding electrode 152 on the third edge of the chip at least cover the projection overlap portion, so as to ensure good isolation between the radio frequency signal transmitted in the first area Z1 and the signal transmitted in the third area Z3.

[0050] Exemplarily, when a second shielding electrode 152 is disposed between the third region and the first region, the second shielding electrode 152 may be connected to the first shielding electrode 151. When the second shielding electrode 152 and the first shielding electrode 151 are both arranged in a straight line, the second shielding electrode 152 and the first shielding electrode 151 may be arranged in the same direction and may also extend on the same straight line.

[0051] As an implementation method, Figure 4a As shown, the first shielding electrode 151 extends between the third region and the second region Z2. Exemplarily, the first shielding electrode 151 may extend in at least two different directions, one portion of which extends between the third region and the first region, and the other portion of which extends between the second region and the third region. Exemplarily, when the projection of the second region Z2 on the second edge of the chip and the projection of the third region Z3 on the second edge of the chip have a projection overlap portion, the projection of the first shielding electrode 151 on the second edge of the chip at least covers the projection overlap portion to ensure good isolation between the radio frequency signal transmitted in the second region Z2 and the radio frequency signal transmitted in the third region Z3.

[0052] As another embodiment, Figure 4b As shown, a third shielding electrode 153 is provided between the third area and the second area. When the projection of the second area Z2 on the second edge of the chip and the projection of the third area Z3 on the second edge of the chip have a projection overlap portion, the projections of the third shielding electrode 153 and the first shielding electrode 151 on the second edge of the chip at least cover the projection overlap portion, so as to ensure good isolation between the radio frequency signal transmitted in the second area Z2 and the radio frequency signal transmitted in the third area Z3.

[0053] Exemplarily, when a third shielding electrode 153 is provided between the third region Z3 and the second region Z2, the third shielding electrode 153 may extend to intersect with the first shielding electrode 151, thereby further improving the isolation between any two amplifying units among the first amplifying unit, the second amplifying unit and the third amplifying unit.

[0054] In at least one embodiment, Figure 5 to Figure 6 As shown, the low noise amplifier also includes a first signal output terminal 121, a second signal output terminal 122, a first switch S1 and a second switch S2; the output terminal of the first amplifying unit 131 is connected to the first signal output terminal 121, the output terminal of the second amplifying unit 132 is connected to the second signal output terminal 122 through the first switch S1, and the output terminal of the third amplifying unit 133 is connected to the second signal output terminal 122 through the second switch S2; wherein the first signal output terminal 121 and the second signal output terminal 122 are located on both sides of the first shielding electrode 151.

[0055] As an implementation manner, the second amplifying unit 132 and the third amplifying unit 133 are both used to amplify the radio frequency signal in the second frequency band. Since the frequency ranges are relatively close, they can be output through the same signal output terminal (for example, the second signal output terminal 122). Specifically, the low-noise amplifier 100 can switch different amplifying units to be connected to the second signal output terminal 122 by controlling the states (on or off) of the first switch S1 and the second switch S2.

[0056] It can be understood that the second frequency band can be a general term for multiple communication frequency bands within a specific frequency range, and can specifically include multiple communication frequency bands. The second amplifying unit 132 and the third amplifying unit 133 can be used to amplify radio frequency signals in different communication frequency bands within the second frequency band.

[0057] As an implementation mode, the first amplifying unit 131 is used to amplify the RF signal of the first frequency band, and the frequencies corresponding to the first frequency band and the second frequency band are greatly different, for example, the first frequency band is a low frequency band, and the second frequency band is a medium-high frequency band; or the first frequency band is a medium-high frequency band, and the second frequency band is a low frequency band. Therefore, the frequency of the RF signal output by the first signal output terminal 121 and the frequency of the RF signal output by the second RF signal output terminal 122 are greatly different. By arranging the first signal output terminal 121 and the second signal output terminal 122 on both sides of the first shielding electrode 151, the first shielding electrode 151 can be used to isolate the first signal output terminal 121 and the second signal output terminal 122, thereby improving the isolation between RF signals of different frequency bands.

