Low-noise amplification circuit and radio frequency power amplifier module

Abstract

The invention provides a low-noise amplification circuit and a radio frequency power amplifier module, and the low-noise amplification circuit comprises an input matching circuit, a cascode amplification structure, an output matching circuit and a path switching assembly. The input matching circuit comprises a first inductor, a second inductor, a first capacitor and a third inductor; the output matching circuit comprises a fourth inductor, a second capacitor, a fifth inductor, a third capacitor and a fourth capacitor; and the access switching assembly is used for selecting channels of the low-noise amplification circuit, so that a radio frequency signal accessed by the first inductor is directly output or output after being amplified by the cascode amplification structure. According to the low-noise amplification circuit, on the premise that the noise coefficient is reduced and the gain is matched, the order of an input and output matching network does not need to be increased, and correspondingly, the cost and the area of the low-noise amplification circuit are not increased.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to a low-noise amplifier circuit and a radio frequency power amplifier module. Background Art

[0002] With the development of science and technology, ultra-wideband has been developed and applied in various daily life due to its low power consumption, low cost and accurate distance measurement. Smart electronic devices such as mobile phones and tablets have become indispensable tools. For example, the ultra-wideband transceiver installed on the mobile phone can easily locate small items such as headphones and keys, and can also be used as a wireless key to unlock and lock the car.

[0003] In order to achieve gain matching and lower noise within a wider bandwidth, the low noise amplifier in the prior art usually uses the method of increasing the order of the input and output matching networks and increasing the inductive coupling of the feedback and input and output loops, wherein the quality factor of the input matching network directly determines the size of the noise coefficient, and the output matching network determines the gain flatness.

[0004] Although increasing the order of the input and output matching networks can enable the low noise amplifier to achieve gain matching and lower noise within a wider bandwidth, increasing the order of the input and output matching networks also requires increasing the inductance, which in turn increases the cost of the low noise amplifier and makes the area too large.

[0005] In summary, although the low noise amplifier in the prior art can reduce its noise coefficient and achieve gain matching by increasing the order of the input and output matching networks, it will increase its cost and increase its area. Summary of the invention

[0006] In view of the above deficiencies in the prior art, the present invention proposes a low-noise amplifier circuit and a radio frequency power amplifier module to solve the problem that the low-noise amplifier in the prior art reduces its noise coefficient and matches the gain by increasing the order of the input and output matching networks, thereby increasing the cost of the low-noise amplifier and increasing its area.

[0007] In order to solve the above technical problems, the present invention adopts the following technical solutions: In a first aspect, the present invention provides a low-noise amplifier circuit, which includes an input matching circuit, a common-source and common-gate amplifier structure, an output matching circuit, and a path switching component; The input matching circuit includes a first inductor, a second inductor, a first capacitor and a third inductor; The first end of the first inductor is used to access the radio frequency signal, and the second end of the first inductor is grounded; The first end of the second inductor is connected to the first end of the first inductor; The first end of the first capacitor is connected to the second end of the second inductor, and the second end of the first capacitor is connected to the ground end of the common-source and common-gate amplification structure; A first end of the third inductor is connected to a ground end of the common-source and common-gate amplification structure, and a second end of the third inductor is grounded; The input end of the common-source and common-gate amplification structure is connected to the second end of the second inductor; The output matching circuit includes a fourth inductor, a second capacitor, a fifth inductor, a third capacitor and a fourth capacitor; The first end of the fourth inductor is connected to the output end of the common-source and common-gate amplification structure, and the second end of the fourth inductor is used to access the working voltage; The first end of the second capacitor is connected to the output end of the common-source and common-gate amplifier structure and serves as the second input end of the output matching circuit; The first end of the fifth inductor is connected to the second end of the second capacitor, and the second end of the fifth inductor is used to output a radio frequency signal; The first end of the third capacitor is used to access the working voltage, and the second end of the third capacitor is connected to the second end of the second capacitor; The first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the fifth inductor; The path switching component is used to select the path of the low-noise amplifier circuit so that the radio frequency signal connected to the first inductor is directly output or output after signal amplification through the common-source and common-gate amplifier structure.

[0008] Preferably, the low-noise amplifier circuit also includes a fifth capacitor; the first end of the fifth capacitor is connected to the second end of the second inductor, and the second end of the fifth capacitor is respectively connected to the first end of the first capacitor and the input end of the common-source and common-gate amplifier structure.

