Low noise amplifier, radio frequency chip and radio frequency front end module

Abstract

The application discloses a low noise amplifier and a radio frequency signal and a radio frequency front end module comprising the low noise amplifier, wherein the low noise amplifier comprises a first signal input end, a second signal input end, a first amplification unit and a second amplification unit; the first signal input end is connected to an input end of the first amplification unit and is arranged in a first region with the first amplification unit; the second signal input end is connected to an input end of the second amplification unit and is arranged in a second region with the second amplification unit; wherein a first shielding electrode is arranged between the first region and the second region. In the embodiment of the application, the first shielding electrode is arranged to isolate different radio frequency signal paths, on the one hand, to reduce leakage of the radio frequency signal in the input and amplification process and reduce the insertion loss of the low noise amplifier; on the other hand, to avoid mutual interference of different radio frequency signals in the input and amplification process, so as to improve the noise figure of the low noise amplifier.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a low-noise amplifier, a radio frequency chip, and a radio frequency front-end module. Background Technology

[0002] With the continuous development of wireless communication technology, mobile communication devices need to support multi-band operation to meet the needs of different application scenarios.

[0003] As a key component in radio frequency (RF) front-end circuits, low-noise amplifiers typically need to support multiple frequency bands simultaneously to amplify weak signals within different frequency ranges. However, in existing technologies, there is mutual interference between signals from different frequency bands, which degrades the performance of low-noise amplifiers. Summary of the Invention

[0004] This application proposes a low-noise amplifier and a radio frequency signal and radio frequency front-end module including the low-noise amplifier, which can reduce mutual interference between radio frequency signals of different frequency bands and improve the performance of the low-noise amplifier.

[0005] In a first aspect, embodiments of this application provide a low-noise amplifier, which is integrated within a chip and includes a first signal input terminal, a second signal input terminal, a first amplification unit, and a second amplification unit. The first signal input terminal and the second signal input terminal are used to input radio frequency signals of different frequency bands.

[0006] The first signal input terminal is connected to the input terminal of the first amplification unit and is disposed in the first region, which is adjacent to the first edge of the chip;

[0007] The second signal input terminal is connected to the input terminal of the second amplification unit and is disposed in the second region, which is adjacent to the second edge of the chip;

[0008] A first shielding electrode is provided between the first region and the second region.

[0009] According to the embodiment of the present application, by arranging the first shielding electrode 151 between the first region Z1 and the second region Z2, the different radio frequency signals input by the first signal input end 111 and the second signal input end 112 are isolated, and the different radio frequency signals amplified by the first amplification unit 131 and the second amplification unit 132 are isolated. On the one hand, the leakage of the radio frequency signals in the input and amplification process is reduced, and the insertion loss of the low noise amplifier 100 is reduced. On the other hand, the different radio frequency signals in the input and amplification process are prevented from interfering with each other to cause the deterioration of the noise figure of the low noise amplifier 100, so that the noise figure of the low noise amplifier 100 is improved. Therefore, the performance of the low noise amplifier 100 can be improved in many aspects.

[0010] In a second aspect, the embodiment of the present application provides a low noise amplifier integrated in a chip, and comprising a second amplification unit, a third amplification unit, a first switch, a second switch and a second signal output end, the first amplification unit and the second amplification unit are used for amplifying radio frequency signals of different frequency bands.

[0011] The output end of the second amplification unit is connected to the second signal output end through the first switch, and the output end of the third amplification unit is connected to the second signal output end through the second switch.

[0012] The connection line between the first switch and the second signal output end comprises a first metal trace, and the connection line between the second switch and the second signal output end comprises a second metal trace.

[0013] The second metal trace is not completely parallel to the first metal trace, and / or the projection of the second metal trace on the first metal trace in a specific direction is not completely overlapped, and the specific direction is a direction parallel to any edge of the chip.

[0014] According to the embodiment of the present application, by arranging the second metal trace 162 and the first metal trace 161 not completely parallel or staggered, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, so as to reduce the leakage of the radio frequency signals between the first metal trace 161 and the second metal trace 162, thereby improving the performance of the low noise amplifier 100.

[0015] In a third aspect, the embodiment of the present application provides a radio frequency chip comprising the low noise amplifier provided in the first aspect or the second aspect.

[0016] In a fourth aspect, the embodiment of the present application provides a radio frequency front-end module comprising the low noise amplifier provided in the first aspect or the second aspect, or comprising the radio frequency chip provided in the third aspect.

[0017] It should be understood that the general description and detailed description of the foregoing are only exemplary and explanatory, and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0019] Figure 1a and Figure 1b respectively show structural schematic diagrams of a low noise amplifier provided by the embodiments of the present application.

[0020] Figure 2a and Figure 2b respectively show structural schematic diagrams of another low noise amplifier provided by the embodiments of the present application.

[0021] Figure 3 show a structural schematic diagram of still another low noise amplifier provided by the embodiments of the present application.

[0022] Figure 4a and Figure 4b respectively show structural schematic diagrams of still another low noise amplifier provided by the embodiments of the present application.

[0023] Figure 5 show a circuit schematic diagram of a low noise amplifier provided by the embodiments of the present application.

[0024] Figure 6 show a structural schematic diagram of still another low noise amplifier provided by the embodiments of the present application.

[0025] Figure 7 show a structural schematic diagram of still another low noise amplifier provided by the embodiments of the present application.

[0026] Figure 8 show a structural schematic diagram of Figure 7 the fifth region in FIG. 5.

[0027] Figure 9a and Figure 9b respectively show structural schematic diagrams of still another low noise amplifier provided by the embodiments of the present application.

[0028] Figure 10a and Figure 10b respectively show circuit schematic diagrams of another low noise amplifier provided by the embodiments of the present application.

[0029] Figure 11a andFigure 11b Fig. 1 shows a circuit schematic diagram of another low noise amplifier provided by an embodiment of the present application.