[0058] In at least one embodiment, Figure 6 As shown, the first switch S1 is connected to the second signal output terminal through the first metal wiring 161, and the second switch S2 is connected to the second signal output terminal through the second metal wiring 162; wherein the second metal wiring 162 is not completely parallel to the first metal wiring 161.

[0059] It can be understood that when two metal traces are parallel to each other, coupling is easily formed between the two, thereby leaking the RF signal transmitted through the metal traces. By controlling the second metal trace 162 to be not completely parallel to the first metal trace 161, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened to reduce the leakage of the RF signal between the first metal trace 161 and the second metal trace 162.

[0060] For example, Figure 6 As shown, the second signal output terminal 122 is set in the fourth area Z4 of the chip, and the first metal wiring 161 outside the fourth area can be bent to increase the average distance between the first metal wiring 161 and the second metal wiring 162, thereby further improving the signal isolation between the two.

[0061] As an implementation method, the projections of the second metal trace 162 and the first metal trace 161 in a specific direction do not completely overlap, and the specific direction is a direction parallel to any edge of the chip. For example, the projections of the second metal trace 162 and the first metal trace 161 on the second edge of the chip do not completely overlap; or, the projections of the second metal trace 162 and the first metal trace 161 on the third edge of the chip do not completely overlap; or, the projections of the second metal trace 162 and the first metal trace 161 on the second edge of the chip do not completely overlap and the projections on the third edge of the chip do not completely overlap.

[0062] By staggering the first metal trace 161 and the second metal trace 162 , the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, thereby reducing the leakage of the radio frequency signal between the first metal trace 161 and the second metal trace 162 .

[0063] As an implementation mode, the first signal output terminal 121 and the second signal output terminal 122 are located in the fourth area Z4, and the first area Z1, the second area Z2 and the third area Z3 are respectively adjacent to the fourth area Z4. By arranging the various signal output terminals in the same area, it is possible to facilitate the connection between the low noise amplifier 100 and the subsequent circuit, and by arranging the fourth area Z4 adjacent to each area where the amplification unit is provided, it is possible to facilitate the connection between each amplification unit and the corresponding signal output terminal, thereby making the wiring of the low noise amplifier 100 more concise and the layout more compact.

[0064] In at least one embodiment, Figure 7 and Figure 8 As shown, the low noise amplifier also includes a fourth signal output terminal 124, a fifth signal output terminal 125, a third switch S3, a fourth switch S4, a fifth switch S5 and a sixth switch S6; the output terminal of the first amplifying unit is connected to the fourth signal output terminal 124 through the third switch S3, and is connected to the fifth signal output terminal 125 through the fourth switch S4; the output terminal of the second amplifying unit is connected to the fourth signal output terminal 124 through the fifth switch S5, and is connected to the fifth signal output terminal 125 through the sixth switch S6; wherein a fourth shielding electrode 154 is arranged between the fourth signal output terminal 124 and the fifth signal output terminal 125.

[0065] It should be noted that since each amplification unit and switch, as well as each switch and each signal output terminal need to be connected through metal wiring, in the embodiment of the present application, the fourth shielding electrode 154 and the metal wiring can be set in different wiring layers to prevent the metal wiring from being short-circuited.

[0066] The embodiment of the present application sets a fourth shielding electrode 154 between the fourth signal output terminal 124 and the fifth signal output terminal 125, so as to isolate the RF signal output from the fourth signal output terminal 124 and the RF signal output from the fifth signal output terminal 125, reduce the crosstalk between the two RF signals, and thus improve the overall performance of the low noise amplifier 100.

[0067] In at least one embodiment, Figure 7 and Figure 8 As shown, the low noise amplifier also includes a sixth signal output terminal 126, a seventh switch S7 and an eighth switch S8; the output terminal of the first amplifying unit is connected to the sixth signal output terminal 126 through the seventh switch S7; the output terminal of the second amplifying unit is connected to the sixth signal output terminal 126 through the eighth switch S8.