[0009] Preferably, the cascode amplification structure includes a first field effect transistor and a second field effect transistor; The gate of the first field effect transistor serves as the input terminal of the common-source common-gate amplification structure, and the source of the first field effect transistor serves as the ground terminal of the common-source common-gate amplification structure; The gate of the second field effect transistor is used to access the bias voltage, the source of the second field effect transistor is connected to the drain of the first field effect transistor, and the drain of the second field effect transistor serves as the output end of the common source and common gate amplifier structure.

[0010] Preferably, the path switching component comprises a third field effect transistor, a fourth field effect transistor, a fifth field effect transistor, a sixth field effect transistor and a seventh field effect transistor; the gate of the third field effect transistor, the gate of the fourth field effect transistor, the gate of the fifth field effect transistor, the gate of the sixth field effect transistor and the gate of the seventh field effect transistor are respectively used to access the control signal; One end of the drain and source of the third field effect transistor is connected to the first end of the first inductor, and the other end of the drain and source of the third field effect transistor is connected to the first end of the second inductor; One end of the drain and source of the fourth field effect transistor is connected to the first end of the fifth inductor, and the other end of the drain and source of the fourth field effect transistor is used to output the radio frequency signal output by the fifth inductor to the outside; One of the drain and the source of the fifth field effect transistor is connected to the first end of the first inductor; One end of the drain and source of the sixth field effect tube is connected to the other end of the drain and source of the fifth field effect tube, and the other end of the drain and source of the sixth field effect tube is grounded; One end of the drain and source of the seventh field effect tube is connected to the other end of the drain and source of the fifth field effect tube, and the other end of the drain and source of the seventh field effect tube is used to output a radio frequency signal.

[0011] Preferably, the path switching assembly includes a first single-pole single-throw switch, a second single-pole single-throw switch, a third single-pole single-throw switch, a fourth single-pole single-throw switch and a fifth single-pole single-throw switch; The control end of the first single-pole single-throw switch is connected to the first end of the first inductor, and the output end of the first single-pole single-throw switch is connected to the first end of the second inductor; The control end of the second single-pole single-throw switch is connected to the second end of the fifth inductor, and the output end of the second single-pole single-throw switch is used to output the radio frequency signal output by the fifth inductor to the outside; The control end of the third single-pole single-throw switch is connected to the first end of the first inductor; The control end of the fourth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fourth single-pole single-throw switch is grounded; The control end of the fifth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fifth single-pole single-throw switch is used to output a radio frequency signal.

[0012] In a second aspect, the present invention provides a radio frequency power amplifier module, which includes the low-noise amplifier circuit as described above.

[0013] Compared with the prior art, the low-noise amplifier circuit in the present invention can achieve electrostatic discharge protection through the first inductor by introducing a parallel first inductor, and reduce the parasitic capacitance of the input end of the input matching circuit to the ground, so as to improve the gain of the low-noise amplifier circuit and reduce its noise coefficient. At the same time, it can be used as a bypass path match to reduce the insertion of the bypass path, and can also provide greater flexibility for the balance of input gain matching and noise matching, and can better compromise the return loss and noise coefficient of the input end of the input matching circuit; in addition, by introducing the third capacitor, the fifth inductor and the fourth capacitor, it can provide greater freedom for the output matching circuit and realize a dual-frequency matching network, and by controlling the spacing, depth, width and balance of the dual-frequency points, better matching can be achieved within the target frequency band. It is equivalent to the low-noise amplifier circuit in the present invention, under the premise of reducing its noise coefficient and matching the gain, without increasing the order of the input and output matching network, and correspondingly, the cost and area of ​​the low-noise amplifier circuit will not be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings: Figure 1 This is an overall circuit structure diagram of a low-noise amplifier circuit provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0015] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of the present application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0016] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] Embodiment 1 The embodiment of the present invention provides a low noise amplifier circuit 100, combined with Figure 1 As shown, it includes an input matching circuit 1, a common source and common gate amplification structure 2, an output matching circuit 3 and a path switching component 4.

[0019] The input matching circuit 1 includes a first inductor L1, a second inductor L2, a first capacitor C1 and a third inductor L3; the first inductor L1 mainly functions as a balance between input matching and noise matching and increases the matching bandwidth, the first capacitor C1 serves as a compensation capacitor, and the third inductor L3 serves as a negative feedback inductor.

[0020] A first end of the first inductor L1 is used to access the radio frequency signal RFIN, and a second end of the first inductor L1 is grounded.

[0021] A first end of the second inductor L2 is connected to a first end of the first inductor L1 and serves as an input end of the input matching circuit 1 , and a second end of the second inductor L2 serves as an output end of the input matching circuit 1 .

[0022] A first end of the first capacitor C1 is connected to a second end of the second inductor L2 , and a second end of the first capacitor C1 is connected to a ground end of the common-source and common-gate amplification structure 2 .