[0030] Figure 12 Fig. 1 shows a circuit schematic diagram of another low noise amplifier provided by an embodiment of the present application.

[0031] Figure 13 Fig. 1 shows a circuit schematic diagram of another low noise amplifier provided by an embodiment of the present application.

[0032] Figure 14 Fig. 1 shows a circuit schematic diagram of another low noise amplifier provided by an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to make the personnel in the technical field better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by the personnel in the technical field without creative labor fall within the scope of protection of the present application.

[0034] The terms "first", "second", and the like in the present application are used to distinguish different objects, rather than to describe a specific order. The term "multiple" means two or more. The term "and / or" means at least one of the listed objects, for example, "A and / or B" can be any of the following 3 cases: including A but not including B, including B but not including A, and including A and B.

[0035] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but can optionally include other steps or units not listed or can optionally include other steps or units inherent to the process, method, product or device.

[0036] In this document, the term "embodiment" means that the specific features, structures or characteristics described in connection with the embodiment can be included in at least one embodiment of the present application. The phrase appears in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily mutually exclusive or alternative to other embodiments. The skilled person in the art explicitly and implicitly understands that the embodiments described herein can be combined with other embodiments.

[0037] The present application provides a low noise amplifier 100 integrated in a chip 10, please refer to Figure 1a and Figure 1bThe low noise amplifier 100 comprises a first signal input end 111, a second signal input end 112, a first amplification unit 131, and a second amplification unit 132. The first signal input end 111 is connected to the input end of the first amplification unit, and the first signal input end 111 and the first amplification unit are arranged in a first region Z1 adjacent to a first edge of the chip 10. The second signal input end 112 is connected to the input end of the second amplification unit 132, and the second signal input end 112 and the second amplification unit 132 are arranged in a second region Z2 adjacent to a second edge of the chip.

[0038] As an implementation form, as shown in Figure 1a The first edge and the second edge of the chip can be two opposite edges, so that the first signal input end 111 and the second signal input end 112 are arranged adjacent to the two opposite edges of the chip, the distance between the first signal input end 111 and the second signal input end 112 is increased, the leakage of the radio frequency signal between the first signal input end 111 and the second signal input end 112 is reduced, and the isolation between different signal paths in the low noise amplifier 100 is improved.

[0039] It should be noted that the first region Z1 adjacent to the first edge of the chip can mean that there is no other circuit element arranged between the periphery of the first region Z1 and the first edge, for example, no transistor, capacitor or the like circuit element is arranged between the periphery of the first region Z1 and the first edge, except for the necessary metal trace, via or shielding pattern.

[0040] Alternatively, the first region Z1 adjacent to the first edge of the chip can mean that the minimum distance between the first region Z1 and the first edge is less than a preset distance threshold, for example, the minimum distance between the first region Z1 and the first edge is less than 1 / 10 of any side length of the chip layout, so that the first region Z1 is considered to be arranged adjacent to the first edge.

[0041] The second region Z2 is adjacent to the second edge of the chip, and the other regions appearing later are adjacent to the other edges of the chip, and the meanings are similar, which will not be described in detail.

[0042] As another implementation form, as shown in Figure 1b The first edge and the second edge of the chip can also be two adjacent edges, so that the layout of other circuit elements in the chip can be facilitated.

[0043] The first shielding electrode 151 is arranged between the first region and the second region. The first shielding electrode 151 can be a patterned metal film or a metal trace, and the first shielding electrode 151 can be grounded, so that the radio frequency signal leaked from the first amplification unit 131 or the second amplification unit 132 to the shielding electrode 151 is transmitted to the ground to avoid interference with the other amplification unit.

[0044] Specifically, the chip 10 includes a substrate and a plurality of wiring layers prepared on the substrate, wherein the first shielding electrode 151 can be formed in one or more wiring layers of the chip 10, and a projection of the first shielding electrode 151 on the substrate is at least partially located between the first region Z1 and the second region Z2.

[0045] In the embodiment of the present application, by arranging the first shielding electrode 151 between the first region Z1 and the second region Z2, the different radio frequency signals respectively input by the first signal input end 111 and the second signal input end 112 are isolated, and the different radio frequency signals respectively amplified by the first amplification unit 131 and the second amplification unit 132 are isolated. On the one hand, the leakage of the radio frequency signals in the input and amplification process is reduced, and the insertion loss of the low noise amplifier 100 is reduced. On the other hand, the different radio frequency signals in the input and amplification process are prevented from interfering with each other to cause the deterioration of the noise figure of the low noise amplifier 100, so as to improve the noise figure of the low noise amplifier 100. Therefore, the performance of the low noise amplifier 100 can be improved in many aspects.

[0046] As an implementation manner, the first signal input end 111 and the second signal input end 112 are used to input radio frequency signals of different frequency bands, and correspondingly, the first amplification unit 131 and the second amplification unit 132 are used to amplify radio frequency signals of different frequency bands. For example, the first amplification unit 131 is used to amplify radio frequency signals of a first frequency band, and the second amplification unit 132 is used to amplify radio frequency signals of a second frequency band, wherein the frequency range of the first frequency band and the frequency range of the second frequency band do not completely overlap. For example, the first frequency band can be a low frequency band, and the second frequency band can be a medium frequency band or a high frequency band (hereinafter referred to as “medium-high frequency band”). By using different amplification units to amplify radio frequency signals of different frequency bands, the isolation between signal paths of different frequency bands can be improved.

[0047] It can be understood that the low frequency band, the medium frequency band and the high frequency band are collectively referred to as a plurality of communication frequency bands in a specific frequency range, and the low frequency band, the medium frequency band and the high frequency band can each include one or more communication frequency bands. For example, the low frequency band can include at least one low frequency communication frequency band such as B8, B26 and B28, and the medium frequency band and the high frequency band can include at least one medium-high frequency communication frequency band such as B1, B3, B6, B34, B39, B40 and B41. Therefore, the first frequency band and the second frequency band mentioned in the embodiment can each include one or more communication frequency bands. Correspondingly, the number of the first signal input end 111 and the second signal input end 112 can each be one or more.