[0068] As an implementation manner, a fifth shielding electrode 155 is arranged between the sixth signal output terminal 126 and the fourth signal output terminal 124, and a sixth shielding electrode 156 is arranged between the sixth signal output terminal 126 and the fifth signal output terminal 125; the RF signal output by the sixth signal output terminal 126 is isolated from the RF signal output by the fourth signal output terminal 124 by the fifth shielding electrode 155, and the RF signal output by the sixth signal output terminal 126 is isolated from the RF signal output by the fifth signal output terminal 125 by the sixth shielding electrode 156, which can avoid interference between different RF signals output by different signal output terminals, thereby improving the isolation between different signal paths in the low-noise amplifier 100.

[0069] Illustratively, the fifth shielding electrode 155 and the sixth shielding electrode 156 may be connected to or overlap each other to improve the isolation effect.

[0070] As another embodiment, the chip is further provided with a seventh shielding electrode 157, the sixth signal output terminal 126 is located on the first side of the seventh shielding electrode 157, and the fourth signal output terminal 124 and the fifth signal output terminal 125 are located on the second side of the seventh shielding electrode 157. The isolation between the radio frequency signal output by the sixth signal output terminal 126 and the radio frequency signal output by the fifth signal output terminal 125, and the isolation between the radio frequency signal output by the sixth signal output terminal 126 and the radio frequency signal output by the fourth signal output terminal 1245 are achieved by using the same shielding electrode (i.e., the seventh shielding electrode 157), which can simplify the setting of the shielding electrode and achieve a better isolation effect with a smaller area.

[0071] It should be noted that since each amplification unit and the switch, as well as each switch and each signal output terminal need to be connected through metal wiring, in the embodiment of the present application, the fourth shielding electrode 154 and the fifth shielding electrode 155 and the metal wiring can be set in different wiring layers to prevent the metal wiring from being short-circuited.

[0072] Optionally, the fourth shielding electrode 154 and the fifth shielding electrode 155 can be disposed on one or more wiring layers, as long as they avoid ungrounded metal traces. And at least one wiring layer where the fourth shielding electrode 154 is located can be the same as or different from at least one wiring layer where the fifth shielding electrode 155 is located, and this application does not impose any limitation on this.

[0073] As an implementation method, Figure 8 As shown, the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126 are arranged in a triangle, the fourth shielding electrode 154, the fifth shielding electrode 155 and the sixth shielding electrode 156 are connected and the connection point is located within the triangle; or, the fourth shielding electrode 154 is connected to the seventh shielding electrode 157 and the connection point is located within the triangle.

[0074] Exemplarily, the fourth shielding electrode 154 , the fifth shielding electrode 155 and the sixth shielding electrode 156 are arranged in a T-shape, and the intersection of the T-shape is located in a triangular area formed by the fourth signal output terminal 124 , the fifth signal output terminal 125 and the sixth signal output terminal 126 .

[0075] Exemplarily, the fourth shielding electrode 154 and the seventh shielding electrode 157 are arranged in a T-shape, and the intersection of the T-shape is located in a triangular area formed by the fourth signal output terminal 124 , the fifth signal output terminal 125 and the sixth signal output terminal 126 .

[0076] In this embodiment, by arranging these shielding electrodes to intersect in the triangular area formed by the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126, it can ensure good signal isolation between any two signal output terminals among the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126.

[0077] As an implementation method, Figure 7 and Figure 8 As shown, the fourth signal output terminal 124 and the fifth signal output terminal 125 are disposed in the fifth zone Z5, and the first zone Z1 and the second zone Z2 are adjacent to the fifth zone Z5, respectively.

[0078] Exemplarily, when the low noise amplifier 100 further includes a sixth signal output terminal 126 , the sixth signal output terminal 126 is also disposed in the fifth zone Z5 .

[0079] By setting each signal output terminal in the same area, the connection between the low-noise amplifier 100 and the subsequent circuit can be facilitated, and by setting the fifth area Z5 adjacent to each area with an amplification unit, the connection between each amplification unit and the corresponding signal output terminal can be facilitated, thereby making the wiring of the low-noise amplifier 100 simpler and the layout more compact.