[0023] A first end of the third inductor L3 is connected to a ground terminal of the common-source and common-gate amplification structure 2 , and a second end of the third inductor L3 is grounded.

[0024] The input end of the cascode amplifier structure 2 is connected to the second end of the second inductor L2.

[0025] The output matching circuit 3 includes a fourth inductor L4, a second capacitor C2, a fifth inductor L5, a third capacitor C3 and a fourth capacitor C4; the third capacitor C3, the fifth inductor L5 and the fourth capacitor C4 are introduced to achieve dual-frequency matching, the third capacitor C3 is used to control the dual-frequency point or the distance between two frequency points, the fifth inductor L5 is used to control the depth of the dual-frequency point, and the fourth capacitor C4 is used to control the balance between the depths of the dual-frequency points.

[0026] A first end of the fourth inductor L4 is connected to the output end of the common-source and common-gate amplifier structure 2 , and a second end of the fourth inductor L4 is used to access the working voltage VDD and serves as a first input end of the output matching circuit 3 .

[0027] A first end of the second capacitor C2 is connected to the output end of the common-source and common-gate amplifier structure 2 and serves as a second input end of the output matching circuit 3 .

[0028] A first end of the fifth inductor L5 is connected to the second end of the second capacitor C2 , and a second end of the fifth inductor L5 serves as an output end of the output matching circuit 3 and is used to output the radio frequency signal RFOUT.

[0029] A first end of the third capacitor C3 is used to access the working voltage VDD, and a second end of the third capacitor C3 is connected to the second end of the second capacitor C2.

[0030] A first end of the fourth capacitor C4 is connected to a first end of the third capacitor C3 , and a second end of the fourth capacitor C4 is connected to a second end of the fifth inductor L5 .

[0031] The path switching component 4 is used to select the pass channel of the low noise amplifier circuit 100 so that the radio frequency signal RFIN connected to the first inductor L1 is directly output or amplified by the common source and common gate amplifier structure 2 before being output.

[0032] In this embodiment, the low-noise amplifier circuit 100 also includes a fifth capacitor C5, which serves as a DC blocking capacitor; the first end of the fifth capacitor C5 is connected to the second end of the second inductor L2, and the second end of the fifth capacitor C5 is respectively connected to the first end of the first capacitor C1 and the input end of the common-source and common-gate amplifier structure 2.

[0033] In this embodiment, the cascode amplifier structure 2 includes a first field effect transistor M1 and a second field effect transistor M2; the first field effect transistor M1 and the second field effect transistor M2 form a cascode amplifier structure.

[0034] The gate of the first field effect transistor M1 serves as the input terminal of the cascode amplifier structure 2 , and the source of the first field effect transistor M1 serves as the ground terminal of the cascode amplifier structure 2 .

[0035] The gate of the second field effect transistor M2 is used to access the bias voltage, the source of the second field effect transistor M2 is connected to the drain of the first field effect transistor M1 , and the drain of the second field effect transistor M2 serves as the output end of the common-source common-gate amplifier structure 2 .

[0036] In this embodiment, the path switching component 4 includes a third field effect transistor S1, a fourth field effect transistor S2, a fifth field effect transistor S3, a sixth field effect transistor S4 and a seventh field effect transistor S5; the gate of the third field effect transistor S1, the gate of the fourth field effect transistor S2, the gate of the fifth field effect transistor S3, the gate of the sixth field effect transistor S4 and the gate of the seventh field effect transistor S5 are respectively used to access the control signal, which can be an enable signal or a voltage, etc.

[0037] One end of the drain and source of the third field effect transistor S1 is connected to the first end of the first inductor L1 , and the other end of the drain and source of the third field effect transistor S1 is connected to the first end of the second inductor L2 .

[0038] One end of the drain and source of the fourth field effect transistor S2 is connected to the first end of the fifth inductor L5, and the other end of the drain and source of the fourth field effect transistor S2 is used to output the radio frequency signal RFOUT output by the fifth inductor L5 to the outside.

[0039] One of the drain and the source of the fifth field effect transistor S3 is connected to the first end of the first inductor L1 .

[0040] One end of the drain and source of the sixth field effect transistor S4 is connected to the other end of the drain and source of the fifth field effect transistor S3 , and the other end of the drain and source of the sixth field effect transistor S4 is grounded.

[0041] One end of the drain and source of the seventh field effect transistor S5 is connected to the other end of the drain and source of the fifth field effect transistor S3 , and the other end of the drain and source of the seventh field effect transistor S5 is used to output the radio frequency signal RFOUT.