[0048] The amplification circuit in the first amplification unit 131 can be configured to amplify the radio frequency signals of multiple communication frequency bands in the first frequency band, and the amplification circuit in the second amplification unit 132 can be configured to amplify the radio frequency signals of multiple communication frequency bands in the second frequency band, so as to save the area of the low noise amplifier 100.

[0049] For example, the first signal input end 111 has multiple first signal input ends, and multiple radio frequency signals in the first frequency band but belonging to different communication frequency bands can be input to the first amplification unit 131 from different first signal input ends 111 for amplification; the second signal input end 112 has multiple second signal input ends, and multiple radio frequency signals in the second frequency band but belonging to different communication frequency bands can be input to the second amplification unit 132 from different second signal input ends 112 for amplification; by inputting radio frequency signals of different communication frequency bands through different signal input ends, the low noise amplifier 100 can be configured with corresponding impedance matching circuits or other circuits at each signal input end according to the communication frequency band corresponding to the radio frequency signal input by each signal input end, so that the performance of the low noise amplifier 100 in processing radio frequency signals of different communication frequency bands is optimal.

[0050] As an implementation mode, as shown in Figure 2a and Figure 2b The first shielding electrode 151 at least partially surrounds the first region Z1, or the first shielding electrode 151 at least partially surrounds the second region Z2, or the first shielding electrode 151 simultaneously surrounds at least part of the first region Z1 and at least part of the second region Z2. By arranging the first shielding electrode 151 to surround at least one of the first region Z1 and the second region Z2, the signal isolation degree between the first region Z1 and the second region Z2 can be improved. Moreover, when other circuit elements are arranged outside the first region Z1 and the second region Z2, the radio frequency signals can be prevented from leaking from the first signal input end 111 or the first amplification unit 131 of the first region Z1 to the other circuit elements outside the first region Z1, and / or the radio frequency signals can be prevented from leaking from the second signal input end 112 or the second amplification unit 132 of the second region Z2 to the other circuit elements outside the second region Z2, so as to improve the signal isolation degree between the first region Z1, the second region Z2 and the other circuit elements.

[0051] As an implementation mode, as shown in Figure 3 The low noise amplifier further comprises a first signal output end 121 and a second signal output end 122, the output end of the first amplification unit is connected to the first signal output end 121, and the output end of the second amplification unit is connected to the second signal output end 122; wherein the first signal output end 121 and the second signal output end 122 are located on both sides of the first shielding electrode 151.

[0052] Since the first amplification unit and the second amplification unit are used to amplify radio frequency signals of different frequency bands, the radio frequency signals outputted by the first signal output end 121 connected with the first amplification unit and the radio frequency signals outputted by the second signal output end 122 connected with the second amplification unit are also of different frequency bands. By arranging the first signal output end 121 and the second signal output end 122 on both sides of the first shielding electrode 151, the first shielding electrode 151 can be used to isolate the radio frequency signals of different frequency bands outputted from the first signal output end 121 and the second signal output end 122 respectively, thereby avoiding mutual interference between the radio frequency signals of different frequency bands.

[0053] Exemplarily, when the first amplification unit and the second amplification unit work simultaneously, the first signal output end 121 and the second signal output end 122 simultaneously output radio frequency signals of different frequency bands, and the first shielding electrode 151 can be added to ensure that the performance of the low noise amplifier 100 is not deteriorated.

[0054] In at least one embodiment, as shown in Figure 4a and Figure 4b , the low noise amplifier further comprises a third signal input end 113 and a third amplification unit 133, the third signal input end 113 is connected to the input end of the third amplification unit 133, and the third amplification unit 133 is arranged in a third region Z3 adjacent to the third edge of the chip.

[0055] As an implementation, as shown in Figure 4a , the first shielding electrode 151 extends to the third region Z3 and the first region Z1, wherein when the projection of the first region Z1 on the third edge of the chip and the projection of the third region Z3 on the third edge of the chip have a projection overlapping part, the projection of the first shielding electrode 151 on the third edge of the chip covers at least the projection overlapping part, so as to ensure that the radio frequency signals transmitted in the first region Z1 and the signals transmitted in the third region Z3 have good isolation.

[0056] As another implementation, as shown in Figure 4b , a second shielding electrode 152 is arranged between the third region and the first region. Wherein when the projection of the first region Z1 on the third edge of the chip and the projection of the third region Z3 on the third edge of the chip have a projection overlapping part, the projections of the first shielding electrode 151 and the second shielding electrode 152 on the third edge of the chip cover at least the projection overlapping part, so as to ensure that the radio frequency signals transmitted in the first region Z1 and the signals transmitted in the third region Z3 have good isolation.

[0057] Exemplarily, when the second shielding electrode 152 is arranged between the third region and the first region, the second shielding electrode 152 can be in contact with the first shielding electrode 151. When the second shielding electrode 152 and the first shielding electrode 151 are both arranged in a straight line, the second shielding electrode 152 and the first shielding electrode 151 can be arranged in the same direction and can also extend on the same straight line.

[0058] As an implementation form, as shown in Figure 4a , the first shielding electrode 151 extends between the third region and the second region Z2. Exemplarily, the first shielding electrode 151 can extend in at least two different directions, one part of which extends between the third region and the first region, and the other part of which extends between the second region and the third region. Exemplarily, when the projection of the second region Z2 on the second edge of the chip has a projection overlapping part with the projection of the third region Z3 on the second edge of the chip, the projection of the first shielding electrode 151 on the second edge of the chip covers at least the projection overlapping part, so as to ensure good isolation between the radio frequency signals transmitted in the second region Z2 and the radio frequency signals transmitted in the third region Z3.