[0080] Exemplarily, the fifth region Z5 may be adjacent to the third edge of the chip, and the first edge and the second edge are two edges arranged opposite to each other on both sides of the third edge. By arranging each signal output terminal in the fifth region Z5 adjacent to the edge of the chip, the connection between the low noise amplifier 100 and the subsequent circuit can be further facilitated.

[0081] Exemplarily, when the low-noise amplifier 100 is set on the substrate by wire bonding, setting the fifth region Z5 at the edge of the chip can shorten the length of the bonding wire between each signal output terminal and the substrate, thereby reducing the parasitics of the bonding wire and its impact on the low-noise amplifier 100, and further improving the performance of the low-noise amplifier 100.

[0082] In at least one embodiment, Figure 9a and Figure 9b As shown, the low noise amplifier further includes a control circuit, which is arranged in a sixth area Z6, the sixth area Z6 is adjacent to the fourth edge of the chip, and the first area and the second area are both located on the same side of the sixth area.

[0083] As an implementation mode, the control circuit is connected to each amplifying unit in the low noise amplifier 100, and the control circuit can be used to generate a control signal to control the working state of each amplifying unit and the on and off state of each switch. Generally speaking, the control signal includes a clock signal, or the control signal switches between a high level and a low level, and the clock signal or the switching of the high and low levels will interfere with the radio frequency signal. Therefore, the present application sets each amplifying unit on the same side of the control circuit, that is, sets the control circuit in a separate area (the sixth area Z6), so that it maintains a certain distance from the radio frequency circuit (including each amplifying unit), which can reduce the interference of the control signal on the radio frequency signal transmitted in each amplifying unit.

[0084] As an implementation mode, the first shielding electrode 151 extends between the control circuit and the first amplifying unit, or an eighth shielding electrode is further provided between the control circuit and the first amplifying unit to prevent the control signal generated by the control circuit from interfering with the RF signal in the first amplifying unit.

[0085] As another embodiment, the first shielding electrode 151 extends between the control circuit and the second amplifying unit, or a ninth shielding electrode is provided between the control circuit and the second amplifying unit to prevent the control signal generated by the control circuit from interfering with the RF signal in the second amplifying unit.

[0086] As an implementation mode, the first amplifying unit 131 and the first amplifying unit 132 in each of the above-mentioned embodiments include an amplifying circuit, which includes one or more amplifying transistors. The amplifying circuit can adopt any one of a common-source amplifying structure, a common-gate amplifying structure, a common-source and common-gate amplifying structure or a distributed amplifying circuit structure, and the present application does not impose any restrictions on this.

[0087] As an implementation method, Fig.10a and Fig.10b As shown, the amplifier circuit may include only the first amplifier transistor M1. Optionally, the first amplifier transistor M1 may be Fig.10a The common source method shown or by Fig.10b The common gate method or other methods shown are connected between the signal input terminal and the signal output terminal.

[0088] Exemplarily, when the first amplifying transistor M1 is connected between the signal input terminal and the signal output terminal in a common source manner, the first terminal of the first amplifying transistor M1 is the input terminal of the amplifying circuit, which can be connected to the signal input terminal to receive the input RF signal; the second terminal of the first amplifying transistor M1 is the power supply terminal and output terminal of the amplifying circuit, which can be connected to the signal output terminal to output the amplified RF signal, and connected to the power supply terminal of the low noise amplifier 100 to receive the power supply voltage. The third terminal of the first amplifying transistor M1 is used for grounding.

[0089] As an implementation method, Fig.11a and Fig.11b As shown, the amplifier circuit includes at least one other amplifier transistor, such as a second amplifier transistor M2, in addition to the first amplifier transistor M1. Optionally, the first amplifier transistor M1 and the other amplifier transistors can be connected as shown in FIG. Fig.11a The common source and common gate method shown is connected between the signal input terminal and the signal output terminal, or it can be connected between the signal input terminal and the signal output terminal by Fig.11b The distributed amplifier circuit is connected between the signal input terminal and the signal output terminal in the manner shown or in other manners. The present application does not limit the circuit architecture adopted by the amplifier circuit.

