High-performance magnetic track memory and control method thereof

By introducing a voltage control layer and a spin flow layer into the magnetic layer, using DMI regulation to achieve chiral flip, and driving the consistent movement of the magnetic domain wall through a small amount of spin orbit moment current, the existing magnetic track memory has solved the problems of precise and efficient control of domain wall movement and low power consumption, and achieved a high-performance magnetic track memory.

CN119947119APending Publication Date: 2025-05-06HANGZHOU INTERNATIONAL INNOVATION INSTITUTE OF BEIHANG UNIVERSITY
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Patent Information

Application Number
CN202411947393.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-27
Publication Date
2025-05-06

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Abstract

The invention provides a high-performance magnetic track memory and a control method thereof. The high-performance magnetic track memory comprises a top electrode, a voltage regulation and control layer, a magnetic layer, a spin current layer and a bottom electrode which are sequentially arranged from top to bottom, wherein the magnetic layer is of a multi-domain structure which is magnetized upwards or downwards; the voltage regulation and control layer is used for carrying out chiral flipping on the magnetic layer through voltage regulation and control; the top electrode and the bottom electrode are connected with each other so as to provide bias voltage to the voltage regulation and control layer; the two ends of the bottom electrode are connected with each other so as to provide spin orbit moment current to the spin current layer, so that the spin current layer generates a spin current effect. Chiral flipping is realized by regulating and controlling the DMI, and shifting of the track memory is realized by taking a relatively small spin-orbit moment current as a driving mechanism. Compared with the traditional spin transfer torque current or spin orbit torque current, the spin transfer torque current or spin orbit torque current is four orders of magnitude smaller, and meanwhile, the chiral flipping is realized by voltage regulation and control, so that the track memory with ultra-low power consumption is realized.
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