[0059] As another implementation form, as shown in Figure 4b , a third shielding electrode 153 is arranged between the third region and the second region. When the projection of the second region Z2 on the second edge of the chip has a projection overlapping part with the projection of the third region Z3 on the second edge of the chip, the projection of the third shielding electrode 153 and the first shielding electrode 151 on the second edge of the chip covers at least the projection overlapping part, so as to ensure good isolation between the radio frequency signals transmitted in the second region Z2 and the radio frequency signals transmitted in the third region Z3.

[0060] Exemplarily, when the third shielding electrode 153 is arranged between the third region Z3 and the second region Z2, the third shielding electrode 153 can extend to intersect with the first shielding electrode 151, so as to further improve the isolation between any two of the first amplification unit, the second amplification unit and the third amplification unit.

[0061] In at least one embodiment, as shown in Figure 5 to Figure 6 , the low-noise amplifier further includes a first signal output end 121, a second signal output end 122, a first switch S1 and a second switch S2; the output end of the first amplification unit 131 is connected to the first signal output end 121, the output end of the second amplification unit 132 is connected to the second signal output end 122 through the first switch S1, and the output end of the third amplification unit 133 is connected to the second signal output end 122 through the second switch S2; wherein the first signal output end 121 and the second signal output end 122 are located on both sides of the first shielding electrode 151.

[0062] As an implementation, the second amplification unit 132 and the third amplification unit 133 are both used for amplifying radio frequency signals of the second frequency band, and since the frequency ranges are relatively close, the radio frequency signals can be output through the same signal output end (for example, the second signal output end 122). Specifically, the low-noise amplifier 100 can control the states (on or off) of the first switch S1 and the second switch S2 to switch different amplification units connected to the second signal output end 122.

[0063] It can be understood that the second frequency band can be a general term of multiple communication frequency bands in a specific frequency range, and specifically can include multiple communication frequency bands, and the second amplification unit 132 and the third amplification unit 133 can be used for amplifying radio frequency signals of different communication frequency bands in the second frequency band range.

[0064] As an implementation, the first amplification unit 131 is used for amplifying radio frequency signals of the first frequency band, and the frequencies of the first frequency band and the second frequency band are greatly different, for example, the first frequency band is a low frequency band, and the second frequency band is a medium-high frequency band; or the first frequency band is a medium-high frequency band, and the second frequency band is a low frequency band. Therefore, the frequency of the radio frequency signal output by the first signal output end 121 and the frequency of the radio frequency signal output by the second radio frequency signal output end 122 are greatly different, and by arranging the first signal output end 121 and the second signal output end 122 on both sides of the first shielding electrode 151, the first signal output end 121 and the second signal output end 122 can be isolated by the first shielding electrode 151, thereby improving the isolation between radio frequency signals of different frequency bands.

[0065] In at least one embodiment, as shown in Figure 6 the first switch S1 connects the second signal output end through the first metal trace 161, and the second switch S2 connects the second signal output end through the second metal trace 162; wherein the second metal trace 162 is not completely parallel to the first metal trace 161.

[0066] It can be understood that when two metal traces are parallel to each other, coupling is easily formed between them, thereby causing leakage of radio frequency signals transmitted through the metal traces, and by controlling the second metal trace 162 to be not completely parallel to the first metal trace 161, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened to reduce the leakage of radio frequency signals between the first metal trace 161 and the second metal trace 162.

[0067] Exemplarily, as shown in Figure 6 the second signal output end 122 is arranged in the fourth region Z4 of the chip, and the part of the first metal trace 161 outside the fourth region can be arranged in a bent manner to increase the average distance between the first metal trace 161 and the second metal trace 162, thereby further improving the signal isolation between them.

[0068] As an implementation, the projection of the second metal trace 162 on a certain direction is not completely overlapped with the projection of the first metal trace 161 on the certain direction, and the certain direction is parallel to any edge of the chip. For example, the projection of the second metal trace 162 on the second edge of the chip is not completely overlapped with the projection of the first metal trace 161 on the second edge of the chip; or, the projection of the second metal trace 162 on the third edge of the chip is not completely overlapped with the projection of the first metal trace 161 on the third edge of the chip; or, the projection of the second metal trace 162 on the second edge of the chip is not completely overlapped with the projection of the first metal trace 161 on the second edge of the chip, and the projection of the second metal trace 162 on the third edge of the chip is not completely overlapped with the projection of the first metal trace 161 on the third edge of the chip.

[0069] By staggering the first metal trace 161 and the second metal trace 162, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, and the leakage of the radio frequency signal between the first metal trace 161 and the second metal trace 162 can be reduced.

[0070] As an implementation, the first signal output end 121 and the second signal output end 122 are located in the fourth region Z4, and the first region Z1, the second region Z2 and the third region Z3 are adjacent to the fourth region Z4. By arranging each signal output end in the same region, the connection of the low noise amplifier 100 and the subsequent circuit can be facilitated, and by arranging the fourth region Z4 adjacent to each region where the amplification unit is arranged, the connection of each amplification unit and the corresponding signal output end can be facilitated, so that the wiring of the low noise amplifier 100 is more simple and the layout is more compact.

[0071] In at least one embodiment, as shown in Figure 7 and Figure 8 The low noise amplifier further includes a fourth signal output end 124, a fifth signal output end 125, a third switch S3, a fourth switch S4, a fifth switch S5 and a sixth switch S6; the output end of the first amplification unit is connected to the fourth signal output end 124 through the third switch S3 and connected to the fifth signal output end 125 through the fourth switch S4; the output end of the second amplification unit is connected to the fourth signal output end 124 through the fifth switch S5 and connected to the fifth signal output end 125 through the sixth switch S6; and a fourth shielding electrode 154 is arranged between the fourth signal output end 124 and the fifth signal output end 125.