[0090] Exemplarily, when the first amplifier transistor M1 and the second amplifier transistor M2 are connected between the signal input terminal and the signal output terminal in a common source and common gate manner, the first end of the first amplifier transistor M1 is the input terminal of the amplifier circuit, and can be connected to the signal input terminal to receive the input RF signal; the second end of the first amplifier transistor M1 is connected to the third end of the second amplifier transistor M2, and the third end of the first amplifier transistor M1 is used for grounding; the first end of the second amplifier transistor M2 can be used to receive a bias signal, and the second end of the second amplifier transistor M2 serves as the power supply terminal and output terminal of the amplifier circuit, and can be connected to the signal output terminal to output the amplified RF signal, and is connected to the power supply terminal of the low noise amplifier 100 to receive the power supply voltage.

[0091] The first amplifying transistor M1 and the second amplifying transistor M2 may be field effect transistors. Taking an N-type field effect transistor as an example, the first end of each transistor is a gate, the second end is a drain, and the third end is a source.

[0092] In at least one embodiment, Figures 10a to 12 As shown, the low noise amplifier also includes a power supply terminal Vdd and a ground terminal, and each amplifying unit may also include at least one of a first inductor L1, a second inductor L2, an input matching circuit 170, an output matching circuit 180, and a power discharge circuit 190.

[0093] For example, Fig.10a or Fig.11a As shown, the first inductor L1 is connected in series between the third terminal of the first amplifying transistor M1 and the ground terminal; the first inductor L1 can be used to increase the real part of the input impedance and improve the stability of the low noise amplifier 100.

[0094] For example, Fig.10b or Fig.11a As shown, the second inductor L2 is connected in series between the power supply end and the output end of the amplifier circuit; the second inductor L2 can act as a choke to isolate the signal interference between the DC power supply signal and the RF signal, thereby improving the stability and reliability of the low noise amplifier 100.

[0095] For example, Fig.12As shown, the input matching circuit 170 is connected to the signal input terminal, and can be used to match the input impedance of the signal input terminal and the output impedance of the previous stage circuit to reduce the loss of the RF signal during the transmission from the previous stage circuit to the signal input terminal. Optionally, the input matching circuit may include at least one third inductor L3, and the third inductor L3 is connected in series between the previous stage circuit and the signal input terminal. Exemplarily, when the low noise amplifier has multiple signal input terminals, one or more third inductors L3 are respectively connected in series between each signal input terminal and the corresponding previous stage circuit, wherein the inductance value of the third inductor L3 connected to each signal input terminal may be different according to the frequency band of the input RF signal.

[0096] The front-stage circuit may be any circuit element between the antenna and the low-noise amplifier, for example, a filter or a switch chip in a radio frequency front-end module. When the low-noise amplifier has multiple signal input terminals, different signal input terminals may be connected to the output terminals of different filters, or to different ports of the switch chip.

[0097] Optionally, the third inductor L3 in the input matching circuit may be integrated into the chip together with each transistor, or may be disposed on the substrate and implemented through metal wiring of the substrate wiring layer or using SMD devices, which is not limited in the present application.

[0098] For example, Fig.12 As shown, the output matching circuit 180 is connected between the output end of the amplifier circuit and the signal output end; the output matching circuit 180 can be used to match the output impedance of the amplifier circuit with the input impedance of the subsequent circuit to reduce the loss of the amplified RF signal during the transmission from the signal output end to the subsequent circuit. Optionally, the output matching circuit 180 may include at least one capacitor and / or inductor, and the specific circuit structure is not limited in this application.