[0042] When the low-noise amplifier circuit 100 in this embodiment works in the amplification mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is amplified and then output after signal amplification through the common-source common-gate amplifier structure 2, the third field effect transistor S1, the fourth field effect transistor S2 and the sixth field effect transistor S4 are connected, and the fifth field effect transistor S3 and the seventh field effect transistor S5 are disconnected; when the low-noise amplifier circuit 100 works in the bypass mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is directly output, the third field effect transistor S1, the fourth field effect transistor S2 and the sixth field effect transistor S4 are disconnected, and the fifth field effect transistor S3 and the seventh field effect transistor S5 are connected.

[0043] The output matching circuit 3 is essentially a dual-band matching network. By controlling the two center frequencies 6.2G and 8.3G, better matching can be achieved within the required bandwidth rather than the entire passband. For example, in an ultra-wideband application scenario, the main frequency bands used are 6.2-6.8G and 7.7-8.3G, and the middle frequency band of 6.8-7.7G close to 1G does not need to be paid attention to.

[0044] Compared with the prior art, the low-noise amplifier circuit 100 in this embodiment introduces a parallel first inductor L1, which can achieve electrostatic discharge protection through the first inductor L1, and reduce the parasitic capacitance of the input end of the input matching circuit 1 to the ground, so as to improve the gain of the low-noise amplifier circuit 100 and reduce its noise coefficient. At the same time, it can be used as a match for the bypass path to reduce the insertion of the bypass path, and can also provide greater flexibility for the balance between input gain matching and noise matching, and can better compromise the return loss and noise coefficient of the input end of the input matching circuit 1. In order to minimize the noise coefficient of the low-noise amplifier circuit 100, the first inductor L1 and the second inductor L2 can be set to a higher quality factor; in addition, by introducing the third capacitor C3, the fifth inductor L5 and the fourth capacitor C4, a greater degree of freedom can be provided for the output matching circuit 3 and a dual-frequency matching network can be realized. By controlling the spacing, depth, width and balance of the dual-frequency points, better matching can be achieved within the target frequency band. This is equivalent to the low noise amplifier circuit 100 in the present invention reducing its noise coefficient and matching its gain without increasing the order of the input and output matching networks, and correspondingly will not increase the cost and area of ​​the low noise amplifier circuit 100.

[0045] Embodiment 2 Different from the first embodiment, the path switching component 4 in this embodiment includes a first single-pole single-throw switch, a second single-pole single-throw switch, a third single-pole single-throw switch, a fourth single-pole single-throw switch and a fifth single-pole single-throw switch.

[0046] The control end of the first single-pole single-throw switch is connected to the first end of the first inductor L1 , and the output end of the first single-pole single-throw switch is connected to the first end of the second inductor L2 .

[0047] The control end of the second single-pole single-throw switch is connected to the second end of the fifth inductor L5 , and the output end of the second single-pole single-throw switch is used to output the radio frequency signal RFOUT output by the fifth inductor L5 to the outside.

[0048] The control end of the third single-pole single-throw switch is connected to the first end of the first inductor L1 .

[0049] The control end of the fourth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fourth single-pole single-throw switch is grounded.

[0050] The control end of the fifth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fifth single-pole single-throw switch is used to output the radio frequency signal RFOUT.

[0051] Of course, the path switching component 4 in this embodiment can also be used in combination with the common-source and common-gate amplification structure 2 in the second embodiment.

[0052] When the low-noise amplifier circuit 100 in this embodiment works in the amplification mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is amplified and then output after signal amplification through the common-source and common-gate amplifier structure 2, the first single-pole single-throw switch, the second single-pole single-throw switch and the fourth single-pole single-throw switch are connected, and the third single-pole single-throw switch and the fifth single-pole single-throw switch are disconnected; when the low-noise amplifier circuit 100 works in the bypass mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is directly output, the first single-pole single-throw switch, the second single-pole single-throw switch and the fourth single-pole single-throw switch are disconnected, and the third single-pole single-throw switch and the fifth single-pole single-throw switch are connected.

[0053] Embodiment 3 This embodiment provides a radio frequency power amplifier module, which includes the low noise amplifier circuit 100 in embodiment 1. Of course, according to actual needs, the radio frequency power amplifier module can also use the low noise amplifier circuit 100 in embodiment 2.

[0054] Since the RF power amplifier module in this embodiment includes the low-noise amplifier circuit 100 in the first embodiment, it can also achieve the technical effect achieved by the low-noise amplifier circuit 100 in the first embodiment, which will not be described in detail here.