[0072] It should be noted that, since the connection between each amplification unit and switch and the connection between each switch and each signal output end needs to be made through a metal trace, in the embodiments of the present application, the fourth shielding electrode 154 and the metal trace can be arranged in different wiring layers to prevent the metal trace from being short-circuited.

[0073] The embodiment of the application can isolate the radio frequency signals output from the fourth signal output end 124 and the radio frequency signals output from the fifth signal output end 125 by arranging the fourth shielding electrode 154 between the fourth signal output end 124 and the fifth signal output end 125, reduce the crosstalk between the two radio frequency signals, and thus improve the overall performance of the low noise amplifier 100.

[0074] In at least one embodiment, as shown in Figure 7 and Figure 8 The low noise amplifier further includes a sixth signal output end 126, a seventh switch S7 and an eighth switch S8; the output end of the first amplification unit is connected to the sixth signal output end 126 through the seventh switch S7; and the output end of the second amplification unit is connected to the sixth signal output end 126 through the eighth switch S8.

[0075] As an implementation, the sixth signal output end 126 and the fourth signal output end 124 are arranged with a fifth shielding electrode 155, and the sixth signal output end 126 and the fifth signal output end 125 are arranged with a sixth shielding electrode 156; the radio frequency signals output from the sixth signal output end 126 and the radio frequency signals output from the fourth signal output end 124 are isolated through the fifth shielding electrode 155, and the radio frequency signals output from the sixth signal output end 126 and the radio frequency signals output from the fifth signal output end 125 are isolated through the sixth shielding electrode 156, which can avoid interference between different radio frequency signals output from different signal output ends, and thus improve the isolation degree between different signal paths in the low noise amplifier 100.

[0076] Exemplarily, the fifth shielding electrode 155 and the sixth shielding electrode 156 can be connected or overlapped with each other to improve the isolation effect.

[0077] As another implementation, the chip is further provided with a seventh shielding electrode 157, the sixth signal output end 126 is located at a first side of the seventh shielding electrode 157, and the fourth signal output end 124 and the fifth signal output end 125 are located at a second side of the seventh shielding electrode 157. The isolation between the radio frequency signals output from the sixth signal output end 126 and the radio frequency signals output from the fifth signal output end 125, and the isolation between the radio frequency signals output from the sixth signal output end 126 and the radio frequency signals output from the fourth signal output end 1245 are realized by the same shielding electrode (i.e. the seventh shielding electrode 157), which can simplify the arrangement of the shielding electrode and realize a better isolation effect with a smaller area.

[0078] It should be noted that, since each amplification unit and the switch need to be connected through metal wiring, and each switch and each signal output terminal need to be connected through metal wiring, in the embodiment of the present application, the fourth shielding electrode 154 and the fifth shielding electrode 155 and the metal wiring can be arranged in different wiring layers to prevent the metal wiring from being short-circuited.

[0079] Optionally, the fourth shielding electrode 154 and the fifth shielding electrode 155 can be arranged in one or more wiring layers as long as they avoid the ungrounded metal wiring. The at least one wiring layer where the fourth shielding electrode 154 is arranged and the at least one wiring layer where the fifth shielding electrode 155 is arranged can be the same or different, which is not limited in the present application.

[0080] As an embodiment, as shown in Figure 8 , the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126 are arranged in a triangular shape, the fourth shielding electrode 154, the fifth shielding electrode 155 and the sixth shielding electrode 156 are connected and the contact point is located in the triangle; or, the fourth shielding electrode 154 and the seventh shielding electrode 157 are connected and the contact point is located in the triangle.

[0081] Exemplarily, the fourth shielding electrode 154, the fifth shielding electrode 155 and the sixth shielding electrode 156 are arranged in a T shape, and the intersection of the T shape is located in the triangular region formed by the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126.

[0082] Exemplarily, the fourth shielding electrode 154 and the seventh shielding electrode 157 are arranged in a T shape, and the intersection of the T shape is located in the triangular region formed by the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126.

[0083] The present embodiment can ensure that any two of the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126 have good signal isolation by arranging the shielding electrodes to intersect in the triangular region formed by the fourth signal output terminal 124, the fifth signal output terminal 125 and the sixth signal output terminal 126.

[0084] As an embodiment, as shown in Figure 7 and Figure 8 , the fourth signal output terminal 124 and the fifth signal output terminal 125 are arranged in the fifth region Z5, and the first region Z1 and the second region Z2 are adjacent to the fifth region Z5.

[0085] Exemplarily, when the low-noise amplifier 100 further includes a sixth signal output terminal 126, the sixth signal output terminal 126 is also arranged in the fifth region Z5.

[0086] By arranging the signal output terminals in the same region, the connection of the low noise amplifier 100 and the subsequent circuit can be facilitated, and by arranging the fifth region Z5 adjacent to each region in which the amplification unit is arranged, the connection of each amplification unit and the corresponding signal output terminal can be facilitated, so that the wiring of the low noise amplifier 100 is more concise and the layout is more compact.

[0087] Exemplarily, the fifth region Z5 can be adjacent to the third edge of the chip, and the first edge and the second edge are two edges arranged opposite on both sides of the third edge. By arranging the signal output terminals in the fifth region Z5 adjacent to the edge of the chip, the connection of the low noise amplifier 100 and the subsequent circuit can be further facilitated.

[0088] Exemplarily, when the low noise amplifier 100 is arranged on the substrate by wire bonding, arranging the fifth region Z5 at the edge of the chip can shorten the length of the bonding wire between each signal output terminal and the substrate, thereby reducing the parasitic of the bonding wire and its influence on the low noise amplifier 100, and further improving the performance of the low noise amplifier 100.

[0089] In at least one embodiment, as shown in Figure 9a and Figure 9b The low noise amplifier further includes a control circuit, and the control circuit is arranged in a sixth region Z6 adjacent to a fourth edge of the chip, and the first region and the second region are on the same side of the sixth region.