[0099] It should be noted that, unless otherwise specified, the term "connection" in this application can mean direct connection or indirect connection. For example, the gate of the first amplifier transistor M1 can be directly connected to the signal input terminal, or it can be connected to the signal input terminal through a capacitor. For another example, the source of the first amplifier transistor M1 can be directly grounded, or it can be indirectly grounded through at least one component such as an inductor, a capacitor, or a resistor. For another example, the drain of the second amplifier transistor M2 can be directly connected to the power supply terminal Vdd, or it can be connected to the power supply terminal Vdd through a choke; the drain of the second amplifier transistor M2 can be directly connected to the signal output terminal, or it can be indirectly connected to the signal output terminal through at least one component such as an inductor, a capacitor, a resistor, or a switch.

[0100] Among them, similar to the first shielding electrode 151, other shielding electrodes in the present application, such as the second shielding electrode 152, the third shielding electrode 153, the fourth shielding electrode 154, and the fifth shielding electrode 155 can all be patterned metal films or metal traces, and can all be grounded. The isolation principle is similar to that of the first shielding electrode 151, and will not be repeated here.

[0101] The present application also provides a low noise amplifier 100 integrated in a chip. Figure 6 or Fig.13 The low noise amplifier includes a second amplifying unit 132, a third amplifying unit 133, a first switch S1, a second switch S2 and a second signal output terminal 122, wherein the first amplifying unit 132 and the second amplifying unit 133 are used to amplify radio frequency signals of different frequency bands. The output terminal of the second amplifying unit 132 is connected to the second signal output terminal 122 through the first switch S1, and the output terminal of the third amplifying unit 133 is connected to the second signal output terminal through the second switch S2.

[0102] Specifically, the connection line between the first switch S1 and the second signal output terminal 122 includes a first metal wiring 161, and the connection line between the second switch and the second signal output terminal includes a second metal wiring 162; As an implementation mode, the second metal routing 162 is not completely parallel to the first metal routing 161; by setting the second metal routing 162 to be not completely parallel to the first metal routing 161, the coupling between the first metal routing 161 and the second metal routing 162 can be weakened to reduce the leakage of the RF signal between the first metal routing 161 and the second metal routing 162, thereby improving the performance of the low noise amplifier 100.

[0103] For example, Figure 6 As shown, the second signal output terminal 122 is set in the fourth area Z4 of the chip, and the first metal wiring 161 outside the fourth area can be bent to increase the average distance between the first metal wiring 161 and the second metal wiring 162, thereby further improving the signal isolation between the two.

[0104] As an implementation method, the projections of the second metal trace 162 and the first metal trace 161 in a specific direction do not completely overlap, and the specific direction is a direction parallel to any edge of the chip. For example, the projections of the second metal trace 162 and the first metal trace 161 on the second edge of the chip do not completely overlap; or, the projections of the second metal trace 162 and the first metal trace 161 on the third edge of the chip do not completely overlap; or, the projections of the second metal trace 162 and the first metal trace 161 on the second edge of the chip do not completely overlap and the projections on the third edge of the chip do not completely overlap.

[0105] By staggering the first metal trace 161 and the second metal trace 162 , the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, and the leakage of the RF signal between the first metal trace 161 and the second metal trace 162 can be reduced, thereby improving the performance of the low noise amplifier 100 .

[0106] As an implementation mode, the first signal output terminal 121 and the second signal output terminal 122 are located in the fourth area Z4, and the first area Z1, the second area Z2 and the third area Z3 are respectively adjacent to the fourth area Z4. By arranging the various signal output terminals in the same area, it is possible to facilitate the connection between the low noise amplifier 100 and the subsequent circuit, and by arranging the fourth area Z4 adjacent to each area where the amplification unit is provided, it is possible to facilitate the connection between each amplification unit and the corresponding signal output terminal, thereby making the wiring of the low noise amplifier 100 more concise and the layout more compact.

[0107] An embodiment of the present application further provides a radio frequency chip (not shown), comprising a low noise amplifier as shown in any of the above embodiments.

[0108] Optionally, the chip of the embodiment of the present application may be a chip based on a silicon substrate, or a chip based on a silicon-on-insulator (SOI) substrate, or a chip based on a gallium arsenide (GaAs) substrate or a silicon carbide (SiC) substrate. Specifically, each switch unit may include one or more transistors, each of which may be a field effect transistor, such as a metal oxide semiconductor field effect transistor (metal oxide semiconductorfield effect transistor, MOSFET), a metal semiconductor field effect transistor (Metal semiconductorfield effect transistor, MESFET), a high electron mobility transistor (High electron mobility transistor, HEMT), and a pseudomorphic high electron mobility transistor (Pseudomorphic High Electron MobilityTransistor, pHEMT).