[0055] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims

1. A low noise amplifier circuit, characterized in that: The low noise amplifier circuit comprises an input matching circuit, a common source and common gate amplifier structure, an output matching circuit and a path switching component; The input matching circuit includes a first inductor, a second inductor, a first capacitor and a third inductor; The first end of the first inductor is used to access the radio frequency signal, and the second end of the first inductor is grounded; The first end of the second inductor is connected to the first end of the first inductor; The first end of the first capacitor is connected to the second end of the second inductor, and the second end of the first capacitor is connected to the ground end of the common-source and common-gate amplification structure; A first end of the third inductor is connected to a ground end of the common-source and common-gate amplification structure, and a second end of the third inductor is grounded; The input end of the common-source and common-gate amplification structure is connected to the second end of the second inductor; The output matching circuit includes a fourth inductor, a second capacitor, a fifth inductor, a third capacitor and a fourth capacitor; The first end of the fourth inductor is connected to the output end of the common-source and common-gate amplification structure, and the second end of the fourth inductor is used to access the working voltage; The first end of the second capacitor is connected to the output end of the common-source and common-gate amplifier structure and serves as the second input end of the output matching circuit; The first end of the fifth inductor is connected to the second end of the second capacitor, and the second end of the fifth inductor is used to output a radio frequency signal; The first end of the third capacitor is used to access the working voltage, and the second end of the third capacitor is connected to the second end of the second capacitor; The first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the fifth inductor; The path switching component is used to select the path of the low-noise amplifier circuit so that the radio frequency signal connected to the first inductor is directly output or output after signal amplification through the common-source and common-gate amplifier structure.

2. The low noise amplifier circuit according to claim 1, characterized in that: The low-noise amplifier circuit also includes a fifth capacitor; the first end of the fifth capacitor is connected to the second end of the second inductor, and the second end of the fifth capacitor is respectively connected to the first end of the first capacitor and the input end of the common-source and common-gate amplifier structure.

3. The low noise amplifier circuit according to claim 1, characterized in that: The common-source and common-gate amplification structure comprises a first field effect transistor and a second field effect transistor; The gate of the first field effect transistor serves as the input terminal of the common-source common-gate amplification structure, and the source of the first field effect transistor serves as the ground terminal of the common-source common-gate amplification structure; The gate of the second field effect transistor is used to access the bias voltage, the source of the second field effect transistor is connected to the drain of the first field effect transistor, and the drain of the second field effect transistor serves as the output end of the common source and common gate amplifier structure.

4. The low noise amplifier circuit according to claim 1, characterized in that: The path switching component includes a third field effect transistor, a fourth field effect transistor, a fifth field effect transistor, a sixth field effect transistor and a seventh field effect transistor; the gate of the third field effect transistor, the gate of the fourth field effect transistor, the gate of the fifth field effect transistor, the gate of the sixth field effect transistor and the gate of the seventh field effect transistor are respectively used to access control signals; One end of the drain and source of the third field effect transistor is connected to the first end of the first inductor, and the other end of the drain and source of the third field effect transistor is connected to the first end of the second inductor; One end of the drain and source of the fourth field effect transistor is connected to the first end of the fifth inductor, and the other end of the drain and source of the fourth field effect transistor is used to output the radio frequency signal output by the fifth inductor to the outside; One of the drain and the source of the fifth field effect transistor is connected to the first end of the first inductor; One end of the drain and source of the sixth field effect tube is connected to the other end of the drain and source of the fifth field effect tube, and the other end of the drain and source of the sixth field effect tube is grounded; One end of the drain and source of the seventh field effect tube is connected to the other end of the drain and source of the fifth field effect tube, and the other end of the drain and source of the seventh field effect tube is used to output a radio frequency signal.

5. The low noise amplifier circuit according to claim 1, characterized in that: The path switching assembly includes a first single-pole single-throw switch, a second single-pole single-throw switch, a third single-pole single-throw switch, a fourth single-pole single-throw switch and a fifth single-pole single-throw switch; The control end of the first single-pole single-throw switch is connected to the first end of the first inductor, and the output end of the first single-pole single-throw switch is connected to the first end of the second inductor; The control end of the second single-pole single-throw switch is connected to the second end of the fifth inductor, and the output end of the second single-pole single-throw switch is used to output the radio frequency signal output by the fifth inductor to the outside; The control end of the third single-pole single-throw switch is connected to the first end of the first inductor; The control end of the fourth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fourth single-pole single-throw switch is grounded; The control end of the fifth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fifth single-pole single-throw switch is used to output a radio frequency signal.

6. A radio frequency power amplifier module, characterized in that: The radio frequency power amplifier module includes the low-noise amplifier circuit as described in any one of claims 1 to 5.

Images