[0090] As an implementation, the control circuit has a connection relationship with each amplification unit in the low noise amplifier 100, and the control circuit can be used to generate a control signal to control the working state of each amplification unit and the on-off state of each switch. Generally, the control signal includes a clock signal, or the control signal switches between high and low levels, and the clock signal or the switching of high and low levels will cause interference to the radio frequency signal. Therefore, by arranging each amplification unit on the same side of the control circuit, i.e. arranging the control circuit in a separate region (the sixth region Z6), maintaining a certain distance between the control circuit and the radio frequency circuit (including each amplification unit), the interference of the control signal to the radio frequency signal transmitted in each amplification unit can be reduced.

[0091] As an implementation, the first shielding electrode 151 extends between the control circuit and the first amplification unit, or an eighth shielding electrode is further arranged between the control circuit and the first amplification unit, so as to avoid the interference of the control signal generated by the control circuit to the radio frequency signal in the first amplification unit.

[0092] As another implementation, the first shielding electrode 151 extends to between the control circuit and the second amplification unit, or a ninth shielding electrode is further arranged between the control circuit and the second amplification unit to avoid the control signal generated by the control circuit from interfering with the radio frequency signal in the second amplification unit.

[0093] As an implementation, the first amplification unit 131 and the first amplification unit 132 in each of the above embodiments each include an amplification circuit, which includes one or more amplification transistors, and the amplification circuit can adopt any one of a common-source amplification structure, a common-gate amplification structure, a common-source common-gate amplification structure, or a distributed amplification circuit structure, which is not limited in the present application.

[0094] As an implementation, as shown in Figure 10a and Figure 10b , the amplification circuit can only include a first amplification transistor M1. Alternatively, the first amplification transistor M1 can be connected between the signal input end and the signal output end in a common-source manner as shown in Figure 10a or in a common-gate manner as shown in Figure 10b or other manners.

[0095] Exemplarily, when the first amplification transistor M1 is connected between the signal input end and the signal output end in a common-source manner, the first end of the first amplification transistor M1 is the input end of the amplification circuit and can be connected to the signal input end to receive the input radio frequency signal; the second end of the first amplification transistor M1 is the power supply end and the output end of the amplification circuit and can be connected to the signal output end to output the amplified radio frequency signal and connected to the power supply end of the low-noise amplifier 100 to receive the power supply voltage. The third end of the first amplification transistor M1 is used for grounding.

[0096] As an implementation, as shown in Figure 11a and Figure 11b , the amplification circuit includes at least one other amplification transistor, such as a second amplification transistor M2, in addition to the first amplification transistor M1. Alternatively, the first amplification transistor M1 and the other amplification transistor can be connected between the signal input end and the signal output end in a common-source common-gate manner as shown in Figure 11a , or in a distributed amplification circuit manner as shown in Figure 11b , or other manners, which is not limited in the present application.

[0097] Exemplarily, when the first amplification transistor M1 and the second amplification transistor M2 are connected in a common-source common-gate manner between the signal input end and the signal output end, the first end of the first amplification transistor M1 is the input end of the amplification circuit, and can be connected to the signal input end to receive the input radio frequency signal; the second end of the first amplification transistor M1 is connected to the third end of the second amplification transistor M2, and the third end of the first amplification transistor M1 is used for grounding; the first end of the second amplification transistor M2 can be used for receiving a bias signal, and the second end of the second amplification transistor M2 is the power supply end and the output end of the amplification circuit, and can be connected to the signal output end to output the amplified radio frequency signal, and connected to the power supply end of the low-noise amplifier 100 to receive a power supply voltage.

[0098] In the formula, the first amplification transistor M1 and the second amplification transistor M2 can be field effect tubes, and the first end of each transistor is a gate, the second end is a drain, and the third end is a source.

[0099] In at least one embodiment, as shown in Figure 10a to Figure 12 , the low-noise amplifier further includes a power supply end Vdd and a grounding end, and each amplification unit can further include at least one of a first inductor L1, a second inductor L2, an input matching circuit 170, an output matching circuit 180, and a power bleed circuit 190.

[0100] Exemplarily, as shown in Figure 10a or Figure 11a , the first inductor L1 is connected in series between the third end of the first amplification transistor M1 and the grounding end; the first inductor L1 can be used to increase the real part of the input impedance and improve the stability of the low-noise amplifier 100.

[0101] Exemplarily, as shown in Figure 10b or Figure 11a , the second inductor L2 is connected in series between the power supply end and the output end of the amplification circuit; the second inductor L2 can function as a choke coil to isolate signal interference between the direct-current power supply signal and the radio frequency signal, and improve the stability and reliability of the low-noise amplifier 100.

[0102] Exemplarily, as shown in Figure 12As shown, the input matching circuit 170 is connected to the signal input end, and can be used to match the input impedance of the signal input end and the output impedance of the front-stage circuit, so as to reduce the loss in the process of transmitting the radio frequency signal from the front-stage circuit to the signal input end. Optionally, the input matching circuit can include at least one third inductor L3 connected in series between the front-stage circuit and the signal input end. For example, when the low-noise amplifier has multiple signal input ends, one or more third inductors L3 are connected in series between each signal input end and the corresponding front-stage circuit, wherein the inductance values of the third inductors L3 connected to the respective signal input ends can be different according to the frequency bands of the input radio frequency signals.

[0103] The front-stage circuit can be any circuit element between the antenna and the low-noise amplifier, for example, can be a filter or a switch chip in the radio frequency front-end module. When the low-noise amplifier has multiple signal input ends, different signal input ends can be connected to the output ends of different filters or different ports of the switch chip.

[0104] Optionally, the third inductor L3 in the input matching circuit can be integrated in the chip together with the respective transistor, or can be arranged on the substrate and realized by the metal wiring of the substrate wiring layer or by an SMD device, which is not limited in the present application.