[0109] According to the embodiment of the present application, by improving the layout of the low noise amplifier in the RF chip and improving the isolation between different signal paths in the low noise amplifier, the insertion loss and noise coefficient of the low noise amplifier can be reduced, thereby improving the performance of the low noise amplifier 100 in many aspects.

[0110] The present application also provides a radio frequency front-end module, please refer to Fig.13The RF front-end module includes the aforementioned low-noise amplifier 100 or chip.

[0111] In some embodiments, the RF front-end module may also include at least one of an RF switch, an RF power amplifier, a filter, a duplexer, etc., which may be integrated into one module to improve integration and performance and miniaturize the size.

[0112] The RF front-end module can choose to send RF signals to the antenna port or receive RF signals from the antenna port to achieve amplification, filtering and other processing of the RF analog signal.

[0113] According to the embodiment of the present application, by improving the layout of the low noise amplifier in the RF front-end module and improving the isolation between different signal paths in the low noise amplifier, the insertion loss and noise coefficient of the low noise amplifier can be reduced, thereby improving the performance of the low noise amplifier 100 in many aspects.

[0114] An embodiment of the present application further provides an electronic device (not shown), comprising the low noise amplifier 100 or the RF front-end module 200 shown in any of the above embodiments.

[0115] Among them, the electronic device can be a communication device such as a mobile phone, a tablet computer, a vehicle-mounted terminal, and of course, it can also be other communication devices with communication functions. The embodiments of the present application do not limit the specific type of the electronic device.

[0116] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments can still be modified, or some of the technical features can be replaced by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A low noise amplifier, integrated in a chip, characterized in that: It includes a first signal input terminal, a second signal input terminal, a first amplifying unit, and a second amplifying unit, wherein the first signal input terminal and the second signal input terminal are used to input radio frequency signals of different frequency bands; The first signal input terminal is connected to the input terminal of the first amplifying unit, and is arranged in a first area with the first amplifying unit, and the first area is adjacent to a first edge of the chip; The second signal input terminal is connected to the input terminal of the second amplifying unit, and is arranged in a second area with the second amplifying unit, and the second area is adjacent to a second edge of the chip; Wherein, a first shielding electrode is arranged between the first area and the second area.

2. The low noise amplifier according to claim 1, characterized in that: The first shielding electrode at least partially surrounds the first region, and / or the first shielding electrode at least partially surrounds the second region.

3. The low noise amplifier according to claim 1, characterized in that: The low noise amplifier further comprises a first signal output terminal and a second signal output terminal, the output terminal of the first amplifying unit is connected to the first signal output terminal, and the output terminal of the second amplifying unit is connected to the second signal output terminal; Wherein, the first signal output end and the second signal output end are located on two sides of the first shielding electrode.

4. The low noise amplifier according to claim 1, characterized in that: The low noise amplifier further comprises a third signal input terminal and a third amplifying unit, wherein the third signal input terminal is connected to the input terminal of the third amplifying unit and is arranged in a third region with the third amplifying unit, and the third region is adjacent to a third edge of the chip; Wherein, the first shielding electrode extends between the third region and the first region, or a second shielding electrode is provided between the third region and the first region; and / or, The first shielding electrode extends between the second region and the third region, or a third shielding electrode is provided between the third region and the second region.

5. The low noise amplifier according to claim 4, characterized in that: The low noise amplifier further comprises a first signal output terminal, a second signal output terminal, a first switch and a second switch; The output end of the first amplifying unit is connected to the first signal output end, the output end of the second amplifying unit is connected to the second signal output end through the first switch, and the output end of the third amplifying unit is connected to the second signal output end through the second switch; Wherein, the first signal output end and the second signal output end are located on two sides of the first shielding electrode.