[0105] For example, as shown in FIG. 1, the output matching circuit 180 is connected between the output end of the amplification circuit and the signal output end. Figure 12 As shown, the output matching circuit 180 is connected between the output end of the amplification circuit and the signal output end; the output matching circuit 180 can be used to match the output impedance of the amplification circuit and the input impedance of the back-stage circuit, so as to reduce the loss in the process of transmitting the amplified radio frequency signal from the signal output end to the back-stage circuit. Optionally, the output matching circuit 180 can include at least one element such as a capacitor and / or an inductor, and the specific circuit structure thereof is not limited in the present application.

[0106] It should be noted that, in the case where no specific indication is given, the term "connection" in the present application can be direct connection or indirect connection. For example, the gate of the first amplification transistor M1 can be directly connected to the signal input end, or can be connected to the signal input end through a capacitor. For another example, the source of the first amplification transistor M1 can be directly grounded, or can be indirectly grounded through at least one element such as an inductor, a capacitor or a resistor. For another example, the drain of the second amplification transistor M2 can be directly connected to the power supply end Vdd, or can be connected to the power supply end Vdd through a choke coil; the drain of the second amplification transistor M2 can be directly connected to the signal output end, or can be indirectly connected to the signal output end through at least one element such as an inductor, a capacitor, a resistor or a switch.

[0107] Similar to the first shielding electrode 151, other shielding electrodes in the present application, such as the second shielding electrode 152, the third shielding electrode 153, the fourth shielding electrode 154, and the fifth shielding electrode 155, can be patterned metal films or metal traces, and can be grounded. The isolation principle is similar to that of the first shielding electrode 151, which will not be described here.

[0108] The present application also provides a low-noise amplifier 100 integrated in a chip, as shown in Figure 6 or Figure 13 The low-noise amplifier includes a second amplification unit 132, a third amplification unit 133, a first switch S1, a second switch S2, and a second signal output terminal 122. The first amplification unit 132 and the second amplification unit 133 are configured to amplify radio frequency signals of different frequency bands. The output terminal of the second amplification unit 132 is connected to the second signal output terminal 122 through the first switch S1, and the output terminal of the third amplification unit 133 is connected to the second signal output terminal through the second switch S2.

[0109] Specifically, the connection line between the first switch S1 and the second signal output terminal 122 includes a first metal trace 161, and the connection line between the second switch and the second signal output terminal includes a second metal trace 162.

[0110] As an implementation manner, the second metal trace 162 and the first metal trace 161 are not completely parallel. By setting the second metal trace 162 and the first metal trace 161 not to be completely parallel, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, so as to reduce the leakage of radio frequency signals between the first metal trace 161 and the second metal trace 162, thereby improving the performance of the low-noise amplifier 100.

[0111] For example, as shown in Figure 6 The second signal output terminal 122 is arranged in a fourth region Z4 of the chip. The part of the first metal trace 161 outside the fourth region can be arranged in a bent manner, so as to increase the average distance between the first metal trace 161 and the second metal trace 162, and further improve the signal isolation degree between the first metal trace 161 and the second metal trace 162.

[0112] As an implementation manner, the projection of the second metal trace 162 on a specific direction and the projection of the first metal trace 161 on the specific direction do not completely overlap. The specific direction is a direction parallel to any edge of the chip. For example, the projection of the second metal trace 162 on the second edge of the chip and the projection of the first metal trace 161 on the second edge of the chip do not completely overlap; or the projection of the second metal trace 162 on the third edge of the chip and the projection of the first metal trace 161 on the third edge of the chip do not completely overlap; or the projection of the second metal trace 162 on the second edge of the chip and the projection of the first metal trace 161 on the second edge of the chip do not completely overlap, and the projection of the second metal trace 162 on the third edge of the chip and the projection of the first metal trace 161 on the third edge of the chip do not completely overlap.

[0113] By staggering the first metal trace 161 and the second metal trace 162, the coupling between the first metal trace 161 and the second metal trace 162 can be weakened, and the leakage of the radio frequency signal between the first metal trace 161 and the second metal trace 162 can be reduced, thereby improving the performance of the low noise amplifier 100.

[0114] As an implementation form, the first signal output end 121 and the second signal output end 122 are located in the fourth region Z4, and the first region Z1, the second region Z2, and the third region Z3 are adjacent to the fourth region Z4. By arranging each signal output end in the same region, the connection of the low noise amplifier 100 and the subsequent circuit can be facilitated, and by arranging the fourth region Z4 to be adjacent to each region in which the amplification unit is arranged, the connection of each amplification unit and the corresponding signal output end can be facilitated, thereby making the wiring of the low noise amplifier 100 more concise and the layout more compact.

[0115] The embodiment of the present application also provides a radio frequency chip (not shown in the figure) comprising the low noise amplifier shown in any of the above embodiments.

[0116] Optionally, the chip of the embodiment of the present application can be a silicon substrate-based chip, or a Silicon-On-Insulator (SOI) substrate-based chip, or a gallium arsenide (GaAs) substrate-based chip or a silicon carbide (SiC) substrate-based chip. Specifically, each switch unit can comprise one or more transistors, and each transistor can be a field effect transistor, such as any one of a metal oxide semiconductor field effect transistor (MOSFET), a metal semiconductor field effect transistor (MESFET), a high electron mobility transistor (HEMT), and a pseudomorphic high electron mobility transistor (pHEMT).

[0117] According to the embodiment of the present application, by improving the layout of the low noise amplifier in the radio frequency chip, the isolation between different signal paths in the low noise amplifier is improved, the insertion loss and the noise figure of the low noise amplifier are reduced, and the performance of the low noise amplifier 100 is improved in multiple aspects.

[0118] The embodiment of the present application also provides a radio frequency front-end module, please refer toFigure 13 The radio frequency front-end module includes the low-noise amplifier 100 or the chip.

[0119] In some embodiments, the radio frequency front-end module can further include at least one of a radio frequency switch, a radio frequency power amplifier, a filter, a duplexer, etc., which can be integrated into one module, thereby improving the integration and performance and miniaturizing the volume.

[0120] The radio frequency front-end module can select to send or receive a radio frequency signal to or from the antenna port, to realize amplification, filtering, etc. of the radio frequency analog signal.

[0121] According to the embodiments of the present application, by improving the layout of the low-noise amplifier in the radio frequency front-end module, the isolation between different signal paths in the low-noise amplifier is improved, the insertion loss and the noise figure of the low-noise amplifier can be reduced, and the performance of the low-noise amplifier 100 is improved in many aspects.

[0122] The embodiments of the present application also provide an electronic device (not shown in the figure), which includes the low-noise amplifier 100 or the radio frequency front-end module 200 shown in any of the above embodiments.

[0123] The electronic device can be a mobile phone, a tablet computer, a vehicle-mounted terminal, etc. communication device, and of course, can also be other communication devices with communication function, and the embodiments of the present application do not limit the specific types of the electronic device.

[0124] The above embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not drive the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A low noise amplifier integrated in a chip, characterized in that, The low noise amplifier comprises a first signal input end, a second signal input end, a first amplification unit, a second amplification unit, a fourth signal output end, a fifth signal output end and a sixth signal output end, the first signal input end and the second signal input end are used for inputting radio frequency signals of different frequency bands, and the fourth signal output end, the fifth signal output end and the sixth signal output end are connected to the first amplification unit and the second amplification unit; The first signal input end is connected to the input end of the first amplification unit, and the first amplification unit is arranged in a first region adjacent to a first edge of the chip; The second signal input end is connected to the input end of the second amplification unit, and the second amplification unit is arranged in a second region adjacent to a second edge of the chip; The first region and the second region are provided with a first shielding electrode therebetween, and the fourth signal output end and the fifth signal output end are provided with a fourth shielding electrode therebetween; The fourth signal output end, the fifth signal output end and the sixth signal output end are arranged in a triangular shape; The sixth signal output end and the fourth signal output end are provided with a fifth shielding electrode therebetween, and the sixth signal output end and the fifth signal output end are provided with a sixth shielding electrode therebetween, the fourth shielding electrode, the fifth shielding electrode and the sixth shielding electrode are connected and the contact points are located in the triangle; or the chip is further provided with a seventh shielding electrode, the sixth signal output end is located on a first side of the seventh shielding electrode, the fourth signal output end and the fifth signal output end are located on a second side of the seventh shielding electrode, and the fourth shielding electrode is connected to the seventh shielding electrode and the contact point is located in the triangle.

2. The low noise amplifier of claim 1, wherein, The first shielding electrode at least partially surrounds the first region, and / or the first shielding electrode at least partially surrounds the second region.

3. The low noise amplifier of claim 1, wherein, The low noise amplifier further comprises a first signal output end and a second signal output end, an output end of the first amplification unit is connected to the first signal output end, and an output end of the second amplification unit is connected to the second signal output end; The first signal output end and the second signal output end are located on two sides of the first shielding electrode.

4. The low noise amplifier of claim 1, wherein, The low noise amplifier further comprises a third signal input end and a third amplification unit, the third signal input end is connected to an input end of the third amplification unit, and the third amplification unit is arranged in a third region adjacent to a third edge of the chip; The first shielding electrode extends between the third region and the first region, or a second shielding electrode is arranged between the third region and the first region; and / or The first shielding electrode extends between the second region and the third region, or a third shielding electrode is arranged between the third region and the second region.

5. The low noise amplifier of claim 4, wherein, The low noise amplifier further comprises a first signal output end, a second signal output end, a first switch and a second switch; The output end of the first amplification unit is connected to the first signal output end, the output end of the second amplification unit is connected to the second signal output end through the first switch, and the output end of the third amplification unit is connected to the second signal output end through the second switch. The first signal output end and the second signal output end are located on two sides of the first shielding electrode.

6. The low noise amplifier of claim 5, wherein, The first switch connects the second signal output end through a first metal trace, and the second switch connects the second signal output end through a second metal trace. The second metal trace is not completely parallel to the first metal trace, and / or the projection of the second metal trace on a specific direction is not completely overlapped with the projection of the first metal trace on the specific direction, the specific direction being a direction parallel to any edge of the chip.

7. A low noise amplifier according to any of claims 4-6, characterized in that, The first signal output end and the second signal output end are located in a fourth region, and the first region, the second region and the third region are adjacent to the fourth region, respectively.

8. The low noise amplifier of claim 1, wherein, The low-noise amplifier further comprises a third switch, a fourth switch, a fifth switch and a sixth switch. The output end of the first amplification unit is connected to the fourth signal output end through the third switch and to the fifth signal output end through the fourth switch. The output end of the second amplification unit is connected to the fourth signal output end through the fifth switch and to the fifth signal output end through the sixth switch.

9. The low noise amplifier of claim 8, wherein, The low-noise amplifier further comprises a seventh switch and an eighth switch. The output end of the first amplification unit is connected to the sixth signal output end through the seventh switch. The output end of the second amplification unit is connected to the sixth signal output end through the eighth switch.

10. The low noise amplifier of any of claims 8-9, wherein, The fourth signal output end and the fifth signal output end are arranged in a fifth region, and the first region and the second region are adjacent to the fifth region, respectively.

11. The low noise amplifier of claim 10, wherein, The fifth region is adjacent to a third edge of the chip, and the first edge and the second edge are two edges arranged opposite to each other on two sides of the third edge.

12. The low noise amplifier of any of claims 1-6 or 8-9, wherein, The low-noise amplifier further comprises a control circuit, and the control circuit is arranged in a sixth region, the sixth region is adjacent to a fourth edge of the chip, and the first region and the second region are located on the same side of the sixth region.

13. A radio frequency chip, characterized by The low-noise amplifier comprises the chip.

14. A radio frequency front end module, comprising: The chip comprises the low-noise amplifier or the chip according to claim 13.

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