6. The low noise amplifier according to claim 5, characterized in that: The first switch is connected to the second signal output terminal through a first metal wiring, and the second switch is connected to the second signal output terminal through a second metal wiring; The second metal routing is not completely parallel to the first metal routing; and / or the projections of the second metal routing and the first metal routing in a specific direction do not completely overlap, and the specific direction is a direction parallel to any edge of the chip.

7. The low noise amplifier according to any one of claims 3 to 6, characterized in that: The first signal output terminal and the second signal output terminal are located in a fourth area, and the first area, the second area and the third area are adjacent to the fourth area respectively.

8. The low noise amplifier according to claim 1, characterized in that: The low noise amplifier further includes a fourth signal output terminal, a fifth signal output terminal, a third switch, a fourth switch, a fifth switch and a sixth switch; The output end of the first amplifying unit is connected to the fourth signal output end through the third switch, and is connected to the fifth signal output end through the fourth switch; The output end of the second amplifying unit is connected to the fourth signal output end through the fifth switch, and is connected to the fifth signal output end through the sixth switch; Wherein, a fourth shielding electrode is arranged between the fourth signal output terminal and the fifth signal output terminal.

9. The low noise amplifier according to claim 8, characterized in that: The low noise amplifier further includes a sixth signal output terminal, a seventh switch and an eighth switch; The output end of the first amplifying unit is connected to the sixth signal output end through the seventh switch; The output end of the second amplifying unit is connected to the sixth signal output end through the eighth switch; Among them, a fifth shielding electrode is arranged between the sixth signal output terminal and the fourth signal output terminal, and a sixth shielding electrode is arranged between the sixth signal output terminal and the fifth signal output terminal; or, the chip is also provided with a seventh shielding electrode, the sixth signal output terminal is located on the first side of the seventh shielding electrode, and the fourth signal output terminal and the fifth signal output terminal are located on the second side of the seventh shielding electrode.

10. The low noise amplifier according to claim 9, characterized in that: The fourth signal output terminal, the fifth signal output terminal and the sixth signal output terminal are arranged in a triangle, and the fourth shielding electrode, the fifth shielding electrode and the sixth shielding electrode are connected and the connection point is located within the triangle; or, the fourth shielding electrode is connected to the seventh shielding electrode and the connection point is located within the triangle.

11. The low noise amplifier according to any one of claims 8 to 10, characterized in that: The fourth signal output terminal and the fifth signal output terminal are disposed in a fifth region, and the first region and the second region are adjacent to the fifth region, respectively.

12. The low noise amplifier according to claim 11, characterized in that: The fifth region is adjacent to a third edge of the chip, and the first edge and the second edge are two edges arranged opposite to each other on both sides of the third edge.

13. The low noise amplifier according to any one of claims 1 to 6 or 8 to 10, characterized in that: The low noise amplifier further includes a control circuit, which is disposed in a sixth region, the sixth region is adjacent to a fourth edge of the chip, and the first region and the second region are both located on the same side of the sixth region.

14. A low noise amplifier, integrated in a chip, characterized in that: It includes a second amplifying unit, a third amplifying unit, a first switch, a second switch and a second signal output end, wherein the first amplifying unit and the second amplifying unit are used to amplify radio frequency signals of different frequency bands; The output end of the second amplifying unit is connected to the second signal output end through the first switch, and the output end of the third amplifying unit is connected to the second signal output end through the second switch; Wherein, the connection line between the first switch and the second signal output terminal includes a first metal wiring, and the connection line between the second switch and the second signal output terminal includes a second metal wiring; The second metal routing is not completely parallel to the first metal routing; and / or, the projections of the second metal routing and the first metal routing in a specific direction do not completely overlap, and the specific direction is a direction parallel to any edge of the chip.

15. A radio frequency chip, characterized in that: Comprising a low noise amplifier as described in any one of claims 1-14.

16. A radio frequency front-end module, characterized in that: It comprises the low noise amplifier as claimed in any one of claims 1 to 14 or the chip as claimed in claim 15.

Images